TWI494468B - - Google Patents

Info

Publication number
TWI494468B
TWI494468B TW101151255A TW101151255A TWI494468B TW I494468 B TWI494468 B TW I494468B TW 101151255 A TW101151255 A TW 101151255A TW 101151255 A TW101151255 A TW 101151255A TW I494468 B TWI494468 B TW I494468B
Authority
TW
Taiwan
Application number
TW101151255A
Other languages
Chinese (zh)
Other versions
TW201348509A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of TW201348509A publication Critical patent/TW201348509A/en
Application granted granted Critical
Publication of TWI494468B publication Critical patent/TWI494468B/zh

Links

TW101151255A 2012-05-16 2012-12-28 Mounting table used in vacuum treatment device TW201348509A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210153374.8A CN103422072B (en) 2012-05-16 2012-05-16 A kind of mounting table for vacuum treatment installation

Publications (2)

Publication Number Publication Date
TW201348509A TW201348509A (en) 2013-12-01
TWI494468B true TWI494468B (en) 2015-08-01

Family

ID=49647449

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101151255A TW201348509A (en) 2012-05-16 2012-12-28 Mounting table used in vacuum treatment device

Country Status (2)

Country Link
CN (1) CN103422072B (en)
TW (1) TW201348509A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5639343A (en) * 1995-12-13 1997-06-17 Watkins-Johnson Company Method of characterizing group III-V epitaxial semiconductor wafers incorporating an etch stop layer
US6066204A (en) * 1997-01-08 2000-05-23 Bandwidth Semiconductor, Llc High pressure MOCVD reactor system
US20030008070A1 (en) * 2001-06-12 2003-01-09 Applied Materials,Inc Low-resistivity tungsten from high-pressure chemical vapor deposition using metal-organic precursor
TW200933797A (en) * 2007-12-06 2009-08-01 Ulvac Inc Vacuum processing apparatus and substrate processing method
US8043471B2 (en) * 2006-03-31 2011-10-25 Tokyo Electron Limited Plasma processing apparatus

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7102871B2 (en) * 2003-10-29 2006-09-05 Taiwan Semiconductor Manufacturing Co,, Ltd. Electrostatic chuck assembly having disassembling device
JP4702799B2 (en) * 2006-03-17 2011-06-15 ルネサスエレクトロニクス株式会社 Bolt and semiconductor manufacturing equipment
JP4905375B2 (en) * 2008-01-30 2012-03-28 住友電気工業株式会社 Support structure for wafer holder
KR20110121370A (en) * 2010-04-30 2011-11-07 엘에스메카피온 주식회사 Connecting means for spin chuck and shaft of spin motor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5639343A (en) * 1995-12-13 1997-06-17 Watkins-Johnson Company Method of characterizing group III-V epitaxial semiconductor wafers incorporating an etch stop layer
US6066204A (en) * 1997-01-08 2000-05-23 Bandwidth Semiconductor, Llc High pressure MOCVD reactor system
US20030008070A1 (en) * 2001-06-12 2003-01-09 Applied Materials,Inc Low-resistivity tungsten from high-pressure chemical vapor deposition using metal-organic precursor
US8043471B2 (en) * 2006-03-31 2011-10-25 Tokyo Electron Limited Plasma processing apparatus
TW200933797A (en) * 2007-12-06 2009-08-01 Ulvac Inc Vacuum processing apparatus and substrate processing method

Also Published As

Publication number Publication date
CN103422072A (en) 2013-12-04
TW201348509A (en) 2013-12-01
CN103422072B (en) 2015-09-02

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