TWI455337B - Solar apparatus for supplying electricity and illuminating system having the same - Google Patents

Solar apparatus for supplying electricity and illuminating system having the same Download PDF

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TWI455337B
TWI455337B TW097119078A TW97119078A TWI455337B TW I455337 B TWI455337 B TW I455337B TW 097119078 A TW097119078 A TW 097119078A TW 97119078 A TW97119078 A TW 97119078A TW I455337 B TWI455337 B TW I455337B
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module
lens
layer
solar panel
solar
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TW097119078A
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TW200950118A (en
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Ga-Lane Chen
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Hon Hai Prec Ind Co Ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/52PV systems with concentrators

Description

太陽能供電裝置及包括該供電裝置之照明系統 Solar power supply device and lighting system including the same

本發明涉及太陽能技術領域,尤其涉及一種太陽能供電裝置及包括該供電裝置之照明系統。 The present invention relates to the field of solar energy technologies, and in particular, to a solar power supply device and an illumination system including the same.

目前,普通照明燈源大多採用與其電氣連接之外部電源作為照明電源,由此耗費大量電力,不利於能源之可持續發展。 At present, most of the ordinary lighting sources use an external power source that is electrically connected thereto as a lighting power source, thereby consuming a large amount of power, which is not conducive to the sustainable development of energy.

太陽能電池由於具有取之不盡用之不竭之優點,成為能源領域之研究熱點,廣泛應用於社會生活之各領域。太陽能電池係利用太陽能電池板將太陽之輻射能光子經由半導體物質轉變為電能,請參見“Grown junction GaAs solar cell”,Shen,C.C.;Pearson,G.L.;Proceedings of the IEEE,Volume 64,Issue 3,March 1976,Page 384-385。 Because of its inexhaustible advantages, solar cells have become a research hotspot in the energy field and are widely used in various fields of social life. Solar cells use solar panels to convert solar radiant energy photons into electrical energy via semiconductor materials, see "Grown junction GaAs solar cell", Shen, CC; Pearson, GL; Proceedings of the IEEE, Volume 64, Issue 3, March 1976, Page 384-385.

近年來出現了一種太陽能照明系統,其包括太陽能電池板、照明燈具、蓄電池及控制電路。其中,太陽能電池板及照明燈具藉由控制電路分別與蓄電池相連,控制電路用於將太陽能電池板產生之電能存儲至蓄電池,並同時控制照明燈具之開啟及閉合。 In recent years, a solar lighting system has emerged that includes solar panels, lighting fixtures, batteries, and control circuitry. The solar panel and the lighting fixture are respectively connected to the battery by a control circuit, and the control circuit is used for storing the electric energy generated by the solar panel to the battery, and simultaneously controlling the opening and closing of the lighting fixture.

惟,太陽能電池板之容量有限,此種太陽能照明系統難以提供較大之光伏發電效率及較多電能。為滿足大功率用電需求,通常需 要增加太陽能電池板之數量。然,由於表面積、外觀等限制,現代房屋等建築、汽車等行動模塊、甚至各種可攜式電子模塊都很難提供大面積場所鋪設大量太陽能電池板,加上太陽能電池板本身價格昂貴,這些因素導致太陽能電池用於照明受到一定限制。 However, the capacity of solar panels is limited, and such solar lighting systems are difficult to provide greater photovoltaic power generation efficiency and more power. In order to meet the demand for high-power electricity, it is usually required To increase the number of solar panels. However, due to limitations in surface area and appearance, modern housing and other building, automotive and other mobile modules, and even various portable electronic modules are difficult to provide a large number of places to lay a large number of solar panels, coupled with the high cost of solar panels themselves, these factors The use of solar cells for lighting is subject to certain restrictions.

有鑑於此,提供一種能提高光伏發電效率高之太陽能供電裝置包括該供電裝置之照明系統實為必要。 In view of the above, it is necessary to provide a solar power supply device capable of improving photovoltaic power generation efficiency including the lighting system of the power supply device.

一種太陽能供電裝置,其包括發電模塊、控制模塊及儲能模塊。該控制模塊分別與發電模塊及儲能模塊相連,用以控制發電模塊將光能轉換為電能並將電能存儲於儲能模塊。該發電模塊包括太陽能電池板及聚光模塊。該聚光模塊包括至少一透鏡模塊,其與太陽能電池板相對,用於聚集太陽光至太陽能電池板,每個透鏡模塊包括鏡筒、沿光軸設於鏡筒內之第一透鏡、第二透鏡、第一間隔體、第二間隔體及導光體,該第一間隔體設於第一透鏡及第二透鏡之間,該第一透鏡及第二透鏡為球面透鏡或非球面透鏡,該第二間隔體設於第二透鏡及導光體之間。 A solar power supply device includes a power generation module, a control module, and an energy storage module. The control module is respectively connected to the power generation module and the energy storage module, and is configured to control the power generation module to convert the light energy into electrical energy and store the electrical energy in the energy storage module. The power generation module includes a solar panel and a concentrating module. The concentrating module includes at least one lens module opposite to the solar panel for collecting sunlight to the solar panel, each lens module including a lens barrel, a first lens disposed along the optical axis in the lens barrel, and a second a lens, a first spacer, a second spacer, and a light guide. The first spacer is disposed between the first lens and the second lens, and the first lens and the second lens are spherical lenses or aspherical lenses. The second spacer is disposed between the second lens and the light guide.

一種照明系統,其包括照明模塊及太陽能供電裝置。包括發電模塊、控制模塊及儲能模塊。該控制模塊分別與發電模塊及儲能模塊相連,用以控制發電模塊將光能轉換為電能並將電能存儲於儲能模塊。該發電模塊包括太陽能電池板及聚光模塊。該聚光模塊包括至少一透鏡模塊,其與太陽能電池板相對,用於聚集太陽光至太陽能電池板,每個透鏡模塊包括鏡筒、沿光軸設於鏡筒內之第一透鏡、第二透鏡、第一間隔體、第二間隔體及導光體,該第一間隔體設於第一透鏡及第二透鏡之間,該第一透鏡及第二透鏡 為球面透鏡或非球面透鏡,該第二間隔體設於第二透鏡及導光體之間。 A lighting system includes a lighting module and a solar powered device. It includes power generation module, control module and energy storage module. The control module is respectively connected to the power generation module and the energy storage module, and is configured to control the power generation module to convert the light energy into electrical energy and store the electrical energy in the energy storage module. The power generation module includes a solar panel and a concentrating module. The concentrating module includes at least one lens module opposite to the solar panel for collecting sunlight to the solar panel, each lens module including a lens barrel, a first lens disposed along the optical axis in the lens barrel, and a second a lens, a first spacer, a second spacer, and a light guide. The first spacer is disposed between the first lens and the second lens, and the first lens and the second lens The spherical spacer or the aspherical lens is disposed between the second lens and the light guide.

本技術方案之太陽能供電裝置由於設置有聚集太陽光之聚光裝置,使得不僅直接照射到太陽能電池板上之太陽光轉換為電能,還能使得照射到聚光裝置之太陽光透過聚光裝置後照射至太陽能電池板轉換為電能,從而於不增加太陽能電池板數量之情況下,成倍提高光伏效率,節約了成本。 The solar power supply device of the present technical solution is provided with a concentrating device for collecting sunlight, so that not only the sunlight directly irradiated onto the solar panel is converted into electric energy, but also the sunlight irradiated to the concentrating device passes through the concentrating device. The illumination is converted into electrical energy by the solar panel, thereby multiplying the photovoltaic efficiency and saving the cost without increasing the number of solar panels.

100‧‧‧太陽能供電裝置 100‧‧‧Solar power supply unit

10‧‧‧發電模塊 10‧‧‧Power Module

20‧‧‧控制模塊 20‧‧‧Control module

30‧‧‧儲能模塊 30‧‧‧ Energy storage module

11‧‧‧太陽能電池板 11‧‧‧Solar panels

12‧‧‧聚光裝置 12‧‧‧ concentrating device

111‧‧‧第一電極層 111‧‧‧First electrode layer

112‧‧‧半導體結構層 112‧‧‧Semiconductor structural layer

113‧‧‧第二電極層 113‧‧‧Second electrode layer

1111‧‧‧第一表面 1111‧‧‧ first surface

1112‧‧‧第二表面 1112‧‧‧ second surface

1121‧‧‧P型半導體結構層 1121‧‧‧P type semiconductor structural layer

1123‧‧‧N型半導體結構層 1123‧‧‧N type semiconductor structural layer

1122‧‧‧P-N結層 1122‧‧‧P-N layer

1131‧‧‧透明導電層 1131‧‧‧Transparent conductive layer

1132‧‧‧金屬導電層 1132‧‧‧Metal conductive layer

121‧‧‧鏡筒 121‧‧‧Mirror tube

122‧‧‧第一透鏡 122‧‧‧ first lens

123‧‧‧第二透鏡 123‧‧‧second lens

124‧‧‧第一間隔體 124‧‧‧First spacer

125‧‧‧第二間隔體 125‧‧‧Second spacer

126‧‧‧導光體 126‧‧‧Light guide

1261‧‧‧入射面 1261‧‧‧Injection surface

1262‧‧‧出射面 1262‧‧‧Outlet

1263‧‧‧側面 1263‧‧‧ side

1264‧‧‧網點 1264‧‧‧ outlets

21‧‧‧DC-DC轉換模塊 21‧‧‧DC-DC converter module

22‧‧‧充電/放電模塊 22‧‧‧Charging/discharging module

23‧‧‧控制器 23‧‧‧ Controller

200‧‧‧照明裝置 200‧‧‧Lighting device

150‧‧‧照明模塊 150‧‧‧Lighting module

151‧‧‧金屬層 151‧‧‧metal layer

152‧‧‧半導體層 152‧‧‧Semiconductor layer

153‧‧‧發光層 153‧‧‧Lighting layer

1521‧‧‧P型半導體層 1521‧‧‧P type semiconductor layer

1523‧‧‧N型半導體層 1523‧‧‧N type semiconductor layer

1522‧‧‧光子激發層 1522‧‧‧Photon excitation layer

圖1係本技術方案實施例提供之太陽能供電裝置之示意圖。 FIG. 1 is a schematic diagram of a solar power supply device provided by an embodiment of the present technical solution.

圖2係本技術方案實施例提供之聚光模塊之導光體之示意圖。 FIG. 2 is a schematic diagram of a light guiding body of a concentrating module provided by an embodiment of the present technical solution.

圖3係本技術方案實施例提供之包括圖1所示之太陽能供電裝置之照明系統之示意圖。 FIG. 3 is a schematic diagram of an illumination system including the solar power supply device shown in FIG. 1 according to an embodiment of the present technical solution.

以下將結合實施例及附圖詳細說明本技術方案提供之太陽能供電裝置及包括該太陽能供電裝置之照明系統。 The solar power supply device provided by the technical solution and the illumination system including the solar power supply device will be described in detail below with reference to the embodiments and the accompanying drawings.

請參見圖1,本技術方案實施例提供太陽能供電裝置100包括發電模塊10、控制模塊20及儲能模塊30。控制模塊20分別與發電模塊10及儲能模塊30相連。 Referring to FIG. 1 , the solar power supply device 100 includes a power generation module 10 , a control module 20 , and an energy storage module 30 . The control module 20 is connected to the power generation module 10 and the energy storage module 30, respectively.

發電模塊10包括太陽能電池板11及設於太陽能電池板11上方且與太陽能電池板11相對設置之聚光模塊12。 The power generation module 10 includes a solar panel 11 and a concentrating module 12 disposed above the solar panel 11 and disposed opposite to the solar panel 11 .

太陽能電池板11包括第一電極層111、半導體結構層112及與第一電極層111極性相反之第二電極層113。第一電極層111具有第一表面1111及與第一表面1111相對之第二表面1112。第一表面1111 上依次形成有半導體結構層112及第二電極層113。 The solar panel 11 includes a first electrode layer 111, a semiconductor structure layer 112, and a second electrode layer 113 having a polarity opposite to that of the first electrode layer 111. The first electrode layer 111 has a first surface 1111 and a second surface 1112 opposite the first surface 1111. First surface 1111 A semiconductor structure layer 112 and a second electrode layer 113 are formed in this order.

第一電極層111之厚度大約於0.1μm至10μm之間,其材質選自銀、銅、鉬或鋁,亦可為鋁銅合金、銅鉬合金等合金材料。 The first electrode layer 111 has a thickness of about 0.1 μm to 10 μm, and the material thereof is selected from the group consisting of silver, copper, molybdenum or aluminum, and may be an alloy material such as an aluminum-copper alloy or a copper-molybdenum alloy.

半導體結構層112為三層結構,其包括P型半導體結構層1121、N型半導體結構層1123、以及位於P型半導體結構層1121與N型半導體結構層1123之間之P-N結層1122。 The semiconductor structure layer 112 is a three-layer structure including a P-type semiconductor structure layer 1121, an N-type semiconductor structure layer 1123, and a P-N junction layer 1122 between the P-type semiconductor structure layer 1121 and the N-type semiconductor structure layer 1123.

P型半導體結構層1121之材料可為P型非晶矽材料,尤其為P型含氫非晶矽材料,亦可為III-V族化合物或II-VI族化合物,特別係摻雜鋁、鉀、銦之半導體材料,如氮化鋁鉀或鋁砷化鎵。優選地,該P型半導體結構層1121之材料為P型非晶矽材料。非晶矽材料對光之吸收性比結晶矽材料強約120倍,所以於對光子吸收量要求相同之情況下,非晶矽材料製成之半導體層之厚度遠小於結晶矽材料製成之半導體層之厚度,且非晶矽材料對基板材質之要求更低。所以採用非晶矽材料不僅可節省大量之材料,亦使得製作大面積之太陽能電池成為可能。 The material of the P-type semiconductor structure layer 1121 may be a P-type amorphous germanium material, especially a P-type hydrogen-containing amorphous germanium material, or a III-V compound or a II-VI compound, especially doped aluminum and potassium. Indium semiconductor materials, such as aluminum aluminum nitride or aluminum gallium arsenide. Preferably, the material of the P-type semiconductor structure layer 1121 is a P-type amorphous germanium material. The amorphous germanium material is about 120 times stronger than the crystalline germanium material, so the thickness of the semiconductor layer made of the amorphous germanium material is much smaller than that of the crystalline germanium material when the photon absorption amount is the same. The thickness of the layer, and the amorphous germanium material has lower requirements on the substrate material. Therefore, the use of amorphous germanium materials not only saves a large amount of materials, but also makes it possible to produce large-area solar cells.

P-N結層1122用於將光子轉換成電子-孔穴對並形成勢壘電場,其材質可為結合性較好之III-V族化合物或I-III-VI族化合物,如碲化鎘、銅銦硒、銦鎵硒。 The PN junction layer 1122 is used for converting photons into electron-hole pairs and forming a barrier electric field, which may be a combination of a better combination of a III-V compound or a I-III-VI compound such as cadmium telluride or copper indium. Selenium, indium gallium selenium.

N型半導體結構層1123之材料可為N型非晶矽材料,特別係N型含氫非晶矽材料,亦可係III-V族化合物或II-VI族化合物,特別係摻雜氮、磷、砷之半導體材料,如氮化鉀或磷化銦鎵。 The material of the N-type semiconductor structural layer 1123 may be an N-type amorphous germanium material, in particular, an N-type hydrogen-containing amorphous germanium material, or a III-V compound or a II-VI compound, in particular, nitrogen and phosphorus doped. A semiconductor material of arsenic, such as potassium nitride or indium gallium phosphide.

半導體結構層112亦可為由P型半導體結構層1121及N型半導體結構層1123組成之兩層結構。 The semiconductor structure layer 112 may also be a two-layer structure composed of a P-type semiconductor structure layer 1121 and an N-type semiconductor structure layer 1123.

第二電極層113形成於N型半導體結構層1123,其包括透明導電層1131及與該透明導電層1131電接觸之金屬導電層1132。 The second electrode layer 113 is formed on the N-type semiconductor structure layer 1123, and includes a transparent conductive layer 1131 and a metal conductive layer 1132 in electrical contact with the transparent conductive layer 1131.

透明導電層1131形成於N型半導體結構層1123,其與N型半導體結構層1123形成歐姆接觸。透明導電層1131之材料為透明之金屬氧化物或金屬摻雜氧化物,如銦錫氧化物、氧化鋅、氧化錫、銦摻雜一氧化錫、錫摻雜三氧化二鎵、錫摻雜銀銦氧化物、銦錫氧化物、鋅摻雜三氧化二銦、銻摻雜二氧化錫、或鋁摻雜氧化鋅等。透明導電層1131之光吸收系數小,可讓更多太陽光透過。亦可於透明導電層1131進一步形成一層增透膜來提高太陽光之利用率。 The transparent conductive layer 1131 is formed on the N-type semiconductor structure layer 1123, which forms an ohmic contact with the N-type semiconductor structure layer 1123. The material of the transparent conductive layer 1131 is a transparent metal oxide or a metal doped oxide such as indium tin oxide, zinc oxide, tin oxide, indium doped tin oxide, tin doped gallium oxide, tin doped silver. Indium oxide, indium tin oxide, zinc-doped indium trioxide, antimony-doped tin dioxide, or aluminum-doped zinc oxide. The transparent conductive layer 1131 has a small light absorption coefficient and allows more sunlight to pass through. Further, an antireflection film may be further formed on the transparent conductive layer 1131 to improve the utilization of sunlight.

金屬導電層1132形成於透明導電層1131,其一般為梳狀結構,通常由非透光之金屬或金屬合金材料製成。 The metal conductive layer 1132 is formed on the transparent conductive layer 1131, which is generally a comb-like structure, and is usually made of a non-transmissive metal or metal alloy material.

請一併參閱圖1及圖2,本實施例中,聚光模塊12為一透鏡模塊,其包括鏡筒121及沿光軸設置於鏡筒121內之第一透鏡122、第二透鏡123、第一間隔體124、第二間隔體125及導光體126。聚光模塊12用於聚集太陽光至太陽能電池板11之金屬導電層1132,從而於不增加太陽能電池板數量之情況下成倍提高光伏效率。當然,根據太陽能電池板11之金屬導電層1132之尺寸,聚光模塊12還可包括複數透鏡模塊。 Referring to FIG. 1 and FIG. 2 , in this embodiment, the concentrating module 12 is a lens module, and includes a lens barrel 121 and a first lens 122 and a second lens 123 disposed in the lens barrel 121 along the optical axis. The first spacer 124, the second spacer 125, and the light guide 126. The concentrating module 12 is used to collect sunlight to the metal conductive layer 1132 of the solar panel 11, thereby multiplying the photovoltaic efficiency without increasing the number of solar panels. Of course, according to the size of the metal conductive layer 1132 of the solar panel 11, the concentrating module 12 may further include a plurality of lens modules.

第一透鏡122及第二透鏡123為球面透鏡或非球面透鏡,其間以互卡形式固定。第一透鏡122及第二透鏡123之間設有第一間隔體124。第一間隔體124可為本領域常見之光圈或間隔環。當然,第一透鏡122及第二透鏡123亦可不以互卡形式固定,而以透鏡模塊領域常見之形式固定於鏡筒121內。該第一透鏡122相對於該第二透鏡123遠離該太陽能電池板11,該第一透鏡122和該第二透鏡 123均包括弧形凸出部,該第一透鏡122的弧形凸出部包括朝向遠離該太陽能電池板11的方向突出的弧形外表面及朝向遠離該太陽能電池板11的方向突出的弧形內表面,該第二透鏡123的弧形凸出部包括朝向太陽能電池板11突出的弧形外表面及朝向太陽能電池板11突出的弧形內表面。 The first lens 122 and the second lens 123 are spherical lenses or aspherical lenses, and are fixed in a mutual card form therebetween. A first spacer 124 is disposed between the first lens 122 and the second lens 123. The first spacer 124 can be an aperture or spacer ring that is common in the art. Of course, the first lens 122 and the second lens 123 may not be fixed in a mutual card form, but may be fixed in the lens barrel 121 in a form commonly used in the field of lens modules. The first lens 122 is away from the solar panel 11 with respect to the second lens 123, the first lens 122 and the second lens Each of the 123 includes an arcuate projection having an arcuate outer surface that protrudes away from the solar panel 11 and an arc that protrudes away from the solar panel 11 The inner surface, the arcuate projection of the second lens 123 includes an arcuate outer surface that protrudes toward the solar cell panel 11 and an arcuate inner surface that protrudes toward the solar cell panel 11.

第二間隔體125設於第二透鏡123及導光體126之間,用於隔離第二透鏡123及導光體126,其可為本領域常見之光圈或間隔環。 The second spacer 125 is disposed between the second lens 123 and the light guide 126 for isolating the second lens 123 and the light guide 126, which may be an aperture or a spacer ring which is common in the art.

導光體126包括入射面1261、與入射面1261相對之出射面1262及設於入射面1261及出射面1262之間並與入射面1261及出射面1262相連之側面1263。入射面1261設置有複數網點1264。網點1264可為圓形、金字塔形、梯形或棱形結構。網點1264之設置使得入射面1261之折射率自入射面1261之中心向其邊緣逐漸增大,從而使得透過第二透鏡123各處之太陽光由於第二透鏡123之形狀而引起之折射率差值得以補償至同一值,光線自出射面1262以相同能量出射至太陽能電池板11,而避免太陽能電池板11表面各處接受之光子密度存有差異。當然,聚光模塊12亦可不包括導光體126,只要能聚集太陽光即可。 The light guide body 126 includes an incident surface 1261, an exit surface 1262 opposite to the incident surface 1261, and a side surface 1263 disposed between the incident surface 1261 and the exit surface 1262 and connected to the incident surface 1261 and the exit surface 1262. The entrance face 1261 is provided with a plurality of dots 1264. The dots 1264 can be circular, pyramidal, trapezoidal or prismatic. The dot 1264 is disposed such that the refractive index of the incident surface 1261 gradually increases from the center of the incident surface 1261 toward the edge thereof, so that the refractive index difference caused by the sunlight passing through the second lens 123 due to the shape of the second lens 123 To be compensated to the same value, the light exits the solar panel 11 with the same energy from the exit surface 1262, while avoiding differences in the photon density accepted across the surface of the solar panel 11. Of course, the concentrating module 12 may not include the light guide body 126 as long as it can collect sunlight.

控制模塊20用以控制太陽能電池板11將吸收之光能轉換為電能並將該電能存儲於儲能模塊30,其包括DC-DC轉換模塊21、充電/放電模塊22及控制器23。 The control module 20 is configured to control the solar panel 11 to convert the absorbed light energy into electrical energy and store the electrical energy in the energy storage module 30, which includes a DC-DC conversion module 21, a charging/discharging module 22, and a controller 23.

DC-DC轉換模塊21之輸入端與第一電極層111及第二電極層113電氣連接,用於根據充電/放電模塊之電壓將太陽能電池板轉化光能所得之電壓轉換為充電/放電模塊之電壓。DC-DC轉換模塊21之輸出端與充電/放電模塊及控制模塊23電氣連接,其將轉換後之 電壓輸入充電/放電模塊以便於後者對儲能模塊30充電或放電。 The input end of the DC-DC conversion module 21 is electrically connected to the first electrode layer 111 and the second electrode layer 113, and is configured to convert the voltage obtained by converting the solar panel into light energy according to the voltage of the charging/discharging module into a charging/discharging module. Voltage. The output of the DC-DC conversion module 21 is electrically connected to the charging/discharging module and the control module 23, which will be converted. The voltage is input to the charge/discharge module to facilitate charging or discharging of the energy storage module 30 by the latter.

充電/放電模塊22之輸入端與DC-DC轉換模塊21電氣連接,其輸出端與控制器23及儲能模塊30電氣連接。充電/放電模塊22用於根據控制器23之命令對儲能模塊30充電或放電。 The input end of the charging/discharging module 22 is electrically connected to the DC-DC conversion module 21, and the output end thereof is electrically connected to the controller 23 and the energy storage module 30. The charge/discharge module 22 is for charging or discharging the energy storage module 30 in accordance with a command from the controller 23.

控制器23分別與DC-DC轉換模塊21之輸出端、充電/放電模塊22及儲能模塊30電氣連接,用於根據儲能模塊30存儲之電量控制DC-DC轉換模塊21及充電/放電模塊22開啟或閉合。具體地,當儲能模塊30之儲電量為飽和狀態時,控制器23關閉DC-DC轉換模塊21,一旦儲能模塊30之儲電量為非飽及狀態且有太陽光照射太陽能電池板11時,控制器23啟動DC-DC轉換模塊21,從而控制充電/放電模塊22對儲能模塊30進行充電,直至儲能模塊30之儲電量飽和為止。 The controller 23 is electrically connected to the output end of the DC-DC conversion module 21, the charging/discharging module 22, and the energy storage module 30, respectively, for controlling the DC-DC conversion module 21 and the charging/discharging module according to the power stored in the energy storage module 30. 22 open or close. Specifically, when the storage capacity of the energy storage module 30 is in a saturated state, the controller 23 turns off the DC-DC conversion module 21, once the storage capacity of the energy storage module 30 is non-saturated and there is sunlight illuminating the solar panel 11 The controller 23 activates the DC-DC conversion module 21 to control the charging/discharging module 22 to charge the energy storage module 30 until the storage capacity of the energy storage module 30 is saturated.

儲能模塊30與控制器23及充電/放電模塊22電氣連接,其將儲能模塊30之儲電量狀態傳輸至控制器23,以使控制器23根據儲電量狀態控制DC-DC轉換模塊21之開啟和閉合。 The energy storage module 30 is electrically connected to the controller 23 and the charging/discharging module 22, and transmits the state of the stored electricity of the energy storage module 30 to the controller 23, so that the controller 23 controls the DC-DC conversion module 21 according to the state of the stored electricity state. Open and close.

本實施例之太陽能供電裝置100由於設置有能聚集太陽光之聚光裝置12,使得不僅直接照射到太陽能電池板11之太陽光轉換為電能,還能使得照射到聚光裝置12之太陽光透過聚光裝置12後照射到太陽能電池板11轉換為電能,從而於不增加太陽能電池板數量之情況下,成倍提高光伏效率,節約成本。 The solar power supply device 100 of the present embodiment is provided with a concentrating device 12 capable of collecting sunlight, so that not only sunlight directly irradiated to the solar panel 11 is converted into electric energy, but also sunlight transmitted to the concentrating device 12 can be transmitted. After the concentrating device 12 is irradiated to the solar panel 11 to be converted into electric energy, the photovoltaic efficiency is doubled and the cost is saved without increasing the number of solar panels.

本實施例之太陽能供電裝置100可應用於複數領域之供電,如對照明燈源、電子器械、可攜式裝置進行供電。當以本實施例提供之太陽能供電裝置100為供電設備時,只需將其儲能模塊30與終 端電器直接電氣連接即可。以下以照明為例,說明本技術方案實施例提供之包括太陽能供電裝置100之照明系統200。 The solar power supply device 100 of the embodiment can be applied to power supply in a plurality of fields, such as power supply for an illumination source, an electronic device, and a portable device. When the solar power supply device 100 provided in this embodiment is a power supply device, only the energy storage module 30 and the end thereof are required. The terminal can be directly electrically connected. Hereinafter, the illumination system 200 including the solar power supply device 100 provided by the embodiment of the present technical solution is illustrated by taking illumination as an example.

請參見圖3,該照明裝置200包括太陽能供電裝置100及照明模塊150。其中,照明模塊150與太陽能供電裝置100之儲能模塊30相連,其開啟及閉合可由控制器23控制,亦可由單獨設置之開關(圖未示)控制,由此使得照明模塊150發射照明光線。 Referring to FIG. 3 , the lighting device 200 includes a solar power supply device 100 and a lighting module 150 . The illumination module 150 is connected to the energy storage module 30 of the solar power supply device 100. The opening and closing thereof can be controlled by the controller 23, or can be controlled by a separately provided switch (not shown), thereby causing the illumination module 150 to emit illumination light.

照明模塊150為LED模塊,其包括依次層疊之金屬層151、半導體層152及發光層153。其中,金屬層151與儲能模塊30之正極相連,半導體層152與儲能模塊30之負極相連。半導體層152為三層結構,其包括P型半導體層1521、N型半導體層1523、以及位於P型半導體層1521與N型半導體層1523之間之光子激發層1522。 The illumination module 150 is an LED module including a metal layer 151, a semiconductor layer 152, and a light-emitting layer 153 which are sequentially stacked. The metal layer 151 is connected to the anode of the energy storage module 30, and the semiconductor layer 152 is connected to the cathode of the energy storage module 30. The semiconductor layer 152 has a three-layer structure including a P-type semiconductor layer 1521, an N-type semiconductor layer 1523, and a photon excitation layer 1522 between the P-type semiconductor layer 1521 and the N-type semiconductor layer 1523.

P型半導體層1521之材料可為P型非晶矽材料,尤其係P型含氫非晶矽材料,亦可係III-V族化合物或II-VI族化合物,特別係摻雜鋁、鉀、銦之半導體材料,如氮化鋁鉀或鋁砷化鎵。優選地,該P型半導體層1521之材料為P型非晶矽材料。 The material of the P-type semiconductor layer 1521 may be a P-type amorphous germanium material, especially a P-type hydrogen-containing amorphous germanium material, or a III-V compound or a II-VI compound, in particular, doped with aluminum, potassium, A semiconductor material of indium, such as aluminum aluminum nitride or aluminum gallium arsenide. Preferably, the material of the P-type semiconductor layer 1521 is a P-type amorphous germanium material.

光子激發層1522用於將電子-孔穴對形成勢壘電場並將其轉換成光子。 Photon excitation layer 1522 is used to form an electron-hole pair to form a barrier electric field and convert it into photons.

N型半導體層1523與儲能模塊30之負極電氣連接,其材料可為N型非晶矽材料,特別係N型含氫非晶矽材料,亦可係III-V族化合物或II-VI族化合物,特別係摻雜氮、磷、砷之半導體材料,如氮化鉀或磷化銦鎵。 The N-type semiconductor layer 1523 is electrically connected to the negative electrode of the energy storage module 30, and the material thereof may be an N-type amorphous germanium material, in particular, an N-type hydrogen-containing amorphous germanium material, or a III-V compound or a II-VI group. The compound, in particular, is a semiconductor material doped with nitrogen, phosphorus or arsenic, such as potassium nitride or indium gallium phosphide.

發光層153形成於N型半導體層1523上,其與N型半導體層1523形成歐姆接觸。發光層153之材料為透明之金屬氧化物或金屬摻雜 氧化物,如銦錫氧化物、氧化鋁、氧化鋅、氧化錫、銦摻雜一氧化錫、錫摻雜三氧化二鎵、錫摻雜銀銦氧化物、銦錫氧化物、鋅摻雜三氧化二銦、銻摻雜二氧化錫或鋁摻雜氧化鋅等。 The light emitting layer 153 is formed on the N type semiconductor layer 1523, which forms an ohmic contact with the N type semiconductor layer 1523. The material of the light-emitting layer 153 is transparent metal oxide or metal doping Oxides such as indium tin oxide, aluminum oxide, zinc oxide, tin oxide, indium doped tin oxide, tin doped gallium oxide, tin doped silver indium oxide, indium tin oxide, zinc doped three Indium oxide oxide, antimony doped tin dioxide or aluminum doped zinc oxide.

綜上所述,本發明確已符合發明專利之要件,遂依法提出專利申請。惟,以上所述者僅為本發明之較佳實施方式,自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝之人士援依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。 In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.

100‧‧‧太陽能供電裝置 100‧‧‧Solar power supply unit

10‧‧‧發電模塊 10‧‧‧Power Module

20‧‧‧控制模塊 20‧‧‧Control module

30‧‧‧儲能模塊 30‧‧‧ Energy storage module

11‧‧‧太陽能電池板 11‧‧‧Solar panels

12‧‧‧聚光裝置 12‧‧‧ concentrating device

111‧‧‧第一電極層 111‧‧‧First electrode layer

112‧‧‧半導體結構層 112‧‧‧Semiconductor structural layer

113‧‧‧第二電極層 113‧‧‧Second electrode layer

1111‧‧‧第一表面 1111‧‧‧ first surface

1112‧‧‧第二表面 1112‧‧‧ second surface

1121‧‧‧P型半導體結構層 1121‧‧‧P type semiconductor structural layer

1123‧‧‧N型半導體結構層 1123‧‧‧N type semiconductor structural layer

1122‧‧‧P-N結層 1122‧‧‧P-N layer

1131‧‧‧透明導電層 1131‧‧‧Transparent conductive layer

1132‧‧‧金屬導電層 1132‧‧‧Metal conductive layer

121‧‧‧鏡筒 121‧‧‧Mirror tube

122‧‧‧第一透鏡 122‧‧‧ first lens

123‧‧‧第二透鏡 123‧‧‧second lens

124‧‧‧第一間隔體 124‧‧‧First spacer

125‧‧‧第二間隔體 125‧‧‧Second spacer

126‧‧‧導光體 126‧‧‧Light guide

1261‧‧‧入射面 1261‧‧‧Injection surface

1262‧‧‧出射面 1262‧‧‧Outlet

1264‧‧‧網點 1264‧‧‧ outlets

21‧‧‧DC-DC轉換模塊 21‧‧‧DC-DC converter module

22‧‧‧充電/放電模塊 22‧‧‧Charging/discharging module

23‧‧‧控制器 23‧‧‧ Controller

Claims (9)

一種太陽能供電裝置,其包括發電模塊、控制模塊及儲能模塊,該控制模塊分別與發電模塊及儲能模塊相連,用以控制發電模塊將光能轉換為電能並將電能存儲於儲能模塊,其改進在於,該發電模塊包括太陽能電池板及聚光模塊,該聚光模塊包括至少一透鏡模塊,其與太陽能電池板相對,用於聚集太陽光至太陽能電池板,每個透鏡模塊包括鏡筒、沿光軸設於鏡筒內之第一透鏡、第二透鏡、第一間隔體、第二間隔體及導光體,該第一間隔體設於第一透鏡及第二透鏡之間,該第一透鏡及第二透鏡為球面透鏡或非球面透鏡,該第二間隔體設於第二透鏡及導光體之間。 A solar power supply device includes a power generation module, a control module and an energy storage module. The control module is respectively connected to the power generation module and the energy storage module, and is configured to control the power generation module to convert the light energy into electrical energy and store the electrical energy in the energy storage module. The improvement is that the power generation module comprises a solar panel and a concentrating module, and the concentrating module comprises at least one lens module opposite to the solar panel for collecting sunlight to the solar panel, and each lens module comprises a lens barrel a first lens, a second lens, a first spacer, a second spacer, and a light guide disposed in the lens barrel along an optical axis. The first spacer is disposed between the first lens and the second lens. The first lens and the second lens are spherical lenses or aspherical lenses, and the second spacer is disposed between the second lens and the light guide. 如申請專利範圍第1項所述之太陽能供電裝置,其中,該第一透鏡相對於該第二透鏡遠離該太陽能電池板,該第一透鏡和該第二透鏡均包括弧形凸出部,該第一透鏡的弧形凸出部包括朝向遠離該太陽能電池板的方向突出的弧形外表面及朝向遠離該太陽能電池板的方向突出的弧形內表面,該第二透鏡的弧形凸出部包括朝向太陽能電池板突出的弧形外表面及朝向太陽能電池板突出的弧形內表面。 The solar power supply device of claim 1, wherein the first lens is away from the solar panel relative to the second lens, and the first lens and the second lens each include an arcuate protrusion. The arcuate projection of the first lens includes an arcuate outer surface that protrudes away from the solar panel and an arcuate inner surface that protrudes away from the solar panel, and the arcuate projection of the second lens A curved outer surface that protrudes toward the solar panel and an arcuate inner surface that protrudes toward the solar panel are included. 如申請專利範圍第1項所述之太陽能供電裝置,其中,該導光體包括入射面及與入射面相對之出射面,該出射面與太陽能電池板相對設置,該入射面設有複數網點。 The solar power supply device according to claim 1, wherein the light guide body comprises an incident surface and an exit surface opposite to the incident surface, and the exit surface is disposed opposite to the solar panel, and the incident surface is provided with a plurality of dots. 如申請專利範圍第3項所述之太陽能供電裝置,其中,該入射面之折射率自入射面之中心向其邊緣遞增。 The solar power supply device of claim 3, wherein the refractive index of the incident surface increases from a center of the incident surface to an edge thereof. 如申請專利範圍第1項所述之太陽能供電裝置,其中,該控制模塊包括DC-DC轉換模塊、充電/放電模塊及控制器,該DC-DC轉換模塊與太陽能 電池板相連,用於將太陽能電池板轉換之電能電壓轉為充電/放電模塊所需電壓,該充電/放電模塊與DC-DC轉換模塊、控制器及儲能模塊相連,該控制器與DC-DC轉換模塊、充電/放電模塊及儲能模塊相連,用於根據儲能模塊之儲電量控制DC-DC轉換模塊開啟或閉合,從而控制充電/放電模塊對儲能模塊充電。 The solar power supply device of claim 1, wherein the control module comprises a DC-DC conversion module, a charging/discharging module and a controller, and the DC-DC conversion module and the solar energy The battery board is connected to convert the energy voltage converted by the solar panel into a voltage required for the charging/discharging module, and the charging/discharging module is connected with the DC-DC conversion module, the controller and the energy storage module, and the controller and the DC- The DC conversion module, the charging/discharging module and the energy storage module are connected, and the DC-DC conversion module is controlled to be turned on or off according to the storage capacity of the energy storage module, thereby controlling the charging/discharging module to charge the energy storage module. 如申請專利範圍第1項所述之太陽能供電裝置,其中,該太陽能電池板包括依此層疊之第一電極層、半導體結構層及與第一電極層極性相反之第二電極層。 The solar power supply device of claim 1, wherein the solar panel comprises a first electrode layer, a semiconductor structure layer, and a second electrode layer having a polarity opposite to that of the first electrode layer. 如申請專利範圍第6項所述之太陽能供電裝置,其中,該半導體結構層包括依次層疊於第一電極層之P型半導體結構層、N型半導體結構層以及位於P型半導體結構層與N型半導體結構層之間之P-N結層。 The solar power supply device of claim 6, wherein the semiconductor structure layer comprises a P-type semiconductor structure layer, an N-type semiconductor structure layer, and a P-type semiconductor structure layer and an N-type layer which are sequentially stacked on the first electrode layer. A PN junction layer between semiconductor structural layers. 一種照明系統,其包括照明模塊,其中,該照明系統進一步包括如申請專利範圍第1~7任一項所述之太陽能供電裝置,該照明模塊與儲能模塊電氣相連。 A lighting system comprising a lighting module, wherein the lighting system further comprises a solar power supply device according to any one of claims 1 to 7, the lighting module being electrically connected to the energy storage module. 如申請專利範圍第8項所述之照明系統,其中,該照明模塊包括依次層疊之金屬層、半導體層及發光層,該儲能模塊具有正極及負極,該金屬層及半導體層分別連接於儲能模塊之正極及負極。 The illumination system of claim 8, wherein the illumination module comprises a metal layer, a semiconductor layer and a light-emitting layer which are sequentially stacked, the energy storage module has a positive electrode and a negative electrode, and the metal layer and the semiconductor layer are respectively connected to the storage The positive and negative poles of the module.
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