TWI442460B - Method of separating two materials - Google Patents

Description

Method of separating two materials

The present invention relates to a separation method, and more particularly to a method for separating two or the same material, and using Radio Frequency Heating to promote separation of two materials by heat.

The reason why the Light Emitting Diode emits light is mainly due to the physical properties of the semiconductor that is converted into light energy after the application of electrical energy. When a voltage is applied across the positive and negative terminals of the semiconductor to generate a current flowing through the semiconductor, the semiconductor is promoted. The internal electrons and holes are combined with each other. After the combination, the remaining energy is released in the form of light. Depending on the semiconductor material, the energy level of the photons can produce different wavelengths of light, which is released by the human eye. Light of various colors. The light-emitting diode was originally developed in the laboratory in the late 1950s. By 1968, HP began commercial mass production. The early light-emitting diodes had only a monotonous dark red color, which was applied to the indicator lights of electronic products until 1992. After Nichia Corporation of Japan broke through the technical obstacles of blue light diodes, the light-emitting diodes gradually developed multiple colors, and the brightness was also greatly improved. The display was in various packages such as display and surface mount type (SMD). The pattern goes deep into all levels of life.

Most of the light-emitting diodes are called III-V compound semiconductors, which are composed of group V elements such as nitrogen (N), phosphorus (P), arsenic (As), etc., and group III elements including aluminum (Al) and gallium (Ga). ), indium (In), etc., combined with silicon (Si) used in IC semiconductors Different from group IV elements. Traditional Liquid Phase Epitaxy (LPE) and Vapor Phase Epitaxy (VPE), based on gallium phosphide (GaP) or gallium arsenide (GaAs), are used to produce low- and medium-brightness Light-emitting diodes and infrared (IrDa) grains have a brightness below 1 candle (1000mcd). Until 1992, Shuj i Nakamura, a researcher at Nichia Corporation, was able to overcome the blue LED in the special organic metal vapor phase epitaxy (MOCVD) process invented in his laboratory. Manufacturing obstacles. In the organic metal vapor phase epitaxy process invented by Mr. Bai Zhongcun, the semiconductor-related industry can produce high-brightness light-emitting diodes with a brightness of about 6000-8000mcd.

The light-emitting diode is made of aluminum, gallium, indium and phosphorus as a light-emitting layer material on a gallium arsenide (GaAs) substrate, and emits amber color of red, orange and yellow light, which is generally called a quaternary light-emitting diode. The blue and green diodes produced by using gallium nitride (GaN) are called nitride light-emitting diodes, and sapphire is generally used as a substrate for epitaxial processing. The reason why a sapphire material is used as a blue or green photodiode substrate is that a material which emits these light wavelengths is mostly a nitride crystal of gallium (Ga) or indium (In) such as GaN, InGaN or the like. Semiconductors are required to form circuits and quantum wells by epitaxial techniques to "light" the luminescent semiconductor material onto a suitable substrate and then use a development etch or other technique to form the circuit structure. Since these crystal materials have a fixed lattice structure, that is, an arrangement interval between crystal molecules, it is necessary to achieve lattice matching between the film and the substrate in order to smoothly epitaxially. Generally, the materials used in semiconductors are germanium, so it is most suitable for substrates that are long on tantalum. However, these materials, which are blue and green diodes, have a lattice constant that is too far apart (about 17%) from the germanium substrate. If the film of these materials is hard on the germanium substrate, great stress will be generated. And dislocation It destroys the original lattice structure of the crystal, so the cheapest substrate is not available.

In addition, the semiconductor industry does not use gallium nitride itself as its substrate for epitaxy. The reason is that the lattice structure of the nitride material is very defective, and the crystal growth process is very difficult, so the price is very expensive, almost equivalent to diamond, and the light-emitting diode It is impossible for the industry to use the same material as its substrate only for the needs of the epitaxial process. Among other alternative materials, the sapphire (Molecular Structure Al ₂ O ₃ ) has a lattice constant similar to that of GaN, which can be synthesized manually, and the price is relatively cheap, so it is selected as a light-emitting diode. The substrate used in the crystal process. However, the sapphire substrate has lower conductivity and thermal conductivity than the conventional germanium substrate, affecting the use of the light-emitting diode on the circuit and the luminescence lifetime. Therefore, in general, the light-emitting diode will try to crystallize the completed nitride crystal. The replacement of the sapphire substrate to the ruthenium substrate to facilitate the practical application of the light-emitting diode in the future, so how to separate the epitaxial crystal from the sapphire substrate is a topic of concern to semiconductor researchers.

The two methods of laser separation of substrates are also proposed by the United States Patent No. 64202425 and US Pat. No. 6,958,093, respectively, to The Regents of the University of California and Cree, Inc., respectively. The gallium nitride crystal is separated from the sapphire substrate by using the low melting point characteristic of gallium (Ga) metal. The main cutting technology is to directly project the laser beam onto the sapphire substrate, and the sapphire has the physical properties of light transmission to make the laser beam. The emitted energy is absorbed by the gallium nitride epitaxial layer on the substrate and activates the crystal. When the gallium nitride epitaxial layer reaches a temperature of 30 ° C, the crystal structure is destroyed and begins to disintegrate, thereby separating from the sapphire substrate. . Although the patent physically separates the gallium nitride epitaxial layer from the sapphire substrate, the laser beam used can only illuminate the sapphire substrate at a single point, and it is necessary to accumulate a considerable number of scans. Able to make the whole nitrogen The gallium epitaxial layer is completely separated from the sapphire substrate, which will occupy a considerable proportion of the time in the entire semiconductor process, affecting the productivity and efficiency of the light-emitting diode.

In addition, in U.S. Patent No. 6,740,604, the name of Siemens Aktiengesellschaft proposes to separate the gallium nitride epitaxial layer from the sapphire substrate by the radiant energy. The difference from the patent of the California State University is that the gallium nitride epitaxial layer absorbs the electromagnetic effect. The generated radiant energy has a larger range than the energy irradiated by the laser beam on the epitaxial layer, and the radiant energy can be concentrated on the interface between the two, so that the epitaxial layer molecules are lysed by the radiant energy. Separated from the substrate. The separation method proposed by Siemens is indeed more efficient than scanning and cutting with a laser beam. However, the gallium nitride epitaxial layer is a non-conductive electrothermal metal compound, so the radiant energy generated by the electromagnetic effect is It takes time for the epitaxial layer to accumulate and absorb enough radiant energy to cause molecular cleavage. For the limited time reduction of the luminescent bipolar system, further separation methods are still needed.

The separation method proposed by the French semiconductor insulation technology company (Silicon on Insulator Technologies) in US Pat. No. 6,964,914 utilizes the difference in thermal expansion coefficient of the sapphire substrate and the gallium nitride epitaxial layer itself, and the epitaxy is caused by the rapid change of the ambient temperature. The layer creates an extreme stress on the interface with the substrate that causes the epitaxial layer of gallium nitride to separate from the sapphire substrate. The method of stress separation is different from the absorption of externally supplied energy by gallium nitride. The original crystal structure is destroyed at the interface to cause the epitaxial layer molecules to be cracked, and the physical phenomenon of thermal expansion and contraction of the material is utilized to make the epitaxial layer The temperature dip produces enough shrinkage stress at the interface to separate. Because of the uneven shrinkage stress caused by the uneven heating of the gallium nitride epitaxial layer, the separation method cannot form a flat surface after the epitaxial layer is separated, and even the problem of the epitaxial layer fracture occurs, so that the production yield is good. Control is not easy.

The material separation technology proposed by the above patents has a great influence on the yield of the semiconductor process, especially in the process of the light-emitting diode, and a better method is needed to reduce the yield of the affected material, or even improve The final yield on the entire semiconductor process.

In view of the above-mentioned prior art background, in order to improve the defects that may occur in the above separation process and meet the needs of certain interests in the industry, the present invention provides a new method for separating two material semiconductors, which can be used to solve the above-mentioned techniques. The separation method failed to achieve the target.

It is an object of the invention to provide a method of separating two or the same semiconductor material. Taking the light-emitting diode process as an example, the method steps include: forming a high-permeability metal array between a substrate and a semiconductor layer; and heating the high-permeability metal array with a radio frequency (Radio Frequency) to make the high The magnetically permeable metal array is pyrolyzed to separate the substrate from the semiconductor layer. The radio frequency heating method generates electromagnetic induction by a radio frequency generated by a cylindrical metal coil of a radio frequency heating system, causing an eddy current effect of the material, according to The thermal energy equation heats the high permeability metal array.

The above-mentioned high-permeability metal array comprises a plurality of material blocks, which can be formed by physical vapor deposition (PVD), evaporation, sputtering or the like. The material block of the entire high-permeability metal array is covered by the semiconductor layer due to the process. The high-permeability metal array has a distribution density that is positively correlated with the array radius. When the high-permeability metal array is heated by the radio frequency, a uniform outward temperature gradient is generated, resulting in the The high-permeability metal array is cracked from the outside to the inside to prevent the high-permeability metal array from being cracked internally to destroy the structure of the semiconductor layer.

101‧‧‧Sapphire substrate

102‧‧‧High magnetic permeability metal micro-blocks

103‧‧‧ gallium nitride epitaxial layer

104‧‧‧ Carrier Board

105‧‧‧Wireless RF heating device

110-270‧‧‧Steps

The first A diagram is a schematic flow diagram of the separation method of the two materials of the invention; the first B diagram is a schematic diagram of the separation process of the two materials of the invention; the first C diagram is the separation of the two materials of the invention Method 1 is a schematic diagram of the arrangement density of the high-permeability metal array; the second A diagram is a schematic diagram of the separation process of the two materials of the present invention; the second B diagram is a schematic diagram of the separation process of the two materials of the invention; The second C diagram is a schematic diagram of the arrangement density of the high-permeability metal array according to the separation method 2 of the two materials of the present invention.

The invention is explained herein with respect to a method and an implementable example of separating two material semiconductors. In order to thoroughly understand the present invention, detailed steps and compositions thereof will be set forth in the following description. It will be apparent that the practice of the present invention is not limited to the specific details familiar to those skilled in the art of semiconductor fabrication. On the other hand, well-known components or steps are not described in detail to avoid unnecessarily limiting the invention. The preferred embodiments of the present invention are described in detail below, but the present invention may be widely practiced in other embodiments, and the scope of the present invention is not limited by the scope of the following patents. .

The present invention provides a method for separating two material semiconductors, which can be applied to a Light Emitting Diode process, and a gallium nitride (GaN) film. The epitaxial layer is separated from a substrate for sapphire (Sapphire) for epitaxy so that the gallium nitride epitaxial layer can be replaced on a carrier. The main feature of the method is that in the epitaxial process of gallium nitride, a high magnetic permeability metal substance is buried in the epitaxial layer close to the substrate interface by radio frequency heating (Radio Frequency Heating). The principle of electromagnetic induction (Electromagnetic Induction), the high magnetic permeability of the metal material instantaneously generates high heat, promotes the epitaxial layer molecules coated on the metal substance, is lysed by absorption of thermal energy, and finally makes gallium nitride close to the substrate interface. Dissociation, in addition, the present invention is equally applicable to the separation of homogeneous semiconductor materials by a method of separating high magnetic permeability metal species.

The high-permeability metal material used in the present invention generates high heat instantaneously due to the wireless radio frequency heating method, and the technology is a heating method for generating thermal induction by electromagnetic principle. The technical principle is a cylindrical metal coil (Coil) and is connected to a direct current. The power source, when the current passes through the cylindrical metal coil, generates an electromagnetic field (Electromagnetic Field), which affects the metal material in the cylindrical metal coil, and generates an induced electric field (Induction Electric Field). The change of the electromagnetic field size of the cylindrical metal coil causes the induced electric field to fluctuate, and the metal material is excited to move and generate an Eddy Current due to the variation of the induced electric field, and the eddy current is caused by the metal substance. Heat is generated by its own resistance relationship (Resistance Impedance).

According to the above principle of electromagnetic induction, a wireless RF heating device is designed, and its DC power supply is matched with a Power Transistor to generate a high-cycle current of about 20,000 times per second, which changes rapidly and regularly. The direction of current flowing through the cylindrical metal coil causes the metal material in the cylindrical metal coil to rapidly generate high heat. In addition, the thermal energy equation is generated by electromagnetic induction. It can control the amount of thermal energy generated by metal species during the heating process. The parameter d is the diameter of the cylinder, the parameter h is the height of the cylinder, the parameter H is the magnetic field intensity, and the parameter ρ is For the resistance, the parameter μ ₀ is the magnetic permeability of vacuum, the parameter μ _r is the relative permeability, the parameter f is the frequency, and the variable C is The coupling factor and the parameter F are power transmission factors.

In the thermal equation, μ ₀ and μ _r are the permeability correlation coefficients of the metal species in the cylindrical metal coil. If the μ ₀ or μ _r coefficient is higher, the metal material is more magnetically conductive and is generated by electromagnetic induction. The higher the thermal energy, the metal material with higher magnetic permeability is made of iron (Fe), cobalt (Co) and nickel (Ni) in the metal material, which is suitable for the touch of the radio frequency heating method of the present invention. The main purpose of the medium is to raise the temperature to a degree that causes the epitaxial layer molecules to be cracked in a short period of time.

The invention is a method for separating two material semiconductors, and taking a gallium nitride (GaN) epitaxial layer from a sapphire substrate as an example to illustrate the main technology of the present invention in a light emitting diode process. Example. The substrate used in the process may also be an alumina (Al ₂ O ₃ ) substrate, a tantalum carbide (SiC) substrate, a lithium aluminate substrate (LiAlO ₂ ), a lithium gallate substrate (LiGaO ₂ ), a germanium (Si) substrate, or a nitrogen. Gallium (GaN) substrate, zinc oxide (ZnO) substrate, aluminum zinc oxide substrate (AlZnO), gallium arsenide (GaAs) substrate, gallium phosphide (GaP) substrate, gallium antimonide substrate (GaSb), indium phosphide ( InP) substrate, indium arsenide (InAs) substrate, zinc selenide (ZnSe) substrate, metal substrate, and the like.

Which material substrate is selected for the light-emitting diode is determined according to the physical properties of the semiconductor of the various light-emitting diodes. For example, a general II-VI semiconductor compound uses a zinc selenide substrate or a zinc oxide substrate as an epitaxial substrate; a III-arsenide or a phosphide usually uses a gallium arsenide substrate, a gallium phosphide substrate, and a phosphorus Indium-indium substrate, or indium arsenide substrate; while III-nitride is commonly used in commercial sapphire substrates, or tantalum carbide substrates, the current experimental stage uses lithium aluminate substrates, lithium gallate substrates, germanium substrates, or It is an alumina zinc substrate or the like. In addition, the lattice structure and lattice constant are another important basis for selecting an epitaxial substrate. If the difference in lattice constant is too large, it is often necessary to form a buffer layer first to obtain a better epitaxial quality.

Referring to FIG. 1A, the main feature of the present invention is that in the epitaxial process of the semiconductor, the substrate (101) for epitaxy is incorporated into the high-permeability metal micro-block (102), and the high-magnetic is heated by the radio frequency. The conductive metal micro-block (102) is such that the gallium nitride epitaxial layer (103) surrounding it is thermally cracked. In an embodiment of the invention, the epitaxial material used is a III-nitride, in particular using gallium nitride (GaN), and the epitaxial substrate used in combination with a commercially available sapphire substrate or carbonization is currently commercially available.矽 (SiC) substrate. However, it will be understood by those skilled in the art that the choice of the epitaxial material of the present invention is not limited to III-nitride, or even a material such as gallium nitride. Any of the III-V semiconductor compounds or the II-VI semiconductor compounds can be used in the present invention.

In the first embodiment, in the step (110) shown in the first A diagram, in the semiconductor epitaxy Before the process is performed, a high-permeability metal array is disposed on the sapphire substrate (101) for epitaxy, wherein the high-permeability metal array is composed of a plurality of high-permeability metal micro-blocks (102), and the The array arrangement adopts the gradual increase of the tightness between the metal micro-blocks from the center. Please refer to the first C diagram, which can be arranged in a regular matrix or a circular array, or even irregular as shown in the first C-picture. Array. When the high-permeability metal array is heated, a uniform outward temperature gradient is generated, causing the high-permeability metal array to be cracked from the outside to the inside to prevent the high-permeability metal array from being cracked internally to destroy the gallium nitride. The structure of the crystal layer (103). The high-permeability metal micro-block (102) used in the metal array is mainly a ferromagnetic material, a mo-metal, a high-magnetic alloy (Permalloy), an electromagnetic steel (Electrical steel), a nickel-zinc ferrite. Nickel zinc ferrite, manganese zinc ferrite, steel and other materials.

The above-mentioned arrangement of the high-permeability metal array can be performed on the sapphire substrate (101) for epitaxial crystal by physical vapor deposition (PVD), evaporation, sputtering or the like. form. After the metal array is disposed, please refer to step (120) of FIG. A to introduce a metal array substrate (101) into a metal organic vapor phase epitaxy (MOCVD) to allow gallium nitride ( GaN) generates a gallium nitride epitaxial layer (103) from the sapphire substrate (101) from the spacing of the metal microblocks (102).

The sapphire substrate (101) is subjected to an organometallic vapor phase epitaxial process to form a layer of gallium nitride epitaxial layer (103), and the gallium nitride epitaxial layer (103) is flooded over the metal array on the sapphire substrate (101). And each high-permeability metal micro-block (102) is The gallium nitride epitaxial layer (103) is coated. Referring to step (130) of FIG. A, a carrier (104) is bonded to the surface of the gallium nitride epitaxial layer (103), and the carrier (104) is used for future loading from the sapphire substrate (101). Separating gallium nitride epitaxial layer (103), the carrier (104) material may be bismuth (Si), gold bismuth (Au-Si), gold-silver alloy (Au-Ag), tantalum carbide (SiC), arsenic Gallium (GaAs), copper (Cu), copper-tungsten alloy (Cu-W). Since the carrier (104) is bonded to the surface of the gallium nitride epitaxial layer (103), it is not the main object of the present invention. Therefore, the bonding method will not be described in detail by the characters and the drawings.

Referring to step (140) of FIG. B, the gallium nitride epitaxial layer (103) together with the sapphire substrate (101) and the carrier (104) are sent to a radio frequency heating (Radio Frequency Heating) device (105). ) Doing heat. The heating device (105) is mainly composed of a cylindrical metal coil and a DC power supply, wherein the cylindrical metal coil is large enough to accommodate the carrier plate (104), the gallium nitride epitaxial layer (103), a high permeability metal micro-block (102) and the sapphire substrate (101). The DC power supply of the radio frequency heating device (105) further includes a power transistor for causing the DC power supply to generate a high-frequency current to the cylindrical metal coil. When a high-frequency current flows through the cylindrical metal coil, the high-permeability metal micro-block (102) of the metal array in the gallium nitride epitaxial layer (103) generates thermal energy due to an Electromagnetic Induction Effect. The gallium nitride epitaxial layer (103) is thus heated.

The radio frequency heating device (105) continuously generates a high-frequency current in its cylindrical metal coil, so that the high-permeability metal micro-block (102) of the metal array generates thermal energy due to electromagnetic induction, and the radio frequency heating device (105) is based on the thermal energy equation. Controlling the thermal energy generated by the high permeability metal micro-block (102). Please refer to step (150) of FIG. B until the heat generated by the high-permeability metal micro-block (102) of the metal array is sufficient to destroy the gallium nitride epitaxial layer (103) and the sapphire substrate (101). The above-mentioned chaining force finally causes the gallium nitride epitaxial layer (102) to undergo molecular cracking in a wide range and dissociate from the sapphire substrate (101).

As shown in step (160) of Figure B, the carrier (104) is finally loaded with the gallium nitride epitaxial layer (103) separated from the sapphire substrate (101), also at the end of the entire separation process. The resulting product has the gallium nitride epitaxial layer (103) on the carrier (104).

In addition to the above embodiments, the present invention has a second embodiment for achieving separation of two semiconductor materials. Please refer to FIG. 2A, which uses the substrate and the semiconductor material, and still uses the sapphire substrate (101) and the gallium nitride (GaN) material as an example for the present invention, and does not limit the application of the present invention to other substrates. semiconductors. In step 210 of the second A diagram, the sapphire substrate (101) is used as a medium for the semiconductor epitaxial process, and a gallium nitride epitaxial layer (103) is formed on the surface of the sapphire substrate (101). The semiconductor epitaxial process adopts a Metal Organic Chemistry Vapor Deposition (MOCVD) to cause gallium nitride (GaN) to form a gallium nitride epitaxial layer on the sapphire substrate (101) (103). .

In addition, if the above-mentioned organometallic vapor phase epitaxial process is used to form other III-nitride epitaxial layers, or even a III-V semiconductor compound or a II-VI semiconductor compound epitaxial layer, the substrate used in the epitaxial process (Substrate), which must be selected according to the physical properties of the semiconductor, and the substrate may be an alumina (Al ₂ O ₃ ) substrate, a tantalum carbide (SiC) substrate, a lithium aluminate substrate (LiAlO ₂ ), or a lithium gallate substrate ( LiGaO ₂ ), ytterbium (Si) substrate, gallium nitride (GaN) substrate, zinc oxide (ZnO) substrate, aluminum zinc oxide substrate (AlZnO), gallium arsenide (GaAs) substrate, gallium phosphide (GaP) substrate, germanium Gallium substrate (GaSb), indium phosphide (InP) substrate, indium arsenide (InAs) substrate, zinc selenide (ZnSe) substrate, metal substrate, and the like.

Referring to step (220) of FIG. 2A, when the first half of the organometallic vapor phase epitaxial process is performed, a thin layer of gallium nitride epitaxial layer (103) is formed on the sapphire substrate (101), and then A metal array is disposed on the surface of the gallium nitride epitaxial layer (103), wherein the metal array is composed of a plurality of high magnetic permeability metal micro-blocks (102), the material of which is mainly ferromagnetic material, molybdenum (Mu) -metal), Permalloy, Electro Steel, Nickel Zinc Ferrite, Manganese Zinc Ferrite, Steel, etc.

The metal array is arranged in such a manner that the tightness between the high-permeability metal micro-blocks (102) is gradually increased outward from the surface center of the gallium nitride epitaxial layer (103). Please refer to the second C diagram. The arrangement may be a regular matrix or a circular array, or even an irregular array as shown in the second C diagram. The reason for the array setting method is that when the high-permeability metal array is heated, a uniform outward temperature gradient can be generated, causing the high-permeability metal array to be cracked from the outside to the inside to avoid the high-permeability metal array from being internally first. The structure of the gallium nitride epitaxial layer (103) is destroyed by cracking. The metal array is subjected to physical vapor deposition (PVD), evaporation, sputtering, etc., and the plurality of high-permeability metal micro-blocks (102) are applied to the gallium nitride. The epitaxial layer (103) is formed on the surface.

Referring to step (230) of FIG. 2A, after the metal array is disposed on the surface of the gallium nitride epitaxial layer (103), as in step 220 of the second A diagram, the second half of the organometallic gas is continued. Phase epitaxial process to make each high magnetic permeability metal micro block ( 102) is covered by a gallium nitride epitaxial layer (103) until the gallium nitride epitaxial layer (103) reaches a desired thickness in the process. Referring to step (240) of FIG. 2A, the entire material of the organic metal vapor phase epitaxial process is completed, and a carrier (104) is bonded to the surface of the gallium nitride epitaxial layer (103). (104) for replacing the sapphire substrate (101) in the future to carry the last gallium nitride epitaxial layer (103), the carrier (104) material may be bismuth (Si), gold bismuth (Au-Si), Gold-silver alloy (Au-Ag), tantalum carbide (SiC), gallium arsenide (GaAs), copper (Cu), copper-tungsten alloy (Cu-W). Since the carrier (104) is bonded to the surface of the gallium nitride epitaxial layer (103), it is not the main object of the present invention. Therefore, the bonding method will not be described in detail by the characters and the drawings.

Referring to step (250) of FIG. B, the carrier (104) bonded to the surface of the gallium nitride epitaxial layer (103), including the bottom sapphire substrate (101), is sent to the radio frequency heating device. (Radio Frequency Heating) (105), the heating device (105) is also composed of a cylindrical metal coil and a DC power supply, wherein the cylindrical metal coil is large enough to accommodate the carrier layer including the uppermost layer. (104), the intermediate layer of gallium nitride epitaxial layer (103) and the underlying sapphire substrate (101) of the entire semiconductor material. In addition, the DC power supply of the heating device (105) also includes a power transistor to generate a high-frequency current to the cylindrical metal coil. The operation principle of the entire radio frequency heating device (105) is explained as explained in the foregoing description, and therefore will not be further described.

As shown in step (260) of FIG. B, when the high-frequency current generated by the radio frequency heating device (105) flows through the cylindrical metal coil therein, due to the Electromagnetic Induction Effect, The array of high-permeability metal micro-blocks (102) located in the gallium nitride epitaxial layer (103) accelerates temperature rise, straight The heat generated by the entire metal array is sufficient to cause the gallium nitride epitaxial layer (103) molecules to be cleaved, and finally a large range of molecular cleavage occurs, dissociating from the sapphire substrate (101).

After the dissociation of the gallium nitride epitaxial layer (103) is completed, the entire semiconductor material is replaced by the carrier (104) instead of the sapphire substrate (101), as shown in step (270) of FIG. The gallium nitride epitaxial layer (103), also at the end of the entire separation process, results in a product of the gallium nitride epitaxial layer (103) on the carrier (104).

In the third embodiment, the semiconductor material other than the gallium nitride epitaxial layer of the above method is used, for example, the epitaxial material is III-nitride, or is a III-V semiconductor compound, and may also be a II-VI semiconductor. a compound, even like an Al _x In _y Ga _(1-xy) N semiconductor compound, wherein x and y are both ≦1. Before the semiconductor epitaxial process is performed, a metal array is disposed on the substrate for epitaxy, wherein the substrate may be an aluminum oxide (Al ₂ O ₃ ) substrate, a tantalum carbide (SiC) substrate, or a lithium aluminate substrate (LiAlO _{2 ).} Lithium gallate substrate (LiGaO ₂ ), bismuth (Si) substrate, gallium nitride (GaN) substrate, zinc oxide (ZnO) substrate, aluminum zinc oxide substrate (AlZnO), gallium arsenide (GaAs) substrate, phosphating a gallium (GaP) substrate, a gallium antimonide substrate (GaSb), an indium phosphide (InP) substrate, an indium arsenide (InAs) substrate, a zinc selenide (ZnSe) substrate, a metal substrate, or the like, and the substrate is selected according to each The physical properties of the crystalline material originally determined by the semiconductor substrate.

The metal array on the substrate is composed of a plurality of high-permeability metal micro-blocks, and is formed by physical vapor deposition (PVD), evaporation (evaporation), sputtering (Sputtering), and the like. The plurality of high magnetic permeability metal microblocks can be formed on the surface of the semiconductor epitaxial layer. High permeability Metallic micro-blocks such as ferromagnetic materials, molybdenum (Mu-metal), high-permeability alloy (Permalloy), electromagnetic steel (Electrical steel), nickel-zinc ferrite magnet (nickel zinc ferrite), manganese-zinc ferrite magnet (manganese zinc ferrite), steel (Steel) and other materials. The arrangement of the metal arrays is such that the tightness between the metal micro-blocks is gradually increased from the center to the outside. After the metal array is disposed, the metal array substrate is introduced into the organometallic vapor phase epitaxial process, so that the semiconductor epitaxial layer forms a semiconductor epitaxial layer in the interval between the metal microblocks until the thickness of the epitaxial layer reaches the process requirement. .

The substrate is subjected to an epitaxial process to form a semiconductor epitaxial layer having a thickness higher than a metal array on the substrate, and each metal micro-block is covered by the semiconductor epitaxial layer at the top of the semiconductor epitaxial layer The surface is bonded to a layer of semiconductor material which is a substrate for replacing the original epitaxial process. And sending the semiconductor epitaxial layer together with the original substrate and the semiconductor material layer thereon to a radio frequency heating device (Radio Frequency Heating), the heating device is mainly composed of a cylindrical metal coil and a DC power supply, wherein The cylindrical metal coil is of sufficient size to accommodate the entire semiconductor material. When the high-frequency current generated by the DC power supply continuously flows through the cylindrical metal coil, the metal array in the epitaxial layer of the semiconductor is accelerated by the magnetic permeability effect until the heat generated by the metal array is sufficient for the semiconductor The molecules of the epitaxial layer are cleaved, and finally the semiconductor epitaxial layer is molecularly cleaved and dissociated from the substrate, and the semiconductor material layer bonded to the surface of the epitaxial layer of the semiconductor becomes a new substrate of the epitaxial layer of the semiconductor. .

In the fourth embodiment of the present invention, the semiconductor epitaxial layer to be obtained from the epitaxial process, the material used for the semiconductor epitaxial layer includes III-nitride, or may be a III-V semiconductor compound or a II-VI semiconductor compound. Even an Al _x In _y Ga _(1-xy) N semiconductor compound in which x and y are both ≦1. Forming a substrate and performing an organometallic vapor phase epitaxial process to form the semiconductor epitaxial layer, wherein the substrate may be an aluminum oxide (Al ₂ O ₃ ) substrate, a tantalum carbide (SiC) substrate, or a lithium aluminate substrate (LiAlO) ₂ ) Lithium gallate substrate (LiGaO ₂ ), bismuth (Si) substrate, gallium nitride (GaN) substrate, zinc oxide (ZnO) substrate, aluminum zinc oxide substrate (AlZnO), gallium arsenide (GaAs) substrate, phosphorus Gallium gallium (GaP) substrate, gallium antimonide substrate (GaSb), indium phosphide (InP) substrate, indium arsenide (InAs) substrate, zinc selenide (ZnSe) substrate, metal substrate, etc., and the selection of the substrate is in accordance with each The semiconductor epitaxial layer material is determined by the physical properties of the semiconductor to determine which material is the substrate.

When the organic metal vapor phase epitaxy process is carried out to the middle stage, a layer of semiconductor epitaxial layer is formed on the substrate for epitaxy. Forming a metal array on the surface of the epitaxial layer of the semiconductor, the metal array being composed of a plurality of high-permeability metal micro-blocks, such as ferromagnetic material, molybdenum (Mu-metal), Permalloy, Electro Steel, Nickel Zinc Ferrite, Manganese Zinc Ferrite, Steel .

The metal array is arranged in such a manner that the tightness between the metal micro-blocks is gradually increased from the center to the outside. When the array of high-permeability metal is heated, a uniform outward temperature gradient can be generated, causing the array of high-permeability metal to be cracked from the outside to the inside to avoid the structure of the high-permeability metal array being cracked by internal cracking to destroy the structure of the semiconductor layer. .

After the metal array is disposed, the semiconductor epitaxial layer having the metal array includes a substrate underneath, and the organic metal vapor phase epitaxial process is further introduced, so that the semiconductor epitaxial layer generates a semiconductor beam in the interval between the metal microblocks. The crystal layer until the thickness of the epitaxial layer reaches the requirements of the process.

The substrate is subjected to an epitaxial process to complete the epitaxial layer of the semiconductor. The thickness of the epitaxial layer of the semiconductor is higher than the metal array on the substrate, and each metal micro-block is covered by the epitaxial layer of the semiconductor, and then the epitaxial layer of the semiconductor The top surface is bonded to a layer of semiconductor material that is primarily intended to replace the substrate for the prior epitaxial process. After the bonding process is completed, the semiconductor epitaxial layer is sent to the radio frequency heating device together with the original substrate and the semiconductor material layer thereon, the heating device is mainly composed of a cylinder of a size large enough to accommodate the entire semiconductor material. A metal coil and a DC power supply.

When the radio frequency heating device is activated, a high-frequency current generated by the DC power supply continuously flows through the cylindrical metal coil, and the metal array in the epitaxial layer of the semiconductor is accelerated by the magnetic permeability effect until the The heat generated by the metal micro-block of the metal array is sufficient to destroy the original chain strength of the semiconductor epitaxial layer, and the cleavage from the interface with the metal array gradually causes molecular cracking of the semiconductor epitaxial layer to a large extent, and finally Dissociation on the substrate. The semiconductor material layer bonded to the surface of the semiconductor epitaxial layer replaces the original substrate to become a new substrate of the semiconductor epitaxial layer.

Obviously, many modifications and differences may be made to the invention in light of the above description. It is therefore to be understood that within the scope of the appended claims, the invention may be The above are only the preferred embodiments of the present invention, and are not intended to limit the scope of the claims of the present invention; all other equivalent changes or modifications which are not departing from the spirit of the present invention should be included in the following patents. Within the scope.

101‧‧‧Sapphire substrate

102‧‧‧High magnetic permeability metal micro-blocks

103‧‧‧ gallium nitride epitaxial layer

104‧‧‧ Carrier Board

105‧‧‧Wireless RF heating device

140~160‧‧‧Steps

Claims (11)

A method of separating two materials, comprising: forming a high-permeability metal array between a substrate and a semiconductor layer, the high-permeability metal array comprising a plurality of spaced apart high-permeability metal micro-blocks, the plurality of The density of the high-permeability metal micro-blocks is gradually increased from the center of the high-permeability metal array; and the high-permeability metal array is heated by a radio frequency to cause the high-magnetic metal array to generate a high temperature to The substrate and the high permeability metal array are separated from the semiconductor layer. The method for separating two materials according to claim 1, wherein the forming the high-permeability metal array between the substrate and the semiconductor layer comprises the steps of: forming the high-permeability metal array on the substrate; The semiconductor layer is grown from the substrate between the high permeability metal microblocks such that the semiconductor layer encapsulates the high permeability metal array. The method of separating two materials according to claim 1, wherein forming the high-permeability metal array between the substrate and the semiconductor layer comprises the steps of: forming the semiconductor layer on the substrate; forming the high magnetic permeability A metal array is on the semiconductor layer; and the semiconductor layer is continuously epitaxially grown by the semiconductor layer between the high permeability metal micro-blocks such that the semiconductor layer encapsulates the high-permeability metal array. According to the method of separating two materials according to claim 1, the material layer may be formed on the semiconductor prior to heating the high-permeability metal array by radio frequency. The method for separating two materials according to claim 4, wherein the material layer may be bismuth (Si), gold lanthanum (Au-Si), gold-silver alloy (Au-Ag), tantalum carbide (SiC), arsenic. Gallium (GaAs), copper (Cu), copper-tungsten alloy (Cu-W). The method for separating two materials according to claim 1, wherein the high magnetic permeability metal array comprises: a ferromagnetic material, a mo-metal, a permalloy, and an electromagnetic steel. ), nickel zinc ferrite, manganese zinc ferrite, steel. A method of separating two materials according to the scope of claim 6 wherein the ferromagnetic material comprises iron (Fe), cobalt (Co), nickel (Ni), and alloys thereof. A method of separating two materials according to the first aspect of the patent application, wherein the semiconductor layer may be Al _x In _y Ga _(1-xy) N, wherein x and y are both 1. The method for separating two materials according to claim 1, wherein the substrate may be a sapphire (Al ₂ O ₃ ) substrate, a tantalum carbide (SiC) substrate, a lithium aluminate substrate (LiAlO ₂ ), or a lithium gallate substrate. (LiGaO ₂ ), ytterbium (Si) substrate, gallium nitride (GaN) substrate, zinc oxide (ZnO) substrate, aluminum zinc oxide substrate (AlZnO), gallium arsenide (GaAs) substrate, gallium phosphide (GaP) substrate, A gallium antimonide substrate (GaSb), an indium phosphide (InP) substrate, an indium arsenide (InAs) substrate, a zinc selenide (ZnSe) substrate, and a metal substrate. The method of separating two materials according to claim 1, wherein the high-permeability metal array is caused by a radio frequency eddy current effect generated by a cylindrical coil of a radio frequency heating system. Based on Heating, where d is the diameter of the cylinder, h is the height of the cylinder, H is the magnetic field intensity, ρ is the resistance, μ ₀ is the magnetic permeability of vacuum, μ _r is the relative permeability, f is the frequency, C is the coupling factor, F system For the power transmission factor. According to the method for separating and separating two materials according to the first aspect of the patent application, the above-mentioned high-permeability metal array can be subjected to physical vapor deposition (PVD), evaporation (evaporation), sputtering (Sputtering), etc. The way is formed.