TWI466337B - Method of manufacturing side view led - Google Patents
Method of manufacturing side view led Download PDFInfo
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- TWI466337B TWI466337B TW101129292A TW101129292A TWI466337B TW I466337 B TWI466337 B TW I466337B TW 101129292 A TW101129292 A TW 101129292A TW 101129292 A TW101129292 A TW 101129292A TW I466337 B TWI466337 B TW I466337B
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- mold
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- emitting diode
- refractive
- light
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- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000010410 layer Substances 0.000 claims description 64
- 239000000758 substrate Substances 0.000 claims description 18
- 239000011241 protective layer Substances 0.000 claims description 11
- 239000008393 encapsulating agent Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 238000005538 encapsulation Methods 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 239000004408 titanium dioxide Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 7
- 238000005286 illumination Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Description
本發明涉及一種半導體結構，尤其涉及一種具有折射層的側光式發光二極體的形成方法。The present invention relates to a semiconductor structure, and more particularly to a method of forming an edge-lit LED having a refractive layer.
相比於傳統的發光源，發光二極體（Light Emitting Diode，LED）具有重量輕、體積小、污染低、壽命長等優點，其作為一種新型的發光源，已經被越來越多地應用到各領域當中，如路燈、交通燈、信號燈、射燈及裝飾燈等。Compared with the traditional illumination source, the Light Emitting Diode (LED) has the advantages of light weight, small volume, low pollution and long life. It has been used as a new type of illumination source. In various fields, such as street lamps, traffic lights, signal lights, spotlights and decorative lights.
先前的側光式發光二極體的製作方法，一般地，在發光二極體晶片的出光面設置有反射層，以將發光二極體晶片發出的光反射至側邊出射。然而，發光二極體晶片發出的光線經過反射層時，部分光線容易穿過反射層，而無法被反射至側邊出射，從而降低了發光效率。In the conventional method of fabricating the edge-light-emitting diode, generally, a light-emitting surface of the light-emitting diode wafer is provided with a reflective layer to reflect the light emitted from the light-emitting diode wafer to the side. However, when the light emitted from the LED chip passes through the reflective layer, part of the light easily passes through the reflective layer and cannot be reflected to the side to be emitted, thereby reducing the luminous efficiency.
有鑒於此，有必要提供一種發光效率高的側光式發光二極體的形成方法。In view of the above, it is necessary to provide a method of forming a side-light type light-emitting diode having high luminous efficiency.
一種側光式發光二極體的製作方法，其包括：A method for fabricating a side-lighting light-emitting diode, comprising:
提供一個模具，該模具包括一凸出部，該凸出部內形成一個收容空間，該凸出部上開設有將收容空間與外部連通的一個開口；Providing a mold, the mold includes a protrusion, the protrusion forming a receiving space therein, and the protrusion is provided with an opening for communicating the receiving space with the outside;
在該模具的內表面上形成一反射層；Forming a reflective layer on the inner surface of the mold;
提供一個板狀的折射膠帶，該折射膠帶的端部延伸至位於該模具的凸出部的邊緣；Providing a plate-shaped refractive tape, the end of the refractive tape extending to an edge of the protrusion of the mold;
通過該凸出部的開口抽真空以吸取該折射膠帶，直至該折射膠帶吸附於該反射層上，以形成一折射層；Vacuuming the opening of the protruding portion to absorb the refractive tape until the refractive tape is adsorbed on the reflective layer to form a refractive layer;
提供一個基板，該基板上設置有至少兩個發光二極體晶片，將形成有折射層的該模具設置在該基板上，該至少兩個發光二極體晶片收容於該收容空間內；Providing a substrate on which at least two light emitting diode chips are disposed, the mold on which the refractive layer is formed is disposed on the substrate, and the at least two light emitting diode chips are received in the receiving space;
向該收容空間內注入封裝膠，且固化該封裝膠，以形成封裝層；Injecting an encapsulant into the receiving space, and curing the encapsulant to form an encapsulation layer;
去除該模具；Removing the mold;
切割該基板、封裝層、折射層以及反射層，以形成至少兩個側光式發光二極體。The substrate, the encapsulation layer, the refractive layer, and the reflective layer are cut to form at least two edge-lit LEDs.
該側光式發光二極體的製造方法，通過抽真空吸取形成有折射層。該發光二極體晶片發出的光部分被折射層直接折射至側邊出射，部分透過該折射層的光線再經過該反射層反射，然後再通過折射層折射至側邊出射，從而可提高該側光發光二極體的出光效率。並且，該折射層通過真過抽真空吸取的方式形成，其可形成薄且均勻的折射層。In the method for producing the edge-light-emitting diode, a refractive layer is formed by vacuum suction. The light emitted by the light-emitting diode wafer is directly refracted by the refractive layer to the side, and the light partially transmitted through the refractive layer is reflected by the reflective layer, and then refracted to the side through the refractive layer, thereby improving the side. The light-emitting efficiency of the light-emitting diode. Also, the refractive layer is formed by vacuum suction, which forms a thin and uniform refractive layer.
圖1至圖10示出本發明一實施方式提供的一種側光式發光二極體的製作方法，其包括如下步驟：FIG. 1 to FIG. 10 illustrate a method for fabricating an edge-lit LED according to an embodiment of the present invention, which includes the following steps:
步驟一：請參見圖1，提供一個模具10，該模具10包括一個呈環狀的平板部11以及與該平板部11相連接且位於該平板部11中的凸出部12，該平板部11與該凸出部12配合形成一個收容空間13，該凸出部12上具有一個開口121。在本實施例中，該平板部11為圓環狀，該凸出部12呈近似的半球狀，該開口121位於該凸出部12的正中心。該平板部11及凸出部12的形狀可依所需發光二極體的外形而設。該模具10具有一個內表面110。可以理解的是，該模具10也可以僅具有凸出部12，而不包括平板部11。Step 1: Referring to Fig. 1, a mold 10 is provided. The mold 10 includes a flat plate portion 11 and a projection 12 connected to the flat plate portion 11 and located in the flat plate portion 11, the flat portion 11 Cooperating with the protruding portion 12, a receiving space 13 is formed, and the protruding portion 12 has an opening 121 therein. In the present embodiment, the flat plate portion 11 has an annular shape, and the convex portion 12 has an approximately hemispherical shape, and the opening 121 is located at the center of the convex portion 12. The shape of the flat portion 11 and the protruding portion 12 can be set according to the outer shape of the desired light-emitting diode. The mold 10 has an inner surface 110. It can be understood that the mold 10 can also have only the projections 12 without including the flat plate portion 11.
步驟二：請參見圖2，形成一保護層20於該模具10的內表面110上。在本實施例中，該保護層20為一個塑膠層，其用於後續容易去除該模具10。Step 2: Referring to FIG. 2, a protective layer 20 is formed on the inner surface 110 of the mold 10. In the present embodiment, the protective layer 20 is a plastic layer for subsequent easy removal of the mold 10.
步驟三：請參見圖3，在該保護層20上形成一反射層30。在本實施例中，該反射層30可以為金屬層，其通過濺鍍形成在該保護層20上。當然，該反射層30也可以為金屬複合物層或塑膠層等。該反射層30的厚度為0.1到0.3納米。Step 3: Referring to FIG. 3, a reflective layer 30 is formed on the protective layer 20. In the embodiment, the reflective layer 30 may be a metal layer formed on the protective layer 20 by sputtering. Of course, the reflective layer 30 can also be a metal composite layer or a plastic layer. The reflective layer 30 has a thickness of 0.1 to 0.3 nm.
步驟四：請參見圖4，提供一個板狀的折射膠帶40，該折射膠帶40的端部41延伸至位於該模具10的平板部11的反射層30上。在本實施例中，該折射膠帶40的厚度為50到100納米。該折射膠帶40中包括有二氧化鈦顆粒、氧化鋅顆粒、或者二氧化矽顆粒等高折射粒子，因此，該折射膠帶40具有較好的折射率。可以理解的是，當該模具10僅包括凸出部12，該折射膠帶40的端部41延伸至位於該模具10的凸出部12的邊緣。Step 4: Referring to Figure 4, a plate-like refractive tape 40 is provided, the end portion 41 of which extends onto the reflective layer 30 of the flat portion 11 of the mold 10. In the present embodiment, the refractive tape 40 has a thickness of 50 to 100 nm. The refractive tape 40 includes high refractive particles such as titanium oxide particles, zinc oxide particles, or cerium oxide particles, and therefore, the refractive tape 40 has a good refractive index. It will be understood that when the mold 10 includes only the projections 12, the end portion 41 of the refractive tape 40 extends to the edge of the projection 12 of the mold 10.
步驟五：請參見圖5，通過該凸出部12的開口121抽真空以吸取該折射膠帶40，直至該折射膠帶40吸附於該反射層30上，以形成一折射層42。Step 5: Referring to FIG. 5, the refractive tape 40 is sucked by the opening 121 of the protruding portion 12 until the refractive tape 40 is adsorbed on the reflective layer 30 to form a refractive layer 42.
步驟六：請參見圖6，提供一個基板50，該基板50上設置有兩個發光二極體晶片60，將形成有折射層42的該模具10設置在該基板50上，該兩個發光二極體晶片60收容於該收容空間13內，且位於該模具10的平板部11上的折射層42與該基板50之間具有一間隙70。在本實施例中，該基板50具有一個上表面51。該基板50包括一個位於該上表面51上的凸台52，該兩個發光二極體晶片60設置在該凸台52的相對兩端，即該兩個發光二極體晶片60位於該模具10的開口121的相對兩側。可以理解的是，設置在該基板50上的發光二極體晶片60也可以為多個，例如，當發光二極體晶片60為四個時，可以將該四個發光二極體晶片60分別設置在該凸台52的四個端部。Step 6: Referring to FIG. 6, a substrate 50 is provided. The substrate 50 is provided with two LED chips 60. The mold 10 on which the refractive layer 42 is formed is disposed on the substrate 50. The polar body wafer 60 is housed in the accommodating space 13 and has a gap 70 between the refracting layer 42 on the flat plate portion 11 of the mold 10 and the substrate 50. In the present embodiment, the substrate 50 has an upper surface 51. The substrate 50 includes a boss 52 on the upper surface 51. The two LED chips 60 are disposed at opposite ends of the boss 52, that is, the two LED wafers 60 are located in the mold 10. The opposite sides of the opening 121. It can be understood that there may be a plurality of LEDs 60 disposed on the substrate 50. For example, when the LEDs 60 are four, the four LEDs 60 may be respectively It is disposed at the four ends of the boss 52.
步驟七：請參見圖7，通過該間隙70注入封裝膠，且固化該封裝膠，以形成封裝層80。在本實施例中，該封裝膠填充整個收容空間13，且該封裝膠內分佈有螢光粉（圖未示）。Step 7: Referring to FIG. 7, the encapsulant is injected through the gap 70, and the encapsulant is cured to form the encapsulation layer 80. In this embodiment, the encapsulant fills the entire receiving space 13 and the phosphor is distributed in the encapsulant (not shown).
步驟八：請參見圖8，去除該模具10與該保護層20。由於設置有保護層20，因此，可防止在去除模具10的過程中該模具10粘住該反射層30，從而有效地保護該反射層30。Step 8: Referring to FIG. 8, the mold 10 and the protective layer 20 are removed. Since the protective layer 20 is provided, the mold 10 can be prevented from sticking to the reflective layer 30 during the process of removing the mold 10, thereby effectively protecting the reflective layer 30.
步驟九：請參見圖9與圖10，切割該基板50、封裝層80、折射層42以及反射層30，以形成兩個側光式發光二極體90。當然，當設置在該基板50上的發光二極體晶片60為多個時，則需根據發光二極體晶片60的設置位置進行切割。Step 9: Referring to FIG. 9 and FIG. 10, the substrate 50, the encapsulation layer 80, the refractive layer 42, and the reflective layer 30 are cut to form two edge-lit LEDs 90. Of course, when there are a plurality of light-emitting diode wafers 60 disposed on the substrate 50, it is necessary to perform cutting according to the installation position of the light-emitting diode wafer 60.
該發光二極體90發出的光部分被折射層42直接折射至側邊出射，部分透過該折射層42的光線再經過該反射層30反射，然後再通過折射層42折射至側邊出射，從而可提高該側光發光二極體90的出光效率。並且，該折射層42通過真過抽真空吸取的方式形成，其可形成薄且均勻的折射層42。The light portion emitted by the light-emitting diode 90 is directly refracted by the refractive layer 42 to the side, and the light partially transmitted through the refractive layer 42 is reflected by the reflective layer 30, and then refracted through the refractive layer 42 to the side, thereby The light extraction efficiency of the side light emitting diode 90 can be improved. Also, the refractive layer 42 is formed by vacuuming, which forms a thin and uniform refractive layer 42.
綜上所述，本發明符合發明專利要件，爰依法提出專利申請。惟，以上所述者僅為本發明之較佳實施例，舉凡熟悉本案技藝之人士，在爰依本發明精神所作之等效修飾或變化，皆應涵蓋於以下之申請專利範圍內。In summary, the present invention complies with the requirements of the invention patent and submits a patent application according to law. The above description is only the preferred embodiment of the present invention, and equivalent modifications or variations made by those skilled in the art will be included in the following claims.
90．．．發光二極體90. . . Light-emitting diode
10．．．模具10. . . Mold
11．．．平板部11. . . Flat section
12．．．凸出部12. . . Protrusion
121．．．開口121. . . Opening
13．．．收容空間13. . . Containing space
20．．．保護層20. . . The protective layer
30．．．反射層30. . . Reflective layer
40．．．折射膠帶40. . . Refractive tape
41．．．端部41. . . Ends
42．．．折射層42. . . Refraction layer
50．．．基板50. . . Substrate
51．．．上表面51. . . Upper surface
52．．．凸台52. . . Boss
60．．．發光二極體晶片60. . . Light-emitting diode chip
70．．．間隙70. . . gap
80．．．封裝層80. . . Encapsulation layer
圖1到圖10為本發明實施方式提供的側光式發光二極體的製作方法的剖面流程圖。FIG. 1 to FIG. 10 are cross-sectional flowcharts showing a method of fabricating an edge-lighted LED according to an embodiment of the present invention.
90．．．發光二極體90. . . Light-emitting diode
30．．．反射層30. . . Reflective layer
42．．．折射層42. . . Refraction layer
50．．．基板50. . . Substrate
60．．．發光二極體晶片60. . . Light-emitting diode chip
80．．．封裝層80. . . Encapsulation layer
Claims (10)
提供一個模具，該模具包括一凸出部，該凸出部內形成一個收容空間，該凸出部上開設有將收容空間與外部連通的一個開口；
在該模具的內表面上形成一反射層；
提供一個板狀的折射膠帶，該折射膠帶的端部延伸至位於該模具的凸出部的邊緣；
通過該凸出部的開口抽真空以吸取該折射膠帶，直至該折射膠帶吸附於該反射層上，以形成一折射層；
提供一個基板，該基板上設置有至少兩個發光二極體晶片，將形成有折射層的該模具設置在該基板上，該至少兩個發光二極體晶片收容於該收容空間內；
向該收容空間內注入封裝膠，且固化該封裝膠，以形成封裝層；
去除該模具；
切割該基板、封裝層、折射層以及反射層，以形成至少兩個側光式發光二極體。A method for manufacturing an edge-lit LED body, comprising:
Providing a mold, the mold includes a protrusion, the protrusion forming a receiving space therein, and the protrusion is provided with an opening for communicating the receiving space with the outside;
Forming a reflective layer on the inner surface of the mold;
Providing a plate-shaped refractive tape, the end of the refractive tape extending to an edge of the protrusion of the mold;
Vacuuming the opening of the protruding portion to absorb the refractive tape until the refractive tape is adsorbed on the reflective layer to form a refractive layer;
Providing a substrate on which at least two light emitting diode chips are disposed, the mold on which the refractive layer is formed is disposed on the substrate, and the at least two light emitting diode chips are received in the receiving space;
Injecting an encapsulant into the receiving space, and curing the encapsulant to form an encapsulation layer;
Removing the mold;
The substrate, the encapsulation layer, the refractive layer, and the reflective layer are cut to form at least two edge-lit LEDs.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210233404.6A CN103531698B (en) | 2012-07-06 | The manufacture method of side-lighting type light-emitting diode |
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| Publication Number | Publication Date |
|---|---|
| TW201403876A TW201403876A (en) | 2014-01-16 |
| TWI466337B true TWI466337B (en) | 2014-12-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101129292A TWI466337B (en) | 2012-07-06 | 2012-08-14 | Method of manufacturing side view led |
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| TW (1) | TWI466337B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200836381A (en) * | 2007-02-27 | 2008-09-01 | Towa Corp | Method of compression-molding light emitting elements |
| TW201032351A (en) * | 2009-02-24 | 2010-09-01 | Advanced Optoelectronic Tech | Side-emitting type semiconductor light emitting device package and manufacturing process thereof |
| TW201218453A (en) * | 2010-10-18 | 2012-05-01 | Advanced Optoelectronic Tech | LED package structure and the method of manufacturing the same |
-
2012
- 2012-08-14 TW TW101129292A patent/TWI466337B/en not_active IP Right Cessation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200836381A (en) * | 2007-02-27 | 2008-09-01 | Towa Corp | Method of compression-molding light emitting elements |
| TW201032351A (en) * | 2009-02-24 | 2010-09-01 | Advanced Optoelectronic Tech | Side-emitting type semiconductor light emitting device package and manufacturing process thereof |
| TW201218453A (en) * | 2010-10-18 | 2012-05-01 | Advanced Optoelectronic Tech | LED package structure and the method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103531698A (en) | 2014-01-22 |
| TW201403876A (en) | 2014-01-16 |
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