TWI470109B - Method of treating a gas stream - Google Patents

Description

Method of treating airflow

The present invention relates to a method and apparatus for treating a gas stream, and the invention is particularly useful for treating a gas stream exiting a processing chamber, wherein a pulsed gas delivery system is used to supply gas to the processing chamber.

Pulsed gas delivery systems are commonly used to form multilayer films on a batch of substrates located in a processing chamber. One technique for forming a thin film on a substrate is atomic layer deposition (ALD), in which a gaseous reactant or "precursor" is sequentially transferred to a processing chamber to form a very thin layer of material on the substrate (usually atomic layer scale). .

By way of example, a high dielectric constant capacitor can be formed on a germanium wafer by sequential deposition of a hafnium oxide (HfO ₂ ) and aluminum oxide (Al ₂ O ₃ ) film using ALD techniques. The HfO ₂ film can be formed by sequentially supplying a ruthenium precursor such as ruthenium (ethylmethylamino) ruthenium (TEMAH) and an oxidant such as ozone (O ₃ ) to the processing chamber, and Al ₂ O _{The 3} film can be formed by sequentially supplying an aluminum precursor such as trimethylaluminum (TMA) and O ₃ to the chamber.

In summary, the first precursor delivered to the processing chamber is adsorbed onto the surface of the substrate within the processing chamber. The unadsorbed first precursor is withdrawn from the processing chamber by a vacuum pumping system, and then the second precursor is transferred to the processing chamber to react with the first precursor to form a layer of deposited material. In the deposition chamber, direct conditions with respect to the substrate are optimized to minimize gas phase reactions and maximize surface reactions to form a continuous film on each substrate. Any unreacted second precursor and any by-products resulting from the reaction between the precursors are then removed from the processing chamber by a pumping system. Depending on the structure formed within the processing chamber, the first precursor or third precursor is then transferred to the processing chamber.

Typically (e.g.) by passing a purge gas (such as, N ₂ or Ar) between the transfer chamber of each precursor to be performed in a purge step between the transfer of each precursor. The purpose of purge gas delivery is to remove any residual precursor from the processing chamber to prevent improper reaction with a precursor supplied to the chamber.

In practice, only about 5% or less of the precursor supplied to the processing chamber is consumed during the deposition process, and therefore, the gas extracted from the chamber during the processing chamber will be supplying purge gas to the chamber. The first precursor is alternately enriched and then enriched in a second precursor.

In conventional vacuum pumping systems, the gas extracted from the processing chamber enters a common foreline that is directed to the vacuum pump. In the event that the unreacted precursors meet within the vacuum pumping system, a cross-reaction of the precursor can occur and this can result in the deposition of solid material within the foreline and the accumulation of powder in the vacuum pump. The particulates and powder accumulated in the pump can effectively fill the empty running gap between the rotor and stator components of the pump, resulting in loss of pumping efficiency and ultimately convulsion failure. Periodic pump cleaning or replacement is then required to maintain pumping efficiency, resulting in higher processing downtime and increased manufacturing costs.

At least the preferred embodiment of the present invention aims to solve this problem.

The present invention provides a method of treating a gas stream discharged from a processing chamber, wherein a first gas precursor and a second gas precursor are alternately supplied into the processing chamber, the method comprising the steps of: being used in the chamber Upstream of the vacuum pump that draws the gas stream, the gas stream is delivered to a gas mixing chamber; a second gas precursor is supplied to the gas mixing chamber to react with the first gas precursor in the gas stream to form a solid material; and then the gas stream is delivered To a separator to separate the solid material from the gas stream.

By deliberately reacting the unconsumed first gas precursor to form a solid material (eg, particulates and/or dust) prior to reaching the pump without consuming the first gas precursor, the first gas precursor is not consumed in the pump and subsequently The reaction of the second gas precursor that is drawn from the chamber by the pump can be suppressed. The separator is for separating a solid material produced by a reaction between the first gas precursor and the second gas precursor that is supplied to the gas mixing chamber from the gas stream.

The separator can be provided by any intercepting device for removing solid material from a gas stream. One example is a dead-leg type intercepting device. In a preferred embodiment, the separator is provided by a cyclone. One advantage associated with the use of a cyclone to separate solid materials from a gas stream is that the solid material will precipitate out at the bottom of the cyclone without increasing the barrier to airflow by the separator. Two or more cyclones may be provided in parallel to increase gas conduction.

For relatively low pressures, efficiency is improved by utilizing an electrostatic separator, and thus, in another preferred embodiment, the separator is provided by an electrostatic precipitator. In one example, the separator includes a housing containing: a charging member for imparting a charge to the solid material as it passes through the housing; and a collection member downstream of the charging member for collecting the charged particles. The charging member preferably includes at least one charging electrode located within the charging chamber of the housing, and the collection member includes at least one collection surface located in the collection chamber of the housing. The or each collection surface can be electrically grounded or at one of the potentials opposite the potential of the or each charging electrode. The or each collection surface can be aligned to be substantially parallel to the flow direction of the gas flow through the collection chamber.

The reaction between the first gas precursor and the second gas precursor will take a finite amount of time, and thus the gas mixing chamber is preferably configured to define the twists and turns of the mixture of the second gas precursor and the gas stream The path increases the residence time of the gas mixture within the gas mixing chamber and optimizes mixing. At least one of the gas mixing chamber and the second gas precursor may be heated to increase the rate of reaction between the gas precursors. The separator can also be heated to complete the reaction between the gas precursors. In a preferred embodiment, the gas mixing chamber is integral with the separator.

The number of gas supplies can be minimized by supplying a second precursor to the processing chamber as needed to process within the chamber and supply a second precursor to the gas mixing chamber to react with the first gas precursor. The second gas precursor can be an oxidant or a reducing agent used in the processing carried out in the processing chamber. In a preferred embodiment, the second gas precursor is an oxidant, such as ozone, and the first gas precursor is an organometallic precursor, which may comprise one of bismuth and aluminum. Examples include hydrazine (ethylmethylamino) hydrazine (TEMAH) and trimethylaluminum (TMA).

The present invention also provides an apparatus for treating a gas stream discharged from a processing chamber, wherein a first gas precursor and a second gas precursor are alternately supplied to the processing chamber from respective sources, the apparatus including a gas stream received from the processing chamber a gas mixing chamber for supplying a second gas precursor from the second gas precursor source to the mixing chamber to react with the first gas precursor in the gas stream to form a solid material member, and a gas mixing chamber The chamber receives the gas stream and a separator that separates the solid material from the gas stream.

The present invention further provides an atomic layer deposition apparatus comprising a processing chamber, a first gas precursor supply for supplying a first gas precursor to the chamber, and a supply of a second gas precursor to the chamber a second gas precursor supply, a vacuum pump for extracting gas flow from the processing chamber, and a receiving gas flow from the processing chamber and the vacuum pump for receiving from the processing chamber and receiving from the second precursor gas supply The second gas precursor is a gas mixing chamber that reacts with the first gas precursor in the gas stream to form a solid material and a separator for receiving gas from the gas mixing chamber and separating the solid material from the gas stream.

The present invention also provides an apparatus for treating an exhaust stream from a processing chamber, the apparatus comprising a gas mixing chamber for receiving a gas stream from the processing chamber, and one for supplying a reactant to the mixing chamber to one of the gas streams The component reacts to form a reactant supply of the solid material, and an electrostatic separator for receiving the gas stream from the gas mixing chamber and separating the solid material from the gas stream.

The features described above in relation to the method aspect of the invention are equally applicable to the device aspect, and vice versa.

Referring first to Figure 1, an atomic layer deposition (ALD) apparatus includes a processing chamber 10 for receiving a batch of substrates to be processed simultaneously within the processing chamber 10. The processing chamber 10 independently and alternately receives two or more different gaseous reactants or precursors for forming a layer of material on the exposed surface of the substrate. In the example illustrated in FIG. 1, a first precursor source or supply 12 is coupled to the processing chamber 10 by a first precursor supply line 14 to supply a first precursor to the processing chamber 10, and a second precursor source or The supply 16 is connected to the processing chamber 10 by a second precursor supply line 18 to supply a second precursor to the processing chamber 10. The purge gas source or supply 20 is also coupled to the process chamber 10 by a purge gas supply line 22 to supply purge gas, such as nitrogen or argon, to the process chamber 10 between the supply precursor and the process chamber 10.

The supply of the precursor and purge gas to the processing chamber 10 is controlled by the opening and closing of the gas supply valves 24, 26, 28 located in the supply lines 14, 18, 22, respectively. The operation of the gas supply valve is controlled by a supply valve controller 30 that sends a control signal 32 to the gas supply valve to open and close the valve in accordance with a predetermined sequence of gas delivery. A typical gas transfer sequence involving two gas precursors and a purge gas is illustrated in FIG. The first trace 40 represents the hierarchical transfer sequence of the first gas precursor, and the second trace 42 represents the hierarchical transfer sequence of the second gas precursor. As described above, the first precursor and the second precursor are alternately supplied to the chamber to form a layer of solid material on the batch of substrates located within the processing chamber 10. The duration of each pulse transfer from the precursor to the processing chamber 10 is defined for a particular process performed within the processing chamber 10; in this example, the duration of each pulse transfer from the second precursor to the processing chamber 10 The duration of each pulse transfer from the first precursor to the processing chamber 10 is longer. The third trace 44 represents a hierarchical transfer sequence of purge gas introduced into the processing chamber 10 between the transfer of the first gas precursor and the second gas precursor to flush the processing chamber 10 prior to introduction of the next gaseous precursor. .

Referring again to FIG. 1, a vacuum pumping system is coupled to the outlet 50 of the processing chamber 10 to extract airflow from the processing chamber 10. The pumping system includes a vacuum pump 52 for receiving airflow through its inlet 54 and discharging the airflow at high pressure through its exhaust port 56. The gas stream exiting vacuum pump 52 is delivered to an inlet 58 of a removal device 60 (e.g., a heat treatment unit or a wet scrubber) to remove one or more species from the gas stream prior to discharge of the gas stream to the atmosphere.

In one example, the first gas precursor system comprises an organometallic precursor of one of cerium and aluminum, such as cerium (ethylmethylamino) hydrazine (TEMAH) or trimethyl aluminum (TMA), and the second gas The precursor is an oxidant such as ozone. Thus, the second precursor supply 16 can be provided by an ozone generator. Currently available ozone generators may be difficult to start and stop in synchronization with the pulse delivery sequence of ozone to the processing chamber 10. In view of this, the ozone generator 16 can continuously generate ozone during the ALD process, and when ozone is not transferred to the processing chamber 10, the ozone can be branched along the ozone supply line 62 to a position downstream of the vacuum pump 52, for example, to the vacuum pump 52. The inlet of a pre-pump (not illustrated) provided between the removal device 60 or directly to the second inlet of the elimination device 60, wherein ozone can assist in the elimination of the gas stream exiting the vacuum pump 52.

In view of the fact that the first gas precursor and the second gas precursor are alternately supplied to the processing chamber 10, the gas stream drawn from the processing chamber 10 will be enriched in the first precursor gas stream (which includes the unconsumed first precursor and the The by-product produced by the reaction between the precursors is alternated with the second precursor-rich gas stream (which contains the second precursor and by-product that is not consumed), wherein the extraction from the processing chamber 10 is enriched A gas stream rich in purge gas between the gases of the precursor. Each of the precursor-rich gas streams may also contain traces of purge gas and other contaminants.

In order to inhibit mixing of the unconsumed precursors in the vacuum pump 52 (which may result in improper reaction between the precursors and formation of dust and/or powder in the vacuum pump), the inlet 50 of the processing chamber 10 and the inlet of the vacuum pump 52 Means are provided between 54 to process the gas stream exiting the processing chamber 10 to reduce the amount of one of the first precursor and the second precursor entering the vacuum pump 52. In the example illustrated in Figure 1, the amount of the first precursor entering the vacuum pump 52 is reduced.

The apparatus for processing the gas stream exiting the processing chamber 10 includes a gas mixing chamber 70 having a first inlet 72 for receiving a gas stream exiting the processing chamber 10 and a second inlet 74 for receiving a reaction The reaction is reacted with a selected precursor that will be at least partially removed from the gas stream. In the illustrated example, the reactant supply for supplying reactants to the gas mixing chamber 70 is conventionally supplied by an ozone generator 16, wherein the reactant supply line 76 is coupled to the ozone supply line 62 and the gas mixing chamber 70. A second gas precursor (in this example, ozone) is supplied between the second inlets 74 to the gas mixing chamber 70 as a reactant. The supply of reactants to the gas mixing chamber 70 is controlled by the opening and closing of the reactant supply valve 78 located in the reactant supply line 76. The operation of the reactant supply valve 78 is controlled by a supply valve controller 30 that issues a control signal 32 to the reactant supply valve 76 for opening and closing in synchronization with the transfer of the first gas precursor to the processing chamber 10. The reactants are supplied to the gas mixing chamber 70 in a graded transfer sequence similar to the graded transfer sequence of the first gas precursor. The amount of reactants periodically delivered to the gas mixing chamber 70 is preferably at least sufficient to react with the amount of the first gaseous precursor supplied to the processing chamber 10.

In order to increase the rate of reaction between the reactants and the first gas precursor in the gas mixing chamber 70, at least one of the reactants and the gas mixing chamber 70 may be heated. Referring to FIG. 1, first heater 80 may optionally surround reactant supply line 76 to extend the reactants prior to supply of reactants to gas mixing chamber 70, and second heater 82 may optionally surround gas mixing chamber 70 to extend The gas mixing chamber 70 is heated.

The reactants are preferably selected to replicate the reaction occurring between the unconsumed first gas precursor and the second gas precursor within vacuum pump 52. Thus, the product resulting from the reaction between the reactants and the first gas precursor is a solid material (such as dust and/or powder) that would otherwise be formed in the vacuum pump 52 via the reaction between the unconsumed reactants. Accordingly, the apparatus for processing the gas stream exiting the processing chamber 10 includes a separator 84 having an inlet 86 coupled to an outlet 88 of the gas mixing chamber 70.

In one embodiment, the separator is a cyclone that receives a gas stream containing solid material from gas mixing chamber 70 and separates the solid material from the gas stream in a manner known in the art to leave the solid material in it. The gas stream is exhausted from its outlet 90 to the inlet 54 of the vacuum pump 52. As illustrated in FIG. 1, a third heater 92 may optionally be provided around the separator 84 for heating the separator 84 to promote any reaction between the remaining unconsumed first gas precursor and the reactants. In another embodiment, the separator is an electrostatic separator that similarly receives a gas stream containing solid material from gas mixing chamber 70 and separates the solid material from the gas stream in a manner known in the art to thereby solid material The gas stream is retained therein and exits from its outlet 90 to the inlet 54 of the vacuum pump 52.

In the example illustrated in Figure 1, the gas mixing chamber 70 is separate from the separator 84. However, the gas mixing chamber 70 can be mounted to or integral with the separator 84. An example of an intercepting apparatus 100 including a gas mixing chamber 102 mounted on a cyclone 104 is illustrated in FIGS. 3 and 4. The intercepting device 100 includes a first inlet 106 for receiving a gas stream drawn from the processing chamber 10 by a vacuum pump 52, and for receiving a gaseous reactant (eg, a second gas precursor) to be selected and not consumed in the gas stream. The precursor (in this example, the first gas precursor) reacts with a second inlet 108. As illustrated in FIG. 1, a heater (not shown) can be positioned around the intercepting device 100 to heat at least one of the gas mixing chamber 102 and the cyclonic separator 104.

The gas stream and gaseous reactants enter the gas mixing chamber 102 where they are combined. The baffle 110 located within the gas mixing chamber 102 causes the combined gas stream to flip 180[deg.] as it passes through the gas mixing chamber 102 and thereby define a combined gas flow through one of the gas mixing chambers 102 to circumvent the flow path 112. The disturbance generated by the baffle 110 in the combined gas stream is used to increase the residence time of the combined gas stream within the gas mixing chamber 102, and optimizes the mixing of the gaseous reactant with the unconsumed gas precursor to promote reactants and unconsumed The reaction between the precursors forms a solid material such as microparticles and/or powder.

The gas stream containing the solid material now passes through the outlet 114 of the gas mixing chamber 102 and through the cyclone separator 104 through the inlet 116 of the cyclone. The cyclone separator 104 includes at least one separation chamber 118 to receive a gas stream containing solid material from the inlet 116. In a preferred embodiment, cyclone separator 104 includes at least six separation chambers 118 located circumferentially within cyclone separator 104, each for receiving a portion of the gas stream containing solid material from inlet 116.

Each of the separation chambers 118 includes a cylindrical upper portion 120 and a conical lower portion 122. A removable annular particle collection chamber 124 is located below the separation chamber 118 to receive solid material in the form of particulates, powders, and/or dust separated from the solids-containing gas stream within the separation chamber 118. As is well known in the art of cyclones, the solids-containing gas stream entering the separation chamber 118 spirals downwardly along the inner wall surface of the separation chamber 118. In the lower portion of the separation chamber 118, the gas flow is turned upside down to form a spiral that flows upwardly along the center of the separation chamber 118. During this process, the solid material in the gas stream separates from the gas under the influence of the centrifugal force of the spiral gas stream and falls along the inner wall surface of the separation chamber 118 to be collected in the particle collection chamber 124.

The outlet tube 126 extends downwardly into the cylindrical upper portion 120 of the separation chamber 118 to receive gas flow from the separation chamber 118 and deliver gas flow into the annular inflation chamber 128. The plenum chamber 128 receives gas from each of the separation chambers 118 and vents the gas to the central outlet tube 130, which flows through the central outlet tube 130 to the outlet 132 of the intercepting device 100.

An inductor (not shown) may be provided in association with the particle collection chamber 124. The sensor 34 can be in the form of a content sensor whose output represents a signal indicative of the amount of solid material collected in the particle collection chamber 124. Alternatively, the sensor can be in the form of a dynamometer (which is used to monitor the weight of solid material collected by the particle collection chamber 124), a temperature sensor, a vibration sensor, or any other suitable sensor. In use, the sensor output signals a signal indicative of the amount of solid material collected by the intercepting device 100 to the controller. When the monitored amount reaches or exceeds a predetermined value, the controller can generate a visual or audible warning to the user indicating that maintenance of the device 100 needs to be intercepted. The connection of the particle collection chamber 124 to the capture device 100 can be disconnected by the user. Alternatively, the particle collection chamber 124 can be provided with an access port that is selectively closed by a door or other movable component to provide external access to particles collected by the capture device 100. For example, the bottom wall of the particle collection chamber 124 can be pivoted to the chamber sidewall such that when the capture device 100 requires maintenance, the particle collection chamber 124 can be opened to allow the collected particles to pass from the particle collection chamber 124 Fall into the appropriate container placed underneath it. Alternatively, by providing a closable access raft or trough at a location above the level of particulate content that produces the warning, and inserting a suction device through the access raft into the particle collection chamber 124 for removal therefrom Particles improve safety.

Another example of an intercepting device 200 including a gas mixing chamber 202 mounted on an electrostatic separator 204 is illustrated in FIG. Similar to the capture device 100, the capture device 200 includes a first inlet 206 for receiving a gas stream drawn from the processing chamber 10 by a vacuum pump 52, and for receiving a gaseous reactant (eg, a second gas precursor) to A second inlet 208 containing the selected unconsumed precursor (in this example, the first gas precursor) is reacted. A heater (not shown) can be positioned around the intercepting device 200 to heat the gas mixing chamber 202.

The gas stream and gaseous reactants enter the gas mixing chamber 202 where they are combined. A baffle 210 located within the gas mixing chamber 202 causes the combined gas stream to flip 180[deg.] as it passes through the gas mixing chamber 202 and thereby define a combined flow of gas through one of the gas mixing chambers 202 to circumvent the flow path. The disturbance generated by the baffle 210 in the combined gas stream is used to increase the residence time of the combined gas stream within the gas mixing chamber 202, and optimizes the mixing of the gaseous reactant with the unconsumed gas precursor to promote reactants and The reaction between the precursors is consumed to form a solid material such as microparticles and/or powder.

The gas stream containing the solid material now passes through the transfer port 214 that connects the gas mixing chamber 202 to the electrostatic separator 204. The electrostatic separator 204 includes a housing 216 that includes a charging chamber 218 in which solid material entrained in the gas stream is charged, and a collection chamber 220 located downstream of the charging chamber 218. And charging the solid material from the gas stream in the collection chamber 220. The charging chamber 218 houses at least one charging electrode 222 that is charged to a positive or negative potential. The collection chamber 220 houses at least one collection surface 224 that may be provided by a series of plates located in the collection chamber 220. As illustrated, the collection surface 224 can be located on one side of the collection chamber 220, or otherwise such that the collection surface 224 is aligned substantially parallel to the flow of airflow through the collection chamber 220. The collection surface 224 can be held at electrical ground or at a potential opposite the potential of the charge electrode 222.

In use, as the airflow passes through the outer casing 216, the charging electrode 222 imparts a charge to the solid material entrained within the airflow as it passes through the charging chamber 218. The charged solid material is attracted to the collection surface 224 as it passes through the collection chamber 220 such that the charged solid material is retained by the collection surface 224 and thus separated from the gas stream. Airflow exits the outer casing 216 through the outlet 226.

Referring again to Figure 1, two or more splitters 84, or two or more intercepting devices 100, may be provided in parallel to enable one of the cyclones or intercepting devices to be serviced while the other is operational .

In summary, a method of treating a gas stream exiting an atomic layer deposition (ALD) processing chamber is described in which two or more gas precursors are alternately supplied to an atomic layer deposition (ALD) processing chamber. Between the processing chamber and a vacuum pump for extracting gas flow from the chamber, the gas stream is delivered to the gas mixing chamber, and a reactant is supplied to the gas mixing chamber to react with one of the gas precursors to form a solid material. The gas stream is then passed to a cyclone or electrostatic separator to separate the solid material from the gas stream. By deliberately reacting the unreacted precursor to form a solid material upstream of the pump, the reaction of the unreacted precursor in the pump with the second unreacted precursor subsequently withdrawn from the chamber can be inhibited.

10. . . Processing chamber

12. . . First precursor source or supply

14. . . First precursor supply line

16. . . Second precursor source or supply

18. . . Second precursor supply line

20. . . Purified gas source or supply

twenty two. . . Purified gas supply line

twenty four. . . Gas supply valve

26. . . Gas supply valve

28. . . Gas supply valve

30. . . Supply valve controller

32. . . control signal

40. . . First trace

42. . . Second trace

44. . . Third trace

50. . . Export

52. . . Vacuum pump

54. . . Entrance

56. . . exhaust vent

58. . . Entrance

60. . . Elimination device

62. . . Ozone supply pipeline

70. . . Gas mixing chamber

72. . . First entrance

74. . . Second entrance

76. . . Reactant supply line

78. . . Reactant supply valve

80. . . First heater

82. . . Second heater

84. . . Splitter

86. . . Entrance

88. . . Export

90. . . Export

92. . . Third heater

100. . . Intercepting equipment

102. . . Gas mixing chamber

104. . . Cyclone separator

106. . . First entrance

108. . . Second entrance

110. . . Baffle

112. . . Winding flow path

114. . . Export

116. . . Entrance

118. . . Separation chamber

120. . . Cylindrical upper part

122. . . Conical lower part

124. . . Removable annular particle collection chamber

128. . . Inflated chamber

130. . . Central outlet pipe

132. . . Export

200. . . Intercepting equipment

202. . . Gas mixing chamber

204. . . Electrostatic separator

206. . . First entrance

208. . . Second entrance

210. . . Baffle

214. . . Transmission

216. . . shell

218. . . Charging chamber

220. . . Collection chamber

222. . . Charging electrode

224. . . Collecting surface

226. . . Export

Figure 1 schematically illustrates an atomic layer deposition apparatus; Figure 2 illustrates a sequence of supply of gas to the processing chamber of the apparatus of Figure 1; Figure 3 illustrates an external view of an intercepting apparatus including a gas mixing chamber and separator; and Figure 4 illustrates A cross-sectional view of one example of the intercepting device of FIG. 3; and FIG. 5 illustrates a cross-sectional view of another example of the intercepting device of FIG.

10. . . Processing chamber

12. . . First precursor source or supply

14. . . First precursor supply line

16. . . Second precursor source or supply

18. . . Second precursor supply line

20. . . Purified gas source or supply

twenty two. . . Purified gas supply line

twenty four. . . Gas supply valve

26. . . Gas supply valve

28. . . Gas supply valve

30. . . Supply valve controller

32. . . control signal

50. . . Export

52. . . Vacuum pump

54. . . Entrance

56. . . exhaust vent

58. . . Entrance

60. . . Elimination device

62. . . Ozone supply pipeline

70. . . Gas mixing chamber

72. . . First entrance

74. . . Second entrance

76. . . Reactant supply line

78. . . Reactant supply valve

80. . . First heater

82. . . Second heater

84. . . Splitter

86. . . Entrance

88. . . Export

90. . . Export

92. . . Third heater

Claims (37)

A method of treating a gas stream discharged from a processing chamber, wherein a first gas precursor and a second gas precursor are alternately supplied to the processing chamber, the method comprising the steps of: The chamber extracts one of the gas streams upstream of the vacuum pump, and delivers the gas stream to a gas mixing chamber; supplying the second gas precursor to the gas mixing chamber to react with the first gas precursor in the gas stream to form a solid material And thereafter delivering the gas stream to a separator to separate solid material from the gas stream; wherein the second gas precursor is heated prior to being supplied to the gas mixing chamber to promote between the gas precursors upstream of the pump a reaction; wherein the gas mixing chamber is integral with the separator. The method of claim 1, wherein at least one of the gas mixing chamber and the separator is heated to promote a reaction between the gas precursors upstream of the pump. The method of claim 1, wherein the second gas precursor system is an oxidant. The method of claim 3, wherein the second gas precursor system is ozone. The method of claim 1, wherein the first gas precursor system is an organometallic precursor. The method of claim 5, wherein the organometallic precursor comprises one of bismuth and aluminum. The method of any one of claims 1 to 6, wherein the separator is a cyclone. The method of any one of claims 1 to 6, wherein the separator is an electrostatic Splitter. A device for processing a gas stream discharged from a processing chamber, wherein a first gas precursor and a second gas precursor are alternately supplied to the processing chamber from respective sources, the device comprising: a processing chamber a gas mixing chamber for receiving the gas stream; a member for supplying the second gas precursor from the second gas precursor source to the mixing chamber to react with the first gas precursor in the gas stream to form a solid material And a separator for receiving the gas stream from the gas mixing chamber and separating the solid material from the gas stream; wherein the gas mixing chamber is integral with the separator. The apparatus of claim 9, wherein the gas mixing chamber defines one of the airflows to meander a tortuous path. A device according to claim 9, comprising means for heating the gas mixing chamber to promote a reaction between the gas precursors. A device according to claim 9, comprising means for heating the separator to promote a reaction between the first gas precursor and the second gas precursor. A device according to claim 9, comprising means for heating the second gas precursor between the second gas precursor source and the gas mixing chamber. The device of claim 9, wherein the second gas precursor system is an oxidant. The device of claim 9, wherein the second gas precursor system is ozone. The apparatus of any one of clauses 9 to 15, wherein the separator is a cyclone. The device of any one of claims 9 to 15, wherein the separator is an electrostatic separator. The device of claim 17, wherein the separator comprises a casing comprising: a charging member for imparting a charge to the solid material when the gas stream passes through the casing; and a collecting member located downstream of the charging member, It is used to collect the charged particles. The device of claim 18, wherein the charging member comprises at least one charging electrode located in a charging chamber of the housing, and the collecting member comprises at least one collection surface located in a collection chamber of the housing. The device of claim 19, wherein the at least one collection surface is one of electrically grounded or one of potentials opposite the potential of the at least one charging electrode. The device of claim 19, wherein the at least one collection surface is aligned to be substantially parallel to the flow direction of the gas stream through the collection chamber. An atomic layer deposition apparatus comprising: a processing chamber; a first gas precursor supply for supplying a first gas precursor to the chamber; and a second for supplying a second gas precursor to the chamber a gas precursor supply; a vacuum pump for extracting a gas stream from the processing chamber; and a flow between the processing chamber and the vacuum pump for receiving the gas stream from the processing chamber and from the second precursor gas Supplying a gas mixing chamber that receives the second gas precursor to react with the first gas precursor in the gas stream to form a solid material; and a means for receiving the gas stream from the gas mixing chamber and separating solids from the gas stream a separator for material; wherein the gas mixing chamber is integral with the separator. The device of claim 22, wherein the second gas precursor system is an oxidant. The apparatus of claim 22, wherein the second gas precursor system is ozone. The apparatus of claim 22, wherein the first gas precursor system is an organometallic precursor. The device of claim 19, wherein the organometallic precursor comprises one of tantalum and aluminum. The apparatus of claim 22, wherein the gas mixing chamber defines one of the airflows to meander a tortuous path. The apparatus of claim 24, comprising means for heating the gas mixing chamber to promote a reaction between the first gas precursor and the second gas precursor. The apparatus of claim 22, comprising means for heating the separator to promote a reaction between the first gas precursor and the second gas precursor. The apparatus of claim 22, comprising means for heating the second gas precursor between the second gas precursor supply and the gas mixing chamber. The apparatus of any one of claims 22 to 30, wherein the separator is a cyclone. The device of any one of claims 22 to 30, wherein the separator is an electrostatic separator. The device of claim 32, wherein the separator comprises a housing, the housing comprising: for imparting a solid material to the solid material as it passes through the housing a charging member for electric charge; and a collecting member located downstream of the charging member for collecting the charged particles. The device of claim 33, wherein the charging member comprises at least one charging electrode located in a charging chamber of the housing, and the collecting member comprises at least one collection surface located in a collection chamber of the housing. The device of claim 34, wherein the at least one collection surface is in one of electrical ground or a potential opposite the potential of the at least one charging electrode. The device of claim 34, wherein the at least one collection surface is aligned to be substantially parallel to the flow direction of the gas stream through the collection chamber. The apparatus of claim 22, comprising a purge gas supply to supply a purge gas to the chamber between supplying the first gas precursor and supplying the second gas precursor to the chamber.