TWI466596B - 電漿製程設備（一） - Google Patents

電漿製程設備（一） Download PDF

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Publication number
TWI466596B
TWI466596B TW100126419A TW100126419A TWI466596B TW I466596 B TWI466596 B TW I466596B TW 100126419 A TW100126419 A TW 100126419A TW 100126419 A TW100126419 A TW 100126419A TW I466596 B TWI466596 B TW I466596B
Authority
TW
Taiwan
Prior art keywords
plate
base plate
insulating
plasma processing
processing apparatus
Prior art date
Application number
TW100126419A
Other languages
English (en)
Chinese (zh)
Other versions
TW201236516A (en
Inventor
Hyoung Kyu Son
Original Assignee
Lig Adp Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lig Adp Co Ltd filed Critical Lig Adp Co Ltd
Publication of TW201236516A publication Critical patent/TW201236516A/zh
Application granted granted Critical
Publication of TWI466596B publication Critical patent/TWI466596B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/466—Radiofrequency discharges using capacitive coupling means, e.g. electrodes

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
TW100126419A 2011-02-22 2011-07-26 電漿製程設備（一） TWI466596B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110015600A KR101196422B1 (ko) 2011-02-22 2011-02-22 플라즈마 처리장치

Publications (2)

Publication Number Publication Date
TW201236516A TW201236516A (en) 2012-09-01
TWI466596B true TWI466596B (zh) 2014-12-21

Family

ID=46659338

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100126419A TWI466596B (zh) 2011-02-22 2011-07-26 電漿製程設備（一）

Country Status (3)

Country Link
KR (1) KR101196422B1 (ko)
CN (1) CN102646569B (ko)
TW (1) TWI466596B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220189746A1 (en) * 2020-12-16 2022-06-16 Samsung Electronics Co., Ltd. Semiconductor processing equipment including electrostatic chuck for plasma processing

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10049862B2 (en) * 2015-04-17 2018-08-14 Lam Research Corporation Chamber with vertical support stem for symmetric conductance and RF delivery
CN115397347A (zh) * 2020-03-19 2022-11-25 卡普斯医疗有限公司 具有多个定向特征的电浆系统

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7074298B2 (en) * 2002-05-17 2006-07-11 Applied Materials High density plasma CVD chamber
US20080129185A1 (en) * 2006-06-12 2008-06-05 The Board Of Trustees Of The University Of Illinois Low voltage microcavity plasma device and addressable arrays
TW200947583A (en) * 2007-09-05 2009-11-16 Advanced Display Proc Eng Co Lower electrode assembly for processing substrates
TW201031280A (en) * 2008-07-23 2010-08-16 Applied Materials Inc Workpiece support for a plasma reactor with controlled apportionment of RF power to a process kit ring

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6228438B1 (en) * 1999-08-10 2001-05-08 Unakis Balzers Aktiengesellschaft Plasma reactor for the treatment of large size substrates
JP4707588B2 (ja) * 2006-03-16 2011-06-22 東京エレクトロン株式会社 プラズマ処理装置及びそれに用いられる電極
JP5643528B2 (ja) * 2009-03-30 2014-12-17 東京エレクトロン株式会社 基板処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7074298B2 (en) * 2002-05-17 2006-07-11 Applied Materials High density plasma CVD chamber
US20080129185A1 (en) * 2006-06-12 2008-06-05 The Board Of Trustees Of The University Of Illinois Low voltage microcavity plasma device and addressable arrays
TW200947583A (en) * 2007-09-05 2009-11-16 Advanced Display Proc Eng Co Lower electrode assembly for processing substrates
TW201031280A (en) * 2008-07-23 2010-08-16 Applied Materials Inc Workpiece support for a plasma reactor with controlled apportionment of RF power to a process kit ring

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220189746A1 (en) * 2020-12-16 2022-06-16 Samsung Electronics Co., Ltd. Semiconductor processing equipment including electrostatic chuck for plasma processing
US11862440B2 (en) * 2020-12-16 2024-01-02 Samsung Electronics Co., Ltd. Semiconductor processing equipment including electrostatic chuck for plasma processing

Also Published As

Publication number Publication date
CN102646569B (zh) 2015-02-11
KR20120096284A (ko) 2012-08-30
KR101196422B1 (ko) 2012-11-01
TW201236516A (en) 2012-09-01
CN102646569A (zh) 2012-08-22

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