TWI495005B - - Google Patents
Info
- Publication number
- TWI495005B TWI495005B TW101129589A TW101129589A TWI495005B TW I495005 B TWI495005 B TW I495005B TW 101129589 A TW101129589 A TW 101129589A TW 101129589 A TW101129589 A TW 101129589A TW I495005 B TWI495005 B TW I495005B
- Authority
- TW
- Taiwan
Links
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110446796.XA CN102522305B (zh) | 2011-12-27 | 2011-12-27 | 等离子体处理装置及聚焦环组件 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201327664A TW201327664A (zh) | 2013-07-01 |
| TWI495005B true TWI495005B (zh) | 2015-08-01 |
Family
ID=46293187
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101129589A TW201327664A (zh) | 2011-12-27 | 2012-08-15 | 等離子體處理裝置及聚焦環元件 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102522305B (zh) |
| TW (1) | TW201327664A (zh) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104051210B (zh) * | 2013-03-12 | 2016-05-11 | 中微半导体设备(上海)有限公司 | 一种减少门效应的等离子体处理装置 |
| CN103247507A (zh) * | 2013-04-08 | 2013-08-14 | 上海华力微电子有限公司 | 一种复合等离子聚焦环及该聚焦环的更换方法 |
| JP6435247B2 (ja) * | 2015-09-03 | 2018-12-05 | 新光電気工業株式会社 | 静電チャック装置及び静電チャック装置の製造方法 |
| CN107316795B (zh) * | 2016-04-26 | 2020-01-03 | 北京北方华创微电子装备有限公司 | 一种聚焦环和等离子体处理装置 |
| JP2019220497A (ja) * | 2018-06-15 | 2019-12-26 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
| JP7115942B2 (ja) * | 2018-09-06 | 2022-08-09 | 東京エレクトロン株式会社 | 載置台、基板処理装置、エッジリング及びエッジリングの搬送方法 |
| CN111223735B (zh) * | 2018-11-26 | 2022-08-12 | 无锡华润上华科技有限公司 | 半导体器件孔结构的刻蚀方法和刻蚀设备 |
| CN111524783A (zh) * | 2020-04-10 | 2020-08-11 | 华虹半导体(无锡)有限公司 | 等离子体处理装置 |
| CN111968903B (zh) * | 2020-08-24 | 2024-03-26 | 北京北方华创微电子装备有限公司 | 半导体工艺设备及聚焦环的加工方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070000614A1 (en) * | 2003-03-21 | 2007-01-04 | Tokyo Electron Limited | Method and apparatus for reducing substrate backside deposition during processing |
| US20090223810A1 (en) * | 2007-06-28 | 2009-09-10 | Rajinder Dhindsa | Methods and arrangements for plasma processing system with tunable capacitance |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6113731A (en) * | 1997-01-02 | 2000-09-05 | Applied Materials, Inc. | Magnetically-enhanced plasma chamber with non-uniform magnetic field |
| CN101996843B (zh) * | 2003-01-07 | 2013-05-01 | 东京毅力科创株式会社 | 等离子体处理装置及聚焦环 |
-
2011
- 2011-12-27 CN CN201110446796.XA patent/CN102522305B/zh active Active
-
2012
- 2012-08-15 TW TW101129589A patent/TW201327664A/zh unknown
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070000614A1 (en) * | 2003-03-21 | 2007-01-04 | Tokyo Electron Limited | Method and apparatus for reducing substrate backside deposition during processing |
| US20090223810A1 (en) * | 2007-06-28 | 2009-09-10 | Rajinder Dhindsa | Methods and arrangements for plasma processing system with tunable capacitance |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102522305A (zh) | 2012-06-27 |
| CN102522305B (zh) | 2015-01-07 |
| TW201327664A (zh) | 2013-07-01 |