TWI487145B - Light emitting diode device for a pico projection system - Google Patents

Light emitting diode device for a pico projection system Download PDF

Info

Publication number
TWI487145B
TWI487145B TW099131613A TW99131613A TWI487145B TW I487145 B TWI487145 B TW I487145B TW 099131613 A TW099131613 A TW 099131613A TW 99131613 A TW99131613 A TW 99131613A TW I487145 B TWI487145 B TW I487145B
Authority
TW
Taiwan
Prior art keywords
light
emitting diode
diode device
substrate
led
Prior art date
Application number
TW099131613A
Other languages
Chinese (zh)
Other versions
TW201214782A (en
Inventor
yi wei Chen
Po Yu Chen
Original Assignee
Everlight Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Everlight Electronics Co Ltd filed Critical Everlight Electronics Co Ltd
Priority to TW099131613A priority Critical patent/TWI487145B/en
Publication of TW201214782A publication Critical patent/TW201214782A/en
Application granted granted Critical
Publication of TWI487145B publication Critical patent/TWI487145B/en

Links

Landscapes

  • Led Device Packages (AREA)

Description

用於一微型投影系統之發光二極體裝置Light-emitting diode device for a miniature projection system

本發明係關於一種發光二極體裝置,特別是關於一種可應用於一微型投影系統中之發光二極體裝置,藉以使微型投影系統體積更為小型化。The present invention relates to a light-emitting diode device, and more particularly to a light-emitting diode device that can be applied to a micro-projection system, thereby making the micro-projection system more compact.

因應現今市場對電子產品的輕薄短小需求趨勢,傳統的投影機亦開始朝微型化發展。微型投影機(Pico Projector)之使用需求係設定為便於隨身攜帶,不僅製成可攜的微型投影機外,更應用於各式現有的電子產品上,例如內建於手機、多媒體播放器、個人數位助理(Personal Digital Assistant,PDA)、筆記型電腦等,藉以擴充電子產品之功能多樣性。In response to the current trend of thin and light demand for electronic products in the market, traditional projectors have begun to develop toward miniaturization. The use requirements of the Pico Projector are set to be portable, not only for portable pico projectors, but also for various existing electronic products, such as built-in mobile phones, multimedia players, and individuals. Digital Personal Assistant (PDA), notebook computers, etc., to expand the functional diversity of electronic products.

基於結構上的精簡輕量需求及光學上的亮度表現,目前微型投影機多採用紅光、綠光、藍光三原色之發光二極體作為光源,直接將三色光線投射至數位微鏡裝置(Digital Micromirro Device,DMD)進行成像。故與一般投影機相較下,微型投影機省卻了彩色濾光片(color filter)等其他光學元件,大幅縮減體積、降低製造成本,更因發光二極體之各項特性而發揮使用壽命長、色彩表現範圍大等優勢。Based on the compact and lightweight requirements of the structure and the optical brightness performance, the current micro-projector uses the light-emitting diodes of red, green and blue light as the light source to directly project the three-color light to the digital micro-mirror device (Digital Micromirro Device, DMD) for imaging. Therefore, compared with the general projector, the micro projector eliminates other optical components such as color filters, greatly reduces the volume, reduces the manufacturing cost, and has a long service life due to various characteristics of the light-emitting diode. , the color range of performance and other advantages.

然而目前運用於電子產品之微型投影機中,受到發光二極體裝置之限制,體積均稍嫌過大且笨重,電力負荷亦有所不足。However, in the pico projectors currently used in electronic products, they are limited by the light-emitting diode device, and the volume is slightly too large and cumbersome, and the power load is also insufficient.

綜上所述,發展出一種在體積上更適於應用在微型投影機,且具有一定之發光效率、色彩表現及應用彈性之發光二極體裝置乃此業界亟需努力之目標。In summary, the development of a light-emitting diode device that is more suitable for use in a micro projector and has a certain luminous efficiency, color performance and application flexibility is an urgent need in the industry.

本發明之一目的在於提供一種用於一微型投影系統之發光二極體裝置,其具有輕薄短小之體積,且能提供良好亮度及色彩表現,便於應用在可隨身攜帶之微型投影系統中。An object of the present invention is to provide a light-emitting diode device for a micro-projection system, which has a light and thin volume, and can provide good brightness and color performance, and is convenient for use in a micro-projection system that can be carried around.

為達上述目的,本發明揭露一種用於一微型投影系統之發光二極體裝置,包含一底部基板、一陽極部、至少一陰極部、至少一發光二極體(light emitting diode,LED)晶片以及一透光元件。陽極部及至少一陰極部均設置於底部基板上,至少一LED晶片設置於陽極部上並與陽極部及至少一陰極部電性連接,透光元件覆蓋於底部基板上,以界定一空腔。To achieve the above objective, the present invention discloses a light emitting diode device for a micro projection system, comprising a bottom substrate, an anode portion, at least one cathode portion, and at least one light emitting diode (LED) wafer. And a light transmissive element. The anode portion and the at least one cathode portion are disposed on the bottom substrate, and at least one LED chip is disposed on the anode portion and electrically connected to the anode portion and the at least one cathode portion, and the light transmitting member covers the bottom substrate to define a cavity.

為達上述目的,本發明更揭露一種用於一微型投影系統之發光二極體裝置,包含一底部基板、一陽極部、至少一陰極部、至少一LED晶片、一環繞基板以及一透光元件。陽極部及至少一陰極部均設置於底部基板上,至少一LED晶片設置於陽極部上並與陽極部及至少一陰極部電性連接,環繞基板具有一環繞部及一中空部,透光元件係直接覆蓋於環繞基板上,以中空部界定出空腔。In order to achieve the above object, the present invention further discloses a light emitting diode device for a micro projection system, comprising a bottom substrate, an anode portion, at least one cathode portion, at least one LED chip, a surrounding substrate, and a light transmitting component. . The anode portion and the at least one cathode portion are disposed on the bottom substrate, and at least one LED chip is disposed on the anode portion and electrically connected to the anode portion and the at least one cathode portion, and the surrounding substrate has a surrounding portion and a hollow portion, and the transparent member It is directly covered on the surrounding substrate, and the cavity is defined by the hollow portion.

為讓上述目的、技術特徵和優點能更明顯易懂,下文係以較佳實施例配合所附圖式進行詳細說明。The above objects, technical features and advantages will be more apparent from the following description.

以下將透過實施例來解釋本發明之發光二極體裝置,然而,關於實施例之說明僅為闡釋本發明,而非用以限制本發明。須說明者,下述實施例中,以下實施例以及圖式中,與本發明非直接相關之元件已省略而未繪示;且圖示中各元件之尺寸及相對位置關 係僅用以示意俾便瞭解,非用以限制實際比例及尺寸大小。The illuminating diode device of the present invention will be explained below by way of examples. However, the description of the embodiments is merely illustrative of the invention and is not intended to limit the invention. It should be noted that in the following embodiments, in the following embodiments and drawings, components that are not directly related to the present invention have been omitted and are not shown; and the dimensions and relative positions of the components in the drawings are It is only used to illustrate and understand, not to limit the actual proportion and size.

如第1A圖至第1C圖所示,本發明之第一實施例係為一種用於一微型投影系統之發光二極體(light emitting diode,LED)裝置1,發光二極體裝置1包含一底部基板101、一陽極部103、二陰極部105、一發光二極體晶片107、一環繞基板109以及一透光元件111。由於本實施例之發光二極體裝置1僅具有單一發光二極體晶片107,故又可稱單晶發光二極體裝置。As shown in FIGS. 1A to 1C, the first embodiment of the present invention is a light emitting diode (LED) device 1 for a micro projection system, and the light emitting diode device 1 includes a The bottom substrate 101, an anode portion 103, two cathode portions 105, a light emitting diode wafer 107, a surrounding substrate 109, and a light transmitting member 111. Since the light-emitting diode device 1 of the present embodiment has only a single light-emitting diode wafer 107, it can also be called a single-crystal light-emitting diode device.

如圖所示,陽極部103及二陰極部105均設置於底部基板101上。發光二極體晶片107設置於陽極部103上,且發光二極體晶片107與陽極部103及其中一個陰極部105分別以引線電性連接。環繞基板109具有一環繞部109a及一中空部109b,透光元件111係直接覆蓋於環繞基板109之環繞部109a上,以中空部109b界定出空腔。As shown, the anode portion 103 and the two cathode portions 105 are both disposed on the base substrate 101. The light-emitting diode wafer 107 is disposed on the anode portion 103, and the light-emitting diode wafer 107 and the anode portion 103 and one of the cathode portions 105 are electrically connected by wires, respectively. The surrounding substrate 109 has a surrounding portion 109a and a hollow portion 109b. The light transmitting member 111 directly covers the surrounding portion 109a of the surrounding substrate 109, and defines a cavity with the hollow portion 109b.

由於本實施例中,每一發光二極體裝置1僅包含一發光二極體晶片107,為得到良好的投影光源品質,應用時可組合數個本實施例之發光二極體裝置1。舉例而言,微型投影系統中可採用三個本實施例之發光二極體裝置,而此等發光二極體裝置分別包含紅光、綠光及藍光三原色之發光二極體晶片。此外,發光二極體裝置之數量亦可因應需求而調整。In this embodiment, each of the light-emitting diode devices 1 includes only one light-emitting diode wafer 107. In order to obtain a good quality of the projection light source, a plurality of the light-emitting diode devices 1 of the present embodiment can be combined. For example, in the micro-projection system, three light-emitting diode devices of the present embodiment can be used, and the light-emitting diode devices respectively include light-emitting diode chips of three primary colors of red light, green light and blue light. In addition, the number of light-emitting diode devices can also be adjusted according to demand.

第1D圖係本發明第一實施例之發光二極體裝置另一實施態樣之上視圖。考量應用時可能會有操作電流過高的問題,故於本實施態樣中,發光二極體裝置1’更包含一齊納二極體(Zener diode)113,藉以使發光二極體裝置1’之電路穩壓。齊納二極體113係設 置於發光二極體裝置1’之陽極部103上,並以引線與二陰極部105其中之一電性連接。於本實施態樣中,係以單一齊納二極體113進行單一發光二極體晶片之穩壓,但本發明並不以此為限。於本實施態樣之發光二極體裝置1’中,其餘元件均與第一實施例之發光二極體裝置1相同,故於此不另贅述。1D is a top view of another embodiment of the light-emitting diode device of the first embodiment of the present invention. In the present embodiment, the LED device 1' further includes a Zener diode 113, so that the LED device 1' can be used. The circuit is regulated. Zener diode 113 series It is placed on the anode portion 103 of the light-emitting diode device 1', and is electrically connected to one of the two cathode portions 105 by a lead. In this embodiment, the voltage regulation of the single light-emitting diode chip is performed by a single Zener diode 113, but the invention is not limited thereto. In the light-emitting diode device 1' of the present embodiment, the remaining components are the same as those of the light-emitting diode device 1 of the first embodiment, and therefore will not be further described herein.

第2圖係本發明第二實施例之發光二極體裝置上視圖,本實施例之發光二極體裝置2與第一實施例之發光二極體裝置1類似,相異處僅在於電極部之數量及外型,以本實施例而言,發光二極體裝置2僅包含一陽極部201及一陰極部203。2 is a top view of a light-emitting diode device according to a second embodiment of the present invention. The light-emitting diode device 2 of the present embodiment is similar to the light-emitting diode device 1 of the first embodiment, and the difference is only in the electrode portion. In the present embodiment, the light-emitting diode device 2 includes only one anode portion 201 and one cathode portion 203.

如第3A圖至第3C圖所示,本發明之第三實施例亦為一種用於一微型投影系統之發光二極體裝置3,發光二極體裝置3包含一底部基板301、一陽極部303、二陰極部305、二發光二極體晶片307、一環繞基板309以及一透光元件311,二陰極部305分別與二發光二極體晶片307電性連接。由於本實施例之發光二極體裝置3具有二個發光二極體晶片307,故又可稱雙晶發光二極體裝置。本實施例之元件關係亦如第一實施例所述,故於此不另重言。As shown in FIG. 3A to FIG. 3C, the third embodiment of the present invention is also a light-emitting diode device 3 for a micro-projection system. The light-emitting diode device 3 includes a bottom substrate 301 and an anode portion. 303, two cathode portions 305, two light emitting diode wafers 307, a surrounding substrate 309, and a light transmitting element 311, and the two cathode portions 305 are electrically connected to the two light emitting diode wafers 307, respectively. Since the light-emitting diode device 3 of the present embodiment has two light-emitting diode wafers 307, it can also be called a double-crystal light-emitting diode device. The component relationship of this embodiment is also as described in the first embodiment, so it is not emphasized here.

於本實施例中,每一發光二極體裝置3包含二發光二極體晶片307,為得到良好的投影光源品質,應用時可組合數個本實施例之發光二極體裝置3。舉例而言,微型投影系統中可採用三個本實施例之發光二極體裝置,而此等發光二極體裝置分別包含紅光及綠光、綠光及藍光、藍光及紅光之發光二極體晶片。熟知本領域技術者亦可推及其他顏色之發光二極體晶片組合,舉例而言,各發光二極體裝置可包含同一顏色之發光二極體晶片,例如分別均為紅光、綠光及藍光。此外,發光二極體裝置之數量亦可因應需求 而調整。In the present embodiment, each of the light-emitting diode devices 3 includes two light-emitting diode wafers 307. In order to obtain a good quality of the projection light source, a plurality of the light-emitting diode devices 3 of the present embodiment can be combined. For example, in the micro-projection system, three light-emitting diode devices of the present embodiment can be used, and the light-emitting diode devices respectively include red and green light, green light, and blue light, blue light, and red light. Polar body wafer. Those skilled in the art can also push LED combinations of other colors. For example, each LED device can include a light-emitting diode chip of the same color, for example, red light, green light, and Blu-ray. In addition, the number of light-emitting diode devices can also meet the demand And adjust.

第3D圖係本發明第三實施例之發光二極體裝置另一實施態樣之上視圖。考量應用時可能會有操作電流過高的問題,故於本實施態樣中,發光二極體裝置3’更包含二齊納二極體313,藉以使發光二極體裝置3’之電路穩壓。齊納二極體313均設置於發光二極體裝置3’之陽極部303上,並分別以引線與相鄰之陰極部305電性連接。於本實施態樣中,係以二個齊納二極體313分別用於二片發光二極體晶片之穩壓;基於前文所述,亦可僅採用單一齊納二極體,藉以進行發光二極體晶片之穩壓動作。於本實施態樣之發光二極體裝置3’中,其餘元件均與第三實施例之發光二極體裝置3相同,故於此不另贅述。3D is a top view of another embodiment of the light-emitting diode device of the third embodiment of the present invention. In the present embodiment, the LED device 3' further includes a Zener diode 313, so that the circuit of the LED device 3' is stabilized. Pressure. The Zener diodes 313 are disposed on the anode portion 303 of the LED device 3', and are electrically connected to the adjacent cathode portions 305 by wires, respectively. In this embodiment, two Zener diodes 313 are respectively used for voltage regulation of two LED chips; based on the foregoing, only a single Zener diode can be used for illumination. The voltage regulation action of the diode chip. In the light-emitting diode device 3' of the present embodiment, the remaining components are the same as those of the light-emitting diode device 3 of the third embodiment, and therefore will not be further described herein.

第4A圖係本發明第四實施例之發光二極體裝置上視圖,本實施例之發光二極體裝置4與第三實施例之發光二極體裝置3類似,相異處僅在於電極部之外型設計,熟知本領域技術者應可輕易推及其他外觀態樣。4A is a top view of a light-emitting diode device according to a fourth embodiment of the present invention. The light-emitting diode device 4 of the present embodiment is similar to the light-emitting diode device 3 of the third embodiment, and the difference is only in the electrode portion. External design, those skilled in the art should be able to easily push other appearances.

第4B圖為本發明第四實施例之發光二極體裝置另一實施態樣之上視圖。考量應用時可能會有操作電流過高的問題,故於本實施態樣中,發光二極體裝置4’更包含二齊納二極體413,藉以使發光二極體裝置4’之電路穩壓。齊納二極體413均設置於發光二極體裝置4’之陽極部403上,並分別以引線與相鄰之陰極部405電性連接。於本實施態樣中,係以二個齊納二極體413分別用於二片發光二極體晶片之穩壓;如同前文所述,亦可僅採用單一齊納二極體,藉以進行發光二極體晶片之穩壓動作。於本實施態樣之發光二極體裝置4’中,其餘元件均與第四實施例之發光二極體 裝置4相同,故於此不另贅述。Fig. 4B is a top plan view showing another embodiment of the light emitting diode device of the fourth embodiment of the present invention. In the present embodiment, the LED device 4' further includes a Zener diode 413, so that the circuit of the LED device 4' is stabilized. Pressure. The Zener diodes 413 are disposed on the anode portion 403 of the light-emitting diode device 4', and are electrically connected to the adjacent cathode portions 405 by wires, respectively. In this embodiment, two Zener diodes 413 are respectively used for voltage regulation of two LED chips; as described above, only a single Zener diode can be used for illumination. The voltage regulation action of the diode chip. In the light-emitting diode device 4' of the present embodiment, the remaining components are the same as the light-emitting diode of the fourth embodiment. The device 4 is the same, so it will not be described here.

第5圖係本發明第五實施例之發光二極體裝置上視圖,同樣地,本實施例之發光二極體裝置5與第三實施例之發光二極體裝置3類似,相異處僅在於電極部之外型設計,熟知本領域技術者亦可輕易推及其他外觀態樣。5 is a top view of a light-emitting diode device according to a fifth embodiment of the present invention. Similarly, the light-emitting diode device 5 of the present embodiment is similar to the light-emitting diode device 3 of the third embodiment, and the difference is only The design of the electrode portion is external, and those skilled in the art can easily push other appearances.

如第6A圖至第6C圖所示,本發明之第六實施例亦為一種用於一微型投影系統之發光二極體裝置6。發光二極體裝置6包含一底部基板601、一陽極部603、四陰極部605、三發光二極體晶片607、一環繞基板609以及一透光元件611,三發光二極體晶片607分別與其中三個陰極部605電性連接。由於本實施例之發光二極體裝置6具有三個發光二極體晶片607,故又可稱三晶發光二極體裝置。本實施例之元件關係亦如第一實施例所述,故於此不另再言。As shown in FIGS. 6A to 6C, the sixth embodiment of the present invention is also a light-emitting diode device 6 for a micro-projection system. The LED device 6 includes a bottom substrate 601, an anode portion 603, four cathode portions 605, a three-emitting diode wafer 607, a surrounding substrate 609, and a light transmissive element 611. The three light emitting diode wafers 607 are respectively associated with Three of the cathode portions 605 are electrically connected. Since the light-emitting diode device 6 of the present embodiment has three light-emitting diode wafers 607, it can also be called a three-crystal light-emitting diode device. The component relationship of this embodiment is also as described in the first embodiment, so it will not be repeated here.

於本實施例中,每一發光二極體裝置6包含三發光二極體晶片607,為得到良好的投影光源品質,應用時可組合數個本實施例之發光二極體裝置6。舉例而言,微型投影系統中可採用至少一個本實施例之發光二極體裝置,而此種發光二極體裝置均包含紅光、綠光及藍光三原色之發光二極體晶片,亦即單一發光二極體裝置便可提供三原色之光線。熟知本領域技術者亦可推及其他顏色之發光二極體晶片組合,舉例而言,各發光二極體裝置可包含同一顏色之發光二極體晶片,例如分別均為紅光、綠光及藍光。此外,發光二極體裝置之數量亦可因應需求而調整。In the present embodiment, each of the light-emitting diode devices 6 includes a three-emitting diode wafer 607. In order to obtain a good quality of the projection light source, a plurality of the light-emitting diode devices 6 of the present embodiment can be combined. For example, at least one of the light-emitting diode devices of the present embodiment can be used in a micro-projection system, and the light-emitting diode device includes a light-emitting diode chip of three primary colors of red, green, and blue light, that is, a single The light-emitting diode device provides light of the three primary colors. Those skilled in the art can also push LED combinations of other colors. For example, each LED device can include a light-emitting diode chip of the same color, for example, red light, green light, and Blu-ray. In addition, the number of light-emitting diode devices can also be adjusted according to demand.

第6D圖係本發明第六實施例之發光二極體裝置另一實施態樣之上視圖。考量應用時可能會有操作電流過高的問題,故於本實施態樣中,發光二極體裝置6’更包含一齊納二極體613,藉以使 發光二極體裝置6’之電路穩壓。齊納二極體613係設置於發光二極體裝置6’之陽極部603上,並以引線與未和發光二極體晶片607電性連接之陰極部605電性連接。於本實施態樣中,僅以單一齊納二極體613作為三片發光二極體晶片607之穩壓;基於前文所述,亦可採用二個或三個齊納二極體進行發光二極體晶片之穩壓。於本實施態樣之發光二極體裝置6’中,其餘元件均與第六實施例之發光二極體裝置6相同,故於此不另贅述。Fig. 6D is a top view showing another embodiment of the light-emitting diode device of the sixth embodiment of the present invention. When the application is considered, there may be a problem that the operating current is too high. Therefore, in this embodiment, the LED device 6' further includes a Zener diode 613, thereby The circuit of the light-emitting diode device 6' is regulated. The Zener diode 613 is disposed on the anode portion 603 of the light-emitting diode device 6', and is electrically connected to the cathode portion 605 which is not electrically connected to the light-emitting diode wafer 607. In this embodiment, only a single Zener diode 613 is used as the voltage regulation of the three-emitting diode 607; based on the foregoing, two or three Zener diodes may be used to emit light. The regulation of the polar body chip. In the light-emitting diode device 6' of the present embodiment, the remaining components are the same as those of the light-emitting diode device 6 of the sixth embodiment, and therefore will not be further described herein.

第7A圖係本發明第七實施例之發光二極體裝置上視圖,本實施例之發光二極體裝置7與第六實施例之發光二極體裝置6類似,相異處僅在於電極部之外型設計,熟知本領域技術者應可輕易推及其他外觀態樣。7A is a top view of a light-emitting diode device according to a seventh embodiment of the present invention. The light-emitting diode device 7 of the present embodiment is similar to the light-emitting diode device 6 of the sixth embodiment, and the difference is only in the electrode portion. External design, those skilled in the art should be able to easily push other appearances.

第7B圖係本發明第七實施例之發光二極體裝置另一實施態樣之上視圖。考量應用時可能會有操作電流過高的問題,故於本實施態樣中,發光二極體裝置7’更包含二齊納二極體713,藉以使發光二極體裝置7’之電路穩壓。齊納二極體713均設置於發光二極體裝置7’之陽極部703上,並分別以引線與相鄰之陰極部705電性連接。於本實施態樣中,係以二個齊納二極體713作為三片發光二極體晶片之穩壓;基於前文所述,亦可採用單一或三個齊納二極體進行發光二極體晶片之穩壓動作。於本實施態樣之發光二極體裝置7’中,其餘元件均與第七實施例之發光二極體裝置7相同,故於此不另贅述。Fig. 7B is a top view showing another embodiment of the light emitting diode device of the seventh embodiment of the present invention. In the present embodiment, the LED device 7' further includes a Zener diode 713, so that the circuit of the LED device 7' is stabilized. Pressure. The Zener diodes 713 are disposed on the anode portion 703 of the light-emitting diode device 7', and are electrically connected to the adjacent cathode portions 705 by wires, respectively. In this embodiment, the two Zener diodes 713 are used as the voltage regulator of the three-emitting diode chip; based on the foregoing, a single or three Zener diodes may be used for the light-emitting diode. The voltage regulation action of the body wafer. In the light-emitting diode device 7' of the present embodiment, the remaining components are the same as those of the light-emitting diode device 7 of the seventh embodiment, and therefore will not be further described herein.

如第8A圖至第8C圖所示,本發明第八實施例同為一種用於一微型投影系統之發光二極體裝置8,發光二極體裝置8包含一底部基板801、一陽極部803、四陰極部805、四發光二極體晶片807、 一環繞基板809以及一透光元件811,四陰極部805分別與四發光二極體晶片807電性連接。由於本實施例之發光二極體裝置8具有四個發光二極體晶片807,故又可稱四晶發光二極體裝置。本實施例之元件關係亦如第一實施例所言,故於此不另再述。該四個發光二極體(LED)晶片807可為一紅光LED晶片、二綠光LED晶片及一藍光LED晶片。As shown in FIG. 8A to FIG. 8C, the eighth embodiment of the present invention is also a light-emitting diode device 8 for a micro-projection system. The LED device 8 includes a bottom substrate 801 and an anode portion 803. Four cathode portions 805, four light emitting diode wafers 807, A four-cavity portion 805 is electrically connected to the four-light-emitting diode wafer 807, respectively, around the substrate 809 and a light-transmitting member 811. Since the light-emitting diode device 8 of the present embodiment has four light-emitting diode chips 807, it can also be called a four-crystal light-emitting diode device. The component relationship of this embodiment is also as described in the first embodiment, and therefore will not be described again. The four light emitting diode (LED) wafers 807 can be a red LED chip, a two green LED chip, and a blue LED chip.

第8D圖係本發明第八實施例之發光二極體裝置另一實施態樣之上視圖。考量應用時可能會有操作電流過高的問題,故於本實施態樣中,發光二極體裝置8’更包含四齊納二極體813,藉以使發光二極體裝置8’之電路穩壓。齊納二極體813均設置於發光二極體裝置8’之陽極部803上,並分別以引線與相鄰之陰極部805電性連接。於本實施態樣中,係以四個齊納二極體813分別用於四片發光二極體晶片之穩壓;基於前文所述,亦可採用單一或其他數目之齊納二極體,藉以進行發光二極體晶片之穩壓動作。於本實施態樣之發光二極體裝置8’中,其餘元件均與第八實施例之發光二極體裝置8相同,故於此不另贅述。Fig. 8D is a top view showing another embodiment of the light-emitting diode device of the eighth embodiment of the present invention. In the embodiment, the LED device 8' further includes a four-nano diode 813, so that the circuit of the LED device 8' is stabilized. Pressure. The Zener diodes 813 are disposed on the anode portion 803 of the LED device 8', and are electrically connected to the adjacent cathode portions 805 by wires, respectively. In this embodiment, four Zener diodes 813 are respectively used for voltage regulation of four LED chips; based on the foregoing, a single or other number of Zener diodes may also be used. Thereby, the voltage regulation action of the light emitting diode chip is performed. In the light-emitting diode device 8' of the present embodiment, the remaining components are the same as those of the light-emitting diode device 8 of the eighth embodiment, and thus will not be further described herein.

第9圖係本發明第九實施例之發光二極體裝置上視圖,本實施例之發光二極體裝置9與第八實施例之發光二極體裝置8類似,相異處僅在於電極部之外型設計,熟知本領域技術者應可輕易推及其他外觀態樣。9 is a top view of a light-emitting diode device according to a ninth embodiment of the present invention. The light-emitting diode device 9 of the present embodiment is similar to the light-emitting diode device 8 of the eighth embodiment, and the difference is only in the electrode portion. External design, those skilled in the art should be able to easily push other appearances.

於上述各實施例及各實施態樣中,透光元件係為一玻璃,尤其係為一抗光折射玻璃。於其他實施態樣中,透光元件亦可採用一依光學所設計之透鏡;在實際應用上若微型投影系統不需覆蓋透 明玻璃或透鏡,亦可僅蓋以簡易的透鏡以便出貨。再者,前述說明之發光二極體裝置均具有環繞基板,而於實際應用時,亦可省略此元件。In each of the above embodiments and embodiments, the light transmissive element is a glass, especially a light resistant refractive glass. In other implementations, the light transmissive element can also be an optically designed lens; in practical applications, the micro projection system does not need to be covered. A clear glass or lens can also be covered with a simple lens for shipment. Furthermore, the above-described light-emitting diode devices each have a surrounding substrate, and may be omitted in practical applications.

依前段所述,熟知本領域技術者可分別推及:如第10A圖之剖面圖所示,採用抗光折射之平板玻璃且具有環繞基板之發光二極體裝置10a;如第10B圖之剖面圖所示,採用抗光折射之ㄇ形玻璃且不具有環繞基板之發光二極體裝置10b;如第11A圖之剖面圖所示,採用凸透鏡且具有環繞基板之發光二極體裝置11a;如第11B圖之剖面圖所示,採用凸透鏡且不具有環繞基板之發光二極體裝置11b。As described in the preceding paragraph, those skilled in the art can separately push: as shown in the cross-sectional view of FIG. 10A, a flat glass with light refraction and a light-emitting diode device 10a surrounding the substrate; a section as shown in FIG. 10B The figure shows a light-emitting diode device 10b that is resistant to light-refracting and does not have a surrounding substrate; as shown in the cross-sectional view of FIG. 11A, a convex lens is used and has a light-emitting diode device 11a surrounding the substrate; As shown in the cross-sectional view of Fig. 11B, a convex lens is used and the light-emitting diode device 11b surrounding the substrate is not provided.

此外,上述各實施例及各實施態樣中,環繞基板係為一低溫共燒陶瓷(Low temperature co-fired ceramic,LTCC),底部基板則係為一氮化鋁(AlN),氮化鋁是極少數同時具備高熱傳導係數及電絕緣性的非金屬固體,屬於一種良好的陶瓷基板材料。由於環繞基板與底部基板均係採用陶瓷基板,散熱性良好,且因發光二極體裝置應用端之操作電流不高,故在散熱方面不會產生任何問題。In addition, in each of the above embodiments and embodiments, the surrounding substrate is a low temperature co-fired ceramic (LTCC), and the bottom substrate is an aluminum nitride (AlN), and the aluminum nitride is A very small number of non-metallic solids with high thermal conductivity and electrical insulation are a good ceramic substrate material. Since the ceramic substrate is used for both the surrounding substrate and the bottom substrate, heat dissipation is good, and since the operating current of the application end of the light-emitting diode device is not high, there is no problem in heat dissipation.

此外,環繞基板上均設有供產線機台進行對位之對位孔,此對位孔可依產線機台特性進行設計,藉此在發光二極體裝置之製造組裝將具有更良好的精準度。In addition, a positioning hole for alignment of the production line machine is arranged on the surrounding substrate, and the alignment hole can be designed according to the characteristics of the production line machine, thereby manufacturing and assembling the LED device more preferably. The accuracy.

再者,在本發明中,考量電極部在模組端之吃錫面積,本發明之發光二極體裝置中,於現有製程製作允許之條件下將背面之電極部面積設計至最大,並將散熱電極部及陽極部共用,藉以促進發光二極體晶片之散熱。Furthermore, in the present invention, in consideration of the tin area of the electrode portion at the module end, in the light-emitting diode device of the present invention, the area of the electrode portion of the back surface is designed to the maximum under the conditions of the existing process fabrication, and The heat dissipating electrode portion and the anode portion are shared to promote heat dissipation of the light emitting diode chip.

本發明之發光二極體晶片可依應用需求而採用垂直式晶片或水 平式晶片。此外,發光二極體晶片之電極型式亦不限定,當發光二極體晶片之兩電極係分別位於底部時,每一發光二極體晶片之兩電極可實質上與陽極部和相應之陰極部接觸,藉以達到電性連接;而當發光二極體晶片之兩電極係分別位於頂部時,每一發光二極體晶片之兩電極可分別透過打線而與陽極部和相應之陰極部電性連接。The LED chip of the invention can adopt vertical wafer or water according to application requirements Flat wafer. In addition, the electrode type of the LED chip is not limited. When the two electrodes of the LED chip are respectively located at the bottom, the two electrodes of each LED chip can be substantially opposite to the anode portion and the corresponding cathode portion. Contacting, thereby achieving electrical connection; and when the two electrode systems of the LED chip are respectively located at the top, the two electrodes of each LED chip can be electrically connected to the anode portion and the corresponding cathode portion through the wire bonding respectively .

對於微型投影系統來說,封裝內晶片間距越小越好,為因應基板製程以及固晶機台所能達到之極限,本發明將電極部作新的設計,除了在基板製程方面不會有任何問題外,也可因應固晶機台的極限及機台之誤差。此外對於元件品質來說,本發明之共陽極設計易於進行檢測,無異提供了出貨品質更可靠的保障。For the micro-projection system, the smaller the pitch of the wafer in the package, the better. In order to meet the limits of the substrate process and the die bonding machine, the present invention has a new design of the electrode portion, except that there is no problem in the substrate process. In addition, it can also respond to the limits of the die bonding machine and the error of the machine. In addition, for the component quality, the common anode design of the present invention is easy to detect, which provides a more reliable guarantee of shipping quality.

若要將微型投影系統整合於手機中,微型投影系統體積至少要小於6cc,而總厚度則需小於7mm。此發光二極體裝置封裝的設計為配合晶片大小以及製程上的問題,並配合微型投影系統以薄為導向,將此基板設計至能容許以上問題之最小尺寸,寬度僅為3.6mm的設計,有利於投影系統微型化,未來在薄型化的手機及其他電子產品市場中將佔有尺寸上的優勢。To integrate a micro-projection system into a mobile phone, the micro-projection system must be at least 6 cc in volume and less than 7 mm in total thickness. The LED device package is designed to match the size of the wafer and the process, and is thin-oriented with the micro-projection system. The substrate is designed to be the smallest size that can tolerate the above problems, and the width is only 3.6mm. It is conducive to the miniaturization of the projection system, and will occupy the size advantage in the thin mobile phone and other electronic products market in the future.

此款基板最大的特點就是固晶區之電極部設計。由於微型投影系統係以小螢幕作為基礎,藉以放大成像為大螢幕,因此微型投影系統內部可容許的缺陷量極低,而根據光展量(Etendue)之公式(Etendue=A×Ω)可知,微型投影系統中之光源設計主要重點在於發光面積及發光角度。The biggest feature of this substrate is the design of the electrode part of the die bonding area. Since the micro-projection system is based on a small screen, and the magnified image is a large screen, the amount of defects that can be tolerated inside the micro-projection system is extremely low, and according to the formula of the etendue (Etendue=A×Ω), The main focus of the light source design in the micro-projection system is the light-emitting area and the angle of illumination.

為了使發光面積縮小,必須將發光二極體之晶片間距縮小,亦 即晶片間距越小對於提升微型投影系統之效率越佳,是故本發明將固晶區設計為一個可容納數顆發光二極體晶片的大面積陽極部(亦即共陽極),而未直接地區分出數個陽極部。藉此,在量產機台的能力允許範圍內(機台之誤差大約為±40μm),便可將晶片間距大幅縮小(<0.07mm),可增加微型投影系統輸出的效率,更能符合客戶應用端的需求。本發明目前已將基板之功能區面積縮小至製程能力的極限,隨著未來製程進步,勢必能再將本發明之發光二極體裝置尺寸再進一步縮小。In order to reduce the light-emitting area, the wafer pitch of the light-emitting diode must be reduced. That is, the smaller the pitch of the wafer is, the better the efficiency of the microprojection system is. Therefore, the present invention designs the solid crystal region as a large-area anode portion (ie, a common anode) capable of accommodating a plurality of light-emitting diode chips, but not directly The area is divided into several anode sections. Therefore, within the allowable range of the capacity of the production machine (the error of the machine is about ±40μm), the wafer pitch can be greatly reduced (<0.07mm), which can increase the output efficiency of the micro-projection system and better meet the customer's requirements. Application requirements. At present, the functional area of the substrate has been reduced to the limit of the process capability, and as the future process progresses, the size of the light-emitting diode device of the present invention is further reduced.

針對不同微型投影系統及其內部光路設計,本發明之發光二極體裝置分別有單晶、兩晶、三晶及四晶之封裝形式,對於光路設計來說,可設計成三條、兩條及一條光路,對微型投影系統之製造設計廠商而言,設計方案及材料選擇較為多元,無需配合發光二極體裝置之光路設計微型投影系統,而可以從微型投影系統之需求去尋找最適合的搭配組合。For different micro-projection systems and their internal optical path design, the light-emitting diode device of the present invention has a single crystal, two crystal, three crystal and four crystal package forms respectively, and can be designed into three or two for the optical path design. An optical path, for the design and manufacture of micro-projection systems, the design scheme and material selection are more diverse, and there is no need to cooperate with the light path design micro-projection system of the light-emitting diode device, and the most suitable matching can be found from the needs of the micro-projection system. combination.

再者,發光二極體晶片之顏色及發光二極體裝置之封裝可隨需求而進行搭配,熟知本發明技術領域者可以輕易推及多種搭配方式,故發光二極體晶片之排列方式及顏色並不侷限上述提供之實施例及態樣,例如可為單晶+二晶、三個單晶等,藉以配合微型投影系統之光源需求。而每一發光二極體裝置之封裝內晶片搭配或排列均隨需求選擇,搭配彈性高。Furthermore, the color of the LED chip and the package of the LED device can be matched with the requirements. It is well known that those skilled in the art can easily push various combinations, so the arrangement and color of the LED chip are easily The embodiments and aspects provided above are not limited, and may be, for example, single crystal + two crystal, three single crystals, etc., in order to meet the light source requirements of the micro projection system. The matching or arrangement of the wafers in the package of each LED device is selected according to requirements, and the matching elasticity is high.

本發明之發光二極體裝置之封裝無須填膠,而是直接覆蓋一片抗光折射玻璃,藉以有效減少光的折射,使發光二極體裝置成為一點光源而不是一面光源,維持原有的聚光效果;故可在量產時 減少許多的成本及工時;此外,如果改為覆蓋透鏡,亦可同樣採用內部不填膠的封裝方式,以確保高可靠度。The package of the light-emitting diode device of the invention does not need to be filled, but directly covers a piece of anti-light-refracting glass, thereby effectively reducing the refraction of light, so that the light-emitting diode device becomes a light source instead of a light source, maintaining the original poly Light effect; therefore, in mass production A lot of cost and man-hours are reduced; in addition, if the lens is replaced, the internal unfilled package can also be used to ensure high reliability.

承上段所述,本發明之發光二極體裝置具有多種封裝形式。因應現今微型投影系統尺寸上的要求,直接將二次光學的部份設計於封裝上,使發光二極體裝置除了是光源亦可直接進行光學設計。是故可搭配不同角度及形狀的透鏡,封裝方式極具彈性,不同於過去發光二極體裝置隨客需封裝而彈性較小,此對於微型投影系統之光學設計及製程上均能減少一道工夫。As described in the above paragraph, the light-emitting diode device of the present invention has various package forms. In view of the size requirements of today's miniature projection systems, the secondary optics are directly designed on the package, so that the LED device can be directly optically designed in addition to the light source. Therefore, it can be matched with lenses of different angles and shapes, and the packaging method is very flexible, which is different from the flexibility of the conventional LED device in the package, which can reduce the effort on the optical design and process of the micro-projection system. .

上述之實施例僅用以例舉本發明之實施態樣、及闡釋本發明之技術特徵,並非用來限制本發明之範疇。任何熟悉此技術者可輕易完成之改變或均等性之安排均屬於本發明所主張之範圍,本發明之權利範圍應以申請專利範圍為準。The embodiments described above are only intended to illustrate the embodiments of the present invention, and to explain the technical features of the present invention, and are not intended to limit the scope of the present invention. Any changes or equivalents that can be easily made by those skilled in the art are within the scope of the invention, and the scope of the invention should be determined by the scope of the claims.

1‧‧‧發光二極體裝置1‧‧‧Lighting diode device

1’‧‧‧發光二極體裝置1'‧‧‧Lighting diode device

101‧‧‧底部基板101‧‧‧Bottom substrate

103‧‧‧陽極部103‧‧‧Anode

105‧‧‧陰極部105‧‧‧Cathode

107‧‧‧發光二極體晶片107‧‧‧Light Emitting Diode Wafer

109‧‧‧環繞基板109‧‧‧ surrounding substrate

109a‧‧‧環繞部109a‧‧‧ Surrounding

109b‧‧‧中空部109b‧‧‧ Hollow

111‧‧‧透光元件111‧‧‧Lighting element

113‧‧‧齊納二極體113‧‧‧Zina diode

2‧‧‧發光二極體裝置2‧‧‧Lighting diode device

201‧‧‧陽極部201‧‧‧Anode

203‧‧‧陰極部203‧‧‧ Cathode

3‧‧‧發光二極體裝置3‧‧‧Lighting diode device

3’‧‧‧發光二極體裝置3'‧‧‧Lighting diode device

301‧‧‧底部基板301‧‧‧Bottom substrate

303‧‧‧陽極部303‧‧‧Anode

305‧‧‧陰極部305‧‧‧ Cathode

307‧‧‧發光二極體晶片307‧‧‧Light Emitter Wafer

309‧‧‧環繞基板309‧‧‧ surrounding substrate

311‧‧‧透光元件311‧‧‧Lighting components

313‧‧‧齊納二極體313‧‧‧Zina diode

4‧‧‧發光二極體裝置4‧‧‧Lighting diode device

4’‧‧‧發光二極體裝置4'‧‧‧Lighting diode device

403‧‧‧陽極部403‧‧‧Anode

405‧‧‧陰極部405‧‧‧ Cathode

413‧‧‧齊納二極體413‧‧‧Zina diode

5‧‧‧發光二極體裝置5‧‧‧Lighting diode device

6‧‧‧發光二極體裝置6‧‧‧Lighting diode device

6’‧‧‧發光二極體裝置6'‧‧‧Lighting diode device

601‧‧‧底部基板601‧‧‧ bottom substrate

603‧‧‧陽極部603‧‧‧Anode

605‧‧‧陰極部605‧‧‧Cathode

607‧‧‧發光二極體晶片607‧‧‧Light Emitter Wafer

609‧‧‧環繞基板609‧‧‧round substrate

611‧‧‧透光元件611‧‧‧Lighting components

613‧‧‧齊納二極體613‧‧ ‧ Zener diode

7‧‧‧發光二極體裝置7‧‧‧Lighting diode device

7’‧‧‧發光二極體裝置7'‧‧‧Lighting diode device

703‧‧‧陽極部703‧‧‧Anode

705‧‧‧陰極部705‧‧‧ Cathode

713‧‧‧齊納二極體713‧‧‧Zina diode

8‧‧‧發光二極體裝置8‧‧‧Lighting diode device

8’‧‧‧發光二極體裝置8'‧‧‧Lighting diode device

801‧‧‧底部基板801‧‧‧Bottom substrate

803‧‧‧陽極部803‧‧‧Anode

805‧‧‧陰極部805‧‧‧Cathode

807‧‧‧發光二極體晶片807‧‧‧Light Emitter Wafer

809‧‧‧環繞基板809‧‧‧ surrounding substrate

811‧‧‧透光元件811‧‧‧Lighting components

813‧‧‧齊納二極體813‧‧‧Zina diode

9‧‧‧發光二極體裝置9‧‧‧Lighting diode device

10a‧‧‧發光二極體裝置10a‧‧‧Lighting diode device

10b‧‧‧發光二極體裝置10b‧‧‧Lighting diode device

11a‧‧‧發光二極體裝置11a‧‧‧Lighting diode device

11b‧‧‧發光二極體裝置11b‧‧‧Lighting diode device

第1A圖係本發明第一實施例之發光二極體裝置上視圖;第1B圖係本發明第一實施例之發光二極體裝置立體圖;第1C圖係本發明第一實施例之發光二極體裝置剖面圖;第1D圖係本發明第一實施例之發光二極體裝置另一實施態樣之上視圖;第2圖係本發明第二實施例之發光二極體裝置上視圖;第3A圖係本發明第三實施例之發光二極體裝置上視圖;第3B圖係本發明第三實施例之發光二極體裝置立體圖;第3C圖係本發明第三實施例之發光二極體裝置剖面圖;第3D圖係本發明第三實施例之發光二極體裝置另一實施態樣 之上視圖;第4A圖係本發明第四實施例之發光二極體裝置上視圖;第4B圖係本發明第四實施例之發光二極體裝置另一實施態樣之上視圖;第5圖係本發明第五實施例之發光二極體裝置上視圖;第6A圖係本發明第六實施例之發光二極體裝置上視圖;第6B圖係本發明第六實施例之發光二極體裝置立體圖;第6C圖係本發明第六實施例之發光二極體裝置剖面圖;第6D圖係本發明第六實施例之發光二極體裝置另一實施態樣之上視圖;第7A圖係本發明第七實施例之發光二極體裝置上視圖;第7B圖係本發明第七實施例之發光二極體裝置另一實施態樣之上視圖;第8A圖係本發明第八實施例之發光二極體裝置上視圖;第8B圖係本發明第八實施例之發光二極體裝置立體圖;第8C圖係本發明第八實施例之發光二極體裝置剖面圖;第8D圖係本發明第八實施例之發光二極體裝置另一實施態樣之上視圖;第9圖係本發明第九實施例之發光二極體裝置上視圖;第10A圖係本發明發光二極體裝置之一應用態樣之剖面圖;第10B圖係本發明發光二極體裝置之另一應用態樣之剖面圖;第11A圖係本發明發光二極體裝置之又一應用態樣之剖面圖;以及第11B圖係本發明發光二極體裝置之再一應用態樣之剖面圖。1A is a top view of a light emitting diode device according to a first embodiment of the present invention; FIG. 1B is a perspective view of a light emitting diode device according to a first embodiment of the present invention; and FIG. 1C is a light emitting device according to a first embodiment of the present invention; 1D is a top view of another embodiment of a light-emitting diode device according to a first embodiment of the present invention; and FIG. 2 is a top view of a light-emitting diode device according to a second embodiment of the present invention; 3A is a top view of a light-emitting diode device according to a third embodiment of the present invention; FIG. 3B is a perspective view of a light-emitting diode device according to a third embodiment of the present invention; and FIG. 3C is a light-emitting diode according to a third embodiment of the present invention; A cross-sectional view of a polar device; a third embodiment is another embodiment of a light-emitting diode device according to a third embodiment of the present invention 4A is a top view of a light-emitting diode device according to a fourth embodiment of the present invention; FIG. 4B is a top view of another embodiment of the light-emitting diode device according to the fourth embodiment of the present invention; Figure 6 is a top view of a light-emitting diode device according to a fifth embodiment of the present invention; Figure 6A is a top view of a light-emitting diode device according to a sixth embodiment of the present invention; and Figure 6B is a light-emitting diode of a sixth embodiment of the present invention; FIG. 6C is a cross-sectional view of a light-emitting diode device according to a sixth embodiment of the present invention; FIG. 6D is a top view of another embodiment of the light-emitting diode device of the sixth embodiment of the present invention; Figure 7 is a top view of a light-emitting diode device according to a seventh embodiment of the present invention; Figure 7B is a top view of another embodiment of the light-emitting diode device of the seventh embodiment of the present invention; FIG. 8B is a perspective view of a light-emitting diode device according to an eighth embodiment of the present invention; FIG. 8C is a cross-sectional view of a light-emitting diode device according to an eighth embodiment of the present invention; Figure 1 is another embodiment of the light-emitting diode device of the eighth embodiment of the present invention FIG. 9 is a top view of a light-emitting diode device according to a ninth embodiment of the present invention; FIG. 10A is a cross-sectional view showing an application aspect of the light-emitting diode device of the present invention; FIG. 10B is a view A cross-sectional view showing another application aspect of the light-emitting diode device; FIG. 11A is a cross-sectional view showing another application aspect of the light-emitting diode device of the present invention; and FIG. 11B is a light-emitting diode device of the present invention. Another cross-sectional view of the application.

1‧‧‧發光二極體裝置1‧‧‧Lighting diode device

101‧‧‧底部基板101‧‧‧Bottom substrate

103‧‧‧陽極部103‧‧‧Anode

105‧‧‧陰極部105‧‧‧Cathode

107‧‧‧發光二極體晶片107‧‧‧Light Emitting Diode Wafer

109‧‧‧環繞基板109‧‧‧ surrounding substrate

109a‧‧‧環繞部109a‧‧‧ Surrounding

109b‧‧‧中空部109b‧‧‧ Hollow

111‧‧‧透光元件111‧‧‧Lighting components

Claims (15)

一種用於一微型投影系統之發光二極體裝置,包含:一底部基板;一陽極部,設置於該底部基板上;至少一陰極部,設置於該底部基板上;複數個發光二極體(light emitting diode,LED)晶片,設置於該陽極部上,該等LED晶片共同與該陽極部電性連接,且該等LED晶片與該至少一陰極部電性連接,該等LED晶片的間距小於0.07mm;一透光元件,覆蓋於該底部基板上,以界定一空腔;以及一環繞基板,具有一環繞部及一中空部,該透光元件係直接覆蓋於該環繞基板上,以該中空部界定出該空腔,而該空腔為無填膠者。 A light emitting diode device for a micro projection system, comprising: a bottom substrate; an anode portion disposed on the bottom substrate; at least one cathode portion disposed on the bottom substrate; and a plurality of light emitting diodes ( a light emitting diode (LED) chip is disposed on the anode portion, the LED chips are electrically connected to the anode portion, and the LED chips are electrically connected to the at least one cathode portion, and the distance between the LED chips is less than a transparent component covering the bottom substrate to define a cavity; and a surrounding substrate having a surrounding portion and a hollow portion, the transparent component directly covering the surrounding substrate, the hollow The cavity defines the cavity, and the cavity is a non-filler. 如請求項1所述之發光二極體裝置,其中該透光元件係為一玻璃或一透鏡。 The light-emitting diode device of claim 1, wherein the light-transmitting element is a glass or a lens. 如請求項2所述之發光二極體裝置,其中該玻璃係為一抗光折射玻璃。 The light-emitting diode device of claim 2, wherein the glass is a light-resistant refractive glass. 如請求項1所述之發光二極體裝置,更包含至少一齊納二極體(Zener diode)。 The illuminating diode device of claim 1, further comprising at least one Zener diode. 如請求項1所述之發光二極體裝置,其中該底部基板係為一氮化鋁(AlN)基板。 The light emitting diode device of claim 1, wherein the bottom substrate is an aluminum nitride (AlN) substrate. 如請求項1所述之發光二極體裝置,其中該環繞基板係為一低溫共燒陶瓷基板(LTCC,Low Temperature Co-fired Ceramic)。 The illuminating diode device of claim 1, wherein the surrounding substrate is a low temperature co-fired ceramic substrate (LTCC, Low Temperature Co-fired). Ceramic). 一種用於一微型投影系統之發光二極體裝置,包含:一底部基板;一陽極部,設置於該底部基板上;複數個陰極部,設置於該底部基板上;複數個發光二極體(light emitting diode,LED)晶片,設置於該陽極部上,該等LED晶片共同與該陽極部電性連接,且各該LED晶片係分別與各該陰極部電性連接,該等LED晶片之數量與該等陰極部之數量相同;一透光元件,覆蓋於該底部基板上,以界定一空腔;以及一環繞基板,具有一環繞部及一中空部,該透光元件係直接覆蓋於該環繞基板上,以該中空部界定出該空腔。 A light emitting diode device for a micro projection system, comprising: a bottom substrate; an anode portion disposed on the bottom substrate; a plurality of cathode portions disposed on the bottom substrate; and a plurality of light emitting diodes ( a light emitting diode (LED) chip is disposed on the anode portion, the LED chips are electrically connected to the anode portion, and each of the LED chips is electrically connected to each of the cathode portions, and the number of the LED chips is The same as the number of the cathode portions; a light transmissive member covering the base substrate to define a cavity; and a surrounding substrate having a surrounding portion and a hollow portion, the light transmitting member directly covering the surrounding The cavity is defined by the hollow portion on the substrate. 如請求項7所述之發光二極體裝置,其中該等LED晶片係為垂直式晶片或水平式晶片。 The illuminating diode device of claim 7, wherein the LED chips are vertical wafers or horizontal wafers. 如請求項7所述之發光二極體裝置,其中該等LED晶片係為一紅光LED晶片、一綠光LED晶片及一藍光LED晶片其中之一。 The illuminating diode device of claim 7, wherein the LED chips are one of a red LED chip, a green LED chip, and a blue LED chip. 如請求項7所述之發光二極體裝置,其中該等LED晶片之數量為二個,且該等陰極部之數量為二個,分別與該二個LED晶片電性連接。 The illuminating diode device of claim 7, wherein the number of the LED chips is two, and the number of the cathode portions is two, and is electrically connected to the two LED chips respectively. 如請求項10所述之發光二極體裝置,其中該二個LED晶片係為一紅光LED晶片及一綠光LED晶片、一紅光LED晶片及一藍光LED晶片,或一綠光LED晶片及一藍光LED晶片。 The illuminating diode device of claim 10, wherein the two LED chips are a red LED chip and a green LED chip, a red LED chip and a blue LED chip, or a green LED chip. And a blue LED chip. 如請求項7所述之發光二極體裝置,其中該等LED晶片之數量為三個,且該等陰極部之數量為三個,分別與該三個LED晶片電性連接。 The illuminating diode device of claim 7, wherein the number of the LED chips is three, and the number of the cathode portions is three, and is electrically connected to the three LED chips respectively. 如請求項12所述之發光二極體裝置,其中該三個LED晶片係為一紅光LED晶片、一綠光LED晶片及一藍光LED晶片。 The illuminating diode device of claim 12, wherein the three LED chips are a red LED chip, a green LED chip, and a blue LED chip. 如請求項7所述之發光二極體裝置,其中該等LED晶片之數量為四個,且該等陰極部之數量為四個,分別與該四個LED晶片電性連接。 The illuminating diode device of claim 7, wherein the number of the LED chips is four, and the number of the cathode portions is four, and is electrically connected to the four LED chips. 如請求項14所述之發光二極體裝置,其中該四個LED晶片係為一紅光LED晶片、二綠光LED晶片及一藍光LED晶片。 The illuminating diode device of claim 14, wherein the four LED chips are a red LED chip, a two green LED chip, and a blue LED chip.
TW099131613A 2010-09-17 2010-09-17 Light emitting diode device for a pico projection system TWI487145B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW099131613A TWI487145B (en) 2010-09-17 2010-09-17 Light emitting diode device for a pico projection system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW099131613A TWI487145B (en) 2010-09-17 2010-09-17 Light emitting diode device for a pico projection system

Publications (2)

Publication Number Publication Date
TW201214782A TW201214782A (en) 2012-04-01
TWI487145B true TWI487145B (en) 2015-06-01

Family

ID=46786564

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099131613A TWI487145B (en) 2010-09-17 2010-09-17 Light emitting diode device for a pico projection system

Country Status (1)

Country Link
TW (1) TWI487145B (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200407954A (en) * 2001-11-07 2004-05-16 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP0779661B1 (en) * 1995-12-13 2007-07-18 Oki Data Corporation High-resolution light-emitting diode array and fabrication method thereof
TW200816525A (en) * 2006-08-08 2008-04-01 Lg Electronics Inc Light emitting device package and method for manufacturing the same
TW201019511A (en) * 2008-09-09 2010-05-16 Nichia Corp Optical-semiconductor device and method for manufacturing the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0779661B1 (en) * 1995-12-13 2007-07-18 Oki Data Corporation High-resolution light-emitting diode array and fabrication method thereof
TW200407954A (en) * 2001-11-07 2004-05-16 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TW200816525A (en) * 2006-08-08 2008-04-01 Lg Electronics Inc Light emitting device package and method for manufacturing the same
TW201019511A (en) * 2008-09-09 2010-05-16 Nichia Corp Optical-semiconductor device and method for manufacturing the same

Also Published As

Publication number Publication date
TW201214782A (en) 2012-04-01

Similar Documents

Publication Publication Date Title
JP6339161B2 (en) Light emitting device package
TWI725121B (en) Optical lens and light emitting module including the same
TWI711787B (en) Optical lens and light emitting module having the same
TWI527988B (en) Light emitting device and light unit using the same
JP5797393B2 (en) Light emitting device package
TWI604163B (en) Light emitting device and light unit using the same
JP2018045972A (en) Light emitting device
US20150049486A1 (en) Led illumination module
US9857049B2 (en) LED illumination device
TW201145597A (en) Light emitting device package
US20110089449A1 (en) Light emitting diode package structure
US10009527B2 (en) Compact LED lighting unit for use in camera or video flash applications
TW202401855A (en) Light source
JP2009049239A (en) Led light-emitting device
WO2011060618A1 (en) Method and structure for encapsulating solid-state lighting chip and light sources using the encapsulating structure
JP2019024071A (en) Light-emitting device, integrated light-emitting device and light-emitting module
US20130043493A1 (en) Light-emitting diode structure
US20120168798A1 (en) Led package
US8740398B2 (en) Camera flash module
KR20140095913A (en) Light emitting module and light apparatus having thereof
TWI487145B (en) Light emitting diode device for a pico projection system
CN111029335A (en) Deep ultraviolet light-emitting device
US8378365B2 (en) Light emitting diode package and projection apparatus
CN102412359B (en) Light-emitting diode assembly for a micro projection system
TWI390764B (en) Light emitting diode

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees