TWI451147B - Optoelectronic module - Google Patents
Optoelectronic module Download PDFInfo
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- TWI451147B TWI451147B TW101111501A TW101111501A TWI451147B TW I451147 B TWI451147 B TW I451147B TW 101111501 A TW101111501 A TW 101111501A TW 101111501 A TW101111501 A TW 101111501A TW I451147 B TWI451147 B TW I451147B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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Description
本發明係關於光電模組,特別係一種整合覆晶封裝結構與矽穿孔結構之光電模組。The invention relates to a photoelectric module, in particular to a photoelectric module integrating a flip chip package structure and a 矽 perforated structure.
電子裝置中通常會配設一連接器藉此與一其他元件電性連接,以使電子裝置與他裝置溝通或傳輸訊號。然而,隨著科技的進步,電子裝置朝向輕薄化之趨勢發展,以傳統模具所製作之連接器塑膠本體以及應用沖壓技術所製作之導電端子即不易裝設於輕薄化之電子裝置中。A connector is usually provided in the electronic device to electrically connect with another component to enable the electronic device to communicate with or transmit signals to other devices. However, with the advancement of technology, electronic devices are moving toward a trend of thinning and thinning. The connector plastic body made by the conventional mold and the conductive terminals made by applying the stamping technology are not easily installed in the thin and light electronic device.
以光電耦合元件作為光電轉換與電信號傳輸上的基本設計,在目前的各種電路構造、電子裝置或相關系統中係已得到了廣泛的應用。在光電耦合元件的相關單元的尺寸設計均較小的條件之下,將光纖組裝或植入至耦光裝置內以將光信號導出或導入耦光裝置以進行傳輸,便具有相當的難度與不便,甚至會產生誤差,進而使光信號無法準確傳遞至光纖中而影響傳輸。再者,光纖係需在耦光裝置內作固定式之組裝或植入,使得除了無法提供反覆的插拔與組裝外,所外露的光纖後端亦會形成線狀之延伸而造成使用上的不便。The use of optocoupler elements as the basic design for photoelectric conversion and electrical signal transmission has been widely used in various current circuit configurations, electronic devices or related systems. Under the condition that the size of the relevant unit of the optocoupler element is small, it is quite difficult and inconvenient to assemble or implant the optical fiber into the light coupling device to conduct or introduce the optical signal to the light coupling device for transmission. Even errors can occur, which in turn can not accurately transmit optical signals to the fiber and affect transmission. Furthermore, the optical fiber system needs to be fixedly assembled or implanted in the light coupling device, so that in addition to the inability to provide repeated insertion and removal and assembly, the exposed fiber rear end will also form a linear extension and cause use. inconvenient.
另外,一種矽基微光學平台(silicon optical bench)之光學連結技術係可以作為板對板或USB 3.0之光學連結技術的一個應用平台。在架構上,此矽基微光學平台之光學連結收發模組包含有:單石積體化之45°微反射面、置放光纖陣列之V型凹槽、具2.5GHz之高頻傳輸線與錫金焊料等,並可經由適當之光學對位而將面射型雷射與光偵測器封裝至該微光學平台上。In addition, an optical bonding technology of a silicon optical bench can be used as an application platform for board-to-board or USB 3.0 optical bonding technology. In terms of architecture, the optical connection transceiver module of the 矽-based micro-optical platform comprises: a 45-degree micro-reflective surface of a monolithic integrated body, a V-shaped groove for placing an optical fiber array, a high-frequency transmission line with 2.5 GHz, and a tin-gold solder. Etc., and a surface-emitting laser and photodetector can be packaged onto the micro-optical platform via appropriate optical alignment.
此外,目前已發展將晶片與光雷射整合於矽基微光學平台之上;惟其晶片與光電元件(面射型雷射與光偵測器等)之間通常係透過焊接線(wire bonding)而作電性連接。由於焊接線之本質為與晶片或光電元件阻抗不匹配的介質,一般為減少高頻電訊號在傳遞上的能量損耗或訊號失真,會盡可能縮短焊接線線長。然而,在更高速的訊號傳遞系統中,仍將面臨因電桿效應隨頻率增加而迫使阻抗值過大,或者通道與通道間的串音(cross-talk)雜訊,都會引響元件之間的傳輸速度。In addition, wafers and optical lasers have been developed to be integrated on the ruthenium-based micro-optical platform; however, the wafers and the optoelectronic components (face-emitting lasers and photodetectors, etc.) are usually passed through wire bonding. And for electrical connection. Since the nature of the soldering line is a medium that does not match the impedance of the wafer or the photovoltaic element, generally the power loss or signal distortion of the high-frequency electrical signal is reduced, and the length of the welding line is shortened as much as possible. However, in higher-speed signal transmission systems, there will still be a situation in which the impedance value is too large due to the increase in frequency due to the pole effect, or cross-talk noise between the channel and the channel will illuminate between the components. transfer speed.
再者,利用矽穿孔(through silicon via,TSV)於中介層中來傳遞電訊號,雖可以避免焊接線的阻抗問題,但其結構的可靠度問題(reliability issue)仍待驗證。此外,針對25Gbps或以上之高頻傳輸的光電模組,其光電元件(如光偵測器)的主動收光區將大為縮小,故若光電元件之光束耦合效率差,則無法滿足光利用預算(optical power budget)的需求。Furthermore, the use of through silicon vias (TSVs) to transfer electrical signals in the interposer can avoid the impedance problem of the bonding wires, but the reliability issue of the structure remains to be verified. In addition, for optoelectronic modules with high-frequency transmission of 25 Gbps or higher, the active light-receiving area of the photoelectric elements (such as photodetectors) will be greatly reduced, so if the beam coupling efficiency of the photoelectric elements is poor, the light utilization cannot be satisfied. The need for an optical power budget.
基於上面所述之缺點得知上述光電連接器之效能尚有待進一步提升之處。因此,本發明提供一種板上光電模組。Based on the above-mentioned shortcomings, it is known that the performance of the above-mentioned photoelectric connector needs to be further improved. Accordingly, the present invention provides an on-board photovoltaic module.
鑒於上述之缺點,本發明之一目的在於提供一光電模組,包含穿孔結構以利於電訊號得以透過其中傳輸以及光訊號經由其中傳遞。In view of the above disadvantages, it is an object of the present invention to provide a photovoltaic module comprising a perforated structure for facilitating transmission of electrical signals therethrough and for transmission of optical signals therethrough.
本發明之另一目的在於提供一光電模組,包含矽中介層(silicon interposer)結構,由於矽中介層之穿孔結構中無需傳遞電信號,因此可以避免由於矽穿孔側壁粗糙所造成的漏電流問題。換言之,矽中介層結構不會產生可靠度問題。Another object of the present invention is to provide a photovoltaic module comprising a silicon interposer structure. Since no electrical signals need to be transmitted in the perforated structure of the interposer, leakage current problems caused by rough sidewalls of the crucible can be avoided. . In other words, the 矽 interposer structure does not create reliability problems.
本發明之再一目的在於提供一光電模組,由於此光電模組結構中無需焊接線,可以降低阻抗產生的問題,而提昇高頻效能。A further object of the present invention is to provide a photovoltaic module. Since no wiring is required in the structure of the photovoltaic module, the problem of impedance generation can be reduced, and the high frequency performance can be improved.
本發明之又一目的在於提供一光電模組,以利於連接一光纖連接器(fiber connector),亦即成為一可插拔模組化之光電模組。Another object of the present invention is to provide a photovoltaic module for facilitating connection of a fiber connector, that is, a pluggable modular photovoltaic module.
本發明提供之光電模組,利用表面黏著(surface mountable)製程,因此無需高速電插座(electrical socket)與外罩(cage)。The photoelectric module provided by the invention utilizes a surface mountable process, so that no high-speed electrical socket and a cage are needed.
本發明之一實施例提供一種光電模組,包含一中介層,具有一第一上表面、一第一下表面及一第一穿孔結構,其中第一上表面與第一下表面相對,第一穿孔結構由第一上表面穿過中介層至第一下表面;一光電元件,設置於中介層之第一下表面之上側,其中光電元件適於經由第一穿孔結構提供或接收一光訊號;以及一調光部件,設置於中介層之第一上表面之上側,並位於光訊號之傳遞路徑上,用以調整光訊號之光形。An embodiment of the present invention provides an optoelectronic module including an interposer having a first upper surface, a first lower surface, and a first perforation structure, wherein the first upper surface is opposite to the first lower surface, first The perforated structure is disposed from the first upper surface through the interposer to the first lower surface; a photovoltaic element is disposed on the upper side of the first lower surface of the interposer, wherein the optoelectronic component is adapted to provide or receive an optical signal via the first perforated structure; And a dimming component disposed on the upper side of the first upper surface of the interposer and located on the transmission path of the optical signal for adjusting the light shape of the optical signal.
本發明之一實施例之光電模組更包括一第一凹槽結構形成於中介層之第一上表面,其中調光部件設置於第一凹槽結構中,且第一穿孔結構由第一凹槽結構之底面穿過中介層至第一下表面;一基板,具有一第二上表面、一第二下表面、一第二穿孔結構及一導電材料,其中光電元件位於中介層與基板之間,第二上表面面向中介層之第一下表面,第二穿孔結構由第二上表面穿過基板至第二下表面,且導電材料填入第二穿孔結構中;更包括一第二凹槽結構形成於基板或中介層,其中光電元件設置於第二凹槽結構之中,以及至少一控制單元,設置於基板之第二上表面上,且電性連接導電材料及光電元件,以控制光電元件;更包括一第一導電圖案,形成於基板之第二上表面之上,一第二導電圖案,形成於中介層之第一下表面之上;更包括一上蓋與一定位結構,上蓋覆蓋中介層與光電元件,定位結構形成於上蓋之內表面與中介層之第一上表面;更包括一填充材料設置於調光部件與光電元件之間並填入於第一穿孔結構中。The photovoltaic module of an embodiment of the present invention further includes a first recess structure formed on the first upper surface of the interposer, wherein the dimming member is disposed in the first recess structure, and the first perforated structure is formed by the first recess The bottom surface of the groove structure passes through the interposer to the first lower surface; a substrate having a second upper surface, a second lower surface, a second perforated structure and a conductive material, wherein the photovoltaic element is located between the interposer and the substrate a second upper surface facing the first lower surface of the interposer, the second perforated structure passing through the substrate from the second upper surface to the second lower surface, and the conductive material is filled into the second perforated structure; further comprising a second recess The structure is formed on the substrate or the interposer, wherein the photoelectric element is disposed in the second groove structure, and at least one control unit is disposed on the second upper surface of the substrate, and electrically connected to the conductive material and the photoelectric element to control the photoelectric The component further includes a first conductive pattern formed on the second upper surface of the substrate, and a second conductive pattern formed on the first lower surface of the interposer; further comprising an upper cover and a positioning structure, A cover covering the interposer with the photovoltaic element, positioning structure formed in the first cover surface and the upper surface of the interposer; further comprising a filler material disposed between the light modulation element and the photoelectric member and filled in the first perforated structure.
綜合上述,本發明之實施例提出一種新的光電模組結構,將中介層與調光部件及穿孔結構進行整合,使得控制單元與光電元件整合至單一基板上。In summary, the embodiment of the present invention proposes a new photovoltaic module structure, which integrates the interposer with the dimming component and the perforated structure, so that the control unit and the optoelectronic component are integrated on a single substrate.
在另一實施例中,由於穿孔結構及其中之導電材料,因此對於控制單元與光電元件無須打線製程便可完成模組的構裝,在高頻特性、高速傳輸、元件組裝速度上獲得提升。In another embodiment, due to the perforated structure and the conductive material therein, the module can be assembled without the need for a wire-bonding process for the control unit and the photovoltaic element, and the high-frequency characteristics, high-speed transmission, and component assembly speed are improved.
本發明將配合實施例與隨附之圖式詳述於下。應可理解者為本發明中所有之實施例僅為例示之用,並非用以限制。因此除文中之實施例外,本發明亦可廣泛地應用在其他實施例中。且本發明並不受限於任何實施例,應以隨附之申請專利範圍及其同等領域而定。The invention will be described in conjunction with the embodiments and the accompanying drawings. It is to be understood that all of the embodiments of the invention are illustrative and not intended to be limiting. Therefore, the invention may be applied to other embodiments in addition to the embodiments described herein. The invention is not limited to any embodiment, but should be determined by the scope of the appended claims and their equivalents.
第一圖顯示為根據本發明之一實施例之具覆晶封裝結構之光電模組之示意圖。在本實施例中,光電模組10可以作為微型化被動式光連結發射端或接收端,或者整合發射與接收端成為一光收發模組(transceiver module),光電模組10包含基板100、導電凸塊(solder bumps)102與102a、導電圖案(condcutive pattern)103與104、光電元件105、中介層(interposer)106、控制晶片107與108、上蓋(cover)109與一調光部件110。舉例而言,基板100包含但不限定為陶瓷基板(ceramic laminate)、矽基板或印刷電路板;中介層106包含但不限定為半導體層。The first figure shows a schematic diagram of a photovoltaic module with a flip chip package structure in accordance with an embodiment of the present invention. In this embodiment, the optoelectronic module 10 can be used as a miniaturized passive optical connection transmitting end or receiving end, or the integrated transmitting and receiving end can be an optical transceiver module. The optoelectronic module 10 includes the substrate 100 and the conductive convex portion. Solder bumps 102 and 102a, conductive patterns 103 and 104, photovoltaic elements 105, interposer 106, control wafers 107 and 108, a cover 109 and a light modulating member 110. For example, the substrate 100 includes, but is not limited to, a ceramic laminate, a germanium substrate, or a printed circuit board; the interposer 106 includes, but is not limited to, a semiconductor layer.
中介層106具有一上表面106a、一下表面106b、一穿孔結構106c及一凹槽結構106d,其中上表面106a與下表面106b相對,凹槽結構106d設置於上表面106a以利於調光部件110配置於其中,而穿孔結構106c由凹槽結構106d之底面穿過中介層106至下表面106b。上表面106a與下表面106b係指中介層的整體結構之上表面與下表面。光電元件105設置於中介層106之下表面106b之下側,且光電元件105適於經由穿孔結構106c提供或接收一光訊號。調光部件110,設置於中介層106之上表面106a之上側,並位於光訊號之傳遞路徑上。具體而言,光電元件105可配置以對(應)準於穿孔結構106c以及調光部件110,以利於光電元件105所發出之光得以通過調光部件110而傳遞至光電模組10之外部。在本實施例中,調光部件110例如為微透鏡陣列(micro lens array)。The interposer 106 has an upper surface 106a, a lower surface 106b, a perforated structure 106c and a recess structure 106d. The upper surface 106a is opposite to the lower surface 106b. The recess structure 106d is disposed on the upper surface 106a to facilitate the configuration of the dimming component 110. Therein, the perforated structure 106c passes through the interposer 106 to the lower surface 106b from the bottom surface of the recess structure 106d. The upper surface 106a and the lower surface 106b refer to the upper surface and the lower surface of the overall structure of the interposer. The optoelectronic component 105 is disposed on the underside of the lower surface 106b of the interposer 106, and the optoelectronic component 105 is adapted to provide or receive an optical signal via the via structure 106c. The dimming member 110 is disposed on the upper side of the upper surface 106a of the interposer 106 and is located on the transmission path of the optical signal. In particular, the optoelectronic component 105 can be configured to be aligned with the perforated structure 106c and the dimming component 110 to facilitate the transmission of light emitted by the optoelectronic component 105 to the exterior of the optoelectronic module 10 through the dimming component 110. In the present embodiment, the dimming member 110 is, for example, a micro lens array.
基板100具有一凹槽結構100a、一上表面100b、一下表面100c、一穿孔結構101及一導電材料101a,其中上表面100b與下表面100c相對且基板100之上表面100b面向中介層106之下表面106b,凹槽結構100a設置於基板100之上表面100b以利於光電元件105配置於其中,即光電元件105位於中介層106與基板100之間。穿孔結構101由上表面100b穿過基板100至下表面100c,穿孔結構101中例如填滿導電材料101a以形成矽穿孔。控制晶片107與108設置於基板100之上表面100b上,且電性連接矽穿孔之導電材料101a及光電元件105。具體而言,導電圖案103係形成於基板100之上表面100b上,導電圖案104係形成於中介層106之下表面106b上。而導電凸塊102係形成於控制晶片107,108與基板100之間,亦即導電凸塊102係形成於基板100之上表面100b以及控制晶片107與108之下表面;導電凸塊102a係形成於中介層106與基板100之間,亦即導電凸塊102a係形成於基板100之上表面100b以及中介層106之下表面106b。在本實施例中,位於控制晶片107與108之下表面的導電凸塊102可分別直接電性連接控制晶片107與108。位於中介層106之下表面106b的導電凸塊102a係分別透過導電圖案103與導電凸塊102而電性連接控制晶片108,以及透過導電圖案104電性連接光電元件105之焊接墊105a。換言之,控制晶片107與108係透過導電凸塊102、導電圖案103、導電凸塊102a與導電圖案104而電性連接光電元件105,且控制晶片107與108係透過導電凸塊102而電性連接其下的基板100之矽穿孔中的導電材料101a。因此,在本實施例中,光電元件105與控制晶片107、108之間無需焊接線。另外,導電凸塊102、102a之間距設定會依據基板100的精度要求而定。The substrate 100 has a groove structure 100a, an upper surface 100b, a lower surface 100c, a perforated structure 101 and a conductive material 101a, wherein the upper surface 100b is opposite to the lower surface 100c and the upper surface 100b of the substrate 100 faces the interposer 106. The surface 106b, the recess structure 100a is disposed on the upper surface 100b of the substrate 100 to facilitate the arrangement of the photovoltaic element 105 therein, that is, the photovoltaic element 105 is located between the interposer 106 and the substrate 100. The perforated structure 101 passes through the upper surface 100b through the substrate 100 to the lower surface 100c, and the perforated structure 101 is filled, for example, with a conductive material 101a to form a crucible perforation. The control wafers 107 and 108 are disposed on the upper surface 100b of the substrate 100, and are electrically connected to the perforated conductive material 101a and the photovoltaic element 105. Specifically, the conductive pattern 103 is formed on the upper surface 100b of the substrate 100, and the conductive pattern 104 is formed on the lower surface 106b of the interposer 106. The conductive bumps 102 are formed between the control wafers 107, 108 and the substrate 100, that is, the conductive bumps 102 are formed on the upper surface 100b of the substrate 100 and the lower surfaces of the control wafers 107 and 108; the conductive bumps 102a are formed in the intermediate Between the layer 106 and the substrate 100, that is, the conductive bumps 102a are formed on the upper surface 100b of the substrate 100 and the lower surface 106b of the interposer 106. In the present embodiment, the conductive bumps 102 on the lower surfaces of the control wafers 107 and 108 can be directly electrically connected to the control wafers 107 and 108, respectively. The conductive bumps 102a located on the lower surface 106b of the interposer 106 are electrically connected to the control wafer 108 through the conductive patterns 103 and the conductive bumps 102, and electrically connected to the solder pads 105a of the photovoltaic elements 105 through the conductive patterns 104. In other words, the control wafers 107 and 108 are electrically connected to the photovoltaic element 105 through the conductive bumps 102, the conductive patterns 103, the conductive bumps 102a and the conductive patterns 104, and the control wafers 107 and 108 are electrically connected through the conductive bumps 102. The conductive material 101a in the perforation of the substrate 100 under it. Therefore, in the present embodiment, a bonding wire is not required between the photovoltaic element 105 and the control wafers 107, 108. In addition, the setting of the distance between the conductive bumps 102 and 102a depends on the accuracy requirements of the substrate 100.
上述之導電圖案103之形成或配置係從中介層106之下往外延伸至控制晶片107與108之下,可以使得光電元件105之電訊號往中介層106之二側之外傳遞與接收,下表面接腳(例如導電凸塊102a)被擴散式散出至中介層106所覆蓋面積之外,以提供其他裝置與之有較好之連接,並可以減低接腳間之電磁干擾。控制晶片107與108配置於中介層106之外側,且控制晶片107與108直接配置於基板100之上,因此得以減低中介層106之面積大小。The formation or arrangement of the conductive patterns 103 described above extends from under the interposer 106 to the underside of the control wafers 107 and 108, so that the electrical signals of the photovoltaic elements 105 can be transmitted and received outside the two sides of the interposer 106, as shown in the following table. The surface pins (e.g., conductive bumps 102a) are diffused out of the area covered by the interposer 106 to provide better connections to other devices and to reduce electromagnetic interference between the pins. The control wafers 107 and 108 are disposed on the outer side of the interposer 106, and the control wafers 107 and 108 are directly disposed on the substrate 100, thereby reducing the size of the interposer 106.
中介層106包含但不限定為一矽中介層,其它矽之外的材料亦可以作為中介層的材料。對於矽中介層而言,透過微影與蝕刻製程所完成的結構具有極佳的精準度,因此可以精準的完成光電元件105、調光部件110與上蓋109之封裝。上蓋109係用以覆蓋中介層106與光電元件105且與基板100接合。The interposer 106 includes, but is not limited to, an interposer, and materials other than the crucible may also serve as the material of the interposer. For the germanium interposer, the structure completed by the lithography and etching process has excellent precision, so that the package of the photovoltaic element 105, the dimming component 110 and the upper cover 109 can be accurately performed. The upper cover 109 is used to cover the interposer 106 and the photovoltaic element 105 and to be bonded to the substrate 100.
舉一實施例而言,光電模組10更包括一定位結構形成於中介層106之上表面106a與上蓋109之內表面,以組合中介層106與上蓋109。舉例而言,定位結構包含一凹槽結構106e與一凸起結構109a,凹槽結構106e形成於中介層106之上表面106a,凸起結構109a形成於上蓋109之面向中介層106之上表面106a之內表面,利用凹槽結構106e搭配對應之凸起結構109a以結合上蓋109與中介層106。然而,在其他實施例中,定位結構之凹槽結構106e與凸起結構109a之設置位置可互相調換,亦可組合中介層106與上蓋109。In one embodiment, the optoelectronic module 10 further includes a positioning structure formed on the inner surface 106a of the interposer 106 and the inner surface of the upper cover 109 to combine the interposer 106 and the upper cover 109. For example, the positioning structure includes a groove structure 106e and a convex structure 109a formed on the upper surface 106a of the interposer 106. The convex structure 109a is formed on the upper surface 106a of the upper cover 109 facing the interposer 106. The inner surface is combined with the corresponding convex structure 109a by the groove structure 106e to bond the upper cover 109 and the interposer 106. However, in other embodiments, the position of the groove structure 106e and the protruding structure 109a of the positioning structure can be interchanged, and the interposer 106 and the upper cover 109 can also be combined.
在本實施例中,中介層106設置有凹槽結構106d的部分構成一矽基微光學平台,以作為各式光電元件(例如微透鏡陣列110)中所需的承載部分,而此光學平台之下的穿孔結構106c的空間可以讓光電元件105之發光通過其中。上述穿孔結構106c、凹槽結構106d及凹槽結構106e之位置可以視實際的應用情況而調整。舉例而言,中介層106之上表面106a之凹槽結構106e可以透過一蝕刻製程而形成,蝕刻後之凹槽角度(inclined angle)包含但不限定於45度、54.74度。凹槽結構106d亦可以透過一蝕刻製程而形成。穿孔結構106c可以藉由微機電系統(MEMS)來形成。舉例而言,穿孔結構106c之深度(光路徑)約為100~500微米,口徑(via aperture)約為50~400微米。尤其是,穿孔結構106c之口徑不宜超過光電元件105之陣列間距(例如為250微米)。微透鏡陣列110之微透鏡之數目端視實際的應用而設計。In the present embodiment, the portion of the interposer 106 provided with the recess structure 106d constitutes a germanium-based micro-optical platform to serve as a required load-bearing portion in various types of photovoltaic elements (for example, the microlens array 110), and the optical platform The space of the lower perforated structure 106c allows the light of the photovoltaic element 105 to pass therethrough. The positions of the above-mentioned perforated structure 106c, groove structure 106d and groove structure 106e can be adjusted depending on the actual application. For example, the recess structure 106e of the upper surface 106a of the interposer 106 can be formed by an etching process, and the inscribed angle of the etching includes, but is not limited to, 45 degrees and 54.74 degrees. The recess structure 106d can also be formed by an etching process. The perforated structure 106c can be formed by a microelectromechanical system (MEMS). For example, the perforated structure 106c has a depth (light path) of about 100 to 500 microns and a via aperture of about 50 to 400 microns. In particular, the diameter of the perforated structure 106c should not exceed the array pitch of the photovoltaic elements 105 (e.g., 250 microns). The number of microlenses of the microlens array 110 is designed depending on the actual application.
此外,控制晶片107或108例如為一驅動電路晶片或轉阻放大器(trans-impedance amplifier,TIA)晶片,其中驅動電路晶片可以用以驅動光電元件105使其發光。光電元件105可為光發射或接收元件,例如為雷射、垂直共振腔表面放射雷射(vertical cavity surface emitting laser,VCSEL)、光檢測器(photo-detector)或發光二極體。以光發射元件舉例而言,光電元件105主要之功能係根據控制晶片107或108所傳遞之電信號來產生或發射出對應轉換後的光束或光信號以進行傳輸。基板100例如為平面閘格陣列(land grid array,LGA)、球格陣列(BGA)的陶瓷基板封裝結構,其可以透過矽穿孔結構電性連接至一印刷電路板。另外,基板100除了可以作為控制晶片107與108或光電元件105的次封裝平台(sub-mount)之外,還可整合其他邏輯元件(logic device)、記憶體(memory)或整合被動元件(integrated passive devices,IPD)等元件於其上。換言之,垂直共振腔表面放射雷射/光檢測器可以整合於同一矽中介層106之上,因此,本發明實施例之光電模組10可以作為光收發器(transceiver)。舉例而言,垂直共振腔表面放射雷射以及光檢測器可互相隔離約500微米。In addition, the control wafer 107 or 108 is, for example, a driver circuit wafer or a trans-impedance amplifier (TIA) wafer, wherein the driver circuit wafer can be used to drive the photovoltaic element 105 to emit light. The optoelectronic component 105 can be a light emitting or receiving component such as a laser, a vertical cavity surface emitting laser (VCSEL), a photo-detector, or a light emitting diode. By way of example, a light emitting element, the primary function of the photovoltaic element 105 is to generate or emit a corresponding converted beam or optical signal for transmission based on the electrical signals transmitted by the control wafer 107 or 108. The substrate 100 is, for example, a ceramic grid package structure of a land grid array (LGA) or a ball grid array (BGA), which can be electrically connected to a printed circuit board through a through-hole structure. In addition, the substrate 100 can be integrated into other sub-mounts of the control wafers 107 and 108 or the photovoltaic elements 105, and can integrate other logic devices, memory or integrated passive components (integrated). Passive devices, IPD) and other components are on it. In other words, the vertical cavity surface radiation laser/photodetector can be integrated on the same germanium interposer 106. Therefore, the photovoltaic module 10 of the embodiment of the present invention can function as an optical transceiver. For example, the vertical cavity surface radiation laser and the photodetector can be isolated from each other by about 500 microns.
再者,上蓋109覆蓋並保護整體光電模組以免受外在環境汙染。舉例而言,上蓋109僅覆蓋基板100上的光電元件105、控制晶片107、108與中介層106,而裸露調光部件110以利於光電元件105所發出之光得以通過調光部件110而傳遞至光電模組之外部。如第一圖所示,上蓋109具有一通孔109b,面向調光部件110並位於調光部件110之上,約略對準調光部件110與光電元件105,使得光訊號得以通過通孔109b而傳遞出去。另外,上蓋109與中介層106亦可以透過注入黏著材料而互相接合。在本實施例中,上蓋109之材料包含但不限定於金屬上蓋,矽中介層與金屬上蓋之結合具有良好的散熱效果。此外,上蓋109之外表面可利用特定之製造方法形成其他定位結構,例如凸起結構(圖未示),以利於組合其他外部構件,例如一光纖連接器,藉此使光電模組10成為一可插拔模組化之光電模組10,具體而言,上蓋109之外表面的凸起結構可利用表面黏著製程,組合外部構件,因此無需高速電插座與外罩。Furthermore, the upper cover 109 covers and protects the entire photovoltaic module from external environmental pollution. For example, the upper cover 109 covers only the optoelectronic component 105 on the substrate 100, the control wafers 107, 108 and the interposer 106, and the dimming component 110 is exposed to facilitate the transmission of light emitted by the optoelectronic component 105 through the dimming component 110. The exterior of the optoelectronic module. As shown in the first figure, the upper cover 109 has a through hole 109b facing the dimming member 110 and located above the dimming member 110, approximately aligned with the dimming member 110 and the photocell 105, so that the optical signal can be transmitted through the through hole 109b. Go out. In addition, the upper cover 109 and the interposer 106 may be joined to each other by injecting an adhesive material. In this embodiment, the material of the upper cover 109 includes, but is not limited to, a metal upper cover, and the combination of the intermediate layer and the metal upper cover has a good heat dissipation effect. In addition, the outer surface of the upper cover 109 can be formed into other positioning structures by using a specific manufacturing method, such as a convex structure (not shown), to facilitate combining other external components, such as a fiber optic connector, thereby making the photovoltaic module 10 a The pluggable modular optoelectronic module 10, in particular, the raised structure on the outer surface of the upper cover 109 can utilize a surface bonding process to combine external components, thereby eliminating the need for a high speed electrical socket and housing.
請參考第二圖,其顯示根據本發明之一實施例之光電模組之立體示意圖。在本實施例中,光電模組10更包括一填充材料140設置於調光部件110與光電元件105之間並填入於穿孔結構106c中。舉例而言,填充材料140可為一膠體。此外,上蓋109可以包含數個開口109c以利於結構體的散熱。此外,在另一實施例中,亦可以在穿孔結構106c填入一物質,例如介電材料,以進一步調整光電元件105發射之雷射光束射出穿孔結構106c的出光角度。Please refer to the second figure, which shows a perspective view of a photovoltaic module according to an embodiment of the invention. In this embodiment, the photovoltaic module 10 further includes a filling material 140 disposed between the dimming member 110 and the photovoltaic element 105 and filled in the perforated structure 106c. For example, the filler material 140 can be a gel. In addition, the upper cover 109 may include a plurality of openings 109c to facilitate heat dissipation of the structure. In addition, in another embodiment, a substance, such as a dielectric material, may be filled in the perforated structure 106c to further adjust the exit angle of the laser beam emitted from the optoelectronic element 105 to exit the perforated structure 106c.
請參考第三圖,矽中介層106的厚度或孔徑大小的設計與光電元件105所發出之雷射光束的張角122有關。依 據選用的光電元件,可以適當的去設計或製作該中介層106。Referring to the third figure, the design of the thickness or aperture size of the interposer 106 is related to the opening angle 122 of the laser beam emitted by the optoelectronic component 105. according to The interposer 106 can be suitably designed or fabricated according to the optoelectronic component selected.
舉一實施例而言,經由光電元件105出光之雷射光束可以經由調光部件110以進一步進行光形的調整,然後加以耦合至外部光纖或另一導光結構。舉一實施例而言,調光部件110之結構誤差容忍度(tolerance)為±10微米,調光部件110之對準誤差容忍度為±20微米。調光部件110可為光學透鏡或準直透鏡(collimation lens)。光學透鏡例如為塑膠光學透鏡。In one embodiment, the laser beam exiting through the optoelectronic component 105 can be further optically modulated via the dimming component 110 and then coupled to an external fiber or another light directing structure. In one embodiment, the structural error tolerance of the dimming component 110 is ±10 microns, and the alignment error tolerance of the dimming component 110 is ±20 microns. The dimming member 110 can be an optical lens or a collimation lens. The optical lens is, for example, a plastic optical lens.
第四圖顯示為根據本發明之另一實施例之光電模組之示意圖。在本實施例中,光電模組10’與第一圖中的光電模組10相似,差別在於光電模組10’直接於中介層106之下表面106b形成容納光電元件105之凹槽結構106f,而取代光電模組10於基板100之上表面100b形成凹槽結構100a之例子。而穿孔結構106c係由凹槽結構106d之底面穿過中介層106至凹槽結構106f之頂部(上)表面。導電圖案104a形成於凹槽結構106f之部分上表面、下表面及側壁(斜面)上以電性連接光電元件105之焊接墊105a與導電凸塊102a。凹槽結構106f之製作可以彈性地選擇濕式蝕刻、乾式蝕刻或者是濕式及乾式蝕刻。利用高頻的導電圖案(trace)104a形成於凹槽結構106f之部分上表面、下表面及側面上以傳遞電訊號。在本實施例中,光電元件105與控制晶片107、108之間仍無需焊接線。The fourth figure shows a schematic view of a photovoltaic module in accordance with another embodiment of the present invention. In this embodiment, the optoelectronic module 10' is similar to the optoelectronic module 10 in the first figure, except that the optoelectronic module 10' forms a recess structure 106f for accommodating the optoelectronic component 105 directly on the lower surface 106b of the interposer 106. Instead of the photovoltaic module 10, an example of the recess structure 100a is formed on the upper surface 100b of the substrate 100. The perforated structure 106c is passed from the bottom surface of the recess structure 106d through the interposer 106 to the top (upper) surface of the recess structure 106f. The conductive pattern 104a is formed on a portion of the upper surface, the lower surface, and the sidewall (bevel) of the recess structure 106f to electrically connect the solder pad 105a of the photovoltaic element 105 and the conductive bump 102a. The fabrication of the recess structure 106f can be elastically selected for wet etching, dry etching, or wet and dry etching. A high-frequency conductive trace 104a is formed on portions of the upper surface, the lower surface, and the side surface of the recess structure 106f to transmit electrical signals. In this embodiment, there is still no need for a weld line between the photovoltaic element 105 and the control wafers 107,108.
綜合上述,由於本發明之實施例之光電元件透過中介層中之穿孔結構提供或接收光訊號,因此可以避免因穿孔結構之側壁粗糙所造成的漏電流問題。換言之,具有穿孔結構之中介層不會產生可靠度問題。In summary, since the photovoltaic element of the embodiment of the present invention provides or receives optical signals through the perforated structure in the interposer, leakage current problems caused by sidewall roughness of the perforated structure can be avoided. In other words, an interposer having a perforated structure does not pose a reliability problem.
此外,本發明之實施例之光電模組將中介層、調光部件及光電元件進行整合,並透過覆晶封裝結構與矽穿孔結構,使得控制單元與光電元件可整合至單一基板上In addition, the optoelectronic module of the embodiment of the present invention integrates the interposer, the dimming component and the optoelectronic component, and transmits the flip-chip package structure and the ply perforated structure, so that the control unit and the optoelectronic component can be integrated on a single substrate.
本發明實施例之光電模組由於矽穿孔結構對於控制晶片與光電元件無須打線製程便可完成模組的構裝,在高頻特性、高速傳輸、元件組裝速度上獲得提升。The photoelectric module of the embodiment of the invention can complete the module assembly by controlling the wafer and the photoelectric component without the need of a wire-bonding process, and is improved in high-frequency characteristics, high-speed transmission, and component assembly speed.
對熟悉此領域技藝者,本發明雖以實例闡明如上,然其並非用以限定本發明之精神。在不脫離本發明之精神與範圍內所作之修改與類似的配置,均應包含在下述之申請專利範圍內,此範圍應覆蓋所有類似修改與類似結構,且應做最寬廣的詮釋。The present invention has been described above by way of example, and is not intended to limit the scope of the invention. Modifications and similar configurations made within the spirit and scope of the invention are intended to be included within the scope of the appended claims.
10...光電模組10. . . Photoelectric module
100、120...基板100, 120. . . Substrate
100a、106d、106e、106f...凹槽結構100a, 106d, 106e, 106f. . . Groove structure
100b、106a...上表面100b, 106a. . . Upper surface
100c、106b...下表面100c, 106b. . . lower surface
101、106c...穿孔結構101, 106c. . . Perforated structure
101a...導電材料101a. . . Conductive material
102、102a...導電凸塊102, 102a. . . Conductive bump
103、104、104a...導電圖案103, 104, 104a. . . Conductive pattern
105...光電元件105. . . Optoelectronic component
105a...焊接墊105a. . . Solder pad
106...中介層106. . . Intermediary layer
107、108...控制晶片107, 108. . . Control chip
109...上蓋109. . . Upper cover
109a...凸起部109a. . . Raised portion
109b...通孔109b. . . Through hole
109c...開口109c. . . Opening
110...調光部件110. . . Dimming unit
122...角度122. . . angle
140...填充材料140. . . Filler
第一圖顯示根據本發明之一實施例之光電模組之示意圖。The first figure shows a schematic diagram of a photovoltaic module in accordance with an embodiment of the present invention.
第二圖顯示根據本發明之一實施例之光電模組之立體示意圖。The second figure shows a perspective view of a photovoltaic module in accordance with an embodiment of the present invention.
第三圖顯示根據本發明之光電元件之光束發散角度之示意圖。The third figure shows a schematic diagram of the beam divergence angle of the photovoltaic element according to the invention.
第四圖顯示根據本發明之另一實施例之光電模組之示意圖。The fourth figure shows a schematic view of a photovoltaic module in accordance with another embodiment of the present invention.
10...光電模組10. . . Photoelectric module
100...基板100. . . Substrate
100a、106d、106e...凹槽結構100a, 106d, 106e. . . Groove structure
100b、106a...上表面100b, 106a. . . Upper surface
100c、106b...下表面100c, 106b. . . lower surface
101、106c...穿孔結構101, 106c. . . Perforated structure
101a...第一導電材料101a. . . First conductive material
102、102a...導電凸塊102, 102a. . . Conductive bump
103、104...導電圖案103, 104. . . Conductive pattern
105...光電元件105. . . Optoelectronic component
105a...焊接墊105a. . . Solder pad
106...中介層106. . . Intermediary layer
107、108...控制晶片107, 108. . . Control chip
109...上蓋109. . . Upper cover
109a...凸起部109a. . . Raised portion
109b...通孔109b. . . Through hole
110...調光部件110. . . Dimming unit
Claims (12)
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