TWI445491B - Sandwich structures and methods of cooling, shielding emi noises and carrying currents for mini-modules - Google Patents
Sandwich structures and methods of cooling, shielding emi noises and carrying currents for mini-modules Download PDFInfo
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Description
本發明的實施例係有關一種微型元件,更具體地說,有關一種在微型元件中用於熱冷卻和EMI屏蔽的夾層結構。Embodiments of the present invention relate to a micro-component, and more particularly to a sandwich structure for thermal cooling and EMI shielding in a micro-element.
當今,微型元件由於具有小尺寸、低功耗等優點而發展迅速。目前,微型元件的封裝形式主要採用打線接合技術。然而,由於在打線接合技術中,接合引線較長,引線阻抗較大,所以使得微型元件的功率損耗增大,效率降低。這限制了承載大電流的能力。而且,由於接合引線較細,將會產生寄生電感,使得微型元件中的開關在切換時將產生振盪迴路,而振盪迴路的產生將使得電路中產生額外的損耗以及產生電磁干擾(EMI)雜訊。另外,打線接合技術只能將微型元件產生的熱量從底面散發出去,因此,其散熱能力較差。隨著現今負載電流越來越大,對元件散熱能力的要求越來越高,打線接合技術已不再是微型元件的最佳封裝形式。Today, micro-components are rapidly developing due to their small size and low power consumption. At present, the package form of micro components mainly uses wire bonding technology. However, in the wire bonding technique, since the bonding wires are long and the lead resistance is large, the power loss of the micro components is increased and the efficiency is lowered. This limits the ability to carry large currents. Moreover, since the bonding leads are thin, parasitic inductance will be generated, so that the switches in the micro components will generate an oscillating circuit when switching, and the generation of the oscillating circuit will cause additional loss in the circuit and generate electromagnetic interference (EMI) noise. . In addition, the wire bonding technique can only dissipate the heat generated by the micro components from the bottom surface, and therefore, the heat dissipation capability is poor. With today's increasing load currents, the requirements for component heat dissipation are becoming higher and higher, and wire bonding technology is no longer the best package for micro components.
因此,需要一種新穎的封裝結構,以減小微型元件中的功率損耗及電磁干擾,並能提高其散熱能力。Therefore, there is a need for a novel package structure to reduce power loss and electromagnetic interference in micro-components and to improve their heat dissipation capability.
針對現有技術中的一個或多個問題,本發明的一個目的在於提供一種用於微型元件的夾層結構和方法。In view of one or more problems in the prior art, it is an object of the present invention to provide a sandwich structure and method for a microcomponent.
在本發明的一個樣態中,本發明的實施例提供一種用於微型元件的夾層結構,所述夾層結構包括:頂層結構,所述頂層結構用於熱冷卻、電磁干擾屏蔽以及載流,其中,所述頂層結構具有頂面和底面;底層結構,所述底層結構用於熱冷卻、載流以及電路控制,其中,所述底層結構具有頂面和底面;內部元件,其中,所述內部元件包括第一組元件,第一組元件包括一個或多個元件,且其中,每個元件的第一面均被安裝在所述底層結構的頂面上;第一組連接結構,其中,第一組連接結構包括一個或多個連接結構,所述第一組連接結構中的每一個連接結構均用以將第一組元件中的每個元件連接至所述頂層結構的底面;第二組連接結構,其中,第二組連接結構包括一個或多個連接結構,所述第二組連接結構係連接於所述頂層結構的底面和所述底層結構的頂面之間,用以為所述內部元件提供一條或多條電流通道。In one aspect of the invention, embodiments of the present invention provide a sandwich structure for a microcomponent, the sandwich structure comprising: a top layer structure for thermal cooling, electromagnetic interference shielding, and current carrying, wherein The top layer structure has a top surface and a bottom surface; an underlayer structure for thermal cooling, current carrying, and circuit control, wherein the underlying structure has a top surface and a bottom surface; internal components, wherein the internal components Including a first set of elements, the first set of elements including one or more elements, and wherein a first side of each of the elements is mounted on a top surface of the underlying structure; a first set of connected structures, wherein The set of connection structures includes one or more connection structures, each of the first set of connection structures for connecting each of the first set of elements to the bottom surface of the top layer structure; the second set of connections a structure, wherein the second set of connection structures comprises one or more connection structures, the second set of connection structures being attached to a bottom surface of the top structure and a top of the bottom structure Between, provided with one or more current path for said internal element.
在本發明的另一個樣態中,本發明的實施例提供一種用以冷卻微型元件、屏蔽微型元件電磁干擾以及載流的的方法,包括:在底層結構的頂面上安裝第一組元件,其中,第一組元件包括一個或多個元件,所述底層結構用於熱冷卻、載流以及電路控制;將第一組連接結構中的每一個的第一面連接至頂層結構,其中,第一組連接結構包括一個或多個連接結構,所述頂層結構用於熱冷卻、電磁干擾屏蔽以及載流;將第二組連接結構中的每一個的第一面連接至所述頂層結構的底面,其中,第二組連接結構包括一個或多個連接結構,所述第二組連接結構用以為微型元件提供一條或多條電流通道;將第一組連接結構中的每一個的第二面分別連接至第一組元件中每一個元件;以及將第二組連接結構中的每一個的第二面連接至所述底層結構的頂面。In another aspect of the present invention, an embodiment of the present invention provides a method for cooling a micro-component, shielding electromagnetic interference of a micro-element, and carrying current, comprising: mounting a first set of components on a top surface of the underlying structure, Wherein the first set of components includes one or more components for thermal cooling, current carrying, and circuit control; connecting the first side of each of the first set of connection structures to the top layer structure, wherein A set of connection structures includes one or more connection structures for thermal cooling, electromagnetic interference shielding, and current carrying; connecting a first side of each of the second set of connection structures to a bottom surface of the top layer structure The second set of connection structures includes one or more connection structures for providing one or more current channels for the micro-components; and the second side of each of the first set of connection structures Connected to each of the first set of elements; and connect a second side of each of the second set of connected structures to a top surface of the underlying structure.
利用本發明實施例,可以實現微型元件的雙面冷卻,提高微型元件的散熱能力,並且減小微型元件的功率耗散和提高微型元件的抗電磁干擾能力。With the embodiment of the invention, double-sided cooling of the micro component can be realized, the heat dissipation capability of the micro component can be improved, power dissipation of the micro component can be reduced, and the electromagnetic interference resistance of the micro component can be improved.
下面詳細說明本發明實施例的用於微型元件的夾層結構。在接下來的說明中,一些具體的細節,都用以對本發明的實施例提供更好的理解。本技術領域的技術人員可以理解,即使在缺少一些細節或者其他方法、元件、材料等結合的情況下,本發明的實施例也可以被實現。The sandwich structure for a micro component of the embodiment of the present invention will be described in detail below. In the following description, some specific details are provided to provide a better understanding of the embodiments of the invention. Those skilled in the art will appreciate that embodiments of the present invention can be implemented even in the absence of some detail or a combination of other methods, elements, materials, and the like.
圖1示出一典型的直流/直流(DC/DC)降壓轉換器電路10。如圖1所示,電路10包含控制器,其耦接至上管FET1以及下管FET2的閘極。上管FET1的汲極係耦接至輸入端VIN,其源極係耦接至下管FET2的汲極。下管FET2的源極係耦接至地。電感L的一端係耦接至上管FET1和下管FET2的共用端,其另一端係耦接至輸出端VOUT。在本實施例中,控制器和上管FET1係集成於同一晶片101中。FIG. 1 shows a typical DC/DC (DC/DC) buck converter circuit 10. As shown in FIG. 1, the circuit 10 includes a controller coupled to the gates of the upper tube FET1 and the lower tube FET2. The drain of the upper FET 1 is coupled to the input terminal VIN, and the source thereof is coupled to the drain of the lower FET 2 . The source of the lower FET 2 is coupled to ground. One end of the inductor L is coupled to the common terminal of the upper tube FET1 and the lower tube FET2, and the other end is coupled to the output terminal VOUT. In the present embodiment, the controller and the upper tube FET1 are integrated in the same wafer 101.
圖2A和圖2B示出根據本發明之一個實施例的實現圖1所示DC/DC降壓轉換器電路10的新穎夾層結構。如圖2A和2B所示,晶片101透過倒裝焊接技術而被安裝在位於底面的基板上,以使得晶片101的正面為地,其反面透過例如焊錫膏等導電膠而被附著在基板上。下管FET2和電感L亦透過導電膠而被安裝在基板上。所述安裝製程可以透過傳統的習知回流製程來予以實現。2A and 2B illustrate a novel sandwich structure that implements the DC/DC buck converter circuit 10 of FIG. 1 in accordance with one embodiment of the present invention. As shown in FIGS. 2A and 2B, the wafer 101 is mounted on a substrate on the bottom surface by flip chip bonding so that the front surface of the wafer 101 is ground, and the reverse surface thereof is adhered to the substrate by a conductive paste such as solder paste. The lower tube FET2 and the inductor L are also mounted on the substrate through the conductive paste. The mounting process can be implemented by conventional conventional reflow processes.
金屬通孔A和C分別用以將晶片101和下管FET2連接至位於頂面的金屬引線框,所述金屬引線框透過銀環氧樹脂或者焊錫膏而與微型元件的各個裝置連接,且所述金屬引線框覆蓋住微型元件的所有裝置。由於存在金屬通孔A和C,晶片101和下管FET2產生的熱量不僅能夠透過傳統方法從基板散發出去,還能夠透過金屬通孔A和C從金屬引線框散發出去,亦即,利用金屬通孔實現了微型元件的雙面冷卻。而金屬引線框用作為功率地屏蔽層,能夠阻擋EMI雜訊。圖2A和圖2B中的基板可以是具有不同類型芯材(core material)的印刷電路板(PCB),或者是金屬薄膜。金屬引線框和基板均可以用於載流或作為控制信號走線。金屬通孔B係直接連接於金屬引線框和基板之間,以便將金屬引線框的的功率地和基板地連接起來。金屬通孔B代替了傳統打線接合連接,以提供從下管FET2至基板的電流通道以供載流用。Metal vias A and C are respectively used to connect the wafer 101 and the lower tube FET 2 to a metal lead frame located on the top surface, and the metal lead frame is connected to each device of the micro component through a silver epoxy resin or a solder paste. The metal lead frame covers all of the components of the microcomponent. Due to the presence of the metal vias A and C, the heat generated by the wafer 101 and the lower FET 2 can be dissipated from the substrate by conventional methods, and can also be emitted from the metal lead frame through the metal vias A and C, that is, using metal vias. The holes enable double-sided cooling of the micro-components. The metal lead frame is used as a power ground shield to block EMI noise. The substrate in FIGS. 2A and 2B may be a printed circuit board (PCB) having a different type of core material, or a metal film. Both the metal leadframe and the substrate can be used for current carrying or as a control signal trace. The metal via B is directly connected between the metal lead frame and the substrate to connect the power ground of the metal lead frame to the substrate ground. The metal via B replaces the conventional wire bond connection to provide a current path from the lower FET 2 to the substrate for current carrying.
在另一實施例中,金屬通孔B可以用以在金屬引線框與基板之間傳輸信號或者載流。In another embodiment, the metal vias B can be used to transfer signals or carry current between the metal leadframe and the substrate.
在一個實施例中,金屬引線框可以是平板或密封罩,並完全覆蓋微型元件。In one embodiment, the metal leadframe can be a flat or sealed enclosure and completely cover the microelements.
在一個實施例中,在金屬引線框上可以具有多個開孔。In one embodiment, there may be multiple openings in the metal leadframe.
在一個實施例中,當金屬引線框為平板時,在微型元件的空隙中填充絕緣材料。具體而言,可以透過金屬引線框上的開孔而向微型元件注入模具複合材料,這樣形成的封裝較堅固。在微型元件中注入模具複合材料還能夠產生電絕緣的作用。模具複合材料可以為矽氧樹脂(silicone)。另外,所述開孔還能減小渦流,因而更有效地提高電磁屏蔽效果。In one embodiment, when the metal lead frame is a flat plate, the insulating material is filled in the voids of the micro-component. Specifically, the mold composite can be injected into the micro-component through the opening in the metal lead frame, and the package thus formed is relatively strong. Injection of the mold composite into the micro-components also produces electrical insulation. The mold composite can be a silicone. In addition, the opening can also reduce eddy currents, thereby more effectively improving the electromagnetic shielding effect.
電感L透過銀環氧樹脂而與金屬引線框連接,可以幫助微型元件散熱,進而提高效率。The inductor L is connected to the metal lead frame through the silver epoxy resin, which can help the heat dissipation of the micro component and improve the efficiency.
雖然示出了3個金屬通孔A、B和C作為連接結構的示例,但是本發明中連接結構的數目不限於該具體示例,在實際中可以根據應用需求而採用任何適合數目的連接結構。Although three metal through holes A, B, and C are shown as examples of the connection structure, the number of connection structures in the present invention is not limited to this specific example, and any suitable number of connection structures may be employed in practice depending on the application requirements.
圖3示出依據本發明之另一個實施例的改進的夾層結構。如圖3所示,與圖2A和2B所示的結構相比,微型元件的內部元件D1和D2分別透過第一組金屬通孔D和第二組金屬通孔E而被連接至金屬引線框。採用多個小通孔的連接方式能夠減小內部元件的熱應力,且多個小通孔一起所承受的熱應力亦小於一個金屬通孔所承受的熱應力,並能夠避免內部元件D1和D2被壓碎。Figure 3 illustrates an improved sandwich structure in accordance with another embodiment of the present invention. As shown in FIG. 3, the internal components D1 and D2 of the micro-component are connected to the metal lead frame through the first set of metal vias D and the second set of metal vias E, respectively, compared to the structures shown in FIGS. 2A and 2B. . The use of a plurality of small through holes can reduce the thermal stress of the internal components, and the thermal stresses of the plurality of small through holes together are less than the thermal stress of a metal through hole, and the internal components D1 and D2 can be avoided. Being crushed.
雖然示出了2個內部元件D1和D2作為內部元件的示例,但是本發明中內部元件的數目不限於該具體示例,在實際中可以根據應用需求而採用任何適合數目的內部元件。Although two internal elements D1 and D2 are shown as examples of internal elements, the number of internal elements in the present invention is not limited to this specific example, and any suitable number of internal elements may be employed in practice depending on the application requirements.
圖4示出根據本發明之另一個實施例的一種改進的夾層結構。如圖4所示,和圖2A和圖2B所示的結構相比,金屬引線框被製造成具有底面開口的密封罩結構。所述密封罩透過銀環氧樹脂或者焊錫膏而被連接至基板,並完全罩住整個微型元件。該結構不再需要模具複合材料,因而節省了成本。另外,密封罩防止了微型元件的側邊磁洩露,因而提高了EMI屏蔽效果。而且,圖4所示的結構透過將金屬引線框和基板直接連接,還提供了額外的熱路徑以供微型元件散熱用,因而提高了微型元件的熱性能。Figure 4 illustrates an improved sandwich structure in accordance with another embodiment of the present invention. As shown in FIG. 4, the metal lead frame is fabricated to have a sealed cover structure having an open bottom surface as compared with the structure shown in FIGS. 2A and 2B. The sealing cover is attached to the substrate through a silver epoxy or solder paste and completely covers the entire micro-component. The structure eliminates the need for mold composites, thus saving costs. In addition, the sealing cover prevents magnetic leakage at the side of the micro-component, thereby improving the EMI shielding effect. Moreover, the structure shown in FIG. 4 provides an additional thermal path for heat dissipation of the micro-components by directly connecting the metal lead frame to the substrate, thereby improving the thermal performance of the micro-elements.
上述本發明的說明書和實施方式僅僅以示例性的方式而對本發明實施例的用於微型元件的夾層結構及其方法進行了說明,並不是用來限定本發明的範圍。對於所揭示的實施例進行變化和修改都是可能的,其他可行的選擇性實施例和對實施例中元件的等同變化可以被本技術領域的普通技術人員所瞭解。本發明所揭示的實施例的其他變化和修改並不超出本發明的精神和保護範圍。The above description and embodiments of the present invention are merely illustrative of the sandwich structure for the micro-components of the embodiments of the present invention and the method thereof, and are not intended to limit the scope of the present invention. Variations and modifications of the disclosed embodiments are possible, and other possible alternative embodiments and equivalent variations to the elements of the embodiments will be apparent to those of ordinary skill in the art. Other variations and modifications of the disclosed embodiments of the invention do not depart from the spirit and scope of the invention.
10...直流/直流(DC/DC)降壓轉換器電路10. . . DC/DC (DC/DC) Buck Converter Circuit
101...晶片101. . . Wafer
A,B,C...金屬通孔A, B, C. . . Metal through hole
D1,D2...內部元件D1, D2. . . Internal component
D...第一組金屬通孔D. . . First set of metal through holes
E...第二組金屬通孔E. . . Second set of metal through holes
圖1示出一典型的直流/直流(DC/DC)降壓轉換器電路10。FIG. 1 shows a typical DC/DC (DC/DC) buck converter circuit 10.
圖2A示出根據本發明之一個實施例的實現圖1所示DC/DC降壓轉換器電路10的微型元件結構的側視圖。2A shows a side view of a micro-element structure implementing the DC/DC buck converter circuit 10 of FIG. 1 in accordance with one embodiment of the present invention.
圖2B示出根據本發明之一個實施例的實現圖1所示DC/DC降壓轉換器結構10的微型元件結構的俯視圖。2B shows a top view of a micro-element structure implementing the DC/DC buck converter structure 10 of FIG. 1 in accordance with one embodiment of the present invention.
圖3示出根據本發明之另一實施例的微型元件結構的側視圖。Figure 3 shows a side view of a micro-element structure in accordance with another embodiment of the present invention.
圖4示出根據本發明之另一實施例的微型元件結構的側視圖。4 shows a side view of a micro-element structure in accordance with another embodiment of the present invention.
101...晶片101. . . Wafer
A,B,C...金屬通孔A, B, C. . . Metal through hole
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