TWI460534B - Double exposure mask structure and exposure development method - Google Patents
Double exposure mask structure and exposure development method Download PDFInfo
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Description
本發明係有關一種光罩結構及曝光顯影方法，尤指一種雙重曝光的光罩結構以及曝光顯影的方法。
The present invention relates to a reticle structure and an exposure developing method, and more particularly to a double exposure reticle structure and a method of exposure development.
半導體的微細化長久以來一直依循摩爾定律(Moore's Law)發展，亦即單片晶圓上電晶體和電阻的數量將以每年增加一倍的速度成長，這個理論在過去三十年來相當適用，而到目前為止，已修改為每18個月增加一倍的速度。然而，半導體製程主要利用顯影蝕刻的方式進行，但光線的繞射問題，在製程尺寸越來越小的情況下，已逐漸顯現出嚴重的問題。
為了繼續使相同尺寸大小的晶圓塞進更多的電晶體，現階段已開始研發極端紫外光源（Extreme Ultraviolet, EUV）以及雙重曝光（double exposure）等技術以進一步的降低線寬，縮小電晶體的體積。而由於EUV的技術成熟度仍然不足，因此雙重曝光的技術便成為目前縮小半導體尺寸最主要的技術之一。雙重曝光主要於第一次曝光後，以位移的方式調整曝光的位置，以進行第二次曝光，而可避免因光線繞射產生曝光位置不正確的問題。其中如美國專利公開第2008153299號之「Semiconductor Device And Method For Forming A Pattern In The Same With Double Exposure Technology」，其係揭露了一種雙重曝光的技術，其係揭露了一種有關於動態隨機存取記憶體（DRAM）相關的雙重曝光技術，並且有效的提高良率。
然而，請配合參閱「圖1A」及「圖1B」所示，其係揭露一種雙重曝光的結構以及蝕刻結果示意圖，該結構包含有一基底1、複數形成於該基底1上且平行一第一方向的第一光罩2、複數形成於該基底1上且垂直該第一方向的第二光罩3，以及複數平行該第一方向而形成於該基底1上的邊緣輔助光罩4，該第一光罩2與該第二光罩3交疊而形成複數重疊點5，該些重疊點5係依據蝕刻製程為正光阻或負光阻製程而使得位於該些重疊點5位置的基底1可為孔洞或柱體，於「圖1B」中，其係為對應於「圖1A」中的虛線圈繞位置，假設該曝光是利用負光阻顯影的方式，而使得該些重疊點5的位置形成孔洞6。由於位於邊緣的該些重疊點5無法利用相鄰的光罩有足夠的聚焦深度（Depth Of Focus, DOF）以形成孔洞6，因此必須透過該些邊緣輔助光罩4設置於該第一光罩2的邊緣，以輔助相鄰於該邊緣輔助光罩4並對應於該些重疊點5位置的基底1，成形為孔洞6。
但，請配合參閱「圖2」與「圖1B」所示，其係為孔洞比例曲線示意圖，位於邊緣的邊緣孔洞7所對應的H1之臨界尺寸（Critical Dimension, CD）仍然明顯小於一般位於中心的孔洞6所對應的H2～H5的臨界尺寸，亦即，即便透過些邊緣輔助光罩4的幫助，該些邊緣孔洞7仍然無法具有足夠的臨界尺寸以進行後續製程。
The miniaturization of semiconductors has long followed the development of Moore's Law, which means that the number of transistors and resistors on a single wafer will grow at a rate that doubles every year. This theory has been quite applicable over the past three decades. So far, it has been revised to double the speed every 18 months. However, the semiconductor process is mainly carried out by means of development etching, but the diffraction problem of light has gradually become a serious problem in the case where the process size is getting smaller and smaller.
In order to continue to insert wafers of the same size into more transistors, technologies such as Extreme Ultraviolet (EUV) and double exposure have been developed at this stage to further reduce line width and reduce the crystal. volume of. And because EUV's technology maturity is still insufficient, double-exposure technology has become one of the most important technologies for reducing semiconductor size. The double exposure mainly adjusts the position of the exposure in a displacement manner after the first exposure to perform the second exposure, thereby avoiding the problem that the exposure position is incorrect due to the light diffraction. "Semiconductor Device And Method For Forming A Pattern In The Same With Double Exposure Technology", which discloses a double exposure technique, which discloses a dynamic random access memory. (DRAM) related double exposure technology and effectively improve yield.
However, please refer to FIG. 1A and FIG. 1B for a double exposure structure and an etching result. The structure includes a substrate 1 formed on the substrate 1 and parallel to a first direction. a first mask 2, a plurality of second masks 3 formed on the substrate 1 and perpendicular to the first direction, and an edge auxiliary mask 4 formed on the substrate 1 in parallel with the first direction, the first A reticle 2 overlaps the second reticle 3 to form a plurality of overlapping dots 5, and the overlapping dots 5 are made of a positive photoresist or a negative photoresist process according to the etching process, so that the substrate 1 located at the overlapping points 5 can be It is a hole or a cylinder. In Fig. 1B, it corresponds to the position of the dotted circle in Fig. 1A. It is assumed that the exposure is developed by means of negative photoresist, so that the positions of the overlapping points 5 are made. A hole 6 is formed. Since the overlapping points 5 at the edges cannot utilize the adjacent reticle to have a sufficient depth of focus (Defth Of Focus, DOF) to form the holes 6, the edge auxiliaries 4 must be disposed through the first reticle. The edge of 2, to assist the substrate 1 adjacent to the edge auxiliary reticle 4 and corresponding to the positions of the overlapping points 5, is shaped as a hole 6.
However, please refer to the "Figure 2" and "Figure 1B" diagrams, which are schematic diagrams of the hole ratio curve. The critical dimension (CD) of H1 corresponding to the edge hole 7 at the edge is still significantly smaller than the general center. The critical dimension of H2 to H5 corresponding to the hole 6 is that the edge holes 7 cannot have sufficient critical dimensions for subsequent processes even with the help of the edge auxiliary mask 4.
本發明之主要目的，在於解決習知技術位於邊緣的孔洞之臨界尺寸太小，而無法進行後續製程的問題。
為達上述目的，本發明提供一種雙重曝光的光罩結構，其係對一基材進行曝光顯影，該基材具有一中心區以及一邊緣區，該光罩結構包含有複數相互平行間隔且對應於該中心區的第一光罩、複數相互平行間隔且對應於該中心區的第二光罩、一平行於該些第一光罩且與該些第二光罩之一端點連接的邊緣連接部、複數平行且間隔設置於該邊緣連接部相對遠離該第一光罩之一側的邊緣輔助光罩，以及複數沿一直線排列的輔助光罩。該些第二光罩分別與該些第一光罩相交，並形成複數重疊區域，該邊緣連接部對應於該中心區與該邊緣區之交界位置，定義相鄰於該邊緣連接部的該第一光罩為一邊緣第一光罩；該些邊緣輔助光罩平行該些第一光罩，且對應於該邊緣區；而該些輔助光罩設置於該邊緣連接部與該邊緣第一光罩之間並沿一直線排列，且該些輔助光罩之間相互不接觸，並對應於該些第二光罩上，以輔助相鄰於該些輔助光罩旁的該些重疊區域有足夠的聚焦深度，進行曝光顯影。
除此之外，本發明亦揭露一種雙重曝光及顯影的方法，其係對一基材進行曝光顯影，該基材具有一中心區以及一邊緣區，該雙重曝光及顯影的方法包含有以下步驟：
S1：利用複數相互平行間隔的第二光罩於該中心區進行曝光，形成複數對應的第二光阻，且一連接於該些第二光罩之一端點的邊緣連接部同時於該邊緣區相鄰該中心區的位置進行曝光，而形成對應的一邊緣光阻；
S2：形成複數相互平行間隔的第一光罩，以及複數沿一直線排列且平行於該些第一光罩的輔助光罩，該些第一光罩與該輔助光罩皆平行於該邊緣連接部，且該些輔助光罩之間相互不接觸；
S3：該些第一光罩於該中心區進行曝光，形成複數相交於該些第二光阻的第一光阻，且形成複數重疊光阻區，定義相鄰於該邊緣光阻旁的第一光阻為一設定光阻，該些輔助光罩係位於該設定光阻與該邊緣光阻之間，並且對應於該些第二光阻的位置，配合該些第一光罩進行曝光顯影；及
S4：於步驟S3進行的同時，複數平行於該些第一光罩的邊緣輔助光罩設置於該邊緣區的位置進行對應的曝光顯影。
由上述說明可知，本發明具有下列特點：
一、利用該些輔助光罩的設計，而協助相鄰於該邊緣區的該些重疊區域有足夠的聚焦深度，進行曝光顯影。
二、在半導體製程之線寬漸小的製程中，藉由該些輔助光罩的輔助，提高曝光對焦的裕度（margin）。
The main object of the present invention is to solve the problem that the critical dimension of the hole at the edge of the prior art is too small to perform subsequent processes.
In order to achieve the above object, the present invention provides a double-exposure reticle structure for exposing and developing a substrate having a central region and an edge region, the reticle structure including a plurality of parallel intervals and corresponding a first reticle in the central area, a plurality of second reticles spaced apart from each other and corresponding to the central area, and an edge parallel to the first reticles and connected to one end of the second reticle And a plurality of parallel auxiliary spacers disposed at an edge of the edge connecting portion opposite to one side of the first mask, and a plurality of auxiliary masks arranged along a line. The second reticle respectively intersects the first reticle and forms a plurality of overlapping regions corresponding to the boundary position between the central region and the edge region, and defines the first adjacent to the edge connecting portion a reticle is an edge first reticle; the edge auxiliaries are parallel to the first reticles and correspond to the edge region; and the auxiliary reticle is disposed at the edge connection portion and the edge first light The hoods are arranged along a straight line, and the auxiliary reticles are not in contact with each other and correspond to the second reticles to assist the overlapping regions adjacent to the auxiliary reticles to have sufficient Focus depth and perform exposure development.
In addition, the present invention also discloses a double exposure and development method for exposing and developing a substrate having a central region and an edge region, and the double exposure and development method comprises the following steps :
S1: exposing the second photomask to the central region by using a plurality of second photomasks spaced apart from each other to form a plurality of corresponding second photoresists, and an edge connection portion connected to one end of the second photomasks is simultaneously at the edge region Positioning adjacent to the central area is performed to form a corresponding edge photoresist;
S2: forming a plurality of first reticles spaced apart from each other, and a plurality of auxiliary reticles arranged along a line and parallel to the first reticles, the first reticle and the auxiliary reticle being parallel to the edge connection portion And the auxiliary reticles are not in contact with each other;
S3: the first reticle is exposed in the central region to form a plurality of first photoresists intersecting the second photoresists, and forming a plurality of overlapping photoresist regions, defining a number adjacent to the edge photoresist a photoresist is a set photoresist, and the auxiliary mask is located between the set photoresist and the edge photoresist, and corresponding to the positions of the second photoresists, the first mask is used for exposure and development. ;and
S4: Simultaneously, in step S3, a plurality of edge auxiliary masks parallel to the first masks are disposed at positions of the edge regions for corresponding exposure development.
As can be seen from the above description, the present invention has the following features:
1. Using the design of the auxiliary reticle to assist the overlapping regions adjacent to the edge region to have sufficient depth of focus for exposure development.
2. In the process of narrowing the line width of the semiconductor process, the margin of the exposure focus is improved by the assistance of the auxiliary masks.
習知技術
1‧‧‧基底
2‧‧‧第一光罩
3‧‧‧第二光罩
4‧‧‧邊緣輔助光罩
5‧‧‧重疊點
6‧‧‧孔洞
7‧‧‧邊緣孔洞
本發明
10‧‧‧基材
11‧‧‧中心區
12‧‧‧邊緣區
20‧‧‧第一光罩
21‧‧‧邊緣第一光罩
30‧‧‧第二光罩
31‧‧‧邊緣連接部
40‧‧‧邊緣輔助光罩
50、50a‧‧‧輔助光罩
60‧‧‧重疊區域
61‧‧‧重疊光阻區Conventional technology
1‧‧‧Base
2‧‧‧First mask
3‧‧‧second mask
4‧‧‧Edge-assisted mask
5‧‧‧ overlapping points
6‧‧‧ holes
7‧‧‧Edge Holes of the Invention
10‧‧‧Substrate
11‧‧‧Central District
12‧‧‧Edge area
20‧‧‧First mask
21‧‧‧Edge first mask
30‧‧‧second mask
31‧‧‧Edge Connections
40‧‧‧Edge-assisted mask
50, 50a‧‧‧Auxiliary mask
60‧‧‧Overlapping areas
61‧‧‧Overall photoresist area
圖1A，為習知技術之光罩結構示意圖。
圖1B，為習知技術之蝕刻孔洞示意圖。
圖2，為習知技術之孔洞比例曲線示意圖。
圖3，為本發明第一實施例之光罩結構示意圖。
圖4，為本發明之步驟流程示意圖。
圖5，為本發明另一實施例之步驟流程示意圖。
圖6，為本發明第二實施例之光罩結構示意圖。
圖7，為本發明之孔洞比例曲線示意圖。FIG. 1A is a schematic view showing the structure of a reticle of the prior art.
FIG. 1B is a schematic view of an etched hole of the prior art.
FIG. 2 is a schematic diagram of a hole ratio curve of the prior art.
FIG. 3 is a schematic structural view of a photomask according to a first embodiment of the present invention.
4 is a schematic flow chart of the steps of the present invention.
FIG. 5 is a schematic flow chart of steps according to another embodiment of the present invention.
FIG. 6 is a schematic structural view of a photomask according to a second embodiment of the present invention.
Fig. 7 is a schematic view showing the ratio of the hole ratio of the present invention.
有關本發明之詳細說明及技術內容，現就配合圖示說明如下：
請參閱「圖3」所示，本發明係為一種雙重曝光的光罩結構，其係對一基材10進行曝光顯影，該基材10具有一中心區11以及一邊緣區12，該光罩結構包含有複數相互平行間隔且對應於該中心區11的第一光罩20、複數相互平行間隔且對應於該中心區11的第二光罩30、一平行於該些第一光罩20且與該些第二光罩30之一端點連接的邊緣連接部31、複數平行且間隔設置於該邊緣連接部31相對遠離該第一光罩20之一側的邊緣輔助光罩40，以及複數沿一直線排列的輔助光罩50。該些第二光罩30分別與該些第一光罩20相交，並形成複數重疊區域60，該邊緣連接部31對應於該中心區11與該邊緣區12之交界位置，定義相鄰於該邊緣連接部31的該第一光罩20為一邊緣第一光罩21；該些邊緣輔助光罩40平行該些第一光罩20，且對應於該邊緣區12；而該些輔助光罩50設置於該邊緣連接部31與該邊緣第一光罩21之間並沿一直線排列，且該些輔助光罩50之間相互不接觸，並對應於該些第二光罩30上。亦即，該些輔助光罩50對應於該些第二光罩30相互之間的距離而具有對應的間距大小，恰使該些輔助光罩50重疊於該些第二光罩30上。藉此以輔助相鄰於該些輔助光罩50旁的該些重疊區域60有足夠的聚焦深度，進行曝光顯影。其中，該些輔助光罩50沿該些第一光罩20方向的長度大於該些第二光罩30的寬度，使該輔助光罩50凸出於該第二光罩30的區域，利用輔助光罩50所涵蓋範圍較大的方式，而可較為有效的進行曝光顯影。
除此之外，請配合參閱「圖4」所示，本發明亦揭露了一種雙重曝光及顯影的方法，包含有以下步驟：
S1：第一次光罩曝光，利用相互平行間隔的該些第二光罩30於該中心區11進行曝光，形成複數對應的第二光阻（未圖示），且連接於該些第二光罩30之一端點的該邊緣連接部31同時於該邊緣區12相鄰該中心區11的位置進行曝光，而形成對應的一邊緣光阻（未圖示）；
S2：相對光罩成型，形成相互平行間隔的該些第一光罩20，以及沿一直線排列且平行於該些第一光罩20的該輔助光罩50，該些第一光罩20與該輔助光罩50皆平行於該邊緣連接部31，且該些輔助光罩50之間相互不接觸；
S3：第二次光罩曝光，該些第一光罩20於該中心區11進行曝光，形成複數相交於該些第二光阻的第一光阻（未圖示），且形成複數重疊光阻區61，其係對應於上述的重疊區域60，定義相鄰於該邊緣光阻旁的第一光阻為一設定光阻，該些輔助光罩50係位於該設定光阻與該邊緣光阻之間，並且對應於該些第二光阻的位置，配合該些第一光罩20進行曝光顯影，其中，該些輔助光罩50沿該些第一光罩20方向的長度大於該些第二光罩30的寬度；及
S4：輔助曝光，於步驟S3進行的同時，複數平行於該些第一光罩20的邊緣輔助光罩40設置於該邊緣區12的位置進行對應的曝光顯影，該些邊緣輔助光罩40亦用於輔助位於中心區11的第一光阻以及第二光阻成形。
上述的說明方式係先以第二光罩30進行第二光阻的曝光顯影，而在實際實施時，並不限定光罩曝光的先後順序，亦可以先進行第一光罩20以及輔助光罩50的曝光顯影，而後在進行第二光罩30的曝光顯影。請配合參閱「圖5」所示，詳細步驟說明如下：
P1：光罩成型，形成相互平行間隔的該些第一光罩20，以及沿一直線排列於該第一光罩20之一側且平行於該些第一光罩20的該些輔助光罩50，該些輔助光罩50之間相互不接觸；
P2：第一次光罩曝光，該些第一光罩20於該中心區11進行曝光，形成該些第一光阻，定義該些第一光阻最邊緣的第一光阻為一設定光阻，該些輔助光罩50係位於該設定光阻遠離該些第一光阻的一側，配合該些第一光罩20進行曝光顯影；
P3：輔助曝光，於步驟P2進行的同時，平行於該些第一光罩20的該些邊緣輔助光罩40設置於該邊緣區12的位置進行對應的曝光顯影，以同時輔助該些第一光罩20進行對應的曝光顯影；以及
P4：第二次光罩曝光，利用相互平行間隔的該些第二光罩30於該中心區11進行曝光，形成相交於該些第一光阻的該些第二光阻，並形成該些重疊光阻區61，且連接於該些第二光罩30之一端點的該邊緣連接部31同時於該邊緣區12相鄰該中心區11的位置進行曝光，而形成對應的該邊緣光阻，該邊緣光阻平行於該些第一光阻，且該些第二光罩30進行曝光顯影的位置係對應於該些輔助光罩50的位置。
請配合參閱「圖6」所示，其係為本發明的第二實施例，該些輔助光罩50a除了可以分別對應於該些第二光罩30而具有相等於該些第二光罩30的數量之外，該些輔助光罩50a的數量可為該些第二光罩30的一半，而沿一直線橫跨疊置於相鄰的第二光罩30上，且各該些輔助光罩50a之間具有一空格距離。亦即，該些輔助光罩50a的長度比第一實施例中的長度來的長，而使兩個第二光罩30共同連接於一個輔助光罩50a上，而該些輔助光罩50a之間仍然沿一直線排列，且間隔一空格距離。藉此，亦能達到輔助該些重疊光阻區61曝光顯影的目的。
另需特別說明的是，該些輔助光罩50、50a之間不可相互連接，若將輔助光罩50、50a連接而形成完整的一直線，則該輔助光罩50、50a便會有類似第一光罩20的功能，因而該輔助光罩50、50a與該第二光罩30交疊的區域，便會在蝕刻時一併發生相同於該些重疊光阻區61的蝕刻或保留現象，反而形成製程中所不需要的部分。
最後，請配合參閱「圖7」所示，孔洞位置與孔洞大小的比例曲線表現上，可發現代表該中心區11相鄰於邊緣區12的孔洞位置H1的臨界尺寸不僅不會小於位於其他中心區11的孔洞位置H2～H5的臨界尺寸，反而有略大於該些孔洞位置H2～H5的臨界尺寸的狀況，因此可有效的解決邊緣位置的孔洞的臨界尺寸太小的問題。
綜上所述，本發明具有下列特點：
一、利用該些輔助光罩的設計，而協助相鄰於該邊緣區的該些重疊區域有足夠的聚焦深度，進行曝光顯影。
二、在半導體製程之線寬漸小的製程中，藉由該些輔助光罩的輔助，提高曝光對焦的裕度（margin）。
三、利用橫跨該些第二光罩並疊置於該些第二光罩上的輔助光罩，有效提升聚焦的能力。
The detailed description and technical content of the present invention will now be described as follows:
Referring to FIG. 3, the present invention is a double exposure reticle structure for exposing and developing a substrate 10 having a central region 11 and an edge region 12, the reticle The structure includes a plurality of first reticle 20 spaced apart from each other and corresponding to the central region 11, a plurality of second reticle 30 spaced apart from each other and corresponding to the central region 11, and a parallel to the first reticle 20 An edge connecting portion 31 connected to one end of the second reticle 30, a plurality of parallel auxiliary spacers 40 spaced apart from the edge connecting portion 31 away from the side of the first reticle 20, and a plurality of edges Auxiliary reticle 50 arranged in a line. The second reticle 30 respectively intersects the first reticle 20 and forms a plurality of overlapping regions 60 corresponding to the boundary position between the central region 11 and the edge region 12, and is defined adjacent to the The first reticle 20 of the edge connecting portion 31 is an edge first reticle 21; the edge auxiliary reticle 40 is parallel to the first reticle 20 and corresponds to the edge region 12; and the auxiliary reticle 50 is disposed between the edge connecting portion 31 and the edge first mask 21 and arranged along a straight line, and the auxiliary masks 50 do not contact each other and correspond to the second masks 30. That is, the auxiliary reticle 50 has a corresponding spacing corresponding to the distance between the second reticles 30, such that the auxiliary reticle 50 overlaps the second reticle 30. Thereby, exposure development is performed by assisting the overlapping regions 60 adjacent to the auxiliary masks 50 to have a sufficient depth of focus. The length of the auxiliary reticle 50 in the direction of the first reticle 20 is greater than the width of the second reticle 30, so that the auxiliary reticle 50 protrudes from the area of the second reticle 30, and the auxiliary The mask 50 covers a wide range of ways, and can be more effectively exposed and developed.
In addition, please refer to "FIG. 4" as shown in the figure, the present invention also discloses a double exposure and development method, comprising the following steps:
S1: exposing the first mask to the central region 11 by using the second masks 30 spaced apart from each other to form a plurality of corresponding second photoresists (not shown), and connecting to the second portions The edge connecting portion 31 of one end of the reticle 30 is simultaneously exposed at a position adjacent to the central region 11 of the edge region 12 to form a corresponding edge photoresist (not shown);
S2: forming the first reticle 20 spaced apart from each other, and the auxiliary reticle 50 arranged in a line parallel to the first reticle 20, and the first reticle 20 and the reticle The auxiliary reticle 50 is parallel to the edge connecting portion 31, and the auxiliary reticle 50 are not in contact with each other;
S3: a second mask exposure, the first mask 20 is exposed in the central region 11, forming a plurality of first photoresists (not shown) intersecting the second photoresists, and forming a plurality of overlapping lights a resisting region 61 corresponding to the overlapping region 60, defining a first photoresist adjacent to the edge photoresist as a set photoresist, wherein the auxiliary mask 50 is located at the set photoresist and the edge light Between the resistors and the positions of the second photoresists, the first masks 20 are used for exposure and development, wherein the lengths of the auxiliary masks 50 in the direction of the first masks 20 are larger than the lengths. The width of the second mask 30; and
S4: auxiliary exposure, at the same time as step S3, a plurality of edge auxiliary reticle 40 parallel to the first reticle 20 are disposed at a position of the edge region 12 for corresponding exposure and development, and the edge auxiliary reticle 40 is also It is used to assist the first photoresist and the second photoresist formed in the central region 11.
In the above description, the second mask 30 is used for exposure and development of the second photoresist. In actual implementation, the order of exposure of the mask is not limited, and the first mask 20 and the auxiliary mask may be performed first. Exposure development of 50 is followed by exposure development of the second mask 30. Please refer to "Figure 5" for details. The detailed steps are as follows:
P1: reticle forming, forming the first reticle 20 spaced apart from each other, and the auxiliary reticle 50 arranged along a line on one side of the first reticle 20 and parallel to the first reticle 20 The auxiliary reticle 50s are not in contact with each other;
P2: the first photomask is exposed, the first photomasks 20 are exposed in the central region 11, forming the first photoresists, and the first photoresists defining the edges of the first photoresists are a set light. The auxiliary mask 50 is located on a side of the set photoresist away from the first photoresists, and is combined with the first masks 20 for exposure and development;
P3: auxiliary exposure, while the step P2 is performed, the edge auxiliary reticle 40 parallel to the first reticle 20 is disposed at the position of the edge region 12 for corresponding exposure development to simultaneously assist the first The photomask 20 performs corresponding exposure development;
P4: a second mask exposure, using the second masks 30 spaced apart from each other to expose the central region 11 to form the second photoresists intersecting the first photoresists, and forming the The edge resisting portion 61 is overlapped, and the edge connecting portion 31 connected to one end of the second photomask 30 is simultaneously exposed at a position adjacent to the central region 11 of the edge region 12 to form a corresponding edge resist. The edge photoresist is parallel to the first photoresists, and the positions of the second masks 30 for exposure and development correspond to the positions of the auxiliary masks 50.
Referring to FIG. 6 , which is a second embodiment of the present invention, the auxiliary masks 50 a may be equal to the second masks 30 except for the second masks 30 . In addition to the number of the auxiliary reticle 50a, the number of the auxiliary reticle 50a may be half of the second reticle 30, and may be stacked on the adjacent second reticle 30 along a straight line, and each of the auxiliary reticles There is a space between 50a. That is, the lengths of the auxiliary reticle 50a are longer than the length in the first embodiment, and the two second reticle 30 are commonly connected to one auxiliary reticle 50a, and the auxiliary reticle 50a They are still arranged along a straight line and separated by a space. Thereby, the purpose of assisting the exposure and development of the overlapping photoresist regions 61 can also be achieved.
It should be particularly noted that the auxiliary reticle 50, 50a are not connectable to each other. If the auxiliary reticle 50, 50a is connected to form a complete straight line, the auxiliary reticle 50, 50a will be similar to the first. The function of the reticle 20, and thus the region where the auxiliary reticle 50, 50a overlaps the second reticle 30, may cause etching or retention similar to the overlapping photoresist regions 61 during etching, instead Form the parts that are not needed in the process.
Finally, please refer to the ratio curve of the hole position and the hole size as shown in "Fig. 7". It can be found that the critical dimension of the hole position H1 representing the central region 11 adjacent to the edge region 12 is not less than that located at other centers. The critical dimension of the hole positions H2 to H5 of the region 11 is rather slightly larger than the critical dimension of the hole positions H2 to H5, so that the problem that the critical dimension of the hole at the edge position is too small can be effectively solved.
In summary, the present invention has the following features:
1. Using the design of the auxiliary reticle to assist the overlapping regions adjacent to the edge region to have sufficient depth of focus for exposure development.
2. In the process of narrowing the line width of the semiconductor process, the margin of the exposure focus is improved by the assistance of the auxiliary masks.
3. Using an auxiliary reticle that spans the second reticle and superimposed on the second reticle to effectively enhance the ability to focus.
10‧‧‧基材 10‧‧‧Substrate
11‧‧‧中心區 11‧‧‧Central District
12‧‧‧邊緣區 12‧‧‧Edge area
20‧‧‧第一光罩 20‧‧‧First mask
21‧‧‧邊緣第一光罩 21‧‧‧Edge first mask
30‧‧‧第二光罩 30‧‧‧second mask
31‧‧‧邊緣連接部 31‧‧‧Edge Connections
40‧‧‧邊緣輔助光罩 40‧‧‧Edge-assisted mask
50‧‧‧輔助光罩 50‧‧‧Auxiliary mask
60‧‧‧重疊區域 60‧‧‧Overlapping areas
61‧‧‧重疊光阻區 61‧‧‧Overall photoresist area
Claims (9)
複數相互平行間隔且對應於該中心區的第一光罩；
複數相互平行間隔且對應於該中心區的第二光罩，該些第二光罩分別與該些第一光罩相交，並形成複數重疊區域；
一平行於該些第一光罩且與該些第二光罩之一端點連接的邊緣連接部，對應於該中心區與該邊緣區之交界位置，定義相鄰於該邊緣連接部的該第一光罩為一邊緣第一光罩；
複數平行且間隔設置於該邊緣連接部相對遠離該第一光罩之一側的邊緣輔助光罩，該些邊緣輔助光罩平行該些第一光罩，且對應於該邊緣區；以及
複數設置於該邊緣連接部與該邊緣第一光罩之間並沿一直線排列的輔助光罩，該些輔助光罩相互不接觸，且對應於該些第二光罩上，以輔助相鄰於該些輔助光罩旁的該些重疊區域有足夠的聚焦深度，進行曝光顯影。A double-exposure reticle structure for exposing and developing a substrate having a central region and an edge region, the reticle structure comprising:
a plurality of first reticles spaced apart from each other and corresponding to the central region;
a plurality of second reticles spaced apart from each other and corresponding to the central region, the second reticle respectively intersecting the first reticle and forming a plurality of overlapping regions;
An edge connecting portion parallel to the first reticle and connected to one end of the second reticle, corresponding to the boundary position between the central region and the edge region, defining the first adjacent to the edge connecting portion a reticle as an edge first reticle;
a plurality of parallel auxiliary spacers disposed at an edge of the edge connecting portion opposite to one side of the first reticle, the edge auxiliary reticles parallel to the first reticles, and corresponding to the edge region; and a plurality of settings An auxiliary reticle between the edge connecting portion and the edge first reticle and arranged along a line, the auxiliary reticles are not in contact with each other, and correspond to the second reticles to assist adjacent to the reticle The overlapping areas beside the auxiliary mask have sufficient depth of focus for exposure development.
S1：利用複數相互平行間隔的第二光罩於該中心區進行曝光，形成複數對應的第二光阻，且一連接於該些第二光罩之一端點的邊緣連接部同時於該邊緣區相鄰該中心區的位置進行曝光，而形成對應的一邊緣光阻；
S2：形成複數相互平行間隔的第一光罩，以及複數沿一直線排列且平行於該些第一光罩的輔助光罩，該些第一光罩與該輔助光罩皆平行於該邊緣連接部，且該些輔助光罩之間相互不接觸；
S3：該些第一光罩於該中心區進行曝光，形成複數相交於該些第二光阻的第一光阻，且形成複數重疊光阻區，定義相鄰於該邊緣光阻旁的第一光阻為一設定光阻，該些輔助光罩係位於該設定光阻與該邊緣光阻之間，並且對應於該些第二光阻的位置，配合該些第一光罩進行曝光顯影；及
S4：於步驟S3進行的同時，複數平行於該些第一光罩的邊緣輔助光罩設置於該邊緣區的位置進行對應的曝光顯影。A double exposure and development method for exposing and developing a substrate having a central region and an edge region, the double exposure and development method comprising the following steps:
S1: exposing the second photomask to the central region by using a plurality of second photomasks spaced apart from each other to form a plurality of corresponding second photoresists, and an edge connection portion connected to one end of the second photomasks is simultaneously at the edge region Positioning adjacent to the central area is performed to form a corresponding edge photoresist;
S2: forming a plurality of first reticles spaced apart from each other, and a plurality of auxiliary reticles arranged along a line and parallel to the first reticles, the first reticle and the auxiliary reticle being parallel to the edge connection portion And the auxiliary reticles are not in contact with each other;
S3: the first reticle is exposed in the central region to form a plurality of first photoresists intersecting the second photoresists, and forming a plurality of overlapping photoresist regions, defining a number adjacent to the edge photoresist a photoresist is a set photoresist, and the auxiliary mask is located between the set photoresist and the edge photoresist, and corresponding to the positions of the second photoresists, the first mask is used for exposure and development. ;and
S4: Simultaneously, in step S3, a plurality of edge auxiliary masks parallel to the first masks are disposed at positions of the edge regions for corresponding exposure development.
P1：形成複數相互平行間隔的第一光罩，以及複數沿一直線排列於該第一光罩之一側且平行於該些第一光罩的輔助光罩，該些輔助光罩之間相互不接觸；
P2：該些第一光罩於該中心區進行曝光，形成複數第一光阻，定義該些第一光阻最邊緣的第一光阻為一設定光阻，該些輔助光罩係位於該設定光阻遠離該些第一光阻的一側，配合該些第一光罩進行曝光顯影；
P3：於步驟P2進行的同時，複數平行於該些第一光罩的邊緣輔助光罩設置於該邊緣區的位置進行對應的曝光顯影；以及
P4：利用複數相互平行間隔的第二光罩於該中心區進行曝光，形成複數相交於該些第一光阻的第二光阻，並形成複數重疊光阻區，且一連接於該些第二光罩之一端點的邊緣連接部同時於該邊緣區相鄰該中心區的位置進行曝光，而形成對應的一邊緣光阻，該邊緣光阻平行於該些第一光阻，且該些第二光罩進行曝光顯影的位置係對應於該些輔助光罩的位置。A double exposure and development method for exposing and developing a substrate having a central region and an edge region, the double exposure and development method comprising the following steps:
P1: forming a plurality of first reticles spaced apart from each other in parallel, and a plurality of auxiliary reticles arranged in a line on one side of the first reticle and parallel to the first reticles, the auxiliary reticles are not mutually contact;
P2: the first masks are exposed in the central region to form a plurality of first photoresists, and the first photoresists defining the edges of the first photoresists are a set photoresist, and the auxiliary masks are located Setting a side of the photoresist away from the first photoresists, and performing exposure and development together with the first masks;
P3: at the same time as step P2, the plurality of edge auxiliary reticles parallel to the first reticle are disposed at positions of the edge regions for corresponding exposure development;
P4: exposing the second photomask to the central region by using a plurality of second photomasks spaced apart from each other to form a plurality of second photoresists intersecting the first photoresists, and forming a plurality of overlapping photoresist regions, and connecting to the plurality of An edge connection portion of one end of the two masks is simultaneously exposed at a position adjacent to the central region of the edge region to form a corresponding edge photoresist, the edge photoresist is parallel to the first photoresists, and the The position at which the second mask performs exposure development corresponds to the position of the auxiliary masks.
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