TWI466164B - - Google Patents
Info
- Publication number
- TWI466164B TWI466164B TW101145124A TW101145124A TWI466164B TW I466164 B TWI466164 B TW I466164B TW 101145124 A TW101145124 A TW 101145124A TW 101145124 A TW101145124 A TW 101145124A TW I466164 B TWI466164 B TW I466164B
- Authority
- TW
- Taiwan
Links
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210093485.4A CN103369810B (zh) | 2012-03-31 | 2012-03-31 | 一种等离子反应器 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201340165A TW201340165A (zh) | 2013-10-01 |
TWI466164B true TWI466164B (zh) | 2014-12-21 |
Family
ID=49370043
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW101145124A TW201340165A (zh) | 2012-03-31 | 2012-11-30 | 一種等離子反應器 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN103369810B (zh) |
TW (1) | TW201340165A (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112216585B (zh) * | 2019-07-11 | 2022-12-30 | 中微半导体设备(上海)股份有限公司 | 一种等离子体处理器及基座温度控制方法 |
CN113053715B (zh) * | 2019-12-27 | 2023-03-31 | 中微半导体设备(上海)股份有限公司 | 下电极组件、等离子体处理装置及其工作方法 |
CN116417319A (zh) * | 2021-12-30 | 2023-07-11 | 中微半导体设备(上海)股份有限公司 | 一种控温装置及相应的等离子体处理器 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW329535B (en) * | 1996-05-13 | 1998-04-11 | Applied Materials Inc | Plasma reactor with heated source of a polymerhardening precursor material |
US20020092618A1 (en) * | 1992-12-01 | 2002-07-18 | Applied Materials, Inc. | Parallel-plate electrode plasma reactor having an inductive antenna coupling power through a parallel plate electrode |
US20040027781A1 (en) * | 2002-08-12 | 2004-02-12 | Hiroji Hanawa | Low loss RF bias electrode for a plasma reactor with enhanced wafer edge RF coupling and highly efficient wafer cooling |
TW200504239A (en) * | 2003-04-17 | 2005-02-01 | Applied Materials Inc | Methodology and device to confine plasma and to reduce flow resistance in a plasma reactor |
US20100068887A1 (en) * | 2008-09-15 | 2010-03-18 | Micron Technology, Inc. | Plasma reactor with adjustable plasma electrodes and associated methods |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5660047A (en) * | 1995-09-15 | 1997-08-26 | American Air Liquide, Inc. | Refrigeration system and method for cooling a susceptor using a refrigeration system |
US6461801B1 (en) * | 1999-05-27 | 2002-10-08 | Matrix Integrated Systems, Inc. | Rapid heating and cooling of workpiece chucks |
US6992892B2 (en) * | 2003-09-26 | 2006-01-31 | Tokyo Electron Limited | Method and apparatus for efficient temperature control using a contact volume |
US20080299326A1 (en) * | 2007-05-30 | 2008-12-04 | Asm Japan K.K. | Plasma cvd apparatus having non-metal susceptor |
KR101047832B1 (ko) * | 2007-07-30 | 2011-07-08 | 가부시키가이샤 아드반테스트 | 전자 디바이스의 온도제어장치 및 온도제어방법 |
KR20120022841A (ko) * | 2009-03-31 | 2012-03-12 | 카나가와 아카데미 오브 사이언스 앤드 테크놀로지 | 액체 환류형 고속 유전자 증폭 장치 |
US8916793B2 (en) * | 2010-06-08 | 2014-12-23 | Applied Materials, Inc. | Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow |
CN101866826B (zh) * | 2010-04-29 | 2012-04-11 | 中微半导体设备(上海)有限公司 | 一种用于真空处理系统的流体传输装置 |
US8410393B2 (en) * | 2010-05-24 | 2013-04-02 | Lam Research Corporation | Apparatus and method for temperature control of a semiconductor substrate support |
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2012
- 2012-03-31 CN CN201210093485.4A patent/CN103369810B/zh active Active
- 2012-11-30 TW TW101145124A patent/TW201340165A/zh unknown
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020092618A1 (en) * | 1992-12-01 | 2002-07-18 | Applied Materials, Inc. | Parallel-plate electrode plasma reactor having an inductive antenna coupling power through a parallel plate electrode |
TW329535B (en) * | 1996-05-13 | 1998-04-11 | Applied Materials Inc | Plasma reactor with heated source of a polymerhardening precursor material |
US20040027781A1 (en) * | 2002-08-12 | 2004-02-12 | Hiroji Hanawa | Low loss RF bias electrode for a plasma reactor with enhanced wafer edge RF coupling and highly efficient wafer cooling |
TW200408000A (en) * | 2002-08-12 | 2004-05-16 | Applied Materials Inc | Low loss RF bias electrode for a plasma reactor with enhanced wafer edge RF coupling and highly efficient wafer cooling |
TW200504239A (en) * | 2003-04-17 | 2005-02-01 | Applied Materials Inc | Methodology and device to confine plasma and to reduce flow resistance in a plasma reactor |
US20100068887A1 (en) * | 2008-09-15 | 2010-03-18 | Micron Technology, Inc. | Plasma reactor with adjustable plasma electrodes and associated methods |
Also Published As
Publication number | Publication date |
---|---|
CN103369810B (zh) | 2016-02-10 |
CN103369810A (zh) | 2013-10-23 |
TW201340165A (zh) | 2013-10-01 |