TWI451147B - Optoelectronic module - Google Patents

Description

Photoelectric module

The invention relates to a photoelectric module, in particular to a photoelectric module integrating a flip chip package structure and a 矽 perforated structure.

A connector is usually provided in the electronic device to electrically connect with another component to enable the electronic device to communicate with or transmit signals to other devices. However, with the advancement of technology, electronic devices are moving toward a trend of thinning and thinning. The connector plastic body made by the conventional mold and the conductive terminals made by applying the stamping technology are not easily installed in the thin and light electronic device.

The use of optocoupler elements as the basic design for photoelectric conversion and electrical signal transmission has been widely used in various current circuit configurations, electronic devices or related systems. Under the condition that the size of the relevant unit of the optocoupler element is small, it is quite difficult and inconvenient to assemble or implant the optical fiber into the light coupling device to conduct or introduce the optical signal to the light coupling device for transmission. Even errors can occur, which in turn can not accurately transmit optical signals to the fiber and affect transmission. Furthermore, the optical fiber system needs to be fixedly assembled or implanted in the light coupling device, so that in addition to the inability to provide repeated insertion and removal and assembly, the exposed fiber rear end will also form a linear extension and cause use. inconvenient.

In addition, an optical bonding technology of a silicon optical bench can be used as an application platform for board-to-board or USB 3.0 optical bonding technology. In terms of architecture, the optical connection transceiver module of the 矽-based micro-optical platform comprises: a 45-degree micro-reflective surface of a monolithic integrated body, a V-shaped groove for placing an optical fiber array, a high-frequency transmission line with 2.5 GHz, and a tin-gold solder. Etc., and a surface-emitting laser and photodetector can be packaged onto the micro-optical platform via appropriate optical alignment.

In addition, wafers and optical lasers have been developed to be integrated on the ruthenium-based micro-optical platform; however, the wafers and the optoelectronic components (face-emitting lasers and photodetectors, etc.) are usually passed through wire bonding. And for electrical connection. Since the nature of the soldering line is a medium that does not match the impedance of the wafer or the photovoltaic element, generally the power loss or signal distortion of the high-frequency electrical signal is reduced, and the length of the welding line is shortened as much as possible. However, in higher-speed signal transmission systems, there will still be a situation in which the impedance value is too large due to the increase in frequency due to the pole effect, or cross-talk noise between the channel and the channel will illuminate between the components. transfer speed.

Furthermore, the use of through silicon vias (TSVs) to transfer electrical signals in the interposer can avoid the impedance problem of the bonding wires, but the reliability issue of the structure remains to be verified. In addition, for optoelectronic modules with high-frequency transmission of 25 Gbps or higher, the active light-receiving area of the photoelectric elements (such as photodetectors) will be greatly reduced, so if the beam coupling efficiency of the photoelectric elements is poor, the light utilization cannot be satisfied. The need for an optical power budget.

Based on the above-mentioned shortcomings, it is known that the performance of the above-mentioned photoelectric connector needs to be further improved. Accordingly, the present invention provides an on-board photovoltaic module.

In view of the above disadvantages, it is an object of the present invention to provide a photovoltaic module comprising a perforated structure for facilitating transmission of electrical signals therethrough and for transmission of optical signals therethrough.

Another object of the present invention is to provide a photovoltaic module comprising a silicon interposer structure. Since no electrical signals need to be transmitted in the perforated structure of the interposer, leakage current problems caused by rough sidewalls of the crucible can be avoided. . In other words, the 矽 interposer structure does not create reliability problems.

A further object of the present invention is to provide a photovoltaic module. Since no wiring is required in the structure of the photovoltaic module, the problem of impedance generation can be reduced, and the high frequency performance can be improved.

Another object of the present invention is to provide a photovoltaic module for facilitating connection of a fiber connector, that is, a pluggable modular photovoltaic module.

The photoelectric module provided by the invention utilizes a surface mountable process, so that no high-speed electrical socket and a cage are needed.

An embodiment of the present invention provides an optoelectronic module including an interposer having a first upper surface, a first lower surface, and a first perforation structure, wherein the first upper surface is opposite to the first lower surface, first The perforated structure is disposed from the first upper surface through the interposer to the first lower surface; a photovoltaic element is disposed on the upper side of the first lower surface of the interposer, wherein the optoelectronic component is adapted to provide or receive an optical signal via the first perforated structure; And a dimming component disposed on the upper side of the first upper surface of the interposer and located on the transmission path of the optical signal for adjusting the light shape of the optical signal.

The photovoltaic module of an embodiment of the present invention further includes a first recess structure formed on the first upper surface of the interposer, wherein the dimming member is disposed in the first recess structure, and the first perforated structure is formed by the first recess The bottom surface of the groove structure passes through the interposer to the first lower surface; a substrate having a second upper surface, a second lower surface, a second perforated structure and a conductive material, wherein the photovoltaic element is located between the interposer and the substrate a second upper surface facing the first lower surface of the interposer, the second perforated structure passing through the substrate from the second upper surface to the second lower surface, and the conductive material is filled into the second perforated structure; further comprising a second recess The structure is formed on the substrate or the interposer, wherein the photoelectric element is disposed in the second groove structure, and at least one control unit is disposed on the second upper surface of the substrate, and electrically connected to the conductive material and the photoelectric element to control the photoelectric The component further includes a first conductive pattern formed on the second upper surface of the substrate, and a second conductive pattern formed on the first lower surface of the interposer; further comprising an upper cover and a positioning structure, A cover covering the interposer with the photovoltaic element, positioning structure formed in the first cover surface and the upper surface of the interposer; further comprising a filler material disposed between the light modulation element and the photoelectric member and filled in the first perforated structure.

In summary, the embodiment of the present invention proposes a new photovoltaic module structure, which integrates the interposer with the dimming component and the perforated structure, so that the control unit and the optoelectronic component are integrated on a single substrate.

In another embodiment, due to the perforated structure and the conductive material therein, the module can be assembled without the need for a wire-bonding process for the control unit and the photovoltaic element, and the high-frequency characteristics, high-speed transmission, and component assembly speed are improved.

The invention will be described in conjunction with the embodiments and the accompanying drawings. It is to be understood that all of the embodiments of the invention are illustrative and not intended to be limiting. Therefore, the invention may be applied to other embodiments in addition to the embodiments described herein. The invention is not limited to any embodiment, but should be determined by the scope of the appended claims and their equivalents.

The first figure shows a schematic diagram of a photovoltaic module with a flip chip package structure in accordance with an embodiment of the present invention. In this embodiment, the optoelectronic module 10 can be used as a miniaturized passive optical connection transmitting end or receiving end, or the integrated transmitting and receiving end can be an optical transceiver module. The optoelectronic module 10 includes the substrate 100 and the conductive convex portion. Solder bumps 102 and 102a, conductive patterns 103 and 104, photovoltaic elements 105, interposer 106, control wafers 107 and 108, a cover 109 and a light modulating member 110. For example, the substrate 100 includes, but is not limited to, a ceramic laminate, a germanium substrate, or a printed circuit board; the interposer 106 includes, but is not limited to, a semiconductor layer.

The interposer 106 has an upper surface 106a, a lower surface 106b, a perforated structure 106c and a recess structure 106d. The upper surface 106a is opposite to the lower surface 106b. The recess structure 106d is disposed on the upper surface 106a to facilitate the configuration of the dimming component 110. Therein, the perforated structure 106c passes through the interposer 106 to the lower surface 106b from the bottom surface of the recess structure 106d. The upper surface 106a and the lower surface 106b refer to the upper surface and the lower surface of the overall structure of the interposer. The optoelectronic component 105 is disposed on the underside of the lower surface 106b of the interposer 106, and the optoelectronic component 105 is adapted to provide or receive an optical signal via the via structure 106c. The dimming member 110 is disposed on the upper side of the upper surface 106a of the interposer 106 and is located on the transmission path of the optical signal. In particular, the optoelectronic component 105 can be configured to be aligned with the perforated structure 106c and the dimming component 110 to facilitate the transmission of light emitted by the optoelectronic component 105 to the exterior of the optoelectronic module 10 through the dimming component 110. In the present embodiment, the dimming member 110 is, for example, a micro lens array.

The substrate 100 has a groove structure 100a, an upper surface 100b, a lower surface 100c, a perforated structure 101 and a conductive material 101a, wherein the upper surface 100b is opposite to the lower surface 100c and the upper surface 100b of the substrate 100 faces the interposer 106. The surface 106b, the recess structure 100a is disposed on the upper surface 100b of the substrate 100 to facilitate the arrangement of the photovoltaic element 105 therein, that is, the photovoltaic element 105 is located between the interposer 106 and the substrate 100. The perforated structure 101 passes through the upper surface 100b through the substrate 100 to the lower surface 100c, and the perforated structure 101 is filled, for example, with a conductive material 101a to form a crucible perforation. The control wafers 107 and 108 are disposed on the upper surface 100b of the substrate 100, and are electrically connected to the perforated conductive material 101a and the photovoltaic element 105. Specifically, the conductive pattern 103 is formed on the upper surface 100b of the substrate 100, and the conductive pattern 104 is formed on the lower surface 106b of the interposer 106. The conductive bumps 102 are formed between the control wafers 107, 108 and the substrate 100, that is, the conductive bumps 102 are formed on the upper surface 100b of the substrate 100 and the lower surfaces of the control wafers 107 and 108; the conductive bumps 102a are formed in the intermediate Between the layer 106 and the substrate 100, that is, the conductive bumps 102a are formed on the upper surface 100b of the substrate 100 and the lower surface 106b of the interposer 106. In the present embodiment, the conductive bumps 102 on the lower surfaces of the control wafers 107 and 108 can be directly electrically connected to the control wafers 107 and 108, respectively. The conductive bumps 102a located on the lower surface 106b of the interposer 106 are electrically connected to the control wafer 108 through the conductive patterns 103 and the conductive bumps 102, and electrically connected to the solder pads 105a of the photovoltaic elements 105 through the conductive patterns 104. In other words, the control wafers 107 and 108 are electrically connected to the photovoltaic element 105 through the conductive bumps 102, the conductive patterns 103, the conductive bumps 102a and the conductive patterns 104, and the control wafers 107 and 108 are electrically connected through the conductive bumps 102. The conductive material 101a in the perforation of the substrate 100 under it. Therefore, in the present embodiment, a bonding wire is not required between the photovoltaic element 105 and the control wafers 107, 108. In addition, the setting of the distance between the conductive bumps 102 and 102a depends on the accuracy requirements of the substrate 100.

The formation or arrangement of the conductive patterns 103 described above extends from under the interposer 106 to the underside of the control wafers 107 and 108, so that the electrical signals of the photovoltaic elements 105 can be transmitted and received outside the two sides of the interposer 106, as shown in the following table. The surface pins (e.g., conductive bumps 102a) are diffused out of the area covered by the interposer 106 to provide better connections to other devices and to reduce electromagnetic interference between the pins. The control wafers 107 and 108 are disposed on the outer side of the interposer 106, and the control wafers 107 and 108 are directly disposed on the substrate 100, thereby reducing the size of the interposer 106.

The interposer 106 includes, but is not limited to, an interposer, and materials other than the crucible may also serve as the material of the interposer. For the germanium interposer, the structure completed by the lithography and etching process has excellent precision, so that the package of the photovoltaic element 105, the dimming component 110 and the upper cover 109 can be accurately performed. The upper cover 109 is used to cover the interposer 106 and the photovoltaic element 105 and to be bonded to the substrate 100.

In one embodiment, the optoelectronic module 10 further includes a positioning structure formed on the inner surface 106a of the interposer 106 and the inner surface of the upper cover 109 to combine the interposer 106 and the upper cover 109. For example, the positioning structure includes a groove structure 106e and a convex structure 109a formed on the upper surface 106a of the interposer 106. The convex structure 109a is formed on the upper surface 106a of the upper cover 109 facing the interposer 106. The inner surface is combined with the corresponding convex structure 109a by the groove structure 106e to bond the upper cover 109 and the interposer 106. However, in other embodiments, the position of the groove structure 106e and the protruding structure 109a of the positioning structure can be interchanged, and the interposer 106 and the upper cover 109 can also be combined.

In the present embodiment, the portion of the interposer 106 provided with the recess structure 106d constitutes a germanium-based micro-optical platform to serve as a required load-bearing portion in various types of photovoltaic elements (for example, the microlens array 110), and the optical platform The space of the lower perforated structure 106c allows the light of the photovoltaic element 105 to pass therethrough. The positions of the above-mentioned perforated structure 106c, groove structure 106d and groove structure 106e can be adjusted depending on the actual application. For example, the recess structure 106e of the upper surface 106a of the interposer 106 can be formed by an etching process, and the inscribed angle of the etching includes, but is not limited to, 45 degrees and 54.74 degrees. The recess structure 106d can also be formed by an etching process. The perforated structure 106c can be formed by a microelectromechanical system (MEMS). For example, the perforated structure 106c has a depth (light path) of about 100 to 500 microns and a via aperture of about 50 to 400 microns. In particular, the diameter of the perforated structure 106c should not exceed the array pitch of the photovoltaic elements 105 (e.g., 250 microns). The number of microlenses of the microlens array 110 is designed depending on the actual application.

In addition, the control wafer 107 or 108 is, for example, a driver circuit wafer or a trans-impedance amplifier (TIA) wafer, wherein the driver circuit wafer can be used to drive the photovoltaic element 105 to emit light. The optoelectronic component 105 can be a light emitting or receiving component such as a laser, a vertical cavity surface emitting laser (VCSEL), a photo-detector, or a light emitting diode. By way of example, a light emitting element, the primary function of the photovoltaic element 105 is to generate or emit a corresponding converted beam or optical signal for transmission based on the electrical signals transmitted by the control wafer 107 or 108. The substrate 100 is, for example, a ceramic grid package structure of a land grid array (LGA) or a ball grid array (BGA), which can be electrically connected to a printed circuit board through a through-hole structure. In addition, the substrate 100 can be integrated into other sub-mounts of the control wafers 107 and 108 or the photovoltaic elements 105, and can integrate other logic devices, memory or integrated passive components (integrated). Passive devices, IPD) and other components are on it. In other words, the vertical cavity surface radiation laser/photodetector can be integrated on the same germanium interposer 106. Therefore, the photovoltaic module 10 of the embodiment of the present invention can function as an optical transceiver. For example, the vertical cavity surface radiation laser and the photodetector can be isolated from each other by about 500 microns.

Furthermore, the upper cover 109 covers and protects the entire photovoltaic module from external environmental pollution. For example, the upper cover 109 covers only the optoelectronic component 105 on the substrate 100, the control wafers 107, 108 and the interposer 106, and the dimming component 110 is exposed to facilitate the transmission of light emitted by the optoelectronic component 105 through the dimming component 110. The exterior of the optoelectronic module. As shown in the first figure, the upper cover 109 has a through hole 109b facing the dimming member 110 and located above the dimming member 110, approximately aligned with the dimming member 110 and the photocell 105, so that the optical signal can be transmitted through the through hole 109b. Go out. In addition, the upper cover 109 and the interposer 106 may be joined to each other by injecting an adhesive material. In this embodiment, the material of the upper cover 109 includes, but is not limited to, a metal upper cover, and the combination of the intermediate layer and the metal upper cover has a good heat dissipation effect. In addition, the outer surface of the upper cover 109 can be formed into other positioning structures by using a specific manufacturing method, such as a convex structure (not shown), to facilitate combining other external components, such as a fiber optic connector, thereby making the photovoltaic module 10 a The pluggable modular optoelectronic module 10, in particular, the raised structure on the outer surface of the upper cover 109 can utilize a surface bonding process to combine external components, thereby eliminating the need for a high speed electrical socket and housing.

Please refer to the second figure, which shows a perspective view of a photovoltaic module according to an embodiment of the invention. In this embodiment, the photovoltaic module 10 further includes a filling material 140 disposed between the dimming member 110 and the photovoltaic element 105 and filled in the perforated structure 106c. For example, the filler material 140 can be a gel. In addition, the upper cover 109 may include a plurality of openings 109c to facilitate heat dissipation of the structure. In addition, in another embodiment, a substance, such as a dielectric material, may be filled in the perforated structure 106c to further adjust the exit angle of the laser beam emitted from the optoelectronic element 105 to exit the perforated structure 106c.

Referring to the third figure, the design of the thickness or aperture size of the interposer 106 is related to the opening angle 122 of the laser beam emitted by the optoelectronic component 105. according to The interposer 106 can be suitably designed or fabricated according to the optoelectronic component selected.

In one embodiment, the laser beam exiting through the optoelectronic component 105 can be further optically modulated via the dimming component 110 and then coupled to an external fiber or another light directing structure. In one embodiment, the structural error tolerance of the dimming component 110 is ±10 microns, and the alignment error tolerance of the dimming component 110 is ±20 microns. The dimming member 110 can be an optical lens or a collimation lens. The optical lens is, for example, a plastic optical lens.

The fourth figure shows a schematic view of a photovoltaic module in accordance with another embodiment of the present invention. In this embodiment, the optoelectronic module 10' is similar to the optoelectronic module 10 in the first figure, except that the optoelectronic module 10' forms a recess structure 106f for accommodating the optoelectronic component 105 directly on the lower surface 106b of the interposer 106. Instead of the photovoltaic module 10, an example of the recess structure 100a is formed on the upper surface 100b of the substrate 100. The perforated structure 106c is passed from the bottom surface of the recess structure 106d through the interposer 106 to the top (upper) surface of the recess structure 106f. The conductive pattern 104a is formed on a portion of the upper surface, the lower surface, and the sidewall (bevel) of the recess structure 106f to electrically connect the solder pad 105a of the photovoltaic element 105 and the conductive bump 102a. The fabrication of the recess structure 106f can be elastically selected for wet etching, dry etching, or wet and dry etching. A high-frequency conductive trace 104a is formed on portions of the upper surface, the lower surface, and the side surface of the recess structure 106f to transmit electrical signals. In this embodiment, there is still no need for a weld line between the photovoltaic element 105 and the control wafers 107,108.

In summary, since the photovoltaic element of the embodiment of the present invention provides or receives optical signals through the perforated structure in the interposer, leakage current problems caused by sidewall roughness of the perforated structure can be avoided. In other words, an interposer having a perforated structure does not pose a reliability problem.

In addition, the optoelectronic module of the embodiment of the present invention integrates the interposer, the dimming component and the optoelectronic component, and transmits the flip-chip package structure and the ply perforated structure, so that the control unit and the optoelectronic component can be integrated on a single substrate.

The photoelectric module of the embodiment of the invention can complete the module assembly by controlling the wafer and the photoelectric component without the need of a wire-bonding process, and is improved in high-frequency characteristics, high-speed transmission, and component assembly speed.

The present invention has been described above by way of example, and is not intended to limit the scope of the invention. Modifications and similar configurations made within the spirit and scope of the invention are intended to be included within the scope of the appended claims.

10. . . Photoelectric module

100, 120. . . Substrate

100a, 106d, 106e, 106f. . . Groove structure

100b, 106a. . . Upper surface

100c, 106b. . . lower surface

101, 106c. . . Perforated structure

101a. . . Conductive material

102, 102a. . . Conductive bump

103, 104, 104a. . . Conductive pattern

105. . . Optoelectronic component

105a. . . Solder pad

106. . . Intermediary layer

107, 108. . . Control chip

109. . . Upper cover

109a. . . Raised portion

109b. . . Through hole

109c. . . Opening

110. . . Dimming unit

122. . . angle

140. . . Filler

The first figure shows a schematic diagram of a photovoltaic module in accordance with an embodiment of the present invention.

The second figure shows a perspective view of a photovoltaic module in accordance with an embodiment of the present invention.

The third figure shows a schematic diagram of the beam divergence angle of the photovoltaic element according to the invention.

The fourth figure shows a schematic view of a photovoltaic module in accordance with another embodiment of the present invention.

10. . . Photoelectric module

100. . . Substrate

100a, 106d, 106e. . . Groove structure

100b, 106a. . . Upper surface

100c, 106b. . . lower surface

101, 106c. . . Perforated structure

101a. . . First conductive material

102, 102a. . . Conductive bump

103, 104. . . Conductive pattern

105. . . Optoelectronic component

105a. . . Solder pad

106. . . Intermediary layer

107, 108. . . Control chip

109. . . Upper cover

109a. . . Raised portion

109b. . . Through hole

110. . . Dimming unit

Claims (12)

An optoelectronic module includes: an interposer having a first upper surface, a first lower surface, and a first perforated structure, wherein the first upper surface is opposite to the first lower surface, and the first perforated structure is The first upper surface passes through the interposer to the first lower surface; a photovoltaic element is disposed on a lower side of the first lower surface of the interposer, wherein the optoelectronic component is adapted to be provided via the first perforated structure or Receiving an optical signal; a dimming component disposed on an upper side of the first upper surface of the interposer and located on a transmission path of the optical signal, wherein the dimming component is configured to adjust a light shape of the optical signal; a substrate having a second upper surface, a second lower surface, a second perforated structure, and a conductive material, wherein the optoelectronic component is located between the interposer and the substrate, the second upper surface facing the intermediary The first lower surface of the layer, the second perforated structure passes through the substrate from the second upper surface to the second lower surface, and the conductive material is filled into the second perforated structure. The photoelectric module of claim 1, further comprising a first groove structure formed on the first upper surface of the interposer, wherein the dimming member is disposed in the first groove In the structure, the first perforated structure passes through the interposer to the first lower surface from the bottom surface of the first groove structure. The photovoltaic module of claim 1, further comprising a second recess structure formed on the second upper surface of the substrate or the first lower surface of the interposer, wherein the optoelectronic The component is disposed in the second groove structure. The photoelectric module of claim 1, further comprising at least one control unit, the control unit being disposed on the second upper surface of the substrate, wherein the control unit is electrically connected to the conductive material and the photoelectric element to control The photovoltaic element. The optoelectronic module of claim 1, wherein the dimming component is a microlens array. The photovoltaic module of claim 1, wherein the interposer is a semiconductor layer. The optoelectronic module of claim 6, further comprising an upper cover and a positioning structure, wherein the upper cover covers the interposer and the optoelectronic component, the positioning structure is formed on the inner surface of the upper cover and the first of the interposer Upper surface. An optoelectronic module includes: an interposer having a first upper surface, a first lower surface, and a first perforation structure, wherein the first upper surface is opposite to the first lower surface, a first perforated structure passing through the interposer to the first lower surface; a photovoltaic element disposed on a lower side of the first lower surface of the interposer, wherein the optoelectronic component is adapted to pass the first a light-punching member is disposed on the upper surface of the first upper surface of the interposer and disposed on the transmission path of the optical signal, wherein the dimming component is configured to adjust the optical signal And a substrate and a recess structure, the substrate has a second upper surface and a second lower surface, wherein the recess structure is formed on the second upper surface of the substrate or the interposer On the lower surface, the photovoltaic element is located between the interposer and the substrate, and is disposed in the recess structure. The optoelectronic module of claim 8, further comprising an upper cover, the upper cover having a through hole facing the dimming member, wherein the upper cover covers the interposer and the photo-electric element and is bonded to the substrate. The photovoltaic module of claim 9, wherein the material of the upper cover comprises metal. The photoelectric module of claim 8, further comprising at least one control unit, a first conductive pattern and a second conductive pattern, wherein the first conductive pattern and the second conductive pattern are respectively formed on the substrate On the upper surface of the second upper surface of the interposer, the control unit is placed on the first lower surface The photovoltaic element is electrically connected to the second upper surface of the substrate and through the first conductive pattern and the second conductive pattern. The photovoltaic module of claim 1, further comprising a filling material disposed between the dimming member and the photovoltaic element and filled in the first perforated structure.