TWI467054B - Additives for alkaline etching solutions, particular pattern etching solutions, and methods of making the same - Google Patents
Additives for alkaline etching solutions, particular pattern etching solutions, and methods of making the same Download PDFInfo
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- TWI467054B TWI467054B TW100114245A TW100114245A TWI467054B TW I467054 B TWI467054 B TW I467054B TW 100114245 A TW100114245 A TW 100114245A TW 100114245 A TW100114245 A TW 100114245A TW I467054 B TWI467054 B TW I467054B
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- single phase
- phase mixture
- alkali metal
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- hydroxide
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- 238000005530 etching Methods 0.000 title claims description 61
- 238000000034 method Methods 0.000 title claims description 33
- 239000000654 additive Substances 0.000 title claims description 9
- 239000000203 mixture Substances 0.000 claims description 92
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 40
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 40
- 239000000463 material Substances 0.000 claims description 40
- 239000003795 chemical substances by application Substances 0.000 claims description 26
- 150000008044 alkali metal hydroxides Chemical class 0.000 claims description 25
- 229920001223 polyethylene glycol Polymers 0.000 claims description 25
- 238000004519 manufacturing process Methods 0.000 claims description 23
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 21
- 239000002253 acid Substances 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 19
- 239000003513 alkali Substances 0.000 claims description 17
- 230000001590 oxidative effect Effects 0.000 claims description 17
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 16
- 239000002202 Polyethylene glycol Substances 0.000 claims description 14
- 238000002845 discoloration Methods 0.000 claims description 13
- 229910052732 germanium Inorganic materials 0.000 claims description 13
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 13
- 239000007788 liquid Substances 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 230000000996 additive effect Effects 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 8
- UWHCKJMYHZGTIT-UHFFFAOYSA-N tetraethylene glycol Chemical compound OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000000825 pharmaceutical preparation Substances 0.000 claims description 5
- 229940127557 pharmaceutical product Drugs 0.000 claims description 5
- 238000001228 spectrum Methods 0.000 claims description 5
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 2
- 239000000908 ammonium hydroxide Substances 0.000 claims description 2
- 239000000243 solution Substances 0.000 description 17
- 239000013078 crystal Substances 0.000 description 14
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- 239000007864 aqueous solution Substances 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 150000001298 alcohols Chemical class 0.000 description 5
- 238000000354 decomposition reaction Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009472 formulation Methods 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 201000001880 Sexual dysfunction Diseases 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- -1 hydroxide ions Chemical class 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Photovoltaic Devices (AREA)
Description
本發明係關於一種可用作蝕刻液添加劑或蝕刻液之合成成分的產品及其製作方法。The present invention relates to a product useful as an etchant additive or a synthetic component of an etchant and a method of making the same.
按,習知技術在對材料進行蝕刻處理時,業界經常尋求或希望針對不同作業形式、作業地點或作業規模等實際情況可取得相應滿意的蝕刻處理效果。在對半導體材料進行蝕刻處理尤其是這種情況,例如在生產電子元件或太陽能電池時。半導體材料一般情況下均使用矽材料,而單晶矽或多晶矽更是經常用於矽質太陽能電池的生產。According to the prior art, when the material is etched, the industry often seeks or hopes to obtain a satisfactory etching treatment effect for different working conditions, work sites or work scales. This is especially the case when etching semiconductor materials, for example in the production of electronic components or solar cells. Semiconductor materials generally use germanium materials, and single crystal germanium or polycrystalline germanium is often used in the production of tantalum solar cells.
由於大多數蝕刻液對各種晶粒(包括晶體缺陷)均可造成嚴重的蝕刻,所以對結晶材料(尤其是單晶矽或多晶矽)進行特定蝕刻處理是一件繁瑣且成本頗高的事情。這種情況,在例如應用於工業矽片蝕刻(尤其是紋路蝕刻)的鹼金屬氫氧化物系鹼性蝕刻液中尤其明顯。在這裡,雖然尚可選用可對應具體晶粒方向和晶體缺陷特點均勻實施蝕刻處理的另一類蝕刻液,但受到工業領域裡各種安全規定和廢物處理法例的限制,該類蝕刻劑同樣存在諸多可行性問題和成本高昂的情況。鑒於前述原因,業界還是慣於首先採用鹼金屬氫氧化物系鹼性蝕刻液,儘管其中存在蝕刻作用各向異性的問題。Since most etching solutions can cause severe etching of various crystal grains (including crystal defects), it is a cumbersome and costly process to perform specific etching treatment on crystalline materials (especially single crystal germanium or polycrystalline germanium). This case is particularly apparent in, for example, an alkali metal hydroxide alkaline etchant applied to industrial ruthenium etching, especially grain etching. Here, although another type of etching liquid which can uniformly perform etching treatment corresponding to specific grain direction and crystal defect characteristics is selected, it is limited by various safety regulations and waste disposal laws in the industrial field, and such an etchant also has many possibilities. Sexual problems and costly situations. In view of the foregoing reasons, the industry is still accustomed to first adopting an alkali metal hydroxide alkaline etching solution, although there is a problem in that anisotropy of etching action exists.
為從此類鹼性蝕刻液裡取得預定蝕刻處理效果,就必須針對個別半導體材料(例如:矽料)的具體情況來相應調整和匹配各種蝕刻流程。其中對蝕刻持續時間、蝕刻液化學成分及蝕刻溫度等蝕刻處理參數影響很大的因素,主要有半導體材料的結晶形式,例如鑄錠式或穩邊拉拔式多晶矽或單晶矽的混料形式、混料強度、晶體缺陷類型和晶體缺陷密度等。這種情況下就算是出自同一生產商的矽材料,在實際應用時也要必須採用不同的蝕刻處理參數。如使用來自不同生產商的材料,則蝕刻處理參數的差異性就更加大。尤其是在紋路蝕刻處理時,例如用於太陽能電池生產過程中為提高光耦級而進行的表面結構造形,由於紋路蝕刻流程對所用材料的實際情況很靈敏,所以蝕刻處理參數必須作很大的變化。In order to obtain a predetermined etching treatment effect from such an alkaline etching liquid, it is necessary to adjust and match various etching processes for the specific conditions of individual semiconductor materials (for example, tantalum materials). Among them, the etching treatment parameters such as etching duration, etching liquid chemical composition and etching temperature have great influences, mainly in the form of crystals of semiconductor materials, such as ingot type or stabilized side drawing polycrystalline germanium or single crystal germanium. , mixing strength, crystal defect type and crystal defect density. In this case, even if the material is from the same manufacturer, it is necessary to use different etching parameters in practical applications. If materials from different manufacturers are used, the difference in etching process parameters is even greater. Especially in the grain etching process, for example, for the surface structure formation in the solar cell production process for improving the optocoupler stage, since the grain etching process is sensitive to the actual conditions of the materials used, the etching process parameters must be made very large. Variety.
在此背景下,非常有必要對習知蝕刻處理方法,尤其是紋路蝕刻處理方法進行簡化。在已頒DE 10 2008 056 086號德國專利中,揭露了一種可達此目的的蝕刻液添加劑。不過這種添加劑的生產,要求分解各種密度相,因此也難以避免製作繁瑣和費用較高的問題。In this context, it is highly desirable to simplify the conventional etching process, especially the grain etching process. An etchant additive for this purpose is disclosed in German Patent No. DE 10 2008 056 086. However, the production of such an additive requires decomposition of various density phases, and thus it is difficult to avoid cumbersome and expensive problems.
本發明之一目的係提出一種劑品,以達到既可簡化蝕刻處理方法,尤其是簡化紋路蝕刻處理方法,又能達到製作簡便和費用較低的功效。One of the objects of the present invention is to provide a preparation for simplifying the etching treatment method, in particular, simplifying the grain etching treatment method, and achieving the advantages of simple production and low cost.
為達上述目的,本發明提供一種符合申請專利範圍第1項的劑品。In order to achieve the above object, the present invention provides a pharmaceutical product according to the first aspect of the patent application.
本發明之另一目的係為該劑品提出一種製作方法。Another object of the invention is to provide a method of making the formulation.
為達上述另一目的,本發明提供一種符合申請專利範圍第10項的製作方法。In order to achieve the above other object, the present invention provides a production method in accordance with item 10 of the scope of the patent application.
在附屬申請專利範圍中,進一步闡明了本發明的較佳結構方案。The preferred construction of the invention is further clarified in the scope of the appended claims.
申請專利範圍第8項和第9項涉及本發明之劑品的實際使用優點。Items 8 and 9 of the scope of the patent application relate to the practical use advantages of the agent of the present invention.
本發明之劑品的製作過程,係首先將至少一種聚乙二醇與一種鹼料混合成一單一相混合物,然後將該單一相混合物加熱到80℃,最後將該單一相混合物擱置於大氣環境直至變色。上述鹼料,通常是指在水溶液裡可產生氫氧離子的任何化合物及任何元素。鹼料較佳採用鹼金屬氫氧化物或氫氧化銨,當然最好係採用氫氧化鉀或氫氧化鈉。單一相混合物成分(例如:四甘醇或氫氧化鉀)裡的鹼金屬氫氧化物含量為1 wt.%至10 wt.%,其中7 wt.%為首選。The preparation of the present invention is firstly prepared by mixing at least one polyethylene glycol with an alkali material into a single phase mixture, then heating the single phase mixture to 80 ° C, and finally placing the single phase mixture in an atmospheric environment until Discoloration. The above alkali materials generally refer to any compound and any element which can produce hydroxide ions in an aqueous solution. The alkali metal hydroxide or ammonium hydroxide is preferably used as the alkali material, and it is of course preferable to use potassium hydroxide or sodium hydroxide. The alkali metal hydroxide content of the single phase mixture component (for example: tetraethylene glycol or potassium hydroxide) is from 1 wt.% to 10 wt.%, of which 7 wt.% is preferred.
上述單一相混合物,係指即使保質期限長達幾個小時也不會分解出密度不同的複數相的混合物。本發明裡所述的「大氣」,係指市民聚居地上的常見混合氣流。本發明裡的概念「擱置」,不一定是指混合物處於絕對靜止的狀態,通常混合物還是允許移動的。單一相混合物變色,是指單一相混合物相與其原色比較而言發生了變化,尤其是指透明單一相混合物染上了某種顏色。變色開始前的擱置時間受許多參數項的影響,其中尤其是混合物質的參數。擱置時間通常為15分鐘至16小時不等。The above single phase mixture means that a mixture of plural phases having different densities is not decomposed even if the shelf life is as long as several hours. The term "atmosphere" as used in the present invention refers to a common mixed airflow on a community of citizens. The concept of "holding" in the present invention does not necessarily mean that the mixture is in an absolutely stationary state, and usually the mixture is allowed to move. The discoloration of a single phase mixture means that the single phase mixture phase changes as compared to its primary color, especially when the transparent single phase mixture is dyed with a certain color. The hold time before the start of discoloration is affected by many parameter items, especially the parameters of the mixed substance. Shelving time usually ranges from 15 minutes to 16 hours.
生產本發明之劑品時,原則上所有聚乙二醇均適用,其中四甘醇的使用功效已得到實踐證實。當採用該類聚乙二醇時,變色開始前的擱置時間需長達15分鐘至16小時不等。In the production of the agent of the present invention, in principle all polyethylene glycols are suitable, and the use efficiency of tetraethylene glycol has been confirmed by practice. When such polyethylene glycol is used, the residence time before the start of discoloration can be as long as 15 minutes to 16 hours.
結果表明,本發明之劑品與鹼性蝕刻液、尤其是紋路蝕刻液的混合物,具有明顯的蝕刻處理效果。藉由這種摻合方案,蝕刻液適用於各種類型或質級的半導體材料的蝕刻處理,而且採用相同的蝕刻處理參數並可卻得相等的蝕刻處理效果,例如p-或n-矽。這樣,蝕刻處理參數組(即:蝕刻處理配方)的必需數量即可明顯減小,並進而達到優化蝕刻液成分組合和半導體材料蝕刻處理參數的功效。另外,蝕刻液的保質期限也獲得延長。The results show that the mixture of the present invention and the alkaline etching solution, especially the grain etching liquid, has a remarkable etching treatment effect. With this blending scheme, the etchant is suitable for etching of semiconductor materials of various types or grades, and uses the same etching process parameters and can achieve equal etching effects, such as p- or n-矽. Thus, the necessary number of etching process parameter sets (i.e., etching process recipes) can be significantly reduced, and in turn, the efficiency of optimizing the composition of the etching liquid composition and the etching process parameters of the semiconductor material can be achieved. In addition, the shelf life of the etching solution is also extended.
摻合本發明之劑品的紋路蝕刻鹼液,此外還具有其他優點。例如可用同一蝕刻液及採用相同的蝕刻處理參數對單晶或多晶半導體材料(尤其是矽片)實行紋路處理。在習知技術中,矽片一般係採用紋路蝕刻水溶液來處理,例如採用含有0.5至6之鹼金屬氫氧化物及1至10體積百分比之醇類的異丙醇(參見例如US 3,998,659)。在這裡,紋路蝕刻作業通常係在70至90℃的溫度範圍中進行20至75分鐘。當本發明之劑品摻合醇類並加入鹼性蝕刻液裡時,結果表明不但能縮短蝕刻處理時間,而且還能減小鹼性蝕刻液裡的醇類耗用量。試驗結果還表明醇類醇耗用量不但可以減小,而且完全停用醇類(尤其是異丙醇)也是可以的。因此在採用本發明之劑品作為添加劑時,完全棄用醇類為較佳的實施方案。The grain etching lye blended with the agent of the present invention has other advantages. For example, the single crystal or polycrystalline semiconductor material (especially the ruthenium) can be textured using the same etchant and using the same etch processing parameters. In the prior art, the ruthenium is generally treated with a textured etching aqueous solution, for example, isopropanol containing 0.5 to 6 alkali metal hydroxides and 1 to 10 volume percent alcohols (see, for example, US 3,998,659). Here, the grain etching operation is usually carried out in a temperature range of 70 to 90 ° C for 20 to 75 minutes. When the agent of the present invention is blended with an alcohol and added to an alkaline etching solution, the results show that not only the etching treatment time can be shortened, but also the alcohol consumption in the alkaline etching solution can be reduced. The test results also show that the alcohol consumption can be reduced not only, but also the complete cessation of alcohols (especially isopropanol) is also possible. Therefore, when the agent of the present invention is used as an additive, the alcohol is completely discarded as a preferred embodiment.
對於從一塊坯錠鋸切下來的半導體材料,例如借助內孔鋸或鋼絲鋸從一個矽塊鋸切下來的矽片,習知經常需先採用特殊的鋸傷蝕刻處理技術清除所出現的鋸傷,然後才允許用一種紋路蝕刻液對微米化結構實行紋路處理。而採用摻合本發明之劑品的紋路蝕刻液,不但無需使用該鋸傷蝕刻處理技術,而且還能使鋸傷蝕刻處理環節與半導體材料表面紋路處理環節在同一步驟裡完成。For semiconductor materials sawed from a billet, such as a saw blade cut from a crucible by means of a hole saw or a wire saw, it is often necessary to first remove the sawing from the saw by special sawing and etching techniques. Then, the grained structure is allowed to be textured with a grain etchant. The use of the etch etchant blended with the agent of the present invention not only eliminates the use of the slash etch process, but also enables the saw etch process to be performed in the same step as the surface finish of the semiconductor material.
無論在製作本發明之劑品及鹼性蝕刻液時是否採用相同的鹼料,都無礙於上述功效優勢的取得。當製作本發明之劑品時例如採用了氫氧化鈉,那麼劑品成品則可摻合在含有氫氧化鉀的溶液裡。Whether or not the same alkali material is used in the preparation of the agent of the present invention and the alkaline etching solution does not hinder the achievement of the above-mentioned efficacy advantages. When sodium hydroxide is used, for example, in the preparation of the agent of the present invention, the finished product can be blended in a solution containing potassium hydroxide.
在本發明一構思裡,係將單一相混合物擱置在大氣環境裡並直到該單一相混合物變色,且其成色光譜處於橙色與紅棕色之間,其中較佳的擱置時間終結指標係單一相混合物出現紅棕色。試驗結果表明變色色調越深,本發明之劑品的作用效果也就越明顯。不過,雖然本發明之劑品的作用特性在紅棕色時特別高,但在達到某一成色度時會開始衰減。當單一相混合物已變成深棕色或黑色時,其作用效果就只有很低。In one concept of the present invention, a single phase mixture is placed in an atmosphere until the single phase mixture is discolored, and its color forming spectrum is between orange and reddish brown, wherein the preferred shelf time indicator is a single phase mixture. Red-brown. The test results show that the deeper the color tone, the more effective the effect of the agent of the present invention. However, although the action characteristics of the agent of the present invention are particularly high in reddish brown, attenuation begins to occur when a certain degree of color formation is reached. When the single phase mixture has turned dark brown or black, its effect is only very low.
在本發明的另一構思中,還可將至少一種含鹼和水的聚乙二醇摻合到單一相混合物裡。其中較佳採用一種鹼金屬氫氧化物水溶液與至少一種聚乙二醇相互混合。實踐表明,鹼金屬氫氧化物水溶液裡的鹼金屬氫氧化物含量需至少達到20 wt.%才能卻得較好的效果。在選用含水量時,既要保持單一相混合物順利形成,又要避免混合物在一定保質時間過期之後分解成複數相。In another concept of the invention, at least one alkali and water containing polyethylene glycol can also be blended into a single phase mixture. Preferably, an aqueous alkali metal hydroxide solution is mixed with at least one polyethylene glycol. Practice has shown that the alkali metal hydroxide content in the aqueous alkali metal hydroxide solution needs to be at least 20 wt.% in order to obtain a good effect. When selecting the water content, it is necessary to keep the single phase mixture formed smoothly, and to prevent the mixture from decomposing into a complex phase after a certain shelf life expires.
在本發明一構思裡,此外還可將一非氧化酸摻合到單一相混合物裡,其中較佳採用鹽酸或醋酸。本發明之劑品的功效雖然如上所言在時間上不是很穩定,但通過上述摻合非氧化酸的方法可以改善該穩定性並進而改善儲存特性。因此,含有非氧化酸的劑品同樣可儲存很長的時間。在添加非氧化酸時,較佳做法是將低於7的pH值調整為低於3。在單一相混合物已發生變色後,才應將非氧化酸添入。In one concept of the invention, a non-oxidizing acid may also be blended into the single phase mixture, with hydrochloric acid or acetic acid being preferred. Although the efficacy of the agent of the present invention is not very stable in time as described above, the stability can be improved and the storage property can be improved by the above method of blending a non-oxidizing acid. Therefore, a non-oxidizing acid-containing agent can also be stored for a long time. When a non-oxidizing acid is added, it is preferred to adjust the pH below 7 to less than 3. Non-oxidizing acids should be added after the single phase mixture has changed color.
在本發明另一構思裡,較佳做法是在單一相混合物變色之後給單一相混合物添加水及至少一種鹼金屬氫氧化物,並首選氫氧化鈉或氫氧化鉀。通過採取以上所述各種形式之任一種,即可完成所述蝕刻液或紋路蝕刻液的製作。混合劑裡的單一相混合物體積份量位於0.01%至5%之間,其中較佳為0.01%至1%,更佳為0.07%至0.3%。如上所述,在習知技術中迄今係通常將醇類(尤其是異丙醇)添加到此類蝕刻液裡。而按上述形式製作的溶液,原則上也可像以前那樣添加醇類(尤其是異丙醇),只不過所需用量很小,甚至可藉由單一相混合物來替代。因此在採用本發明之劑品作為添加劑時,完全可棄用醇類。In another concept of the invention, it is preferred to add water and at least one alkali metal hydroxide to the single phase mixture after discoloration of the single phase mixture, with sodium hydroxide or potassium hydroxide being preferred. The fabrication of the etchant or grain etchant can be accomplished by employing any of the various forms described above. The volume fraction of the single phase mixture in the mixture is between 0.01% and 5%, preferably 0.01% to 1%, more preferably 0.07% to 0.3%. As described above, in the prior art, alcohols (especially isopropyl alcohol) have been conventionally added to such etching liquids. The solution prepared in the above form can, in principle, be added with an alcohol (especially isopropanol) as before, except that the amount required is small and can even be replaced by a single phase mixture. Therefore, when the agent of the present invention is used as an additive, the alcohol can be completely discarded.
本發明之劑品的所有實施方案,均可作為添加劑摻合到半導體材料的鹼性蝕刻液裡,添加到無機半導體材料(例如單晶矽或多晶矽)的鹼性蝕刻液裡則更佳,尤其是作為紋路蝕刻液的添加劑。All embodiments of the agent of the present invention can be incorporated as an additive into an alkaline etching solution of a semiconductor material, and are preferably added to an alkaline etching solution of an inorganic semiconductor material (for example, single crystal germanium or polycrystalline germanium), especially It is an additive for the grain etching liquid.
在上述摻合水和至少一鹼金屬氫氧化物的方案中,本發明之劑品可作為單獨的紋路蝕刻液用於半導體材料,較佳為無機半導體材料並尤其是矽材料(單晶或多晶矽片)的處理,例如用於矽片表面紋路處理並製作一些方向隨機不定的棱錐。這點,在單晶矽表面處理上的效果尤其明顯。棱錐高度會受到所用紋路蝕刻液裡的單一相混合物含量的影響。In the above-mentioned scheme of blending water and at least one alkali metal hydroxide, the agent of the present invention can be used as a separate grain etching liquid for a semiconductor material, preferably an inorganic semiconductor material and especially a germanium material (single crystal or polycrystalline germanium). The processing of the film, for example, is used for the surface texture processing of the cymbal sheet and to make some pyramids with random directions. In this regard, the effect on the surface treatment of single crystal germanium is particularly remarkable. The height of the pyramid is affected by the amount of the single phase mixture in the etchant used.
本發明之劑品的製作方法,是將至少一種聚乙二醇與一種鹼料混合並形成一種單一相混合物,然後等待該單一相混合物變色。在以上內容裡,已闡明術語「鹼」、「單一相混合物」和「變色」等的定義。當單一相混合物被露天存放在大氣中時,成色色調會發生變化。此外不排除還有其他大氣環境也可適用于單一相混合物的變色處理。另外,也可將大氣或其他形式的混合氣充入單一相混合物內或從單一相混合物裡吹過,並進而達到縮短等候時間的目地。The agent of the present invention is prepared by mixing at least one polyethylene glycol with an alkali material and forming a single phase mixture, and then waiting for the single phase mixture to discolor. In the above, the definitions of the terms "alkali", "single phase mixture" and "discoloration" have been clarified. When the single phase mixture is stored in the open air in the open air, the color tone will change. Furthermore, it is not excluded that other atmospheric environments are also applicable to the discoloration treatment of a single phase mixture. Alternatively, atmospheric or other forms of the mixture may be charged into the single phase mixture or blown from the single phase mixture, thereby achieving a shorter waiting time.
在本發明一種製作方法方案中,係將至少一種聚乙二醇與鹼料和水混合成單一相混合物。其中較佳方案係將至少一種聚乙二醇與一種鹼性水溶液相混合,例如氫氧化鈉水溶液或氫氧化鉀水溶液。這裡的水含量,如上述應按單一相混合物不會分解成多相的原則來具體選用。In one embodiment of the process of the invention, at least one polyethylene glycol is mixed with an alkali material and water to form a single phase mixture. Preferably, at least one of the polyethylene glycols is mixed with an aqueous alkaline solution, such as an aqueous solution of sodium hydroxide or an aqueous solution of potassium hydroxide. The water content here, as described above, should be specifically selected based on the principle that the single phase mixture does not decompose into multiple phases.
鹼料較佳採用鹼金屬氫氧化物,尤其是氫氧化鈉或氫氧化鉀。對單一相混合物裡的鹼金屬氫氧化物或由多種鹼金屬氫氧化物合成的混合物進行配料時,採用1%至10%的成分含量,且較佳含量為7%。The alkali material is preferably an alkali metal hydroxide, especially sodium hydroxide or potassium hydroxide. When the alkali metal hydroxide in a single phase mixture or a mixture of a plurality of alkali metal hydroxides is compounded, a component content of 1% to 10% is used, and a content of 7% is preferably used.
在本發明一種較佳方案中,係等候單一相混合物的成色光譜達到橙色與紅棕色之間。如上所述,單一相混合物的具體成色對其實際功效有影響作用。因此需等待單一相混合物變成紅棕色,原因是呈現該種色調的單一相混合物具有特高功效。In a preferred embodiment of the invention, the coloration spectrum of the single phase mixture is expected to reach between orange and reddish brown. As noted above, the specific coloration of a single phase mixture has an effect on its actual efficacy. It is therefore necessary to wait for the single phase mixture to turn reddish brown, since the single phase mixture exhibiting this hue has exceptionally high efficacy.
在本發明一較佳製作方法方案中,係先將單一相混合物加熱到至少40℃,較佳為40℃至120℃(尤其是75℃至85℃)之間。用於加熱單一相混合物的加熱裝置,較佳關閉時間點係在目標溫度已達到之後,不過在等候變色期間也可保持開啟狀態。In a preferred embodiment of the invention, the single phase mixture is first heated to at least 40 ° C, preferably between 40 ° C and 120 ° C (especially between 75 ° C and 85 ° C). The heating means for heating the single phase mixture preferably has a closing time point after the target temperature has been reached, but remains open during the waiting for discoloration.
在本發明一構思裡,此外還可將一非氧化酸摻合到單一相混合物裡,其中較佳採用鹽酸或醋酸。如上所述,藉由該做法可改善劑品的功效穩定時限,並進而改善其儲存特性。酸料需在單一相混合物變色完成之後才添加進去。在確定非氧化酸的添加濃度及添加量時,較佳做法是將單一相混合物低於7的pH值調整到低於3。In one concept of the invention, a non-oxidizing acid may also be blended into the single phase mixture, with hydrochloric acid or acetic acid being preferred. As described above, by this method, the efficacy of the preparation can be improved, and the storage characteristics can be improved. The acid material needs to be added after the single phase mixture has been discolored. In determining the concentration and amount of addition of the non-oxidizing acid, it is preferred to adjust the pH of the single phase mixture below 7 to below 3.
試驗結果表明,德國專利DE 10 2008 056 086中所述的習知劑品同樣可藉由添加非氧化酸而改善功效時效。對於由至少一種聚乙二醇與鹼料混合而成、隨後擱置於大氣環境及溫度範圍由大約25℃至二相形成且最後分解出低密度劑品表相的劑品,可藉由將一種非氧化酸(首選:鹽酸或醋酸)添加到低密度分解相裡達到功效穩定。在添加非氧化酸時,較佳做法是將劑品低於7的pH值調整到低於3。The test results show that the conventional formulations described in the German patent DE 10 2008 056 086 can also be used to improve the efficacy aging by adding a non-oxidizing acid. By using a mixture of at least one polyethylene glycol and an alkali material, which is subsequently placed in the atmosphere and having a temperature ranging from about 25 ° C to two phases and finally decomposing the surface of the low density agent, Non-oxidizing acid (preferred: hydrochloric acid or acetic acid) is added to the low-density decomposition phase to achieve stable efficacy. When a non-oxidizing acid is added, it is preferred to adjust the pH of the agent below 7 to below 3.
上述藉由摻合例如鹽酸或醋酸等非氧化酸而延長功效時限的穩定法,既適用於德國專利DE 10 2008 056 086中所述劑品的所有從屬結構方案和實施方案,也適用於其製作方法,並且具有較佳的效果。在所述混合物中,較佳採用例如氫氧化鈉或氫氧化鉀的鹼金屬氫氧化物作為鹼料、四甘醇作為至少一種聚乙二醇或摻水來加以合成。The above-mentioned stabilization method for prolonging the efficacy time by blending a non-oxidizing acid such as hydrochloric acid or acetic acid is suitable for all subordinate structural solutions and embodiments of the formulations described in German Patent DE 10 2008 056 086, and is also suitable for its production. The method has a better effect. In the mixture, an alkali metal hydroxide such as sodium hydroxide or potassium hydroxide is preferably used as an alkali material, tetraethylene glycol is synthesized as at least one polyethylene glycol or water is added.
而在低密度分解相裡添加水和鹼金屬氫氧化物(首選:氫氧化鈉或氫氧化鉀)以形成紋路蝕刻液時,再加入一非氧化酸則有相當的益處。至於是另外再添加醇類(首選異丙醇),還是按所述方式添加非氧化酸,兩者其實是一樣的。無論是哪種形式,均可放棄使用醇類並進而避免其中的缺點。When water and alkali metal hydroxide (preferred: sodium hydroxide or potassium hydroxide) are added to the low-density decomposition phase to form a textured etching solution, the addition of a non-oxidizing acid has considerable advantages. As for whether to add additional alcohols (preferred isopropyl alcohol) or to add non-oxidizing acids as described, the two are actually the same. Either way, you can abandon the use of alcohols and avoid the disadvantages.
在DE 10 2008 056 086披露的一種製作方法方案中,係將至少一聚乙二醇與一鹼料混合,然後在二相形成之後再從該混合物釋出低密度劑品表相,隨後再給該分解相添加非氧化酸(首選:鹽酸或醋酸)。In a production method disclosed in DE 10 2008 056 086, at least one polyethylene glycol is mixed with an alkali material, and then the low-density agent surface is released from the mixture after the two phases are formed, and then given The decomposed phase is added with a non-oxidizing acid (preferred: hydrochloric acid or acetic acid).
然後等待低密度分解相的成色光譜達到橙色與紅棕色之間,例如橙色或紅棕色。較佳在低密度相完成變色之後,再加入非氧化酸。The color spectrum of the low density decomposition phase is then waited for between orange and reddish brown, such as orange or reddish brown. Preferably, after the discoloration of the low density phase is completed, a non-oxidizing acid is further added.
圖1為本發明之劑品一實施例的製作流程圖。如圖所示,該實施例係將四甘醇作為至少一聚乙二醇且將氫氧化鉀(KOH)作為鹼料來作為混合成分。這些成分相互混合成單一相混合物(步驟10)。該單一相混合物隨後被加熱到80℃(步驟12)。然後將該單一相混合物擱置(步驟14),直至其色調變成紅棕色。在圖1所示實施例裡,係將單一相混合物擱置在大氣環境裡(步驟14)。在本實施例中,熱源在已達到80℃的目標溫度之後關斷,以使單一相混合物在擱置(步驟14)期間冷卻。在擱置10至120分鐘之後(步驟14),單一相混合物的色調變成紅棕色。藉由在擱置(步驟14)期間繼續加熱,雖可加快單一相混合物變色,不過本發明之劑品的功效卻也會隨之衰減。BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a flow chart showing the fabrication of an embodiment of the present invention. As shown in the figure, this example uses tetraethylene glycol as at least one polyethylene glycol and potassium hydroxide (KOH) as an alkali component as a mixed component. These ingredients are mixed into a single phase mixture (step 10). The single phase mixture is then heated to 80 ° C (step 12). The single phase mixture is then left on (step 14) until its hue turns reddish brown. In the embodiment shown in Figure 1, the single phase mixture is placed in the atmosphere (step 14). In this embodiment, the heat source is turned off after the target temperature of 80 ° C has been reached to allow the single phase mixture to cool during the rest (step 14). After leaving for 10 to 120 minutes (step 14), the hue of the single phase mixture turns reddish brown. By continuing to heat during the rest (step 14), the discoloration of the single phase mixture can be accelerated, but the efficacy of the agent of the present invention is also attenuated.
圖2為本發明之劑品製作方法一實施例示意圖。如圖2所示,技術第一步驟係將四甘醇與一氫氧化鈉水溶液(NaOH-溶液)混合成一單一相混合物(步驟20)。再將該單一相混合物加熱到至少40℃(步驟22),較佳為40℃至120℃(首選75℃至85℃範圍之間)。然後將等待該單一相混合物變成紅棕色(步驟24)。此現象通常在15分鐘至16小時的等待期間發生。2 is a schematic view showing an embodiment of a method for producing a pharmaceutical product of the present invention. As shown in Figure 2, the first step of the technique is to mix tetraethylene glycol with an aqueous solution of sodium hydroxide (NaOH-solution) to form a single phase mixture (step 20). The single phase mixture is then heated to at least 40 ° C (step 22), preferably from 40 ° C to 120 ° C (preferably between 75 ° C and 85 ° C). The single phase mixture will then be waited to turn reddish brown (step 24). This phenomenon usually occurs during a waiting period of 15 minutes to 16 hours.
圖1所示流程明顯屬於本發明之製作方法的另一實施例,原因在這裡係等候單一相混合物在擱置(步驟14)期間變成紅棕色。本發明之劑品另一實施例還可藉由圖2所示方法來製作,條件是該單一相混合物在等待變色(步驟24)期間係接受本發明所述「擱置」。The process illustrated in Figure 1 clearly pertains to another embodiment of the fabrication method of the present invention, as it is here that the single phase mixture is rendered reddish brown during shelving (step 14). Another embodiment of the agent of the present invention can also be made by the method of Figure 2, provided that the single phase mixture is subjected to the "shelving" of the present invention while awaiting discoloration (step 24).
圖3為圖1、圖2所示實施例的各種步驟示圖,圖3圖解灌注在一個容器(50)內的單一相混合物(52)藉由一個加熱裝置(54)接受加熱(步驟12和22)。圖1、圖2所示實施例裡的單一相混合物(52)原來是透明的,但在擱置(步驟14)或等待(步驟24)之後變成圖1、圖2所示的紅棕色,並因此變成色調已變的單一相混合物(56)。Figure 3 is a diagram showing various steps of the embodiment of Figures 1 and 2, and Figure 3 illustrates the single phase mixture (52) poured in a container (50) being heated by a heating device (54) (step 12 and twenty two). The single phase mixture (52) in the embodiment shown in Figures 1 and 2 is originally transparent, but becomes reddish brown as shown in Figures 1 and 2 after being left (step 14) or waiting (step 24), and thus It becomes a single phase mixture (56) whose color tone has changed.
無論是圖1還是第2圖所示實施例中的一種或任意多種聚乙二醇(尤其是四甘醇)合成的混合物,均可添加任一種鹼金屬氫氧化物或任一種鹼金屬氫氧化物水溶液,其中較佳的是分別採用NaOH或一種KOH水溶液。如上所述,在選用相應的水溶液含水量時,需避免由此所成的混合物分解成多相。Either the mixture of one or any of a plurality of polyethylene glycols (especially tetraethylene glycol) synthesized in the embodiment shown in Fig. 1 or Fig. 2 may be added with any alkali metal hydroxide or any alkali metal hydroxide. Aqueous solutions, preferably using NaOH or an aqueous KOH solution, respectively. As described above, when the corresponding aqueous solution water content is selected, it is necessary to prevent the resulting mixture from decomposing into a plurality of phases.
圖4係圖1所示本發明之劑品實施例及圖2所示本發明製作方法實施例的備選方案的原理圖解。如圖4所示,圖1、圖2所示單一相混合物在擱置(步驟14)或等待完成變色(步驟24)之後被加入鹽酸(步驟26)。如上所述,藉由此種方式可改善劑品成品的功效穩定時效性,使其儲存時間更長。Figure 4 is a schematic illustration of an alternative embodiment of the embodiment of the invention illustrated in Figure 1 and an alternative embodiment of the method of making the invention illustrated in Figure 2. As shown in Figure 4, the single phase mixture of Figures 1 and 2 is added with hydrochloric acid after standing (step 14) or waiting for completion of the color change (step 24) (step 26). As described above, in this way, the efficacy and stability of the finished product can be improved, and the storage time is longer.
圖5係圖1、圖2、圖4所示實施例的另一備選擴展方案示意圖,如圖所示,可在圖1、圖2、圖4所示步驟完成之後再包括一附加步驟(28),並係將至少一鹼金屬氫氧化物和水添加到單一相混合物裡。由此獲得的劑品可作為蝕刻液並尤其是紋路蝕刻液使用,並對矽材料具有良好的紋路蝕刻處理效果,尤其是對單晶矽片的紋路蝕刻處理。作為蝕刻液成分之一的至少一鹼金屬氫氧化物,較佳採用NaOH或KOH,其中該至少一鹼金屬氫氧化物的選用量不受單一相混合物(52)裡的鹼含量的影響。實踐表明,單一相混合物在混合物裡的體積份量應位於0.01%至5%範圍內,其中0.01%至1%為較佳,而0.07%至0.3%則更佳。FIG. 5 is a schematic diagram of another alternative embodiment of the embodiment shown in FIG. 1, FIG. 2, and FIG. 4. As shown in the figure, an additional step may be included after the steps shown in FIG. 1, FIG. 2, and FIG. 4 are completed. 28), adding at least one alkali metal hydroxide and water to the single phase mixture. The thus obtained agent can be used as an etching liquid and especially a grain etching liquid, and has a good grain etching treatment effect on the tantalum material, in particular, a grain etching process on the single crystal chip. As the at least one alkali metal hydroxide which is one of the components of the etching liquid, NaOH or KOH is preferably used, wherein the at least one alkali metal hydroxide is selected in an amount which is not affected by the alkali content in the single phase mixture (52). Practice has shown that the volume fraction of the single phase mixture in the mixture should be in the range of 0.01% to 5%, with 0.01% to 1% being preferred and 0.07% to 0.3% being more preferred.
上述實施例僅係為了方便說明而舉例而已,本發明所主張之權利範圍自應以申請專利範圍所述為準,而非僅限於上述實施例。The above-mentioned embodiments are merely examples for convenience of description, and the scope of the claims is intended to be limited to the above embodiments.
50...容器50. . . container
52...單一相混合物52. . . Single phase mixture
54...加熱裝置54. . . heating equipment
56...已變色的單一相混合物56. . . Discolored single phase mixture
為充分瞭解本發明之目的、特徵及功效,茲藉由下述具體之實施例,並配合所附之圖式(功能相同的元件,其元件符號也相同)對本發明做一詳細說明,圖示說明:In order to fully understand the object, features and advantages of the present invention, the present invention will be described in detail by the following specific embodiments, and the accompanying drawings (the elements having the same function, the same reference numerals) Description:
圖1係本發明之劑品一實施例的製作流程圖。BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a flow chart showing the fabrication of an embodiment of the present invention.
圖2係本發明之劑品製作方法一實施例示意圖。Fig. 2 is a schematic view showing an embodiment of a method for producing a pharmaceutical product of the present invention.
圖3係圖1、圖2所示實施例的各種步驟示圖。Figure 3 is a diagram showing various steps of the embodiment shown in Figures 1 and 2.
圖4係圖1、圖2所示實施例的備選方案。Figure 4 is an alternative to the embodiment shown in Figures 1 and 2.
圖5係圖1、圖2、圖4所示實施例的另一備選方案。Figure 5 is another alternative to the embodiment shown in Figures 1, 2, and 4.
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US5035809A (en) * | 1990-10-05 | 1991-07-30 | Eastman Kodak Company | Dichloromethane abatement |
US20090280597A1 (en) * | 2008-03-25 | 2009-11-12 | Kapila Wijekoon | Surface cleaning and texturing process for crystalline solar cells |
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US3998659A (en) | 1974-01-28 | 1976-12-21 | Texas Instruments Incorporated | Solar cell with semiconductor particles and method of fabrication |
US3909325A (en) * | 1974-06-28 | 1975-09-30 | Motorola Inc | Polycrystalline etch |
US5536439A (en) * | 1995-03-13 | 1996-07-16 | Gage Products Company | Non-abrasive line cleaning composition |
DE19811878C2 (en) * | 1998-03-18 | 2002-09-19 | Siemens Solar Gmbh | Process and etching solution for wet chemical pyramidal texture etching of silicon surfaces |
JP2002322578A (en) * | 2001-04-24 | 2002-11-08 | Noritake Co Ltd | Etching solution for aluminum thin film and method for forming aluminum thin pattern |
DE102006051952A1 (en) * | 2006-11-01 | 2008-05-08 | Merck Patent Gmbh | Particle-containing etching pastes for silicon surfaces and layers |
SG166102A1 (en) * | 2007-03-31 | 2010-11-29 | Advanced Tech Materials | Methods for stripping material for wafer reclamation |
TW200842970A (en) * | 2007-04-26 | 2008-11-01 | Mallinckrodt Baker Inc | Polysilicon planarization solution for planarizing low temperature poly-silicon thin filim panels |
WO2009067475A1 (en) * | 2007-11-19 | 2009-05-28 | Applied Materials, Inc. | Crystalline solar cell metallization methods |
DE102008056086A1 (en) | 2008-11-06 | 2010-05-12 | Gp Solar Gmbh | An additive for alkaline etching solutions, in particular for texture etching solutions and process for its preparation |
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US5035809A (en) * | 1990-10-05 | 1991-07-30 | Eastman Kodak Company | Dichloromethane abatement |
US20090280597A1 (en) * | 2008-03-25 | 2009-11-12 | Kapila Wijekoon | Surface cleaning and texturing process for crystalline solar cells |
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