TWI438511B - Optoelectronic module - Google Patents

Optoelectronic module Download PDF

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TWI438511B
TWI438511B TW100139464A TW100139464A TWI438511B TW I438511 B TWI438511 B TW I438511B TW 100139464 A TW100139464 A TW 100139464A TW 100139464 A TW100139464 A TW 100139464A TW I438511 B TWI438511 B TW I438511B
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Taiwan
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substrate
conductive material
module
conductive
disposed
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TW100139464A
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Chinese (zh)
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TW201317652A (en
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Chia Chi Chang
Guan Fu Lu
Chun Chiang Yen
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Ct A Photonics Corp
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Priority to TW100139464A priority Critical patent/TWI438511B/en
Priority to US13/426,623 priority patent/US9057850B2/en
Priority to CN201210079603.6A priority patent/CN102692685B/en
Publication of TW201317652A publication Critical patent/TW201317652A/en
Priority to US14/082,084 priority patent/US8940563B2/en
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Publication of TWI438511B publication Critical patent/TWI438511B/en
Priority to US14/697,640 priority patent/US9488791B2/en

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光電模組Photoelectric module

本發明係關於光電模組,特別係一種整合導光結構與矽穿孔結構之光電模組。The invention relates to a photoelectric module, in particular to a photoelectric module integrating a light guiding structure and a 矽 perforated structure.

電子裝置中通常會配設一連接器藉此與一其他元件電性連接,以使電子裝置與他裝置溝通或傳輸訊號。然而,隨著科技的進步,電子裝置朝向輕薄化之趨勢發展,以傳統模具所製作之連接器塑膠本體以及應用沖壓技術所製作之導電端子即不易裝設於輕薄化之電子裝置中。A connector is usually provided in the electronic device to electrically connect with another component to enable the electronic device to communicate with or transmit signals to other devices. However, with the advancement of technology, electronic devices are moving toward a trend of thinning and thinning. The connector plastic body made by the conventional mold and the conductive terminals made by applying the stamping technology are not easily installed in the thin and light electronic device.

以光電耦合元件作為光電轉換與電信號傳輸上的基本設計,在目前的各種電路構造、電子裝置或相關系統中係已得到了廣泛的應用。在光電耦合元件的相關單元的尺寸設計均較小的條件之下,將光纖組裝或植入至耦光裝置內以將光信號導出或導入耦光裝置以進行傳輸,便具有相當的難度與不便,甚至會產生誤差,進而使光信號無法準確傳遞至光纖中而影響傳輸。再者,光纖係需在耦光裝置內作固定式之組裝或植入,使得除了無法提供反覆的插拔與組裝外,所外露的光纖後端亦會形成線狀之延伸而造成使用上的不便。The use of optocoupler elements as the basic design for photoelectric conversion and electrical signal transmission has been widely used in various current circuit configurations, electronic devices or related systems. Under the condition that the size of the relevant unit of the optocoupler element is small, it is quite difficult and inconvenient to assemble or implant the optical fiber into the light coupling device to conduct or introduce the optical signal to the light coupling device for transmission. Even errors can occur, which in turn can not accurately transmit optical signals to the fiber and affect transmission. Furthermore, the optical fiber system needs to be fixedly assembled or implanted in the light coupling device, so that in addition to the inability to provide repeated insertion and removal and assembly, the exposed fiber rear end will also form a linear extension and cause use. inconvenient.

另外,一種矽基微光學平台之光學連結技術係可以作為板對板或USB 3.0之光學連結技術的一個應用平台。在架構上,此矽基微光學平台之光學連結收發模組包含有:單石積體化之45°微反射面、置放光纖陣列之V型凹槽、具2.5 GHz之高頻傳輸線與錫金焊料等,並可經由適當之光學對位而將面射型雷射與光偵測器封裝至該微光學平台上。In addition, an optical bonding technology of a germanium-based micro-optical platform can be used as an application platform for board-to-board or USB 3.0 optical bonding technology. Architecturally, the optical connection transceiver module of the bismuth-based micro-optical platform comprises: a 45-degree micro-reflective surface of a monolithic body, a V-shaped groove for placing an optical fiber array, a high-frequency transmission line with 2.5 GHz, and a tin-gold solder. Etc., and a surface-emitting laser and photodetector can be packaged onto the micro-optical platform via appropriate optical alignment.

此外,目前已發展將晶片與光雷射整合於矽基微光學平台之上;惟其晶片與光雷射元件之間通常係透過焊線(wire)而作電性連接,因而影響了元件之間的傳輸速度。In addition, it has been developed to integrate the wafer and the light laser onto the germanium-based micro-optical platform; however, the wafer and the light-emitting element are usually electrically connected through a wire, thereby affecting the components. Transmission speed.

因此,基於上面所述之缺點得知上述光電連接器之效能尚有待進一步提升之處。Therefore, based on the above-mentioned drawbacks, it is known that the performance of the above-mentioned photoelectric connector has yet to be further improved.

本發明之一實施例提供一種光電模組,包含一基板、一光電元件及一控制單元。基板具有一上表面、一下表面、一凹槽結構、一穿孔結構及一導電材料,其中上表面與下表面相對,凹槽結構設置於上表面且具有兩相對之第一反射面及第二反射面,穿孔結構由上表面穿過基板至下表面,穿孔結構中填滿導電材料;光電元件設置於基板上,適於提供或接收一光訊號,第一反射面與第二反射面皆位於光訊號之光路徑上;控制單元設置於上表面上,且電性連接導電材料及光電元件,以控制光電元件。One embodiment of the present invention provides a photovoltaic module including a substrate, a photovoltaic element, and a control unit. The substrate has an upper surface, a lower surface, a groove structure, a perforated structure and a conductive material, wherein the upper surface is opposite to the lower surface, the groove structure is disposed on the upper surface and has two opposite first reflective surfaces and a second reflection The perforated structure is formed by the upper surface passing through the substrate to the lower surface, and the perforated structure is filled with the conductive material; the photoelectric element is disposed on the substrate and is adapted to provide or receive an optical signal, and the first reflective surface and the second reflective surface are both located in the light. The light path of the signal; the control unit is disposed on the upper surface, and electrically connected to the conductive material and the photoelectric element to control the photoelectric element.

本發明之一實施例之光電模組包括一基板、一光電元件、一導光結構及一控制單元。基板具有一上表面、一下表面、一第一凹槽結構、一第一穿孔結構及一第一導電材料,其中上表面與下表面相對,第一凹槽結構設置於上表面,第一穿孔結構由第一凹槽結構之底面穿過基板至下表面,第一穿孔結構中填滿第一導電材料;光電元件設置於基板上,其中光電元件適於提供或接收一光訊號;導光結構設置於基板上,且導光結構係位於光訊號之光路徑上;控制單元設置於第一凹槽結構中,且電性連接第一導電材料及光電元件,以控制光電元件。The photovoltaic module of an embodiment of the invention comprises a substrate, a photoelectric element, a light guiding structure and a control unit. The substrate has an upper surface, a lower surface, a first recess structure, a first perforated structure and a first conductive material, wherein the upper surface is opposite to the lower surface, the first recess structure is disposed on the upper surface, and the first perforated structure The first perforated structure is filled with the first conductive material from the bottom surface of the first groove structure; the photoelectric element is disposed on the substrate, wherein the photoelectric element is adapted to provide or receive an optical signal; the light guiding structure is disposed On the substrate, the light guiding structure is located on the optical path of the optical signal; the control unit is disposed in the first groove structure, and electrically connects the first conductive material and the photoelectric element to control the photoelectric element.

本發明之一實施例之光電模組包括一第一基板、一光電元件、一導光結構、一上層結構、一第一穿孔結構、一第一導電材料及一控制單元。第一基板具有一上表面、一下表面、一凹槽結構,其中上表面與下表面相對,凹槽結構設置於上表面;光電元件設置於凹槽結構中,其中光電元件適於提供或接收一光訊號;導光結構設置於第一基板之上表面上,且導光結構位於光訊號之光路徑上;上層結構設置於第一基板之上方,用以搭配第一基板固定導光結構,其中上層結構具有一位於光訊號之光路徑上的反射面,用以於光電元件與導光結構之間傳遞光訊號;第一導電材料填入第一穿孔結構中;控制單元電性連接第一導電材料及光電元件,以控制光電元件。The photoelectric module of an embodiment of the invention comprises a first substrate, a photoelectric element, a light guiding structure, an upper layer structure, a first perforated structure, a first conductive material and a control unit. The first substrate has an upper surface, a lower surface, and a groove structure, wherein the upper surface is opposite to the lower surface, and the groove structure is disposed on the upper surface; the photoelectric element is disposed in the groove structure, wherein the photoelectric element is adapted to provide or receive a The light guiding structure is disposed on the upper surface of the first substrate, and the light guiding structure is located on the optical path of the optical signal; the upper structure is disposed above the first substrate for fixing the light guiding structure with the first substrate, wherein The upper structure has a reflective surface on the optical path of the optical signal for transmitting the optical signal between the photoelectric element and the light guiding structure; the first conductive material is filled in the first perforated structure; and the control unit is electrically connected to the first conductive Materials and optoelectronic components to control optoelectronic components.

綜合上述,本發明之實施例提出一種新的光電模組結構,將基板與導光結構及穿孔結構進行整合,使得控制單元與光電元件整合至單一基板上。In summary, the embodiment of the present invention provides a new photovoltaic module structure, which integrates the substrate with the light guiding structure and the perforated structure, so that the control unit and the photoelectric element are integrated on a single substrate.

在另一實施例中,基板整合穿孔結構、導光結構與反射面,可以將電訊號經由穿孔結構中之導電材料而傳送至控制單元,進而驅動光電元件發光。光訊號進入導光結構之後,經過兩次45度面的反射之後,可以將光束轉折至正向(上)出光,且導光結構可以做高效率的光束導引。In another embodiment, the substrate integrates the perforated structure, the light guiding structure and the reflective surface, and the electrical signal can be transmitted to the control unit via the conductive material in the perforated structure, thereby driving the photoelectric element to emit light. After the optical signal enters the light guiding structure, after two 45-degree reflections, the light beam can be turned to the forward (upper) light, and the light guiding structure can perform high-efficiency beam guiding.

在另一實施例中,由於穿孔結構及其中之導電材料,因此對於控制單元與光電元件無須打線(Wire)製程便可完成模組的構裝,在高頻特性、高速傳輸、元件組裝速度上獲得提升。In another embodiment, due to the perforated structure and the conductive material therein, the module can be assembled without a wire (Wire) process for the control unit and the optoelectronic component, in high frequency characteristics, high speed transmission, and component assembly speed. Get promoted.

本發明將配合實施例與隨附之圖式詳述於下。應可理解者為本發明中所有之實施例僅為例示之用,並非用以限制。因此除文中之實施例外,本發明亦可廣泛地應用在其他實施例中。且本發明並不受限於任何實施例,應以隨附之申請專利範圍及其同等領域而定。The invention will be described in conjunction with the embodiments and the accompanying drawings. It is to be understood that all of the embodiments of the invention are illustrative and not intended to be limiting. Therefore, the invention may be applied to other embodiments in addition to the embodiments described herein. The invention is not limited to any embodiment, but should be determined by the scope of the appended claims and their equivalents.

第一圖顯示為根據本發明之一實施例之光電模組之示意圖。在本實施例中,光電模組10可以作為微型化被動式光連結發射端或接收端,其包含例如為半導體材料的基板100、擴散式導電圖案(fan-out condcutive pattern)102、上導電凸塊(solder bumps)103a/103b、下導電凸塊104、控制晶片105、光電元件106與導光結構107。基板100具有一上表面、一下表面、一凹槽結構108、一第一穿孔結構及一第一導電材料,其中上表面與下表面相對,凹槽結構108設置於上表面且具有兩相對之第一反射面108a及第二反射面108b,第一穿孔結構由上表面穿過基板100至下表面,第一穿孔結構中例如填滿第一導電材料以形成矽穿孔101(TSV: through silicon via),矽穿孔101並且電性連接擴散式導電圖案102,其中擴散式導電圖案102係形成於基板100之上表面。上導電凸塊103a/103b分別可直接電性連接控制晶片105、光電元件106及擴散式導電圖案102或透過擴散式導電圖案102電性連接控制晶片105及光電元件106。換言之,控制晶片105係透過擴散式導電圖案102而電性連接光電元件106,且控制晶片105係透過上導電凸塊103a並經由擴散式導電圖案102、矽穿孔101而電性連接其下的層板(laminate)111。在此實施例中,上導電凸塊103a電性連接擴散式導電圖案102。The first figure shows a schematic view of a photovoltaic module in accordance with an embodiment of the present invention. In this embodiment, the optoelectronic module 10 can be used as a miniaturized passive optical connection transmitting end or receiving end, which comprises a substrate 100 such as a semiconductor material, a fan-out condcutive pattern 102, and an upper conductive bump. (Solder bumps) 103a / 103b, lower conductive bumps 104, control wafer 105, photovoltaic elements 106 and light guiding structure 107. The substrate 100 has an upper surface, a lower surface, a groove structure 108, a first perforated structure and a first conductive material, wherein the upper surface is opposite to the lower surface, and the groove structure 108 is disposed on the upper surface and has two opposite sides. a reflective surface 108a and a second reflective surface 108b, the first perforated structure passes through the substrate 100 to the lower surface from the upper surface, and the first perforated structure is filled, for example, with the first conductive material to form a through silicon via (101V) The through hole 101 is electrically connected to the diffusion conductive pattern 102, and the diffusion conductive pattern 102 is formed on the upper surface of the substrate 100. The upper conductive bumps 103a/103b can be directly electrically connected to the control wafer 105, the photovoltaic element 106, and the diffusion conductive pattern 102 or electrically connected to the control wafer 105 and the photovoltaic element 106 through the diffusion conductive pattern 102. In other words, the control wafer 105 is electrically connected to the photovoltaic element 106 through the diffusion conductive pattern 102, and the control wafer 105 is electrically connected to the lower layer through the upper conductive bump 103a and via the diffusion conductive pattern 102 and the via hole 101. Laminate 111. In this embodiment, the upper conductive bumps 103a are electrically connected to the diffusion conductive pattern 102.

上述之擴散式導電圖案102可以使得控制晶片105之下表面接腳(例如導電凸塊)被擴散式散出至控制晶片105所覆蓋面積之外,以提供其他裝置與之有較好之連接,並可以減低接腳間之電磁干擾。The diffusion conductive pattern 102 described above may allow the lower surface pins (eg, conductive bumps) of the control wafer 105 to be diffused out of the area covered by the control wafer 105 to provide better connections to other devices. It can also reduce the electromagnetic interference between the pins.

基板100例如為一矽中介層100(Silicon Interposer)。導光結構107為一波導結構(waveguide),設置於凹槽結構108中並位於第一反射面108a與第二反射面108b之間。基板100之設置有凹槽結構108的部分構成一矽基微光學平台(Silicon Optical Bench)108,位於凹槽結構108之相對二側面的第一反射面108a及第二反射面108b分別具有45度角,以作為各式光電元件中所需之光學反射面。上述光電元件106可配置於接近凹槽結構108之一側,例如第一反射面108a。舉例而言,光電元件106設置於基板100上,其中光電元件106適於提供或接收一光訊號,且第一反射面108a與第二反射面108b皆位於光訊號之光路徑上。導光結構107例如包含折射率約1.4~1.6的高分子材料,其可以利用薄膜沉積製程來製作以達到波導的效應。導光結構107可以選擇填滿或不填滿於對應的凹槽結構108之中,端視實際應用而定。The substrate 100 is, for example, a tantalum interposer 100 (Silicon Interposer). The light guiding structure 107 is a waveguide, disposed in the groove structure 108 and located between the first reflecting surface 108a and the second reflecting surface 108b. The portion of the substrate 100 provided with the recess structure 108 constitutes a Silicon Optical Bench 108, and the first reflective surface 108a and the second reflective surface 108b on opposite sides of the recess structure 108 have 45 degrees respectively. The angle is used as the optical reflecting surface required in various types of photovoltaic elements. The above-described photovoltaic element 106 can be disposed on one side of the groove structure 108, such as the first reflective surface 108a. For example, the optoelectronic component 106 is disposed on the substrate 100, wherein the optoelectronic component 106 is adapted to provide or receive an optical signal, and the first reflective surface 108a and the second reflective surface 108b are both located on the optical path of the optical signal. The light guiding structure 107 includes, for example, a polymer material having a refractive index of about 1.4 to 1.6, which can be fabricated by a thin film deposition process to achieve the effect of the waveguide. The light guiding structure 107 can be selected to fill or not fill in the corresponding groove structure 108, depending on the actual application.

舉一實施例而言,基板100除了可以作為驅動積體電路/轉阻放大器(Driver IC/TIA)或垂直共振腔表面放射雷射/光檢測器(VCSEL/PD)的次封裝平台(sub-mount)之外,還可整合其他邏輯元件(logic device)、記憶體(memory)或整合被動元件(Integrated Passive Devices,IPD)等元件於其上。在另一實施例中,可以整合處理晶片、中央處理單元晶片、影像晶片、音效晶片或資料晶片。In one embodiment, the substrate 100 can be used as a sub-package platform (sub-- for driving integrated circuit/transistor amplifier (Driver IC/TIA) or vertical cavity surface radiation laser/photodetector (VCSEL/PD). In addition to mount, other logic devices, memory, or integrated passive components (IPD) can be integrated on them. In another embodiment, the processing wafer, central processing unit wafer, image wafer, audio chip, or data wafer can be integrated.

光電模組10更包括一層板111,層板111配置於基板100之下,下導電凸塊104電性耦合層板111及矽穿孔101。在另一實施例中,一第二擴散式導電圖案(圖未示)可選擇配置於基板100之下表面並連接下導電凸塊104。上述之第二擴散式導電圖案102a可以使得基板100之下表面接腳被擴散式散出,以提供其他裝置與之有較好之連接,並可以減低接腳間之電磁干擾。層板111例如為一印刷電路板,其係透過其下的導電凸塊112以電性耦合外部元件。另外,光電模組更包括一具有一調光部件109之外殼110。其中調光部件109之位置對應第二反射面108b之位置並位於光訊號之光路徑上;其中調光部件109為一透鏡。在一例子中,外殼110係密封整體基板100於層板111之上。控制晶片105為一控制單元,設置於基板100之上表面上,且電性連接矽穿孔101及光電元件106,以控制光電元件106。The photovoltaic module 10 further includes a layer 111. The layer 111 is disposed under the substrate 100, and the lower conductive bumps 104 electrically couple the layer 111 and the turns 101. In another embodiment, a second diffusion conductive pattern (not shown) may be selectively disposed on the lower surface of the substrate 100 and connected to the lower conductive bumps 104. The second diffusion conductive pattern 102a described above can cause the lower surface pins of the substrate 100 to be diffusedly dispersed to provide better connection between other devices and to reduce electromagnetic interference between the pins. The laminate 111 is, for example, a printed circuit board that is electrically coupled to the external components through the conductive bumps 112 thereunder. In addition, the optoelectronic module further includes a housing 110 having a dimming component 109. The position of the dimming member 109 corresponds to the position of the second reflecting surface 108b and is located on the optical path of the optical signal; wherein the dimming member 109 is a lens. In one example, the outer casing 110 seals the unitary substrate 100 above the ply 111. The control wafer 105 is a control unit disposed on the upper surface of the substrate 100 and electrically connected to the via hole 101 and the photovoltaic element 106 to control the photovoltaic element 106.

在一實施例中,基板100作為矽中介層材料,若要與位於底面之層板111電性耦合,需要滿足層板111中的導線(trace)之精度;而若層板111為印刷電路板(PCB),則基板100之下的下導電凸塊104需要滿足印刷電路板111的製程精度。換言之,為了要使得控制晶片105與底下的印刷電路板111電性耦合,下導電凸塊104係藉由第二擴散式導電圖案將其電性向外擴散式分佈,而下導電凸塊104之間距設定會依據印刷電路板111的精度要求而定。倘若層板111為氧化鋁基板,則基板100之下的下導電凸塊104之間距可以較小。In one embodiment, the substrate 100 is used as a germanium interposer material. To be electrically coupled to the laminate 111 on the bottom surface, it is necessary to meet the accuracy of the traces in the laminate 111; and if the laminate 111 is a printed circuit board. (PCB), the lower conductive bumps 104 under the substrate 100 need to meet the process precision of the printed circuit board 111. In other words, in order to electrically couple the control wafer 105 to the underlying printed circuit board 111, the lower conductive bumps 104 are electrically outwardly diffused by the second diffusion conductive pattern, and the lower conductive bumps 104 are spaced apart. The setting will depend on the accuracy requirements of the printed circuit board 111. If the laminate 111 is an alumina substrate, the distance between the lower conductive bumps 104 under the substrate 100 may be small.

矽穿孔101之深度取決於通孔種類(先形成通孔或後形成通孔)及其應用。矽穿孔101之通孔深度係自20微米至500微米,通常介於約50微米至約250微米。矽穿孔101之通孔開口具有一入口大小(via size),諸如在介於約20微米至約200微米等級之直徑,通常介於約25微米至約75微米。矽穿孔101之深寬比(aspect ratio)係自0.3:1至大於20:1,例如係介於約4:1至約15:1。The depth of the ruthenium perforation 101 depends on the type of via hole (the via hole is formed first or the via hole is formed later) and its application. The through-hole depth of the perforated 101 is from 20 microns to 500 microns, typically between about 50 microns and about 250 microns. The via opening of the ruthenium perforation 101 has a via size, such as a diameter between about 20 microns and about 200 microns, and typically between about 25 microns and about 75 microns. The aspect ratio of the perforated 101 is from 0.3:1 to greater than 20:1, such as between about 4:1 and about 15:1.

舉一實施例而言,矽穿孔101之通孔,即第一穿孔結構,包含一在基板上表面之開口、從基板上表面延伸之側壁、及一底部,形成矽穿孔101之方法包含:將基板100浸入一電解金屬(例如:銅)沉積組成物,其中電解金屬(例如:銅)沉積組成物包含:金屬(例如:銅)離子源、酸(選自無機酸、有機磺酸、及/或其混合物)、一或多種有機化合物(促使通孔底部之銅沉積速度比通孔開口處之金屬沉積速度快)、以及氯化物離子;及將電流供應至電解沉積組成物使銅金屬沉積在底部及側壁上以供由下至上填充,因而產生銅填充之矽穿孔101。In one embodiment, the through hole of the through hole 101, that is, the first through structure, includes an opening on the upper surface of the substrate, a sidewall extending from the upper surface of the substrate, and a bottom portion. The method of forming the through hole 101 includes: The substrate 100 is immersed in an electrolytic metal (eg, copper) deposition composition, wherein the electrolytic metal (eg, copper) deposition composition comprises: a metal (eg, copper) ion source, an acid (selected from a mineral acid, an organic sulfonic acid, and/or Or a mixture thereof, one or more organic compounds (causing copper deposition at the bottom of the via to be deposited faster than the metal at the opening of the via), and chloride ions; and supplying current to the electrolytic deposition composition to deposit copper metal The bottom and side walls are filled from bottom to top, thereby creating a copper filled crucible 101.

控制晶片105例如為一驅動電路晶片、控制晶片或轉阻放大器(Trans-impedance Amplifier:TIA)晶片,其中驅動電路晶片可以用以驅動光電元件106使其發光。控制晶片105與光電元件106係透過擴散式導電圖案102連接上導電凸塊103a/103b,而彼此電性溝通。控制晶片105與層板111係透過控制晶片105下之上導電凸塊103a、擴散式導電圖案102、矽穿孔101、下導電凸塊104而彼此電性溝通。矽穿孔101電性連接擴散式導電圖案102與下導電凸塊104。光電元件106可為光發射或接收元件,例如為雷射、垂直共振腔表面放射雷射(VCSEL:Vertical Cavity Surface Emitting Laser)、光檢測器(Photo-Detector)或發光二極體。以光發射元件舉例而言,光電元件106主要之功能係根據控制晶片105所傳遞之電信號來產生或發射出對應轉換後的光束或光信號以進行傳輸。光電元件106所發射之雷射光束經由第一反射面108a而反射,經由導光結構107而在其內傳輸,之後經由第二反射面108b而將雷射光束垂直導引出基板100。舉例而言,光電元件106之發射光的光路徑包含:光電元件106之出光口→導光結構107→45度反射面108a→導光結構107中傳輸→45度反射面108b→導光結構107→出光→經由調光部件109而與外界光電元件耦合。光電元件106之接收的光路徑為與上述相反之,其中光電元件106則為接收端。The control wafer 105 is, for example, a driver circuit wafer, a control wafer or a Trans-impedance Amplifier (TIA) wafer, wherein the driver circuit wafer can be used to drive the photovoltaic element 106 to emit light. The control wafer 105 and the photovoltaic element 106 are electrically connected to each other via the diffusion conductive pattern 102 to the upper conductive bumps 103a/103b. The control wafer 105 and the layer 111 are electrically connected to each other through the conductive bumps 103a, the diffusion conductive patterns 102, the via holes 101, and the lower conductive bumps 104 under the control wafer 105. The germanium via 101 is electrically connected to the diffusion conductive pattern 102 and the lower conductive bump 104. The optoelectronic component 106 can be a light emitting or receiving component such as a laser, a Vertical Cavity Surface Emitting Laser (VCSEL), a Photo-Detector, or a light emitting diode. By way of example, a light emitting element, the main function of the photovoltaic element 106 is to generate or emit a corresponding converted beam or optical signal for transmission based on the electrical signal transmitted by the control wafer 105. The laser beam emitted by the photovoltaic element 106 is reflected by the first reflecting surface 108a, transmitted therein via the light guiding structure 107, and then the laser beam is vertically guided out of the substrate 100 via the second reflecting surface 108b. For example, the light path of the light emitted by the photoelectric element 106 includes: a light exit of the photoelectric element 106 → a light guiding structure 107 → a 45 degree reflecting surface 108 a → a light transmitting structure 107 → a 45 degree reflecting surface 108 b → a light guiding structure 107 → Light emission → Coupling with the external photovoltaic element via the light adjustment member 109. The optical path of the optoelectronic component 106 is opposite to that described above, wherein the optoelectronic component 106 is the receiving end.

舉一實施例而言,經由導光結構107出光之雷射光束可以經由調光部件109以進一步進行光型的調整,然後加以耦合至外部光纖或另一導光結構。舉一實施例而言,調光部件109之結構誤差容忍度(Tolerance)為±10微米,調光部件109之對準誤差容忍度為±20微米。調光部件109可為光學透鏡或準直透鏡(collimation lens)。光學透鏡例如為塑膠光學透鏡。In one embodiment, the laser beam exiting light through the light directing structure 107 can be further optically adjusted via the dimming component 109 and then coupled to an external fiber or another light directing structure. For one embodiment, the structural error tolerance of the dimming member 109 is ±10 microns, and the alignment error tolerance of the dimming member 109 is ±20 microns. The dimming member 109 can be an optical lens or a collimation lens. The optical lens is, for example, a plastic optical lens.

第二圖顯示為根據本發明之另一實施例之光電模組之示意圖。在本實施例中,基板100a包含二個凹槽結構(第一凹槽結構108d、第二凹槽結構108c)形成於基板100a上。其中導光結構107a配置於第二凹槽結構108c內,此導光結構107a例如為光纖。上述光電元件106可配置於接近第二凹槽結構108c之一側面,控制晶片105則配置於第一凹槽結構108d內。另,第二凹槽結構108c之靠近光電元件106之側面可以製作為45度反射面。本發明之實施例藉由形成第一凹槽結構108d將可降低矽穿孔101的深度,使得矽穿孔101之製作變得容易。第一凹槽結構108d之製作可以彈性地選擇濕式蝕刻、乾式蝕刻或者是濕式及乾式蝕刻。此外,利用高頻的導線(trace)102b形成於第一凹槽結構108d之底面及側面上與基板100a之部分上表面,並且透過上導電凸塊103a與103b而電性連接控制晶片105與光電元件106。此外,在本實施例中,球格陣列(BGA)型態的封裝結構可以用於連接印刷電路版111,而無需焊接線(wire-bonding)。The second figure shows a schematic view of a photovoltaic module in accordance with another embodiment of the present invention. In the present embodiment, the substrate 100a includes two groove structures (a first groove structure 108d and a second groove structure 108c) formed on the substrate 100a. The light guiding structure 107a is disposed in the second groove structure 108c, and the light guiding structure 107a is, for example, an optical fiber. The photo-electric element 106 can be disposed on a side of the second recess structure 108c, and the control wafer 105 is disposed in the first recess structure 108d. Alternatively, the side of the second recess structure 108c adjacent to the optoelectronic component 106 can be formed as a 45 degree reflective surface. Embodiments of the present invention can reduce the depth of the pupil perforation 101 by forming the first groove structure 108d, making the fabrication of the pupil perforation 101 easy. The fabrication of the first recess structure 108d can elastically select wet etching, dry etching, or wet and dry etching. In addition, a high-frequency trace 102b is formed on the bottom surface and the side surface of the first recess structure 108d and a portion of the upper surface of the substrate 100a, and is electrically connected to the control wafer 105 and the photoelectric through the upper conductive bumps 103a and 103b. Element 106. Further, in the present embodiment, a package structure of a ball grid array (BGA) type can be used to connect the printed circuit board 111 without wire-bonding.

第三圖顯示為根據本發明之一實施例之光電模組之示意圖。在本實施例中,第二凹槽結構108e與第二圖之第二凹槽結構108c之深度具有差異。舉例而言,第二凹槽結構108e與第一凹槽結構108d係利用相同的蝕刻製程或步驟所形成,因此其深度約略相等,並且其深度大於第二圖之第二凹槽結構108c之深度。The third figure shows a schematic diagram of a photovoltaic module in accordance with an embodiment of the present invention. In the present embodiment, the second groove structure 108e has a difference from the depth of the second groove structure 108c of the second figure. For example, the second groove structure 108e and the first groove structure 108d are formed by the same etching process or step, so that the depth thereof is approximately equal, and the depth thereof is greater than the depth of the second groove structure 108c of the second figure. .

在本實施例中,第一穿孔結構係形成於基板100a中,由第一凹槽結構108d之底面延伸至基板100a之下表面,並填入第一導電材料以形成矽穿孔101。第二穿孔結構係形成於基板100a中,由基板100a之上表面延伸至基板100a之下表面,第二導電材料係填入第二穿孔結構中以形成矽穿孔101b,矽穿孔101b並電性連接光電元件106。In the present embodiment, the first perforated structure is formed in the substrate 100a, extends from the bottom surface of the first recess structure 108d to the lower surface of the substrate 100a, and is filled with the first conductive material to form the crucible hole 101. The second perforated structure is formed in the substrate 100a, extending from the upper surface of the substrate 100a to the lower surface of the substrate 100a, and the second conductive material is filled into the second perforated structure to form the crucible perforation 101b, and the perforation 101b is electrically connected Photoelectric element 106.

矽穿孔101b係直接穿透基板100a之位於光電元件106之下的部分,透過導電凸塊103b、104而電性耦接光電元件106與印刷電路版111。因此,本實施例可以直接於光電元件106位置之下製作矽穿孔101b而取代前述高頻導線102b之例子,並且透過矽穿孔101、矽穿孔101b將光電元件106與控制晶片105作整合。光電元件106與控制晶片105也可以透過矽穿孔101、印刷電路版111與矽穿孔101b而彼此電性連接。The through-hole 101b directly penetrates the portion of the substrate 100a under the photovoltaic element 106, and is electrically coupled to the photovoltaic element 106 and the printed circuit board 111 through the conductive bumps 103b and 104. Therefore, in this embodiment, the example of the high-frequency wire 102b can be formed directly under the position of the photovoltaic element 106 instead of the high-frequency wire 102b, and the photovoltaic element 106 and the control wafer 105 can be integrated through the through-hole 101 and the through-hole 101b. The photovoltaic element 106 and the control wafer 105 may also be electrically connected to each other through the via hole 101, the printed circuit board 111, and the turn-by-hole 101b.

第四圖顯示為根據本發明之一實施例之光電模組之示意圖。在本實施例中,對於光電積體電路型態(OE IC type)、球格陣列(BGA)型態的封裝結構可以用於連接陶瓷基板結構111。此外,上蓋(case)110b覆蓋並保護整體光電模組以免受外在環境汙染。舉例而言,導電凸塊112外露於上蓋110b之外以利於連接外部元件。在另一實施例中,上蓋(case)110b僅覆蓋基板100a上的光電元件106、控制晶片105與導光結構107a,如第五圖所示。The fourth figure shows a schematic diagram of a photovoltaic module in accordance with an embodiment of the present invention. In the present embodiment, a package structure for an OE IC type or a ball grid array (BGA) type can be used to connect the ceramic substrate structure 111. In addition, the case 110b covers and protects the overall photovoltaic module from external environmental contamination. For example, the conductive bumps 112 are exposed outside the upper cover 110b to facilitate connection of external components. In another embodiment, the upper case 110b covers only the photovoltaic element 106, the control wafer 105, and the light guiding structure 107a on the substrate 100a, as shown in the fifth figure.

第六圖顯示為根據本發明之再一實施例之光電模組之示意圖。在本實施例中,基板100b具有一凹槽結構108f,而光電元件106與控制晶片105係整合於基板100b之凹槽結構108f中。其中光電元件106與控制晶片105係分別透過矽穿孔101與矽穿孔101b而電性耦合印刷電路版111。導光結構107b係配置於基板100b上。基板100b置於印刷電路版111之上。舉例而言,光電元件106之主動區與接觸墊位於同一側。本實施例中,光電模組更包括一上層結構(top structure)110c,配置於導光結構107b之上,並搭配基板100b而固定導光結構107b。此上層結構110c具有45度反射面,以利於光電元件106之垂直出光得以經由此45度反射面之反射而以水平方向前進至導光結構107b而傳輸至外部。在此實施例中,光電元件106與控制晶片105係透過矽穿孔101、印刷電路版111與矽穿孔101b而彼此電性連接。Figure 6 is a schematic illustration of a photovoltaic module in accordance with yet another embodiment of the present invention. In the present embodiment, the substrate 100b has a recess structure 108f, and the photovoltaic element 106 and the control wafer 105 are integrated into the recess structure 108f of the substrate 100b. The photoelectric element 106 and the control wafer 105 are electrically coupled to the printed circuit board 111 through the through-holes 101 and the through-holes 101b, respectively. The light guiding structure 107b is disposed on the substrate 100b. The substrate 100b is placed over the printed circuit board 111. For example, the active area of the photovoltaic element 106 is on the same side as the contact pad. In this embodiment, the optoelectronic module further includes a top structure 110c disposed on the light guiding structure 107b and fixed to the light guiding structure 107b with the substrate 100b. The upper structure 110c has a 45-degree reflecting surface for facilitating the vertical light output of the photovoltaic element 106 to be advanced to the light guiding structure 107b in the horizontal direction and transmitted to the outside through the reflection of the 45-degree reflecting surface. In this embodiment, the photovoltaic element 106 and the control wafer 105 are electrically connected to each other through the through-hole 101, the printed circuit board 111 and the meandering hole 101b.

第一穿孔結構係形成於基板100b中,由凹槽結構108f之底面延伸至基板100b之下表面,第一穿孔結構中並填入第一導電材料以形成矽穿孔101,並電性連接控制晶片105。第二穿孔結構係形成於基板100b中,由凹槽結構100b之底面延伸至基板100b之下表面,第二導電材料係填入第二穿孔結構中以形成矽穿孔101b,並電性連接光電元件106。The first perforated structure is formed in the substrate 100b, and extends from the bottom surface of the recess structure 108f to the lower surface of the substrate 100b. The first perforated structure is filled with the first conductive material to form the crucible hole 101, and is electrically connected to the control wafer. 105. The second perforated structure is formed in the substrate 100b, extending from the bottom surface of the recess structure 100b to the lower surface of the substrate 100b, and the second conductive material is filled into the second perforated structure to form the crucible hole 101b, and electrically connected to the photoelectric element 106.

此外,如第七圖所示,在另一實施例中,僅有光電元件106配置於基板100b之凹槽結構108f內,而控制晶片105係配置於另一基板上,例如陶瓷基板(Ceramics sub-mount)111上導電凸塊103a設置於陶瓷基板111上,矽穿孔101設置於陶瓷基板111中並電性連接上導電凸塊103a及導電凸塊112,控制晶片105係透過上導電凸塊103a而電性耦接矽穿孔101,且透過矽穿孔101而電性耦接陶瓷基板111下之導電凸塊112;焊接線(wire-bonding)122電性連接光電元件106與矽穿孔101。基於陶瓷基板結構,本實施例可以整合至球格陣列(BGA)型態或平面閘格陣列(Land Grid Array;LGA)型態光電積體電路上。在此實施例中,可以包含另一控制晶片105a,透過擴散式導電圖案102c而電性連接其他元件;控制晶片105a可以透過矽穿孔101而電性耦接陶瓷基板111上之導線電路;光電元件106與控制晶片105及/或控制晶片105a係透過矽穿孔101及陶瓷基板111之上或下之導線電路與焊接線122電性連接。In addition, as shown in the seventh embodiment, in another embodiment, only the photovoltaic element 106 is disposed in the recess structure 108f of the substrate 100b, and the control wafer 105 is disposed on another substrate, such as a ceramic substrate (Ceramics sub The conductive bumps 103a are disposed on the ceramic substrate 111. The vias 101 are disposed in the ceramic substrate 111 and electrically connected to the upper conductive bumps 103a and the conductive bumps 112. The control wafers 105 are transmitted through the upper conductive bumps 103a. The vias 101 are electrically coupled to the vias 101 and electrically coupled to the conductive bumps 112 under the ceramic substrate 111 through the vias 101. The wire-bondings 122 are electrically connected to the photovoltaic elements 106 and the vias 101. Based on the ceramic substrate structure, the present embodiment can be integrated into a ball grid array (BGA) type or a Land Grid Array (LGA) type optoelectronic integrated circuit. In this embodiment, another control wafer 105a may be included, and the other components are electrically connected through the diffusion conductive pattern 102c. The control wafer 105a may be electrically coupled to the conductor circuit on the ceramic substrate 111 through the via hole 101. The control wafer 105 and/or the control wafer 105a are electrically connected to the bonding wire 122 through the wire circuit above or below the silicon via hole 101 and the ceramic substrate 111.

光電模組可連接一光纖連接器(fiber connector)以用於傳遞光訊號予外部元件。The optoelectronic module can be connected to a fiber connector for transmitting optical signals to external components.

綜合上述,本發明之實施例提出一種新的光電模組結構,整合導光結構與矽穿孔結構,使得IC與VCSEL/PD整合至單一基板上。In summary, the embodiment of the present invention proposes a new photovoltaic module structure, which integrates the light guiding structure and the 矽-perforated structure, so that the IC and the VCSEL/PD are integrated on a single substrate.

基板整合矽穿孔結構、導光結構(例如光波導)與45度反射面,可以將電訊號經由矽穿孔而傳送至一特定功能之晶片(IC),進而驅動VCSEL主動元件發光。光訊號進入導光結構之後,經過兩次45度面的反射之後,可以將光束轉折至正向(上)出光,且導光結構可以做高效率的光束導引。The substrate is integrated with a perforated structure, a light guiding structure (such as an optical waveguide) and a 45-degree reflecting surface, and the electrical signal can be transmitted to a specific function wafer (IC) via the boring, thereby driving the VCSEL active device to emit light. After the optical signal enters the light guiding structure, after two 45-degree reflections, the light beam can be turned to the forward (upper) light, and the light guiding structure can perform high-efficiency beam guiding.

本發明實施例之光電模組由於矽穿孔結構對於IC與VCSEL/PD無須打線(Wire)製程便可完成模組的構裝,在高頻特性、高速傳輸、元件組裝速度上獲得提升。導光結構可以利用折射率約1.4~1.6的高分子材料,或者利用薄膜沉積製程製作以達到波導的效應。The photoelectric module of the embodiment of the invention can complete the module assembly for the IC and VCSEL/PD without a wire (Wire) process, and the high-frequency characteristics, high-speed transmission, and component assembly speed are improved. The light guiding structure can be made of a polymer material having a refractive index of about 1.4 to 1.6, or can be fabricated by a thin film deposition process to achieve the effect of the waveguide.

對熟悉此領域技藝者,本發明雖以實例闡明如上,然其並非用以限定本發明之精神。在不脫離本發明之精神與範圍內所作之修改與類似的配置,均應包含在下述之申請專利範圍內,此範圍應覆蓋所有類似修改與類似結構,且應做最寬廣的詮釋。The present invention has been described above by way of example, and is not intended to limit the scope of the invention. Modifications and similar configurations made within the spirit and scope of the invention are intended to be included within the scope of the appended claims.

10...光電模組10. . . Photoelectric module

100、100a、100b...基板100, 100a, 100b. . . Substrate

101、101b...矽穿孔101, 101b. . . Piercing

102、102a、102c...擴散式導電圖案102, 102a, 102c. . . Diffused conductive pattern

102b...導線102b. . . wire

103a、103b...上導電凸塊103a, 103b. . . Upper conductive bump

104...下導電凸塊104. . . Lower conductive bump

105、105a...控制晶片105, 105a. . . Control chip

106...光電元件106. . . Optoelectronic component

107、107a、107b...導光結構107, 107a, 107b. . . Light guiding structure

108、108c、108d、108e、108f...凹槽結構108, 108c, 108d, 108e, 108f. . . Groove structure

108a...第一反射面108a. . . First reflecting surface

108b...第二反射面108b. . . Second reflecting surface

109...調光部件109. . . Dimming unit

110...外殼110. . . shell

110b...上蓋110b. . . Upper cover

110c...上層結構110c. . . Superstructure

111...層板、印刷電路板、陶瓷基板111. . . Laminate, printed circuit board, ceramic substrate

112...導電凸塊112. . . Conductive bump

122...焊接線122. . . Welding line

第一圖顯示根據本發明之一實施例之光電模組之示意圖。The first figure shows a schematic diagram of a photovoltaic module in accordance with an embodiment of the present invention.

第二圖顯示根據本發明之又一實施例之光電模組之示意圖。The second figure shows a schematic view of a photovoltaic module in accordance with yet another embodiment of the present invention.

第三圖顯示根據本發明之再一實施例之光電模組之示意圖。The third figure shows a schematic view of a photovoltaic module in accordance with yet another embodiment of the present invention.

第四圖顯示根據本發明之另一實施例之光電模組之示意圖。The fourth figure shows a schematic view of a photovoltaic module in accordance with another embodiment of the present invention.

第五圖顯示根據本發明之又一實施例之光電模組之示意圖。Figure 5 is a schematic illustration of a photovoltaic module in accordance with yet another embodiment of the present invention.

第六圖顯示根據本發明之再一實施例之光電模組之示意圖。Figure 6 is a schematic view showing a photovoltaic module according to still another embodiment of the present invention.

第七圖顯示根據本發明之一實施例之光電模組之上視示意圖與截面示意圖。Figure 7 is a schematic top and cross-sectional view of a photovoltaic module in accordance with an embodiment of the present invention.

10...光電模組10. . . Photoelectric module

100...基板100. . . Substrate

101...矽穿孔101. . . Piercing

102...擴散式導電圖案102. . . Diffused conductive pattern

103a、103b...上導電凸塊103a, 103b. . . Upper conductive bump

104...下導電凸塊104. . . Lower conductive bump

105...控制晶片105. . . Control chip

106...光電元件106. . . Optoelectronic component

107...導光結構107. . . Light guiding structure

108...凹槽結構108. . . Groove structure

108a...第一反射面108a. . . First reflecting surface

108b...第二反射面108b. . . Second reflecting surface

109...調光部件109. . . Dimming unit

110...外殼110. . . shell

111...層板111. . . Laminate

112...導電凸塊112. . . Conductive bump

Claims (22)

一種光電模組,包含:一基板,具有一上表面、一下表面、一凹槽結構、一穿孔結構及一導電材料,其中該上表面與該下表面相對,該凹槽結構設置於該上表面且具有兩相對之第一反射面及第二反射面,該穿孔結構由該上表面穿過該基板至該下表面,該穿孔結構中填滿該導電材料,該穿孔結構之深寬比的範圍係自0.3:1至大於20:1;一光電元件,設置於該基板上,其中該光電元件適於提供或接收一光訊號,且該第一反射面與該第二反射面皆位於該光訊號之光路徑上;以及一控制單元,設置於該基板之該上表面上,且電性連接該導電材料及該光電元件,以控制該光電元件。 An optoelectronic module includes: a substrate having an upper surface, a lower surface, a groove structure, a perforated structure, and a conductive material, wherein the upper surface is opposite to the lower surface, and the groove structure is disposed on the upper surface And having two opposite first reflective surfaces and a second reflective surface, the perforated structure is passed through the substrate to the lower surface, the perforated structure is filled with the conductive material, and the aspect ratio of the perforated structure The light-emitting element is disposed on the substrate, wherein the photoelectric element is adapted to provide or receive an optical signal, and the first reflective surface and the second reflective surface are located in the light a light path of the signal; and a control unit disposed on the upper surface of the substrate and electrically connecting the conductive material and the photovoltaic element to control the photoelectric element. 如請求項1所述之光電模組,更包括一導光結構,設置於該凹槽結構中並位於該第一反射面與該第二反射面之間,其中該導光結構位於該光訊號之該光路徑上。 The photoelectric module of claim 1, further comprising a light guiding structure disposed in the groove structure and located between the first reflecting surface and the second reflecting surface, wherein the light guiding structure is located at the optical signal On the light path. 如請求項1所述之光電模組,更包括一擴散式導電圖案,形成於該基板之該上表面,其中該控制單元透過該擴散式導電圖案電性連接該光電元件,該擴散式導電圖案使得該控制單元之下表面接腳被擴散式散出至該控制單元所覆蓋面積之外。 The photovoltaic module of claim 1, further comprising a diffusion conductive pattern formed on the upper surface of the substrate, wherein the control unit is electrically connected to the photovoltaic element through the diffusion conductive pattern, the diffusion conductive pattern The lower surface of the control unit is diffused out of the area covered by the control unit. 如請求項1所述之光電模組,更包括一具有一調光元件之外殼,設置於該基板之上,其中該調光元件之位置對應該第二反射面之位置並位於該光訊號之該光路徑上,該外殼係密封整體該基板於一層板之上。 The optical module of claim 1, further comprising a housing having a dimming component disposed on the substrate, wherein the position of the dimming component corresponds to a position of the second reflecting surface and is located in the optical signal In the light path, the outer casing seals the substrate over a layer of the substrate. 如請求項4所述之光電模組,其中該調光元件為一透鏡。 The optoelectronic module of claim 4, wherein the dimming element is a lens. 一種光電模組,包含:一基板,具有一上表面、一下表面、一第一凹槽結構、一第一穿孔結構及一第一導電材料,其中該上表面與該下表面相對,該第一凹槽結構設置於該上表面,該第一穿孔結構由該第一凹槽結構之底面穿過該基板至該下表面,該第一穿孔結構中填滿該第一導電材料;一光電元件,設置於該基板上,其中該光電元件適於提供或接收一光訊號;一導光結構,設置於該基板上,且該導光結構係位於該光訊號之光路徑上;以及一控制單元,設置於該第一凹槽結構中,且電性連接該第一導電材料及該光電元件,以控制該光電元件。 An optoelectronic module includes: a substrate having an upper surface, a lower surface, a first recess structure, a first perforated structure, and a first conductive material, wherein the upper surface is opposite to the lower surface, the first a groove structure is disposed on the upper surface, the first perforated structure passes through the substrate from the bottom surface of the first groove structure to the lower surface, the first perforated structure is filled with the first conductive material; a photoelectric element, Provided on the substrate, wherein the optoelectronic component is adapted to provide or receive an optical signal; a light guiding structure is disposed on the substrate, and the light guiding structure is located on the optical path of the optical signal; and a control unit, The first groove structure is electrically connected to the first conductive material and the photoelectric element to control the photoelectric element. 如請求項6所述之光電模組,更包括一第二凹槽結構,形成於該基板之該上表面且具有一反射面,其中該反射面係位於該光訊號之該光路徑上且用以於該光電元件 與該導光結構之間傳遞該光訊號。 The photoelectric module of claim 6, further comprising a second recess structure formed on the upper surface of the substrate and having a reflective surface, wherein the reflective surface is located on the optical path of the optical signal and used For the optoelectronic component The optical signal is transmitted between the light guiding structure. 如請求項6所述之光電模組,更包括一擴散式導電圖案,形成於該基板之該上表面,並電性連接該光電元件與該控制單元,該擴散式導電圖案使得該控制單元之下表面接腳被擴散式散出至該控制單元所覆蓋面積之外。 The photovoltaic module of claim 6, further comprising a diffusion conductive pattern formed on the upper surface of the substrate and electrically connected to the photovoltaic element and the control unit, the diffusion conductive pattern making the control unit The lower surface pins are diffused out of the area covered by the control unit. 如請求項8所述之光電模組,更包括複數個第一導電塊,形成於該控制單元與該基板之間,其中該控制單元透過該複數個第一導電塊電性連結該第一導電材料及該擴散式導電圖案。 The photoelectric module of claim 8, further comprising a plurality of first conductive blocks formed between the control unit and the substrate, wherein the control unit electrically connects the first conductive through the plurality of first conductive blocks Material and the diffused conductive pattern. 如請求項8所述之光電模組,更包括至少一第二導電塊,形成於該光電元件與該基板之間,其中該光電元件透過該至少一第二導電塊電性連接該擴散式導電圖案。 The photovoltaic module of claim 8, further comprising at least one second conductive block formed between the photovoltaic element and the substrate, wherein the photovoltaic element is electrically connected to the diffusion conductive through the at least one second conductive block pattern. 如請求項6所述之光電模組,其中該基板更包括一第二穿孔結構及一第二導電材料,其中該第二穿孔結構由該上表面穿過該基板至該下表面,且該第二穿孔結構中填滿該第二導電材料,該第二導電材料連接該光電元件。 The photovoltaic module of claim 6, wherein the substrate further comprises a second perforated structure and a second electrically conductive material, wherein the second perforated structure passes through the substrate from the upper surface to the lower surface, and the The second via structure is filled with the second conductive material, and the second conductive material is connected to the photovoltaic element. 如請求項11所述之光電模組,更包括一印刷電路板,位於該基板之下方並電性連接該第一導電材料及該第二導電材料。 The optoelectronic module of claim 11, further comprising a printed circuit board disposed under the substrate and electrically connecting the first conductive material and the second conductive material. 一種光電模組,包含:一第一基板,具有一上表面、一下表面、一凹槽結構,其中該上表面與該下表面相對,該凹槽結構設置於該上表面;一光電元件,設置於該凹槽結構中,其中該光電元件適於提供或接收一光訊號;一導光結構,設置於該第一基板之該上表面上,且該導光結構係位於該光訊號之光路徑上;一上層結構,設置於該第一基板之上方,用以搭配該第一基板固定該導光結構,其中該上層結構具有一位於該光訊號之光路徑上的反射面,用以於該光電元件與該導光結構之間傳遞該光訊號;一第一穿孔結構,該第一穿孔結構之深寬比的範圍係自0.3:1至大於20:1;一第一導電材料,填入該第一穿孔結構中;以及一控制單元,電性連接該第一導電材料及該光電元件,以控制該光電元件。 An optoelectronic module includes: a first substrate having an upper surface, a lower surface, and a groove structure, wherein the upper surface is opposite to the lower surface, the groove structure is disposed on the upper surface; a photoelectric element is disposed In the recessed structure, the optoelectronic component is adapted to provide or receive an optical signal; a light guiding structure is disposed on the upper surface of the first substrate, and the light guiding structure is located in the optical path of the optical signal An upper layer structure is disposed above the first substrate for fixing the light guiding structure with the first substrate, wherein the upper layer structure has a reflective surface on the optical path of the optical signal for Transmitting the optical signal between the photoelectric element and the light guiding structure; a first perforated structure having an aspect ratio ranging from 0.3:1 to greater than 20:1; a first conductive material filled in In the first perforated structure; and a control unit electrically connecting the first conductive material and the optoelectronic component to control the optoelectronic component. 如請求項13所述之光電模組,其中該第一穿孔結構係形成於第一基板中,由該凹槽結構之底面延伸至該第一基板之該下表面。 The optoelectronic module of claim 13, wherein the first perforated structure is formed in the first substrate, and extends from a bottom surface of the recess structure to the lower surface of the first substrate. 如請求項13所述之光電模組,更包括一第二穿孔結構 及一第二導電材料,其中該第二穿孔結構係形成於該第一基板中,由該凹槽結構之底面延伸至該第一基板之該下表面,該第二導電材料係填入該第二穿孔結構中並電性連接該光電元件。 The photovoltaic module of claim 13, further comprising a second perforated structure And a second conductive material, wherein the second perforated structure is formed in the first substrate, and extends from a bottom surface of the recess structure to the lower surface of the first substrate, wherein the second conductive material is filled in the first conductive material The optoelectronic component is electrically connected to the two via structures. 如請求項15所述之光電模組,更包括一印刷電路板,位於該基板之下方並電性連接該第一導電材料及該第二導電材料。 The optoelectronic module of claim 15 further comprising a printed circuit board disposed under the substrate and electrically connected to the first conductive material and the second conductive material. 如請求項13所述之光電模組,更包括一第二基板,位於該第一基板之下方,其中該第一穿孔結構係形成於該第二基板中,由該第二基板之上表面延伸至該第二基板之下表面。 The optoelectronic module of claim 13 further comprising a second substrate under the first substrate, wherein the first perforated structure is formed in the second substrate and extends from the upper surface of the second substrate To the lower surface of the second substrate. 如請求項17所述之光電模組,更包括一導電元件,電性連接該光電元件與該第一穿孔結構。 The optoelectronic module of claim 17, further comprising a conductive component electrically connected to the optoelectronic component and the first perforated structure. 如請求項17所述之光電模組,其中該第二基板為一陶瓷基板。 The photovoltaic module of claim 17, wherein the second substrate is a ceramic substrate. 如請求項1所述之光電模組,其中該穿孔結構之深寬比係介於4:1至15:1。 The photovoltaic module of claim 1, wherein the perforated structure has an aspect ratio of 4:1 to 15:1. 如請求項1所述之光電模組,其中該穿孔結構之通孔深 度係自20微米至500微米。 The photovoltaic module of claim 1, wherein the through hole of the perforated structure is deep Degrees range from 20 microns to 500 microns. 如請求項1所述之光電模組,其中該穿孔結構之通孔開口具有一入口大小介於20微米至200微米之直徑。 The photovoltaic module of claim 1, wherein the through-hole opening of the perforated structure has an inlet having a diameter ranging from 20 micrometers to 200 micrometers.
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