TWI466164B - - Google Patents

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Publication number
TWI466164B
TWI466164B TW101145124A TW101145124A TWI466164B TW I466164 B TWI466164 B TW I466164B TW 101145124 A TW101145124 A TW 101145124A TW 101145124 A TW101145124 A TW 101145124A TW I466164 B TWI466164 B TW I466164B
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TW
Taiwan
Application number
TW101145124A
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TW201340165A (zh
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Publication of TW201340165A publication Critical patent/TW201340165A/zh
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Publication of TWI466164B publication Critical patent/TWI466164B/zh

Links

TW101145124A 2012-03-31 2012-11-30 一種等離子反應器 TW201340165A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210093485.4A CN103369810B (zh) 2012-03-31 2012-03-31 一种等离子反应器

Publications (2)

Publication Number Publication Date
TW201340165A TW201340165A (zh) 2013-10-01
TWI466164B true TWI466164B (zh) 2014-12-21

Family

ID=49370043

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101145124A TW201340165A (zh) 2012-03-31 2012-11-30 一種等離子反應器

Country Status (2)

Country Link
CN (1) CN103369810B (zh)
TW (1) TW201340165A (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112216585B (zh) * 2019-07-11 2022-12-30 中微半导体设备(上海)股份有限公司 一种等离子体处理器及基座温度控制方法
CN113053715B (zh) * 2019-12-27 2023-03-31 中微半导体设备(上海)股份有限公司 下电极组件、等离子体处理装置及其工作方法
CN116417319A (zh) * 2021-12-30 2023-07-11 中微半导体设备(上海)股份有限公司 一种控温装置及相应的等离子体处理器

Citations (5)

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Publication number Priority date Publication date Assignee Title
TW329535B (en) * 1996-05-13 1998-04-11 Applied Materials Inc Plasma reactor with heated source of a polymerhardening precursor material
US20020092618A1 (en) * 1992-12-01 2002-07-18 Applied Materials, Inc. Parallel-plate electrode plasma reactor having an inductive antenna coupling power through a parallel plate electrode
US20040027781A1 (en) * 2002-08-12 2004-02-12 Hiroji Hanawa Low loss RF bias electrode for a plasma reactor with enhanced wafer edge RF coupling and highly efficient wafer cooling
TW200504239A (en) * 2003-04-17 2005-02-01 Applied Materials Inc Methodology and device to confine plasma and to reduce flow resistance in a plasma reactor
US20100068887A1 (en) * 2008-09-15 2010-03-18 Micron Technology, Inc. Plasma reactor with adjustable plasma electrodes and associated methods

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US5660047A (en) * 1995-09-15 1997-08-26 American Air Liquide, Inc. Refrigeration system and method for cooling a susceptor using a refrigeration system
US6461801B1 (en) * 1999-05-27 2002-10-08 Matrix Integrated Systems, Inc. Rapid heating and cooling of workpiece chucks
US6992892B2 (en) * 2003-09-26 2006-01-31 Tokyo Electron Limited Method and apparatus for efficient temperature control using a contact volume
US20080299326A1 (en) * 2007-05-30 2008-12-04 Asm Japan K.K. Plasma cvd apparatus having non-metal susceptor
KR101047832B1 (ko) * 2007-07-30 2011-07-08 가부시키가이샤 아드반테스트 전자 디바이스의 온도제어장치 및 온도제어방법
KR20120022841A (ko) * 2009-03-31 2012-03-12 카나가와 아카데미 오브 사이언스 앤드 테크놀로지 액체 환류형 고속 유전자 증폭 장치
US8916793B2 (en) * 2010-06-08 2014-12-23 Applied Materials, Inc. Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow
CN101866826B (zh) * 2010-04-29 2012-04-11 中微半导体设备(上海)有限公司 一种用于真空处理系统的流体传输装置
US8410393B2 (en) * 2010-05-24 2013-04-02 Lam Research Corporation Apparatus and method for temperature control of a semiconductor substrate support

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020092618A1 (en) * 1992-12-01 2002-07-18 Applied Materials, Inc. Parallel-plate electrode plasma reactor having an inductive antenna coupling power through a parallel plate electrode
TW329535B (en) * 1996-05-13 1998-04-11 Applied Materials Inc Plasma reactor with heated source of a polymerhardening precursor material
US20040027781A1 (en) * 2002-08-12 2004-02-12 Hiroji Hanawa Low loss RF bias electrode for a plasma reactor with enhanced wafer edge RF coupling and highly efficient wafer cooling
TW200408000A (en) * 2002-08-12 2004-05-16 Applied Materials Inc Low loss RF bias electrode for a plasma reactor with enhanced wafer edge RF coupling and highly efficient wafer cooling
TW200504239A (en) * 2003-04-17 2005-02-01 Applied Materials Inc Methodology and device to confine plasma and to reduce flow resistance in a plasma reactor
US20100068887A1 (en) * 2008-09-15 2010-03-18 Micron Technology, Inc. Plasma reactor with adjustable plasma electrodes and associated methods

Also Published As

Publication number Publication date
CN103369810B (zh) 2016-02-10
CN103369810A (zh) 2013-10-23
TW201340165A (zh) 2013-10-01

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