TWI448577B - - Google Patents

Info

Publication number
TWI448577B
TWI448577B TW101119503A TW101119503A TWI448577B TW I448577 B TWI448577 B TW I448577B TW 101119503 A TW101119503 A TW 101119503A TW 101119503 A TW101119503 A TW 101119503A TW I448577 B TWI448577 B TW I448577B
Authority
TW
Taiwan
Application number
TW101119503A
Other languages
Chinese (zh)
Other versions
TW201348500A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to TW101119503A priority Critical patent/TW201348500A/en
Publication of TW201348500A publication Critical patent/TW201348500A/en
Application granted granted Critical
Publication of TWI448577B publication Critical patent/TWI448577B/zh

Links

TW101119503A 2012-05-31 2012-05-31 Method of using chemical bonding to form compound epitaxial layer and epitaxial product TW201348500A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW101119503A TW201348500A (en) 2012-05-31 2012-05-31 Method of using chemical bonding to form compound epitaxial layer and epitaxial product

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW101119503A TW201348500A (en) 2012-05-31 2012-05-31 Method of using chemical bonding to form compound epitaxial layer and epitaxial product

Publications (2)

Publication Number Publication Date
TW201348500A TW201348500A (en) 2013-12-01
TWI448577B true TWI448577B (en) 2014-08-11

Family

ID=50157268

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101119503A TW201348500A (en) 2012-05-31 2012-05-31 Method of using chemical bonding to form compound epitaxial layer and epitaxial product

Country Status (1)

Country Link
TW (1) TW201348500A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113707526A (en) * 2020-05-20 2021-11-26 中微半导体设备(上海)股份有限公司 Component, method for forming plasma-resistant coating and plasma reaction device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020015791A1 (en) * 1999-03-17 2002-02-07 Ryoki Tobe Method and manufacturing device for manufacturing a titanium nitride thin film
TWI295823B (en) * 2004-12-09 2008-04-11 Samsung Electronics Co Ltd Method for forming a titanium nitride layer and method for forming a lower electrode of a mim capacitor using the titanium nitride layer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020015791A1 (en) * 1999-03-17 2002-02-07 Ryoki Tobe Method and manufacturing device for manufacturing a titanium nitride thin film
TWI295823B (en) * 2004-12-09 2008-04-11 Samsung Electronics Co Ltd Method for forming a titanium nitride layer and method for forming a lower electrode of a mim capacitor using the titanium nitride layer

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
民國99年7月，林雅雯，交通大學碩士論文"在具有氮化鈦緩衝層之(001)矽晶片上成長鑽石之研究" *

Also Published As

Publication number Publication date
TW201348500A (en) 2013-12-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees