TWI220265B - Method of growing isomeric carbon emitters onto triode structure of field emission display - Google Patents

Abstract

The present invention is related to a kind of manufacturing process for triode structure of field emission display, and thick film technique is used to conduct the manufacturing. The triode structure contains a bottom electrode layer containing metal catalyst. Because of the metal catalyst, isomeric carbon field emission electron source can be grown at low temperature on top of the bottom electrode layer through the use of CVD process. Metal catalyst layer is formed on top of bottom electrode layer, and is not mixed with the conducting slurry. Metal catalyst layer is used to assist in growth of nanometer carbon tubes during the following CVD process. The combination of thick film technique with low-temperature CVD process provides a low-cost manufacturing technique for manufacturing the large-area field emission display having isomeric carbon field emission electron source.

Description

1220265 __Case No. 91133488 The main month and day Article V. Description of the invention (1) 'Technical field to which the invention belongs] The present invention relates to a field emission display (FED). In particular, it relates to a method for growing carbon isomers field emission electron sources on a triode structure field emission display. [Previous Technology] Field emission displays have been widely developed in recent years to make large-sized flat panel displays. The field emission display uses a cold cathode emitter tip as a source of electrons' to replace the hot cathode electron gun in a traditional cathode ray tube (ca t h o d e r a y t ube, C R T). When the field emission display is placed in an electric field, the tip of the cold cathode emitter (t 丨 p) is aimed at the anode substrate coated with a fluorescent powder in the field emission display, and emits an electron beam, which hits the phosphor. )on. FIG. 1 is a schematic structural diagram of a conventional tripolar structure carbon nanotube (CNT) field emission display. The electrons on the cold cathode emitter tip 103 on the cathode glass substrate 101 are extracted by an electric field. The field emission electrons leaving the cathode plate in a vacuum environment are attracted by the acceleration of the positive voltage on the anode glass substrate 104, and strike the anode 1 〇5Fluorescent powder 106 and emits light. The carbon nanotube cold cathode emitter tip 103 is formed in the gap of the dielectric layer 107, wherein the dielectric layer 107 is a cold cathode layer 102 formed on a glass substrate 101. Openings are formed at the junction of the cold cathode layer 102 and the gate layer 108 as an emergence of electrons. M 2 A to FIG. 2 D illustrate the fabrication of a cathode plate for a nano-carbon tube field emission display.

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I m Page 5 1220265 Case No. 9113348S V. Description of the invention (2) Method of operation. As shown in FIG. 2A, a conductive paste is first coated and patterned on a transparent substrate 201 to form a cathode electrode layer 2 02, and then to a transparent substrate 2 Om and the cathode electrode layer 202 are overly coated with a dielectric material 203 that can be etched, as shown in FIG. 2B. Then, a layer of conductive gate material 204 is coated on the dielectric layer 203, and a gate pattern is defined by a patterned photoresist layer 205, as shown in FIG. Sand blasting and fired & air

Remove the gate and dielectric materials. Finally, the screen printing process (screen

Printing Pr0cess) The nano carbon tube layer 206 is coated on the cathode electrode layer 200, as shown in FIG. 2D. The field emission display 20 shown in FIG. 2 is made by screen printing technology, and the pre-adjusted paste is scraped through a patterned screen using a doctor blade, so that the pattern is printed on a glass substrate. The layers stack the patterns. Because this method is limited to the mesh and knot size of the stencil, the analysis of the printed pattern cannot be improved ', resulting in the need to provide a higher field emission starting voltage in order to achieve the required brightness of the display. In addition, it will be affected by the uneven tension of the screen, causing the film

Poor uniformity of thickness and distortion of the printed pattern results in the disadvantages of uneven electric field intensity distribution and difficult alignment in subsequent processes. In order to overcome the shortcomings of traditional nano carbon field emission display and improve it. There are other methods for making cathode plates using thick film screen printing technology. One of them is to use conductive paste and etchable dielectric materials to combine yellow, photo lithography and etching methods. Cathode plate of Mi-carbon Lu field emission display.

Page 6 1220265-Case report 91133488 Rev. V. Description of the invention (3) " Method for shooting cathode plate of display. As shown in FIG. 3A, a conductive paste is first coated and patterned on a transparent substrate 301 to form a negative electrode layer go ?, and then a comprehensive coating is applied over the transparent substrate 301 and the negative electrode layer 302. The etched dielectric material 3 0 3 is shown in FIG. 3 B. Then, a layer of conductive gate material 304 is coated on the dielectric layer 303, and patterned and sintered in a yellow light process to form a gate electrode layer 304, as shown in FIG. 3C. The gate pattern is used as a protective film to etch away a portion of the dielectric material that is not covered by the gate pattern, as shown in Figure 3D. Finally, a nano-carbon tube emitting layer 3 05 is filled on the cathode layer 3 2 2 to form a cathode plate structure, as shown in FIG. 3E. As shown in FIG. 3D, the process of the nano-carbon tube emission layer 305 can be made with yellow light, and a layer of photosensitive nano-carbon tube slurry is coated on the surface of the cathode plate. Meter carbon tube emission layer 305 pattern. Then, it was sintered in a nitrogen atmosphere. The fabrication of the nano-carbon tube emission layer 3 05 can also be performed by electro-rical deposition. The steps include comprehensively coating a positive or negative layer on the cathode electrode layer 3 02 and the gate electrode layer 3 04. Positive photoresist (positive or negative photoresist), as shown in FIG. 3D, and a photomask is used to define the photoresist pattern in a registration exposure manner. After a photoresist pattern is formed on the gate electrode layer 304, a nano carbon tube slurry is coated on the cathode electrode layer 30 by an electrically depositing method, and under a nitrogen atmosphere, the Sintered in a furnace to form a nano-carbon tube emission layer 3 05. As mentioned above, the manufacturing process of the carbon nanotube emission layer on the triode structure of the carbon nanotube field emission display requires strict alignment between the gate opening and the carbon nanotube pattern, making its process cost and process The difficulty is high. Yin Yue

1220265

There are still many technical obstacles to the mass production of nano carbon tube field emission displays, which need to be overcome urgently. Compared with other technologies, the chemical vapor deposition (CVD) process using catalytic metals has more advantages and has been proven to be a 'cost of manufacturing process when manufacturing large area carbon nanotubes' Lower. However, the reaction temperature of temperature-controlled CVD is usually as high as 70-1000 degrees Celsius, far exceeding the melting point of 60 (degrees) for glass substrates of general flat panel displays. At present, there are literatures and patents that point out the feasibility of emitting electron sources in a low-temperature growth field. At 550 ° C, a nickel catalyst (d catalyst) is coated on a soda-lime glass substrate using C2H2 gas CVD. . Therefore, it is extremely necessary to develop a set of integrated thick-film triode structure process with low-temperature CVD technology to produce a carbon nanotube field emission display with energy production. [Summary of the Invention] The present invention overcomes the shortcomings of the conventional field emission display manufacturing process described above. Its main purpose is to provide a manufacturing method for growing a field emission electron source of carbon isomers on a tripolar field emission display with low process cost. The main principle is to use a thick film technology to make a tripolar structure field emission display ^ A CVD process is used to grow a carbon outfield on a tripolar structure field emission display and then emit an electron source. The first purpose of Fu Chuming ’s unclear is to provide one or two peaches. & ^ ^ Cathode electrode layer with a one-pole structure, vermiculite and ss. Therefore, the source can be CVD process. Grow on this tripolar structure. According to the present invention :: The conductive metal powder is prepared into a conductive metal paste, and after the amine: $, then the thick film production process will be guided IUJ ^ i IwΐΤΐιΓπΙιuIjP tKfnr _ f / 1 丨 wili ·.,》 _-_

Page 8 Mix the metal catalyst with conductive metal powder to form the negative electrode sound. 1220265 Amendment No. 911334 V. Description of the invention (5) As a rule, the material is formed into a negative electrode layer on a transparent substrate. Then, a dielectric layer and a gate electrode layer are stacked on the cathode electrode, and a tripolar structure is formed after patterning. Since the negative electrode layer contains a metal catalyst, the carbon isomer field emission electron source can easily grow on the tripolar structure. Another object of the invention is to provide a metal 2 layer in a triode structure to make the carbon isomer field emission electron source of the field emission display easy to form a metal catalyst layer on the cathode electrode layer, instead of the #; ϊ ί 阴 After the metal paste is mixed, a negative electrode layer is formed on a transparent substrate, and then the metal catalyst layer and the negative electrode layer, and the square soil dielectric layer and the gate electrode layer of the transparent substrate are formed. The dielectric layer and the closed electrode layer are patterned into a two-pole structure. Finally, the cvd process was used to grow a carbon isomer field emission electron source on the metal catalyst layer. According to the present invention, the formation of the tripolar structure can be made by methods such as screen printing technology, dry sand method and thick film yellow light process. And the cathode layer method is used to make it. Materials that can be used for metal catalysts: transition metals such as nickel and nickel (N: ι). The carbon isomer field emission electron source can be made of materials including nano carbon tubes, carbon fibers (carbonite, graphite nano-fiber). R) Graphite nano-fibers with the following drawings and details of the examples The description and patent enclose the above and other objects and advantages of the present invention in detail. [Embodiment] FIG. 4 illustrates in detail the process steps of using a thick film process with CVD technology for a nanometer display in the first embodiment of the present invention. == Page 9 1220265 Amends "j. 6) FIG. 4B illustrates the formation of a cathode electrode layer 402 on the transparent substrate 401 as shown in the 'prepare-transparent substrate 401'. A conductive paste is deposited on the conductive paste with ‘: system = 5: = 401.极 层 402。 Polar layer 402. Huang Guangzhi's anodized electricity is formed after annealing and sintering. The first I includes pre-baking and a mask definition pattern, and * sections. Step a Γ ο Figure 4β illustrates the pattern of the cathode electrode layer M2 after development = :: Construction is not intended. The negative electrode layer technique can also use screen printing technology to make its conductive material ::: centered,: electrode layer 4 ° 2 ::-catalyst 疋: nickel or cobalt. As shown in FIG. 4C, the dielectric layer 4; and the cathode electrode layer 402 are above. The gate layer of the dielectric layer 403 is formed on the substrate 410 by a sandblasting method or a yellow light process. Product map m layer A schematic cross-sectional structure of this gate structure. β month As shown in FIG. 4D, the cathode electrode layer 402 includes long lines of electrodes. The dielectric layer 403 includes a plurality of dielectric materials. Two = H = long-line electrodes. The gate electrode layer 404 includes a plurality of elongated electrodes. Each of the long-line electrode positions of the gate electrode layer 404 is above the long-line electrode 403 and is connected to the negative electrode layer 4. Electrical layer = fork. The inter-electrode layer 404 and the dielectric layer 403: J = the long-line electrode of the layer 402 forms a circular hole opening at the intersection (ci cathode S / circular cavities). Nano carbon tube = CVD technology is filled in this round hole opening. ο The second embodiment of the carbon nanotube field of the second embodiment of the low-temperature fermentation is dry. Page 10 120265 Τ ′ —— 锐 91133488-Main month a_Amended 5. Description of the invention (7):-Production process. Referring to FIG. 5A, as in the first embodiment, first, a transparent substrate 501 is aligned. FIG. 5B illustrates the formation of a cathode 502 on a transparent substrate 501. > As shown in FIG. 5C, a metal catalyst is formed over the cathode electrode layer 502, 506 to assist the length of the nano-carbon tube in the post-CVD process. to make. In the second embodiment, first, a layer of conductive paste is deposited on the transparent substrate 501. After the conductive paste is patterned in a yellow light process, and after annealing and sintering, the negative electrode layer 502 is formed. Fig. 53 is a schematic diagram showing a solid cross-sectional structure of the pattern of the cathode electrode layer 50 after development. The metal catalyst layer 506 is formed on the cathode layer instead of mixing the metal catalyst with the conductive paste. As shown in FIG. 5C, the metal catalyst layer 506 is used to assist the growth of the carbon nanotubes in the post-CVD process. The material of the metal catalyst can be a transition metal (such as iron, cobalt, nickel, etc.). FIG. 5D illustrates a schematic cross-sectional structure of the gate structure. Second Embodiment The following process is exactly the same as the first embodiment. As shown in FIG. 5D, a dielectric layer 503 is deposited above the cathode electrode layer 502 and the metal catalyst layer 506 of the sacrificial substrate 501, and a gate electrode layer 504 is further deposited above the dielectric layer 503. Then the gate structure is made by sandblasting or yellow light process. As shown in FIG. 5E, the dielectric material of the second embodiment can use the same dielectric material as the first embodiment, and the nano-carbon tube layer 505 is grown on the metal catalyst layer 506 by CVD technology. Fig. 6 illustrates a SEM image of a carbon isomer field emission electron source produced according to the process of the present invention. The gate structure is made by sandblasting, and the carbon isomer field emission electron source layer is deposited by CVD technology. Figures 6A and 6B illustrate the gate holes (gated-electrode leakage) after the carbon nanotubes are formed on the cathode at 500 and 5000 magnifications, respectively.

IM Page 11 1220265 Case No. 911 Milk / | Rib 5. Explanation of the invention (8) Schematic cross-section. According to the present invention, Tai + Lei Qi Ba Ba Fu ... card carbon tube layer 405 or 505 is made by CVD technology on the total lambda gan of "with & Shu catalyst layer 506. Contains metal catalyst or metal The yinlei fork master of the catalyst layer 506 and the seven shield master…. The polar layer 402 uses thick film technology, such as screen printing technology or thick film yellow light. 从 从, | 4 and Shizheng ΛΑ The formation of the tripolar structure also includes sandblasting .: The source of electrons emitted by the Ling structure field can be a nano carbon tube, and the carbon fiber catalyst layer is thick. F: In a metal-containing catalyst or metal slab, w φ dazzle. Shangzhu I was used as a bipolar structure. Then a CVD process was used to connect the cathode electrode layer or the total catalyst layer ^ s ^ ^ ^ ^ catalyst layer to make a carbon isomer field emission electron source layer. Thick film technology combined with CVD劁 丁 f ^ λ * ί * ίΛ ^ 4J. ^ A technology for a low process cost to use a gas as a large-area ~ emission display. However, the above mentioned, 椹 & The government is only a preferred embodiment of the present invention, and when + this is used as a limitation, the present invention will be able to make equal changes and revisions of the scope of benefits: G j :: Shen Inside. Zhongbai should still belong to the present invention. The patent covers 1220265, and the case number is 91133488. The revised diagram simply explains 303 dielectric material, dielectric layer 3 0 5 nanometer tube break emission layer 4 0 1 transparent substrate 4 0 3 dielectric layer 40. 5 nanometer carbon tube layer 5 0 1 transparent substrate 5 0 3 dielectric layer 505 nanometer carbon tube layer 304 gate material, gate electrode layer 4 0 2 cathode electrode layer 404 gate electrode layer 5 0 2 cathode electrode layer 504 gate electrode Layer 506 metal catalyst layer

Page 14

Claims (1)

1220265 _—Case No. 91133488 __ Year ^ Month Chromium _ Sixth, the scope of patent application 1 · A method for manufacturing a triode structure of a field emission display, including the following steps in order: (a) preparing a transparent substrate; (b) ) Coating a conductive paste on the transparent substrate and patterning the conductive paste layer to form a negative electrode layer, the conductive paste contains a metal catalyst; (c) using a sandblasting method or a thick film yellow light process, A gate structure is formed on the cathode electrode layer and above the transparent substrate; (d) A carbon isomer field emission electron source is fabricated above the cathode electrode layer. 02. Field as described in item 1 of the scope of patent application The manufacturing method of the triode structure of the emission display, wherein the metal catalyst contained in the conductive paste layer in the step (b) is a transition metal. 3. The manufacturing method of the triode structure of the field emission display as described in item 丨 of the patent application, wherein the metal catalyst contained in the conductive paste layer in step (b) is made of iron, cobalt or Made of nickel. 4. The manufacturing method of the triode structure of the field emission display according to item 1 of the scope of patent application, in this step (b), the patterning of the cathode electrode layer is completed by screen printing technology or thick film yellow light process. . 5. The manufacturing method of the triode structure of the field emission display according to item 1 of the scope of patent application, the manufacturing method includes screen printing technology, sandblasting method and thick yellow light process. 6. The manufacturing method of the triode structure of the field emission display as described in item 1 of the Shenjing patent scope, wherein the carbon isomer field emission electron source is made of nanometer 1220265 -911 ^ 4 «« Six, scope of patent application Carbon tube 'comes from carbon fiber or graphite nanofiber. 7. —Method for manufacturing a three-electrode structure of a field emission display, which includes the following steps in order to prepare a transparent substrate; =: — A layer of conductive material is formed on the transparent substrate and the conductive paste layer is patterned to form Cathode electrode layer; (c) forming a metal catalyst layer over the cathode electrode layer; (d) forming a gate structure over the cathode electrode layer and the transparent substrate by a sandblasting method or a thick film yellow light process (E) a method for fabricating a tripolar structure of a field emission display as described in item 7 of the patent application scope, for producing a carbon isomer field emission electron source above the cathode electrode layer, wherein in step (c) The metal catalyst is a transition metal. 9. The manufacturing method of the triode structure of the field emission display as described in item 7 of Shenqiao's patent scope, wherein in step (c) the metal catalyst is made of iron, cobalt or nickel. I 0 · The method for manufacturing the triode structure of the field emission display as described in item 7 of the scope of patent application, in this step (b), the patterning of the cathode electrode layer is performed by screen printing technology or thick film yellow light process. carry out. II. The manufacturing method of the triode structure of the field emission display as described in item 7 of the scope of patent application, the manufacturing method includes screen printing technology, sandblasting method and thick film yellow light process. 1 2 · Triode structure of field emission display as described in item 7 of the scope of patent application 1220265 Case No. 91133488 Amendment 6. The method for making patent applications, wherein the carbon isomer field emission electron source is from a carbon nanotube, carbon fiber or graphite nanofiber. I ·· page 17