TWI483339B - Wafer bonding device, wafer bonding method, wafer detection device and wafer detection method - Google Patents

Description

Wafer bonding device, wafer bonding method, wafer inspection device, and wafer inspection method

The present invention relates to a substrate detecting device, a substrate position determining device, a substrate bonding device having a substrate detecting device and a substrate position determining device, a wafer shape detecting device, a wafer position determining device, and a substrate position determining device used in the field of electronic device manufacturing. A wafer bonding apparatus having a wafer shape detecting device and a wafer position determining device.

As one of the powerful means for achieving an increase in the operation speed of the electronic device, a function of heightening, a large capacity, and the like, a three-dimensional layer of a wafer on which an electronic device is formed is exemplified. In this way, by connecting a wire having a lead wire penetrating through the inside of the semiconductor substrate (wafer), the wire can be connected and thinned, and the off-line length of the circuit can be shortened, and the device can be speeded up and the heat can be reduced. In addition, by increasing the number of layers of the wafer stack, the circuit function can be improved and the memory capacity can be increased.

In order to perform three-dimensional lamination of a wafer, it is proposed to form a bonding electrode on the surface of the formed circuit, and the position is determined to be two wafers or a laminated wafer and the electrodes of the further stacked one wafer are aligned with each other. A wafer bonding apparatus (for example, Japanese Patent Laid-Open Publication No. 2005-302858).

In the conventional wafer bonding apparatus, in order to detect the shape of the wafer, a wafer shape detecting device that detects light from the wafer and detects the shape of the wafer by a photodetector disposed under the wafer is used.

However, in the conventional wafer outline device, when the shape of a laminated wafer (hereinafter also referred to as a wafer) in which a plurality of wafers are stacked is detected, the maximum shape of the entire wafer is detected, and the corresponding shape cannot be detected correctly. The problem of the wafer shape of the mating surface.

Therefore, the present invention has been made in view of the above problems, and an object thereof is to provide a substrate detecting device, a substrate position determining device, a substrate bonding device having a substrate detecting device and a substrate position determining device, a wafer shape detecting device, and a wafer. A position determining device and a wafer bonding device having a wafer shape detecting device and a wafer position determining device.

In order to solve the above-described problems, a first aspect of the present invention provides a substrate detecting apparatus including a detecting unit for detecting an uppermost layer of an uppermost layer among a plurality of substrates which are stacked.

Further, according to a first aspect of the present invention, the detecting unit detects an edge detecting device for detecting an edge of the uppermost substrate, and further includes: a rotating device that rotates the plurality of substrates stacked; and the edge detecting device traces a servo device for displacing the edge of the uppermost substrate of the rotating device, and a position detecting device for detecting a position of the edge detecting device.

Further, according to a first aspect of the present invention, the edge detecting means is configured to detect a step difference of the edge of the uppermost substrate.

Further, according to the first aspect of the present invention, the edge detecting means is for detecting the inclination of the uppermost substrate.

Further, according to a first aspect of the present invention, the edge detecting device is configured to detect a change in optical characteristics of the edge of the uppermost substrate.

Further, according to a first aspect of the present invention, the optical characteristic includes at least one of a color and a reflectance of the uppermost substrate.

Further, according to a second aspect of the present invention, a substrate position determining device includes: the substrate detecting device; a substrate holding stage for determining a substrate holder holding the substrate; and the substrate Transfer to the transfer means of the substrate holder.

According to a third aspect of the present invention, there is provided a substrate bonding apparatus comprising: the substrate position determining device; and the two substrates that are determined by the position of the substrate position determining device through the substrate holder The substrate bonding portion to which the substrate is bonded.

Moreover, according to a fourth aspect of the present invention, a wafer shape detecting device is provided, comprising: a rotating device for rotating a wafer; and detecting an edge of the wafer placed on the rotating device An edge detecting device; a servo device for causing the edge detecting device to track the displacement of the wafer edge; and a position detecting device for detecting a position of the edge detecting device in a radial direction of the wafer.

Further, according to a fourth aspect of the present invention, the edge detecting means is for detecting a step difference of the edge of the wafer.

Further, according to a fourth aspect of the present invention, the edge detecting means is for detecting a tilt of the edge of the wafer.

Further, according to a fourth aspect of the present invention, the edge detecting means is for detecting a change in optical characteristics of the edge of the wafer.

Further, according to a fourth aspect of the present invention, the optical characteristic includes at least one of a color and a reflectance of the edge of the wafer.

Moreover, according to a fourth aspect of the present invention, a fixed edge detecting device for detecting the edge of the wafer is disposed in the vicinity of the outer peripheral portion of the wafer.

Further, according to the fourth aspect of the present invention, according to the aforementioned edge detection A signal of at least one of the device and the fixed edge detecting device detects a groove position formed by the outer peripheral portion of the wafer.

Further, according to a fourth aspect of the present invention, the edge detecting means detects the number of layers of the wafer, and when the wafer is a laminated wafer, the edge detecting means detects the groove position.

Further, according to a fourth aspect of the present invention, the edge detecting means detects the number of layers of the wafer, and when the wafer is a single layer wafer, the groove position is detected by the fixed edge detecting means.

Further, according to the fourth aspect of the present invention, when the number of layers of the wafer to be detected is different from the wafer layer information at the time of wafer loading, an error display is performed.

Moreover, according to the fourth aspect of the present invention, either one of the edge detecting device or the fixed edge detecting device is selected based on the wafer stacking information at the time of wafer loading.

Further, according to a fifth aspect of the present invention, a wafer position determining apparatus includes: the wafer shape detecting device; and a wafer holding stage for determining a wafer holder for holding a wafer. Transferring the wafer to the transfer means of the wafer holder.

Further, according to the fifth aspect of the present invention, the aforementioned position relative to the predetermined position of the wafer holder is performed based on the detection result of the eccentric amount, the groove position or the orientation plane position of the wafer using the wafer shape detecting device The eccentricity of the wafer, the correction of the groove position or the orientation plane position, and the wafer position are determined by the wafer holder.

Moreover, according to the sixth aspect of the present invention, a wafer sticker is provided The apparatus includes: the wafer position determining device; and a wafer bonding unit that bonds the two wafers determined by the position of the wafer position determining device through the wafer holder.

According to the present invention, there is provided a substrate detecting device, a substrate position determining device, and a substrate bonding device including a substrate detecting device and a substrate position determining device which can accurately measure the outer shape of the bonding surface of the uppermost substrate of the corresponding substrate.

Further, a wafer shape detecting device, a wafer position determining device, and a wafer bonding device having a wafer shape detecting device and a wafer position determining device capable of accurately measuring the outer shape of the bonding surface of the uppermost wafer are provided. .

Further, according to the above apparatus, it is possible to measure the offset amount of the substrate or the wafer at the time of bonding, and to optimize the bonding conditions.

Hereinafter, a wafer bonding apparatus according to an embodiment of the present invention will be described in detail.

In the following embodiments, a semiconductor wafer is used as a representative. However, various substrates such as a glass substrate, a ceramic substrate, and a ferrite substrate other than the semiconductor wafer used in the electronic device manufacturing may be used.

In addition, it can also be used for a wafer on which an electronic device is formed.

The first figure is a schematic configuration diagram of a wafer bonding apparatus of an embodiment.

The wafer bonding apparatus 1 of the embodiment is a wafer position determining device 50 that incorporates a wafer shape detecting device 10 to be described later, and two wafers that are determined by the bonding position of the wafer holder to form a stacked wafer. The wafer bonding unit 90 is configured.

The wafer in the wafer shape detecting device 10 of the wafer position determining device 50 is completed in the previous step, and the wafer shape detecting device 10 detects the outer shape of the wafer corresponding to the uppermost bonding surface, the groove position of the wafer, Or orientation plane position.

Further, in the substrate other than the semiconductor wafer, a position corresponding to the groove position or the orientation plane may be formed.

Based on the detection result of the wafer shape detecting device 10, the position of the wafer position determining device or the position of the wafer position determining unit 50, which will be described later, is determined at a predetermined position of the wafer holder to be described later.

The wafer position determining device 50 determines the position of the wafer holder and the wafer holder fixed by the position of the wafer position determining device 50, and the transfer device 2 transports the wafer bonding unit 90 to the wafer bonding unit 90, and the two wafers are transferred through the wafer holder. The wafer bonding unit 90 is bonded to form a bonded wafer 11 (the single-wafer wafer or the laminated wafer is simply referred to as a wafer).

(First embodiment)

Next, the wafer shape detecting device 10 of the first embodiment will be described.

The second drawing is a schematic configuration diagram of the wafer shape detecting device 10 of the first embodiment. The third figure is a wafer shape inspection flow chart of the wafer shape detecting device 10. The fourth A picture, the fourth B picture, the fifth A picture, the fifth B picture, and the fifth C picture respectively show an example of the edge detection output of the wafer. Fig. 6 is a block diagram showing an edge tracking control of the edge detecting device in the wafer shape detecting device of the first embodiment.

In the second drawing, for example, the wafer 11 to which the two wafers 11a and 11b are bonded is placed on the turntable 13 fixed to the rotating shaft of the rotary motor 12 through a wafer loading machine 51 (refer to FIG. 10) which will be described later. . In addition, the wafers 11a and 11b have a case where a single-wafer wafer also has a stacked wafer.

The rotary motor 12 is provided with a rotation for detecting the rotation of the rotary motor 12. Rotary encoder 14 that rotates position (rotation angle). In the following description, the case where the (laminated) wafer 11 is placed on the turntable 13 will be described. However, the single-plate wafer 11 may of course be used.

An edge detecting sensor 15 for detecting an outer edge portion of the wafer 11 is disposed above the wafer 11; and the edge detecting sensor 15 is supported to cause the edge detecting sensor 15 to track the wafer 11 Edge servo mechanism 16. The servo mechanism 16 is constituted by a linear motor 18 incorporating a linear encoder 17, and moves the edge detecting sensor 15 in the radial direction of the wafer 11.

Further, the rotary motor 12, the edge detecting sensor 15, the linear motor 18, and the like are controlled, and the control device 20 including various control units to be described later for processing each signal is provided.

The components of the wafer shape detecting device 10 will be described below.

The edge detecting sensor 15 extracts the displacement of the wafer 11 in the thickness direction. As shown in FIGS. 4A and 4B, a sensor system capable of detecting the step of the edge portion of the wafer 11 is formed. Further, the edge detecting sensor 15 can also measure the thickness of the wafer 11 at the same time. When the wafer 11 is a laminated wafer, the number of layers can be detected by knowing the thickness of each layer in advance.

The fourth A diagram shows an enlarged view of the edge portion of the wafer 11, and the fourth B shows an example of signals from the edge detecting sensor 15 in the radial direction of the wafer.

Further, the edge detecting sensor 15 has a tilt detecting function for detecting a portion where the edge region of the wafer 11 is inclined, and as shown in FIGS. 5A to 5C, the region of the edge of the wafer 11 can be discriminated.

The fifth A diagram shows an enlarged view of the edge portion of the wafer 11, and the fifth B shows the edge detection sensor 15 from the radial direction of the wafer. An example of the signal and the fifth C-picture show an example in which a signal of an edge range is formed based on the signal of the fifth B-picture.

Further, the edge detecting sensor 15 can detect the change in the reflectance, and the edge of the specific layer can be discriminated when the reflectance is different near the edge of the wafer (for example, 11a, 11b) of each layer of the wafer 11.

In addition, the edge detection sensor 15 can detect the hue, and the edges of the particular layer can be discerned when the hue is different near the edges of the layers of the wafer 11.

Further, in the present embodiment, the linear band for edge tracking is the widest, and a non-contact optical displacement meter capable of extracting the displacement in the thickness direction is used.

The linear motor 18 is a mechanism that drives the edge detecting sensor 15 in the radial direction of the wafer 11, and has a movable portion and a fixed portion that generate electromagnetic driving force by using a three-phase coil and a magnet, and has an electromagnetic driving force and a movable portion. Relative to the construction of the fixed part drive. The edge detecting sensor 15 is fixed to the movable portion. In addition, the linear motor 18 is also equipped with a guiding mechanism, and the position determining decomposing ability also has a capability of several μm.

In addition, the resolution required for the edge detection of the wafer 11 is based on the sampled data, but since it is required to be about 10 μm, if a position of several μm is used to determine the driving type of the capability, a single-phase VCM drive or an electromagnetic driving force is used. The air pressure brake of the air pressure driving force can also be used. Further, it is preferable to guide a mechanism system in which the sliding impedance such as the tracking edge is small.

The linear encoder 17 is incorporated in the linear motor 18, and detects the position of the movable portion in the driving direction (wafer radial direction). The linear encoder 17 can determine the position by the pulse count, but when the linear motor 18 is initialized, the count is set by the origin sensor (not shown). Further, the change from the count value to the position in the wafer radial direction is performed by the data processing unit (CPU) 21 of the control device 20. Further, in the present embodiment, the built-in line The encoder 17 is, but the linear encoder 17 can also be a peripheral.

The wafer 11 is a single layer wafer, a laminated (bonded) wafer or the like. In the present embodiment, a 200 mm wafer is mainly laminated, but the present invention is not limited thereto.

The structure of the rotary motor 12 is a rotor and a stator which are not shown in the drawing, and the rotor can be rotated by electromagnetic force or the like with respect to the stator.

The rotary encoder 14 is incorporated in the rotary motor 12 (not shown), and detects the angle of rotation of the rotary motor 12 in accordance with the rotation angle of the rotary motor 12. The rotary encoder 14 is set by the origin sensor (not shown) when the rotary motor 12 is initialized, and is converted by the data processing unit (CPU) 21 from the count value to the motor rotation angle. Further, in the present embodiment, the rotary encoder 14 is built in, but may be an external device.

The turntable 13 is attached to the rotor of the rotary motor 12 and has a function of adsorbing the wafer 11. The adsorbed wafer 11 is formed to rotate together with the rotation of the rotary motor 12. Further, in the present embodiment, vacuum suction is applied to the turntable 13 by vacuum suction, and the vacuum introduction system is transferred and executed by a rotary joint (not shown). Further, electrostatic adsorption or the like may be used instead of vacuum adsorption.

The linear motor driver 22 in the control device 20 is used to drive the control driver of the linear motor 18. The transfer position command determines the position of the linear motor 18 at a predetermined position, and when the thrust command is transmitted, the movable arm can be driven by a predetermined thrust, and the linear motor can be set. Various parameters such as driving conditions, and the linear motor can be driven according to the parameters.

The rotary motor driver 23 is a control driver for driving the rotary motor 12, and can rotate the number of rotations when transmitting the rotation command. When the position command to the target rotation angle is commanded, the position can be determined to a predetermined rotation angle, and various parameters such as the driving condition of the rotary motor 12 can be set, and the rotary motor 12 can be driven in accordance with the parameter.

The servo control unit 24 is a circuit having a servo function for causing the edge detecting sensor 15 to track the edge of the wafer 11, and the functional configuration of the circuit will be described with reference to a block diagram of the sixth drawing.

The function of this circuit is the block B1, B2 in the block diagram, and the comparator of Et and Es. Further, the block B3 represents the current sensitivity characteristic (A/V) of the linear motor driver 22, the block B4 represents the thrust characteristic (N/A) of the linear motor 28, and the block B5 (the dotted line portion) represents the movement to be loaded on the movable The state of the wafer edge direction of the sub-edge detection sensor 15 is one block.

Block B5 is the mass of the movable part formed by the linear motor mover and the edge detecting sensor 15, the thrust is accelerated by the acceleration characteristic ((m/s ² )/N), and the time integral of the acceleration is represented by the integral element. Converted to speed (m/s), the time integral of the speed is converted to the change in position (m).

The edge detecting sensor 15 is as shown in the second figure, the fourth A picture, the fourth B picture, and the fifth A picture to the fifth C picture, when the edge of the wafer 11b is the inner side (the inner circumference side of the wafer) The surface of the wafer is measured, and when the edge of the wafer 11b is outside, the state of the surface of the lower wafer 11a or the state without the measurement surface is measured.

When the displacement extraction function of the thickness detecting direction of the edge detecting sensor 15 is used, the signal output Es as shown in FIG. 4B is obtained according to the radius of the wafer 11, and the critical value Et is relatively equivalent to the wafer 11 at this time. The value of the Es of the surface height of the uppermost wafer 11b is set to a lower value. Considering the comparison of Es and Et in the block diagram of the sixth figure, the block B1 is When the edge of the wafer 11b of the fourth A-picture has the edge detecting sensor 15 on the outer peripheral side of the wafer 11b, Et-Es=ε>0, and conversely, the edge of the opposite wafer 11b is on the wafer 11b. When the edge detecting sensor 15 is provided on the inner peripheral side, Et-Es = ε < 0. In B1 of the block diagram of the sixth figure, with respect to the polarity of ε, if ε is positive, a voltage of +E(V) is generated, and if ε is negative, a voltage of -E(V) is generated. +E(V) corresponds to the thrust polarity moving toward the inner peripheral side on the wafer radius of the edge detecting sensor 15, and -E(V) corresponds to the thrust polarity moving toward the outer peripheral side. For the stabilization of the feedback control action, the phase compensation is performed using the filter of block B2. With these circuit configurations, the edge of the wafer 11b can be automatically tracked. The edge detecting means maintains the tracking state of the edge, whereby the position of the edge detecting sensor 15 is read from the linear encoder 17 and the information of the edge position can be manipulated.

As shown in the second figure, the measurement data reading unit 25 has the output voltage of the edge detecting sensor 15, the rotary encoder 14, or the linear encoder 17 synchronized with time, or synchronized with the encoder count to read data. The function. The read data is passed to the data processing unit 21.

When the number of processing units (CPU) 21 is connected to the wafer shape detecting device 10, the calculation processing and storage of the measurement data are performed, or the edge tracking servo ON/OFF command is issued to the servo control unit, or an instruction is issued to each driver. Alternatively, the processing of the state of the driver or the like, or the determination of the state of the wafer to be input, and the processing command of the corresponding state are performed.

Next, referring to the third figure, the flow of the wafer shape inspection (measurement) will be described in each step. The wafer 11 is automatically transferred by a machine not shown in the drawing, or is manually loaded by a person to the turntable 13 of the rotary motor 12.

Step (S1): Wafer surface measurement

To set the threshold value Et, you must find the top of the wafer to be measured. The surface height of the layer wafer 11b (refer to the second figure). To measure the surface height of the uppermost layer, the position of the edge detecting sensor 15 must be determined on the inner peripheral side of the wafer 11b. Taking the case of a 200 mm wafer as an example, an edge is formed near R=100 mm with respect to the center of rotation of the turntable 13. However, since the edge detecting sensor 15 is offset when the wafer 11 is stowed on the turntable 13, it is necessary to consider the position of the offset to determine the position. The correct threshold setting is to obtain the height data of the wafer surface as close as possible to the edge. Therefore, the eccentricity of the wafer 11 on the turntable 13 is preferably 5 mm or less. Therefore, the edge detecting sensor 15 is preferably set from the center of the turntable 13 to a radius of R = 90 to 94 mm. Further, this value is changed in accordance with the size of the wafer 11 placed on the turntable 13.

Next, the wafer shape detecting device 10 rotates the turntable 13 to measure the surface shift of the wafer 11b corresponding to the wafer rotation angle. After the measurement is completed, the rotation of the turntable 13 is stopped. When the step difference of the edge is small, the critical value of the surface offset of the wafer 11 is also set, whereby the edge detecting sensor 15 can be tracked as the edge of the object without error. Therefore, the target critical value Et is a parameter depending on the surface height of the wafer 11 from the uppermost layer depending on the rotation angle having a certain amount of offset. The seventh figure is an example of the height variation of the surface of the wafer 11b.

The standard of the offset is one-and-a-half of the difference between the segments tracked. The control is controlled by converting the offset to an analog voltage or digital value. From the above, the target critical value Et(θ) corresponding to the wafer rotation angle θ is obtained (refer to the seventh figure), and stored. Further, the control device 20 registers the number of wafer layers in the control device 20 in advance, and when the measured wafer height is different from the registered value, the data processing unit 21 may perform an error determination.

Step (S2): edge servo ON to weight processing

The data processing unit 21 issues a servo ON command to the wafer 11 in the rotation stop state, and the servo control unit 24 becomes the edge tracking state (the state of the block diagram of the sixth drawing).

When the edge is stationary, the change of the edge detecting sensor 15 is as shown in the eighth figure. The eighth figure shows an example of the servo traction characteristics of the opposite edges. The actuation of the edge detection sensor 15 is represented by the output of the linear encoder 17, so that the state of excessive traction completion can be obtained by monitoring the output of the linear encoder 17.

The servo control unit 24 activates the rotary motor 12 at the stage of completion of servo traction, and rotates the wafer 11 at a predetermined number of revolutions. When there is an error in the tracking of the edge servo at the start of the rotation of the servo controller 24, the timing of setting the data acquisition is delayed by the weighting process (weighting time) of the fixed time. This time depends on the number of rotations of the rotary motor 12 and the amount of mounting eccentricity of the wafer 11, and when the number of rotations and the amount of eccentricity is large, the weighting time becomes long. Further, when the eccentricity is 5 mm, the circuit constant of the filter of the block B2 of the sixth figure is set to 30 Hz or less with the setting of the lead/back filter 30 Hz, and the weight time may be 0.

Step (S3): Wafer shape data acquisition

The value of the rotary encoder 14 of the external data of the wafer 11b is the same as the position of the edge detecting sensor 15 (the linear encoder 17 value) corresponding thereto, and is stored as a pair of data in the measurement data reading unit. 25. The ninth figure shows an example of the wafer shape detection result detected by the edge detecting sensor 15, and detects the wafer edge and the groove position over one week.

The servo control unit 24 transmits the stored data to the data processing unit 21 after measuring one piece of rotation data. The control device 20 extracts the groove portion which is not formed on the outer periphery of the wafer 11b or the groove portion from the wafer shape data. The data shown in the orientation plane portion of the graph is calculated from the data to calculate the diameter and eccentricity of the wafer 11b.

The control device 20 uses the calculated value to extract the wafer peripheral data excluding the grooved portion or the orientation flat portion, and determines that the wafer has the correct diameter, eccentric coordinates, and grooved portion (grooved wafer) Or a wafer having an oriented planar portion (orientated planar wafer), or a wafer having no grooved portion or an oriented planar portion, and if the grooved wafer is used, the angle of the grooved position is calculated. The angle of the orientation plane position is calculated for the oriented planar wafer. The angle reference at this time is based on the origin of the rotary motor 12.

For example, in the ninth figure, the groove position is about 3.14 rad.

Further, the type of the wafer 11 is registered in the control device 20 in advance, and when the result of the measured wafer 11 is different from the registered data, for example, when a wafer having no groove is introduced, or when the groove is not inserted, the orientation plane is input. At the time of wafer, the data processing unit 21 may also make an erroneous determination.

Step (S4): Precise measurement of wafer groove

When the grooved wafer is correctly calculated, in order to accurately calculate the angle of the groove position, the data is re-acquired near the groove position while the wafer rotation speed is slowed down, and since the approximate angle of the groove position is obtained in step S3, Before the groove position, the rotary motor 12 is driven and the position is determined. When the rotary motor 12 is in the stopped state, the data processing unit 21 issues a servo ON command to cause the servo control unit 24 to be in the edge tracking state. The servo control unit 24 performs the determination of the completion of the servo pulling, and then rotates the wafer to only a predetermined angle. The control device 20 stores the outer shape including the portion of the groove position in the measurement data reading unit 25 as the edge detection sensor 15 position (linear encoder 17 value) corresponding to the rotary encoder 14 value of the rotary motor 12.

Step (S5): calculation of wafer eccentricity and groove position

Using the result of step S3 and the measurement data obtained in step S4, the data processing unit 21 calculates the eccentricity of the wafer 11b on the turntable 13 and the grooved wafer based on the origin of the rotary motor 12. The angle of the groove position of the measurement is determined, and if it is an oriented planar wafer, the orientation plane position angle of the eccentric correction is calculated.

In the above, the eccentricity and the groove position detection of the wafer 11b are completed, and the eccentric amount of the wafer 11b and the groove position angle obtained here are used for the correction of the next step.

Next, the configuration of the wafer position determining device 50 and the wafer position determining flow of the built-in wafer shape detecting device 10 will be described.

The hardware configuration is explained below. The tenth diagram is a schematic configuration diagram of the wafer position determining device 50, and the XYZ axis is determined as illustrated in the tenth diagram.

The wafer loading machine 51 is a machine for accumulating the wafer 11 from a predetermined storage site to the turntable 13 of the rotary motor 12, and sucks and holds the wafer 11 at the tip end of the arm portion 51a. Further, the wafer loading mechanism 51 has a multi-joint structure telescopic arm portion 51a.

The rotary motor elevating mechanism unit 52 is a drive unit that moves the rotary motor 12 up and down in the vertical direction.

The wafer transfer mechanism unit (Y-axis) 53 is configured to transport the wafer 11 from the position of the rotary motor 12 to the mechanism portion of the wafer holding stage 54 and to hold and hold the wafer 11 at the tip end of the arm portion 53a.

The wafer transfer mechanism unit (Z-axis) 55 is a drive unit that moves the wafer 11 up and down in the vertical direction, and has an adsorption pin for sucking and holding the wafer 11.

The wafer holder 56 is a substrate that holds the removable wafer 11 and has a surface on which the wafer 11 is adsorbed.

The wafer holding stage (θ axis) 54a is driven by the rotating wafer holder 56 The moving portion is provided with a wafer transfer mechanism portion (Z-axis) 55 and has a mechanism for adsorbing and holding the wafer holder 56.

The wafer holding stage (X-axis) 54b moves the wafer holder 56 to the driving portion in the X-axis direction, and mounts the wafer holding stage (θ axis) 54a.

The wafer holding stage (Y-axis) 54c moves the wafer holder 56 to the driving portion in the Y-axis direction, and mounts the wafer holding stage (X-axis) 54b.

The wafer holder loading mechanism 57 is a machine that transports the wafer holder 56 to the wafer holding stage 54. Further, the wafer holder input mechanism 57 can also be used as the wafer loading machine 51.

Further, the wafer position determining device 50 includes a drive controller for each of the drive mechanisms of the rotary motor elevating mechanism 52, the wafer transfer mechanism unit (Y-axis) 53, and the wafer transfer mechanism unit (Z-axis) 55; A drive controller for each of the drive mechanisms of the stage (θ axis) 54a, (X axis) 54b, and (Y axis) 54c; and a drive system controller not shown in the figure including a control unit (CPU). Further, the drive controllers communicate with the data processing unit 21 shown in FIG. 2 to perform the following wafer position determination flow control.

The wafer position determination process is described in each step.

Step S11: wafer input process

The wafer loading machine 51 transports the wafer 11 to the turntable 13.

Step S12: wafer holder input process

The wafer holder loading mechanism 57 transports the wafer holder 56 to the wafer holding stage 54.

Step S13: wafer shape measurement process

The control device 20 performs steps S1 to S5 as shown in the third figure.

Step S14: determining the position of the wafer groove (orientation plane)

The wafer shape detecting device 10 is determined according to the method at step S13. The position of the groove (orientation plane) position determines the position of the groove (orientation plane) at a predetermined angle.

Step S15: wafer holding stage transfer position shift

The wafer shape detecting device 10 determines the position of the wafer holding stage 54 based on the position of the wafer holding stage 54 in accordance with the position of the eccentricity of the wafer, and the center of the wafer holding stage 54 and the center of the wafer 11b. Consistent.

Step S16: The wafer shape detecting device 10 that transports the wafer 11 from the rotary motor 12 to the wafer transfer mechanism unit (Y-axis) 53 causes the rotary motor 12 to be lowered by the rotary motor lifting mechanism unit 52 to be adsorbed to the turntable 13 The wafer 11 is transferred to the wafer transfer mechanism portion (Y-axis) arm portion 53a. After the adsorption of the wafer 11 to the wafer transfer mechanism unit (Y-axis) arm portion 53a is confirmed, the adsorption is released and the transfer to the wafer transfer mechanism unit (Y-axis) arm portion 53a is completed. . The rotary motor elevating mechanism unit 52 is moved to the lower retracted position, and is driven to the wafer holding stage 54 side of the wafer transfer mechanism unit (Y-axis) 53.

Step S17: The wafer 11 is transported from the wafer transfer mechanism unit (Y-axis) 53 to the wafer transfer mechanism unit (Z-axis) 54a.

The wafer position determining device 50 moves the wafer transfer mechanism portion (Y-axis) 53 to the transfer position with the wafer holding stage 54 in the Y direction, and the wafer transfer mechanism portion (Z-axis) 54a is in the wafer transfer mechanism portion. After the (Y-axis) 53 is stopped, it moves in the vertical direction, and the adsorption pin of the wafer transfer mechanism unit (Z-axis) 54a, which is not shown in the figure, is in an adsorption-on state, and is raised to the transfer position, and then the adsorption pin is monitored. In the adsorption state, the adsorption force is slightly shifted in the upward direction until the adsorption force is generated, and when the adsorption force on the adsorption stitch side exceeds a predetermined threshold value, the adsorption of the arm portion 53a on the wafer transfer mechanism portion (Y-axis) 53 side is released. The wafer position determining device 50 is configured to re-adsorb the stitches Ascending, the wafer 11 is lifted to the upper standby position, and then the wafer transfer mechanism portion (Y-axis) 53 is retracted.

Step S18: The wafer 11 is transferred from the wafer transfer mechanism unit (Z-axis) 54a to the wafer holder 56.

The wafer position determining device 50 lowers the adsorption pin of the wafer transfer mechanism unit (Z-axis) 54a while the wafer is being adsorbed, and causes the wafer holder 56 to be in an open state, thereby lowering the adsorption pin to When the adsorption force of the wafer holder exceeds a predetermined critical value until the transfer position, the adsorption on the adsorption lock side is released. The suction stitch system is lowered again and the operation is completed at the lower standby position. In addition, the confirmation of the adsorption force may be confirmed by vacuum pressure, or may be carried out by a time management that ignores the vacuum pressure confirmation.

By the above flow, the position of the groove position of the uppermost wafer 11b of the wafer 11 is determined at a predetermined position of the wafer holder 56.

As described above, the position is determined by the fixing of the wafer 11 of the wafer holder 56 and the wafer holder 56, and the fixing of the other wafer 11 and the wafer holder 56 and the wafer holder 56 are formed. The mark 58 is determined based on the position, and the wafer bonding unit 90 shown in the first figure is pressed and heated by the wafer holder 56, for example, to bond the bonding portions of the two wafers 11 and 11, and the bonding is completed. ) Wafer 11 (refer to the first figure).

According to the wafer bonding apparatus 1 of the first embodiment, the wafer shape detecting device 10 detects the edge of the wafer 11b on the uppermost side of the wafer 11 and detects the groove position, thereby bonding the wafer 11 before. Even in the case of the wafer 11 to which a plurality of substrates are bonded, the outer shape and the groove position of the wafer 11b on the uppermost bonding surface of the wafer 11 can be accurately detected. Further, the eccentric amount and the groove position of the wafer 11 (11b) are corrected based on the edge detection result of the wafer shape detecting device 10, and the wafer position determining device 50 The correct position of the wafer 11 (11b) can be determined by the predetermined position of the wafer holder 56. Thereafter, the bonding unit 90 fixes the two wafers 11 (11b) and the wafer holder 56, and presses and heats the bonding by the wafer holder 56, whereby the bonded wafer 11 having no offset at the bonding position can be manufactured. .

(Second embodiment)

Next, a wafer bonding apparatus according to a second embodiment of the present invention will be described. The main difference between the wafer bonding apparatus of the present embodiment is that the wafer shape detecting device of the first embodiment has a fixed wafer shape detecting sensor using a transmission line sensor, and the other is The same components are denoted by the same reference numerals, and the description thereof will be omitted. In addition, the configuration and operation of the wafer bonding apparatus shown in the first embodiment are also the same, and thus the description thereof will be omitted.

The eleventh drawing is a schematic configuration diagram of the wafer shape detecting device of the second embodiment, and the twelfth drawing is a wafer shape detecting flowchart of the wafer shape detecting device 110. Further, a thirteenth diagram is a schematic configuration diagram of a wafer position determining device according to a second embodiment.

In the eleventh diagram, the wafer shape detecting device 110 is disposed in the vicinity of the outer peripheral portion of the wafer 11 rotated by the transmission line sensor 112, except for the respective configurations shown in the second figure. The same components as those in the second embodiment are denoted by the same reference numerals, and the description thereof will be omitted. Only the transmission line sensor 112 added will be described.

The transmission line sensor 112 irradiates the linear parallel light from the light-emitting portion 112a by the wafer shape detecting sensor which is generally used, and senses the transmitted light at the light-receiving portion 112b and outputs the boundary between the transmitting portion and the shielding portion. The location of the sensor. The transmission line sensor 112 is provided in parallel with the edge detection sensor 15 in the first embodiment. In addition, the installation angle of the transmission line sensor 112 and the edge detection sensor 15 can be arbitrarily set in the wafer rotation direction.

Then, refer to the twelfth figure and use it according to each step. The wafer shape measuring process of the wafer shape detecting device 110 of the second embodiment.

Step S6: Two kinds of sensors are measured by external shape measurement

The edge detecting sensor 15 performs the measurement of step S1 shown in the third figure. At the same time, when the profile sensor 112 is rotated by the turntable 13 of the step S1 shown in the third figure, the wafer 11 is subjected to external measurement.

Step S7: Selection of two kinds of sensors

The precise detection of the groove position is performed at the end of the step S1 shown in the third figure. When the height measurement result of the edge detection sensor 15 detects that the wafer 11 is a single layer wafer, the transmission line sensor 112 is used. Shape measurement results.

On the other hand, when the detecting wafer 11 is a laminated wafer, the edge detecting sensor 15 is used to measure the outer shape and the groove position of the wafer 11. When the wafer 11 is a single layer, even if the transmission line sensor 112 has no problem in shape detection, the measurement time can be shortened.

Step S8: Detection of the lamination state of the wafer

In step S6, when the wafer 11 is a laminated wafer, the edge detecting sensor 15 performs steps S3 to S5 shown in the third figure, and the shape measuring is performed using the transmission line sensor 112.

Step S9: processing of eccentric coordinates calculation, etc.

The control device 20 uses the measurement results of the edge detecting sensor 15 to calculate the eccentric coordinates of the wafer 11 and calculate the groove position.

The calculation result is determined by the position of the wafer used in the wafer position determining device 50 described in the first embodiment.

In addition, in this step, the output of the two sensors from the edge detecting sensor 15 and the transmitting line sensor 112 can detect the offset of the overlapping state of the wafer 11 from which the offset state can be managed. Crystal The quality of the round fit process.

As described above, in the wafer outline detecting device 110 of the second embodiment, the edge detecting sensor 15 and the transmitting line sensor 112 are shared, whereby the crystal of the single layer wafer and the laminated wafer can be shortened. Round shape detection time.

The configuration other than the wafer shape detecting device 110 is the same as that of the first embodiment, and the description of the subsequent processes after the wafer shape detecting is omitted.

Moreover, the edge detecting sensor 15 is disposed on both sides of the front side and the back side of the wafer to perform wafer ID management, thereby detecting the center shift of the wafer above the center of the wafer of the lowermost layer according to each layer. Therefore, the history of the center offset of each layer can be left.

The above-described embodiments are merely examples, and are not limited to the above-described configurations and shapes, and can be appropriately modified and changed within the scope of the invention.

1‧‧‧ wafer bonding device

2‧‧‧Moving machinery

10, 110‧‧‧ Wafer shape inspection device

11‧‧‧Fixed wafer

11a, 11b‧‧‧ wafer

12‧‧‧Rotary motor

13‧‧‧ Turntable

14‧‧‧Rotary encoder

15‧‧‧Edge detection sensor

16‧‧‧Serval

17‧‧‧Linear encoder

18, 28‧‧‧ linear motor

20‧‧‧Control device

21‧‧‧Data Processing Department

22‧‧‧Linear motor driver

23‧‧‧Rotary motor drive

24‧‧‧Servo Control Department

25‧‧‧Measurement data reading department

50‧‧‧ Wafer position determining device

51‧‧‧ Wafer input machinery

51a, 53a‧‧‧arms

52‧‧‧Rotating motor lifting mechanism

53‧‧‧ Wafer Transfer Mechanism Department (Y-axis)

54‧‧‧ wafer holding stage

54a‧‧‧ wafer holding stage (θ axis)

54b‧‧‧Wafer Holder (X-axis)

54c‧‧‧ wafer holding stage (Y axis)

55‧‧‧ Wafer Transfer Mechanism Department (Z-axis)

56‧‧‧ Wafer holder

57‧‧‧ Wafer holder into the machinery

58‧‧‧ mark

90‧‧‧ Wafer Fitting Department

112‧‧‧Transmission line sensor

112a‧‧‧Lighting Department

112b‧‧‧Receiving Department

The first figure is a schematic configuration diagram of a wafer bonding apparatus of an embodiment.

The second drawing is a schematic configuration diagram of the wafer shape detecting device of the first embodiment.

The third figure is a wafer shape inspection flow chart of the wafer shape detecting device.

The fourth A diagram shows an enlarged view of the edge portion of the wafer 11.

The fourth B diagram shows an example of a signal from the edge detecting sensor 15 extending in the radial direction of the wafer.

The fifth A diagram shows an enlarged view of the edge portion of the wafer 11.

The fifth B diagram shows an example of a signal from the edge detecting sensor 15 extending in the radial direction of the wafer.

The fifth C diagram shows an example of forming a signal for defining an edge range based on the signal of the fifth B-picture.

Fig. 6 is a block diagram showing the edge tracking control of the edge detecting device of the wafer shape detecting device of the first embodiment.

The seventh figure is an example of the detection result of the height variation of the wafer surface.

The eighth figure is an example of the servo traction characteristics of the opposite edges.

The ninth figure is an example of the measurement result of the wafer profile detected by the edge detecting sensor.

The tenth diagram is a schematic configuration diagram of the wafer position determining device.

The eleventh drawing is a schematic configuration diagram of a wafer shape detecting device of the second embodiment.

Fig. 12 is a flow chart showing the wafer shape inspection of the wafer shape detecting device of the second embodiment.

Figure 13 is a schematic configuration diagram of a wafer position determining device according to a second embodiment.

11‧‧‧Fixed wafer

11a‧‧‧ wafer

11b‧‧‧ wafer

12‧‧‧Rotary motor

13‧‧‧ Turntable

14‧‧‧Rotary encoder

15‧‧‧Edge detection sensor

16‧‧‧Serval

17‧‧‧Linear encoder

18‧‧‧Linear motor

20‧‧‧Control device

21‧‧‧Data Processing Department

22‧‧‧Linear motor driver

23‧‧‧Rotary motor drive

24‧‧‧Servo Control Department

25‧‧‧Measurement data reading department

Claims (50)

A wafer bonding apparatus is a wafer bonding apparatus that bonds a first wafer and a second wafer to each other, and includes: a detecting unit that outputs when the first wafer is composed of a single wafer a first detection signal indicating the first wafer edge detection result, wherein the first wafer is the uppermost layer of the stacked wafer, and the output indicates the first wafer edge detection result a second detection signal; and a bonding unit, wherein the first wafer and the second wafer are bonded to each other according to the first detection signal when the first wafer is a single wafer, In the case where one wafer is the uppermost wafer, the first wafer and the second wafer are bonded to each other according to the second detection signal. The wafer bonding apparatus of claim 1, wherein the detecting unit has a first edge detecting unit that detects an edge of the first wafer when the first wafer is a single wafer, and outputs the foregoing The first detection signal and the second edge detection unit detect the edge of the first wafer and output the second detection signal when the first wafer is the uppermost wafer. The wafer bonding apparatus according to the second aspect of the invention, comprising: a stage on which the first wafer is placed during detection of the edge, wherein the stage is detected by the first edge detecting unit and The periods detected by the two edge detecting units are used separately. The wafer bonding apparatus of claim 3, wherein the first transfer means for transporting the first wafer to the workbench is provided The first transport means transports the first wafer in a case where the first wafer is a single wafer and a case where the first wafer is the uppermost wafer. The wafer bonding apparatus of claim 4, further comprising: a wafer holding stage, a wafer holder holding the first wafer at a position; and a second conveying means for conveying the wafer holder To the aforementioned wafer holding stage. The wafer bonding apparatus of claim 5, wherein the first conveying means and the second conveying means are the same conveying means. The wafer bonding apparatus according to any one of claims 1 to 6, further comprising: a selection unit that selects the first wafer according to whether the first wafer is a single wafer or the uppermost wafer The detection result of one of the edge detecting device and the second edge detecting device. The wafer bonding apparatus of claim 6, comprising a detecting unit that detects that the first wafer is a single wafer or the uppermost wafer. The wafer bonding apparatus of claim 8, wherein the detecting unit detects a step difference of the wafer, and detects that the first wafer is a single wafer or the uppermost wafer according to a detection result. The wafer bonding apparatus of claim 9, wherein the detecting unit acquires thickness information of each layer of the laminated wafer, and calculates the number of layers based on the thickness information. The wafer bonding apparatus according to any one of claims 8 to 10, wherein the number of layers to be detected is different from the layer information when the wafer is placed, and an error is displayed. The wafer bonding apparatus according to any one of claims 8 to 10, wherein the detecting portion is the second edge detecting device. The wafer bonding apparatus of claim 7, wherein the selection unit selects one of the first edge detecting device and the second edge detecting device based on the wafer layering information at the time of wafer loading. The wafer bonding apparatus according to any one of claims 1 to 6, wherein the second edge detecting means detects a displacement of the thickness direction of the uppermost layer of the wafer. The wafer bonding apparatus of claim 14, wherein the second edge detecting device detects the displacement of the uppermost wafer in the thickness direction by detecting a step difference of the edge of the uppermost wafer. The wafer bonding apparatus according to any one of claims 1 to 6 wherein the second edge detecting means detects the inclination of the edge of the uppermost wafer. The wafer bonding apparatus according to any one of claims 1 to 6 wherein the second edge detecting means detects a change in optical characteristics of the edge of the uppermost wafer. The wafer bonding apparatus of claim 17, wherein the optical characteristic includes at least one of a color and a reflectance of the uppermost wafer. The wafer bonding apparatus according to any one of claims 1 to 6, wherein the first edge detecting device is disposed on the first wafer side to face the first wafer a light-emitting portion that emits light, and a light-receiving portion that is disposed on the other side of the first wafer to receive light that has passed through the first wafer, and outputs a transmission portion that has passed through the first wafer and has been subjected to the first crystal Round shaded The location of the boundary. The wafer bonding apparatus according to any one of claims 1 to 6 and 8 to 10, further comprising: a rotating device that rotates the stacked plurality of wafers; and a servo device to make the second The edge detecting means tracks the displacement of the edge of the uppermost wafer rotated by the rotating means; and the position detecting means detects the position of the second edge detecting means. The wafer bonding apparatus according to any one of the preceding claims, wherein the first edge detecting device detects the first wafer by the single wafer. a groove position formed by the outer peripheral portion of the wafer; and when the first wafer is the uppermost wafer, the second edge detecting device detects a groove position formed by an outer peripheral portion of the uppermost wafer. The wafer bonding apparatus of claim 5, wherein the wafer bonding apparatus has a third conveying means for transferring the first wafer to the wafer holder. The wafer bonding apparatus of claim 22, wherein the foregoing position relative to the predetermined position of the wafer holder is corrected according to a detection result of the eccentric amount, the groove position or the orientation plane position of the first wafer The immersion amount of a wafer, the groove position or the orientation plane position, determines the first wafer position from the wafer holder. The wafer bonding apparatus according to any one of claims 1 to 6 and 8 to 10, wherein the bonding portion is detected according to the first edge detecting portion or the second edge Income The first wafer and the second wafer are bonded to each other by the detection result of the first wafer and the detection result of the second wafer obtained by the first edge detecting unit or the second edge detecting unit . A wafer bonding method is a wafer bonding method in which a first wafer and a second wafer are bonded to each other, and includes a detection process, and the first wafer is composed of a single wafer, and the output is performed. a first detection signal indicating a detection result of the first wafer edge, wherein the first wafer is an uppermost layer of the uppermost layer of the laminated wafer, and the output indicates the edge of the first wafer a second detection signal of the detection result; and a bonding process, wherein the first wafer and the second wafer are bonded to each other according to the first detection signal when the first wafer is a single wafer In the case where the first wafer is the uppermost wafer, the first wafer and the second wafer are bonded to each other according to the second detection signal. The wafer bonding method of claim 25, wherein the detecting process has: a first edge detecting process, wherein the first wafer is a single wafer, detecting an edge of the first wafer, and outputting the foregoing The first detection signal and the second edge detection process detect the edge of the first wafer and output the second detection signal when the first wafer is the uppermost wafer. The wafer bonding method of claim 26, wherein the processing of the edge is performed on the stage of the first wafer, and the detection is performed by the first edge detecting process and the second The edge detection process is used during the detection period. The wafer bonding method of claim 27, which has the following processes: using the first transfer means, the case where the first wafer is a single wafer, and the case of the uppermost wafer In this case, the first wafer is transferred to the aforementioned stage. The wafer bonding method of claim 28, wherein the method of transporting the wafer holder to a wafer holder position for holding the first wafer is performed by using a second transfer means Keep the stage in the circle. The wafer bonding method according to claim 29, wherein the first conveying means and the second conveying means are the same conveying means. The wafer bonding method according to any one of claims 25 to 30, wherein a selection process is provided, wherein the selection process is performed according to whether the first wafer is a single wafer or the uppermost wafer is An edge detection process and a detection result of one of the foregoing second edge detection processes. The wafer bonding method of claim 31, wherein the detecting process is configured to detect that the first wafer is a single wafer or the uppermost wafer. The wafer bonding method of claim 32, wherein the detecting process detects a step difference of the wafer, and detects the first wafer as a single wafer or the uppermost wafer according to the detection result. The wafer bonding method of claim 32, wherein the detecting process obtains thickness information of each layer of the stacked wafer, and calculates the number of layers based on the thickness information. The wafer bonding method according to any one of claims 32 to 34, wherein the number of layers to be detected and the layer information of the wafer input are not At the same time, the error is displayed. The wafer bonding method of claim 32, wherein the foregoing detecting process is the foregoing second edge detecting process. The wafer bonding method of claim 31, wherein the selecting process selects one of the first edge detecting process and the second edge detecting process according to the wafer layering information at the time of wafer loading. The wafer bonding method according to any one of claims 25 to 30, wherein the second edge detecting process detects a displacement of the thickness direction of the uppermost wafer. The wafer bonding method of claim 38, wherein the second edge detecting process detects the displacement of the thickness direction of the uppermost wafer by detecting a step difference of the edge of the uppermost wafer. The wafer bonding method according to any one of claims 25 to 30, wherein the second edge detecting process detects the inclination of the edge of the uppermost wafer. The wafer bonding method according to any one of claims 25 to 30, wherein the second edge detecting process detects a change in optical characteristics of the edge of the uppermost wafer. The wafer bonding method of claim 41, wherein the optical characteristic includes at least one of a color and a reflectance of the uppermost wafer. The wafer bonding method according to any one of claims 25 to 30, wherein in the first edge detecting process, the first wafer is irradiated with light from a light emitting portion disposed on a side of the first wafer Receiving the light receiving unit disposed on the other side of the first wafer has passed the foregoing The light of one wafer outputs a position that has passed through the boundary between the transmitting portion of the first wafer and the shielding portion that has been shielded by the first wafer. The wafer bonding method according to any one of claims 25 to 30, further comprising: a rotating process for rotating the stacked plurality of wafers; and a tracking process for detecting the second edge detecting process The portion tracks the displacement of the edge of the uppermost wafer rotated by the rotating method; and the position detecting process detects the position of the detecting portion. The wafer bonding method according to any one of claims 25 to 30, wherein in the case where the first wafer is composed of the single wafer, the first edge detecting process detects the outer periphery of the wafer The groove position formed by the process; in the case where the first wafer is the uppermost wafer, the second edge detection process detects a groove position formed by the outer peripheral process of the uppermost wafer. A wafer bonding method according to claim 29, further comprising a third transfer process for transferring the first wafer to the wafer holder. The wafer bonding method of claim 46, wherein the foregoing position relative to the predetermined position of the wafer holder is corrected according to a detection result of the eccentric amount, the groove position or the orientation plane position of the first wafer The immersion amount of a wafer, the groove position or the orientation plane position, determines the first wafer position from the wafer holder. The wafer bonding method according to any one of claims 25 to 30, wherein the foregoing bonding process obtains the detection of the first wafer according to the first edge detecting process or the second edge detecting process. As a result, and the detection result of the second wafer obtained by the first edge detecting process or the second edge detecting process, the first wafer and the second wafer are bonded to each other. A wafer detecting device comprising: a detecting unit that detects whether a wafer to be detected is a single wafer, or an uppermost layer wafer that constitutes an uppermost layer among stacked layers of a wafer; and an output unit outputs the foregoing The detection result generated by the detection unit. A wafer inspection method, comprising: detecting a process, detecting that a wafer to be detected is a single wafer, or forming an uppermost layer of a wafer in a stacked layer of stacked wafers; and an output process, outputting the foregoing Test the test results produced by the project.