TWI441298B - Chip on flexible printed circuit type semiconductor package - Google Patents

Chip on flexible printed circuit type semiconductor package Download PDF

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Publication number
TWI441298B
TWI441298B TW096126121A TW96126121A TWI441298B TW I441298 B TWI441298 B TW I441298B TW 096126121 A TW096126121 A TW 096126121A TW 96126121 A TW96126121 A TW 96126121A TW I441298 B TWI441298 B TW I441298B
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cof
semiconductor package
type semiconductor
printed circuit
heating pad
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TW096126121A
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TW200816438A (en
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Si-Hoon Lee
Sa-Yoon Kang
Kyoung-Sei Choi
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Samsung Electronics Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736Metallic materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27Manufacturing methods

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Description

可撓印刷電路板上晶片式半導體封裝 Chip-type semiconductor package on flexible printed circuit board

本發明關於半導體封裝,且更特定而言關於可撓印刷電路板上晶片式半導體封裝。 This invention relates to semiconductor packages, and more particularly to wafer-type semiconductor packages on flexible printed circuit boards.

由於對於連結後可驅動液晶顯示器(LCD)面板的高積度積體電路(IC)驅動器的需求,因此發展出各種半導體封裝。一般而言,捲帶式封裝(Tape Carrier Package,TCP)、玻璃覆晶封裝(Chip On Glass,COG)以及可撓印刷電路板上晶片(Chip On Flexible Printed Circuit,COF)可為用於驅動LCD面板之半導體式封裝。自80年代以來,TCP式半導體封裝已用於驅動高解析度螢幕顯示器。TCP式半導體封裝為LCD領域中常使用的半導體封裝方法之一。然而,TCP式半導體封裝可能具有較高的生產成本及/或其生產率未與成本相當。 Various semiconductor packages have been developed due to the demand for highly integrated integrated circuit (IC) drivers that can drive liquid crystal display (LCD) panels after bonding. In general, a Tape Carrier Package (TCP), a Chip On Glass (COG), and a Chip On Flexible Printed Circuit (COF) can be used to drive an LCD. The semiconductor package of the panel. Since the 1980s, TCP-type semiconductor packages have been used to drive high-resolution screen displays. The TCP type semiconductor package is one of the semiconductor package methods commonly used in the field of LCDs. However, TCP-type semiconductor packages may have higher production costs and/or their productivity is not comparable to cost.

因此,TCP式半導體封裝已被COF式半導體封裝取代,且COF式半導體封裝在LCD領域中之應用漸增。COF式半導體封裝被用為LCD IC驅動器以相呼應於尺寸縮減及/或較高操作速度之IC驅動器。 Therefore, TCP type semiconductor packages have been replaced by COF type semiconductor packages, and the application of COF type semiconductor packages in the field of LCDs is increasing. COF-type semiconductor packages are used as LCD IC drivers to accommodate IC drivers that are downsized and/or operating at higher speeds.

近來,為了實現較高解析度之顯示設備(例如,LCD面板),IC驅動器之驅動負荷亦隨著如同電視與螢幕顯示器之驅動頻率自60Hz增加至120Hz而增加。 Recently, in order to realize a higher resolution display device (for example, an LCD panel), the driving load of the IC driver also increases as the driving frequency of the television and the screen display increases from 60 Hz to 120 Hz.

在一實施例中,可撓印刷電路板上晶片(COF)式半 導體封裝可包括:可撓薄膜、在可撓薄膜上之半導體IC晶片以及在可撓薄膜上之加熱墊。 In one embodiment, a flexible printed circuit board (COF) half The conductor package can include a flexible film, a semiconductor IC wafer on the flexible film, and a heating pad on the flexible film.

在另一實施例中,可撓印刷電路板上晶片(COF)式半導體封裝可包括:可撓薄膜、在可撓薄膜上之半導體IC晶片以及在半導體IC晶片與可撓薄膜上之加熱墊,其中加熱墊包括對應於半導體IC晶片之拐角邊緣之狹槽。 In another embodiment, a flexible printed circuit board (COF) semiconductor package can include: a flexible film, a semiconductor IC wafer on the flexible film, and a heating pad on the semiconductor IC wafer and the flexible film. Wherein the heating pad includes a slot corresponding to a corner edge of the semiconductor IC chip.

在一實施例中,可撓印刷電路板上晶片(COF)式半導體封裝可包括:可撓薄膜、在可撓薄膜上之半導體IC晶片以及在可撓薄膜上之包括狹槽的加熱墊。 In one embodiment, a flexible printed circuit board (COF) semiconductor package can include a flexible film, a semiconductor IC wafer on a flexible film, and a heated pad including a slot on the flexible film.

在一實施例中,COF式半導體封裝可調節或耗散過量熱。 In an embodiment, the COF-type semiconductor package can regulate or dissipate excess heat.

應瞭解,當元件或層被稱作在另一元件或層“上”、“連接至”或“耦接至”另一元件或層,其可能直接在另一元件或層上,直接連接至或耦接至另一元件或層或可能存在插入元件或層。相反,當元件被稱作直接在另一元件或層“上”、“直接連接至”或“直接耦接至”另一元件或層,則不可存在插入元件或層。如本文中所使用,術語“及/或”包括相關聯之列出項目中之一或多者之任何組合與所有組合。應瞭解,當元件或層被稱作在另一元件或層“上”、“連接至”或“耦接至”另一元件或層,直接在另一元件或層“上”,“直接連接至”或“直接耦接至”另一元件或層時,其可在元件或層之上方、下方或側面。 It will be understood that when an element or layer is referred to as "on", "connected to" or "coupled" to another element or layer, it may be directly connected to another element or layer Or coupled to another element or layer or there may be an intervening element or layer. In contrast, when an element is referred to as being "directly on", "directly connected" or "directly connected" to another element or layer, the element or layer is not present. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items. It will be understood that when an element or layer is referred to as "on", "connected to" or "coupled" to another element or layer, "directly" or "directly" When it is "directly coupled" to another element or layer, it can be above, below or to the side of the element or layer.

應瞭解,儘管可在本文中使用術語第一、第二、第三等來描述各種元件、組件、區域、層及/或區段,但此等元件、組件、區域、層及/或區段不應受此等術語限制。此等術語可僅用於區別一個元件、組件、區域、層或區段與另一區域、層或區段。因此,在不偏離本發明之教示的情況下,下文所論述之第一元件、組件、區域、層或區段可能被稱作第二元件、組件、區域、層或區段。 It will be appreciated that, although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, such elements, components, regions, layers and/or sections It should not be limited by these terms. The terms may be used to distinguish one element, component, region, layer or section from another region, layer or section. Thus, a first element, component, region, layer or section that is discussed below may be referred to as a second element, component, region, layer or section, without departing from the teachings of the invention.

為便於描述起見,可在本文中使用空間關係術語(諸如,在……“之下”、“下方”、“下部”、“上方”、“上部”以及類似術語)來描述如在圖式中所說明之一個元件或特徵與另一(其他)元件或特徵之關係。應瞭解,空間關係術語可能意欲涵蓋在使用中或操作中除在圖式中所描繪之定向之外的設備之不同定向。舉例而言,若在圖式中之設備翻轉,描述為在其他元件或特徵“下方”或“之下”的元件將之後定向於在其他元件或特徵“上方”。因此,實例術語“下方”可涵蓋上方與下方之定向。設備可能另外定向(旋轉90度或處於其他定向)且在本文中使用空間關係描述詞來相應地作出解釋 For ease of description, spatially related terms (such as "under", "below", "lower", "above", "upper", and the like) may be used herein to describe as in the drawings. The relationship between one element or feature described in the specification and another (other) element or feature. It will be appreciated that spatially relative terms may be intended to encompass different orientations of the device in use or in operation in addition to the orientation depicted in the drawings. For example, an element that is "under" or "beneath" or "an" or "an" Thus, the example term "below" can encompass the orientation above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial relationship descriptors are used herein to interpret accordingly

本文中所使用之術語僅出於描述實施例之目的且並非意欲限制。如本文中所使用,除非文章清楚地表明並非如此,否則單數形式“一”及“所述”亦可能意欲包括複數形式。另外應瞭解,當在本說明書中使用時,術語“包含”指明所述特徵、整數、步驟、操作、元件及/或組件之存在,但並不排除一或多個其他特徵、整數、步驟、操作、元件、 組件及/或其群組之存在。 The terminology used herein is for the purpose of describing the embodiments and is not intended to be limiting. As used herein, the singular forms "" In addition, the term "comprising", when used in the specification, indicates the presence of the features, integers, steps, operations, components and/or components, but does not exclude one or more other features, integers, steps, Operation, components, The existence of components and/or their groups.

可在本文中參考可能為理想化實施例(及中間結構)之示意性說明之橫截面說明來描述實施例。因此,預期由於(例如)製造技術及/或容差而造成與說明之形狀之變化。因此,實施例不應被解釋為限於本文中所說明之區域的特定形狀而是將包括(例如)由於製造而造成之形狀之偏差。因此,在圖式中所說明之區域在本質上為示意性的且其形狀並非意欲說明設備之區域的實際形狀且並非意欲限制實施例。 Embodiments may be described herein with reference to cross-sectional illustrations that may be illustrative of the preferred embodiments (and intermediate structures). Accordingly, variations from the shapes of the descriptions are contemplated as a result of, for example, the manufacturing techniques and/or tolerances. Thus, the examples are not to be construed as limited to the particular shapes of the embodiments described herein. Therefore, the regions illustrated in the figures are illustrative in nature and are not intended to illustrate the actual shape of the region of the device and are not intended to limit the embodiments.

除非另外定義,否則本文中所使用之所有術語(包括技術以及科學術語)具有與一般熟習此項技藝者一般理解相同的意義。另外,應瞭解,除非清楚地如此定義,否則諸如在一般使用之字典中所定義之術語的術語應被解釋為具有與其在相關技術之情形下之意義一致的意義且不應被解釋為理想化的或過於正式的意義。 All terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those skilled in the art, unless otherwise defined. In addition, it should be understood that the terms such as the terms defined in the commonly used dictionary should be interpreted as having a meaning consistent with their meaning in the context of the related art and should not be construed as idealized unless clearly defined as such. Or too formal meaning.

圖1可為根據實施例之具有加熱墊20之可撓印刷電路板上晶片(COF)式半導體封裝1的橫截面圖。參看圖1,COF式半導體封裝1可包括安置於可撓薄膜11上之半導體IC晶片18。可撓薄膜11可包括下部絕緣層10、引線層(lead layer)12及/或表面絕緣層14。舉例而言,下部絕緣層10可能為聚醯亞胺,引線層12可能為銅,而表面絕緣層14可能為表面抗蝕劑層。在水平方向上,多個引線層12可能彼此分離地安置於下部絕緣10上且引線層12之內端可能經安置而在中央區域中集中。表面絕緣層14可覆蓋 引線層12且暴露引線層12之內端。 1 may be a cross-sectional view of a flexible printed circuit board (COF) type semiconductor package 1 having a heating pad 20 in accordance with an embodiment. Referring to FIG. 1, a COF-type semiconductor package 1 may include a semiconductor IC wafer 18 disposed on a flexible film 11. The flexible film 11 may include a lower insulating layer 10, a lead layer 12, and/or a surface insulating layer 14. For example, the lower insulating layer 10 may be a polyimide, the lead layer 12 may be copper, and the surface insulating layer 14 may be a surface resist layer. In the horizontal direction, a plurality of lead layers 12 may be disposed on the lower insulation 10 separately from each other and the inner ends of the wiring layers 12 may be disposed to be concentrated in the central region. Surface insulating layer 14 can be covered The lead layer 12 is exposed and the inner end of the lead layer 12 is exposed.

在半導體IC晶片18與可撓薄膜11之間的區中,可提供底部填料16以加固半導體IC晶片18與可撓薄膜11。 In the region between the semiconductor IC wafer 18 and the flexible film 11, an underfill 16 may be provided to reinforce the semiconductor IC wafer 18 and the flexible film 11.

加熱墊20可藉由包括導電材料之黏結層21(例如,基於丙烯酸之黏結層)附著至可撓薄膜11之下部絕緣層10。自半導體IC晶片18產生之熱在穿過底部填料16、引線層12及/或下部絕緣層10之後,可由加熱墊20發散。在實施例中,加熱墊20之傳導率高於下部絕緣層10之傳導率。舉例而言,加熱墊20可能由金屬材料例如是鋁等製成。為了增加抗熱性,黏結層21可安置於加熱墊20與下部絕緣層10之間。黏結層21可能包括具傳導能力的材料,例如,金屬顆粒及/或金屬球。黏結層21可能包括鋁顆粒或球。 The heating pad 20 may be attached to the insulating layer 10 under the flexible film 11 by a bonding layer 21 (for example, an adhesive layer based on acrylic) including a conductive material. The heat generated from the semiconductor IC wafer 18 may be diverged by the heating pad 20 after passing through the underfill 16, the wiring layer 12, and/or the lower insulating layer 10. In an embodiment, the conductivity of the heating pad 20 is higher than the conductivity of the lower insulating layer 10. For example, the heating pad 20 may be made of a metallic material such as aluminum or the like. In order to increase heat resistance, the adhesive layer 21 may be disposed between the heating pad 20 and the lower insulating layer 10. The bonding layer 21 may include a conductive material such as metal particles and/or metal balls. The bonding layer 21 may include aluminum particles or balls.

參看圖1與圖3,加熱墊20之形狀可為矩形。在COF式半導體封裝1之製造過程中,多個半導體IC晶片18可安置於單個大範圍的可撓薄膜上。在自大範圍的可撓薄膜切割每一個別COF式半導體封裝1之前,整個可撓薄膜可輸送至用以切割個別COF式半導體封裝1之裝置。然而,要將整個大範圍的可撓薄膜輸送過去是不可能的。也就是說,可能需要將可撓薄膜纏繞成捲狀。在將經纏繞之可撓薄膜輸送至適當裝置之後,方可展開可撓薄膜,且接著,可自可撓薄膜切下個別COF式半導體封裝1。然而,如在圖3中箭頭所指,當重複地纏繞並展開可撓薄膜時,會有作用力集中於加熱墊20之邊緣,如在圖1中“A”指示。 這些作用利可能造成加熱墊20之拐角與可撓薄膜分離。 Referring to Figures 1 and 3, the shape of the heating pad 20 can be rectangular. In the fabrication of the COF-type semiconductor package 1, a plurality of semiconductor IC wafers 18 can be disposed on a single wide range of flexible films. The entire flexible film can be transported to a device for cutting individual COF-type semiconductor packages 1 before cutting each individual COF-type semiconductor package 1 from a wide range of flexible films. However, it is impossible to transport the entire wide range of flexible films. That is, it may be necessary to wind the flexible film into a roll. The flexible film can be unrolled after the wound flexible film is delivered to a suitable device, and then the individual COF-type semiconductor package 1 can be cut from the flexible film. However, as indicated by the arrow in Fig. 3, when the flexible film is repeatedly wound and unfolded, a force is concentrated on the edge of the heating pad 20, as indicated by "A" in Fig. 1. These effects may cause the corners of the heating pad 20 to separate from the flexible film.

在如圖4所說明之實施例中,加熱墊20A之拐角可為楔形的或斜面的。舉例而言,拐角可為斜切面(chamfer cut)狀。在拐角為楔形的情況下,可實質上減小上述對於加熱墊20A之拐角所產生的作用力。如自圖4可見,由箭頭所代表的作用力可因斜面拐角而減小。因此,即使在輸送至切割裝置之前纏繞了可撓薄膜11,加熱墊20A亦可能保持附著至可撓薄膜11之下部絕緣層10。 In the embodiment illustrated in Figure 4, the corners of the heating pad 20A can be wedge-shaped or beveled. For example, the corners can be chamfer cut. In the case where the corner is wedge-shaped, the above-described force generated for the corner of the heating pad 20A can be substantially reduced. As can be seen from Figure 4, the force represented by the arrow can be reduced by the bevel corner. Therefore, even if the flexible film 11 is wound before being conveyed to the cutting device, the heating pad 20A may remain attached to the insulating layer 10 under the flexible film 11.

在如圖5所說明之另一實施例中,加熱墊20B之拐角可為楔形的,但並非為斜切面,拐角可為磨圓的。因此,如自圖5可見,如同箭頭所代表之作用力可因磨圓拐角而減小。因此,即使可撓薄膜11經纏繞以輸送至切割裝置,加熱墊20B亦可能保持附著至可撓薄膜11之下部絕緣層10。 In another embodiment as illustrated in Figure 5, the corners of the heating pad 20B may be wedge shaped, but not beveled, and the corners may be rounded. Therefore, as can be seen from Figure 5, the force as represented by the arrow can be reduced by rounding the corners. Therefore, even if the flexible film 11 is wound to be conveyed to the cutting device, the heating pad 20B may remain attached to the insulating layer 10 under the flexible film 11.

圖2為根據另一實施例之具有加熱墊20之COF式半導體封裝1的橫截面圖。參看圖2,COF式半導體封裝1可包括安置於可撓薄膜11上之半導體IC晶片18。可撓薄膜11可包括下部絕緣層10、引線層12及/或表面絕緣層14。舉例而言,下部絕緣層10可能為聚醯亞胺,引線層12可能為銅,且表面絕緣層14可能為表面抗蝕劑層。半導體IC晶片18可附著於引線層12之暴露部分上。在半導體IC晶片18周圍的區中,可提供底部填料16以加固半導體IC晶片18與可撓薄膜11。舉例而言,異方性導電薄膜(Anisotropic Conductive Film,ACF)或非導電糊狀物 (Non-Conductive Paste,NCP)可用作底部填料16。 2 is a cross-sectional view of a COF-type semiconductor package 1 having a heater pad 20 in accordance with another embodiment. Referring to FIG. 2, the COF type semiconductor package 1 may include a semiconductor IC wafer 18 disposed on the flexible film 11. The flexible film 11 may include a lower insulating layer 10, a wiring layer 12, and/or a surface insulating layer 14. For example, the lower insulating layer 10 may be polyimide, the lead layer 12 may be copper, and the surface insulating layer 14 may be a surface resist layer. The semiconductor IC wafer 18 can be attached to the exposed portion of the lead layer 12. In the region around the semiconductor IC wafer 18, an underfill 16 may be provided to reinforce the semiconductor IC wafer 18 and the flexible film 11. For example, an anisotropic conductive film (ACF) or a non-conductive paste (Non-Conductive Paste, NCP) can be used as the underfill 16 .

與圖1之實施例不同,加熱墊20可安置於半導體IC晶片18上。為了增進抗熱性,黏結層21可安置於加熱墊20與IC晶片18之間。黏結層21可能包括具傳導能力的顆粒,例如,金屬顆粒及/或金屬球,如在圖1中所示。 Unlike the embodiment of FIG. 1, the heater pad 20 can be disposed on the semiconductor IC wafer 18. In order to improve heat resistance, the bonding layer 21 may be disposed between the heating pad 20 and the IC wafer 18. The bonding layer 21 may include conductive particles, such as metal particles and/or metal balls, as shown in FIG.

如上所述,具有多個半導體IC晶片18之可撓薄膜可纏繞成捲並輸送至適當切割裝置。當重複地纏繞並展開可撓薄膜時,作用力可能集中於如圖2所說明之“B”與“C”處之加熱墊20上。“B”與“C”處之作用力可造成加熱墊20剝離半導體IC晶片10或在此等位置撕裂。 As noted above, a flexible film having a plurality of semiconductor IC wafers 18 can be wound into a roll and transported to a suitable cutting device. When the flexible film is repeatedly wound and unfolded, the force may be concentrated on the heating pad 20 at "B" and "C" as illustrated in FIG. The force at "B" and "C" can cause the heating pad 20 to peel off the semiconductor IC wafer 10 or tear at such locations.

如圖6A與圖6B所說明,為了減小“B”處之應力,加熱墊20C與20D可分別包括狹槽52A與52B。狹槽52A、52B可對應於位於半導體IC晶片18上之加熱墊的拐角20C與20D。狹槽52A、52B可能為加熱墊20C與20D中的嚙合的凹口(indented notch)。狹槽52A、52B可能為各種形狀與大小。如圖6A所說明,狹槽52A可為“L”形狀。如圖6B所說明,狹槽52B可為在拐角具有圓形之“L”形狀。 As illustrated in Figures 6A and 6B, in order to reduce the stress at "B", the heating pads 20C and 20D may include slots 52A and 52B, respectively. The slots 52A, 52B may correspond to the corners 20C and 20D of the heating pads located on the semiconductor IC wafer 18. The slots 52A, 52B may be indented notches in the heating pads 20C and 20D. The slots 52A, 52B may be of various shapes and sizes. As illustrated in Figure 6A, the slot 52A can be "L" shaped. As illustrated in Figure 6B, the slot 52B can be in the shape of an "L" having a rounded corner.

在圖7A與圖7B所說明之其他實施例中,個別地,具有斜面拐角的加熱墊20A可具有狹槽52A,或具有斜面拐角之加熱墊20A可具有狹槽52B。在圖8A與圖8B所說明之其他實施例中,個別地,具有磨圓拐角的加熱墊20B可具有狹槽52A,或具有磨圓拐角之加熱墊20B可具有狹槽52B。諸如在圖7至圖8中所說明之實施例的實施例可減 小如圖2所說明的在“B”與“C”處之作用力。一般熟習此項技藝者應瞭解加熱墊及/或狹槽在其他實施例中可為其他形狀與大小。 In other embodiments illustrated in Figures 7A and 7B, individually, the heating pad 20A having a beveled corner may have a slot 52A, or the heating pad 20A having a beveled corner may have a slot 52B. In other embodiments illustrated in Figures 8A and 8B, individually, the heating pad 20B having rounded corners may have slots 52A, or the heating pad 20B having rounded corners may have slots 52B. Embodiments such as the embodiments illustrated in Figures 7-8 may be reduced The force at "B" and "C" as illustrated in Figure 2 is small. It will be appreciated by those skilled in the art that the heating mat and/or slot can be of other shapes and sizes in other embodiments.

圖9至圖10說明其他實施例。參看圖10,COP式半導體封裝1可連接至顯示面板(display panel board)26。顯示面板26可能為LCD面板。 9 through 10 illustrate other embodiments. Referring to FIG. 10, the COP type semiconductor package 1 can be connected to a display panel board 26. Display panel 26 may be an LCD panel.

如圖10所說明,COF式半導體封裝1可包括安置於可撓薄膜11上之半導體IC晶片18。可撓薄膜11可包括:下部絕緣層10;引線層12;及/或表面絕緣層14。舉例而言,下部絕緣層10可能為聚醯亞胺,引線層12可能為銅,且表面絕緣層14可能為表面抗蝕劑層。 As illustrated in FIG. 10, the COF-type semiconductor package 1 may include a semiconductor IC wafer 18 disposed on the flexible film 11. The flexible film 11 may include: a lower insulating layer 10; a wiring layer 12; and/or a surface insulating layer 14. For example, the lower insulating layer 10 may be polyimide, the lead layer 12 may be copper, and the surface insulating layer 14 may be a surface resist layer.

在半導體IC晶片18與可撓薄膜11之間的區中,可提供底部填料16以加固半導體IC晶片18與可撓薄膜11。 In the region between the semiconductor IC wafer 18 and the flexible film 11, an underfill 16 may be provided to reinforce the semiconductor IC wafer 18 and the flexible film 11.

加熱墊20可藉由黏結層21附著至可撓薄膜11之下部絕緣層10。自半導體IC晶片18產生之熱可在穿過底部填料16、引線層12及下部絕緣層10之後,由加熱墊20發散。為了增加抗熱性,黏結層21可安置於加熱墊20與下部絕緣層10之間。黏結層21可能包括具傳導能力的材料,例如,金屬顆粒及/或金屬球。 The heating pad 20 can be attached to the insulating layer 10 under the flexible film 11 by the adhesive layer 21. The heat generated from the semiconductor IC wafer 18 may be dissipated by the heating pad 20 after passing through the underfill 16, the wiring layer 12, and the lower insulating layer 10. In order to increase heat resistance, the adhesive layer 21 may be disposed between the heating pad 20 and the lower insulating layer 10. The bonding layer 21 may include a conductive material such as metal particles and/or metal balls.

當COF式半導體封裝1經由黏結部件24附著至顯示面板26時,加熱墊20可在“D”處彎曲。加熱墊20之彎曲可能在“D”處造成的作用力,其可造成加熱墊20與可撓薄膜11之下部絕緣層10分離,或與黏結層21分離。 When the COF-type semiconductor package 1 is attached to the display panel 26 via the bonding member 24, the heating pad 20 can be bent at "D". The bending of the heating pad 20 may cause a force at "D" which may cause the heating pad 20 to be separated from the insulating layer 10 below the flexible film 11, or separate from the bonding layer 21.

為了減小“D”處應力,加熱墊20可包括狹槽82。狹 槽82A可完全安置於加熱墊20C內(如圖9A所說明),或狹槽82B可為安置於邊緣(例如,彼此相反之邊緣)之凹口(如圖9B所說明)。一般熟習此項技藝者應瞭解狹槽之形狀、大小以及位置可預期在實施例之範疇內。 To reduce stress at "D", the heating pad 20 can include a slot 82. narrow The slots 82A can be completely disposed within the heating pad 20C (as illustrated in Figure 9A), or the slots 82B can be recesses (as illustrated in Figure 9B) disposed at the edges (e.g., opposite edges). It will be appreciated by those skilled in the art that the shape, size and location of the slots are contemplated within the scope of the embodiments.

圖11為根據其他實施例之COF式半導體封裝1之剖視圖。與圖1相比較,下部加強部件120可經由黏結劑121附著於圖1之下部加熱墊20上。省略與圖1相同之元件之詳細描述。 11 is a cross-sectional view of a COF-type semiconductor package 1 in accordance with other embodiments. Compared to FIG. 1, the lower reinforcing member 120 can be attached to the lower heating pad 20 of FIG. 1 via the adhesive 121. Detailed descriptions of the same elements as in Fig. 1 are omitted.

參看圖11,可在下部加熱墊20上形成下部加強部件120以使用黏結劑121來改良其黏附性。如圖11所示,一部分的下部加強部件120可覆蓋於下部加熱墊20。而另一部分的下部加強部件120可延伸並黏附至可撓薄膜11之下表面。下部加強部件120之寬度可大於下部加熱墊20之寬度而足以充分覆蓋下部加熱墊20,進而加強黏附性。 Referring to Fig. 11, a lower reinforcing member 120 may be formed on the lower heating pad 20 to improve the adhesion thereof using the adhesive 121. As shown in FIG. 11, a portion of the lower reinforcement member 120 can cover the lower heating pad 20. The other portion of the lower reinforcing member 120 can be extended and adhered to the lower surface of the flexible film 11. The width of the lower reinforcing member 120 may be greater than the width of the lower heating pad 20 to sufficiently cover the lower heating pad 20, thereby enhancing adhesion.

下部加強部件120可能由可撓薄膜製成,例如,以聚醯亞胺為主體之可撓薄膜。所使用之黏結劑121可與安置於加熱墊20與可撓薄膜11之間的黏結劑21相同。舉例而言,以丙烯酸為主體的黏結材料可當作黏結劑121。黏結劑121可能包括較小大小之金屬顆粒或金屬球之具傳導能力的顆粒,例如,其中之鋁顆粒或球。 The lower reinforcing member 120 may be made of a flexible film, for example, a flexible film mainly composed of polyimide. The adhesive 121 used may be the same as the adhesive 21 disposed between the heating pad 20 and the flexible film 11. For example, an acrylic-based bonding material can be used as the bonding agent 121. The binder 121 may include particles of a smaller size or a conductive particle of a metal ball, for example, aluminum particles or balls therein.

在其他實施例中,下部加強部件120可能由能夠減小光反射的不透明材料或有色材料製成以促進在外部引線接合(Outer Lead Bonding,OLB)製程中影像識別度。 In other embodiments, the lower reinforcement member 120 may be made of an opaque or colored material that reduces light reflection to facilitate image recognition in an Outer Lead Bonding (OLB) process.

圖12為根據其他實施例之COF式半導體封裝1之剖 視圖。與圖2相比較,上部加強部件122可經由黏結劑121附著於上部加熱墊22上,類似於圖2。省略與圖2相同之元件之詳細描述。 FIG. 12 is a cross-sectional view of a COF semiconductor package 1 according to other embodiments. view. Compared to FIG. 2, the upper reinforcing member 122 can be attached to the upper heating pad 22 via the adhesive 121, similar to FIG. A detailed description of the same elements as in FIG. 2 is omitted.

參看圖12,可在上部加熱墊22上形成上部加強部件122以使用黏結劑121來增進其黏附性。如圖12所示,一部分的上部加強部件122可覆蓋上部加熱墊22而另一部分的加強部件122可延伸並黏附至可撓薄膜11之上表面,也就是黏附至表面絕緣層14之表面。加強部件122之寬度可大於上部加熱墊22之寬度而足以覆蓋上部加熱墊22,進而增加黏附性。 Referring to Fig. 12, an upper reinforcing member 122 may be formed on the upper heating pad 22 to use the adhesive 121 to enhance its adhesion. As shown in FIG. 12, a portion of the upper reinforcing member 122 may cover the upper heating pad 22 and another portion of the reinforcing member 122 may extend and adhere to the upper surface of the flexible film 11, that is, adhere to the surface of the surface insulating layer 14. The width of the reinforcing member 122 can be greater than the width of the upper heating pad 22 to cover the upper heating pad 22, thereby increasing adhesion.

上部加強部件122可能由可撓薄膜製成,例如,以聚醯亞胺為主體之可撓薄膜。而可能使用與安置於加熱墊22與可撓薄膜11之間的黏結劑21相同的黏結劑121。舉例而言,以丙烯酸為主體之黏結材料可能用作黏結劑121。黏結劑121可能包括具傳導能力材質的金屬顆粒或較小的金屬球,例如,其中之鋁顆粒或球。 The upper reinforcing member 122 may be made of a flexible film, for example, a flexible film mainly composed of polyimide. It is possible to use the same adhesive 121 as the adhesive 21 disposed between the heating pad 22 and the flexible film 11. For example, a bonding material mainly composed of acrylic acid may be used as the bonding agent 121. The binder 121 may include metal particles of a conductive material or smaller metal balls, such as aluminum particles or balls therein.

上部加強部件122可能由能夠減小光之反射的不透明材料或有色材料製成以增進在外部引線接合(OLB)製程中影像識別度。 The upper stiffening member 122 may be made of an opaque or colored material that reduces the reflection of light to enhance image recognition in an external wire bonding (OLB) process.

前文描述可為實施例之說明但不受限於實施例。儘管已描述實施例,但熟習此項技藝者應瞭解在本質上不偏離實施例的精神,在新穎教示與態樣下所進行的許多修改是可能的。舉例而言,加熱墊20可同時在可撓薄膜11下方與上方形成,且加強部件120與122亦可同時在可撓薄膜 11下方與上方形成。因此,所有此等修改皆意欲包括於隨附申請專利範圍之範疇內。 The foregoing description may be illustrative of the embodiments but not limited to the embodiments. While the embodiment has been described, it will be understood by those skilled in the art that many modifications may be made in the novel teachings and embodiments without departing from the spirit of the embodiments. For example, the heating pad 20 can be formed under and above the flexible film 11 at the same time, and the reinforcing members 120 and 122 can also be simultaneously in the flexible film. 11 is formed below and above. Accordingly, all such modifications are intended to be included within the scope of the appended claims.

1‧‧‧可撓印刷電路板上晶片(COF)式半導體封裝 1‧‧‧Flexible Printed Circuit Board (COF) semiconductor package

10‧‧‧下部絕緣層 10‧‧‧Lower insulation

11‧‧‧可撓薄膜 11‧‧‧Flexible film

12‧‧‧引線層 12‧‧‧ lead layer

14‧‧‧表面絕緣層 14‧‧‧Surface insulation

16‧‧‧底部填料 16‧‧‧Bottom packing

18‧‧‧半導體IC晶片 18‧‧‧Semiconductor IC chip

20‧‧‧加熱墊 20‧‧‧heating mat

20A‧‧‧加熱墊 20A‧‧‧heating mat

20B‧‧‧加熱墊 20B‧‧・heating mat

20C‧‧‧加熱墊 20C‧‧‧heating mat

20D‧‧‧加熱墊 20D‧‧‧heating mat

21‧‧‧黏結層 21‧‧‧Bonded layer

22‧‧‧上部加熱墊 22‧‧‧Upper heating mat

24‧‧‧黏結部件 24‧‧‧bonded parts

26‧‧‧顯示面板 26‧‧‧ display panel

52A‧‧‧狹槽 52A‧‧ slot

52B‧‧‧狹槽 52B‧‧‧ slot

82‧‧‧狹槽 82‧‧‧ slot

82A‧‧‧狹槽 82A‧‧ slot

82B‧‧‧狹槽 82B‧‧‧ slot

120‧‧‧下部加強部件 120‧‧‧ Lower reinforcement parts

121‧‧‧黏結劑 121‧‧‧Adhesive

122‧‧‧上部加強部件 122‧‧‧Upper reinforcement

實施例之上述特徵及其他特徵參看附圖藉由其詳細描述可能變得顯而易見。 The above-described features and other features of the embodiments may be apparent from the following detailed description.

圖1為根據實施例之具有加熱墊之COF式半導體封裝的橫截面圖。 1 is a cross-sectional view of a COF-type semiconductor package with a heater pad in accordance with an embodiment.

圖2為根據另一實施例之具有加熱墊之COF式半導體封裝的橫截面圖。 2 is a cross-sectional view of a COF-type semiconductor package with a heater pad in accordance with another embodiment.

圖3至圖5為根據實施例之加熱墊之示意圖。 3 to 5 are schematic views of a heating pad according to an embodiment.

圖6A至圖8B為根據實施例之具有狹槽之加熱墊的示意圖。 6A-8B are schematic illustrations of a heated pad having a slot, in accordance with an embodiment.

圖9A與圖9B為根據其他實施例之具有狹槽之加熱墊的示意圖。 9A and 9B are schematic views of a heated pad having a slot in accordance with other embodiments.

圖10為根據實施例之附著至顯示面板之COF式半導體封裝的示意圖。 10 is a schematic diagram of a COF-type semiconductor package attached to a display panel, in accordance with an embodiment.

圖11為根據實施例之具有黏附至圖1之加熱墊的加強部件之COF式半導體封裝的橫截面圖。 11 is a cross-sectional view of a COF-type semiconductor package having a stiffening feature adhered to the heating pad of FIG. 1 in accordance with an embodiment.

圖12為根據實施例之具有黏附至圖2之加熱墊的加強部件之COF式半導體封裝之橫截面圖。 12 is a cross-sectional view of a COF-type semiconductor package having a stiffening feature adhered to the heating pad of FIG. 2, in accordance with an embodiment.

1‧‧‧可撓印刷電路板上晶片(COF)式半導體封裝 1‧‧‧Flexible Printed Circuit Board (COF) semiconductor package

10‧‧‧下部絕緣層 10‧‧‧Lower insulation

11‧‧‧可撓薄膜 11‧‧‧Flexible film

12‧‧‧引線層 12‧‧‧ lead layer

14‧‧‧表面絕緣層 14‧‧‧Surface insulation

16‧‧‧底部填料 16‧‧‧Bottom packing

18‧‧‧半導體IC晶片 18‧‧‧Semiconductor IC chip

20‧‧‧加熱墊 20‧‧‧heating mat

21‧‧‧黏結層 21‧‧‧Bonded layer

Claims (31)

一種可撓印刷電路板上晶片(COF)式半導體封裝,其包含:可撓薄膜;半導體IC晶片,位於該可撓薄膜上;加熱墊,位於該可撓薄膜上;以及在該加熱墊上之加強部件,其中該加熱墊位於該半導體IC晶片與該加強部件之間。 A flexible printed circuit board (COF) type semiconductor package comprising: a flexible film; a semiconductor IC chip on the flexible film; a heating pad on the flexible film; and reinforcement on the heating pad A component, wherein the heating pad is between the semiconductor IC wafer and the reinforcing member. 如申請專利範圍第1項所述之可撓印刷電路板上晶片(COF)式半導體封裝,其中該加熱墊的形狀為矩形且該加熱墊之拐角為斜面的。 The flexible printed circuit board (COF) type semiconductor package of claim 1, wherein the heating pad has a rectangular shape and a corner of the heating pad is beveled. 如申請專利範圍第1項所述之可撓印刷電路板上晶片(COF)式半導體封裝,其中該加熱墊的形狀為矩形且該加熱墊之拐角為磨圓的。 The flexible printed circuit board (COF) type semiconductor package of claim 1, wherein the heating pad has a rectangular shape and the corner of the heating pad is rounded. 如申請專利範圍第1項所述之可撓印刷電路板上晶片(COF)式半導體封裝,其中還包含位於該加熱墊與該可撓薄膜間的黏結層。 The flexible printed circuit board (COF) type semiconductor package of claim 1, further comprising a bonding layer between the heating pad and the flexible film. 如申請專利範圍第4項所述之可撓印刷電路板上晶片(COF)式半導體封裝,其中該黏結層包括金屬顆粒。 The flexible printed circuit board (COF) type semiconductor package of claim 4, wherein the bonding layer comprises metal particles. 如申請專利範圍第1項所述之可撓印刷電路板上晶片(COF)式半導體封裝,其中該可撓薄膜包括下部絕緣層、引線層以及表面絕緣層。 The flexible printed circuit board (COF) type semiconductor package of claim 1, wherein the flexible film comprises a lower insulating layer, a wiring layer, and a surface insulating layer. 如申請專利範圍第6項所述之可撓印刷電路板上晶片(COF)式半導體封裝,其中該下部絕緣層包括聚醯亞 胺,該引線層包括銅,而該表面絕緣層包括表面抗蝕劑層。 The flexible printed circuit board (COF) type semiconductor package of claim 6, wherein the lower insulating layer comprises a polysilicon The amine, the lead layer comprises copper, and the surface insulating layer comprises a surface resist layer. 如申請專利範圍第6項所述之可撓印刷電路板上晶片(COF)式半導體封裝,其中該加熱墊之傳導性高於該下部絕緣層之傳導性。 The flexible printed circuit board (COF) type semiconductor package of claim 6, wherein the heating pad is more conductive than the lower insulating layer. 如申請專利範圍第1項所述之可撓印刷電路板上晶片(COF)式半導體封裝,其中該加熱墊位於該半導體IC晶片與該可撓薄膜上,且該加熱墊包括對應於該半導體IC晶片之拐角邊緣的狹槽。 The flexible printed circuit board (COF) type semiconductor package of claim 1, wherein the heating pad is located on the semiconductor IC chip and the flexible film, and the heating pad comprises a semiconductor IC corresponding to the semiconductor IC A slot at the corner edge of the wafer. 如申請專利範圍第9項所述之可撓印刷電路板上晶片(COF)式半導體封裝,其中該狹槽具有“L”形狀。 The flexible printed circuit board (COF) type semiconductor package of claim 9, wherein the slot has an "L" shape. 如申請專利範圍第9項所述之可撓印刷電路板上晶片(COF)式半導體封裝,其中該加熱墊之形狀為矩形且該加熱墊之拐角為斜面的。 The flexible printed circuit board (COF) type semiconductor package of claim 9, wherein the heating pad has a rectangular shape and a corner of the heating pad is beveled. 如申請專利範圍第9項所述之可撓印刷電路板上晶片(COF)式半導體封裝,其中該加熱墊之形狀為矩形且該加熱墊之拐角為磨圓的。 The flexible printed circuit board (COF) type semiconductor package of claim 9, wherein the heating pad has a rectangular shape and the corner of the heating pad is rounded. 如申請專利範圍第9項所述之可撓印刷電路板上晶片(COF)式半導體封裝,還包含位於該加熱墊與該半導體IC晶片之間的黏結層。 The flexible printed circuit board (COF) semiconductor package of claim 9, further comprising a bonding layer between the heating pad and the semiconductor IC wafer. 如申請專利範圍第1項所述之可撓印刷電路板上晶片(COF)式半導體封裝,其中該加熱墊包括對應於該半導體IC晶片之拐角邊緣的第一狹槽。 The flexible printed circuit board (COF) type semiconductor package of claim 1, wherein the heating pad comprises a first slot corresponding to a corner edge of the semiconductor IC chip. 如申請專利範圍第14項所述之可撓印刷電路板上晶片(COF)式半導體封裝,其中該第一狹槽位於該加熱 墊之邊界內。 The flexible printed circuit board (COF) type semiconductor package of claim 14, wherein the first slot is located in the heating Within the boundaries of the mat. 如申請專利範圍第14項所述之可撓印刷電路板上晶片(COF)式半導體封裝,其中該第一狹槽位於該加熱墊之邊界處。 The flexible printed circuit board (COF) type semiconductor package of claim 14, wherein the first slot is located at a boundary of the heating pad. 如申請專利範圍第14項所述之可撓印刷電路板上晶片(COF)式半導體封裝,其中該加熱墊在該半導體IC晶片上,且該加熱墊包括對應於所述半導體IC晶片之拐角邊緣之第二狹槽。 The flexible printed circuit board (COF) type semiconductor package of claim 14, wherein the heating pad is on the semiconductor IC wafer, and the heating pad comprises a corner edge corresponding to the semiconductor IC chip. The second slot. 如申請專利範圍第14項所述之可撓印刷電路板上晶片(COF)式半導體封裝,其中該加熱墊之形狀為矩形且該加熱墊之拐角為斜面的。 The flexible printed circuit board (COF) type semiconductor package of claim 14, wherein the heating pad has a rectangular shape and a corner of the heating pad is beveled. 如申請專利範圍第14項所述之可撓印刷電路板上晶片(COF)式半導體封裝,其中該加熱墊之形狀為矩形且該加熱墊之拐角為磨圓的。 The flexible printed circuit board (COF) type semiconductor package of claim 14, wherein the heating pad has a rectangular shape and the corner of the heating pad is rounded. 如申請專利範圍第1項所述之可撓印刷電路板上晶片(COF)式半導體封裝,其中該加熱墊是由包含鋁之金屬材料製成。 The flexible printed circuit board (COF) type semiconductor package of claim 1, wherein the heating pad is made of a metal material containing aluminum. 如申請專利範圍第1項所述之可撓印刷電路板上晶片(COF)式半導體封裝,其中部分該加強部件覆蓋該加熱墊,且另一部分該加強部件延伸且位於該可撓薄膜上。 The flexible printed circuit board (COF) type semiconductor package of claim 1, wherein a portion of the reinforcing member covers the heating pad, and another portion of the reinforcing member extends over the flexible film. 如申請專利範圍第1項所述之可撓印刷電路板上晶片(COF)式半導體封裝,其中該加強部件是由以聚醯亞胺為主體所構成之可撓薄膜。 The flexible printed circuit board (COF) type semiconductor package according to claim 1, wherein the reinforcing member is a flexible film mainly composed of polyimide. 如申請專利範圍第1項所述之可撓印刷電路板上 晶片(COF)式半導體封裝,其中該加強部件是由不透明材料製成。 The flexible printed circuit board as described in claim 1 A wafer (COF) type semiconductor package in which the reinforcing member is made of an opaque material. 如申請專利範圍第1項所述之可撓印刷電路板上晶片(COF)式半導體封裝,其中該加強部件是由有色材料製成。 The flexible printed circuit board (COF) type semiconductor package of claim 1, wherein the reinforcing member is made of a colored material. 如申請專利範圍第1項所述之可撓印刷電路板上晶片(COF)式半導體封裝,其中還包含黏結層,該黏結層包括位於該加強部件與該加熱墊之間以及在該加強部件與該可撓薄膜之間的金屬顆粒。 The flexible printed circuit board (COF) type semiconductor package of claim 1, further comprising a bonding layer, the bonding layer being disposed between the reinforcing member and the heating pad, and between the reinforcing member and the reinforcing member Metal particles between the flexible films. 如申請專利範圍第9項所述之可撓印刷電路板上晶片(COF)式半導體封裝,其中部分該加強部件覆蓋該加熱墊,而另一部分該加強部件則延伸且在位於該可撓薄膜上。 The flexible printed circuit board (COF) type semiconductor package of claim 9, wherein a portion of the reinforcing member covers the heating pad, and another portion of the reinforcing member extends and is located on the flexible film. . 如申請專利範圍第9項所述之可撓印刷電路板上晶片(COF)式半導體封裝,其中該加強部件包含以聚醯亞胺為主體的可撓薄膜製成。 The flexible printed circuit board (COF) type semiconductor package of claim 9, wherein the reinforcing member comprises a flexible film mainly composed of polyimide. 如申請專利範圍第9項所述之可撓印刷電路板上晶片(COF)式半導體封裝,其中該加強部件是由不透明材料製成。 The flexible printed circuit board (COF) type semiconductor package of claim 9, wherein the reinforcing member is made of an opaque material. 如申請專利範圍第9項所述之可撓印刷電路板上晶片(COF)式半導體封裝,其中該加強部件是由有色材料製成。 The flexible printed circuit board (COF) type semiconductor package of claim 9, wherein the reinforcing member is made of a colored material. 如申請專利範圍第9項所述之可撓印刷電路板上晶片(COF)式半導體封裝,其中還包含黏結層,該黏結 層包括在該加強部件與該加熱墊之間以及在該加強部件與該可撓薄膜之間的金屬顆粒。 The flexible printed circuit board (COF) type semiconductor package of claim 9, further comprising a bonding layer, the bonding The layer includes metal particles between the reinforcing member and the heating pad and between the reinforcing member and the flexible film. 一種顯示面板,其包含:如申請專利範圍第14項所述之COP式半導體封裝,其中該可撓層連接至顯示面板。 A display panel comprising: the COP-type semiconductor package of claim 14, wherein the flexible layer is connected to the display panel.
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