TWI482837B - Complexes with tridentate ligands - Google Patents

Complexes with tridentate ligands Download PDF

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TWI482837B
TWI482837B TW097138307A TW97138307A TWI482837B TW I482837 B TWI482837 B TW I482837B TW 097138307 A TW097138307 A TW 097138307A TW 97138307 A TW97138307 A TW 97138307A TW I482837 B TWI482837 B TW I482837B
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aryl
aralkyl
alkynyl
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TW200927876A (en
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Robert W Walters
Jui Yi Tsai
Peter Borden Mackenzie
Scott A Beers
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Universal Display Corp
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    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/06Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
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    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/0006Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table compounds of the platinum group
    • C07F15/002Osmium compounds
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    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
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    • C09K2211/00Chemical nature of organic luminescent or tenebrescent compounds
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    • C09K2211/00Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/10Non-macromolecular compounds
    • C09K2211/1018Heterocyclic compounds
    • C09K2211/1025Heterocyclic compounds characterised by ligands
    • C09K2211/1029Heterocyclic compounds characterised by ligands containing one nitrogen atom as the heteroatom
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    • C09K2211/00Chemical nature of organic luminescent or tenebrescent compounds
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    • C09K2211/185Metal complexes of the platinum group, i.e. Os, Ir, Pt, Ru, Rh or Pd
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10S428/917Electroluminescent

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Description

具三叉配位基之複合物Complex with trigeminal ligand

本發明係關於有機發光裝置(OLED),且更特別是此種裝置中所使用之磷光有機材料。更明確言之,本發明係關於發射磷光材料,其包含至少一個經結合至金屬中心之三叉配位基,其中至少一個對三叉配位基之鍵結為碳-金屬鍵。The present invention relates to organic light-emitting devices (OLEDs), and more particularly to phosphorescent organic materials used in such devices. More specifically, the present invention relates to an emissive phosphorescent material comprising at least one tridentate ligand bonded to a metal center, wherein at least one of the tridentate ligands is bonded to a carbon-metal bond.

本申請案為2007年10月4日提出申請之美國專利申請案號11/973,265之部份連續案,其係併於本文供參考。This application is a continuation-in-part of U.S. Patent Application Serial No. 11/973,265, filed on Oct. 4, 2007, which is incorporated herein by reference.

利用有機材料之光電子裝置由於多種原因係逐漸地變成一般所期望的。許多用以製造此種裝置之材料係相對較不昂貴,因此有機光電子裝置具有勝過無機裝置之成本利益之潛力。此外,有機材料之固有性質,譬如其撓性,可使得彼等極適合特定應用,譬如在可撓性基板上之製造。有機光電子裝置之實例包括有機發光裝置(OLED)、有機光敏晶體管、有機光生伏打電池及有機光檢測器。對於OLED,有機材料可具有勝過習用材料之性能優點。例如,於有機發射層發射光線下之波長通常可容易地以適當摻雜劑調整。Optoelectronic devices utilizing organic materials have gradually become generally desirable for a variety of reasons. Many of the materials used to make such devices are relatively inexpensive, and thus organic optoelectronic devices have the potential to outweigh the cost benefits of inorganic devices. In addition, the inherent properties of organic materials, such as their flexibility, make them ideal for specific applications, such as fabrication on flexible substrates. Examples of organic optoelectronic devices include organic light-emitting devices (OLEDs), organic phototransistors, organic photovoltaic cells, and organic photodetectors. For OLEDs, organic materials can have performance advantages over conventional materials. For example, the wavelength at which the organic emissive layer emits light can generally be readily adjusted with a suitable dopant.

於本文中使用之"有機物"一詞係包括聚合材料以及小分子有機物質,其可用以製造有機光電子裝置。"小分子"係指不為聚合體之任何有機物質,且"小分子"實際上可相當大。小分子可在一些情況中包含重複單位。例如,使用長鏈烷基作為取代基,不會將分子自"小分子"種類移除。小分子亦可被併入聚合體中,例如作為聚合體主鏈上之懸垂基團,或作為主鏈之一部份。小分子亦可充作樹枝狀體之核心部份基團,該樹枝狀體係包含一系列被建立在核心部份基團上之化學殼。樹枝狀體之核心部份基團可為螢光或磷光小分子發射體。樹枝狀體可為"小分子",且咸信目前使用於OLED領域中之所有樹枝狀體均為小分子。一般而言,小分子具有定義明確之化學式,具有單一分子量,然而聚合體具有可隨著分子改變之化學式與分子量。The term "organic" as used herein includes polymeric materials as well as small molecular organic materials that can be used to make organic optoelectronic devices. "Small molecule" refers to any organic material that is not a polymer, and "small molecules" can actually be quite large. Small molecules can contain repeating units in some cases. For example, the use of a long chain alkyl group as a substituent does not remove the molecule from the "small molecule" species. Small molecules can also be incorporated into the polymer, for example as a pendant group on the polymer backbone, or as part of the backbone. Small molecules can also act as a core part of the dendrimer, which contains a series of chemical shells that are built on the core moiety. The core portion of the dendrimer can be a fluorescent or phosphorescent small molecule emitter. The dendrites can be "small molecules" and all of the dendrimers currently used in the field of OLEDs are small molecules. In general, small molecules have well-defined chemical formulas with a single molecular weight, whereas polymers have chemical formulas and molecular weights that can vary with the molecule.

OLED係利用有機薄膜,當施加電壓越過該裝置時,其會發射光線。OLED係逐漸變成一種漸增地令人感興趣之技術,供使用於一些應用中,譬如平板顯示器、照明及背光照明。數種OLED材料與型態係被描述於美國專利案號5,844,363、6,303,238及5,707,745中,其係以全文併於本文供參考。OLEDs utilize an organic film that emits light when a voltage is applied across the device. OLED systems are becoming an increasingly interesting technology for use in applications such as flat panel displays, lighting and backlighting. A number of OLED materials and types are described in U.S. Patent Nos. 5,844,363, 6, 303, 238, and 5, 707, 745, the entireties of each of

OLED裝置通常(但未必總是)係意欲經過至少一個電極發射光線,且一或多個透明電極可用於有機光電子裝置中。例如,透明電極材料,譬如氧化銦錫(ITO),可作為底部電極使用。透明頂部電極亦可使用,譬如於美國專利案號5,703,436與5,707,745中所揭示者,其係以全文併入供參考。對於意欲僅經過底部電極發射光線之裝置,頂部電極不必為透明,且可包含具有高導電性之厚且反射性金屬層。同樣地,對於意欲僅經過頂部電極發射光線之裝置,底部電極可為不透明及/或反射性。在電極不必為透明之情況下,使用較厚層可提供較佳導電性,而使用反射電極可增加經過其他電極所發射光線之量,其方式是使光線反射返回朝向透明電極。亦可製造完全透明裝置,其中兩個電極均為透明。亦可製造側面發射之OLED,且一或兩個電極在此種裝置中可為不透明或反射性。OLED devices are typically, but not always, intended to emit light through at least one electrode, and one or more transparent electrodes can be used in an organic optoelectronic device. For example, a transparent electrode material, such as indium tin oxide (ITO), can be used as the bottom electrode. A transparent top electrode can also be used as disclosed in U.S. Patent Nos. 5,703,436 and 5,707,745, the entireties of each of For devices intended to emit light only through the bottom electrode, the top electrode need not be transparent and may comprise a thick and reflective metal layer with high electrical conductivity. Likewise, for devices intended to emit light only through the top electrode, the bottom electrode can be opaque and/or reflective. Where the electrodes do not have to be transparent, the use of thicker layers provides better conductivity, while the use of reflective electrodes increases the amount of light that is emitted through the other electrodes by reflecting the light back toward the transparent electrodes. It is also possible to manufacture a completely transparent device in which both electrodes are transparent. Side-emitting OLEDs can also be fabricated, and one or both of the electrodes can be opaque or reflective in such devices.

於本文中使用之"頂部"係意謂最遠離基板,然而"底部"係意謂最接近基板。例如,關於具有兩個電極之裝置,底部電極為最接近基板之電極,且通常為所製造之第一個電極。底部電極具有兩個表面,最接近基板之底部表面與遠離基板之頂部表面。在第一層係被描述為"經配置於"第二層上方之情況下,第一層係經配置遠離基板。可以有其他層在第一與第二層之間,除非指定第一層係與第二層"物理接觸"。例如,陰極可被描述為"經配置於"陽極上方,即使有各種有機層在其間亦然。As used herein, "top" means the farthest from the substrate, whereas "bottom" means the closest to the substrate. For example, with respect to a device having two electrodes, the bottom electrode is the electrode closest to the substrate and is typically the first electrode fabricated. The bottom electrode has two surfaces, closest to the bottom surface of the substrate and away from the top surface of the substrate. Where the first layer is described as being "configured over" the second layer, the first layer is configured to be remote from the substrate. There may be other layers between the first and second layers unless the first layer is designated to be "physically contacted" with the second layer. For example, a cathode can be described as being "configured over" an anode, even with various organic layers in between.

於本文中使用之"溶液可處理"係意謂能夠於液體媒質中溶解、分散或輸送,及/或自其沉積,無論是呈溶液或懸浮液形式。As used herein, "solution treatable" means capable of dissolving, dispersing or transporting in a liquid medium, and/or depositing therefrom, either in solution or as a suspension.

當於本文中使用,且如熟諳此藝者所一般性地明瞭時,若第一個能階較接近真空能階,則第一個"最高佔有分子軌道"(HOMO)或"最低未佔有分子軌道"(LUMO)能階係"大於"或"高於"第二個HOMO或LUMO能階。由於電離電位(IP)係以相對於真空能階之負能量進行度量,故較高HOMO能階係相應於具有較小絕對值之IP(較不負值之IP)。同樣地,較高LUMO能階係相應於具有較小絕對值之電子親和力(EA)(較不負值之EA)。在習用能階圖上,具有真空能階在頂部,一種材料之LUMO能階係高於相同材料之HOMO能階。"較高"HOMO或LUMO能階係顯示比"較低"HOMO或LUMO能階更接近此種圖之頂部。As used herein, and as is generally understood by those skilled in the art, if the first energy level is closer to the vacuum level, then the first "highest occupied molecular orbital" (HOMO) or "minimum unoccupied molecule" The track "(LUMO) energy system" is greater than "or higher than" the second HOMO or LUMO energy level. Since the ionization potential (IP) is measured in terms of the negative energy relative to the vacuum level, the higher HOMO energy level corresponds to an IP with a smaller absolute value (less negative IP). Likewise, a higher LUMO energy level corresponds to an electron affinity (EA) with a smaller absolute value (less negative EA). On the conventional energy level diagram, the vacuum energy level is at the top, and the LUMO energy level of one material is higher than the HOMO energy level of the same material. The "higher" HOMO or LUMO energy system shows closer to the top of such a graph than the "lower" HOMO or LUMO energy level.

碳烯配位基在有機金屬化學中已為習知,且被用以產生廣範圍之熱安定性催化物質。碳烯配位基已被採用作為活性基團,直接參與催化反應,及充作使呈特定氧化狀態或配位幾何形狀之金屬安定化之角色。但是,碳烯配位基之應用在光化學中並非習知。Carbene ligands are well known in organometallic chemistry and are used to produce a wide range of thermally stable catalytic species. Carbonene ligands have been employed as reactive groups, directly involved in the catalytic reaction, and acted as a stabilizer for metals in specific oxidation states or coordination geometries. However, the use of carbene ligands is not well known in photochemistry.

關於許多現存有機電致發光化合物之一項問題,係為其供使用於市購裝置中不足夠安定。對於在光譜之藍色部份中發射之磷光發射材料,這特別是真實的。本發明之一項目的係為提供一種具有經改良安定性之有機發射化合物。本發明之一項目的係為提供一種有機發射化合物,其可以安定方式發射具有各種光譜之光線,包括高能量光譜,譬如藍色。One of the problems with many existing organic electroluminescent compounds is that they are not sufficiently stable for use in commercially available devices. This is especially true for phosphorescent emissive materials that emit in the blue portion of the spectrum. One item of the present invention is to provide an organic emissive compound having improved stability. One item of the present invention is to provide an organic emissive compound that emits light having various spectra, including high energy spectra, such as blue, in a stable manner.

本發明係針對有機發光裝置,其具有包含磷光有機金屬發射材料之發射層,該材料具有經過至少一個碳烯-金屬鍵結合至金屬中心之至少一個三叉配位基。於一項較佳具體實施例中,發射材料包含兩個經結合至金屬中心之三叉配位基,其可為相同或不同,其中至少一個三叉配位基具有碳烯-金屬鍵。The present invention is directed to an organic light-emitting device having an emissive layer comprising a phosphorescent organometallic emissive material having at least one tridentate ligand bonded to a metal center via at least one carbene-metal bond. In a preferred embodiment, the emissive material comprises two tridentate ligands bonded to a metal center, which may be the same or different, wherein at least one of the tridentate ligands has a carbene-metal bond.

於一項較佳具體實施例中,本發明係針對有機發光裝置,其包含陽極、陰極及經配置於該陽極與陰極間之磷光發射區域,其中發射區域包含具有式I之發射材料:In a preferred embodiment, the present invention is directed to an organic light-emitting device comprising an anode, a cathode, and a phosphorescent emitting region disposed between the anode and the cathode, wherein the emitting region comprises an emissive material having the formula I:

其中:among them:

M為第二或第三列過渡金屬;M is a second or third column transition metal;

L為輔助配位基;L is an auxiliary ligand;

環A係選自包括:Ring A is selected from the group consisting of:

(a)具有3至5個環雜原子之8-至12-員雙環狀基團;(a) an 8- to 12-membered bicyclic group having 3 to 5 ring heteroatoms;

(b)具有3至6個環雜原子之11-至18-員三環狀基團;(b) an 11- to 18-membered tricyclic group having 3 to 6 ring heteroatoms;

(c)11-至14-員經稠合三環狀基團;及(c) a 11- to 14-membered fused tricyclic group;

(d)14-至18-員經稠合四環狀基團;(d) a 14- to 18-membered fused tetracyclic group;

各RA 係獨立選自烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基;a 為0至4;環B 係選自5-或6-員環狀基團、8-至12-員雙環狀基團、11-至18-員三環狀基團、11-至14-員經稠合三環狀基團及14-至18-員經稠合四環狀基團;各RB 係獨立選自烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基;b 為0至4;X1 係選自C-R1 與N;X2 係選自C-R2 與N;X3 係選自C-R3 與N;R1 、R2 及R3 係獨立選自烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基;或者,R1 與R2 或R2 與R3 一起採用而形成5-或6-員環狀基團、8-至10-員經稠合雙環狀基團、11-至14-員經稠合三環狀基團,其可視情況被一或多個取代基取代,取代基獨立選自烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基;另外或替代地,R1 與RB 一起採用而形成5-或6-員環狀基團或8-至10-員經稠合雙環狀基團;另外或替代地,R3 與RA 一起採用而形成5-或6-員環狀基團或8-至10-員經稠合雙環狀基團;各R'係獨立選自H、烷基、烯基、炔基、芳烷基、芳基及雜芳基;各R"係獨立選自H、烷基、烯基、炔基及芳烷基;n 為1或2;且m 為0至3,其中當n 為1時,m為1至3,而當n 為2時,m 為0。Each R A is independently selected from the group consisting of alkyl, alkenyl, alkynyl, aralkyl, O-R', N(R') 2 , SR', C(O)R', C(O)OR', C (O)NR' 2 , CN, CF 3 , NO 2 , SO 2 R', SOR', SO 3 R', Si(R") 3 , halo, aryl and heteroaryl; a is 0 to 4 Ring B is selected from the group consisting of a 5- or 6-membered cyclic group, an 8- to 12-membered bicyclic group, an 11- to 18-membered tricyclic group, and an 11- to 14-membered fused group. a tricyclic group and a 14- to 18-membered fused tetracyclic group; each R B group is independently selected from the group consisting of alkyl, alkenyl, alkynyl, aralkyl, O-R', N (R' 2 , SR', C(O)R', C(O)OR', C(O)NR' 2 , CN, CF 3 , NO 2 , SO 2 R', SOR', SO 3 R', Si (R") 3 , halo, aryl and heteroaryl; b is 0 to 4; X 1 is selected from CR 1 and N; X 2 is selected from CR 2 and N; X 3 is selected from CR 3 and N; R 1 , R 2 and R 3 are independently selected from alkyl, alkenyl, alkynyl, aralkyl, O-R', N(R') 2 , SR', C(O)R', C (O)OR', C(O)NR' 2 , CN, CF 3 , NO 2 , SO 2 R', SOR', SO 3 R', Si(R") 3 , halo, aryl and heteroaryl Or R 1 and R 2 or R 2 together with R 3 to form a 5- or 6-membered cyclic group, 8- to 10-membered fused bicyclic ring a group, 11- to 14-membered fused tricyclic group, which may optionally be substituted by one or more substituents independently selected from alkyl, alkenyl, alkynyl, aralkyl, O -R', N(R') 2 , SR', C(O)R', C(O)OR', C(O)NR' 2 , CN, CF 3 , NO 2 , SO 2 R', SOR ', SO 3 R', Si(R") 3 , halo, aryl and heteroaryl; additionally or alternatively, R 1 is taken together with R B to form a 5- or 6-membered cyclic group or 8 - to a 10-membered fused bicyclic group; additionally or alternatively, R 3 is used together with R A to form a 5- or 6-membered cyclic group or a 8- to 10-membered fused bicyclic ring a radical; each R' is independently selected from the group consisting of H, alkyl, alkenyl, alkynyl, aralkyl, aryl and heteroaryl; each R" is independently selected from H, alkyl, alkenyl, alkynyl and an aralkyl group; n is 1 or 2; and m is 0 to 3, wherein when n is 1, m is 1 to 3, and when n is 2, m is 0.

詳細說明Detailed description

一般而言,OLED包含至少一個有機層,經配置在陽極與陰極之間,且電連接至彼等。當施加電流時,陽極係注入空穴,而陰極係注入電子至有機層中。被注入之空穴與電子各朝向帶相反電荷之電極潛移。當電子與空穴定位在相同分子上時,係形成"激發子",其係為具有受激能態之定域化電子-空穴對。當激發子鬆弛時,光線係經由光發射機制發射。在一些情況中,激發子可被定位在激元或受激複合分子上。非放射性機制,譬如熱鬆弛,亦可存在,但一般認為是非所需的。In general, an OLED comprises at least one organic layer disposed between an anode and a cathode and electrically connected to them. When a current is applied, the anode injects holes, and the cathode injects electrons into the organic layer. The injected holes and electrons each migrate toward the oppositely charged electrode. When electrons and holes are positioned on the same molecule, an "exciter" is formed, which is a localized electron-hole pair having an excited state. When the excitons relax, the light is emitted via a light emission mechanism. In some cases, an exciton can be localized on an excimer or an excited complex molecule. Non-radioactive mechanisms, such as thermal relaxation, may also be present, but are generally considered to be undesirable.

最初之OLED係使用自其單重態("螢光")發射光線之發射分子,如揭示於例如美國專利4,769,292中者,其係以全文併入供參考。螢光發射通常係發生在小於10毫微秒之時間架構中。The original OLEDs used an emitting molecule that emits light from its singlet state ("fluorescent"), as disclosed in, for example, U.S. Patent No. 4,769,292, the disclosure of which is incorporated herein in its entirety. Fluorescent emissions typically occur in a timeframe of less than 10 nanoseconds.

又最近,具有自三重態("磷光")發射光線之發射材料之OLED已被証實。Baldo等人,"自有機電致發光裝置之高度地有效磷光發射,"Nature,第395卷,151-154,1998;("Baldo-I")與Baldo等人,"以電致磷光為基礎之極高效率綠色有機發光裝置,"Appl. Phys. Lett.,第75卷,第3期,4-6(1999)("Baldo-II"),其係以全文併入供參考。磷光可被稱為"禁忌"轉變,因為此轉變需要在旋轉狀態上改變,且量子力學顯示此種轉變是不利的。因此,磷光通常係發生在超過至少10毫微秒,而典型上大於100毫微秒之時間架構中。若磷光之天然放射壽命太長,則三重態可藉由非放射性機制衰減,以致沒有光線被發射。有機磷光亦經常在極低溫度下被發現於含有具未共用電子對之雜原子之分子中。2,2'-聯吡吡為此種分子。非放射性衰減機制典型上為溫度依存性,以致在液態氮溫度下顯示磷光之有機材料典型上不會在室溫下顯示磷光。但是,正如由Baldo所証實,此項問題可藉由選擇在室溫下確實會發出磷光之磷光化合物尋求解決。代表性發射層包括經摻雜或未經摻雜之磷光有機金屬材料,譬如於美國專利案號6,303,238與6,310,360;美國專利申請案公報2002-0034656;2002-0182441;2003-0072964;以及WO-02/074015中所揭示者。Recently, OLEDs having an emissive material that emits light from a triplet state ("phosphor") have been confirmed. Baldo et al., "Highly Effective Phosphorescence Emission from Organic Electroluminescent Devices," Nature, Vol. 395, 151-154, 1998; ("Baldo-I") and Baldo et al., "Based on Electrophosphorescence" A highly efficient green organic light-emitting device, "Appl. Phys. Lett., Vol. 75, No. 3, 4-6 (1999) ("Baldo-II"), which is incorporated by reference in its entirety. Phosphorescence can be referred to as a "taboo" transition because this transition needs to change in the state of rotation, and quantum mechanics shows that such a transition is disadvantageous. Thus, phosphorescence typically occurs in a time architecture that exceeds at least 10 nanoseconds, and typically greater than 100 nanoseconds. If the natural radiation lifetime of phosphorescence is too long, the triplet state can be attenuated by a non-radioactive mechanism such that no light is emitted. Organic phosphorescence is also often found at very low temperatures in molecules containing heteroatoms with unshared electron pairs. 2,2'-bipyridyl is such a molecule. Non-radioactive decay mechanisms are typically temperature dependent such that organic materials that exhibit phosphorescence at liquid nitrogen temperatures typically do not exhibit phosphorescence at room temperature. However, as confirmed by Baldo, this problem can be solved by choosing a phosphorescent compound that does emit phosphorescence at room temperature. Representative emissive layers include doped or undoped phosphorescent organometallic materials, such as in U.S. Patent Nos. 6,303,238 and 6,310,360; U.S. Patent Application Publication Nos. 2002-0034656; 2002-0182441; 2003-0072964; Revealed in /074015.

一般而言,咸認在OLED中之激發子會以約3:1之比例產生,意即大約75%三重態與25%單態。參閱Adachi等人,"在有機發光裝置中接近100%內部磷光效率,"J. Appl. Phys.,90,5048(2001),其係以全文併入供參考。在許多情況中,單重態激發子可容易地經由"系統間過渡"轉移其能量至三重態激發狀態,然而三重態激發子不可容易地轉移其能量至單態激發狀態。因此,100%內部量子效率理論上使用磷光OLED係為可能。在螢光裝置中,三重態激發子之能量通常會喪失至無放射衰減過程,其會使裝置加熱,造成遠為較低之內部量子效率。利用自三重激發狀態發射之磷光材料之OLED係揭示於例如美國專利6,303,238中,其係以全文併入供參考。In general, the excitons identified in the OLED will be produced in a ratio of about 3:1, meaning about 75% triplet and 25% singlet. See Adachi et al., "Close to 100% internal phosphorescent efficiency in organic light-emitting devices," J. Appl. Phys., 90, 5048 (2001), which is incorporated by reference in its entirety. In many cases, singlet excitons can easily transfer their energy to a triplet excited state via an "intersystem transition", whereas triplet excitons cannot easily transfer their energy to a singlet excited state. Therefore, it is possible to theoretically use a phosphorescent OLED system for 100% internal quantum efficiency. In a fluorescent device, the energy of the triplet excitons is typically lost to a non-radiative decay process that heats the device, resulting in much lower internal quantum efficiency. An OLED system utilizing a phosphorescent material that emits light from a triplet excited state is disclosed, for example, in U.S. Patent No. 6,303,238, the disclosure of which is incorporated herein by reference.

磷光之前可為自三重受激態轉變至中間物非三重態,發射衰減係自其發生。例如,經配位至鑭系元素之有機分子係經常自被定位在鑭系金屬上之激發狀態發出磷光。但是,此種材料不會直接地自三重受激態發出磷光,而是替代地自鑭系金屬離子中心之原子受激態發射。二酮酸銪錯合物係說明此等物種類型之一個組群。Phosphorescence can be preceded by a transition from a triplet excited state to an intermediate non-triplet state from which emission decay occurs. For example, organic molecules coordinated to lanthanides often emit phosphorescence from an excited state that is localized on the lanthanide metal. However, such materials do not directly emit phosphorescence from the triplet excited state, but instead emit from the excited state of the atomic center of the lanthanide metal ion. A bismuth dicarboxylate complex is a group that describes these species types.

得自三重態之磷光可被加強而勝過螢光,其方式是限制,較佳係經過結合緊密接近具高原子序之原子之有機分子。被稱為重原子效應之此種現象係藉由稱為旋轉軌道偶合之機制產生。此種磷光轉變可自有機金屬分子譬如參(2-苯基吡啶)銥(III)之受激金屬對配位基電荷轉移(MLCT)狀態發現。Phosphorescence from triplet states can be enhanced to outweigh fluorescence, in a manner that is limited, preferably by organic molecules that bind closely to atoms with high atomic order. This phenomenon, known as the heavy atom effect, is produced by a mechanism called rotational orbital coupling. Such a phosphorescence transition can be found from an excited metal-to-ligand charge transfer (MLCT) state of an organometallic molecule such as ginseng (2-phenylpyridine) ruthenium (III).

於本文中使用之"三重態能量"一詞係指相應於特定材料磷光光譜中可辨識之最高能量特徵之能量。最高能量特徵未必是磷光光譜上具有最大強度之吸收峰,而可為例如此種吸收峰之高能量側面上清楚肩部之局部最大值。The term "triplet energy" as used herein refers to the energy corresponding to the highest energy characteristic identifiable in the phosphorescence spectrum of a particular material. The highest energy characteristic is not necessarily the absorption peak having the greatest intensity in the phosphorescence spectrum, but may be, for example, a local maximum of the clear shoulder on the high energy side of such an absorption peak.

於本文中使用之"有機金屬"一詞係如一般熟諳此藝者所大致上明瞭,且如在例如"無機化學"(第2版)Gary L. Miessler與Donald A. Tarr,Prentice Hall(1998)中所示。因此,有機金屬一詞係指具有經過碳-金屬鍵結合至金屬之有機基團之化合物。此種類不包括本身配位化合物,其係為僅具有得自雜原子之供體鍵結之物質,譬如胺類、鹵化物、擬鹵化物(CN等)等之金屬錯合物。實際上,有機金屬化合物,除了一或多個對有機物種之碳-金屬鍵以外,一般係包含得自雜原子之一或多個供體鍵結。對有機物種之碳-金屬鍵係指在金屬與有機基團(譬如苯基、烷基、烯基等)之碳原子間之直接鍵結,但非指對"無機碳"譬如CN或CO之碳之金屬鍵。The term "organic metal" as used herein is generally understood by those skilled in the art and as in, for example, "Inorganic Chemistry" (2nd Edition) by Gary L. Miessler and Donald A. Tarr, Prentice Hall (1998). ) shown in ). Thus, the term organometallic refers to a compound having an organic group bonded to a metal via a carbon-metal bond. This species does not include a self-coordinating compound which is a metal complex having only a donor bond derived from a hetero atom, such as an amine, a halide, a pseudohalide (CN, etc.). In fact, organometallic compounds, in addition to one or more carbon-metal bonds to organic species, typically comprise one or more donor bonds derived from a hetero atom. The carbon-metal bond to an organic species refers to a direct bond between a metal and a carbon atom of an organic group (such as a phenyl group, an alkyl group, an alkenyl group, etc.), but does not refer to an "inorganic carbon" such as CN or CO. Carbon metal key.

圖1顯示有機發光裝置100。此等圖未必按比例畫出。裝置100可包含基板110、陽極115、空穴注入層120、空穴輸送層125、電子阻斷層130、發射層135、空穴阻斷層140、電子輸送層145、電子注入層150、保護層155及陰極160。陰極160為複合陰極,具有第一個導電層162與第二個導電層164。裝置100可藉由按順序沉積所述之層而製成。FIG. 1 shows an organic light emitting device 100. These figures are not necessarily drawn to scale. The device 100 may include a substrate 110, an anode 115, a hole injection layer 120, a hole transport layer 125, an electron blocking layer 130, an emission layer 135, a hole blocking layer 140, an electron transport layer 145, an electron injection layer 150, and protection. Layer 155 and cathode 160. Cathode 160 is a composite cathode having a first conductive layer 162 and a second conductive layer 164. Device 100 can be fabricated by depositing the layers in sequence.

基板110可為提供所要結構性質之任何適當基板。基板110可為可撓性或剛性。基板110可為透明、半透明或不透明。塑膠與玻璃為較佳剛性基板材料之實例。塑膠與金屬箔為較佳可撓性基板之實例。基板110可為半導體材料,以幫助電路系統之製造。例如,基板110可為矽晶圓,電路係於其上製成,能夠控制接著沉積在基板上之OLED。可使用其他基板。基板110之材料與厚度可經選擇,以獲得所要之結構與光學性質。Substrate 110 can be any suitable substrate that provides the desired structural properties. The substrate 110 can be flexible or rigid. The substrate 110 can be transparent, translucent or opaque. Plastic and glass are examples of preferred rigid substrate materials. Plastic and metal foil are examples of preferred flexible substrates. Substrate 110 can be a semiconductor material to aid in the fabrication of circuitry. For example, the substrate 110 can be a germanium wafer on which circuitry is fabricated to control the OLEDs that are subsequently deposited on the substrate. Other substrates can be used. The material and thickness of the substrate 110 can be selected to achieve the desired structural and optical properties.

陽極115可為足夠導電性以輸送空穴至有機層之任何適當陽極。陽極115之材料較佳係具有功函數高於約4eV("高功函數材料")。較佳陽極材料包括導電性金屬氧化物,譬如氧化銦錫(ITO)與氧化銦鋅(IZO)、氧化鋁鋅(AlZnO)及金屬。陽極115(與基板110)可為足夠透明以產生底部發射裝置。較佳透明基板與陽極組合係為經沉積在玻璃或塑膠(基板)上之市購可得ITO(陽極)。可撓性與透明基板-陽極組合係被揭示於美國專利5,844,363與6,602,540 B2中,其係以全文併入供參考。陽極115可為不透明及/或反射性。反射陽極115對於一些頂部發射裝置可為較佳,以增加自裝置頂部所發射光線之量。陽極115之材料與厚度可經選擇,以獲得所要之導電性與光學性質。在陽極115為透明之情況下,對於足夠厚以提供所要導電性,而足夠薄以提供所要透明程度之特定材料,可以有一範圍之厚度。可使用其他陽極材料與結構。The anode 115 can be any suitable anode that is sufficiently conductive to transport holes to the organic layer. The material of the anode 115 preferably has a work function greater than about 4 eV ("high work function material"). Preferred anode materials include conductive metal oxides such as indium tin oxide (ITO) and indium zinc oxide (IZO), aluminum zinc oxide (AlZnO), and metals. The anode 115 (and the substrate 110) can be sufficiently transparent to create a bottom emitting device. Preferably, the transparent substrate and anode combination is a commercially available ITO (anode) deposited on glass or plastic (substrate). The flexible and transparent substrate-anode combination is disclosed in U.S. Patent Nos. 5,844,363 and 6,602,540 B2, the entireties of each of which are incorporated by reference. The anode 115 can be opaque and/or reflective. Reflective anode 115 may be preferred for some top emitting devices to increase the amount of light emitted from the top of the device. The material and thickness of the anode 115 can be selected to achieve the desired conductivity and optical properties. Where the anode 115 is transparent, it may have a range of thicknesses for a particular material that is thick enough to provide the desired conductivity and that is sufficiently thin to provide the desired degree of transparency. Other anode materials and structures can be used.

空穴輸送層125可包含能夠輸送空穴之材料。空穴輸送層130可為固有(未經摻雜)或經摻雜。摻雜作用可用以增強導電性。α-NPD與TPD係為固有空穴輸送層之實例。p-摻雜之空穴輸送層之實例,係為在50:1之莫耳比下,以F4 -TCNQ摻雜之m-MTDATA,如在頒予Forrest等人之美國專利申請案公報2002-0071963 A1中所揭示者,其係以全文併入供參考。可使用其他空穴輸送層。The hole transport layer 125 may comprise a material capable of transporting holes. The hole transport layer 130 can be inherent (undoped) or doped. Doping can be used to enhance conductivity. The α-NPD and TPD systems are examples of intrinsic hole transport layers. An example of a p-doped hole transport layer is m-MTDATA doped with F 4 -TCNQ at a molar ratio of 50:1, as disclosed in US Patent Application Publication No. 2002 to Forrest et al. -0071963 A1, which is incorporated by reference in its entirety. Other hole transport layers can be used.

發射層135可包含當電流通過陽極115與陰極160之間時能夠發射光線之有機材料。發射層135較佳係含有磷光發射材料,惟螢光發射材料亦可使用。磷光材料為較佳,因為與此種材料有關聯之較高發光效率。發射層135亦可包含或許能夠輸送電子及/或空穴之主體材料,被發射材料摻雜,該發射材料可捕獲電子、空穴及/或激發子,以致激發子係經由光發射機制自發射材料鬆弛。發射層135可包含合併輸送與發射性質之單一材料。不論發射材料為摻雜劑或主要成份,發射層135可包含其他材料,譬如會調整發射材料之發射之摻雜劑。發射層135可包含能夠以組合發射所要光譜之多種發射材料。磷光發射材料之實例包括Ir(ppy)3 。螢光發射材料之實例包括DCM與DMQA。主體材料之實例包括Alq3 、CBP及mCP。發射與主體材料之實例係揭示於頒予Thompson等人之美國專利6,303,238與美國專利申請案公報US-2004-0209116 A1中,其各係以全文併入供參考。發射材料可以多種方式被加入發射層135中。例如,發射小分子可被併入聚合體中。這可藉由數種方式達成:經由將小分子無論是以個別且不同分子物種摻雜至聚合體中;或經由將小分子併入聚合體之主鏈中,以形成共聚物;或經由將小分子以懸垂基團結合於聚合體上。可使用其他發射層材料與結構。例如,小分子發射材料可以樹枝狀體之核心存在。Emissive layer 135 can include an organic material that is capable of emitting light when current is passed between anode 115 and cathode 160. The emissive layer 135 preferably contains a phosphorescent emissive material, but a fluorescent emissive material can also be used. Phosphorescent materials are preferred because of the higher luminous efficiency associated with such materials. The emissive layer 135 may also comprise a host material that is capable of transporting electrons and/or holes, doped with an emissive material that traps electrons, holes, and/or excitons such that the exciton emits itself via a light emission mechanism. The material is slack. Emissive layer 135 can comprise a single material that combines transport and emission properties. Emission layer 135 may comprise other materials, such as dopants that modulate the emission of the emissive material, whether the emissive material is a dopant or a primary component. Emissive layer 135 can comprise a plurality of emissive materials capable of emitting a desired spectrum in combination. Examples of the phosphorescent emissive material include Ir(ppy) 3 . Examples of fluorescent emissive materials include DCM and DMQA. Examples of the host material include Alq 3 , CBP, and mCP. Examples of emissive and host materials are disclosed in U.S. Patent No. 6, 303, 238 to the disclosure of U.S. Pat. The emissive material can be added to the emissive layer 135 in a variety of ways. For example, a small emitting molecule can be incorporated into a polymer. This can be achieved in several ways: by doping small molecules into individual or different molecular species into the polymer; or by incorporating small molecules into the backbone of the polymer to form a copolymer; or via Small molecules bind to the polymer as pendant groups. Other emissive layer materials and structures can be used. For example, a small molecule emissive material can exist as the core of a dendrimer.

許多可使用之發射材料係包含一或多個結合至金屬中心之配位基。若配位基直接有助於有機金屬發射材料之光活性性質,則其可被稱為"光活性"。"光活性"配位基可搭配金屬提供能階,當光子被發射時,電子係自其且對其移動。其他配位基可被稱為"輔助"。輔助配位基可改變分子之光活性性質,例如藉由移轉光活性配位基之能階,但輔助配位基不會直接地提供涉及光線發射之能階。在一個分子中為光活性之配位基,可能在另一個中為輔助。光活性與輔助之此等定義係意欲作為非限制性理論。Many of the emissive materials that can be used contain one or more ligands bonded to the metal center. A ligand may be referred to as "photoactive" if it directly contributes to the photoactive nature of the organometallic emissive material. A "photoactive" ligand can be used in conjunction with a metal to provide an energy level from which the electrons move when a photon is emitted. Other ligands may be referred to as "auxiliary." Auxiliary ligands can alter the photoactive nature of the molecule, for example by shifting the energy level of the photoactive ligand, but the ancillary ligand does not directly provide an energy level involved in light emission. A photoactive ligand in one molecule may be auxiliary in the other. These definitions of photoactivity and assist are intended as non-limiting theories.

電子輸送層145可包含能夠輸送電子之材料。電子輸送層145可為固有(未經摻雜)或經摻雜。摻雜作用可用以增強導電性。Alq3 為固有電子輸送層之實例。n-摻雜之電子輸送層之實例,係為在1:1之莫耳比下,以Li摻雜之BPhen,如在頒予Forrest等人之美國專利申請案公報2002-0071963 A1中所揭示者,其係以全文併入供參考。可使用其他電子輸送層。Electron transport layer 145 can comprise a material that is capable of transporting electrons. Electron transport layer 145 can be inherent (undoped) or doped. Doping can be used to enhance conductivity. Alq 3 is an example of an intrinsic electron transport layer. An example of an n-doped electron transporting layer is a Li-doped BPhen at a molar ratio of 1:1, as disclosed in U.S. Patent Application Publication No. 2002-0071963 A1, to the name of They are incorporated by reference in their entirety. Other electron transport layers can be used.

電子輸送層之帶有電荷成份可經選擇,以致使電子可有效地自陰極注入至電子輸送層之LUMO(最低未佔有分子軌道)能階中。"帶有電荷成份"係為負責實際上輸送電子之LUMO能階之材料。此成份可為基層材料,或其可為摻雜劑。一般而言,有機材料LUMO能階之特徵可為該材料之電子親和力,且一般而言,陰極之相對電子注入效率,其特徵可以陰極材料之功函數為觀點。這意謂電子輸送層與相鄰陰極之較佳性質可以ETL之帶有電荷成份之電子親和力與陰極材料之功函數為觀點而指定。特定言之,為達成高電子注入效率,陰極材料之功函數較佳係不大於電子輸送層帶有電荷成份之電子親和力達超過約0.75eV,更佳係不超過約0.5eV。類似考量係適用於其中電子正被注入之任何層。The charged component of the electron transport layer can be selected such that electrons can be efficiently injected from the cathode into the LUMO (lowest unoccupied molecular orbital) energy level of the electron transport layer. The "charged component" is a material responsible for the LUMO energy level that actually transports electrons. This component can be a base material or it can be a dopant. In general, the LUMO energy level of the organic material can be characterized by the electron affinity of the material, and in general, the relative electron injection efficiency of the cathode can be characterized by the work function of the cathode material. This means that the preferred properties of the electron transport layer and the adjacent cathode can be specified from the viewpoint of the electron affinity of the charged component of the ETL and the work function of the cathode material. In particular, in order to achieve high electron injection efficiency, the work function of the cathode material is preferably no more than about 0.75 eV, more preferably no more than about 0.5 eV, of the charge component of the electron transport layer. Similar considerations apply to any layer in which electrons are being injected.

陰極160可為此項技藝已知之任何適當材料或材料之組合,以致陰極160係能夠傳導電子,且將彼等注入裝置100之有機層中。陰極160可為透明或不透明,且可為反射性。金屬與金屬氧化物為適當陰極材料之實例。陰極160可為單層,或可具有複合結構。圖1顯示具有薄金屬層162與較厚導電性金屬氧化物層164之複合陰極160。在複合陰極中,關於較厚層164之較佳材料包括ITO、IZO及此項技藝已知之其他材料。美國專利案號5,703,436,5,707,745,6,548,956 B2及6,576,134 B2,其係以全文併入供參考,係揭示陰極之實例,包括複合陰極,具有一個金屬薄層,譬如Mg:Ag,與覆蓋在其上之透明導電性濺射沉積之ITO層。與其下方有機層接觸之陰極160部份,不論其是否為單層陰極160,複合陰極之薄金屬層162或一些其他配件,較佳係由具有功函數低於約4eV之材料("低功函數材料")製成。可使用其他陰極材料與結構。Cathode 160 can be any suitable material or combination of materials known in the art such that cathode 160 is capable of conducting electrons and injecting them into the organic layer of device 100. Cathode 160 can be transparent or opaque and can be reflective. Metals and metal oxides are examples of suitable cathode materials. Cathode 160 can be a single layer or can have a composite structure. 1 shows a composite cathode 160 having a thin metal layer 162 and a thicker conductive metal oxide layer 164. Among the composite cathodes, preferred materials for the thicker layer 164 include ITO, IZO, and other materials known in the art. U.S. Patent Nos. 5,703,436, 5, 707, 745, 6, 548, 956 B2 and 6, 576, 134 B2, incorporated herein by reference inco Transparent conductive sputter deposited ITO layer. The portion of the cathode 160 that is in contact with the underlying organic layer, whether or not it is a single layer cathode 160, the thin metal layer 162 of the composite cathode or some other component, is preferably a material having a work function of less than about 4 eV ("low work function" Made of material"). Other cathode materials and structures can be used.

阻斷層可用以降低離開發射層之電荷載流子(電子或空穴)及/或激發子之數目。電子阻斷層130可經配置在發射層135與空穴輸送層125之間,以阻斷電子在空穴輸送層125之方向上離開發射層135。同樣地,空穴阻斷層140可經配置在發射層135與電子輸送層145之間,以阻斷空穴在電子輸送層145之方向上離開發射層135。阻斷層亦可用以阻斷激發子擴散離開發射層。阻斷層之理論與用途係更詳細地描述於美國專利案號6,097,147與頒予Forrest等人之美國專利申請案公報2002-0071963 A1中,其係以全文併入供參考。A blocking layer can be used to reduce the number of charge carriers (electrons or holes) and/or excitons exiting the emissive layer. The electron blocking layer 130 may be disposed between the emission layer 135 and the hole transport layer 125 to block electrons from leaving the emission layer 135 in the direction of the hole transport layer 125. Likewise, the hole blocking layer 140 may be disposed between the emissive layer 135 and the electron transport layer 145 to block holes from exiting the emissive layer 135 in the direction of the electron transport layer 145. The blocking layer can also be used to block the diffusion of the excitons away from the emissive layer. The theory and use of the barrier layer is described in more detail in U.S. Patent No. 6,097,147, issued to U.S. Pat.

當於本文中使用時,且如熟諳此藝者所明瞭,"阻斷層"一詞係意謂該層提供會顯著地抑制電荷載流子及/或激發子經過裝置輸送之障壁,而非指出該層必定完全阻斷電荷載流子及/或激發子。當與缺乏阻斷層之類似裝置比較時,此種阻斷層之存在於裝置中可造成實質上較高效率。阻斷層亦可用以限制發射至所要之OLED區域。As used herein, and as understood by those skilled in the art, the term "blocking layer" means that the layer provides a barrier that significantly inhibits the transport of charge carriers and/or excitons through the device, rather than It is pointed out that this layer must completely block charge carriers and/or excitons. The presence of such a barrier layer in the device can result in substantially higher efficiency when compared to similar devices lacking a barrier layer. The blocking layer can also be used to limit emission to the desired OLED region.

一般而言,注入層係包含可改良電荷載流子自一層(譬如電極或有機層)之注入至相鄰有機層中之材料。注入層亦可進行電荷輸送功能。在裝置100中,空穴注入層120可為會改良空穴自陽極115之注入至空穴輸送層125中之任何層。CuPc為可作為空穴注入層使用之材料之實例,自ITO陽極115及其他陽極。在裝置100中,電子注入層150可為會改良電子之注入電子輸送層145中之任何層。LiF/Al為可作為電子注入層使用之材料之實例,自相鄰層至電子輸送層。其他材料或材料之組合可用於注入層。依特定裝置之型態而定,注入層可經配置在不同於裝置100中所示之位置上。注入層之更多實例係提供於頒予Lu等人之美國專利申請案序號09/931,948中,其係以全文併入供參考。空穴注入層可包含溶液沉積之材料,譬如旋轉塗覆聚合體,例如PEDOT:PSS,或其可為蒸氣沉積小分子材料,例如CuPc或MTDATA。In general, the implant layer comprises a material that improves the injection of charge carriers from a layer, such as an electrode or an organic layer, into an adjacent organic layer. The injection layer can also perform a charge transport function. In device 100, hole injection layer 120 can be any layer that will improve the injection of holes from anode 115 into hole transport layer 125. CuPc is an example of a material that can be used as a hole injection layer, from the ITO anode 115 and other anodes. In device 100, electron injection layer 150 can be any layer of the injected electron transport layer 145 that will improve electrons. LiF/Al is an example of a material that can be used as an electron injecting layer, from an adjacent layer to an electron transporting layer. Other materials or combinations of materials can be used for the injection layer. Depending on the type of device, the injection layer can be configured at a different location than that shown in device 100. Further examples of the injection layer are provided in U.S. Patent Application Ser. The hole injection layer may comprise a solution deposited material, such as a spin-on polymer, such as PEDOT:PSS, or it may be a vapor deposited small molecule material such as CuPc or MTDATA.

空穴注入層(HIL)可使陽極表面平面化或潤濕,以提供自陽極之有效空穴注入至空穴注入材料中。空穴注入層亦可具有帶有電荷之成份,其具有HOMO(最高佔有分子軌道)能階,其係如藉由其本文所述相對電離電位(IP)能量所定義,有利地與HIL之一個側面上之相鄰陽極層,及HIL之相反側面上之空穴輸送層相配。"帶有電荷成份"為負責實際上輸送空穴之HOMO能階之材料。此成份可為HIL之基層材料,或其可為摻雜劑。使用經摻雜之HIL係允許摻雜劑針對其電性質經選擇,及主體係針對形態學性質經選擇,譬如潤濕、撓性、韌性等。關於HIL材料之較佳性質係致使空穴可有效地自陽極注入HIL材料中。特定言之,HIL之帶有電荷成份較佳係具有IP大於陽極材料之IP不超過約0.7eV。帶有電荷成份更佳係具有IP大於陽極材料不超過約0.5eV。類似考量係適用於空穴正被注入之任何層。HIL材料係進一步與習用空穴輸送材料區別,其典型上係使用於OLED之空穴輸送層中,因為此種HIL材料可具有空穴傳導性實質上低於習用空穴輸送材料之空穴傳導性。本發明HIL之厚度可為足夠厚以幫助使陽極層之表面平面化或潤濕。例如,低達10毫微米之HIL厚度可為極平滑陽極表面所接受。但是,由於陽極表面傾向於極粗糙,故至高50毫微米之HIL厚度在一些情況中可為所想要的。A hole injection layer (HIL) can planarize or wet the anode surface to provide effective hole injection from the anode into the hole injection material. The hole injection layer may also have a charge-bearing component having a HOMO (highest occupied molecular orbital) energy level, as defined by its relative ionization potential (IP) energy as described herein, advantageously with one of the HILs. Adjacent anode layers on the sides, and hole transport layers on opposite sides of the HIL match. The "charged component" is the material responsible for the HOMO energy level that actually transports holes. This component can be a base material for the HIL, or it can be a dopant. The use of a doped HIL system allows the dopant to be selected for its electrical properties, and the host system is selected for morphological properties such as wetting, flexibility, toughness, and the like. A preferred property with respect to the HIL material is that voids can be effectively injected into the HIL material from the anode. In particular, the charged component of the HIL preferably has an IP greater than the IP of the anode material of no more than about 0.7 eV. More preferably, the charge component has an IP greater than the anode material of no more than about 0.5 eV. Similar considerations apply to any layer in which holes are being injected. The HIL material is further distinguished from conventional hole transport materials, which are typically used in the hole transport layer of OLEDs because such HIL materials can have hole conductance substantially lower than that of conventional hole transport materials. Sex. The thickness of the HIL of the present invention can be thick enough to help planarize or wet the surface of the anode layer. For example, a HIL thickness as low as 10 nanometers is acceptable for very smooth anode surfaces. However, since the anode surface tends to be extremely rough, a HIL thickness of up to 50 nm may be desirable in some cases.

保護層可用以在後續製程期間保護其下方層。例如,用以製造金屬或金屬氧化物頂部電極之方法可傷害有機層,而保護層可用以降低或消除此種傷害。在裝置100中,保護層155可在陰極160之製造期間降低對其下方有機層之傷害。保護層較佳係具有關於其輸送之載流子(在裝置100中之電子)類型之高載流子遷移率,以致其不會顯著地增加裝置100之操作電壓。CuPc、BCP及各種金屬苯二甲藍素係為可用於保護層中之材料之實例。可使用其他材料或材料之組合。保護層155之厚度較佳係足夠厚以致對其下方層只有極少或無傷害,此係由於製程係在有機保護層160被沉積後發生所致,然而並非如此厚以致顯著地增加裝置100之操作電壓。保護層155可經摻雜以增加其導電性。例如,CuPc或BCP保護層160可以Li摻雜。保護層之更詳細描述可參閱頒予Lu等人之美國專利申請案序號09/931,948,其係以全文併入供參考。The protective layer can be used to protect the underlying layers during subsequent processing. For example, the method used to make the metal or metal oxide top electrode can damage the organic layer, and the protective layer can be used to reduce or eliminate such damage. In device 100, protective layer 155 can reduce damage to the underlying organic layer during fabrication of cathode 160. The protective layer preferably has a high carrier mobility with respect to the type of carrier (electrons in device 100) it transports such that it does not significantly increase the operating voltage of device 100. CuPc, BCP and various metal phthalocyanines are examples of materials that can be used in the protective layer. Other materials or combinations of materials can be used. The thickness of the protective layer 155 is preferably sufficiently thick that there is little or no damage to the underlying layer due to the process occurring after the organic protective layer 160 is deposited, but not so thick as to significantly increase the operation of the device 100. Voltage. The protective layer 155 can be doped to increase its conductivity. For example, the CuPc or BCP protective layer 160 may be doped with Li. A more detailed description of the protective layer can be found in U.S. Patent Application Serial No. 09/931,948, the entire entire disclosure of which is incorporated herein by reference.

圖2顯示倒置之OLED 200。此裝置包含基板210、陰極215、發射層220、空穴輸送層225及陽極230。裝置200可藉由按順序沉積所述之層而製成。由於最常見之OLED型態係具有陰極,經配置於陽極上方,而裝置200係具有陰極215,經配置於陽極230下方,故裝置200可被稱為"倒置"OLED。類似關於裝置100所述之材料可被使用於裝置200之相應層中。圖2係提供一些層如何可自裝置100之結構省略之一項實例。Figure 2 shows the inverted OLED 200. The device includes a substrate 210, a cathode 215, an emissive layer 220, a hole transport layer 225, and an anode 230. Device 200 can be fabricated by depositing the layers in sequence. Since the most common OLED type has a cathode disposed above the anode and the device 200 has a cathode 215 disposed below the anode 230, the device 200 can be referred to as an "inverted" OLED. Materials similar to those described for device 100 can be used in corresponding layers of device 200. FIG. 2 is an example of how some layers may be omitted from the structure of device 100.

圖1與2中所示之簡單層合結構係以非限制性實例方式提供,且應明瞭的是,本發明之具體實施例可伴隨著極多種其他結構一起使用。所述之特定材料與結構係為舉例性質,且可使用其他材料與結構。功能性OLED可經由以不同方式合併所述之各種層而達成,或可完全省略一些層,以設計、性能及成本因素為基礎。亦可加入其他未被明確地描述之層。可使用此等經明確描述者以外之材料。雖然本文中所提供之許多實例係描述各種層為包含單一材料,但應明瞭的是,可使用材料之組合,譬如主體與摻雜劑之混合物,或更一般性地為混合物。層亦可具有各種亞層。對本文中各種層所給予之名稱並非意欲成為嚴格限制。例如,在裝置200中,空穴輸送層225係輸送空穴,且注入空穴至發射層220中,而可被描述為空穴輸送層或空穴注入層。於一項具體實施例中,OLED可被描述為具有"有機層",經配置在陰極與陽極之間。此有機層可包含單層,或可進一步包含多層如所述之不同有機材料,例如關於圖1與2。The simple laminated structure illustrated in Figures 1 and 2 is provided by way of non-limiting example, and it is to be understood that the specific embodiments of the present invention can be used with a wide variety of other structures. The particular materials and structures described are exemplary in nature and other materials and structures may be used. Functional OLEDs may be achieved by combining the various layers described in different ways, or some layers may be omitted altogether, based on design, performance, and cost factors. Other layers that are not explicitly described may also be added. Materials other than those specifically described may be used. While many of the examples provided herein describe various layers as comprising a single material, it should be understood that combinations of materials can be used, such as a mixture of host and dopant, or more generally a mixture. The layers can also have various sub-layers. The names given to the various layers herein are not intended to be strictly limiting. For example, in device 200, hole transport layer 225 transports holes and injects holes into emissive layer 220, which may be described as a hole transport layer or a hole injection layer. In a specific embodiment, an OLED can be described as having an "organic layer" disposed between a cathode and an anode. This organic layer may comprise a single layer or may further comprise multiple layers of different organic materials as described, for example with respect to Figures 1 and 2.

未被明確地描述之結構與材料亦可使用,譬如由聚合材料(PLED)所組成之OLED,譬如於Friend等人之美國專利5,247,190中所揭示者,其係以全文併入供參考。作為進一步實例,可使用具有單一有機層之OLED。OLED可經堆積,例如在頒予Forrest等人之美國專利5,707,745中所述者,其係以全文併入供參考。OLED結構可偏離圖1與2中所示之簡單層合結構。例如,基板可包含有角度反射表面,以改良外聯結,譬如在頒予Forrest等人之美國專利6,091,195中所述之平台結構,及/或在頒予Bulovic等人之美國專利5,834,893中所述之凹坑結構,其係以全文併入供參考。Structures and materials that are not explicitly described may also be used, such as OLEDs composed of a polymeric material (PLED), as disclosed in U.S. Patent No. 5,247,190, issued to s. As a further example, an OLED having a single organic layer can be used. The OLEDs can be stacked, for example, as described in U.S. Patent No. 5,707,745, the entire disclosure of which is incorporated herein by reference. The OLED structure can deviate from the simple laminate structure shown in Figures 1 and 2. For example, the substrate can include an angled reflective surface to improve the outer structure, such as the platform structure described in U.S. Patent No. 6,091,195, the entire disclosure of which is incorporated herein by reference. The pit structure is incorporated by reference in its entirety.

除非另有指明,否則各種具體實施例之任何層可藉任何適當方法沉積。對於有機層,較佳方法包括熱蒸發,噴墨,譬如在美國專利案號6,013,982與6,087,196中所述者,其係以全文併入供參考,有機氣相沉積(OVPD),譬如在頒予Forrest等人之美國專利6,337,102中所述者,其係以全文併入供參考,及藉由有機蒸氣噴射印刷(OVJP)沉積,譬如在美國專利申請案號10/233,470中所述者,其係以全文併入供參考。其他適當沉積方法包括旋轉塗覆及其他溶液為基礎之方法。溶液為基礎之方法較佳係在氮或惰性大氣中進行。對於其他層,較佳方法包括熱蒸發。較佳構圖方法包括經過罩蓋沉積,冷焊,譬如在美國專利案號6,294,398與6,468,819中所述者,其係以全文併入供參考,及與一些沉積方法譬如噴墨與OVJD有關聯之構圖。其他方法亦可使用。欲被沉積之材料可經改質,以使得彼等可與特定沉積方法相容。例如,取代基,譬如烷基與芳基,分枝或未分枝,且較佳係含有至少3個碳,可被使用於小分子中,以增強其進行溶液處理之能力。可使用具有20個碳或更多個之取代基,而3-20個碳為較佳範圍。具不對稱結構之材料可具有比具對稱性結構者較佳之溶液加工性,因為不對稱材料可具有較低再結晶傾向。樹枝狀體取代基可用以增強小分子進行溶液處理之能力。Any of the various embodiments may be deposited by any suitable method unless otherwise indicated. For organic layers, the preferred methods include thermal evaporation, ink jetting, as described in U.S. Patent Nos. 6,013,982 and 6,087,196, the entireties of each of each of each of And U.S. Patent No. 6,337,102, the disclosure of which is incorporated herein by reference in its entirety in the entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire The full text is incorporated by reference. Other suitable deposition methods include spin coating and other solution based methods. The solution based process is preferably carried out in nitrogen or an inert atmosphere. For other layers, preferred methods include thermal evaporation. The preferred patterning method includes the deposition of a cap, and the like, as described in U.S. Patent Nos. 6,294,398 and 6,468,819, the entireties of each of which are incorporated by reference in their entirety in the entire entire entire entire entire entire entire entire entire disclosure . Other methods can also be used. The materials to be deposited may be modified so that they are compatible with the particular deposition process. For example, substituents, such as alkyl and aryl groups, branched or unbranched, and preferably containing at least 3 carbons, can be used in small molecules to enhance their ability to be solution treated. A substituent having 20 carbons or more may be used, and 3 to 20 carbons are preferred. Materials having an asymmetrical structure may have better solution processability than those having a symmetrical structure because asymmetric materials may have a lower tendency to recrystallize. Dendrimer substituents can be used to enhance the ability of small molecules to undergo solution processing.

於本文中所揭示之分子可在未偏離本發明之範圍下,以多種不同方式取代。例如,取代基可被添加至具有兩個或多個單-、雙-及/或三叉配位基之化合物中,以致在添加該取代基後,單-、雙-及/或三叉配位基之一或多個係被連結在一起,以形成例如四叉或六叉配位基。可形成其他此種鏈結。咸信相對於未具有連結之類似化合物,此類型之連結可增加安定性,此係由於此項技藝中所一般明瞭為"螯合作用"者所致。The molecules disclosed herein may be substituted in a number of different ways without departing from the scope of the invention. For example, a substituent may be added to a compound having two or more mono-, di-, and/or tridentate ligands such that after the addition of the substituent, a mono-, bi-, and/or tridentate ligand One or more of the lines are joined together to form, for example, a tetra- or hexa-ligand. Other such links can be formed. This type of linkage may increase stability relative to similar compounds that do not have linkages, as is generally recognized by the art as "chelating".

根據本發明具體實施例所製造之裝置可被併入極多種消費產品中,包括平板顯示器、電腦監視器、電視、廣告牌、用於內部或外部照明及/或發出信號之光線、頭上顯示器、完全透明顯示器、可撓性顯示器、雷射印表機、電話、手機、個人數字輔助器(PDA)、膝上型電腦、數位照像機、攝像機-錄像機組合裝置、取景器、顯微顯示器、交通工具、大面積壁、電影院或體育館螢幕或標誌。各種控制機制可用以控制根據本發明所製造之裝置,包括被動基質與主動基質。許多裝置係欲供使用於對人類舒適之溫度範圍內,譬如18℃至30℃,而更佳係在室溫(20-25℃)下。Devices made in accordance with embodiments of the present invention can be incorporated into a wide variety of consumer products, including flat panel displays, computer monitors, televisions, billboards, light for internal or external illumination and/or signaling, on-head displays, Fully transparent display, flexible display, laser printer, telephone, mobile phone, personal digital assistant (PDA), laptop, digital camera, camera-recorder combination, viewfinder, microdisplay, Vehicles, large wall, cinema or stadium screen or sign. Various control mechanisms can be used to control the devices made in accordance with the present invention, including passive substrates and active substrates. Many devices are intended for use in a temperature range that is comfortable for humans, such as 18 ° C to 30 ° C, and more preferably at room temperature (20-25 ° C).

本文中所述之材料與結構可具有OLED以外裝置上之應用。例如,其他光電裝置,譬如有機太陽能電池與有機光檢測器,可採用此材料與結構。更一般而言,有機裝置,譬如有機電晶體,可採用此材料與結構。The materials and structures described herein can have applications on devices other than OLEDs. For example, other optoelectronic devices, such as organic solar cells and organic photodetectors, may employ such materials and structures. More generally, organic materials, such as organic transistors, may be employed in this material and structure.

本發明係針對具有包含磷光有機金屬發射材料之發射層之裝置,該材料具有經過至少一個碳-金屬鍵結合至金屬中心之至少一個三叉配位基。金屬中心係選自第二與第三列過渡金屬,且較佳係選自Ru、Os、Re、Rh、Ir、Pd及Pt。於特佳具體實施例中,M係選自Os與Ru,而於又更佳具體實施例中,M為Os。發射材料可另外含有輔助配位基,以充填金屬中心之配位球體。於一項較佳具體實施例中,發射材料包含兩個結合至金屬中心之三叉配位基,其可為相同或不同,其中至少一個三叉配位基具有碳-金屬鍵。在一項特佳具體實施例中,金屬中心為鋨。此裝置可含有其他發射材料,其可為磷光發射材料或螢光發射材料。The present invention is directed to a device having an emissive layer comprising a phosphorescent organometallic emissive material having at least one tridentate ligand bonded to a metal center via at least one carbon-metal bond. The metal center is selected from the second and third columns of transition metals, and is preferably selected from the group consisting of Ru, Os, Re, Rh, Ir, Pd, and Pt. In a particular embodiment, M is selected from the group consisting of Os and Ru, and in still more preferred embodiments, M is Os. The emissive material may additionally contain an auxiliary ligand to fill the coordination sphere of the metal center. In a preferred embodiment, the emissive material comprises two tridentate ligands bonded to a metal center, which may be the same or different, wherein at least one of the tridentate ligands has a carbon-metal bond. In a particularly preferred embodiment, the metal center is tantalum. This device may contain other emissive materials, which may be phosphorescent emissive materials or fluorescent emissive materials.

在本發明之一項較佳具體實施例中,對發射材料之三叉配位基之碳-金屬鍵為碳烯-金屬鍵。因此,在此項具體實施例中,發射材料包含經過至少一個碳烯-金屬鍵結合至金屬中心之至少一個三叉配位基。對金屬中心之兩個其他鍵結可選自(i)得自選自N、O、S及P之雜原子之配價鍵,(ii)不為碳烯-金屬鍵之碳-金屬鍵,(iii)碳烯-金屬鍵,或其任何組合。In a preferred embodiment of the invention, the carbon-metal bond to the tridentate ligand of the emissive material is a carbene-metal bond. Thus, in this particular embodiment, the emissive material comprises at least one tridentate ligand bonded to the metal center via at least one carbene-metal bond. The two other bonds to the metal center may be selected from (i) a coordinate bond derived from a hetero atom selected from N, O, S, and P, and (ii) a carbon-metal bond not being a carbene-metal bond, ( Iii) a carbene-metal bond, or any combination thereof.

於本文中使用之"碳烯"一詞係指具有二價碳原子之化合物,當未被配位至金屬時,該碳原子僅具有六個電子在其價電子層中。測定配位基是否包含碳烯-金屬鍵之可用運動係為精神上解構複合物成為金屬片段與配位基。然後,測定在先前結合至金屬之配位基中之碳原子是否為呈解構狀態之中性二價碳原子。較佳具體實施例之共振形式可被顯示為:The term "carbene" as used herein refers to a compound having a divalent carbon atom which, when not coordinated to a metal, has only six electrons in its valence electron layer. The available motion system for determining whether the ligand contains a carbene-metal bond is a mentally decomposed complex into a metal segment and a ligand. Then, it is determined whether the carbon atom in the ligand previously bound to the metal is a neutral divalent carbon atom in a destructed state. The resonant form of the preferred embodiment can be displayed as:

此碳烯定義並不限於合成自碳烯類之金屬-碳烯複合物,而是意欲著重與結合至金屬之碳原子有關聯之軌道結構與電子分佈。此定義係認可"碳烯"當結合至金屬時於技術上可不為二價,但若其自金屬脫離,則其為二價。雖然許多此種化合物係經由首先合成碳烯,然後使其結合至金屬合成而得,但此定義係意欲涵蓋藉由其他方法合成而具有類似軌道結構與電子組態之化合物。Lowry與Richardson,有機化學上之機制與理論 256(Harper與Row,1976)係以一種與此術語被使用於本文中之方式一致之方式定義"碳烯"。一些參考資料可能將"碳烯"定義為會對金屬形成雙鍵之碳配位基。雖然此定義不被使用於本申請案中,但在此兩種定義中可能有一部份重疊。多種表示圖係用以描繪在此種碳烯類中之鍵結,包括其中彎曲線係用以表示在碳烯碳與相鄰雜原子間之部份多重鍵結。This carbene definition is not limited to metal-carbene complexes synthesized from carbenes, but is intended to focus on orbital structures and electron distributions associated with carbon atoms bonded to metals. This definition recognizes that "carbene" is technically not bivalent when incorporated into a metal, but is bivalent if it is detached from the metal. While many such compounds are obtained by first synthesizing a carbene and then combining it to a metal synthesis, this definition is intended to encompass compounds having similar orbital structures and electronic configurations synthesized by other methods. Lowry and Richardson, Mechanisms and Theory of Organic Chemistry 256 (Harper and Row, 1976) define "carbene" in a manner consistent with the manner in which this term is used herein. Some references may define "carbene" as a carbon ligand that forms a double bond to a metal. Although this definition is not used in this application, there may be some overlap between the two definitions. A variety of representations are used to characterize linkages in such carbenes, including where curved lines are used to indicate partial multiple bonds between carbene carbon and adjacent heteroatoms.

碳烯配位基為OLED應用中特別需要的,此係因藉由金屬-碳烯複合物所顯示之高熱安定性所致。咸信碳烯,其表現得幾乎如電子供給基團,通常會強力地結合至金屬,因此形成比例如作為磷光發射體使用之先前環金屬化複合物較具熱安定性之複合物。Carboolefin ligands are particularly desirable in OLED applications due to the high thermal stability exhibited by the metal-carbene complexes. The hexacarbene, which behaves almost like an electron-donating group, typically binds strongly to the metal, thus forming a composite that is more thermally stable than, for example, the previous cyclometallated composite used as a phosphorescent emitter.

再者,由於碳烯-金屬鍵之性質,故咸信包含碳烯-金屬鍵之發射分子可具有增加之安定性,例如在與為非碳烯類似物之化合物比較下。進一步認為包含碳烯-金屬鍵之分子之發射光譜,可與未具有碳烯之類似物之發射光譜不同。Furthermore, due to the nature of the carbene-metal bond, the emission molecule comprising a carbene-metal bond can have increased stability, for example, in comparison to a compound that is a non-carbene analog. It is further believed that the emission spectrum of a molecule containing a carbene-metal bond may be different from that of an analog having no carbene.

金屬-碳烯複合物可經調整,以藉由配位基上之取代基及/或化學基團之選擇,自近紫外光發射極多種光譜,越過整個可見光譜。更重要地,現在可獲得具有吸收峰波長在約450毫微米下之飽和藍色發射。由於咸認藉由調整發射化合物,實質上較容易降低勝過增加三重態能量,故在此種高能量下製造安定藍色發射體之能力亦允許藉由降低能量以使發射進行紅位移,而獲得任何顏色之可能性。The metal-carbene complex can be tailored to emit a plurality of spectra from the near-ultraviolet light across the entire visible spectrum by the choice of substituents and/or chemical groups on the ligand. More importantly, saturated blue emission with an absorption peak wavelength of about 450 nm is now available. Since salty recognition is substantially easier to reduce than increasing triplet energy by adjusting the emissive compound, the ability to fabricate a stable blue emitter at such high energies also allows red shifting of the emission by reducing energy. The possibility of getting any color.

經連接至碳烯配位基之取代基及/或化學基團之適當選擇,亦可使與增加溫度有關聯之量子效率損失降至最低。咸認在室溫下與在低溫下(例如77K)發射間之壽命度量中之可觀察差異,係歸因於與磷光發射競爭之非放射性淬滅機制。進一步認為此種淬滅機制係以熱方式經活化,因此在約77K之較冷溫度下,其中由於淬滅所致之能量損耗不為一項問題,量子效率為約100%。咸信在碳烯配位基上之適當取代基,或在較剛性基質中之摻雜作用,譬如於Turro,"現代分子光化學",大學科學圖書公司(1991),109-10中所揭示者,可於室溫下增加量子效率,且相應地顯示較長壽命。The appropriate selection of substituents and/or chemical groups attached to the carbene ligand can also minimize quantum efficiency losses associated with increased temperature. The observable difference in the lifetime metric between room temperature and emission at low temperatures (e.g., 77K) is due to the non-radioactive quenching mechanism that competes with phosphorescence. It is further believed that this quenching mechanism is thermally activated, so that at a relatively cold temperature of about 77 K, the energy loss due to quenching is not a problem, and the quantum efficiency is about 100%. Suitable substituents on carbene ligands, or doping in relatively rigid matrices, as described in Turro, "Modern Molecular Photochemistry", University Science Books, Inc. (1991), 109-10 The quantum efficiency can be increased at room temperature and correspondingly shows a longer lifetime.

在一些具體實施例中,碳烯複合物之三重態能量係具有於光譜之深藍或紫外光(UV)部份中之相應波長。在一些具體實施例中,磷光發射化合物具有相應於小於450毫微米波長之三重態能量。在較佳具體實施例中,三重態能量係相應於小於440毫微米之波長,而在又更佳具體實施例中,其係相應於波長小於400毫微米,咸認其係在光譜之UV區域中,因為咸信400毫微米係表示光譜之UV與可見區域間之截止值。此種高三重態能量可使得此等化合物可使用於光學上向下泵送轉化層。關於此種應用,重疊較佳係在紫外光碳烯化合物之發射光譜與向下轉化層之吸收光譜之間。咸信當關於裝置之正規化電致發光之光譜曲線整體之約50%係在波長小於約450毫微米下時,有足夠能量於光學上泵送向下轉化層。大於90%之發射更佳係在低於440毫微米下產生,如本文中所揭示。關於正規化電致發光光譜曲線整體之50%較佳係低於約440毫微米,而更佳,其係低於約400毫微米。上文所提及之波長截止頻並非意欲成為絕對限制,因其係依欲被泵送之材料能量而定。咸認此等發射亦可在室溫下發生。In some embodiments, the triplet energy of the carbene complex has a corresponding wavelength in the dark blue or ultraviolet (UV) portion of the spectrum. In some embodiments, the phosphorescent emissive compound has a triplet energy corresponding to a wavelength of less than 450 nanometers. In a preferred embodiment, the triplet energy system corresponds to a wavelength of less than 440 nanometers, and in still more preferred embodiments, it corresponds to a wavelength of less than 400 nanometers, which is believed to be in the UV region of the spectrum. Medium, because the salt letter 400 nm represents the cutoff between the UV and visible regions of the spectrum. This high triplet energy allows these compounds to be used to optically pump down the conversion layer. For such applications, the overlap is preferably between the emission spectrum of the ultraviolet carbene compound and the absorption spectrum of the down conversion layer. When about 50% of the overall spectral curve of the normalized electroluminescence of the device is at a wavelength of less than about 450 nm, there is sufficient energy to optically pump the down conversion layer. More than 90% of the emission is better produced below 440 nm, as disclosed herein. Preferably, 50% of the normalized electroluminescence spectral curve is less than about 440 nanometers, and more preferably less than about 400 nanometers. The wavelength cutoff frequency mentioned above is not intended to be an absolute limitation as it depends on the energy of the material to be pumped. It is believed that such emissions can also occur at room temperature.

咸認強金屬-碳鍵亦會在金屬碳烯複合物中導致較大旋轉-軌道偶合。再者,經配位碳烯類之三重態能量係經証實顯著地高於吡啶類似物。甚至在室溫下,此發射可在光譜之近紫外光範圍內。此處咸信金屬碳烯複合物或許能夠在同樣高能量下發射,此係由於與碳烯配位基結合之強金屬-配位基鍵結所致。Salty strong metal-carbon bonds also cause large rotational-orbital coupling in the metal carbene composite. Furthermore, the triplet energy of the coordinated carbenes was confirmed to be significantly higher than the pyridine analog. Even at room temperature, this emission can be in the near ultraviolet range of the spectrum. Here, the Xianxin metal carbene complex may be able to emit at the same high energy due to strong metal-ligand bonding with the carbene ligand.

金屬-碳烯複合物之安定性亦可允許在OLED中可作為磷光發射體使用之配位基與金屬之類型上增加易變性。強金屬-碳烯鍵可允許多種金屬形成具有碳烯配位基之可使用磷光複合物,以獲得新穎發射化合物。The stability of the metal-carbene complex can also allow for increased susceptibility to the type of ligand and metal that can be used as a phosphorescent emitter in an OLED. Strong metal-carbene linkages can allow a variety of metals to form useful phosphorescent composites having carbene ligands to achieve novel emissive compounds.

本發明之發射材料係包含作為光活性配位基之三叉配位基。配位基係被稱為"光活性",因咸認其係有助於發射材料之光活性性質。發射材料可進一步包含輔助配位基。此等配位基係被稱為"輔助",因咸認其可改變分子之光活性性質,與直接地有助於光活性性質不同。光活性與輔助之定義係意欲作為非限制性理論。輔助配位基可選自下列參考資料中所揭示者:The emissive material of the present invention comprises a tridentate ligand as a photoactive ligand. The ligand system is referred to as "photoactive" and is believed to contribute to the photoactive nature of the emissive material. The emissive material can further comprise an auxiliary ligand. These coordination groups are referred to as "auxiliaries" because they recognize the photoactive nature of the molecule and directly contribute to the photoactive properties. The definition of photoactivity and aid is intended as a non-limiting theory. The ancillary ligands can be selected from those disclosed in the following references:

美國專利申請案公報2002-0034656(K&K 10020/15303),圖11-50,美國專利申請案公報2003-0072964(Thompson等人),段落7-132;及圖1-8;美國專利申請案公報2002-0182441(Lamansky等人),段落13-165,包括圖1-9(g);美國專利6,420,057 B1(Ueda等人),第1欄第57行至第88欄第17行,包括各化合物I-1至XXIV-12;美國專利6,383,666 B1(Kim等人),第2欄第9行至第21欄第67行;美國專利申請案公報2001-0015432 A1(Igarashi等人),段落2-57,包括化合物(1-1)至(1-30);美國專利申請案公報2001-0019782 A1(Igarashi等人),段落13-126,包括化合物(1-1)至(1-70)及(2-1)至(2-20);美國專利申請案公報2002-0024293(Igarashi等人),段落7-95,包括通式K-I至K-VI及實例化合物(K-1)至(K-25);美國專利申請案公報2002-0048689 A1(Igarashi等人),段落5-134,包括化合物1-81及實例化合物(1-1)至(1-81);美國專利申請案公報2002-0063516(Tsuboyama等人),段落31-161,包括各化合物1-16;美國專利申請案公報2003-0068536(Tsuboyama等人),段落31-168,包括表1-17中之各化合物,相當於EP-1-239-526-A2;美國專利申請案公報2003-0091862(Tokito等人),段落10-190,包括表1-17中之各化合物,相當於EP-1-239-526-A2;美國專利申請案公報2003-0096138(Lecloux等人),段落8-124,包括圖1-5;美國專利申請案公報2002-0190250(Grushin等人),段落9-191;美國專利申請案公報2002-0121638(Grushin等人),段落8-125;美國專利申請案公報2003-0068526(Kamatani等人),段落33-572,包括表1-23中之各化合物;美國專利申請案公報2003-0141809(Furugori等人),段落29-207;美國專利申請案公報2003-0162299 A1(Hsieh等人),段落8-42;WO 03/084972(Stossel等人),實例1-33;WO 02/02714 A2((Petrov等人),第2-30頁,包括表1-5中之各化合物;EP 1-191-613 A1(Takiguchi等人),段落26-87,包括表1-8中之各化合物(相當於美國專利申請案公報2002-0064681);及EP 1-191-614 A2(Tsuboyarna等人),段落25-86,包括表1-7中之各化合物;其係以全文併於本文供參考。U.S. Patent Application Publication No. 2002-0034656 (K&K 10020/15303), Figure 11-50, U.S. Patent Application Publication No. 2003-0072964 (Thompson et al.), paragraphs 7-132; and Figures 1-8; U.S. Patent Application Publication 2002-0182441 (Lamansky et al.), paragraphs 13-165, including Figures 1-9(g); U.S. Patent 6,420,057 B1 (Ueda et al.), column 1, line 57 to column 88, line 17, including compounds I-1 to XXIV-12; U.S. Patent 6,383,666 B1 (Kim et al.), col. 2, line 9 to column 21, line 67; U.S. Patent Application Publication No. 2001-0015432 A1 (Igarashi et al.), paragraph 2 57, comprising compounds (1-1) to (1-30); U.S. Patent Application Publication No. 2001-0019782 A1 (Igarashi et al.), paragraphs 13-126, including compounds (1-1) to (1-70) and (2-1) to (2-20); U.S. Patent Application Publication No. 2002-0024293 (Igarashi et al.), paragraphs 7-95, including the general formula KI to K-VI and the example compounds (K-1) to (K) -25); U.S. Patent Application Publication No. 2002-0048689 A1 (Igarashi et al.), paragraph 5-134, including Compound 1-81 and Example Compounds (1-1) to (1-81); U.S. Patent Application Publication No. 2002 -0063516 (Tsuboyama et al.), paragraphs 31-161, including each Compound 1-16; U.S. Patent Application Publication No. 2003-0068536 (Tsuboyama et al.), paragraphs 31-168, including each of the compounds of Tables 1-17, corresponding to EP-1-239-526-A2; U.S. Patent Application Bulletin 2003-0091862 (Tokito et al.), paragraph 10-190, including each of the compounds in Tables 1-17, corresponding to EP-1-239-526-A2; US Patent Application Publication No. 2003-0096138 (Lecloux et al.) , paragraphs 8-124, including Figures 1-5; U.S. Patent Application Publication No. 2002-0190250 (Grushin et al.), paragraph 9-191; U.S. Patent Application Publication No. 2002-0121638 (Grushin et al.), paragraph 8-125; U.S. Patent Application Publication No. 2003-0068526 (Kamatani et al.), paragraphs 33-572, including each of the compounds in Tables 1-23; U.S. Patent Application Publication No. 2003-0141809 (Furugori et al.), paragraphs 29-207; Application Gazette 2003-0162299 A1 (Hsieh et al.), paragraph 8-42; WO 03/084972 (Stossel et al.), Examples 1-33; WO 02/02714 A2 ((Petrov et al.), pp. 2-30 , including each of the compounds in Tables 1-5; EP 1-191-613 A1 (Takiguchi et al.), paragraphs 26-87, including each of the compounds in Tables 1-8 (equivalent to U.S. Patent Application Publication No. 2) 002-0064681); and EP 1-191-614 A2 (Tsuboyarna et al.), paragraphs 25-86, including each of the compounds in Tables 1-7; which are incorporated herein by reference in its entirety.

於一項較佳具體實施例中,本發明係針對有機發光裝置,其包含陽極、陰極及經配置於陽極與陰極間之磷光發射區域,其中發射區域包含具有式I之發射材料:In a preferred embodiment, the present invention is directed to an organic light-emitting device comprising an anode, a cathode, and a phosphorescent emitting region disposed between the anode and the cathode, wherein the emitting region comprises an emissive material having the formula I:

其中:among them:

M為第二或第三列過渡金屬;M is a second or third column transition metal;

L為輔助配位基;L is an auxiliary ligand;

環A係選自包括:Ring A is selected from the group consisting of:

(a)具有3至5個環雜原子之8-至12-員雙環狀基團;(a) an 8- to 12-membered bicyclic group having 3 to 5 ring heteroatoms;

(b)具有3至6個環雜原子之11-至18-員三環狀基團;(b) an 11- to 18-membered tricyclic group having 3 to 6 ring heteroatoms;

(c)11-至14-員經稠合三環狀基團;及(c) a 11- to 14-membered fused tricyclic group;

(d)14-至18-員經稠合四環狀基團;(d) a 14- to 18-membered fused tetracyclic group;

各RA 係獨立選自烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R、Si(R")3 、鹵基、芳基及雜芳基;a 為0至4;環B 係選自5-或6-員環狀基團、8-至12-員雙環狀基團、11-至18-員三環狀基團、11-至14-員經稠合三環狀基團及14-至18-員經稠合四環狀基團;各RB 係獨立選自烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基;b 為0至4;X1 係選自C-R1 與N;X2 係選自C-R2 與N;X3 係選自C-R3 與N;R1 、R2 及R3 係獨立選自烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基;或者,R1 與R2 或R2 與R3 一起採用而形成5-或6-員環狀基團、8-至10-員經稠合雙環狀基團、11-至14-員經稠合三環狀基團,其可視情況被一或多個取代基取代,取代基獨立選自烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基;另外或替代地,R1 與RB 一起採用而形成5-或6-員環狀基團或8-至10-員經稠合雙環狀基團;另外或替代地,R3 與RA 一起採用而形成5-或6-員環狀基團或8-至10-員經稠合雙環狀基團;各R'係獨立選自H、烷基、烯基、炔基、芳烷基、芳基及雜芳基;各R"係獨立選自H、烷基、烯基、炔基及芳烷基;n 為1或2,且m 為0至3,其中當n 為1時,m為1至3,而當n 為2時,m 為0。Each R A is independently selected from the group consisting of alkyl, alkenyl, alkynyl, aralkyl, O-R', N(R') 2 , SR', C(O)R', C(O)OR', C (O)NR' 2 , CN, CF 3 , NO 2 , SO 2 R', SOR', SO 3 R, Si(R") 3 , halo, aryl and heteroaryl; a is 0 to 4; Ring B is selected from the group consisting of a 5- or 6-membered cyclic group, an 8- to 12-membered bicyclic group, an 11- to 18-membered tricyclic group, and an 11- to 14-membered fused three. a cyclic group and a 14- to 18-membered fused tetracyclic group; each R B group is independently selected from the group consisting of alkyl, alkenyl, alkynyl, aralkyl, O-R', N(R') 2 , SR', C(O)R', C(O)OR', C(O)NR' 2 , CN, CF 3 , NO 2 , SO 2 R', SOR', SO 3 R', Si ( R") 3 , halo, aryl and heteroaryl; b is 0 to 4; X 1 is selected from CR 1 and N; X 2 is selected from CR 2 and N; X 3 is selected from CR 3 and N ; R 1 , R 2 and R 3 are independently selected from the group consisting of alkyl, alkenyl, alkynyl, aralkyl, O-R', N(R') 2 , SR', C(O)R', C ( O) OR', C(O)NR' 2 , CN, CF 3 , NO 2 , SO 2 R', SOR', SO 3 R', Si(R") 3 , halo, aryl and heteroaryl ; alternatively, R 1 and R 2 or R 2 and R 3 taken together form a 5- or 6-membered cyclic group, a 8- to 10-membered fused bicyclic via a group, 11- to 14-membered fused tricyclic group, which may optionally be substituted by one or more substituents independently selected from alkyl, alkenyl, alkynyl, aralkyl, O- R', N(R') 2 , SR', C(O)R', C(O)OR', C(O)NR' 2 , CN, CF 3 , NO 2 , SO 2 R', SOR' , SO 3 R', Si(R") 3 , halo, aryl and heteroaryl; additionally or alternatively, R 1 is taken together with R B to form a 5- or 6-membered cyclic group or 8- To a 10-membered fused bicyclic group; additionally or alternatively, R 3 is taken together with R A to form a 5- or 6-membered cyclic group or 8- to 10-membered fused bicyclic ring a group; each R' is independently selected from the group consisting of H, alkyl, alkenyl, alkynyl, aralkyl, aryl and heteroaryl; each R" is independently selected from the group consisting of H, alkyl, alkenyl, alkynyl and aralkyl group; n is 1 or 2, and m is 0 to 3, wherein when n is 1, m is 1 to 3, and when n is 2, m is 0.

所有數值範圍,例如關於n與m所給予者,係為內含地涵蓋整個範圍。因此,例如在0-4間之範圍係包括數值0,1,2,3及4。All numerical ranges, such as those given for n and m, are inclusively encompassing the entire range. Thus, for example, the range between 0-4 includes the values 0, 1, 2, 3, and 4.

於本發明之較佳具體實施例中,M係選自Ru、Os、Re、Rh、Ir、Pd及Pt。於特佳具體實施例中,M係選自Os與Ru,而於又更佳具體實施例中,M為Os。關於某些較佳具體實施例,Os為較佳金屬,因其相對較容易氧化。在進一步較佳具體實施例中,發射材料具有比約-0.7伏特較為正,更佳為比約-0.3伏特較為正,而又更佳為比約0伏特較為正之氧化電位,相對於二環戊二烯鐵/二戊鐵離子陽離子。In a preferred embodiment of the invention, the M system is selected from the group consisting of Ru, Os, Re, Rh, Ir, Pd, and Pt. In a particular embodiment, M is selected from the group consisting of Os and Ru, and in still more preferred embodiments, M is Os. With respect to certain preferred embodiments, Os is a preferred metal because it is relatively susceptible to oxidation. In a further preferred embodiment, the emissive material has a positive ratio of about -0.7 volts, more preferably about -0.3 volts, and more preferably an oxidation potential of about 0 volts, relative to dicyclopentanol. Diene iron / dipenta iron ion cation.

在另一項較佳具體實施例中,根據式I之化合物為中性化合物。中性化合物可具有在裝置之製造上較易於處理之優點,因其可使用昇華技術沉積。In another preferred embodiment, the compound according to formula I is a neutral compound. Neutral compounds can have the advantage of being easier to handle in the manufacture of the device as it can be deposited using sublimation techniques.

在根據式I之化合物為帶有電荷化合物之情況中,該化合物將包含抗衡離子,以平衡電荷。於此情況中,金屬錯合物將具有範圍為1+ 至6+ ,且較佳為1+ 至3+ 之正電荷。抗衡離子可選自不會干擾裝置中化合物功能之任何適當陰離子,例如作為發射材料。陰離子係經選擇為電化學上惰性,涵蓋裝置之操作電壓範圍。較佳抗衡陰離子典型上為微弱配位陰離子。"微弱配位陰離子"一詞本身係為此項技藝中所習知,且一般係指能夠使陰離子之負電荷去定域化之大的巨大陰離子。適當微弱配位陰離子,其並非全部均被認為是巨大,係包括但不限於:PF6 - 、BF4 - 、SbCl6 - 、三氟甲烷磺酸根、BAr4 - (Ar=C6 F5 )、BAr'4 - (Ar'=3,5-雙(三氟甲基)苯基等。此種陰離子之微弱配位性質係為熟諳此藝者所已知,且被描述於文獻中(S. Strauss等人,Chem. Rev.,1993,93,927)。Where the compound according to formula I is a charged compound, the compound will contain a counterion to balance the charge. In this case, the metal complex will have a positive charge ranging from 1 + to 6 + , and preferably from 1 + to 3 + . The counterion can be selected from any suitable anion that does not interfere with the function of the compound in the device, for example as an emissive material. The anion is selected to be electrochemically inert and covers the operating voltage range of the device. Preferred counter anions are typically weakly coordinating anions. The term "weakly complex anion" is per se known in the art and generally refers to a large, large anion capable of delocalizing the negative charge of an anion. Suitable weakly coordinating anions, not all of which are considered to be large, include but are not limited to: PF 6 - , BF 4 - , SbCl 6 - , trifluoromethanesulfonate, BAr 4 - (Ar = C 6 F 5 ) , BAr' 4 - (Ar' = 3,5-bis(trifluoromethyl)phenyl, etc. The weak coordination property of such an anion is known to those skilled in the art and is described in the literature (S Strauss et al., Chem. Rev., 1993, 93, 927).

在本發明之具體實施例中,其中n為1,m為經選擇之整數,以滿足M之價鍵;多個L可為相同或不同;且(L)m 係總稱地包含6-電子供體、單一負配位基或配位基組群。In a particular embodiment of the invention, wherein n is 1, m is a selected integer to satisfy the valence bond of M; a plurality of L may be the same or different; and the (L) m system generally comprises 6-electron for A single negative ligand or a ligand group.

在本發明之某些具體實施例中,環A係不同於環B。在本發明之較佳具體實施例中,環A與環B係經選擇為相同。In some embodiments of the invention, ring A is different from ring B. In a preferred embodiment of the invention, Ring A and Ring B are selected to be identical.

在本發明之進一步具體實施例中,發射材料具有式IaIn a further embodiment of the invention, the emissive material has the formula I a :

其中:among them:

M為第二或第三列過渡金屬;M is a second or third column transition metal;

L為輔助配位基;L is an auxiliary ligand;

環A係選自包括:Ring A is selected from the group consisting of:

(a)具有3至5個環雜原子之8-至12-員雙環狀基團;(a) an 8- to 12-membered bicyclic group having 3 to 5 ring heteroatoms;

(b)具有3至6個環雜原子之11-至18-員三環狀基團;(b) an 11- to 18-membered tricyclic group having 3 to 6 ring heteroatoms;

(c)11-至14-員經稠合三環狀基團;及(c) a 11- to 14-membered fused tricyclic group;

(d)14-至18-員經稠合四環狀基團;(d) a 14- to 18-membered fused tetracyclic group;

各RA 係獨立選自烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基;a為O至4;環B係選自包括:Each R A is independently selected from the group consisting of alkyl, alkenyl, alkynyl, aralkyl, O-R', N(R') 2 , SR', C(O)R', C(O)OR', C (O)NR' 2 , CN, CF 3 , NO 2 , SO 2 R', SOR', SO 3 R', Si(R") 3 , halo, aryl and heteroaryl; a is 0 to 4 ; Ring B is selected from the group consisting of:

(a)具有3至5個環雜原子之8-至12-員雙環狀基團;(a) an 8- to 12-membered bicyclic group having 3 to 5 ring heteroatoms;

(b)具有3至6個環雜原子之11-至18-員三環狀基團;(b) an 11- to 18-membered tricyclic group having 3 to 6 ring heteroatoms;

(c)11-至14-員經稠合三環狀基團;及(c) a 11- to 14-membered fused tricyclic group;

(d)14-至18-員經稠合四環狀基團;(d) a 14- to 18-membered fused tetracyclic group;

各RB 係獨立選自烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3、鹵基、芳基及雜芳基;b為0至4;Xl 係選自C-R1 與N;X2 係選自C-R2 與N;X3 係選自C-R3 與N;R1 、R2 及R3 係獨立選自烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基;或者,R1 與R2 或R2 與R3 一起採用而形成5-或6-員環狀基團、8-至10-員經稠合雙環狀基團、11-至14-員經稠合三環狀基團,其可視情況被一或多個取代基取代,取代基獨立選自烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基;另外或替代地,R1 與RB 一起採用而形成5-或6-員環狀基團或8-至10-員經稠合雙環狀基團;另外或替代地,R3 與RA 一起採用而形成5-或6-員環狀基團或8-至10-員經稠合雙環狀基團;各R'係獨立選自H、烷基、烯基、炔基、芳烷基、芳基及雜芳基;各R"係獨立選自H、烷基、烯基、炔基及芳烷基:n 為1或2;且m 為0至3,其中當n 為1時,m為1至3,而當n 為2時,m 為0。Each R B is independently selected from the group consisting of alkyl, alkenyl, alkynyl, aralkyl, O-R', N(R') 2 , SR', C(O)R', C(O)OR', C (O)NR' 2 , CN, CF 3 , NO 2 , SO 2 R', SOR', SO 3 R', Si(R") 3 , halo, aryl and heteroaryl; b is 0 to 4 X l is selected from CR 1 and N; X 2 is selected from CR 2 and N; X 3 is selected from CR 3 and N; and R 1 , R 2 and R 3 are independently selected from alkyl, alkenyl and alkyne. Base, aralkyl, O-R', N(R') 2 , SR', C(O)R', C(O)OR', C(O)NR' 2 , CN, CF 3 , NO 2 , SO 2 R′, SOR′, SO 3 R′, Si(R”) 3 , halo, aryl and heteroaryl; or R 1 and R 2 or R 2 together with R 3 form a 5- Or a 6-membered cyclic group, a 8- to 10-membered fused bicyclic group, a 11- to 14-membered fused tricyclic group, which may optionally be substituted with one or more substituents The substituents are independently selected from the group consisting of alkyl, alkenyl, alkynyl, aralkyl, O-R', N(R') 2 , SR', C(O)R', C(O)OR', C ( O) NR' 2 , CN, CF 3 , NO 2 , SO 2 R', SOR', SO 3 R', Si(R") 3 , halo, aryl and heteroaryl; additionally or alternatively, R 1 and R B taken together to form a 5- or 6-membered cyclic group, or a 8- to 10-membered by Together bicyclic group; Additionally or alternatively, R 3 and R A are taken together to form a 5- or 6-membered cyclic group, or a 8- to 10-membered fused bicyclic group by group; each R ' Is independently selected from the group consisting of H, alkyl, alkenyl, alkynyl, aralkyl, aryl and heteroaryl; each R" is independently selected from the group consisting of H, alkyl, alkenyl, alkynyl and aralkyl: n is 1 or 2; and m is 0 to 3, wherein when n is 1, m is 1-3, and when n is 2, m is 0.

在根據式I化合物之進一步較佳具體實施例中,金屬中心係經結合至兩個三叉配位基(n=2,m=0),以獲得具有式II之化合物:In a further preferred embodiment according to the compound of formula I, the metal center is bonded to two tridentate ligands (n=2, m=0) to obtain a compound of formula II:

其中X1 、X2 、X3 、RA 、RB 、M、環A 、環B、ab 均如關於式I化合物所述。Wherein X 1 , X 2 , X 3 , R A , R B , M, ring A , ring B, a and b are as described for the compound of formula I.

包含兩個三叉配位基之本發明化合物係為較佳。此種化合物係為較佳,因咸信此種配位基組態,當被摻入有機發光裝置中時,可改良材料之安定性。再者,此種材料可具有更安定地在較佳沉積技術譬如OVPD期間昇華之其他優點。The compounds of the invention comprising two tridentate ligands are preferred. Such a compound is preferred because of its ligand configuration, which improves the stability of the material when incorporated into an organic light-emitting device. Moreover, such materials may have other advantages of being more stable in sublimation during preferred deposition techniques such as OVPD.

"5-或6-員環狀基團"一詞係指五或六員環,其可為飽和、部份不飽和或芳族,且可視情況含有一或多個環雜原子。The term "5- or 6-membered cyclic group" refers to a five- or six-membered ring which may be saturated, partially unsaturated or aromatic, and optionally containing one or more ring heteroatoms.

當環A(及環B,在某些具體實施例中)係經選擇為(a)具有3至5個環雜原子之8-至12-員雙環狀基團時,雙環狀基團之環可視情況經稠合。在較佳具體實施例中,雙環狀基團之環為芳族。具有3至5個環雜原子之較佳雙環狀基團可選自下列環系統:When ring A (and ring B, in certain embodiments) is selected to be (a) an 8- to 12-membered bicyclic group having 3 to 5 ring heteroatoms, a bicyclic group The ring can be fused as appropriate. In a preferred embodiment, the ring of the bicyclic group is aromatic. Preferred bicyclic groups having 3 to 5 ring heteroatoms may be selected from the following ring systems:

其中RA2 為5-至6-員環狀基團;且subst表示選用取代基,選自鹵基、烷基、CN、CO2 R、C(O)R、NR2 、環狀-胺基、NO2 及OR。Wherein R A2 is a 5- to 6-membered cyclic group; and subst represents a substituent selected from the group consisting of halo, alkyl, CN, CO 2 R, C(O)R, NR 2 , cyclic-amino group. , NO 2 and OR.

"8-至10-員經稠合雙環狀基團"一詞係指八至十員環系統,其中各環係經稠合(意即該環共有兩個相鄰環原子),且可為飽和、部份不飽和或芳族,及可視情況含有一或多個環雜原子。The term "8- to 10-membered fused bicyclic group" refers to an eight to ten membered ring system in which each ring system is fused (ie, the ring shares two adjacent ring atoms) and It is saturated, partially unsaturated or aromatic, and optionally contains one or more ring heteroatoms.

當環A(及環B,在某些具體實施例中)係經選擇為(b)具有3至6個環雜原子之11-至18-員三環狀基團時,三環狀基團之兩個環可視情況經稠合。在較佳具體實施例中,三環狀基團之環為芳族。具有3至5個環雜原子之較佳三環狀基團可選自下列環系統:When ring A (and ring B, in certain embodiments) is selected to be (b) an 11- to 18-membered tricyclic group having 3 to 6 ring heteroatoms, a tricyclic group The two rings can be fused as appropriate. In a preferred embodiment, the ring of the tricyclic group is aromatic. Preferred tricyclic groups having 3 to 5 ring heteroatoms may be selected from the following ring systems:

其中RA2 為5-至6-員環狀基團;且RA3 係選自8-至12-員雙環狀基團。Wherein R A2 is a 5- to 6-membered cyclic group; and R A3 is selected from the group consisting of 8- to 12-membered bicyclic groups.

"11-至14-員經稠合三環狀基團"一詞係指十一至十四員環系統,其中各環可為飽和、部份不飽和或芳族,且可視情況含有一或多個環雜原子。The term "11- to 14-membered fused tricyclic group" means an eleven to fourteen member ring system in which each ring may be saturated, partially unsaturated or aromatic, and may optionally contain one or Multiple ring heteroatoms.

在某些具體實施例中,環A(及環B,在某些具體實施例中)係經選擇為(c)11-至14-員經稠合三環狀基團。較佳11-至14-員經稠合三環狀基團可選自下列環系統:In certain embodiments, Ring A (and Ring B, in certain embodiments) is selected to be a (c) 11- to 14-membered fused tricyclic group. Preferably, the 11- to 14-membered fused tricyclic group can be selected from the following ring systems:

"14-至18-員經稠合四環狀基團"一詞係指十四至十八員環系統,其中各環可為飽和、部份不飽和或芳族,且可視情況含有一或多個環雜原子。The term "14- to 18-membered fused tetracyclic group" means a fourteen to eighteen member ring system in which each ring may be saturated, partially unsaturated or aromatic, and may optionally contain one or Multiple ring heteroatoms.

在某些具體實施例中,環A(及環B,在某些具體實施例中)係經選擇為(d)14-至18-員經稠合四環狀基團。較佳14-至18-員經稠合四環狀基團可選自下列環系統:In certain embodiments, Ring A (and Ring B, in certain embodiments) is selected to be a (d) 14- to 18-membered fused tetracyclic group. Preferably, the 14- to 18-membered fused tetracyclic group can be selected from the following ring systems:

於本發明之進一步具體實施例中,發射材料具有式III:In a further embodiment of the invention, the emissive material has the formula III:

其中:M為第二或第三列過渡金屬;L為輔助配位基;Y1 係選自N與C-R4 ;Y2 係選自N與C-R5 ;R4 與R5 係獨立選自烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基;或者,R4 與R5 一起採用而形成5-或6-員環狀基團、8-至10-員經稠合雙環狀基團、11-至14-員經稠合三環狀基團,其可視情況被一或多個取代基取代,取代基獨立選自烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基;R12 係選自烷基、芳基、芳烷基、環烷基及C(O)R';Z1 係選自N與C-R6 ;Z2 係選自N與C-R7 ;R6 與R7 係獨立選自烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基;或者,R6 與R7 一起採用而形成5-或6-員環狀基團、8-至10-員經稠合雙環狀基團、11-至14-員經稠合三環狀基團,其可視情況被一或多個取代基取代,取代基獨立選自烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基;R22 係選自烷基、芳基、芳烷基、環烷基及C(O)R';X1 係選自C-R1 與N;X2 係選自C-R2 與N;X3 係選自C-R3 與N;R1 、R2 及R3 係獨立選自烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基;或者,R1 與R2 或R2 與R3 一起採用而形成5-或6-員環狀基團、8-至10-員經稠合雙環狀基團、11-至14-員經稠合三環狀基團,其可視情況被一或多個取代基取代,取代基獨立選自烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基;另外或替代地,R1 與R6 一起採用而形成5-或6-員環狀基團或8-至10-員經稠合雙環狀基團;另外或替代地,R3 與R4 一起採用而形成5-或6-員環狀基團或8-至10-員經稠合雙環狀基團;各R'係獨立選自H、烷基、烯基、炔基、芳烷基、芳基及雜芳基;各R"係獨立選自H、烷基、烯基、炔基及芳烷基;n為1或2;且m為0至3,其中當n為1時,m為1至3,而當n為2時,m為0。Wherein: M is a second or third column transition metal; L is an auxiliary ligand; Y 1 is selected from N and CR 4 ; Y 2 is selected from N and CR 5 ; and R 4 and R 5 are independently selected from the group consisting of an alkane Base, alkenyl, alkynyl, aralkyl, O-R', N(R') 2 , SR', C(O)R', C(O)OR', C(O)NR' 2 , CN , CF 3 , NO 2 , SO 2 R′, SOR′, SO 3 R′, Si(R”) 3 , halo, aryl and heteroaryl; or R 4 and R 5 together form a 5- Or a 6-membered cyclic group, a 8- to 10-membered fused bicyclic group, a 11- to 14-membered fused tricyclic group, which may optionally be substituted with one or more substituents The substituents are independently selected from the group consisting of alkyl, alkenyl, alkynyl, aralkyl, O-R', N(R') 2 , SR', C(O)R', C(O)OR', C ( O) NR' 2 , CN, CF 3 , NO 2 , SO 2 R', SOR', SO 3 R', Si(R") 3 , halo, aryl and heteroaryl; R 12 is selected from alkane a group, an aryl group, an arylalkyl group, a cycloalkyl group, and a C(O)R'; the Z 1 group is selected from N and CR 6 ; the Z 2 system is selected from N and CR 7 ; and the R 6 and R 7 are independently selected from the group consisting of an alkane Base, alkenyl, alkynyl, aralkyl, O-R', N(R') 2 , SR', C(O)R', C(O)OR', C(O)NR' 2 , CN , CF 3 , NO 2 , SO 2 R', SOR', SO 3 R', S i(R") 3 , halo, aryl and heteroaryl; or R 6 together with R 7 to form a 5- or 6-membered cyclic group, 8- to 10-membered fused bicyclic ring a group, 11- to 14-membered fused tricyclic group, which may optionally be substituted by one or more substituents independently selected from alkyl, alkenyl, alkynyl, aralkyl, O -R', N(R') 2 , SR', C(O)R', C(O)OR', C(O)NR' 2 , CN, CF 3 , NO 2 , SO 2 R', SOR ', SO 3 R', Si (R") 3 , halo, aryl and heteroaryl; R 22 is selected from the group consisting of alkyl, aryl, aralkyl, cycloalkyl and C(O)R'; X 1 is selected from CR 1 and N; X 2 is selected from CR 2 and N; X 3 is selected from CR 3 and N; and R 1 , R 2 and R 3 are independently selected from alkyl, alkenyl and alkynyl groups. , aralkyl, O-R', N(R') 2 , SR', C(O)R', C(O)OR', C(O)NR' 2 , CN, CF 3 , NO 2 , SO 2 R', SOR', SO 3 R', Si(R") 3 , halo, aryl and heteroaryl; or R 1 and R 2 or R 2 together with R 3 form a 5- or a 6-membered cyclic group, a 8- to 10-membered fused bicyclic group, and a 11- to 14-membered fused tricyclic group, which may be optionally substituted with one or more substituents, Substitute Is selected from alkyl, alkenyl, alkynyl, aralkyl, OR ', N (R' ) 2, SR ', C (O) R', C (O) OR ', C (O) NR' 2 , CN, CF 3 , NO 2 , SO 2 R', SOR', SO 3 R', Si(R") 3 , halo, aryl and heteroaryl; additionally or alternatively, R 1 and R 6 Used together to form a 5- or 6-membered cyclic group or an 8- to 10-membered fused bicyclic group; additionally or alternatively, R 3 is used together with R 4 to form a 5- or 6-member a cyclic group or a 8- to 10-membered fused bicyclic group; each R' is independently selected from the group consisting of H, alkyl, alkenyl, alkynyl, aralkyl, aryl and heteroaryl; R" is independently selected from the group consisting of H, alkyl, alkenyl, alkynyl and aralkyl; n is 1 or 2; and m is 0 to 3, wherein when n is 1, m is 1 to 3, and when n When it is 2, m is 0.

在式III發射材料之某些較佳具體實施例中,Y1 與Y2 之至少一個為N。於特佳具體實施例中,R12 係進一步經選擇為芳基。In certain preferred embodiments of the emissive material of Formula III, at least one of Y 1 and Y 2 is N. In a particular embodiment, the R 12 system is further selected to be an aryl group.

在式III發射材料之某些較佳具體實施例中,Z1 與Z2 之至少一個為N。於特佳具體實施例中,R22 係進一步經選擇為芳基。In certain preferred embodiments of the emissive material of Formula III, at least one of Z 1 and Z 2 is N. In particularly preferred embodiments, R 22 is further selected based aryl group.

在式III發射材料之其他較佳具體實施例中,Y1 與Y2 係個別為C-R4 與C-R5 ,且R4 與R5 一起採用而形成8-至10- 員經稠合雙環狀基團或11-至14-員經稠合三環狀基團,其可視情況被一或多個取代基取代,取代基獨立選自烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基。In other preferred embodiments of the emissive material of Formula III, the Y 1 and Y 2 lines are individually CR 4 and CR 5 , and R 4 and R 5 are employed together to form a 8- to 10 - membered fused bicyclic ring. a group or a 11- to 14-membered fused tricyclic group optionally substituted with one or more substituents independently selected from the group consisting of alkyl, alkenyl, alkynyl, aralkyl, O- R', N(R') 2 , SR', C(O)R', C(O)OR', C(O)NR' 2 , CN, CF 3 , NO 2 , SO 2 R', SOR' , SO 3 R', Si(R") 3 , halo, aryl and heteroaryl.

在式III發射材料之其他較佳具體實施例中,Z1 與Z2 係個別為C-R6 與CR7 ,且R6 與R7 一起採用而形成8-至10-員經稠合雙環狀基團或11-至14-員經稠合三環狀基團,其可視情況被一或多個取代基取代,取代基獨立選自烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基。In other preferred embodiments of the emissive material of Formula III, the Z 1 and Z 2 systems are individually CR 6 and CR 7 , and R 6 and R 7 are employed together to form a 8- to 10-membered fused bicyclic ring. a group or a 11- to 14-membered fused tricyclic group optionally substituted with one or more substituents independently selected from the group consisting of alkyl, alkenyl, alkynyl, aralkyl, O- R', N(R') 2 , SR', C(O)R', C(O)OR', C(O)NR' 2 , CN, CF 3 , NO 2 , SO 2 R', SOR' , SO 3 R', Si(R") 3 , halo, aryl and heteroaryl.

於本發明之進一步具體實施例中,發射材料具有式IV:In a further embodiment of the invention, the emissive material has the formula IV:

其中:M為第二或第三列過渡金屬;虛線表示選用之雙鍵;X2 係選自C-R2 或N;R2 係選自H、烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基;R5 係選自H、烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基;R7 係選自H、烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基;R12 係選自烷基、芳基、芳烷基、環烷基及C(O)R';R13 與R14 係獨立選自H、烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基;另外或替代地,R13 與R14 係形成稠合5-或6-員環狀基團,其中稠合環狀基團係視情況被一或多個取代基取代,取代基選自烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基;R22 係選自烷基、芳基、芳烷基、環烷基及C(O)R';R23 與R24 係獨立選自H、烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基;另外或替代地,R23 與R24 係形成稠合5-或6-員環狀基團,其中稠合環狀基團係視情況被一或多個取代基取代,取代基選自烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基;各R'係獨立選自H、烷基、烯基、炔基、芳烷基、芳基及雜芳基;且各R"係獨立選自H、烷基、烯基、炔基及芳烷基。Wherein: M is a second or third column transition metal; a broken line indicates an optional double bond; X 2 is selected from CR 2 or N; and R 2 is selected from the group consisting of H, alkyl, alkenyl, alkynyl, aralkyl, O-R', N(R') 2 , SR', C(O)R', C(O)OR', C(O)NR' 2 , CN, CF 3 , NO 2 , SO 2 R', SOR', SO 3 R', Si(R") 3 , halo, aryl and heteroaryl; R 5 is selected from H, alkyl, alkenyl, alkynyl, aralkyl, O-R', N(R') 2 , SR', C(O)R', C(O)OR', C(O)NR' 2 , CN, CF 3 , NO 2 , SO 2 R', SOR', SO 3 R', Si(R") 3 , halo, aryl and heteroaryl; R 7 is selected from H, alkyl, alkenyl, alkynyl, aralkyl, O-R', N(R') 2 , SR', C(O)R', C(O)OR', C(O)NR' 2 , CN, CF3, NO 2 , SO 2 R', SOR', SO 3 R', Si (R ") 3 , halo, aryl and heteroaryl; R 12 is selected from the group consisting of alkyl, aryl, aralkyl, cycloalkyl and C(O)R'; R 13 and R 14 are independently selected from H , alkyl, alkenyl, alkynyl, aralkyl, O-R', N(R') 2 , SR', C(O)R', C(O)OR', C(O)NR' 2 , CN, CF 3 , NO 2 , SO 2 R', SOR', SO 3 R', Si(R") 3 , halo, aryl and heteroaryl; additionally or alternatively, R 13 and R 14 form a fused 5- or 6-membered cyclic group, wherein the fused cyclic group is optionally substituted by one or more substituents selected from alkyl, alkenyl, alkyne Base, aralkyl, O-R', N(R') 2 , SR', C(O)R', C(O)OR', C(O)NR' 2 , CN, CF 3 , NO 2 , SO 2 R′, SOR′, SO 3 R′, Si(R”) 3 , halo, aryl and heteroaryl; R 22 is selected from the group consisting of alkyl, aryl, aralkyl, cycloalkyl and C(O)R'; R 23 and R 24 are independently selected from H, alkyl, alkenyl, alkynyl, aralkyl, O-R', N(R') 2 , SR', C(O) R', C(O)OR', C(O)NR' 2 , CN, CF 3 , NO 2 , SO 2 R', SOR', SO 3 R', Si(R") 3 , halo, aromatic And a heteroaryl group; additionally or alternatively, R 23 and R 24 form a fused 5- or 6-membered cyclic group, wherein the fused cyclic group is optionally substituted with one or more substituents, The substituent is selected from the group consisting of alkyl, alkenyl, alkynyl, aralkyl, O-R', N(R') 2 , SR', C(O)R', C(O)OR', C(O) NR' 2 , CN, CF 3 , NO 2 , SO 2 R', SOR', SO 3 R', Si(R") 3 , halo, aryl and heteroaryl; each R' is independently selected from H , alkyl, alkenyl, alkynyl, aralkyl And aryl and heteroaryl; and each R" is independently selected from the group consisting of H, alkyl, alkenyl, alkynyl and aralkyl.

在本發明之較佳具體實施例中,各X1 、X2 及X3係個別經選擇為C-R1 、C-R2 、C-R3In a preferred embodiment of the invention, each of X 1 , X 2 and X3 is individually selected to be CR 1 , CR 2 , CR 3 .

芳基與雜芳基之較佳取代基包括CF3 、CN、CH3 、F及苯基。在較佳具體實施例中,取代基R2 係選自CF3 、CN、CH3 、F及苯基,其中CF3 與CN係為特佳。Preferred substituents for aryl and heteroaryl include CF 3 , CN, CH 3 , F and phenyl. In a preferred embodiment, the substituent R 2 is selected from the group consisting of CF 3 , CN, CH 3 , F, and phenyl, with CF 3 and CN being particularly preferred.

在本發明之一項較佳具體實施例中,裝置包含發射材料,選自第1組、第2組或表I,其係提供使用G98/B31yp/cep-31g基礎組合之密度功能理論(DFT)計算,以獲得關於本發明各種化合物之HOMO、LUMO、HOMO-LUMO間隙、單態能量S1及三重態能量T1之估計。In a preferred embodiment of the invention, the device comprises an emissive material selected from Group 1, Group 2 or Table I, which provides a density function theory (DFT) using a G98/B31yp/cep-31g basis combination. Calculations to obtain estimates of HOMO, LUMO, HOMO-LUMO gaps, singlet energy S1, and triplet energy T1 for various compounds of the invention.

較佳具體實施例包括含有兩個三叉配位基之鋨複合物,其每一個均具有對於來自碳烯與來自陰離子性苯環之金屬中心之鍵結。A preferred embodiment includes a ruthenium complex containing two tridentate ligands, each having a bond to a metal center from a carbene and from an anionic benzene ring.

於本文中使用之"鹵基"或"鹵素"術語包括氟、氯、溴及碘。The term "halo" or "halogen" as used herein includes fluoro, chloro, bromo and iodo.

於本文中使用之"烷基"一詞係意欲涵蓋直鏈與分枝鏈烷基兩者。較佳烷基為含有一至十五個碳原子者,且包括甲基、乙基、丙基、異丙基、丁基、異丁基、第三-丁基等。此外,烷基可視情況被一或多個取代基取代,取代基取選自鹵基、CN、CO2 R、C(O)R、NR2 、環狀-胺基、NO2 及OR,其中各R係獨立選自H、烷基、烯基、炔基、芳烷基、芳基及雜芳基。The term "alkyl" as used herein is intended to encompass both straight and branched chain alkyl groups. Preferred alkyl groups are those having from one to fifteen carbon atoms and include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, tert-butyl and the like. Further, the alkyl group may be optionally substituted by one or more substituents selected from the group consisting of halo, CN, CO 2 R, C(O)R, NR 2 , cyclic-amine groups, NO 2 and OR, wherein Each R is independently selected from the group consisting of H, alkyl, alkenyl, alkynyl, aralkyl, aryl and heteroaryl.

於本文中使用之"環烷基"一詞係意欲涵蓋環狀烷基。較佳環烷基為含有3至7個碳原子者,且包括環丙基、環戊基、環己基等。此外,環烷基可視情況被一或多個取代基取代,取代基選自鹵基、CN、CO2 R、C(O)R、NR2 、環狀-胺基、NO2 及OR。The term "cycloalkyl" as used herein is intended to encompass a cyclic alkyl group. Preferred cycloalkyl groups are those having 3 to 7 carbon atoms and include cyclopropyl, cyclopentyl, cyclohexyl and the like. Further, the cycloalkyl group may be optionally substituted with one or more substituents selected from the group consisting of halo, CN, CO 2 R, C(O)R, NR 2 , cyclic-amine groups, NO 2 and OR.

於本文中使用之"烯基"一詞係意欲涵蓋直鏈與分枝鏈烯烴基團兩者。較佳烯基為含有二至十五個碳原子者。此外,烯基可視情況被一或多個取代基取代,取代基選自鹵基、CN、CO2 R、C(O)R、NR2 、環狀-胺基、NO2 及OR。The term "alkenyl" as used herein is intended to encompass both straight-chain and branched alkene groups. Preferred alkenyl groups are those having from two to fifteen carbon atoms. Further, the alkenyl group may be optionally substituted with one or more substituents selected from the group consisting of halo, CN, CO 2 R, C(O)R, NR 2 , cyclic-amine groups, NO 2 and OR.

於本文中使用之"炔基"一詞係意欲涵蓋直鏈與分枝鏈炔烴基團兩者。較佳炔基為含有二至十五個碳原子者。此外,炔基可視情況被一或多個取代基取代,取代基選自鹵基、CN、CO2 R、C(O)R、NR2 、環狀-胺基、NO2 及OR。The term "alkynyl" as used herein is intended to encompass both straight-chain and branched alkyne groups. Preferred alkynyl groups are those having from two to fifteen carbon atoms. Furthermore, the alkynyl group may be optionally substituted by one or more substituents selected from the group consisting of halo, CN, CO 2 R, C(O)R, NR 2 , cyclic-amine groups, NO 2 and OR.

於本文中使用之"芳烷基"一詞係意欲涵蓋具有芳族基團作為取代基之烷基。此外,芳烷基可視情況在芳基上被一或多個取代基取代,取代基選自鹵基、CN、CO2 R、C(O)R、NR2 、環狀-胺基、NO2 及OR。The term "aralkyl" as used herein is intended to encompass alkyl groups having an aromatic group as a substituent. Further, the aralkyl group may be optionally substituted on the aryl group with one or more substituents selected from the group consisting of halo, CN, CO 2 R, C(O)R, NR 2 , cyclic-amine group, NO 2 . And OR.

於本文中使用之"雜環族基團"一詞係意欲涵蓋非芳族環狀基團。較佳雜環族基團為含有3或7個環原子者,其包含至少一個雜原子,且包括環狀胺類,譬如嗎福啉基、六氫吡啶基、四氫吡咯基等,及環狀醚類,譬如四氫呋喃、四氫哌喃等。此外,雜環族基團可視情況被一或多個取代基取代,取代基選自鹵基、CN、CO2 R、C(O)R、NR2 、環狀-胺基、NO2 及OR。The term "heterocyclic group" as used herein is intended to encompass a non-aromatic cyclic group. Preferred heterocyclic groups are those having 3 or 7 ring atoms, which contain at least one hetero atom, and include cyclic amines such as morpholinol, hexahydropyridyl, tetrahydropyrrolyl, etc., and rings. Ethers such as tetrahydrofuran, tetrahydropyran, and the like. Furthermore, a heterocyclic group may be optionally substituted by one or more substituents selected from halo, CN, CO 2 R, C(O)R, NR 2 , cyclic-amine, NO 2 and OR. .

於本文中使用之"芳基"或"芳族基團"術語係意欲涵蓋單環基團與多環狀環系統。多環狀環可具有兩個或多個環,其中兩個碳為兩個鄰接環所共用(此等環係經"稠合"),其中至少一個環為芳族,例如其他環可為環烷基、環烯基、芳基、雜環及/或雜芳基。此外,芳基可視情況被一或多個取代基取代,取代基選自鹵基、CN、CO2 R、C(O)R、NR2 、環狀-胺基、NO2 及OR。The terms "aryl" or "aromatic group" as used herein are intended to encompass both monocyclic and polycyclic ring systems. A multi-ring ring may have two or more rings, wherein two carbons are shared by two adjacent rings (these rings are "fused"), at least one of which is aromatic, for example other rings may be rings Alkyl, cycloalkenyl, aryl, heterocyclic and/or heteroaryl. Further, the aryl group may be optionally substituted with one or more substituents selected from the group consisting of halo, CN, CO 2 R, C(O)R, NR 2 , cyclic-amine groups, NO 2 and OR.

於本文中使用之"雜芳基"一詞係意欲涵蓋可包含一至三個雜原子之單環雜芳族基團,例如吡咯、呋喃、噻吩、咪唑、唑、噻唑、三唑、吡唑、吡啶、吡及嘧啶等。雜芳基一詞亦包括具有兩個或多個環之多環狀雜芳族系統,其中兩個原子為兩個鄰接環所共用(此等環係經"稠合"),其中至少一個環為雜芳基,例如其他環可為環烷基、環烯基、芳基、雜環及/或雜芳基,且包括例如喹啉、異喹啉、吲哚、咔唑等。此外,雜芳基可視情況被一或多個取代基取代,取代基選自鹵基、CN、CO2 R、C(O)R、NR2 、環狀-胺基、NO2 及OR。The term "heteroaryl" as used herein is intended to encompass monocyclic heteroaromatic groups which may contain from one to three heteroatoms, such as pyrrole, furan, thiophene, imidazole, Oxazole, thiazole, triazole, pyrazole, pyridine, pyridyl And pyrimidine and the like. The term heteroaryl also includes polycyclic heteroaromatic systems having two or more rings in which two atoms are shared by two adjacent rings (these rings are "fused"), at least one of which is A heteroaryl group, for example, other rings may be cycloalkyl, cycloalkenyl, aryl, heterocyclic, and/or heteroaryl, and includes, for example, quinoline, isoquinoline, indole, oxazole, and the like. Further, the heteroaryl group may be optionally substituted by one or more substituents selected from the group consisting of halo, CN, CO 2 R, C(O)R, NR 2 , cyclic-amine groups, NO 2 and OR.

應明瞭的是,本文中所述之各種具體實施例係僅作為實例,而非意欲限制本發明之範圍。例如,本文中所述之許多物質與結構可在未偏離本發明之精神下被其他物質與結構取代。應明瞭的是,關於本發明為何發生作用之各種理論並非意欲成為限制。例如,關於電荷轉移之理論並非意欲成為限制。It should be understood that the various embodiments described herein are by way of example only, and are not intended to For example, many of the materials and structures described herein may be substituted by other materials and structures without departing from the spirit of the invention. It should be understood that the various theories as to why the invention works are not intended to be limiting. For example, the theory of charge transfer is not intended to be a limitation.

物質定義:Substance definition:

當於本文中使用時,縮寫係指如下述之物質:CBP: 4,4'-N,N-二咔唑-聯苯m-MTDATA 4,4',4"-參(3-甲基苯基苯胺基)三苯基胺Alq3 : 8-參-羥基喹啉鋁Bphen:  4,7-二苯基-1,10-二氮菲n-BPhen: n-摻雜之BPhen(以鋰摻雜)F4 -TCNQ: 四氟-四氰基-喹啉并二甲烷p-MTDATA: p-摻雜之m-MTDATA(以F4 -TCNQ摻雜)Ir(ppy)3 : 參(2-苯基吡啶)-銥Ir(ppz)3 : 參(1-苯基吡唑并,N,C(2')銥(III)BCP: 2,9-二甲基-4,7-二苯基-1,10-二氮菲TAZ: 3-苯基-4-(1'-萘基)-5-苯基-1,2,4-三唑CuPc: 銅苯二甲藍素ITO: 氧化銦錫NPD: N,N'-二苯基-N-N'-二(1-萘基)-聯苯胺TPD: N,N'-二苯基-N-N'-二(3-甲苯基)-聯苯胺BAIq: 雙(2-甲基-8-羥基喹啉基)4-苯基酚鋁(III)mCP: 1,3-N,N-二咔唑-苯DCM: 4-(二氰基乙烯)-6-(4-二甲胺基苯乙烯基-2-甲基)-4H-哌喃DMQA: N,N'-二甲基喹吖啶酮PEDOT:PSS: 聚(3,4-次乙二氧基噻吩)與聚苯乙烯磺酸鹽(PSS)之含水分散液DTB 3,3'-二(苯并菲-2-基)聯苯HIL4 fac-參[2-(3-甲基-2-吡啶基-κN)苯基-κC]銥(III)As used herein, the abbreviation refers to a substance such as CBP: 4,4'-N,N-dicarbazole-biphenyl m-MTDATA 4,4',4"-para (3-methylbenzene) Benzoamino)triphenylamine Alq 3 : 8-hhenyl-quinolinol aluminum Bphen: 4,7-diphenyl-1,10-diazepine n-BPhen: n-doped BPhen (doped with lithium) Hetero) F 4 -TCNQ: tetrafluoro-tetracyano-quinodimethane p-MTDATA: p-doped m-MTDATA (doped with F 4 -TCNQ) Ir(ppy) 3 : ginseng (2- Phenylpyridine)-铱Ir(ppz) 3 : 参(1-phenylpyrazolo, N,C(2')铱(III)BCP: 2,9-dimethyl-4,7-diphenyl -1,10-diazepine TAZ: 3-phenyl-4-(1'-naphthyl)-5-phenyl-1,2,4-triazole CuPc: copper phthalocyanine ITO: indium oxide Tin NPD: N,N'-diphenyl-N-N'-bis(1-naphthyl)-benzidine TPD: N,N'-diphenyl-N-N'-bis(3-tolyl) -benzidine BAIq: bis(2-methyl-8-hydroxyquinolyl) 4-phenylphenol aluminum (III) mCP: 1,3-N,N-dicarbazole-benzene DCM: 4-(dicyandi Ethylene)-6-(4-dimethylaminostyryl-2-yl)-4H-pyran DMQA: N,N'-dimethylquinacridone PEDOT:PSS: poly(3,4 - aqueous dispersion of poly(diethylenedioxythiophene) and polystyrene sulfonate (PSS) DTB 3,3'-di(benzene And phenanthrene-2-yl)biphenyl HIL4 fac-gin[2-(3-methyl-2-pyridyl-κN)phenyl-κC]铱(III)

實驗:experiment:

現在將描述本發明之特定代表性具體實施例,包括可如何施行此種具體實施例。應明瞭的是特定方法、物質、條件、製程參數、裝置等未必限制本發明之範圍。Specific representative embodiments of the invention will now be described, including how such embodiments may be practiced. It should be understood that specific methods, materials, conditions, process parameters, devices, etc., do not necessarily limit the scope of the invention.

鋨碳烯複合物1(Os1)之合成Synthesis of ruthenium carbene complex 1 (Os1) 步驟1:OsStep 1: Os 1-A1-A

於三頸1000毫升圓底燒瓶中,添加19.1克苯并咪唑、25.0克1,3-二碘苯、1.46克碘化銅(I)、44.7克碳酸鉀、2.77克1,10-二氮菲及500毫升無水N,N-二甲基甲醯胺。將反應混合物於氮氣下加熱至回流,歷經2天。於冷卻至室溫後,過濾反應物,並藉迴轉式蒸發,自濾液移除溶劑。使粗產物藉矽膠管柱層析純化,使用95%二氯甲烷/甲醇作為溶離劑。合併含有所要物質之溶離份,及藉迴轉式蒸發移除溶劑。使產物自二氯甲烷/醋酸乙酯混合物結晶。藉真空過濾收集產物(18克),為白色固體。In a three-neck 1000 ml round bottom flask, 19.1 g of benzimidazole, 25.0 g of 1,3-diiodobenzene, 1.46 g of copper (I) iodide, 44.7 g of potassium carbonate, and 2.77 g of 1,10-diazepine were added. And 500 ml of anhydrous N,N-dimethylformamide. The reaction mixture was heated to reflux under nitrogen over 2 days. After cooling to room temperature, the reaction was filtered and the solvent was removed from the filtrate by rotary evaporation. The crude product was purified by column chromatography eluting with 95% dichloromethane/methanol as solvent. The dissolved fractions containing the desired material are combined and the solvent is removed by rotary evaporation. The product was crystallized from a dichloromethane/ethyl acetate mixture. The product was collected by vacuum filtration (18 g) as a white solid.

步驟2:Os 1-B Step 2 : Os 1-B

於1000毫升圓底燒瓶中,添加15克化合物A、30克碘甲烷及400毫升N,N-二甲基甲醯胺。將混合物加熱至大約60℃,歷經18小時。過濾混合物,並將固體以醋酸乙酯洗滌。然後,將固體在400毫升回流之甲醇中配成漿液,冷卻,接著過濾,而產生20克所要之產物,為白色固體。In a 1000 ml round bottom flask, 15 g of Compound A, 30 g of methyl iodide and 400 ml of N,N-dimethylformamide were added. The mixture was heated to about 60 ° C for 18 hours. The mixture was filtered and the solid was washed with ethyl acetate. The solid was then slurried in 400 mL of refluxing methanol, cooled and filtered to give 20 g of desired material as a white solid.

步驟3:OsH 4 (PPh 3 ) 3 Step 3 : OsH 4 (PPh 3 ) 3

於1000毫升三頸圓底燒瓶中,添加3.6克三苯膦與100毫升乙醇。將混合物加熱至回流,並添加1.0克六氯基鋨酸銨。接著逐滴添加0.43克硼氫化鈉在50毫升乙醇中之溶液。使反應物回流30分鐘,然後冷卻至室溫。藉真空過濾收集灰白色固體。將固體連續以乙醇、水、乙醇及己烷洗滌。In a 1000 ml 3-neck round bottom flask, 3.6 g of triphenylphosphine and 100 ml of ethanol were added. The mixture was heated to reflux and 1.0 g of ammonium hexachloroantimonate was added. A solution of 0.43 g of sodium borohydride in 50 ml of ethanol was then added dropwise. The reaction was refluxed for 30 minutes and then cooled to room temperature. The off-white solid was collected by vacuum filtration. The solid was washed successively with ethanol, water, ethanol and hexane.

步驟4:Os 1 Step 4 : Os 1

於250毫升三頸圓底燒瓶中,添加4.0克化合物B、3.3克OsH4 (PPh3 )3及125毫升N,N-二甲基甲醯胺。將混合物於氮氣下加熱至回流,歷經20小時。藉迴轉式蒸發移除溶劑,並使粗產物藉矽膠管柱層析純化,使用80%己烷/醋酸乙酯作為溶離劑。將含有所要產物之溶離份合併,及藉迴轉式蒸發移除溶劑。使產物自醋酸乙酯/己烷混合物結晶。產物係藉質譜及1 H NMR確認。In a 250 ml 3-neck round bottom flask, 4.0 g of Compound B, 3.3 g of OsH 4 (PPh 3 ) 3 and 125 ml of N,N-dimethylformamide were added. The mixture was heated to reflux under nitrogen for 20 hours. The solvent was removed by rotary evaporation and the crude material was purified using EtOAc EtOAc EtOAc EtOAc. The fractions containing the desired product are combined and the solvent is removed by rotary evaporation. The product was crystallized from a mixture of ethyl acetate / hexane. The product was confirmed by mass spectrometry and 1 H NMR.

關於在室溫下,於甲苯(經脫氣)中作成溶液之Os1之發射光譜係示於圖3中。The emission spectrum of Os1 which is a solution in toluene (degassed) at room temperature is shown in Fig. 3.

實例2Example 2

osmium 碳烯複合物OS2之合成Synthesis of carbene complex OS2 步驟1step 1

於CuBr2 (26.8克,120毫莫耳)在無水乙腈(500毫升)中之溶液內,在0℃下逐滴添加亞硝酸第三-丁酯(21.1毫升,160毫莫耳),接著逐滴添加3-胺基-5-溴基三氟化甲苯(25克,104.1毫莫耳)。將混合物在0℃下攪拌1.5小時,然後在室溫下16小時。接著,使混合物在真空中濃縮至其原先體積之一半,然後倒入1N HCl(620毫升)中。將此混合物以醚(400毫升)萃取。以1N HCl洗滌有機層,脫水乾燥(Na2 SO4 ),過濾,及在真空中濃縮。使殘留物於矽膠上藉急驟式管柱層析純化,使用己烷作為溶離劑,且獲得18.33克OS2-A (57.8%)。To a solution of CuBr 2 (26.8 g, 120 mmol) in anhydrous acetonitrile (500 mL), tris-butyl nitrite (21.1 mL, 160 mmol) was added dropwise at 0 ° C. 3-Amino-5-bromotrifluoride toluene (25 g, 104.1 mmol) was added dropwise. The mixture was stirred at 0 ° C for 1.5 hours and then at room temperature for 16 hours. The mixture was then concentrated in vacuo to one-half of its original volume and then poured into 1N HCl (EtOAc). This mixture was extracted with ether (400 mL). The organic layer was washed with 1N HCl, dried (Na 2 SO 4), filtered, and concentrated in vacuo. The residue was purified by flash chromatography on silica formula column using hexane as the eluent, to obtain 18.33 g and OS2-A (57.8%).

步驟2Step 2

於1000毫升圓底燒瓶中,添加13.33克化合物OS2-A 、12.43克苯并咪唑、1.668克碘化銅(I)、3.15克1,10-二氮菲、59.93克碳酸銫及500毫升N,N-二甲基甲醯胺。將反應混合物於氮氣下加熱至150℃,歷經60小時。於冷卻至室溫後;過濾反應物,並藉迴轉式蒸發自濾液移除溶劑。使粗產物藉矽膠管柱層析,使用95%二氯甲烷/醋酸乙酯混合物純化。藉真空過濾收集產物OS2-B (10克,60%),為白色固體。In a 1000 ml round bottom flask, 13.33 g of compound OS2-A , 12.43 g of benzimidazole, 1.668 g of copper (I) iodide, 3.15 g of 1,10-diazaphenanthrene, 59.93 g of cesium carbonate and 500 ml of N were added. N-dimethylformamide. The reaction mixture was heated to 150 ° C under nitrogen for 60 hours. After cooling to room temperature; the reaction was filtered and the solvent was removed from the filtrate by rotary evaporation. The crude product was purified by column chromatography eluting with EtOAc/EtOAc. The product OS2-B (10 g, 60%) was obtained as a white solid.

步驟3Step 3

於1000毫升圓底燒瓶中,添加8克化合物OS2-B 、60克碘甲烷及500毫升N,N-二甲基甲醯胺。將混合物加熱至41℃,歷經70小時。添加200毫升甲苯,以誘發沉澱作用。過濾混合物,並將固體以醚洗滌,而產生9克OS2-C (64%)。In a 1000 ml round bottom flask, 8 g of compound OS2-B , 60 g of methyl iodide and 500 ml of N,N-dimethylformamide were added. The mixture was heated to 41 ° C for 70 hours. 200 ml of toluene was added to induce precipitation. The mixture was filtered, and the solid was washed with ether, to produce 9 g OS2-C (64%).

步驟4Step 4

於50毫升圓底燒瓶中,添加310毫克化合物OS2-C 、230毫克OsH4 (PPh3 )3 及35毫升N,N-二甲基甲醯胺。將混合物於氮氣下加熱至150℃,歷經3小時。將反應混合物傾倒至水(150毫升)中,並藉由醚萃取。藉迴轉式蒸發移除醚。將殘留物藉管柱層析純化(SiO2 ,80%己烷/醋酸乙酯),而產生OS2In a 50 ml round bottom flask, 310 mg of the compound OS2-C , 230 mg of OsH 4 (PPh 3 ) 3 and 35 ml of N,N-dimethylformamide were added. The mixture was heated to 150 ° C under nitrogen for 3 hours. The reaction mixture was poured into water (150 ml) and extracted with ether. The ether is removed by rotary evaporation. The residue was purified by column chromatography (SiO 2, 80% hexanes / ethyl acetate) to yield OS2.

關於在室溫下,於甲苯(經脫氣)中作成溶液之Os2之發射光譜係示於圖4中。The emission spectrum of Os2 as a solution in toluene (degassed) at room temperature is shown in Fig. 4.

實例3Example 3 es-4之合成Synthesis of es-4

於單頸100毫升圓底燒瓶中,添加15克2,3二胺基萘與30毫升99%甲酸。將混合物加熱至回流,歷經3小時。以醋酸乙酯與水萃取混合物。拋棄有機相,並以氫氧化鈉使水相中和。過濾所形成之固體,且以水與異丙醇洗滌。使所要之產物藉真空蒸餾純化,而產生12克萘甲醯胺唑,為白色固體。In a single neck 100 ml round bottom flask, 15 grams of 2,3 diaminonaphthalene and 30 milliliters of 99% formic acid were added. The mixture was heated to reflux for 3 hours. The mixture was extracted with ethyl acetate and water. The organic phase was discarded and the aqueous phase was neutralized with sodium hydroxide. The solid formed was filtered and washed with water and isopropyl alcohol. The desired product was purified by vacuum distillation to yield 12 g of naphthylcarbazole as a white solid.

於三頸500毫升圓底燒瓶中,添加10克萘甲醯胺唑、8.9克1,3-二碘苯、0.56克碘化銅(I)、17.2克碳酸鉀、1.07克1,10-二氮菲及200毫升無水N,N-二甲基甲醯胺。將反應混合物於氮氣下加熱至回流,歷經18小時。於冷卻至室溫後,過濾反應物。將固體在水與異丙醇混合物中配成漿液。然後過濾此混合物,並以異丙醇洗滌,而產生10克白色固體。所要之產物係藉1 H NMR確認。In a three-neck 500 ml round bottom flask, 10 g of naphthylcarbazole, 8.9 g of 1,3-diiodobenzene, 0.56 g of copper iodide (I), 17.2 g of potassium carbonate, and 1.07 g of 1,10-two were added. Nitrofibrate and 200 ml of anhydrous N,N-dimethylformamide. The reaction mixture was heated to reflux under nitrogen for 18 h. After cooling to room temperature, the reaction was filtered. The solid was slurried in a mixture of water and isopropanol. The mixture was then filtered and washed with isopropanol to give 10 g of a white solid. The desired product was confirmed by 1 H NMR.

然後,使產物溶於500毫升NMP中。添加約30克碘甲烷,並將反應物加熱至約80℃,歷經36小時。使混合物冷卻,且過濾固體,接著以醋酸乙酯洗滌,而產生13克白色固體。The product was then dissolved in 500 ml of NMP. Approximately 30 grams of methyl iodide was added and the reaction was heated to about 80 °C over 36 hours. The mixture was allowed to cool and the solid was filtered then washed ethyl acetate.

於1升三頸圓底燒瓶中,添加2.0克六氯基鋨酸銨、8.4克三苯膦、120毫升水及300毫升第三-丁醇。將混合物於氮氣下加熱至回流,歷經24小時。於冷卻至室溫後,過濾反應混合物,並將固體以水,接著以乙醇洗滌。使綠色固體風乾,而產生4.8克OsCl2 (PPh3 )3In a 1-liter three-necked round bottom flask, 2.0 g of ammonium hexachloroantimonate, 8.4 g of triphenylphosphine, 120 ml of water and 300 ml of tri-butanol were added. The mixture was heated to reflux under nitrogen for 24 hours. After cooling to room temperature, the reaction mixture was filtered, and the solid was washed with water and then with ethanol. The green solid was allowed to air dry to give 4.8 g of OsCl 2 (PPh 3 ) 3 .

於500毫升三頸圓底燒瓶中,添加5克氧化銀、5.0克es4i-3 及約250毫升無水N,N-二甲基甲醯胺。將混合物於氮氣下加熱至60℃,歷經1.5小時。於冷卻至室溫後,將3.75克OsCl2 (PPh3 )3 添加至燒瓶中。將混合物加熱至100℃,歷經18小時,然後在120℃下加熱6小時。添加二氯甲烷,並過濾固體。將水添加至濾液中,且以二氯甲烷萃取水層三次。使合併之有機離份以硫酸鎂脫水乾燥,過濾,及在減壓下濃縮。使此物質藉矽膠管柱層析純化,使用30%己烷/二氯甲烷作為溶離劑。合併所要之溶離份,及移除溶劑,而得es-4 ,接著使其自二氯甲烷/己烷結晶。In a 500 ml three-necked round bottom flask, 5 g of silver oxide, 5.0 g of es4i-3 and about 250 ml of anhydrous N,N-dimethylformamide were added. The mixture was heated to 60 ° C under nitrogen for 1.5 hours. After cooling to room temperature, 3.75 g of OsCl 2 (PPh 3 ) 3 was added to the flask. The mixture was heated to 100 ° C for 18 hours and then heated at 120 ° C for 6 hours. Dichloromethane was added and the solid was filtered. Water was added to the filtrate and the aqueous layer was extracted three times with dichloromethane. The combined organic fractions were dried with MgSO4, filtered and evaporated. This material was purified by column chromatography using 30% hexanes/dichloromethane as solvent. The desired fractions were combined and the solvent was removed to give s-4 , which was then crystallised from dichloromethane/hexane.

real 例4Example 4 es-7之製備Preparation of es-7

step 驟1Step 1

於三頸燒瓶中,添加3,5-二溴基苯甲腈(1克,3.86毫莫耳)、N1 -苯基苯-1,2-二胺(1.42克,7.72毫莫耳)、Pd2 (dba)3 (530毫克,0.58毫莫耳)、(2-聯苯基)二-第三-丁基膦(345.5毫克,1.158毫莫耳)、第三-丁醇鈉(1克,10.81毫莫耳)及無水甲苯(70毫升)。將反應混合物在室溫中,於氮氣下攪拌24小時。使反應混合物藉由冰浴冷卻至0℃,並將1M HCl(10.81毫升)在醚中之溶液添加至反應混合物中。過濾反應混合物,且收集沉澱物,及使用於下一步驟,無需進一步純化。In a three-necked flask, 3,5-dibromobenzonitrile (1 g, 3.86 mmol), N 1 -phenylbenzene-1,2-diamine (1.42 g, 7.72 mmol), Pd 2 (dba) 3 (530 mg, 0.58 mmol), (2-biphenyl) di-tert-butylphosphine (345.5 mg, 1.158 mmol), sodium tris-butoxide (1 g) , 10.81 mmol) and anhydrous toluene (70 mL). The reaction mixture was stirred at room temperature under nitrogen for 24 h. The reaction mixture was cooled to 0.degree. C. by ice bath, and a solution of 1M HCl (10.81 ml) in ether was added to the mixture. The reaction mixture was filtered and the precipitate was collected and used in the next step without further purification.

步驟2Step 2

於250毫升圓底燒瓶中,添加得自步驟1之產物(1.8克,3.86毫莫耳)、原甲酸三乙酯(125毫升)、濃HCl(1毫升)及甲酸(數滴)。將反應物在80℃下加熱16小時。使反應混合物在真空下濃縮,並使殘留物接受管柱層析(100%二氯甲烷至13%甲醇在二氯甲烷中),獲得所要之配位體鹽(1.082克,50%)。The product from Step 1 (1.8 g, 3.86 mmol), triethyl orthoformate (125 mL), cone. HCl (1 mL) and formic acid (s) were added to a 250 mL round bottom flask. The reaction was heated at 80 °C for 16 hours. The reaction mixture was concentrated in vacuo and EtOAc EtOAcjjjjjjj

步驟3Step 3

於100毫升圓底燒瓶中,添加配位體(1.12克,2毫莫耳)、氧化銀(1.39克,6毫莫耳)、(PPh3 )3 OsCl2 (1.048克,1毫莫耳)及無水DMF(50毫升)。將反應物於氮氣下加熱至150℃,歷經1.5小時。過濾反應混合物,並將沉澱物以醋酸乙酯洗滌。使濾液濃縮,且使其接受管柱層析(SiO2 ,以三乙胺預處理,在己烷中之5% CH2 Cl2 至在己烷中之50% CH2 Cl2 ),獲得es-7 (72毫克,6%)。In a 100 ml round bottom flask, add ligand (1.12 g, 2 mmol), silver oxide (1.39 g, 6 mmol), (PPh 3 ) 3 OsCl 2 (1.048 g, 1 mmol) And anhydrous DMF (50 ml). The reaction was heated to 150 ° C under nitrogen for 1.5 h. The reaction mixture was filtered, and the precipitate was washed ethyl acetate. The filtrate was concentrated, and to accept column chromatography (SiO 2, triethylamine pretreated in hexanes of 5% CH 2 Cl 2 in hexanes to of 50% CH 2 Cl 2), to obtain es -7 (72 mg, 6%).

實例5Example 5 es-8之合成Synthesis of es-8

於500毫升圓底燒瓶中,放置3,5-二溴基苯甲腈(10.0克,38.3毫莫耳)、4-氮苯并咪唑(10.96克,92.0毫莫耳)、碘化銅(I)(1.46克,7.7毫莫耳)、1,10二氮菲(1.39克7.7毫莫耳)與碳酸鉀(11.1克,80.4毫莫耳)及無水二甲基甲醯胺(100毫升)。將其在125℃下攪拌20小時。然後,使混合物冷卻至環境溫度,並過濾。將固體以19:1二氯甲烷-甲醇(50毫升)洗滌。在真空中濃縮濾液,且使粗產物層析(矽膠),使用19:1:0.1二氯甲烷-甲醇-氫氧化銨之流動相,獲得2.00克(15.5%)標的化合物,為淡粉紅色固體。1 H NMR(DMSO-d6)δ9.10(s,2H),9.09(t,1H),8.64(s,2H),8.47(d,2H),8.25(d,2H),7.44(dd,2H). MS(EI+)337.In a 500 ml round bottom flask, 3,5-dibromobenzonitrile (10.0 g, 38.3 mmol), 4-nitrobenzimidazole (10.96 g, 92.0 mmol), copper iodide (I) (1.46 g, 7.7 mmol), 1,10 phenanthrene (1.39 g 7.7 mmol) with potassium carbonate (11.1 g, 80.4 mmol) and anhydrous dimethylformamide (100 mL). It was stirred at 125 ° C for 20 hours. The mixture was then allowed to cool to ambient temperature and filtered. The solid was washed with 19:1 dichloromethane-methanol (50 mL). The filtrate was concentrated in vacuo and the crude material was purified (jjjjjjjjjjjjjjjjjjjjjjj . 1 H NMR (DMSO-d6) δ 9.10 (s, 2H), 9.09 (t, 1H), 8.64 (s, 2H), 8.47 (d, 2H), 8.25 (d, 2H), 7.44 (dd, 2H) ). MS(EI+)337.

於250毫升圓底燒瓶中,添加3,5-二(3H-咪唑并[4,5-b]吡啶-3-基)苯甲腈(2.35克,6.97毫莫耳)、無水二甲基甲醯胺(80毫升)及碘化正-己烷(15.3毫升,104.6毫莫耳)。將其在150℃下攪拌20小時,然後在真空中濃縮。添加醋酸乙酯(100毫升),並將固體過濾,且自甲醇再結晶,而得3.83克(72%)配位基鹽,為淡黃色粉末。1 H NMR(DMF-d7)δ11.0(s,2H),9.50(t,1H),9.03(m,3H),8.92(m,2H),4.93(t,4H),2.20(m,4H),1.56(m,4H),0.88(t,6H)。按照類似用以製備es-7 之程序,使配位體鹽轉化成es-8In a 250 ml round bottom flask, 3,5-bis(3H-imidazo[4,5-b]pyridin-3-yl)benzonitrile (2.35 g, 6.97 mmol), anhydrous dimethyl group was added. Indoleamine (80 ml) and n-hexane iodide (15.3 ml, 104.6 mmol). It was stirred at 150 ° C for 20 hours and then concentrated in vacuo. Ethyl acetate (100 mL) was added and the solid was filtered and crystallised from methanol to give 3. <RTIgt; 1 H NMR (DMF-d7) δ 11.0 (s, 2H), 9.50 (t, 1H), 9.03 (m, 3H), 8.92 (m, 2H), 4.93 (t, 4H), 2.20 (m, 4H) ), 1.56 (m, 4H), 0.88 (t, 6H). The ligand salt was converted to es-8 following a procedure similar to that used to prepare es-7 .

實例6Example 6 es-9之合成Synthesis of es-9

step 驟1Step 1

於三頸燒瓶中,添加3,5-二溴基苯甲腈(50克,0.19莫耳)、1,2,4-三唑(26.5克,0.38莫耳)、碘化銅(3.62克,0.019莫耳)、反式-N,N'-二甲基環己烷-1,2-二胺(5.4克,0.038莫耳)、磷酸鉀(無水,161.3克,0.76莫耳)及無水DMF(600毫升)。將反應混合物於氮氣下攪拌,並在110℃下加熱24小時,接著,使其冷卻至室溫。過濾固體,且以DMF洗滌。使合併之濾液與洗液在真空下濃縮。將殘留固體以醋酸乙酯洗滌,及藉昇華純化,而得所要之產物。In a three-necked flask, 3,5-dibromobenzonitrile (50 g, 0.19 mol), 1,2,4-triazole (26.5 g, 0.38 mol), copper iodide (3.62 g, 0.019 mol), trans-N,N'-dimethylcyclohexane-1,2-diamine (5.4 g, 0.038 mol), potassium phosphate (anhydrous, 161.3 g, 0.76 mol) and anhydrous DMF (600 ml). The reaction mixture was stirred under nitrogen and heated at 110 ° C for 24 hours, then cooled to room temperature. The solid was filtered and washed with DMF. The combined filtrate and washings were concentrated under vacuum. The residual solid was washed with ethyl acetate and purified by sublimation to give the desired product.

步驟2Step 2

於1升圓底燒瓶中,添加得自步驟1之產物(16.2克,0.068莫耳)、1-碘基己烷(144.2克,0.68莫耳)及無水DMF(350毫升)。將反應混合物於150℃(浴溫)下之油浴中加熱18小時。使其冷卻,及在真空下濃縮。使殘留固體自甲醇再結晶,而產生配位體(27.6克,62%)。The product from Step 1 (16.2 g, 0.068 mol), 1-iodohexane (144.2 g, 0.68 mol) and anhydrous DMF (350 mL) were then weighed from a 1 liter round bottom flask. The reaction mixture was heated in an oil bath at 150 ° C (bath temperature) for 18 hours. It was allowed to cool and concentrated under vacuum. The residual solid was recrystallized from methanol to give a ligand (27.6 g, 62%).

步驟3Step 3

於500毫升圓底燒瓶中,添加配位體(11.18克,16.89毫莫耳)、氧化銀(7.83克,33.78毫莫耳)、(PPh3 )3 OsCl2 (8.85克,8.44毫莫耳)及無水DMF(300毫升)。將反應物於氮氣下加熱至150℃,歷經1小時。過濾反應混合物,並將沉澱物以二氯甲烷洗滌。濃縮濾液,且使其接受管柱層析(SiO2 ,以三乙胺預處理,在己烷中之25%CH2 Cl2 至在己烷中之50%CH2 Cl2 ),而得es-9 (9l0毫克,22%)。In a 500 ml round bottom flask, add ligand (11.18 g, 16.89 mmol), silver oxide (7.83 g, 33.78 mmol), (PPh 3 ) 3 OsCl 2 (8.85 g, 8.44 mmol) And anhydrous DMF (300 ml). The reaction was heated to 150 ° C under nitrogen for 1 hour. The reaction mixture was filtered and the precipitate was washed with dichloromethane. The filtrate was concentrated, and to accept column chromatography (SiO 2, triethylamine pretreated in hexanes of 25% CH 2 Cl 2 in hexanes to of 50% CH 2 Cl 2), to give es -9 (9l0 mg, 22%).

化合物es-l、es-2、es-3、es-5es-6 係藉由類似上文關於化合物es-4、es-7、es-8es-9 所予之程序製成。The compounds es-l, es-2, es-3, es-5 and es-6 were prepared by procedures analogous to those described above for the compounds es-4, es-7, es-8 and es-9 .

實例7Example 7

步驟1:於500毫升三頸圓底燒瓶中,添加1,3-二碘苯(10克,0.03莫耳)、肼基甲酸第三-丁酯(9.5克,0.072莫耳)、碘化銅(0.57克,0.003莫耳)、1,10-二氮菲(2.16克,0.012莫耳)、碳酸銫(27.36克,0.084莫耳)及400毫升無水DMF。將反應混合物加熱至80℃,歷經21小時。將反應混合物以400毫升水稀釋,並以二氯甲烷萃取。使有機層濃縮至乾涸,且藉管柱層析純化,而產生所要之化合物(11.3克)。Step 1: In a 500 ml 3-neck round bottom flask, add 1,3-diiodobenzene (10 g, 0.03 mol), tris-butyl carbazate (9.5 g, 0.072 mol), copper iodide. (0.57 g, 0.003 mol), 1,10- phenanthroline (2.16 g, 0.012 mol), cesium carbonate (27.36 g, 0.084 mol) and 400 ml of anhydrous DMF. The reaction mixture was heated to 80 ° C for 21 hours. The reaction mixture was diluted with 400 mL of water and extracted with dichloromethane. The organic layer was concentrated to dryness and purified eluting elut elut

步驟2:於500毫升三頸圓底燒瓶中,添加苯胺(25.4克,0.27莫耳)、三乙胺(27.69克,0.27莫耳)及370毫升THF。在0℃下逐滴添加50克氯化2,4,6-三甲基苯甲醯。將反應混合物攪拌過夜,產生60克所要之產物。Step 2: In a 500 mL 3-neck round bottom flask, aniline (25.4 g, 0.27 mol), triethylamine (27.69 g, 0.27 mol) and 370 ml of THF were added. 50 g of 2,4,6-trimethylbenzimid chloride was added dropwise at 0 °C. The reaction mixture was stirred overnight to yield 60 g of desired material.

步驟3:使得自步驟2之2克醯胺溶於7毫升二氯化亞硫醯中,並在70℃下加熱1小時。使反應混合物濃縮至乾涸,且用於下一步驟。Step 3: 2 g of decylamine from step 2 was dissolved in 7 ml of sulfite dichloride and heated at 70 ° C for 1 hour. The reaction mixture was concentrated to dryness and used in the next step.

步驟4:使得自步驟3之氯化醯亞胺溶於5毫升THF中。於-10℃下逐滴添加Boc-保護之肼(1.41克,4.179毫莫耳)與三乙胺(1.16毫升,8.36毫莫耳)之溶液。然後,將反應物在室溫下攪拌過夜。以二氯甲烷稀釋反應混合物,並以0.1N HCl與飽和碳酸鈉洗滌。使有機層濃縮至乾涸,且使其接受管柱層析,而產生所要之化合物(1.74克)。Step 4: The ruthenium chloride imine from step 3 was dissolved in 5 ml of THF. A solution of Boc-protected hydrazine (1.41 g, 4.179 mmol) and triethylamine (1.16 mL, 8.36 mmol) was added dropwise at -10 °C. The reaction was then stirred at room temperature overnight. The reaction mixture was diluted with dichloromethane and washed with 0.1N EtOAc and sat. The organic layer was concentrated to dryness and taken to a column chromatography to give the desired compound (1.74 g).

步驟5:使得自步驟4之1.74克中間物溶於二氧陸圜中之4N HCl內;將混合物於室溫下攪拌2.5小時。然後,使反應混合物蒸發至乾涸,且用於下一步驟。Step 5: 1.74 g of the intermediate from step 4 was dissolved in 4N HCl in dioxane; the mixture was stirred at room temperature for 2.5 hours. The reaction mixture was then evaporated to dryness and used in the next step.

步驟6:將得自步驟5之中間物與原甲酸三乙酯(40毫升)、HCl(2毫升)及數滴甲酸混合。將反應混合物加熱至80℃過夜。使反應混合物濃縮至1/3體積,以誘發沉澱作用。過濾反應混合物,而產生所要之產物(1.1克)。Step 6: The intermediate from Step 5 was combined with triethyl orthoformate (40 mL), HCl (2 mL) and a few drops of formic acid. The reaction mixture was heated to 80 ° C overnight. The reaction mixture was concentrated to 1/3 volume to induce precipitation. The reaction mixture was filtered to give the desired product (1.

步驟7:使得自步驟6之1克中間物溶於無水甲醇(40毫升)中,並添加0.5N甲醇鈉溶液(6.53毫升,3.26毫莫耳),且濾出產物(950毫克)。Step 7: One gram of the intermediate from Step 6 was dissolved in dry methanol (40 mL) and 0.5N sodium methoxide solution (6.53 mL, 3.26 mmol) was added and the product (950 mg) was filtered.

步驟8:於500毫升三頸圓底燒瓶中,添加得自步驟7之配位體(6.64克,9.98毫莫耳)、Cl2 Os(PPh3 )3 (2.6克,2.49毫莫耳)及間-二甲苯(150毫升)。使反應混合物完全脫氣,並加熱至回流過夜。過濾反應混合物,且使濾液濃縮至乾涸。使殘留物接受管柱層析,而產生1.31克Os複合物。Step 8: In a 500 ml 3-neck round bottom flask, add the ligand from step 7 (6.64 g, 9.98 mmol), Cl 2 Os (PPh 3 ) 3 (2.6 g, 2.49 mmol) and M-xylene (150 ml). The reaction mixture was completely degassed and heated to reflux overnight. The reaction mixture was filtered and the filtrate was concentrated to dryness. The residue was subjected to column chromatography to yield 1.31 g of Os complex.

實例8Example 8

包含根據本發明之磷光發射材料之OLED可根據由Lin等人在美國專利申請案號11/241,981中,及由Tung等人在美國專利申請案號11/242,025中所述之程序製造。OLEDs comprising a phosphorescent emissive material according to the present invention can be made according to the procedures described in U.S. Patent Application Serial No. 11/241,981, the entire disclosure of which is incorporated herein by reference.

起始基板為購自柯羅拉多(Colorado)概念塗料LLC,以80毫微米厚度之氧化銦錫(ITO)塗覆且薄片電阻<25歐姆/方形之玻璃基板。所有後續薄膜係在<10-6 托之壓力下,藉由熱蒸發沉積。陰極包含10之LiF,接著為1,000之Al。所有裝置均於製造之後,立即在氮手套箱(<1ppm之H2 O與O2 )中,使用玻璃蓋包覆,以環氧樹脂密封,並將水份吸氣劑摻入包裝之內部。The starting substrate was a glass substrate available from Colorado Concept Paint LLC, coated with indium tin oxide (ITO) at a thickness of 80 nm and having a sheet resistance of <25 ohms/square. All subsequent films were deposited by thermal evaporation at a pressure of <10 -6 Torr. Cathode contains 10 LiF, followed by 1,000 Al. All devices were immediately coated in a nitrogen glove box (<1 ppm H 2 O and O 2 ) with a glass cover, sealed with epoxy resin, and the moisture getter was incorporated into the interior of the package.

在裝置製造之前,將基板在肥皂溶液中,藉由音振清潔,以去離子水沖洗,並在異丙醇中煮沸。於清潔程序之後,使基板在N2 流動下乾燥,接著為O2 電漿與UV臭氧處理。OLED之有機層係在室溫下,於<10-6 托之基本壓力下,藉由熱蒸發相繼地自以電阻方式加熱之氧化鋁坩堝沉積至基材上。單一成份層之速率係以一個位於接近基板之Inficon厚度監控器加以控制。關於各材料之特定速率係示於下表1中。關於兩成份發射層,摻雜劑之速率係以位於接近摻雜劑蒸發來源之另一種晶體監控器加以控制。該其他監控器並未曝露至主體之主要流動。Prior to device fabrication, the substrate was cleaned in a soap solution by sonication, rinsed with deionized water, and boiled in isopropanol. After the cleaning procedure on the substrate is dried under N 2 flow followed by O 2 plasma and UV ozone treatment. The organic layer of the OLED is deposited on the substrate from the resistively heated alumina crucible by thermal evaporation at room temperature at a base pressure of <10 -6 Torr. The rate of the single component layer is controlled by an Inficon thickness monitor located close to the substrate. The specific rates for each material are shown in Table 1 below. With respect to the two component emissive layers, the rate of dopant is controlled by another crystal monitor located near the source of dopant evaporation. This other monitor is not exposed to the main flow of the subject.

mCBP與HPT係個別具有下列結構:The mCBP and HPT lines individually have the following structure:

裝置係經製成,具有表2中所提出之下列裝置結構。摻雜劑濃度係以重量%表示。The apparatus was fabricated and had the following device configurations as set forth in Table 2. The dopant concentration is expressed in % by weight.

關於表2中所提出裝置之裝置特徵係經度量,且在圖5至69中提出。The device characteristics for the device proposed in Table 2 are measured and are presented in Figures 5 to 69.

實例9Example 9

根據本發明,包含得自實例7(D356)之磷光發射材料之OLED係經製造。此裝置結構為:In accordance with the present invention, an OLED comprising a phosphorescent emissive material from Example 7 (D356) is fabricated. The structure of this device is:

ITO(80毫微米)/HIL4(10毫微米)/NPD(30毫微米)/mCP:D356,9%(30毫微米)/mCP(X毫微米)/Alq3 (40毫微米)/LiF/Al。參閱圖70。關於此等裝置之裝置特徵係經度量,且在圖71至75中提出。ITO (80 nm) / HIL4 (10 nm) / NPD (30 nm) / mCP: D356, 9% (30 nm) / mCP (X nm) / Alq 3 (40 nm) / LiF / Al. See Figure 70. Device features for such devices are measured and are presented in Figures 71-75.

雖然本發明係針對特定實例與較佳具體實施例加以描述,但應明瞭的是,本發明並不限於此等實例與具體實施例。因此,如所請求之本發明係包括得自本文中所述特定實例與較佳具體實施例之變型,如熟諳此藝者所明瞭者。Although the present invention has been described with respect to the specific embodiments and preferred embodiments thereof, it is understood that the invention is not limited to the examples and specific embodiments. Therefore, the present invention as claimed is intended to include variations of the specific examples and preferred embodiments described herein, as those skilled in the art.

100...裝置100. . . Device

115...陽極115. . . anode

110...基板110. . . Substrate

120...空穴注入層120. . . Hole injection layer

125...空穴輸送層125. . . Hole transport layer

130...電子阻斷層130. . . Electronic blocking layer

135...發射層135. . . Emissive layer

140...空穴阻斷層140. . . Hole blocking layer

145...電子輸送層145. . . Electron transport layer

150...電子注入層150. . . Electron injection layer

155...保護層155. . . The protective layer

160...陰極160. . . cathode

162...第一個導電層162. . . First conductive layer

164...第二個導電層164. . . Second conductive layer

200...裝置200. . . Device

210...基板210. . . Substrate

215...陰極215. . . cathode

220...發射層220. . . Emissive layer

225...空穴輸送層225. . . Hole transport layer

230...陽極230. . . anode

圖1顯示有機發光裝置,具有個別電子輸送、空穴輸送及發射層以及其他層。Figure 1 shows an organic light-emitting device having individual electron transport, hole transport and emission layers, and other layers.

圖2顯示倒置有機發光裝置,其未具有個別電子輸送層。Figure 2 shows an inverted organic light emitting device that does not have individual electron transport layers.

圖3顯示關於裝置DA、DB、DC及DD之電致發光光譜(以任意單位表示)。Figure 3 shows the electroluminescence spectra (expressed in arbitrary units) for devices DA, DB, DC and DD.

圖4顯示關於裝置DA、DB、DC及DD之外部量子效率對發光度之圖。Figure 4 shows a plot of external quantum efficiency vs. luminosity for devices DA, DB, DC, and DD.

圖5顯示關於裝置DA、DB、DC及DD之電流密度對電壓之圖。Figure 5 shows a plot of current density vs. voltage for devices DA, DB, DC, and DD.

圖6顯示關於裝置DA、DB及DD之正規化發光度對時間之圖。Figure 6 shows a plot of normalized luminosity versus time for devices DA, DB and DD.

圖7顯示關於裝置CA、CB、CC、CD、CE及CF之電流密度對電壓之圖。Figure 7 shows a plot of current density versus voltage for devices CA, CB, CC, CD, CE, and CF.

圖8顯示關於裝置CA、CB、CC、CD、CE及CF之外部量子效率對電流密度之圖。Figure 8 shows a plot of external quantum efficiency versus current density for devices CA, CB, CC, CD, CE, and CF.

圖9顯示關於裝置CA、CB、CC、CD、CE及CF之電致發光光譜。Figure 9 shows the electroluminescence spectra for devices CA, CB, CC, CD, CE and CF.

圖10顯示關於裝置CB、CD、CE及CF之正規化發光度對時間。Figure 10 shows the normalized luminosity versus time for devices CB, CD, CE, and CF.

圖11顯示關於裝置CG、CH、CI、CJ、CK及CL之電流密度對電壓之圖。Figure 11 shows a plot of current density versus voltage for devices CG, CH, CI, CJ, CK, and CL.

圖12顯示關於裝置CG、CH、CI、CJ、CK及CL之外部量子效率對電流密度之圖。Figure 12 shows a plot of external quantum efficiency vs. current density for devices CG, CH, CI, CJ, CK, and CL.

圖13顯示關於裝置CG、CH、CI、CJ、CK及CL之電致發光光譜。Figure 13 shows the electroluminescence spectra for devices CG, CH, CI, CJ, CK and CL.

圖14顯示關於裝置CH與CK之正規化發光度對時間之圖。Figure 14 shows a plot of normalized luminosity versus time for devices CH and CK.

圖15顯示關於裝置AAA與AAB之外部量子效率對電流密度之圖。Figure 15 shows a plot of external quantum efficiency vs. current density for devices AAA and AAB.

圖16顯示關於裝置AAA與AAB之電致發光光譜。Figure 16 shows the electroluminescence spectra for devices AAA and AAB.

圖17顯示關於裝置AAA與AAB之電流密度對電壓之圖。Figure 17 shows a plot of current density versus voltage for devices AAA and AAB.

圖18顯示關於裝置AAA與AAB之正規化發光度對時間之圖。Figure 18 shows a plot of normalized luminosity versus time for devices AAA and AAB.

圖19顯示關於裝置:HIL4[10毫微米]/NPD[30毫微米]/CBP:es-5,6%[30毫微米]/2,3,6,7,10,11-六苯基苯并菲[5毫微米]/Alq[45毫微米]/LiF[0.5毫微米]/Al[100毫微米]之電流密度對電壓之圖。Figure 19 shows the device: HIL4 [10 nm] / NPD [30 nm] / CBP: es-5, 6% [30 nm] / 2, 3, 6, 7, 10, 11-hexaphenylbenzene A plot of current density versus voltage for phenanthrene [5 nm] / Alq [45 nm] / LiF [0.5 nm] / Al [100 nm].

圖20顯示關於裝置:HIL4[10毫微米]/NPD[30毫微米]/CBP:es-5,6%[30毫微米]/2,3,6,7,10,11-六苯基苯并菲[5毫微米]/Alq[45毫微米]/LiF[0.5毫微米]/Al[100毫微米]之外部量子效率對發光度之圖。Figure 20 shows the device: HIL4 [10 nm] / NPD [30 nm] / CBP: es-5, 6% [30 nm] / 2, 3, 6, 7, 10, 11-hexaphenylbenzene An external quantum efficiency vs. luminosity diagram of phenanthrene [5 nm] / Alq [45 nm] / LiF [0.5 nm] / Al [100 nm].

圖21顯示關於裝置:HIL4[10毫微米]/NPD[30毫微米]/CBP:es-5,6%[30毫微米]/2,3,6,7,10,11-六苯基苯并菲[5毫微米]/Alq[45毫微米]/LiF[0.5毫微米]/Al[100毫微米]之正規化發光度對時間之圖。Figure 21 shows the device: HIL4 [10 nm] / NPD [30 nm] / CBP: es-5, 6% [30 nm] / 2, 3, 6, 7, 10, 11-hexaphenylbenzene A graph of normalized luminosity versus time for phenanthrene [5 nm] / Alq [45 nm] / LiF [0.5 nm] / Al [100 nm].

圖22顯示裝置:HIL4[10毫微米]/NPD[30毫微米]/CBP:es-5,6%[30毫微米]/2,3,6,7,10,11-六苯基苯并菲[5毫微米]/Alq[45毫微米]/LiF[0.5毫微米]/Al[100毫微米]之電致發光光譜。Figure 22 shows the device: HIL4 [10 nm] / NPD [30 nm] / CBP: es-5, 6% [30 nm] / 2, 3, 6, 7, 10, 11-hexaphenylbenzo Electroluminescence spectrum of phenanthrene [5 nm] / Alq [45 nm] / LiF [0.5 nm] / Al [100 nm].

圖23顯示關於裝置:HIL4[10毫微米]/NPD[30毫微米]/CBP:es-5,10%[30毫微米]/2,3,6,7,10,11-六苯基苯并菲[5毫微米]/Alq[45毫微米]/LiF[0.5毫微米]/Al[100毫微米]之電流密度對電壓之圖。Figure 23 shows the device: HIL4 [10 nm] / NPD [30 nm] / CBP: es-5, 10% [30 nm] / 2, 3, 6, 7, 10, 11-hexaphenylbenzene A plot of current density versus voltage for phenanthrene [5 nm] / Alq [45 nm] / LiF [0.5 nm] / Al [100 nm].

圖24顯示關於裝置:HIL4[10毫微米]/NPD[30毫微米]/CBP:es-5,10%[30毫微米]/2,3,6,7,10,11-六苯基苯并菲[5毫微米]/Alq[45毫微米]/LiF[0.5毫微米]/Al[100毫微米]之外部量子效率對發光度之圖。Figure 24 shows the device: HIL4 [10 nm] / NPD [30 nm] / CBP: es-5, 10% [30 nm] / 2, 3, 6, 7, 10, 11-hexaphenylbenzene An external quantum efficiency vs. luminosity diagram of phenanthrene [5 nm] / Alq [45 nm] / LiF [0.5 nm] / Al [100 nm].

圖25顯示關於裝置:HIL4[10毫微米]/NPD[30毫微米]/CBP:es-5,10%[30毫微米]/2,3,6,7,10,11-六苯基苯并菲[5毫微米]/Alq[45毫微米]/LiF[0.5毫微米]/Al[100毫微米]之正規化發光度對時間之圖。Figure 25 shows the device: HIL4 [10 nm] / NPD [30 nm] / CBP: es-5, 10% [30 nm] / 2, 3, 6, 7, 10, 11-hexaphenylbenzene A graph of normalized luminosity versus time for phenanthrene [5 nm] / Alq [45 nm] / LiF [0.5 nm] / Al [100 nm].

圖26顯示裝置:HIL4[10毫微米]/NPD[30毫微米]/CBP:es-5,10%[30毫微米]/2,3,6,7,10,11-六苯基苯并菲[5毫微米]/Alq[45毫微米]/LiF[0.5毫微米]/Al[100毫微米]之電致發光光譜。Figure 26 shows the device: HIL4 [10 nm] / NPD [30 nm] / CBP: es-5, 10% [30 nm] / 2, 3, 6, 7, 10, 11-hexaphenylbenzo Electroluminescence spectrum of phenanthrene [5 nm] / Alq [45 nm] / LiF [0.5 nm] / Al [100 nm].

圖27顯示關於裝置:CuPc[10毫微米]/NPD[30毫微米]/CBP:es-5,6%[30毫微米]/2,3,6,7,10,11-六苯基苯并菲[5毫微米]/Alq[45毫微米]/LiF[0.5毫微米]/Al[100毫微米]之電流密度對電壓之圖。Figure 27 shows the device: CuPc [10 nm] / NPD [30 nm] / CBP: es-5, 6% [30 nm] / 2, 3, 6, 7, 10, 11-hexaphenylbenzene A plot of current density versus voltage for phenanthrene [5 nm] / Alq [45 nm] / LiF [0.5 nm] / Al [100 nm].

圖28顯示關於裝置:CuPc[10毫微米]/NPD[30毫微米]/CBP:es-5,6%[30毫微米]/2,3,6,7,10,11-六苯基苯并菲[5毫微米]/Alq[45毫微米]/LiF[0.5毫微米]/Al[100毫微米]之外部量子效率對發光度之圖。Figure 28 shows the device: CuPc [10 nm] / NPD [30 nm] / CBP: es-5, 6% [30 nm] / 2, 3, 6, 7, 10, 11-hexaphenylbenzene An external quantum efficiency vs. luminosity diagram of phenanthrene [5 nm] / Alq [45 nm] / LiF [0.5 nm] / Al [100 nm].

圖29顯示關於裝置:CuPc[10毫微米]/NPD[30毫微米]/CBP:es-5,6%[30毫微米]/2,3,6,7,10,11-六苯基苯并菲[5毫微米]/Alq[45毫微米]/LiF[0.5毫微米]/Al[100毫微米]之正規化發光度對時間之圖。Figure 29 shows the device: CuPc [10 nm] / NPD [30 nm] / CBP: es-5, 6% [30 nm] / 2, 3, 6, 7, 10, 11-hexaphenylbenzene A graph of normalized luminosity versus time for phenanthrene [5 nm] / Alq [45 nm] / LiF [0.5 nm] / Al [100 nm].

圖30顯示裝置:CuPc[10毫微米]/NPD[30毫微米]/CBP:es-5,6%[30毫微米]/2,3,6,7,10,11-六苯基苯并菲[5毫微米]/Alq[45毫微米]/LiF[0,5毫微米]/Al[100毫微米]之電致發光光譜。Figure 30 shows the device: CuPc [10 nm] / NPD [30 nm] / CBP: es-5, 6% [30 nm] / 2, 3, 6, 7, 10, 11-hexaphenylbenzo Electroluminescence spectrum of phenanthrene [5 nm] / Alq [45 nm] / LiF [0, 5 nm] / Al [100 nm].

圖31顯示關於裝置:CuPc[10毫微米]/NPD[30毫微米]/CBP:es-5,10%[30毫微米]/2,3,6,7,10,11-六苯基苯并菲[5毫微米]/Alq[45毫微米]/LiF[0.5毫微米]/Al[100毫微米]之電流密度對電壓之圖。Figure 31 shows the device: CuPc [10 nm] / NPD [30 nm] / CBP: es-5, 10% [30 nm] / 2, 3, 6, 7, 10, 11-hexaphenylbenzene A plot of current density versus voltage for phenanthrene [5 nm] / Alq [45 nm] / LiF [0.5 nm] / Al [100 nm].

圖32顯示關於裝置:CuPc[10毫微米]/NPD[30毫微米]/CBP:es-5,10%[30毫微米]/2,3,6,7,10,11-六苯基苯并菲[5毫微米]/Alq[45毫微米]/LiF[0.5毫微米]/Al[100毫微米]之外部量子效率對發光度之圖。Figure 32 shows the device: CuPc [10 nm] / NPD [30 nm] / CBP: es-5, 10% [30 nm] / 2, 3, 6, 7, 10, 11 - hexaphenylbenzene An external quantum efficiency vs. luminosity diagram of phenanthrene [5 nm] / Alq [45 nm] / LiF [0.5 nm] / Al [100 nm].

圖33顯示裝置:CuPc[10毫微米]/NPD[30毫微米]/CBP:es-5,10%[30毫微米]/2,3,6,7,10,11-六苯基苯并菲[5毫微米]/Alq[45毫微米]/LiF[0.5毫微米]/Al[100毫微米]之電致發光光譜。Figure 33 shows the device: CuPc [10 nm] / NPD [30 nm] / CBP: es-5, 10% [30 nm] / 2, 3, 6, 7, 10, 11-hexaphenylbenzo Electroluminescence spectrum of phenanthrene [5 nm] / Alq [45 nm] / LiF [0.5 nm] / Al [100 nm].

圖34顯示關於裝置:CuPc[10毫微米]/NPD[30毫微米]/CBP:es-5,10%[30毫微米]/2,3,6,7,10,11-六苯基苯并菲[5毫微米]/Alq[45毫微米]/LiF[0.5毫微米]/Al[100毫微米]之正規化發光度對時間之圖。Figure 34 shows the device: CuPc [10 nm] / NPD [30 nm] / CBP: es-5, 10% [30 nm] / 2, 3, 6, 7, 10, 11-hexaphenylbenzene A graph of normalized luminosity versus time for phenanthrene [5 nm] / Alq [45 nm] / LiF [0.5 nm] / Al [100 nm].

圖35顯示關於裝置:HIL4[10毫微米]/NPD[30毫微米]/CBP:es-5,6%[30毫微米]/CBP[5毫微米]/Alq[45毫微米]/LiF[0.5毫微米]/Al[100毫微米]之電流密度對電壓之圖。Figure 35 shows the device: HIL4 [10 nm] / NPD [30 nm] / CBP: es-5, 6% [30 nm] / CBP [5 nm] / Alq [45 nm] / LiF [ A plot of current density vs. voltage for 0.5 nm]/Al [100 nm].

圖36顯示關於裝置:HIL4[10毫微米]/NPD[30毫微米]/CBP:es-5,6%[30毫微米]/CBP[5毫微米]/Alq[45毫微米]/LiF[0.5毫微米]/Al[100毫微米]之外部量子效率對發光度之圖。Figure 36 shows the device: HIL4 [10 nm] / NPD [30 nm] / CBP: es-5, 6% [30 nm] / CBP [5 nm] / Alq [45 nm] / LiF [ A plot of external quantum efficiency versus luminosity for 0.5 nm]/Al [100 nm].

圖37顯示關於裝置:HIL4[10毫微米]/NPD[30毫微米]/CBP:es-5,6%[30毫微米]/CBP[5毫微米]/Alq[45毫微米]/LiF[0.5毫微米]/Al[100毫微米]之正規化發光度對時間之圖。Figure 37 shows the device: HIL4 [10 nm] / NPD [30 nm] / CBP: es-5, 6% [30 nm] / CBP [5 nm] / Alq [45 nm] / LiF [ A graph of normalized luminosity versus time for 0.5 nm]/Al [100 nm].

圖38顯示裝置:HIL4[10毫微米]/NPD[30毫微米]/CBP:es-5,6%[30毫微米]/CBP[5毫微米]/Alq[45毫微米]/LiF[0.5毫微米]/Al[100毫微米]之電致發光光譜。Figure 38 shows the device: HIL4 [10 nm] / NPD [30 nm] / CBP: es-5, 6% [30 nm] / CBP [5 nm] / Alq [45 nm] / LiF [0.5 Electroluminescence spectrum of nanometers / Al [100 nm].

圖39顯示關於裝置:HIL4[10毫微米]/NPD[30毫微米]/CBP:es-5,15%[30毫微米]/2,3,6,7,10,11-六苯基苯并菲[5毫微米]/Alq[45毫微米]/LiF[0.5毫微米]/Al[100毫微米]之電流密度對電壓之圖。Figure 39 shows the device: HIL4 [10 nm] / NPD [30 nm] / CBP: es-5, 15% [30 nm] / 2, 3, 6, 7, 10, 11-hexaphenylbenzene A plot of current density versus voltage for phenanthrene [5 nm] / Alq [45 nm] / LiF [0.5 nm] / Al [100 nm].

圖40顯示關於裝置:HIL4[10毫微米]/NPD[30毫微米]/CBP:es-5,15%[30毫微米]/2,3,6,7,10,11-六苯基苯并菲[5毫微米]/Alq[45毫微米]/LiF[0.5毫微米]/Al[100毫微米]之外部量子效率對發光度之圖。Figure 40 shows the device: HIL4 [10 nm] / NPD [30 nm] / CBP: es-5, 15% [30 nm] / 2, 3, 6, 7, 10, 11-hexaphenylbenzene An external quantum efficiency vs. luminosity diagram of phenanthrene [5 nm] / Alq [45 nm] / LiF [0.5 nm] / Al [100 nm].

圖41顯示關於裝置:HIL4[10毫微米]/NPD[30毫微米]/CBP:es-5,15%[30毫微米]/2,3,6,7,10,11-六苯基苯并菲[5毫微米]/Alq[45毫微米]/LiF[0.5毫微米]/Al[100毫微米]之正規化發光度對時間之圖。Figure 41 shows the device: HIL4 [10 nm] / NPD [30 nm] / CBP: es-5, 15% [30 nm] / 2, 3, 6, 7, 10, 11-hexaphenylbenzene A graph of normalized luminosity versus time for phenanthrene [5 nm] / Alq [45 nm] / LiF [0.5 nm] / Al [100 nm].

圖42顯示裝置:HIL4[10毫微米]/NPD[30毫微米]/CBP:es-5,15%[30毫微米]/2,3,6,7,10,11-六苯基苯并菲[5毫微米]/Alq[45毫微米]/LiF[0.5毫微米]/Al[100毫微米]之電致發光光譜。Figure 42 shows the device: HIL4 [10 nm] / NPD [30 nm] / CBP: es-5, 15% [30 nm] / 2, 3, 6, 7, 10, 11-hexaphenylbenzo Electroluminescence spectrum of phenanthrene [5 nm] / Alq [45 nm] / LiF [0.5 nm] / Al [100 nm].

圖43顯示關於裝置:HIL4[10毫微米]/NPD[30毫微米]/CBP:es-5,6%[30毫微米]/Alq[45毫微米]/LiF[0.5毫微米]/Al[100毫微米]之電流密度對電壓之圖。Figure 43 shows the device: HIL4 [10 nm] / NPD [30 nm] / CBP: es-5, 6% [30 nm] / Alq [45 nm] / LiF [0.5 nm] / Al [ A plot of current density versus voltage for 100 nm].

圖L4顯示關於裝置:HIL4[10毫微米]/NPD[30毫微米]/CBP:es-5,6%[30毫微米]/Alq[45毫微米]/LiF[0.5毫微米]/Al[100毫微米]之外部量子效率對發光度之圖。Figure L4 shows the device: HIL4 [10 nm] / NPD [30 nm] / CBP: es-5, 6% [30 nm] / Alq [45 nm] / LiF [0.5 nm] / Al [ A plot of external quantum efficiency versus luminosity at 100 nm].

圖45顯示關於裝置:HIL4[10毫微米]/NPD[30毫微米]/CBP:es-5,6%[30毫微米]/Alq[45毫微米]/LiF[0.5毫微米]/Al[100毫微米]之正規化發光度對時間之圖。Figure 45 shows the device: HIL4 [10 nm] / NPD [30 nm] / CBP: es-5, 6% [30 nm] / Alq [45 nm] / LiF [0.5 nm] / Al [ 100 nm] normalized luminosity versus time graph.

圖46顯示裝置:HIL4[10毫微米]/NPD[30毫微米]/CBP:es-5,6%[30毫微米]/Alq[45毫微米]/LiF[0.5毫微米]/Al[100毫微米]之電致發光光譜。Figure 46 shows the device: HIL4 [10 nm] / NPD [30 nm] / CBP: es-5, 6% [30 nm] / Alq [45 nm] / LiF [0.5 nm] / Al [100 Electron luminescence spectrum of nanometer].

圖47顯示關於裝置:HIL4[10毫微米]/NPD[30毫微米]/CBP:es-5,15%[30毫微米]/Alq[45毫微米]/LiF[0.5毫微米]/Al[100毫微米]之電流密度對電壓之圖。Figure 47 shows the device: HIL4 [10 nm] / NPD [30 nm] / CBP: es-5, 15% [30 nm] / Alq [45 nm] / LiF [0.5 nm] / Al [ A plot of current density versus voltage for 100 nm].

圖48顯示關於裝置:HIL4[10毫微米]/NPD[30毫微米]/CBP:es-5,15%[30毫微米]/Alq[45毫微米]/LiF[0.5毫微米]/Al[100毫微米]之外部量子效率對發光度之圖。Figure 48 shows the device: HIL4 [10 nm] / NPD [30 nm] / CBP: es-5, 15% [30 nm] / Alq [45 nm] / LiF [0.5 nm] / Al [ A plot of external quantum efficiency versus luminosity at 100 nm].

圖49顯示關於裝置:HIL4[10毫微米]/NPD[30毫微米]/CBP:es-5,15%[30毫微米]/Alq[45毫微米]/LiF[0.5毫微米]/Al[100毫微米]之正規化發光度對時間之圖。Figure 49 shows the device: HIL4 [10 nm] / NPD [30 nm] / CBP: es-5, 15% [30 nm] / Alq [45 nm] / LiF [0.5 nm] / Al [ 100 nm] normalized luminosity versus time graph.

圖50顯示裝置:HIL4[10毫微米]/NPD[30毫微米]/CBP:es-5,15%[30毫微米]/Alq[45毫微米]/LiF[0.5毫微米]/Al[100毫微米]之電致發光光譜。Figure 50 shows the device: HIL4 [10 nm] / NPD [30 nm] / CBP: es-5, 15% [30 nm] / Alq [45 nm] / LiF [0.5 nm] / Al [100 Electron luminescence spectrum of nanometer].

圖51顯示關於裝置A、B、C、D、F及F之外部量子效率對電流密度之圖。Figure 51 shows a plot of external quantum efficiency versus current density for devices A, B, C, D, F, and F.

圖52顯示關於裝置A、B、C、D、E及F之電流密度對電壓之圖。Figure 52 shows a plot of current density versus voltage for devices A, B, C, D, E, and F.

圖53顯示裝置A、B、C、D、E及F之電致發光光譜。Figure 53 shows the electroluminescence spectra of devices A, B, C, D, E and F.

圖54顯示關於裝置A、B、C、D、E及F之正規化發光度對時間之圖。Figure 54 shows a plot of normalized luminosity versus time for devices A, B, C, D, E, and F.

圖55顯示關於裝置AA、AB、AC、AD、AE及AF之電流密度對電壓之圖。Figure 55 shows a plot of current density vs. voltage for devices AA, AB, AC, AD, AE, and AF.

圖56顯示關於裝置AA、AB、AC、AD、AE及AF之外部量子效率對電流密度之圖。Figure 56 shows a plot of external quantum efficiency versus current density for devices AA, AB, AC, AD, AE, and AF.

圖57顯示裝置AA、AB、AC、AD、AE及AF之電致發光光譜。Figure 57 shows the electroluminescence spectra of the devices AA, AB, AC, AD, AE and AF.

圖58顯示關於裝置AA與AB之正規化發光度對時間之圖。Figure 58 shows a plot of normalized luminosity versus time for devices AA and AB.

圖59顯示關於裝置AG、AH、AI、AJ及AK之電流密度對電壓之圖。Figure 59 shows a plot of current density versus voltage for devices AG, AH, AI, AJ, and AK.

圖60顯示關於裝置AG、AH、AI、AJ及AK之外部量子效率對電流密度之圖。Figure 60 shows a graph of external quantum efficiency versus current density for devices AG, AH, AI, AJ, and AK.

圖61顯示裝置AG、AH、AI、AJ及AK之電致發光光譜。Figure 61 shows the electroluminescence spectra of the devices AG, AH, AI, AJ and AK.

圖62顯示關於裝置BA、BB、BC及BD之外部量子效率對電流密度之圖。Figure 62 shows a plot of external quantum efficiency versus current density for devices BA, BB, BC, and BD.

圖63顯示關於裝置BA、BB、BC及BD之電流密度對電壓之圖。Figure 63 shows a plot of current density vs. voltage for devices BA, BB, BC and BD.

圖64顯示關於裝置BE、BF、BG及BH之外部量子效率對電流密度之圖。Figure 64 shows a plot of external quantum efficiency versus current density for devices BE, BF, BG, and BH.

圖65顯示關於裝置BE、BF、BG及BH之電流密度對電壓之圖。Figure 65 shows a plot of current density vs. voltage for devices BE, BF, BG, and BH.

圖66顯示裝置BA、BB、BC、BD、BE、BF、BG及BH之電致發光光譜。Figure 66 shows the electroluminescence spectra of the devices BA, BB, BC, BD, BE, BF, BG and BH.

圖67顯示關於裝置BC、BF、BE及BG之正規化發光度對時間之圖。Figure 67 shows a plot of normalized luminosity versus time for devices BC, BF, BE, and BG.

圖68顯示化合物es-1、es-2、es-3及es-4之結構。Figure 68 shows the structures of the compounds es-1, es-2, es-3 and es-4.

圖69顯示化合物es-5、es-6、es-7及es-8之結構。Figure 69 shows the structures of the compounds es-5, es-6, es-7 and es-8.

圖70顯示關於實例9之裝置結構。Figure 70 shows the structure of the device relating to Example 9.

圖71顯示關於實例9裝置之外部量子效率對發光度之圖。Figure 71 shows a graph of external quantum efficiency vs. luminosity for the device of Example 9.

圖72顯示關於實例9裝置之功率效率(Lm/W)對發光度之圖。Figure 72 shows a graph of power efficiency (Lm/W) versus luminosity for the device of Example 9.

圖73顯示關於實例9裝置之發光度對電壓之圖。Figure 73 shows a plot of luminosity versus voltage for the device of Example 9.

圖74顯示關於實例9裝置之EL強度對波長之圖。Figure 74 shows a plot of EL intensity versus wavelength for the device of Example 9.

圖75顯示關於實例9裝置,在1000尼特下之裝置壽命之圖(正規化發光度對時間)。Figure 75 shows a graph of device lifetime (normalized luminosity vs. time) at 1000 nits for the Example 9 device.

100...裝置100. . . Device

115...陽極115. . . anode

110...基板110. . . Substrate

120...空穴注入層120. . . Hole injection layer

125...空穴輸送層125. . . Hole transport layer

130...電子阻斷層130. . . Electronic blocking layer

135...發射層135. . . Emissive layer

140...空穴阻斷層140. . . Hole blocking layer

145...電子輸送層145. . . Electron transport layer

150...電子注入層150. . . Electron injection layer

155...保護層155. . . The protective layer

160...陰極160. . . cathode

162...第一個導電層162. . . First conductive layer

164...第二個導電層164. . . Second conductive layer

Claims (6)

一種有機發光裝置,其包含:陽極;陰極;及經配置於該陽極與陰極間之磷光發射區域,其中發射區域包含具有式IV之發射材料: 其中:M為第二或第三列過渡金屬;虛線表示視情況存在之雙鍵;L為輔助配位基;X2係選自C-R2 或N;R2 係選自H、烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基;R5 係選自H、烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基;R7 係選自H、烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、 SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基;R12 係選自烷基、芳基、芳烷基、環烷基及C(O)R';R13 與R14 係獨立選自H、烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基;另外或替代地,R13 與R14 係形成稠合5-或6-員環狀基團,其中稠合環狀基團係視情況被一或多個取代基取代,取代基選自烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基;R22 係選自烷基、芳基、芳烷基、環烷基及C(O)R';R23 與R24 係獨立選自H、烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基;另外或替代地,R23 與R24 係形成稠合5-或6-員環狀基團,其中稠合環狀基團係視情況被一或多個取代基取代,取代基選自烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基;各R'係獨立選自H、烷基、烯基、炔基、芳烷基、芳基及雜芳基;各R"係獨立選自H、烷基、烯基、炔基及芳烷基;n 為1或2;且m 為0至3,其中當n 為1時,m為1至3,而當n 為2時,m 為0。An organic light-emitting device comprising: an anode; a cathode; and a phosphorescent emitting region disposed between the anode and the cathode, wherein the emitting region comprises an emitting material having the formula IV: Wherein: M is a second or third column transition metal; a broken line indicates a double bond as the case exists; L is an auxiliary ligand; X2 is selected from CR 2 or N; and R 2 is selected from H, an alkyl group, an alkenyl group , alkynyl, aralkyl, O-R', N(R') 2 , SR', C(O)R', C(O)OR', C(O)NR' 2 , CN, CF 3 , NO 2 , SO 2 R′, SOR′, SO 3 R′, Si(R”) 3 , halo, aryl and heteroaryl; R 5 is selected from H, alkyl, alkenyl, alkynyl, aryl Alkyl, O-R', N(R') 2 , SR', C(O)R', C(O)OR', C(O)NR' 2 , CN, CF 3 , NO 2 , SO 2 R', SOR', SO 3 R', Si(R") 3 , halo, aryl and heteroaryl; R 7 is selected from H, alkyl, alkenyl, alkynyl, aralkyl, O- R', N(R') 2 , SR', C(O)R', C(O)OR', C(O)NR' 2 , CN, CF 3 , NO 2 , SO 2 R', SOR' , SO 3 R', Si(R") 3 , halo, aryl and heteroaryl; R 12 is selected from the group consisting of alkyl, aryl, aralkyl, cycloalkyl and C(O)R'; 13 and R 14 are independently selected from H, alkyl, alkenyl, alkynyl, aralkyl, O-R', N(R') 2 , SR', C(O)R', C(O)OR ', C(O)NR' 2 , CN, CF 3 , NO 2 , SO 2 R', SOR', SO 3 R', Si(R") 3 , halo, aryl and a heteroaryl group; additionally or alternatively, R 13 and R 14 form a fused 5- or 6-membered cyclic group, wherein the fused cyclic group is optionally substituted with one or more substituents, substituents Selected from alkyl, alkenyl, alkynyl, aralkyl, O-R', N(R') 2 , SR', C(O)R', C(O)OR', C(O)NR' 2 , CN, CF 3 , NO 2 , SO 2 R', SOR', SO 3 R', Si (R") 3 , halo, aryl and heteroaryl; R 22 is selected from alkyl, aryl , aralkyl, cycloalkyl and C(O)R'; R 23 and R 24 are independently selected from H, alkyl, alkenyl, alkynyl, aralkyl, O-R', N(R') 2 , SR', C(O)R', C(O)OR', C(O)NR' 2 , CN, CF 3 , NO 2 , SO 2 R', SOR', SO 3 R', Si ( R ") 3, halo, aryl and heteroaryl; Additionally or alternatively, R 23 and R 24 form a fused-based 5- or 6-membered cyclic group, wherein the cyclic group fused system optionally Substituted by one or more substituents selected from alkyl, alkenyl, alkynyl, aralkyl, O-R', N(R') 2 , SR', C(O)R', C ( O) OR', C(O)NR' 2 , CN, CF 3 , NO 2 , SO 2 R', SOR', SO 3 R', Si(R") 3 , halo, aryl and heteroaryl Each R' is independently selected from H, alkane a base, an alkenyl group, an alkynyl group, an arylalkyl group, an aryl group and a heteroaryl group; each R" is independently selected from the group consisting of H, alkyl, alkenyl, alkynyl and aralkyl; n is 1 or 2; and m is 0-3, wherein when n is 1, m is 1-3, and when n is 2, m is 0. 如請求項1之裝置,其中M為Os。 The device of claim 1, wherein M is Os. 如請求項1之裝置,其中該發射材料係下式: The device of claim 1, wherein the emission material is of the following formula: 一種化合物,其具有式IV: 其中:M為第二或第三列過渡金屬;虛線表示視情況存在之雙鍵;L為輔助配位基;X2 係選自C-R2 或N;R2 係選自H、烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基;R5 係選自H、烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、 SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基;R7 係選自H、烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基;R12 係選自烷基、芳基、芳烷基、環烷基及C(O)R';R13 與R14 係獨立選自H、烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基;另外或替代地,R13 與R14 係形成稠合5-或6-員環狀基團,其中稠合環狀基團係視情況被一或多個取代基取代,取代基選自烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基;R22 係選自烷基、芳基、芳烷基、環烷基及C(O)R';R23 與R24 係獨立選自H、烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基;另外或替代地,R23 與R24 係形成稠合5-或6-員環狀基團,其中稠合環狀基團係視情況被一或多個取代基取代,取代基選自烷基、烯基、炔基、芳烷基、O-R'、N(R')2 、SR'、C(O)R'、C(O)OR'、C(O)NR'2 、CN、CF3 、NO2 、SO2 R'、SOR'、SO3 R'、Si(R")3 、鹵基、芳基及雜芳基;各R'係獨立選自H、烷基、烯基、炔基、芳烷基、芳基及 雜芳基;各R"係獨立選自H、烷基、烯基、炔基及芳烷基;n 為1或2;且m 為0至3,其中當n 為1時,m為1至3,而當n 為2時,m 為0。a compound having the formula IV: Wherein: M is a second or third column transition metal; a broken line indicates a double bond as the case exists; L is an auxiliary ligand; X 2 is selected from CR 2 or N; and R 2 is selected from H, an alkyl group, an alkene Base, alkynyl, aralkyl, O-R', N(R') 2 , SR', C(O)R', C(O)OR', C(O)NR' 2 , CN, CF 3 , NO 2 , SO 2 R′, SOR′, SO 3 R′, Si(R”) 3 , halo, aryl and heteroaryl; R 5 is selected from H, alkyl, alkenyl, alkynyl, Aralkyl, O-R', N(R') 2 , SR', C(O)R', C(O)OR', C(O)NR' 2 , CN, CF 3 , NO 2 , SO 2 R', SOR', SO 3 R', Si(R") 3 , halo, aryl and heteroaryl; R 7 is selected from H, alkyl, alkenyl, alkynyl, aralkyl, O -R', N(R') 2 , SR', C(O)R', C(O)OR', C(O)NR' 2 , CN, CF 3 , NO 2 , SO 2 R', SOR ', SO 3 R', Si(R") 3 , halo, aryl and heteroaryl; R 12 is selected from the group consisting of alkyl, aryl, aralkyl, cycloalkyl and C(O)R'; R 13 and R 14 are independently selected from H, alkyl, alkenyl, alkynyl, aralkyl, O-R', N(R') 2 , SR', C(O)R', C(O) OR ', C (O) NR ' 2, CN, CF 3, NO 2, SO 2 R ', SOR', SO 3 R ', Si (R ") 3, halo, aryl Heteroaryl; Additionally or alternatively, R 13 and R 14 form a fused-based 5- or 6-membered cyclic group, wherein the cyclic group fused system optionally substituted with one or more substituents, the substituents Selected from alkyl, alkenyl, alkynyl, aralkyl, O-R', N(R') 2 , SR', C(O)R', C(O)OR', C(O)NR' 2 , CN, CF 3 , NO 2 , SO 2 R', SOR', SO 3 R', Si (R") 3 , halo, aryl and heteroaryl; R 22 is selected from alkyl, aryl , aralkyl, cycloalkyl and C(O)R'; R 23 and R 24 are independently selected from H, alkyl, alkenyl, alkynyl, aralkyl, O-R', N(R') 2 , SR', C(O)R', C(O)OR', C(O)NR' 2 , CN, CF 3 , NO 2 , SO 2 R', SOR', SO 3 R', Si ( R ") 3, halo, aryl and heteroaryl; Additionally or alternatively, R 23 and R 24 form a fused-based 5- or 6-membered cyclic group, wherein the cyclic group fused system optionally Substituted by one or more substituents selected from alkyl, alkenyl, alkynyl, aralkyl, O-R', N(R') 2 , SR', C(O)R', C ( O) OR', C(O)NR' 2 , CN, CF 3 , NO 2 , SO 2 R', SOR', SO 3 R', Si(R") 3 , halo, aryl and heteroaryl Each R' is independently selected from H, Group, an alkenyl group, an alkynyl group, an aralkyl group, an aryl group, and heteroaryl; each R "is independently selected lines H, an alkyl group, alkenyl group, alkynyl group and aralkyl group; n is 1 or 2; and m is 0-3, wherein when n is 1, m is 1-3, and when n is 2, m is 0. 如請求項4之化合物,其中M為Os。 The compound of claim 4, wherein M is Os. 如請求項4之化合物,其具有下式: The compound of claim 4, which has the formula:
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