TWI460759B - Method for manufacturing electron source of nanometer carbon tube - Google Patents

Method for manufacturing electron source of nanometer carbon tube Download PDF

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TWI460759B
TWI460759B TW098115312A TW98115312A TWI460759B TW I460759 B TWI460759 B TW I460759B TW 098115312 A TW098115312 A TW 098115312A TW 98115312 A TW98115312 A TW 98115312A TW I460759 B TWI460759 B TW I460759B
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carbon nanotube
carbon
field emission
emission source
temperature
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TW201041006A (en
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Nat Univ Chung Cheng
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奈米碳管場發射電子源之製造方法Nano carbon tube field emission electron source manufacturing method

本發明係有關一種奈米碳管場發射源之製造方法,特別是指一種製造多方向的電子發射路徑之奈米碳管發射源之製造方法。The present invention relates to a method for producing a carbon nanotube field emission source, and more particularly to a method for manufacturing a carbon nanotube emission source for producing a multi-directional electron emission path.

奈米碳管自90年代被發現以來,由於其具有奈米等級的尺寸與很大的表面積,且具有由六方碳原子點陣構成之特殊圓柱管結構,以及具有獨特的電、磁、光學特性和應用潛力,因此特別受到矚目。奈米碳管具有極小的尖端曲率半徑、極小尺寸、中空狀、高化學穩定度以及高機械強度,可提供多元化的應用,例如場發射源、儲氫的載具、室溫時的電晶體等,特別是高的管徑長度比與高化學穩定度,使其成為較具前瞻的場發射源,所以奈米碳管有著極佳的場發射特性,在較低電壓下所產生的電場可引發出大的電流密度,使其成為場發射陰極發射源的最佳材料。Since its discovery in the 1990s, carbon nanotubes have a special cylindrical structure composed of hexagonal carbon atom lattices due to their nanometer size and large surface area, as well as unique electrical, magnetic and optical properties. And the potential of the application, so it is particularly eye-catching. The carbon nanotubes have a very small tip radius of curvature, extremely small size, hollow shape, high chemical stability and high mechanical strength, and can provide a variety of applications, such as field emission sources, hydrogen storage vehicles, and crystals at room temperature. Etc., especially the high tube diameter ratio and high chemical stability, making it a more forward-looking field emission source, so the carbon nanotubes have excellent field emission characteristics, and the electric field generated at lower voltages can be It induces a large current density, making it the best material for a field emission cathode emitter.

目前製作奈米碳管陰極結構的方式主要有兩種方式,一種是直接利用化學氣相沉積法(CVD)法在玻璃基板上直接成長奈米碳管,但合成溫度超過基板的軟化溫度,同時對於大面積顯示器的應用亦受到限制;另一種方式是利用網版印刷的方式直接將奈米碳管漿料網印於基板上,與CVD法相比,網印法不僅成本較低,製作相對簡單,且可以大面積印刷生產。但是奈米碳管漿料在網印於基板後,在高溫燒結過程中,奈米碳管會與漿料中之有機載體(organic vehicle)反應而造成質量損失很大,奈米碳管的發射穩定性變差,另外利用網印法所製造之結構,發射源無方向性,因此需要進一步的活化,常見的方式為膠帶(adhesive taping)將平坦之碳管拉起而與基板垂直,但此方法會將膠帶中的化學物質殘留於陰極結構中而造成二次污染,且直接接觸也會破壞結構而影響場發射穩定性、壽命等。At present, there are two main ways to fabricate the cathode structure of the carbon nanotubes. One is to directly grow the carbon nanotubes on the glass substrate by chemical vapor deposition (CVD), but the synthesis temperature exceeds the softening temperature of the substrate. The application of large-area displays is also limited; the other way is to use the screen printing method to directly print the carbon nanotube paste on the substrate. Compared with the CVD method, the screen printing method is not only low in cost, but also relatively simple to manufacture. And can be printed on a large area. However, after the carbon nanotube slurry is screen printed on the substrate, during the high-temperature sintering process, the carbon nanotubes react with the organic vehicle in the slurry to cause a large mass loss, and the emission of the carbon nanotubes. The stability is deteriorated. In addition, the structure manufactured by the screen printing method has no directionality, so further activation is required. The common method is that the flat carbon tube is pulled up to be perpendicular to the substrate, but this is The method will cause the chemical substances in the tape to remain in the cathode structure to cause secondary pollution, and the direct contact will also damage the structure and affect the field emission stability and life.

有鑑於此,本發明遂提出一種奈米碳管場發射源之製造方法,以 改善存在於先前技術中之該些缺失。In view of the above, the present invention provides a method for manufacturing a carbon nanotube field emission source, Improve these shortcomings that existed in the prior art.

本發明的主要目的在於提供一種奈米碳管場發射源之製造方法,可省略後續的活化步驟,以簡化奈米碳管場發射源的製程,進而降低製造成本。The main object of the present invention is to provide a method for manufacturing a carbon nanotube field emission source, which can omit the subsequent activation step to simplify the process of the carbon nanotube field emission source, thereby reducing the manufacturing cost.

本發明之另一目的係提供一種可於較低溫下進行反應,且不需外加碳氫化合物氣體之奈米碳管場發射源之製造方法,以減低製造上的危險性。Another object of the present invention is to provide a method for producing a carbon nanotube field emission source which can be reacted at a relatively low temperature without the need for an external hydrocarbon gas to reduce the manufacturing risk.

本發明之再一目的係提供一種可應用於場發射顯示器或高效能發光元件上的奈米碳管場發射源之方法。It is yet another object of the present invention to provide a method of application to a carbon nanotube field emission source on a field emission display or high performance light emitting device.

為達到上述目的,本發明提供一種奈米碳管場發射源之製造方法,包含提供一基板;設置一電極層於該基板上;提供一混合物,其係由奈米碳管漿料及碳粉混和而成;以及利用網印將混合物塗佈於電極層上,並燒結以進行熱裂解反應而形成一刺蝟狀奈米碳簇結構之奈米碳管發射層。In order to achieve the above object, the present invention provides a method for fabricating a carbon nanotube field emission source, comprising: providing a substrate; disposing an electrode layer on the substrate; and providing a mixture mixed by a carbon nanotube slurry and carbon powder And coating the mixture on the electrode layer by screen printing and sintering to perform a thermal cracking reaction to form a carbon nanotube emitting layer of a thorn-shaped carbon nano-cluster structure.

另外,本發明製造的奈米碳管場發射源可應用於場發射顯示器或高效能發光元件上,以場發射顯示器為例,依照上述步驟獲得陰極板後,可組裝一場發射顯示器,其方法包含:提供一陰極板,其上表面設置一電極層,而電極層上具有刺蝟狀奈米碳簇結構之奈米碳管發射層;於陰極板上設置一空間支撐器;於空間支撐器的一頂緣設置一陽極板,使空間支撐器介於陰極板及陽極板之間;以及將陰極板、空間支撐器與陽極板置入於一真空腔體內,並進一步地對該陰極板、空間支撐器及陽極板進行封裝;依上述步驟即可完成場發射顯示器。In addition, the carbon nanotube field emission source manufactured by the invention can be applied to a field emission display or a high-performance light-emitting element. Taking a field emission display as an example, after obtaining the cathode plate according to the above steps, a field emission display can be assembled, and the method includes Providing a cathode plate having an electrode layer on an upper surface thereof, and a carbon nanotube emitting layer having a thorn-like carbon nano-cluster structure on the electrode layer; a space support on the cathode plate; and a space supporter An anode plate is disposed on the top edge, the space support is interposed between the cathode plate and the anode plate; and the cathode plate, the space supporter and the anode plate are placed in a vacuum chamber, and the cathode plate and the space are further supported The device and the anode plate are packaged; the field emission display can be completed according to the above steps.

為使對本發明的目的、特徵及其功能有進一步的了解,茲配合圖式詳細說明如下:In order to further understand the purpose, features and functions of the present invention, the drawings are described in detail as follows:

請參閱第一圖,為本發明之奈米碳管場發射源之製造方法之步驟 流程圖。請一併參閱第二圖,為本發明製造陰極板之結構剖視圖。於第一圖中,奈米碳管場發射源之步驟流程包含:步驟S10:提供一基板211,而基板211係為玻璃基板、塑膠基板、陶瓷基板或矽基板者。Please refer to the first figure for the steps of the method for manufacturing the carbon nanotube field emission source of the present invention. flow chart. Please refer to the second figure together for a cross-sectional view of the structure of the cathode plate of the present invention. In the first figure, the step of the carbon nanotube field emission source includes: Step S10: providing a substrate 211, and the substrate 211 is a glass substrate, a plastic substrate, a ceramic substrate or a germanium substrate.

步驟S11:設置一電極層212於基板211上,其中,電極層212的製作過程包含下列步驟,將一感光性導電漿料塗佈於此基板211的一表面上,利用光微影製程,將圖案作出,且燒結(sintering)後完成電極層212,微影製程包括經預烤後以光罩定義圖案,並作曝光和顯影。Step S11: An electrode layer 212 is disposed on the substrate 211. The manufacturing process of the electrode layer 212 includes the following steps: applying a photosensitive conductive paste to a surface of the substrate 211, and using a photolithography process, The pattern is made, and after the sintering, the electrode layer 212 is completed. The lithography process includes pre-baking and defining the pattern with a photomask, and exposing and developing.

步驟S12:提供一由奈米碳管漿料及碳粉混和而成之混合物,其中混合物係利用一三滾筒裝置將奈米碳管漿料與碳粉均勻混合而成,奈米碳管漿料係包含多壁奈米碳管(MWCNTs)、有機載體(Organic vehicle),例如松油醇(terpineol)或乙基纖維素(EC)、黏結劑,例如玻璃粉(frits)、導電粉末及分散劑,例如聚乙醇基酚醚類界面活性劑(Triton X-100)。本發明所選用的碳粉可由回收的碳粉閘中取得,而碳粉係包含磁性粒子、高分子及碳黑元素,碳粉於高溫的作用下高分子會裂解成碳原子與鐵、鈷及鎳等粒子反應生成奈米碳管。Step S12: providing a mixture of carbon nanotube slurry and carbon powder, wherein the mixture is uniformly mixed with carbon powder by using a three-roller device, and the carbon nanotube slurry is Including multi-walled carbon nanotubes (MWCNTs), organic vehicles, such as terpineol or ethyl cellulose (EC), binders, such as glass frits, conductive powders and dispersants, For example, a polyethanol phenol ether surfactant (Triton X-100). The carbon powder selected by the invention can be obtained from the recovered carbon powder gate, and the carbon powder comprises magnetic particles, a polymer and a carbon black element, and the carbon powder is cleaved into carbon atoms, iron and cobalt under the action of high temperature. The particles such as nickel react to form a carbon nanotube.

步驟S13:利用網版印刷方式將混合物塗佈於電極層212上。Step S13: The mixture is applied onto the electrode layer 212 by screen printing.

步驟S14:進行燒結以使混合物進行熱裂解反應而形成一刺蝟狀奈米碳簇結構之奈米碳管發射層213。Step S14: sintering is performed to cause the mixture to undergo a thermal cracking reaction to form a carbon nanotube emitting layer 213 of a thorn-shaped carbon nanocluster structure.

其中,於步驟S14中,混合物係藉由複數階段不同加熱恆溫溫度的升溫加熱步驟使其進行熱裂解反應,再降溫至室溫,其燒結步驟包含:對混合物進行加熱,使其升溫至第一階段的加熱溫度並持溫一段時間,使高分子進行第一階段除氫、去除不需要的揮發產物之反應。於本發明中,第一階段的加熱恆溫溫度較佳為在300~350℃之間,自室溫加熱至第一階段的加熱恆溫溫度的升溫速率較佳為每分鐘2~5℃。待完成第一階段的加熱溫度加熱後,接著再升溫至第二階段的加熱溫度並持溫一段時間,使高分子進行第二階段的熱裂解反應,此時碳粉與奈米碳管漿料中的高分子在熱裂解反應中所裂解出的碳當作碳源,可生長刺蝟狀奈米碳簇結構之奈米碳管發射層213,因此,不需 外加碳氫化合物氣體,以減低習知技術所製造奈米碳管場發射源的危險性。於本發明中,第二階段的加熱恆溫溫度較佳為在350~500℃之間,自室溫加熱至第二階段的加熱恆溫溫度的升溫速率較佳為每分鐘2~5℃。Wherein, in step S14, the mixture is subjected to a thermal cracking reaction by a heating step of heating at a constant temperature in a plurality of stages, and then the temperature is lowered to room temperature, and the sintering step comprises: heating the mixture to raise the temperature to the first The heating temperature of the stage is maintained for a period of time, so that the polymer undergoes the first stage of removing hydrogen and removing unwanted volatile products. In the present invention, the heating temperature of the first stage is preferably between 300 and 350 ° C, and the heating rate from the room temperature to the first stage is preferably 2 to 5 ° C per minute. After the heating temperature of the first stage is completed, the temperature is further increased to the heating temperature of the second stage and the temperature is maintained for a period of time, so that the polymer undergoes the second stage thermal cracking reaction, at this time, the carbon powder and the carbon nanotube slurry The carbon cleavage of the polymer in the thermal cracking reaction is used as a carbon source, and the carbon nanotube emitting layer 213 of the thorn-like carbon nano-cluster structure can be grown, so that it is not required Add hydrocarbon gas to reduce the risk of carbon nanotube field emission sources made by conventional technology. In the present invention, the heating temperature of the second stage is preferably between 350 and 500 ° C, and the heating rate from the room temperature to the second stage is preferably 2 to 5 ° C per minute.

由於碳粉之裂解溫度較低,當碳粉與奈米碳管漿料中的多壁奈米碳管進行裂解反應時,除了可降低多壁奈米碳管被氧化的機率,同時也可以合成出有利於場發射效果的碳簇材料,此材料的特點為刺蝟狀碳簇的結構可使其始終有一面朝向陽極,因此,可以減少後續的一些表面處理步驟,而解決現今製備及活化陰極結構程序複雜化的缺點,換句話說,即可得到高電流密度之場發射特性,此外,更可以達到縮短製作程序及製程時間而降低成本之優點,以及可有效應用於大面積製程製作場發射平面顯示器或高效能發光元件上。Due to the low cracking temperature of the carbon powder, when the carbon powder and the multi-walled carbon nanotubes in the carbon nanotube slurry are subjected to the cracking reaction, in addition to reducing the probability of oxidation of the multi-walled carbon nanotubes, it is also possible to synthesize A carbon cluster material which is advantageous for the field emission effect. The material is characterized in that the structure of the hedgehog-shaped carbon cluster can have one side facing the anode at all times, thereby reducing the subsequent surface treatment steps and solving the current preparation and activation of the cathode structure. The shortcomings of the complexity of the program, in other words, the field emission characteristics of high current density can be obtained, and the advantages of shortening the manufacturing process and the process time and reducing the cost can be achieved, and the emission plane can be effectively applied to the large-area process production site. On a display or high-performance light-emitting element.

此外,為使可獲得產量較多的刺蝟狀奈米碳簇,亦可將混合物進行熱裂解反應的步驟,其包含一通入氣體的步驟係先於熱裂解反應中升溫至第一階段的加熱溫度恆溫前,於通入氮氣前先通入空氣,待溫度升至第二階段的加熱溫度後改通入氮氣以置換反應室中的空氣,藉此,依照上述之製造步驟,在燒結的過程中,氣體、溫度及混合物能夠促使奈米碳管的生成,除了能夠保護原本的奈米碳管不受破壞外,亦同時可以成長出刺蝟狀奈米碳簇結構之奈米碳管發射層213,待燒結完成之後,即可完成一陰極板21。In addition, in order to obtain a high-yield locust-shaped nanocarbon cluster, the mixture may be subjected to a thermal cracking reaction step, which comprises a step of introducing a gas into the first stage of the heating temperature prior to the thermal cracking reaction. Before the constant temperature, the air is introduced before the nitrogen gas is introduced, and after the temperature is raised to the heating temperature of the second stage, the nitrogen gas is replaced to replace the air in the reaction chamber, thereby, in accordance with the above manufacturing steps, during the sintering process. The gas, temperature and mixture can promote the formation of the carbon nanotubes, in addition to protecting the original carbon nanotubes from damage, and also growing the carbon nanotube emitting layer 213 of the hedgehog-like carbon cluster structure. After the sintering is completed, a cathode plate 21 can be completed.

請參閱第三圖及第四圖,當經由上述燒結以使混合物進行熱裂解反應完的產物後,可使用掃描式電子顯微鏡(SEM)進行觀察本發明所指出之製造方法所製造出的刺蝟狀奈米碳簇結構之影像圖。由於奈米碳管是呈現刺蝟狀向四面八方發射出電子,因此,本發明所製造出刺蝟狀奈米碳簇結構係為多方向之電子發射路徑之奈米碳管發射層,所以不須經過活化的步驟,即可達到高電流密度、低起始電壓(turn-on voltage)之特性。Referring to the third and fourth figures, after the above-mentioned sintering to thermally decompose the mixture, the scanning electron microscope (SEM) can be used to observe the shape of the hedgehog produced by the manufacturing method indicated by the present invention. An image of the nanocarbon cluster structure. Since the carbon nanotubes emit electrons in all directions in a hedgehog shape, the structure of the thorn-shaped carbon nano-cluster structure produced by the present invention is a carbon nanotube emitting layer of a multi-directional electron emission path, so that it is not required to be activated. The high current density and low turn-on voltage characteristics can be achieved.

本發明製造的奈米碳管場發射源可應用於場發射顯示器或高效能發光元件上,以應用於場發射顯示器為例,依照第一圖之奈米碳管場發射源的製造流程步驟而獲得陰極板21後,可組裝一場發射顯示器,如第五圖所示,場發射顯示器50係包含:提供一基板211,其上表面設置有一電極層作為一陰極層212,而陰極層211上具有刺蝟狀奈米碳簇結構之奈米碳管發射層213,接著於陰極板21上設置複數空間支撐器(spacer)51,並於此些空間支撐器51的一頂緣設置一陽極板52,使空間支撐器51介於陰極板21及陽極板52之間,陽極板52係為透明導電玻璃(ITO-glass),其中,陽極板52下表面設置有一透明導電層作為陽極層53,且陽極層53對應於與陰極板21,並於陽極層53上網印一層螢光體(phosphor)54,螢光體54是可因應電路設計的需求,而為下述兩種型態:第一種是形成呈紅綠藍(簡稱RGB)三原色之螢光粉,且分別獨立設置,第二種是將RGB三原色同時形成在單一螢光體54上。The nanocarbon tube field emission source manufactured by the invention can be applied to a field emission display or a high-performance light-emitting element, and is applied to a field emission display as an example, according to the manufacturing process steps of the nano carbon tube field emission source of the first figure. After obtaining the cathode plate 21, a field emission display can be assembled. As shown in FIG. 5, the field emission display 50 includes: a substrate 211 provided with an electrode layer as a cathode layer 212 on the upper surface and a cathode layer 211 on the cathode layer 211. a carbon nanotube emitting layer 213 of a hedgehog-like carbon cluster structure, followed by a plurality of space spacers 51 disposed on the cathode plate 21, and an anode plate 52 disposed on a top edge of the space supports 51, The space supporter 51 is interposed between the cathode plate 21 and the anode plate 52. The anode plate 52 is made of transparent conductive glass (ITO-glass). The lower surface of the anode plate 52 is provided with a transparent conductive layer as the anode layer 53 and the anode. The layer 53 corresponds to the cathode plate 21, and a phosphor 54 is printed on the anode layer 53. The phosphor 54 is responsive to the design of the circuit, and is of the following two types: the first type is Formed in red, green and blue (abbreviated as RGB) The primary color phosphor, and are provided independently, while the second is the RGB colors formed on a single phosphor 54.

請一併參閱第五圖及第六圖,第六圖為本發明測試場發射顯示器之示意圖,將陰極板21、空間支撐器51及陽極板52置入於一真空腔體61內,其中,可利用幫浦將腔體的壓力抽至10-5Torr以下,並進一步地對陰極板21、空間支撐器52及陽極板53進行封裝,即可完成場效發射顯示器50。本發明可利用一電壓供應裝置62(例如最高可提供1100V)提供一電壓於陰極板21及陽極板52之間,用以加速自陰極板21上的奈米碳管發射層213以多方向發射出電子並撞擊到陽極板52的螢光體54上,則螢光體54即會激發出可見光源。Please refer to the fifth and sixth figures. The sixth figure is a schematic diagram of the test field emission display of the present invention. The cathode plate 21, the space supporter 51 and the anode plate 52 are placed in a vacuum chamber 61, wherein The field effect emission display 50 can be completed by pumping the pressure of the cavity to below 10 - 5 Torr and further encapsulating the cathode plate 21, the space support 52, and the anode plate 53. The present invention can utilize a voltage supply device 62 (e.g., up to 1100V) to provide a voltage between the cathode plate 21 and the anode plate 52 for accelerating the emission of the carbon nanotube emission layer 213 from the cathode plate 21 in multiple directions. Upon exiting the electrons and impinging on the phosphor 54 of the anode plate 52, the phosphor 54 will excite a source of visible light.

以上所述之實施例僅係為說明本發明之技術思想及特點,其目的在使熟習此項技藝之人士能夠瞭解本發明之內容並據以實施,當不能以之限定本發明之專利範圍,即大凡依本發明所揭示之精神所作之均等變化或修飾,仍應涵蓋在本發明之專利範圍內。The embodiments described above are merely illustrative of the technical spirit and the features of the present invention, and the objects of the present invention can be understood by those skilled in the art, and the scope of the present invention cannot be limited thereto. That is, the equivalent variations or modifications made by the spirit of the present invention should still be included in the scope of the present invention.

21...陰極板twenty one. . . Cathode plate

211...基板211. . . Substrate

212...陰極層212. . . Cathode layer

213...奈米碳管發射層213. . . Carbon nanotube emission layer

50...場發射顯示器50. . . Field emission display

51...空間支撐器51. . . Space support

52...陽極板52. . . Anode plate

53...陽極層53. . . Anode layer

54...螢光體54. . . Phosphor

61...真空腔體61. . . Vacuum chamber

62...電壓供應裝置62. . . Voltage supply device

第一圖為本發明之奈米碳管場發射源之製造方法之步驟流程圖。The first figure is a flow chart of the steps of the method for manufacturing the carbon nanotube field emission source of the present invention.

第二圖為本發明製造陰極板之結構剖視圖。The second figure is a cross-sectional view showing the structure of a cathode plate manufactured by the present invention.

第三圖為本發明使用掃描式電子顯微鏡(SEM)進行觀察刺蝟狀奈米碳簇結構之影像圖。The third figure is an image view of the structure of the hedgehog-like carbon clusters observed by a scanning electron microscope (SEM) of the present invention.

第四圖為本發明使用掃描式電子顯微鏡(SEM)進行觀察刺蝟狀奈米碳簇結構之影像圖。The fourth figure is an image view of the structure of the hedgehog-like carbon clusters observed by a scanning electron microscope (SEM) of the present invention.

第五圖為本發明應用於場發射顯示器之剖視圖。Figure 5 is a cross-sectional view of the present invention applied to a field emission display.

第六圖為本發明測試場發射顯示器之示意圖。The sixth figure is a schematic diagram of the test field emission display of the present invention.

Claims (12)

一種奈米碳管場發射源之製造方法,其應用於場發射顯示器或高效能發光元件上,該方法包含:提供一基板;設置一電極層於基板上;提供一混合物,其係由奈米碳管漿料及碳粉混和而成,該奈米碳管漿料係包含多壁奈米碳管、有機載體、黏結劑、導電粉末及分散劑,該碳粉係包含磁性粒子、高分子及碳黑元素;以及利用網印將該混合物塗佈於該電極層上,並燒結以進行熱裂解反應而形成一刺蝟狀奈米碳簇結構之奈米碳管發射層。 A method for manufacturing a carbon nanotube field emission source, which is applied to a field emission display or a high-performance light-emitting element, the method comprising: providing a substrate; disposing an electrode layer on the substrate; providing a mixture consisting of nano carbon The tube slurry and the carbon powder are mixed, and the carbon nanotube slurry comprises a multi-walled carbon nanotube, an organic carrier, a binder, a conductive powder and a dispersing agent, and the carbon powder comprises magnetic particles, a polymer and a carbon. The black element; and the mixture is applied to the electrode layer by screen printing, and sintered to perform a thermal cracking reaction to form a carbon nanotube emitting layer of a thorn-like carbon nano-cluster structure. 如申請專利範圍第1項所述之奈米碳管場發射源之製造方法,其中該混合物係藉由複數階段不同加熱恆溫溫度的升溫加熱步驟使其進行該熱裂解反應,再降溫至室溫。 The method for producing a carbon nanotube field emission source according to claim 1, wherein the mixture is subjected to the thermal cracking reaction by a heating step of a plurality of different heating and constant temperature, and then the temperature is lowered to room temperature. . 如申請專利範圍第2項所述之奈米碳管場發射源之製造方法,其中該複數階段的升溫加熱步驟,至少包含一第一階段的加熱恆溫溫度在300~350℃之間及一第二階段的加熱恆溫溫度在350~500℃之間的加熱階段。 The method for manufacturing a carbon nanotube field emission source according to claim 2, wherein the heating step of the plurality of stages includes at least a first stage heating temperature between 300 and 350 ° C and a first The two-stage heating constant temperature is in the heating phase between 350 and 500 °C. 如申請專利範圍第3項所述之奈米碳管場發射源之製造方法,其中自室溫加熱至該第一階段的加熱恆溫溫度的升溫速率為每分鐘2~5℃。 The method for producing a carbon nanotube field emission source according to claim 3, wherein the heating rate from the room temperature to the heating temperature of the first stage is 2 to 5 ° C per minute. 如申請專利範圍第3項所述之奈米碳管場發射源之製造方法,其中自室溫加熱至該第二階段的加熱恆溫溫度的升溫速率為每分鐘2~5℃。 The method for producing a carbon nanotube field emission source according to claim 3, wherein the heating rate from the room temperature to the heating temperature of the second stage is 2 to 5 ° C per minute. 如申請專利範圍第1項所述之奈米碳管場發射源之製造方法,其中該混合物進行該熱裂解反應的步驟進一步包含一通入氣體的步驟。 The method for producing a carbon nanotube field emission source according to claim 1, wherein the step of performing the thermal cracking reaction of the mixture further comprises a step of introducing a gas. 如申請專利範圍第6項所述之奈米碳管場發射源之製造方法,其中該氣體係為氮氣。 The method for producing a carbon nanotube field emission source according to claim 6, wherein the gas system is nitrogen. 如申請專利範圍第7項所述之奈米碳管場發射源之製造方法,其中 該通入氣體的步驟係為升溫至該第一階段的加熱溫度前先通入空氣,待溫度升至該第二階段的加熱溫度後改通入該氮氣。 A method for manufacturing a carbon nanotube field emission source as described in claim 7 of the patent application, wherein The step of introducing the gas is to introduce air before the temperature is raised to the heating temperature of the first stage, and the nitrogen is changed after the temperature is raised to the heating temperature of the second stage. 如申請專利範圍第1項所述之奈米碳管場發射源之製造方法,其中該基板係為玻璃基板、塑膠基板、陶瓷基板或矽基板者。 The method for producing a carbon nanotube field emission source according to claim 1, wherein the substrate is a glass substrate, a plastic substrate, a ceramic substrate or a germanium substrate. 如申請專利範圍第1項所述之奈米碳管場發射源之製造方法,其中該混合物係利用一三滾筒裝置將該奈米碳管漿料與該碳粉均勻混合而成。 The method for producing a carbon nanotube field emission source according to claim 1, wherein the mixture is obtained by uniformly mixing the carbon nanotube slurry with the carbon powder by using a three-roller device. 如申請專利範圍第1項所述之奈米碳管場發射源之製造方法,其中該碳粉與奈米碳管漿料中的高分子在熱裂解反應中所裂解出的碳當作碳源,可生長該刺蝟狀奈米碳簇結構。 The method for manufacturing a carbon nanotube field emission source according to claim 1, wherein the carbon in the thermal cracking reaction of the carbon powder and the carbon nanotube slurry is used as a carbon source. The hedgehog-like carbon cluster structure can be grown. 如申請專利範圍第1項所述之奈米碳管場發射源之製造方法,其中該刺蝟狀奈米碳簇結構係為多方向之電子發射路徑之奈米碳管發射層。 The method for producing a carbon nanotube field emission source according to claim 1, wherein the thorn-shaped carbon nano-cluster structure is a carbon nanotube emission layer of a multi-directional electron emission path.
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