TWI494467B - - Google Patents
Info
- Publication number
- TWI494467B TWI494467B TW101144512A TW101144512A TWI494467B TW I494467 B TWI494467 B TW I494467B TW 101144512 A TW101144512 A TW 101144512A TW 101144512 A TW101144512 A TW 101144512A TW I494467 B TWI494467 B TW I494467B
- Authority
- TW
- Taiwan
Links
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210096716.7A CN102618845B (zh) | 2012-04-01 | 2012-04-01 | 具有遮挡板装置的反应器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201341586A TW201341586A (zh) | 2013-10-16 |
| TWI494467B true TWI494467B (zh) | 2015-08-01 |
Family
ID=46559039
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101144512A TW201341586A (zh) | 2012-04-01 | 2012-11-28 | 具有遮擋板裝置的反應器 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102618845B (zh) |
| TW (1) | TW201341586A (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11680316B2 (en) | 2020-10-21 | 2023-06-20 | Industrial Technology Research Institute | Deposition apparatus |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103074595A (zh) * | 2012-09-07 | 2013-05-01 | 光达光电设备科技（嘉兴）有限公司 | 用于气相沉积工艺的反应腔室 |
| CN105463407B (zh) * | 2014-09-05 | 2018-12-07 | 沈阳拓荆科技有限公司 | 原子层沉积设备 |
| CN104988578B (zh) * | 2015-07-24 | 2017-08-25 | 哈尔滨工业大学 | 一种利用等离子体挡板优化单晶金刚石同质外延生长的方法 |
| CN106702351B (zh) * | 2015-11-17 | 2020-01-07 | 中微半导体设备(上海)股份有限公司 | 带遮挡板的限流环装置与化学气相沉积设备及其调节方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5831081A (ja) * | 1981-08-17 | 1983-02-23 | Teijin Ltd | 対向タ−ゲツト式スパツタ装置 |
| US6039811A (en) * | 1996-06-08 | 2000-03-21 | Samsung Electronics Co., Ltd. | Apparatus for fabricating polysilicon film for semiconductor device |
| US6086362A (en) * | 1998-05-20 | 2000-07-11 | Applied Komatsu Technology, Inc. | Multi-function chamber for a substrate processing system |
| US6111225A (en) * | 1996-02-23 | 2000-08-29 | Tokyo Electron Limited | Wafer processing apparatus with a processing vessel, upper and lower separately sealed heating vessels, and means for maintaining the vessels at predetermined pressures |
| CN101809724A (zh) * | 2007-09-29 | 2010-08-18 | 东京毅力科创株式会社 | 等离子体处理装置和等离子体处理方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6902623B2 (en) * | 2001-06-07 | 2005-06-07 | Veeco Instruments Inc. | Reactor having a movable shutter |
-
2012
- 2012-04-01 CN CN201210096716.7A patent/CN102618845B/zh active Active
- 2012-11-28 TW TW101144512A patent/TW201341586A/zh unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5831081A (ja) * | 1981-08-17 | 1983-02-23 | Teijin Ltd | 対向タ−ゲツト式スパツタ装置 |
| US6111225A (en) * | 1996-02-23 | 2000-08-29 | Tokyo Electron Limited | Wafer processing apparatus with a processing vessel, upper and lower separately sealed heating vessels, and means for maintaining the vessels at predetermined pressures |
| US6039811A (en) * | 1996-06-08 | 2000-03-21 | Samsung Electronics Co., Ltd. | Apparatus for fabricating polysilicon film for semiconductor device |
| US6086362A (en) * | 1998-05-20 | 2000-07-11 | Applied Komatsu Technology, Inc. | Multi-function chamber for a substrate processing system |
| CN101809724A (zh) * | 2007-09-29 | 2010-08-18 | 东京毅力科创株式会社 | 等离子体处理装置和等离子体处理方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11680316B2 (en) | 2020-10-21 | 2023-06-20 | Industrial Technology Research Institute | Deposition apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102618845B (zh) | 2014-06-11 |
| TW201341586A (zh) | 2013-10-16 |
| CN102618845A (zh) | 2012-08-01 |