TWI456163B - 光學影像擷取模組、對位方法及觀測方法 - Google Patents

光學影像擷取模組、對位方法及觀測方法 Download PDF

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TWI456163B
TWI456163B TW102129545A TW102129545A TWI456163B TW I456163 B TWI456163 B TW I456163B TW 102129545 A TW102129545 A TW 102129545A TW 102129545 A TW102129545 A TW 102129545A TW I456163 B TWI456163 B TW I456163B
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Taiwan
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wavelength
light
image capturing
pattern
optical image
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TW102129545A
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TW201508244A (zh
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Metal Ind Res & Dev Ct
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Priority to TW102129545A priority Critical patent/TWI456163B/zh
Priority to US14/455,240 priority patent/US9459460B2/en
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10Beam splitting or combining systems
    • G02B27/1006Beam splitting or combining systems for splitting or combining different wavelengths
    • G02B27/1013Beam splitting or combining systems for splitting or combining different wavelengths for colour or multispectral image sensors, e.g. splitting an image into monochromatic image components on respective sensors
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10Beam splitting or combining systems
    • G02B27/14Beam splitting or combining systems operating by reflection only
    • G02B27/149Beam splitting or combining systems operating by reflection only using crossed beamsplitting surfaces, e.g. cross-dichroic cubes or X-cubes
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7007Alignment other than original with workpiece
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046Strategy, e.g. mark, sensor or wavelength selection
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/681Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Elements Other Than Lenses (AREA)

Claims (12)

  1. 一種光學影像擷取模組,包括:一第一稜鏡,具有一第一面、一第二面及一第三面,其中該第一面及該第二面之剖面長度等長;一第二稜鏡,具有一第一面、一第二面及一第三面,其中該第一面及該第二面之剖面長度等長,該第二面鄰近該第一稜鏡之該第一面;一第三稜鏡,具有一第一面、一第二面及一第三面,其中該第一面及該第二面之剖面長度等長,該第一面鄰近該第一稜鏡之該第二面;一第四稜鏡,具有剖面長度等長的一第一面及一第二面,該第一面鄰近該第三稜鏡之該第二面,該第四稜鏡之該第二面鄰近該第二稜鏡之該第一面;一第一波長穿透媒介,設置在該第二稜鏡的該第三面,其中該第一波長穿透媒介能讓具有大於一截止波長的一第一波長光線通過,並反射具有小於該截止波長的一第二波長光線;一第二波長穿透媒介,設置在該第三稜鏡的該第三面,其中該第二波長穿透媒介能讓具有小於該截止波長的該第二波長光線通過,並反射具有大於該截止波長的該第一波長光線;一分光鍍膜組,具有複數鍍膜,分別設置在該第一稜鏡之第一面與第二稜鏡的第二面之間、該第二稜鏡之第一面與第四稜鏡的第二面之間、該第四稜鏡之第一面與第三 稜鏡的第二面之間,以及該第三稜鏡之第一面與第一稜鏡的第二面之間;一光源,發射一光線至該第一稜鏡之第三面;以及一影像擷取裝置,相對設置於該第一稜鏡之該第三面。
  2. 根據申請專利範圍第1項所述之光學影像擷取模組,更包括:一分光鏡,設置在該第一稜鏡與該影像擷取裝置之間,並鄰近該第一稜鏡的第三面;其中,該光源之光線進入該分光鏡的方向與該影像擷取裝置的影像接收方向垂直。
  3. 根據申請專利範圍第1項所述之光學影像擷取模組,其中該光源發射出該第一波長光線及該第二波長光線。
  4. 根據申請專利範圍第1項所述之光學影像擷取模組,其中該光源發射出白光。
  5. 根據申請專利範圍第1項所述之光學影像擷取模組,其中該第一波長光線為大於該截止波長之單一波長光線,以及該第二波長光線為小於該截止波長之單一波長光線。
  6. 根據申請專利範圍第1項所述之光學影像擷取模組,其中該第一波長光線為大於該截止波長之光線,以及該第二波長光線為小於該截止波長之光線,而且該第一波長光線以及該第二波長光線為具有連續波長範圍之光線。
  7. 根據申請專利範圍第1、5或6項所述之光學影像擷取模組,其中該截止波長為該第一穿透媒介的透光率曲線與該第二穿透媒介的透光率曲線之交會處。
  8. 根據申請專利範圍第1項所述之光學影像擷取模組,其中該第一波長穿透媒介為一鍍膜或一濾鏡,該第二波長穿透媒介為一鍍膜或一濾鏡。
  9. 一種用在一上基板及一下基板的對位方法,該上基板及該下基板相對設置,該對位方法包括下列步驟:提供一光學影像擷取模組,其設置於該上基板及該下基板之間,該光學影像擷取模組為申請專利範圍第1項所述之光學影像擷取模組;將該光源發射出一光線至該第一稜鏡之第三面;將該第一波長光線自該第一波長穿透媒介離開該光學影像擷取模組而照射該上基板之圖案,並將該第二波長光線自該第二波長穿透媒介離開該光學影像擷取模組而照射該下基板之圖案;反射該上基板之圖案而於該影像擷取裝置成像一第一圖案,反射該下基板之圖案而於該影像擷取裝置成像一第二圖案;判斷該第一圖案與該第二圖案的位置;以及移動該上基板或該下基板,使該第一圖案與該第二圖案相互重疊。
  10. 根據申請專利範圍第9項所述之對位方法,更包括下列步驟:移動該上基板和/或該下基板,使該第一圖案與該第二圖案在該影像擷取裝置上相互重疊。
  11. 一種觀測方法,用以觀測一上基板或一下基板之圖案,該上基板與該下基板相對設置,該觀測方法包括下列步驟:提供一光學影像擷取模組,該光學影像擷取模組為申請專利範圍第1項所述之光學影像擷取模組;發射出該第一波長光線至該第一稜鏡之第三面,並經該分光鍍膜組的部份反射及部份穿透,使部份的第一波長光線照射該上基板;反射該上基板之圖案到該影像擷取裝置;觀測該上基板之圖案;關閉該第一波長光線;發射出該第二波長光線至該第一稜鏡之第三面,並經該分光鍍膜組的部份反射及部份穿透,使部份的第二波長光線照射該下基板;反射該下基板之圖案到該影像擷取裝置;以及觀測該下基板之圖案。
  12. 根據申請專利範圍第11項所述之觀測方法,其中該第一波長光線的波長大於一截止波長,該第二波長光線的波長小於該截止波長。
TW102129545A 2013-08-16 2013-08-16 光學影像擷取模組、對位方法及觀測方法 TWI456163B (zh)

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US14/455,240 US9459460B2 (en) 2013-08-16 2014-08-08 Optical image capturing module, aligning method, and observing method

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US9459460B2 (en) 2016-10-04
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