TWI447774B - Method for controlling wien filter for scanning electron microscope and scanning electron microscope having electron beam aligning function - Google Patents

Method for controlling wien filter for scanning electron microscope and scanning electron microscope having electron beam aligning function Download PDF

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TWI447774B
TWI447774B TW100139223A TW100139223A TWI447774B TW I447774 B TWI447774 B TW I447774B TW 100139223 A TW100139223 A TW 100139223A TW 100139223 A TW100139223 A TW 100139223A TW I447774 B TWI447774 B TW I447774B
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filter
wynn
electron beam
electric field
calibration
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TW201318023A (en
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Souk Kim
Woo Rak Kum
Jae Hyung Ahn
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Snu Precision Co Ltd
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掃描電子顯微鏡用威恩濾質器的控制方法及具有電子束校準功能的掃描電子顯微鏡Control method for Wynn filter used in scanning electron microscope and scanning electron microscope with electron beam calibration function

本發明涉及一種掃描電子顯微鏡用威恩濾質器的控制方法及具有電子束校準功能的掃描電子顯微鏡,更為詳細地涉及一種藉由採用威恩濾質器,能夠校準電子束使之到達所希望的目標點的掃描電子顯微鏡用威恩濾質器的控制方法及具有電子束校準功能的掃描電子顯微鏡。The invention relates to a control method of a Wynn filter for a scanning electron microscope and a scanning electron microscope with an electron beam calibration function, and more particularly relates to a method for calibrating an electron beam to reach a place by using a Wynn filter. The desired target point is a scanning electron microscope using a control method of a Wynne mass filter and a scanning electron microscope having an electron beam calibration function.

最近不僅是資訊儀器的極小化趨勢,尖端材料領域也是由於極微細技術的產業化,切實地要求對於微細構造物或者材料表面形貌的資訊。特別是,從1990年代後半期開始,全世界對於納米的研究活躍起來,隨之開展了查明納米物質結構和特性的各項研究,而電子顯微鏡擔負著重要的軸的作用。Recently, it has not only been the minimization trend of information instruments, but also the field of cutting-edge materials is due to the industrialization of extremely fine technology, and it is required to provide information on the microstructure of fine structures or materials. In particular, since the second half of the 1990s, the world's research on nanotechnology has been active, and various studies have been carried out to identify the structure and properties of nanomaterials, and electron microscopy plays an important role in the axis.

近年來,一種掃描電子顯微鏡得到了廣泛的應用,該顯微鏡用1~100nm左右的微細電子束,在二維方向上掃描置於真空中的試樣的表面,並檢測在試樣表面上產生的二次電子的信號,在螢幕上顯示放大圖像或將此信號記錄下來,以分析試樣形態的微細構造等。In recent years, a scanning electron microscope has been widely used. The microscope scans the surface of a sample placed in a vacuum in a two-dimensional direction with a fine electron beam of about 1 to 100 nm, and detects the occurrence on the surface of the sample. The secondary electron signal displays an enlarged image on the screen or records the signal to analyze the fine structure of the sample form.

然而,以往為了使放射電子束能夠到達所希望的目標點而校準電子束的移動軌跡時,需要設置額外的定位裝置。However, in the past, in order to calibrate the movement trajectory of the electron beam in order to enable the radiation electron beam to reach the desired target point, it is necessary to provide an additional positioning device.

此外,在電子束的移動中,由於其剖面形狀變形,試樣檢測時的可靠性下降。Further, in the movement of the electron beam, the reliability of the sample is degraded due to the deformation of the cross-sectional shape.

因此,本發明的目的是解決這種以往的問題,提供一種掃描電子顯微鏡用威恩濾質器的控制方法及具有電子束校準功能的掃描電子顯微鏡,該控制方法及掃描電子顯微鏡無需設置額外的裝置,而採用威恩濾質器能夠控制電子束到達試樣上的所希望的目標點。Therefore, the object of the present invention is to solve such a conventional problem, and provide a control method for a Wynn filter for a scanning electron microscope and a scanning electron microscope having an electron beam calibration function, and the control method and the scanning electron microscope do not need to be provided with an additional The device, with the use of a Wynn filter, is capable of controlling the electron beam to reach a desired target point on the sample.

本發明的所述目的透過以下方案來實現。一種掃描電子顯微鏡用威恩濾質器的控制方法,應用於這樣一種掃描電子顯微鏡:使得從光源產生的電子束通過威恩濾質器而射入試樣後所放射出的放射電子通過所述威恩濾質器而射入檢測器,以檢測所述放射電子,所述控制方法的特徵在於,包括:計算步驟,用於計算需要對所述威恩濾質器施加的最終電場及最終磁場,所述最終電場及所述最終磁場用於使通過所述威恩濾質器的電子束到達所述試樣的目標點,並且使從所述試樣放射並通過所述威恩濾質器的放射電子到達所述檢測器;以及施加步驟,對所述威恩濾質器施加所述最終電場及所述最終磁場。The stated object of the present invention is achieved by the following scheme. A control method for a scanning electron microscope using a Wynn filter, which is applied to a scanning electron microscope that allows electron beams emitted from a light source to pass through a sample of a Wynn filter to emit radioactive electrons through the The Wein mass filter is injected into the detector to detect the radioactivity, and the control method is characterized by comprising: a calculating step for calculating a final electric field and a final magnetic field to be applied to the Wynn filter The final electric field and the final magnetic field are used to cause an electron beam passing through the Wynn filter to reach a target point of the sample and to radiate from the sample and pass the Wynn filter The emitted electrons reach the detector; and an applying step of applying the final electric field and the final magnetic field to the Wynn filter.

此外,所述計算步驟可包括:初始資訊獲取步驟,用於獲取需要對所述威恩濾質器施加的初始電場及初始磁場,所述初始電場及所述初始磁場用於使通過所述威恩濾質器的電子束向垂直下方移動,並且使從所述試樣放射並通過所述威恩濾質器的放射電子到達所述檢測器;以及校準資訊獲取步驟,用於獲取需要對所述威恩濾質器施加的校準電場及校準磁場,所述校準電場及所述校準磁場用於使所述電子束到達所述試樣的目標點。In addition, the calculating step may include: an initial information acquiring step of acquiring an initial electric field and an initial magnetic field to be applied to the Wynn filter, the initial electric field and the initial magnetic field being used to pass the The electron beam of the mass filter moves vertically downward, and causes the radiation emitted from the sample and passing through the Wynn filter to reach the detector; and a calibration information acquisition step for obtaining the required A calibration electric field applied by the Wynn filter and a calibration magnetic field, the calibration electric field and the calibration magnetic field being used to cause the electron beam to reach a target point of the sample.

此外,在所述施加步驟之前可進一步包括校正資訊獲取步驟,用於獲取所述威恩濾質器所需要的校正電場,所述校正電場用於校正所述電子束的剖面形狀,並且在所述施加步驟中對所述威恩濾質器施加的最終電場包括所述校正電場資訊。Furthermore, before the applying step, further comprising a correction information acquisition step for acquiring a correction electric field required by the Wynn filter, the correction electric field for correcting a cross-sectional shape of the electron beam, and The final electric field applied to the Wynn filter in the applying step includes the corrected electric field information.

此外,所述校準資訊獲取步驟可包括:目標點獲取步驟,獲取所述試樣上的所述目標點的位置;測距步驟,檢測從所述威恩濾質器到所述目標點的直線距離;以及最終水準力計算步驟,計算為了使所述電子束到達所述目標點位置而需要由所述威恩濾質器向所述電子束提供的最終水準力。Furthermore, the calibration information acquisition step may include a target point acquisition step of acquiring a position of the target point on the sample, and a ranging step of detecting a straight line from the Wynn filter to the target point The distance; and the final level force calculation step, calculating the final level of force required to be provided by the Wynn filter to the electron beam in order for the electron beam to reach the target point position.

此外,所述校準資訊獲取步驟在所述最終水準力計算步驟之後可進一步包括:校準資訊計算步驟,計算所述威恩濾質器所要求的校準電場及校準磁場,所述校準電場及所述校準磁場用於對所述電子束施加所述最終水準力,並且使通過所述威恩濾質器的所述放射電子到達所述檢測器。In addition, the calibration information obtaining step may further include: a calibration information calculation step of calculating a calibration electric field and a calibration magnetic field required by the Wynn filter, the calibration electric field and the A calibration magnetic field is used to apply the final leveling force to the electron beam and to cause the emitted electrons passing through the Wayne mass filter to reach the detector.

此外,藉由所述校準電場而施加於所述電子束的靜電力和藉由所述校準磁場而施加於所述電子束的磁力可為方向相同且大小相同。Further, the electrostatic force applied to the electron beam by the calibration electric field and the magnetic force applied to the electron beam by the calibration magnetic field may be the same direction and the same size.

本發明的所述目的透過以下技術方案來實現。一種具有電子束校準功能的掃描電子顯微鏡,用於檢測從光源產生的電子束射入試樣後從所述試樣放射出的放射電子,所述具有電子束校準功能的掃描電子顯微鏡的特徵在於,包括:檢測器,配置在所述電子束和所述試樣之間,用於檢測所述放射電子;威恩濾質器,配置在所述檢測器的下方,產生磁場及電場以控制所述電子束及所述放射電子的移動軌跡;以及控制部,控制施加於所述威恩濾質器的電場及磁場。The object of the present invention is achieved by the following technical solutions. A scanning electron microscope having an electron beam calibration function for detecting radiation electrons emitted from the sample after an electron beam generated from a light source is incident on the sample, the scanning electron microscope having an electron beam calibration function is characterized by The method includes: a detector disposed between the electron beam and the sample for detecting the radiation electron; a Wein mass filter disposed under the detector to generate a magnetic field and an electric field to control the An electron beam and a movement trajectory of the radiation electron; and a control unit that controls an electric field and a magnetic field applied to the Wynn filter.

此外,所述控制部可包括:第一計算部,用於計算將施加於所述威恩濾質器的初始電場及初始磁場,所述初始電場及所述初始磁場用於使通過所述威恩濾質器的電子束向垂直下方移動;以及第二計算部,用於計算將施加於所述威恩濾質器的校準電場及校準磁場,所述校準電場及所述校準磁場用於使所述電子束到達所述試樣上的所希望的目標點。Furthermore, the control portion may include: a first calculating portion for calculating an initial electric field and an initial magnetic field to be applied to the Wynn filter, the initial electric field and the initial magnetic field being used to pass the The electron beam of the mass filter moves vertically downward; and a second calculating portion for calculating a calibration electric field and a calibration magnetic field to be applied to the Wynn filter, the calibration electric field and the calibration magnetic field are used to make The electron beam reaches a desired target point on the sample.

此外,所述控制部可進一步包括第三計算部,用於計算將施加於所述威恩濾質器的校正電場,所述校正電場用於控制通過所述威恩濾質器的電子束的剖面形狀。Furthermore, the control portion may further include a third calculating portion for calculating a correction electric field to be applied to the Wynn filter, the correction electric field for controlling an electron beam passing through the Wynn filter Profile shape.

根據本發明提供一種掃描電子顯微鏡用威恩濾質器的控制方法,該方法利用威恩濾質器能夠易於控制電子束的移動軌跡。According to the present invention, there is provided a control method for a Wynn filter for a scanning electron microscope, which can easily control the movement trajectory of an electron beam by using a Wynn filter.

此外,利用威恩濾質器能夠易於校正電子束的形狀變形。In addition, the shape deformation of the electron beam can be easily corrected by using the Wynn filter.

此外,根據本發明提供一種具有電子束校準功能的掃描電子顯微鏡,該顯微鏡利用威恩濾質器能夠易於控制電子束的移動軌跡及形狀。Further, according to the present invention, there is provided a scanning electron microscope having an electron beam calibration function which can easily control the movement trajectory and shape of an electron beam by using a Wynn filter.

下面在進行說明之前需要說明的是,在以下多個實施例中,對於具有相同結構的結構要素,採用相同的符號在第一實施例中代表性地加以說明,並在其餘實施例中只說明不同於第一實施例的結構。It is to be noted that, in the following various embodiments, structural elements having the same structure are collectively described in the first embodiment with the same reference numerals, and only the other embodiments are described. Different from the structure of the first embodiment.

下面,參照附圖詳細說明本發明第一實施例的掃描電子顯微鏡用威恩濾質器的控制方法。Hereinafter, a control method of a Wynn filter for a scanning electron microscope according to a first embodiment of the present invention will be described in detail with reference to the accompanying drawings.

在說明本發明第一實施例的掃描電子顯微鏡用威恩濾質器的控制方法(S100)之前,先說明本實施例方法所採用的具有電子束校準功能的掃描電子顯微鏡(100)及應用該顯微鏡的檢測方法。Before describing the control method (S100) of the Wynn filter for scanning electron microscope according to the first embodiment of the present invention, a scanning electron microscope (100) having an electron beam calibration function used in the method of the present embodiment will be described and the application thereof will be described. Microscope detection method.

圖1是本發明的第一實施例所涉及的具有電子束校準功能的掃描電子顯微鏡的示意圖。1 is a schematic view of a scanning electron microscope having an electron beam calibration function according to a first embodiment of the present invention.

參照圖1,所述具有電子束校準功能的掃描電子顯微鏡(100)包括鏡筒(110)、光源(120)、匯聚透鏡(130)、光圈(140)、檢測器(150)、威恩濾質器(160)、物鏡(170)、試樣支架(180)和控制部(190)。Referring to FIG. 1, the scanning electron microscope (100) having an electron beam calibration function includes a lens barrel (110), a light source (120), a converging lens (130), an aperture (140), a detector (150), and a Wien filter. The plastometer (160), the objective lens (170), the sample holder (180), and the control unit (190).

所述鏡筒(110)是用於將後述之光源(120)、匯聚透鏡(130)、光圈(140)、檢測器(150)、威恩濾質器(160)和物鏡(170)收納於內部的外裝材,其電子束射出側的端部即用於安置試樣的試樣側端部則保持真空狀態。The lens barrel (110) is for accommodating a light source (120), a condenser lens (130), a diaphragm (140), a detector (150), a Wynn filter (160), and an objective lens (170), which will be described later, in a housing In the inner exterior material, the end portion on the electron beam exit side, that is, the sample side end portion for arranging the sample is kept in a vacuum state.

所述光源(120)是用於將透過加熱鏡筒(110)內陰極而產生的電子束向下方的安置有試樣(S)的試樣支架(180)側掃描的部件。The light source (120) is a member for scanning an electron beam generated by heating the cathode in the lens barrel (110) toward the side of the sample holder (180) on which the sample (S) is placed.

所述匯聚透鏡(130)是用於將從上述光源(120)發射的電子束匯聚為一點的部件。The converging lens (130) is a member for concentrating an electron beam emitted from the above-described light source (120) into one point.

所述光圈(140)是用於將通過匯聚透鏡(130)而匯聚的電子束轉換成具有一定波長的形態的部件。The aperture (140) is a member for converting an electron beam concentrated by the converging lens (130) into a form having a certain wavelength.

所述檢測器(150)是用於檢測在電子束的射入後從試樣(S)放射的電子即包括二次電子(Secondary Electron)在內的放射電子的部件,所述檢測器(150)設置在光源(120)和後述之威恩濾質器(160)之間。The detector (150) is a member for detecting electrons emitted from the sample (S) after the injection of the electron beam, that is, radiation electrons including secondary electrons (Second Electro Electron), the detector (150) ) is disposed between the light source (120) and a Wean filter (160) to be described later.

另一方面,放射電子在從試樣(S)向上側移動的過程中,通過威恩濾質器(160)向側方偏移並射入檢測器(150),因此檢測器(150)的前端面優選形成傾斜,使得放射電子能夠垂直射入。On the other hand, in the process of moving from the sample (S) to the upper side, the emitted electrons are laterally offset by the Wynn filter (160) and injected into the detector (150), thus the detector (150) The front end face is preferably formed to be inclined so that the emitted electrons can be incident vertically.

圖2是圖1所示具有電子束校準功能的掃描電子顯微鏡中的威恩濾質器的示意圖。2 is a schematic view of a Wynn filter in a scanning electron microscope having an electron beam calibration function shown in FIG. 1.

參照圖2,所述威恩濾質器(160)設置在檢測器(150)和試樣支架(180)之間即檢測器(150)的下側,威恩濾質器(160)是控制通過下方的電子束的移動軌跡,使得所述電子束到達所希望的目標點,或者控制通過上方的放射電子的移動軌跡,使得所述放射電子向檢測器(150)側偏移的部件。Referring to Figure 2, the Wean mass filter (160) is disposed between the detector (150) and the sample holder (180), i.e., the lower side of the detector (150), and the Wean mass filter (160) is controlled. The electron beam is caused to reach a desired target point by the movement trajectory of the lower electron beam, or the moving trajectory of the above-mentioned emitted electrons is controlled so that the emitted electrons are shifted toward the detector (150) side.

另一方面,威恩濾質器(160)具有多個柱電極(161,pole electrode)安裝於環繞電子束或放射電子的移動軌跡的環狀支承部件(162)周圍的結構,所述柱電極(161)包括:電場產生部,透過被施加的電壓產生電場以對電子束或放射電子施加靜電力;以及磁場產生部,透過被施加的電壓產生磁場以對移動的電子束或放射電子施加磁力。On the other hand, the Wean mass filter (160) has a structure in which a plurality of column electrodes (161) are mounted around an annular support member (162) surrounding a movement trajectory of electron beams or electrons, the column electrodes (161) includes: an electric field generating unit that generates an electric field by an applied voltage to apply an electrostatic force to the electron beam or the emitted electron; and a magnetic field generating unit that generates a magnetic field by the applied voltage to apply a magnetic force to the moving electron beam or the emitted electron .

另一方面,在本實施例中這些柱電極(161)的數量為八個,但柱電極(161)的數量不受上述數量的限制。On the other hand, in the present embodiment, the number of the column electrodes (161) is eight, but the number of the column electrodes (161) is not limited by the above number.

所述控制部(190)用於控制由威恩濾質器(160)產生的電場及磁場,包括:施加部(191)、第一計算部(192)、第二計算部(193)和第三計算部(194)。The control unit (190) is configured to control an electric field and a magnetic field generated by the Wynn filter (160), and includes an application unit (191), a first calculation unit (192), a second calculation unit (193), and a The third calculation unit (194).

所述施加部(191)是連接於後述之第一計算部(192)、第二計算部(193)和第三計算部(194),且用於將從各計算部(192、193、194)獲得而計算的最終電場及最終磁場資訊施加到威恩濾質器(160)的部件。The application unit (191) is connected to a first calculation unit (192), a second calculation unit (193), and a third calculation unit (194), which will be described later, and is used for each calculation unit (192, 193, 194). The final and calculated magnetic field information obtained and obtained is applied to the components of the Wynne mass filter (160).

所述第一計算部(192)是用於計算威恩濾質器(160)要求的初始電場及初始磁場資訊的部件,所述初始電場及初始磁場用於使由上側的光源(120)產生的電子束在無偏移的狀態下向垂直方向移動,並且使由下側的試樣(S)放射的放射電子的移動軌跡偏移,以使所述放射電子射入檢測器(150)。The first calculating portion (192) is a component for calculating an initial electric field and an initial magnetic field information required by the Wynn filter (160), and the initial electric field and the initial magnetic field are used to generate the light source (120) from the upper side. The electron beam moves in the vertical direction without shifting, and shifts the movement trajectory of the emitted electrons emitted from the sample (S) on the lower side so that the emitted electrons are incident on the detector (150).

所述第二計算部(193)是用於計算威恩濾質器(160)要求的校準電場及校準磁場資訊的部件,所述校準電場及校準磁場用於在不影響由試樣(S)放射出的放射電子的移動軌跡的狀態下,使得由光源(120)發射的電子束匯聚到試樣上的所希望的目標點。The second calculating unit (193) is a component for calculating the calibration electric field and the calibration magnetic field information required by the Wynn filter (160), and the calibration electric field and the calibration magnetic field are used without affecting the sample (S) In the state of the trajectory of the emitted radioactive electrons, the electron beams emitted by the light source (120) are concentrated to a desired target point on the sample.

即,由於第一計算部(192)計算為了使放射電子向檢測器(150)側偏移而威恩濾質器(160)要求的電場及磁場,因此第二計算部(193)計算為了使電子束校準至所希望的目標點而威恩濾質器(160)要求的校準電場及校準磁場資訊。That is, since the first calculating unit (192) calculates an electric field and a magnetic field required for the Wean mass filter (160) to shift the emitted electrons toward the detector (150) side, the second calculating unit (193) calculates The electron beam is calibrated to the desired target point and the calibration electric field and calibration magnetic field information required by the Wenneth filter (160).

所述第三計算部(194)是用於計算為了控制由光源(120)發射的電子束的剖面形狀而威恩濾質器(160)要求的校正電場資訊的部件。The third calculating portion (194) is a component for calculating corrected electric field information required by the Wynn filter (160) for controlling the cross-sectional shape of the electron beam emitted by the light source (120).

即,在電子束通過威恩濾質器(160)時,會出現電子束在垂直於移動方向的方向上的剖面形狀為非圓形的情況,如果電子束的剖面形狀出現變形,不能確保對試樣(S)的檢測結果的可靠性,因此由威恩濾質器(160)另行施加校正電場以校正電子束的形狀。That is, when the electron beam passes through the Wynn filter (160), the cross-sectional shape of the electron beam in the direction perpendicular to the moving direction is non-circular. If the cross-sectional shape of the electron beam is deformed, the pair cannot be ensured. The reliability of the detection result of the sample (S) is such that a correction electric field is additionally applied by the Wynn filter (160) to correct the shape of the electron beam.

因此,第三計算部(194)計算為了校正電子束的形狀而威恩濾質器(160)要求的電場資訊並提供給所述施加部(191)。Therefore, the third calculating portion (194) calculates the electric field information required by the Wynn filter (160) for correcting the shape of the electron beam and supplies it to the applying portion (191).

下面,簡要地說明上述具有電子束校準功能的掃描電子顯微鏡的工作。Next, the operation of the above scanning electron microscope having the electron beam calibration function will be briefly explained.

首先,由光源(120)掃描的電子束通過匯聚透鏡(130)及光圈(140)之後到達威恩濾質器(160)。此時,威恩濾質器(160)藉由控制部(190)產生最終電場和最終磁場。First, the electron beam scanned by the light source (120) passes through the converging lens (130) and the aperture (140) to reach the Wynne mass filter (160). At this time, the Wean mass filter (160) generates a final electric field and a final magnetic field by the control unit (190).

透過由威恩濾質器(160)產生的電場及磁場,被施加靜電力及磁力的電子束通過物鏡(170)到達試樣(S)上的目標點,在電子束射入後,由試樣(S)放射出包括二次電子的放射電子。Through the electric field and magnetic field generated by the Wynn filter (160), the electron beam to which the electrostatic force and the magnetic force are applied passes through the objective lens (170) to reach the target point on the sample (S), and after the electron beam is injected, the test is performed. The sample (S) emits radioactivity including secondary electrons.

這種放射電子向上側移動並通過威恩濾質器(160),而受到由威恩濾質器(160)施加的最終電場及最終磁場的靜電力及磁力的影響的放射電子則其移動軌跡偏向於檢測器(150)側,並最終射入檢測器(150)後被檢測。This radioactive electron moves upward and passes through the Wynne mass filter (160), while the radioactive electrons affected by the electrostatic and magnetic forces of the final electric field and the final magnetic field applied by the Wynn filter (160) are moved. It is biased toward the side of the detector (150) and is finally detected after it is injected into the detector (150).

另一方面,將在後面詳細描述在上述具有電子束校準功能的掃描電子顯微鏡的工作中控制威恩濾質器的方法的第一實施例。On the other hand, a first embodiment of a method of controlling a Wynn filter in the above-described operation of a scanning electron microscope having an electron beam calibration function will be described in detail later.

圖3是本發明的第一實施例所涉及的掃描電子顯微鏡用威恩濾質器的控制方法的流程圖。3 is a flow chart showing a method of controlling a Wynn filter for a scanning electron microscope according to a first embodiment of the present invention.

參照圖3,本發明的第一實施例的掃描電子顯微鏡用威恩濾質器的控制方法(S100)是利用威恩濾質器(160)校準電子束的方法,包括計算步驟(S110)和施加步驟(S120)。Referring to Fig. 3, a control method (S100) of a Wynn filter for a scanning electron microscope according to a first embodiment of the present invention is a method of calibrating an electron beam using a Wynn filter (160), including a calculation step (S110) and The applying step (S120).

所述計算步驟(S110)是計算並獲得將被施加到威恩濾質器(160)的最終電場及最終磁場資訊的步驟,包括初始資訊獲取步驟(S111)和校準資訊獲取步驟(S112)。The calculating step (S110) is a step of calculating and obtaining the final electric field and final magnetic field information to be applied to the Wynn filter (160), including an initial information acquisition step (S111) and a calibration information acquisition step (S112).

圖4是用於說明圖3所示掃描電子顯微鏡用威恩濾質器的控制方法中初始資訊獲取步驟的圖。Fig. 4 is a view for explaining an initial information acquisition step in the control method of the Wynn filter for the scanning electron microscope shown in Fig. 3.

參照圖4說明如下:所述初始資訊獲取步驟(S111)是透過第一計算部(192)計算並獲得威恩濾質器要求的初始電場及初始磁場資訊的步驟,所述初始電場及所述初始磁場用於使向下方通過威恩濾質器(160)的電子束在無軌跡偏移的狀態下向垂直下方移動,並且使向上方通過威恩濾質器(160)的放射電子的移動軌跡偏移從而使放射電子向檢測器(150)側移動。Referring to FIG. 4, the initial information acquisition step (S111) is a step of calculating and obtaining an initial electric field and initial magnetic field information required by the Wynn filter by the first calculation unit (192), the initial electric field and the The initial magnetic field is used to move the electron beam passing downward through the Wynn filter (160) vertically downwards in a state of no track offset, and to move the electrons of the electrons passing upward through the Wayne mass filter (160) The trajectory is shifted such that the emitted electrons move toward the detector (150) side.

換言之,假設試樣(S)中被檢測區域位於威恩濾質器(160)的垂直下方,並將這種狀態定義為初始狀態。在這種初始狀態下,不要求電子束因威恩濾質器(160)而產生軌跡變化,而僅要求放射電子的移動軌跡向檢測器(150)偏移。In other words, it is assumed that the detected area in the sample (S) is located vertically below the Wayne mass filter (160), and this state is defined as the initial state. In this initial state, the electron beam is not required to cause a trajectory change due to the Wynn filter (160), but only the trajectory of the emitted electrons is required to be shifted toward the detector (150).

因此,第一計算部(192)設置初始電場及初始磁場資訊,使得施加於電子束的靜電力(FM,11 )和施加於放射電子的靜電力(FM,12 )相同,並且使施加於電子束的磁力(FE,11 )與施加於放射電子的磁力(FE,12 )的方向相反但大小相同。Accordingly, the first calculating unit (192) sets the initial magnetic field and the initial information, so that the electrostatic force applied to the electron beam (F M, 11) and static electricity is applied to the radiation of electrons (F M, 12) the same, and the applied The magnetic force (F E,11 ) of the electron beam is opposite to the direction of the magnetic force (F E,12 ) applied to the radioactive electrons but of the same magnitude.

所述校準資訊獲取步驟(S112)是用於在電子束的射入目標點為非垂直下方的情況下,透過第二計算部(193)計算並獲得為了校準電子束而威恩濾質器(160)要求的校準電場及校準磁場資訊的步驟,包括目標點獲取步驟(S113)、測距步驟(S114)、最終水準力計算步驟(S115)及校準資訊計算步驟(S116)。The calibration information acquisition step (S112) is for calculating and obtaining a Wein filter for calibrating the electron beam through the second calculation portion (193) in the case where the injection target point of the electron beam is not vertically below ( 160) The step of calibrating the electric field and calibrating the magnetic field information, including a target point acquisition step (S113), a distance measurement step (S114), a final level force calculation step (S115), and a calibration information calculation step (S116).

圖5是用於說明圖3所示掃描電子顯微鏡用威恩濾質器的控制方法中目標點獲取步驟的圖。Fig. 5 is a view for explaining a target point acquisition step in the control method of the Wynn filter for the scanning electron microscope shown in Fig. 3.

參照圖5說明如下:所述目標點獲取步驟(S113)是從外部輸入試樣(S)上的目標點(T)或著在內部指定任意目標點(T)而獲取目標點的步驟。Referring to Fig. 5, the target point acquisition step (S113) is a step of inputting a target point (T) on the sample (S) from the outside or specifying an arbitrary target point (T) internally to acquire a target point.

所述測距步驟(S114)是感測或檢測從對電子束施加靜電力及磁力的威恩濾質器(160)的位置到試樣(S)中目標點(T)之間的直線距離(d)的步驟。The ranging step (S114) is to sense or detect a linear distance from the position of the Wynn filter (160) applying electrostatic force and magnetic force to the electron beam to the target point (T) in the sample (S) Step (d).

所述最終水準力計算步驟(S115)是考慮到在上述測距步驟(S114)中測出的從威恩濾質器(160)到目標點(T)之間的直線距離(d)和電子束的移動速度等,計算為了使電子束到達目標點(T)而需要對電子束施加的水準方向的力即最終水準力的步驟。The final level force calculating step (S115) is a linear distance (d) and an electron from the Wynn filter (160) to the target point (T) measured in the above-described ranging step (S114). The moving speed of the beam, etc., the step of calculating the force in the horizontal direction applied to the electron beam, that is, the final leveling force, in order to cause the electron beam to reach the target point (T).

圖6是用於說明圖3所示掃描電子顯微鏡用威恩濾質器的控制方法中校準資訊計算步驟的圖。Fig. 6 is a view for explaining a calculation procedure of calibration information in the control method of the Wynn filter for the scanning electron microscope shown in Fig. 3.

參照圖6說明如下:所述校準資訊計算步驟(S116)是用於計算威恩濾質器(160)要求的校準電場及校準磁場的步驟,所述校準電場及校準磁場用於在不影響放射電子的狀態下向電子束提供在上述最終水準力計算步驟(S115)中計算的最終水準力。6 is explained as follows: the calibration information calculation step (S116) is a step for calculating a calibration electric field and a calibration magnetic field required by the Wynn filter (160), and the calibration electric field and the calibration magnetic field are used for not affecting the radiation. The final level force calculated in the above-described final level force calculating step (S115) is supplied to the electron beam in an electronic state.

即,在本步驟中計算校準電場及校準磁場,使得對向下方通過威恩濾質器(160)的電子束施加的靜電力(FM,A1 )及磁力(FE,A1 )的組合與所述最終水準力一致,並且使對向上方通過威恩濾質器(160)的放射電子施加的靜電力(FM,A2 )和磁力(FE,A2 )相抵消而不影響放射電子。That is, in this step, the calibration electric field and the calibration magnetic field are calculated such that the combination of the electrostatic force (F M, A1 ) and the magnetic force (F E, A1 ) applied to the electron beam passing through the Wynn filter (160) downward is The final level force is uniform and counteracts the electrostatic force (F M, A2 ) and the magnetic force (F E, A2 ) applied to the radiation electrons passing upward through the Wynn filter (160) without affecting the radioactivity.

圖7是用於說明圖3所示掃描電子顯微鏡用威恩濾質器的控制方法中施加步驟的圖。Fig. 7 is a view for explaining an application step in a control method of a Wynn filter for a scanning electron microscope shown in Fig. 3.

參照圖7說明如下:在所述施加步驟(S120)中,將在上述計算步驟(S110)中獲得的初始電場及初始磁場、校準電場及校準磁場組合而計算最終電場及最終磁場,並使用這些資訊控制威恩濾質器(160)產生最終電場及最終磁場,從而使通過威恩濾質器(160)的電子束能夠到達試樣(S)上的所希望的目標點(T),並且使由試樣(S)放射的放射電子能夠射入檢測器(150)。Referring to Fig. 7, the following description is given: in the applying step (S120), the initial electric field and the initial magnetic field, the calibration electric field, and the calibration magnetic field obtained in the above calculating step (S110) are combined to calculate a final electric field and a final magnetic field, and these are used. The information control Wayne mass filter (160) produces a final electric field and a final magnetic field such that the electron beam passing through the Wynn filter (160) can reach the desired target point (T) on the sample (S), and The emitted electrons emitted from the sample (S) can be incident on the detector (150).

換言之,在本步驟中施加部(191)綜合通過第一計算部(192)計算並獲得的初始電場及初始磁場資訊和通過第二計算部(193)獲得的校正電場及校正磁場資訊,以計算最終電場及最終磁場,並使威恩濾質器產生最終電場及最終磁場。In other words, in this step, the applying unit (191) comprehensively calculates the initial electric field and the initial magnetic field information calculated and obtained by the first calculating unit (192) and the corrected electric field and the corrected magnetic field information obtained by the second calculating unit (193) to calculate The final electric field and the final magnetic field cause the final and electric fields to be generated by the Wynne mass filter.

下面,說明本發明第二實施例的 掃描電子顯微鏡用威恩濾質器的控制方法(S200)。Next, a control method (S200) for a Wynn filter for a scanning electron microscope according to a second embodiment of the present invention will be described.

圖8是本發明的第二實施例所涉及的掃描電子顯微鏡用威恩濾質器的控制方法的流程圖。Fig. 8 is a flow chart showing a method of controlling a Wynn filter for a scanning electron microscope according to a second embodiment of the present invention.

參照圖8,本發明第二實施例的掃描電子顯微鏡用威恩濾質器的控制方法(S200)是利用威恩濾質器(160)校準電子束的方法,包括計算步驟(S110)和施加步驟(S120)。Referring to Fig. 8, a control method (S200) for a Wynn filter for a scanning electron microscope according to a second embodiment of the present invention is a method of calibrating an electron beam using a Wynn filter (160), including a calculation step (S110) and application. Step (S120).

所述計算步驟(S110)是用於計算並獲得將施加於威恩濾質器(160)的最終電場及最終磁場資訊的步驟,包括初始資訊獲取步驟(S111)、校準資訊獲取步驟(S112)和校正資訊獲取步驟(S117),其中初始資訊獲取步驟(S111)及校準資訊獲取步驟(S112)與第一實施例中的說明相同,因此省略重複說明。The calculating step (S110) is a step for calculating and obtaining the final electric field and final magnetic field information to be applied to the Wynn filter (160), including an initial information acquisition step (S111), and a calibration information acquisition step (S112) And a correction information acquisition step (S117), wherein the initial information acquisition step (S111) and the calibration information acquisition step (S112) are the same as those in the first embodiment, and thus the repeated explanation is omitted.

圖9是用於說明圖8所示的掃描電子顯微鏡用威恩濾質器的控制方法中校正資訊獲取步驟的圖。Fig. 9 is a view for explaining a correction information acquisition step in the control method of the Wynn filter for the scanning electron microscope shown in Fig. 8.

參照圖9說明如下:所述校正資訊獲取步驟(S217)是透過第三計算部(194)計算並獲得威恩濾質器(160)要求的校正電場的步驟,所述校正電場用於使通過威恩濾質器(160)的電子束的非正常形狀變形從而將其校正為正常的形狀。Referring to Fig. 9, the correction information acquisition step (S217) is a step of calculating and obtaining a correction electric field required by the Wynn filter (160) through the third calculation portion (194) for making the passage through The abnormal shape of the electron beam of the Wean filter (160) is deformed to correct it to a normal shape.

即,當使用例如與電子束的移動方向垂直的剖面的形狀為橢圓形而非圓形的非正常電子束檢測試樣(S)時,會出現檢測可靠性下降的問題,因此第三計算部(194)計算為了校正電子束形狀而威恩濾質器(160)要求的校正電場資訊。換言之,第三計算部(194)計算為了透過施加於電子束的靜電力(FC )校正電子束的形狀而威恩濾質器(160)要求的校正電場。That is, when an abnormal electron beam detecting sample (S) having a shape in which a cross section perpendicular to the moving direction of the electron beam is elliptical rather than circular is used, a problem that the detection reliability is lowered may occur, and thus the third calculating portion (194) Calculate the corrected electric field information required by the Wayne mass filter (160) in order to correct the shape of the electron beam. In other words, the third calculating unit (194) calculates a corrected electric field required by the Wean filter (160) in order to correct the shape of the electron beam by the electrostatic force (F C ) applied to the electron beam.

因此,所計算出的校正電場資訊被傳遞到施加部(191),且在所述施加步驟(S120)中控制威恩濾質器(160)產生考慮到這種校正電場資訊的最終電場。Therefore, the calculated corrected electric field information is transmitted to the applying portion (191), and in the applying step (S120), the Wynn filter (160) is controlled to generate a final electric field in consideration of such corrected electric field information.

本發明並不限於上述實施例及變形例,而在申請專利範圍所記載的範圍內可實現為多種形態的實施例。在不脫離本發明之申請專利範圍所要求保護的本發明宗旨的範圍內,在本發明所屬領域中具有通常知識者均能變形的範圍,毋庸置疑也屬於本發明的範圍之內。The present invention is not limited to the above-described embodiments and modifications, and can be embodied in various forms within the scope of the claims. It is to be understood that within the scope of the invention, the scope of the invention is intended to be within the scope of the invention.

100...掃描電子顯微鏡100. . . scanning electron microscope

110...鏡筒110. . . Lens barrel

120...光源120. . . light source

130...匯聚透鏡130. . . Converging lens

140...光圈140. . . aperture

150...檢測器150. . . Detector

160...威恩濾質器160. . . Wayne mass filter

161...柱電極161. . . Column electrode

162...環狀支承部件162. . . Annular support member

170...物鏡170. . . Objective lens

180...試樣支架180. . . Sample holder

190...控制部190. . . Control department

191...施加部191. . . Application department

192...第一計算部192. . . First calculation department

193...第二計算部193. . . Second calculation department

194...第三計算部194. . . Third calculation department

FM,11 ...初始施加於電子束的靜電力F M,11 . . . The electrostatic force initially applied to the electron beam

FM,12 ...初始施加於放射電子的靜電力F M,12 . . . Electrostatic force initially applied to radioactive electrons

FE,11 ...初始施加於電子束的磁力F E,11 . . . Magnetic force initially applied to the electron beam

FE,12 ...初始施加於放射電子的磁力F E,12 . . . Magnetic force initially applied to radioactive electrons

FM,A1 ...對向下方通過威恩濾質器的電子束施加的靜電力F M, A1 . . . Electrostatic force applied to the electron beam passing through the Wynn filter

FM,A2 ...對向上方通過威恩濾質器的放射電子施加的靜電力F M, A2 . . . Electrostatic force applied to the radiation electrons passing through the Wynn filter

FE,A1 ...對向下方通過威恩濾質器的電子束施加的磁力F E, A1 . . . Magnetic force applied to the electron beam passing through the Wynn filter

FE,A2 ...對向上方通過威恩濾質器的放射電子施加的磁力F E, A2 . . . Magnetic force applied to the radiating electrons passing through the Wynn filter

FC ...施加於電子束的靜電力F C . . . Electrostatic force applied to an electron beam

S...試樣S. . . Sample

T...目標點T. . . Target

d...直線距離d. . . Straight line distance

圖1是本發明的第一實施例所涉及的具有電子束校準功能的掃描電子顯微鏡的示意圖。1 is a schematic view of a scanning electron microscope having an electron beam calibration function according to a first embodiment of the present invention.

圖2是圖1所示具有電子束校準功能的掃描電子顯微鏡中的威恩濾質器的示意圖。2 is a schematic view of a Wynn filter in a scanning electron microscope having an electron beam calibration function shown in FIG. 1.

圖3是本發明的第一實施例所涉及的掃描電子顯微鏡用威恩濾質器的控制方法的流程圖。3 is a flow chart showing a method of controlling a Wynn filter for a scanning electron microscope according to a first embodiment of the present invention.

圖4是用於說明圖3所示掃描電子顯微鏡用威恩濾質器的控制方法中初始資訊獲取步驟的圖。Fig. 4 is a view for explaining an initial information acquisition step in the control method of the Wynn filter for the scanning electron microscope shown in Fig. 3.

圖5是用於說明圖3所示掃描電子顯微鏡用威恩濾質器的控制方法中目標點獲取步驟的圖。Fig. 5 is a view for explaining a target point acquisition step in the control method of the Wynn filter for the scanning electron microscope shown in Fig. 3.

圖6是用於說明圖3所示掃描電子顯微鏡用威恩濾質器的控制方法中校準資訊計算步驟的圖。Fig. 6 is a view for explaining a calculation procedure of calibration information in the control method of the Wynn filter for the scanning electron microscope shown in Fig. 3.

圖7是用於說明圖3所示掃描電子顯微鏡用威恩濾質器的控制方法中施加步驟的圖。Fig. 7 is a view for explaining an application step in a control method of a Wynn filter for a scanning electron microscope shown in Fig. 3.

圖8是本發明的第二實施例所涉及的掃描電子顯微鏡用威恩濾質器的控制方法的流程圖。Fig. 8 is a flow chart showing a method of controlling a Wynn filter for a scanning electron microscope according to a second embodiment of the present invention.

圖9是用於說明圖8所示掃描電子顯微鏡用威恩濾質器的控制方法中校正資訊獲取步驟的圖。Fig. 9 is a view for explaining a correction information acquisition step in the control method of the Wynn filter for the scanning electron microscope shown in Fig. 8.

100...掃描電子顯微鏡100. . . scanning electron microscope

110...鏡筒110. . . Lens barrel

120...光源120. . . light source

130...匯聚透鏡130. . . Converging lens

140...光圈140. . . aperture

150...檢測器150. . . Detector

160...威恩濾質器160. . . Wayne mass filter

170...物鏡170. . . Objective lens

180...試樣支架180. . . Sample holder

190...控制部190. . . Control department

191...施加部191. . . Application department

192...第一計算部192. . . First calculation department

193...第二計算部193. . . Second calculation department

194...第三計算部194. . . Third calculation department

S...試樣S. . . Sample

Claims (7)

一種掃描電子顯微鏡用威恩濾質器的控制方法,應用於這樣一種掃描電子顯微鏡:使得從光源產生的電子束通過威恩濾質器而射入試樣後所放射的放射電子通過所述威恩濾質器後射入檢測器,以檢測所述放射電子,所述控制方法的特徵在於,包括:計算步驟,用於計算需要對所述威恩濾質器施加的最終電場及最終磁場,所述最終電場及所述最終磁場用於使通過所述威恩濾質器的電子束到達所述試樣的目標點,並且使從所述試樣放射並通過所述威恩濾質器的放射電子到達所述檢測器;以及施加步驟,對所述威恩濾質器施加所述最終電場及所述最終磁場;其中,所述計算步驟包括:初始資訊獲取步驟,用於獲取需要對所述威恩濾質器施加的初始電場及初始磁場,所述初始電場及所述初始磁場用於使通過所述威恩濾質器的電子束向垂直下方移動,並且使從所述試樣放射並通過所述威恩濾質器的放射電子到達所述檢測器;以及校準資訊獲取步驟,用於獲取需要對所述威恩濾質器施加的校準電場及校準磁場,所述校準電場及所述校準磁場用於使所述電子束到達所述試樣上的目標點。 A control method for a scanning electron microscope using a Wynne mass filter is applied to a scanning electron microscope such that an electron beam generated from a light source passes through a Wynn filter and is emitted by a radioactive electron that passes through the sample. After the mass filter is injected into the detector to detect the emitted electrons, the control method is characterized by comprising: a calculating step for calculating a final electric field and a final magnetic field to be applied to the Wynn filter. The final electric field and the final magnetic field are used to cause an electron beam passing through the Wynn filter to reach a target point of the sample and to radiate from the sample and pass through the Wynn filter Radiating electrons reaching the detector; and applying step of applying the final electric field and the final magnetic field to the Wynn filter; wherein the calculating step comprises: an initial information acquisition step for obtaining a required An initial electric field applied by the Wynn filter and an initial magnetic field, the initial electric field and the initial magnetic field being used to move the electron beam passing through the Wynn filter vertically downward and The sample is radiated and passed through the electrons of the Wynn filter to the detector; and a calibration information acquisition step is performed for obtaining a calibration electric field and a calibration magnetic field to be applied to the Wynn filter. The calibration electric field and the calibration magnetic field are used to cause the electron beam to reach a target point on the sample. 如申請專利範圍第1項所述之掃描電子顯微鏡用威恩濾質器的控制方法,其中施加步驟之前進一步包括校正資訊獲取步驟,用於獲取為了校正所述電子束的剖面形狀而所述威恩濾質器所要求的校正電場,在所述施加步驟中對所述威恩濾質器施加的最終電場包括所述校正電場資訊。 The method for controlling a Wynn filter for a scanning electron microscope according to claim 1, wherein the applying step further comprises a correction information acquiring step for acquiring the cross-sectional shape for correcting the electron beam. The corrected electric field required by the mass filter, the final electric field applied to the Wynn filter in the applying step includes the corrected electric field information. 如申請專利範圍第1項所述之掃描電子顯微鏡用威恩濾質器的控制方法,其中校準資訊獲取步驟包括:目標點獲取步驟,獲取所述試樣上的所述目標點的位置;測距步驟,檢測從所述威恩濾質器到所述目標點的直線距離;以及最終水準力計算步驟,計算為了使所述電子束到達所述目標點位置而需要由所述威恩濾質器向所述電子束提供的最終水準力。 The method for controlling a Wynn filter for a scanning electron microscope according to the first aspect of the invention, wherein the calibration information acquisition step comprises: a target point acquisition step of acquiring a position of the target point on the sample; a step of detecting a linear distance from the Wynn filter to the target point; and a final level force calculation step calculating the need for the Wynn filter to bring the electron beam to the target point position The final level of force provided by the device to the electron beam. 如申請專利範圍第3項所述之掃描電子顯微鏡用威恩濾質器的控制方法,其中校準資訊獲取步驟在所述最終水準力計算步驟之後進一步包括校準資訊計算步驟,計算所述威恩濾質器所要求的校準電場及校準磁場,所述校準電場及所述校準磁場用於對所述電子束施加所述最終水準力,並且使通過所述威恩濾質器的所述放射電子到達所述檢測器。 The method for controlling a Wynn filter for a scanning electron microscope according to claim 3, wherein the calibration information acquisition step further comprises a calibration information calculation step after the final level force calculation step, and calculating the Wean filter a calibration electric field and a calibration magnetic field required by the plastometer, the calibration electric field and the calibration magnetic field being used to apply the final level force to the electron beam, and to cause the radiation electrons to pass through the Wynn filter The detector. 如申請專利範圍第4項所述之掃描電子顯微鏡用威恩濾質器的控制方法,其中藉由所述校準電場施加於所 述電子束的靜電力和藉由所述校準磁場施加於所述電子束的磁力的方向相同且大小相同。 A method for controlling a Wynn filter for a scanning electron microscope according to claim 4, wherein the calibration electric field is applied to the The electrostatic force of the electron beam and the direction of the magnetic force applied to the electron beam by the calibration magnetic field are the same and the same size. 一種具有電子束校準功能的掃描電子顯微鏡,用於檢測從光源產生的電子束射入試樣後從所述試樣放射的放射電子,所述具有電子束校準功能的掃描電子顯微鏡的特徵在於,包括:檢測器,配置在所述電子束和所述試樣之間,用於檢測所述放射電子;威恩濾質器,配置在所述檢測器的下方,產生磁場及電場以控制所述電子束及所述放射電子的移動軌跡;以及控制部,控制施加於所述威恩濾質器的電場及磁場;其中,所述控制部包括:第一計算部,用於計算將施加於所述威恩濾質器的初始電場及初始磁場,所述初始電場及所述初始磁場用於使通過所述威恩濾質器的電子束向垂直下方移動;以及第二計算部,用於計算將施加於所述威恩濾質器的校準電場及校準磁場,所述校準電場及所述校準磁場用於使所述電子束到達所述試樣上的所希望的目標點。 A scanning electron microscope having an electron beam calibration function for detecting radiation electrons emitted from the sample after an electron beam generated from a light source is incident on the sample, the scanning electron microscope having an electron beam calibration function, characterized in that Included: a detector disposed between the electron beam and the sample for detecting the radioactivity; a Wein mass filter disposed under the detector to generate a magnetic field and an electric field to control the An electron beam and a movement trajectory of the electron emission; and a control unit that controls an electric field and a magnetic field applied to the Wynn filter; wherein the control unit includes: a first calculation unit configured to calculate a An initial electric field and an initial magnetic field of the Wynn filter, the initial electric field and the initial magnetic field are used to move an electron beam passing through the Wynn filter vertically downward; and a second calculating unit is used for calculation A calibration electric field to be applied to the Wynn filter and a calibration magnetic field for the electron beam to reach a desired target point on the sample. 如申請專利範圍第6項所述之具有電子束校準功能的掃描電子顯微鏡,其中所述控制部進一步包括第三計 算部,用於計算將施加於所述威恩濾質器的校正電場,所述校正電場用於控制通過所述威恩濾質器的電子束的剖面形狀。A scanning electron microscope having an electron beam calibration function according to claim 6, wherein the control portion further includes a third meter An arithmetic unit for calculating a corrected electric field to be applied to the Wynn filter, the corrected electric field for controlling a cross-sectional shape of an electron beam passing through the Wynn filter.
TW100139223A 2011-10-27 2011-10-27 Method for controlling wien filter for scanning electron microscope and scanning electron microscope having electron beam aligning function TWI447774B (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0592899B1 (en) * 1992-10-15 1998-04-08 Hitachi, Ltd. A scanning electron microscope
US6586736B1 (en) * 1999-09-10 2003-07-01 Kla-Tencor, Corporation Scanning electron beam microscope having an electrode for controlling charge build up during scanning of a sample
TW201113931A (en) * 2009-04-30 2011-04-16 Synopsys Inc Modeling critical-dimension (CD) scanning-electron-microscopy (CD-SEM) CD extraction

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0592899B1 (en) * 1992-10-15 1998-04-08 Hitachi, Ltd. A scanning electron microscope
US6586736B1 (en) * 1999-09-10 2003-07-01 Kla-Tencor, Corporation Scanning electron beam microscope having an electrode for controlling charge build up during scanning of a sample
TW201113931A (en) * 2009-04-30 2011-04-16 Synopsys Inc Modeling critical-dimension (CD) scanning-electron-microscopy (CD-SEM) CD extraction

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