TWI485758B - - Google Patents
Info
- Publication number
- TWI485758B TWI485758B TW100149983A TW100149983A TWI485758B TW I485758 B TWI485758 B TW I485758B TW 100149983 A TW100149983 A TW 100149983A TW 100149983 A TW100149983 A TW 100149983A TW I485758 B TWI485758 B TW I485758B
- Authority
- TW
- Taiwan
Links
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110287515.0A CN102332383B (zh) | 2011-09-23 | 2011-09-23 | 等离子体刻蚀工艺的终点监控方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201314753A TW201314753A (zh) | 2013-04-01 |
| TWI485758B true TWI485758B (ja) | 2015-05-21 |
Family
ID=45484112
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100149983A TW201314753A (zh) | 2011-09-23 | 2011-12-30 | 等離子體刻蝕工藝的終點監控方法 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102332383B (ja) |
| TW (1) | TW201314753A (ja) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103839851A (zh) * | 2014-03-17 | 2014-06-04 | 上海华虹宏力半导体制造有限公司 | 终点判断方法 |
| CN105405735B (zh) * | 2014-08-22 | 2017-07-25 | 中微半导体设备(上海)有限公司 | 等离子体处理装置及等离子体处理工艺的监测方法 |
| CN107546094B (zh) * | 2016-06-28 | 2019-05-03 | 中微半导体设备(上海)股份有限公司 | 监测等离子体工艺制程的等离子体处理装置和方法 |
| CN107910281A (zh) * | 2017-11-20 | 2018-04-13 | 上海华力微电子有限公司 | 一种实时监控刻蚀均匀性的方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004253813A (ja) * | 1996-11-11 | 2004-09-09 | Tokyo Electron Ltd | プラズマ処理の終点検出方法およびその装置 |
| US20090029489A1 (en) * | 2007-07-24 | 2009-01-29 | Dms. Co. Ltd. | Endpoint Detection Device For Realizing Real-Time Control Of Plasma Reactor, Plasma Reactor With Endpoint Detection Device, And Endpoint Detection Method |
| TW201112302A (en) * | 2009-06-30 | 2011-04-01 | Lam Res Corp | Methods for constructing an optimal endpoint algorithm |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6599759B2 (en) * | 2001-05-02 | 2003-07-29 | Taiwan Semiconductor Manufacturing Co., Ltd | Method for detecting end point in plasma etching by impedance change |
| TW560080B (en) * | 2002-09-12 | 2003-11-01 | Winbond Electronics Corp | A method for detecting the end point of plasma etching process by using matrix |
-
2011
- 2011-09-23 CN CN201110287515.0A patent/CN102332383B/zh active Active
- 2011-12-30 TW TW100149983A patent/TW201314753A/zh unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004253813A (ja) * | 1996-11-11 | 2004-09-09 | Tokyo Electron Ltd | プラズマ処理の終点検出方法およびその装置 |
| US20090029489A1 (en) * | 2007-07-24 | 2009-01-29 | Dms. Co. Ltd. | Endpoint Detection Device For Realizing Real-Time Control Of Plasma Reactor, Plasma Reactor With Endpoint Detection Device, And Endpoint Detection Method |
| TW201112302A (en) * | 2009-06-30 | 2011-04-01 | Lam Res Corp | Methods for constructing an optimal endpoint algorithm |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102332383A (zh) | 2012-01-25 |
| TW201314753A (zh) | 2013-04-01 |
| CN102332383B (zh) | 2014-12-10 |