TWI455868B - 排列奈米粒子於基板上之系統 - Google Patents

排列奈米粒子於基板上之系統 Download PDF

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Publication number
TWI455868B
TWI455868B TW099103278A TW99103278A TWI455868B TW I455868 B TWI455868 B TW I455868B TW 099103278 A TW099103278 A TW 099103278A TW 99103278 A TW99103278 A TW 99103278A TW I455868 B TWI455868 B TW I455868B
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Taiwan
Prior art keywords
substrate
nanoparticles
arranging
substrate according
arranging nanoparticles
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TW099103278A
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English (en)
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TW201127743A (en
Inventor
Shu Chen Hsieh
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Univ Nat Sun Yat Sen
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Priority to TW099103278A priority Critical patent/TWI455868B/zh
Priority to US13/017,326 priority patent/US8808558B2/en
Publication of TW201127743A publication Critical patent/TW201127743A/zh
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Publication of TWI455868B publication Critical patent/TWI455868B/zh

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Claims (12)

  1. 一種排列奈米粒子於基板上之系統，包括：一基板；複數個多胜肽模板(polypeptide template)，形成於該基板上；以及複數個奈米粒子，形成於該多胜肽模板(polypeptide template)之上。
  2. 如申請專利範圍第1項所述之排列奈米粒子於基板上之系統，其中該基板包括透明基板。
  3. 如申請專利範圍第2項所述之排列奈米粒子於基板上之系統，其中該透明基板包括玻璃基板(glass)、矽基板、石英基板、氧化銦錫基板(indium tin oxide,ITO)或上述之組合。
  4. 如申請專利範圍第1項所述之排列奈米粒子於基板上之系統，其中該基板包括可撓性(flexible)基板。
  5. 如申請專利範圍第4項所述之排列奈米粒子於基板上之系統，其中該可撓性(flexible)基板包括聚二甲基矽氧烷(polydimethylsiloxane,PDMS)、聚對苯二甲酸乙二酯(polyethylene terephthalate,PET)、聚萘二甲酸乙二醇酯(Polyethylenenaphthalate，PEN)、聚碳酸酯(Polycarbonate，PC)、聚醚砜(Polyethersulfone，PES)或聚亞醯胺(Polyimide，PI)。
  6. 如申請專利範圍第1項所述之排列奈米粒子於基板上之系統，其中該些多胜肽模板(polypeptide template)包括類澱粉蛋白纖維(amyloid fibril)模板。
  7. 如申請專利範圍第6項所述之排列奈米粒子於基板上之系統，其中該類澱粉蛋白纖維(amyloid fibril)包括胰島素澱粉蛋白(insulin amyloid fibril)、血清澱粉樣蛋白A(serum amyloid A)、類澱粉蛋白β(amyloid-beta)、硫酸肝素糖蛋白(heparin sulphate proteoglycans)、補體蛋白(complement protein)、甲狀腺素運載蛋白(transthyretin protein)、載脂蛋白E(apolipoprotein E)、C-蛋白(C-reactive protein,CPR)或抗胰蛋白酵素(antitrypsin,AAT)。
  8. 如申請專利範圍第1項所述之排列奈米粒子於基板上之系統，其中該些多胜肽模板(polypeptide template)之直徑為約2nm~5nm。
  9. 如申請專利範圍第1項所述之排列奈米粒子於基板上之系統，其中該些多胜肽模板(polypeptide template)之長度為約5nm~50μm。
  10. 如申請專利範圍第1項所述之排列奈米粒子於基板上之系統，其中該些奈米粒子包括金、銀、半導體奈米粒子或上述之組合。
  11. 如申請專利範圍第10項所述之排列奈米粒子於基板上之系統，其中該半導體奈米粒子包括硒汞化鋅(ZnSeHg)、硫化鎘(CdS)、硫化鉛(PbS)、硫化鋅(ZnS)、硒化鎘(CdSe)、硒化鎘(ZnSe)、銻化鎘(CdTe)或銻化鋅(ZnTe)。
  12. 如申請專利範圍第1項所述之排列奈米粒子於基板上之系統，其中該些奈米粒子之粒徑大小為約1nm~500nm。
TW099103278A 2010-02-04 2010-02-04 排列奈米粒子於基板上之系統 TWI455868B (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW099103278A TWI455868B (zh) 2010-02-04 2010-02-04 排列奈米粒子於基板上之系統
US13/017,326 US8808558B2 (en) 2010-02-04 2011-01-31 System and method for alignment of nanoparticles on substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW099103278A TWI455868B (zh) 2010-02-04 2010-02-04 排列奈米粒子於基板上之系統

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TW201127743A TW201127743A (en) 2011-08-16
TWI455868B true TWI455868B (zh) 2014-10-11

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040110347A1 (en) * 2002-05-28 2004-06-10 Matsushita Electric Industrial Co. Ltd. Method of production of nanoparticle and nanoparticle produced by the method of production
TW200941509A (en) * 2008-01-30 2009-10-01 Honeywell Int Inc Transparent conductors that exhibit minimal scattering, methods for fabricating the same, and display devices comprising the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040110347A1 (en) * 2002-05-28 2004-06-10 Matsushita Electric Industrial Co. Ltd. Method of production of nanoparticle and nanoparticle produced by the method of production
TW200941509A (en) * 2008-01-30 2009-10-01 Honeywell Int Inc Transparent conductors that exhibit minimal scattering, methods for fabricating the same, and display devices comprising the same

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