TWI476291B - Preparation method of spinel nickel cobalt oxide target - Google Patents

Preparation method of spinel nickel cobalt oxide target Download PDF

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TWI476291B
TWI476291B TW101147778A TW101147778A TWI476291B TW I476291 B TWI476291 B TW I476291B TW 101147778 A TW101147778 A TW 101147778A TW 101147778 A TW101147778 A TW 101147778A TW I476291 B TWI476291 B TW I476291B
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target
cobalt oxide
spinel nickel
powder
oxide target
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TW201425614A (en
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Nat Inst Chung Shan Science & Technology
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尖晶石鎳鈷氧化物靶材之製造方法Method for producing spinel nickel cobalt oxide target

    本發明係為一種靶材之製造方法,其尤指一種尖晶石鎳鈷氧化物靶材之製造方法。
The present invention relates to a method for producing a target, and more particularly to a method for producing a spinel nickel-cobalt oxide target.

    透明導電膜(Transparent conductive oxide, TCO)其狹義的定義為在可見光範圍內擁有80%以上的光穿透率,以及高導電性質,其電阻值要小於10-3 Ω-cm 之薄膜,我們皆可稱之為透明導電膜。而透明導電膜的材料主要分為兩類:一類為金屬薄膜,另一類為金屬氧化物半導體薄膜。金屬薄膜早期作為透明電極使用,雖然具有極佳的導電性,但是金屬薄膜對光的吸收率太高,造成穿透率降低,如果要增加其可見光範圍的穿透率,相對薄膜厚度不能太厚(<100A),然而大部分的金屬薄膜在厚度小於100A 時,會形成島狀不連續膜,使得薄膜電阻值增加,金屬薄膜的穩定性差等因素,因此金屬薄膜慢慢被淘汰。金屬氧化物半導體薄膜以其良好的可見光穿透率以及接近金屬薄膜的導電率等特性,已逐漸取代金屬薄膜,因此近年來大量研究人力投入研究TCO。
    由於N-type 透明導電薄膜的傳導載子是以電子為主,而電子本身的遷移率較高,所以N-type透明導電薄膜的導電性佳,且N-type TCO 透光率高,相較於P-type TCO 是近幾年才研究出來的,透明導電氧化物材料的能隙值約在3eV 以上,可見光範圍的能量(≒1.6~3.3eV),故不足以將TCO 的價帶(valence band)電子激發至導帶(conduction band),只有波長在400~800nm 之間的光可以穿透,並不會產生光吸收,因此TCO 在可見光範圍是透明的。當入射光能量大於能隙時,會將價帶的電子激發到導帶,所以透光範圍在短波長(能隙波長,λg)的界限是由能隙大小所決定。
    TCO 中的載子皆處於一種電漿狀態,與光的交互作用很強。當入射光的波長大於電漿頻率(plasma frequency)所決定的波長(電漿波長,λp)時,入射光會被反射,對TCO 而言電漿波長位於紅外線區,因此透光範圍在長波長的界限則由電漿頻率所決定。薄膜透明度的下降大部分為吸收與反射所造成,吸收與反射的原因有許多,除了上述所提到的能階吸收以及自由載子吸收與反射等,還有雜質、缺陷的存在以及晶格震盪吸收、薄膜結晶程度、表面粗糙度所造成的漫射,都會影響到透明度的表現。
     已知有數種P-type TCO 的材料,如NiCo2 O4 、Cu2 O、NiO、CuGaO2 等等。NiCo2 O4 相較於其他的P 型透明導電氧化物在紅外光區有較佳的紅外光穿透率。P 型的TCO 氧化物透明電極之效能若能有效提升,則可以與N 型TCO形成P-N junction,可應用於諸多領域,例如:透明電子元件,OLED 電洞注入層之取代P型導電膜有高功函數,可降低電洞注入的能障、太陽能電池製作之應用。如NiO透明導電膜的應用在發光二極體作為電洞傳輸和電致色變元件以及太陽能光電元件。NiCo2 O4 已知擁有紅外光的高穿透度,又因紅外光區佔太陽光能將近一半,對於太陽能電池在紅外光吸收的方面可以有效的提升好的改善,若是應用在全波段太陽能電池上可以進一步吸收紅外光的波段以提高轉換效率,有效地增加對太陽光能的利用率。
    由於尖晶石鎳鈷氧化物在高溫塊材燒結(sintering)過程中具有表面擴散(surface diffusion)與蒸發凝結(evaporation condensation)特性,使其緻密化困難,導致燒結體形成多孔、疏鬆且低強度的結構,在製作濺鍍靶材時相當困難,因此在提升尖晶石鎳鈷氧化物靶材燒結緻密性方面,已有許多方法提出,如利用熱均壓燒結(hot isostatic pressing)或使用極細的奈米粉末配合高壓力壓胚,均可達到提升緻密度的效果。然而實際應用方面,添加助燒結劑促進高溫擴散仍是最方便有效的方法,本發明添加鹼金屬離子可有效增加氧離子的空缺進而幫助氧化物中的氧擴散,增加燒結的驅動力有效提升密度。其中尤以鹼金屬離子添加的效果最引人注目,可在少量的添加(2 wt%)形成對尖晶石鎳鈷氧化物靶材可得相對密度(relative density)90%以上之緻密化的效果。
The transparent conductive oxide (TCO) is defined as a film having a light transmittance of 80% or more in the visible light range and a high electrical conductivity, and a film having a resistance value of less than 10 -3 Ω-cm. It can be called a transparent conductive film. The materials of the transparent conductive film are mainly classified into two types: one is a metal film, and the other is a metal oxide semiconductor film. The metal film was used as a transparent electrode in the early stage. Although it has excellent conductivity, the absorption rate of light by the metal film is too high, resulting in a decrease in transmittance. If the transmittance in the visible range is to be increased, the film thickness cannot be too thick. (<100A), however, when the thickness of the metal film is less than 100A, an island-like discontinuous film is formed, which causes an increase in the resistance value of the film and a poor stability of the metal film, and the metal film is gradually eliminated. Metal oxide semiconductor thin films have gradually replaced metal thin films because of their good visible light transmittance and the electrical conductivity close to metal thin films. Therefore, in recent years, a large number of research personnel have been investigating TCO.
Since the conduction carrier of the N-type transparent conductive film is mainly electrons and the mobility of the electron itself is high, the conductivity of the N-type transparent conductive film is good, and the light transmittance of the N-type transparent TCO is high. The P-type TCO was developed in recent years. The transparent conductive oxide material has a band gap of about 3 eV or more, and the energy in the visible range (≒1.6~3.3 eV), so it is not enough to valence the TCO. Band) Electron excitation to the conduction band. Only light with a wavelength between 400 and 800 nm can penetrate without generating light absorption, so the TCO is transparent in the visible range. When the incident light energy is greater than the energy gap, the electrons of the valence band are excited to the conduction band, so the boundary of the light transmission range at the short wavelength (the energy gap wavelength, λg) is determined by the size of the energy gap.
The carriers in the TCO are in a plasma state and interact with light very strongly. When the wavelength of the incident light is greater than the wavelength determined by the plasma frequency (plasma wavelength, λp), the incident light is reflected. For the TCO, the plasma wavelength is in the infrared region, so the light transmission range is at the long wavelength. The limits are determined by the frequency of the plasma. The decrease in film transparency is mostly caused by absorption and reflection. There are many reasons for absorption and reflection, in addition to the above-mentioned energy level absorption and free carrier absorption and reflection, as well as impurities, defects and lattice oscillations. The absorption, the degree of crystallization of the film, and the diffusion caused by the surface roughness all affect the performance of transparency.
Materials of several P-type TCOs such as NiCo 2 O 4 , Cu 2 O, NiO, CuGaO 2 and the like are known. NiCo 2 O 4 has better infrared light transmittance in the infrared region than other P-type transparent conductive oxides. If the performance of the P-type TCO oxide transparent electrode can be effectively improved, it can form a PN junction with the N-type TCO, which can be applied to many fields, for example, transparent electronic components, and the P-type conductive film of the OLED hole injection layer is high. The work function can reduce the energy barrier of hole injection and the application of solar cell fabrication. For example, a NiO transparent conductive film is used in a light-emitting diode as a hole transmission and electrochromic element and a solar photovoltaic element. NiCo 2 O 4 is known to have high penetration of infrared light, and because the infrared light area accounts for nearly half of the solar energy, it can effectively improve the infrared light absorption of solar cells, if it is applied to full-band solar energy. The battery can further absorb the infrared light band to improve the conversion efficiency and effectively increase the utilization of solar energy.
Due to the surface diffusion and evaporation condensation characteristics of spinel nickel-cobalt oxide during high-temperature bulk sintering, it is difficult to densify, resulting in porous, loose and low strength of the sintered body. The structure is quite difficult to make a sputter target, so there are many methods for improving the compactness of the spinel nickel-cobalt oxide target, such as hot isostatic pressing or very fine The nano-powder combined with high-pressure imprinting can achieve the effect of increasing density. However, in practical applications, the addition of a sintering aid to promote high temperature diffusion is still the most convenient and effective method. The addition of alkali metal ions in the invention can effectively increase the vacancy of oxygen ions and thereby help the oxygen diffusion in the oxide, and increase the driving force of sintering to effectively increase the density. . Among them, the effect of adding alkali metal ions is the most attractive, and a small amount of addition (2 wt%) can form a densification of a relative density of 90% or more for a spinel nickel-cobalt oxide target. effect.

    本發明之主要目的,係提供一種尖晶石鎳鈷氧化物靶材之製造方法,透過加入一鹼金屬離子,使尖晶石鎳鈷氧化物靶材之密度提高。
    為了達到上述之目的,本發明揭示了一種尖晶石鎳鈷氧化物靶材之製造方法,將一尖晶石鎳鈷氧化物,添加含鹼金屬離子之粉末(如:氫氧化鋰或氫氧化鈉),於進行鍛燒後,經重複研磨與過篩,接著利用乾壓成型法,將混合粉末壓製成圓形模製體,並將模製體放置於高溫爐加熱,進行高溫燒結(約1500°C),可得具有高緻密化之NiCo2 O4 靶材,其相對密度達90%以上。
SUMMARY OF THE INVENTION A primary object of the present invention is to provide a method of producing a spinel nickel-cobalt oxide target by increasing the density of a spinel nickel-cobalt oxide target by the addition of an alkali metal ion.
In order to achieve the above object, the present invention discloses a method for producing a spinel nickel-cobalt oxide target by adding a spinel nickel-cobalt oxide to a powder containing an alkali metal ion (eg, lithium hydroxide or hydroxide). Sodium), after calcination, repeated grinding and sieving, followed by dry pressing molding, pressing the mixed powder into a circular molded body, and placing the molded body in a high temperature furnace for high-temperature sintering (about At 1500 ° C), a highly densified NiCo 2 O 4 target having a relative density of 90% or more is obtained.

    為使 貴審查委員對本發明之特徵及所達成之功效有更進一步之瞭解與認識,謹佐以較佳之實施例及配合詳細之說明,說明如後:
    本發明為改善習知尖晶石鎳鈷氧化物材料不易燒結緻密之缺點,藉由添加含鹼金屬離子之粉末可達高緻密化之尖晶石鎳鈷氧化物靶材。
    首先,請參閱第一圖,其係為本發明之一較佳實施例之製造流程圖;如圖所示,本發明係揭示一種尖晶石鎳鈷氧化物靶材之製造方法,該製造方法係包含下列步驟:
步驟S10,混合一尖晶石鎳鈷氧化物粉末與一含鹼金屬離子之粉末成一混合粉末;
步驟S20,將該混合粉末與一溶劑混合形成一混合粉末漿體,將該混合粉末漿體進行研磨;
步驟S30,將該混合粉末漿體烘乾,加熱及重複過篩形成一靶材粉末;及
步驟S40,將該靶材粉末壓製成一模製體,進行燒結以形成一尖晶石鎳鈷氧化物靶材。
    於步驟S10中,該含鹼金屬離子之粉末係選自於氫氧化鈉或氫氧化鋰。
    於步驟S20中,該溶劑其係選自於去離子水及酒精所組成群組之其中之一。
    於步驟S30中,其加熱溫度為700°C。
    於步驟S40中,其燒結溫度為1000°C。
    本發明係透過添加氫氧化鋰或氫氧化鈉之尖晶石鎳鈷氧化物陶瓷靶材使其相對密度達90%以上,以改善尖晶石鎳鈷氧化物材料不易燒結緻密之缺點,且,藉由氫氧化鋰或氫氧化鈉之適當比例添加可達高緻密化之尖晶石鎳鈷氧化物靶材。
    請參閱第二圖,其係為本發明之一較佳實施例之鹼金屬離子添加比例與靶材密度及靶材相對密度關係圖;如圖所示,本發明所揭露之鹼金屬離子之粉末,本實施例以鈉離子做一說明,當氫氧化鈉之添加量為2wt %時,添加氫氧化鈉之尖晶石鎳鈷氧化物靶材之相對密度從78%提升為94%,相對於未添加氫氧化鈉作之靶材之相對密度(78%),靶材之相對密度大幅提昇,靶材之強度亦增加,亦即氫氧化鈉對尖晶石鎳鈷氧化物靶材之添加有助於尖晶石鎳鈷氧化物靶材之燒結,相對也提高了靶材緻密化,靶材之相對密度亦大幅增加,即靶材之壽命增長,工業上可減少靶材更換之時間,降低成本。故,鹼金屬離子之粉末之添加,不但提升了尖晶石鎳鈷氧化物靶材之緻密性,並改善靶材之壽命及強度。
    再者,請參閱第三圖,其係為本發明之一較佳實施例之高緻密化尖晶石鎳鈷氧化物靶材之表面型態顯微示意照片圖;如圖所示,本發明之含鹼金屬離子之高緻密化尖晶石鎳鈷氧化物靶材在高溫熱處理 (約1500°C) 燒結後,該尖晶石鎳鈷氧化物圓形模製體,形成尖晶石鎳鈷氧化物緻密陶瓷圓形靶材,在高溫熱處理下,透過所添加鹼金屬離子燒結的促進,並沒有造成尖晶石鎳鈷氧化物靶材的變形、裂孔或孔隙,仍形成圓形靶材形狀,此對靶材的應用為有利影響。而靶材表面型態顯微結構圖顯示,靶材表面顯微結構相當緻密,僅有些微閉孔隙,但不影響靶材整體的緻密性,因此靶材相對密度達94%,可作為實際應用之商業靶材。
    綜上所述,本發明之尖晶石鎳鈷氧化物靶材之製造方法,以『尖晶石鎳鈷氧化物添加含鹼金屬離子燒結促進劑』作為主要策略,可有效改善尖晶石鎳鈷氧化物靶材材料本身之不易燒結緻密之缺點,使其具有緻密化、靶材強度提高及降低靶材損耗成本等優點,惟以上所述者,僅為本發明之較佳實施例而已,並非用來限定本發明實施之範圍,舉凡依本發明申請專利範圍所述之形狀、構造、特徵及精神所為之均等變化與修飾,均應包括於本發明之申請專利範圍內。
    本發明係實為一具有新穎性、進步性及可供產業利用者,應符合我國專利法所規定之專利申請要件無疑,爰依法提出發明專利申請,祈 鈞局早日賜准專利,至感為禱。
In order to provide a better understanding and understanding of the features of the present invention and the efficacies achieved, the preferred embodiments and detailed descriptions are provided as follows:
The present invention is to improve the disadvantage that the conventional spinel nickel-cobalt oxide material is not easily sintered and dense, and the highly densified spinel nickel-cobalt oxide target can be obtained by adding the alkali metal ion-containing powder.
First, please refer to the first drawing, which is a manufacturing flow chart of a preferred embodiment of the present invention; as shown, the present invention discloses a method for manufacturing a spinel nickel-cobalt oxide target, the manufacturing method The system consists of the following steps:
Step S10, mixing a spinel nickel cobalt oxide powder with a powder containing an alkali metal ion to form a mixed powder;
Step S20, mixing the mixed powder with a solvent to form a mixed powder slurry, and grinding the mixed powder slurry;
In step S30, the mixed powder slurry is dried, heated and repeatedly sieved to form a target powder; and in step S40, the target powder is pressed into a molded body and sintered to form a spinel nickel cobalt oxide. Target.
In step S10, the alkali metal ion-containing powder is selected from sodium hydroxide or lithium hydroxide.
In step S20, the solvent is selected from one of the group consisting of deionized water and alcohol.
In step S30, the heating temperature is 700 °C.
In step S40, the sintering temperature is 1000 °C.
The invention adopts a spinel nickel-cobalt oxide ceramic target with lithium hydroxide or sodium hydroxide to make the relative density thereof more than 90%, so as to improve the defect that the spinel nickel-cobalt oxide material is not easily sintered and compacted, and A highly densified spinel nickel-cobalt oxide target can be added by an appropriate ratio of lithium hydroxide or sodium hydroxide.
Please refer to the second figure, which is a diagram showing the relationship between the alkali metal ion addition ratio and the target density and the relative density of the target according to a preferred embodiment of the present invention; as shown in the figure, the alkali metal ion powder disclosed in the present invention is shown. In this embodiment, sodium ion is used as a description. When the amount of sodium hydroxide added is 2 wt%, the relative density of the sodium hydroxide-doped nickel-cobalt oxide target is increased from 78% to 94%, as opposed to The relative density (78%) of the target without sodium hydroxide is added, the relative density of the target is greatly increased, and the strength of the target is also increased, that is, the addition of sodium hydroxide to the spinel nickel-cobalt oxide target Helping the sintering of the spinel nickel-cobalt oxide target, the target densification is also increased, and the relative density of the target is also greatly increased, that is, the life of the target is increased, and the time for the target replacement can be reduced in the industry. cost. Therefore, the addition of the alkali metal ion powder not only enhances the compactness of the spinel nickel-cobalt oxide target, but also improves the life and strength of the target.
Furthermore, please refer to the third drawing, which is a micrograph of the surface type of the highly densified spinel nickel-cobalt oxide target according to a preferred embodiment of the present invention; as shown, the present invention The high-density spinel-nickel-cobalt oxide target containing alkali metal ions is sintered at a high temperature (about 1500 ° C), and the spinel nickel-cobalt oxide is circularly molded to form spinel nickel-cobalt The oxide dense ceramic circular target, under high temperature heat treatment, promotes the sintering of the added alkali metal ions without causing deformation, cracks or pores of the spinel nickel-cobalt oxide target, and still forms a circular target shape. This application of the target is beneficial. The surface microstructure of the target shows that the microstructure of the target surface is quite dense, and there are only some micro-closed pores, but it does not affect the compactness of the target. Therefore, the relative density of the target is 94%, which can be used as a practical application. Commercial target.
In summary, the method for producing a spinel nickel-cobalt oxide target of the present invention is characterized in that "the spinel nickel-cobalt oxide is added with an alkali metal ion sintering accelerator" as a main strategy, and the spinel nickel can be effectively improved. The cobalt oxide target material itself has the disadvantages of being difficult to be sintered and dense, and has the advantages of densification, improvement of target strength, reduction of cost of target loss, etc., but the above is only a preferred embodiment of the present invention. The present invention is not intended to limit the scope of the present invention, and the equivalents and modifications of the shapes, structures, features and spirits of the present invention should be included in the scope of the present invention.
The invention is a novelty, progressive and available for industrial use, and should meet the requirements of the patent application stipulated in the Patent Law of China, and the invention patent application is filed according to law, and the prayer bureau will grant the patent as soon as possible. prayer.

    無No

第一圖:其係為本發明之一較佳實施例之製造流程圖;
第二圖:其係為本發明之一較佳實施例之鹼金屬離子添加比例與靶材密度及靶材相對密度關係圖;及
第三圖:其係為本發明之一較佳實施例之高緻密化尖晶石鎳鈷氧化物靶材之表面型態顯微示意照片圖。
First: it is a manufacturing flow chart of a preferred embodiment of the present invention;
2 is a diagram showing a relationship between an alkali metal ion addition ratio and a target density and a target relative density according to a preferred embodiment of the present invention; and a third diagram: it is a preferred embodiment of the present invention. Photomicrograph of a surface morphology of a highly densified spinel nickel-cobalt oxide target.

Claims (6)

一種尖晶石鎳鈷氧化物靶材之製造方法,其係包含下列步驟:
混合一尖晶石鎳鈷氧化物粉末與一含鹼金屬離子之粉末成一混合粉末;
將該混合粉末與一溶劑混合形成一混合粉末漿體,將該混合粉末漿體進行研磨;
將該混合粉末漿體烘乾,加熱及過篩形成一靶材粉末;及
將該靶材粉末壓製成一模製體,進行燒結以形成一尖晶石鎳鈷氧化物靶材。
A method for producing a spinel nickel-cobalt oxide target, comprising the steps of:
Mixing a spinel nickel-cobalt oxide powder with a powder containing an alkali metal ion to form a mixed powder;
Mixing the mixed powder with a solvent to form a mixed powder slurry, and grinding the mixed powder slurry;
The mixed powder slurry is dried, heated and sieved to form a target powder; and the target powder is pressed into a molded body and sintered to form a spinel nickel cobalt oxide target.
如申請專利範圍第1項所述之製造方法,其中該含鹼金屬離子之粉末其係選自於氫氧化鈉及氫氧化鋰或上述之任意混合所組成群組之其中之一。The manufacturing method according to claim 1, wherein the alkali metal ion-containing powder is selected from the group consisting of sodium hydroxide and lithium hydroxide or any combination of the above. 如申請專利範圍第1項所述之製造方法,其中該溶劑其係選自於去離子水及酒精所組成群組之其中之一。The manufacturing method according to claim 1, wherein the solvent is selected from the group consisting of deionized water and alcohol. 如申請專利範圍第1項所述之製造方法,其中於加熱步驟中,其加熱溫度為700°C。The manufacturing method according to claim 1, wherein in the heating step, the heating temperature is 700 °C. 如申請專利範圍第1項所述之製造方法,其中於燒結步驟中,其燒結溫度為1000°C。The manufacturing method according to claim 1, wherein in the sintering step, the sintering temperature is 1000 °C. 如申請專利範圍第1項所述之製造方法,其中該尖晶石鎳鈷氧化物靶材之相對密度為90%以上。The manufacturing method according to claim 1, wherein the spinel nickel-cobalt oxide target has a relative density of 90% or more.
TW101147778A 2012-12-17 2012-12-17 Preparation method of spinel nickel cobalt oxide target TWI476291B (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101495666A (en) * 2006-07-27 2009-07-29 日矿金属株式会社 Lithium-containing transition metal oxide target, process for producing the same and lithium ion thin-film secondary battery
CN102650037A (en) * 2012-05-09 2012-08-29 中国科学院上海技术物理研究所 Method for manufacturing magnetron sputtering target material of Mn-Co-Ni-O thin film

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101495666A (en) * 2006-07-27 2009-07-29 日矿金属株式会社 Lithium-containing transition metal oxide target, process for producing the same and lithium ion thin-film secondary battery
CN102650037A (en) * 2012-05-09 2012-08-29 中国科学院上海技术物理研究所 Method for manufacturing magnetron sputtering target material of Mn-Co-Ni-O thin film

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