TWI440842B - Detection method and device for in situ monitoring resistance of photosensitive or hydrocarbon-containing thin-film materials upon extreme ultraviolet (euv) irradiation using actinic euv light source - Google Patents

Description

Method and device for measuring extreme ultraviolet radiation resistance of film material with photosensitive or hydrocarbon-containing component by using the same wavelength source

The present invention relates to a method and a device for measuring the radiation resistance of an extepor ultraviolet (EUV) film material of a photosensitive or hydrocarbon-containing component, in particular to an actinic using the same EUV wavelength source. ( in situ ) A method and apparatus for measuring the resistance to extreme ultraviolet radiation of a photosensitive photoresist or a film material containing a hydrocarbon component.

In order to develop semiconductor integrated circuit fabrication technology below 22 nanometers (nm), a light source with a wavelength of 13.5 nm in the extreme ultraviolet (EUV) region is one of the few candidate excitations suitable for next generation semiconductor lithography technology. One of the light sources. In the lithography process, the film-related optical parameters of the photosensitive material such as photoresist or underlayer containing carbon nanotubes usually contain refractive index ( n ) and absorption coefficient. (photo-absorption coefficient σ _abs , or extinction coefficient k ) and thickness ( T ). Therefore, when developing a new EUV type photosensitive photoresist or a film material such as a bottom layer containing a hydrocarbon component, it is necessary to measure the above-mentioned optical parameters related to imaging for light absorption, photochemical dynamic analysis, and imaging of the material. Simulation to assist in the optimal design of the material.

Nowadays, the optical properties ( n , k , T ) of thin film photoresist materials are mostly measured by the X-ray source in an X-ray diffractometer, and the specular reflectivity is measured by X-ray specular reflectance measurement. It means placing the sample on a central axis of rotation in the X-ray diffractometer and rotating at an angle relative to the X-ray incident light, and detecting the X-ray by the light source detector on the circumference of the corresponding reflection angle The reflectance of the reflected light as a function of the angle of rotation of the sample. Commercially available X-ray diffractometer equipment is usually equipped with a set of software, which can simulate the relationship between the obtained X-ray specular reflectance and the sample rotation angle, and use the atomic scattering theory to simulate the X-ray source target wavelength to simulate the film sample. ( n, k, T ) values. The specular reflectance measurement function of the above X-ray diffractometer is limited to the optical parameters used to determine the material of the film material.

Furthermore, another existing method is to use the specular reflectance measurement method of the EUV reflectometer to obtain the optical and structural parameters of the film sample. The existing EUV reflectometer measurement method generally follows the operation of the X-ray diffractometer measurement method. The principle, that is, the optical parameters of the EUV source are still applied according to the atomic scattering theory to obtain the above optical parameters. However, the EUV reflectometer measurement method differs from the X-ray diffractometer measurement method in that the X-ray diffractometer measurement method can be measured in an air-conditioned environment, but all substances including air are absorbed. EUV light, so for the EUV reflectometer measurement method, not only the film sample, but also the EUV light path area of the entire EUV reflectometer, the sample angle axis, the detector and its angular axis group need to be set in a vacuum chamber. Within to avoid measurement errors caused by air caused by EUV reflectors. Furthermore, if the EUV reflectometer is used only for the same measurement function as the X-ray diffractometer, the instrumentation is more expensive and the experimental procedure is more cumbersome because of the need for a vacuum chamber.

On the other hand, in the EUV exposure process of the semiconductor lithography process, the photochemical reaction induced by the EUV light absorption of the photosensitive material such as the photosensitive photoresist or the underlying layer containing the hydrocarbon component may cause a change in the quality and/or thickness of the film material. It is because a part of the EUV photochemical product will become a gassing material and release the photoresist surface. In general, these outgassing materials may adhere to the optical components of the EUV exposure equipment, causing contamination of the equipment, thereby detracting from the capacity and service life of the EUV exposure equipment. Therefore, at present in the development of EUV-type photoresists and underlying materials containing hydrocarbon components, the "anti-EUV radiation" of materials is mostly evaluated by the amount of outgassing particles, and the method of measuring gas-release particles is roughly divided. For the following three types:

(1), thermal desorption tube / gas chromatography - mass spectrometry (thermal desorption tube / GC-MS): to fill the column of adsorbed substances, adsorption of gas released at low temperature (77 ° K), and then The column is moved to the analytical instrument, and is heated and desorbed by buffer gas to be loaded into another gas chromatography column, and the standard sample gas method is internally calibrated or externally calibrated, and the mass spectrometer is qualitatively and quantitatively passed through the EUV. The amount of gas particles released after the radiation reaction is released for evaluation of its anti-EUV radiation.

(2) Pressure-rise method: The pressure ion gauge is used to measure the amount of chamber pressure rise caused by the outgas particles in the vacuum chamber, the pressure rise amount and the pumping efficiency of the chamber. The product of the gas is equal to the gas's outflow flux for evaluation of its anti-EUV radiation.

(3) Quadrupole mass spectrometry: The linear relationship between the particle size and the mass spectrometry signal is calibrated by a standard sample gas, and the mass of the gas particles released by the EUV radiation reaction is quantified and quantified by the mass spectrometer. For evaluation of its anti-EUV radiation.

However, all of the above three methods of gas release particle measurement are qualitative and/or quantitative analysis of the released gas particles on the surface, but the optical parameters ( n , k , T ) and the film of the film sample itself cannot be known at the same time. The evolution of these optical parameters during light exposure. The optical parameters of these thin film materials are necessary parameters for determining lithography process imaging, and the anti-EUV radiation of the film is also an important index for evaluating the damage of optical components caused by newly developed photoresist or underlying film materials. However, for material developers, one of the three outgassing particle measurement methods described above is used to evaluate the anti-EUV radiation properties of the amount of outgassing particles. To understand the effect of EUV radiation on the optical parameters of the film, although theoretically X-ray diffractometry or EUV reflectometry can be used to obtain the optical parameters of the exposed film material, so far, and There is no relevant research report, which obviously will cause the complexity of the operation steps of the material experiment and the integration of the machine.

In view of the above problems in the prior art, the inventor of the present invention filed the Republic of China application No. 099127764 on August 19, 2010. "Using the same wavelength source to monitor the photosensitive material or the hydrocarbon material containing the hydrocarbon component. Radiation measurement method" invention patent application, which provides a measurement method suitable for direct application in an existing EUV reflectometer device, but because of the relatively limited architecture of the existing EUV reflectometer, the measurement method is made each time A film material sample used can only form an overexposed area, so that each film material sample can only be used to measure the initial and overexposed n, k, T values of the single overexposed area and the on-site monitoring n value. The change in the cumulative exposure. Therefore, in order to carry out the measurement work of several experimental groups with the same or different overexposure levels according to the experimental requirements, the existing EUV reflectometer should be repeatedly vacuumed and the sample of the previous film material should be taken out and placed in the next step. Sample the film material and re-vacuum. As a result, it will be relatively unfavorable to perform multiple measurement operations quickly, and the background parameter conditions may be changed after each vacuum pumping, which is not conducive to eliminating the background parameter variation, so as to ensure measurement of several film materials. The accuracy and conditional consistency of the optical parameters at the time of the sample.

Therefore, in order to provide a more accurate and comprehensive evaluation of the anti-EUV radiation of the film material, the inventor of the present invention further provides an anti-EUV radiation using a film material such as a photosensitive layer and a bottom layer containing a hydrocarbon component at the same wavelength source. Scaling methods and devices to overcome the measurement technology bottleneck caused by the architecture of existing EUV reflectors.

The main object of the present invention is to provide a measuring method and apparatus for monitoring the extreme ultraviolet (EUV) radiation of a photosensitive or hydrocarbon-containing film material by using the same wavelength source in situ . A set of three-dimensional coordinate moving mechanism is additionally installed in the vacuum chamber system of the EUV light source, so that several side-by-side overexposed areas can be formed by using different surface areas of the same film material sample in the same vacuum working process. To achieve on-site monitoring under the conditions of the wavelength of the EUV source, and to derive the array optical parameter values of the exposed regions of the same film material sample under initial, general or overexposure exposure conditions (n, k , T), so the evaluation of the anti-EUV radiation of such film material samples can be completed relatively quickly and accurately, so it is indeed beneficial to simplify the measurement process of the photosensitive film material, improve its measurement accuracy and reduce its measurement cost.

A secondary object of the present invention is to provide a method and a device for measuring the ultraviolet radiation resistance of a photosensitive material or a hydrocarbon-containing film material by using the same wavelength source, wherein the exposure region of the film material sample can be selected. EUV specular reflectance measurement for post-exposure delay (ie, specular reflectance is measured every time an exposure area is formed) or EUV specular reflectance after a faster post-exposure delay The measurement method (that is, first forming a plurality of exposure regions, and then measuring each specular reflectance one by one), so that the measurement method and device can flexibly adjust the measurement process according to the material properties of the film material sample or the experimental requirements, It is indeed advantageous to increase the measurement flexibility of the measurement method and device and the ease of operation.

In order to achieve the above object, the present invention provides a method for measuring the anti-EUV light radiation property of a photosensitive material or a hydrocarbon-containing film material by using the same wavelength light source, which comprises the following steps:

(A) placing a film material sample on a first sample support of a set of three-dimensional moving mechanisms in a vacuum chamber system, and evacuating the vacuum chamber system;

(B) moving the film material sample to an exposure space in an X-axis direction by one of the three-dimensional moving mechanism X-axis driving unit;

(C) moving the film material sample in a Y-axis direction by one of the three-dimensional moving mechanism Y-axis horse-moving unit, such that an exposed area of the film material sample is aligned to an EUV light source;

(D) moving the film material sample in a Z-axis direction by one of the three-dimensional moving mechanism Z-axis driving unit, so that the EUV light source is irradiated to the other end from one end of the exposed area along the Z-axis direction to accumulate Exposure amount

(E) moving the film material sample along the X-axis direction to a measurement space by the X-axis driving unit, and performing EUV specular reflectance measurement on the exposed region of the film material sample;

(F), the specular reflectance and the curve thereof are obtained by the above EUV specular reflectance measurement method, thereby converting the optical parameter variation of the film material sample to evaluate the anti-EUV radiation property of the film material sample.

In an embodiment of the invention, in step (E), a post-exposure delay EUV specular reflectance measurement (E1) is selected for the exposed area of the film material sample or is fast. Delay EUV specular reflectance measurement (E2) after illumination.

In an embodiment of the invention, the step (E1) of the EUV specular reflectance measurement method after the illumination is not included: (E1-1), the exposure area of the film material sample is extremely low by using the EUV light source. The specular reflectance measurement of the dose at the wavelength of the EUV source; (E1-2), moving the three-dimensional moving mechanism back to the exposure space, and substantially the same steps (B) to (D) in the film material Another exposure region is formed on the sample; (E1-3), EUV specular reflectance measurement (E1) for the next unexposed delay of the exposed region of the film material sample; and (E1-4) , choose to repeat or not repeat steps (E1-2) and (E1-3).

In an embodiment of the invention, the step (E2) of the post-illumination EUV specular reflectance measurement method comprises: (E2-1), moving the three-dimensional moving mechanism back to the exposure space, and performing substantially the same steps (B) to (D), forming a next exposure region on the film material sample; (E2-2), repeating or not repeating the step (E2-1); and (E2-3), using the The EUV source sequentially measures the specular reflectance of the EUV source wavelength at a very low dose for the plurality of exposure regions of the film material sample.

In an embodiment of the invention, the step (E1-1) or (E2-3) of measuring the specular reflectance of the extremely low dose at the wavelength of the EUV source includes: (1) using the Z-axis driving unit. Moving the film material sample along the Z-axis direction to align a center position of the exposed area to a rotation axis center position of one of the sample rotating shafts of the second sample support frame; (2) using the X-axis driving unit to make the The film material sample moves along the X-axis direction to a measurement space between the sample rotation axis and a detector rotation axis; (3) transferring the film material sample from the first sample support frame of the three-dimensional movement mechanism to a second sample support holder of the sample shaft; (4) moving the three-dimensional moving mechanism away from the measurement space; and (5) using the EUV light source to perform an extremely low dose on the exposed area of the film material sample Specular reflectance measurement of the EUV source wavelength.

In an embodiment of the invention, the step (E1-2) or (E2-1) of moving the three-dimensional moving mechanism back to the exposure space comprises: (i) moving the three-dimensional moving mechanism back into the sample rotating shaft and Measuring space between the detector shafts; (ii) transferring the film material sample from the second sample holder of the sample shaft to the first sample holder of the three-dimensional moving mechanism; and (iii) utilizing The X-axis driving unit moves the film material sample to the exposure space along the X-axis direction.

In one embodiment of the present invention, the film material sample has a film material selected from the group consisting of a photoresist or a hydrocarbon-containing substrate, and the substrate of the film material sample is selected from a wafer, a single wafer, a glass substrate, or Sapphire substrate.

In an embodiment of the invention, the three-dimensional movement mechanism is a set of three-dimensional coordinate step movement mechanisms. The X-axis, Y-axis, and Z-axis drive units are each a stepping motor.

In an embodiment of the invention, the first and/or second sample support is an electrostatic adsorption support. The vacuum chamber of the vacuum chamber system is evacuated to ≦10 ^-7 torr.

In an embodiment of the invention, in step (D), the cumulative exposure amount of the exposure region is controlled by controlling the scanning speed of the Z-axis driving unit. The cumulative exposure amount is between several tens of mJ/cm ² (millijoules per square centimeter) to several tens of J/cm ² (joules per square centimeter). The width of the exposed area is the same as the beam width of the EUV source, and the length of the exposed area is at least 5 times the beam length of the EUV source. The exposure area is selected to accumulate to an initial, normal or overexposed exposure condition.

In an embodiment of the invention, between steps (A) and (B), the θ axis of the sample rotating shaft is set at θ=90°, and the detector rotating shaft is set at 2θ=0.

In an embodiment of the invention, the optical parameter is selected from the group consisting of refractive index ( n ), absorption coefficient (σ _abs or extinction coefficient k ), film thickness ( T ), or a combination thereof.

Furthermore, the present invention provides a measuring device for monitoring the anti-EUV optical radiation of a photosensitive or hydrocarbon-containing film material on the same wavelength source, comprising: a set of three-dimensional moving mechanism, movably disposed in a vacuum In the chamber system, the three-dimensional moving mechanism has: a first sample support frame for supporting a film material sample; and an X-axis driving unit to make the film material sample along an X-axis direction in an exposure space and an amount Moving between the measurement spaces; a Y-axis horse-moving unit moving the film material sample in a Y-axis direction such that one of the plurality of predetermined exposure regions of the film material sample is aligned to an EUV light source; and a Z-axis And a driving unit configured to move the film material sample in a Z-axis direction such that the EUV light source illuminates the aligned exposure region along the Z-axis direction to accumulate an exposure amount.

In an embodiment of the invention, the measurement space of the vacuum chamber system further includes a sample rotating shaft having a second sample support frame, wherein the X-axis driving unit is further configured to use the first sample support frame The film material sample thereon is transferred to the second sample holder.

In an embodiment of the invention, the measurement space of the vacuum chamber system further includes a detector rotating shaft for performing an EUV specular reflectance amount on a predetermined exposure area of the film material sample on the second sample support frame. Measurement.

The above and other objects, features and advantages of the present invention will become more <RTIgt;

Referring to FIG. 1 , a measurement method for monitoring the anti-EUV radiation property of a photosensitive material or a hydrocarbon-containing film material by using the same wavelength light source in the preferred embodiment of the present invention mainly comprises the following steps: (A), a film material sample is placed on a first sample support of a set of three-dimensional moving mechanisms fixed in a vacuum chamber system, and the vacuum chamber system is evacuated; (B) by the three-dimensional moving mechanism An X-axis driving unit moves the film material sample to an exposure space along an X-axis direction; (C) moving the film material sample along a Y-axis direction by one of the three-dimensional moving mechanism Y-axis horse-moving unit Aligning an exposed area of the film material sample to an EUV light source; (D) moving the film material sample in a Z-axis direction by one of the three-dimensional moving mechanism Z-axis driving unit so that the EUV light source is along The Z-axis direction is irradiated to the other end from one end of the exposed area to accumulate the exposure amount; (E), the film material sample is moved to the measurement space along the X-axis direction by the X-axis driving unit, and Exposure of the film material sample The area is subjected to EUV specular reflectance measurement method; and (F), the specular reflectance and the curve are obtained by the above EUV specular reflectance measurement method, thereby converting the optical parameter variation of the film material sample to evaluate the film Anti-EUV radiation of the material sample.

Referring to Figures 1, 2, 3 and 4A, in the preferred embodiment of the present invention, the method for measuring the anti-EUV radiation of a photosensitive material or a hydrocarbon-containing film material by using the same wavelength source is firstly carried out. (A): A film material sample 30 is placed on a first sample holder 21 of a set of three-dimensional moving mechanisms 20 in a vacuum chamber system 10, and the vacuum chamber system 10 is evacuated. In this step, as shown in FIG. 2, it discloses a top view and a partial internal view of the vacuum chamber system 10 for measuring EUV specular reflectance in the XY plane of the present invention, wherein the vacuum chamber system 10 includes a A vacuum chamber 11, a sample rotating shaft 12, a detector rotating shaft 13, and an EUV light source 14. The vacuum chamber 11 provides a vacuum operating environment. The sample rotating shaft 12 is rotatably disposed inside the vacuum chamber 11. If desired, the present invention can optionally provide a second sample holder 121 for carrying the film sample 30, and having a two-dimensional movement of the X/Z axis outside the vacuum chamber 11 in the vacuum chamber system 10. The mechanism 122, the two-dimensional moving mechanism 122 can move the second sample support frame 121 on the upper and lower sides (X-axis) and the fine adjustment movement on the front and rear sides (Z-axis) with respect to the drawing surface to correct the measurement position. However, the two-dimensional moving mechanism 122 is only a selective external fine-tuning mechanism of the vacuum chamber system 10 and has only limited two-dimensional moving capability, and therefore it is not a necessary technical means for implementing the present invention, and is hereby indicated.

Moreover, the detector rotating shaft 13 is rotatably disposed inside the vacuum chamber 11 and has a coaxial arrangement relationship with the sample rotating shaft 12. The detector rotating shaft 13 has an EUV specular reflectance detector 131 (hereinafter referred to as an EUV detector 131) inside the vacuum chamber 11 and, if necessary, the present invention and optionally in the vacuum chamber A Y-axis one-dimensional moving mechanism 132 is disposed outside the eleven, wherein the one-dimensional moving mechanism 132 allows the EUV detector 131 to perform fine-tuning movement on the left and right sides (Y-axis) with respect to the drawing surface to correct the measurement position. However, the one-dimensional moving mechanism 132 is only a selective external fine-tuning mechanism of the vacuum chamber system 10 and has only limited one-dimensional moving capability, and therefore it is not a necessary technical means for implementing the present invention, and is hereby indicated.

As described above, by rotating the sample rotating shaft 12 and/or the detector rotating shaft 13, the present invention can relatively adjust the angle between the EUV light source 14 and the surface of the film material sample 30 (i.e., the angle θ, which can be between And between the surface of the film material sample 30 and the angle between the EUV detectors 131 (i.e., 2 theta angle). Generally, the θ axis of the sample rotating shaft 12 is set at θ=90°, and the detector rotating shaft 13 is set at 2θ=0, so that the film material sample 30 is sampled from the first sample of the three-dimensional moving mechanism 20. The support frame 21 is transferred to the second sample holder 121 of the sample spindle 12. Additionally, the EUV source 14 is positioned generally above the plane of the second sample support 121 of the sample spool 12.

In addition, the film material sample 30 may be an organic polymer photosensitive material (for example, photoresist) or an under-layer material containing a hydrocarbon component, which may be optionally coated on a germanium wafer, a single wafer, a glass substrate or A substrate such as a sapphire substrate. The invention has experimentally measured two kinds of photoresists and 40 kinds of film materials including a bottom layer of a hydrocarbon component, wherein poly(methyl methacrylate) (PMMA) is a photosensitive film with the largest outgas volume and the largest change in film thickness. The material sample may also be measured for a film material such as a round-robin resist (RRR) or other underlying material containing a hydrocarbon component, the RRR resist comprising 94 weight percent and 60 : 40 monomeric ratio of poly(4-hydroxystyrene-co-tert-butyl acrylate), 5 weight percent of bis(tributylphenyl)iodo-1-perfluorosulfonate Di(tert butylphenyl)iodonium-1-perfluorobutane sulfonate) and 1% by weight of tetrabutylammonium hydroxide; in addition, the present invention further uses various underlayer materials of different polymer types, for example Polyester base material, novolac material, photoacid generator add-on methacrylate base material (PAG-attached-methacrylate) or methacrylate base material (methacrylate), etc. Limited to this.

In the present invention, the three-dimensional moving mechanism 20 is disposed at a block position indicated by a broken line in FIG. 3, and the present invention mainly provides the three-dimensional moving mechanism 20 independently in an existing vacuum chamber system 10. The three-dimensional moving mechanism 20 and the two-dimensional moving mechanism 122 of the sample rotating shaft 12 and the one-dimensional moving mechanism 132 of the detector rotating shaft 13 are respectively independently disposed, and the movement operations of the three are not related to each other. The three-dimensional moving mechanism 20 is provided with a first sample support frame 21, which can be used to fix the film material sample 30, wherein the first sample support frame 21 and the second sample support frame 121 are preferably selected from the group consisting of Electrostatic adsorption type support frame, but is not limited thereto. When vacuuming is performed, the vacuum chamber 11 of the vacuum chamber system 10 is preferably evacuated to ≦10 ^-7 torr.

Referring to Figures 1, 2, 3, 4A and 4B, in the preferred embodiment of the present invention, the method for measuring the anti-EUV radiation of the photosensitive material or the hydrocarbon-containing film material by the same wavelength source is used. Step (B) is performed: the film material sample 30 is moved to an exposure space 111 in an X-axis direction by an X-axis driving unit of the three-dimensional moving mechanism 20. In this step, the three-dimensional moving mechanism 20 is a set of three-dimensional coordinate step-moving mechanism, which mainly includes the first sample support frame 21, the X-axis driving unit, a Y-axis driving unit and a Z-axis driving unit. The X-axis, Y-axis and Z-axis drive units are each a stepping motor. Since the X-axis, Y-axis, and Z-axis driving units can be constructed using various commercially available stepping motors and for simplicity of illustration, the present invention omits the X-axis, Y-axis, and Z-axis driving units in the drawings. . In this step, the X-axis driving unit is configured to drive the film material sample 30 to move along the X-axis direction of the vacuum chamber 11 (ie, the up and down direction of the drawing surface) to the exposure space 111 of the vacuum chamber 11 so that Carry out step (C). The first sample support frame 21 is disposed substantially parallel to the Z-axis direction, and the first sample support frame 21 supports the film material sample 30 such that the sample surface is substantially parallel to the Y-Z plane. Furthermore, the second sample support frame 121 of the sample rotating shaft 12 is disposed parallel to the Y-axis direction, and the second sample support frame 121 can also be used to support the film material sample 30 and make the sample surface substantially parallel to the YZ plane. However, the second sample support frame 121 and the first sample support frame 21 are disposed at an angle of 90 degrees between the setting direction (the Z-axis and the Y-axis), and the two support frames are preset to have an operation space displaced from each other, so Conveniently, the second sample holder 121 receives the film material sample 30 transferred from the first sample holder 21 in the same YZ plane in a subsequent step.

Referring to Figures 1, 2, 3 and 4B, in the preferred embodiment of the present invention, the method for measuring the anti-EUV radiation of the photosensitive material or the hydrocarbon-containing film material by the same wavelength source is followed by a step. (C): The film material sample 30 is moved in a Y-axis direction by a Y-axis horse-moving unit of the three-dimensional moving mechanism 20 such that an exposure region 31 of the film material sample 30 is aligned to the EUV light source 14. In this step, the Y-axis horse-moving unit is configured to drive the film material sample 30 to move in the Y-axis direction (ie, the left-right direction of the drawing) until a predetermined surface area of the film material sample 30 (ie, the exposure) One end of the region 31) is aligned to the EUV source 14. In the present invention, the width of the exposure region 31 is set to be the same as the beam width of the EUV light source 14, and the length of the exposure region 31 is set to be at least 5 times the beam length of the EUV light source 14. During this step, the EUV source 14 has not yet begun to illuminate the EUV beam.

Referring to Figures 1, 2, 3 and 4C, in the preferred embodiment of the present invention, the method for measuring the anti-EUV radiation of the photosensitive material or the hydrocarbon-containing film material by the same wavelength source is used. (D): moving the film material sample 30 in a Z-axis direction by a Z-axis driving unit of the three-dimensional moving mechanism 20, so that the EUV light source 14 is irradiated from one end of the exposure region 31 to another in the Z-axis direction. One end to accumulate the exposure. In this step, the EUV light source 14 starts to emit light, and the present invention can control the cumulative exposure amount to the exposure area 31 by controlling the scanning speed of the Z-axis driving unit along the Z-axis. The direction (ie, the front-rear direction of the drawing surface) is irradiated to the other end by one end of the exposure area 31, and the cumulative exposure amount is usually set at several tens of mJ/cm ² (mJ/cm ² ) to several tens of J/cm. Between ² (Joules per square centimeter), that is, the exposure area 31 can be selected to be accumulated to an initial, normal or overexposed exposure condition. In steps (C) and (D), assuming that the beam width and length of the EUV source 14 are each set to 0.3 and 0.05 cm, the irradiance of the EUV source 14 is 5 mW/cm ² (milliwatts/square). Dimensions), if the subsequent cumulative exposure condition is 15 mJ/cm ² , the effective cumulative exposure area 31 is set to 0.3×0.3 cm ² , and the Z-axis drive unit has a step-and-step scan rate of 0.016667 cm. /sec (cm/sec), the time required to scan for exposure is 21 seconds. It should be noted that although in the perspective view of FIG. 4C, the exposed area 31 appears to be inclined, the length direction of the exposed area 31 is actually parallel to the Z-axis direction (ie, the front-back direction of the drawing). .

Referring to Figures 1, 2, 3, 4D, 4E, 4F and 4G, the preferred embodiment of the present invention utilizes the same wavelength source to monitor the amount of anti-EUV radiation of the photosensitive or hydrocarbon-containing film material. The measuring method is followed by step (E): moving the film material sample 30 along the X-axis direction to a measuring space 112 by the X-axis driving unit, and performing EUV mirroring on the exposed region 31 of the film material sample 30. Reflectance measurement method. In this step, the present invention can select a post-exposure delay EUV specular reflectance measurement (E1) or a fast post-exposure delay for the exposed region 31 of the thin film material sample 30 according to experimental requirements. EUV specular reflectance measurement (E2).

In the step (E), if the step (E1) of performing the EUV specular reflectance measurement method after the no-light delay is selected, the sub-step to be performed is: (E1-1), using the EUV light source 14 to the film The exposed area 31 of the material sample 30 is subjected to a very low dose specular reflectance measurement at the wavelength of the EUV source (as shown in FIG. 4E); (E1-2), moving the three-dimensional moving mechanism 20 back to the exposure space 111 And forming a next exposed region 32 (as shown in FIG. 4F) on the film material sample 30 in substantially the same steps (B) to (D); (E1-3), the film material sample The lower exposure area 32 performs the EUV specular reflectance measurement (E1) of the next unlit delay (as shown in FIG. 4G); and (E1-4), the selection repeats or does not repeat the step (E1-2) ) and (E1-3).

On the other hand, if the fast post-exposure EUV specular reflectance measurement method (E2) is selected, the sub-steps to be performed are: (E2-1), moving the three-dimensional moving mechanism 20 back to the exposure space 111, And forming a next exposure region 32 on the film material sample 30 by substantially the same steps (B) to (D) (as shown in FIG. 4F); (E2-2), selecting repeating or not repeating steps (E2-1); and (E2-3), using the EUV light source 14 to sequentially perform the extremely low dose of the plurality of exposure regions 31, 32 of the film material sample 30 at the wavelength of the EUV source wavelength Reflectance measurement (as shown in Figure 4G).

Furthermore, in more detail, the sub-step (E1-1) or (E2-3) of the specular reflectance measurement in which the very low dose is performed at the wavelength of the EUV source is performed in the above step (E1) or (E2). The detailed steps are as follows: (1) using the Z-axis driving unit to move the film material sample 30 along the Z-axis direction, and aligning a center position of the exposure region 31 to the second sample holder 121 of the sample rotating shaft 12 a rotating shaft center position; (2) using the X-axis driving unit to move the film material sample 30 along the X-axis direction to the measuring space 112 between the sample rotating shaft 12 and the detector rotating shaft 13 (as shown in FIG. 4D (3) transferring the film material sample 30 from the first sample support 21 of the three-dimensional moving mechanism 20 to the second sample support 121 of the sample rotating shaft 12 (as shown in FIG. 4E); (4) moving the three-dimensional moving mechanism 20 away from the measuring space 112; and (5) using the EUV light source 14 to perform an extremely low dose of the exposed region 31 of the thin film material sample 30 at the wavelength of the EUV light source. Specular reflectance measurement.

In the above steps, the "very low dose EUV light source" of the present invention means that the intensity of the EUV reflected light is reduced as much as possible during the measurement of the entire reflectance curve, but at least greater than the EUV detector 131. The signal/noise ratio is intended to ensure that the specular reflectance is measured smoothly, while ensuring that the cumulative EUV exposure dose within the area of the on-site monitoring film remains intact during the measurement of the specular reflectance curve. Material structure of material sample 30 to avoid affecting subsequent measurement steps.

Further, the step (E1-2) or (E2-1) of moving the three-dimensional moving mechanism 20 back to the exposure space 111 in the above step (E1) or (E2) includes the following detailed steps: (i) The three-dimensional moving mechanism 20 is re-moved into the measurement space 112 between the sample rotating shaft 12 and the detector rotating shaft 13; (ii) transferring the thin film material sample 30 from the second sample supporting frame 121 of the sample rotating shaft 12 to the three-dimensional a first sample support frame 21 of the moving mechanism 20, wherein θ is set at 90° and 2θ is set at 0° to vacate the space between the first and second sample support frames 21 and 121 to transfer the film material sample And (iii) moving the film material sample 30 to the exposure space 111 in the X-axis direction by using the X-axis driving unit.

Referring to FIG. 1 , a measurement method for monitoring the anti-EUV radiation property of a photosensitive material or a hydrocarbon-containing film material by using the same wavelength light source in the preferred embodiment of the present invention is finally carried out in the step (F): The EUV specular reflectance measurement method obtains the specular reflectance and its curve, thereby converting the optical parameter variation of the film material sample 30 to evaluate the anti-EUV radiation of the film material sample 30. In this step, the specular reflectivity method used in the present invention is a total reflection critical angle and an interference halo peak/trough angle analysis by the specular reflectance curve transition to derive the refractive index of the film sample ( n ), absorption coefficient (σ _abs or extinction coefficient k ) and film thickness ( T ), and other optical parameter starting values. Furthermore, the present invention may also choose to simulate the above-described measured specular reflectance curve directly using a commercially available kit. The calculation of the above optical parameters and the anti-EUV radiation are not the main features of the present invention and have been partially disclosed in the present invention. On August 19, 2010, the inventor filed the Republic of China Application No. 099127764 "Using the same wavelength source on-site monitoring here. The method for measuring the extreme ultraviolet radiation resistance of a photosensitive material or a film material containing a hydrocarbon component is described in the patent application, and thus the present invention will not be described in detail.

As described above, each thin film material sample can only be used to measure the relevant optical parameters of a single overexposed area due to limitations of its own equipment, which is relatively unfavorable for rapid multiple times. The measurement operation and the elimination of the background parameter variation result in the inability to ensure the accuracy and conditional consistency of the optical parameters when measuring a plurality of film material samples, and the invention of FIGS. 1 to 4G is an EUV light source 14 A set of three-dimensional coordinate moving mechanism 20 is additionally installed in the vacuum chamber system 10, so that as long as different surface areas of the same film material sample 30 are used in the same vacuum working process, a plurality of side-by-side overexposed areas 31, 32 can be formed. ..., to achieve on-site monitoring under the conditions of the wavelength of the EUV light source, and to derive the number of exposure regions 31, 32 of the same film material sample 30 in the initial, general cumulative exposure (including EUV lithography process) Array optical parameter values (n, k, T) under conditions such as exposure range), exposure under overexposure, etc., so that the anti-EUV radiation of the film material sample 30 can be completed relatively quickly and accurately. Estimate, so indeed advantageous in simplifying the measurement process of the photosensitive material film, to improve the measurement accuracy and reduce measurement costs. Furthermore, in terms of the measurement method, the present invention may also select the EUV specular reflectance measurement method for selecting the post-exposure delay of the exposure regions 31, 32 of the film material sample 30. (ie, measuring the specular reflectance every time an exposure area 31, 32... is formed) or a faster post-exposure EUV specular reflectance measurement (ie, forming a plurality of exposure areas 31, 32 first) ..., then the specular reflectances are measured one by one, so that the measurement method and apparatus can more flexibly adjust the measurement process according to the material properties of the film material sample 30 or the experimental requirements, so it is indeed beneficial to increase Measurement method and device adjustment flexibility and ease of operation.

The present invention has been disclosed in its preferred embodiments, and is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application.

10. . . Vacuum chamber system

11. . . Vacuum chamber

111. . . Exposure space

112. . . Measurement space

12. . . Sample shaft

121. . . Second sample support

122. . . Two-dimensional moving mechanism

13. . . Detector shaft

131. . . EUV detector

132. . . One-dimensional mobile mechanism

14. . . EUV light source

20. . . Three-dimensional moving mechanism

twenty one. . . First sample support

30. . . Film material sample

31. . . Exposure area

32. . . Exposure area

Fig. 1 is a flow chart showing a method for measuring the anti-EUV radiation of a photosensitive film material by the same wavelength source in the preferred embodiment of the present invention.

Fig. 2 is a plan view and a partial internal view of the vacuum chamber system for measuring EUV specular reflectance in the XY plane of the present invention.

Fig. 3 is a partial enlarged view of Fig. 2 of the present invention.

4A, 4B, 4C, 4D, 4E, 4F, and 4G are diagrams showing the operation of each step of the measurement method for monitoring the anti-EUV radiation of the photosensitive film material by the same wavelength source in the preferred embodiment of the present invention.

Claims (10)

A method for measuring the extreme ultraviolet (EUV) radiation of a photosensitive material or a hydrocarbon-containing film material on the same wavelength source, comprising the steps of: (A) placing a film material sample in a vacuum a first set of three-dimensional moving mechanisms in the chamber system, and vacuuming the vacuum chamber system; (B) the thin film is driven by one of the three-dimensional moving mechanisms The material sample moves along an X-axis direction to an exposure space; (C), the Y-axis horse-moving unit of the three-dimensional moving mechanism moves the film material sample along a Y-axis direction, so that one of the film material samples is exposed Aligning the region to an EUV light source; (D) moving the film material sample in a Z-axis direction by one of the three-dimensional moving mechanisms, such that the EUV light source is in the Z-axis direction from the exposed region One end is irradiated to the other end to accumulate the exposure amount; (E), the film material sample is moved to the measurement space along the X-axis direction by the X-axis driving unit, and the exposed area of the film material sample is subjected to EUV Specular reflectance measurement ; And (F.), Is obtained by the EUV mirror reflectivity measurement method and specular reflectance curve, thereby converting the calculated change in optical parameters of the sample film material, to assess the anti-EUV radiation sample of the material film. The measuring method according to claim 1, wherein in the step (E), the exposure region of the film material sample is selected to be subjected to an unilluminated post-delay EUV specular reflectance measurement method (E1) or fast. Delay EUV specular reflectance measurement (E2) after illumination. The measuring method according to claim 2, wherein the step (E1) of the EUV specular reflectance measuring method after the no-lighting delay comprises: (E1-1), using the EUV light source to sample the film material The exposed area is subjected to a very low dose specular reflectance measurement at the wavelength of the EUV source; (E1-2), moving the three-dimensional moving mechanism back to the exposure space, and substantially the same steps (B) to (D) a process of forming a next exposed area on the film material sample; (E1-3), performing an EUV specular reflectance measurement method (E1) for the next unexposed delay of the exposed area of the film material sample; And (E1-4), select repeating or not repeating steps (E1-2) and (E1-3). The measuring method according to claim 2, wherein the step (E2) of the EUV specular reflectance measuring method after the irradiation includes: (E2-1), moving the three-dimensional moving mechanism back to the exposure space And forming a next exposure region on the film material sample in substantially the same steps (B) to (D); (E2-2), repeating or not repeating the step (E2-1); and (E2) -3), using the EUV light source to sequentially perform the specular reflectance measurement of the EUV source wavelength on the surface of the film material sample. The measuring method according to claim 3 or 4, wherein the step (E1-1) or (E2-3) of measuring the specular reflectance of the extremely low dose at the wavelength of the EUV source includes: (1) The Z-axis driving unit moves the film material sample along the Z-axis direction to align a center position of the exposed area to a center position of a rotating shaft of one of the sample rotating shafts; (2) Using the X-axis driving unit, the film material sample is moved along the X-axis direction to a measuring space between the sample rotating shaft and a detector rotating shaft; (3) the film material sample is used by the three-dimensional moving mechanism Transferring the first sample support to the second sample support of the sample spindle; (4) moving the three-dimensional moving mechanism away from the measurement space; and (5) using the EUV light source to sample the film material The exposed area is subjected to specular reflectance measurements of very low doses at the wavelength of this EUV source. The measuring method according to claim 3 or 4, wherein the step (E1-2) or (E2-1) of moving the three-dimensional moving mechanism back to the exposure space comprises: (i), the three-dimensional The moving mechanism moves back into the measurement space between the sample rotating shaft and the detector rotating shaft; (ii) transferring the film material sample from the second sample support of the sample rotating shaft to the first sample support of the three-dimensional moving mechanism And (iii) using the X-axis driving unit to move the film material sample to the exposure space along the X-axis direction. The measuring method of claim 1, wherein the optical parameter is selected from the group consisting of a refractive index, an absorption coefficient, a film thickness, or a combination thereof; the width of the exposed region is the same as the beam width of the EUV source, and the exposed region is The length is at least 5 times the beam length of the EUV source; the exposure region is selected to accumulate to an initial, normal or overexposed exposure condition. A measuring device for monitoring the extreme ultraviolet (EUV) radiation of a photosensitive material or a hydrocarbon-containing film material on the same wavelength source, comprising: a set of three-dimensional moving mechanism, movably disposed in a vacuum chamber In the system, the three-dimensional moving mechanism has: a first sample support frame for supporting a film material sample; and an X-axis driving unit to make the film material sample along an X-axis direction in an exposure space and a measurement space. Moving between; a Y-axis horse moving unit moves the film material sample in a Y-axis direction such that one of a plurality of predetermined exposure regions of the film material sample is aligned to an EUV light source; and a Z-axis driving unit And moving the film material sample in a Z-axis direction so that the EUV light source illuminates the aligned exposure region along the Z-axis direction to accumulate an exposure amount. The measuring device of claim 8, wherein the three-dimensional moving mechanism is a set of three-dimensional coordinate stepping moving mechanism, and the X-axis, Y-axis and Z-axis driving units are respectively a stepping motor. The measuring device of claim 8, wherein the measuring space of the vacuum chamber system further comprises a sample rotating shaft having a second sample support frame, wherein the X-axis driving unit is further used to a sample of the film material on the first sample support is transferred to the second sample support; the measurement space of the vacuum chamber system further includes a detector shaft for the film material on the second sample support The predetermined exposure areas of the samples are subjected to EUV specular reflectance measurements one by one; the first and second sample holders are each an electrostatic adsorption type support frame.