TWI437654B - Film deposition apparatus, substrate processing apparatus, and film deposition method - Google Patents

Description

Film forming apparatus, substrate processing apparatus, and film forming method

The present invention relates to a film forming apparatus, a film forming method, and a storage method for forming a film by laminating a reaction product layer of a plurality of layers by sequentially supplying a reaction gas in which at least two kinds of reaction gases are mutually reacted to the surface of the substrate. There is a memory for the program that implements the method.

As a film formation method for a semiconductor process, it is known that a first reaction gas is adsorbed on a surface of a semiconductor wafer (hereinafter referred to as a wafer) as a substrate in a vacuum atmosphere, and then the supply gas is switched to a second reaction gas. Forming one or more atomic layers or molecular layers on the surface of the wafer by mutual reaction of two reactive gases, and stacking the thin layers on the wafer by, for example, performing the cycle many times. Membrane process. This process is called, for example, ALD (Atomic Layer Deposition) or MLD (Molecular Layer Deposition), and the film thickness control can be performed with high precision in accordance with the number of cycles, and the in-plane uniformity of the film quality is also good, and it is effective. The ground corresponds to a method of thinning a semiconductor element.

As an example suitable for the film formation method, a film formation using a high dielectric film of a gate oxide film is exemplified. For example, when a tantalum oxide film (SiO ₂ film) is formed, for example, a bis(t-butylamino) decane (hereinafter referred to as "BTBAS") gas or the like can be used as the first reaction gas (raw material gas). Ozone gas or the like is used as the second reaction gas (oxidation gas).

It is conceivable to use a lobed film forming apparatus including a mounting table (provided in a vacuum container) and a shower head provided on the upper surface of the vacuum vessel facing the mounting table, and supplying the reaction gas from the leaching head to the crystal on the mounting table. This film formation method is carried out by a method of discharging a non-reactive reaction gas and a reaction by-product from a bottom of a processing container. In this case, when the plurality of kinds of reaction gases are mixed with each other in the vacuum container, the reaction product is generated and the particles are generated. Therefore, when switching the reaction gas, the apparatus must supply a flushing gas such as an inert gas to carry out the gas. Replacement. This gas replacement takes a long time, and the number of cycles is sometimes as high as, for example, hundreds of times, so the device has a problem of lengthy processing time. Therefore, an apparatus and method capable of performing film formation processing with high productivity are expected.

Based on the above background, the devices described in Patent Documents 1 to 4 are discussed. In the vacuum container of these devices, a mounting table for arranging a plurality of wafers in a circumferential direction (rotation direction) and a mounting surface facing the mounting table are provided in the vacuum container. The gas is supplied to the gas supply portion of the wafer. The gas supply unit is arranged in a plurality of positions, for example, in the circumferential direction, in accordance with the wafer placed on the mounting table.

Then, the wafer is placed on the mounting table and the inside of the vacuum container is depressurized to a specific processing pressure, and the mounting table and the plurality of gas supply portions are relatively rotated about the vertical axis and simultaneously heat the wafer to remove each gas. The supply unit supplies a plurality of gases (for example, the first reaction gas and the second reaction gas) to the wafer surface. Further, in order to suppress mixing of the reaction gases in the vacuum container, a physical partition wall is provided between the gas supply portions for supplying the reaction gas, or the gas curtain is formed by the inert gas to be divided into the vacuum container. A treatment region formed by the first reaction gas and a treatment region formed by the second reaction gas are emitted.

As described above, although a plurality of kinds of reaction gases are simultaneously supplied in a common vacuum vessel, since the respective treatment regions are distinguished such that the reaction gases do not mix with each other, the first reaction gas is observed in the rotating wafer. The second reaction gas system is alternately supplied through the partition wall or the air curtain, so that the film formation process can be performed by the above method. Therefore, it is possible to carry out the film formation treatment in a short time without performing gas replacement, and it is also possible to reduce the consumption amount of the inert gas such as the flushing gas (or the need for the flushing gas).

However, in the apparatus, when a plurality of kinds of reaction gases are introduced into the common vacuum vessel, not only the mutual mixing of the reaction gases in the vacuum vessel but also the flow of the reaction gas in the vacuum vessel must be performed as described above. Tight control is required to keep the airflow to the wafer constant. That is, since the device forms a plurality of processing regions in the vacuum container, when the airflow to the wafer is disordered, the size of the processing region (ie, the reaction time between the wafer and the reaction gas) is changed, and at this time, Affects the quality of the formed film.

When the flow of the reaction gas in the vacuum vessel is turbulent in the wafer surface or between the wafer faces, for example, if a necessary amount of the reaction gas is not supplied on the wafer, the amount of the reaction gas is insufficient. If the film thickness is thinned, for example, if the oxidation reaction is not sufficiently performed, the film quality may deteriorate. Further, when the gas flow is disturbed and the reaction gas passes through the partition wall or the air curtain and is mixed with each other, the reaction product is generated as described above and causes the particles to be generated. Therefore, it is necessary to strictly control the flow of the reaction gas, but it is still insufficient to rely on the above-mentioned partition wall or air curtain, and for example, even if the airflow in the process is disturbed, the situation cannot be grasped.

On the other hand, the above apparatus maintains the inside of the vacuum vessel at a specific degree of vacuum (pressure) while performing wafer processing. Therefore, it is necessary to control the flow rate of the reaction gas in the vacuum vessel while controlling the degree of vacuum in the vacuum vessel. Therefore, the control of the airflow as described above can be extremely difficult. Moreover, the degree of vacuum in the vacuum vessel and the flow rate of the reaction gas are changed according to the process conditions for processing the wafer, so the control of the degree of vacuum and the flow of the reaction gas must be performed according to different process conditions, thereby making the Control is more difficult. However, the aforementioned patent documents do not address any discussion regarding the aforementioned airflow control.

Patent Document 5 discloses that a vacuum container is separated into a right side region and a left side region, and a gas supply port and an exhaust port are formed in the respective regions, and gas of a different kind is supplied to the regions. At the same time, the technology of discharging gas from various regions. However, no discussion has been made regarding the flow of gas in the vacuum vessel (i.e., the flow rate of the gas discharged from each of the exhaust ports). Therefore, for example, accumulation of deposits in the exhaust passage causes the exhaust gas flow rate to change with time, and the above state cannot be grasped even when the balance of the left and right side exhaust gas flows is out of order and causes, for example, one-side exhaust. Further, in the case where an exhaust pump is provided in each of the plurality of exhaust passages, there is a possibility that individual differences in exhaust capability may occur due to the state of each exhaust pump, but the individual difference is not discussed.

Further, Patent Documents 6 to 8 disclose an apparatus for performing an atomic layer CVD method by alternately adsorbing a plurality of kinds of gases on a target (corresponding to a wafer), and rotating the mounting table on which the wafer is placed. The raw material gas and the flushing gas are supplied from above the mounting table. This apparatus discharges the material gas and the flushing gas separately from the respective exhaust passages 30a and 30b while forming the air curtain by the inert gas. However, similarly to the above-described Patent Document 5, the present invention is not directed to the respective exhaust gases. The flow rate of the gas discharged from the passages 30a, 30b is discussed in any way.

Further, although a method of inserting a valve which can change the degree of opening in the exhaust passage and estimating the flow rate of the exhaust gas flowing through the exhaust passage by the degree of opening of the valve is known, it is not measured. Since the actual flow rate of the exhaust gas is such that, as described above, when the exhaust capacity of the exhaust pump is changed, the actual exhaust flow rate cannot be grasped.

Patent Document 1: U.S. Patent No. 6,634,314.

Patent Document 2: Japanese Patent Laid-Open Publication No. 2001-254181; FIG. 1 and FIG.

Patent Document 3: Japanese Patent No. 3144664; Fig. 1, Fig. 2, Patent Application No. 1.

Patent Document 4: Japanese Laid-Open Patent Publication No. Hei-4-287912.

Patent Document 5: U.S. Patent No. 7,153,542; Figs. 6A and B.

Patent Document 6: Japanese Patent Laid-Open Publication No. 2007-247066; paragraphs 0023 to 0025, 0,058, FIG. 12 and FIG.

Patent Document 7: U.S. Patent Publication No. 2007-218701.

Patent Document 8: U.S. Patent Publication No. 2007-218702.

The present invention has been made in view of the above problems, and provides a film forming apparatus, a film forming method, and a memory containing a program for carrying out the method, which can reduce the amount of use of the separation gas. The film forming apparatus is configured to sequentially supply a plurality of reaction gases which are mutually reacted in a vacuum vessel to the surface of the substrate to laminate a plurality of layers of the reaction product layer to form a film, and the separation gas system supplied to the separation region is used for the separation gas system. The atmosphere of the first processing region in which the first reaction gas is supplied and the atmosphere of the second processing region in which the second reaction gas is supplied are disposed along the circumferential direction of the turntable on which the substrate is placed.

In the film forming apparatus according to the first aspect of the present invention, at least two kinds of reaction gases which are mutually reacted are sequentially supplied to the surface of the substrate in a vacuum vessel, and a plurality of reaction product layers are laminated by performing such a supply cycle. A film is formed, and the turntable is provided in the vacuum container and includes a substrate mounting region for mounting the substrate; and the first reaction gas supply mechanism faces the substrate mounting region side of the turntable The first reaction gas is supplied to the first reaction gas, and the second reaction gas supply means is provided in the circumferential direction of the turntable away from the first reaction gas supply means, and supplies the second reaction to one side of the substrate mounting region side of the turntable. a gas; a separation region between the first treatment region in which the first reaction gas is supplied in the circumferential direction and the second treatment region in which the second reaction gas is supplied; and the first exhaust passage in the first treatment region An exhaust port is provided between the separation region; the second exhaust passage has an exhaust port between the second processing region and the separation region; and the first vacuum exhaust mechanism is connected through the first valve The first exhaust passage; the second vacuum exhaust mechanism is connected to the second exhaust passage through the second valve; and the first pressure detecting mechanism is inserted into the first valve and the first vacuum exhaust mechanism a second pressure detecting mechanism is interposed between the second valve and the second vacuum exhausting mechanism; and the processing pressure detecting means is provided at least at any one of the first valve and the second valve And a control unit that outputs a control signal for controlling the degree of opening of the first valve and the second valve based on the respective pressure detection values detected by the first pressure detecting means and the second pressure detecting means, so that the vacuum The pressure in the container and the gas flow ratios respectively flowing through the first exhaust passage and the second exhaust passage can reach respective set values.

According to a second aspect of the present invention, in a film forming apparatus, at least two kinds of reaction gases which are mutually reacted are sequentially supplied to a surface of a substrate in a vacuum vessel, and a plurality of reaction product layers are laminated by performing such a supply cycle. A film is formed, and the turntable is provided in the vacuum container and includes a substrate mounting region for mounting the substrate; and the first reaction gas supply mechanism faces the substrate mounting region side of the turntable The first reaction gas is supplied to the first reaction gas, and the second reaction gas supply means is provided in the circumferential direction of the turntable away from the first reaction gas supply means, and supplies the second reaction to one side of the substrate mounting region side of the turntable. a gas; a separation region between the first treatment region in which the first reaction gas is supplied in the circumferential direction and the second treatment region in which the second reaction gas is supplied; and the first exhaust passage in the first treatment region An exhaust port is provided between the separation region; the second exhaust passage has an exhaust port between the second processing region and the separation region; and the first vacuum exhaust mechanism is connected through the first valve The first exhaust passage; the second vacuum exhaust mechanism is connected to the second exhaust passage through the second valve; and the first processing pressure detecting means is provided in the first valve and the first processing region The second processing pressure detecting means is disposed between the second valve and the second processing region; and the control portion is detected by the first processing pressure detecting means and the second processing pressure detecting means Each of the pressure detection values outputs a control signal for controlling the degree of opening of the first valve and the second valve such that the pressure in the vacuum container and the pressure difference between the first processing region and the second processing region can reach respective The set value set.

According to a third aspect of the present invention, in the vacuum container, at least two types of reaction gases which are mutually reacted are sequentially supplied to the surface of the substrate, and a plurality of reaction product layers are laminated by performing such a supply cycle. Forming a film comprising: a process of rotating a substrate into a turret in the vacuum container; rotating the turret; and processing the substrate from the first reaction gas supply mechanism toward the turret a process of supplying the first reaction gas to the first processing region on the surface on the side of the region; and the second reaction gas supply mechanism provided in the circumferential direction away from the turntable toward the substrate mounting region side of the turntable a process of supplying the second reaction gas to the second processing region, and supplying the separation gas by a separation gas supply mechanism provided in the separation region between the first reaction gas supply mechanism and the second reaction gas supply mechanism The process of the first reaction gas in the first processing region from the first vacuum exhauster by the first exhaust passage having an exhaust port between the first processing region and the separation region Discharging and discharging the second reaction gas in the second treatment region from the second vacuum exhaust mechanism by the second exhaust passage having an exhaust port between the second treatment region and the separation region a process of detecting a pressure in the vacuum container, a first pressure interposed between the first valve of the first exhaust passage and the first vacuum exhaust mechanism, and a second valve inserted in the second exhaust passage and a process of the second pressure between the second vacuum exhaust mechanisms; and adjusting the opening degree of the first valve and the second valve according to the respective pressure detection values detected by the detection process so that the vacuum container is in the vacuum container The pressure and the flow rate of the gas flowing through the first exhaust passage and the second exhaust passage can each reach a set value set by each.

According to a fourth aspect of the present invention, in the vacuum container, at least two kinds of reaction gases which are mutually reacted are sequentially supplied to the surface of the substrate, and a plurality of reaction product layers are laminated by performing such a supply cycle. Forming a film comprising: a process of rotating a substrate into a turret in the vacuum container; rotating the turret; and processing the substrate from the first reaction gas supply mechanism toward the turret a process of supplying the first reaction gas to the first processing region on the surface on the side of the region; and the second reaction gas supply mechanism provided in the circumferential direction away from the turntable toward the substrate mounting region side of the turntable a process of supplying the second reaction gas to the second processing region, and supplying the separation gas by a separation gas supply mechanism provided in the separation region between the first reaction gas supply mechanism and the second reaction gas supply mechanism The process of the first reaction gas in the first processing region from the first vacuum exhauster by the first exhaust passage having an exhaust port between the first processing region and the separation region Discharging and discharging the second reaction gas in the second treatment region from the second vacuum exhaust mechanism by the second exhaust passage having an exhaust port between the second treatment region and the separation region a process of detecting a first pressure interposed between the first valve and the first processing region of the first exhaust passage and a second valve interposed between the second valve and the second processing region a pressure detecting process; and adjusting the opening degree of the first valve and the second valve according to the respective pressure detection values detected by the detecting process so that the pressure in the vacuum container and the first processing region and the first 2 The process of the pressure difference between the processing areas can reach the set value of each setting.

According to a fifth aspect of the present invention, in a film forming apparatus, at least two types of reaction gases which are mutually reacted are sequentially supplied to a surface of a substrate in a vacuum vessel, and a plurality of reaction product layers are laminated by performing such a supply cycle. A film is formed, and the turntable is provided in the vacuum container and includes a substrate mounting region for mounting the substrate; and the first reaction gas supply mechanism faces the substrate mounting region side of the turntable a structure in which the first reaction gas is supplied to the one surface, and the second reaction gas supply means is provided in the circumferential direction of the turntable away from the first reaction gas supply means, and supplies the surface to the side of the substrate mounting region of the turntable. (2) The structure of the reaction gas; the separation region is located between the first treatment region in which the first reaction gas is supplied in the circumferential direction and the second treatment region in which the second reaction gas is supplied; and the top surface is connected to the rotary table Forming a narrow space at both sides of the separation gas supply mechanism in the rotation direction, so that the separation gas flows from the separation region to the treatment region side; a discharge hole for discharging the separation gas onto the substrate mounting surface side of the turntable is formed in a central portion of the vacuum container; the first exhaust passage is between the first processing region and the separation region An exhaust port; the second exhaust passage has an exhaust port between the second processing region and the separation region; the first vacuum exhaust mechanism is connected to the first exhaust passage; and the second vacuum An exhaust mechanism is connected to the second exhaust passage.

According to a sixth aspect of the present invention, in the vacuum container, at least two kinds of reaction gases which are mutually reacted are sequentially supplied to the surface of the substrate, and a plurality of reaction product layers are laminated by performing such a supply cycle. Forming a film comprising: a process of placing a substrate on a turntable placed substantially horizontally in the vacuum container; rotating the process of the turntable; facing a side of the substrate mounting region side of the turntable, and The first reaction gas supply means supplies the first reaction gas to the first processing region; the second reaction gas is provided from the surface of the turntable on the substrate mounting region side and away from the circumferential direction of the turntable The supply means supplies the second reaction gas to the second processing region, and supplies the separation gas by the separation gas supply means provided in the separation region between the first reaction gas supply means and the second reaction gas supply means. a process for diffusing the separation gas to a narrow space between the top surface of the turntable and the turntable at both sides in the direction of rotation of the separation gas supply mechanism; a discharge port formed in a central portion of a central portion of the vacuum container, wherein the separation gas is ejected to a substrate mounting surface side of the turntable; and the first processing region and the separation region have a row The first exhaust passage of the gas port discharges the first reaction gas in the first treatment region from the first vacuum exhaust mechanism, and has an exhaust port between the second treatment region and the separation region a second exhaust passage for discharging the second reaction gas in the second processing region from the second vacuum exhausting mechanism; and a first vacuum exhausting mechanism connected to the first exhaust passage The separation gas is discharged from the first reaction gas, and the separation gas and the second reaction gas are discharged from the second vacuum exhaust mechanism connected to the second exhaust passage.

According to the following embodiment, a processing region of a plurality of reactive gases that react with each other is formed in the common vacuum vessel along the rotation direction of the turntable, and the substrate is sequentially passed through the plurality of processing regions by the turntable. When a film is formed by laminating a plurality of reaction product layers, a separation region for supplying separation gas is interposed between the treatment regions, and a first exhaust passage and a second exhaust gas are provided at a position of the exhaust port. The passage separates the respective reaction gases and exhausts them. Then, when the pressure in the vacuum vessel reaches a set value, the degree of opening of the valve inserted in each exhaust passage is adjusted so that the flow ratio of the gas discharged from each exhaust passage or the pressure difference between the respective treatment regions can be The set value is reached. Therefore, an appropriate gas flow can be stably formed on both sides of the separation region, since the gas flow of the reaction gas on the surface of the substrate can be stabilized, and the film quality can be uniform in the wafer surface or between the wafer faces (the film thickness is uniform). And excellent film. Further, it is possible to prevent the exhaust gas from being uneven on both sides of the separation region, thereby preventing the reaction gases which are mutually reactive from passing through the separation region and mixing with each other, thereby suppressing the generation of reaction products other than the surface of the substrate, thereby suppressing the occurrence of particles. .

(First embodiment)

The film forming apparatus according to the first embodiment of the present invention includes a flat vacuum container 1 having a circular shape in plan view as shown in FIG. 1 (cross-sectional view taken along line I-I' in FIG. 3) to FIG. The turntable 2 in the vacuum vessel 1 and whose center of rotation is located at the center of the vacuum vessel 1. The top plate 11 of the vacuum container 1 is a structure that can be detached from the container body 12. By decompressing the inside of the vacuum vessel 1, the top plate 11 can be pressed toward the container body 12 side through a sealing member (for example, an O-ring 13) which is annularly provided on the periphery of the container body 12 to maintain airtightness. The state, when to be separated from the container body 12, is lifted upward by a drive mechanism not shown.

The turntable 2 is fixed to the cylindrical axial center portion 21 at the center portion, and the axial center portion 21 is fixed to the upper end portion of the rotary shaft 22 that extends in the vertical direction. The rotary shaft 22 extends through the bottom surface portion 14 of the vacuum vessel 1, and its lower end is attached to a drive portion 23 that enables the rotary shaft 22 to rotate about a vertical axis (clockwise rotation in this example). The rotary shaft 22 and the drive unit 23 are housed in a cylindrical casing 20 having an opening in the upper direction. The flange portion provided on the upper side of the casing 20 is hermetically mounted on the lower side of the bottom surface portion 14 of the vacuum vessel 1 so that the internal atmosphere of the casing 20 and the external atmosphere are maintained in an airtight state.

A plurality of (for example, five) substrates (semiconductor wafers; hereinafter referred to as "wafers") are placed on the surface of the turntable 2 in the direction of rotation (circumferential direction) as shown in FIGS. 2 and 3 Circular recess 24. In addition, for convenience, the wafer W is drawn in only one recess 24 in FIG. 4 is a development view in which the turntable 2 is cut along the concentric circle and then expanded laterally. As shown in FIG. 4A, the diameter of the recess 24 is slightly larger than the diameter of the wafer W (for example, 4 mm), and the depth is further The size is set to be equal to the thickness of the wafer W. Therefore, when the wafer W is placed in the concave portion 24, the surface of the wafer W and the surface of the turntable 2 (the region where the wafer W is not placed) are aligned. Since the difference in height between the surface of the wafer W and the surface of the turntable 2 is excessive due to the pressure variation of the step portion, the uniformity of the in-plane thickness of the film can be made uniform, and the surface of the wafer W and the turntable 2 The height of the surface is preferably high. The height of the surface of the wafer W and the surface of the turntable 2 is such that the height is equal to or less than 5 mm, and the height difference between the two surfaces should be as close as possible to the processing accuracy. zero. A through hole (not shown) is formed in the bottom surface of the recessed portion 24. For example, three lifting pins 16 (refer to FIG. 8), which will be described later, extend through the through hole to support the inner surface of the wafer W to lift the wafer W. .

The concave portion 24 is for positioning the wafer W so as not to fly out due to the centrifugal force generated by the rotation of the turntable 2, and corresponds to the substrate mounting region of the present invention, but the substrate mounting region (wafer mounting region) It is not limited to a concave portion, and may be, for example, a guide member in which a plurality of peripheral portions of the guide wafer W are arranged in the circumferential direction of the wafer W at the surface of the turntable 2, or an electrostatic holder is disposed on the turntable 2 side. When the holder W mechanism adsorbs the wafer W, the region where the wafer W is placed by the suction is the substrate placement region.

As shown in FIGS. 2 and 3, the vacuum containers 1 are spaced apart from each other in the circumferential direction of the vacuum vessel 1 (the turning direction of the turntable 2) at positions above the regions through which the recesses 24 of the turntable 2 pass. The first reaction gas nozzle 31, the second reaction gas nozzle 32, and the two separation gas nozzles 41 and 42 are radially extended in the center portion. In the present example, the second reaction gas nozzle 32, the separation gas nozzle 41, the first reaction gas nozzle 31, and the separation gas nozzle 42 are arranged in a clockwise manner. The reaction gas nozzles 31 and 32 and the separation gas nozzles 41 and 42 are attached to, for example, the side wall of the vacuum vessel 1, and the gas introduction ports 31a, 32a, 41a, and 42a at the root end portion penetrate the side wall.

In the example shown in the drawings, the gas nozzles 31, 32, 41, and 42 are introduced into the vacuum vessel 1 from the peripheral wall portion of the vacuum vessel 1, but may be introduced from the annular projecting portion 5 to be described later. At this time, an L-shaped conduit having an opening may be provided on the outer peripheral surface of the protruding portion 5 and the outer surface of the top plate 11, and one side opening of the L-shaped conduit inside the vacuum vessel 1 is connected to the gas nozzle 31 (32, 41, 42), the other side opening of the L-shaped duct outside the vacuum vessel 1 is connected to the structure of the gas introduction port 31a (32a, 41a, 42a).

As shown in FIG. 3, the reaction gas nozzle 31 is connected to a first reaction gas (BTBAS gas; bis(tert-butylamino) decane) via a gas supply pipe 31b through which a valve 36a and a flow rate adjusting portion 37a are interposed. The first gas supply source 38a. The reaction gas nozzle 32 is connected to the second gas supply source 38b in which the second reaction gas (O ₃ gas; ozone) is stored via the gas supply pipe 32b through which the valve 36b and the flow rate adjustment unit 37b are interposed. Further, the separation gas nozzle 41 is connected to the N ₂ gas supply source 38c storing the N ₂ gas (nitrogen gas) serving as the separation gas and the inert gas via the gas supply pipe 41b through which the valve 36c and the flow rate adjustment unit 37c are interposed. The separation gas nozzle 42 is connected to the N ₂ gas supply source 38c via a gas supply pipe 42b through which a valve 36d and a flow rate adjustment unit 37d are interposed.

The gas supply pipe 31b between the reaction gas nozzle 31 and the valve 36a is connected to the N ₂ gas supply source 38c via the valve 36e and the flow rate adjustment unit 37e, and when the flow rate ratio of the exhaust gas is adjusted as described later, The reaction gas nozzle 31 supplies N ₂ gas into the vacuum vessel 1 . Further, similarly, the gas supply pipe 32b between the reaction gas nozzle 32 and the valve 36b is connected to the N ₂ gas supply source 38c via the valve 36f and the flow rate adjusting portion 37f. The gas supply system 39 is constituted by the valves 36a to 36f and the flow rate adjusting units 37a to 37f.

The reaction gas nozzles 31 and 32 are arranged at intervals of, for example, 10 mm in the longitudinal direction of the nozzle, and are provided with discharge holes 33, for example, having a diameter of 0.5 mm, which face downward and are used to eject the reaction gas toward the lower side. Further, the separation gas nozzles 41 and 42 are provided with, for example, a discharge hole 40 having a diameter of 0.5 mm which is disposed directly downward and which discharges the separation gas toward the lower side at intervals of, for example, about 10 mm in the longitudinal direction. Each of the reaction gas nozzles 31 and 32 corresponds to a first reaction gas supply mechanism and a second reaction gas supply mechanism, and a lower region thereof is a first processing region 91 for adsorbing BTBAS gas on the wafer W, and The O ₃ gas is adsorbed on the second processing region 92 on the wafer W.

The separation gas nozzles 41 and 42 are for forming a separation region D in which the first processing region 91 and the second processing region 92 can be separated, and the top plate 11 of the vacuum vessel 1 at the separation region D is as shown in FIGS. 2 to 4A and 4B. The display portion is provided with a convex portion 4 which is fan-shaped in a plan view and protrudes downward, and the convex portion 4 is centered on the center of rotation of the turntable 2, and is disposed in the circumferential direction along the inner peripheral wall of the vacuum vessel 1 The circle formed by the division is formed. The separation gas nozzles 41 and 42 are housed in the groove portion 43 formed in the center in the circumferential direction of the convex portion 4 and extending in the radial direction of the circle. In other words, the distance from the central axis of the separation gas nozzle 41 (42) to the edge of the fan-shaped portion of the convex portion 4 (the edge on the upstream side in the rotation direction of the turntable 2 and the edge on the downstream side) is set to be the same length.

Further, in the present embodiment, the groove portion 43 is formed by dividing the convex portion 4 into two equal parts. However, in another embodiment, for example, the convex portion 4 may be formed on the turntable 2 as viewed from the groove portion 43. The upstream side in the turning direction is a groove portion 43 having a wider structure than the downstream side in the turning direction.

Therefore, both sides of the separation gas nozzles 41, 42 in the direction of rotation have, for example, a flat low top surface 44 (the first top surface; that is, the lower side of the convex portion 4), and the rotation of the top surface 44 The top side of the direction has a top surface 45 (second top surface) higher than the top surface 44. The function of the convex portion 4 prevents the first reaction gas and the second reaction gas from intruding between the first reaction gas and the second reaction gas to form a narrow space (separation space) capable of preventing the reaction gases from mixing with each other.

In other words, the separation gas nozzle 41 can prevent the intrusion of the O ₃ gas from the upstream side in the rotation direction of the turntable 2 and prevent the intrusion of the BTBAS gas from the downstream side in the rotation direction. The term "blocking gas intrusion" means that the separated gas (N ₂ gas) discharged from the separation gas nozzle 41 is diffused between the first top surface 44 and the surface of the turntable 2, and is blown to the first one in this example. The space below the second top surface 45 of the top surface 44 is such that gas cannot enter from the adjacent space. Then, the phrase "making the gas incapable of invading" does not mean that it is completely incapable of entering the space below the convex portion 4 from the adjacent space, and it means that it may still invade much, but it can still remain intrusion from both sides. When the O ₃ gas and the BTBAS gas do not mix with each other inside the convex portion 4, the function of the separation region D can be exhibited as long as the above-described action can be achieved, that is, the atmosphere separating the first processing region 91 and the second processing region are exhibited. The separation of the atmosphere of 92. Therefore, the narrowness of the narrow space is set to ensure a pressure difference between the narrow space (the space below the convex portion 4) and the region adjacent to the space (this example refers to the space below the second top surface 45). The size and size of the action of "the gas cannot be invaded" can be exerted, and the specific size varies depending on the area of the convex portion 4 and the like. Further, the gas adsorbed on the wafer W can of course pass through the inside of the separation region D, and the gas is prevented from intruding into the gas in the gas phase.

In this example, when the wafer W having a diameter of 300 mm is used as the substrate to be processed, the convex portion 4 is located at the outer peripheral side portion (the boundary portion of the protruding portion 5 to be described later) located 140 mm from the center of rotation of the turntable 2 at this time. The length in the circumferential direction (the arc length of the concentric circles of the turntable 2) is, for example, 146 mm, and the length in the circumferential direction at the outermost portion of the wafer W mounting region (recess 24) is, for example, 502 mm. Further, as shown in FIG. 4A, at the outer portion, the length of the convex portion 4 at each of the left and right sides of the separation gas nozzle 41 (42) in the circumferential direction is L, and the length L is 246 mm.

Further, as shown in Fig. 4A, the height h of the lower side of the convex portion 4 (i.e., the top surface 44) from the surface of the turntable 2 may be, for example, 0.5 mm to 10 mm, preferably about 4 mm. At this time, the rotation speed of the turntable 2 is set to, for example, 1 rpm to 500 rpm. Therefore, in order to ensure the separation function of the separation area D, the size of the convex portion 4 and the lower portion of the convex portion 4 (the first top surface 44) are set according to, for example, an experiment or the like in accordance with the use range of the rotational speed of the turntable 2 or the like. The height h between the surface of the turntable 2. Further, the separation gas is not limited to nitrogen (N ₂ ), and an inert gas such as argon (Ar) may be used. However, it is not limited to these gases, and hydrogen (H ₂ ) or the like may be used as long as it does not affect the formation. The gas to be treated by the membrane is not particularly limited in the kind of the gas. Further, the gas used for the flow rate adjustment is not limited to the inert gas such as the N ₂ gas, and the gas may be a gas that does not affect the film formation process. In this example, since N ₂ gas is used as the separation gas and the inert gas, it is not necessary to switch the inert gas at the start of the film formation process as described later, but a different gas may be used as the separation gas and Inactive gas.

On the other hand, a protruding portion 5 is provided along the outer periphery of the axial center portion 21 below the top plate 11 so as to face the axial center portion 21 of the turntable 2 on the outer peripheral side. The protruding portion 5 and the portion on the center of rotation of the turntable 2 of the convex portion 4 are continuously formed, and the lower portion thereof is formed at the same height as the lower portion (top surface 44) of the convex portion 4. 2 and 3 are diagrams of cutting the top plate 11 horizontally from a position lower than the top surface 45 and higher than the separation gas nozzles 41, 42. In addition, the protruding portion 5 and the convex portion 4 are not necessarily limited to be integrated, and may be individual individuals.

The method of manufacturing the combined structure of the convex portion 4 and the separation gas nozzle 41 (42) is not limited to the formation of the groove portion 43 at the center of one of the fan-shaped plates that are the convex portions 4, and the separation portion is provided in the groove portion 43. The structure of the gas nozzle 41 (42) may be a structure in which two fan-shaped plates are used and fixed to the both sides of the separation gas nozzle 41 (42) in the lower side of the top plate 11 by screwing or the like.

The lower surface of the top plate 11 of the vacuum vessel 1, that is, the top surface seen from the wafer mounting region (recess 24) of the turntable 2, has a first top surface 44 along its circumferential direction and a height higher than the top surface as described above. 44 is a higher second top surface 45, Fig. 1 is a longitudinal section provided with a region of the upper top surface 45, and Fig. 5 is a longitudinal section provided with a region of the lower top surface 44. As shown in FIGS. 2 and 5, a peripheral portion of the fan-shaped convex portion 4 (a portion on the outer edge side of the vacuum vessel 1) is formed with a curved portion 46 that faces the outer end surface of the turntable 2 and is bent in an L shape. The fan-shaped convex portion 4 is provided on the side of the top plate 11 and can be detached from the container body 12, so that the outer peripheral surface of the curved portion 46 has a slight gap with the container body 12. Similarly to the convex portion 4, the curved portion 46 is provided for the purpose of preventing the reaction gas from intruding from both sides and preventing the two reaction gases from mixing with each other, and between the inner peripheral surface of the curved portion 46 and the outer end surface of the turntable 2 The gap and the gap between the outer peripheral surface of the curved portion 46 and the container body 12 are set to be the same as the height h of the top surface 44 facing the surface of the turntable 2. In the present example, the inner peripheral surface of the curved portion 46 constitutes the inner peripheral wall of the vacuum vessel 1 as viewed from the surface side region of the turntable 2.

In the separation region D, the inner peripheral wall of the container body 12 is close to the outer peripheral surface of the curved portion 46 as shown in FIG. 5 to form a vertical surface, but the portion other than the separation region D is as shown in FIG. For example, the portion facing the outer end surface of the turntable 2 is traversed to the bottom surface portion 14 and cut into a structure in which the longitudinal cross-sectional shape is rectangular and the outer side is recessed. In the recessed portion, the regions that communicate with the first processing region 91 and the second processing region 92 are referred to as a first exhaust region E1 and a second exhaust region E2, respectively, and the first exhaust regions E1 and The first exhaust port 61 and the second exhaust port 62 are formed in the bottom portion of the second exhaust region E2 as shown in FIGS. 1 and 3 .

As shown in FIG. 1 described above, the first exhaust port 61 is connected to the first vacuum exhaust mechanism (for example, the vacuum pump 64a) via the first exhaust passage 63a through which the first valve 65a is placed. The first valve 65a is, for example, an APC (Auto Pressure Controller) or the like which can change the degree of opening thereof, and is configured to adjust the flow rate of the gas flowing through the first exhaust passage 63a in accordance with the degree of opening of the valve 65a. The first exhaust gas passage 63a located on the upstream side (the vacuum vessel 1 side) and the downstream side (the vacuum pump 64a side) of the first valve 65a is provided with a first processing pressure detecting means 66a composed of a pressure gauge or the like. The first pressure detecting mechanism 67a. The first processing pressure detecting means 66a is for detecting the pressure in the vacuum chamber 1 on the upstream side of the first valve 65a, and the first pressure detecting means 67a is for detecting the pressure between the first valve 65a and the vacuum pump 64a. The control unit 80, which will be described later, calculates the difference (pressure difference) between the pressure detection values detected by the first processing pressure detecting means 66a and the first pressure detecting means 67a using, for example, Bernoulli's law. The pressure drop loss of the first exhaust passage 63a and the first valve 65a is considered to calculate the gas flow rate flowing through the first exhaust passage 63a (the first valve 65a).

Further, the second exhaust port 62 is similarly connected to the second vacuum exhaust mechanism (for example, the vacuum pump 64b) via the second exhaust passage 63b through which the second valve 65b is interposed. Similarly to the first valve 65a, the second valve 65b is also composed of APC or the like, and the flow rate of the gas flowing through the second exhaust passage 63b can be adjusted in accordance with the degree of opening of the valve 65b. Each of the second exhaust passages 63b located on the upstream side and the downstream side of the second valve 65b is provided with a second processing pressure detecting means 66b and a second pressure detecting means 67b each composed of a pressure gauge or the like. The second processing pressure detecting means 66b and the second pressure detecting means 67b are each for detecting the pressure in the vacuum chamber 1 and the pressure on the downstream side of the second valve 65b. Similarly, the control unit 80 calculates the difference between the pressures detected by the second processing pressure detecting means 66b and the second pressure detecting means 67b, and flows through the second exhaust passage 63b (the second valve). 65b) Gas flow. Hereinafter, for convenience, the first valve 65a and the second valve 65b may be referred to as a valve M (master) and a valve S (slave), respectively.

As described above, in a plan view, the exhaust ports 61, 62 are disposed on both sides of the rotation direction of the separation region D, so that the separation region D surely exerts its separation function, and the rotation from the turntable 2 is explained in detail. In the center, the first exhaust port 61 is formed between the first processing region 91 and the separation region D adjacent to the first processing region 91, for example, on the downstream side in the rotation direction, and the center of rotation from the turntable 2 is viewed. A second exhaust port 62 is formed between the second processing region 92 and the separation region D adjacent to the second processing region 92, for example, on the downstream side in the rotation direction, and each of them is exclusively used for performing each reaction gas ( Exhaust of BTBAS gas and O ₃ gas). In the present example, an exhaust port 61 is provided in an extension line of the first reaction gas nozzle 31 and the edge of the first reaction gas nozzle 31 adjacent to the separation region D on the downstream side in the rotation direction of the reaction gas nozzle 31. Further, the other exhaust port 62 is provided in the extension of the second reaction gas nozzle 32 and the edge of the second reaction gas nozzle 32 adjacent to the separation region D on the downstream side in the rotation direction of the reaction gas nozzle 32. Between the lines. In other words, the first exhaust port 61 is provided on a straight line L1 that communicates with the first processing region 91 at the center of the turntable 2 shown by the one-dot chain line in FIG. 3, and the center of the turntable 2 is adjacent to the first processing region. 91 is located between the straight line L2 where the upstream side edge of the separation region D on the downstream side communicates, and the second exhaust port 62 is provided at the center of the turntable 2 and the second processing region 92 shown by the two-dot chain line in FIG. The line L3 that is connected and the center of the turntable 2 are located between a line L4 that is continuous with the upstream side edge of the separation area D on the downstream side of the second processing area 92.

Further, since the pressures measured by the first processing pressure detecting means 66a and the second processing pressure detecting means 66b are almost the same, any of the first processing pressure detecting means 66a and the second processing pressure detecting means 66b may be used. The pressure detection value is used as a pressure value on the upstream side of the valves 65a and 65b used for calculating the flow rates of the respective gases in the first exhaust passage 63a and the second exhaust passage 63b. Further, the pressures of the exhaust passages 63a, 63b on the upstream side of the valves 65a, 65b are almost equal to the pressures in the vacuum vessel 1, and therefore the pressure detection value of the pressure detecting means additionally provided in the vacuum vessel 1 can be used instead of the treatment. The pressure detection values of the pressure detecting mechanisms 66a, 66b are used as pressure values for calculating the gas flow rate.

Further, the number of the exhaust ports to be provided is not limited to two, and may be, for example, a separation region D including the separation gas nozzle 42 and a second reaction gas nozzle 32 adjacent to the downstream side of the separation region D in the rotation direction. A total of three exhaust ports are provided, or a total of three or more may be provided. The exhaust ports 61, 62 of the present example are disposed at a lower position than the turntable 2, thereby exhausting from a gap between the inner peripheral wall of the vacuum vessel 1 and the periphery of the turntable 2, but is not limited to being disposed in a vacuum. The bottom surface of the container 1 may also be disposed on the side wall of the vacuum vessel 1. Further, when the exhaust ports 61 and 62 are provided on the side wall of the vacuum container 1, they may be provided at a higher position than the turntable 2. Compared with the case where the exhaust is performed from the top surface facing the turntable 2, the exhaust ports 61, 62 provided as described above can cause the gas system on the turntable 2 to flow toward the outer edge side of the turntable 2, thereby suppressing The invention is advantageous from the standpoint of raising particles.

The space between the turntable 2 and the bottom surface portion 14 of the vacuum vessel 1 is provided with a heater unit 7 as a heating means as shown in Figs. 1 and 6, and the crystal on the turntable 2 can be transmitted through the turntable 2. The circle W is heated to a temperature determined by the process conditions of the process. A shielding unit 71 is disposed around the entire circumference of the heater unit 7 on the lower side near the periphery of the turntable 2 to surround the atmosphere above the turntable 2 and even the exhaust area E with the heater unit 7 The atmosphere is divided. The upper edge of the shielding unit 71 is bent outward to form a flange shape, and the gap between the curved surface and the lower side of the turntable 2 can be narrowed to suppress gas from entering the shield assembly 71 from the outside.

In the vicinity of the center portion of the lower side of the turntable 2, the portion of the bottom surface portion 14 located closer to the center of rotation than the space in which the heater unit 7 is disposed is close to the axial center portion 21 to form a narrow space therebetween, and The through hole that penetrates the rotary shaft 22 of the bottom surface portion 14 has a narrow gap between the inner peripheral surface and the rotary shaft 22, and the narrow spaces communicate with the casing 20. Then, the casing 20 is provided with a flushing gas supply pipe 72 for supplying a flushing gas (N ₂ gas) into the narrow space for flushing. Further, at the lower side of the heater unit 7, the bottom surface portion 14 of the vacuum vessel 1 is provided with a flushing gas supply pipe 73 for rinsing the installation space of the heater unit 7 at a plurality of positions in the circumferential direction.

By providing the above-described flushing gas supply pipes 72, 73, as shown by the flow arrows of the flushing gas in FIG. 7, the space in the casing 20 or the installation space of the heater unit 7 is flushed with N ₂ gas, which The flushing gas system is discharged from the gap between the turntable 2 and the shield assembly 71 to the exhaust ports 61, 62 via the exhaust region E. Thereby, it is possible to prevent the BTBAS gas or the O ₃ gas from flowing from the lower side of the turntable 2 to the other side from either of the first processing region 91 and the second processing region 92, so that the flushing gas can achieve the function of separating the gas.

Further, a separation gas supply pipe 51 is connected to the center portion of the top plate 11 of the vacuum vessel 1 to supply a separation gas (N ₂ gas) to the space 52 between the top plate 11 and the axial center portion 21. The separation gas system supplied to the space 52 is ejected toward the periphery along the narrow gap 50 between the protruding portion 5 and the turntable 2 along the surface on the wafer mounting region side of the turntable 2. Since the space surrounded by the protruding portion 5 is filled with the separation gas, it is possible to prevent the reaction gas (BTBAS gas or O ₃ gas) from being mixed with each other via the center portion of the turntable 2 between the first processing region 91 and the second processing region 92. . In other words, the film forming apparatus includes a central portion region C formed by dividing the center of rotation of the turntable 2 from the vacuum chamber 1 to separate the atmospheres of the first processing region 91 and the second processing region 92, wherein The center portion region C is formed with a discharge port that ejects the separation gas to the surface of the turntable 2 while being flushed by the separation gas in the rotation direction. Further, the discharge port described here corresponds to the narrow gap 50 between the protruding portion 5 and the turntable 2.

Further, as shown in FIG. 2, FIG. 3 and FIG. 8, the side wall of the vacuum container 1 is formed with a transfer port 15 for transferring the wafer W between the external transfer arm 10 and the turntable 2, and the transfer port 15 is Opening and closing is performed by a gate valve not shown in the drawing. Further, since the wafer mounting region (recess 24) of the turntable 2 transfers the wafer W to and from the transfer arm 10 at the position facing the transfer port 15, the lower side of the turntable 2 corresponds to the transfer position. The portion is provided with an elevating mechanism (not shown) that passes through the concave portion 24 to lift the wafer W from the inner surface.

Further, as shown in FIG. 9, the film forming apparatus includes a control unit 80 composed of a computer for controlling the overall operation of the apparatus. The control unit 80 includes a CPU 81, a memory 82, a processing program 83, a working memory 84, and a timer 86. In the memory 82, the flow rate Va of the BTBAS gas supplied from the first reaction gas nozzle 31 and the flow rate Vb of the O ₃ gas supplied from the second reaction gas nozzle 32 are set for each process condition. The processing pressure P and the flow rate ratio F of the gas discharged from the first exhaust passage 63a and the second exhaust passage 63b (the flow rate of the gas flowing through the second exhaust passage 63b / the flow rate of the gas flowing through the first exhaust passage 63a) The area where the condition is processed. The gas flow rate ratio F is such that in the steady state, the gas flow supplied to the wafer W in the first processing region 91 and the second processing region 92 can be fixed in the in-plane and surface of the wafer W (stabilization) ) The value set. Specifically, the numerical values set are such that the processing temperature and the processing pressure are stably maintained at values corresponding to the process conditions, and the gas flows from the first exhaust passage 63a and the second exhaust passage 63b can be made. The flow rate of the gas supplied from the first reaction gas nozzle 31 and the second reaction gas nozzle 32 (including the N ₂ gas supplied as the flushing gas in more detail) is maintained.

The processing program 83 describes that the processing conditions written in the memory 82 are read to the working memory 84, and the control signals are transmitted to the respective portions of the film forming apparatus according to the processing conditions, and are performed by performing the steps described later. Wafer W processing commands. The processing performed by the processing program 83, which describes the processing of the processing temperature to, for example, the process conditions, is described before the supply of the BTBAS gas and the O ₃ gas (before the film formation process is performed). Next, the N ₂ gas having the same flow rate of the total gas supplied in the process is supplied to the vacuum container 1 and the respective pressures are detected by the first process pressure detecting means 66a (66b) and the pressure detecting means 67. The value of the opening of the first valve 65a and the degree of opening of the second valve 65b are adjusted so that the flow rate ratio F of the gas discharged from the first exhaust passage 63a and the second exhaust passage 63b in this state and the inside of the vacuum vessel 1 are adjusted. The pressure (vacuum degree) P can reach the set value, and after the gas flow to be supplied to the wafer W is stabilized (after the steady state is formed), the BTBAS gas and the O ₃ gas are supplied to perform a film forming process to be described later. When the flow rate ratio F of the exhaust gas and the pressure P in the vacuum vessel 1 are adjusted as described above, the first step of adjusting the pressure P in the vacuum vessel 1 by the first valve 65a is performed, and the second valve 65b is performed next. The second step of adjusting the flow ratio F of the exhaust gas, and then repeating the first step, the pressure P of the vacuum vessel 1 and the flow ratio F of the exhaust gas are repeatedly adjusted by the valves 65 until the passage Specific time (number of times) (specific steps are detailed later). In addition, although this example illustrates the case where the flow rate ratio F of the exhaust gas is different for each process condition, it is also possible to have a common flow ratio F of the exhaust gas for each process condition.

The timer 86 is used to set the repetition time (return number) of the valve 65 by the processing program 83. For example, the repetition time may be an automatic setting, or may be performed by, for example, an operator, for example, each process condition. Set its repeat time.

The processing program 83 can be mounted in the control unit 80 from a memory (memory portion 85) such as a hard disk, a compact disk, a magneto-optical disk (MO), a memory card, or a floppy disk.

Next, the action of the above embodiment will be described with reference to Figs. 10 to 15 . First, the process conditions are read from the memory 82, the gate valve not shown in the figure is opened, and the wafer arm W is transferred from the outside to the concave portion 24 of the turntable 2 via the transfer port 15 using the transfer arm 10 (step S11). Here, when the concave portion 24 is stopped at the position facing the conveyance port 15, the lift pin 16 is lifted and lowered from the bottom side of the vacuum container 1 through the through hole of the bottom surface of the concave portion 24 as shown in FIG. 8 to perform the transfer. The turntable 2 is intermittently rotated to transfer the wafer W, and the wafers W are each placed in the five recesses 24 of the turntable 2. Next, the turntable 2 is rotated clockwise at the same rotation speed as in the film forming process (step S12), and the pressure P in the vacuum vessel 1 is adjusted in step S13 (steps S21 to S28) in accordance with the following description. The flow rate of the exhaust gas is adjusted by the F ratio.

First, the first valve 65a and the second valve 65b are fully opened, and the inside of the vacuum vessel 1 is evacuated, and the heater W is heated by the heater unit 7 to a set temperature (for example, 300 ° C) (step S21). In detail, the turntable 2 is heated to, for example, 300 ° C by the heater unit 7 in advance, and the wafer W is placed on the turntable 2 to be heated to the set temperature as described above. Then, N ₂ gas having the same flow rate of the total gas flow rate supplied to the inside of the vacuum vessel 1 in the film formation described later is supplied into the vacuum vessel 1. At this time, as shown in FIG. 12A, N ₂ gas of, for example, 20,000 sccm and 20,000 sccm is supplied from each of the separation gas nozzles 41 and 42, and, for example, 100 sccm and 10000 sccm are supplied from the first reaction gas nozzle 31 and the second reaction gas nozzle 32, respectively. The N ₂ gas is supplied from the nozzles 31, 32, 41, 42 to be equivalent to the gas component in the film formation. Further, N ₂ gas having a specific flow rate is supplied from the separation gas supply pipe 51 and the flushing gas supply pipe 72 to the center portion region C and the aforementioned narrow space. Further, the pressure set value is set to P1, for example, 1067 Pa (8 Torr), and the flow rate ratio set value is set to F1, for example, 1.5 to satisfy the set value of the process condition (step S22). Next, the timer 86 is adjusted and set to repeat the time t1 of the steps S24 to S27 described later (step S23).

Next, as shown in Fig. 13, the degree of opening (A1) of the first valve 65a is adjusted so that the pressure P in the vacuum vessel 1 reaches the pressure set value P1 of, for example, 1067 Pa (8 Torr) (step S24). Specifically, the degree of opening of the first valve 65a is reduced so that the flow rate of the gas flowing through the first exhaust passage 63a is reduced. Then, based on the pressure difference (ΔPa1) between the pressure on the upstream side of the first valve 65a and the pressure on the downstream side (before and after the valve) and the pressure difference (ΔPb1) before and after the second valve 65b, the flow is calculated in the exhaust passage 63. The flow rate of the gas (Qa1, Qb1). Then, the gas flow rate ratio F (Qb1/Qa1) is obtained based on the gas flow rate to determine whether the flow rate ratio F has reached the set value F1 (step S25), and when the set value F1 has been reached, the process proceeds to a step to be described later. Film formation treatment of S14. When the flow rate comparison set value F1 is large, the opening degree (B1) of the second valve 65b is decreased so that the flow rate ratio approaches the set value F1 (step 26).

Then, it is confirmed whether or not the pressure P deviates from the set value P1 (step S27), and if it is not shifted, the process proceeds to the film forming process of step S14. When the pressure deviates from the set value P1, it is first determined whether the time taken for the process (step S24 to step S27) has reached the reset time t1 set in the step S23 (step S28), and the repeated time is reached. In the case of t1, the flow rate ratio F and the pressure P in step S25 or step S27 are each set to the set value F1 and the set value P1, and the processes of steps S24 to S27 are repeated. Specifically, for example, when the degree of opening of the valve 65b is adjusted (step S26) such that the pressure P is higher than the set value P1, the degree of opening of the valve 65a is increased, so that the pressure P is lower than the set value P1. Then, the degree of opening of the valve 65a is reduced. Further, when the degree of opening of the valve 65a is adjusted (step S24) such that the flow ratio F is higher than the set value F1, the degree of opening of the valve 65b is reduced, so that the flow ratio F is lower than the set value F1, The degree of opening of the large valve 65b. The degree of opening of the valves 65a, 65b is alternately adjusted as described above, as shown in the aforementioned FIG. 13, whereby the pressure P and the flow ratio F are each close (converged) to their set values P1, F1.

When the steps S24 to S27 are performed such that the pressure P and the flow rate ratio F respectively reach the set values P1 and F1, the gas flow rates respectively discharged from the exhaust passages 63a and 63b are 20 sccm and 30 sccm, as shown in the aforementioned FIG. 12B. As shown in the figure, the degree of opening of the first valve 65a and the degree of opening of the second valve 65b are set to, for example, A2 and B2. On the other hand, even if the time limit is exceeded in the step S28, since the pressure P is adjusted by the first valve 65a and the flow rate ratio F is adjusted by the second valve 65b, As described above, the amount of deviation between the adjusted pressure P and the flow rate ratio F and the set values P1 and F1 is gradually reduced as the step is repeated. Therefore, the pressure P and the flow ratio F at the time when the time limit is exceeded are very close to the set values P1 and F1. Therefore, even if the time limit of execution is exceeded, the subsequent process of the subsequent film forming process (step S14) can be performed.

Then, the degree of opening of the first valve 65a and the degree of opening of the second valve 65b are finely adjusted to maintain the pressure P and the flow rate ratio F set by the above-described process. In this example, the inner peripheral wall is cut and expanded at the inner peripheral wall of the container body 12 along the lower side space of the second top surface 45 where the reaction gas nozzles 31 and 32 are provided, and the exhaust port is opened. Since the 61 and 62 are located below the wide space, the pressure in the space below the second top surface 45 is lower than the pressure values of the narrow space on the lower side of the first top surface 44 and the front center portion C.

Then, it is confirmed by the temperature sensor not shown in the figure whether the temperature of the wafer W has reached the set temperature, and it is confirmed whether the pressure P of the vacuum vessel 1 and the flow ratio F of the chlorine discharge gas are stably maintained at a steady state. . Next, as shown in FIG. 14A, the gas supplied from the first reaction gas nozzle 31 and the second reaction gas nozzle 32 is switched from N ₂ gas to BTBAS gas and O ₃ gas (step S14). At this time, as shown in FIG. 14B, the gas is switched so as not to change the total flow rate of the gas supplied to the inside of the vacuum vessel 1 (the flow rate of the gas supplied from each of the nozzles 31, 32). By the gas switching described above, fluctuations in the gas flow to the wafer W can be suppressed, and pressure fluctuations in the vacuum vessel 1 can be suppressed. Therefore, even if the degree of opening of the first valve 65a and the degree of opening of the second valve 65b are not adjusted again as in the above-described steps S21 to S28, as shown in Fig. 12C, the pressure P and the exhaust in the vacuum vessel 1 can be made. The gas flow rate ratio F is maintained at the set values P1 and F1. Therefore, when the gas is switched, the inside of the vacuum vessel 1 can be maintained in a stable state, and as shown in Fig. 15, the gas flow in the plane or even between the faces of the wafer W can be stabilized. Further, in the film formation described above, the degree of opening of the valve 65 is finely adjusted so that the flow rate ratio F of the air flow discharged from the exhaust passages 63a, 63b is maintained at the set value F1, and thus the air flow supplied to the wafer W is performed. There is no disorder and it can be maintained in this steady state. In addition, FIG. 14A schematically shows the flow rate of each gas.

Then, by rotating the turntable 2, the wafer W alternately passes through the first processing region 91 and the second processing region 92 to adsorb the BTBAS gas, and secondly adsorbs the O ₃ gas to cause the BTBAS molecules to be oxidized to form a layer or A plurality of layers of ruthenium oxide molecules are layered in this order to form a ruthenium oxide layer having a specific film thickness.

At this time, N ₂ gas is supplied between the first processing region 91 and the second processing region 92, and a separation gas (N ₂ gas) is also supplied to the central portion C, and the opening degree of the valve 65 is further performed. The micro-adjustment is such that the gas flow supplied to the wafer W is stabilized, so that the respective gases can be discharged without mixing the BTBAS gas and the O ₃ gas. Further, in the separation region D, since the gap between the curved portion 46 and the outer end surface of the turntable 2 is narrow as described above, the BTBAS gas and the O ₃ gas are not mixed with each other via the outside of the turntable 2. Therefore, the atmosphere of the first processing region 91 can be completely separated from the atmosphere of the second processing region 92, and the BTBAS gas can be discharged to the exhaust port 61, and the O ₃ gas can be discharged to the exhaust port 62. As a result, the BTBAS gas and the O ₃ gas do not mix with each other in the atmosphere or on the wafer W.

In addition, in this example, the lower side of the turntable 2 is flushed by the N ₂ gas, so there is no need to worry that the gas flowing into the exhaust region E will sneak into the lower side of the turntable 2 so that, for example, the BTBAS gas flows into the O ₃ gas. Supply area. After the film forming process is completed, the supply of gas is stopped, and vacuum evacuation in the vacuum vessel 1 is performed (step S15), and then the rotary turret 2 is stopped and the respective arms are sequentially moved by the transfer arm 10 to carry out the opposite operation. The circle W is carried out (step S16).

Here, an example of the processing parameters is described in the case where the wafer W having a diameter of 300 mm is used as the substrate to be processed, and the number of revolutions of the turntable 2 is, for example, 1 rpm to 500 rpm, and N ₂ from the separation gas supply pipe 51 at the center of the vacuum vessel 1 The gas flow rate is, for example, 5000 sccm. Moreover, the number of cycles of the supply of the reaction gas to the one wafer W, that is, the number of times the wafer W passes through the processing regions 91 and 92 varies depending on the target film thickness, and the number of times is, for example, 600 times.

According to the above embodiment, the processing regions 91 and 92 to which the reaction gases (BTBAS gas and O ₃ gas) which are mutually reacted are supplied in the direction of rotation of the turntable 2 in the common vacuum vessel 1 are provided by the turntable. 2, the wafer W is sequentially passed through the processing regions 91, 92 to form a thin film by laminating a plurality of reaction product layers, wherein a separation region for supplying separated gas is interposed between the processing regions 91, 92. D, at the same time, the first exhaust passage 63a and the second exhaust passage 63b are provided at the positions of the exhaust ports 61 and 62 to separate the respective reaction gases and exhaust them. Then, the degree of opening of the first valve 65a and the degree of opening of the second valve 65b are adjusted such that the gas flow ratio F discharged from the exhaust passages 63a, 63b reaches the set value F1, and the pressure P in the vacuum vessel 1 reaches Set value P1. Therefore, a stable and appropriate air flow can be formed on both sides of the separation region D, and the flow of the reaction gas (BATAS, O ₃ ) at the surface of the wafer W is fixed, so that the adsorption state of the BTBAS gas is stabilized while making O _The gas is also stabilized by the oxidation reaction of the adsorbed molecules, and as a result, a film having a uniform film thickness and a uniform film quality can be obtained in the plane and between the faces of the wafer W.

Further, since the deviation of the exhaust gas on both sides of the separation region D can be prevented, it is possible to prevent the BTBAS gas and the O ₃ gas from passing through the separation region D to be mixed with each other, thereby suppressing generation of a reaction product outside the surface of the wafer W, Therefore, the generation of fine particles can be suppressed.

When the flow rate ratio F of the exhaust gas is calculated, the pressure difference between the front and rear (upstream side and downstream side) of the first valve 65a and the pressure difference between the front and rear of the second valve 65b are calculated as described above. The flow rate of the gas passages 63a, 63b can accurately calculate the flow ratio F. Therefore, even if there is an individual difference in the exhausting ability between the vacuum pumps 64a and 64b due to the accumulation of the product inside or deterioration due to the use time, the flow rate ratio F can be accurately calculated.

Further, when the flow rate ratio F of the exhaust gas is adjusted to the set value F1 as described above, the reaction gas which is actually formed is not N ₂ gas, and when the flow rate ratio F is adjusted, that is, the vacuum container When the gas flow in 1 is disordered, the reaction gas does not contact the wafer W, so that the influence of the reaction gas of the gas flow disorder on the wafer W can be suppressed. Further, when the flow rate is adjusted as described above, the amount of the N ₂ gas in the reaction gas is distributed in advance, and then the reaction gas is passed in place of the N ₂ gas. Therefore, when the reaction gas is started to flow after the flow rate ratio F is completed, the vacuum vessel 1 is opened. There is no airflow disturbance in the air, and the total gas flow rate and the gas flow rate discharged from the exhaust passages 63a and 63b do not change, so that the initial reaction (switching the gas to the reaction gas by the N ₂ gas) can also be suppressed. The airflow is disordered.

Further, as described above, a plurality of wafers W are provided in the rotation direction of the turntable 2, and the turntable 2 is rotated to sequentially pass the first processing region 91 and the second processing region 92 to perform so-called ALD (or MLD) enables film formation at high productivity. Next, a separation region D having a lower top surface is provided between the first processing region 91 and the second processing region 92 in the rotation direction, and is formed by being separated from the vacuum vessel 1 by the rotation center portion of the turntable 2 The center portion region C discharges the separation gas toward the periphery of the turntable 2, and causes the separation gas diffused to both sides of the separation region D and the separation gas ejected from the center portion region C to be together with the reaction gas via the periphery of the turntable 2 Since the gap between the peripheral walls of the vacuum vessel is discharged, it is possible to prevent the two reaction gases from mixing with each other, and as a result, the film formation treatment can be performed favorably, so that the reaction product is not generated (or actively suppressed) on the turntable 2 to suppress the particles. The production. Further, the present invention is also applicable to a case where one wafer W is placed on the turntable 2.

Further, in the above-described example, in step S21, the first valve 65a and the second valve 65b are fully opened to perform vacuuming. However, for example, the degree of opening of the second valve 65b and the flow rate of the gas discharged from the second exhaust passage 63b are calculated in advance. In the relationship, for example, when the first valve 65a is adjusted in step S24, the second valve 65b can be adjusted to the extent of the opening. At this point, the pressure value adjustment and the flow ratio adjustment can be quickly performed. Further, since the adjustment amount (variation amount) of the pressure and the flow rate ratio is small, the reaction gas can be used to adjust the pressure to flow ratio without using the N ₂ gas.

Further, in the above example, the N ₂ gas flow rate at the time of adjusting the pressure P to the flow rate ratio F is equal to the flow rate of the reaction gas when the gas is subsequently switched to perform film formation, but it only needs to be an almost equal flow rate (for example, ±5) Around %, the airflow disorder to the wafer W can be suppressed as described above.

In the present embodiment, when the time limit of the step S28 is exceeded, the pressure P and the flow rate ratio F at this time are very close to the respective set values P1 and F1, and the subsequent processes are performed (step S14 and later). At this time, for example, a warning signal is displayed and the subsequent film forming process is stopped.

(Second embodiment)

In the first embodiment, the flow rate ratio F between the pressure P in the vacuum vessel 1 and the exhaust passages 63a, 63b is controlled only by adjusting the degree of opening of the valves 65a, 65b, but it can be further adjusted by adjusting the rotational speed of the vacuum pump 64b. The exhaust flow rate (exhaust capacity) of the vacuum pump 64b is controlled as described above.

As shown in Fig. 16, the vacuum pump 64b is connected to a current transformer 68 as a mechanism for adjusting the exhaust gas flow rate of the vacuum pump 64b, and the current converter 68 adjusts the current value flowing through the vacuum pump 64b. The rotation speed (exhaust flow rate) of the vacuum pump 64b is adjusted. Therefore, in the present example, the process conditions also include the rotational speed R of the vacuum pump 64b. In addition, other device configurations, operations, and the like are the same as those of the above-described embodiment, and thus the description thereof will be omitted.

Then, when the pressure is controlled by the first valve 65a and the flow rate is controlled by the second valve 65b and the time limit is exceeded (step S28), as shown in Fig. 17, the rotation speed R of the vacuum pump 64b is adjusted. 3 steps (step S29). That is, for example, after the flow rate ratio F is adjusted by the second valve 65b (step S26), the pressure P is confirmed (step S27), and when the pressure P does not reach the set value P1, the exhaust of the vacuum pump 64b is adjusted. The amount until the pressure P reaches the set value P1. Specifically, when the pressure P is equal to or higher than the set value P1 (that is, the amount of exhaust of the vacuum pump 64b is insufficient), the current value of the converter 68 is set to increase the rotational speed R of the vacuum pump 64b to increase the exhaust of the vacuum pump 64b. The amount, conversely, when the pressure P is lower than the set value P1, the rotation speed R of the vacuum pump 64b is reduced to reduce the displacement of the vacuum pump 64b.

Next, the reset time t1 is set again by the timer 86, and the above-described respective steps S24 to S27 are repeated. When the pressure P of the vacuum pump 64b is adjusted and the pressure P and the flow ratio F reach the set values P1 and F1 in the step S25 or the step S27, the process proceeds to the film forming process (step S14), and the vacuum pump 64b is adjusted. If the set values P1 and F1 are not reached after the rotation speed R, the step S29 is again performed (the rotation speed R of the vacuum pump 64b is adjusted). Next, until the repetition time t1 is exceeded or until the pressure P and the flow rate ratio F have respectively reached the set values P1 and F1, the steps S24 to S28 are repeatedly performed. Further, when the pressure P and the flow rate ratio F have not reached the set values P1 and F1 beyond the repetition time t1, the degree of opening of the valves 65a and 65b and the number of revolutions R of the vacuum pump 64b are adjusted, as in the above-described embodiment. The pressure P and the flow ratio F will each approach (converge) to their set values P1 and F1, so that the pressure P and the flow ratio F will be close to their set values P1 and F1 when the time limit is exceeded.

Therefore, if the time limit is exceeded, the subsequent film formation process can be performed (step S14).

According to this embodiment, in addition to the aforementioned effects, the following effects can be obtained. In other words, it is only possible to adjust the pressure P and the flow rate ratio F within the set time (t1) by adjusting the degree of opening of the first valve 65a and the opening degree of the second valve 65b, and then adjusting the rotation speed R of the vacuum pump 64b. The degree of opening of the valves 65a, 65b is such that, for example, when the exhaust capacities of the vacuum pumps 64a, 64b have individual differences, the pressure P and the flow ratio F can be set to reach the set values P1, F1, respectively. In other words, by adjusting the rotation speed R of the vacuum pump 64b together with the degree of opening of the valves 65a and 65b, it can be said that the pressure P and the flow rate ratio F can be set in a wide range.

In addition, although the example adjusts the rotation speed R of the vacuum pump 64b, the converter may be connected to the vacuum pump 64a to adjust the rotation speed R of the vacuum pump 64a instead of the vacuum pump 64b, or the rotation speed R may be adjusted for the two vacuum pumps 64. . For the case where the two vacuum pumps 64 are adjusted in the rotation speed R, for example, the rotation speeds R of the vacuum pumps 64a, 64b may be simultaneously adjusted in the above step S29, or when the rotation speed R of the vacuum pump 64b is adjusted (step S29) and the execution time limit is exceeded (steps) S28), the rotation speed R of the other vacuum pump 64a is adjusted, and the repetition time t1 is set again (step S23) while adjusting the opening degree of the valves 65a, 65b (steps S24 to S28).

Further, for example, in step S28, step S29 is performed when the time limit is exceeded, but step S29 may be performed between, for example, step S27 and step S28, and the degree of opening of the valves 65a, 65b may be reversed. At the same time, the rotational speed of the vacuum pump 64b is also adjusted. Further, in the first step S27 (before the steps are repeated), for example, in the case where the pressure P is much larger than the set value P1, the step S29 may be performed before the steps S24 to S27 are repeatedly performed, and then repeatedly Each of the above steps S24 to S27 is performed.

In each of the above-described examples, the reaction gas which reacts with each other is discharged from the two exhaust passages 63a and 63b, and the effect of suppressing the reaction product in the exhaust passage 63 and the inside of the vacuum pump 64 can be obtained. When the temperature in the exhaust passage 63 and the inside of the vacuum pump 64 are low and the reaction between the reaction gases is less likely to occur, as shown in Fig. 18, the vacuum pumps 64a and 64b may be formed in common. At this point, the effect of reducing the cost of the device can be obtained.

As the processing gas to which the present invention is applied, in addition to the above examples, DCS [dichlorodecane], HCD [hexachlorodimethane], TMA [trimethylaluminum], 3DMAS [tris(dimethylamino)] may also be mentioned. ) decane], TEMAZ [tetrakis(ethylmethylamino acid)-zirconium], TEMAH [tetrakis(ethylmethylamino acid)-oxime], Sr(THD) ₂ [bis(tetramethylheptanedione) Acid)-锶], Ti(MPD)(THD) [methylglutaric acid) (bis-tetramethylheptanedionate)-titanium], monoamine-based decane, and the like.

Further, at the top surface 44 of the separation region D, preferably, the width of the rotation direction is closer to the upstream side portion of the turntable 2 in the rotation direction with respect to the separation gas nozzles 41, 42. Big. The reason is that the flow from the upstream side to the separation region D due to the rotation of the turntable 2 is faster as it approaches the outer edge. From this point of view, it is a good idea to form the convex portion 4 in a fan shape as described above.

Then, as in the separation gas nozzle 41 shown in FIGS. 19A and 19B, the first top surface 44 of each of the separation gas nozzles 41 (42) is formed with a narrow space, for example, a wafer W having a diameter of 300 mm. In the case of the substrate to be processed, it is preferable that the width L of the portion where the center WO of the wafer W passes in the direction of rotation of the turntable 2 is 50 mm or more. In order to effectively prevent the reaction gas from intruding from below the convex portion 4 (narrow space) from the both sides of the convex portion 4, when the width dimension L is too short, the first top surface 44 and the turntable 2 must be correspondingly reduced. Distance h. Further, when the distance h between the first top surface 44 and the turntable 2 is set to a certain size, the farther from the center of rotation of the turntable 2, the faster the speed of the turntable 2 is, so the more away from the center of rotation Far, the width dimension L required to obtain the effect of preventing the intrusion of the reaction gas is longer. According to the foregoing point of view, when the width dimension L of the portion where the center WO of the wafer W passes is less than 50 mm, the distance h between the first top surface 44 and the turntable 2 needs to be considerably reduced, and thus the rotation is rotated. At the time of the stage 2, it takes a lot of effort to actively suppress the vibration of the turntable 2 to prevent the turntable 2 or the wafer W from striking the top surface 44. Further, the higher the rotational speed of the turntable 2, the more easily the reaction gas intrudes from the upstream side of the convex portion 4 to the lower side of the convex portion 4, so when the width dimension L is less than 50 mm, it must be lowered. The rotation speed of the rotary table 2 is not a good strategy from the viewpoint of production capacity. Therefore, the width L is preferably 50 mm or more, but the effect of the present invention cannot be obtained not by 50 mm or less. That is, the width dimension L is preferably from 1/10 to 1/1 of the diameter of the wafer W, and more preferably about 1/6 or more.

Further, in the separation gas supply mechanism of the present invention, the lower top surface 44 located on both sides in the rotation direction is required, but the configuration is not limited to the configuration in which the convex portions 4 are provided on both sides of the separation gas nozzles 41 and 42. As shown in FIG. 20, a flow chamber 47 for separating gas is formed inside the convex portion 4 in the radial direction of the turntable 2, and a plurality of gas discharge holes 40 are formed in the longitudinal direction at the bottom of the flow chamber 47. structure.

The top surface 44 of the separation region D is not limited to a flat surface, and may have a concave shape as shown in Fig. 21A, a convex shape as shown in Fig. 21B, or a wavy structure as shown in Fig. 21C.

The heating means for heating the wafer W is not limited to a heater using a resistance heating element, and a lamp heating device may be used instead of the lower side of the turntable 2, or may be provided on the upper side of the turntable 2 Or set on the upper and lower sides. Further, when the reaction gas system is subjected to a reaction at a low temperature (for example, normal temperature), it is not necessary to provide the heating means.

Here, other examples of the arrangement of the processing regions 91 and 92 and the separation region D other than the above-described embodiments will be described. FIG. 22 shows an example in which the second reaction gas nozzle 32 is provided on the upstream side in the rotation direction of the turntable 2 of the transfer port 15, and the same effect can be obtained by the above arrangement. Further, it has been described above that the separation region D may be a structure in which the fan-shaped convex portion 4 is divided into two portions in the circumferential direction and the separation gas nozzle 41 (42) is provided at the middle thereof, and 23 is a top view of an example of this structure. In this case, the distance between the fan-shaped convex portion 4 and the separation gas nozzle 41 (42) and the size of the fan-shaped convex portion 4 are set to be equal to the discharge flow rate of the separation gas and the discharge flow rate of the reaction gas. The separation region D is made effective to the size of its separation.

In the above embodiment, the first processing region 91 and the second processing region 92 correspond to a region having a top surface higher than the top surface of the separation region D. In the present invention, the first processing region 91 and the second processing region At least one of the processing regions 92 may be configured to have a top surface having the same height as the first top surface 44 of the separation region D, and the structure is the same as the separation region D in the rotation direction of the reaction gas supply mechanism. On both sides, facing the turntable 2, a space is formed between the turntable 2 and the turntable 2 to prevent gas intrusion and has a top surface on both sides of the swinging direction D (the second top) Face 45) lower top surface. FIG. 24 shows an example of the configuration. In the second processing region (the region in which the O ₃ gas is adsorbed in the present example) 92, the second reaction gas nozzle 32 is provided on the lower side of the fan-shaped convex portion 4. Further, the second processing region 92 has the same configuration as the separation region D except that the second reaction gas nozzle 32 is provided instead of the separation gas nozzle 41 (42).

In the present invention, it is necessary to provide a lower top surface (first top surface) 44 for forming a narrow space on both sides of the separation gas nozzle 41 (42), but it is also possible to use the reaction gas nozzle 31 (32) as shown in FIG. A lower top surface is also provided on both sides, and the top surfaces are continuously formed, that is, in addition to the portion where the separation gas nozzle 41 (42) and the reaction gas nozzle 31 (32) are provided, facing the turntable The same effect can be obtained by the structure in which the convex portion 4 is integrally provided in the region of 2. Viewed from different angles, the structure extends the first top surface 44 on either side of the separation gas nozzle 41 (42) to the example of the reaction gas nozzle 31 (32). At this time, the separation gas system is diffused to both sides of the separation gas nozzle 41 (42), and the reaction gas system is diffused to both sides of the reaction gas nozzle 31 (32), and the two gases will be on the lower side of the convex portion 4 (narrow space). The flow is converged, and the gases are discharged from the exhaust port 61 (62) between the separation gas nozzle 42 (41) and the reaction gas nozzle 31 (32).

In the above embodiment, the rotary shaft 22 of the turntable 2 is located at the center of the vacuum vessel 1, and the space between the center portion of the turntable 2 and the upper surface of the vacuum vessel 1 is flushed by the separated gas. However, the present invention may also be The structure shown in FIG. In the film forming apparatus of Fig. 26, the bottom surface portion 14 of the central portion of the vacuum chamber 1 is formed with the storage space 100 in which the driving portion is formed downward, and the concave portion 100a is formed in the upper portion of the central portion of the vacuum container 1 in the vacuum chamber. A pillar 101 is interposed between the bottom of the storage space 100 at the center of the container 1 and the upper portion of the recess 100a of the vacuum vessel 1 to prevent the BTBAS gas from the first reaction gas nozzle 31 and the second reaction gas nozzle. 32 O ₃ gas is mixed with each other through the center portion.

Regarding the mechanism for rotating the turntable 2, a swivel sleeve 102 is provided around the strut 101, and an annular turntable 2 is provided along the swivel sleeve 102.

Next, a drive gear portion 104 that can be driven by the motor 103 in the housing space 100 is provided, and the drive gear portion 104 is rotated by the gear portion 105 formed on the outer periphery of the lower portion of the rotary sleeve 102. The rotary sleeve 102. Symbols 106, 107 and 108 are bearing portions. Further, a flushing gas supply pipe 74 is connected to the bottom of the storage space 100, and a flushing gas supply pipe 75 is connected to the upper portion of the vacuum vessel 1 for supplying flushing gas to the side surface of the recessed portion 100a and the upper end portion of the rotary sleeve 102. Between the spaces. 26 shows an opening portion for supplying a flushing gas to the space between the side surface of the concave portion 100a and the upper end portion of the rotary sleeve 102 only at the left and right sides, but preferably, the opening portion (flushing gas) should be considered and designed. The number of the supply ports is arranged such that the BTBAS gas and the O ₃ gas do not mix with each other via the vicinity of the rotary sleeve 102.

In the embodiment of Fig. 26, the space between the side surface of the recessed portion 100a and the upper end portion of the rotary sleeve 102 corresponds to the separation gas discharge hole as viewed from the side of the turntable 2, and then the separation gas discharge hole, The swivel sleeve 102 and the stay 101 constitute a central portion region located at the center of the vacuum vessel 1.

The present invention is not limited to the use of two kinds of reaction gases, and may be applied to a case where three or more kinds of reaction gases are sequentially supplied to a substrate. In this case, for example, gas nozzles such as a first reaction gas nozzle, a separation gas nozzle, a second reaction gas nozzle, a separation gas nozzle, a third reaction gas nozzle, and a separation gas nozzle are sequentially provided in the circumferential direction of the vacuum chamber 1, and The separation region including the separation gas nozzles may be configured as in the above embodiment. At this time, an exhaust passage, a pressure gauge, a valve are provided at each of the treatment regions connected to the supply of the gases, and the exhaust flow rate (pressure difference before and after the valve) is adjusted for each treatment region as described above. .

The substrate processing apparatus using the above film forming apparatus is as shown in FIG. In Fig. 27, reference numeral 111 denotes a sealed transfer container which can store, for example, 25 wafers W, and is called a wafer cassette, and reference numeral 112 denotes an atmospheric transfer chamber in which the transfer arm 113 is provided, and symbols 114 and 115 can be used in an atmospheric atmosphere. A load lock chamber (vacuum preparation chamber) for switching the atmosphere between the vacuum atmosphere, a symbol 116 is provided with a vacuum side transfer chamber of the double-arm transfer arm 117, and reference numerals 118 and 119 are the film forming apparatuses of the present invention. The transfer container 111 is transported from the outside to a loading/unloading cassette provided with a mounting table (not shown), and is connected to the atmospheric transfer chamber 112, and then the lid body is opened and borrowed by an opening and closing mechanism not shown. The wafer W is taken out from the transfer container 111 by the transfer arm 113. Next, it is carried into the load lock chamber 114 (115), and the chamber is switched from the atmosphere to the vacuum atmosphere, and then the wafer W is taken out by the transfer arm 117 and carried into the film forming apparatuses 118, 119. In any of the above, the film forming treatment described above is carried out. As described above, by providing a film forming apparatus of the present invention having a plurality of (for example, two), for example, five sheets of processing, so-called ALD (MLD) can be performed with high productivity.

In each of the above examples, in order to stabilize the flow of the respective reaction gases in the vacuum chamber 1, the degree of opening of the valves 65a and 65b which are respectively disposed in the exhaust passages 63a and 63b is adjusted so as to flow through the two exhaust passages. The flow rate ratio F of the exhaust gas in 63a, 63b reaches the set value F1, but the degree of opening of the valves 65a, 65b can also be adjusted to reduce the pressure difference between the respective processing regions 91, 92. At this time, the specific film forming apparatus and film forming method will be described with reference to FIGS. 28 to 31 which will be described later. The same components as those in the above-mentioned FIG. 1 are denoted by the same reference numerals, and their description is omitted.

In this example, as shown in FIG. 28, the first processing pressure detecting means 66a and the second processing pressure detecting means 66b provided in the exhaust passages 63a, 63b are each for measuring the first processing region 91 and the second processing. The pressure in area 92. Further, in this example, it is not necessary to provide the first pressure detecting mechanism 67a and the second pressure detecting mechanism 67b in each of the exhaust passages 63a and 63b.

Further, as shown in FIG. 29, in place of the gas flow rate ratio F described above, the pressure difference Δp allowed for the processing regions 91 and 92 is stored in the memory 82 in accordance with each process condition. That is, when the pressure difference Δp between the processing regions 91, 92 in the vacuum vessel 1 is large, the reaction gas may have a higher pressure from the separation region D between the processing regions 91, 92. The tendency of the region to flow to a region having a low pressure may also cause the airflow to be unstable. Therefore, in the present embodiment, the airflow is stabilized by suppressing the pressure difference Δp between the respective processing regions 91 and 92.

In the present embodiment, when the airflow is stabilized, as in the above-described example, as shown in Fig. 30, before the supply of the reaction gas is started in step S13, the degree of opening of each of the valves 65a and 65b is adjusted by using nitrogen gas. Regarding the method of stabilizing the gas flow, the processing conditions, and the like, the difference from the first embodiment will be described with reference to Fig. 31, and the pressure setting value P1 and the pressure between the processing regions 91 and 92 are set in step S22. The set value Δp1 of the difference Δp is set to, for example, 1067 Pa (8 Torr) and 13.3 Pa (0.1 Torr). Next, in step S24, the degree of opening of the valve 65a is adjusted such that the processing pressure in the vacuum vessel 1 (for example, the pressure detection value of the processing pressure detecting mechanism 66a) reaches the set value P1, and in step S25, the reading processing pressure is detected. The measurement results of the mechanisms 66a, 66b determine whether the pressure difference Δp is below the set value Δp1. When the pressure difference Δp is below the set value Δp1, the process proceeds to the film forming process of step S14. When the pressure difference Δp is larger than the set value Δp1, the opening degree of the valve 65b is adjusted so that the pressure difference Δp is reached. The set value Δp1 is equal to or lower (step S26). Then, when the processing pressure reaches the set value P1, the film forming process of the film is started (step S27). If the process pressure does not reach the set value P1, the steps S24 to S27 are repeated in the same manner as the above-described example. The process is until the time limit t1 is exceeded (step S28), or until the pressure difference Δp in step S25 reaches the set value Δp1 or less, or the process pressure in step S27 reaches the set value P1.

Then, the nitrogen gas is switched to the reaction gas to perform the film formation process. However, the pressure difference Δp between the respective processing regions 91 and 92 is equal to or lower than the set value Δp1 by the above steps S21 to S28, or is stably caused to fall thereon. Very close to the value of the set value Δp1, the flow of the reaction gas (BATAS gas, O ₃ gas) in the vacuum vessel 1 can be stabilized. Therefore, the adsorption state of the BTBAS gas on the wafer W can be stabilized, and the oxidation reaction of the adsorption molecules by the O ₃ gas can be stabilized, and the result can be in-plane and surface of the wafer W. A film having a uniform film thickness and a uniform film quality and good film was obtained. Further, since the exhaust gas deviation on both sides of the separation region D can be prevented, it is possible to prevent the BTBAS gas and the O ₃ gas from being mixed with each other via the separation region D. Therefore, generation of a reaction product outside the surface of the wafer W can be suppressed, so that generation of fine particles can be suppressed. Further, since the pressure difference Δp between the processing regions 91 and 92 can be reduced and suppressed, when the wafer W enters the processing region 91 (92) due to, for example, the rotation of the turntable 2, the self-processing is performed. When the region 91 (92) leaves, the wafer W hardly receives the buoyancy from the turntable 2.

Therefore, it is possible to suppress problems such as floating of the wafer W from the concave portion 24 or positional displacement in the concave portion 24, and it is possible to suppress, for example, the wafer W from hitting the top plate 11 or the film formation state being poor.

Further, even if, for example, a difference in the size of the region (processing regions 91, 92) through which the respective reaction gases flow or the concave portion 24 formed in the turntable 2 is affected, gas flow occurs between the respective processing regions 91, 92. In the case of the difference in the degree of difficulty (conductivity), since the pressure difference Δp between the processing regions 91 and 92 is reduced, the influence of the difference in conductivity of the gas flow can be suppressed, and the gas flow can be surely stabilized.

In the foregoing example, when the pressures of the respective processing regions 91 and 92 are measured, the processing pressure detecting mechanisms 66a and 66b are respectively disposed at the exhaust passages 63a and 63b, but may be disposed to communicate with the processing regions 91 and 92, respectively. The area (such as the side wall of the vacuum vessel 1). Further, when the pressure of each of the processing regions 91 and 92 is adjusted, the rotation speed R of the vacuum pump 64 can be adjusted while adjusting the degree of opening of the valves 65a and 65b as described above. Furthermore, the two vacuum pumps 64a, 64b can also be made common. Further, in the above step S24, when the processing pressure in the vacuum chamber 1 is set to the pressure setting value P1, the pressure detection value of the processing pressure detecting means 66a is used as the processing pressure, but the processing pressure detecting means may be used. The pressure detection value of 66b may be additionally provided with a detection mechanism for detecting pressure in the vacuum container 1, and the detection value of the detection mechanism is used.

Further, in the present embodiment, when the airflow is stabilized, the pressure of each of the processing regions 91 and 92 is adjusted instead of adjusting the flow rate ratio F of the exhaust gas. However, the flow rate ratio F of the exhaust gas may be adjusted. The pressure of the treatment zones 91, 92 is also adjusted. Specifically, for example, when the possibility of pressure fluctuation in the vacuum vessel 1 is high, for example, when the reaction gas is started to be supplied into the vacuum vessel 1 (in step S14, when switching from nitrogen gas to the reaction gas), each process is adjusted. The pressure of the regions 91 and 92 is adjusted, and after the film forming process is started and the pressure in the vacuum vessel 1 is stabilized after a certain period of time, the flow rate ratio F of the exhaust gas may be adjusted. At this time, the airflow in the vacuum vessel 1 can be further stabilized, and the floating of the wafer W can be suppressed.

(Third embodiment)

According to the embodiment of the present invention, in the vacuum container including the turntable, the first processing region to which the first reaction gas is supplied and the second processing region to which the second reaction gas is supplied are separated in the rotation direction. A separation region for supplying the separation gas from the separation gas supply mechanism is interposed between the regions, and a turntable provided with a plurality of substrates is rotated in the rotation direction, and is laminated by the first reaction gas and the second reaction gas. The reaction product layer is taken out to form a film.

Then, when the process is performed, the exhaust port is located in the separation region of the first processing region and the downstream side (relative to the first processing region) adjacent to the rotation direction when viewed from the center of rotation of the turntable. The first exhaust passage between the first exhaust passage and the center of rotation of the turntable are located in the second processing region and a separate region adjacent to the downstream side of the swing direction (relative to the second processing region) The exhaust ports of the second exhaust passage are vacuum-exhausted, and the exhaust system (exhaust passage, pressure control device, and vacuum exhaust mechanism) are independent of each other, so the first reaction gas and the first 2 The reaction gas does not have to be mixed with each other in the exhaust system, so that no reaction product is produced in the exhaust system (or the amount generated is very small).

Further, the reaction is blocked by providing a top surface on both sides of the separation direction of the separation gas supply mechanism for forming a narrow space between the rotary table and the separation gas from the separation region to the treatment region side. The gas enters the separation region, and is disposed in the center portion of the vacuum container in order to separate the atmosphere between the first processing region and the second processing region, and is formed to eject the separation gas toward the substrate mounting surface side of the turntable. The central portion of the hole ejects the separation gas toward the periphery of the turntable. As a result, it is possible to prevent the different reactive gases from being mixed with each other through the central portion region, and it is possible to perform a good film formation treatment without causing a reaction product (or positive suppression) at all, so that generation of fine particles can be suppressed.

As shown in FIG. 32 (a cross-sectional view taken along line I-I' in FIG. 34), the film forming apparatus according to the embodiment of the present invention includes a flat vacuum container 201 having a circular shape in plan view, and a vacuum container provided in the vacuum container. Within the 201 and its center of rotation is the turntable 202 located at the center of the vacuum vessel 201. The vacuum vessel 201 is a structure in which the top plate 211 can be separated by the container body 212. The top plate 211 is urged toward the container body 212 side by a sealing member (for example, an O-ring 213) mounted on the container body 212 to maintain an airtight state by its internal decompression state. When the top plate 211 is to be separated from the container body 212, it is lifted upward by a drive mechanism not shown.

The turntable 202 is fixed to a cylindrical axial portion 221 at a central portion thereof, and the axial portion 221 is fixed to an upper end portion of the rotary shaft 222 that extends in the vertical direction. The rotary shaft 222 passes through the bottom surface portion 214 of the vacuum vessel 201, and its lower end portion is attached to a drive portion 223 that can rotate the rotary shaft 222 about a vertical axis (clockwise direction in this example). The rotary shaft 222 and the drive unit 223 are housed in a cylindrical casing 220 having an opening in the upper direction. The housing 220 is hermetically mounted on the lower side of the bottom surface portion 214 of the vacuum container 201 so that the internal atmosphere of the housing 220 and the external atmosphere are maintained in an airtight state.

The surface of the turntable 202 is provided with a circular recess 224 in which a plurality of (for example, five) substrates (wafers W) are placed in the rotation direction (circumferential direction) as shown in FIGS. 33 and 34. In addition, for convenience, the wafer W is drawn in only one recess 224 in FIG. 35A and 35B are development views in which the turntable 202 is cut along a concentric circle and then expanded laterally. As shown in FIG. 35A, the diameter of the recess 224 is slightly larger than the diameter of the wafer W (for example, 4 mm), and The depth system is set to be equal to the size of the thickness of the wafer W. Therefore, when the wafer W is placed in the concave portion 224, the surface of the wafer W and the surface of the turntable 2 (the region where the wafer W is not placed) are aligned. Since the difference in height between the surface of the wafer W and the surface of the turntable 202 is excessive due to the pressure variation of the step portion, the uniformity of the in-plane thickness of the film can be made uniform, and the surface of the wafer W and the turntable It is preferred that the height of the surface of 202 is high. The height of the surface of the wafer W and the surface of the turntable 202 is such that the height is equal to or less than 5 mm. Preferably, the height difference between the two surfaces is close to zero according to the processing accuracy. . A through hole (not shown) is formed in the bottom surface of the recessed portion 224. The through hole is formed by, for example, three lift pins described later, and supports the inner surface of the wafer W to raise and lower the wafer W.

The recess 224 is used to position the wafer W so as not to fly out due to the centrifugal force generated by the rotation of the turntable 202, which corresponds to the substrate mounting area of the present invention, but the substrate mounting area (wafer mounting area) It is not limited to a concave portion, and may be, for example, a guide assembly in which a plurality of peripheral portions of the guide wafer W are arranged in the circumferential direction of the wafer W at the surface of the turntable 202, or electrostatic chucking is provided on the rotary table 202 side. When the holder W mechanism adsorbs the wafer W, the region in which the wafer W is placed by the suction is the substrate placement region.

As shown in FIGS. 33 and 34, the vacuum container 201 is spaced apart from each other in the circumferential direction of the vacuum vessel 201 (the turning direction of the turntable 202) at a position above the region through which the concave portion 224 of the turntable 202 passes. The first reaction gas nozzle 231, the second reaction gas nozzle 232, and the two separation gas nozzles 241 and 242 are radially extended from the center portion. The reaction gas nozzles 231 and 232 and the separation gas nozzles 241 and 242 are attached to, for example, the side wall of the vacuum vessel 201, and the gas introduction ports 231a, 232a, 241a, and 242a at the root end portion penetrate the side wall.

In the illustrated example, the reaction gas nozzles 231 and 232 and the separation gas nozzles 241 and 242 are introduced into the vacuum vessel 201 from the peripheral wall portion of the vacuum vessel 201, but may be introduced from an annular projecting portion 205 which will be described later. At this time, an L-shaped conduit having an opening may be provided on the outer peripheral surface of the protruding portion 205 and the outer surface of the top plate 211, and one side opening of the L-shaped conduit inside the vacuum vessel 201 is connected to the gas nozzle 231 (232 241, 242), and the other side opening of the L-shaped duct outside the vacuum vessel 201 is connected to the structure of the gas introduction port 231a (232a, 241a, 242a).

The reaction gas nozzles 231 and 232 are each connected to a gas supply source of a first reaction gas (BTBAS; bis(tert-butyl) decane) and a gas supply source of a second reaction gas (O ₃ ; ozone) (not shown in the drawings) It is shown that the separation gas nozzles 241, 242 are all connected to a gas supply source (not shown) of the separation gas (N ₂ ; nitrogen). Further, each of the reaction gas nozzles 231 and 232 is also connected to the gas supply source of the N ₂ gas, and the N ₂ gas as the pressure adjustment gas can be supplied to each of the processing regions 200P1 and 200P2 when the film forming apparatus is started to be operated. In the present example, the second reaction gas nozzle 232, the separation gas nozzle 241, the first reaction gas nozzle 231, and the separation gas nozzle 242 are arranged in a clockwise manner.

The reaction gas nozzles 231 and 232 are provided with gas ejection holes 233 for discharging the reaction gas toward the lower side in the longitudinal direction of the nozzle. Further, the separation gas nozzles 241 and 242 are provided with discharge holes 240 for discharging the separation gas toward the lower side at intervals in the longitudinal direction. Each of the reaction gas nozzles 231 and 232 corresponds to the first reaction gas supply mechanism and the second reaction gas supply mechanism, and the lower region is a first treatment region 200P1 for allowing the BTBAS gas to be adsorbed on the wafer W and the O ₃ gas. The second processing region 200P2 for the wafer W is adsorbed.

The separation gas nozzles 241 and 242 correspond to a separation gas supply mechanism for supplying the N ₂ gas to form the separation region 200D separating the atmosphere of the first processing region 200P1 and the second processing region 200P2. In the separation region 200D, the vacuum container 201 As shown in FIGS. 33 to 35B, the top plate 211 is provided with a convex portion 204 having a fan shape in a plan view protruding downward, and the convex portion is centered on the center of rotation of the turntable 202 and will be along the vacuum container 201. The circle drawn near the inner peripheral wall is formed by dividing the circle in the circumferential direction. The separation gas nozzles 241 and 242 are housed in the convex portion 204 in the groove portion 243 formed by extending the center in the circumferential direction of the circle in the radial direction of the circle. That is, the distance from the center axis of the separation gas nozzles 241 and 242 to the fan-shaped edges (the upstream side edge and the downstream side edge in the rotation direction) of the convex portion 204 is set to be the same length.

Further, in the present embodiment, the groove portion 243 is formed by dividing the convex portion 204 into two equal parts. However, in another embodiment, the groove portion 243 may be formed, for example, from the groove portion 243, and the convex portion 204 may be formed on the turntable 202. The upstream side in the turning direction is a wider groove portion 243 than the downstream side in the turning direction.

Therefore, on both sides of the separation gas nozzles 241, 242 in the circumferential direction, for example, a flat lower top surface 244 (the first top surface; that is, below the convex portion 204) is disposed on the top surface 244. Both sides in the circumferential direction have a top surface 245 (second top surface) higher than the top surface 244. The function of the convex portion 204 is to form a narrow space (separation space) for preventing the first reaction gas and the second reaction gas from entering between the turntable 202 and preventing the reaction gases from mixing with each other.

In other words, the separation gas nozzle 241 can prevent the intrusion of the O ₃ gas from the upstream side in the rotation direction of the turntable 202, and can also prevent the intrusion of the BTBAS gas from the downstream side in the rotation direction. The term "blocking gas intrusion" means that the separated gas (N ₂ gas) ejected from the separation gas nozzle 241 is diffused between the first top surface 244 and the surface of the turntable 202, and is blown to the first in this example. The space below the second top surface 245 of the top surface 244 is such that gas cannot enter from the adjacent space. Then, the phrase "making the gas incapable of invading" does not mean that it is completely incapable of entering the space below the convex portion 204 from the adjacent space, and it may mean that it may still invade much, but it can remain in the O ₃ gas which is invaded from both sides and When the BTBAS gas does not mix with each other inside the convex portion 204, the function of the separation region 200D can be exhibited as long as the above-described action can be achieved, that is, the atmosphere separating the first processing region 200P1 and the atmosphere of the second processing region 200P2 can be exhibited. Separation. Therefore, the narrowness of the narrow space is set to ensure a pressure difference between the narrow space (the space below the convex portion 204) and the region adjacent to the space (this example refers to the space below the second top surface 245). The size and size of the effect of "the gas cannot be invaded" can be exerted, and the specific size differs depending on the area of the convex portion 204 and the like. Further, of course, the gas system adsorbed on the wafer W can pass through the inside of the separation region 200D, so as to prevent gas from invading the gas in the gas phase.

On the other hand, as shown in FIGS. 36 and 38, a projection 205 is provided along the outer periphery of the axial center portion 221 below the top plate 211 so as to face the outer periphery of the pivot portion 202 of the pivot portion 202. The side part. As shown in FIG. 36, the protruding portion 205 is continuously formed at a portion of the convex portion 204 on the rotation center side of the turntable 202, and the lower portion thereof is formed at the same height as the lower portion (top surface 244) of the convex portion 204. . 33 and 34 are diagrams of cutting the top plate 211 horizontally from a position lower than the top surface 245 and higher than the separation gas nozzles 241, 242. In addition, the protruding portion 205 and the convex portion 204 are not necessarily defined to be integrally formed, and may be individual individuals.

The manufacturing method of the combined structure of the convex portion 204 and the separation gas nozzle 241 (242) is not limited to the formation of the groove portion 243 at the center of one of the fan-shaped plates as the convex portion 204, and the separation portion is provided in the groove portion 243. The structure of the gas nozzle 241 (242) may be a structure in which two fan-shaped plates are used and fixed to the both sides of the separation gas nozzle 241 (242) in the lower side of the top plate body by screwing or the like.

In the present example, the separation gas nozzles 241 (242) are arranged at intervals of, for example, 10 mm along the longitudinal direction of the nozzles, and are disposed with a discharge hole having a diameter of 0.5 mm directly below. Further, the first reaction gas nozzles 231 are arranged at intervals of, for example, 10 mm in the longitudinal direction of the nozzles, and are provided with discharge holes having a diameter of 0.5 mm, for example, directly below.

In this example, the wafer W having a diameter of 300 mm is used as the substrate to be processed. In this case, the length of the convex portion 204 at a position of, for example, 140 mm from the center of rotation (the boundary portion with the protruding portion 5 described later) is the length in the circumferential direction. (the arc length of the concentric circle of the turntable 202) is, for example, 146 mm, and the length in the circumferential direction is, for example, 502 mm at the outermost portion of the wafer W mounting region (recessed portion 224). Further, as shown in Fig. 35A, at the outer portion, the length of the convex portion 204 at each of the left and right sides of the separation gas nozzle 241 (242) in the circumferential direction is L, and the length L is 246 mm.

Further, as shown in Fig. 35B, the height h below the convex portion 204 (i.e., the top surface 244) from the surface of the turntable 202 may be, for example, 0.5 mm to 10 mm, preferably about 4 mm. At this time, the rotation speed of the turntable 202 is set to, for example, 1 rpm to 500 rpm. In order to ensure the separation function of the separation region 200D, the size of the convex portion 204 and the lower portion of the convex portion 204 (the first top surface 244) and the turntable are set according to, for example, experiments, etc., depending on the use range of the rotational speed of the turntable 202, and the like. The height h between the 202 surfaces. In addition, the separation gas is not limited to N ₂ , and an inert gas such as Ar may be used. However, it is not limited to the inert gas, and hydrogen gas or the like may be used as long as it does not affect the film formation process. There are no special restrictions on the types.

The lower side of the top plate 211 of the vacuum vessel 201 (i.e., the top surface seen from the wafer mounting area (recess 224) of the turntable 202) has a first top surface 244 and a height in the circumferential direction as described above. The second top surface 245 having a higher surface 244, FIG. 32 is a longitudinal cross-sectional view of the region in which the upper top surface 245 is disposed, and FIG. 36 is a longitudinal cross-sectional view of the region in which the lower top surface 244 is disposed. As shown in FIGS. 33 and 36, a peripheral portion of the fan-shaped convex portion 204 (a portion on the outer edge side of the vacuum container 201) is formed with a curved portion 246 which is curved in an L shape so as to face the outer end surface of the turntable 202. The fan-shaped convex portion 204 is provided on the top plate 211 side, and since it can be removed from the container body 212, between the outer end surface of the turntable 202 and the inner peripheral surface of the curved portion 206, and at the curved portion 246 There is a slight gap between the outer peripheral surface and the inner peripheral surface of the container body 212. Here, similarly to the convex portion 204, the curved portion 246 is provided for the purpose of preventing the reaction gas from intruding from both sides to prevent the two reaction gases from being mixed with each other, and between the inner peripheral surface of the curved portion 246 and the outer end surface of the turntable 202. The gap is set to be, for example, the same as the height h of the top surface 244 facing the surface of the turntable 202. That is, in the present example, the inner peripheral surface of the curved portion 246 constitutes the inner peripheral wall of the vacuum vessel 201 as viewed from the surface side region of the turntable 202.

In the separation region 200D, the inner peripheral wall of the container body 212 is formed as a vertical surface as shown in FIG. 36 to the outer peripheral surface of the curved portion 246, but a portion other than the separation region 200D is as shown in FIG. For example, the portion facing the outer end surface of the turntable 202 is traversed to the bottom surface portion 214, and is cut into a structure in which the longitudinal cross-sectional shape is rectangular and the outer side is recessed. At the recessed portion, the gap between the periphery of the turntable 202 and the inner peripheral wall of the container body 212 is communicated to the first processing region 200P1 and the second processing region 200P2, respectively, and can be supplied to the respective processing regions 200P1, 200P2. The structure of the reaction gas discharge. The gaps are referred to as a first exhaust region 200E1 and a second exhaust region 200E2, respectively, and the bottom portions of the first exhaust region 200E1 and the second exhaust region 200E2 (that is, the lower side of the turntable 202) are as shown in the figure. As shown in FIG. 32 and FIG. 34, the first exhaust port 261 and the second exhaust port 262 are formed.

As shown in FIG. 40, for example, in a plan view, the exhaust ports 261, 262 are disposed on both sides of the rotation direction of the separation region 200D (the convex portion 204), and are specifically used for performing each reaction gas (BTBAS gas). And the exhaust of the O ₃ gas) so that the separation region D can surely exert its separation action. In this example, one side of the exhaust port 261 is provided between the first reaction gas nozzle 231 and the separation region 200D adjacent to the downstream side of the rotation direction (relative to the reaction gas nozzle 231), and the other side The exhaust port 262 is provided between the second reaction gas nozzle 232 and the separation region 200D adjacent to the downstream side of the rotation direction (relative to the reaction gas nozzle 232).

In other words, as shown in FIG. 34, the exhaust port 261 of the first exhaust passage 263a is located in the first processing region 200P1 and is adjacent to the region 200P1 and is adjacent to, for example, the turntable 202, as viewed from the center of rotation of the turntable 202. The separation region 200D on the downstream side in the rotation direction (corresponding to the region covered by the convex portion 204 in which the separation gas nozzle 242 is provided in FIG. 34) is located. That is, the line L1 that is in communication with the first processing region 200P1 at the center of the turntable 202 shown by the one-dot chain line in FIG. 34, and the center of the turntable 202 and the separated region adjacent to the downstream side of the first processing region 200P1. Between the line L2 that the upstream side edge of the 200D is connected to. Further, the exhaust port 262 of the second exhaust passage 263b is positioned in the second processing region 200P2 and the separation region 200D adjacent to the downstream side in the rotation direction of the turntable 202, for example, in the second processing region 200P2. In Fig. 34, it is located between the area covered by the convex portion 204 where the separation gas nozzle 241 is provided. That is, the line L3 which is located at the center of the turntable 202 and the second processing area 200P2 shown by the two-dot chain line in FIG. 34, and the center of the turntable 202 and the separated area adjacent to the downstream side of the second processing area 200P2. The line between the straight line L4 where the upstream side edge of 200D is connected.

However, the position at which the first and second exhaust ports 261 and 262 are provided is not limited to the bottom surface portion of the vacuum container 201, and may be provided at the side wall of the vacuum container 201. Then, the exhaust ports 261, 262 are disposed on the side walls of the vacuum vessel 201, which may also be disposed at a higher position than the turntable 202. By providing the exhaust ports 261, 262, the gas above the turntable 202 can flow toward the outside of the turntable 202, so that the structure can suppress particles compared to the exhaust from the top surface of the turntable 202. The idea of raising is advantageous.

As shown in FIG. 32, the first exhaust port 261 is connected to a vacuum pump 264a including a mechanical booster pump and a dry pump continuously, via the first exhaust passage 263a, and is connected to the vacuum pump 261 and the vacuum pump. A first pressure adjusting mechanism 265a is interposed between the 264a. The first pressure adjusting mechanism 265a is constituted by a pressure regulating valve (composed of, for example, a butterfly valve), a motor that switches the pressure regulating valve, and a field type controller that controls the operation of the motor (not shown), and constitutes The APC (Auto Pressure Controller) that can perform pressure adjustment based on the result of the pressure gauge 266a provided in the exhaust passage 263a on the upstream side of the pressure adjustment mechanism 265a. Here, the vacuum pump 264a corresponds to the first evacuation mechanism, and hereinafter, the first exhaust passage 263a, the first pressure adjustment mechanism 265a, and the vacuum pump 264a are collectively referred to as a first exhaust system.

The pressure gauge 266a can measure the pressure of the first processing region 200P1 in the vacuum container 201 on the upstream side of the exhaust passage 263a, and the pressure can be adjusted based on the detection result of the pressure gauge 266a. The pressure adjusting mechanism 265a has a function of maintaining the first processing region 200P1 in a constant pressure atmosphere.

Further, the second exhaust port 262 is connected to the second vacuum exhaust mechanism (vacuum pump 264b) by the second exhaust passage 263b, and is disposed between the exhaust port 262 and the vacuum pump 264b. The second pressure adjusting mechanism 265b that can maintain the second processing region 200P2 in the vacuum chamber 1 in a constant pressure atmosphere can be exhausted independently of the first exhaust passage 263a. Then, the second pressure adjusting mechanism 265b constitutes, for example, a field type APC capable of performing pressure adjustment based on the detection result of the pressure gauge 266b provided in the exhaust passage 263b on the upstream side of the adjusting mechanism 265b. Hereinafter, the second exhaust passage 263b, the second pressure adjusting mechanism 265b, and the vacuum pump 264b are collectively referred to as a second exhaust system. Further, on the downstream side of each of the vacuum pumps 264a and 264b, first and second waste disposal apparatuses (not shown) for independently performing waste disposal on the discharged materials discharged from the respective exhaust systems are connected.

A space between the turntable 202 and the bottom surface portion 214 of the vacuum container 201 is provided with a heating mechanism (heater unit 207) as shown in Figs. 32 and 37, and the turntable 202 can be used to turn the turntable 202. The wafer W is heated to a temperature determined by the process conditions. The lower side of the vicinity of the periphery of the turntable 202 is provided with a shielding assembly 271 around the entire circumference of the heater unit 207 to distinguish the atmosphere above the turntable 202 and even the atmosphere of the exhaust regions 200E1, 200E2 and the heater unit. The atmosphere of 207. The upper edge of the shielding member 271 is bent outward to form a flange shape, and the gap between the curved surface and the lower side of the turntable 202 can be narrowed to suppress gas from entering the shield assembly 271 from the outside.

In the vicinity of the center portion of the lower portion of the turntable 202, the portion of the bottom surface portion 214 located closer to the center of rotation than the space in which the heater unit 207 is disposed is close to the axial center portion 221 to form a narrow space therebetween, and The through hole of the rotary shaft 222 is inserted through the bottom surface portion 214, and the gap between the inner peripheral surface and the rotary shaft 222 is also narrow, and the narrow spaces are communicated into the housing 220. Then, the casing 220 is provided with a flushing gas supply pipe 272 for supplying flushing gas (N ₂ gas) into the narrow space for flushing. Further, at the lower side of the heater unit 207, the bottom surface portion 214 of the vacuum vessel 201 is provided with a flushing gas supply pipe 273 for rinsing the installation space of the heater unit 207 at a plurality of positions in the circumferential direction.

By providing the above-described flushing gas supply pipes 272 and 273, as shown by the flow arrows of the flushing gas in FIG. 38, the space in the casing 220 and the installation space of the heater unit 207 is flushed with N ₂ gas. The flushing gas system is discharged to the exhaust ports 261, 262 from the gap between the turntable 202 and the shield assembly 271 via the exhaust regions 200E1, 200E2. Thereby, it is possible to prevent the BTBAS gas or the O ₃ gas from flowing from the lower side of the first processing region 200P1 and the second processing region 200P2 to the other side via the lower side of the turntable 202, so that the flushing gas can achieve the function of separating the gas.

Further, the center portion of the top plate 211 of the vacuum vessel 201 is connected to the separation gas supply pipe 251 to supply the separation gas (N ₂ gas) to the space 252 between the top plate 211 and the axial portion 221 . The separation gas system supplied to the space 252 is ejected toward the peripheral edge along the surface of the wafer mounting region side of the turntable 202 via the narrow gap 250 between the protruding portion 205 and the turntable 202. Since the space surrounded by the protruding portion 205 is filled with the separation gas, it is possible to prevent the reaction gas (BTBAS gas or O ₃ gas) from being mixed with each other via the center portion of the turntable 202 between the first processing region 200P1 and the second processing region 200P2. . In other words, the film forming apparatus includes a central portion region 200C that is formed by dividing the center of rotation of the turntable 202 and the vacuum container 201 to separate the atmospheres of the first processing region 200P1 and the second processing region 200P2. The center portion region 200C is formed with a discharge port that ejects the separation gas to the surface of the turntable 202 while being flushed by the separation gas in the rotation direction. Further, the discharge port described herein corresponds to a narrow gap 250 between the protruding portion 205 and the turntable 202.

Further, as shown in FIGS. 33, 34, and 39, the side wall of the vacuum container 201 is formed with a transfer port 215 for transferring the wafer W between the external transfer arm 210 and the turntable 202, and the transfer port 215 is Opening and closing is performed by a gate valve not shown in the drawing. Further, since the wafer mounting region (recessed portion 224) of the turntable 202 is transferred to the transfer arm 210 at a position facing the transfer port 215, the transfer position is corresponding to the transfer position on the lower side of the turntable 202. At the portion of the portion, a lifting mechanism (not shown) for transmitting the lifting pin 216 that can lift the wafer W from the inner surface is provided through the recess 224.

Further, as shown in FIGS. 32 and 34, the film forming apparatus of the present embodiment includes a control unit 200 composed of a computer for controlling the overall operation of the apparatus, and the memory of the control unit 200 is useful for the operation of the apparatus. Program. The program is composed of a group of steps for performing the operation of the device to be described later, and can be mounted in the control unit 200 by a memory such as a hard disk, a compact disk, a magneto-optical disk (MO), a memory card, or a floppy disk.

Here, as shown in FIG. 32, the control unit 200 is connected to the first pressure adjustment mechanism 265a and the second pressure adjustment mechanism 265b, and is based on, for example, information input by an operator from an operation terminal not shown in the drawing, or The information set in the memory is set for the pressure setting value of the controller of each of the pressure adjustment mechanisms 265a and 265b. Further, the detection results of the pressure gauges 266a and 266b are also output to the control unit 200.

Next, the action of the above embodiment will be described. First, the gate valve (not shown) is opened, and the wafer 210 is transferred from the outside to the concave portion 224 of the turntable 202 via the transfer port 215 by the transfer arm 210. In the transfer step, when the concave portion 224 is stopped at the position facing the transfer port 215, as shown in FIG. 39, the lift pin 216 is lifted and lowered from the bottom side of the vacuum container 1 through the through hole of the bottom surface of the recess portion 224. The turntable 202 is intermittently rotated and the wafer W transfer described above is performed to place the wafers W in the five recesses 224 of the turntable 202, respectively. Next, the vacuum pumps 264a, 264b are operated and the pressure regulating valves of the first and second pressure adjusting mechanisms 265a, 265b are fully opened to evacuate the inside of each of the processing regions 200P1, 200P2 to a predetermined pressure while rotating the clockwise The turntable 202 is heated by the heater unit 207 to the wafer W. In detail, the turntable 202 is preheated to, for example, 300 ° C by the heater unit 207, and the wafer W is placed on the turntable 202 to be heated and heated.

While the heating operation of the wafer W is performed, the amount of N ₂ gas corresponding to the reaction gas, the separation gas, and the purge gas supplied after the film formation is started is supplied to the vacuum vessel 201 to perform the vacuum vessel 201. Pressure regulation inside. For example, 100 sccm is ejected from the first reaction gas nozzle, 10,000 sccm is ejected from the second reaction gas nozzle 232, 20,000 sccm is ejected from each of the separation gas nozzles 241 and 242, and 5,000 sccm of N ₂ is ejected from the separation gas supply pipe 251. The gas is supplied into the vacuum container 201, and the pressure regulating valve is opened and closed by the first and second pressure adjusting mechanisms 265a and 265b so that the pressure in each of the processing regions 200P1 and 200P2 reaches the aforementioned pressure setting value (for example, 1,067). Pa (8 Torr)). Further, at this time, each of the flushing gas supply pipes 272 and 273 is also supplied with a specific amount of N ₂ gas.

Next, it is confirmed by the temperature sensor not shown in the figure whether the temperature of the wafer W has reached the set temperature, and after the pressures of the first and second processing regions 200P1 and 200P2 have respectively reached the set pressure, the first The gas supplied from the reaction gas nozzle 231 and the second reaction gas nozzle 232 is switched to the BTBAS gas and the O ₃ gas, and the film formation operation of the wafer W is started. At this time, it is preferable to perform gas switching of each of the reaction gas nozzles 231, 232 slowly so that the total flow rate of the gas supplied into the vacuum vessel 201 does not change abruptly.

Then, the wafer W alternately passes through the first processing region 200P1 and the second processing region 200P2 due to the rotation of the turntable 202, and adsorbs the BTBAS gas, and then adsorbs the O ₃ gas to cause the BTBAS molecules to be oxidized to form one layer or plural. The layer of ruthenium oxide molecules is layered so that the ruthenium oxide layer can be sequentially deposited to form a ruthenium oxide film having a specific film thickness.

At this time, the separation gas supply pipe 251 is also supplied with the separation gas (N ₂ gas), whereby the center portion region 200C (that is, between the protruding portion 205 and the center portion of the turntable 202) is ejected along the surface of the turntable 202. ₂ gas. In this example, the inner peripheral wall of the container body 212 along the space below the second top surface 45 of the reaction gas nozzles 231 and 232 is cut and expanded as described above, and the exhaust port is opened. Since the 261 and 262 are located below the wide space, the pressure in the space below the second top surface 245 is lower than the pressure in the narrow space on the lower side of the first top surface 244 and the front center portion 200C. The gas flow state pattern when the gas is ejected from each portion is as shown in FIG. And the discharge nozzle 232 to impact the surface of the rotary table 202 (the wafer W surface area and a non-mounting surface of the wafer W both) flows to the upstream side in the rotation direction along the surface of the O ₃ gas from the lower side toward the second reaction gas The N ₂ gas from the upstream side is pushed back into the exhaust region 200E2 between the periphery of the turntable 202 and the inner peripheral wall of the vacuum vessel 201, and is discharged through the exhaust port 262.

Further, the O ₃ gas which is ejected from the second reaction gas nozzle 232 toward the lower side and hits the surface of the turntable 202 and flows along the surface toward the downstream side in the rotation direction is the flow of the N ₂ gas ejected from the central portion region 200C. There is a tendency to flow toward the exhaust port 262 by the suction of the exhaust port 262, but a portion thereof flows to the separation region 200D adjacent to the downstream side, and attempts to flow into the lower side of the fan-shaped convex portion 204. However, since the height of the top surface 244 of the convex portion 204 and the length in the circumferential direction are set to prevent gas from intruding to the lower side of the top surface 244 under process parameters (including the flow rate of each gas, etc.) during operation. The size, as shown in Fig. 35B, the O ₃ gas is almost completely unable to flow into the lower side of the fan-shaped convex portion 204, or is still somewhat inflow but it cannot reach the vicinity of the separation gas nozzle 241, but is removed from the separation gas nozzle 241. The ejected N ₂ gas is pushed back to the upstream side in the rotation direction (that is, on the side of the processing region 200P2), and flows through the gap between the periphery of the turntable 202 and the inner peripheral wall of the vacuum vessel 201 together with the N ₂ gas ejected from the central portion region 200C. The exhaust region 200E2 is discharged to the exhaust port 262.

In addition, the BTBAS gas which is ejected from the first reaction gas nozzle 231 toward the lower side and hits the surface of the turntable 202 and flows to the upstream side and the downstream side in the rotation direction is almost completely inaccessible to the upstream side and the downstream side in the rotation direction. The lower side of the fan-shaped convex portion 204 is pushed back to the first processing region 200P1 side even after intrusion, and is separated from the periphery of the turntable 202 and the vacuum container 201 together with the N ₂ gas ejected from the central portion region 200C. The gap of the peripheral wall flows through the exhaust region 200E1 and is discharged to the exhaust port 261. That is, in each of the separation regions 200D, the intrusion of the reaction gas (BTBAS gas or O ₃ gas) flowing in the atmosphere can be prevented, but the gas molecules adsorbed on the wafer W can pass directly through the separation region (ie, by the fan) The lower convex portion 204 is formed below the lower top surface 244 and is used for film formation.

Further, the BTBAS gas (O ₃ gas in the second processing region 200P2) in the first processing region 200P1 attempts to intrude into the central portion region 200C, but as shown in FIGS. 38 and 40, the central portion region 200C is oriented. The separation gas is ejected from the periphery of the turntable 202, so that the gas can be prevented from intruding by the separation gas, or even if it is still invaded, it is pushed back by the separation gas, and can be prevented from flowing through the center portion region 200C. The second processing region 200P2 (first processing region 200P1).

Then, at the separation region 200D, the peripheral portion of the fan-shaped convex portion 204 is bent downward, and the gap between the curved portion 246 and the outer end surface of the turntable 202 is substantially narrow as described above to substantially prevent the passage of gas. The BTBAS gas (O ₃ gas in the second processing region 200P2) of the first processing region 200P1 can be prevented from flowing into the second processing region 200P2 (the first processing region 200P1) via the outside of the turntable 202. Therefore, the atmosphere of the first processing region 200P1 and the atmosphere of the second processing region 200P2 can be completely separated by the two separation regions 200D, and the BTBAS gas is discharged to the exhaust port 261, and the O ₃ gas is discharged to the exhaust port. 262. As a result, the two reaction gases are in this example, and the BTBAS gas and the O ₃ gas are not mixed with each other in the atmosphere or on the wafer W.

In addition, in this example, the lower side of the turntable 202 is flushed by the N ₂ gas, so there is no need to worry that the gas flowing into the exhaust regions 200E1 and 200E2 will pass through the lower side of the turntable 202, for example, the BTBAS gas flows into the O ₃ gas. Supply area and other issues.

Since the first and second processing regions 200P1 and 200P2 are connected to the dedicated exhaust passages 263a and 263b via the respective exhaust regions 200E1 and 200E2, various gases flowing into the first processing region 200P1 and the first exhaust region 200E1 may be The first exhaust passage 263a is discharged, and the various gases that have flowed into the second processing region 200P2 and the second exhaust region 200E2 are discharged through the second exhaust passage 263b. Therefore, the reaction gas supplied to the processing regions 200P1, 200P2 on one side can be discharged to the outside of the vacuum container 201 without being mixed with the reaction gas supplied to the processing regions 200P2, 200P1 on the other side. After the film forming process is completed, the wafers W are sequentially carried out by the transfer arm 210 in the opposite direction of the loading.

Here, an example of processing parameters is described. When the wafer W having a diameter of 300 mm is used as the substrate to be processed, the number of revolutions of the turntable 202 is, for example, 1 rpm to 500 rpm, and the process pressure is, for example, 1,067 Pa (8 Torr). The temperature is, for example, 350 ° C, the flow rates of the BTBAS gas and the O ₃ gas are each, for example, 100 sccm and 10,000 sccm, and the flow rate of the N ₂ gas from the separation gas nozzles 241, 242 is, for example, 20,000 sccm, and the separation gas supply pipe 251 from the center of the vacuum vessel 201. The flow rate of N ₂ gas is, for example, 5,000 sccm. Moreover, the number of cycles of supply of the reaction gas to one wafer, that is, the number of times the wafer W passes through the processing regions 200P1 and 200P2 varies depending on the target film thickness, and is, for example, 600 times.

According to the above embodiment, the following effects are obtained. In the vacuum container 201 including the turntable 202, the first processing region 200P1 to which the first reaction gas (BTBAS) is supplied and the second processing region 200P2 to which the second reaction gas (O ₃ gas) is supplied are provided in the rotation direction. A separation region 200D for separating the regions from the separation gas nozzles 241, 242 to between the regions is provided, and a plurality of wafers W are rotated in the rotation direction. The stage 202 is formed by laminating a reaction product layer (yttria layer) by BTBAS and O ₃ gas to form a film. Then, when the process is performed, the exhaust ports 261 and 262 of the first exhaust passage 263a and the second exhaust passage 263b provided at positions corresponding to the first processing region 200P1 and the second processing region 200P2 are respectively provided. Vacuum evacuation is performed while the exhaust system (exhaust passages 263a, 263b, pressure regulating mechanisms 265a, 265b, and vacuum pumps 264a, 264) are independent of each other, so there is no need to worry about the BTBAS gas and the O ₃ gas being arranged in the row. The gas system is mixed with each other, so there is no (or very little) enthalpy of reaction product formation in the exhaust system.

Then, by providing a lower top surface on both sides of the separation gas nozzles 241, 242 in the rotation direction, each reaction gas is prevented from intruding into the separation region 200D while being rotated from the center portion of the rotary table 202 to the vacuum vessel 201. The divided central portion region 200C discharges the separation gas toward the periphery of the turntable 202, and the separated gas diffused to both sides of the separation region and the separated gas discharged from the central portion region are passed through the turntable 202 together with the reaction gas. The periphery is discharged from the gap between the peripheral wall of the vacuum vessel 201, and the mixed reaction gases can be prevented from mixing with each other, and a good film formation treatment can be performed, and at the same time, no reaction product (or positive suppression) is generated at all, and the reaction can be suppressed. Particles are produced. Further, the present invention is also applicable to a case where one wafer W is placed on the turntable 202.

Further, the film forming apparatus is provided with a plurality of wafers W in the rotation direction of the turntable 202, and sequentially rotates the turntable 202 to sequentially pass the first processing region 200P1 and the second processing region 200P2 to perform so-called Since ALD (or MLD) is used, the rinsing time of the reaction gas is not required as compared with the case of the leaf type film forming apparatus described in the background art, so that the film formation process can be performed with high productivity.

Here, the exhaust system provided in the vacuum container 201 is not limited to two sets of systems, for example, the film forming apparatus shown in FIG. 42, and the convex portion 204 on the turntable 202 may be added to provide the third processing region 200P3. The third group exhaust system (exhaust passage 263c, third pressure adjusting mechanism 265c, vacuum pump 264c) is connected to the processing region 200P3. In addition, in Fig. 42, reference numeral 310 denotes a third reaction gas nozzle, reference numeral 410 denotes a separation gas nozzle, and reference numeral 260 denotes an exhaust port.

Further, the number of sets of the exhaust systems connected to the respective processing areas 200P1 and 200P2 is not limited to one set of systems, and two or more sets of exhaust systems may be connected to one of the processing areas 200P1 and 200P2.

Further, the operation method of the exhaust system is not limited to the pressure adjustment of the corresponding processing regions 200P1, 200P2 at the respective exhaust systems as shown in the above embodiment. For example, a flow meter may be provided at each exhaust system to adjust the opening degree of the valves disposed in the exhaust passages 263a, 263b so that the exhaust amount of each processing region can reach its preset value. The mechanism for performing the pressure adjustment and the discharge amount adjustment is not limited to the opening and closing using the valve, and the pressure and the displacement amount can be adjusted by, for example, changing the rotational speed of the mechanical booster pump of the vacuum pumps 264a and 264b.

As the processing gas to which the present invention is applied, in addition to the above examples, DCS [dichlorodecane], HCD [hexachlorodimethane], TMA [trimethylaluminum], 3DMAS [tris(dimethylamino)] may also be mentioned. ) decane], TEMAZ [tetrakis(ethylmethylamino acid)-zirconium], TEMAH [tetrakis(ethylmethylamino acid)-oxime], Sr(THD) ₂ [bis(tetramethylheptanedione) Acid)-锶], Ti(MPD)(THD) [methylglutaric acid) (bis-tetramethylheptanedionate)-titanium], monoamine-based decane, and the like.

Next, the first top surface 244 is formed in a narrow space on both sides of the separation gas supply nozzle 241 (242), and the separation gas supply nozzle 241 is as shown in FIGS. 43A and 43B, for example, a wafer having a diameter of 300 mm. In the case of W as the substrate to be processed, it is preferable that the width L of the portion passing through the center of the wafer W in the direction of rotation of the turntable 202 is 50 mm or more. In order to effectively prevent the reaction gas from intruding from below the convex portion 204 (narrow space) from both sides of the convex portion 204, when the width dimension L is too short, the first top surface 244 and the turntable 202 must be correspondingly reduced. distance. Further, when the distance between the first top surface 244 and the turntable 202 is set to a certain size, the farther away from the center of rotation of the turntable 202, the faster the speed of the turntable 202 is, so that the reaction gas is prevented. The effect of the intrusion, the further away from the center of rotation, the longer the required width dimension L. According to the foregoing point of view, when the width dimension L of the portion through which the center WO of the wafer W passes is less than 50 mm, the distance between the first top surface 244 and the turntable 202 needs to be considerably reduced, and thus the turntable is rotated. At 202 o'clock, it takes effort to actively suppress the vibration of the turntable 202 to prevent the turntable 202 or the wafer W from striking the top surface 244. Further, the higher the rotation speed of the turntable 202, the more easily the reaction gas intrudes from the upstream side of the convex portion 204 to the lower side of the convex portion 204. Therefore, when the width dimension L is less than 50 mm, the rotation must be reduced. The speed of the station 202 is not a good strategy from the point of view of capacity. Therefore, the width L is preferably 50 mm or more, but the effect of the present invention cannot be obtained not by 50 mm or less. That is, the width dimension L is preferably from 1/10 to 1/1 of the diameter of the wafer W, and more preferably about 1/6 or more. In addition, in FIG. 43A, for convenience of drawing, the description of the concave portion 224 is omitted.

Here, other examples of the arrangement modes of the processing regions 200P1, 200P2 and the separation region 200D other than the above-described embodiments will be described. 44 is an example in which the second reaction gas nozzle 232 is disposed on the upstream side in the rotation direction of the turntable 22 of the conveyance port 215, and the same effect can be obtained by such an arrangement.

Further, the present invention needs to be provided with a lower top surface (first top surface) 244 for forming a narrow space on both sides of the separation gas nozzle 241 (242), but it may be as shown in FIG. 45 at the reaction gas nozzle 231 ( 232) A structure having a lower top surface and continuously forming the top surfaces, that is, a portion other than the separation gas nozzle 241 (242) and the reaction gas nozzle 231 (232) The same effect can be obtained by the structure in which the region of the turntable 202 is entirely provided with the convex portion 204. Viewed from different angles, the structure extends the first top surface 244 on either side of the separation gas nozzle 241 (242) to an example at the reaction gas nozzle 231 (232). At this time, the separation gas diffuses to both sides of the separation gas nozzle 241 (242), and the reaction gas diffuses to both sides of the reaction gas nozzle 231 (232), and the two gases flow at the lower side (narrow space) of the convex portion 204. However, the gases are exhausted from the exhaust port 261 (262) between the reaction gas nozzle 231 (232) and the separation gas nozzle 242 (241).

In the above embodiment, the rotary shaft 222 of the turntable 202 is located at the center of the vacuum container 201, and the space between the center portion of the turntable 202 and the upper surface of the vacuum container 201 is flushed with separated gas, but the present invention may also be The structure shown in FIG. In the film forming apparatus of Fig. 46, the bottom surface portion 214 of the central portion of the vacuum chamber 201 is formed with a storage space 280 in which the driving portion is formed downward, and a concave portion 280a is formed in the upper portion of the central portion of the vacuum container 201. A pillar 281 is interposed between the bottom of the storage space 280 at the center of the container 201 and the upper portion of the recess 280a of the vacuum container 201 to prevent the BTBAS gas from the first reaction gas nozzle 231 and the second reaction gas nozzle 232. The O ₃ gas is mixed with each other through the center portion.

Regarding the mechanism for rotating the turntable 202, a swivel sleeve 282 is disposed around the strut 281, and an annular turntable 202 is disposed along the swivel sleeve 282. Then, the storage space 280 is provided with a drive gear portion 284 that can be driven by the motor 283, and the drive gear portion 284 is rotated by the gear portion 285 formed on the outer periphery of the lower portion of the rotary sleeve 282. The structure of the sleeve 282. Symbols 286, 287, and 288 are bearing parts. Further, a flushing gas supply pipe 274 is connected to the bottom of the storage space 280, and a flushing gas supply pipe 275 is connected to the upper portion of the vacuum vessel 201 for supplying flushing gas to the side surface of the recessed portion 280a and the upper end portion of the rotary sleeve 282. Between the spaces. Fig. 46 is an opening portion for drawing a space for supplying a flushing gas to the space between the side surface of the concave portion 280a and the upper end portion of the rotary sleeve 282 at the left and right sides, but preferably, the opening portion should be considered and designed (flushing gas supply) The number of the openings is such that the BTBAS gas and the O ₃ gas do not mix with each other via the vicinity of the rotary sleeve 282.

In the embodiment of Fig. 46, the space between the side surface of the concave portion 280a and the upper end portion of the rotary sleeve 282 corresponds to the separation gas discharge hole, and then the separation gas discharge hole is formed by the side of the turntable 202. The swivel sleeve 282 and the stay 281 constitute a central portion region located at a central portion of the vacuum container 201.

A substrate processing apparatus using the above film forming apparatus is shown in FIG. In Fig. 47, reference numeral 291 is a sealed transfer container which can store, for example, 25 wafers W, and is called a wafer cassette. Reference numeral 292 is an atmospheric transfer chamber in which the transfer arm 293 is provided, and symbols 294 and 295 can be used in the atmosphere. A load lock chamber (vacuum preparation chamber) for switching the atmosphere between the vacuum atmosphere, a symbol 296 is provided with a vacuum side transfer chamber of the double-arm transfer arm 297, and reference numerals 298 and 299 are the film forming apparatuses of the present invention. The transfer container 291 is transported from the outside to a loading/unloading cassette provided with a mounting table (not shown), and is connected to the atmospheric transfer chamber 292, and then the lid body is opened and closed by an opening and closing mechanism not shown. The wafer W is taken out from the transfer container 291 by the transfer arm 293. Next, it is carried into the load lock chamber 294 (295), and the chamber is switched from the atmosphere to the vacuum atmosphere, and then the wafer W is taken out by the transfer arm 297 and carried into the film forming apparatuses 298 and 299. In one case, the above film forming treatment is performed. As described above, the film forming apparatus of the present invention having two, for example, five sheets of processing can perform so-called ALD (MLD) with high productivity.

The present invention has been described with reference to the embodiments. However, the invention is not limited thereto, and various modifications and changes can be made within the scope of the invention as described in the appended claims.

This application claims priority based on Japanese Patent Application Nos. 2008-222723, 2008-222728, and 2009-165984 filed on August 29, 2008, August 29, 2008, and July 14, 2009, Japan. And refer to all of this content here.

1. . . Vacuum container

2. . . Turntable

4. . . Convex

5. . . Protruding

6. . . Bending

7. . . Heater unit

10. . . Transfer arm

11. . . roof

12. . . Container body

13. . . O-ring

14. . . Bottom part

15. . . Transport port

16. . . Lift pin

20. . . case

twenty one. . . Axis

twenty two. . . Rotary axis

twenty three. . . Drive department

twenty four. . . Concave

31. . . First reaction gas nozzle

32. . . Second reaction gas nozzle

31a, 32a, 41a, 42a. . . Gas introduction

31b, 32b, 41b, 42b. . . Supply tube

36a, 36b, 36c, 36d, 36e, 36f. . . valve

37a, 37b, 37c, 37d, 37e, 37f. . . Flow adjustment department

33. . . Spout hole

38a, 38b, 38c. . . Gas supply

39. . . Gas supply system

40. . . Spout hole

41, 42. . . Separation gas nozzle

43. . . Ditch

44. . . First top

45. . . Second top surface

46. . . Bending

47. . . Circulation room

50. . . Narrow gap

51. . . Separate gas supply pipe

52. . . space

60, 61, 62. . . exhaust vent

63a, 63b, 63c. . . Exhaust passage

65a, 65b, 65c. . . valve

64, 64a, 64b, 64c. . . Vacuum pump

66a, 66b, 66c. . . Treatment pressure detecting mechanism

67a, 67b, 67c. . . Pressure detecting mechanism

72, 73, 74, 75. . . Flush gas supply pipe

68. . . Converter

71. . . Shading component

80. . . Control department

81. . . CPU

82. . . Memory

83. . . Processing program

84. . . Working memory

85. . . Memory department

86. . . Timer

91. . . First processing area

92. . . Second processing area

100. . . Storage space

100a. . . Concave

101. . . pillar

102. . . Rotary sleeve

103. . . motor

104, 105. . . Gear department

106, 107, 108. . . Bearing department

111. . . Wafer box

112. . . Atmospheric transfer room

113. . . Transfer arm

114, 115. . . Load lock chamber

116. . . Vacuum side transfer room

117a, 117b. . . Transfer arm

118, 119. . . Film forming device

310. . . Third reaction gas nozzle

410. . . Separation gas nozzle W wafer

200. . . Control department

201. . . Vacuum container

202. . . Turntable

204. . . Convex

205. . . Protruding

206. . . Bending

207. . . Heater unit

210. . . Transfer arm

211. . . roof

212. . . Container body

213. . . O-ring

214. . . Bottom part

215. . . Transport port

216. . . Lift pin

220. . . case

221. . . Axis

222. . . Rotary axis

223. . . Drive department

224. . . Concave

231. . . First reaction gas nozzle

232. . . Second reaction gas nozzle

233. . . Spout hole

231a, 232a, 241a, 242a. . . Gas introduction

240. . . Spout hole

241, 242. . . Separation gas nozzle

243. . . Ditch

244. . . First top

245. . . Second top surface

246. . . Bending

250. . . Narrow gap

251. . . Separate gas supply pipe

252. . . space

261, 262. . . exhaust vent

263a, 263b, 263c. . . Exhaust passage

264a, 264b, 264c. . . Vacuum pump

265a, 265b, 265c. . . valve

271. . . Shading component

266a, 266b, 266c. . . Treatment pressure detecting mechanism

267a, 267b, 267c. . . Pressure detecting mechanism

272, 273, 274, 275. . . Flush gas supply pipe

280. . . Storage space

280a. . . Concave

281. . . pillar

282. . . Rotary sleeve

283. . . motor

284. . . Drive gear

285. . . Gear department

286, 287, 288. . . Bearing department

291. . . Transport container

292. . . Atmospheric transfer room

293. . . Transfer arm

294, 295. . . Load lock chamber

296. . . Vacuum side transfer room

297a, 297b. . . Transfer arm

298, 299. . . Film forming device

Fig. 1 is a longitudinal sectional view showing a film forming apparatus according to a first embodiment of the present invention.

Fig. 2 is a schematic perspective view showing the inside of a film forming apparatus according to a first embodiment of the present invention.

Fig. 3 is a transverse plan view showing a film formation apparatus according to a first embodiment of the present invention.

4A and 4B are vertical cross-sectional views of a treatment region and a separation region in the film formation apparatus according to the first embodiment of the present invention.

Fig. 5 is a partial longitudinal sectional view showing a film forming apparatus according to a first embodiment of the present invention.

Fig. 6 is a partial cross-sectional perspective view showing a film forming apparatus according to a first embodiment of the present invention.

Fig. 7 is a view for explaining a flow pattern of a separation gas or a flushing gas in the film forming apparatus according to the first embodiment of the present invention.

Fig. 8 is a partial cross-sectional perspective view showing a film forming apparatus according to a first embodiment of the present invention.

Fig. 9 is a schematic view showing an example of a control unit of the film forming apparatus according to the first embodiment of the present invention.

Fig. 10 is a flow chart showing an example of an overall processing process performed by the film forming apparatus according to the first embodiment of the present invention.

Fig. 11 is a flow chart showing an example of an exhaust gas flow rate adjusting process in the film forming apparatus according to the first embodiment of the present invention.

12A, FIG. 12B, and FIG. 12C are schematic diagrams showing the flow rate of the gas and the like which flow through the exhaust passage of the film forming apparatus according to the first embodiment of the present invention.

Fig. 13 is a schematic view showing a state in which the flow rate of the gas flowing through the exhaust passage of the first embodiment of the present invention is adjusted.

14A and FIG. 14B are schematic diagrams showing the internal pressure and the like of the vacuum vessel during the treatment according to the first embodiment of the present invention.

Fig. 15 is a view showing a state in which the first reaction gas and the second reaction gas are separated by a separation gas and exhausted by the separation gas in the first embodiment of the present invention.

Fig. 16 is a schematic view showing an example of a film forming apparatus according to a second embodiment of the present invention.

Fig. 17 is a flow chart showing an example of an exhaust gas flow rate adjusting process in the second embodiment of the present invention.

Fig. 18 is a schematic view showing another example of the film forming apparatus of the second embodiment of the present invention.

19A and 19B are explanatory views for explaining an example of the size of a convex portion used in the separation region according to the second embodiment of the present invention.

Fig. 20 is a longitudinal sectional view showing another example of the separation region in the second embodiment of the present invention.

21A, 21B, and 21C are longitudinal cross-sectional views showing other examples of the convex portions used in the separation region according to the second embodiment of the present invention.

Figure 22 is a cross-sectional plan view showing a film formation apparatus according to another embodiment of the present invention.

Figure 23 is a cross-sectional plan view showing a film forming apparatus according to another embodiment of the present invention.

Fig. 24 is a schematic perspective view showing the inside of a film forming apparatus according to another embodiment of the present invention.

Figure 25 is a cross-sectional plan view showing a film forming apparatus according to another embodiment of the present invention.

Figure 26 is a longitudinal sectional view showing a film forming apparatus according to another embodiment of the present invention.

Fig. 27 is a schematic plan view showing an example of a substrate processing system using the film forming apparatus of the present invention.

Figure 28 is a longitudinal sectional view showing a film forming apparatus according to another embodiment of the present invention.

Fig. 29 is a schematic view showing an example of a control unit according to another embodiment of the present invention.

Figure 30 is a flow chart showing the process of processing a substrate in another embodiment of the present invention.

Figure 31 is a flow chart showing the process of processing a substrate in another embodiment of the present invention.

Fig. 32 is a longitudinal sectional view taken along line I-I' of the longitudinal section 34 of the film forming apparatus according to the third embodiment of the present invention.

Fig. 33 is a perspective view showing a schematic configuration of the inside of a film forming apparatus according to a third embodiment of the present invention.

Figure 34 is a cross-sectional plan view showing a film formation apparatus according to a third embodiment of the present invention.

35A and 35B are longitudinal cross-sectional views of a treatment region and a separation region in a film formation apparatus according to a third embodiment of the present invention.

Figure 36 is a longitudinal sectional view showing a separation region in a film forming apparatus according to a third embodiment of the present invention.

Fig. 37 is a perspective view showing a reaction gas nozzle of the film forming apparatus according to the third embodiment of the present invention.

Fig. 38 is a view for explaining a flow pattern of a separation gas or a flushing gas in the film forming apparatus of the third embodiment of the present invention.

Figure 39 is a partial cross-sectional perspective view showing a film forming apparatus according to a third embodiment of the present invention.

Fig. 40 is a cross-sectional plan view showing a state in which an exhaust system is provided in a film forming apparatus according to a third embodiment of the present invention.

Fig. 41 is a view showing a state in which the first reaction gas and the second reaction gas are separated by a separation gas and exhausted by the separation gas in the third embodiment of the present invention.

Figure 42 is a cross-sectional plan view showing a modification of the film forming apparatus of the third embodiment of the present invention.

43A and 43B are views showing an example of the size of a convex portion used in the separation region according to the third embodiment of the present invention.

Figure 44 is a cross-sectional plan view showing a film forming apparatus according to another embodiment of the present invention.

Figure 45 is a cross-sectional plan view showing a film forming apparatus according to another embodiment of the present invention.

Figure 46 is a longitudinal sectional view showing a film forming apparatus according to another embodiment of the present invention.

Fig. 47 is a schematic plan view showing another example of a substrate processing system using the film forming apparatus of the present invention.

1. . . Vacuum container

2. . . Turntable

5. . . Protruding

7. . . Heater unit

11. . . roof

12. . . Container body

13. . . O-ring

14. . . Bottom part

20. . . case

twenty one. . . Axis

twenty two. . . Rotary axis

twenty three. . . Drive department

45. . . Second top surface

51. . . Separate gas supply pipe

61, 62. . . exhaust vent

63a, 63b. . . Exhaust passage

64a, 64b. . . Vacuum pump

65a, 65b. . . valve

66a, 66b. . . Treatment pressure detecting mechanism

67a, 67b. . . Pressure detecting mechanism

71. . . Shading component

72, 73. . . Flush gas supply pipe

80. . . Control department

C. . . Central area

E1, E2. . . Exhaust area

Claims (48)

A film forming apparatus for sequentially supplying at least two reaction gases which react with each other to a surface of a substrate in a vacuum vessel, and laminating a plurality of reaction product layers by performing such a supply cycle to form a film. The rotary table is provided in the vacuum container and includes a substrate mounting region for mounting the substrate, and the first reaction gas supply mechanism supplies the first reaction to one side of the substrate mounting region side of the turntable. The second reaction gas supply means is provided in the circumferential direction of the turntable away from the first reaction gas supply means, and supplies the second reaction gas toward one side of the substrate mounting region side of the turntable; the separation region is a first processing region in which the first reaction gas is supplied in the circumferential direction and a second processing region in which the second reaction gas is supplied; the first exhaust passage is in the first processing region and the separation region An exhaust port is provided between the second processing region and the separation region; and the first vacuum exhausting mechanism is connected to the first through the first valve. a second air evacuation mechanism connected to the second exhaust passage through the second valve; the first pressure detecting mechanism is interposed between the first valve and the first vacuum exhaust mechanism; a pressure detecting mechanism interposed between the second valve and the second vacuum exhausting mechanism; and a processing pressure detecting mechanism provided at least at any one of the first valve and the second valve; and a control unit And outputting a control signal for controlling the degree of opening of the first valve and the second valve based on the pressure detection values detected by the first pressure detecting means and the second pressure detecting means, so that the pressure in the vacuum container And the gas flow ratios respectively flowing through the first exhaust passage and the second exhaust passage can reach respective set values. The film forming apparatus of claim 1, wherein the control unit includes a program for performing the following steps: the first step is to adjust the opening degree of the first valve so that the pressure value of the processing pressure detecting mechanism can be reached. The set value; and the second step, the degree of opening of the second valve is then adjusted such that the flow ratio can reach a set value. The film forming apparatus of claim 2, wherein the program repeatedly performs the first step and the second step within a preset execution number range until the pressure in the vacuum container and the flow rate ratio are respectively Until the set value is reached. The film forming apparatus of claim 2, wherein the program includes a third step performed after the second step, wherein at least one of the first vacuum exhausting mechanism and the second vacuum exhausting mechanism is adjusted The exhaust flow rate of one such that the flow ratio can reach a set value. The film forming apparatus of claim 4, wherein the program performs the first step and the second step repeatedly within a predetermined number of execution times after performing the third step until the vacuum container The pressure and the flow ratio can each reach a set value. The film forming apparatus of claim 1, wherein the control unit outputs a control signal to supply an inert gas from the first reaction gas supply mechanism and the second reaction gas supply mechanism, and adjust the vacuum container. After the pressure and the flow rate ratio, the gas supplied from the first reaction gas supply means and the second reaction gas supply means is switched to the first reaction gas and the second reaction gas to perform a film formation process. A film forming apparatus for sequentially supplying at least two reaction gases which react with each other to a surface of a substrate in a vacuum vessel, and laminating a plurality of reaction product layers by performing such a supply cycle to form a film. The rotary table is provided in the vacuum container and includes a substrate mounting region for mounting the substrate, and the first reaction gas supply mechanism supplies the first surface of the substrate mounting region side of the turntable. a reaction gas supply mechanism, wherein the second reaction gas supply means is provided in the circumferential direction of the turntable away from the first reaction gas supply means, and supplies the second reaction gas toward one side of the substrate mounting region side of the turntable; a first processing region in which the first reaction gas is supplied in the circumferential direction and a second processing region in which the second reactive gas is supplied; the first exhaust passage is in the first processing region and the first processing region An exhaust port is provided between the separation regions; the second exhaust passage has an exhaust port between the second processing region and the separation region; and the first vacuum exhaust mechanism is connected through the first valve To the first exhaust passage; the second vacuum exhausting mechanism is connected to the second exhaust passage through the second valve; and the first processing pressure detecting means is provided in the first valve and the first processing region The second processing pressure detecting means is disposed between the second valve and the second processing region; and the control portion is detected by the first processing pressure detecting means and the second processing pressure detecting means Each of the pressure detection values outputs a control signal for controlling the degree of opening of the first valve and the second valve, so that the pressure in the vacuum container and the pressure difference between the first processing region and the second processing region can be reached. The set values set by each. The film forming apparatus of claim 7, wherein the control unit includes a program for performing the following steps: the first step of adjusting the opening degree of the first valve such that the pressure value of the first processing pressure detecting mechanism The set value can be reached; and in the second step, the degree of opening of the second valve is then adjusted so that the pressure difference can reach the set value. The film forming apparatus of claim 8, wherein the program repeatedly performs the first step and the second step within a preset execution number range until the pressure in the vacuum container and the pressure difference can each be Until the set value is reached. The film forming apparatus of claim 8 or 9, wherein the program includes a third step performed after the second step, wherein the first vacuum exhausting mechanism and the second vacuum exhausting mechanism are adjusted At least one of the exhaust flow rates such that the pressure differential can reach a set value. The film forming apparatus of claim 10, wherein the program performs the third step and the second step repeatedly in a predetermined range of execution times after performing the third step until the vacuum container The pressure and the pressure difference can each reach a set value. The film forming apparatus of claim 7, wherein the control unit outputs a control signal to supply an inert gas from each of the first reaction gas supply mechanism and the second reaction gas supply mechanism to adjust the vacuum container. After the pressure and the pressure difference, the gas supplied from the first reaction gas supply means and the second reaction gas supply means is switched to the first reaction gas and the second reaction gas, respectively, to perform a film formation process. The film forming apparatus of claim 6, wherein the total flow rate of the gas supplied into the vacuum vessel is set to the same value before and after switching the gas. A film forming apparatus according to claim 1, wherein the first vacuum exhausting mechanism and the second vacuum exhausting mechanism that are connected to the first exhaust passage and the second exhaust passage are replaced by The first exhaust passage and the second exhaust passage merge, and a common vacuum exhaust mechanism is connected to the manifold. The film forming apparatus of claim 1, wherein the separation area has a top surface located at both sides of the separating direction of the separating gas supply mechanism, and is formed between the rotating table and the separating gas. The separation area flows to a narrow space on the side of the treatment area. The film forming apparatus of claim 1, comprising a central portion region for separating an atmosphere of the first processing region and the second processing region, which is located at a central portion of the vacuum container, and is formed a separation gas is ejected to a discharge hole on a substrate mounting surface side of the turntable; the reaction gas system is separated from the separation gas diffused to both sides of the separation region and the separation gas ejected from the central portion region Discharged. The film forming apparatus of claim 10, wherein the central portion is formed by dividing a center portion of the turntable of the turntable from an upper side of the vacuum container and rinsing the region by separating gas. A substrate processing apparatus including: a vacuum transfer chamber in which a substrate transfer mechanism is provided; and a film formation device according to claim 1 is airtightly connected to the vacuum transfer chamber; and a vacuum preparation chamber The air transfer chamber is hermetically connected, and the atmosphere can be switched between a vacuum atmosphere and an atmospheric atmosphere. A film forming method is characterized in that at least two kinds of reaction gases which react with each other are sequentially supplied to a surface of a substrate in a vacuum vessel, and a plurality of reaction product layers are laminated by performing such a supply cycle to form a film. a process for rotating a turntable in which the substrate is placed almost horizontally in the vacuum container; a process of rotating the turntable; and a surface of the first reaction gas supply mechanism facing the substrate mounting region side of the turntable a process of supplying the first reaction gas to the first processing region; the second reaction gas supply mechanism provided in the circumferential direction away from the turntable, facing the surface of the turntable on the substrate mounting region side, the second a process of supplying the reaction gas to the second treatment zone; and a process of supplying the separation gas by the separation gas supply means provided in the separation zone between the first reaction gas supply means and the second reaction gas supply means; a first exhaust passage having an exhaust port between the first processing region and the separation region, and discharging the first reaction gas in the first processing region from the first vacuum exhausting mechanism And a process of discharging the second reaction gas in the second processing region from the second vacuum exhausting mechanism by the second exhaust passage having an exhaust port between the second processing region and the separation region; detecting a pressure in the vacuum container, a first pressure interposed between the first valve of the first exhaust passage and the first vacuum exhaust mechanism, and a second valve and the second valve inserted in the second exhaust passage a process of the second pressure between the vacuum exhaust mechanisms; and adjusting the opening degree of the first valve and the second valve according to the respective pressure detection values detected by the detection process to make the pressure in the vacuum container and the respective The gas flow rate ratio of the first exhaust passage and the second exhaust passage can be set to a respective set value. The film forming method of claim 19, wherein the adjusting process comprises: a first step of adjusting an opening degree of the first valve so that a pressure value in the vacuum container can reach a set value; and a second In the step, the opening degree of the second valve is adjusted so that the flow ratio can reach the set value. The film forming method of claim 20, wherein the adjusting process comprises: a process of setting a number of execution steps; and repeatedly performing the first step and the second in a range of execution times set by the setting process The process is until the pressure in the vacuum vessel and the flow ratio can each reach a set value. The film forming method of claim 20, wherein the adjusting process includes a third step performed after the second step, wherein the first vacuum exhausting mechanism and the second vacuum exhausting mechanism are adjusted At least one of the exhaust flow rates such that the flow ratio can reach a set value. The film forming method of claim 22, wherein the adjusting process comprises: a process of setting a number of execution steps after performing the third step; and repeatedly executing within a range of execution times set by the setting process The first step and the second step until the pressure in the vacuum vessel and the flow ratio can each reach a set value. The film forming method of claim 19, wherein the adjusting process supplies an inert gas from the first reaction gas supply means and the second reaction gas supply means to adjust the gas before the supply of the reaction gas process a process of the pressure in the vacuum vessel and the flow rate ratio; the reaction gas supply process is a gas supplied from the first reaction gas supply mechanism and the second reaction gas supply mechanism after the adjustment process The process of switching the first reaction gas and the second reaction gas to supply the gas. A film forming method is characterized in that at least two kinds of reaction gases which react with each other are sequentially supplied to a surface of a substrate in a vacuum vessel, and a plurality of reaction product layers are laminated by performing such a supply cycle to form a film. Provided is a process for rotating a substrate on a turntable in which the substrate is placed almost horizontally; a process of rotating the turntable; and a surface of the first reaction gas supply mechanism facing the substrate mounting region of the turntable; The first reaction gas is supplied to the first processing region; the second reaction gas is supplied from the second reaction gas supply means provided in the circumferential direction away from the turntable toward the substrate mounting region side of the turntable. a process of supplying the separation gas to the second processing region; and a process of supplying the separation gas by the separation gas supply mechanism provided in the separation region between the first reaction gas supply mechanism and the second reaction gas supply mechanism; a first exhaust passage having an exhaust port between the processing region and the separation region, and exhausting from the first vacuum exhausting mechanism for the first processing region, and a second exhaust passage having an exhaust port between the second processing region and the separation region, and a process of exhausting the second evacuation mechanism from the second processing region; and detecting the insertion into the first exhaust a detection process of a first pressure between the first valve of the passage and the first treatment zone, and a second pressure interposed between the second valve of the second exhaust passage and the second treatment zone; and according to the detection The pressure detection values detected by the process adjust the opening degree of the first valve and the second valve such that the pressure in the vacuum container and the pressure difference between the first processing region and the second processing region can be reached. The process of setting the values set by each. The film forming method of claim 25, wherein the adjusting process comprises: a first step of adjusting an opening degree of the first valve so that a pressure value in the vacuum container can reach a set value; and a second In the step, the degree of opening of the second valve is adjusted so that the pressure difference can reach a set value. The film forming method of claim 26, wherein the adjusting process comprises: setting a process for setting a number of execution steps; and repeatedly performing the first step and the first within a range of execution times set by the setting process 2 steps, until the pressure in the vacuum vessel and the pressure difference can each reach the set value. The film forming method of claim 26, wherein the adjusting process includes a third step performed after the second step, wherein the first vacuum exhausting mechanism and the second vacuum exhausting mechanism are adjusted At least one of the exhaust flow rates such that the pressure differential can reach a set value. The film forming method of claim 28, wherein the adjusting process comprises: setting a process for setting the number of execution steps after performing the third step; and repeatedly repeating the number of execution times set in the setting process The first step and the second step are performed until the pressure in the vacuum vessel and the pressure difference can each reach a set value. The film forming method of claim 25, wherein the adjusting process is to supply an inert gas from the first reaction gas supply means and the second reaction gas supply means before the supply of the reaction gas process to adjust the method a pressure in the vacuum vessel and a process of the pressure difference; the reaction gas supply process is a gas supplied from the first reaction gas supply mechanism and the second reaction gas supply mechanism after the adjustment process The process of switching the first reaction gas and the second reaction gas to supply the gas. The film forming method of claim 24, wherein the total flow rate of the gas supplied into the vacuum vessel is set to the same value before and after switching the gas. The film forming method of claim 19, wherein the exhaust gas processing system replaces the first vacuum exhausting mechanism and the second vacuum exhausting mechanism respectively connected to the first exhaust passage and the second exhaust passage And the first exhaust passage and the second exhaust passage are merged, and the common vacuum exhaust mechanism is connected to the merge passage, and the first processing region and the first portion are connected by the common vacuum exhaust mechanism 2 The process of discharging each atmosphere of the treatment area. The film forming method of claim 19, wherein the process of preventing the intrusion of the reaction gas into the separation region is performed by the rotary table and the vacuum vessel top formed at both sides of the rotation direction of the separation gas supply mechanism A narrow space between the faces, and the separation gas is supplied from the separation region to the process on the processing region side. The film forming method of claim 19, wherein the method comprises: rinsing a central portion of the central portion of the vacuum container with a separation gas, and ejecting the separation gas to the discharge port formed by the central portion a process of the substrate mounting surface side of the turntable; and a process of discharging the reaction gas from the exhaust port together with the separated gas diffused to both sides of the separation region and the separated gas ejected from the central portion . The film forming method of claim 34, wherein the center portion is formed by dividing a center portion of the turntable of the turntable and an upper side of the vacuum container, and is a region to be flushed by separating gas. A memory device storing a film forming apparatus in which at least two kinds of reaction gases which react with each other are sequentially supplied to a surface of a substrate, and a plurality of reaction product layers are laminated by performing such a supply cycle to form a thin film. The program to be used is characterized in that the program consists of a group of steps for carrying out the film forming method of claim 19 of the patent application. A film forming apparatus for sequentially supplying at least two reaction gases which react with each other to a surface of a substrate in a vacuum vessel, and laminating a plurality of reaction product layers by performing such a supply cycle to form a film. The rotary table is provided in the vacuum container and includes a substrate mounting region for mounting the substrate, and the first reaction gas supply mechanism supplies the first surface of the substrate mounting region side of the turntable. a structure of the reaction gas; the second reaction gas supply means is provided in the circumferential direction of the turntable away from the first reaction gas supply means, and supplies the second reaction gas toward one side of the substrate mounting region side of the turntable. a structure; the separation region is located between the first treatment region to which the first reaction gas is supplied in the circumferential direction and the second treatment region to which the second reaction gas is supplied; and the top surface is formed between the turntable and the turntable a narrow space at both sides of the separating direction of the separating gas supply mechanism, so that the separating gas flows from the separating region to the processing region side; the central portion region is located a central portion of the vacuum container is formed with a discharge hole for discharging the separation gas onto the substrate mounting surface side of the turntable; the first exhaust passage is provided between the first processing region and the separation region a second exhaust passage having an exhaust port between the second processing region and the separation region; a first vacuum exhausting mechanism connected to the first exhaust passage; and a second vacuum exhaust The gas mechanism is connected to the second exhaust passage. The film forming apparatus of claim 37, wherein an exhaust port of the first exhaust passage and an exhaust port of the second exhaust passage are disposed below the turntable, by the periphery of the turntable and the vacuum The gap between the inner walls of the container discharges the first reaction gas and the second reaction gas from the first processing region and the second processing region. The film forming apparatus of claim 37, wherein the first vacuum exhausting means and the second vacuum exhausting means are provided with the first vacuum exhausting means and the second vacuum exhausting means The first waste disposal device and the second waste treatment device that discharge the waste separately from the facility. The film forming apparatus of claim 37, wherein the pressure of the separation zone is higher than the pressure of the treatment zone. The film forming apparatus of claim 37, wherein the gas discharge hole of the separation gas supply means is provided by one side of the rotation center portion of the turntable and a peripheral portion thereof toward the other side. The film forming apparatus of claim 37, wherein the film forming apparatus is provided with a heating mechanism for heating the turntable. The film forming apparatus of claim 37, wherein a top surface of the narrow space is formed on both sides of the separation gas supply mechanism, and a width dimension of a portion passing through the center of the substrate in a rotation direction of the turntable is 50 mm or more. The film forming apparatus of claim 37, wherein a width of the turning direction is higher at a top surface of the separating region with respect to a portion of the rotating table of the separating gas supply mechanism in a direction of an upstream side of the rotating direction toward a periphery Big. The film forming apparatus of claim 44, wherein the top surface of the separation region forms a sector with respect to a portion of the rotary table of the separation gas supply mechanism on the upstream side in the rotation direction. A film forming method is characterized in that at least two kinds of reaction gases which react with each other are sequentially supplied to a surface of a substrate in a vacuum vessel, and a plurality of reaction product layers are laminated by performing such a supply cycle to form a film. A process for rotating a turntable in which the substrate is placed almost horizontally in the vacuum container, and a process of rotating the turntable; and from the first reaction gas supply mechanism toward the substrate mounting region side of the turntable a process of supplying the first reaction gas to the first processing region; and the second reaction gas supply mechanism provided in the circumferential direction away from the turntable is directed to the surface of the turntable on the substrate mounting region side The second reaction gas is supplied to the second processing region; the separation gas is supplied by the separation gas supply mechanism provided in the separation region between the first reaction gas supply mechanism and the second reaction gas supply mechanism, so that a process for diffusing the separation gas to a narrow space between the top surface of the turntable and the turntable at both sides in the direction of rotation of the separation gas supply mechanism; a discharge port formed in a central portion of the central portion of the vacuum container, wherein the separation gas is ejected to a substrate mounting surface side of the turntable; and the first processing region and the separation region have a row The first exhaust passage of the gas port discharges the separation gas and the first reaction gas, and the separation gas is separated by a second exhaust passage having an exhaust port between the second treatment region and the separation region a process of discharging the second reaction gas; and discharging the separation gas and the first reaction gas from a first vacuum exhaust mechanism connected to the first exhaust passage, and connecting from the second exhaust passage The second vacuum exhausting means discharges the separated gas and the second reactive gas. The film forming method of claim 46, wherein the process of discharging the reaction gas by using the separation gas alone from the first processing region and the second processing region is performed by the periphery of the turntable and the vacuum container The gap between the inner walls is the atmosphere of the first processing region and the second processing region from the exhaust port of the first exhaust passage and the exhaust port of the second exhaust passage provided below the turntable. Discharged process. The film forming apparatus of claim 46, wherein the film is discharged from the first vacuum exhausting means and the second vacuum exhausting means, and the first waste treating apparatus and the first waste treating apparatus are separately The second waste treatment device performs a waste treatment process.