TWI472636B - Coating method and shading element using the method - Google Patents

Coating method and shading element using the method Download PDF

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TWI472636B
TWI472636B TW97140833A TW97140833A TWI472636B TW I472636 B TWI472636 B TW I472636B TW 97140833 A TW97140833 A TW 97140833A TW 97140833 A TW97140833 A TW 97140833A TW I472636 B TWI472636 B TW I472636B
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metal palladium
gas
coating
substrate
power
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TW97140833A
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TW201016869A (en
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Hsin Chin Hung
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Hon Hai Prec Ind Co Ltd
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鍍膜方法及應用該鍍膜方法之遮光元件 Coating method and shading element using the coating method

本發明涉及一種鍍膜方法及應用該鍍膜方法之遮光元件。 The present invention relates to a coating method and a shading element using the coating method.

光學薄膜基本上是通過干涉作用而達到其效果,是指在光學元件上或獨立基材上鍍上一層或多層介電質膜或金屬膜或介電質膜膜堆或金屬膜膜堆來改變光波傳遞特性。而目前很多光學儀器,如感測器、半導體雷射、干涉儀、近視眼鏡、太陽眼鏡、光纖通訊等都需光學薄膜。 The optical film basically achieves its effect by interference, which means that one or more layers of dielectric film or metal film or dielectric film film stack or metal film film stack are plated on the optical element or on the independent substrate to change. Light wave transmission characteristics. At present, many optical instruments, such as sensors, semiconductor lasers, interferometers, glasses, sunglasses, fiber optic communications, etc., require optical films.

目前,光學薄膜製作以物理蒸鍍法為主(physics vapor deposition,簡稱PVD),該方法為將薄膜材料由固態轉化為氣態或離子態,氣態或離子態材料,由蒸發源穿越空間,抵達玻璃表面,材料抵達玻璃表面後,將沉積而逐漸形成薄膜。通常,為使製作之薄膜擁有高純度,鍍膜之制程須於高真空環境下完成。由此延伸出真空鍍膜,一般做法為將基片以超音波洗淨機洗淨,洗淨後排上夾具,送入鍍膜機,開始加熱和抽真空。達到高真空後,開始鍍膜。鍍膜時,以電子槍方式或電阻式對蒸鍍源加熱,將鍍膜材料變成離子態,蒸鍍時間則視層數和程式不同而有長短。鍍膜完畢後,待溫度冷卻後取出。 At present, the optical film is produced by physical vapor deposition (PVD), which converts the film material from a solid state into a gaseous or ionic state, a gaseous or ionic material, and the evaporation source passes through the space to reach the glass. After the surface reaches the surface of the glass, it will deposit and gradually form a film. Generally, in order to make the film produced with high purity, the coating process must be completed under a high vacuum environment. Therefore, the vacuum coating is extended. Generally, the substrate is washed by an ultrasonic cleaning machine, washed, placed on a jig, sent to a coating machine, and heated and evacuated. After the high vacuum is reached, the coating is started. At the time of coating, the vapor deposition source is heated by an electron gun method or a resistive type to change the plating material into an ionic state, and the vapor deposition time varies depending on the number of layers and the program. After the coating is completed, remove it after the temperature has cooled.

然而,在對遮光元件進行鍍膜之過程中,都是通過金屬膜堆疊達 到遮光效果,當需要得到不同光學參數之遮光膜層時,就要不斷改變靶材和相關參數,使得鍍膜過程相當複雜。 However, in the process of coating the shading element, it is stacked through the metal film. To the shading effect, when it is necessary to obtain a light-shielding film layer with different optical parameters, the target and related parameters are constantly changed, so that the coating process is quite complicated.

有鑑於此,有必要提供一種在鍍膜過程中可任意改變遮光效果之鍍膜方法及應用該鍍膜方法之遮光元件。 In view of the above, it is necessary to provide a coating method which can arbitrarily change the light-shielding effect during the coating process and a light-shielding member to which the coating method is applied.

一種遮光元件之鍍膜方法,其包括以下步驟:提供一鍍膜機、一金屬鈀材、一試驗基材及一待鍍膜基材;將金屬鈀材及試驗基材放入鍍膜機之真空腔後,調整鍍膜機之電子束之功率及鍍膜機氣體源之氣體釋放量,使因電子束轟擊產生之金屬鈀材離子與所釋放之氣體完全反應;取出試驗基材,並將待鍍膜基材放入真空腔,通過調整電子束之功率或氣體源之氣體釋放量之一,在所述待鍍膜基材上形成一層膜層,使從靠近待鍍膜基材一側到遠離待鍍膜基材一側,所述膜層中金屬鈀材單質之沉積濃度逐漸增加,而金屬鈀材化合物之沉積濃度逐漸減小;當膜層之電阻值保持不變後,鍍膜完成。 A coating method for a light shielding component, comprising the steps of: providing a coating machine, a metal palladium material, a test substrate and a substrate to be coated; and placing the metal palladium material and the test substrate into a vacuum chamber of the coating machine, Adjusting the power of the electron beam of the coating machine and the gas release amount of the gas source of the coating machine, so that the metal palladium ions generated by the electron beam bombardment completely react with the released gas; the test substrate is taken out, and the substrate to be coated is placed a vacuum chamber, by adjusting one of the power of the electron beam or the gas release amount of the gas source, forming a film layer on the substrate to be coated, from a side close to the substrate to be coated to a side away from the substrate to be coated, The deposition concentration of the metal palladium material in the film layer is gradually increased, and the deposition concentration of the metal palladium compound is gradually decreased; when the resistance value of the film layer is kept unchanged, the coating film is completed.

一種遮光元件,其包括一待鍍膜基材及一膜層,所述膜層為金屬鈀材及金屬鈀材反應物之混合體,從靠近待鍍膜基材一側到遠離待鍍膜基材一側,所述膜層中金屬鈀材單質之沉積濃度逐漸增加,而金屬鈀材反應物之沉積濃度逐漸減小,所述金屬鈀材單質具有反射光線之作用,所述金屬鈀材反應物具有吸收光線之作用。 A light shielding member comprising a substrate to be coated and a film layer, the film layer being a mixture of metal palladium material and metal palladium material reactant, from a side close to a substrate to be coated to a side away from a substrate to be coated The deposition concentration of the metal palladium material in the film layer is gradually increased, and the deposition concentration of the metal palladium material reactant is gradually decreased, the metal palladium material element has a function of reflecting light, and the metal palladium material reactant has absorption. The role of light.

相較於先前技術,本發明通過不斷調整鍍膜機之電子束之功率和通入真空腔內之氣體之量,而無需改變金屬鈀材之材料,就可得到不同遮光效果之遮光元件。 Compared with the prior art, the present invention can obtain different shading effect shading elements by continuously adjusting the power of the electron beam of the coating machine and the amount of gas flowing into the vacuum chamber without changing the material of the metal palladium material.

10‧‧‧基材 10‧‧‧Substrate

20‧‧‧膜層 20‧‧‧ film layer

圖1係本發明第一實施方式提供之遮光元件之鍍膜方法之流程圖;圖2a係圖1中金屬鈀材離子之蒸發量與時間之關係曲線圖;圖2b係圖1中氣體之釋放量與時間之關係曲線圖;圖3係本發明第二實施方式提供之遮光元件之鍍膜方法之流程圖;圖4a係圖3中金屬鈀材離子之蒸發量與時間之關係曲線圖;圖4b係圖3中氣體之釋放量與時間之關係曲線圖;圖5係本發明第三實施方式提供之遮光元件之鍍膜方法之流程圖;圖6a係圖5中金屬鈀材離子之蒸發量與時間之關係曲線圖;圖6b係圖5中氣體之釋放量與時間之關係曲線圖;圖7係本發明第四實施方式提供之遮光元件之鍍膜方法之流程圖;圖8a係圖7中金屬鈀材離子之蒸發量與時間之關係曲線圖;圖8b係圖7中氣體之釋放量與時間之關係曲線圖;圖9係本發明實施方式提供之遮光元件之立體示意圖;圖10a係本發明實施方式提供之遮光元件之光學效果示意圖;圖10b係本發明實施方式提供之另一遮光元件之光學效果示意圖。 1 is a flow chart of a method for coating a light-shielding member according to a first embodiment of the present invention; FIG. 2a is a graph showing the relationship between evaporation amount of metal palladium ions and time in FIG. 1; FIG. 2b is a gas release amount in FIG. Figure 3 is a flow chart of a method for coating a light-shielding member according to a second embodiment of the present invention; Figure 4a is a graph showing the relationship between the evaporation amount of metal palladium ions and time in Figure 3; Figure 3 is a graph showing the relationship between the amount of gas released and time; Figure 5 is a flow chart of the method for coating the shading element according to the third embodiment of the present invention; Figure 6a is the evaporation amount and time of the metal palladium ion in Figure 5. FIG. 6b is a graph showing the relationship between the release amount of the gas and the time in FIG. 5; FIG. 7 is a flow chart of the method for coating the shading element according to the fourth embodiment of the present invention; and FIG. 8a is the metal palladium material of FIG. FIG. 8b is a graph showing the relationship between the amount of gas released in FIG. 7 and time; FIG. 9 is a perspective view of the shading element provided by the embodiment of the present invention; FIG. 10a is an embodiment of the present invention; provide The optical effect of the light shielding member schematic; Fig. 10b based optical effect of the light shielding elements of another embodiment of the present invention is provided FIG.

以下將結合附圖對本發明作進一步之詳細說明。 The invention will be further described in detail below with reference to the accompanying drawings.

第一實施方式 First embodiment

如圖1及圖2a-2b所示,本發明第一實施方式提供之遮光元件之鍍膜方法,其包括以下步驟:S101a:提供一鍍膜機、一金屬鈀材、一試驗基材及一待鍍膜基材;所述鍍膜機包括一真空腔、一電子槍及一汽體源,所述電子槍、汽體源、金屬鈀材及基材都位於真空腔內;所述電子槍用於放射出高強度之電子束使金屬鈀材受熱蒸發為離子狀態,所述汽體源用於釋放出與金屬鈀材離子反應之氣體;所述金屬鈀材具有較好之反射光線之作用,且所述金屬鈀材與汽體源釋放出之氣體之金屬鈀材反應物具有較高之吸光效果,所述金屬鈀材可為鉻(Cr)或鈦(Ti);所述試驗基材和待鍍膜基材為同一材質基材,其為透明玻璃;S102a:將金屬鈀材及試驗基材放入鍍膜機之真空腔後,將真空腔抽真空,鍍膜機之電子束以一第一功率轟擊金屬鈀材,使金屬鈀材離子化;在將試驗基材放入真空腔前還需對試驗基材作洗淨處理,防止基材上之雜質影響鍍膜效果,當金屬鈀材受熱蒸發後,以金屬鈀材離子之狀態位於真空腔內;S103a:根據第一功率下真空腔內之金屬鈀材離子之蒸發量,鍍膜機之氣體源釋放出氣體,使氣體每秒之釋放量小於每秒蒸發之金屬鈀材離子完全反應所需要之氣體釋放量;根據鍍膜機所顯示之在第一功率下之金屬鈀材離子之蒸發量,然後通過計算得出使 每秒蒸發之金屬鈀材離子完全反應所需之氣體釋放量,記為理論釋放量C,控制鍍膜機之氣體源再以小於理論釋放量C之初始釋放量A釋放出氣體;在本實施方式中,所述氣體為氧氣或氮氣,所述金屬鈀材與所述氣體反應後之金屬鈀材反應物為氧為鈦、氧化鉻、氮化鈦及氮化鉻中之一種;S104a:逐漸增加氣體源氣體之釋放量,並同時監測試驗基材上所鍍之膜層之電阻值,當膜層之電阻值保持不變後,記下此時之氣體源之氣體釋放量為臨界釋放量B,電子束功率為第二功率,且所述第二功率等於第一功率;根據所鍍膜層所要達到之遮光效果,可以任意改變增加氣體釋放量之速率,從而使膜層發生變化;在膜層不斷之氧化或氮化之過程中,由於氧化完全之膜層電阻值最大,完全沒有氧化膜層之電阻值最小,且膜層氧化或氮化越完全電阻值越大,鍍膜機通過即時監控所鍍膜層之電阻值,可判斷出金屬鈀材離子是否完全;當膜層之電阻值在一預先設定之時間內保持不變就表明金屬鈀材離子氧化或氮化完全,並記下此時氣體源之氣體釋放量為臨界釋放量B;S105a:取出試驗基材,並將待鍍膜基材放入真空腔,氣體源以一釋放量與臨界釋放量B相等之預設釋放量D釋放出氣體,在T時刻,提高電子束之功率直至第三功率,且所述第三功率高於第二功率,使金屬鈀材離子每秒之蒸發量大於氣體源每秒釋放之氣體完全反應所需要之氣體釋放量,並在所述待鍍膜基材上逐漸形成一層膜層;使用者可根據遮光元件之遮光效果設定第三功率;S106a:當膜層之電阻值保持不變後,鍍膜完成,且從靠近待鍍膜基材一側到遠離待鍍膜基材一側,所述膜層中金屬鈀材單質之 沉積濃度逐漸增加,而金屬鈀材化合物之沉積濃度逐漸減小。 As shown in FIG. 1 and FIG. 2a-2b, a method for coating a light-shielding member according to a first embodiment of the present invention includes the following steps: S101a: providing a coating machine, a metal palladium material, a test substrate, and a film to be coated. a substrate comprising: a vacuum chamber, an electron gun and a vapor source, wherein the electron gun, the vapor source, the metal palladium material and the substrate are all located in a vacuum chamber; and the electron gun is used to emit high-intensity electrons The beam evaporates the metal palladium material into an ionic state, the vapor source is used to release a gas which reacts with the metal palladium ion; the metal palladium material has a better effect of reflecting light, and the metal palladium material and The metal palladium reactant of the gas released from the vapor source has a high light absorption effect, and the metal palladium material may be chromium (Cr) or titanium (Ti); the test substrate and the substrate to be coated are the same material. a substrate, which is a transparent glass; S102a: after the metal palladium material and the test substrate are placed in a vacuum chamber of the coating machine, the vacuum chamber is evacuated, and the electron beam of the coating machine bombards the metal palladium material with a first power to make the metal Palladium ionization; placing the test substrate Before the vacuum chamber, the test substrate needs to be washed to prevent the impurities on the substrate from affecting the coating effect. When the metal palladium material is evaporated by heat, it is placed in the vacuum chamber in the state of metal palladium ions; S103a: according to the first power The evaporation of the metal palladium ions in the lower vacuum chamber, the gas source of the coating machine releases the gas, so that the release amount of the gas per second is less than the gas release amount required for the complete reaction of the evaporated metal palladium ions per second; according to the coating machine The amount of evaporation of the metal palladium ions at the first power is then calculated by calculation The gas release amount required for the complete reaction of the metal palladium ion evaporated per second is recorded as the theoretical release amount C, and the gas source of the control coater is released to release the gas at an initial release amount A smaller than the theoretical release amount C; The gas is oxygen or nitrogen, and the metal palladium material reacted with the gas is a kind of oxygen, such as titanium, chromium oxide, titanium nitride and chromium nitride; S104a: gradually increasing The amount of gas source gas released, and simultaneously monitor the resistance value of the film layer coated on the test substrate. When the resistance value of the film layer remains unchanged, note that the gas release amount of the gas source at this time is the critical release amount B. The electron beam power is the second power, and the second power is equal to the first power; according to the light shielding effect to be achieved by the coating layer, the rate of increasing the gas release amount can be arbitrarily changed, thereby changing the film layer; In the process of continuous oxidation or nitridation, since the oxidation resistance of the film layer is the largest, the resistance value of the oxide film layer is completely minimized, and the oxidation resistance or nitridation of the film layer is more complete, and the coating machine passes through Monitoring the resistance value of the coating layer can determine whether the metal palladium ion is complete; when the resistance value of the film layer remains unchanged for a predetermined time, it indicates that the metal palladium ion is completely oxidized or nitrided, and this is recorded. The gas release amount of the gas source is the critical release amount B; S105a: the test substrate is taken out, and the substrate to be coated is placed in a vacuum chamber, and the gas source is released by a preset release amount D equal to the release amount and the critical release amount B. Out of the gas, at time T, increasing the power of the electron beam up to the third power, and the third power is higher than the second power, so that the evaporation of the metal palladium ions per second is greater than the complete reaction of the gas released by the gas source per second. The required amount of gas is released, and a film layer is gradually formed on the substrate to be coated; the third power can be set according to the shading effect of the shading element; S106a: when the resistance value of the film layer remains unchanged, the coating is completed. And from the side of the substrate to be coated to the side away from the substrate to be coated, the metal palladium in the film is simple The deposition concentration is gradually increased, and the deposition concentration of the metal palladium compound is gradually decreased.

當鍍膜完成後,在真空腔內放入另一塊待鍍膜基材,重複鍍膜過程,所得遮光元件之光學參數相同。 After the coating is completed, another substrate to be coated is placed in the vacuum chamber, and the coating process is repeated, and the optical parameters of the obtained shading elements are the same.

第二實施方式 Second embodiment

如圖3及圖4a-4b所示,本發明第二實施方式提供之遮光元件之鍍膜方法,其包括以下步驟:S101b:同第一實施方式S101a;S102b:同第一實施方式S102a;S103b:根據第一功率下真空腔內之金屬鈀材離子之蒸發量,鍍膜機之氣體源釋放出氣體,使氣體每秒之釋放量大於每秒蒸發之金屬鈀材離子完全反應所需要之氣體釋放量;根據鍍膜機所顯示之在第一功率下之金屬鈀材離子之蒸發量,然後通過計算得出使每秒蒸發之金屬鈀材離子完全反應每秒氣體之釋放量,記為理論釋放量C,控制鍍膜機之氣體源再以大於理論釋放量C之初始釋放量A釋放出氣體;在本實施方式中,所述氣體為氧氣或氮氣,所述金屬鈀材與所述氣體反應後之金屬鈀材反應物為氧為鈦、氧化鉻、氮化鈦及氮化鉻中之一種;S104b:不斷提高電子束轟擊金屬鈀材之功率,並同時監測試驗基材上所鍍之膜層之電阻值,當膜層之電阻值發生改變時,記此時電子束之功率為第二功率,氣體釋放量為臨界釋放量B,且所述臨界釋放量B等於初始釋放量A;根據所鍍膜層所要達到之遮光效果,可以任意改變增加電子束功率之速率,從而使膜層發生變化;在膜層不斷之氧化或氮化之過程中,由於氧化完全之膜層電 阻值最大,完全沒有氧化膜層之電阻值最小,且膜層氧化或氮化越完全電阻值越大,鍍膜機通過即時監控所鍍膜層之電阻值,可判斷出金屬鈀材離子是否完全;當膜層之電阻值在一預先設定之時間內保持不變就表明金屬鈀材離子氧化或氮化完全;S105b:取出試驗基材,並將待鍍膜基材放入真空腔,氣體源以一釋放量與臨界釋放量B相等之預設釋放量D釋放出氣體,在T時刻,提高電子束之功率直至第三功率,且第三功率高於第二功率,使金屬鈀材離子每秒之蒸發量大於氣體源每秒釋放之氣體完全反應所需要之量,並在所述待鍍膜基材上逐漸形成一層膜層;使用者可根據遮光元件之遮光效果設定第三功率;S106b:同第一實施方式S106a。 As shown in FIG. 3 and FIG. 4a-4b, a method for coating a light-shielding element according to a second embodiment of the present invention includes the following steps: S101b: same as first embodiment S101a; S102b: same as first embodiment S102a; S103b: According to the evaporation amount of the metal palladium ions in the vacuum chamber at the first power, the gas source of the coating machine releases the gas, so that the release amount of the gas per second is greater than the gas release amount required for the complete reaction of the evaporated metal palladium ions per second. According to the evaporation amount of the metal palladium ion at the first power shown by the coating machine, the calculated amount of the gas discharged per second of the metal palladium ion per second is calculated by the calculation, which is recorded as the theoretical release amount C. And controlling the gas source of the coating machine to release the gas at an initial release amount A greater than the theoretical release amount C; in the embodiment, the gas is oxygen or nitrogen, and the metal palladium material reacts with the gas The palladium reactant is one of oxygen, titanium oxide, chromium oxide, titanium nitride and chromium nitride; S104b: continuously increasing the power of the electron beam bombarding the metal palladium material, and simultaneously monitoring the film coated on the test substrate The resistance value, when the resistance value of the film layer changes, it is recorded that the power of the electron beam is the second power, the gas release amount is the critical release amount B, and the critical release amount B is equal to the initial release amount A; The light-shielding effect of the coating layer can be arbitrarily changed to increase the rate of electron beam power, thereby changing the film layer; in the process of continuous oxidation or nitridation of the film layer, due to the complete oxidation of the film layer The resistance value is the largest, the resistance value of the oxide film layer is the smallest, and the oxidation resistance or nitridation of the film layer is more complete. The coating machine can judge whether the metal palladium ion is complete by monitoring the resistance value of the coating layer in real time; When the resistance value of the film layer remains unchanged for a predetermined time, it indicates that the metal palladium ion is completely oxidized or nitrided; S105b: the test substrate is taken out, and the substrate to be coated is placed in a vacuum chamber, and the gas source is The preset release amount D, which is equal to the critical release amount B, releases the gas. At time T, the power of the electron beam is increased up to the third power, and the third power is higher than the second power, so that the metal palladium ions are generated per second. The amount of evaporation is greater than the amount required for the gas released by the gas source to be completely reacted, and a film layer is gradually formed on the substrate to be coated; the third power can be set according to the shading effect of the shading element; S106b: the same An embodiment S106a.

當鍍膜完成後,在真空腔內放入另一塊待鍍膜基材,重複鍍膜過程,所得遮光元件之光學參數相同。 After the coating is completed, another substrate to be coated is placed in the vacuum chamber, and the coating process is repeated, and the optical parameters of the obtained shading elements are the same.

第三實施方式 Third embodiment

如圖5及圖6a-6b所示,本發明第三實施方式提供之遮光元件之鍍膜方法,其包括以下步驟:S101c:同第一實施方式S101a;S102c:同第一實施方式S102a;S103c:根據第一功率下真空腔內之金屬鈀材離子之蒸發量,鍍膜機之氣體源釋放出氣體,使氣體每秒之釋放量小於每秒蒸發之金屬鈀材離子完全反應所需要之氣體釋放量;根據鍍膜機所顯示之在第一功率下之金屬鈀材離子之蒸發量,然後通過計算得出使 每秒蒸發之金屬鈀材離子完全反應所需氣體釋放量,記為理論釋放量C,控制鍍膜機之氣體源再以小於理論釋放量C之初始釋放量A釋放出氣體;在本實施方式中,所述氣體為氧氣或氮氣,所述金屬鈀材與所述氣體反應後之金屬鈀材反應物為氧為鈦、氧化鉻、氮化鈦及氮化鉻中之一種;S104c:逐漸增加氣體源氣體之釋放量,並同時監測試驗基材上所鍍之膜層之電阻值,當膜層之電阻值保持不變後,記下此時之氣體源之釋放量為臨界釋放量B,電子束功率為第二功率,且所述第二功率等於第一功率;根據所鍍膜層所要達到之遮光效果,可以任意改變增加氣體釋放量之速率,從而使膜層發生變化;在膜層不斷之氧化或氮化之過程中,由於氧化完全之膜層電阻值最大,完全沒有氧化膜層之電阻值最小,且膜層氧化或氮化越完全電阻值越大,鍍膜機通過即時監控所鍍膜層之電阻值,可判斷出金屬鈀材離子是否完全;當膜層之電阻值在一預先設定之時間內保持不變就表明金屬鈀材離子氧化或氮化完全;S105c:取出試驗基材,並將待鍍膜基材放入真空腔,在T時刻,電子束以等於第二功率之第三功率轟擊金屬鈀材,逐漸降低氣體源直到一預設釋放量D後保持氣體源之釋放量不變,且所述預設釋放量D小於臨界釋放量B;使金屬鈀材離子每秒之蒸發量大於氣體源每秒釋放之氣體完全反應所需要之氣體釋放量,並在所述待鍍膜基材上逐漸形成一層膜層;使用者通過調整臨界釋放量B之減小速率預設釋放量D之值之大小,可得到不同遮光效果之遮光元件;S106c:同第一實施方式S106a。 As shown in FIG. 5 and FIG. 6a-6b, a method for coating a light-shielding element according to a third embodiment of the present invention includes the following steps: S101c: same as first embodiment S101a; S102c: same as first embodiment S102a; S103c: According to the evaporation amount of the metal palladium ions in the vacuum chamber at the first power, the gas source of the coating machine releases the gas, so that the release amount of the gas per second is less than the gas release amount required for the complete reaction of the evaporated metal palladium ions per second. According to the evaporation amount of the metal palladium ion at the first power shown by the coating machine, and then calculated The gas release amount required for the complete reaction of the metal palladium ion evaporated per second is recorded as the theoretical release amount C, and the gas source of the control coater releases the gas at an initial release amount A smaller than the theoretical release amount C; in the present embodiment The gas is oxygen or nitrogen, and the metal palladium material reacted with the gas is a kind of one of oxygen, titanium, chromium oxide, titanium nitride and chromium nitride; S104c: gradually increasing gas The release amount of the source gas, and simultaneously monitor the resistance value of the film layer coated on the test substrate. When the resistance value of the film layer remains unchanged, note that the release amount of the gas source at this time is the critical release amount B, electron The beam power is the second power, and the second power is equal to the first power; according to the shielding effect to be achieved by the coating layer, the rate of increasing the gas release amount can be arbitrarily changed, thereby causing the film layer to change; In the process of oxidation or nitridation, since the oxidation resistance of the film layer is the largest, the resistance value of the oxide film layer is completely minimized, and the oxidation resistance or nitridation of the film layer is more complete, and the coating machine is monitored by real time. The resistance value of the coating layer can be judged whether the metal palladium ion is complete; when the resistance value of the film layer remains unchanged for a predetermined time, the metal palladium ion is completely oxidized or nitrided; S105c: the test substrate is taken out And placing the substrate to be coated into a vacuum chamber, at time T, the electron beam bombards the metal palladium with a third power equal to the second power, and gradually reduces the gas source until a predetermined release amount D maintains the release of the gas source Invariably, and the preset release amount D is less than the critical release amount B; the evaporation amount of the metal palladium ion per second is greater than the gas release amount required for the complete reaction of the gas released by the gas source per second, and the film to be coated is A film layer is gradually formed on the substrate; the user can obtain a light-shielding element with different light-shielding effects by adjusting the value of the release rate of the critical release amount B by a predetermined reduction amount D; S106c: same as the first embodiment S106a.

當鍍膜完成後,在真空腔內放入另一塊待鍍膜基材,重複鍍膜過程,所得遮光元件之光學參數相同。 After the coating is completed, another substrate to be coated is placed in the vacuum chamber, and the coating process is repeated, and the optical parameters of the obtained shading elements are the same.

第四實施方式 Fourth embodiment

如圖7及圖8a-8b所示,本發明第四實施方式提供之遮光元件之鍍膜方法,其包括以下步驟:S101d:同第一實施方式S101a;S102d:同第一實施方式S102a;S103d:根據第一功率下真空腔內之金屬鈀材離子之蒸發量,鍍膜機之氣體源釋放出氣體,使氣體每秒之釋放量大於每秒蒸發之金屬鈀材離子完全反應所需要之氣體釋放量;根據鍍膜機所顯示之在第一功率下之金屬鈀材離子之蒸發量,然後通過計算得出使每秒蒸發之金屬鈀材離子完全反應所需氣體釋放量,記為理論釋放量C,控制鍍膜機之氣體源再以大於理論釋放量C之初始釋放量A釋放出氣體;在本實施方式中,所述氣體為氧氣或氮氣,所述金屬鈀材與所述氣體反應後之金屬鈀材反應物為氧為鈦、氧化鉻、氮化鈦及氮化鉻中之一種;S104d:不斷提高電子束轟擊金屬鈀材之功率,並同時監測試驗基材上所鍍之膜層之電阻值,當膜層之電阻值發生改變時,記此時電子束之功率為第二功率,氣體源釋放量為臨界釋放量B,且所述臨界釋放量B等於所述初始釋放量A;根據所鍍膜層所要達到之遮光效果,可以任意改變增加電子束功率之速率,從而使膜層發生變化;在膜層不斷之氧化或氮化之過程中,由於氧化完全之膜層電阻值最大,完全沒有氧化膜層之電阻值最小,且膜層氧化 或氮化越完全電阻值越大,鍍膜機通過即時監控所鍍膜層之電阻值,可判斷出金屬鈀材離子是否完全;當膜層之電阻值在一預先設定之時間內保持不變就表明金屬鈀材離子氧化或氮化完全;S105d:取出試驗基材,並將待鍍膜基材放入真空腔,在T時刻,電子束以等於第二功率之第三功率轟擊金屬鈀材,逐漸降低氣體源之氣體之釋放量,直到一小於臨界釋放量B之預設釋放量D後保持氣體源之釋放量不變;使金屬鈀材離子每秒之蒸發量大於氣體源每秒釋放之氣體完全反應所需要之氣體釋放量,並在所述待鍍膜基材上逐漸形成一層膜層;使用者通過調整臨界釋放量B之減小速率或預設釋放量D之值之大小,可得到不同遮光效果之遮光元件;S106d:同第一實施方式S106a。 As shown in FIG. 7 and FIG. 8a-8b, a method for coating a light-shielding element according to a fourth embodiment of the present invention includes the following steps: S101d: same as first embodiment S101a; S102d: same as first embodiment S102a; S103d: According to the evaporation amount of the metal palladium ions in the vacuum chamber at the first power, the gas source of the coating machine releases the gas, so that the release amount of the gas per second is greater than the gas release amount required for the complete reaction of the evaporated metal palladium ions per second. According to the evaporation amount of the metal palladium ion at the first power shown by the coating machine, and then calculating the gas release amount required to completely react the metal palladium ion evaporated per second, which is recorded as the theoretical release amount C, The gas source of the coating machine is controlled to release the gas at an initial release amount A greater than the theoretical release amount C. In the present embodiment, the gas is oxygen or nitrogen, and the metal palladium reacts with the gas to form a metal palladium. The material reactant is one of oxygen, titanium oxide, chromium oxide, titanium nitride and chromium nitride; S104d: continuously increasing the power of the electron beam bombarding the metal palladium material, and simultaneously monitoring the coating layer on the test substrate The resistance value, when the resistance value of the film layer changes, it is noted that the power of the electron beam is the second power, the gas source release amount is the critical release amount B, and the critical release amount B is equal to the initial release amount A; According to the shading effect of the coating layer, the rate of increasing the power of the electron beam can be arbitrarily changed, thereby changing the film layer; in the process of continuous oxidation or nitridation of the film layer, the maximum resistance of the film layer due to oxidation is the largest. There is no oxide layer at all, the resistance value is the smallest, and the film is oxidized. Or the more complete the nitriding resistance value, the coating machine can determine whether the metal palladium ion is complete by monitoring the resistance value of the coating layer in real time; when the resistance value of the film layer remains unchanged for a predetermined time, it indicates The metal palladium ion is completely oxidized or nitrided; S105d: the test substrate is taken out, and the substrate to be coated is placed in a vacuum chamber, and at time T, the electron beam bombards the metal palladium at a third power equal to the second power, and gradually decreases The amount of gas released by the gas source is maintained until the release amount of the gas source is constant after a predetermined release amount D of less than the critical release amount B; the evaporation of the metal palladium ions per second is greater than the gas released per second by the gas source. The amount of gas required for the reaction is released, and a film layer is gradually formed on the substrate to be coated; the user can obtain different light shielding by adjusting the decreasing rate of the critical release amount B or the value of the preset release amount D. The light-shielding element of the effect; S106d: same as the first embodiment S106a.

當鍍膜完成後,在真空腔內放入另一塊待鍍膜基材,重複鍍膜過程,所得遮光元件之光學參數相同。 After the coating is completed, another substrate to be coated is placed in the vacuum chamber, and the coating process is repeated, and the optical parameters of the obtained shading elements are the same.

如圖9及圖10a-10b所示,遮光元件之膜層20從靠近基材10表面之一側到遠離基材10表面之一側是氧化或氮化越來越不完全之膜層20,最靠近基材10表面之膜層20為氧化或氯化完全之金屬鈀材,作為遮光元件之吸光層;最遠離基材10表面之膜層20為氧化或氯化最不完全之金屬鈀材,作為遮光元件之阻光層;漸變膜層內阻光層之比例越高,使得光穿透率下降,但光反射率之提升;漸變膜層內吸光層之比例越高,使得光反射率下降,但光穿透率之提升;通過調整吸光層與阻光層之間之比例,達到使用者所要求之遮光元件之遮光效果。 As shown in FIG. 9 and FIGS. 10a-10b, the film layer 20 of the light-shielding member is a film layer 20 which is less and more incompletely oxidized or nitrided from the side close to the surface of the substrate 10 to the side away from the surface of the substrate 10. The film layer 20 closest to the surface of the substrate 10 is an oxidized or chlorinated metal palladium material as a light absorbing layer of the light shielding member; the film layer 20 farthest from the surface of the substrate 10 is the most incomplete metal pentoxide material which is oxidized or chlorinated. As the light blocking layer of the shading element; the higher the proportion of the light blocking layer in the grading film layer, the lower the light transmittance, but the higher the light reflectance; the higher the proportion of the light absorbing layer in the grading film layer, the light reflectance Decrease, but the light transmittance is improved; by adjusting the ratio between the light absorbing layer and the light blocking layer, the shading effect of the shading element required by the user is achieved.

如圖9所示,採用上述實施方式一、二、三及四提供之方法製成之遮光元件包括:一基材10及一膜層20,所述膜層20為金屬鈀材單質及金屬鈀材反應物之混合體,從靠近基材10一側到遠離基材10一側,所述膜層20中金屬鈀材單質之沉積濃度逐漸增加,而金屬鈀材反應物之沉積濃度逐漸減小。所述金屬鈀材單質具有反射光線之作用,所述金屬鈀材反應物具有吸收光線之作用。所述金屬鈀材材料為鉻或鈦,使用者可以根據遮光元件所要求之光學效果控制膜層20之厚度,所述金屬鈀材反應物為金屬鈀材單質之氧化物或氮化物。在本實施方式中,所述金屬鈀材反應物為氧化鈦或氮化鈦,氧化鉻或氮化鉻其中之一種。 As shown in FIG. 9, the shading element prepared by the method provided in the first embodiment, the second, the third and the fourth embodiment comprises: a substrate 10 and a film layer 20, wherein the film layer 20 is a metal palladium material and a metal palladium. The mixture of material reactants, from the side close to the substrate 10 to the side away from the substrate 10, the deposition concentration of the metal palladium element in the film layer 20 is gradually increased, and the deposition concentration of the metal palladium reactant is gradually decreased. . The metal palladium material has a function of reflecting light, and the metal palladium reactant has a function of absorbing light. The metal palladium material is chromium or titanium, and the user can control the thickness of the film layer 20 according to the optical effect required by the light shielding element, which is an oxide or nitride of a metal palladium element. In this embodiment, the metal palladium reactant is one of titanium oxide or titanium nitride, chromium oxide or chromium nitride.

本發明通過不斷調整鍍膜機之電子束之功率和通入真空腔內之氣體之量,而無需改變金屬鈀材之材料,就可得到不同遮光效果之遮光元件。 The invention can obtain the shading elements with different shading effects by continuously adjusting the power of the electron beam of the coating machine and the amount of gas flowing into the vacuum chamber without changing the material of the metal palladium material.

綜上所述,本發明確已符合發明專利之要件,遂依法提出專利申請。惟,以上所述者僅為本發明之較佳實施方式,自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝之人士援依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。 In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.

10‧‧‧基材 10‧‧‧Substrate

20‧‧‧膜層 20‧‧‧ film layer

Claims (11)

一種遮光元件之鍍膜方法,其包括以下步驟:提供一鍍膜機、一金屬鈀材、一試驗基材及一待鍍膜基材;將金屬鈀材及試驗基材放入鍍膜機之真空腔後,調整鍍膜機之電子束之功率及鍍膜機氣體源之氣體釋放量,使電子束轟擊產生之金屬鈀材離子與所釋放之氣體完全反應;取出試驗基材,並將待鍍膜基材放入真空腔,通過調整電子束之功率或氣體源之氣體釋放量之一,並最終使電子束之功率和氣體源之氣體釋放量保持在一定值,在所述待鍍膜基材上形成一層膜層,且從靠近待鍍膜基材一側到遠離待鍍膜基材一側,所述膜層中金屬鈀材單質之沉積濃度逐漸增加,而金屬鈀材反應物之沉積濃度逐漸減小;當膜層之電阻值保持不變後,鍍膜完成。 A coating method for a light shielding component, comprising the steps of: providing a coating machine, a metal palladium material, a test substrate and a substrate to be coated; and placing the metal palladium material and the test substrate into a vacuum chamber of the coating machine, Adjusting the power of the electron beam of the coating machine and the gas release amount of the gas source of the coating machine, so that the metal palladium ions generated by the electron beam bombardment completely react with the released gas; the test substrate is taken out, and the substrate to be coated is placed in a vacuum a cavity, by adjusting one of the power of the electron beam or the gas release amount of the gas source, and finally maintaining the power of the electron beam and the gas release amount of the gas source at a certain value, forming a film layer on the substrate to be coated, And from the side close to the substrate to be coated to the side away from the substrate to be coated, the deposition concentration of the metal palladium element in the film layer is gradually increased, and the deposition concentration of the metal palladium reactant is gradually decreased; After the resistance value remains unchanged, the coating is completed. 如申請專利範圍第1項所述之遮光元件之鍍膜方法,其中:在對試驗基材進行鍍膜過程中,當設定之氣體源之氣體每秒之釋放量小於每秒蒸發之金屬鈀材離子完全反應所需要之氣體量時,逐漸調整氣體源之氣體釋放量至使金屬鈀材離子完全反應之一臨界釋放量。 The method for coating a light-shielding member according to claim 1, wherein: in the coating process on the test substrate, when the gas of the set gas source is released per second, the amount of metal palladium ions evaporated per second is completely When the amount of gas required for the reaction is adjusted, the gas release amount of the gas source is gradually adjusted to a critical release amount of the metal palladium ion completely reacted. 如申請專利範圍第1項所述之遮光元件之鍍膜方法,其中:在對試驗基材進行鍍膜過程中當設定之氣體源之氣體每秒之釋放量大於每秒蒸發之金屬鈀材離子完全反應所需要之氣體量時,逐漸調整電子束功率至使所釋放之氣體能完全反應之一第二功率。 The method for coating a light-shielding member according to claim 1, wherein: when the test substrate is coated, the gas of the set gas source is released per second more than the metal palladium ion per second evaporated. When the amount of gas is required, the electron beam power is gradually adjusted to allow the released gas to completely react to a second power. 如申請專利範圍第2項或第3項所述之遮光元件之鍍膜方法,其中:在對待鍍膜基材鍍膜過程中,使氣體源以預設釋放量釋放氣體,且所述預設釋放量等於臨界釋放量,提高電子束功率至一第三功率,且第三功率大 於第二功率,使金屬鈀材離子每秒之蒸發量大於氣體源每秒釋放之氣體完全反應所需要之量,通過設定不同之第三功率得到不同遮光效果之遮光元件。 The method for coating a light-shielding member according to the second or third aspect of the invention, wherein: in the process of coating the substrate to be coated, the gas source is released with a predetermined release amount, and the predetermined release amount is equal to The critical release amount increases the electron beam power to a third power, and the third power is large At the second power, the amount of evaporation of the metal palladium ions per second is greater than the amount required for the complete reaction of the gas released by the gas source per second, and the shading elements having different shading effects are obtained by setting different third powers. 如申請專利範圍第2項或第3項所述之遮光元件之鍍膜方法,其中:在對待鍍膜基材鍍膜過程中,使電子束以第三功率轟擊鈀材,且所述第三功率等於第二功率,降低氣體源之氣體釋放量到一預設釋放量,且所述預設釋放量小於臨界釋放量,使金屬鈀材離子每秒之蒸發量大於氣體源每秒釋放之氣體完全反應所需要之量,通過設定不同之預設釋放量得到不同遮光效果之遮光元件。 The method for coating a light-shielding member according to the second or third aspect of the invention, wherein: in the coating process of the substrate to be coated, the electron beam is caused to bombard the palladium material with a third power, and the third power is equal to The second power reduces the gas release amount of the gas source to a predetermined release amount, and the predetermined release amount is less than the critical release amount, so that the evaporation amount of the metal palladium ion per second is greater than the gas reaction of the gas source released per second. The amount required, the shading elements with different shading effects are obtained by setting different preset release amounts. 如申請專利範圍第1項所述之遮光元件之鍍膜方法,其中:所述金屬鈀材為鉻或鈦。 The method for coating a light-shielding member according to claim 1, wherein the metal palladium material is chromium or titanium. 如申請專利範圍第1項所述之遮光元件之鍍膜方法,其中:所述氣體源釋放出之氣體為氧氣或氮氣。 The method for coating a light-shielding member according to claim 1, wherein the gas released by the gas source is oxygen or nitrogen. 一種遮光元件,其包括一待鍍膜基材及一膜層,其改進在於:所述膜層為金屬鈀材及金屬鈀材反應物之混合體,從靠近待鍍膜基材一側到遠離待鍍膜基材一側,所述膜層中金屬鈀材單質之沉積濃度逐漸增加,而金屬鈀材反應物之沉積濃度逐漸減小,所述金屬鈀材單質具有反射光線之作用,所述金屬鈀材反應物具有吸收光線之作用。 A light shielding member comprising a substrate to be coated and a film layer, wherein the film layer is a mixture of a metal palladium material and a metal palladium material reactant, from a side near the substrate to be coated to a distance away from the film to be coated On one side of the substrate, the deposition concentration of the metal palladium material in the film layer is gradually increased, and the deposition concentration of the metal palladium material is gradually decreased, and the metal palladium material has a function of reflecting light, the metal palladium material The reactants have the effect of absorbing light. 如申請專利範圍第8項所述之遮光元件,其中:所述金屬鈀材為鈦或鉻。 The shading element of claim 8, wherein the metal palladium material is titanium or chromium. 如申請專利範圍第8項所述之遮光元件,其中:所述膜層根據光學要求厚度不一樣。 The shading element of claim 8, wherein the film layer has a different thickness depending on optical requirements. 如申請專利範圍第8項所述之遮光元件,其中:所述金屬鈀材反應物為單質材料之氧化物或氮化物。 The shading element of claim 8, wherein the metal palladium reactant is an oxide or nitride of a simple material.
TW97140833A 2008-10-24 2008-10-24 Coating method and shading element using the method TWI472636B (en)

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JPH07191345A (en) * 1993-12-25 1995-07-28 Victor Co Of Japan Ltd Manufacture of spatial optical modulating element
TW593725B (en) * 2002-04-30 2004-06-21 Prodisc Technology Inc Coating device and method

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JPH07191345A (en) * 1993-12-25 1995-07-28 Victor Co Of Japan Ltd Manufacture of spatial optical modulating element
TW593725B (en) * 2002-04-30 2004-06-21 Prodisc Technology Inc Coating device and method

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