TWI497211B - Photosensitive ray- or radiation-sensitive resin composition and pattern forming method using same - Google Patents

Photosensitive ray- or radiation-sensitive resin composition and pattern forming method using same Download PDF

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TWI497211B
TWI497211B TW099129196A TW99129196A TWI497211B TW I497211 B TWI497211 B TW I497211B TW 099129196 A TW099129196 A TW 099129196A TW 99129196 A TW99129196 A TW 99129196A TW I497211 B TWI497211 B TW I497211B
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atom
sensitive
ring
alkyl
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TW201126271A (en
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Kousuke Koshijima
Akinori Shibuya
Shuhei Yamaguchi
Shohei Kataoka
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Fujifilm Corp
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0046Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0047Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers

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  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Description

感光化射線性或感放射線性樹脂組成物及使用其之圖案形成方法Photosensitive ray- or radiation-sensitive resin composition and pattern forming method using same

本發明係關於感光化射線性或感放射線性樹脂組成物,以及使用其之圖案形成方法,尤其係關於使用於IC等之半導體製造工程、液晶、熱位差等之電路基板之製造、進一步為關於其他之用於感光蝕刻加工工程之感光化射線性或感放射線性組成物,以及使用其之圖案形成方法者。更詳細地說,本發明係關於適用於以250nm以下、較佳為220nm以下之遠紫外線及電子束等作為曝光光源之情況之感光化射線性或感放射線性樹脂組成物、以及使用其之圖案形成方法者。The present invention relates to a sensitizing ray-sensitive or radiation-sensitive resin composition, and a pattern forming method using the same, and more particularly to the manufacture of a circuit board used for semiconductor manufacturing engineering such as IC, liquid crystal, thermal dislocation, etc., and further Other photosensitive ray-sensitive or radiation-sensitive compositions for use in photo-sensitive etching processes, and pattern forming methods using the same. More specifically, the present invention relates to a sensitized ray- or radiation-sensitive resin composition suitable for use as an exposure light source having a far ultraviolet ray of 250 nm or less, preferably 220 nm or less, and a pattern using the same. The method of formation.

另外,本發明中所謂「光化射線」或「放射線」,意指例如汞燈之亮線光譜、準分子雷射代表之遠紫外線、極紫外線、X射線、電子束等。又,本發明中所謂光,意指光化射線或放射線。Further, the term "actinic ray" or "radiation" as used in the present invention means, for example, a bright line spectrum of a mercury lamp, a far ultraviolet ray represented by an excimer laser, an extreme ultraviolet ray, an X ray, an electron beam, or the like. Further, the term "light" as used in the present invention means actinic rays or radiation.

作為用於半導體之微影製程等之化學增幅型光阻組成物等之感光性組成物,尤其使用ArF準分子雷射(波長193nm)為光源之情形係由透明性與乾蝕刻耐性之觀點來看,使用具有脂環烴基之樹脂。As a photosensitive composition for a chemically amplified photoresist composition such as a lithography process for a semiconductor, in particular, an ArF excimer laser (wavelength: 193 nm) is used as a light source from the viewpoints of transparency and dry etching resistance. Look, a resin having an alicyclic hydrocarbon group is used.

於含有具有脂環烴基之樹脂之感光性組成物,要求更強的酸,使用三苯基鋶三氟甲烷磺酸酯等之類的產生全氟烷基磺酸之化合物。In the photosensitive composition containing a resin having an alicyclic hydrocarbon group, a stronger acid is required, and a perfluoroalkylsulfonic acid-producing compound such as triphenylsulfonium trifluoromethanesulfonate or the like is used.

但是,全氟烷基磺酸係疏水性高,使用產生此之酸產生劑之感光性組成物係有對於水系顯影液之親和力變低,並由於顯影性惡化,感度降低、或是產生顯影缺陷之問題。However, the perfluoroalkyl sulfonic acid has high hydrophobicity, and the photosensitive composition using the acid generator which generates the above has a low affinity for the aqueous developing solution, and the developability is deteriorated, the sensitivity is lowered, or development defects are generated. The problem.

對於此,專利文獻1記載著使用特定產生酸之化合物的感光性組成物,該特定產生酸之化合物含氟原子。In this regard, Patent Document 1 describes a photosensitive composition using a specific acid-generating compound, which specifically produces an acid-containing compound fluorine atom.

然而,隨著圖案之更微細化,需要更提升各種性能,尤其是曝光範圍及線寬粗糙度之性能。However, as the pattern is more refined, various properties, particularly the exposure range and line width roughness, need to be improved.

又,若施用液浸曝光於化學增幅光阻,因為於曝光時光阻層接觸到浸漬液,光阻層變質或從光阻層對浸漬液有不良影響以致成分滲出。在專利文獻2係指出了記載著藉由於曝光ArF曝光用之光阻之前後浸水而改變光阻性能之例,指出了液浸曝光中的問題。Further, if the liquid immersion exposure is applied to the chemically amplified photoresist, since the photoresist layer contacts the immersion liquid at the time of exposure, the photoresist layer is deteriorated or the immersion liquid is adversely affected from the photoresist layer so that the components bleed out. Patent Document 2 discloses an example in which the photoresist performance is changed by immersion in water before exposure to the photoresist for ArF exposure, and the problem in the immersion exposure is pointed out.

在專利文獻3係記載著於液浸曝光中使用具有特定之磺亞胺構造之酸產生劑之例。Patent Document 3 describes an example in which an acid generator having a specific sulfilimine structure is used for liquid immersion exposure.

另一方面,施用ArF準分子雷射於三苯基鋶鹽等之三芳基鋶鹽類之情況,雖為高感度、高量子產率,但其因為由苯環以致之強吸收,有進往光阻被膜之下部之透過光變少、圖案形狀變為梯形(錐形)狀之缺點。其故,做了許多關於在波長193nm中具有高透明性的高感度之光阻用光酸產生劑之嘗試。On the other hand, in the case where an ArF excimer laser is applied to a triarylsulfonium salt such as a triphenylsulfonium salt, although it is high in sensitivity and high in quantum yield, it is absorbed by the benzene ring. The transmitted light at the lower portion of the photoresist film is less, and the pattern shape is trapezoidal (tapered). For this reason, many attempts have been made to produce a high-sensitivity photo-acid generator for photoresist having a high transparency at a wavelength of 193 nm.

以其例而言,專利文獻4中提出了具有烷氧基萘骨架之鋶鹽化合物。又,於專利文獻5提出了將磺亞胺作為相對陰離子之具有烷氧基萘骨架之鋶陽離子鹽。但是,在此等化合物雖係於遠紫外線區域中之透明性高,但微影性能並不令人滿意。By way of example, Patent Document 4 proposes an onium salt compound having an alkoxynaphthalene skeleton. Further, Patent Document 5 proposes a phosphonium cation salt having an alkoxynaphthalene skeleton using a sulfilimine as a relative anion. However, although these compounds have high transparency in the far ultraviolet region, the lithographic properties are not satisfactory.

[先前技術文獻][Previous Technical Literature] [專利文獻][Patent Literature]

[專利文獻1]特開2004-2252號公報[Patent Document 1] JP-A-2004-2252

[專利文獻2]國際公開第04/068242號小冊[Patent Document 2] International Publication No. 04/068242

[專利文獻3]特開2006-84530號公報[Patent Document 3] JP-A-2006-84530

[專利文獻4]特開平10-232490號公報[Patent Document 4] Japanese Patent Publication No. Hei 10-232490

[專利文獻5]特開2004-12554號公報[Patent Document 5] JP-A-2004-12554

本發明之目的係提供可形成線寬粗糙度(Linewidthroughness;LWR)性能良好且抑制了塗布缺陷的圖案之感光化射線性或感放射線性樹脂組成物,及使用其之圖案形成方法。An object of the present invention is to provide a sensitized ray-sensitive or radiation-sensitive resin composition which can form a pattern having excellent line width roughness (LWR) performance and which suppresses coating defects, and a pattern forming method using the same.

本發明者等為了解決上述課題潛心研究之結果,達到完成了於下述表示之本發明。In order to solve the above problems, the inventors of the present invention have achieved the present invention which has been completed as described below.

(1)以含有下述(A)至(D)為特徵之感光化射線性或感放射線性樹脂組成物。(1) A photosensitive ray-sensitive or radiation-sensitive resin composition characterized by the following (A) to (D).

(A)藉由酸之作用增大對鹼顯影液之溶解度之樹脂、(A) a resin which increases the solubility to an alkali developer by the action of an acid,

(B)以下述通式(1-1)或(1-2)表示之化合物、(B) a compound represented by the following formula (1-1) or (1-2),

(C)具有氟原子及矽原子之至少之一者與藉由鹼顯影液之作用分解並增大對鹼顯影液之溶解性的極性變換基之樹脂、及(C) a resin having at least one of a fluorine atom and a ruthenium atom and a polar conversion group which decomposes by an action of an alkali developer and increases solubility in an alkali developer, and

(D)2種以上之溶劑所構成之混合溶劑,即含有由以下述通式(S1)至(S4)表示之群組中選出之至少1種溶劑,並該溶劑之合計含有率為全部溶劑中之1至20質量%之混合溶劑。(D) a mixed solvent of two or more kinds of solvents, that is, at least one solvent selected from the group consisting of the following general formulae (S1) to (S4), and the total content of the solvent is the total solvent. 1 to 20% by mass of a mixed solvent.

通式(1-1)中,R13 係表示氫原子、氟原子、羥基、烷基、環烷基、烷氧基、烷氧基羰基、或具有單環或是多環的環烷骨架之基。In the formula (1-1), R 13 represents a hydrogen atom, a fluorine atom, a hydroxyl group, an alkyl group, a cycloalkyl group, an alkoxy group, an alkoxycarbonyl group, or a cycloalkane skeleton having a monocyclic or polycyclic ring. base.

存在多個R14 的情況,其係各自獨立表示烷基、環烷基、烷氧基、烷氧基羰基、烷基羰基、烷基磺醯基、環烷基磺醯基、或具有單環或是多環的環烷骨架之基。Where a plurality of R 14 are present, each independently representing an alkyl group, a cycloalkyl group, an alkoxy group, an alkoxycarbonyl group, an alkylcarbonyl group, an alkylsulfonyl group, a cycloalkylsulfonyl group, or a single ring Or the base of a polycyclic naphthenic skeleton.

R15 係各自獨立表示烷基、環烷基或萘基。2個R15 亦可互相結合形成環。R 15 each independently represents an alkyl group, a cycloalkyl group or a naphthyl group. Two R 15 may also be combined with each other to form a ring.

l係表示0至2之整數。l is an integer from 0 to 2.

r係表示0至8之整數。r is an integer from 0 to 8.

X- 係表示非親核性陰離子。The X - line represents a non-nucleophilic anion.

通式(1-2)中,M係表示烷基、環烷基、芳基或苄基,具有環構造時,環構造係亦可含有氧原子、硫原子、酯鍵、醯胺鍵、或碳-碳雙鍵。In the formula (1-2), M represents an alkyl group, a cycloalkyl group, an aryl group or a benzyl group, and when having a ring structure, the ring structure may also contain an oxygen atom, a sulfur atom, an ester bond, a guanamine bond, or Carbon-carbon double bond.

R1c 及R2c 係各自獨立地表示氫原子、烷基、環烷基、鹵素原子、氰基或芳基。R 1c and R 2c each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, a cyano group or an aryl group.

Rx 及Ry 係各自獨立地表示烷基、環烷基、2-側氧烷基、烷氧基羰基烷基、烯丙基、或乙烯基。R x and R y each independently represent an alkyl group, a cycloalkyl group, a 2-sided oxyalkyl group, an alkoxycarbonylalkyl group, an allyl group, or a vinyl group.

Rx 及Ry 亦可結合形成環。R x and R y may also combine to form a ring.

M、R1c 及R2c 之至少二個亦可結合形成環、該環構造亦可含碳-碳雙鍵。At least two of M, R 1c and R 2c may also be combined to form a ring, and the ring structure may also contain a carbon-carbon double bond.

X- 係表示非親核性陰離子。The X - line represents a non-nucleophilic anion.

通式(S1)至(S3)中,R1 至R7 係各自獨立地表示亦可具有取代基之烷基、亦可具有取代基之環烷基,或亦可具有取代基之芳基。R1 與R2 、R3 與R4 、或R6 與R7 係亦可互相結合形成環。In the general formulae (S1) to (S3), R 1 to R 7 each independently represent an alkyl group which may have a substituent, a cycloalkyl group which may have a substituent, or an aryl group which may have a substituent. R 1 and R 2 , R 3 and R 4 , or R 6 and R 7 may be bonded to each other to form a ring.

通式(S4)中,R8 及R9 係各自獨立地表示亦可具有取代基之烷基,兩個基亦可互相結合形成環。In the formula (S4), R 8 and R 9 each independently represent an alkyl group which may have a substituent, and the two groups may be bonded to each other to form a ring.

(2)如(1)所記載之感光化射線性或感放射線性樹脂組成物,其中樹脂(A)含有含內酯構造之重複單元。(2) The photosensitive ray-sensitive or radiation-sensitive resin composition according to (1), wherein the resin (A) contains a repeating unit having a lactone structure.

(3)如(1)或(2)所記載之感光化射線性或感放射線性樹脂組成物,其中樹脂(A)含有含酸分解性基之重複單元,該酸分解性基具有單環或多環的脂環構造。(3) The photosensitive ray-sensitive or radiation-sensitive resin composition according to (1) or (2), wherein the resin (A) contains a repeating unit containing an acid-decomposable group, and the acid-decomposable group has a single ring or Polycyclic alicyclic structure.

(4)如(1)至(3)之任一項所記載之感光化射線性或感放射線性樹脂組成物,其係可應用於液浸曝光。(4) The sensitizing ray-sensitive or radiation-sensitive resin composition according to any one of (1) to (3), which is applicable to liquid immersion exposure.

(5)如(1)至(4)之任一項所記載之感光化射線性或感放射線性樹脂組成物,其中以組成物之總固體成分作為基準之化合物(B)的含有率為10至30質量%。(5) The photosensitive ray-sensitive or radiation-sensitive resin composition according to any one of (1) to (4), wherein the content of the compound (B) based on the total solid content of the composition is 10 Up to 30% by mass.

(6)一種圖案形成方法,其含有使用如(1)至(5)之任一項所記載之感光化射線性或感放射線性樹脂組成物形成膜之步驟、曝光該膜之步驟、及顯影之步驟。(6) A pattern forming method comprising the steps of forming a film using the sensitized ray-sensitive or radiation-sensitive resin composition according to any one of (1) to (5), the step of exposing the film, and developing The steps.

(7)如(6)所記載之圖案形成方法,其中曝光為液浸曝光。(7) The pattern forming method according to (6), wherein the exposure is liquid immersion exposure.

藉由本發明可提供可形成抑制塗布缺陷,且LWR性能優良之圖案之感光化射線性或感放射線性樹脂組成物、及使用其之圖案形成方法。另外,本發明之感光化射線性或感放射線性樹脂組成物係宜作為正型光阻組成物。According to the present invention, it is possible to provide a sensitized ray-sensitive or radiation-sensitive resin composition which can form a pattern which suppresses coating defects and has excellent LWR performance, and a pattern forming method using the same. Further, the sensitizing ray-sensitive or radiation-sensitive resin composition of the present invention is preferably used as a positive-type photoresist composition.

以下說明關於為了實施本發明之最佳形態。The following description is directed to the best mode for carrying out the invention.

另外,本說明書中之基(原子團)之記載中,未寫出取代及無取代之記載係亦包含不具有取代基者以及具有取代基者。例如所謂「烷基」不僅是不具有取代基之烷基(無取代烷基),亦是包含具有取代基之烷基(取代烷基)者。In addition, in the description of the group (atomic group) in the present specification, the description in which the substitution and the unsubstituted are not included also includes those having no substituent and having a substituent. For example, the "alkyl group" is not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group).

又,本說明書中所謂「曝光」只要沒有特別否定,係不僅是藉由以汞燈、準分子雷射代表之遠紫外線、X射線、EUV光等曝光,藉由電子束、離子束等之粒子線之描繪之曝光亦包含在內。In addition, the term "exposure" as used in the present specification is not limited by the exposure of far ultraviolet rays, X-rays, EUV light, etc. represented by a mercury lamp or a quasi-molecular laser, but also by particles such as an electron beam or an ion beam. The exposure of the line is also included.

[1]藉由光化射線或放射線之照射產生酸之化合物[1] Compounds which produce acid by irradiation with actinic rays or radiation

本發明之組成物係含有藉由光化射線或放射線之照射產生酸之化合物(以下亦稱為「酸產生劑」)。The composition of the present invention contains a compound which generates an acid by irradiation with actinic rays or radiation (hereinafter also referred to as "acid generator").

本發明之組成物係,作為酸產生劑,至少含有以下述通式(1-1)或(1-2)表示之化合物(以下稱為「化合物(B)」。)。化合物(B)之含有率係以本發明之組成物之總固體成分作為基準,較佳為10至30質量%,更佳為20至30質量%,再更佳為20至26質量%。The composition of the present invention contains at least a compound represented by the following formula (1-1) or (1-2) as an acid generator (hereinafter referred to as "compound (B)"). The content of the compound (B) is preferably from 10 to 30% by mass, more preferably from 20 to 30% by mass, still more preferably from 20 to 26% by mass, based on the total solid content of the composition of the present invention.

此等化合物即使以上述添加量範圍,所形成之膜可維持對於波長193nm之ArF光之高透過率,例如作為100nm之膜,對於波長193nm之光之透過率可為60%以上且85%以下。對於ArF光之透過率高,係為藉由ArF光之圖案化中擁有良好性能者。Even if these compounds are in the above-mentioned range of addition amount, the formed film can maintain high transmittance for ArF light having a wavelength of 193 nm, for example, as a film of 100 nm, the transmittance of light having a wavelength of 193 nm can be 60% or more and 85% or less. . The high transmittance of ArF light is due to the good performance in the patterning of ArF light.

對於波長193nm之光之透過率係可藉由例如將感光化射線性或感放射線性樹脂組成物藉由旋轉塗布塗布於石英玻璃基板上,在100℃進行預烘形成膜厚100nm之膜,並以橢圓偏光計EPM-222(J.A.Woollam公司製)等而求出其膜之波長193nm之吸光度而算出。The transmittance of light having a wavelength of 193 nm can be applied to a quartz glass substrate by spin coating, for example, by spin coating at 100 ° C to form a film having a thickness of 100 nm. The absorbance at a wavelength of 193 nm of the film was determined by an ellipsometer EPM-222 (manufactured by JA Woollam Co., Ltd.) or the like.

酸產生劑之總量中,較佳為含有80質量%至100質量%之由通式(1-1)或(1-2)所表示之化合物,更佳為含有90質量%至100質量%。The total amount of the acid generator is preferably from 80% by mass to 100% by mass based on the compound represented by the formula (1-1) or (1-2), more preferably from 90% by mass to 100% by mass. .

通式(1-1)中,R13 係表示氫原子、氟原子、羥基、烷基、環烷基、烷氧基、烷氧基羰基、或具有單環或是多環的環烷骨架之基。In the formula (1-1), R 13 represents a hydrogen atom, a fluorine atom, a hydroxyl group, an alkyl group, a cycloalkyl group, an alkoxy group, an alkoxycarbonyl group, or a cycloalkane skeleton having a monocyclic or polycyclic ring. base.

存在多個R14 之情況其係各自獨立表示烷基、環烷基、烷氧基、烷氧基羰基、烷基羰基、烷基磺醯基、環烷基磺醯基、或具有單環或是多環的環烷骨架之基。Where a plurality of R 14 are present, each independently represents an alkyl group, a cycloalkyl group, an alkoxy group, an alkoxycarbonyl group, an alkylcarbonyl group, an alkylsulfonyl group, a cycloalkylsulfonyl group, or has a single ring or It is the base of a polycyclic cycloalkane skeleton.

R15 係各自獨立表示烷基、環烷基或萘基。2個R15 亦可互相結合形成環。R 15 each independently represents an alkyl group, a cycloalkyl group or a naphthyl group. Two R 15 may also be combined with each other to form a ring.

l係表示0至2之整數。l is an integer from 0 to 2.

r係表示0至8之整數。r is an integer from 0 to 8.

X- 係表示非親核性陰離子。The X - line represents a non-nucleophilic anion.

通式(1-2)中,M係表示烷基、環烷基、芳基或苄基,具有環構造時,環構造係亦可含有氧原子、硫原子、酯鍵、醯胺鍵、或碳-碳雙鍵。In the formula (1-2), M represents an alkyl group, a cycloalkyl group, an aryl group or a benzyl group, and when having a ring structure, the ring structure may also contain an oxygen atom, a sulfur atom, an ester bond, a guanamine bond, or Carbon-carbon double bond.

R1c 及R2c 係各自獨立地表示氫原子、烷基、環烷基、鹵素原子、氰基或芳基。R 1c and R 2c each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, a cyano group or an aryl group.

Rx 及Ry 係各自獨立地表示烷基、環烷基、2-側氧烷基、烷氧基羰基烷基、烯丙基、或乙烯基。R x and R y each independently represent an alkyl group, a cycloalkyl group, a 2-sided oxyalkyl group, an alkoxycarbonylalkyl group, an allyl group, or a vinyl group.

Rx 及Ry 亦可結合形成環。又,M、R1c 及R2c 之至少兩個亦可結合形成環、於該環構造亦可含有碳-碳雙鍵。R x and R y may also combine to form a ring. Further, at least two of M, R 1c and R 2c may be bonded to form a ring, and the ring structure may also contain a carbon-carbon double bond.

X- 係表示非親核性陰離子。The X - line represents a non-nucleophilic anion.

首先,詳細地說明關於通式(1-1)。First, the general formula (1-1) will be described in detail.

通式(1-1)中,以R13 、R14 及R15 之烷基而言,較佳為直鏈狀或分枝狀且碳數1至10者,可舉出甲基、乙基、正丙基、異丙基、正丁基、2-甲基丙基、1-甲基丙基、三級丁基、正戊基、新戊基、正己基、正庚基、正辛基、2-乙基己基、正壬基、正癸基等。此等烷基之中以甲基、乙基、正丁基、三級丁基等為佳。In the formula (1-1), the alkyl group of R 13 , R 14 and R 15 is preferably a linear or branched form and has a carbon number of from 1 to 10, and examples thereof include a methyl group and an ethyl group. , n-propyl, isopropyl, n-butyl, 2-methylpropyl, 1-methylpropyl, tert-butyl, n-pentyl, neopentyl, n-hexyl, n-heptyl, n-octyl , 2-ethylhexyl, n-decyl, n-decyl, and the like. Among these alkyl groups, a methyl group, an ethyl group, a n-butyl group, a tertiary butyl group or the like is preferred.

以R13 、R14 及R15 之環烷基而言,可舉出較佳為環丙基、環丁基、環戊基、環己基、環庚基、環辛基、環癸基、環庚烯基、環己烯基、環辛二烯基、金剛烷基等,尤其是以環丙基、環戊基、環己基、環辛基為佳。The cycloalkyl group of R 13 , R 14 and R 15 is preferably a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, a cyclodecyl group or a ring. The heptenyl group, the cyclohexenyl group, the cyclooctadienyl group, the adamantyl group and the like are preferably a cyclopropyl group, a cyclopentyl group, a cyclohexyl group or a cyclooctyl group.

以R13 及R14 之烷氧基而言,較佳為直鏈狀、分枝狀或是環狀且碳數1至10者,可舉出例如甲氧基、乙氧基、正丙氧基、異丙氧基、正丁氧基、2-甲基丙氧基、1-甲基丙氧基、三級丁氧基、正戊氧基、新戊氧基、正己氧基、正庚氧基、正辛氧基、2-乙基己氧基、正壬氧基、正癸氧基、環庚氧基、環辛氧基等。此等烷氧基之中,以甲氧基、乙氧基、正丙氧基、正丁氧基等為佳。The alkoxy group of R 13 and R 14 is preferably a linear chain, a branched chain or a cyclic group and has a carbon number of 1 to 10, and examples thereof include a methoxy group, an ethoxy group, and a n-propoxy group. , isopropoxy, n-butoxy, 2-methylpropoxy, 1-methylpropoxy, tert-butoxy, n-pentyloxy, neopentyloxy, n-hexyloxy, n-glycol Oxyl, n-octyloxy, 2-ethylhexyloxy, n-decyloxy, n-decyloxy, cycloheptyloxy, cyclooctyloxy and the like. Among these alkoxy groups, a methoxy group, an ethoxy group, a n-propoxy group, a n-butoxy group or the like is preferred.

以R13 及R14 之烷氧基羰基而言,較佳為直鏈狀或分枝狀且碳數2至11者,可舉出例如甲氧基羰基、乙氧基羰基、正丙氧基羰基、異丙氧基羰基、正丁氧基羰基、2-甲基丙氧基羰基、1-甲基丙氧基羰基、三級丁氧基羰基、正戊氧基羰基、新戊基氧基羰基、正己基氧基羰基、正庚氧基羰基、正辛氧基羰基、2-乙基己氧基羰基、正壬氧基羰基、正癸氧基羰基等。此等烷氧基羰基之中,較佳為甲氧基羰基、乙氧基羰基、正丁氧基羰基等。The alkoxycarbonyl group of R 13 and R 14 is preferably a linear or branched form and has a carbon number of 2 to 11, and examples thereof include a methoxycarbonyl group, an ethoxycarbonyl group, and a n-propoxy group. Carbonyl, isopropoxycarbonyl, n-butoxycarbonyl, 2-methylpropoxycarbonyl, 1-methylpropoxycarbonyl, tert-butoxycarbonyl, n-pentyloxycarbonyl, neopentyloxy Carbonyl group, n-hexyloxycarbonyl group, n-heptyloxycarbonyl group, n-octyloxycarbonyl group, 2-ethylhexyloxycarbonyl group, n-decyloxycarbonyl group, n-decyloxycarbonyl group and the like. Among these alkoxycarbonyl groups, a methoxycarbonyl group, an ethoxycarbonyl group, a n-butoxycarbonyl group and the like are preferable.

以R13 及R14 之具有單環或是多環之環烷骨架之基而言,例如可舉出具有單環或是多環之環烷氧基、具有及單環或是多環之環烷基之烷氧基。此等基係亦可進一步具有取代基。Examples of the group having a monocyclic or polycyclic cycloalkane skeleton of R 13 and R 14 include a cycloalkyloxy group having a monocyclic or polycyclic ring, and a ring having a single ring or a polycyclic ring. Alkoxy group of alkyl. These base systems may further have a substituent.

以R13 及R14 之單環或多環之環烷氧基而言,以總碳數為7以上為佳,總碳數為7以上且15以下更佳,又以具有單環之環烷骨架為佳。所謂總碳數7以上之單環之環烷氧基,係表示於環丙氧基、環丁氧基、環戊氧基、環己氧基、環庚氧基、環辛氧基、環十二烷氧基等之環烷氧基任意地具有甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、十二烷基、2-乙基己基、異丙基、二級丁基、三級丁基、異戊基等之烷基、羥基、鹵素原子(氟、氯、溴、碘)、硝基、氰基、醯胺基、磺醯胺基、甲氧基、乙氧基、羥乙氧基、丙氧基、羥丙氧基、丁氧基等之烷氧基、甲氧基羰基、乙氧基羰基等之烷氧基羰基、甲醯基、乙醯基、苯甲醯基等之醯基、乙醯氧基、丁醯氧基等之醯氧基、羰基等之取代基的單環環烷氧基,並該環烷基上的總碳數與任意之取代基合計為7以上者。The monocyclic or polycyclic cycloalkoxy group of R 13 and R 14 preferably has a total carbon number of 7 or more, a total carbon number of 7 or more and 15 or less, and a monocyclic naphthenic ring. The skeleton is better. The monocyclic cycloalkoxy group having a total carbon number of 7 or more is represented by a cyclopropoxy group, a cyclobutoxy group, a cyclopentyloxy group, a cyclohexyloxy group, a cycloheptyloxy group, a cyclooctyloxy group, and a cyclodecene group. The cycloalkoxy group of a dialkoxy group or the like optionally has a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, a dodecyl group, a 2-ethylhexyl group, an isopropyl group. , an alkyl group such as a secondary butyl group, a tertiary butyl group or an isopentyl group, a hydroxyl group, a halogen atom (fluorine, chlorine, bromine, iodine), a nitro group, a cyano group, a decylamino group, a sulfonylamino group, a methoxy group Alkoxycarbonyl group of alkoxy group, ethoxy group, hydroxyethoxy group, propoxy group, hydroxypropoxy group, butoxy group, etc., alkoxycarbonyl group such as methoxycarbonyl group, ethoxycarbonyl group, methyl group, and ethyl group a monocyclic cycloalkoxy group having a substituent such as a mercapto group such as a mercapto group or a benzamidine group, a decyloxy group or a butyloxy group, or a carbonyl group, and the like, and a total carbon number on the cycloalkyl group The total number of the substituents is 7 or more.

又,以總碳數為7以上之多環之環烷氧基而言,可舉出降莰基氧基、三環癸氧基、四環癸氧基、金剛烷氧基等,此等係亦可具有上述取代基。Further, examples of the polycycloalkyloxy group having a total carbon number of 7 or more include a norbornyloxy group, a tricyclodecyloxy group, a tetracyclodecyloxy group, an adamantyloxy group, and the like. It may also have the above substituents.

以R13 及R14 之具有單環或多環之環烷骨架之烷氧基而言,較佳為總碳數為7以上,更佳為總碳數為7以上且15以下,又,以具有單環之環烷骨架之烷氧基為佳。所謂總碳數7以上的具有單環之環烷骨架之烷氧基,表示於甲氧基、乙氧基、丙氧基、丁氧基、戊氧基、己氧基、庚氧基、辛氧基、癸氧基、2-乙基己氧基、異丙氧基、二級丁氧基、三級丁氧基、異戊氧基等之烷氧基亦可具有上述之取代基之單環烷基經取代者,包含取代基之總碳數為7以上者表。例如可舉出環己基甲氧基、環戊基乙氧基、環己基乙氧基等,以環己基甲氧基為佳。The alkoxy group having a monocyclic or polycyclic cycloalkane skeleton of R 13 and R 14 preferably has a total carbon number of 7 or more, more preferably a total carbon number of 7 or more and 15 or less. An alkoxy group having a monocyclic naphthenic skeleton is preferred. The alkoxy group having a monocyclic naphthenic skeleton having a total carbon number of 7 or more is represented by a methoxy group, an ethoxy group, a propoxy group, a butoxy group, a pentyloxy group, a hexyloxy group, a heptyloxy group or a octyl group. The alkoxy group of an oxy group, a decyloxy group, a 2-ethylhexyloxy group, an isopropoxy group, a secondary butoxy group, a tertiary butoxy group, an isopentyloxy group or the like may have a single substituent as described above. The cycloalkyl group is substituted, and the total carbon number of the substituent is 7 or more. For example, a cyclohexylmethoxy group, a cyclopentylethoxy group, a cyclohexylethoxy group, etc. may be mentioned, and a cyclohexylmethoxy group is preferable.

又,以總碳數為7以上之具有多環之環烷骨架之烷氧基而言,較佳可舉出降莰基甲氧基、降莰基乙氧基、三環癸基甲氧基、三環癸基乙氧基、四環癸基甲氧基、四環癸基乙氧基、金剛烷基甲氧基、金剛烷基乙氧基等,其中以降莰基甲氧基、降莰基乙氧基為佳。此等係亦可具有上述取代基。Further, the alkoxy group having a polycyclic cycloalkane skeleton having a total carbon number of 7 or more is preferably a decyloxy group, a decyloxy group, a tricyclodecylmethoxy group. , tricyclodecyl ethoxy, tetracyclodecyl methoxy, tetracyclodecyl ethoxy, adamantyl methoxy, adamantyl ethoxy, etc., wherein thiol methoxy, hydrazine The ethoxy group is preferred. These lines may also have the above substituents.

以R14 之烷基羰基之烷基而言,可舉出與上述作為R13 至R15 之烷基同樣的具體例。The alkyl group of the alkylcarbonyl group of R 14 may be the same as the above-mentioned alkyl group as R 13 to R 15 .

以R14 之烷基磺醯基及環烷基磺醯基而言,以直鏈狀、分枝狀、環狀之碳數1至10者為佳,可舉出例如甲烷基磺醯基、乙烷基磺醯基、正丙烷基磺醯基、正丁烷基磺醯基、三級丁烷基磺醯基、正戊烷基磺醯基、新戊烷基磺醯基、正己烷基磺醯基、正庚烷基磺醯基、正辛烷基磺醯基、2-乙基己烷基磺醯基、正壬烷基磺醯基、正癸烷基磺醯基、環戊烷基磺醯基、環己烷基磺醯基等。此等之烷基磺醯基及環烷基磺醯基之中以甲烷基磺醯基、乙烷基磺醯基、正丙烷基磺醯基、正丁烷基磺醯基、環戊烷基磺醯基、環己烷基磺醯基等為佳。The alkylsulfonyl group and the cycloalkylsulfonyl group of R 14 are preferably a linear, branched or cyclic carbon number of 1 to 10, and examples thereof include a methylalkylsulfonyl group. Ethylsulfonyl, n-propanesulfonyl, n-butylsulfonyl, tert-butylbutanesulfonyl, n-pentylsulfonyl, neopentylsulfonyl, n-hexane Sulfonyl, n-heptylsulfonyl, n-octylsulfonyl, 2-ethylhexylsulfonyl, n-decylsulfonyl, n-decylsulfonyl, cyclopentane Alkylsulfonyl, cyclohexanesulfonyl, and the like. Among these alkylsulfonyl and cycloalkylsulfonyl groups are a methyl sulfonyl group, an ethane sulfonyl group, a n-propane sulfonyl group, a n-butyl sulfonyl group, a cyclopentyl group. A sulfonyl group, a cyclohexanesulfonyl group or the like is preferred.

上述各基係亦可具有取代基,以該取代基而言,可舉出鹵素原子(例如氟原子)、羥基、羧基、氰基、硝基、烷氧基、烷氧基烷基、烷氧基羰基、烷氧基羰基氧基等。Each of the above-mentioned groups may have a substituent, and examples of the substituent include a halogen atom (for example, a fluorine atom), a hydroxyl group, a carboxyl group, a cyano group, a nitro group, an alkoxy group, an alkoxyalkyl group, and an alkoxy group. Alkylcarbonyl, alkoxycarbonyloxy and the like.

以前述烷氧基而言,可舉出例如甲氧基、乙氧基、正丙氧基、異丙氧基、正丁氧基、2-甲基丙氧基、1-甲基丙氧基、三級丁氧基、環戊氧基、環己氧基等碳數1至20之直鏈狀、分枝狀或環狀的烷氧基等。The alkoxy group may, for example, be a methoxy group, an ethoxy group, a n-propoxy group, an isopropoxy group, a n-butoxy group, a 2-methylpropoxy group or a 1-methylpropoxy group. A linear, branched or cyclic alkoxy group having 1 to 20 carbon atoms such as a tertiary butoxy group, a cyclopentyloxy group or a cyclohexyloxy group.

以前述烷氧基烷基而言,可舉出例如甲氧甲基、乙氧甲基、1-甲氧乙基、2-甲氧乙基、1-乙氧乙基、2-乙氧乙基等碳數2至21之直鏈狀、分枝狀或環狀的烷氧基烷基等。The alkoxyalkyl group may, for example, be methoxymethyl, ethoxymethyl, 1-methoxyethyl, 2-methoxyethyl, 1-ethoxyethyl or 2-ethoxyB. A linear, branched or cyclic alkoxyalkyl group having a carbon number of 2 to 21 or the like.

以前述烷氧基羰基而言,可舉出例如甲氧基羰基、乙氧基羰基、正丙氧基羰基、異丙氧基羰基、正丁氧基羰基、2-甲基丙氧基羰基、1-甲基丙氧基羰基、三級丁氧基羰基、環戊氧基羰基、環己氧基羰基等碳數2至21之直鏈狀、分枝狀或環狀的烷氧基羰基等。The alkoxycarbonyl group may, for example, be a methoxycarbonyl group, an ethoxycarbonyl group, a n-propoxycarbonyl group, an isopropoxycarbonyl group, a n-butoxycarbonyl group or a 2-methylpropoxycarbonyl group. a linear, branched or cyclic alkoxycarbonyl group having 2 to 21 carbon atoms such as 1-methylpropoxycarbonyl, tertiary butoxycarbonyl, cyclopentyloxycarbonyl or cyclohexyloxycarbonyl .

以前述烷氧基羰基氧基而言,可舉出例如甲氧基羰基氧基、乙氧基羰基氧基、正丙氧基羰基氧基、異丙氧基羰基氧基、正丁氧基羰基氧基、三級丁氧基羰基氧基、環戊氧基羰基氧基、環己氧基羰基氧等碳數2至21之直鏈狀、分枝狀或環狀的烷氧基羰基氧基等。The alkoxycarbonyloxy group may, for example, be a methoxycarbonyloxy group, an ethoxycarbonyloxy group, a n-propoxycarbonyloxy group, an isopropoxycarbonyloxy group or a n-butoxycarbonyl group. a linear, branched or cyclic alkoxycarbonyloxy group having 2 to 21 carbon atoms such as an oxy group, a tertiary butoxycarbonyloxy group, a cyclopentyloxycarbonyloxy group or a cyclohexyloxycarbonyloxy group; Wait.

以2個R15 亦可互相結合形成之環構造而言,可舉出2個2價的R15 與通式(1-1)中之硫原子一起形成之5員或6員環、特佳為5員環(亦即四氫噻吩環),亦可與芳基或環烷基進行縮環。此2價之R15 係亦可具有取代基,以取代基而言,可舉出例如羥基、羧基、氰基、硝基、烷氧基、烷氧基烷基、烷氧基羰基、烷氧基羰基氧基等。A ring structure formed by combining two R 15 groups with each other may be a 5-member or 6-member ring formed by two divalent R 15 and a sulfur atom in the formula (1-1). It is a 5-membered ring (ie, a tetrahydrothiophene ring), and may also be condensed with an aryl group or a cycloalkyl group. The divalent R 15 group may have a substituent, and examples of the substituent include a hydroxyl group, a carboxyl group, a cyano group, a nitro group, an alkoxy group, an alkoxyalkyl group, an alkoxycarbonyl group, and an alkoxy group. Alkyloxy group and the like.

以R15 而言,以甲基、乙基、萘基、2個R15 互相結合與硫原子一起形成四氫噻吩環構造之2價之基等為佳。In the case of R 15 , a methyl group, an ethyl group, a naphthyl group, and two R 15 groups are bonded to each other to form a divalent group of a tetrahydrothiophene ring structure together with a sulfur atom.

以R13 及R14 具有之取代基而言,較佳為羥基、烷氧基、或烷氧基羰基、鹵素原子(尤其是氟原子)。The substituent of R 13 and R 14 is preferably a hydroxyl group, an alkoxy group, or an alkoxycarbonyl group, or a halogen atom (particularly a fluorine atom).

以1而言,較佳為0或1,更佳為1。In the case of 1, it is preferably 0 or 1, more preferably 1.

以r而言,較佳為0至2。In terms of r, it is preferably 0 to 2.

以本發明之由通式(1-1)表示之鹽而言,可舉出以下之具體例。The salt represented by the formula (1-1) of the present invention includes the following specific examples.

下述式中X- 係表示相對陰離子。In the following formula, the X - line represents a relative anion.

接著,針對通式(1-2)做說明。Next, the general formula (1-2) will be described.

式中,R1c 及R2c 係各自獨立地表示氫原子、烷基、環烷基、鹵素原子、氰基或芳基。In the formula, R 1c and R 2c each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, a cyano group or an aryl group.

Rx 及Ry 係各自獨立地表示烷基、環烷基、2-側氧烷基、烷氧基羰基烷基、烯丙基、或乙烯基。R x and R y each independently represent an alkyl group, a cycloalkyl group, a 2-sided oxyalkyl group, an alkoxycarbonylalkyl group, an allyl group, or a vinyl group.

M係表示烷基、環烷基、芳基或苄基,具有環構造時,環構造係亦可含有氧原子、硫原子、酯鍵、醯胺鍵或碳-碳雙鍵。M represents an alkyl group, a cycloalkyl group, an aryl group or a benzyl group. When having a ring structure, the ring structure may also contain an oxygen atom, a sulfur atom, an ester bond, a guanamine bond or a carbon-carbon double bond.

Rx 及Ry 亦可結合形成環。又,M、R1c 及R2c 之至少兩個亦可結合形成環、該環構造亦可含有碳-碳雙鍵。R x and R y may also combine to form a ring. Further, at least two of M, R 1c and R 2c may be bonded to form a ring, and the ring structure may also contain a carbon-carbon double bond.

作為M之烷基係直鏈、分枝之任一者皆可,例如碳數1至20之烷基、較佳為碳數1至12之直鏈及分枝烷基,可舉出例如甲基、乙基、正丙基、異丙基、正丁基、二級丁基、三級丁基、戊基、己基、辛基、2-乙基己基。Any one of the alkyl chain and the branch of M may be, for example, an alkyl group having 1 to 20 carbon atoms, preferably a linear or branched alkyl group having 1 to 12 carbon atoms, and may, for example, be a Base, ethyl, n-propyl, isopropyl, n-butyl, secondary butyl, tert-butyl, pentyl, hexyl, octyl, 2-ethylhexyl.

作為M之環烷基係碳數3至12之環狀烷基,可舉出例如環丙基、環丁基、環戊基、環己基、環庚基、環癸基等。Examples of the cyclic alkyl group having 3 to 12 carbon atoms of the cycloalkyl group of M include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, and a cyclodecyl group.

作為M之芳基係、較佳為碳數5至15,可舉出例如苯基、萘基。The aryl group of M, preferably a carbon number of 5 to 15, may, for example, be a phenyl group or a naphthyl group.

作為M之各基係,作為取代基,亦可具有環烷基、烷氧基、鹵素原子、苯硫基等。作為M之環烷基及芳基係亦可進一步作為取代基具有烷基。取代基之碳數係以15以下為佳。Each of the groups of M may have a cycloalkyl group, an alkoxy group, a halogen atom, a phenylthio group or the like as a substituent. The cycloalkyl group and the aryl group of M may further have an alkyl group as a substituent. The carbon number of the substituent is preferably 15 or less.

M為苯基時,作為取代基係以至少具有一個直鏈、分枝、環狀烷基,直鏈、分枝、環狀烷氧基或苯硫基為佳,再更佳為取代基之碳數和為2至15。由此,更提升溶劑溶解性並於保存時抑制粒子之產生。When M is a phenyl group, the substituent has at least one straight chain, branched chain, cyclic alkyl group, linear, branched, cyclic alkoxy group or phenylthio group, and more preferably a substituent. The carbon number is between 2 and 15. Thereby, the solubility of the solvent is further enhanced and the generation of particles is suppressed during storage.

作為R1c 及R2c 之烷基係,例如碳數1至12之烷基,較佳為碳數1至5之直鏈及分枝烷基可舉出例如甲基、乙基、直鏈或分枝丙基。The alkyl group of R 1c and R 2c , for example, an alkyl group having 1 to 12 carbon atoms, preferably a linear or branched alkyl group having 1 to 5 carbon atoms may, for example, be a methyl group, an ethyl group, a linear chain or Branched propyl.

作為R1c 及R2c 之環烷基係,例如碳數3至12之環烷基,較佳可舉出為環丙基、環丁基、環戊基、環己基、環庚基、環癸基等。The cycloalkyl group of R 1c and R 2c , for example, a cycloalkyl group having 3 to 12 carbon atoms is preferably a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group or a cyclic fluorene group. Base.

以鹵素原子而言,可舉出氟原子、氯原子、溴原子、碘原子。Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.

以作為R1c 及R2c 之芳基而言,較佳為碳數5至15,可舉出例如苯基、萘基。The aryl group as R 1c and R 2c is preferably a carbon number of 5 to 15, and examples thereof include a phenyl group and a naphthyl group.

以M、R1c 及R2c 之至少兩個鍵結形成環構造而言,較佳為3至12員環,更佳為3至10員環,再更佳為3至6員環。環骨架係亦可具有碳-碳雙鍵。In terms of at least two bond forming ring structures of M, R 1c and R 2c , it is preferably a 3 to 12 membered ring, more preferably a 3 to 10 membered ring, still more preferably a 3 to 6 membered ring. The ring skeleton system may also have a carbon-carbon double bond.

於R1c 與R2c 鍵結形成環的情況,以R1c 與R2c 鍵結形成之基而言,以碳數2至10之伸烷基為佳,可舉出例如伸乙基、伸丙基、伸丁基、伸戊基、伸己基等。又,R1c 與R2c 鍵結形成之環係亦可於環內具有氧原子等之雜原子。R 1c and R 2c in bonded form a ring, groups R 1c to R 2c and the bonding is formed, the carbon number of alkyl group of 2 to 10 extend preferably include stretch e.g. ethyl, propyl extension Base, butyl, pentyl, hexyl and the like. Further, the ring system formed by bonding R 1c and R 2c may have a hetero atom such as an oxygen atom in the ring.

作為Rx 及Ry 之烷基係可舉出與作為R1c 及R2c 之烷基同樣者。The alkyl group of R x and R y may be the same as the alkyl group as R 1c and R 2c .

以環烷基而言,例如以碳數3至8個之環烷基為佳,可舉出環戊基、環己基等。The cycloalkyl group is preferably a cycloalkyl group having 3 to 8 carbon atoms, and examples thereof include a cyclopentyl group and a cyclohexyl group.

2-側氧烷基係可舉出於作為R1c 及R2c 之烷基的2位具有>C=O之基。The 2-sided oxyalkyl group may be a group having >C=O at the 2-position of the alkyl group as R 1c and R 2c .

關於烷氧基羰基烷基中之烷氧基係亦可為直鏈、分枝、環狀之任一者,可舉出例如碳數1至10之烷氧基,較佳為碳數1至5之直鏈及分枝烷氧基(例如:甲氧基、乙氧基、直鏈或分枝丙氧基、直鏈或分枝丁氧基、直鏈或分枝戊氧基)、碳數3至8之環狀烷氧基(例如:環戊氧基、環己氧基)。又,關於烷氧基羰基烷基中之烷基係,例如碳數1至12之烷基,較佳可舉出碳數1至5之直鏈例如甲基、乙基。The alkoxy group in the alkoxycarbonylalkyl group may be any of a straight chain, a branched chain, and a cyclic group, and examples thereof include an alkoxy group having 1 to 10 carbon atoms, preferably a carbon number of 1 to 10. a straight chain and a branched alkoxy group (for example: methoxy, ethoxy, linear or branched propoxy, linear or branched butoxy, linear or branched pentyloxy), carbon A cyclic alkoxy group of 3 to 8 (for example, a cyclopentyloxy group or a cyclohexyloxy group). Further, the alkyl group in the alkoxycarbonylalkyl group, for example, an alkyl group having 1 to 12 carbon atoms, preferably a linear chain having 1 to 5 carbon atoms such as a methyl group or an ethyl group.

以烯丙基而言,係無特別制限制,但以無取代或經單環或多環之環烷基取代之烯丙基為佳。In the case of the allyl group, there is no particular restriction, but an allyl group which is unsubstituted or substituted with a monocyclic or polycyclic cycloalkyl group is preferred.

以乙烯基而言係無特別制限制,但以無取代或經單環或多環之環烷基取代之乙烯基為佳。There is no particular restriction on the vinyl group, but a vinyl group which is unsubstituted or substituted with a monocyclic or polycyclic cycloalkyl group is preferred.

以Rx 及Ry 亦可互相結合形成之環構造而言,係可舉出2價之Rx 及Ry (例如:亞甲基、伸乙基、伸丙基等)與通式(1-2)中之硫原子一起形成之5員或6員之環,特佳5員之環(亦即四氫噻吩環)。Examples of the ring structure in which R x and R y may be bonded to each other include divalent R x and R y (for example, methylene, exoethyl, propyl, etc.) and formula (1). -2) A ring of 5 or 6 members formed by a sulfur atom in the middle, and a ring of 5 members (ie, a tetrahydrothiophene ring).

Rx 、Ry 係較佳為碳數4以上之烷基,更佳為6以上、再更佳為8以上之烷基。R x and R y are preferably an alkyl group having 4 or more carbon atoms, more preferably 6 or more, still more preferably 8 or more alkyl groups.

以本發明之由通式(1-2)表示之化合物的陽離子而言,可舉出以下具體例。The cation of the compound represented by the formula (1-2) of the present invention includes the following specific examples.

作為通式(1-1)及(1-2)中以X- 表示之相對離子,可舉出以下述通式(II)表示之構造。The relative ion represented by X - in the general formulae (1-1) and (1-2) is a structure represented by the following general formula (II).

通式(II)中,A係表示氧原子、氮原子、碳原子。In the formula (II), A represents an oxygen atom, a nitrogen atom or a carbon atom.

R1 係表示具有氟原子之一價的有機基,較佳為表示(所含全部氟原子之質量)/(所含全部原子之質量)=0.35以下之一價之有機基。R 1 represents an organic group having a valence of one fluorine atom, and preferably an organic group having a value of (the mass of all fluorine atoms contained) / (mass of all atoms contained) = 0.13 or less.

R2 係表示亦可具有氟原子、取代基之烷基、亦可具有取代基之環烷基、或亦可具有取代基之芳基。R 2 represents an alkyl group which may have a fluorine atom or a substituent, a cycloalkyl group which may have a substituent, or an aryl group which may have a substituent.

A為氧原子時n=1、m=0,A為氮原子時n+m=2且n=1或2、m=0或1,A為碳原子時n+m=3且n=1至3之整數、m=0至2之整數。n為2以上時R1 係可相同亦可不同,R1 亦可各自鍵結形成環。When A is an oxygen atom, n=1, m=0, when A is a nitrogen atom, n+m=2 and n=1 or 2, m=0 or 1. When A is a carbon atom, n+m=3 and n=1. An integer of up to 3, an integer from m=0 to 2. When n is 2 or more, R 1 may be the same or different, and R 1 may be bonded to each other to form a ring.

進一步詳細地說明關於通式(II)。The general formula (II) will be described in further detail.

R1 係含氟原子之一價之有機基,較佳為以(所含全部氟原子之質量)/(所含全部原子之質量)表示之氟含有率為0.35以下之一價之有機基。R1 中,此氟含有率係以0.30以下為更佳,以0.25以下為特佳。R 1 is an organic group having one valence of a fluorine atom, and is preferably an organic group having a fluorine content of 0.35 or less expressed by (the mass of all fluorine atoms contained) / (mass of all atoms contained). In R 1 , the fluorine content is more preferably 0.30 or less, and particularly preferably 0.25 or less.

以由R1 表示之含氟原子之一價之有機基而言,可舉出含有以鍵結於磺醯基之至少一個氟原子取代之伸烷部之有機基,該伸烷部係較佳為全氟伸烷基。又,較佳為其末端係以具有環狀構造之基取代,亦可經由連結基取代。從低氟含有率之觀點來看,此具有環狀構造之基係較佳為不含氟原子。以R1 表示之一價之有機基係可舉出在一型態中對應以後述之通式(III)表示之R1 之構造。The organic group having one valence of a fluorine atom represented by R 1 may, for example, be an organic group containing an alkylene group substituted with at least one fluorine atom bonded to a sulfonyl group, and the alkylene group is preferably. It is a perfluoroalkylene group. Further, it is preferred that the terminal end is substituted with a group having a cyclic structure, and may be substituted with a linking group. From the viewpoint of a low fluorine content, the base having a cyclic structure preferably has no fluorine atom. In one R 1 represents a monovalent organic group of lines may be configured to include in a later corresponding to said patterns of formula (III) R 1 of the above.

所謂以R2 表示之烷基、環烷基、芳基,表示鏈式烷基、單環式烷基、多環式烴基、或單環式芳基,該鏈狀烷基、該單環式烷基、該多環式烴基、該單環式芳基係亦可具有取代基。以取代基而言較佳為具有氟原子。The alkyl group, cycloalkyl group, or aryl group represented by R 2 represents a chain alkyl group, a monocyclic alkyl group, a polycyclic hydrocarbon group, or a monocyclic aryl group, and the chain alkyl group, the monocyclic ring group The alkyl group, the polycyclic hydrocarbon group, and the monocyclic aryl group may have a substituent. The substituent preferably has a fluorine atom.

以鏈式烷基而言,可為直鏈狀亦可為分枝鏈狀,可舉出甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、十二烷基、2-乙基己基、異丙基、二級丁基、三級丁基、異戊基等。In the case of a chain alkyl group, it may be a linear chain or a branched chain, and examples thereof include a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, and a dodecane group. Base, 2-ethylhexyl, isopropyl, secondary butyl, tert-butyl, isopentyl, and the like.

該烷基係亦可具有取代基,以取代基而言,可舉出羥基、鹵素原子(氟、氯、溴、碘)、硝基、氰基、醯胺基、磺醯胺基、甲基、乙基、丙基、正丁基、二級丁基、己基、2-乙基己基、辛基等之烷基、甲氧基、乙氧基、羥乙氧基、丙氧基、羥丙氧基、丁氧基等之烷氧基、甲氧基羰基、乙氧基羰基等之烷氧基羰基、甲醯基、乙醯基、苯甲醯基等之醯基、乙醯氧基、丁醯氧基等之醯氧基、羰基。The alkyl group may have a substituent, and examples of the substituent include a hydroxyl group, a halogen atom (fluorine, chlorine, bromine, iodine), a nitro group, a cyano group, a decylamino group, a sulfonylamino group, and a methyl group. , ethyl, propyl, n-butyl, secondary butyl, hexyl, 2-ethylhexyl, octyl, etc. alkyl, methoxy, ethoxy, hydroxyethoxy, propoxy, hydroxypropyl An alkoxy group such as an oxy group or a butoxy group; an alkoxycarbonyl group such as a methoxycarbonyl group or an ethoxycarbonyl group; a mercapto group such as a mercapto group, an ethyl fluorenyl group or a benzamidine group; an ethoxy group; a decyloxy group or the like, a methoxy group or a carbonyl group.

以單環式烷基而言,較佳為可舉出環丙基、環丁基、環戊基、環己基、環庚基、環辛基、環十二烷基、環戊烯基、環己烯基、環辛基等,特佳為環丙基、環戊基、環己基、環辛基。The monocyclic alkyl group is preferably a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, a cyclododecyl group, a cyclopentenyl group, or a ring. A hexenyl group, a cyclooctyl group or the like is particularly preferably a cyclopropyl group, a cyclopentyl group, a cyclohexyl group or a cyclooctyl group.

該單環式烷基係亦可具有取代基,以取代基而言,可舉出鹵素原子(氟、氯、溴、碘)、硝基、氰基、醯胺基、磺醯胺基、甲基、乙基、丙基、正丁基、二級丁基、己基、2-乙基己基、辛基等之烷基、甲氧基、乙氧基、羥乙氧基、丙氧基、羥丙氧基、丁氧基等之烷氧基、甲氧基羰基、乙氧基羰基等之烷氧基羰基、甲醯基、乙醯基、苯甲醯基等之醯基、乙醯氧基、丁醯氧基等之醯氧基、羰基。The monocyclic alkyl group may have a substituent, and examples of the substituent include a halogen atom (fluorine, chlorine, bromine, iodine), a nitro group, a cyano group, a decylamino group, a sulfonylamino group, and a Base, ethyl, propyl, n-butyl, secondary butyl, hexyl, 2-ethylhexyl, octyl, etc. alkyl, methoxy, ethoxy, hydroxyethoxy, propoxy, hydroxy An alkoxycarbonyl group such as a propoxy group or a butoxy group, an alkoxycarbonyl group such as a methoxycarbonyl group or an ethoxycarbonyl group, a mercapto group such as a mercapto group, an ethyl fluorenyl group or a benzamidine group, or an ethoxy group. An oxy group or a carbonyl group such as a butyl oxy group.

以多環式烴基而言,可舉出雙環[4.3.0]壬基、十氫萘、三環[5.2.1.0(2,6)]癸基、莰基、異莰基、降莰基、金剛烷基、降金剛烷基(noradamantane)、1,7,7-三甲基三環[2.2.1.02,6 ]庚基、3,7,7-三甲基雙環[4.1.0]庚基等,特佳為降莰基、金剛烷基、降金剛烷基。Examples of the polycyclic hydrocarbon group include bicyclo [4.3.0] fluorenyl, decahydronaphthalene, tricyclo [5.2.1.0 (2,6)] fluorenyl, fluorenyl, isodecyl, norbornyl, Adamantyl, noradamantane, 1,7,7-trimethyltricyclo[2.2.1.0 2,6 ]heptyl, 3,7,7-trimethylbicyclo[4.1.0]g Base, etc., particularly preferably a thiol group, an adamantyl group, a norantayl group.

單環式芳基係意指取代或無取代之苯基,以取代基而言,可舉出羥基、鹵素原子(氟、氯、溴、碘)、硝基、氰基、醯胺基、磺醯胺基、甲基、乙基、丙基、正丁基、二級丁基、己基、2-乙基己基、辛基等之烷基、甲氧基、乙氧基、羥乙氧基、丙氧基、羥丙氧基、丁氧基等之烷氧基、甲氧基羰基、乙氧基羰基等之烷氧基羰基、甲醯基、乙醯基、苯甲醯基等之醯基、乙醯氧基、丁醯氧基等之醯氧基、羰基。The monocyclic aryl group means a substituted or unsubstituted phenyl group, and examples of the substituent include a hydroxyl group, a halogen atom (fluorine, chlorine, bromine, iodine), a nitro group, a cyano group, a decylamino group, and a sulfonate. Alkyl, methyl, ethyl, propyl, n-butyl, secondary butyl, hexyl, 2-ethylhexyl, octyl, etc. alkyl, methoxy, ethoxy, hydroxyethoxy, An alkoxy group such as a propoxy group, a hydroxypropoxy group or a butoxy group; an alkoxycarbonyl group such as a methoxycarbonyl group or an ethoxycarbonyl group; a mercapto group such as a methyl group, an ethyl group or a benzyl group; An oxy group or a carbonyl group such as an ethoxy group or a butoxy group.

R2 係從酸強度的觀點來看較佳為具有吸電子基。以吸電子基而言係無特別限定,但可舉出氰基、三氟甲基、硝基、羧基、酮基、醯氧基、羥基、全氟烷基、甲氧基、乙氧基、異丙氧基、三級丁氧基、苄氧基等之烷氧基、氟原子、氯原子等之鹵素原子等,尤以具有氟原子為佳。更佳為R2 係分子量220以下之具有氟原子之基,尤以R2 為三氟甲基為佳。The R 2 is preferably an electron withdrawing group from the viewpoint of acid strength. The electron withdrawing group is not particularly limited, and examples thereof include a cyano group, a trifluoromethyl group, a nitro group, a carboxyl group, a ketone group, a decyloxy group, a hydroxyl group, a perfluoroalkyl group, a methoxy group, and an ethoxy group. The alkoxy group such as an isopropoxy group, a tertiary butoxy group or a benzyloxy group, a halogen atom such as a fluorine atom or a chlorine atom, or the like is preferably a fluorine atom. More preferably, the R 2 is a group having a fluorine atom having a molecular weight of 220 or less, and particularly preferably R 2 is a trifluoromethyl group.

上述由通式(II)表示之相對陰離子係較佳為以下述通式(III)表示之構造。The relative anion represented by the above formula (II) is preferably a structure represented by the following formula (III).

通式(III)中,A、R2 、m、n係與通式(II)中之各者同義。In the formula (III), A, R 2 , m, and n are synonymous with each of the formula (II).

有多個R3 之情況,其係亦可各自獨立地表示亦可具有取代基之烷基、亦可具有取代基之環烷基、具有取代基之芳基,R4 係表示氫原子。In the case of a plurality of R 3 , each of them may independently represent an alkyl group which may have a substituent, a cycloalkyl group which may have a substituent, an aryl group having a substituent, and R 4 represents a hydrogen atom.

L係單鍵或連結基表示。The L system is represented by a single bond or a linking group.

p1係表示1至8之整數、p2表示=1或2、p3表示=0或1。P1 represents an integer from 1 to 8, p2 represents =1 or 2, and p3 represents =0 or 1.

p2=2之情況,兩個R3 係亦可互相結合形成環構造,n=2以上之情況、多個R3 係亦可互相結合形成環構造。In the case of p2=2, the two R 3 systems may be bonded to each other to form a ring structure, and when n=2 or more, a plurality of R 3 systems may be bonded to each other to form a ring structure.

以由R3 表示之烷基、環烷基及芳基具體例而言,可舉出與R2 之各者中例示之基同樣之基。Specific examples of the alkyl group, the cycloalkyl group and the aryl group represented by R 3 include the same groups as those exemplified for each of R 2 .

在此從R3 係低氟含率之觀點來看,較佳為沒有氟原子。Here, from the viewpoint of the low fluorine content of the R 3 system, it is preferred that no fluorine atom is present.

L係較佳為單鍵、氧原子(-O-)、硫原子(-S-)、氮原子(>N-)、羧基(-OC=O-,-CO=O-)、醯胺基(>NC=O-)、磺醯胺基(>NSO2 -)。尤其,於p2=2、兩個R3 互相結合形成環之情況、L係以為醯胺基、磺醯胺基等具有氮原子之連結基為佳,此時兩個R3 互相結合形成環內具有L上之氮原子之環狀胺殘基。L is preferably a single bond, an oxygen atom (-O-), a sulfur atom (-S-), a nitrogen atom (>N-), a carboxyl group (-OC=O-, -CO=O-), a guanamine group. (>NC=O-), sulfonamide (>NSO 2 -). In particular, in the case where p2 = 2, two R 3 are bonded to each other to form a ring, and L is preferably a linking group having a nitrogen atom such as a guanamine group or a sulfonylamino group, in which case two R 3 are bonded to each other to form a ring. a cyclic amine residue having a nitrogen atom on L.

以環狀胺殘基構造而言,可舉出吖(aziridine)、四氫吖唉(azetidine)、吡咯啶、哌啶、六亞甲基亞胺、七亞甲基亞胺、哌、十氫喹啉、十氫喹啉、8-吖雙環[3.2.1]辛烷、吲哚、唑、四氫噻唑、2-吖降莰烷、7-吖降莰烷、啉、噻啉等,此等係亦可具有取代基。以取代基而言,可舉出羥基、鹵素原子(氟、氯、溴、碘)、硝基、氰基、醯胺基、磺醯胺基、甲基、乙基、丙基、正丁基、二級丁基、己基、2-乙基己基、辛基等之烷基、甲氧基、乙氧基、羥乙氧基、丙氧基、羥丙氧基、丁氧基等之烷氧基、甲氧基羰基、乙氧基羰基等之烷氧基羰基、甲醯基、乙醯基、苯甲醯基、及形成環之碳上之羰基等之醯基、乙醯氧基、丁醯氧基等之醯氧基、羰基。In terms of the structure of the cyclic amine residue, 吖 (aziridine), azetidine, pyrrolidine, piperidine, hexamethyleneimine, heptamethyleneimine, piperazine , decahydroquinoline, decahydroquinoline, 8-indene bicyclo[3.2.1]octane, anthracene, Oxazole, tetrahydrothiazole, 2-indolyl decane, 7-fluorene decane, Porphyrin A phenyl or the like may also have a substituent. Examples of the substituent include a hydroxyl group, a halogen atom (fluorine, chlorine, bromine, iodine), a nitro group, a cyano group, a decylamino group, a sulfonylamino group, a methyl group, an ethyl group, a propyl group, and a n-butyl group. Alkyloxy of alkyl, methoxy, ethoxy, hydroxyethoxy, propoxy, hydroxypropoxy, butoxy, etc. of secondary butyl, hexyl, 2-ethylhexyl, octyl, etc. An alkoxycarbonyl group such as a methoxycarbonyl group or an ethoxycarbonyl group, a fluorenyl group, an ethyl fluorenyl group, a benzhydryl group, and a carbonyl group such as a carbonyl group on a ring-forming carbon, an ethoxy group, and a butyl group. A methoxy group or a carbonyl group such as a decyloxy group.

以本發明之由通式(II)表示之相對陰離子構造而言舉出以下具體例。The following specific examples are given to the relative anion structure represented by the general formula (II) of the present invention.

以產生酸之由通式(1-1)表示之化合物(B)而言,列舉以下表示之化合物,但不為限定於此者。The compound (B) represented by the formula (1-1) which produces an acid is exemplified by the following compounds, but is not limited thereto.

以產生酸之由通式(1-2)表示之化合物(B)而言,列舉以下表示之化合物,但不為限定於此者。The compound (B) represented by the formula (1-2) which produces an acid is exemplified by the following compounds, but is not limited thereto.

由通式(1-1)、(1-2)表示之酸產生劑(B)係亦可單獨使用,亦可將多個組合著使用。The acid generator (B) represented by the general formulae (1-1) and (1-2) may be used singly or in combination of two or more.

上述化合物(B)之光酸產生劑係較佳為與於下表示之其他光酸產生劑合計相對於本發明之組成物中之總固體成分量含有10至60質量%,更佳為含有20至50質量%,特佳為含有20至35質量%。The photoacid generator of the above compound (B) is preferably contained in an amount of 10 to 60% by mass, more preferably 20%, based on the total solid content of the composition of the present invention in combination with the other photoacid generators shown below. Up to 50% by mass, particularly preferably 20 to 35% by mass.

又,光酸產生劑之總量中,較佳為含有化合物(B)80質量%至100質量%,進一步較佳為含有90質量%至100質量%。Further, the total amount of the photoacid generator preferably contains 80% by mass to 100% by mass of the compound (B), and more preferably 90% by mass to 100% by mass.

[其他之光酸產生劑][Other photoacid generators]

本發明中係除了光酸產生劑(B)以外,亦可倂用藉由光化射線或放射線之照射而分解產生酸之化合物。以如此之可倂用之光酸產生劑而言,可適當選擇使用於光陽離子聚合之光起始劑、光自由基聚合之光起始劑、色素類之光脫色劑、光變色劑、或是微光阻等之藉由光化射線或放射線之照射產生酸之習知化合物及該等之混合物而使用。In the present invention, in addition to the photoacid generator (B), a compound which decomposes to generate an acid by irradiation with actinic rays or radiation may be used. In such a photoacid generator which can be suitably used, a photoinitiator for photocationic polymerization, a photoinitiator for photoradical polymerization, a photodegrading agent for a dye, a photochromic agent, or It is used as a conventional compound which generates an acid by irradiation of actinic rays or radiation, such as a micro-resistance, and the like.

可舉出例如:重氮鹽、鏻鹽、鋶鹽、錪鹽、醯亞胺磺酸鹽、肟磺酸鹽、二吖二碸、二碸、鄰硝基苄基磺酸鹽。Examples thereof include a diazonium salt, a phosphonium salt, a phosphonium salt, a phosphonium salt, a phosphonium imidesulfonate, an anthracenesulfonate, an anthraquinone, a diterpene, and an o-nitrobenzylsulfonate.

又,此等之藉由光化射線或放射線之照射產生酸之基、或是將化合物導入聚合物的主鏈或側鏈之化合物,例如可使用記載於美國專利第3,849,137號說明書、德國專利第3914407號說明書、特開昭63-26653號公報、特開昭55-164824號公報、特開昭62-69263號公報、特開昭63-146038號公報、特開昭63-163452號公報、特開昭62-153853號公報、特開昭63-146029號公報等之化合物。Further, such a compound which generates an acid group by irradiation with actinic rays or radiation, or a compound which introduces a compound into a main chain or a side chain of a polymer, for example, can be used as described in U.S. Patent No. 3,849,137, German Patent No. Japanese Patent Publication No. 3,914,407, Japanese Laid-Open Patent Publication No. JP-A-63-164824, JP-A-55-164824, JP-A-62-69263, JP-A-63-146038, JP-A-63-163452 A compound such as JP-A-62-153853 and JP-A-63-146029.

進一步亦可使用記載於美國專利第3,779,778號說明書、歐洲專利第126,712號說明書等之藉由光產生酸之化合物。Further, a compound which generates an acid by light, which is described in the specification of U.S. Patent No. 3,779,778, and the specification of European Patent No. 126,712, can also be used.

作為在酸產生劑內之較佳化合物,可舉出由下述通式(ZI)、(ZII)、(ZIII)表示之化合物。Preferred compounds in the acid generator include compounds represented by the following formulae (ZI), (ZII), and (ZIII).

上述通式(ZI)中,R201 、R202 及R203 係各自獨立地表示有機基。In the above formula (ZI), R 201 , R 202 and R 203 each independently represent an organic group.

作為R201 、R202 及R203 之有機基之碳數係一般為1至30、較佳為1至20。The carbon number of the organic group as R 201 , R 202 and R 203 is usually from 1 to 30, preferably from 1 to 20.

又,R201 至R203 之中的兩個亦可結合形成環構造,於環內亦可含有氧原子、硫原子、酯鍵、醯胺鍵、羰基。以R201 至R203 內之兩個鍵結形成之基而言,可舉出伸烷基(例如:伸丁基、伸戊基)。Further, two of R 201 to R 203 may be bonded to each other to form a ring structure, and may further contain an oxygen atom, a sulfur atom, an ester bond, a guanamine bond or a carbonyl group in the ring. The group formed by the two bonds in R 201 to R 203 may, for example, be an alkyl group (for example, a butyl group or a pentyl group).

Z- 係表示非親核性陰離子。The Z - line represents a non-nucleophilic anion.

以作為Z- 之非親核性陰離子而言,可舉出例如磺酸陰離子、羧酸陰離子、磺醯基醯亞胺陰離子、雙(烷基磺醯基)醯亞胺陰離子、參(烷基磺醯基)甲基陰離子等。As Z - of the non-nucleophilic anion, examples thereof include sulfonic acid anion, for example, a carboxylic acid anion, sulfonic acyl acyl imide anion, bis (alkylsulfonyl yl) imide anion XI, ginseng (alkyl Sulfhydryl) methyl anion and the like.

所謂非親核性陰離子,為產生親核反應之能力明顯為低之陰離子,為可抑制藉由分子內親核反應之歷時分解之陰離子。藉此提升感光化射線性或感放射線性樹脂組成物之歷時安定性。The non-nucleophilic anion is an anion having a significantly low ability to generate a nucleophilic reaction, and is an anion capable of suppressing the decomposition of the nucleophilic reaction in the molecule. Thereby, the diachronic stability of the sensitizing ray-sensitive or radiation-sensitive resin composition is improved.

以磺酸陰離子而言,例如可舉出脂肪族磺酸陰離子、芳香族磺酸陰離子、樟腦磺酸陰離子等。Examples of the sulfonic acid anion include an aliphatic sulfonate anion, an aromatic sulfonate anion, and a camphorsulfonate anion.

以羧酸陰離子而言,例如可舉出脂肪族羧酸陰離子、芳香族羧酸陰離子、芳烷基羧酸陰離子等。Examples of the carboxylic acid anion include an aliphatic carboxylic acid anion, an aromatic carboxylic acid anion, and an aralkyl carboxylate anion.

脂肪族磺酸陰離子中之脂肪族部位係可為烷基亦可為環烷基,較佳為碳數1至30之烷基及碳數3至30之環烷基,可舉出例如甲基、乙基、丙基、異丙基、正丁基、異丁基、二級丁基、戊基、新戊基、己基、庚基、辛基、壬基、癸基、十一烷基、十二烷基、十三烷基、十四烷基、十五烷基、十六烷基、十七烷基、十八烷基、十九烷基、二十烷基、環丙基、環戊基、環己基、金剛烷基、降莰基、莰基等。The aliphatic moiety in the aliphatic sulfonic acid anion may be an alkyl group or a cycloalkyl group, preferably an alkyl group having 1 to 30 carbon atoms and a cycloalkyl group having 3 to 30 carbon atoms, and examples thereof include a methyl group. , ethyl, propyl, isopropyl, n-butyl, isobutyl, secondary butyl, pentyl, neopentyl, hexyl, heptyl, octyl, decyl, decyl, undecyl, Dodecyl, tridecyl, tetradecyl, pentadecyl, hexadecyl, heptadecyl, octadecyl, nonadecyl, eicosyl, cyclopropyl, cyclo Pentyl, cyclohexyl, adamantyl, norbornyl, fluorenyl and the like.

以芳香族磺酸陰離子中之芳香族基而言,較佳為碳數6至14之芳基,可舉出例如苯基、甲苯基、萘基等。The aromatic group in the aromatic sulfonic acid anion is preferably an aryl group having 6 to 14 carbon atoms, and examples thereof include a phenyl group, a tolyl group, and a naphthyl group.

脂肪族磺酸陰離子及芳香族磺酸陰離子中之烷基、環烷基及芳基係亦可具有取代基。以脂肪族磺酸陰離子及芳香族磺酸陰離子中之烷基、環烷基及芳基之取代基而言,可舉出例如硝基、鹵素原子(氟原子、氯原子、溴原子、碘原子)、羧基、羥基、胺基、氰基、烷氧基(較佳為碳數1至15)、環烷基(較佳為碳數3至15)、芳基(較佳為碳數6至14)、烷氧基羰基(較佳為碳數2至7)、醯基(較佳為碳數2至12)、烷氧基羰基氧基(較佳為碳數2至7)、烷硫基(較佳為碳數1至15)、烷基磺醯基(較佳為碳數1至15)、烷基亞胺基磺醯基(較佳為碳數2至15)、芳氧基磺醯基(較佳為碳數6至20)、烷基芳基氧基磺醯基(較佳為碳數7至20)、環烷基芳基氧基磺醯基(較佳為碳數10至20)、烷氧基烷基氧基(較佳為碳數5至20)、環烷基烷基氧基烷氧基(較佳為碳數8至20)等。關於各基所具有之芳基及環構造係,取代基係進一步可舉出烷基(較佳為碳數1至15)。The alkyl group, the cycloalkyl group, and the aryl group in the aliphatic sulfonic acid anion and the aromatic sulfonic acid anion may have a substituent. Examples of the substituent of the alkyl group, the cycloalkyl group and the aryl group in the aliphatic sulfonic acid anion and the aromatic sulfonic acid anion include a nitro group and a halogen atom (a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom). ), a carboxyl group, a hydroxyl group, an amine group, a cyano group, an alkoxy group (preferably having a carbon number of 1 to 15), a cycloalkyl group (preferably having a carbon number of 3 to 15), and an aryl group (preferably having a carbon number of 6 to 14) an alkoxycarbonyl group (preferably having 2 to 7 carbon atoms), a mercapto group (preferably having 2 to 12 carbon atoms), an alkoxycarbonyloxy group (preferably having 2 to 7 carbon atoms), and an alkane sulfur a base (preferably having a carbon number of 1 to 15), an alkylsulfonyl group (preferably having a carbon number of 1 to 15), an alkylimidosulfonyl group (preferably having a carbon number of 2 to 15), and an aryloxy group. a sulfonyl group (preferably having a carbon number of 6 to 20), an alkylaryloxysulfonyl group (preferably having a carbon number of 7 to 20), a cycloalkylaryloxysulfonyl group (preferably a carbon number) 10 to 20), an alkoxyalkyloxy group (preferably, a carbon number of 5 to 20), a cycloalkylalkyloxyalkoxy group (preferably having a carbon number of 8 to 20), and the like. The aryl group and the ring structure of each group may further be an alkyl group (preferably having a carbon number of 1 to 15).

以脂肪族羧酸陰離子中之脂肪族部位而言,可舉出與脂肪族磺酸陰離子中同樣的烷基及環烷基。The aliphatic moiety in the aliphatic carboxylic acid anion may, for example, be the same alkyl group and cycloalkyl group as the aliphatic sulfonate anion.

以芳香族羧酸陰離子中之芳香族基而言,可舉出與芳香族磺酸陰離子中之同樣的芳基。The aromatic group in the aromatic carboxylic acid anion may, for example, be the same aryl group as the aromatic sulfonic acid anion.

以芳烷基羧酸陰離子中之芳烷基而言,較佳為碳數6至12之芳烷基,可舉出例如苄基、苯乙基、萘基甲基、萘基乙基、萘基丁基等。The aralkyl group in the aralkyl carboxylate anion is preferably an aralkyl group having 6 to 12 carbon atoms, and examples thereof include a benzyl group, a phenethyl group, a naphthylmethyl group, a naphthylethyl group, and a naphthalene group. Butyl and the like.

脂肪族羧酸陰離子、芳香族羧酸陰離子及芳烷基羧酸陰離子中之烷基、環烷基、芳基及芳烷基係亦可具有取代基。以脂肪族羧酸陰離子、芳香族羧酸陰離子及芳烷基羧酸陰離子中之烷基、環烷基、芳基及芳烷基之取代基而言,可舉出例如與芳香族磺酸陰離子中同樣的鹵素原子、烷基、環烷基、烷氧基、烷硫基等。The alkyl group, the cycloalkyl group, the aryl group, and the aralkyl group in the aliphatic carboxylic acid anion, the aromatic carboxylic acid anion, and the aralkyl carboxylate anion may have a substituent. Examples of the substituent of the alkyl group, the cycloalkyl group, the aryl group and the aralkyl group in the aliphatic carboxylic acid anion, the aromatic carboxylic acid anion, and the aralkyl carboxylate anion include, for example, an aromatic sulfonate anion. The same halogen atom, alkyl group, cycloalkyl group, alkoxy group, alkylthio group or the like.

以磺醯基醯亞胺陰離子而言,可舉出例如糖精陰離子。The sulfonyl quinone imine anion may, for example, be a saccharin anion.

雙(烷基磺醯基)醯亞胺陰離子、參(烷基磺醯基)甲基陰離子中之烷基係以碳數1至5之烷基為佳,可舉出例如甲基、乙基、丙基、異丙基、正丁基、異丁基、二級丁基、戊基、新戊基等。以此等之烷基之取代基而言可舉出鹵素原子、經鹵素原子取代之烷基、烷氧基、烷硫基、烷基氧基磺醯基、芳基氧基磺醯基、環烷基芳基氧基磺醯基等、較佳為經氟原子取代之烷基。The alkyl group in the bis(alkylsulfonyl) quinone imine anion or the exemplified (alkylsulfonyl) methyl anion is preferably an alkyl group having 1 to 5 carbon atoms, and examples thereof include a methyl group and an ethyl group. , propyl, isopropyl, n-butyl, isobutyl, secondary butyl, pentyl, neopentyl, and the like. Examples of the substituent of the alkyl group include a halogen atom, an alkyl group substituted with a halogen atom, an alkoxy group, an alkylthio group, an alkyloxysulfonyl group, an aryloxysulfonyl group, and a ring. The alkylaryloxysulfonyl group or the like is preferably an alkyl group substituted with a fluorine atom.

以其他之非親核性陰離子而言,可舉出例如氟化磷、氟化硼、氟化銻等。Examples of the other non-nucleophilic anion include phosphorus fluoride, boron fluoride, and cesium fluoride.

以Z- 之非親核性陰離子而言,較佳為磺酸之α位經氟原子取代之脂肪族磺酸陰離子、經氟原子或具有氟原子之基取代之芳香族磺酸陰離子、烷基經氟原子取代之雙(烷基磺醯基)醯亞胺基陰離子、烷基經氟原子取代之參(烷基磺醯基)甲基化陰離子。作為非親核性陰離子,更佳為碳數4至8之全氟脂肪族磺酸陰離子、具有氟原子之苯磺酸陰離子,進一步更佳為九氟丁烷磺酸陰離子、全氟辛烷磺酸陰離子、五氟苯磺酸陰離子、3,5-雙(三氟甲基)苯磺酸陰離子。To Z - substituent of the non-nucleophilic anion, preferable are sulfonic α position by a fluorine atom aliphatic sulfonic acid anion, a fluorine atom or an aromatic sulfonic acid anion substituted with a fluorine atom of the group, an alkyl group A bis(alkylsulfonyl) fluorenylene anion substituted with a fluorine atom, and an alkyl (alkylsulfonyl) methylated anion substituted with a fluorine atom. The non-nucleophilic anion is more preferably a perfluoroaliphatic sulfonate anion having 4 to 8 carbon atoms, an benzenesulfonic acid anion having a fluorine atom, still more preferably a nonafluorobutanesulfonate anion or perfluorooctanesulfonate. Acid anion, pentafluorobenzenesulfonate anion, 3,5-bis(trifluoromethyl)benzenesulfonate anion.

又以Z- 之非親核性陰離子而言亦可為由下述通式(Xa)或通式(Xb)表示之構造。Further, the Z - non-nucleophilic anion may be a structure represented by the following formula (Xa) or (Xb).

通式(Xa)中,R係表示氫原子或有機基,較佳為碳數1至40之有機基,更佳為碳數3至20之有機基,最佳為由下述式(XI)表示之有機基。In the formula (Xa), R represents a hydrogen atom or an organic group, preferably an organic group having 1 to 40 carbon atoms, more preferably an organic group having 3 to 20 carbon atoms, most preferably from the following formula (XI) Indicates the organic base.

以R之有機基而言,有一個以上之碳原子即可,較佳為於通式(Xa)表示之酯鍵中之與氧原子鍵結之原子為碳原子,例如舉出具有烷基、環烷基、芳基、芳烷基、內酯構造之基,於鏈中亦可具有氧原子、硫原子等之雜原子。又,此等亦可互相具有作為取代基,亦可具有羥基、醯基、醯氧基、氧基(=O)、鹵素原子等之取代基。The organic group of R may have one or more carbon atoms, and it is preferred that the atom bonded to the oxygen atom in the ester bond represented by the general formula (Xa) is a carbon atom, for example, having an alkyl group, The group having a cycloalkyl group, an aryl group, an aralkyl group or a lactone structure may have a hetero atom such as an oxygen atom or a sulfur atom in the chain. Further, these may have a substituent as a substituent, and may have a substituent such as a hydroxyl group, a decyl group, a decyloxy group, an oxy group (=O), or a halogen atom.

-(CH2 )n -Rc-(Y)m  式(XI)-(CH 2 ) n -Rc-(Y) m formula (XI)

式(XI)中,Rc係表示亦可含有環狀醚、環狀硫醚、環狀酮、環狀碳酸酯、內酯、內醯胺構造之碳數3至30之單環或多環之環狀有機基。Y係表示羥基、鹵素原子、氰基、羧基、碳數1至10之烴基、碳數1至10之羥烷基、碳數1至10之烷氧基、碳數1至10之醯基、碳數2至10之烷氧基羰基、碳數2至10之醯氧基、碳數2至10之烷氧基烷基、碳數1至8之鹵化烷基。m=0~6,存在多個Y之情況,彼此可相同亦可不同。n=0~10。In the formula (XI), Rc represents a monocyclic or polycyclic ring having a carbon number of 3 to 30 which may also contain a cyclic ether, a cyclic thioether, a cyclic ketone, a cyclic carbonate, a lactone or an indoleamine structure. Cyclic organic group. Y represents a hydroxyl group, a halogen atom, a cyano group, a carboxyl group, a hydrocarbon group having 1 to 10 carbon atoms, a hydroxyalkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a mercapto group having 1 to 10 carbon atoms, An alkoxycarbonyl group having 2 to 10 carbon atoms, a decyloxy group having 2 to 10 carbon atoms, an alkoxyalkyl group having 2 to 10 carbon atoms, or a halogenated alkyl group having 1 to 8 carbon atoms. m = 0 to 6, and there are a plurality of Y cases, which may be the same or different. n=0~10.

構成由式(XI)表示之R基之碳原子之總數係較佳為40以下。The total number of carbon atoms constituting the R group represented by the formula (XI) is preferably 40 or less.

n=0~3、Rc較佳為7至16之單環或多環之環狀有機基。n = 0 to 3, and Rc is preferably a monocyclic or polycyclic cyclic organic group of 7 to 16.

通式(Xb)中,Rb係表示氫原子或有機基,較佳為氫原子或碳數1至40之有機基,更佳為氫原子或碳數3至20之有機基。又Rb係亦可彼此不同,亦可彼此鍵結形成環。以Rb之有機基而言,有一個以上之碳原子即可,較佳為與於通式(Xb)表示之醯胺鍵中之氮原子鍵結之原子為碳原子,例如可舉出具有烷基、環烷基、芳基、芳烷基、內酯構造之基,於鏈中亦可具有氧原子、硫原子等之雜原子。又,此等亦可具有彼此作為取代基,亦可具有羥基、醯基、醯氧基、氧基(=O)、鹵素原子等之取代基。In the formula (Xb), Rb represents a hydrogen atom or an organic group, preferably a hydrogen atom or an organic group having 1 to 40 carbon atoms, more preferably a hydrogen atom or an organic group having 3 to 20 carbon atoms. Further, the Rb systems may be different from each other or may be bonded to each other to form a ring. The organic group of Rb may have one or more carbon atoms, and preferably the atom bonded to the nitrogen atom in the indole bond represented by the formula (Xb) is a carbon atom, and for example, an alkane may be mentioned. The group having a structure of a group, a cycloalkyl group, an aryl group, an aralkyl group or a lactone may have a hetero atom such as an oxygen atom or a sulfur atom in the chain. Further, these may have a substituent as a substituent, and may have a substituent such as a hydroxyl group, a decyl group, a decyloxy group, an oxy group (=O), or a halogen atom.

由通式(Xa)及通式(Xb)表示之非親核性陰離子部位之分子量係一般為300至1000,較佳為400至800,進一步較佳為500至700。The molecular weight of the non-nucleophilic anion moiety represented by the general formula (Xa) and the general formula (Xb) is usually from 300 to 1,000, preferably from 400 to 800, and further preferably from 500 to 700.

以作為R201 、R202 及R203 之有機基而言,可舉出例如後述之化合物(ZI-1)、(ZI-2)、(ZI-3)中之對應之基。The organic group of R 201 , R 202 and R 203 may, for example, be a group corresponding to the compounds (ZI-1), (ZI-2) and (ZI-3) described below.

另外,亦可為具有多個由通式(ZI)表示之構造之化合物。例如亦可為由通式(ZI)表示化合物之R201 至R203 之至少一個為與由通式(ZI)表示之另一個化合物之R201 至R203 之至少一個鍵結之構造之化合物。Further, it may be a compound having a plurality of structures represented by the general formula (ZI). For example, a compound in which at least one of R 201 to R 203 represented by the formula (ZI) is bonded to at least one of R 201 to R 203 of another compound represented by the formula (ZI) may be used.

進一步較佳之作為(ZI)之成分,可舉出於下說明之化合物(ZI-1)、(ZI-2)、及(ZI-3)。Further preferred as the component (ZI), the compounds (ZI-1), (ZI-2), and (ZI-3) described below are exemplified.

化合物(ZI-1)係上述通式(ZI)之R201 至R203 之至少一個為芳基之芳基鋶化合物,亦即以芳基鋶做為陽離子之化合物。The compound (ZI-1) is an arylsulfonium compound in which at least one of R 201 to R 203 of the above formula (ZI) is an aryl group, that is, a compound having an aryl sulfonium as a cation.

芳基鋶化合物係亦可R201 至R203 全為芳基,亦可R201 至R203 之一部分為芳基,剩下為烷基或環烷基。The aryl hydrazine compound may also be any of R 201 to R 203 which may be an aryl group, or a part of R 201 to R 203 may be an aryl group, with an alkyl group or a cycloalkyl group remaining.

以芳基鋶化合物而言,可舉出例如三芳基鋶化合物、二芳基烷基鋶化合物、芳基二烷基鋶化合物、二芳基環烷基鋶化合物、芳基二環烷基鋶化合物。Examples of the arylsulfonium compound include a triarylsulfonium compound, a diarylalkylsulfonium compound, an aryldialkylsulfonium compound, a diarylcycloalkylsulfonium compound, and an arylbicycloalkylsulfonium compound. .

以芳基鋶化合物之芳基而言較佳為苯基、萘基,再更佳為苯基。芳基係亦可為具有雜環構造之芳基,該雜環構造具有氧原子、氮原子、硫原子等。以具有雜環構造之芳基而言,可舉出例如吡咯殘基(藉由從吡咯失去1個氫原子而形成之基)、呋喃殘基(藉由從呋喃失去1個氫原子而形成之基)、噻吩殘基(藉由從噻吩失去1個氫原子而形成之基)、吲哚殘基(藉由從吲哚失去1個氫原子而形成之基)、苯并呋喃殘基(藉由從苯并呋喃失去1個氫原子而形成之基)、苯并噻吩殘基(藉由從苯并噻吩失去1個氫原子而形成之基)等。於芳基鋶化合物具有兩個以上之芳基之情況,兩個以上的芳基可相同亦可不同。The aryl group of the arylsulfonium compound is preferably a phenyl group or a naphthyl group, and more preferably a phenyl group. The aryl group may also be an aryl group having a heterocyclic structure having an oxygen atom, a nitrogen atom, a sulfur atom or the like. Examples of the aryl group having a heterocyclic structure include a pyrrole residue (a group formed by losing one hydrogen atom from pyrrole) and a furan residue (which is formed by losing one hydrogen atom from the furan). a thiophene residue (a group formed by the loss of one hydrogen atom from thiophene), a hydrazone residue (a group formed by losing one hydrogen atom from hydrazine), a benzofuran residue (borrowed) a group formed by losing one hydrogen atom from benzofuran, a benzothiophene residue (a group formed by losing one hydrogen atom from benzothiophene), or the like. In the case where the aryl fluorene compound has two or more aryl groups, two or more aryl groups may be the same or different.

芳基鋶化合物根據需要具有之烷基或環烷基係較佳為碳數1至15之直鏈或分枝烷基及碳數3至15之環烷基,可舉出例如甲基、乙基、丙基、正丁基、二級丁基、三級丁基、環丙基、環丁基、環己基等。The aryl hydrazine compound preferably has an alkyl group or a cycloalkyl group, and is preferably a linear or branched alkyl group having 1 to 15 carbon atoms and a cycloalkyl group having 3 to 15 carbon atoms, and examples thereof include methyl group and ethyl group. Base, propyl, n-butyl, secondary butyl, tert-butyl, cyclopropyl, cyclobutyl, cyclohexyl and the like.

R201 至R203 之芳基、烷基、環烷基係亦可具有烷基(例如碳數1至15)、環烷基(例如碳數3至15)、芳基(例如碳數6至14)、烷氧基(例如碳數1至15)、鹵素原子、羥基、苯硫基作為取代基。以較佳之取代基而言,為碳數1至12之直鏈或分枝烷基、碳數3至12之環烷基、碳數1至12之直鏈、分枝或環狀之烷氧基,更佳為碳數1至4之烷基、碳數1至4之烷氧基。取代基係取代3個R201 至R203 之中之任一個皆可,亦可取代全部3個。又,於R201 至R203 為芳基之情況,取代基係較佳為於芳基之對位進行取代。The aryl, alkyl or cycloalkyl group of R 201 to R 203 may have an alkyl group (for example, a carbon number of 1 to 15), a cycloalkyl group (for example, a carbon number of 3 to 15), and an aryl group (for example, a carbon number of 6 to 14), an alkoxy group (for example, a carbon number of 1 to 15), a halogen atom, a hydroxyl group, and a phenylthio group as a substituent. In the preferred substituent, it is a linear or branched alkyl group having 1 to 12 carbon atoms, a cycloalkyl group having 3 to 12 carbon atoms, a linear, branched or cyclic alkoxy group having 1 to 12 carbon atoms. The group is more preferably an alkyl group having 1 to 4 carbon atoms or an alkoxy group having 1 to 4 carbon atoms. The substituent system may be substituted for any of the three R 201 to R 203 , and may be substituted for all three. Further, in the case where R 201 to R 203 are an aryl group, the substituent is preferably substituted at the para position of the aryl group.

接著,說明關於化合物(ZI-2)。Next, the compound (ZI-2) will be described.

化合物(ZI-2)係為式(ZI)中之R201 至R203 各自獨立地表示不含有芳香環之有機基之化合物。在此所謂芳香環亦包含含有雜原子之芳香族環者。The compound (ZI-2) is a compound in which R 201 to R 203 in the formula (ZI) each independently represent an organic group which does not contain an aromatic ring. Here, the aromatic ring also includes an aromatic ring containing a hetero atom.

作為R201 至R203 之不含有芳香環之有機基係一般為碳數1至30,較佳為碳數1至20。The organic group which does not contain an aromatic ring as R 201 to R 203 is usually a carbon number of 1 to 30, preferably a carbon number of 1 to 20.

R201 至R203 係各自獨立地較佳為烷基、環烷基、烯丙基、乙烯基,再更佳為直鏈或分枝之2-側氧烷基、2-側氧環烷基、烷氧基羰基甲基,特佳為直鏈或分枝之2-側氧烷基。R 201 to R 203 are each independently preferably an alkyl group, a cycloalkyl group, an allyl group, a vinyl group, more preferably a linear or branched 2-sided oxyalkyl group or a 2-sided oxocycloalkyl group. An alkoxycarbonylmethyl group, particularly preferably a linear or branched 2-sided oxyalkyl group.

以R201 至R203 之烷基及環烷基而言,可舉出較佳為碳數1至10之直鏈或分枝烷基(例如:甲基、乙基、丙基、丁基、戊基)、碳數3至10之環烷基(環戊基、環己基、降莰基)。作為烷基,可舉出更佳為2-側氧烷基、烷氧基羰基甲基。作為環烷基,更佳為可舉出2-側氧環烷基。The alkyl group and the cycloalkyl group of R 201 to R 203 may, for example, be a linear or branched alkyl group having a carbon number of 1 to 10 (for example, methyl group, ethyl group, propyl group, butyl group, or the like). Pentyl), a cycloalkyl group having 3 to 10 carbon atoms (cyclopentyl, cyclohexyl, norbornyl). The alkyl group is more preferably a 2-sided oxyalkyl group or an alkoxycarbonylmethyl group. More preferably, the cycloalkyl group is a 2-sided oxocycloalkyl group.

2-側氧烷基係直鏈或分枝之任一皆可,可舉出較佳為於上述之烷基之2位具有>C=O之基。The 2-sided oxyalkyl group may be any of a straight chain or a branch, and preferably has a group of >C=O at the 2-position of the above-mentioned alkyl group.

2-側氧環烷基係可舉出較佳為於上述之環烷基之2位具有>C=O之基。The 2-oxocycloalkyl group is preferably a group having >C=O at the 2-position of the above cycloalkyl group.

以烷氧基羰基甲基中之烷氧基而言,可舉出較佳為碳數1至5之烷氧基(甲氧基、乙氧基、丙氧基、丁氧基、戊氧基)。The alkoxy group in the alkoxycarbonylmethyl group is preferably an alkoxy group having 1 to 5 carbon atoms (methoxy group, ethoxy group, propoxy group, butoxy group, pentyloxy group). ).

R201 至R203 係亦可進一步以鹵素原子、烷氧基(例如碳數1至5)、羥基、氰基、硝基取代。R 201 to R 203 may be further substituted with a halogen atom, an alkoxy group (for example, a carbon number of 1 to 5), a hydroxyl group, a cyano group or a nitro group.

所謂化合物(ZI-3),為由以下之通式(ZI-3)表示之化合物;為具有苯甲醯甲基鋶鹽構造之化合物。The compound (ZI-3) is a compound represented by the following formula (ZI-3); and is a compound having a benzamidine methyl phosphonium salt structure.

通式(ZI-3)中,R1c 至R5c 係各自獨立地表示氫原子、烷基、環烷基、烷氧基或鹵素原子。In the formula (ZI-3), R 1c to R 5c each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an alkoxy group or a halogen atom.

R6c 及R7c 係各自獨立地表示氫原子、烷基或環烷基。R 6c and R 7c each independently represent a hydrogen atom, an alkyl group or a cycloalkyl group.

Rx 及Ry 係各自獨立地表示烷基、環烷基、烯丙基或乙烯基。R x and R y each independently represent an alkyl group, a cycloalkyl group, an allyl group or a vinyl group.

R1c 至R5c 中之任一者之兩個以上、R6c 與R7c 、及Rx 與Ry 係亦可各自鍵結環形成構造,此環構造係亦可含有氧原子、硫原子、酯鍵、醯胺鍵。以R1c 至R5c 中之任一個之兩個以上、R6c 與R7c 、及Rx 與Ry 鍵結形成之基而言,可舉出伸丁基、伸戊基等。Two or more of R 1c to R 5c , R 6c and R 7c , and R x and R y may each form a ring-bonding structure, and the ring structure may also contain an oxygen atom or a sulfur atom. Ester bond, guanamine bond. Examples of the group formed by bonding two or more of R 1c to R 5c , R 6c and R 7c , and R x and R y include a butyl group, a pentyl group and the like.

Zc-係表示非親核性陰離子,可舉出與通式(ZI)中之Z- 同樣的非親核性陰離子。Zc- represents a non-nucleophilic based anion, exemplified by the general formula (ZI) in the Z - the same non-nucleophilic anion.

作為R1c 至R7c 之烷基係可為直鏈或分枝之任一者,可舉出例如碳數1至20之烷基、較佳為碳數1至12之直鏈及分枝烷基(例如:甲基、乙基、直鏈或分枝丙基、直鏈或分枝丁基、直鏈或分枝戊基),以環烷基而言,可舉出例如碳數3至8之環烷基(例如:環戊基、環己基)。The alkyl group as R 1c to R 7c may be either a straight chain or a branched chain, and examples thereof include an alkyl group having 1 to 20 carbon atoms, preferably a linear chain and a branched alkyl group having 1 to 12 carbon atoms. a group (for example, a methyl group, an ethyl group, a linear or branched propyl group, a linear or branched butyl group, a linear or branched pentyl group), and a cycloalkyl group, for example, a carbon number of 3 to a cycloalkyl group of 8 (e.g., cyclopentyl, cyclohexyl).

作為R1c 至R5c 之烷氧基係可為直鏈、分枝、環狀之任一者,可舉出例如碳數1至10之烷氧基,較佳為碳數1至5之直鏈及分枝烷氧基(例如:甲氧基、乙氧基、直鏈或分枝丙氧基、直鏈或分枝丁氧基、直鏈或分枝戊氧基)、碳數3至8之環狀烷氧基(例如:環戊氧基、環己氧基)。The alkoxy group of R 1c to R 5c may be any of a straight chain, a branch, and a ring, and may, for example, be an alkoxy group having 1 to 10 carbon atoms, preferably a carbon number of 1 to 5. Chains and branched alkoxy groups (for example: methoxy, ethoxy, linear or branched propoxy, linear or branched butoxy, linear or branched pentyloxy), carbon number 3 to a cyclic alkoxy group of 8 (e.g., cyclopentyloxy, cyclohexyloxy).

較佳為R1c 至R5c 之中之任一者為直鏈或分枝烷基、環烷基或直鏈、分枝或是環狀烷氧基,再更佳為R1c 至R5c 之碳數之和為2至15。藉此更提升溶劑溶解性,並於保存時抑制粒子之產生。Preferably, any one of R 1c to R 5c is a linear or branched alkyl group, a cycloalkyl group or a linear, branched or cyclic alkoxy group, more preferably R 1c to R 5c The sum of carbon numbers is 2 to 15. Thereby, the solvent solubility is further improved, and the generation of particles is suppressed during storage.

作為Rx 及Ry 之烷基及環烷基係可舉出與R1c 至R7c 中同樣之烷基及環烷基,更佳為2-側氧烷基、2-側氧環烷基、烷氧基羰基甲基。 Examples of the alkyl group and the cycloalkyl group of R x and R y include the same alkyl group and cycloalkyl group as in R 1c to R 7c , more preferably a 2-sided oxyalkyl group or a 2-sided oxocycloalkyl group. , alkoxycarbonylmethyl.

2-側氧烷基及2-側氧環烷基係可舉出作為R1c 至R7c 之烷基及於環烷基之2位具有>C=O之基。The 2-oxo-oxyalkyl group and the 2-oxo-oxocycloalkyl group include an alkyl group as R 1c to R 7c and a group having >C=O at the 2-position of the cycloalkyl group.

對於烷氧基羰基甲基中之烷氧基,係可舉出與R1c 至R5c 中同樣之烷氧基。The alkoxy group in the alkoxycarbonylmethyl group is the same alkoxy group as in R 1c to R 5c .

Rx 及Ry 係較佳為碳數4以上之烷基或環烷基,更佳為6以上,再更佳為8以上之烷基或環烷基。R x and R y are preferably an alkyl group or a cycloalkyl group having 4 or more carbon atoms, more preferably 6 or more, still more preferably an alkyl group or a cycloalkyl group of 8 or more.

通式(ZII)、(ZILI)中,R204 至R207 係各自獨立地表示芳基、烷基或環烷基。In the general formulae (ZII) and (ZILI), R 204 to R 207 each independently represent an aryl group, an alkyl group or a cycloalkyl group.

以R204 至R207 之芳基而言,以苯基、萘基為佳,再更佳為苯基。R204 至R207 之芳基係可為具有雜環構造之芳基,該雜環構造具有氧原子、氮原子、硫原子等。以具有雜環構造之芳基而言,可舉出例如吡咯殘基(藉由從吡咯失去1個氫原子而形成之基)、呋喃殘基(藉由從呋喃失去1個氫原子而形成之基)、噻吩殘基(藉由從噻吩失去1個氫原子而形成之基)、吲哚殘基(藉由從吲哚失去1個氫原子而形成之基)、苯并呋喃殘基(藉由從苯并呋喃失去1個氫原子而形成之基)、苯并噻吩殘基(藉由從苯并噻吩失去1個氫原子而形成之基)等。The aryl group of R 204 to R 207 is preferably a phenyl group or a naphthyl group, and still more preferably a phenyl group. The aryl group of R 204 to R 207 may be an aryl group having a heterocyclic structure having an oxygen atom, a nitrogen atom, a sulfur atom or the like. Examples of the aryl group having a heterocyclic structure include a pyrrole residue (a group formed by losing one hydrogen atom from pyrrole) and a furan residue (which is formed by losing one hydrogen atom from the furan). a thiophene residue (a group formed by the loss of one hydrogen atom from thiophene), a hydrazone residue (a group formed by losing one hydrogen atom from hydrazine), a benzofuran residue (borrowed) a group formed by losing one hydrogen atom from benzofuran, a benzothiophene residue (a group formed by losing one hydrogen atom from benzothiophene), or the like.

以R204 至R207 中之烷基及環烷基而言,可舉出較佳為碳數1至10之直鏈或分枝烷基(例如甲基、乙基、丙基、丁基、戊基)、碳數3至10之環烷基(環戊基、環己基、降莰基)。The alkyl group and the cycloalkyl group in R 204 to R 207 include a linear or branched alkyl group having preferably 1 to 10 carbon atoms (for example, methyl group, ethyl group, propyl group, butyl group, and the like). Pentyl), a cycloalkyl group having 3 to 10 carbon atoms (cyclopentyl, cyclohexyl, norbornyl).

R204 至R207 之芳基、烷基、環烷基係亦可具有取代基。以R204 至R207 之芳基、烷基、環烷基亦可具有之取代基而言,可舉出例如烷基(例如碳數1至15)、環烷基(例如碳數3至15)、芳基(例如碳數6至15)、烷氧基(例如碳數1至15)、鹵素原子、羥基、苯硫基等。R 204 to R 207 of aryl, alkyl, cycloalkyl system may have a substituent. Examples of the substituent which the aryl group, the alkyl group and the cycloalkyl group of R 204 to R 207 may have include, for example, an alkyl group (for example, a carbon number of 1 to 15) and a cycloalkyl group (for example, a carbon number of 3 to 15). And an aryl group (for example, a carbon number of 6 to 15), an alkoxy group (for example, a carbon number of 1 to 15), a halogen atom, a hydroxyl group, a phenylthio group or the like.

Z- 係表示非親核性陰離子,可舉出與通式(ZI)中Z- 之非親核性陰離子同樣者。Z - represents a non-nucleophilic based anion, exemplified by the general formula (ZI) in the Z - of the same non-nucleophilic anions are.

作為酸產生劑,進一步可舉出由下述通式(ZIV)、(ZV)、(ZVI)表示之化合物。Further, examples of the acid generator include compounds represented by the following general formulae (ZIV), (ZV), and (ZVI).

通式(ZIV)至(ZVI)中,Ar3 及Ar4 係各自獨立地表示芳基。R208 、R209 及R210 係各自獨立地表示烷基、環烷基或芳基。In the general formulae (ZIV) to (ZVI), Ar 3 and Ar 4 each independently represent an aryl group. R 208 , R 209 and R 210 each independently represent an alkyl group, a cycloalkyl group or an aryl group.

A係表示伸烷基、伸烯基或伸芳基。The A group represents an alkyl group, an alkenyl group or an aryl group.

在酸產生劑之中更佳為由通式(ZI)至(ZIII)表示之化合物。Among the acid generators, compounds represented by the general formulae (ZI) to (ZIII) are more preferred.

又,作為酸產生劑,較佳為具有一個磺酸基或醯亞胺基之產生酸之化合物,進一步較佳為1價之全氟烷基磺基之產生酸之化合物、或1價之經含氟原子或氟原子之基取代之芳香族磺基之產生酸之化合物、或1價之經含氟原子或氟原子之基取代之醯亞胺基之產生酸之化合物,進一步更佳為,氟化取代烷基磺酸、氟取代苯磺酸、氟取代醯亞胺酸或氟取代甲基化酸之鋶鹽。可使用之酸產生劑係特佳為所產生之酸之pKa為pKa=-1以下之氟化取代烷基磺酸、氟化取代苯磺酸、氟化取代醯亞胺酸,提升感度。Further, as the acid generator, an acid generating compound having a sulfonic acid group or a quinone imine group is preferred, and an acid generating compound of a monovalent perfluoroalkyl sulfo group or a monovalent product is further preferred. Further, an acid generating compound of an aromatic sulfo group substituted with a fluorine atom or a fluorine atom group, or an acid generating compound of a monovalent sulfonium atom group substituted with a fluorine atom or a fluorine atom group, further preferably, a fluorinated substituted alkylsulfonic acid, a fluorine-substituted benzenesulfonic acid, a fluorine-substituted sulfimine or a fluorinated substituted methylated acid sulfonium salt. The acid generator which can be used is particularly preferably a fluorinated substituted alkylsulfonic acid, a fluorinated substituted benzenesulfonic acid or a fluorinated substituted sulfiliic acid having a pKa of pKa = -1 or less, which enhances sensitivity.

酸產生劑之中,可舉出特佳之例於下。Among the acid generators, a particularly preferred example is given below.

[2]溶劑[2] Solvent

本發明之感光化射線性或感放射線性樹脂組成物係將含有從由下述通式(S1)至(S4)之任一者表示之群組選擇之至少1種溶劑做為混合溶劑(D)。The photosensitive ray-sensitive or radiation-sensitive resin composition of the present invention contains at least one solvent selected from the group represented by any one of the following general formulae (S1) to (S4) as a mixed solvent (D). ).

混合溶劑(D)中,由通式(S1)至(S4)之任一者表示溶劑之合計之量(總量)係全部溶劑中之1至20質量%,較佳為1至10質量%。In the mixed solvent (D), the total amount (total amount) of the solvent represented by any one of the general formulae (S1) to (S4) is 1 to 20% by mass, preferably 1 to 10% by mass based on the total of the solvent. .

通式(S1)至(S3)中,R1 至R7 係各自獨立地表示亦可具有烷基取代基、亦可具有環烷基取代基、或亦可具有芳基取代基。R1 與R2 、R3 與R4 、或R6 與R7 係亦可互相結合形成環。In the general formulae (S1) to (S3), R 1 to R 7 each independently represent an alkyl substituent, may have a cycloalkyl substituent, or may have an aryl substituent. R 1 and R 2 , R 3 and R 4 , or R 6 and R 7 may be bonded to each other to form a ring.

通式(S1)至(S3)中之R1 至R7 係較佳為烷基,更佳為R1 與R2 、R3 與R4 、或R6 與R7 互相結合形成環。R 1 to R 7 in the general formulae (S1) to (S3) are preferably an alkyl group, more preferably R 1 and R 2 , R 3 and R 4 , or R 6 and R 7 are bonded to each other to form a ring.

以R1 至R7 之烷基而言,可舉出例如碳數1至4之烷基。以環烷基而言,例如碳數3至6之環烷基(單環或多環)、以芳基而言,可舉出例如苯環、萘環、菲環、蒽環,以此等所具有之取代基而言,可舉出羥基。The alkyl group of R 1 to R 7 may, for example, be an alkyl group having 1 to 4 carbon atoms. Examples of the cycloalkyl group include a cycloalkyl group having a carbon number of 3 to 6 (monocyclic or polycyclic), and examples of the aryl group include a benzene ring, a naphthalene ring, a phenanthrene ring, and an anthracene ring. The substituent which is contained has a hydroxyl group.

又,R1 與R2 、R3 與R4 、R6 與R7 互相結合形成環(雜環)之情況,藉由R1 與R2 、R3 與R4 、R6 與R7 所形成之2價之基係較佳為碳數2至6之伸烷基。Further, when R 1 and R 2 , R 3 and R 4 , R 6 and R 7 are bonded to each other to form a ring (heterocyclic ring), R 1 and R 2 , R 3 and R 4 , R 6 and R 7 are used. The divalent base formed is preferably an alkylene group having 2 to 6 carbon atoms.

通式(S4)中,R3 及R9 係表示各自獨立地亦可具有烷基取代基,亦可兩個基互相結合形成環。In the formula (S4), R 3 and R 9 each independently may have an alkyl substituent, or two groups may be bonded to each other to form a ring.

以R8 及R9 之烷基而言,可舉出例如碳數1至5之烷基。The alkyl group of R 8 and R 9 may, for example, be an alkyl group having 1 to 5 carbon atoms.

R3 與R9 係較佳為互相結合形成環,較佳為形成5至8員環。通式(S4)係更佳為由下述通式(s4)表示。式中,n係1至4之整數。Preferably, R 3 and R 9 are bonded to each other to form a ring, preferably a 5- to 8-membered ring. The formula (S4) is more preferably represented by the following formula (s4). Wherein n is an integer from 1 to 4.

以具有由通式(S1)至(S4)表示之構造之溶劑而言,較佳為沸點(1大氣壓)為150至250℃者,更佳為180至250℃者。例如以具有γ-丁內酯等中之酯構造之溶劑、具有環戊酮、環己酮等之環狀酮構造脂溶劑、正甲基吡咯啶酮、碳酸丙二酯等為佳,尤以γ-丁內酯、環己酮為佳,最佳為γ-丁內酯。The solvent having a structure represented by the general formulae (S1) to (S4) is preferably a boiling point (1 atm) of from 150 to 250 ° C, more preferably from 180 to 250 ° C. For example, a solvent having an ester structure in γ-butyrolactone or the like, a cyclic ketone structure having a cyclopentanone or cyclohexanone, a n-methylpyrrolidone, a propylene carbonate or the like is preferable, and particularly Preferably, γ-butyrolactone or cyclohexanone is γ-butyrolactone.

作為本發明中較不佳使用之溶劑,可舉出質子性溶劑。The solvent which is less preferably used in the present invention is a protic solvent.

以質子性溶劑而言,可舉出例如乙二醇、乙二醇單甲基醚、乙二醇單乙醚、丙二醇、丙二醇單甲基醚(PGME,別名1-甲氧-2-丙醇)、丙二醇單乙醚、乳酸乙酯等。The protic solvent may, for example, be ethylene glycol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol or propylene glycol monomethyl ether (PGME, alias 1-methoxy-2-propanol). , propylene glycol monoethyl ether, ethyl lactate and the like.

作為本發明之溶劑(D),以較佳之與由上述式(S1)至(S4)表示之溶劑倂用之非質子性溶劑而言,係無特別限定,但可舉出丙二醇單甲基醚乙酸酯(PGMEA),較佳為含有PGMEA50質量%以上之混合溶劑。The solvent (D) of the present invention is preferably an aprotic solvent which is preferably used in the solvent represented by the above formulas (S1) to (S4), and is not particularly limited, but propylene glycol monomethyl ether is exemplified. The acetate (PGMEA) is preferably a mixed solvent containing 50% by mass or more of PGMEA.

作為混合溶劑(D)之合適例,可舉出含有從由通式(S1)至(S4)表示之群組選擇之至少1種溶劑與丙二醇單甲基醚乙酸酯(PGMEA)所構成之混合溶劑。Suitable examples of the mixed solvent (D) include at least one solvent selected from the group consisting of the general formulas (S1) to (S4) and propylene glycol monomethyl ether acetate (PGMEA). Mixed solvent.

[3]藉由酸之作用增大對鹼顯影液之溶解度之樹脂[3] A resin which increases the solubility to an alkali developer by the action of an acid

本發明之感光化射線性或感放射線性樹脂組成物係含有藉由酸之作用增大對鹼顯影液之溶解度之樹脂(以下亦以「樹脂(A)」或「酸分解性樹脂(A)」等言之。)而成。The sensitizing ray-sensitive or radiation-sensitive resin composition of the present invention contains a resin which increases the solubility to an alkali developer by the action of an acid (hereinafter also referred to as "resin (A)" or "acid-decomposable resin (A) "Wait."

酸分解性樹脂(A)係於樹脂之主鏈且/或側鏈具有藉由酸之作用分解並產生鹼可溶性基之基(以下亦以「酸分解性基」言之)。The acid-decomposable resin (A) is a main chain of the resin and/or a side chain having a base which is decomposed by an action of an acid to generate an alkali-soluble group (hereinafter also referred to as an "acid-decomposable group").

樹脂(A)係較佳為不溶或難溶於鹼顯影液。The resin (A) is preferably insoluble or poorly soluble in an alkali developer.

酸分解性基係較佳為具有將鹼可溶性基以藉由酸之作用分解並脫離之基保護之構造。The acid-decomposable group is preferably one having a structure in which the alkali-soluble group is decomposed and desorbed by the action of an acid.

以鹼可溶性基而言,只要是在鹼顯影液中解離形成離子之基則無特別限定,以但較佳之鹼可溶性基而言,可舉出羧基、氟化醇基(較佳為六氟異丙醇)、磺酸基。The alkali-soluble group is not particularly limited as long as it is a group which dissociates to form an ion in an alkali developing solution, and a preferred base of the alkali-soluble group is a carboxyl group or a fluorinated alcohol group (preferably hexafluoroiso). Propyl alcohol), sulfonic acid group.

作為酸分解性基較佳之基係將此等之鹼可溶性基之氫原子以用酸脫離之基取代之基。A group which is preferably an acid-decomposable group is a group in which a hydrogen atom of the alkali-soluble group is substituted with a group which is desorbed with an acid.

以用酸脫離之基而言,可舉出例如-C(R36 )(R37 )(R38 )、-C(R36 )(R37 )(OR39 )、-C(R01 )(R02 )(OR39 )等。Examples of the group which is separated by an acid include -C(R 36 )(R 37 )(R 38 ), -C(R 36 )(R 37 )(OR 39 ), -C(R 01 )( R 02 ) (OR 39 ) and so on.

式中,R36 至R39 係各自獨立地表示烷基、環烷基、芳基、芳烷基或烯基。R36 與R37 亦可互相結合形成環。In the formula, R 36 to R 39 each independently represent an alkyl group, a cycloalkyl group, an aryl group, an arylalkyl group or an alkenyl group. R 36 and R 37 may also be bonded to each other to form a ring.

R01 至R02 係各自獨立地表示氫原子、烷基、環烷基、芳基、芳烷基或烯基。R 01 to R 02 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an arylalkyl group or an alkenyl group.

以酸分解性基而言較佳為、酯基、烯醇酯基、縮醛酯基、三級烷酯基等。再更佳為三級烷酯基。Preferably, in terms of an acid-decomposable group, An ester group, an enol ester group, an acetal ester group, a tertiary alkyl ester group or the like. More preferably, it is a tertiary alkyl ester group.

以樹脂(A)含有得到之具有酸分解性基之重複單元而言,較佳為由下述通式(AI)表示之重複單元。The repeating unit having the acid-decomposable group obtained by the resin (A) is preferably a repeating unit represented by the following formula (AI).

通式(AI)中,Xa1 係表示氫原子、甲基或由-CH2 -R9 表示之基。R9 係表示羥基或1價之有機基,以有機基而言,可舉出例如碳數5以下之烷基、醯基,較佳為碳數3以下之烷基,進一步較佳為甲基。Xa1 係較佳為表示氫原子、甲基、三氟甲基或羥甲基。In the general formula (AI), Xa 1 represents a hydrogen atom, a methyl group or a group represented by -CH 2 -R 9 . R 9 is a hydroxyl group or a monovalent organic group, and examples of the organic group include an alkyl group having 5 or less carbon atoms, a mercapto group, preferably an alkyl group having 3 or less carbon atoms, and more preferably a methyl group. . Xa 1 is preferably a hydrogen atom, a methyl group, a trifluoromethyl group or a hydroxymethyl group.

T係表示單鍵或2價之連結基。The T system represents a single bond or a divalent linking group.

Rx1 至Rx3 係各自獨立  地表示烷基(直鏈或分枝)或環烷基(單環或多環)。Rx 1 to Rx 3 each independently represent an alkyl group (straight or branched) or a cycloalkyl group (monocyclic or polycyclic).

Rx1 至Rx3 之至少兩者亦可結合形成環烷基(單環或多環)。At least two of Rx 1 to Rx 3 may also be combined to form a cycloalkyl group (monocyclic or polycyclic).

以T之2價之連結基而言,可舉出伸烷基、-COO-R三級基、-O-R三級基等。式中,Rt係表示伸烷基或伸環烷基。Examples of the linking group of the two valencies of T include an alkylene group, a -COO-R tertiary group, and a -O-R tertiary group. In the formula, Rt represents an alkylene group or a cycloalkyl group.

T係較佳為單鍵或-COO-R三級基。Rt係以碳數1至5之伸烷基為佳,更佳為-CH2 -基、-(CH2 )3 -基。The T system is preferably a single bond or a -COO-R tertiary group. Rt is preferably an alkylene group having 1 to 5 carbon atoms, more preferably a -CH 2 - group or a -(CH 2 ) 3 - group.

以Rx1 至Rx3 之烷基而言,較佳為甲基、乙基、正丙基、異丙基、正丁基、異丁基、三級丁基等之碳數1至4者。The alkyl group of Rx 1 to Rx 3 is preferably a carbon number of 1 to 4 such as a methyl group, an ethyl group, a n-propyl group, an isopropyl group, a n-butyl group, an isobutyl group or a tertiary butyl group.

以Rx1 至Rx3 之環烷基而言,較佳為環戊基、環己基等之單環之環烷基、降莰基、四環癸基、四環十二烷基、金剛烷基等之多環之環烷基。Cycloalkyl to Rx 1 to Rx. 3 in terms of, preferably cyclopentyl, cyclohexyl, etc. groups of the monocyclic, norbornyl group, tetracyclodecanyl group, tetracyclododecanyl group, adamantyl A polycyclic cycloalkyl group.

以Rx1 至Rx3 之至少兩者鍵結形成之環烷基而言,較佳為環戊基、環己基等之單環之環烷基、降莰基、四環癸基、四環十二烷基、金剛烷基等之多環之環烷基。The cycloalkyl group formed by bonding at least two of Rx 1 to Rx 3 is preferably a cycloalkyl group of a cyclopentyl group, a cyclohexyl group or the like, a decyl group, a tetracyclic fluorenyl group or a tetracyclic decene group. A polycyclic cycloalkyl group such as a dialkyl group or an adamantyl group.

Rx1 為甲基或乙基,較佳為Rx2 與Rx3 結合形成上述之環烷基之態樣。Rx 1 is a methyl group or an ethyl group, preferably a combination of Rx 2 and Rx 3 to form the above cycloalkyl group.

上述各基係亦可具有取代基,以取代基而言,可舉出例如烷基(碳數1至4)、鹵素原子、羥基、烷氧基(碳數1至4)、羧基、烷氧基羰基(碳數2至6)等,較佳為碳數8以下。Each of the above-mentioned groups may have a substituent, and examples of the substituent include an alkyl group (having a carbon number of 1 to 4), a halogen atom, a hydroxyl group, an alkoxy group (having a carbon number of 1 to 4), a carboxyl group, and an alkoxy group. The carbonyl group (carbon number 2 to 6) or the like is preferably 8 or less carbon atoms.

作為具有酸分解性基之重複單元之合計含有率係相對於樹脂中之全部重複單元較佳為20至70莫耳%為佳,更佳為30至50莫耳%。The total content of the repeating unit having an acid-decomposable group is preferably from 20 to 70 mol%, more preferably from 30 to 50 mol%, based on all the repeating units in the resin.

於下表示較佳之具有酸分解性基之重複單元之具體例,但本發明係不為限定於此者。Specific examples of the repeating unit having a preferred acid-decomposable group are shown below, but the present invention is not limited thereto.

具體例中,Rx、Xa1 係表示氫原子、CH3 、CF3 、或CH2 OH。Rxa、Rxb係各自表示碳數1至4之烷基。Z係表示含極性基之取代基、羥基、氰基、胺基、烷醯胺基或是磺醯胺基,或表示具有此等之任一者、直鏈或是分枝之烷基或環烷基。存在多個之情況下係各自獨立。p表示係0或正之整數。In a specific example, Rx and Xa 1 represent a hydrogen atom, CH 3 , CF 3 or CH 2 OH. Rxa and Rxb each represent an alkyl group having 1 to 4 carbon atoms. The Z system represents a substituent containing a polar group, a hydroxyl group, a cyano group, an amine group, an alkanoylamino group or a sulfonylamino group, or an alkyl group or a ring having any of these, a straight chain or a branched chain. alkyl. In the case where there are multiple cases, they are independent. p represents a system 0 or a positive integer.

樹脂(A)係作為由通式(AI)由表示重複單元,較佳為具有由通式(1)表示重複單元及由通式(2)表示重複單元之至少之一之樹脂。又,樹脂(A)係於其他形態中,做為由通式(AI)表示之重複單元較佳為具有由通式(1)表示重複單元之至少2種之樹脂,又,亦較佳為具有由通式(1)表示之重複單元之至少1種與由通式(2)表示重複單元之至少1種之樹脂。The resin (A) is a resin represented by the general formula (AI), and preferably has at least one of a repeating unit represented by the formula (1) and a repeating unit represented by the formula (2). Further, the resin (A) is in another form, and the repeating unit represented by the general formula (AI) is preferably a resin having at least two kinds of repeating units represented by the general formula (1), and is also preferably a resin. A resin having at least one of a repeating unit represented by the formula (1) and at least one of a repeating unit represented by the formula (2).

式(1)及(2)中,R1 、R3 係各自獨立表示氫原子、甲基或由-CH2 -R9 表示之基。R9 係表示羥基或1價之有機基。In the formulae (1) and (2), R 1 and R 3 each independently represent a hydrogen atom, a methyl group or a group represented by -CH 2 -R 9 . R 9 represents a hydroxyl group or a monovalent organic group.

R2 、R4 、R5 、R6 係各自獨立表示烷基或環烷基。R 2 , R 4 , R 5 and R 6 each independently represent an alkyl group or a cycloalkyl group.

R係表示與碳原子一起形成脂環構造所必需之原子團。R represents an atomic group necessary for forming an alicyclic structure together with a carbon atom.

R1 係表示較佳為氫原子、甲基、三氟甲基或羥甲基。R 1 represents preferably a hydrogen atom, a methyl group, a trifluoromethyl group or a hydroxymethyl group.

R2 中之烷基係可為直鏈型亦可為分枝型,亦可具有取代基。The alkyl group in R 2 may be a linear type or a branched type, and may have a substituent.

R2 中之環烷基係可為單環亦可為多環,亦可具有取代基。The cycloalkyl group in R 2 may be a single ring or a polycyclic ring or may have a substituent.

R2 係較佳為烷基,更佳為碳數1至10再更佳為1至5者,可舉出例如甲基、乙基。R 2 is preferably an alkyl group, more preferably 1 to 10 carbon atoms, still more preferably 1 to 5 carbon atoms, and examples thereof include a methyl group and an ethyl group.

R係表示與碳原子一起形成脂環構造所必需之原子團。以R形成之脂環構造而言,較佳為單環之脂環構造,其碳數係較佳為3至7、更佳為5或6。R represents an atomic group necessary for forming an alicyclic structure together with a carbon atom. The alicyclic structure formed by R is preferably a monocyclic alicyclic structure having a carbon number of preferably 3 to 7, more preferably 5 or 6.

R3 係較佳為氫原子或甲基,更佳為甲基。R 3 is preferably a hydrogen atom or a methyl group, more preferably a methyl group.

R4 、R5 、R6 中之烷基係可為直鏈型亦可為分枝型,亦可具有取代基。以烷基而言,較佳為甲基、乙基、正丙基、異丙基、正丁基、異丁基、三級丁基等之碳數1至4者。The alkyl group in R 4 , R 5 and R 6 may be a linear type or a branched type, and may have a substituent. The alkyl group is preferably a carbon number of 1 to 4 such as a methyl group, an ethyl group, a n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group or a tertiary butyl group.

R4 、R5 、R6 中之環烷基係可為單環亦可為多環,亦可具有取代基。以環烷基而言,較佳為環戊基、環己基等之單環之環烷基、降莰基、四環癸基、四環十二烷基、金剛烷基等之多環之環烷基。The cycloalkyl group in R 4 , R 5 and R 6 may be a single ring or a polycyclic ring or may have a substituent. In the case of a cycloalkyl group, a polycyclic ring such as a cyclopentyl group such as a cyclopentyl group or a cyclohexyl group, a decyl group, a tetracyclononyl group, a tetracyclododecyl group or an adamantyl group is preferable. alkyl.

作為由通式(1)表示重複單元,可舉出由下述通式(1-a)表示之重複單元。The repeating unit represented by the formula (1) includes a repeating unit represented by the following formula (1-a).

式中,R1 及R2 係與通式(1)中之各者同義。In the formula, R 1 and R 2 are synonymous with each of the formula (1).

由通式(2)表示之重複單元較佳為由以下之通式(2-1)表示之重複單元。The repeating unit represented by the formula (2) is preferably a repeating unit represented by the following formula (2-1).

式(2-1)中,R3 至R5 係與通式(2)中之各者同義。In the formula (2-1), R 3 to R 5 are synonymous with each of the formula (2).

R10 係表示含極性基之取代基。存在多個R10 之情況,其係可彼此相同亦可不同。以含極性基之取代基而言,可舉出例如羥基、氰基、胺基、烷醯胺基或是磺醯胺基、或、具有此等之任一者之直鏈或是分枝之烷基或環烷基,較佳為具有羥基之烷基。更佳為具有羥基之分枝狀烷基。以分枝狀烷基而言尤以異丙基為佳。R 10 represents a substituent containing a polar group. There are a plurality of R 10 cases, which may be the same or different from each other. The substituent containing a polar group may, for example, be a hydroxyl group, a cyano group, an amine group, an alkanoylamino group or a sulfonylamino group, or a linear or branched group having any of these. The alkyl group or the cycloalkyl group is preferably an alkyl group having a hydroxyl group. More preferably, it is a branched alkyl group having a hydroxyl group. In the case of a branched alkyl group, an isopropyl group is preferred.

p係表示0至15之整數。p係較佳為0至2,更佳為0或1。p is an integer from 0 to 15. The p-system is preferably from 0 to 2, more preferably 0 or 1.

以樹脂(A)倂用酸分解重複單元之情況之較佳組合而言,較佳為於下舉出者。下式中,R係各自獨立地表示氫原子或甲基。A preferred combination of the case where the resin (A) is decomposed with an acid by a repeating unit is preferably exemplified below. In the following formula, R each independently represents a hydrogen atom or a methyl group.

樹脂(A)係較佳為含有具有內酯基之重複單元。The resin (A) preferably contains a repeating unit having a lactone group.

以內酯基而言,只要具有內酯構造即可使用任一者,但較佳為5至7員環內酯構造,以形成雙環構造、螺構造之形式於5至7員環內酯構造縮環其他之環構造者為佳。更佳為具有由下述通式(LC1-1)至(LC1-17)之任一者表示之具有內酯構造之重複單元。又,內酯構造亦可為直接鍵結於主鏈。以較佳之內酯構造而言為(LC1-1)、(LC1-4)、(LC1-5)、(LC1-6)、(LC1-13)、(LC1-14)、(LC1-17),以用於特定之中之酯構造而使LWR、顯影缺陷變良好。In the case of a lactone group, any one may be used as long as it has a lactone structure, but it is preferably a 5- to 7-membered ring lactone structure to form a bicyclic structure or a spiro structure in the form of a 5- to 7-membered cyclic lactone. It is better to construct other ring structures. More preferably, it has a repeating unit having a lactone structure represented by any one of the following general formulae (LC1-1) to (LC1-17). Further, the lactone structure may be directly bonded to the main chain. In terms of preferred lactone structure, (LC1-1), (LC1-4), (LC1-5), (LC1-6), (LC1-13), (LC1-14), (LC1-17) The LWR and development defects are improved by the ester structure used in the specific one.

內酯構造部分係可有取代基(Rb2 )亦可沒有。以較佳之取代基(Rb2 )而言,可舉出碳數1至8之烷基、碳數4至7之環烷基、碳數1至8之烷氧基、碳數1至8之烷氧基羰基、羧基、鹵素原子、羥基、氰基、酸分解性基等。更佳為碳數1至4之烷基、氰基、酸分解性基。n2 係表示0至4之整數。n2 為2以上時,存在多個的取代基(Rb2 )係可相同亦可不同。又,存在多個的取代基(Rb2 )亦可彼此鍵結形成環。The lactone structural moiety may or may not have a substituent (Rb 2 ). In (2 Rb) in terms of preferred substituents include an alkyl group of 1 to 8 carbon atoms, a cycloalkyl group having a carbon number of 4 to 7 carbon atoms of an alkoxy group having 1 to 8 carbon atoms of 1 to 8, An alkoxycarbonyl group, a carboxyl group, a halogen atom, a hydroxyl group, a cyano group, an acid-decomposable group, or the like. More preferably, it is an alkyl group having 1 to 4 carbon atoms, a cyano group, and an acid-decomposable group. The n 2 system represents an integer of 0 to 4. When n 2 is 2 or more, a plurality of substituents (Rb 2 ) may be the same or different. Further, a plurality of substituents (Rb 2 ) may be bonded to each other to form a ring.

以具有內酯構造之重複單元而言。較佳為由下述通式(AII)表示之重複單元。In the case of a repeating unit having a lactone structure. A repeating unit represented by the following formula (AII) is preferred.

通式(AII)中,Rb0 係表示氫原子、鹵素原子或碳數1至4之烷基。Rb0 亦可具有烷基,以較佳之取代基而言,可舉出羥基、鹵素原子。以Rb0 之鹵素原子而言可舉出氟原子、氯原子、溴原子、碘原子。較佳為氫原子、甲基、羥甲基、三氟甲基,特佳為氫原子、甲基。In the formula (AII), Rb 0 represents a hydrogen atom, a halogen atom or an alkyl group having 1 to 4 carbon atoms. Rb 0 may have an alkyl group, and a preferred substituent is a hydroxyl group or a halogen atom. Examples of the halogen atom of Rb 0 include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom. It is preferably a hydrogen atom, a methyl group, a methylol group or a trifluoromethyl group, and particularly preferably a hydrogen atom or a methyl group.

Ab係表示單鍵、伸烷基、具有單環或多環之脂環烴構造之2價之連結基、醚基、酯基、羰基、或組合了此等之2價之連結基。較佳為單鍵、由-Ab1 -CO2 -表示之2價之連結基。Ab1 係直鏈、分枝伸烷基、單環或多環之伸環烷基,較佳為亞甲基、伸乙基、環伸己基、伸金剛烷基、伸降莰烷基。Ab is a 2-valent linking group, an ether group, an ester group, a carbonyl group, or a combination of these two-valent linking groups, which has a single bond, an alkylene group, a monocyclic or polycyclic alicyclic hydrocarbon structure. It is preferably a single bond, a divalent linking group represented by -Ab 1 -CO 2 -. Ab 1 is a linear, branched alkyl, monocyclic or polycyclic cycloalkyl group, preferably a methylene group, an ethyl group, a cyclohexyl group, an adamantyl group, or a decyl group.

V係表示具有內酯構造之基。具體而言,例如表示具有由通式(LC1-1)至(LC1-17)之中之任一者表示之構造之基。V is a group having a lactone structure. Specifically, for example, it means a group having a structure represented by any one of the general formulae (LC1-1) to (LC1-17).

由通式(AII)表示之單元之中,以於Ab為單鍵的情況特佳之具有內酯基之重複單元而言,可舉出下述之重複單元。具體例中,Rx係表示H、CH3 、CH2 OH或CF3 。藉由選擇最適合之內酯基而行,圖案外觀、疏密依存性變良好。Among the units represented by the general formula (AII), the repeating unit having a lactone group particularly preferably in the case where Ab is a single bond includes the following repeating unit. In a specific example, Rx represents H, CH 3 , CH 2 OH or CF 3 . By selecting the most suitable lactone group, the appearance of the pattern and the density dependence become good.

樹脂(A)係較佳為含有具有由下述通式(3)表示之內酯構造之重複單元。The resin (A) preferably contains a repeating unit having a lactone structure represented by the following formula (3).

式(3)中,A係表示酯鍵(由-COO-表示之基)或由-CONH-表示之基。In the formula (3), the A group represents an ester bond (group represented by -COO-) or a group represented by -CONH-.

R0 係於有多個之情況,各自獨立地表示伸烷基、伸環烷基、或其組合。R 0 is a plurality of cases, each independently representing an alkylene group, a cycloalkyl group, or a combination thereof.

Z係於有多個之情況,各自獨立地表示醚鍵、酯鍵、醯胺鍵、胺基甲酸酯鍵、或尿素鍵結。When there are a plurality of Z systems, each independently represents an ether bond, an ester bond, a guanamine bond, a urethane bond, or a urea bond.

R8 係表示具有內酯構造之1價之有機基。R 8 represents a monovalent organic group having a lactone structure.

n係由式(3)表示之重複單元中之由-R0 -Z-表示之構造的重複數,表示1至5之整數。n is a repeating number of a structure represented by -R 0 -Z- in the repeating unit represented by the formula (3), and represents an integer of 1 to 5.

R7 係表示氫原子、鹵素原子或烷基。R 7 represents a hydrogen atom, a halogen atom or an alkyl group.

R0 之伸烷基、環狀伸烷基亦可具有取代基。The alkylene group and the cyclic alkyl group of R 0 may have a substituent.

Z係較佳為醚鍵、酯鍵,特佳為酯鍵。The Z system is preferably an ether bond or an ester bond, and particularly preferably an ester bond.

R7 之烷基係以碳數1至4之烷基為佳,以甲基、乙基為更佳,尤以甲基為佳。R7 中之烷基係亦可被取代,以取代基而言,例如舉出氟原子、氯原子、溴原子等之鹵素原子或巰基、羥基、甲氧基、乙氧基、異丙氧基、三級丁氧基、苄氧基等之烷氧基、乙醯基、丙醯基等之乙醯氧基。R7 係較佳為氫原子、甲基、三氟甲基、羥甲基。The alkyl group of R 7 is preferably an alkyl group having 1 to 4 carbon atoms, more preferably a methyl group or an ethyl group, and particularly preferably a methyl group. The alkyl group in R 7 may be substituted, and examples of the substituent include a halogen atom or a mercapto group such as a fluorine atom, a chlorine atom or a bromine atom, a hydroxyl group, a methoxy group, an ethoxy group, and an isopropoxy group. And an alkoxy group such as a tertiary butoxy group or a benzyloxy group; an ethoxy group such as an ethyl sulfonyl group or a propyl fluorenyl group; R 7 is preferably a hydrogen atom, a methyl group, a trifluoromethyl group or a hydroxymethyl group.

以R0 中之較佳之鏈狀伸烷基而言,以碳數為1至10之鏈狀之伸烷為佳,更佳為碳數1至5,可舉出例如亞甲基、伸乙基、伸丙基等。以較佳之環狀伸烷而言,為碳數1至20之環狀伸烷,可舉出例如環伸己烷、環伸戊烷、伸降莰烷、伸金剛烷等。為了表現本發明之效果較佳為鏈狀伸烷基,尤以亞甲基為佳。The preferred chain alkyl group in R 0 is preferably a chain alkylene having a carbon number of 1 to 10, more preferably a carbon number of 1 to 5, and examples thereof include a methylene group and a stretching group. Base, propyl and the like. In the case of the preferred cyclic alkylene, the cyclic alkylene having 1 to 20 carbon atoms may, for example, be a cyclohexane, a cyclopentane, a decane, an adamantane or the like. In order to express the effect of the present invention, a chain alkyl group is preferred, and a methylene group is preferred.

由R8 表示之具有內酯構造之取代基只要具有內酯構造即可並未被限定,作為具體例,可舉出由通式(LC1-1)至(LC1-17)表示之內酯構造,此等之中由(LC1-4)表示之構造尤其佳。又,(LC1-1)至(LC1-17)中之n2 係2以下者更佳。The substituent having a lactone structure represented by R 8 is not limited as long as it has a lactone structure, and specific examples thereof include a lactone structure represented by the general formulae (LC1-1) to (LC1-17). Among these, the structure represented by (LC1-4) is particularly preferable. Further, it is more preferable that n 2 is 2 or less in (LC1-1) to (LC1-17).

又,R8 係無取代之具有內酯構造之1價之有機基,或較佳為具有以甲基、氰基或烷氧基羰基作為取代基具有內酯構造之1價之有機基,以氰基作為取代基具有內酯構造(氰內酯)之1價之有機基更佳。Further, R 8 is an unsubstituted organic group having a lactone structure, or preferably a monovalent organic group having a lactone structure with a methyl group, a cyano group or an alkoxycarbonyl group as a substituent, The cyano group as a substituent has a monovalent organic group having a lactone structure (cyanolactone).

於下表示由通式(3)表示之有具有內酯構造基之重複單元之具體例,但本發明係不限定於此者。Specific examples of the repeating unit having a lactone structural group represented by the general formula (3) are shown below, but the present invention is not limited thereto.

下述具體例中,R係表示氫原子、亦可具有取代基之烷基或鹵素原子,較佳為表示氫原子、甲基、具有取代基之烷基的羥甲基、乙醯氧甲基。In the following specific examples, R represents a hydrogen atom, an alkyl group or a halogen atom which may have a substituent, and preferably represents a hydrogen atom, a methyl group, a methyl group having a substituent, a hydroxymethyl group or an acetoxymethyl group. .

以具有內酯構造之重複單元而言,更佳為由下述通式(3-1)表示之重複單元。The repeating unit having a lactone structure is more preferably a repeating unit represented by the following formula (3-1).

通式(3-1)中,R7 、A、R0 、Z、及n係與上述通式(3)同義。In the formula (3-1), R 7 , A, R 0 , Z, and n are synonymous with the above formula (3).

R9 係於有多個的情況各自獨立地表示烷基、環烷基、烷氧基羰基、氰基、羥基或烷氧基,於有多個的情況,兩個R9 亦可鍵結並形成環。When R 9 is plural, each independently represents an alkyl group, a cycloalkyl group, an alkoxycarbonyl group, a cyano group, a hydroxyl group or an alkoxy group. In the case of a plurality of R 9 groups, two R 9 groups may be bonded and Form a ring.

X係表示伸烷基、氧原子或硫原子。The X system represents an alkyl group, an oxygen atom or a sulfur atom.

m係為取代基數,表示0至5之整數。m係較佳為0或1。m is the number of substituents and represents an integer of 0 to 5. The m system is preferably 0 or 1.

以R9 之烷基而言,以碳數1至4之烷基為佳,更佳為甲基、乙基,最佳為甲基。以環烷基而言,可舉出環丙基、環丁基、環戊基、環己基。以酯基而言可舉出甲氧基羰基、乙氧基羰基、正丁氧基羰基、三級丁氧基羰基等。以取代基而言可舉出羥基、甲氧基、乙氧基等之烷氧基、氰基、氟原子等之鹵素原子。The alkyl group of R 9 is preferably an alkyl group having 1 to 4 carbon atoms, more preferably a methyl group or an ethyl group, and most preferably a methyl group. The cycloalkyl group may, for example, be a cyclopropyl group, a cyclobutyl group, a cyclopentyl group or a cyclohexyl group. The ester group may, for example, be a methoxycarbonyl group, an ethoxycarbonyl group, a n-butoxycarbonyl group or a tertiary butoxycarbonyl group. Examples of the substituent include a halogen atom such as an alkoxy group such as a hydroxyl group, a methoxy group or an ethoxy group, a cyano group or a fluorine atom.

R9 係更佳為甲基、氰基或烷氧基羰基,再更佳為氰基。The R 9 system is more preferably a methyl group, a cyano group or an alkoxycarbonyl group, and still more preferably a cyano group.

以X之伸烷基而言舉出亞甲基、伸乙基等。X係較佳為氧原子或亞甲基,進一步較佳為亞甲基。The alkyl group of X is a methylene group, an ethyl group, and the like. The X system is preferably an oxygen atom or a methylene group, and more preferably a methylene group.

m=1之情況,較佳為R9 係於內酯之羰基之α位或β位進行取代,尤其較佳為於α位進行取代。In the case of m = 1, it is preferred that R 9 is substituted at the α-position or the β-position of the carbonyl group of the lactone, and it is particularly preferred to carry out the substitution at the α-position.

由通式(3-1)表示有具有內酯構造之基的重複單元之具體例,但本發明係不限定於此者。式中,R係表示氫原子、亦可具有取代基之烷基或鹵素原子,較佳表示為氫原子、甲基、為具有取代基之烷基的羥甲基、乙醯氧甲基。Specific examples of the repeating unit having a group having a lactone structure are represented by the general formula (3-1), but the present invention is not limited thereto. In the formula, R is a hydrogen atom or an alkyl group or a halogen atom which may have a substituent, and is preferably a hydrogen atom, a methyl group, a methylol group having a substituent, or an ethoxymethyl group.

具有內酯基之重複單元係通常存在有光學異構體,但亦可使用任一之光學異構體。The repeating unit having a lactone group usually has an optical isomer, but any optical isomer can also be used.

具有內酯基之重複單元之含有率係相對於樹脂中之全部重複單元以15至60莫耳%為佳、更佳為20至50莫耳%,再更佳為30至50莫耳%。The content of the repeating unit having a lactone group is preferably from 15 to 60 mol%, more preferably from 20 to 50 mol%, still more preferably from 30 to 50 mol%, based on all the repeating units in the resin.

為了提高本發明之效果,亦可倂用從通式(3)選出的2種以上之內酯重複單元。倂用之情況於通式(3)之中,較佳為從n為1之內酯重複單元選擇2種以上來倂用。又,通式(AII)中Ab為單鍵之內酯重複單元與通式(3)之中倂用n為1之內酯重複單元亦較佳。In order to enhance the effect of the present invention, two or more lactone repeating units selected from the general formula (3) may be used. In the case of the general formula (3), it is preferred to use two or more kinds of lactone repeating units having n of 1 for use. Further, in the general formula (AII), a repeating unit in which Ab is a single bond and a repeating unit in which a n is 1 in the formula (3) is also preferable.

樹脂(A)係較佳為有具有羥基或氰基之重複單元(由前述之通式(3)或(AI)表示之重複單元等具有羥基或氰基的情況係不包含於此。)。藉此提升基板密著性、顯影液親和性。具有羥基或氰基之重複單元係較佳為具有經羥基或氰基取代之脂環烴構造之重複單元。經羥基或氰基取代之脂環烴構造中,以脂環烴構造而言較佳為金剛烷基、鑽石烷基、降莰基。以較佳之經羥基或氰基取代之脂環烴構造而言,可舉出單羥金剛烷基、二羥基金剛烷基、單羥基鑽石烷基、二羥基金剛烷基、經氰基取代之降莰基等。The resin (A) is preferably a repeating unit having a hydroxyl group or a cyano group (a repeating unit represented by the above formula (3) or (AI) has a hydroxyl group or a cyano group, and is not included.). Thereby, the substrate adhesion and the developer affinity are improved. The repeating unit having a hydroxyl group or a cyano group is preferably a repeating unit having an alicyclic hydrocarbon structure substituted with a hydroxyl group or a cyano group. In the alicyclic hydrocarbon structure substituted by a hydroxyl group or a cyano group, an adamantyl group, a diamond alkyl group or a norbornyl group is preferable in terms of an alicyclic hydrocarbon structure. Preferred examples of the alicyclic hydrocarbon structure substituted by a hydroxyl group or a cyano group include a monohydroxyadamantyl group, a dihydroxyadamantyl group, a monohydroxy diamond alkyl group, a dihydroxyadamantyl group, and a cyano group substitution.莰基等.

以具有上述原子團之重複單元而言,可舉出由下述通式(AIIa)至(AIId)表示之重複單元。Examples of the repeating unit having the above atomic group include repeating units represented by the following general formulae (AIIa) to (AIId).

通式(AIIa)至(AIId)中,R1 c係表示氫原子、甲基、三氟甲基或羥甲基。In the general formulae (AIIa) to (AIId), R 1 c represents a hydrogen atom, a methyl group, a trifluoromethyl group or a hydroxymethyl group.

R2 c至R4 c係各自獨立地表示氫原子、羥基或氰基。但是,R2 c至R4 c之中之至少一個係表示羥基或氰基。較佳為R2 c至R4 c之中之一個或兩個為羥基,其餘為氫原子。通式(VIIa)中,再更佳為R2 c至R4 c之中之兩個為羥基,其餘為氫原子。R 2 c to R 4 c each independently represent a hydrogen atom, a hydroxyl group or a cyano group. However, at least one of R 2 c to R 4 c represents a hydroxyl group or a cyano group. Preferably, one or both of R 2 c to R 4 c are a hydroxyl group, and the balance is a hydrogen atom. In the formula (VIIa), it is more preferred that two of R 2 c to R 4 c are a hydroxyl group, and the balance is a hydrogen atom.

具有羥基或氰基之重複單元之含有率係相對於樹脂(A)中之全部重複單元以5至40莫耳%為佳,更佳為5至30莫耳%,再更佳為10至25莫耳%。The content of the repeating unit having a hydroxyl group or a cyano group is preferably from 5 to 40 mol%, more preferably from 5 to 30 mol%, still more preferably from 10 to 25, based on all the repeating units in the resin (A). Moer%.

於下舉出具有羥基或氰基之重複單元之具體例,但本發明係不被限定於此等。Specific examples of the repeating unit having a hydroxyl group or a cyano group are given below, but the present invention is not limited thereto.

用於本發明之感光化射線性或感放射線性樹脂組成物之樹脂係亦可有具有鹼可溶性基之重複單元。以鹼可溶性基而言可舉出羧基、磺醯基胺基、磺醯基醯亞胺基、雙磺醯基醯亞胺基、α位為經吸電子基取代之脂肪族醇(例如六氟異丙醇基),更佳為有具有羧基之重複單元。藉由含有具有鹼可溶性基之重複單元,增加在接觸孔用途之解像性。以具有鹼可溶性基之重複單元而言,如以丙烯酸、甲基丙烯酸而成之重複單元直接鍵結鹼可溶性基於樹脂主鏈之重複單元、或是經由連結基鍵結鹼可溶性基於樹脂主鏈之重複單元,進一步用於聚合具有鹼可溶性基之聚合起始劑或連鏈移動劑時,導入聚合物鏈之末端,之任一者亦為佳,連結基係亦可具有單環或多環之環狀烴構造。特佳為以丙烯酸、甲基丙烯酸而成之重複單元。The resin used in the sensitizing ray-sensitive or radiation-sensitive resin composition of the present invention may have a repeating unit having an alkali-soluble group. Examples of the alkali-soluble group include a carboxyl group, a sulfonylamino group, a sulfonyl fluorenylene group, a bis-sulfonyl fluorenylene group, and an α-position of an aliphatic alcohol substituted with an electron withdrawing group (for example, hexafluorocarbon). Isopropanol group) is more preferably a repeating unit having a carboxyl group. The resolution in the use of the contact hole is increased by containing a repeating unit having an alkali-soluble group. In the case of a repeating unit having an alkali-soluble group, a repeating unit such as acrylic acid or methacrylic acid directly bonds an alkali-soluble repeating unit based on a resin backbone, or an alkali-soluble resin-based backbone via a linking group The repeating unit, when further used for polymerizing a polymerization initiator or a chain shifting agent having an alkali-soluble group, is preferably introduced into the end of the polymer chain, and the linking group may also have a single ring or a polycyclic ring. Cyclic hydrocarbon structure. Particularly preferred is a repeating unit made of acrylic acid or methacrylic acid.

具有鹼可溶性基之重複單元之含有率係相對於樹脂(A)中之全部重複單元以0至20莫耳%為佳,更佳為3至15莫耳%,進一步較佳為5至10莫耳%。The content of the repeating unit having an alkali-soluble group is preferably 0 to 20 mol%, more preferably 3 to 15 mol%, still more preferably 5 to 10 mol% based on all the repeating units in the resin (A). ear%.

以下表示具有鹼可溶性基之重複單元之具體例,但本發明係不為限定於此者。具體例中,Rx係表示H、CH3 、CH2 OH或CF3Specific examples of the repeating unit having an alkali-soluble group are shown below, but the present invention is not limited thereto. In a specific example, Rx represents H, CH 3 , CH 2 OH or CF 3 .

本發明之樹脂(A)係較佳為進一步具有不具極性基之脂環烴構造、具有不顯示酸分解性之重複單元。藉此於液浸曝光時可減低從以感光化射線性或感放射線性樹脂組成物所形成之膜溶出低分子成分至液浸液。以如此之重複單元而言舉出由通式(4)表示之重複單元。The resin (A) of the present invention preferably further has an alicyclic hydrocarbon structure having no polar group and a repeating unit which does not exhibit acid decomposition property. Thereby, it is possible to reduce the elution of the low molecular component from the film formed of the photosensitive ray-sensitive or radiation-sensitive resin composition to the liquid immersion liquid during immersion exposure. The repeating unit represented by the general formula (4) is exemplified as such a repeating unit.

通式(4)中,R5 係表示具有至少一個環狀構造,沒有羥基及氰基之任一者之烴基。In the formula (4), R 5 represents a hydrocarbon group having at least one cyclic structure and having no hydroxyl group or cyano group.

Ra係表示氫原子、烷基或-CH2-O-Ra2 基。式中,Ra2 係表示氫原子、烷基或醯基。Ra係以氫原子、甲基、羥甲基、三氟甲基為佳,以氫原子、甲基為特佳。The Ra system represents a hydrogen atom, an alkyl group or a -CH2-O-Ra 2 group. In the formula, Ra 2 represents a hydrogen atom, an alkyl group or a fluorenyl group. Ra is preferably a hydrogen atom, a methyl group, a methylol group or a trifluoromethyl group, and particularly preferably a hydrogen atom or a methyl group.

於R5 具有之環狀構造,含有單環式烴基及多環式烴基。以單環式烴基而言,可舉出例如碳數3至12之環烷基、碳數3至12之環烯基。以較佳之單環式烴基而言,為碳數3至7之單環式烴基。The cyclic structure of R 5 has a monocyclic hydrocarbon group and a polycyclic hydrocarbon group. The monocyclic hydrocarbon group may, for example, be a cycloalkyl group having 3 to 12 carbon atoms or a cycloalkenyl group having 3 to 12 carbon atoms. In the preferred monocyclic hydrocarbon group, it is a monocyclic hydrocarbon group having 3 to 7 carbon atoms.

於多環式烴基,含有環集合烴基、交聯環式烴基。作為交聯環式烴環,可舉出2環式烴環、3環式烴環、4環式烴環等。又,於交聯環式烴環,亦含有縮合環式烴環(例如縮和多個5至8員環烷基環而成之縮合環)。作為較佳之交聯環式烴環可舉出降莰基、金剛烷基。In the polycyclic hydrocarbon group, it contains a cyclic hydrocarbon group and a crosslinked cyclic hydrocarbon group. Examples of the crosslinked cyclic hydrocarbon ring include a bicyclic hydrocarbon ring, a tricyclic hydrocarbon ring, and a 4-ring hydrocarbon ring. Further, the crosslinked cyclic hydrocarbon ring also contains a condensed cyclic hydrocarbon ring (for example, a condensed ring obtained by shrinking a plurality of 5- to 8-membered cycloalkyl rings). Preferred examples of the crosslinked cyclic hydrocarbon ring include a thiol group and an adamantyl group.

此等之脂環式烴基係亦可具有取代基,以較佳之取代基而言舉出鹵素原子、烷基、經保護基保護之羥基、經保護基保護之胺基等。以較佳之鹵素原子而言係溴、氯、氟原子,以較佳之烷基而言舉出甲基、乙基、丁基、三級丁基。上述之烷基係亦可進一步具有取代基,以亦可進一步具有之取代基而言,可舉出鹵素原子、烷基、經保護基保護之羥基、經保護基保護之胺基。The alicyclic hydrocarbon group may have a substituent. Preferred substituents include a halogen atom, an alkyl group, a protecting group-protected hydroxyl group, a protecting group-protected amine group, and the like. The preferred halogen atom is a bromine, chlorine or fluorine atom, and a preferred alkyl group is a methyl group, an ethyl group, a butyl group or a tertiary butyl group. The above alkyl group may further have a substituent, and examples of the substituent may further include a halogen atom, an alkyl group, a protecting group-protected hydroxyl group, and a protecting group-protected amine group.

以保護基而言,可舉出例如烷基、環烷基、芳烷基、經取代之甲基、經取代之乙基、烷氧基羰基、芳烷基氧基羰基。以較佳之烷基而言舉出碳數1至4之烷基,以較佳之經取代之甲基而言舉出甲氧基甲基、甲氧基硫甲基、苄氧基甲基、三級丁氧基甲基、2-甲氧基乙氧基甲基,以較佳之經取代之乙基而言,可舉出1-乙氧基乙基、1-甲基-1-甲氧基乙基,以較佳之醯基而言,可舉出甲醯基、乙醯基、丙醯基、丁醯基、異丁醯基、戊醯基、三甲基乙醯基等之碳數1至6之脂肪族醯基,以烷氧基羰基而言舉出碳數1至4之烷氧基羰基等。The protecting group may, for example, be an alkyl group, a cycloalkyl group, an aralkyl group, a substituted methyl group, a substituted ethyl group, an alkoxycarbonyl group or an aralkyloxycarbonyl group. The preferred alkyl group is an alkyl group having 1 to 4 carbon atoms, and the preferred substituted methyl group is methoxymethyl, methoxythiomethyl, benzyloxymethyl or the like. a butoxymethyl group, a 2-methoxyethoxymethyl group, and a preferably substituted ethyl group, a 1-ethoxyethyl group, a 1-methyl-1-methoxy group The ethyl group, preferably a mercapto group, may have a carbon number of 1 to 6 such as a mercapto group, an ethyl fluorenyl group, a propyl fluorenyl group, a butyl sulfonyl group, an isobutyl fluorenyl group, a pentamidine group or a trimethyl acetyl group. The group is a fluorenyl group, and the alkoxycarbonyl group is an alkoxycarbonyl group having 1 to 4 carbon atoms.

具有不具極性基之脂環烴構造,不顯示酸分解性之重複單元之含有率係相對於樹脂(A)中之全部重複單元以0至40莫耳%為佳,更佳為0至20莫耳%。The alicyclic hydrocarbon structure having no polar group, and the content of the repeating unit which does not exhibit acid decomposition property is preferably 0 to 40 mol%, more preferably 0 to 20 mol% based on all the repeating units in the resin (A). ear%.

於下舉出具有不具極性基之脂環烴構造、不顯示酸分解性之重複單元之具體例,但本發明係不被限定於此等。式中,Ra係表示H、CH3 、CH2 OH、或CF3Specific examples of the repeating unit having an alicyclic hydrocarbon structure having no polar group and exhibiting no acid decomposition property are listed below, but the present invention is not limited thereto. In the formula, the Ra system represents H, CH 3 , CH 2 OH, or CF 3 .

用於本發明之感光化射線性或感放射線性樹脂組成物之樹脂係除了上述之重複構造單元以外,因調節乾蝕刻耐性或標準顯影液適性、基板密著性、光阻輪廓、進一步為光阻之一般需要之特性的解像力、耐熱性、感度等之目的可具有各種之重複構造單元。The resin used in the sensitizing ray-sensitive or radiation-sensitive resin composition of the present invention is adjusted for dry etching resistance or standard developer suitability, substrate adhesion, photoresist profile, and further light in addition to the above-described repetitive structure unit. The resolving power, heat resistance, sensitivity, etc., which are generally required for the resistance, may have various repetitive structural units.

以如此之重複構造單元而言,可舉出相當於下述之單體之重複構造單元,但不為限定於此者。In the case of such a repeating structural unit, a repeating structural unit corresponding to the following monomer may be mentioned, but it is not limited thereto.

藉此,可微調整用於本發明之感光化射線性或感放射線性樹脂組成物之樹脂所被要求之性能,尤其是(1)對塗布溶劑之溶解性、(2)製膜性(玻璃轉移點)、(3)鹼顯影性、(4)膜削薄(親疏水性、鹼可溶性基選擇)、(5)對未曝光部之基板之密著性、(6)乾蝕刻耐性等。Thereby, the properties required for the resin used for the sensitizing ray-sensitive or radiation-sensitive resin composition of the present invention can be finely adjusted, in particular, (1) solubility in a coating solvent, and (2) film forming property (glass) Transfer point), (3) alkali developability, (4) film thinning (hydrophobicity, alkali-soluble base selection), (5) adhesion to a substrate of an unexposed portion, (6) dry etching resistance, and the like.

作為如此之單體,可舉出從例如丙烯酸酯類、甲基丙烯酸酯類、丙烯醯胺類、甲基丙烯醯胺類、烯丙基化合物、乙烯基醚類、乙烯酯類等選出之具有1個加成聚合性不飽和鍵之化合物等。Examples of such a monomer include those selected from the group consisting of acrylates, methacrylates, acrylamides, methacrylamides, allyl compounds, vinyl ethers, vinyl esters, and the like. One compound which adds a polymerizable unsaturated bond, etc.

於其他,只要為可與相當於上述各種之重複構造單元之單體共聚合的加成聚合性之不飽和化合物,亦可被共聚合。Other than the addition polymerizable unsaturated compound copolymerizable with the monomer corresponding to the above various repeating structural units, it may be copolymerized.

用於本發明之感光化射線性或感放射線性樹脂組成物之樹脂(A)中,各重複構造單元之含有莫耳比係為了調節光阻之乾蝕刻耐性或標準顯影液適性、基板密著性、光阻輪廓、進一步為光阻之一般需要之性能的解像力、耐熱性、感度等而適當地設定。In the resin (A) used in the sensitizing ray-sensitive or radiation-sensitive resin composition of the present invention, each of the repeating structural units contains a molar ratio in order to adjust the dry etching resistance of the photoresist or the standard developer suitability, substrate adhesion The properties, the resist profile, and the resolution, heat resistance, sensitivity, and the like of the performance required for the general resistance of the photoresist are appropriately set.

本發明之感光化射線性或感放射線性樹脂組成物為ArF曝光用時,從對ArF光之透明性之觀點來看較佳為用於本發明之感光化射線性或感放射線性樹脂組成物之樹脂(A)係不具芳香族基。When the sensitizing ray-sensitive or radiation-sensitive resin composition of the present invention is used for ArF exposure, it is preferably used for the sensitizing ray-sensitive or radiation-sensitive resin composition of the present invention from the viewpoint of transparency to ArF light. The resin (A) does not have an aromatic group.

又,樹脂(A)係,從與後述之疏水性樹脂(C)之相溶性之觀點來看較佳為不含氟原子及矽原子。Further, the resin (A) is preferably a fluorine-free atom or a ruthenium atom from the viewpoint of compatibility with a hydrophobic resin (C) to be described later.

用於本發明之感光化射線性或感放射線性樹脂組成物之樹脂(A)係較佳為全部重複單元為由(甲基)丙烯酸系重複單元構成者。此情況,亦可使用全部重複單元為甲基丙烯酸系重複單元者、全部重複單元為丙烯酸系重複單元者、全部重複單元為甲基丙烯酸系重複單元與丙烯酸系重複單元而成者之任一者,但較佳為丙烯酸系重複單元為全部重複單元之50莫耳%以下。The resin (A) used in the sensitizing ray-sensitive or radiation-sensitive resin composition of the present invention is preferably one in which all repeating units are composed of (meth)acrylic repeating units. In this case, any of the repeating units may be a methacrylic repeating unit, all of the repeating units may be an acrylic repeating unit, and all of the repeating units may be a methacrylic repeating unit and an acrylic repeating unit. However, it is preferred that the acrylic repeating unit be 50 mol% or less of all repeating units.

又,較佳為具有酸分解性基之(甲基)丙烯酸系重複單元20至50莫耳%、具有內酯基之(甲基)丙烯酸系重複單元20至50莫耳%、經羥基或氰基取代之具有脂環烴構造之(甲基)丙烯酸系重複單元5至30莫耳%、進一步含0至20莫耳%其他之(甲基)丙烯酸系重複單元之共聚物。Further, it is preferably 20 to 50 mol% of a (meth)acrylic repeating unit having an acid-decomposable group, 20 to 50 mol% of a (meth)acrylic repeating unit having a lactone group, and a hydroxyl group or a cyanide group. A copolymer of 5 to 30 mol% of a (meth)acrylic repeating unit having an alicyclic hydrocarbon structure, further containing 0 to 20 mol% of other (meth)acrylic repeating units.

本發明之樹脂(A)係可根據習知方法(例如自由基聚合)進行合成。例如,以一般的合成方法而言,可舉出將單體物種及起始劑溶解於溶劑、藉由加熱進行聚合之一倂聚合法,於加熱溶劑以1至10小時滴加單體物種與起始劑之溶液之滴入聚合法等,較佳為滴入聚合法。以反應溶劑而言,可舉出例如四氫呋喃、1,4-二烷、二異丙醚等之醚類或甲基乙基酮、甲基異丁基酮之類的酮類、乙酸乙酯之類的酯溶劑、二甲基甲醯胺、二甲基乙醯胺等之醯胺溶劑、進一步後述之丙二醇單甲基醚乙酸酯、丙二醇單甲基醚、環己酮之類的溶解本發明之組成物之溶劑。與更佳為使用與用於本發明之組成物之溶劑同樣的溶劑來聚合。藉此,可抑制保存時之粒子之產生。The resin (A) of the present invention can be synthesized according to a conventional method (for example, radical polymerization). For example, in a general synthesis method, a monomer species and an initiator are dissolved in a solvent, and polymerization is carried out by heating, and the monomer species is added dropwise in 1 to 10 hours in a heating solvent. The solution of the initiator is dropped into a polymerization method or the like, and is preferably a dropping polymerization method. The reaction solvent may, for example, be tetrahydrofuran or 1,4-di An ether such as an alkane or a diisopropyl ether; a ketone such as methyl ethyl ketone or methyl isobutyl ketone; an ester solvent such as ethyl acetate; dimethylformamide or dimethylacetonitrile; A solvent for dissolving the composition of the present invention, such as a guanamine solvent such as an amine, further propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether or cyclohexanone described later. It is more preferably polymerized by using the same solvent as the solvent used in the composition of the present invention. Thereby, generation of particles during storage can be suppressed.

聚合反應係較佳為在氮或氬等惰性氣體環境下進行。以聚合起始劑而言使用市售之自由基起始劑(偶氮系起始劑、過氧化物等)來使聚合開始。以自由基起始劑而言較佳為偶氮系起始劑,具有酯基、氰基、羧基之偶氮系起始劑為較佳。以較佳之起始劑而言,可舉出偶氮雙異丁腈基、偶氮雙二甲基戊腈基、二甲基2,2‘-偶氮雙(2-甲基丙酸酯)等。依照希望追加,或是分次添加起始劑,反應結束後、投入溶劑以粉狀或是固體回收等方法回收所要的聚合物。反應之濃度係為5至50質量%,較佳為10至30質量%。反應溫度係通常為10℃至150℃,較佳為30℃至120℃,進一步較佳為60至100℃。The polymerization reaction is preferably carried out under an inert gas atmosphere such as nitrogen or argon. A polymerization initiator is used to start polymerization by using a commercially available radical initiator (azo initiator, peroxide, etc.). The radical initiator is preferably an azo initiator, and an azo initiator having an ester group, a cyano group or a carboxyl group is preferred. Preferred examples of the initiator include azobisisobutyronitrile group, azobisdimethylvaleronitrile group, dimethyl 2,2'-azobis(2-methylpropionate), and the like. The desired polymer is added as needed, or the starting agent is added in portions, and after completion of the reaction, the solvent is charged in a powder form or solid recovery. The concentration of the reaction is from 5 to 50% by mass, preferably from 10 to 30% by mass. The reaction temperature is usually from 10 ° C to 150 ° C, preferably from 30 ° C to 120 ° C, further preferably from 60 to 100 ° C.

本發明之樹脂(A)之重量平均分子量係,以藉由GPC法之聚苯乙烯換算值較佳為1,000至200,000,更佳為2,000至20,000,進一步更佳為3,000至15,000,特佳為3,000至10,000。藉由使重量平均分子量為上述範圍,可提升耐熱性或防止乾蝕刻耐性之劣化,可防止顯影性之劣化、因高黏度化之製膜性之劣化等。The weight average molecular weight of the resin (A) of the present invention is preferably from 1,000 to 200,000, more preferably from 2,000 to 20,000, still more preferably from 3,000 to 15,000, even more preferably from 3,000 to 3,000 in terms of polystyrene by the GPC method. To 10,000. When the weight average molecular weight is in the above range, heat resistance can be improved or dry etching resistance can be prevented from deteriorating, deterioration of developability, deterioration of film forming property due to high viscosity, and the like can be prevented.

分散度(分子量分布)係使用通常為1至3,較佳為1至2.6,再更佳為1至2,特佳為1.4至2.0之範圍者。分子量分布越小者,解像度、光阻形狀優越、且光阻圖案之側壁為平滑、粗糙性優越。The degree of dispersion (molecular weight distribution) is usually in the range of from 1 to 3, preferably from 1 to 2.6, still more preferably from 1 to 2, particularly preferably from 1.4 to 2.0. The smaller the molecular weight distribution, the superior the resolution and the shape of the photoresist, and the side walls of the photoresist pattern are smooth and excellent in roughness.

本發明之感光化射線性或感放射線性樹脂組成物之樹脂(A)之組成物全體中之調配量係較佳為總固體成分中50至80質量%,更佳為60至80質量%。The amount of the composition of the resin (A) of the photosensitive ray-sensitive or radiation-sensitive resin composition of the present invention is preferably from 50 to 80% by mass, more preferably from 60 to 80% by mass, based on the total solid content.

又,本發明之樹脂(A)係可以1種來使用,亦可倂用多種。Further, the resin (A) of the present invention may be used alone or in combination of two or more.

[3]氟原子及矽原子之至少一者與具有藉由鹼顯影液之作用分解並增大對鹼顯影液之溶解性的極性變換基的樹脂[3] at least one of a fluorine atom and a ruthenium atom and a resin having a polar conversion group which decomposes by an action of an alkali developer and increases solubility in an alkali developer

本發明之感光化射線或感放射線樹脂組成物係含有具有至少一個極性變換基的重複單元(c),且含有具有氟原子及矽原子之至少一者的樹脂(C)。樹脂(C)係具有疏水性者,但樹脂(C)之添加係尤其在減低顯影缺陷之點較佳。The photosensitive ray or radiation-sensitive resin composition of the present invention contains a repeating unit (c) having at least one polar group and contains a resin (C) having at least one of a fluorine atom and a ruthenium atom. The resin (C) is hydrophobic, but the addition of the resin (C) is particularly preferable at the point of reducing development defects.

在此,所謂極性變換基係藉由鹼顯影液之作用分解並增大在鹼顯影液中之溶解度的基。舉出例如內酯基、羧酸酯基(-COO-)、酸酐基(-C(O)OC(O)-)、酸醯亞胺基(-NHCONH-)、羧酸硫酯基(-COS-)、碳酸酯基(-OC(O)O-)、硫酸酯基(-OSO2 O-)、磺酸酯基(-SO2 O-)等。Here, the polar conversion group is a group which decomposes by the action of an alkali developing solution and increases the solubility in the alkali developing solution. For example, a lactone group, a carboxylate group (-COO-), an acid anhydride group (-C(O)OC(O)-), an acid sulfoximine group (-NHCONH-), a carboxylic acid thioester group (- COS-), carbonate group (-OC(O)O-), sulfate group (-OSO 2 O-), sulfonate group (-SO 2 O-), and the like.

另外,如在丙烯酸酯等中之直接鍵結於重複單元之主鏈的酯基係因藉由鹼顯影液之作用分解並增大對鹼顯影液之溶解性的機能為差之故,在本發明中不含於極性變換基。Further, in the acrylate or the like, the ester group directly bonded to the main chain of the repeating unit is poor in the function of decomposing by the action of the alkali developing solution and increasing the solubility in the alkali developing solution. The invention does not contain a polar transducer.

作為重複單元(c),可舉出例如由式(K0)表示之重複單元。The repeating unit (c) may, for example, be a repeating unit represented by the formula (K0).

式中,Rk1 係表示氫原子、鹵素原子、羥基、烷基、環烷基、芳基或含極性變換基的基。In the formula, R k1 represents a hydrogen atom, a halogen atom, a hydroxyl group, an alkyl group, a cycloalkyl group, an aryl group or a group containing a polar group.

Rk2 係表示烷基、環烷基、芳基或含極性變換基的基。R k2 represents an alkyl group, a cycloalkyl group, an aryl group or a group containing a polar group.

但是Rk1 、Rk2 之至少一方係具有極性變換基。However, at least one of R k1 and R k2 has a polar conversion group.

另外,於通式(K0)表示之直接鍵結於重複單元之主鏈的酯基係如前所述不含於本發明中之極性變換基。Further, the ester group which is directly bonded to the main chain of the repeating unit represented by the formula (K0) is not included in the polar group in the present invention as described above.

以極性變換基而言,較佳為由通式(KA-1)或(KB-1)表示之部分構造中之由X表示的基。The polar conversion group is preferably a group represented by X in a partial structure represented by the general formula (KA-1) or (KB-1).

通式(KA-1)或(KB-1)中之X係表示羧酸酯基:-COO-、酸酐基:-C(O)OC(O)-、酸醯亞胺基:-NHCONH-、羧酸硫酯基:-COS-、碳酸酯基:-OC(O)O-、硫酸酯基:-OSO2 O-、磺酸酯基:-SO2 O-。X in the formula (KA-1) or (KB-1) represents a carboxylate group: -COO-, an acid anhydride group: -C(O)OC(O)-, a hydrazide imine group: -NHCONH- Carboxylic acid ester group: -COS-, carbonate group: -OC(O)O-, sulfate group: -OSO 2 O-, sulfonate group: -SO 2 O-.

Y1 及Y2 係各自可相同亦可不同,表示吸電子基。Each of Y 1 and Y 2 may be the same or different and represents an electron withdrawing group.

另外,因重複單元(c)係有具有由通式(KA-1)或(KB-1)表示之部分構造的基,具有較佳之極性變換基,但由通式(KA-1)表示之部分構造,如同Y1 及Y2 為1價情況之由(KB-1)表示之部分構造之情況一般的該部分構造不具有連接鍵之情況係,所謂具有該部分構造之基為具有除去了該部分構造中之至少一個任意之氫原子的1價以上之基的基。由通式(KA-1)或(KB-1)表示之部分構造係在任意之位置經由取代基連結至樹脂(C)之主鏈。Further, since the repeating unit (c) has a group having a partial structure represented by the general formula (KA-1) or (KB-1), it has a preferred polar conversion group, but is represented by the general formula (KA-1). Partial structure, as in the case where Y 1 and Y 2 are part of the structure represented by the case of monovalent (KB-1), the part of the structure generally has no connection bond, and the basis of the structure having the partial structure is removed. A group having a monovalent or higher group of at least one arbitrary hydrogen atom in the partial structure. A partial structure represented by the general formula (KA-1) or (KB-1) is bonded to the main chain of the resin (C) via a substituent at an arbitrary position.

由通式(KA-1)表示之部分構造係與作為X之基一起形成環構造的構造。The partial structure represented by the general formula (KA-1) forms a structure of a ring structure together with the group of X.

作為通式(KA-1)中之X較佳為羧酸酯基(亦即,作為KA-1形成內酯環構造之情況)、及酸酐基、碳酸酯基。更佳為羧酸酯基。X in the general formula (KA-1) is preferably a carboxylate group (that is, a case where KA-1 forms a lactone ring structure), and an acid anhydride group or a carbonate group. More preferably, it is a carboxylate group.

通式(KA-1)由表示環構造係亦可具有取代基,例如亦可具有nka個取代基Zka1The general formula (KA-1) may have a substituent from the ring structure, and may have, for example, nka substituents Z ka1 .

Zka1 有多個的情況,其係各自獨立表示烷基、環烷基、醚基、羥基、醯胺基、芳基、內酯環基、或吸電子基。There are a plurality of cases of Z ka1 each independently representing an alkyl group, a cycloalkyl group, an ether group, a hydroxyl group, a decylamino group, an aryl group, a lactone ring group, or an electron withdrawing group.

Zka1 亦可彼此鍵結形成環。以Zka1 彼此鍵結形成之環而言,可舉出例如環烷環、雜環(環狀醚環、內酯環等)。Z ka1 may also be bonded to each other to form a ring. Examples of the ring formed by bonding Z ka1 to each other include a cycloalkane ring and a hetero ring (a cyclic ether ring, a lactone ring, etc.).

nka係表示0至10之整數。較佳為0至8之整數,更佳為0至5之整數,進一步較佳為1至4之整數,最佳為1至3之整數。The nka system represents an integer of 0 to 10. It is preferably an integer of 0 to 8, more preferably an integer of 0 to 5, further preferably an integer of 1 to 4, and most preferably an integer of 1 to 3.

作為Zkal 之吸電子基係與後述之作為Y1 及Y2 之吸電子基相同。The electron-withdrawing group of Z kal is the same as the electron-withdrawing group of Y 1 and Y 2 described later.

另外,上述吸電子基係,亦可被別的吸電子基取代。Further, the above electron withdrawing group may be substituted by another electron withdrawing group.

Zkal 係較佳為烷基、環烷基、醚基、羥基、或吸電子基,更佳為烷基、環烷基或吸電子基。另外,以醚基而言,以經烷基或環烷基等取代者,亦即烷醚基等較佳。吸電子基係與前述同義。Z kal is preferably an alkyl group, a cycloalkyl group, an ether group, a hydroxyl group, or an electron withdrawing group, more preferably an alkyl group, a cycloalkyl group or an electron withdrawing group. Further, in the case of an ether group, those substituted with an alkyl group or a cycloalkyl group, that is, an alkyl ether group or the like are preferred. The electron withdrawing system is synonymous with the foregoing.

作為Zkal 之鹵素原子係舉出氟原子、氯原子、溴原子及碘原子等,以氟原子較佳。The halogen atom of Z kal is preferably a fluorine atom, a chlorine atom, a bromine atom or an iodine atom, and the fluorine atom is preferred.

作為Zkal 之烷基係亦可具有取代基,可為直鏈、分枝之任一者。以直鏈烷基而言,較佳為碳數1至30,進一步較佳為1至20,可舉出例如甲基、乙基、正丙基、正丁基、二級丁基、三級丁基、正戊基、正己基、正庚基、正辛基、正壬基、正癸基等。以分枝烷基而言,較佳為碳數3至30,進一步較佳為3至20,可舉出例如異丙基、異丁基、三級丁基、異戊基、三級戊基、異己基、三級己基、異庚基、三級庚基、異辛基、三級辛基、異壬基、三級癸醯基等。較佳為甲基、乙基、正丙基、異丙基、正丁基、異丁基、三級丁基等之碳數1至4之者。The alkyl group which is Z kal may have a substituent, and may be either a straight chain or a branch. The linear alkyl group is preferably a carbon number of 1 to 30, more preferably 1 to 20, and examples thereof include a methyl group, an ethyl group, a n-propyl group, a n-butyl group, a secondary butyl group, and a tertiary group. Butyl, n-pentyl, n-hexyl, n-heptyl, n-octyl, n-decyl, n-decyl and the like. The branched alkyl group is preferably a carbon number of 3 to 30, further preferably 3 to 20, and examples thereof include an isopropyl group, an isobutyl group, a tertiary butyl group, an isopentyl group, and a tertiary pentyl group. , isohexyl, tertiary hexyl, isoheptyl, tertiary heptyl, isooctyl, tertiary octyl, isodecyl, tertiary sulfhydryl, and the like. It is preferably a carbon number of 1 to 4 such as a methyl group, an ethyl group, a n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group or a tertiary butyl group.

作為Zkal 之環烷基係亦可具有取代基,可為單環型,亦可為多環型,亦可為橋聯式。例如環烷基係亦可具有交聯構造。以單環型而言,以碳數3至8之環烷基為佳,可舉出例如環丙基、環戊基、環己基、環丁基、環辛基等。以多環型而言,可舉出具有碳數5以上之雙環、三環、四環構造等的基,以碳數6至20之環烷基為佳,可舉出例如金剛烷基、降莰基、異莰基、樟腦基、二環戊基、α-蒎烯基、三環癸基、四環十二烷基、雄甾烷基或是下述構造等。另外,環烷基中之碳原子之一部分亦可經氧原子等之雜原子取代。The cycloalkyl group of Z kal may have a substituent, and may be a monocyclic type, a polycyclic type, or a bridged type. For example, a cycloalkyl group may have a crosslinked structure. The monocyclic type is preferably a cycloalkyl group having 3 to 8 carbon atoms, and examples thereof include a cyclopropyl group, a cyclopentyl group, a cyclohexyl group, a cyclobutyl group, a cyclooctyl group and the like. The polycyclic type may be a group having a bicyclic ring, a tricyclic ring or a tetracyclic structure having a carbon number of 5 or more, and preferably a cycloalkyl group having 6 to 20 carbon atoms, and examples thereof include adamantyl group and a lower alkyl group. Indenyl, isodecyl, camphoryl, dicyclopentyl, α-decenyl, tricyclodecyl, tetracyclododecyl, androstanyl or the like. Further, a part of the carbon atom in the cycloalkyl group may be substituted with a hetero atom such as an oxygen atom.

以上述脂環部分之較佳者而言,可舉出金剛烷基、降金剛烷基、十氫萘基、三環癸基、四環十二烷基、降莰基、雪松醇基、環己基、環庚基、環辛基、環癸基、環十二烷基。更佳為金剛烷基、十氫萘基、降莰基、雪松醇基、環己基、環庚基、環辛基、環癸基、環十二烷基、三環癸基。Preferred examples of the above alicyclic moiety include adamantyl, noradamantyl, decahydronaphthyl, tricyclodecyl, tetracyclododecyl, norbornyl, cedar, and ring. Hexyl, cycloheptyl, cyclooctyl, cyclodecyl, cyclododecyl. More preferred are adamantyl, decahydronaphthyl, norbornyl, cedarol, cyclohexyl, cycloheptyl, cyclooctyl, cyclodecyl, cyclododecyl, tricyclodecyl.

以此等之脂環式構造之取代基而言,可舉出烷基、鹵素原子、羥基、烷氧基、羧基、烷氧基羰基。以烷基而言以甲基、乙基、丙基、異丙基、丁基等之低級烷基為佳,再更佳為表示甲基、乙基、丙基、異丙基。以上述烷氧基而言,可舉出較佳為甲氧基、乙氧基、丙氧基、丁氧基等之碳數1至4者。以烷基及烷氧基亦可具有之取代基而言,可舉出羥基、鹵素原子、烷氧基(較佳為碳數1至4)等。Examples of the substituent of the alicyclic structure include an alkyl group, a halogen atom, a hydroxyl group, an alkoxy group, a carboxyl group, and an alkoxycarbonyl group. The alkyl group is preferably a lower alkyl group such as a methyl group, an ethyl group, a propyl group, an isopropyl group or a butyl group, and more preferably a methyl group, an ethyl group, a propyl group or an isopropyl group. The alkoxy group is preferably a carbon number of 1 to 4 such as a methoxy group, an ethoxy group, a propoxy group or a butoxy group. Examples of the substituent which the alkyl group and the alkoxy group may have include a hydroxyl group, a halogen atom, an alkoxy group (preferably, a carbon number of 1 to 4).

又,以上述基亦可具有之進一步取代基而言,可舉出羥基、鹵素原子(氟、氯、溴、碘)、硝基、氰基,上述之烷基可舉出甲氧基、乙氧基、羥乙氧基、丙氧基、羥丙氧基、正丁氧基、異丁氧基、二級丁氧基、三級丁氧基等之烷氧基、甲氧基羰基、乙氧基羰基等之烷氧基羰基、苄基、苯乙基、基等之芳烷基、芳烷基氧基、甲醯基、乙醯基、丁醯基、苯甲醯基、桂皮醯(cyanamyl)基、戊醯基等之醯基、丁醯氧基等之醯氧基,上述之烯基可舉出乙烯基氧基、丙烯氧基、烯丙氧基、丁烯氧基等之烯氧基,上述之芳基可舉出苯氧基等之芳氧基、苯甲醯氧基等之芳氧基羰基等。Further, examples of the further substituent which the above-mentioned group may have include a hydroxyl group, a halogen atom (fluorine, chlorine, bromine, iodine), a nitro group, and a cyano group, and the above alkyl group may be a methoxy group or a Alkoxy groups such as oxy, hydroxyethoxy, propoxy, hydroxypropoxy, n-butoxy, isobutoxy, ternary butoxy, tert-butoxy, etc., methoxycarbonyl, B Alkoxycarbonyl group such as oxycarbonyl group, benzyl group, phenethyl group, An aryl group, an aralkyloxy group, a decyl group, an ethyl fluorenyl group, a butyl group, a benzyl group, a cyanomyl group, a fluorenyl group such as a pentyl group, a butyl group, etc. The oxy group, the alkenyl group described above may be an alkenyloxy group such as a vinyloxy group, a propyleneoxy group, an allyloxy group or a butenyloxy group, and the aryl group may be an aryloxy group such as a phenoxy group. An aryloxycarbonyl group such as a benzamidine group or the like.

通式(KA-1)中之X為羧酸酯基,通式(KA-1)所表示之部分構造較佳為內酯環,較佳為5至7員環之內酯環。X in the formula (KA-1) is a carboxylate group, and a part of the structure represented by the formula (KA-1) is preferably a lactone ring, preferably a 5- to 7-membered lactone ring.

另外,如下述(KA-1-1)至(KA-1-17)中一般,於作為由通式(KA-1)表示之部分構造之5至7員環內酯環較佳以形成雙環構造、螺構造的形式縮環其他的環構造。Further, as in the following (KA-1-1) to (KA-1-17), a 5- to 7-membered ring lactone ring which is a part represented by the formula (KA-1) is preferably used to form a double ring. The structure, the form of the spiral structure shrinks the ring structure.

對於由通式(KA-1)表示之環構造亦可結合之週邊的環構造係可舉出例如下述(KA-1-1)至(KA-1-17)中之者,或按照此之者。The ring structure which can be bonded to the ring structure represented by the general formula (KA-1) is, for example, the following (KA-1-1) to (KA-1-17), or Those.

作為含有通式(KA-1)所表示之內酯環構造的構造,以由下述(KA-1-1)至(KA-1-17)之任一者表示之構造為更佳。另外,內酯構造亦可直接結合於主鏈。以較佳之構造而言,為(KA-1-1)、(KA-1-4)、(KA-1-5)、(KA-1-6)、(KA-1-13)、(KA-1-14)、(KA-1-17)。The structure including the lactone ring structure represented by the general formula (KA-1) is more preferably a structure represented by any one of the following (KA-1-1) to (KA-1-17). In addition, the lactone structure can also be directly bonded to the main chain. In a preferred configuration, (KA-1-1), (KA-1-4), (KA-1-5), (KA-1-6), (KA-1-13), (KA -1-14), (KA-1-17).

上述含有內酯環構造的構造係亦可具有取代基亦可不具有。以較佳之取代基而言,可舉出與上述通式(KA-1)所表示之環構造亦可具有之取代基同樣者。The structure containing the lactone ring structure may or may not have a substituent. The preferred substituent is the same as the substituent which the ring structure represented by the above formula (KA-1) may have.

內酯構造係亦存在有光學異構物者,但亦可使用任一之光學異構物。又,亦可單獨使用1種光學異構物,亦可混合使用多種光學異構物。主要使用1種光學異構物的情況,以其光學純度(對映體過量值)(ee)為90以上之者較佳,更佳為95以上,最佳為98以上。The lactone structure also has optical isomers, but any optical isomer may also be used. Further, one type of optical isomer may be used alone or a plurality of optical isomers may be used in combination. When one type of optical isomer is mainly used, the optical purity (enantiomeric excess value) (ee) is preferably 90 or more, more preferably 95 or more, and most preferably 98 or more.

作為通式(KB-1)之X可舉出較佳為羧酸酯基(-COO-)。The X of the formula (KB-1) is preferably a carboxylate group (-COO-).

通式(KB-1)中之Y1 及Y2 係各自獨立地表示吸電子基。Y 1 and Y 2 in the formula (KB-1) each independently represent an electron withdrawing group.

吸電子基係由下述式(EW)表示之部分構造。式(EW)中之*係表示直接鍵結於(KA-1)之連接鍵、或直接鍵結於(KB-1)中之X之連接鍵。The electron withdrawing system is constructed by a part represented by the following formula (EW). The * in the formula (EW) indicates a linkage key directly bonded to (KA-1) or a linkage key directly bonded to X in (KB-1).

式(EW)中,new 係由-C(Rew1 )(Rew2 )-表示之連結基之重複數,表示0或1之整數。new 為0之情況係表示單鍵,表示直接鍵結Yew1In the formula (EW), n ew is a repeating number of a linking group represented by -C(R ew1 )(R ew2 )-, and represents an integer of 0 or 1. The case where n ew is 0 indicates a single bond, indicating a direct bond Y ew1 .

Yew1 係可舉出鹵素原子、氰基、腈基、硝基、由-C(Rf1 )(Rf2 )-Rf3 表示之鹵(環)烷基、鹵芳基、氧基、羰基、磺醯基、亞磺醯基、及此等之組合,吸電子基係亦可為例如下述構造。另外,所謂「鹵(環)烷基」表示至少一部分經鹵化之烷基及環烷基。Rew3 、Rew4 係各自獨立地表示任意之構造。不論Rew3 、Rew4 係何種構造,由式(EW)表示之部分構造係具有電子吸引性,亦可鍵結於例如樹脂之主鏈,但較佳為烷基、環烷基、氟化烷基。 Examples of Y ew1 include a halogen atom, a cyano group, a nitrile group, a nitro group, a halogen (cyclo)alkyl group represented by —C(R f1 )(R f2 )—R f3 , a halogenoaryl group, an oxy group, a carbonyl group, The sulfonyl group, the sulfinyl group, and combinations thereof may be, for example, the following structures. Further, the "halo (cyclo)alkyl group" means at least a part of a halogenated alkyl group and a cycloalkyl group. R ew3 and R ew4 each independently represent an arbitrary structure. Regardless of the structure of R ew3 or R ew4 , a part of the structure represented by the formula (EW) has an electron attracting property, and may be bonded to, for example, a main chain of a resin, but is preferably an alkyl group, a cycloalkyl group, or a fluorinated group. alkyl.

Yew1 為2價以上之基的情況,其餘連接鍵係與任意之原子或取代基形成鍵結者。Yew1 、Rew1 、Rew2 之至少幾個基亦可為經由進一步取代基而連結於樹脂(C)之主鏈。When Y ew1 is a group having two or more valences, the remaining linking bonds form a bond with any atom or substituent. At least several groups of Y ew1 , R ew1 , and R ew2 may be linked to the main chain of the resin (C) via a further substituent.

Yew1 係較佳為鹵素原子,或由-C(Rf1 )(Rf2 )-Rf3 表示之鹵(環)烷基或鹵芳基。Y ew1 is preferably a halogen atom or a halogen (cyclo)alkyl group or a halogen aryl group represented by -C(R f1 )(R f2 )-R f3 .

Rew1 、Rew2 各自獨立地表示任意之取代基,表示例如氫原子、烷基、環烷基或芳基。R ew1 and R ew2 each independently represent an arbitrary substituent and represent, for example, a hydrogen atom, an alkyl group, a cycloalkyl group or an aryl group.

Rew1 、Rew2 及Yew1 之至少兩個亦可互相結合形成環。At least two of R ew1 , R ew2 and Y ew1 may also be combined with each other to form a ring.

在此Rf1 係表示鹵素原子、全鹵烷基、全鹵環烷基、或全鹵芳基,更佳為氟原子、全氟烷基或全氟環烷基,再更佳為表示氟原子或三氟甲基。Here, R f1 represents a halogen atom, a perhaloalkyl group, a perhalocycloalkyl group, or a perhaloaryl group, more preferably a fluorine atom, a perfluoroalkyl group or a perfluorocycloalkyl group, and even more preferably a fluorine atom. Or trifluoromethyl.

Rf2 、Rf3 係各自獨立地表示氫原子、鹵素原子或有機基,亦可與Rf2 與Rf3 鍵結形成環。以有機基而言表示例如烷基、環烷基、烷氧基等。Rf2 係表示與Rf1 同樣之基或更佳為與Rf3 連結形成環。R f2 and R f3 each independently represent a hydrogen atom, a halogen atom or an organic group, and may be bonded to R f2 and R f3 to form a ring. The organic group means, for example, an alkyl group, a cycloalkyl group, an alkoxy group or the like. R f2 represents the same group as R f1 or more preferably is bonded to R f3 to form a ring.

與Rf1 至Rf3 亦可連結形成環,以形成之環而言,可舉出(鹵)環烷環、(鹵)芳環等。R f1 to R f3 may be bonded to each other to form a ring, and examples of the ring to be formed include a (halo)cycloalkane ring and a (halogen)aryl ring.

以在Rf1 至Rf3 中之(鹵)烷基而言,可舉出例如前述Zka1 中之烷基,及此者經鹵化之構造。The (halo)alkyl group in R f1 to R f3 may, for example, be an alkyl group in the above Z ka1 and a halogenated structure.

以在Rf1 至Rf3 中,或在與Rf2 與Rf3 連結形成之環中的(全)鹵環烷基及(全)鹵芳基而言,可舉出例如前述Zka1 中之環烷基經鹵化之構造,更佳為由-C(n) F(2n-2) H表示之氟烷基,及由-C(n) F(n-1) 表示之全氟芳基。在此碳數n係無特別限定,但以5至13者為佳,6為更佳。The ( per )halocycloalkyl group and the ( per )haloaryl group in R f1 to R f3 or in the ring formed by linking R f2 to R f3 include, for example, the ring in the aforementioned Z ka1 The structure in which the alkyl group is halogenated is more preferably a fluoroalkyl group represented by -C (n) F (2n-2) H and a perfluoroaryl group represented by -C (n) F (n-1) . The carbon number n is not particularly limited, but preferably 5 to 13 and 6 is more preferable.

以Rew1 、Rew2 及Yew1 之至少兩個亦可互相連結形成之環而言,可舉出較佳為環烷基或雜環基,以雜環基而言以內酯環基較佳。以內酯環而言,可舉出例如由上述式(KA-1-1)至(KA-1-17)表示之構造。The ring formed by joining at least two of R ew1 , R ew2 and Y ew1 to each other may preferably be a cycloalkyl group or a heterocyclic group, and a heterocyclic group is preferably a lactone ring group. The lactone ring is, for example, a structure represented by the above formulas (KA-1-1) to (KA-1-17).

另外,於重複單元中(c)中,亦可具有多個由通式(KA-1)表示之部分構造,多個由通式(KB-1)表示之部分構造,或是通式(KA-1)之部分構造與通式(KB-1)之兩者。Further, in the repeating unit (c), a plurality of partial structures represented by the general formula (KA-1), a plurality of partial structures represented by the general formula (KB-1), or a general formula (KA) may be provided. Part of the structure of -1) and the formula (KB-1).

另外,通式(KA-1)之部分構造之一部分或全部亦可同時為作為通式(KB-1)中之Y1 或Y2 之吸電子基。例如通式(KA-1)之X為羧酸酯基的情況,其羧酸酯基係亦可能作用為作為通式(KB-1)中之Y1 或Y2 之吸電子基。Further, part or all of a part of the structure of the general formula (KA-1) may simultaneously be an electron withdrawing group of Y 1 or Y 2 in the formula (KB-1). For example, when X of the formula (KA-1) is a carboxylate group, the carboxylate group may also function as an electron withdrawing group of Y 1 or Y 2 in the formula (KB-1).

重複單元(c)可為於一個側鏈上與具有氟原子及矽原子之至少一者與極性變換基之重複單元(c’),亦可為具有極性變換基且沒有氟原子及矽原子之重複單元(c*),亦可為於一個側鏈上具有極性變換基且於同一重複單元內之與前述側鏈不同的側鏈上具有氟原子及矽原子之至少一者之重複單元(c”),但樹脂(C)係作為重複單元(c)更佳為具有重複單元(c’)。The repeating unit (c) may be a repeating unit (c') having at least one of a fluorine atom and a ruthenium atom and a polar conversion group on one side chain, or may have a polar conversion group and no fluorine atom or ruthenium atom. The repeating unit (c*) may also be a repeating unit having at least one of a fluorine atom and a ruthenium atom having a polar group on one side chain and having a different side chain from the side chain in the same repeating unit (c) "), but the resin (C) is preferably a repeating unit (c) having a repeating unit (c').

另外,樹脂(C)具有重複單元(c*)的情況,較佳為與具有氟原子及矽原子之至少一者之重複單元(後述的重複單元(c1))之共聚物。又,所謂重複單元(c”)中之具有極性變換基的側鏈與具有氟原子及矽原子之至少一者的側鏈,較佳為鍵結於主鏈中之同一個碳原子,亦即如下述式(4)一般的位置關係。式中,B1係表示具有極性變換基之部分構造,B2係表示具有氟原子及矽原子之至少一者之部分構造。Further, the resin (C) has a repeating unit (c*), and is preferably a copolymer with a repeating unit (repeating unit (c1) to be described later) having at least one of a fluorine atom and a ruthenium atom. Further, the side chain having a polar conversion group in the repeating unit (c") and the side chain having at least one of a fluorine atom and a ruthenium atom are preferably the same carbon atom bonded to the main chain, that is, A general positional relationship of the following formula (4): wherein B1 represents a partial structure having a polar conversion group, and B2 represents a partial structure having at least one of a fluorine atom and a germanium atom.

又,重複單元(c*)及重複單元(c”)中,極性變換基更佳為由通式(KA-1)表示之構造中之由-COO-表示之部分構造。Further, in the repeating unit (c*) and the repeating unit (c"), the polar conversion group is more preferably a structure represented by -COO- in the structure represented by the general formula (KA-1).

極性變換基為藉由鹼顯影液之作用分解並導致極性轉換,因此可降低鹼顯影後之樹脂組成物膜之與水的後退接觸角。Since the polar conversion group is decomposed by the action of the alkali developing solution and causes polarity switching, the receding contact angle with the water of the resin composition film after alkali development can be reduced.

鹼顯影後之樹脂組成物膜之與水的後退接觸角係在曝光時之溫度、一般室溫23±3℃、濕度45±5%中以50°以下為佳,更佳為40°以下,進一步較佳為35°以下,最佳為30°以下。The receding contact angle of the resin composition film after alkali development with water is preferably 30±3° C. in a room temperature, 23±3° C. in a room temperature, and 45° or less in a humidity of 45±5%, more preferably 40° or less. It is further preferably 35 or less, and most preferably 30 or less.

所謂後退接觸角,係於液滴-基板界面之接觸線後退之際所測定的接觸角,一般習知為在模擬動態之液滴之易移動度時為有用。簡單地說,可定義作為從針端吐出之液滴,使其滴到基板上後,再度吸入其液滴至針時的液滴之界面後退時的接觸角,一般可使用稱為擴張收縮法的接觸角之測定方法來進行測定。The receding contact angle is a contact angle measured when the contact line of the droplet-substrate interface retreats, and is generally useful for simulating the dynamic mobility of droplets. Briefly, it can be defined as the contact angle when the droplets ejected from the needle end are dropped onto the substrate and then the droplets are reabsorbed to the needle when the interface of the droplets retreats. The measurement method of the contact angle is performed.

樹脂(C)之對鹼顯影液的水解速度係較佳為0.001nm/sec以上,更佳為0.01nm/sec以上,進一步較佳為0.1nm/sec以上,最佳為1nm/sec以上。The hydrolysis rate of the alkali developer to the resin (C) is preferably 0.001 nm/sec or more, more preferably 0.01 nm/sec or more, further preferably 0.1 nm/sec or more, and most preferably 1 nm/sec or more.

在此樹脂(C)之對鹼顯影液之水解速度係為對23℃之TMAH(氫氧化四甲基銨水溶液)(2.38質量%)僅以樹脂(C)製膜為樹脂膜時之膜厚減少的速度。The rate of hydrolysis of the alkali developer to the resin (C) is a film thickness of TMAH (tetramethylammonium hydroxide aqueous solution) (2.38 mass%) at 23 ° C, when the resin (C) is formed into a resin film. Reduced speed.

本發明之樹脂(C)係含有具有至少兩個以上之極性變換基的重複單元(c),且較佳為具有氟原子及矽原子之至少一者的樹脂(C1)。The resin (C) of the present invention contains a repeating unit (c) having at least two or more polar converting groups, and is preferably a resin (C1) having at least one of a fluorine atom and a ruthenium atom.

重複單元(c)具有至少兩個極性變化基的情況,較佳為具有由下述通式(KY-1)表示的有具有兩個極性變化基之部分構造的基。另外,由通式(KY-1)表示之構造不具有連接鍵的情況係具有除去了該構造中之至少一個任意之氫原子的1價以上之基的基。In the case where the repeating unit (c) has at least two polar groups, it is preferred to have a group having a partial structure having two polar groups represented by the following formula (KY-1). Further, the structure represented by the general formula (KY-1) does not have a linking bond, and is a group having a monovalent or higher group in which at least one arbitrary hydrogen atom in the structure is removed.

通式(KY-1)中,Rky1 、Rky4 係各自獨立地表示氫原子、鹵素原子、烷基、環烷基、羰基、羰基氧基、氧基羰基、醚基、羥基、氰基、醯胺基、或芳基。或、Rky1 、Rky4 亦可為與同一原子鍵結形成雙鍵,例如Rky1 、Rky4 亦可為與同一氧原子鍵結形成羰基之一部分(=O)。General formula (KY-1) in a, R ky1, R ky4 lines each independently represent a hydrogen atom, a halogen atom, alkyl, cycloalkyl, carbonyl group, carbonyloxy group, oxycarbonyl group, an ether group, a hydroxyl group, a cyano group, Amidino or aryl. Or, R ky1, R ky4 junction may form a double bond to the same atom, for example R ky1, R ky4 junction may also be part of the same oxygen atom of a carbonyl group (= O) is formed.

Rky2 、Rky3 係各自獨立為吸電子基、或與Rky1 與Rky2 連結形成內酯環的同時Rky3 為吸電子基。以形成之內酯環而言,較佳為前述(KA-1-1)至(KA-1-17)之構造。以吸電子基而言,可舉出與前述式(KB-1)中之Y1 、Y2 同樣者,較佳為鹵素原子,或由-C(Rf1 )(Rf2 )-Rf3 表示的鹵(環)烷基或鹵芳基。較佳為Rky3 為鹵素原子或由-C(Rf1 )(Rf2 )-Rf3 表示的鹵(環)烷基或鹵芳基、Rky2 與Rky1 連結形成內酯環、或不具有鹵素原子的吸電子基。 R ky2, R ky3 lines each independently an electron-withdrawing, or R ky1 and R ky2 linked to form a lactone ring, while R ky3 electron withdrawing group. The lactone ring formed is preferably a structure of the above (KA-1-1) to (KA-1-17). The electron-withdrawing group is the same as Y 1 and Y 2 in the above formula (KB-1), preferably a halogen atom, or represented by -C(R f1 )(R f2 )-R f3 Halogen (cyclo)alkyl or haloaryl. R ky3 is preferably a halogen atom or a halo (cyclo) f3 represents an alkyl group or an aryl halide group, R ky2 and R ky1 are connected by -C (R f1) (R f2 ) -R form a lactone ring, with or without An electron withdrawing group of a halogen atom.

Rky1 、Rky2 、Rky4 係亦可各者彼此連結形成單環或多環構造。 R ky1, R ky2, R ky4 linked to each other by the respective lines may form a monocyclic or polycyclic structure.

Rky1 、Rky4 係具體舉出與(KA-1)中之Zka1 同樣之基。 R ky1, R ky4 based particularly include the same group of the (KA-1) in the Z ka1.

以Rky1 與Rky2 連結形成之內酯環而言,較佳為前述(KA-1-1)至(KA-1-17)之構造。以吸電子基而言,可舉出與前述式(KB-1)中之Y1 、Y2 同樣者。R ky1 lactone form of the coupling ring and R ky2, preferable are the (KA-1-1) to (KA-1-17) of the structure. The electron-withdrawing group is the same as Y 1 and Y 2 in the above formula (KB-1).

以由通式(KY-1)表示之構造而言,更佳為由下述通式(KY-2)表示之構造。另外,由通式(KY-2)表示之構造係具有除去了該構造中之至少一個任意之氫原子的1價以上之基的基。The structure represented by the general formula (KY-1) is more preferably a structure represented by the following general formula (KY-2). Further, the structure represented by the general formula (KY-2) has a group having a monovalent or higher group in which at least one of the hydrogen atoms in the structure is removed.

式(KY-2)中,Rky6 至Rky10 係各自獨立地表示氫原子、鹵素原子、烷基、環烷基、羰基、羰基氧基、氧基羰基、醚基、羥基、氰基、醯胺基、或芳基。Of formula (KY-2) in, R ky6 to R ky10 lines each independently represent a hydrogen atom, a halogen atom, an alkyl group, a cycloalkyl group, a carbonyl group, carbonyloxy group, oxycarbonyl group, an ether group, a hydroxyl group, a cyano group, acyl Amine, or aryl.

Rky6 至Rky10 係亦可兩個以上彼此連結形成單環或多環構造。R ky6 to R ky10 may be connected to each other in two or more to form a single ring or a polycyclic structure.

Rky5 係表示吸電子基。吸電子基係舉出與前述Y1 、Y2 中之者同樣者,較佳為鹵素原子、或由-C(Rf1 )(Rf2 )-Rf3 表示的鹵(環)烷基或鹵芳基。R ky5 represents an electron withdrawing group. The electron withdrawing group is the same as those of the above Y 1 and Y 2 , and is preferably a halogen atom or a halogen (cyclo)alkyl group or a halogen represented by -C(R f1 )(R f2 )-R f3 . Aryl.

Rky5 至Rky10 係具體舉出與式(KA-1)中之Zka1 同樣之基。R ky5 to R ky10 are specifically the same as those of Z ka1 in the formula (KA-1).

式(KY-2)由表示之構造係更佳為由下述通式(KY-3)表示之部分構造。The structure represented by the formula (KY-2) is more preferably a structure represented by the following general formula (KY-3).

式(KY-3)中,Zka1 、nka係各自與前述通式(KA-1)同義。Rky5 係與前述式(KY-2)同義。In the formula (KY-3), each of Z ka1 and nka is synonymous with the above formula (KA-1). The R ky5 system is synonymous with the above formula (KY-2).

Lky 係表示伸烷基、氧原子或硫原子。以Lky 之伸烷基而言舉出亞甲基、伸乙基等。Lky 係以氧原子或亞甲基為佳,進一步較佳為亞甲基。L ky means an alkyl group, an oxygen atom or a sulfur atom. The methylene group, the ethyl group and the like are exemplified by the alkyl group of L ky . The L ky is preferably an oxygen atom or a methylene group, and more preferably a methylene group.

重複單元(c)只要係藉由加成聚合、縮合聚合、加成縮合等聚合而得之重複單元則為不被限定者,但較佳為藉由碳-碳雙鍵之加成聚合而得之重複單元。作為例子,可舉出丙烯酸系重複單元(亦含有於α位、β位具有取代基之系統)、苯乙烯系重複單元(亦含有於α位、β位具有取代基之系統)、乙烯基醚系重複單元、降莰烯系重複單元、順丁烯二酸衍生物(順丁烯二酸酐或其衍生物、順丁烯二醯亞胺、等)之重複單元等,較佳為丙烯酸系重複單元、苯乙烯系重複單元、乙烯基醚系重複單元、降莰烯系重複單元,更佳為丙烯酸系重複單元、乙烯基醚系重複單元、降莰烯系重複單元,以丙烯酸系重複單元為最佳。The repeating unit (c) is not limited as long as it is obtained by polymerization such as addition polymerization, condensation polymerization, addition condensation or the like, but is preferably obtained by addition polymerization of a carbon-carbon double bond. Repeat unit. Examples thereof include acrylic repeating units (including a system having a substituent at the α-position and the β-position), a styrene-based repeating unit (a system also having a substituent at the α-position and the β-position), and a vinyl ether. a repeating unit of a repeating unit, a norbornene-based repeating unit, a maleic acid derivative (maleic anhydride or a derivative thereof, maleimide, etc.), preferably an acrylic repeat a unit, a styrene repeating unit, a vinyl ether repeating unit, a norbornene-based repeating unit, more preferably an acrylic repeating unit, a vinyl ether-based repeating unit, or a norbornene-based repeating unit, and an acrylic repeating unit optimal.

重複單元(c)係可為具有於下表示之部分構造的重複單元。The repeating unit (c) may be a repeating unit having a partial configuration shown below.

通式(cc)中,Z1 係各自獨立地表示單鍵、醚鍵、酯鍵、醯胺鍵、胺基甲酸酯鍵或脲鍵結,較佳為表示酯鍵。In the formula (cc), the Z 1 groups each independently represent a single bond, an ether bond, an ester bond, a guanamine bond, a urethane bond or a urea bond, and preferably represent an ester bond.

Z2 係各自獨立地表示鏈狀或是環狀伸烷基,較佳為表示碳數1或是2之伸烷基或碳數5至10之伸環烷基。The Z 2 groups each independently represent a chain or cyclic alkyl group, and preferably represent a C 1 or 2 alkylene group or a C 5 to 10 cycloalkyl group.

Ta係各自獨立地表示烷基、環烷基、烷氧基、腈基、羥基、醯胺基、芳基或吸電子基(與前述通式(KB-1)中之作為Y1 及Y2 之吸電子基同義),較佳為表示烷基、環烷基、吸電子基,進一步較佳為表示吸電子基。於Ta有多個的情況,Ta亦可彼此鍵結形成環。The Ta system each independently represents an alkyl group, a cycloalkyl group, an alkoxy group, a nitrile group, a hydroxyl group, a decylamino group, an aryl group or an electron withdrawing group (as in the above formula (KB-1) as Y 1 and Y 2 The electron withdrawing group is synonymous), preferably an alkyl group, a cycloalkyl group, an electron withdrawing group, and more preferably an electron withdrawing group. In the case where there are a plurality of Ta, Ta may be bonded to each other to form a ring.

L0 係表示單鍵或m+1價之烴基(較佳為碳數20以下),較佳為表示單鍵。作為L0 之單鍵係、m為1之情況。作為L0 之m+1價之烴基係表示,例如伸烷基、伸環烷基、伸苯基、或從此等之組合除去m-1個任意之氫原子的m+1價之烴基。k為2時,兩個L0 亦可彼此鍵結形成環。L 0 represents a single bond or a hydrocarbon group of m+1 (preferably having a carbon number of 20 or less), and preferably represents a single bond. As a single bond of L 0 , m is 1. The hydrocarbon group which is a m+1 valence of L 0 represents, for example, an alkyl group, a cycloalkyl group, a phenyl group, or a m+1 valent hydrocarbon group in which m-1 arbitrary hydrogen atoms are removed from the combination. When k is 2, two L 0 may also be bonded to each other to form a ring.

L係各自獨立地表示羰基、羰基氧基或醚基。The L system each independently represents a carbonyl group, a carbonyloxy group or an ether group.

Tc係表示氫原子、烷基、環烷基、腈基、羥基、醯胺基、芳基或吸電子基(與前述通式(KB-1)中之作為Y1 及Y2 之吸電子基同義)。Tc represents a hydrogen atom, an alkyl group, a cycloalkyl group, a nitrile group, a hydroxyl group, a decylamino group, an aryl group or an electron withdrawing group (and an electron withdrawing group as Y 1 and Y 2 in the above formula (KB-1)) Synonymous).

*係表示對樹脂之主鏈或側鏈的連接鍵。亦即,由式(cc)表示之部分構造亦可直接鍵結於主鏈,亦可鍵結由式(cc)表示之部分構造於樹脂之側鏈。另外,所謂對主鏈之連接鍵,為對存在於構成主鏈之鍵結中的原子之連接鍵,所謂對側鏈之連接鍵,為對存在於構成主鏈之鍵結中以外的原子之連接鍵。* indicates a bond to the main chain or side chain of the resin. That is, a part of the structure represented by the formula (cc) may be directly bonded to the main chain, or a portion represented by the formula (cc) may be bonded to the side chain of the resin. Further, the connection bond to the main chain is a bond to an atom existing in a bond constituting the main chain, and the bond of the opposite side chain is an atom existing in a bond other than the bond constituting the main chain. Connection key.

m係表示0至28之整數,較佳為1至3之整數,再更佳為1。The m system represents an integer of 0 to 28, preferably an integer of 1 to 3, and still more preferably 1.

k係表示0至2之整數,較佳為1。k is an integer of 0 to 2, preferably 1.

q係表示0至5之整數,較佳為0至2。The q system represents an integer of 0 to 5, preferably 0 to 2.

r係表示0至5之整數。r is an integer from 0 to 5.

另外,代替-(L)r-Tc,亦可取代-L0-(Ta)m。Further, instead of -(L)r-Tc, -L0-(Ta)m may be substituted.

在於糖內酯之末端具有氟原子之情況,又於同一重複單元內之與糖內酯側之側鏈不同的側鏈上具有氟原子之情況(重複單元(c“))亦較佳。In the case where the terminal of the sugar lactone has a fluorine atom, and the side chain having a side chain different from the sugar lactone side in the same repeating unit has a fluorine atom (repeating unit (c")) is also preferable.

以重複單元(c)之更具體的構造而言,具有於下表示之部分構造的重複單元較佳。In the more specific configuration of the repeating unit (c), the repeating unit having the partial structure shown below is preferable.

通式(ca-2)及(cb-2)中,Z1 、Z2 、Tc、Ta、L、q及r係與通式(cc)中之各者同義。In the general formulae (ca-2) and (cb-2), Z 1 , Z 2 , Tc, Ta, L, q and r are synonymous with each of the formula (cc).

Tb係各自獨立地表示烷基、環烷基、烷氧基、腈基、羥基、醯胺基、芳基或吸電子基(與前述通式(KB-1)中之作為Y1 及Y2 之吸電子基同義)。Each of Tb independently represents an alkyl group, a cycloalkyl group, an alkoxy group, a nitrile group, a hydroxyl group, a decylamino group, an aryl group or an electron withdrawing group (as in the above formula (KB-1) as Y 1 and Y 2 The electron-withdrawing base is synonymous).

*係表示對樹脂之主鏈或側鏈之連接鍵。亦即由式(ca-2)或(cb-2)表示之部分構造亦可直接鍵結於主鏈,於樹脂之側鏈亦可鍵結由式(ca-2)或(cb-2)表示之部分構造。* indicates a bond to the main chain or side chain of the resin. That is, a part of the structure represented by the formula (ca-2) or (cb-2) may be directly bonded to the main chain, and the side chain of the resin may be bonded by the formula (ca-2) or (cb-2). Indicates the partial construction.

m係表示1至28之整數,較佳為1至3之整數,更佳為1。The m system represents an integer of 1 to 28, preferably an integer of 1 to 3, more preferably 1.

n係表示0至11之整數,較佳為0至5之整數,更佳為1或2。The n series represents an integer of 0 to 11, preferably an integer of 0 to 5, more preferably 1 or 2.

p係表示0至5之整數,較佳為0至3之整數,更佳為1或2。p is an integer of 0 to 5, preferably an integer of 0 to 3, more preferably 1 or 2.

通式(2)中,R2 係表示鏈狀或環狀伸烷基,有多個的情況下係可相同亦可不同。In the formula (2), R 2 represents a chain or a cyclic alkyl group, and when it is plural, it may be the same or different.

R3 係構成碳上之氫原子之一部分或全部經氟原子取代,表示直鏈狀、分枝狀或環狀之烴基。R 3 is a hydrocarbon group in which a part or all of a hydrogen atom on a carbon is substituted with a fluorine atom, and represents a linear, branched or cyclic hydrocarbon group.

R4 係表示鹵素原子、氰基、羥基、醯胺基、烷基、環烷基、烷氧基、苯基、醯基、烷氧基羰基、或由R-C(=O)-或是R-C(=O)O-表示的基(R係表示烷基或是環烷基。)。R4 有多個的情況,其係可相同亦可不同,又,兩個以上之R4 亦可鍵結並形成環。R 4 represents a halogen atom, a cyano group, a hydroxyl group, a decylamino group, an alkyl group, a cycloalkyl group, an alkoxy group, a phenyl group, a fluorenyl group, an alkoxycarbonyl group, or RC(=O)- or RC ( =O) A group represented by O- (R represents an alkyl group or a cycloalkyl group). There are a plurality of cases of R 4 , which may be the same or different, and two or more R 4 may be bonded and form a ring.

X係表示伸烷基、氧原子或硫原子。The X system represents an alkyl group, an oxygen atom or a sulfur atom.

Z係表示單鍵、醚鍵、酯鍵、醯胺鍵、胺基甲酸酯鍵或脲鍵結,有多個的情況下係可相同亦可不同。The Z system represents a single bond, an ether bond, an ester bond, a guanamine bond, a urethane bond or a urea bond, and when there are a plurality of them, they may be the same or different.

*係表示對樹脂之主鏈之連接鍵。* indicates the connection key to the main chain of the resin.

n係表示重複數,表示0至5之整數。The n system represents a repetition number and represents an integer of 0 to 5.

m係為取代基數,表示0至7之整數。m is the number of substituents and represents an integer of 0 to 7.

作為-R2 -Z- 之構造較佳為以由-(CH2 )1 -COO-表示之構造較佳(1係表示1至5之整數)。The structure of -R 2 -Z - is preferably a structure represented by -(CH 2 ) 1 -COO- (1 is an integer of 1 to 5).

表示具有極性變換基的重複單元(c)之具體例,但不為限定於此者。A specific example of the repeating unit (c) having a polar shift group is shown, but is not limited thereto.

Ra係表示氫原子、氟原子、甲基或三氟甲基。The Ra system represents a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group.

又,樹脂(C)係含有具有氟原子及矽原子之至少一者的重複單元。Further, the resin (C) contains a repeating unit having at least one of a fluorine atom and a ruthenium atom.

藉此,感光化射線或感放射線樹脂膜於表層,樹脂(C)不均化,液浸介質為水之情況,使於感光化射線或感放射線樹脂成為膜時之對於水之光阻膜表面之後退接觸角提升,可使液浸水跟隨性提升。Thereby, the photosensitive ray or the radiation sensitive resin film is on the surface layer, the resin (C) is not uniform, and the liquid immersion medium is water, and the surface of the photoresist film for water when the sensitized ray or the radiation sensitive resin is formed into a film The back contact angle is raised to improve the liquid immersion followability.

感光化射線或感放射線樹脂膜之後退接觸角係,曝光時之溫度,通常室溫23±3℃、濕度45±5%中,以60°至90°為佳、更佳為65°以上、再更佳為70°以上、特佳為75°以上。The photosensitive ray or the radiation sensitive resin film is subjected to a back contact angle system, and the temperature at the time of exposure is usually 23±3° C. at room temperature and 45±5% at a humidity, preferably 60° to 90°, more preferably 65° or more. More preferably, it is 70 or more, and particularly preferably 75 or more.

樹脂(C)係如前述一般於界面為不均者,但不同於界面活性劑,沒有於分子內具有親水基的必要,亦可對於將極性/非極性物質均一地混合沒有助益。The resin (C) is generally not uniform at the interface as described above, but unlike the surfactant, it is not necessary to have a hydrophilic group in the molecule, and it is not advantageous to uniformly mix the polar/nonpolar substance.

液浸曝光步驟中係跟隨曝光頭以高速掃描晶圓上而形成曝光圖案之動作,因液浸液有需要活動於晶圓上,動態中對於光阻膜之液浸液之接觸角變為重要,液滴無殘留、跟隨曝光頭之高速掃描的性能於光阻係被要求者。In the immersion exposure step, the exposure head is followed by scanning the wafer at a high speed to form an exposure pattern. Since the liquid immersion liquid needs to be active on the wafer, the contact angle of the liquid immersion liquid for the photoresist film becomes important in the dynamic state. The droplets have no residue, and the performance of the high-speed scanning following the exposure head is required by the photoresist system.

作為樹脂(C),由於具有氟原子及矽原子之至少一者,提升光阻表面之疏水性(水跟從性)、並減低顯影殘渣(浮渣(scum))。As the resin (C), since at least one of a fluorine atom and a ruthenium atom is provided, the hydrophobicity (water followability) of the resist surface is improved, and the development residue (scum) is reduced.

作為具有氟原子之重複單元的部分構造,較佳為有具有氟原子之烷基、具有氟原子之環烷基、或具有氟原子之芳基的重複單元。The partial structure having a repeating unit having a fluorine atom is preferably a repeating unit having an alkyl group having a fluorine atom, a cycloalkyl group having a fluorine atom, or an aryl group having a fluorine atom.

具有氟原子之烷基(較佳為碳數1至10、更佳為碳數1至4)係亦可具有至少一個氫原子經氟原子取代之直鏈或分枝烷基,進一步其他的取代基。The alkyl group having a fluorine atom (preferably having a carbon number of 1 to 10, more preferably 1 to 4 carbon atoms) may have a linear or branched alkyl group in which at least one hydrogen atom is substituted with a fluorine atom, and further substituted base.

具有氟原子之環烷基係為至少一個之氫原子經氟原子取代之單環或多環之環烷基,亦可具有進一步其他的取代基。The cycloalkyl group having a fluorine atom is a monocyclic or polycyclic cycloalkyl group in which at least one hydrogen atom is substituted by a fluorine atom, and may have further substituents.

以具有氟原子之芳基而言,可舉出苯基、萘基等芳基之至少一個之氫原子經氟原子取代之者,亦可具有進一步其他的取代基。The aryl group having a fluorine atom may be one in which a hydrogen atom of at least one of an aryl group such as a phenyl group or a naphthyl group is substituted with a fluorine atom, and may have further substituents.

作為具有氟原子之烷基、具有氟原子之環烷基、或具有氟原子之芳基,可舉出較佳為由下述通式(F2)至(F4)之任一者表示的基,本發明係不為限定於此者。The alkyl group having a fluorine atom, the cycloalkyl group having a fluorine atom, or the aryl group having a fluorine atom is preferably a group represented by any one of the following general formulae (F2) to (F4). The present invention is not limited thereto.

通式(F2)至(F4)中,R57 至R68 係各自獨立地表示氫原子、氟原子或烷基(直鏈或是分枝)。但是,R57 至R61 之至少一個、R62 至R64 之至少一個及R65 至R68 之至少一個係表示氟原子,或至少一個之氫原子經氟原子取代之烷基(較佳為碳數1至4)。In the general formulae (F2) to (F4), R 57 to R 68 each independently represent a hydrogen atom, a fluorine atom or an alkyl group (straight chain or branched). However, at least one of R 57 to R 61 , at least one of R 62 to R 64 and at least one of R 65 to R 68 represent a fluorine atom, or an alkyl group in which at least one hydrogen atom is substituted with a fluorine atom (preferably Carbon number 1 to 4).

R57 至R61 及R65 至R67 係較佳為全部為氟原子。R62 、R63 及R68 係以氟烷基(較佳為碳數1至4)為佳,進一步較佳為碳數1至4之全氟烷基。R62 與R63 係亦可互相結合形成環。R 57 to R 61 and R 65 to R 67 are preferably all fluorine atoms. R 62 , R 63 and R 68 are preferably a fluoroalkyl group (preferably having 1 to 4 carbon atoms), and still more preferably a perfluoroalkyl group having 1 to 4 carbon atoms. R 62 and R 63 may also be bonded to each other to form a ring.

以由通式(F2)表示之基之具體例而言,可舉出例如對氟苯基、五氟苯基、3,5-二(三氟甲基)苯基等。Specific examples of the group represented by the formula (F2) include p-fluorophenyl group, pentafluorophenyl group, and 3,5-bis(trifluoromethyl)phenyl group.

以由通式(F3)表示基之具體例而言,可舉出三氟甲基、五氟丙基、五氟乙基、七氟丁基、六氟異丙基、七氟異丙基、六氟(2-甲基)異丙基、九氟丁基、八氟異丁基、九氟己基、九氟-三級丁基、全氟異戊基、全氟辛基、全氟(三甲基)己基、2,2,3,3-四氟環丁基、全氟環己基等。較佳為六氟異丙基、七氟異丙基、六氟(2-甲基)異丙基、八氟異丁基、九氟-三級丁基、全氟異戊基,進一步較佳為六氟異丙基、七氟異丙基。Specific examples of the group represented by the formula (F3) include a trifluoromethyl group, a pentafluoropropyl group, a pentafluoroethyl group, a heptafluorobutyl group, a hexafluoroisopropyl group, and a heptafluoroisopropyl group. Hexafluoro(2-methyl)isopropyl, nonafluorobutyl, octafluoroisobutyl, nonafluorohexyl, nonafluoro-tertiary butyl, perfluoroisopentyl, perfluorooctyl, perfluoro(three Methyl)hexyl, 2,2,3,3-tetrafluorocyclobutyl, perfluorocyclohexyl, and the like. More preferably, it is hexafluoroisopropyl, heptafluoroisopropyl, hexafluoro(2-methyl)isopropyl, octafluoroisobutyl, nonafluoro-tertiary butyl, perfluoroisopentyl, and further preferably It is hexafluoroisopropyl or heptafluoroisopropyl.

以由通式(F4)表示之基之具體例而言,可舉出例如-C(CF3 )2 OH、-C(C2 F5 )2 OH、-C(CF3 )(CH3 )OH、-CH(CF3 )OH等,以-C(CF3 )2 OH較佳。Specific examples of the group represented by the general formula (F4) include, for example, -C(CF 3 ) 2 OH, -C(C 2 F 5 ) 2 OH, and -C(CF 3 )(CH 3 ). OH, -CH(CF 3 )OH or the like is preferably -C(CF 3 ) 2 OH.

含氟之部分構造係亦可直接鍵結,進一步亦可經由從由伸烷基、伸苯基、醚基、硫醚基、羰基、酯基、醯胺基、胺基甲酸酯基、或伸脲基所構成之群組選擇之單獨或是兩個以上之基的組合而鍵結。The fluorine-containing part of the structure may also be directly bonded, or further may be derived from an alkyl group, a phenyl group, an ether group, a thioether group, a carbonyl group, an ester group, a decyl group, an urethane group, or a stretching group. The group consisting of urea groups is selected to be bonded alone or in combination of two or more groups.

以具有氟原子之重複單元而言,可舉出較佳之於下表示者。The repeating unit having a fluorine atom is preferably a lower one.

式中,R10 、R11 係各自獨立地表示氫原子、氟原子、烷基(較佳為碳數1至4之直鏈或分枝之烷基、以具有取代基之烷基而言可舉出尤其氟化烷基)。In the formula, R 10 and R 11 each independently represent a hydrogen atom, a fluorine atom, an alkyl group (preferably a linear or branched alkyl group having 1 to 4 carbon atoms, and an alkyl group having a substituent; In particular, fluorinated alkyl groups are mentioned.

W3 至W6 係各自獨立地表示含有至少一個以上之氟原子的有機基。具體舉出前述(F2)至(F4)之原子團。W 3 to W 6 each independently represent an organic group containing at least one fluorine atom. Specifically, the atomic groups of the above (F2) to (F4) are mentioned.

又,於此等以外亦可施用具有如於下述所示一般的單元的樹脂。Further, a resin having a unit as generally shown below may be applied in addition to these.

式中,R4 至R7 係各自獨立地表示氫原子、氟原子、或烷基(較佳為碳數1至4之直鏈或分枝之烷基、以具有取代基之烷基而言可舉出尤其氟化烷基)。但是,R4 至R7 之至少一個表示係氟原子。R4 與R5 或是R6 與R7 係亦可形成環。In the formula, R 4 to R 7 each independently represent a hydrogen atom, a fluorine atom, or an alkyl group (preferably a linear or branched alkyl group having 1 to 4 carbon atoms, and an alkyl group having a substituent; In particular, a fluorinated alkyl group can be mentioned. However, at least one of R 4 to R 7 represents a fluorine atom. R 4 and R 5 or R 6 and R 7 may also form a ring.

W2 係表示含有至少一個之氟原子的有機基。具體舉出前述(F2)至(F4)之原子團。W 2 represents an organic group containing at least one fluorine atom. Specifically, the atomic groups of the above (F2) to (F4) are mentioned.

L2 係表示單鍵、或是2價之連結基。以2價之連結基而言,表示取代或無取代之伸芳基、取代或無取代之伸烷基、取代或無取代之伸環烷基、-O-、-SO2 -、-CO-、-N(R)-(式中,R係表示氫原子或烷基)、-NHSO2 -或組合了此等之多個的2價之連結基。L 2 represents a single bond or a divalent linking group. In the case of a divalent linking group, a substituted or unsubstituted extended aryl group, a substituted or unsubstituted alkylene group, a substituted or unsubstituted stretched cycloalkyl group, -O-, -SO 2 -, -CO- And -N(R)- (wherein R represents a hydrogen atom or an alkyl group), -NHSO 2 - or a combination of a plurality of such divalent linking groups.

作為重複單元中之具有矽原子的部分構造,較佳為具有烷基矽烷基構造(較佳為三烷基矽烷基)、或環狀矽氧烷構造的樹脂。As the partial structure having a ruthenium atom in the repeating unit, a resin having an alkyl fluorenylene structure (preferably a trialkyl decyl group) or a cyclic siloxane structure is preferable.

以烷基矽烷基構造、或環狀矽氧烷構造而言,具體而言,可舉出由下述通式(CS-1)至(CS-3)表示的基等。Specific examples of the alkyl fluorenyl structure and the cyclic siloxane structure include a group represented by the following general formulae (CS-1) to (CS-3).

通式(CS-1)至(CS-3)中,R12 至R26 係各自獨立地表示直鏈或是分枝烷基(較佳為碳數1至20)或環烷基(較佳為碳數3至20)。In the general formulae (CS-1) to (CS-3), R 12 to R 26 each independently represent a straight-chain or branched alkyl group (preferably, a carbon number of 1 to 20) or a cycloalkyl group (preferably). The carbon number is 3 to 20).

L3 至L5 係表示單鍵或2價之連結基。以2價之連結基而言,可舉出從由伸烷基、伸苯基、醚基、硫醚基、羰基、酯基、醯胺基、胺基甲酸酯基、或伸脲基所構成的群組選擇之單獨或是兩個以上之基之組合。L 3 to L 5 represent a single bond or a divalent linking group. The divalent linking group may be composed of an alkyl group, a phenyl group, an ether group, a thioether group, a carbonyl group, an ester group, a decyl group, a urethane group or a ureido group. The group selection is either alone or a combination of two or more.

n係表示1至5之整數。The n system represents an integer of 1 to 5.

樹脂(C)中,重複單元(c)之含有率係相對於樹脂(C)中之全部重複單元以10至100mol%為佳,更佳為20至100mol%,再更佳為30至100mol%,最佳為40至100mol%。In the resin (C), the content of the repeating unit (c) is preferably 10 to 100 mol%, more preferably 20 to 100 mol%, still more preferably 30 to 100 mol%, based on all the repeating units in the resin (C). , preferably 40 to 100 mol%.

重複單元(c’)之含有率係相對於樹脂(C)中之全部重複單元以10至100mol%為佳,更佳為20至100mol%,再更佳為30至100mol%,最佳為40至100mol%。The content of the repeating unit (c') is preferably from 10 to 100 mol%, more preferably from 20 to 100 mol%, still more preferably from 30 to 100 mol%, most preferably 40, based on all the repeating units in the resin (C). Up to 100 mol%.

重複單元(c*)之含有率係相對於樹脂(C)中之全部重複單元以10至90mol%為佳,更佳為15至85mol%,再更佳為20至80mol%,最佳為25至75mol%。與重複單元(c*)一起使用之具有氟原子及矽原子之至少一者的重複單元之含有率係相對於樹脂(C)中之全部重複單元以10至90mol%為佳,更佳為15至85mol%,再更佳為20至80mol%,最佳為25至75mol%。The content of the repeating unit (c*) is preferably from 10 to 90 mol%, more preferably from 15 to 85 mol%, still more preferably from 20 to 80 mol%, most preferably 25, based on all the repeating units in the resin (C). Up to 75 mol%. The content of the repeating unit having at least one of a fluorine atom and a ruthenium atom used together with the repeating unit (c*) is preferably 10 to 90 mol%, more preferably 15%, based on all the repeating units in the resin (C). It is more preferably from 85 to 80 mol%, still more preferably from 20 to 80 mol%, most preferably from 25 to 75 mol%.

重複單元(c”)之含有率係相對於樹脂(C)中之全部重複單元以10至100mol%為佳,更佳為20至100mol%,再更佳為30至100mol%,最佳為40至100mol%。The content of the repeating unit (c") is preferably from 10 to 100 mol%, more preferably from 20 to 100 mol%, still more preferably from 30 to 100 mol%, most preferably 40, based on all the repeating units in the resin (C). Up to 100 mol%.

樹脂(C)中,氟原子或矽原子係亦可具有於樹脂之主鏈中,亦可取代於側鏈。樹脂(C)係亦可進一步含有與重複單元(c’)、(c”)不同的具有氟原子及矽原子之至少一者的重複單元(c1)。In the resin (C), the fluorine atom or the ruthenium atom may be contained in the main chain of the resin or may be substituted for the side chain. The resin (C) may further contain a repeating unit (c1) having at least one of a fluorine atom and a ruthenium atom different from the repeating units (c') and (c").

具有氟原子及矽原子之至少一者的重複單元中之氟原子或矽原子係亦可具有於樹脂之主鏈中,亦可取代於側鏈。The fluorine atom or the ruthenium atom system in the repeating unit having at least one of a fluorine atom and a ruthenium atom may be contained in the main chain of the resin or may be substituted for the side chain.

重複單元(c1)中之具有氟原子之部分構造係舉出與前述同樣者,可舉出較佳為由前述通式(F2)至(F4)表示之基。The structure having a fluorine atom in the repeating unit (c1) is the same as the above, and is preferably a group represented by the above formulas (F2) to (F4).

重複單元(c1)中之具有矽原子的部分構造係舉出與前述同樣者,可舉出較佳為由前述通式(CS-1)至(CS-3)表示之基。The partial structure having a ruthenium atom in the repeating unit (c1) is the same as the above, and is preferably a group represented by the above formula (CS-1) to (CS-3).

重複單元(c1)係較佳為(甲基)丙烯酸系重複單元。The repeating unit (c1) is preferably a (meth)acrylic repeating unit.

以下舉出重複單元(c1)之具體例,但本發明係不為限定於此者。另外,具體例中,X1 係表示氫原子、-CH3 、-F或-CF3 ,X2 係表示-F或-CF3Specific examples of the repeating unit (c1) are given below, but the present invention is not limited thereto. Further, in a specific example, X 1 represents a hydrogen atom, -CH 3 , -F or -CF 3 , and X 2 represents -F or -CF 3 .

再者,樹脂(C)係亦可具有從下述(x)、(z)之群組選擇之至少一個基。Further, the resin (C) may have at least one selected from the group consisting of (x) and (z) below.

(x)鹼可溶性基、(z)藉由酸之作用分解之基。(x) an alkali-soluble group, (z) a group decomposed by the action of an acid.

以(x)鹼可溶性基而言,可舉出苯酚性羥基、羧酸基、氟化醇基、磺酸基、磺醯胺基、磺醯亞胺基、(烷基磺醯基)(烷基羰基)亞甲基、(烷基磺醯基)(烷基羰基)醯亞胺基、雙(烷基羰基)亞甲基、雙(烷基羰基)醯亞胺基、雙(烷基磺醯基)亞甲基、雙(烷基磺醯基)醯亞胺基、參(烷基羰基)亞甲基、參(烷基磺醯基)亞甲基等。Examples of the (x) alkali-soluble group include a phenolic hydroxyl group, a carboxylic acid group, a fluorinated alcohol group, a sulfonic acid group, a sulfonylamino group, a sulfonimide group, or an alkylsulfonyl group. Methyl carbonyl) methylene, (alkyl sulfonyl) (alkylcarbonyl) fluorenylene, bis(alkylcarbonyl)methylene, bis(alkylcarbonyl) fluorenylene, bis (alkyl sulfonate) Mercapto) methylene, bis(alkylsulfonyl)phosphonium imino group, ginseng (alkylcarbonyl) methylene group, ginseng (alkylsulfonyl) methylene group, and the like.

以較佳之鹼可溶性基而言,可舉出氟化醇基(較佳為六氟異丙醇)、磺醯亞胺基、雙(羰基)亞甲基。The preferred alkali-soluble group may, for example, be a fluorinated alcohol group (preferably hexafluoroisopropanol), a sulfonimide group or a bis(carbonyl)methylene group.

以具有鹼可溶性基(x)的重複單元而言,可舉出以丙烯酸、甲基丙烯酸的重複單元之類的於樹脂之主鏈直接鍵結鹼可溶性基的重複單元,或是經由連結基於樹脂之主鏈鍵結鹼可溶性基的重複單元等,進一步亦可於聚合時使用具有鹼可溶性基之聚合起始劑或連鏈移動劑而於聚合物鏈之末端導入,任一之情況亦較佳。The repeating unit having an alkali-soluble group (x) may be a repeating unit in which a base-soluble group is directly bonded to a main chain of a resin such as a repeating unit of acrylic acid or methacrylic acid, or a link-based resin. The repeating unit of the main chain-bonded alkali-soluble group or the like may be further introduced at the end of the polymer chain by using a polymerization initiator or a chain-moving agent having an alkali-soluble group during polymerization, and any of them is preferred. .

具有鹼可溶性基(x)的重複單元之含有率係相對於樹脂(C)中之全部重複單元以1至50mol%為佳,更佳為3至35mol%,再更佳為5至30mol%。The content of the repeating unit having the alkali-soluble group (x) is preferably from 1 to 50 mol%, more preferably from 3 to 35 mol%, still more preferably from 5 to 30 mol%, based on all the repeating units in the resin (C).

於下表示具有鹼可溶性基(x)的重複單元之具體例,但本發明係不為限定於此者。具體例中,Rx係表示H,CH3 ,CH2 OH,或CF3Specific examples of the repeating unit having an alkali-soluble group (x) are shown below, but the present invention is not limited thereto. In a specific example, Rx represents H, CH 3 , CH 2 OH, or CF 3 .

樹脂(C)中,具有藉由酸之作用分解之基(z)的重複單元係可舉出與後述(A)成分之樹脂所舉出之具有酸分解性基的重複單元同樣者。以酸分解性基而言較佳為、酯基、烯醇酯基、縮醛酯基、3級烷酯基等。再更佳為3級烷酯基。In the resin (C), the repeating unit having a group (z) which is decomposed by the action of an acid is the same as the repeating unit having an acid-decomposable group exemplified by the resin of the component (A) to be described later. Preferably, in terms of an acid-decomposable group, An ester group, an enol ester group, an acetal ester group, a 3-alkyl ester group or the like. More preferably, it is a 3-stage alkyl ester group.

以具有酸分解性基的重複單元而言,以由下述通式(CAI)表示的重複單元較佳。In the case of a repeating unit having an acid-decomposable group, a repeating unit represented by the following formula (CAI) is preferred.

通式(CAI)中,Xa1 係表示氫原子、甲基或由-CH2 -R9 表示之基。R9 係表示羥基或1價之有機基,可舉出例如碳數5以下之烷基、醯基,較佳為碳數3以下之烷基,進一步較佳為甲基。Xa1 係表示較佳為氫原子、甲基、三氟甲基或羥甲基。In the general formula (CAI), Xa 1 represents a hydrogen atom, a methyl group or a group represented by -CH 2 -R 9 . R 9 is a hydroxyl group or a monovalent organic group, and examples thereof include an alkyl group having 5 or less carbon atoms and a mercapto group, preferably an alkyl group having 3 or less carbon atoms, and more preferably a methyl group. Xa 1 represents preferably a hydrogen atom, a methyl group, a trifluoromethyl group or a hydroxymethyl group.

T係表示單鍵或2價之連結基。The T system represents a single bond or a divalent linking group.

Rx1 至Rx3 係各自獨立地表示烷基(直鏈或分枝)或環烷基(單環或多環)。Rx 1 to Rx 3 each independently represent an alkyl group (straight or branched) or a cycloalkyl group (monocyclic or polycyclic).

Rx1 至Rx3 之至少兩個亦可結合形成環烷基(單環或多環)。At least two of Rx 1 to Rx 3 may also be combined to form a cycloalkyl group (monocyclic or polycyclic).

以T之2價之連結基而言,可舉出伸烷基、-COO-R三級基、-O-R三級基等。式中,Rt係表示伸烷基或伸環烷基。Examples of the linking group of the two valencies of T include an alkylene group, a -COO-R tertiary group, and a -O-R tertiary group. In the formula, Rt represents an alkylene group or a cycloalkyl group.

T係較佳為單鍵或-COO-R三級基。Rt係以碳數1至5之伸烷基為佳,以-CH2 -基、-(CH2 )3 -基為更佳。The T system is preferably a single bond or a -COO-R tertiary group. Rt is preferably an alkylene group having 1 to 5 carbon atoms, more preferably a -CH 2 - group or a -(CH 2 ) 3 - group.

以Rx1 至Rx3 之烷基而言,較佳為甲基、乙基、正丙基、異丙基、正丁基、異丁基、三級丁基等之碳數1至4者。The alkyl group of Rx 1 to Rx 3 is preferably a carbon number of 1 to 4 such as a methyl group, an ethyl group, a n-propyl group, an isopropyl group, a n-butyl group, an isobutyl group or a tertiary butyl group.

以Rx1 至Rx3 之環烷基而言,較佳為環戊基、環己基等之單環之環烷基、降莰基、四環癸基、四環十二烷基、金剛烷基等之多環之環烷基。Cycloalkyl to Rx 1 to Rx. 3 in terms of, preferably cyclopentyl, cyclohexyl, etc. groups of the monocyclic, norbornyl group, tetracyclodecanyl group, tetracyclododecanyl group, adamantyl A polycyclic cycloalkyl group.

以Rx1 至Rx3 之至少兩個鍵結形成之環烷基而言,較佳為環戊基、環己基等之單環之環烷基、降莰基、四環癸基、四環十二烷基、金剛烷基等之多環之環烷基。In the case of a cycloalkyl group formed by bonding at least two of Rx 1 to Rx 3 , a cycloalkyl group of a monocyclic group such as a cyclopentyl group or a cyclohexyl group, a decyl group, a tetracyclic fluorenyl group, and a tetracyclic decene are preferable. A polycyclic cycloalkyl group such as a dialkyl group or an adamantyl group.

Rx1 為甲基或乙基、Rx2 與Rx3 鍵結形成上述之環烷基之態樣較佳。It is preferred that Rx 1 is a methyl group or an ethyl group, and Rx 2 and Rx 3 are bonded to form the above cycloalkyl group.

上述各基係亦可具有取代基,以取代基而言,可舉出例如烷基(碳數1至4)、鹵素原子、羥基、烷氧基(碳數1至4)、羧基、烷氧基羰基(碳數2至6)等,較佳為碳數8以下。Each of the above-mentioned groups may have a substituent, and examples of the substituent include an alkyl group (having a carbon number of 1 to 4), a halogen atom, a hydroxyl group, an alkoxy group (having a carbon number of 1 to 4), a carboxyl group, and an alkoxy group. The carbonyl group (carbon number 2 to 6) or the like is preferably 8 or less carbon atoms.

樹脂(C)中,具有藉由酸之作用分解之基(z)的重複單元之含有率係相對於樹脂(C)中之全部重複單元以1至80mol%為佳,更佳為10至80mol%,再更佳為20至60mol%。因具有(z)藉由酸之作用分解之基,可使LWR提升。In the resin (C), the content of the repeating unit having the group (z) decomposed by the action of an acid is preferably from 1 to 80 mol%, more preferably from 10 to 80 mol, based on all the repeating units in the resin (C). More preferably, it is 20 to 60 mol%. The LWR can be raised by having (z) a group decomposed by the action of an acid.

樹脂(C)係亦可進一步具有其他之重複單元。以其他之重複單元之較佳之態樣而言係舉出以下。The resin (C) may further have other repeating units. The following are the preferred aspects of other repeating units.

(cy1)具有氟原子及/或矽原子,且對酸為穩定,且對鹼顯影液難溶或是不溶的重複單元。(cy1) a repeating unit having a fluorine atom and/or a ruthenium atom and being stable to an acid and insoluble or insoluble to an alkali developer.

(cy2)不具有氟原子、矽原子,且對酸為穩定,且對鹼顯影液難溶或是不溶的重複單元。(cy2) a repeating unit which does not have a fluorine atom or a ruthenium atom, is stable to an acid, and is insoluble or insoluble to an alkali developer.

(cy3)具有氟原子及/或矽原子,且具有前述之(x)、(z)以外之極性基的重複單元。(cy3) a repeating unit having a fluorine atom and/or a ruthenium atom and having a polar group other than the above (x) and (z).

(cy4)不具有氟原子、矽原子,且具有前述之(x)、(z)以外之極性基的重複單元。(cy4) a repeating unit which does not have a fluorine atom or a ruthenium atom and has a polar group other than the above (x) and (z).

所謂(cy1)、(cy2)之重複單元中難溶或是不溶於鹼顯影液,表示(cy1)、(cy2)為不含鹼可溶性基或、藉由酸或鹼顯影液之作用產生鹼可溶性基的基(例如酸分解性基或極性變換基)。The so-called (cy1), (cy2) repeating unit is sparingly soluble or insoluble in an alkali developing solution, indicating that (cy1), (cy2) is an alkali-soluble group-free or alkali-soluble by the action of an acid or alkali developing solution. a group (for example, an acid-decomposable group or a polar group).

重複單元(cy1)、(cy2)係較佳為不具極性基之具有脂環烴構造者。The repeating units (cy1) and (cy2) are preferably those having an alicyclic hydrocarbon structure without a polar group.

於下表示重複單元(cy1)至(cy4)之較佳之態樣。The preferred aspects of the repeating units (cy1) to (cy4) are shown below.

以重複單元(cy1)、(cy2)而言,較佳為由下述通式(CIII)表示之重複單元。The repeating unit (cy1) or (cy2) is preferably a repeating unit represented by the following formula (CIII).

通式(CIII)中,Rc31 係表示亦可經氫原子、氟原子取代的烷基、氰基或-CH2 -O-Rac2 基。式中,Rac2 係表示氫原子、烷基或醯基。Rc31 係以氫原子、甲基、羥甲基、三氟甲基為佳,以氫原子、甲基為特佳。In the formula (CIII), R c31 represents an alkyl group, a cyano group or a -CH 2 -O-Rac 2 group which may be substituted by a hydrogen atom or a fluorine atom. In the formula, Rac 2 represents a hydrogen atom, an alkyl group or a fluorenyl group. R c31 is preferably a hydrogen atom, a methyl group, a methylol group or a trifluoromethyl group, and particularly preferably a hydrogen atom or a methyl group.

Rc32 係表示具有烷基、環烷基、烯基、環烯基之基。此等基係亦可經氟原子、矽原子取代。R c32 represents a group having an alkyl group, a cycloalkyl group, an alkenyl group or a cycloalkenyl group. These groups may also be substituted by fluorine atoms or germanium atoms.

Lc3 係表示單鍵或2價之連結基。L c3 represents a single bond or a divalent linking group.

通式(CIII)中,Rc32 之烷基係較佳為碳數3至20之直鏈或分枝狀烷基。In the formula (CIII), the alkyl group of R c32 is preferably a linear or branched alkyl group having 3 to 20 carbon atoms.

環烷基係較佳為碳數3至20之環烷基。The cycloalkyl group is preferably a cycloalkyl group having 3 to 20 carbon atoms.

烯基係較佳為碳數3至20之烯基。The alkenyl group is preferably an alkenyl group having 3 to 20 carbon atoms.

環烯基係較佳為碳數3至20之環烯基。The cycloalkenyl group is preferably a cycloalkenyl group having 3 to 20 carbon atoms.

Rc32 係較佳為無取代之烷基或經氟原子取代之烷基。R c32 is preferably an unsubstituted alkyl group or an alkyl group substituted by a fluorine atom.

Lc3 之2價之連結基係較佳為酯基、伸烷基(較佳為碳數1至5)、氧基、伸苯基、酯鍵(由-COO-表示之基)。The divalent linking group of L c3 is preferably an ester group, an alkylene group (preferably having a carbon number of 1 to 5), an oxy group, a phenyl group, and an ester bond (the group represented by -COO-).

以重複單元(cy1 )、(cy2 )而言,較佳為由下述通式(C4)或(C5)表示之重複單元。The repeating unit (cy 1 ) or (cy 2 ) is preferably a repeating unit represented by the following formula (C4) or (C5).

通式(C4)中,Rc5 係表示具有至少一個環狀構造,不具有羥基及氰基之任一者的烴基。In the formula (C4), R c5 represents a hydrocarbon group having at least one cyclic structure and having no hydroxyl group or cyano group.

Rac係表示亦可經氫原子、氟原子取代的烷基、氰基或-CH2 -O-Rac2 基。式中,Rac2 係表示氫原子、烷基或醯基。Rac係以氫原子、甲基、羥甲基、三氟甲基為佳,以氫原子、甲基為特佳。Rac means an alkyl group, a cyano group or a -CH 2 -O-Rac 2 group which may be substituted by a hydrogen atom or a fluorine atom. In the formula, Rac 2 represents a hydrogen atom, an alkyl group or a fluorenyl group. Rac is preferably a hydrogen atom, a methyl group, a methylol group or a trifluoromethyl group, and particularly preferably a hydrogen atom or a methyl group.

於Rc5 所具有之環狀構造,包含單環式烴基及多環式烴基。以單環式烴基而言,可舉出例如碳數3至12之環烷基、碳數3至12之環烯基。以較佳之單環式烴基而言,為碳數3至7之單環式烴基。The cyclic structure of R c5 includes a monocyclic hydrocarbon group and a polycyclic hydrocarbon group. The monocyclic hydrocarbon group may, for example, be a cycloalkyl group having 3 to 12 carbon atoms or a cycloalkenyl group having 3 to 12 carbon atoms. In the preferred monocyclic hydrocarbon group, it is a monocyclic hydrocarbon group having 3 to 7 carbon atoms.

於多環式烴基包含環集合烴基、交聯環式烴基。交聯環式烴環係舉出2環式烴環、3環式烴環、4環式烴環等。又,於交聯環式烴環,亦包含縮合環式烴環(例如縮合了多個5至8員環烷基環的縮合環)。較佳之交聯環式烴環係舉出降莰基、金剛烷基。The polycyclic hydrocarbon group contains a cyclic hydrocarbon group and a crosslinked cyclic hydrocarbon group. The crosslinked cyclic hydrocarbon ring system is a 2-ring hydrocarbon ring, a 3-ring hydrocarbon ring, a 4-ring hydrocarbon ring or the like. Further, the crosslinked cyclic hydrocarbon ring also includes a condensed cyclic hydrocarbon ring (for example, a condensed ring in which a plurality of 5- to 8-membered cycloalkyl rings are condensed). Preferred crosslinked cyclic hydrocarbon ring systems are a thiol group, an adamantyl group.

此等之脂環式烴基係亦可具有取代基,以較佳之取代基而言舉出鹵素原子、烷基、經保護基保護之羥基、經保護基保護之胺基等。以較佳之鹵素原子而言舉出溴、氯、氟原子,以較佳之烷基而言舉出甲基、乙基、丁基、三級丁基。上述之烷基係亦可具有進一步取代基,以進一步亦可具有之取代基而言,可舉出鹵素原子、烷基、經保護基保護之羥基、經保護基保護之胺基。The alicyclic hydrocarbon group may have a substituent. Preferred substituents include a halogen atom, an alkyl group, a protecting group-protected hydroxyl group, a protecting group-protected amine group, and the like. The preferred halogen atom is a bromine, chlorine or fluorine atom, and a preferred alkyl group is a methyl group, an ethyl group, a butyl group or a tertiary butyl group. The above alkyl group may further have a substituent, and the substituent may further include a halogen atom, an alkyl group, a protecting group-protected hydroxyl group, and a protecting group-protected amine group.

以保護基而言,可舉出例如烷基、環烷基、芳烷基、經取代之甲基、經取代之乙基、烷氧基羰基、芳烷基氧基羰基。以較佳之烷基而言,可舉出碳數1至4之烷基,以較佳之經取代之甲基而言可舉出甲氧甲基、甲氧硫甲基、苄氧基甲基、三級丁氧基甲基、2-甲氧基乙氧基甲基,以較佳之經取代之乙基而言,可舉出1-乙氧基乙基、1-甲基-1-甲氧基乙基,以較佳之醯基而言,可舉出甲醯基、乙醯基、丙醯基、丁醯基、異丁醯基、戊醯基、三甲基乙醯基等之碳數1至6之脂肪族醯基,以烷氧基羰基而言舉出碳數1至4之烷氧基羰基等。The protecting group may, for example, be an alkyl group, a cycloalkyl group, an aralkyl group, a substituted methyl group, a substituted ethyl group, an alkoxycarbonyl group or an aralkyloxycarbonyl group. The preferred alkyl group is an alkyl group having 1 to 4 carbon atoms, and a preferably substituted methyl group is methoxymethyl, methoxythiomethyl or benzyloxymethyl. Tertiary butoxymethyl, 2-methoxyethoxymethyl, in the case of a preferred substituted ethyl group, 1-ethoxyethyl, 1-methyl-1-methoxy The ethyl group, preferably a fluorenyl group, may have a carbon number of 1 to 6 such as a methyl group, an ethyl group, a propyl group, a butyl group, an isobutyl group, a amyl group or a trimethyl ethyl group. The aliphatic fluorenyl group, and the alkoxycarbonyl group, is an alkoxycarbonyl group having 1 to 4 carbon atoms.

通式(C5)中,Rc6 係表示烷基、環烷基、烯基、環烯基、烷氧基羰基、烷基羰基氧基。此等基係亦可經氟原子、矽原子取代。In the formula (C5), R c6 represents an alkyl group, a cycloalkyl group, an alkenyl group, a cycloalkenyl group, an alkoxycarbonyl group or an alkylcarbonyloxy group. These groups may also be substituted by fluorine atoms or germanium atoms.

Rc6 之烷基係較佳為碳數1至20之直鏈或分枝狀烷基。The alkyl group of R c6 is preferably a linear or branched alkyl group having 1 to 20 carbon atoms.

環烷基係較佳為碳數3至20之環烷基。The cycloalkyl group is preferably a cycloalkyl group having 3 to 20 carbon atoms.

烯基係較佳為碳數3至20之烯基。The alkenyl group is preferably an alkenyl group having 3 to 20 carbon atoms.

環烯基係較佳為碳數3至20之環烯基。The cycloalkenyl group is preferably a cycloalkenyl group having 3 to 20 carbon atoms.

烷氧基羰基係較佳為碳數2至20之烷氧基羰基。The alkoxycarbonyl group is preferably an alkoxycarbonyl group having 2 to 20 carbon atoms.

烷基羰基氧基係較佳為碳數2至20之烷基羰基氧基。The alkylcarbonyloxy group is preferably an alkylcarbonyloxy group having 2 to 20 carbon atoms.

n係表示0至5之整數。n為2以上之情況,多個Rc6 係可相同亦可不同。The n system represents an integer of 0 to 5. When n is 2 or more, a plurality of R c6 systems may be the same or different.

Rc6 係較佳為無取代之烷基或經氟原子取代的烷基,以三氟甲基、三級丁基為特佳。R c6 is preferably an unsubstituted alkyl group or an alkyl group substituted by a fluorine atom, and is particularly preferably a trifluoromethyl group or a tertiary butyl group.

以(cy1)、(cy2)而言,下述由通式(CII-AB)表示的重複單元亦較佳。In the case of (cy1) and (cy2), the following repeating unit represented by the formula (CII-AB) is also preferred.

式(CII-AB)中,Rc11 '及Rc12 '係、各自獨立地氫原子、氰基、鹵素原子或烷基表示。In the formula (CII-AB), R c11 ' and R c12 ' are each independently represented by a hydrogen atom, a cyano group, a halogen atom or an alkyl group.

Zc'係表示含有鍵結了的兩個碳原子(C-C)、為了形成脂環式構造的原子團。Zc' means an atomic group containing a bonded two carbon atoms (C-C) in order to form an alicyclic structure.

又,上述通式(CII-AB)係進一步較佳為下述通式(CII-AB1)或通式(CII-AB2)。Further, the above formula (CII-AB) is more preferably a formula (CII-AB1) or a formula (CII-AB2).

式(CII-AB1)及(CII-AB2)中,Rc13 '至Rc16 '係各自獨立地表示氫原子、鹵素原子、烷基或是環烷基。In the formulae (CII-AB1) and (CII-AB2), R c13 ' to R c16 ' each independently represent a hydrogen atom, a halogen atom, an alkyl group or a cycloalkyl group.

又,Rc13 '至Rc16 '之中至少兩個亦可結合形成環。Further, at least two of R c13 ' to R c16 ' may be combined to form a ring.

n係表示0或1。The n system represents 0 or 1.

於下舉出(cy1)、(cy2)之具體例,但本發明係不被限定於此等。式中,Ra係表示H、CH3 、CH2 OH、CF3 或CN。Specific examples of (cy1) and (cy2) are given below, but the present invention is not limited thereto. In the formula, the Ra system represents H, CH 3 , CH 2 OH, CF 3 or CN.

以(cy3)、(cy4)而言,極性基係較佳為具有羥基或氰基之重複單元。藉此提升顯影液親和性。具有羥基或氰基之重複單元係較佳為經羥基或氰基取代之具有脂環烴構造之重複單元。經羥基或氰基取代之脂環烴構造中,以脂環烴構造而言,以金剛烷基、鑽石烷基、降莰基較佳。以較佳之經羥基或氰基取代之脂環烴構造而言,可舉出單羥基金剛烷基、二羥基金剛烷基、單羥基鑽石烷基、二羥基金剛烷基、經氰基取代的降莰基等。In the case of (cy3) or (cy4), the polar group is preferably a repeating unit having a hydroxyl group or a cyano group. Thereby enhancing the developer affinity. The repeating unit having a hydroxyl group or a cyano group is preferably a repeating unit having an alicyclic hydrocarbon structure substituted with a hydroxyl group or a cyano group. In the alicyclic hydrocarbon structure substituted by a hydroxyl group or a cyano group, an adamantyl group, a diamond alkyl group or a ruthenium group is preferable in terms of an alicyclic hydrocarbon structure. Preferred examples of the alicyclic hydrocarbon structure substituted by a hydroxyl group or a cyano group include a monohydroxyadamantyl group, a dihydroxyadamantyl group, a monohydroxy diamond alkyl group, a dihydroxyadamantyl group, and a cyano group-substituted lowering.莰基等.

以具有上述原子團的重複單元而言,可舉出由下述通式(CAIIa)至(CAIId)表示的重複單元。Examples of the repeating unit having the above atomic group include repeating units represented by the following general formulae (CAIIa) to (CAIId).

通式(CAIIa)至(CAIId)中,R1 c係表示氫原子、甲基、三氟甲基或羥甲基。In the general formulae (CAIIa) to (CAIId), R 1 c represents a hydrogen atom, a methyl group, a trifluoromethyl group or a hydroxymethyl group.

R2 c至R4 c係各自獨立地表示氫原子、羥基或氰基。但是、R2 c至R4 c之中之至少一個係表示羥基或氰基。較佳為R2 c至R4 c之中之一個或兩個為羥基,其餘為氫原子。通式(CAIIa)中,再更佳為R2 c至R4 c之中之兩個為羥基,其餘為氫原子。R 2 c to R 4 c each independently represent a hydrogen atom, a hydroxyl group or a cyano group. However, at least one of R 2 c to R 4 c represents a hydroxyl group or a cyano group. Preferably, one or both of R 2 c to R 4 c are a hydroxyl group, and the balance is a hydrogen atom. In the formula (CAIIa), it is more preferred that two of R 2 c to R 4 c are a hydroxyl group, and the balance is a hydrogen atom.

於下舉出由(cy3)、(cy4)表示的重複單元之具體例,但本發明係不被限定於此等。Specific examples of the repeating unit represented by (cy3) and (cy4) are given below, but the present invention is not limited thereto.

由(cy1)至(cy4)表示的重複單元之含有率係相對於樹脂(C)中之全部重複單元以5至40mol%為佳,更佳為5至30mol%,再更佳為10至25mol%。The content of the repeating unit represented by (cy1) to (cy4) is preferably 5 to 40 mol%, more preferably 5 to 30 mol%, still more preferably 10 to 25 mol, based on all the repeating units in the resin (C). %.

樹脂(C)係亦可具有多個由(cy1)至(cy4)表示的重複單元。The resin (C) may have a plurality of repeating units represented by (cy1) to (cy4).

樹脂(C)為具有氟原子之情況,氟原子之含有率係相對於樹脂(C)之分子量以5至80質量%為佳,以10至80質量%為更佳。又,含氟原子的重複單元為相對於樹脂(C)中之全部重複單元以10至100質量%為佳,以30至100質量%為更佳。When the resin (C) has a fluorine atom, the content of the fluorine atom is preferably from 5 to 80% by mass, more preferably from 10 to 80% by mass, based on the molecular weight of the resin (C). Further, the repeating unit of the fluorine atom is preferably from 10 to 100% by mass, more preferably from 30 to 100% by mass, based on all the repeating units in the resin (C).

樹脂(C)具有矽原子之情況,矽原子之含有率係相對於樹脂(C)之分子量以2至50質量%為佳,以2至30質量%為更佳。又,含矽原子的重複單元係相對於樹脂(C)之全部重複單元以10至90質量%為佳,以20至80質量%為更佳。The resin (C) has a ruthenium atom, and the content of the ruthenium atom is preferably 2 to 50% by mass, more preferably 2 to 30% by mass, based on the molecular weight of the resin (C). Further, the repeating unit containing a halogen atom is preferably from 10 to 90% by mass, more preferably from 20 to 80% by mass, based on the total of the repeating units of the resin (C).

樹脂(C)之標準聚苯乙烯換算之重量平均分子量係較佳為1,000至100,000,更佳為1,000至50,000,進一步更佳為2,000至15,000。The weight average molecular weight of the resin (C) in terms of standard polystyrene is preferably from 1,000 to 100,000, more preferably from 1,000 to 50,000, still more preferably from 2,000 to 15,000.

感光化射線或感放射線樹脂組成物中之樹脂(C)之含有率係可以感光化射線或感放射線樹脂膜之後退接觸角成為前述範圍的方式適當調整而使用,但以感光化射線或感放射線樹脂組成物之總固體成分作為基準,以0.01至10質量%為佳,更佳為0.1至9質量%,更佳為0.5至8質量%。The content of the resin (C) in the sensitized ray or the radiation-sensitive resin composition can be appropriately adjusted and used so that the sensitized ray or the radiation-sensitive resin film has a receding contact angle within the above range, but the sensitized ray or the sensitized radiation is used. The total solid content of the resin composition is preferably from 0.01 to 10% by mass, more preferably from 0.1 to 9% by mass, even more preferably from 0.5 to 8% by mass, based on the total solid content.

樹脂(C)係與後述之(A)成分之樹脂同樣,當然地金屬等之不純物為少,並且殘留單體或低聚物成分以0至10質量%為佳,更佳為0至5質量%,進一步更佳為0至1質量%。藉其,得到液中異物或感度等不歷時變化的光阻。又,從解像度、光阻形狀、光阻圖案之側壁、粗糙度等之方面看來,分子量分布(Mw/Mn,亦稱為分散度)係以1至3之範圍為佳,更佳為1至2,進一步較佳為1至1.8,最佳為1至1.5之範圍。The resin (C) is similar to the resin of the component (A) to be described later, and of course, the impurities such as metal are small, and the residual monomer or oligomer component is preferably 0 to 10% by mass, more preferably 0 to 5 by mass. %, further preferably from 0 to 1% by mass. By this, a photoresist which does not change over time such as foreign matter or sensitivity in the liquid is obtained. Further, the molecular weight distribution (Mw/Mn, also referred to as the degree of dispersion) is preferably in the range of 1 to 3, more preferably 1 in terms of resolution, photoresist shape, side wall of the resist pattern, roughness, and the like. Further, it is preferably from 1 to 1.8, and most preferably from 1 to 1.5.

樹脂(C)係亦可利用各種市售品,並可根據習知方法(例如自由基聚合)而合成。例如,以一般的合成方法而言,可舉出將單體物種及起始劑溶解於溶劑,藉由加熱進行聚合的一倂聚合法、於加熱溶劑以1至10小時滴入加入單體物種與起始劑之溶液的滴入聚合法等,以滴入聚合法較佳。以反應溶劑而言,例如四氫呋喃、1,4-二烷、二異丙醚等之醚類或甲基乙基酮、甲基異丁基酮之類的酮類、乙酸乙酯之類的酯溶劑、二甲基甲醯胺、二甲基乙醯胺等之醯胺溶劑、進一步後述之丙二醇單甲基醚乙酸酯(PGMEA)、丙二醇單甲基醚(PGME)、環己酮之類的溶解本發明之組成物之溶劑。更佳為使用與用於本發明之組成物之溶劑同樣的溶劑來聚合。藉此,可抑制保存時之粒子之產生。The resin (C) can also be used in various commercial products, and can be synthesized according to a conventional method (for example, radical polymerization). For example, in a general synthesis method, a monomer polymerization method in which a monomer species and an initiator are dissolved in a solvent, and polymerization is carried out by heating, and a monomeric species is added dropwise in a heating solvent for 1 to 10 hours. The dropwise addition polymerization method or the like of the solution of the initiator is preferred to the dropwise addition polymerization method. In terms of the reaction solvent, for example, tetrahydrofuran, 1,4-two An ether such as an alkane or a diisopropyl ether; a ketone such as methyl ethyl ketone or methyl isobutyl ketone; an ester solvent such as ethyl acetate; dimethylformamide or dimethylacetonitrile; A solvent such as a guanamine solvent such as an amine or a propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME) or cyclohexanone which will be described later, which dissolves the composition of the present invention. More preferably, it is polymerized using the same solvent as the solvent used in the composition of the present invention. Thereby, generation of particles during storage can be suppressed.

聚合反應係較佳為在氮或氬等惰性氣體環境下進行。以聚合起始劑而言使用市售之自由基起始劑(偶氮系起始劑、過氧化物等)來使聚合開始。以自由基起始劑而言較佳為偶氮系起始劑,較佳為酯基、氰基、具有羧基之偶氮系起始劑。以較佳之起始劑而言,可舉出偶氮雙異丁腈基、偶氮雙二甲基戊腈基、二甲基2,2’-偶氮雙(2-甲基丙酸酯)等。反應之濃度係通常為5至50質量%,較佳為10至30質量%。反應溫度係通常為10℃至150℃,較佳為30℃至120℃,進一步較佳為60至100℃。The polymerization reaction is preferably carried out under an inert gas atmosphere such as nitrogen or argon. A polymerization initiator is used to start polymerization by using a commercially available radical initiator (azo initiator, peroxide, etc.). The radical initiator is preferably an azo initiator, and is preferably an ester group, a cyano group or an azo initiator having a carboxyl group. Preferred examples of the initiator include azobisisobutyronitrile group, azobisdimethylvaleronitrile group, dimethyl 2,2'-azobis(2-methylpropionate), and the like. The concentration of the reaction is usually from 5 to 50% by mass, preferably from 10 to 30% by mass. The reaction temperature is usually from 10 ° C to 150 ° C, preferably from 30 ° C to 120 ° C, further preferably from 60 to 100 ° C.

反應結束後,放冷至室溫,並精製。精製係可施用藉由水洗或組合適合的溶劑而除去殘留單體或低聚物成分的液液萃取法、僅萃取除去特定之分子量以下者的超濾等在溶液狀態之精製方法或、將樹脂溶液滴入至貧溶劑以使樹脂於貧溶劑中凝固因而除去殘留單體等的再沈澱法或將經濾離的樹脂漿體以貧溶劑洗淨等之在固體狀態之精製方法等的普通的方法。例如,將上述樹脂所難溶或是不溶之溶劑(貧溶劑),以該反應溶液之10倍以下之體積量,較佳為10至5倍之體積量使其接觸因而將樹脂以固體析出。After the reaction was completed, it was allowed to cool to room temperature and purified. The refining method may be a liquid-liquid extraction method in which a residual monomer or an oligomer component is removed by washing with water or a suitable solvent, or a method of purifying in a solution state by extracting and removing only a specific molecular weight or less, or a resin. Ordinary method in which a solution is dropped into a poor solvent to solidify the resin in a poor solvent, a reprecipitation method for removing a residual monomer or the like, or a method of refining a solid state in which the filtered resin slurry is washed with a poor solvent or the like method. For example, a solvent (lean solvent) which is insoluble or insoluble in the above resin is brought into contact with a volume of 10 times or less, preferably 10 to 5 times the volume of the reaction solution, whereby the resin is precipitated as a solid.

以於從聚合物溶液沉澱或再沉澱操作之際使用的溶劑(沉澱或再沉澱溶劑)而言,只要是該聚合物之貧溶劑即可,根據聚合物之種類可從烴、鹵化烴、硝基化合物、醚、酮、酯、碳酸酯、醇、羧酸、水、含此等之溶劑的混合溶劑等之中適宜選擇使用。在此等之中,沉澱或再沉澱溶劑係較佳為至少含有醇(尤其甲醇等)或水的溶劑。For the solvent (precipitation or reprecipitation solvent) used in the precipitation or reprecipitation operation of the polymer solution, as long as it is a poor solvent of the polymer, it can be derived from hydrocarbons, halogenated hydrocarbons, and nitrates depending on the type of the polymer. The base compound, an ether, a ketone, an ester, a carbonate, an alcohol, a carboxylic acid, water, a mixed solvent containing a solvent, etc. are suitably used. Among these, the precipitation or reprecipitation solvent is preferably a solvent containing at least an alcohol (especially methanol or the like) or water.

沉澱或再沉澱溶劑之使用量係可考慮效率或產率等而適宜選擇,但一般相對於聚合物溶液100質量份為100至10000質量份,較佳為200至2000質量份,進一步較佳為300至1000質量份。The amount of the precipitating or reprecipitation solvent to be used may be appropriately selected in consideration of efficiency, productivity, etc., but is usually from 100 to 10,000 parts by mass, preferably from 200 to 2,000 parts by mass, more preferably from 100 parts by mass to the polymer solution. 300 to 1000 parts by mass.

以沉澱或再沉澱時之溫度而言,可考慮效率或操作性而適宜選擇,但通常為0至50℃左右,較佳為在室溫附近(例如20至35℃左右)。沉澱或再沉澱操作係可使用攪拌槽等之慣用之混合容器,以批次式、連續式等之習知之方法進行。The temperature at the time of precipitation or reprecipitation is suitably selected in consideration of efficiency or workability, but is usually about 0 to 50 ° C, preferably about room temperature (for example, about 20 to 35 ° C). The precipitation or reprecipitation operation can be carried out by a conventional method such as batch type, continuous type, or the like using a conventional mixing container such as a stirring tank.

經沉澱或再沉澱的聚合物係通常附加過濾、離心分離等之慣用之固液分離,並乾燥以供使用。過濾係使用耐溶劑性之濾材,較佳為在加壓下進行。乾燥係在常壓或減壓下(較佳為減壓下)、30至100℃左右,較佳為30至50℃左右之溫度進行。The precipitated or reprecipitated polymer is usually subjected to conventional solid-liquid separation such as filtration, centrifugation, etc., and dried for use. The filtration system uses a solvent-resistant filter medium, preferably under pressure. The drying is carried out under normal pressure or reduced pressure (preferably under reduced pressure) at a temperature of from about 30 to 100 ° C, preferably from about 30 to 50 ° C.

另外,一度使樹脂析出、分離後,再使其溶解於溶劑,亦可使該樹脂與難溶或是不溶之溶劑接觸。亦即,亦可為含以下步驟之方法:上述自由基聚合反應結束後,使該聚合物與難溶或是不溶之溶劑接觸,使樹脂析出(步驟a)、將樹脂從溶液分離(步驟b)、另使其溶解於溶劑調製樹脂溶液A(步驟c),其後,於該樹脂溶液A,將該樹脂難溶或是不溶之溶劑藉由以樹脂溶液A之少於10倍之體積量(較佳為5倍以下之體積量)使其接觸而使樹脂固體析出(步驟d)、分離經析出之樹脂(步驟e)。Further, once the resin is precipitated and separated, it is dissolved in a solvent, and the resin may be brought into contact with a solvent which is poorly soluble or insoluble. That is, it may be a method comprising the steps of: contacting the polymer with a poorly soluble or insoluble solvent after the radical polymerization reaction is completed, and precipitating the resin (step a), separating the resin from the solution (step b) And dissolving it in the solvent to prepare the resin solution A (step c), and thereafter, in the resin solution A, the solvent which is insoluble or insoluble in the resin is less than 10 times the volume of the resin solution A. (preferably, a volume of 5 times or less) is brought into contact to precipitate a resin solid (step d), and the precipitated resin is separated (step e).

表示樹脂(C)之具體例。又,於後示之表,表示各樹脂中之重複單元的莫耳比(與各重複單元從左依序對應)、重量平均分子量(Mw)、分散度(Mw/Mn)。A specific example of the resin (C) is shown. Moreover, the molar ratio of the repeating unit in each resin (corresponding to the order of each repeating unit from the left), the weight average molecular weight (Mw), and the degree of dispersion (Mw/Mn) are shown in the following table.

樹脂(C)係可單獨1種或組合2種以上來使用。The resin (C) may be used alone or in combination of two or more.

又,較佳為與不同於樹脂(C)、具有氟原子或矽原子之至少一者之樹脂(CP)組合來使用。Further, it is preferably used in combination with a resin (CP) different from the resin (C) and at least one of a fluorine atom or a ruthenium atom.

(CP)具有氟原子及矽原子之至少一者之樹脂(CP) a resin having at least one of a fluorine atom and a halogen atom

本發明之感光化射線性或感放射線性樹脂組成物係亦可進一步含有上述樹脂(C)以外的具有氟原子及矽原子之至少一者之樹脂(CP)。藉由含有前述樹脂(C)‧樹脂(CP),於膜表層不均化樹脂(C)‧樹脂(CP)、液浸介質為水之情況,可提升作成膜時之對於水之光阻膜表面之後退接觸角、提升液浸水跟隨性。膜之後退接觸角係以60°至90°為佳,進一步較佳為70°以上。樹脂(CP)之含有率係可使膜之後退接觸角成為前述範圍地適宜調整而使用,但以感光化射線性或感放射線性樹脂組成物之總固體成分作為基準,較佳為0.01至10質量%,更佳為0.01至5質量%,進一步較佳為0.01至4質量%,特佳為0.01至3質量%。The sensitizing ray-sensitive or radiation-sensitive resin composition of the present invention may further contain a resin (CP) having at least one of a fluorine atom and a ruthenium atom other than the above resin (C). When the resin (C) ‧ resin (CP) is contained, the resin (C) ‧ resin (CP) and the liquid immersion medium are water in the surface layer of the film, and the water-resistant film for water formation can be improved. Surface receding contact angle, lifting fluid immersion followability. The film receding contact angle is preferably 60 to 90, and more preferably 70 or more. The content of the resin (CP) is appropriately adjusted so that the film receding contact angle is within the above range, but it is preferably 0.01 to 10 based on the total solid content of the sensitizing ray-sensitive or radiation-sensitive resin composition. The mass% is more preferably 0.01 to 5% by mass, still more preferably 0.01 to 4% by mass, particularly preferably 0.01 to 3% by mass.

樹脂(CP)係如前述一般於界面不均者,但與界面活性劑不同,沒有於分子內具有親水基之必要,亦可對均一地混合極性/非極性物質沒有貢獻。The resin (CP) is generally not uniform in the interface as described above, but unlike the surfactant, it does not have a hydrophilic group in the molecule, and it does not contribute to the uniform mixing of the polar/nonpolar substance.

具有氟原子及矽原子之至少一者的樹脂(CP)中,氟原子或矽原子係可具有於樹脂之主鏈中,亦可取代於側鏈。In the resin (CP) having at least one of a fluorine atom and a ruthenium atom, the fluorine atom or the ruthenium atom may be contained in the main chain of the resin or may be substituted for the side chain.

樹脂(CP)係,作為具有氟原子之部分構造較佳為具有氟原子之烷基、具有氟原子之環烷基、或具有氟原子之芳基的樹脂。The resin (CP) is a resin having a fluorine atom, preferably an alkyl group having a fluorine atom, a cycloalkyl group having a fluorine atom, or an aryl group having a fluorine atom.

具有氟原子之烷基(較佳為碳數1至10、更佳為碳數1至4)係為至少一個之氫原子經氟原子取代之直鏈或分枝烷基,進一步亦可具有其他之取代基。The alkyl group having a fluorine atom (preferably having 1 to 10 carbon atoms, more preferably 1 to 4 carbon atoms) is a linear or branched alkyl group in which at least one hydrogen atom is substituted with a fluorine atom, and may further have other Substituent.

具有氟原子之環烷基係為至少一個之氫原子經氟原子取代之單環或多環之環烷基,亦可進一步具有其他之取代基。The cycloalkyl group having a fluorine atom is a monocyclic or polycyclic cycloalkyl group in which at least one hydrogen atom is substituted by a fluorine atom, and may further have other substituents.

以具有氟原子之芳基而言,可舉出苯基、萘基等之芳基之至少一個之氫原子經氟原子取代者,進一步亦可具有其他之取代基。In the case of the aryl group having a fluorine atom, at least one hydrogen atom of an aryl group such as a phenyl group or a naphthyl group may be substituted with a fluorine atom, and further may have other substituents.

具有氟原子之烷基、具有氟原子之環烷基、或具有氟原子之芳基係可舉出較佳為前述樹脂(C)中之由通式(F2)至(F4)表示之基,但本發明係不為限定於此者。The alkyl group having a fluorine atom, the cycloalkyl group having a fluorine atom, or the aryl group having a fluorine atom is preferably a group represented by the formulae (F2) to (F4) in the above resin (C). However, the present invention is not limited thereto.

本發明中,由通式(F2)至(F4)表示之基係較佳為包含於(甲基)丙烯酸系重複單元。In the present invention, the group represented by the general formulae (F2) to (F4) is preferably contained in a (meth)acrylic repeating unit.

以下表示具有氟原子之重複單元之具體例,但本發明係不為限定於此者。Specific examples of the repeating unit having a fluorine atom are shown below, but the present invention is not limited thereto.

具體例中,X1 係表示氫原子、-CH3 、-F或-CF3In a specific example, X 1 represents a hydrogen atom, -CH 3 , -F or -CF 3 .

X2 係表示-F或-CF3X 2 represents -F or -CF 3 .

樹脂(CP)係,作為具有矽原子之部分構造,較佳為具有烷矽烷基構造(較佳為三烷矽烷基)、或環狀矽氧烷構造的樹脂。The resin (CP) is preferably a resin having a structure of a ruthenium atom, and preferably has a structure of an alkylene group (preferably a trialkane group) or a cyclic siloxane.

以烷矽烷基構造、或環狀矽氧烷構造而言,具體而言,可舉出前述樹脂(C)中之由通式(CS-1)至(CS-3)表示之基等。Specifically, the alkylene group structure or the cyclic oxime structure is a group represented by the general formulae (CS-1) to (CS-3) in the above resin (C).

再者,樹脂(CP)係亦可具有進一步從下述(x)及(z)之群組選擇之至少一個基。(x)鹼可溶性基、(z)藉由酸之作用分解之基。Further, the resin (CP) may have at least one selected from the group of (x) and (z) below. (x) an alkali-soluble group, (z) a group decomposed by the action of an acid.

此等之基係具體舉出與於上述樹脂(C)中者同樣之基。The basis of these is specifically the same as those in the above resin (C).

樹脂(CP)中,具有藉由酸之作用分解之基(z)的重複單元係、舉出與具有在後述(A)成分之樹脂舉出之酸分解性基的重複單元同樣者。樹脂(CP)中,具有藉由酸之作用分解之基(z)重複單元之含有率係相對於樹脂(CP)中之全部重複單元,以1至80mol%為佳,更佳為10至80mol%,再更佳為20至60mol%。In the resin (CP), a repeating unit having a group (z) decomposed by an action of an acid is the same as a repeating unit having an acid-decomposable group exemplified by a resin of the component (A) described later. In the resin (CP), the content of the radical (z) repeating unit which is decomposed by the action of an acid is preferably from 1 to 80 mol%, more preferably from 10 to 80 mol, based on all the repeating units in the resin (CP). More preferably, it is 20 to 60 mol%.

樹脂(CP)係進一步亦可具有前述樹脂(C)中之由通式(CIII)表示之重複單元。The resin (CP) may further have a repeating unit represented by the formula (CIII) in the above-mentioned resin (C).

樹脂(CP)具有氟原子之情況,氟原子之含有率係相對於樹脂(CP)之分子量,以5至80質量%為佳,以10至80質量%為更佳。又,含氟原子之重複單元相對於樹脂(CP)中之全部重複單元以10至100質量%為佳,以30至100質量%為更佳。The resin (CP) has a fluorine atom, and the content of the fluorine atom is preferably from 5 to 80% by mass, more preferably from 10 to 80% by mass, based on the molecular weight of the resin (CP). Further, the repeating unit of the fluorine-containing atom is preferably from 10 to 100% by mass, more preferably from 30 to 100% by mass, based on the total of the repeating units in the resin (CP).

樹脂(CP)具有矽原子之情況,矽原子之含有率係相對於樹脂(CP)之分子量以2至50質量%為佳,以2至30質量%為更佳。又,含矽原子之重複單元係相對於樹脂(CP)之全部重複單元,以10至100質量%為佳,以20至100質量%為更佳。The resin (CP) has a ruthenium atom, and the content of the ruthenium atom is preferably 2 to 50% by mass, more preferably 2 to 30% by mass, based on the molecular weight of the resin (CP). Further, the repeating unit containing a halogen atom is preferably from 10 to 100% by mass, more preferably from 20 to 100% by mass, based on the total of the repeating units of the resin (CP).

樹脂(CP)之標準聚苯乙烯換算之重量平均分子量係較佳為1,000至100,000,更佳為1,000至50,000,進一步更佳為2,000至15,000。The standard polystyrene-equivalent weight average molecular weight of the resin (CP) is preferably from 1,000 to 100,000, more preferably from 1,000 to 50,000, still more preferably from 2,000 to 15,000.

樹脂(CP)係與(A)成分之樹脂同樣,當然地金屬等之不純物為少,並且殘留單體或低聚物成分較佳為0至10質量%,更佳為0至5質量%,進一步更佳為0至1質量%。藉其,可得液中異物或感度等不歷時變化之感光化射線性或感放射線性樹脂組成物。又,從解像度、光阻形狀、光阻圖案之側壁、粗糙度等之點來看,分子量分布(Mw/Mn,亦以分散度言之)係較佳為1至3之範圍,更佳為1至2,進一步較佳為1至1.8,最佳為1至1.5之範圍。The resin (CP) is similar to the resin of the component (A). Of course, the impurities such as metal are small, and the residual monomer or oligomer component is preferably from 0 to 10% by mass, more preferably from 0 to 5% by mass. Further preferably, it is 0 to 1% by mass. By this, it is possible to obtain a sensitized ray-sensitive or radiation-sensitive resin composition which does not change over time, such as foreign matter or sensitivity in the liquid. Further, from the viewpoints of the resolution, the shape of the photoresist, the side wall of the photoresist pattern, the roughness, and the like, the molecular weight distribution (Mw/Mn, also in terms of dispersion) is preferably in the range of 1 to 3, more preferably 1 to 2, further preferably 1 to 1.8, most preferably 1 to 1.5.

樹脂(CP)係亦可利用各種市售品,可根據習知方法(例如自由基聚合)合成。具體而言,可與前述樹脂(C)同樣地合成。The resin (CP) can also be used in various commercial products, and can be synthesized according to a conventional method (for example, radical polymerization). Specifically, it can be synthesized in the same manner as the above-mentioned resin (C).

以下表示具有氟原子及矽原子之至少一者之樹脂(CP)之具體例。又,於後示之表,表示各樹脂中之重複單元之莫耳比(與各重複單元從左依序對應)、重量平均分子量(Mw)、分散度(Mw/Mn)。Specific examples of the resin (CP) having at least one of a fluorine atom and a ruthenium atom are shown below. Moreover, the molar ratio of the repeating unit in each resin (corresponding to the order of each repeating unit from the left), the weight average molecular weight (Mw), and the degree of dispersion (Mw/Mn) are shown in the following table.

關於由本發明之感光化射線性或感放射線性樹脂組成物形成之膜,於照射光化射線或放射線時,亦可於膜與透鏡之間充滿折射率比空氣高的液體(液浸介質)而進行曝光(液浸曝光)。藉此可提高解像性。以所使用之液浸介質而言只要是折射率比空氣高的液體任一者皆可使用,但較佳為純水。The film formed of the sensitized ray-sensitive or radiation-sensitive resin composition of the present invention may be filled with a liquid having a higher refractive index than air (liquid immersion medium) between the film and the lens when irradiating actinic rays or radiation. Exposure (liquid immersion exposure). This can improve the resolution. As the liquid immersion medium to be used, any liquid having a higher refractive index than air can be used, but it is preferably pure water.

針對於液浸曝光之際使用的液浸液,說明於下。The liquid immersion liquid used for the immersion exposure will be described below.

液浸液係對於曝光波長為透明,且較佳為將投影於膜上之光學影像之形變最小限度地保留,且折射率之溫度係數為盡可能地小的液體,尤其於曝光光源為ArF準分子雷射(波長;193nm)的情況,復加於上述之觀點,以取得容易度、操作難易度之論點來說,使用水者為較佳。The liquid immersion liquid is transparent to the exposure wavelength, and preferably retains the deformation of the optical image projected on the film to a minimum, and the temperature coefficient of the refractive index is as small as possible, especially for the exposure source. In the case of a molecular laser (wavelength; 193 nm), the above-mentioned viewpoint is added, and in terms of ease of use and ease of operation, it is preferable to use water.

又,以可進一步提升折射率之論點,亦可使用折射率1.5以上之介質。此介質係可為水溶液亦可為有機溶劑。Further, in the case where the refractive index can be further increased, a medium having a refractive index of 1.5 or more can also be used. The medium may be an aqueous solution or an organic solvent.

作為液浸液使用水的情況,使水的表面張力減少的同時,為了增大界面活性力,不將晶圓上之光阻膜溶解,且亦可以些微的比例添加可無視對於透鏡元件之下面之光學覆膜之影響的添加劑(液體)。以其添加劑而言較佳為具有與水差不多相等之折射率脂肪族系之醇,具體舉出甲醇、乙醇、異丙醇等。藉由添加具有與水差不多相等之折射率的醇,可得到即使蒸發水中之醇成分變化含有濃度,作為液體全體之折射率變化可變為極小的有利點。另一方面,混入了對於193nm光為不透明的物質或折射率與水大不相同的不純物之情況,為了招致被投影於光阻膜上的光學影像之形變,以使用之水而言,蒸餾水較佳。亦可進一步通過離子交換濾材等進行過濾純水而使用。When water is used as the liquid immersion liquid, the surface tension of the water is reduced, and in order to increase the interfacial activity, the photoresist film on the wafer is not dissolved, and may be added in a slight proportion to ignore the underside of the lens element. An additive (liquid) affected by the optical coating. The additive is preferably an aliphatic alcohol having a refractive index substantially equal to that of water, and specific examples thereof include methanol, ethanol, and isopropanol. By adding an alcohol having a refractive index almost equal to that of water, it is possible to obtain a concentration in which the change in the refractive index of the entire liquid is extremely small even if the concentration of the alcohol component in the evaporated water is changed. On the other hand, in the case where a substance which is opaque to 193 nm light or an impurity which is different in refractive index from water is mixed, in order to cause deformation of an optical image projected on the photoresist film, distilled water is used in terms of water to be used. good. Further, it may be used by filtering pure water by an ion exchange filter or the like.

水之電阻係以18.3MQcm以上為理想,TOC(有機物濃度)係以20ppb以下為理想,以進行脫氣處理為理想。The electric resistance of the water is preferably 18.3 Mcm or more, and the TOC (organic matter concentration) is preferably 20 ppb or less, and it is preferable to carry out degassing treatment.

又,藉由提高液浸液之折射率,可提高微影性能。從如此之觀點來看,亦可將提高折射率的添加劑加入水中,且使用重水(D2 O)代替水。Moreover, by increasing the refractive index of the liquid immersion liquid, the lithography performance can be improved. From such a viewpoint, an additive for increasing the refractive index can also be added to water, and heavy water (D 2 O) can be used instead of water.

於本發明之組成物形成之膜與液浸液之間,為了使膜不直接接觸於液浸液,亦可設置液浸液難溶性膜(以下亦以「表面塗膜」(topcoat)言之)。以於表面塗膜所需要的機能而言,為至膜之上層部之塗布合理、對於放射線,尤其193nm的透明性、液浸液難溶性。表面塗膜係不與光阻混合,較佳為進一步可均一地塗布於光阻上層。Between the film formed by the composition of the present invention and the liquid immersion liquid, in order to prevent the film from directly contacting the liquid immersion liquid, a liquid immersion liquid poorly soluble film may be provided (hereinafter also referred to as "topcoat"). ). In terms of the function required for the surface coating film, the coating to the upper layer of the film is reasonable, and the transparency to the radiation, especially 193 nm, and the poor solubility of the liquid immersion liquid. The surface coating film is not mixed with the photoresist, and is preferably further uniformly applied to the upper layer of the photoresist.

表面塗膜係以193nm透明性這樣的觀點來看係較佳為不多含芳香族的聚合物,具體而言,可舉出烴聚合物、丙烯酸酯聚合物、聚甲基丙烯酸、聚丙烯酸、聚乙烯基醚、含矽聚合物、含氟聚合物等。前述之疏水性樹脂(C)及(CP)係作為表面塗膜亦佳之者。若從表面塗膜溶出不純物至液浸液則汚染光學透鏡這樣的觀點來看,係含於表面塗膜之聚合物之殘留單體成分較少較佳。The surface coating film is preferably a polymer containing no aromatics from the viewpoint of transparency at 193 nm, and specific examples thereof include a hydrocarbon polymer, an acrylate polymer, polymethacrylic acid, and polyacrylic acid. Polyvinyl ether, ruthenium containing polymer, fluoropolymer, and the like. The above-mentioned hydrophobic resins (C) and (CP) are also preferable as a surface coating film. From the viewpoint of contaminating the optical lens from the surface coating film to dissolve the impurity to the liquid immersion liquid, the residual monomer component of the polymer contained in the surface coating film is less preferred.

剝離表面塗膜時係亦可使用顯影液,另亦可使用剝離劑。以剝離劑而言,較佳為至膜之浸透為小的溶劑。在剝離步驟可與膜之顯影處理步驟同時進行這樣的論點,較佳為可藉由鹼顯影液剝離。從以鹼顯影液剝離這樣的觀點來看,表面塗膜係酸性較佳,但從與膜之非混合性之觀點來看,可為中性亦可為鹼性。A developer may be used when peeling off the surface coating film, and a release agent may also be used. In the case of the release agent, it is preferred that the film is impregnated with a small solvent. The argument can be carried out simultaneously with the development treatment step of the film in the stripping step, preferably by stripping with an alkali developer. The surface coating film is preferably acidic from the viewpoint of being peeled off by the alkali developing solution, but may be neutral or alkaline from the viewpoint of non-mixing property with the film.

於表面塗膜與液浸液之間沒有折射率之差之一方,解像力提升。ArF準分子雷射(波長:193nm)中,於作為液浸液使用水的情況,ArF液浸曝光用表面塗膜係較佳為與液浸液之折射率相近。從折射率與液浸液相近這樣的觀點來看係較佳為於表面塗膜中具有氟原子。又,從透明性‧折射率之觀點來看較佳為薄膜之一方。There is no difference in refractive index between the surface coating film and the liquid immersion liquid, and the resolution is improved. In the ArF excimer laser (wavelength: 193 nm), when water is used as the liquid immersion liquid, the surface coating film for ArF immersion exposure is preferably similar to the refractive index of the liquid immersion liquid. From the viewpoint of the refractive index and the liquid immersion liquid phase, it is preferred to have a fluorine atom in the surface coating film. Further, from the viewpoint of transparency and refractive index, it is preferably one of the films.

表面塗膜係不與膜混合,較佳為進一步亦不與液浸液混合。從此觀點來看,於液浸液為水之情況,於表面塗膜使用之溶劑係較佳為難溶於使用於本發明之組成物的溶劑,且為非水溶性之介質。進一步於液浸液為有機溶劑之情況,表面塗膜係可為水溶性亦可為非水溶性。The surface coating film is not mixed with the film, and is preferably further not mixed with the liquid immersion liquid. From this point of view, in the case where the liquid immersion liquid is water, the solvent used for the surface coating film is preferably a solvent which is hardly soluble in the composition used in the present invention, and is a water-insoluble medium. Further, in the case where the liquid immersion liquid is an organic solvent, the surface coating film may be water-soluble or water-insoluble.

[鹼性化合物][alkaline compound]

本發明之組成物係為了減低從曝光到加熱之歷時性能變化,較佳為含有鹼性化合物。The composition of the present invention preferably contains a basic compound in order to reduce the change in performance over the period from exposure to heating.

以鹼性化合物而言,可舉出較佳為具有由下述式(A)至(E)表示之構造的化合物。The basic compound is preferably a compound having a structure represented by the following formulas (A) to (E).

通式(A)及(E)中,R200 、R201 及R202 係可相同亦可不同,表示氫原子、烷基(較佳為碳數1至20)、環烷基(較佳為碳數3至20)或芳基(碳數6至20),在此,R201 與R202 係亦可互相結合形成環。R203 、R204 、R205 及R206 係可相同亦可不同,表示碳數1至20個之烷基。In the general formulae (A) and (E), R 200 , R 201 and R 202 may be the same or different and each represent a hydrogen atom, an alkyl group (preferably having a carbon number of 1 to 20), or a cycloalkyl group (preferably The carbon number is 3 to 20) or the aryl group (carbon number is 6 to 20), and here, R 201 and R 202 may be bonded to each other to form a ring. R 203 , R 204 , R 205 and R 206 may be the same or different and each represents an alkyl group having 1 to 20 carbon atoms.

關於上述烷基,以具有取代基之烷基而言,較佳為碳數1至20之胺基烷基、碳數1至20之羥基烷基、或碳數1至20之氰基烷基。With respect to the above alkyl group, the alkyl group having a substituent is preferably an aminoalkyl group having 1 to 20 carbon atoms, a hydroxyalkyl group having 1 to 20 carbon atoms, or a cyanoalkyl group having 1 to 20 carbon atoms. .

此等通式(A)及(E)中之烷基係更佳為無取代。The alkyl group in these general formulae (A) and (E) is more preferably unsubstituted.

作為較佳之化合物,可舉出胍、胺基吡咯啶、吡唑、吡唑啉、哌、胺基啉、胺基烷啉、哌啶等,作為進一步較佳化合物,可舉出具有咪唑構造、二吖雙環構造、氫氧化鎓構造、羧酸鎓構造、三烷基胺構造、苯胺構造或吡啶構造的化合物、具有羥基及/或醚鍵的烷基胺衍生物、具有羥基及/或醚鍵的苯胺衍生物等。Preferred examples of the compound include anthracene, aminopyrrolidine, pyrazole, pyrazoline, and piperazine. Amino group Porphyrin Examples of a further preferred compound include a compound having an imidazole structure, a dioxonium structure, a cesium hydroxide structure, a carboxylic acid hydrazine structure, a trialkylamine structure, an aniline structure or a pyridine structure, and a hydroxyl group. And/or an alkylamine derivative of an ether bond, an aniline derivative having a hydroxyl group and/or an ether bond, or the like.

以具有咪唑構造的化合物而言舉出咪唑、2、4、5-三苯咪唑、苯并咪唑、2-苯基苯并咪唑等。以具有二吖雙環構造的化合物而言舉出1、4-二吖雙環[2,2,2]辛烷、1、5-二吖雙環[4,3,0]壬-5-烯、1、8-二吖雙環[5,4,0]十一-7-烯等。以具有氫氧化鎓構造的化合物而言舉出氫氧化四丁基銨、氫氧化三芳基鋶、氫氧化苯甲醯甲基鋶、具有2-側氧烷基的鋶氫氧化物,具體而言舉出氫氧化三苯基鋶、氫氧化參(三級丁基苯)鋶、氫氧化雙(三級丁基苯)錪、氫氧化苯甲醯甲基硫苯鎓、氫氧化2-側氧丙硫苯鎓等。以具有羧酸鎓構造的化合物而言為具有氫氧化鎓構造的化合物之陰離子部成為羧酸酯者,可舉出例如乙酸酯、金剛烷-1-羧酸酯、全氟烷基羧酸酯等。以具有三烷基胺構造的化合物而言,可舉出三(正丁基)胺、三(正辛基)胺等。以苯胺化合物而言,可舉出2,6-二異丙基苯胺、N,N-二甲基苯胺、N,N-二丁基苯胺、N,N-二己基苯胺等。以具有羥基及/或醚鍵之烷基胺衍生物而言,可舉出乙醇胺、二乙醇胺、三乙醇胺、正苯二乙醇胺、參(甲氧基乙氧基乙基)胺等。以具有羥基及/或醚鍵的苯胺衍生物而言,可舉出N,N-雙(羥乙基)苯胺等。Examples of the compound having an imidazole structure include imidazole, 2, 4, 5-tribenzimidazole, benzimidazole, 2-phenylbenzimidazole, and the like. In the case of a compound having a diterpene bicyclic structure, 1, 4-dibicyclo[2,2,2]octane, 1,5-dioxabicyclo[4,3,0]non-5-ene, 1 , 8-diindole bicyclo[5,4,0]undec-7-ene, and the like. Examples of the compound having a ruthenium hydroxide structure include tetrabutylammonium hydroxide, triarylsulfonium hydroxide, benzamidine methylhydrazine hydroxide, and a phosphonium hydroxide having a 2-sided oxyalkyl group, specifically Illustrative examples include triphenylsulfonium hydroxide, hydrazine hydroxide (tertiary butylbenzene) hydrazine, bis(tributylbenzene) hydrazine hydroxide, benzamidine methyl thiobenzoate, and 2-oxo hydroxide Propanethione and the like. In the case of a compound having a ruthenium carboxylate structure, the anion portion of the compound having a ruthenium hydroxide structure may be a carboxylic acid ester, and examples thereof include acetate, adamantane-1-carboxylate, and perfluoroalkylcarboxylic acid. Ester and the like. Examples of the compound having a trialkylamine structure include tri(n-butyl)amine and tri(n-octyl)amine. Examples of the aniline compound include 2,6-diisopropylaniline, N,N-dimethylaniline, N,N-dibutylaniline, and N,N-dihexylaniline. Examples of the alkylamine derivative having a hydroxyl group and/or an ether bond include ethanolamine, diethanolamine, triethanolamine, n-phenylenediethanolamine, and methoxy(methoxyethoxyethyl)amine. The aniline derivative having a hydroxyl group and/or an ether bond may, for example, be N,N-bis(hydroxyethyl)aniline or the like.

作為較佳之鹼性化合物,進一步可舉出具有苯氧基之胺化合物、具有苯氧基之銨鹽化合物、具有磺酸酯基之胺化合物及具有磺酸酯基之銨鹽化合物。Further, preferred examples of the basic compound include an amine compound having a phenoxy group, an ammonium salt compound having a phenoxy group, an amine compound having a sulfonate group, and an ammonium salt compound having a sulfonate group.

胺化合物係可使用1級、2級、3級之胺化合物,較佳為至少一個之烷基鍵結於氮原子的胺化合物。胺化合物係更佳為3級胺化合物。胺化合物係若至少一個烷基(較佳為碳數1至20)鍵結於氮原子,則除了烷基以外亦可鍵結環烷基(較佳為碳數3至20)或芳基(較佳為碳數6至12)至氮原子。胺化合物係較佳為於烷鏈中具有氧原子,並形成了氧伸烷基。氧伸烷基之數係於分子內為一個以上、較佳為3至9個、進一步較佳為4至6個。在氧伸烷基之中以氧伸乙基(-CH2 CH2 O-)或是氧伸丙基(-CH(CH3 )CH2 O-或是-CH2 CH2 CH2 O-)為佳,進一步較佳為氧伸乙基。As the amine compound, an amine compound of a first order, a second order, or a third order may be used, and an amine compound in which at least one alkyl group is bonded to a nitrogen atom is preferred. The amine compound is more preferably a tertiary amine compound. The amine compound may be bonded to a cycloalkyl group (preferably having a carbon number of 3 to 20) or an aryl group in addition to the alkyl group if at least one alkyl group (preferably having a carbon number of 1 to 20) is bonded to the nitrogen atom. It is preferably a carbon number of 6 to 12) to a nitrogen atom. The amine compound preferably has an oxygen atom in the alkyl chain and forms an oxygen alkyl group. The number of oxygen alkyl groups is one or more, preferably 3 to 9, more preferably 4 to 6 in the molecule. Among the oxygen alkyl groups, an ethyl group (-CH 2 CH 2 O-) or an oxygen-extended propyl group (-CH(CH 3 )CH 2 O- or -CH 2 CH 2 CH 2 O-) More preferably, it is preferably an oxygen-extended ethyl group.

銨鹽化合物係可使用1級、2級、3級、4級之銨鹽化合物,較佳為至少一個烷基鍵結於氮原子的銨鹽化合物。銨鹽化合物係若至少一個烷基(較佳為碳數1至20)鍵結於氮原子,則除了烷基以外亦可鍵結環烷基(較佳為碳數3至20)或芳基(較佳為碳數6至12)至氮原子。銨鹽化合物係較佳為於烷鏈中具有氧原子並形成有氧伸烷基。氧伸烷基之數係於分子內為一個以上,較佳為3至9個,進一步較佳為4至6個。在氧伸烷基之中以氧伸乙基(-CH2 CH2 O-)或是氧伸丙基(-CH(CH3 )CH2 O-或是-CH2 CH2 CH2 O-)為佳,進一步較佳為氧伸乙基。以銨鹽化合物之陰離子而言,可舉出鹵素原子、磺酸鹽、硼酸鹽、磷酸鹽等,但其中以鹵素原子、磺酸鹽較佳。以鹵素原子而言特佳為氯化物、溴化物、碘化物,以磺酸鹽而言,碳數1至20之有機磺酸鹽為特佳。以有機磺酸鹽而言,可舉出碳數1至20之烷磺酸鹽、芳磺酸鹽。烷磺酸鹽之烷基係亦可具有取代基,以取代基而言舉出例如氟、氯、溴、烷氧基、醯基、芳基等。作為烷磺酸鹽,具體舉出甲烷磺酸鹽、乙烷磺酸鹽、丁烷磺酸鹽、己烷磺酸鹽、辛烷磺酸鹽、苄磺酸鹽、三氟甲烷磺酸鹽、五氟乙烷磺酸鹽、九氟丁烷磺酸鹽等。以芳基磺酸鹽之芳基而言舉出苯環、萘環、蒽環。苯環、萘環、蒽環係亦可具有取代基,以取代基而言較佳為碳數1至6之直鏈或分枝烷基、碳數3至6之環烷基。作為直鏈或分枝烷基、環烷基,具體舉出甲基、乙基、正丙基、異丙基、正丁基、異丁基、三級丁基、正己基、環己基等。以其他之取代基而言舉出碳數1至6之烷氧基、鹵素原子、氰、硝、醯基、醯氧基等。As the ammonium salt compound, an ammonium salt compound of the first, second, third, and fourth grades may be used, and an ammonium salt compound in which at least one alkyl group is bonded to a nitrogen atom is preferred. When the ammonium salt compound is bonded to the nitrogen atom by at least one alkyl group (preferably having 1 to 20 carbon atoms), a cycloalkyl group (preferably having a carbon number of 3 to 20) or an aryl group may be bonded in addition to the alkyl group. (preferably from 6 to 12 carbon atoms) to a nitrogen atom. The ammonium salt compound preferably has an oxygen atom in the alkyl chain and forms an oxygen-extended alkyl group. The number of oxygen alkyl groups is more than one in the molecule, preferably from 3 to 9, more preferably from 4 to 6. Among the oxygen alkyl groups, an ethyl group (-CH 2 CH 2 O-) or an oxygen-extended propyl group (-CH(CH 3 )CH 2 O- or -CH 2 CH 2 CH 2 O-) More preferably, it is preferably an oxygen-extended ethyl group. The anion of the ammonium salt compound may, for example, be a halogen atom, a sulfonate, a borate or a phosphate, but among them, a halogen atom or a sulfonate is preferred. Particularly preferred as the halogen atom is a chloride, a bromide or an iodide, and in the case of a sulfonate, an organic sulfonate having a carbon number of 1 to 20 is particularly preferred. The organic sulfonate may, for example, be an alkanesulfonate or an arylsulfonate having 1 to 20 carbon atoms. The alkyl group of the alkanesulfonate may have a substituent, and examples of the substituent include fluorine, chlorine, bromine, alkoxy, decyl, aryl and the like. Specific examples of the alkanesulfonate include methanesulfonate, ethanesulfonate, butanesulfonate, hexanesulfonate, octanesulfonate, benzylsulfonate, trifluoromethanesulfonate, Pentafluoroethane sulfonate, nonafluorobutane sulfonate, and the like. The aryl group of the aryl sulfonate is a benzene ring, a naphthalene ring or an anthracene ring. The benzene ring, the naphthalene ring, and the anthracene ring may have a substituent, and the substituent is preferably a linear or branched alkyl group having 1 to 6 carbon atoms or a cycloalkyl group having 3 to 6 carbon atoms. Specific examples of the linear or branched alkyl group and the cycloalkyl group include a methyl group, an ethyl group, a n-propyl group, an isopropyl group, a n-butyl group, an isobutyl group, a tertiary butyl group, a n-hexyl group, and a cyclohexyl group. Examples of the other substituent include an alkoxy group having 1 to 6 carbon atoms, a halogen atom, a cyanogen, a nitrate, a decyl group, a decyloxy group and the like.

所謂具有苯氧基之胺化合物、具有苯氧基之銨鹽化合物,為於胺化合物或銨鹽化合物之烷基之與氮原子相反側之末端具有苯氧基者。苯氧基亦可具有取代基。以苯氧基之取代基而言,可舉出例如烷基、烷氧基、鹵素原子、氰基、硝基、羧基、羧酸酯基、磺酸酯基、芳基、芳烷基、醯氧基、芳氧基等。取代基之取代位係可為2至6位之任一者。取代基之數係在1至5之範圍何者皆可。The amine compound having a phenoxy group and the ammonium salt compound having a phenoxy group are those having a phenoxy group at the terminal on the opposite side to the nitrogen atom of the alkyl group of the amine compound or the ammonium salt compound. The phenoxy group may also have a substituent. Examples of the substituent of the phenoxy group include an alkyl group, an alkoxy group, a halogen atom, a cyano group, a nitro group, a carboxyl group, a carboxylate group, a sulfonate group, an aryl group, an aralkyl group, and an anthracene group. Oxyl, aryloxy, and the like. The substituent of the substituent may be any of the 2 to 6 positions. The number of substituents is in the range of 1 to 5.

於苯氧基與氮原子之間,較佳為具有至少一個氧伸烷基。氧伸烷基之數係於分子內為一個以上,較佳為3至9個,進一步較佳為4至6個。在氧伸烷基之中以氧伸乙基(-CH2 CH2 O-)或是氧伸丙基(-CH(CH3 )CH2 O-或是-CH2 CH2 CH2 O-)為佳,進一步較佳為氧伸乙基。Between the phenoxy group and the nitrogen atom, it is preferred to have at least one oxygen alkyl group. The number of oxygen alkyl groups is more than one in the molecule, preferably from 3 to 9, more preferably from 4 to 6. Among the oxygen alkyl groups, an ethyl group (-CH 2 CH 2 O-) or an oxygen-extended propyl group (-CH(CH 3 )CH 2 O- or -CH 2 CH 2 CH 2 O-) More preferably, it is preferably an oxygen-extended ethyl group.

在磺酸酯基具有胺化合物、磺酸酯基具有銨鹽化合物中,以磺酸酯基而言,烷基磺酸酯、環烷基磺酸酯、芳基磺酸酯之任一者皆可,於烷基磺酸酯情況烷基係較佳為碳數1至20,於環烷磺酸酯之情況環烷基係較佳為碳數3至20,於芳磺酸酯之情況芳基係較佳為碳數6至12。烷基磺酸酯、環烷基磺酸酯、芳基磺酸酯亦可具有取代基,以取代基而言,較佳為鹵素原子、氰基、硝基、羧基、羧酸酯基、磺酸酯基。In the case where the sulfonate group has an amine compound and the sulfonate group has an ammonium salt compound, in the case of a sulfonate group, any of an alkyl sulfonate, a cycloalkyl sulfonate, and an aryl sulfonate The alkyl group is preferably a carbon number of 1 to 20 in the case of an alkyl sulfonate, and preferably a carbon number of 3 to 20 in the case of a naphthenic acid sulfonate. The basis is preferably from 6 to 12 carbon atoms. The alkyl sulfonate, cycloalkyl sulfonate, and aryl sulfonate may further have a substituent. In the case of a substituent, a halogen atom, a cyano group, a nitro group, a carboxyl group, a carboxylate group, and a sulfonate are preferred. Acid ester group.

於磺酸酯基與氮原子之間較佳為具有至少一個氧伸烷基。氧伸烷基之數係於分子內為一個以上,較佳為3至9個,進一步較佳為4至6個。在氧伸烷基之中以氧伸乙基(-CH2 CH2 O-)或是氧伸丙基(-CH(CH3 )CH2 O-或是-CH2 CH2 CH2 O-)為佳,進一步較佳為氧伸乙基。Preferably, the sulfonate group and the nitrogen atom have at least one oxygen alkyl group. The number of oxygen alkyl groups is more than one in the molecule, preferably from 3 to 9, more preferably from 4 to 6. Among the oxygen alkyl groups, an ethyl group (-CH 2 CH 2 O-) or an oxygen-extended propyl group (-CH(CH 3 )CH 2 O- or -CH 2 CH 2 CH 2 O-) More preferably, it is preferably an oxygen-extended ethyl group.

此等之鹼性化合物係單獨或是2種以上一起使用。These basic compounds are used alone or in combination of two or more.

鹼性化合物之使用量,以本發明之組成物之固體成分作為基準通常為0.001至10質量%,較佳為0.01至5質量%。The amount of the basic compound to be used is usually 0.001 to 10% by mass, preferably 0.01 to 5% by mass based on the solid content of the composition of the present invention.

酸產生劑與鹼性化合物之組成物中之使用比例係較佳為酸產生劑/鹼性化合物(莫耳比)=2.5至300。亦即,從感度、解像度的方面來說以莫耳比為2.5以上為佳,以曝光後到加熱處理為止的因歷時之由光阻圖案粗度而致解像度之降低抑制的方面來說,300以下較佳。酸產生劑/鹼性化合物(莫耳比)係,更佳為5.0至200,進一步較佳為7.0至150。The ratio of use of the acid generator to the composition of the basic compound is preferably an acid generator/basic compound (mole ratio) = 2.5 to 300. In other words, in terms of sensitivity and resolution, it is preferable that the molar ratio is 2.5 or more, and the reduction in resolution due to the thickness of the resist pattern from the time of exposure to the heat treatment is 300. The following is preferred. The acid generator/basic compound (mole ratio) is more preferably 5.0 to 200, still more preferably 7.0 to 150.

[界面活性劑][Surfactant]

本發明之組成物係較佳為進一步含有界面活性劑,更佳為含有氟系及/或矽系界面活性劑(氟系界面活性劑、矽系界面活性劑、具有氟原子與矽原子之兩者的界面活性劑)之任一,或是2種以上者。The composition of the present invention preferably further contains a surfactant, and more preferably contains a fluorine-based and/or a lanthanoid surfactant (a fluorine-based surfactant, a lanthanoid surfactant, and a fluorine atom and a ruthenium atom). Either of the surfactants) or two or more types.

本發明之組成物藉由含有上述界面活性劑,於250nm以下,尤其220nm以下之曝光光源之使用時,可賦予感度及解像度良好,且為密著性及顯影缺陷少的光阻圖案。When the composition of the present invention contains the above-mentioned surfactant, when it is used at an exposure light source of 250 nm or less, particularly 220 nm or less, it is possible to impart a resist pattern having excellent sensitivity and resolution and having less adhesion and development defects.

以氟系及/或矽系界面活性劑而言,可舉出例如特開昭62-36663號公報、特開昭61-226746號公報、特開昭61-226745號公報、特開昭62-170950號公報、特開昭63-34540號公報、特開平7-230165號公報、特開平8-62834號公報、特開平9-54432號公報、特開平9-5988號公報、特開2002-277862號公報、美國專利第5405720號說明書、同5360692號說明書、同5529881號說明書、同5296330號說明書、同5436098號說明書、同5576143號說明書、同5294511號說明書、同5824451號說明書記載之界面活性劑,亦可直接使用下述市售之界面活性劑。For the fluorine-based and/or lanthanum-based surfactants, for example, JP-A-62-36663, JP-A-61-226746, JP-A-61-226745, and JP-A-62- Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. 5,057, 520, the specification of 5, 560, 692, the same as 5, 527, 988, the same as 5, 296, 730, the same as 5, 546, 998, the same as 5, 576, 143, the same as 5,294,511, the same as the description of the 5,842,451, The following commercially available surfactants can also be used directly.

至於可使用的市售之界面活性劑,可舉出例如EFTOPEF301、EF303、(新秋田化成(股)製)、FRORAIDFC430、431、4430(住友3M(股)製)、MegafacF171、F173、F176、F189、F113、F110、F177、F120、R08(大日本油墨化學工業(股)製)、SurflonS-382、SC101、102、103、104、105、106(旭硝子(股)製)、TroysolS-366(Troychemical(股)製)、GF-300、GF-150(東亞合成化學(股)製)、SurflonS-393(SEIMICHEMICAL(股)製)、EFTOPEF121、EF122A、EF122B、RF122C、EF125M、EF135M、EF351、EF352、EF801、EF802、EF601((股)Jemco製)、PF636、PF656、PF6320、PF6520(OMNOVA公司製)、FTX-204G、208G、218G、230G、204D、208D、212D、218D、222D((股)eos製)等之氟系界面活性劑或矽系界面活性劑。又亦可使用矽烷聚合物KP-341(信越化學工業(股)製)作為矽系界面活性劑。As for the commercially available surfactants, for example, EFTOPEF301, EF303, (New Akita Chemicals Co., Ltd.), FRORAID FC430, 431, 4430 (Sumitomo 3M (share) system), Megafac F171, F173, F176, F189 , F113, F110, F177, F120, R08 (made by Dainippon Ink Chemical Industry Co., Ltd.), Surflon S-382, SC101, 102, 103, 104, 105, 106 (made by Asahi Glass Co., Ltd.), Troysol S-366 (Troychemical) (share) system, GF-300, GF-150 (manufactured by East Asia Synthetic Chemicals Co., Ltd.), Surflon S-393 (SEIMICHEMICAL), EFTOPEF121, EF122A, EF122B, RF122C, EF125M, EF135M, EF351, EF352, EF801, EF802, EF601 (made by Jemco), PF636, PF656, PF6320, PF6520 (made by OMNOVA), FTX-204G, 208G, 218G, 230G, 204D, 208D, 212D, 218D, 222D (() Eos A fluorine-based surfactant or a quinone-based surfactant. Further, a decane polymer KP-341 (manufactured by Shin-Etsu Chemical Co., Ltd.) can be used as the lanthanide surfactant.

又,以界面活性劑而言,於上述表示之類的習知者以外,可使用使用了下述化合物的界面活性劑,該化合物為從藉由短鏈聚合法(亦稱為短鏈聚合物法)或是低聚合法(亦稱為低聚物法)製造之氟脂肪族化合物衍生出之具有氟脂肪族基的聚合物。氟脂肪族化合物係可藉由記載於特開2002-90991號公報的方法合成。Further, as the surfactant, a surfactant using a compound which is a short-chain polymerization method (also referred to as a short-chain polymer) may be used in addition to the above-mentioned conventional ones. The method is a fluoroaliphatic group-derived polymer derived from a fluoroaliphatic compound produced by a low polymerization method (also referred to as an oligomer method). The fluoroaliphatic compound can be synthesized by the method described in JP-A-2002-90991.

以具有氟脂肪族基的聚合物而言,較佳為具有氟脂肪族基的單體與(聚(氧伸烷基))丙烯酸及/或(聚(氧伸烷基))甲基丙烯酸之共聚合物,即使為不規則分布者,亦可嵌段共聚合。又,以聚(氧伸烷)基而言,可舉出聚(氧伸乙)基、聚(氧伸丙)基、聚(氧伸丁)基等,又,亦可為聚(氧伸乙基與氧伸丙基與氧伸乙基之嵌段連結體)或聚(氧伸乙基與氧伸丙基之嵌段連結體)等相同鏈長內具有不同鏈長之伸烷基之類的單元。進一步具有氟脂肪族基之單體與(聚(氧伸烷))丙烯酸(或甲基丙烯酸)之共聚合物係不全為二價共聚合物,亦可為不同之2種以上之具有氟脂肪族基之單體,或不同之2種以上之(聚(氧伸烷))丙烯酸(或甲基丙烯酸)等同時共聚合之3元系以上之共聚合物。In the case of a polymer having a fluoroaliphatic group, a monomer having a fluoroaliphatic group and (poly(oxyalkylene))acrylic acid and/or (poly(oxyalkylene))methacrylic acid are preferred. The copolymer, even if it is an irregular distribution, can also be block copolymerized. Further, examples of the poly(oxyalkylene) group include a poly(oxyethylene) group, a poly(oxypropylene) group, a poly(oxygen) group, and the like, and may also be a poly(oxygen extension). a chain linker of an ethyl group with an oxygen-extended propyl group and an oxygen-extended ethyl group) or a poly(alkyl-and-oxygen-extended propyl block link) having the same chain length and the like. The unit of the class. Further, the copolymer having a fluoroaliphatic group and a copolymer of (poly(oxyalkylene))acrylic acid (or methacrylic acid) are not all divalent copolymers, and two or more different types of fluorocarbons may be used. A group-based monomer or a copolymer of a ternary system or more of two or more kinds of (poly(oxyalkylene))acrylic acid (or methacrylic acid) or the like.

例如,作為市售之界面活性劑,可舉出megafac F178、F-470、F-473、F-475、F-476、F-472(大日本油墨化學工業(股)製)。進一步可舉出具有C6 F13 基之丙烯酸(或甲基丙烯酸)與(聚(氧伸烷))丙烯酸(或甲基丙烯酸)之共聚合物、具有C3 F7 基之丙烯酸(或甲基丙烯酸)與(聚(氧伸乙基))丙烯酸(或甲基丙烯酸)與(聚(氧伸丙基))丙烯酸(或甲基丙烯酸)之共聚合物等。For example, megafac F178, F-470, F-473, F-475, F-476, and F-472 (made by Dainippon Ink Chemicals Co., Ltd.) are mentioned as a commercially available surfactant. Further, a copolymer of acrylic acid (or methacrylic acid) having a C 6 F 13 group and (poly(oxyalkylene))acrylic acid (or methacrylic acid), acrylic acid having a C 3 F 7 group (or a a copolymer of (acrylic acid) and (poly(oxyethylidene))acrylic acid (or methacrylic acid) and (poly(oxypropyl))acrylic acid (or methacrylic acid).

又,在本發明係亦可使用氟系及/或矽系界面活性劑以外之其他的界面活性劑。具體而言,可舉出聚氧基伸乙基月桂基醚、聚氧基伸乙基硬脂基醚、聚氧基伸乙基鯨蠟基醚、聚氧基伸乙基油基醚等之聚氧基伸乙基烷基醚類、聚氧基伸乙基辛基苯酚醚、聚氧基伸乙基壬基苯酚醚等之聚氧基伸乙基烷基芳基醚類、聚氧基伸乙基‧聚氧基伸丙基嵌段共聚物類、脫水山梨醇單月桂酸酯、脫水山梨醇單棕櫚酸酯、脫水山梨醇單硬脂酸酯、脫水山梨醇單油酸酯、脫水山梨醇三油酸酯、脫水山梨醇三硬脂酸酯等之脫水山梨醇脂肪酸酯類、聚氧基伸乙基脫水山梨醇單月桂酸酯、聚氧基伸乙基脫水山梨醇單棕櫚酸酯、聚氧基伸乙基脫水山梨醇單硬脂酸酯、聚氧基伸乙基脫水山梨醇三油酸酯、聚氧基伸乙基脫水山梨醇三硬脂酸酯等之聚氧基伸乙基脫水山梨醇脂肪酸酯類等之非離子系界面活性劑等。Further, in the present invention, a surfactant other than a fluorine-based and/or an anthraquinone-based surfactant may be used. Specific examples thereof include polyoxyalkylene lauryl ether, polyoxyethylidene stearyl ether, polyoxyethylidene cetyl ether, polyoxyethylene oleyl ether, and the like. Polyoxyalkylene aryl ethers, polyoxyethylene ethoxylates, propyl ethers, polyoxyethyl octyl phenol ethers, polyoxyethylidene phenol ethers, etc. Block copolymers, sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, sorbitan monooleate, sorbitan trioleate, sorbitan A sorbitan fatty acid ester such as tristearate, polyoxyethyl sorbitan monolaurate, polyoxyethyl sorbitan monopalmitate, polyoxyethyl sorbitan monohard Nonionic interfacial activity of polyoxyalkylene sorbitan fatty acid esters such as fatty acid esters, polyoxyethyl sorbitan trioleate, polyoxyethyl sorbitan tristearate Agents, etc.

此等之界面活性劑係亦可單獨使用,又,亦可以幾個之組合來使用。These surfactants may also be used singly or in combination of several.

界面活性劑之使用量係相對於感光化射線性或感放射線性樹脂組成物總量(溶劑除外)較佳為0至2質量%,進一步較佳為0.0001至2質量%,特佳為0.0005至1質量%。The amount of the surfactant to be used is preferably from 0 to 2% by mass, more preferably from 0.0001 to 2% by mass, particularly preferably from 0.0005 to the total amount of the photosensitive ray-sensitive or radiation-sensitive resin composition (excluding the solvent). 1% by mass.

[羧酸鎓鹽][carboxylic acid sulfonium salt]

本發明之組成物係亦可含有羧酸鎓鹽。以羧酸鎓鹽而言,可舉出羧酸鋶鹽、羧酸錪鹽、羧酸銨鹽等。尤其,以羧酸鎓鹽而言,較佳為錪鹽、鋶鹽。再者,本發明之羧酸鎓鹽之羧酸酯殘基較佳為不含芳香族基、碳-碳雙鍵。以特佳之陰離子部而言,較佳為碳數1至30之直鏈、分枝、單環或多環狀烷基羧酸陰離子。進一步較佳為此等之烷基之一部分或全部為經氟取代之羧酸之陰離子較佳。於烷基鏈中亦可含有氧原子。藉此確保對於220nm以下之光的透明性,提升感度、解像力,改良疏密依存性、曝光寬容度。The composition of the present invention may also contain a cerium carboxylate salt. The carboxylic acid cerium salt may, for example, be a cerium carboxylate salt, a carboxylic acid cerium salt or a carboxylic acid ammonium salt. In particular, in the case of a cerium carboxylate salt, a phosphonium salt or a phosphonium salt is preferred. Further, the carboxylate residue of the cerium carboxylate salt of the present invention preferably contains no aromatic group or carbon-carbon double bond. The particularly preferred anion moiety is preferably a linear, branched, monocyclic or polycyclic alkyl carboxylic acid anion having from 1 to 30 carbon atoms. It is further preferred that one or all of the alkyl groups such as those which are fluorine-substituted carboxylic acids are preferred. An oxygen atom may also be contained in the alkyl chain. This ensures transparency to light below 220 nm, enhances sensitivity and resolution, and improves density and exposure latitude.

以經氟取代之羧酸之陰離子而言,可舉出氟乙酸、二氟乙酸、三氟乙酸、五氟丙酸、七氟丁酸、九氟戊酸、全氟十二烷酸、全氟十三烷酸、全氟環己烷羧酸、2,2-雙三氟甲基丙酸之陰離子等。Examples of the anion of the fluorine-substituted carboxylic acid include fluoroacetic acid, difluoroacetic acid, trifluoroacetic acid, pentafluoropropionic acid, heptafluorobutyric acid, nonafluoropentanoic acid, perfluorododecanoic acid, and perfluorocarbon. An alkanoic acid, perfluorocyclohexanecarboxylic acid, an anion of 2,2-bistrifluoromethylpropionic acid, and the like.

此等之羧酸鎓鹽係可藉由將氫氧化鋶、氫氧化錪、氫氧化銨與羧酸在適當的溶劑中與氧化銀反應而合成。These carboxylic acid sulfonium salts can be synthesized by reacting cesium hydroxide, cesium hydroxide, ammonium hydroxide and a carboxylic acid with silver oxide in a suitable solvent.

羧酸鎓鹽之組成物中之含量係相對於組成物之總固體成分,一般為0.1至20質量%,較佳為0.5至10質量%,再更佳為1至7質量%。The content in the composition of the cerium carboxylate salt is usually from 0.1 to 20% by mass, preferably from 0.5 to 10% by mass, still more preferably from 1 to 7% by mass, based on the total solid content of the composition.

[溶解阻止化合物][dissolution blocking compound]

本發明之組成物係亦可含有藉由酸之作用分解並增大在鹼顯影液中之溶解度、分子量3000以下之溶解阻止化合物(以下亦稱為「溶解阻止化合物」)。以溶解阻止化合物而言,為了不使220nm以下之透過性降低,較佳為記載於ProceedingofSPIE,2724,355(1996)的含酸分解性基的膽酸衍生物之各種含酸分解性基的脂環族或脂肪族化合物較佳。以酸分解性基、脂環式構造而言,可舉出與在(B)成分之樹脂之處已說明者同樣之者。The composition of the present invention may further contain a dissolution preventing compound (hereinafter also referred to as "dissolution preventing compound") which is decomposed by an action of an acid and which increases the solubility in an alkali developing solution and has a molecular weight of 3,000 or less. In order to prevent the permeability of the compound from being dissolved, the acid-decomposable group-containing fat of the acid-decomposable group-containing cholic acid derivative of Proceeding of SPIE, 2724, 355 (1996) is preferably used. A cyclosteroid or an aliphatic compound is preferred. The acid-decomposable group or the alicyclic structure may be the same as those described for the resin of the component (B).

於將本發明之組成物以KrF準分子雷射曝光,或以電子束照射的情況,較佳為含有將苯酚化合物之苯酚性羥基以酸分解基取代的構造者。以苯酚化合物而言含有1至9個苯酚骨架者為佳,進一步較佳為含有2至6個者。In the case where the composition of the present invention is exposed to a KrF excimer laser or irradiated with an electron beam, it is preferred to contain a structure in which a phenolic hydroxyl group of a phenol compound is substituted with an acid-decomposing group. The phenol compound preferably contains from 1 to 9 phenol skeletons, and more preferably from 2 to 6 members.

本發明中之溶解阻止化合物之分子量係3000以下,較佳為300至3000,再更佳為500至2500。The molecular weight of the dissolution preventing compound in the present invention is 3,000 or less, preferably 300 to 3,000, and more preferably 500 to 2,500.

溶解阻止化合物之添加量係相對於本發明之組成物之固體成分,較佳為3至50質量%,更佳為5至40質量%。The amount of the dissolution preventing compound added is preferably from 3 to 50% by mass, more preferably from 5 to 40% by mass, based on the solid content of the composition of the present invention.

於以下表示溶解阻止化合物之具體例,但本發明係不被限定於此等。Specific examples of the dissolution preventing compound are shown below, but the present invention is not limited thereto.

[其他之添加劑][Other additives]

於本發明之組成物,亦可根據需要進一步含有染料、塑化劑、光增感劑、光吸收劑、及促進對於顯影液之溶解性的化合物(例如分子量1000以下之苯酚化合物、具有羧基之脂環族、或脂肪族化合物)等。Further, if necessary, the composition of the present invention may further contain a dye, a plasticizer, a photosensitizer, a light absorbing agent, and a compound which promotes solubility in a developing solution (for example, a phenol compound having a molecular weight of 1,000 or less, having a carboxyl group) An alicyclic group, or an aliphatic compound).

如此之分子量1000以下之苯酚化合物係,參考記載於例如特開平4-122938號公報、特開平2-28531號公報、美國專利第4,916,210號說明書、歐洲專利第219294號說明書等之方法而行,該技術領域中具有通常知識者可容易地合成。Such a phenolic compound having a molecular weight of 1,000 or less is described in, for example, JP-A-4-122938, JP-A-2-28531, US Pat. No. 4,916,210, and European Patent No. 219294. Those of ordinary skill in the art can easily synthesize.

以具有羧基之脂環族、或脂肪族化合物之具體例而言舉出具有膽酸、去氧膽酸、三膽酸等之甾類構造羧酸衍生物,金剛烷羧酸衍生物、金剛烷二羧酸、環己烷羧酸、環己烷二羧酸等,但不為限定於此者。Specific examples of the alicyclic group having a carboxyl group or an aliphatic compound include a quinone structure carboxylic acid derivative having an acid such as cholic acid, deoxycholic acid or tricholic acid, an adamantanecarboxylic acid derivative, and adamantane. Dicarboxylic acid, cyclohexanecarboxylic acid, cyclohexanedicarboxylic acid, etc., but not limited thereto.

圖案形成方法Pattern forming method

從解像力向上之觀點來看,本發明之組成物較佳為以膜厚30至250nm而使用,更佳為以膜厚30至200nm而使用較佳。藉由將感光化射線性或感放射線性樹脂組成物中之固體成分濃度設定於適當的範圍而有適度的黏度、提升塗布性、製膜性,可作成如此之膜厚。From the viewpoint of the resolution of the above, the composition of the present invention is preferably used in a film thickness of 30 to 250 nm, more preferably in a film thickness of 30 to 200 nm. The film thickness can be set by setting the solid content concentration in the sensitized ray-sensitive or radiation-sensitive resin composition to an appropriate range to have an appropriate viscosity, improved coatability, and film formability.

感光化射線性或感放射線性樹脂組成物中之總固體成分濃度係一般為1至10質量%,更佳為1至8.0質量%,進一步較佳為1.0至6.0質量%。The total solid content concentration in the photosensitive ray-sensitive or radiation-sensitive resin composition is usually from 1 to 10% by mass, more preferably from 1 to 8.0% by mass, still more preferably from 1.0 to 6.0% by mass.

本發明之組成物係將上述之成分溶解於指定之有機溶劑,以溶解於於前述混合溶劑較佳,並以過濾器過濾後,以如下的方式塗布於指定之支撐體上而使用。用於過濾器過濾的過濾器之孔徑係0.1μm以下,更佳為0.05μm以下,再更佳為0.03μm以下之聚四氟乙烯製、聚乙烯製、尼龍製之者較佳。The composition of the present invention is prepared by dissolving the above-mentioned components in a predetermined organic solvent, dissolving in the above-mentioned mixed solvent, filtering them with a filter, and applying them to a predetermined support as follows. The filter for filter filtration has a pore size of 0.1 μm or less, more preferably 0.05 μm or less, still more preferably 0.03 μm or less, and is preferably made of polytetrafluoroethylene, polyethylene or nylon.

例如,將感光化射線性或感放射線性樹脂組成物使用於精密積體電路元件之製造之類的基板(例:矽/二氧化矽被覆),於其上藉由旋塗、塗布等之適當的塗布方法來塗布、並乾燥、形成光阻膜。For example, a sensitizing ray-sensitive or radiation-sensitive resin composition is used for a substrate (for example, ruthenium/ruthenium dioxide coating) for manufacturing a precision integrated circuit element, and is suitably coated by spin coating, coating, or the like. The coating method is applied, dried, and formed into a photoresist film.

於該光阻膜,通過指定之光罩照射光化射線或放射線,較佳為進行烘烤(加熱)、顯影、沖洗。藉此可得良好的圖案。Preferably, the photoresist film is irradiated (heated), developed, and rinsed by irradiating actinic rays or radiation through a predetermined mask. A good pattern can be obtained by this.

以光化射線或放射線而言,可舉出紅外線、可見光、紫外線、遠紫外線、極紫外線、X射線、電子束等,但較佳為250nm以下,更佳為220nm以下,特佳為1至200nm之波長之遠紫外光,具體而言,為KrF準分子雷射(248nm)、ArF準分子雷射(193nm)、F2 準分子雷射(157nm)、X射線、電子束等,較佳為ArF準分子雷射、F2 準分子雷射、EUV(13nm)、電子束。Examples of actinic rays or radiation include infrared rays, visible light, ultraviolet rays, far ultraviolet rays, extreme ultraviolet rays, X rays, electron beams, and the like, but are preferably 250 nm or less, more preferably 220 nm or less, and particularly preferably 1 to 200 nm. The far-ultraviolet light of the wavelength is specifically KrF excimer laser (248 nm), ArF excimer laser (193 nm), F 2 excimer laser (157 nm), X-ray, electron beam, etc., preferably ArF excimer laser, F 2 excimer laser, EUV (13 nm), electron beam.

於形成膜之前,亦可於基板上預先塗設反射防止膜。An anti-reflection film may be preliminarily coated on the substrate before the film is formed.

以反射防止膜而言,可使用鈦、二氧化鈦、氮化鈦、氧化鉻、碳、非晶質矽等之無機膜型、吸光劑與聚合物材料所構成之有機膜型之任一者。又,有機反射防止膜係亦可使用Brewerscience公司製之DUV30系列或、DUV-40系列、Shipley公司製之AR-2、AR-3、AR-5等之市售之有機反射防止膜。As the antireflection film, any of an inorganic film type such as titanium, titanium oxide, titanium nitride, chromium oxide, carbon, or amorphous germanium, or an organic film type composed of a light absorbing agent and a polymer material can be used. Further, as the organic anti-reflection film, a commercially available organic anti-reflection film such as DUV30 series manufactured by Brewerscience Co., Ltd., DUV-40 series, AR-2, AR-3, AR-5 manufactured by Shipley Co., Ltd., or the like can be used.

在顯影步驟係如下使用鹼顯影液。以感光化射線性或感放射線性樹脂組成物之鹼顯影液而言,可使用氫氧化鈉、氫氧化鉀、碳酸鈉、矽酸鈉、甲基矽酸鈉、氨水等之無機鹼類、乙胺、正丙胺等之第一胺類、二乙胺、二-正丁胺等之第二胺類、三乙胺、甲基二乙胺等之第三胺類、二甲基乙醇胺、三乙醇胺等之醇胺類、氫氧化四甲基銨、氫氧化四乙基銨等之第四級銨鹽、吡咯、哌啶等之環狀胺類等之鹼性水溶液。In the developing step, an alkali developing solution was used as follows. For the alkali developer of the sensitizing ray-sensitive or radiation-sensitive resin composition, an inorganic base such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium citrate, sodium methyl citrate or ammonia can be used. a first amine such as an amine or n-propylamine; a second amine such as diethylamine or di-n-butylamine; a third amine such as triethylamine or methyldiethylamine; dimethylethanolamine or triethanolamine. An alkaline aqueous solution such as a fourth-order ammonium salt such as an alcoholamine, tetramethylammonium hydroxide or tetraethylammonium hydroxide, or a cyclic amine such as pyrrole or piperidine.

再者,可於上述鹼顯影液適量添加醇類、界面活性劑而使用。Further, an alcohol or a surfactant may be added to the alkali developer in an appropriate amount to be used.

鹼顯影液之鹼濃度係通常為0.1至20質量%。The alkali concentration of the alkali developer is usually from 0.1 to 20% by mass.

鹼顯影液之pH係通常為10.0至15.0。The pH of the alkali developer is usually from 10.0 to 15.0.

再者,亦可於上述鹼性水溶液適量添加醇類、界面活性劑而使用。Further, an alcohol or a surfactant may be added to the alkaline aqueous solution in an appropriate amount to be used.

以沖洗液而言,使用純水並適量添加界面活性劑而使用。In the case of the rinsing liquid, pure water is used and an appropriate amount of a surfactant is added for use.

又,於顯影處理或沖洗處理之後,可進行將圖案上附著的顯影液或沖洗液以超臨界流體除去的處理。Further, after the development treatment or the rinsing treatment, a treatment for removing the developer or the rinsing liquid adhering to the pattern by the supercritical fluid may be performed.

[實施例][Examples]

以下藉由實施例說明本發明,但本發明係不為限定於此者。The present invention is described below by way of examples, but the invention is not limited thereto.

<光酸產生劑之合成><Synthesis of photoacid generator>

將下述光酸產生劑PAG15按照以下之合成路線合成。The photoacid generator PAG15 described below was synthesized in accordance with the following synthetic route.

[化合物1之合成][Synthesis of Compound 1]

將20g溴甲基環己烷、12.5g 1-萘酚在三口燒瓶中溶解於300g NMP後,加入12g碳酸鉀、14g碘化鉀在120℃加熱8小時。於反應液加入300g水,以100g己烷進行3次萃取,將所得有機層合倂,以100g 1N氫氧化鈉水溶液洗淨一次、水100g洗淨一次、Brine 100g洗淨一次後,濃縮得到13g化合物1。20 g of bromomethylcyclohexane and 12.5 g of 1-naphthol were dissolved in 300 g of NMP in a three-necked flask, and then heated at 120 ° C for 8 hours by adding 12 g of potassium carbonate and 14 g of potassium iodide. 300 g of water was added to the reaction solution, and extraction was carried out three times with 100 g of hexane. The obtained organic layer was combined, washed once with 100 g of 1N aqueous sodium hydroxide solution, once with water (100 g), and once with Brine 100 g, and concentrated to give 13 g. Compound 1.

[化合物2之合成][Synthesis of Compound 2]

化合物2係參考記載於特開2005-266799號公報之方法而合成。Compound 2 was synthesized by the method described in JP-A-2005-266799.

[PAG15之合成][Synthesis of PAG15]

將13.1g化合物1在三口燒瓶中溶解於65g Eaton試劑後,一邊攪拌一邊滴入5.7g四亞甲基亞碸,並進一步進行3小時攪拌。反應液予以240g水之後,添加25g化合物2、50g氯仿。分離有機層後,從水層使用50g氯仿進一步進行2次萃取。將所得有機層合倂,進行2次水洗並濃縮。將所得組成物用20g乙酸乙酯進行再結晶,得到22g PAG15。After dissolving 13.1 g of the compound 1 in 65 g of Eaton's reagent in a three-necked flask, 5.7 g of tetramethylenefluorene was added dropwise while stirring, and the mixture was further stirred for 3 hours. After 240 g of water was added to the reaction mixture, 25 g of a compound 2 and 50 g of chloroform were added. After separating the organic layer, the extraction was further carried out twice from the aqueous layer using 50 g of chloroform. The obtained organic layer was combined, washed twice with water and concentrated. The obtained composition was recrystallized from 20 g of ethyl acetate to obtain 22 g of PAG15.

對於PAG1至PAG14、PAG16至PAG21,亦以與PAG15同樣之方法調製。For PAG1 to PAG14, PAG16 to PAG21, it was also prepared in the same manner as PAG15.

<樹脂(A)之合成><Synthesis of Resin (A)>

合成例1樹脂(1)之合成Synthesis Example 1 Synthesis of Resin (1)

在氮氣流下將8.6g環己酮放入三口燒瓶,將此加熱至80℃。將8.0g降莰烷內酯甲基丙烯酸、4.0g二羥基金剛烷基甲基丙烯酸、9.0g 2-金剛烷基異丙甲基丙烯酸、聚合起始劑V-601(和光純藥製)以相對於單體8mol%溶解於70g環己酮的溶液以6小時滴入於此。滴入結束後,進一步在80℃反應2小時。將反應液放冷後以20分鐘滴入於800ml己烷/200ml乙酸乙酯之混合液,濾取所析出之粉體、乾燥則得到17g樹脂(1)。所得樹脂之重量平均分子量係以標準聚苯乙烯換算為8500、分散度(Mw/Mn)為1.8。8.6 g of cyclohexanone was placed in a three-necked flask under a nitrogen stream, and this was heated to 80 °C. 8.0 g of norbornactone methacrylic acid, 4.0 g of dihydroxyadamantyl methacrylic acid, 9.0 g of 2-adamantyl isopropyl methacrylic acid, and a polymerization initiator V-601 (manufactured by Wako Pure Chemical Industries, Ltd.) A solution dissolved in 70 g of cyclohexanone with respect to 8 mol% of the monomer was dropped thereon for 6 hours. After the completion of the dropwise addition, the mixture was further reacted at 80 ° C for 2 hours. The reaction solution was allowed to stand for cooling, and then a mixture of 800 ml of hexane / 200 ml of ethyl acetate was added dropwise thereto over 20 minutes, and the precipitated powder was collected by filtration and dried to obtain 17 g of a resin (1). The weight average molecular weight of the obtained resin was 8,500 in terms of standard polystyrene, and the degree of dispersion (Mw/Mn) was 1.8.

與上述合成例1中之方法同樣地進行,使用表示於後示之表3的單體,合成具有表示於同表的組成比、重量平均分子量、分散度(Mw/Mn)的酸分解性樹脂(2)至(12)。In the same manner as in the above-mentioned Synthesis Example 1, an acid-decomposable resin having a composition ratio, a weight average molecular weight, and a degree of dispersion (Mw/Mn) shown in the same table was synthesized using the monomers shown in Table 3 shown below. (2) to (12).

<樹脂(C)之合成><Synthesis of Resin (C)>

合成例2添加聚合物C-7之合成Synthesis Example 2 Addition of Polymer C-7

將對應於下述重複單元的單體以各自90/10之比例(莫耳比)裝入,溶解於PGMEA,並調製成固體成分濃度15質量%之溶液450g。於此溶液加入1mol%和光純藥製聚合起始劑V-60,將此在氮氣體環境下以6小時加熱至100℃滴入50g PGMEA。滴入結束後,將反應液攪拌2小時。反應結束後將反應液冷卻直到室溫,於5L甲醇晶析,濾取所析出的白色粉體,回收目標物的樹脂C-7。The monomers corresponding to the following repeating units were charged at a ratio of 90/10 (mole ratio), dissolved in PGMEA, and prepared into a solution of 450 g of a solid content concentration of 15% by mass. To the solution was added 1 mol% of a polymerization initiator V-60 manufactured by Wako Pure Chemical Industries Co., Ltd., and 50 g of PGMEA was added dropwise thereto by heating to 100 ° C for 6 hours under a nitrogen atmosphere. After the completion of the dropwise addition, the reaction solution was stirred for 2 hours. After completion of the reaction, the reaction liquid was cooled to room temperature, and crystallized in 5 L of methanol, and the precipitated white powder was collected by filtration to recover the target compound C-7.

從NMR求得之聚合物組成比係為90/10。又,藉由GPC測定求得之標準聚苯乙烯換算之重量平均分子量係為8000、分散度為1.40。The polymer composition ratio determined from NMR was 90/10. Further, the weight average molecular weight in terms of standard polystyrene determined by GPC measurement was 8,000, and the degree of dispersion was 1.40.

與上述合成例2中之方法同樣地進行,前示之樹脂C-3、C-26、C-49、C-63、C-69、C-76、C-88、C-132、C-146、C-165、C-193、C-211每個各合成具有表示於前示之表1的組成比、重量平均分子量、分散度(Mw/Mn)之各樹脂。The resin C-3, C-26, C-49, C-63, C-69, C-76, C-88, C-132, C- shown above was carried out in the same manner as in the above Synthesis Example 2. 146, C-165, C-193, and C-211 each had a respective resin having a composition ratio, a weight average molecular weight, and a degree of dispersion (Mw/Mn) shown in Table 1 shown above.

<光阻調製><Photoresist modulation>

將於下表表示之成分溶解於溶劑,對各自調製成總固體成分濃度4質量%之溶液,將此以具有0.05μm之孔徑之聚乙烯過濾器過濾並調製成液浸曝光用正型光阻溶液。將所調製成之光阻組成物以下述之方法評估,並將結果表示於同表。另外,關於同表中之各成分、使用多種之情況之比係質量比。The components shown in the following table were dissolved in a solvent, and each of them was prepared into a solution having a total solid content concentration of 4% by mass, and this was filtered with a polyethylene filter having a pore diameter of 0.05 μm to prepare a positive resist for liquid immersion exposure. Solution. The prepared photoresist composition was evaluated in the following manner, and the results were shown in the same table. In addition, the ratio of the ratio of each component in the same table and the use of various components is a mass ratio.

樹脂(C)之添加量係相對於光阻組成物之總固體成分為質量%。The amount of the resin (C) added is % by mass based on the total solid content of the photoresist composition.

表4Table 4

上述表4中之代號係如以下。The symbols in Table 4 above are as follows.

[酸產生劑及樹脂(C)][Acid generator and resin (C)]

酸產生劑及樹脂(C)係對應先前例示者。The acid generator and the resin (C) correspond to the previous examples.

[鹼性化合物][alkaline compound]

N-1:N,N-二丁基苯胺N-1: N,N-dibutylaniline

N-2:2,6-二異丙基苯胺N-2: 2,6-diisopropylaniline

N-3:2-苯基苯并咪唑N-3: 2-phenylbenzimidazole

N-6:2,4,5-三苯基咪唑N-6: 2,4,5-triphenylimidazole

[界面活性劑][Surfactant]

W-1:megafac F176(大日本油墨化學工業(股)製、氟系)W-1: megafac F176 (Daily Ink Chemical Industry Co., Ltd., fluorine system)

W-2:Troysol S-366(TroyChemical(股)製)W-2: Troysol S-366 (made by Troy Chemical)

W-3:PF6320(OMNOVA公司製、氟系)W-3: PF6320 (made by OMNOVA, fluorine)

[溶劑][solvent]

SL-1:丙二醇單甲基醚乙酸酯(PGMEA)SL-1: Propylene glycol monomethyl ether acetate (PGMEA)

SL-2:丙二醇單甲基醚(PGME)SL-2: Propylene glycol monomethyl ether (PGME)

SL-3:乳酸乙酯SL-3: ethyl lactate

SL-4:環己酮SL-4: cyclohexanone

SL-5:2-庚酮SL-5: 2-heptanone

SL-6:碳酸丙二酯SL-6: propylene carbonate

SL-7:正甲基吡咯啶酮SL-7: n-methylpyrrolidone

SL-8:γ-丁內酯SL-8: γ-butyrolactone

<光阻評估><Photoresist evaluation> [曝光條件:ArF液浸曝光][Exposure conditions: ArF immersion exposure]

於矽晶圓上塗布有機反射防止膜ARC29A(日產化學公司製),在205℃進行60秒之烘烤,形成膜厚98nm之反射防止膜。於其上塗布經調製之正型光阻組成物,在130℃進行60秒之烘烤,形成膜厚120nm之光阻膜。將所得之晶圓使用ArF準分子雷射液浸掃描機(ASML公司製XT1700i、NA1.20、C-Quad、外標準差0.981、內標準差0.895、XY偏向),通過65nm1:1線隔圖案之6%半色調光罩曝光。以液浸液而言使用超純水。其後在130℃加熱60秒後,以氫氧化四甲基銨水溶液(2.38質量%)顯影30秒,並以純水沖洗後旋轉乾燥得到光阻圖案。An organic anti-reflection film ARC29A (manufactured by Nissan Chemical Co., Ltd.) was applied onto the wafer, and baked at 205 ° C for 60 seconds to form an anti-reflection film having a film thickness of 98 nm. The prepared positive-type photoresist composition was coated thereon, and baked at 130 ° C for 60 seconds to form a photoresist film having a film thickness of 120 nm. The obtained wafer was subjected to an ArF excimer laser immersion scanner (XT1700i, NA1.20, C-Quad, external standard deviation 0.981, internal standard deviation 0.895, XY deflection) manufactured by ASML, and passed through a 65 nm 1:1 line pattern. The 6% halftone mask is exposed. Ultrapure water is used in the case of liquid immersion liquid. Thereafter, the film was heated at 130 ° C for 60 seconds, developed with an aqueous solution of tetramethylammonium hydroxide (2.38 mass%) for 30 seconds, rinsed with pure water, and then rotary dried to obtain a photoresist pattern.

[塗布缺陷][coating defect]

於12inch矽晶圓將5cc光阻以3000rpm旋轉塗布後,以加熱板進行烘烤,測定從塗布後之晶圓外周部10mm以內之膜厚。膜厚變動為4nm以內之者給A,大於4nm、20nm以下之者給B,大於20nm、50nm以下之者給C,大於50nm、或產生條紋、溶質之析出、膜污濁或光阻未被覆至晶圓之外周部者給D。A 5 cc photoresist was spin-coated at 3000 rpm on a 12-inch wafer, and then baked with a hot plate, and the film thickness within 10 mm from the outer peripheral portion of the coated wafer was measured. When the film thickness variation is within 4 nm, A is given to B, and when it is larger than 4 nm and 20 nm or less, B is given, and when it is larger than 20 nm and 50 nm or less, C is applied, C is larger than 50 nm, streaks are generated, precipitation of solute, film contamination, or photoresist is not covered. The outside of the wafer is given to D.

[LWR][LWR]

LWR之測定係使用臨界尺寸掃描電子顯微鏡(CD-SEM)((股)日立製作所S-9260),觀察最佳曝光量中65nm之孤立圖案,對於從線圖案之較長方向之緣5μm之範圍,測定從緣之應有基準線之距離50點,求得標準差,算出3σ。值越小表示為性能良好。The measurement of LWR was carried out using a critical dimension scanning electron microscope (CD-SEM) ((H) Hitachi, Ltd. S-9260), and an isolated pattern of 65 nm in the optimum exposure amount was observed for a range of 5 μm from the edge of the longer direction of the line pattern. The distance from the reference line of the edge is measured at 50 points, and the standard deviation is obtained to calculate 3σ. A smaller value indicates good performance.

從表4,瞭解使用本發明之感光化射線性或感放射線性樹脂組成物形成之圖案係抑制了塗布缺陷,且LWR性能優越。From Table 4, it is understood that the pattern formed by using the sensitized ray-sensitive or radiation-sensitive resin composition of the present invention suppresses coating defects and has excellent LWR performance.

Claims (13)

一種感光化射線性或感放射線性樹脂組成物,其特徵為含有下述(A)至(D):(A)藉由酸之作用增大對鹼顯影液之溶解度之樹脂、(B)以下述通式(1-1)或(1-2)表示之化合物、(C)包含於一個側鏈上具有氟原子及矽原子之至少之一者與藉由鹼顯影液之作用分解並增大對鹼顯影液之溶解性的極性變換基之重複單元之樹脂、且為包含至少具有羧酸酯基(-COO-)作為該極性變換基之重複單元之樹脂(惟該羧酸酯基不包含內酯基中的-COO-)、及(D)2種以上之溶劑所構成之混合溶劑,即含有由以下述通式(S1)至(S4)表示之群組中選出之至少1種溶劑,並該溶劑之合計含有率為全部溶劑中之1至20質量%之混合溶劑; 通式(1-1)中,R13 係表示氫原子、氟原子、羥基、烷基、環烷基、烷氧基、烷氧基羰基、或具有單環或是多環的環烷骨架之基;存在多個R14 的情況,其係各自獨立表示烷基、環烷基、烷氧基、烷氧基羰基、烷基羰基、烷基磺醯基、環烷基磺醯基、或具有單環或是多環的環烷骨架之基; R15 係各自獨立表示烷基、環烷基或萘基;2個R15 亦可互相結合形成環;l係表示0至2之整數;r係表示0至8之整數;X- 係表示非親核性陰離子;通式(1-2)中,M係表示烷基、環烷基、芳基或苄基,具有環構造時,環構造係亦可含有氧原子、硫原子、酯鍵、醯胺鍵、或碳-碳雙鍵;R1c 及R2c 係各自獨立地表示氫原子、烷基、環烷基、鹵素原子、氰基或芳基;Rx 及Ry 係各自獨立地表示烷基、環烷基、2-側氧烷基、烷氧基羰基烷基、烯丙基、或乙烯基;Rx 及Ry 亦可結合形成環;M、R1c 及R2c 之至少二個亦可結合形成環,於該環構造亦可含碳-碳雙鍵;X- 係表示非親核性陰離子; 通式(S1)至(S3)中,R1 至R7 係各自獨立地表示亦可具有取代基之烷基、亦可具有取代基之環烷基,或亦可具有取代基之芳基;R1 與R2 、R3 與R4 、或R6 與R7 係亦可互相連結形成環; 通式(S4)中,R8 及R9 係各自獨立地表示亦可具有取代基之烷基,兩個基亦可互相結合形成環。A photosensitive ray-sensitive or radiation-sensitive resin composition characterized by containing the following (A) to (D): (A) a resin which increases the solubility to an alkali developer by an action of an acid, and (B) a compound represented by the formula (1-1) or (1-2), (C) comprising at least one of a fluorine atom and a ruthenium atom in one side chain and decomposed and enlarged by the action of an alkali developer a resin of a repeating unit of a polar conversion group which is soluble in an alkali developing solution, and a resin containing a repeating unit having at least a carboxylate group (-COO-) as the polar converting group (except that the carboxylate group does not contain a mixed solvent of -COO-) in the lactone group and (D) two or more solvents, that is, at least one solvent selected from the group consisting of the following general formulae (S1) to (S4) And the total content of the solvent is a mixed solvent of 1 to 20% by mass of the total solvent; In the formula (1-1), R 13 represents a hydrogen atom, a fluorine atom, a hydroxyl group, an alkyl group, a cycloalkyl group, an alkoxy group, an alkoxycarbonyl group, or a cycloalkane skeleton having a monocyclic or polycyclic ring. a group; the case where a plurality of R 14 are present, each independently representing an alkyl group, a cycloalkyl group, an alkoxy group, an alkoxycarbonyl group, an alkylcarbonyl group, an alkylsulfonyl group, a cycloalkylsulfonyl group, or a a monocyclic or polycyclic cycloalkane skeleton; R 15 each independently represents an alkyl group, a cycloalkyl group or a naphthyl group; 2 R 15 may be bonded to each other to form a ring; 1 is an integer of 0 to 2; system represents an integer of 0-8; X - line represents a non-nucleophilic anion; in formula (1-2), M based an alkyl group, a cycloalkyl group, an aryl group or a benzyl group, having the ring structure, the ring structure system may also contain an oxygen atom, a sulfur atom, an ester bond, acyl amine linkage, or a carbon - carbon double bond; R 1c and R 2c each independently represent a line a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, a cyano group or An aryl group; R x and R y each independently represent an alkyl group, a cycloalkyl group, a 2-sided oxyalkyl group, an alkoxycarbonylalkyl group, an allyl group, or a vinyl group; R x and R y may also be combined. Form a ring; M, R 1c and R At least two of 2c may also be combined to form a ring, and the ring structure may also contain a carbon-carbon double bond; the X - line represents a non-nucleophilic anion; In the general formulae (S1) to (S3), R 1 to R 7 each independently represent an alkyl group which may have a substituent, a cycloalkyl group which may have a substituent, or an aryl group which may have a substituent; R 1 and R 2 , R 3 and R 4 , or R 6 and R 7 may be bonded to each other to form a ring; in the formula (S4), R 8 and R 9 each independently represent an alkane which may have a substituent. The two groups may also be combined with each other to form a ring. 如申請專利範圍第1項之感光化射線性或感放射線性樹脂組成物,其中樹脂(A)含有含內酯構造之重複單元。 The photosensitive ray-sensitive or radiation-sensitive resin composition of claim 1, wherein the resin (A) contains a repeating unit having a lactone structure. 如申請專利範圍第1或2項之感光化射線性或感放射線性樹脂組成物,其中樹脂(A)含有具有酸分解性基之重複單元,該酸分解性基含有單環或多環的脂環構造。 The photosensitive ray-sensitive or radiation-sensitive resin composition according to claim 1 or 2, wherein the resin (A) contains a repeating unit having an acid-decomposable group containing a monocyclic or polycyclic ester Ring construction. 如申請專利範圍第1項之感光化射線性或感放射線性樹脂組成物,其係可應用於液浸曝光。 The photosensitive ray-sensitive or radiation-sensitive resin composition of claim 1 of the patent application is applicable to liquid immersion exposure. 如申請專利範圍第1項之感光化射線性或感放射線性樹脂組成物,其中以組成物之總固體成分作為基準之化合物(B)的含有率為10至30質量%。 The photosensitive ray-sensitive or radiation-sensitive resin composition according to the first aspect of the invention, wherein the content of the compound (B) based on the total solid content of the composition is 10 to 30% by mass. 如申請專利範圍第1項之感光化射線性或感放射線性樹脂組成物,其中以感光化射線性或感放射線性樹脂組成物之總固體成分作為基準之樹脂(C)的含有率為0.01至10質量%。 The photosensitive ray-sensitive or radiation-sensitive resin composition according to the first aspect of the invention, wherein the content of the resin (C) based on the total solid content of the sensitizing ray-sensitive or radiation-sensitive resin composition is 0.01 to 10% by mass. 如申請專利範圍第1項之感光化射線性或感放射線性樹脂組成物,其中樹脂(C)含有具有至少兩個以上之極性變換基的重複單元。 A photosensitive ray-sensitive or radiation-sensitive resin composition according to claim 1, wherein the resin (C) contains a repeating unit having at least two or more polar converting groups. 如申請專利範圍第1項之感光化射線性或感放射線性樹脂組成物,其中混合溶劑(D)含有γ-丁內酯作為由通式(S1)至(S4)表示之群組中選出之至少1種溶劑。 A photosensitive ray-sensitive or radiation-sensitive resin composition according to claim 1, wherein the mixed solvent (D) contains γ-butyrolactone as a group selected from the group consisting of the general formulae (S1) to (S4). At least one solvent. 如申請專利範圍第1項之感光化射線性或感放射線性樹脂組成物,其中混合溶劑(D)含有環己酮作為由通式(S1) 至(S4)表示之群組中選出之至少1種溶劑。 The photosensitive ray-sensitive or radiation-sensitive resin composition of claim 1, wherein the mixed solvent (D) contains cyclohexanone as the general formula (S1) At least one solvent selected from the group indicated by (S4). 如申請專利範圍第1項之感光化射線性或感放射線性樹脂組成物,其中混合溶劑(D)不含有質子性溶劑。 The photosensitive ray-sensitive or radiation-sensitive resin composition of claim 1, wherein the mixed solvent (D) does not contain a protic solvent. 如申請專利範圍第1項之感光化射線性或感放射線性樹脂組成物,其中混合溶劑(D)含有丙二醇單甲基醚乙酸酯50質量%以上。 The photosensitive ray-sensitive or radiation-sensitive resin composition according to claim 1, wherein the mixed solvent (D) contains propylene glycol monomethyl ether acetate in an amount of 50% by mass or more. 一種圖案形成方法,其含有使用如申請專利範圍第1項之感光化射線性或感放射線性樹脂組成物形成膜之步驟、曝光該膜之步驟、及顯影之步驟。 A pattern forming method comprising the steps of forming a film using a photosensitive ray- or radiation-sensitive resin composition as in the first aspect of the patent application, the step of exposing the film, and the step of developing. 如申請專利範圍第12項之圖案形成方法,其中曝光為液浸曝光。The pattern forming method of claim 12, wherein the exposure is immersion exposure.
TW099129196A 2009-08-31 2010-08-31 Photosensitive ray- or radiation-sensitive resin composition and pattern forming method using same TWI497211B (en)

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Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100068207A (en) * 2008-12-12 2010-06-22 후지필름 가부시키가이샤 Polymerizable compound and polymer compound obtained by using the same
US9488910B2 (en) 2009-12-14 2016-11-08 Rohm And Haas Electronic Materials Llc Sulfonyl photoacid generators and photoresists comprising same
JP5761175B2 (en) * 2010-03-17 2015-08-12 Jsr株式会社 Radiation-sensitive resin composition and resist pattern forming method
KR101800043B1 (en) 2010-05-20 2017-11-21 제이에스알 가부시끼가이샤 Radiation-sensitive resin composition, method for forming resist pattern, polymer and compound
JP5747468B2 (en) * 2010-09-30 2015-07-15 Jsr株式会社 Radiation-sensitive resin composition and method for producing the same
JP5824320B2 (en) * 2010-10-26 2015-11-25 住友化学株式会社 Resist composition and method for producing resist pattern
JP6144005B2 (en) * 2010-11-15 2017-06-07 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC Composition comprising sugar component and photolithography method
JP5729079B2 (en) * 2011-03-28 2015-06-03 Jsr株式会社 Radiation sensitive resin composition for immersion exposure
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JP7373307B2 (en) * 2018-06-20 2023-11-02 住友化学株式会社 Salt, acid generator, resist composition, and method for producing resist pattern

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008065098A (en) * 2006-09-08 2008-03-21 Jsr Corp Radiation-sensitive resin composition and resist pattern forming method using the same

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3632410B2 (en) 1996-12-19 2005-03-23 Jsr株式会社 Positive radiation sensitive resin composition
JP4110319B2 (en) 2001-06-29 2008-07-02 Jsr株式会社 Radiation sensitive acid generator and radiation sensitive resin composition
JP4199958B2 (en) 2002-06-03 2008-12-24 Jsr株式会社 Radiation sensitive resin composition
JP4434762B2 (en) 2003-01-31 2010-03-17 東京応化工業株式会社 Resist composition
JP4469692B2 (en) 2004-09-14 2010-05-26 富士フイルム株式会社 Photosensitive composition, compound used for photosensitive composition, and pattern formation method using the photosensitive composition
JP4861767B2 (en) * 2005-07-26 2012-01-25 富士フイルム株式会社 Positive resist composition and pattern forming method using the same
JP4861781B2 (en) * 2005-09-13 2012-01-25 富士フイルム株式会社 Positive resist composition and pattern forming method using the same
JP5070801B2 (en) * 2005-10-28 2012-11-14 住友化学株式会社 Salt for acid generator of chemically amplified resist composition
JP5140354B2 (en) * 2006-09-19 2013-02-06 富士フイルム株式会社 Photosensitive composition, compound used for photosensitive composition, and pattern formation method using the photosensitive composition
JP4961312B2 (en) * 2007-09-26 2012-06-27 富士フイルム株式会社 Resist composition and pattern forming method using the same
JP5077355B2 (en) * 2007-10-01 2012-11-21 Jsr株式会社 Radiation sensitive composition

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008065098A (en) * 2006-09-08 2008-03-21 Jsr Corp Radiation-sensitive resin composition and resist pattern forming method using the same

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