TWI484528B - - Google Patents

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Publication number
TWI484528B
TWI484528B TW101151268A TW101151268A TWI484528B TW I484528 B TWI484528 B TW I484528B TW 101151268 A TW101151268 A TW 101151268A TW 101151268 A TW101151268 A TW 101151268A TW I484528 B TWI484528 B TW I484528B
Authority
TW
Taiwan
Application number
TW101151268A
Other languages
Chinese (zh)
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TW201351469A (en
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Filing date
Publication date
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Publication of TW201351469A publication Critical patent/TW201351469A/en
Application granted granted Critical
Publication of TWI484528B publication Critical patent/TWI484528B/zh

Links

TW101151268A 2012-03-23 2012-12-28 Capacitive coupling plasma reactor and control method thereof TW201351469A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2012100812363A CN103327723A (en) 2012-03-23 2012-03-23 Capacity coupling plasma reactor and control method thereof

Publications (2)

Publication Number Publication Date
TW201351469A TW201351469A (en) 2013-12-16
TWI484528B true TWI484528B (en) 2015-05-11

Family

ID=49196165

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101151268A TW201351469A (en) 2012-03-23 2012-12-28 Capacitive coupling plasma reactor and control method thereof

Country Status (2)

Country Link
CN (1) CN103327723A (en)
TW (1) TW201351469A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI728516B (en) * 2018-10-18 2021-05-21 北京北方華創微電子裝備有限公司 Method for controlling radio frequency source

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7018288B2 (en) * 2017-10-10 2022-02-10 東京エレクトロン株式会社 Film formation method

Citations (6)

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Publication number Priority date Publication date Assignee Title
TW200839829A (en) * 2007-03-21 2008-10-01 Advanced Micro Fab Equip Inc Capacitance-coupled plasma chamber, structure and manufacturing method of gas distribution head, refurbishment and reuse method thereof
US20090284156A1 (en) * 2008-05-14 2009-11-19 Applied Materials, Inc. Method and apparatus for pulsed plasma processing using a time resolved tuning scheme for rf power delivery
US20100319851A1 (en) * 2005-10-20 2010-12-23 Buchberger Jr Douglas A Plasma reactor with feed forward thermal control system using a thermal model for accommodating rf power changes or wafer temperature changes
CN101736326B (en) * 2008-11-26 2011-08-10 中微半导体设备(上海)有限公司 Capacitively coupled plasma processing reactor
TW201130031A (en) * 2009-10-26 2011-09-01 Applied Materials Inc Dual mode inductively coupled plasma reactor with adjustable phase coil assembly
US20110217806A1 (en) * 2008-10-01 2011-09-08 Oerlikon Solar Ag, Truebbach Radiofrequency plasma reactor and method for manufacturing vacuum process treated substrates

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JP3832934B2 (en) * 1997-07-18 2006-10-11 株式会社アルバック Reactive ion etching system
TW507256B (en) * 2000-03-13 2002-10-21 Mitsubishi Heavy Ind Ltd Discharge plasma generating method, discharge plasma generating apparatus, semiconductor device fabrication method, and semiconductor device fabrication apparatus
JP3751909B2 (en) * 2002-07-01 2006-03-08 独立行政法人科学技術振興機構 Plasma apparatus and plasma processing substrate
JP3776856B2 (en) * 2002-09-13 2006-05-17 株式会社日立ハイテクノロジーズ Plasma processing apparatus and plasma processing method
FR2895169B1 (en) * 2005-12-15 2008-08-01 Renault Sas OPTIMIZING THE EXCITATION FREQUENCY OF A RESONATOR
KR20080111801A (en) * 2007-06-20 2008-12-24 삼성전자주식회사 Plasma processing apparatus and method thereof
JP5496568B2 (en) * 2009-08-04 2014-05-21 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
CN101789362B (en) * 2010-02-05 2011-10-05 中微半导体设备(上海)有限公司 Plasma processing device and processing method thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100319851A1 (en) * 2005-10-20 2010-12-23 Buchberger Jr Douglas A Plasma reactor with feed forward thermal control system using a thermal model for accommodating rf power changes or wafer temperature changes
TW200839829A (en) * 2007-03-21 2008-10-01 Advanced Micro Fab Equip Inc Capacitance-coupled plasma chamber, structure and manufacturing method of gas distribution head, refurbishment and reuse method thereof
US20090284156A1 (en) * 2008-05-14 2009-11-19 Applied Materials, Inc. Method and apparatus for pulsed plasma processing using a time resolved tuning scheme for rf power delivery
US20110217806A1 (en) * 2008-10-01 2011-09-08 Oerlikon Solar Ag, Truebbach Radiofrequency plasma reactor and method for manufacturing vacuum process treated substrates
CN101736326B (en) * 2008-11-26 2011-08-10 中微半导体设备(上海)有限公司 Capacitively coupled plasma processing reactor
TW201130031A (en) * 2009-10-26 2011-09-01 Applied Materials Inc Dual mode inductively coupled plasma reactor with adjustable phase coil assembly

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI728516B (en) * 2018-10-18 2021-05-21 北京北方華創微電子裝備有限公司 Method for controlling radio frequency source

Also Published As

Publication number Publication date
TW201351469A (en) 2013-12-16
CN103327723A (en) 2013-09-25

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