TWI428973B - Substrate strip with multi fiducial marks and its cutting method during encapsulating - Google Patents

Substrate strip with multi fiducial marks and its cutting method during encapsulating Download PDF

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TWI428973B
TWI428973B TW99137535A TW99137535A TWI428973B TW I428973 B TWI428973 B TW I428973B TW 99137535 A TW99137535 A TW 99137535A TW 99137535 A TW99137535 A TW 99137535A TW I428973 B TWI428973 B TW I428973B
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alignment mark
substrate strip
substrate
cutting
solder mask
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TW99137535A
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Chinese (zh)
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TW201220379A (en
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Shin Hui Huang
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Powertech Technology Inc
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Description

多對位標記之基板條構造及其封裝時的切割方法Multi-alignment mark substrate strip structure and cutting method thereof

本發明係有關於半導體裝置之晶片載體,特別係有關於一種多對位標記之基板條構造及其封裝時的切割方法。The present invention relates to a wafer carrier for a semiconductor device, and more particularly to a substrate strip structure for a multi-alignment mark and a method of cutting the same when packaged.

現今市場上的半導體裝置均是採用成批方式來製作,利用格柵交錯之切割道預先於如印刷電路板之基板條之表面定義出複數個呈矩陣排列之基板單元,再經過黏晶(die bond)、打線(wire bond)以及封裝(encapsulation)等製程。在封裝完成之後,大多需要先進行切割作業,以將該些基板單元由該基板條分離,進而形成為個別的半導體封裝構造,或者將多個半導體封裝構造堆疊並整合成一層疊封裝(package on package,POP),以供應予市場之各種不同需求。雖然基板條之表面定義有若干個切割道,但通常在切割製程中仍必須依據位於對位標記作為定位點基準,以對基板條進行切割動作。而對位標記一般是位於基板條之周邊,或者是位於基板單元四個角落在切割道交會處。The semiconductor devices on the market today are all fabricated in a batch manner, and a plurality of substrate units arranged in a matrix are defined in advance on the surface of the substrate strip of the printed circuit board by using the retort of the grid, and then the die is bonded. Bond), wire bond, and encapsulation processes. After the package is completed, most of the cutting operations are required to separate the substrate units from the substrate strip, thereby forming individual semiconductor package structures, or stacking and integrating a plurality of semiconductor package structures into a package package. , POP), to supply the various needs of the market. Although the surface of the substrate strip defines a plurality of dicing streets, it is usually necessary to perform a cutting operation on the substrate strip in accordance with the alignment mark as a positioning point reference in the cutting process. The alignment mark is generally located at the periphery of the substrate strip, or at the intersection of the cutting path at the four corners of the substrate unit.

如第1圖所示,一種習知銲罩層界定墊(SMD pad)之基板條構造100,特別是應用於層疊封裝(POP)之基板條,主要包含一基板條本體110與一銲罩層,該基板條本體110係具有複數個呈矩陣排列之基板單元113,並且在該基板條本體110之植球面上形成有複數個外接墊120與複數個電鍍線130。該些外接墊120係位於該些基板單元113內,該些電鍍線130係交錯排列於該些基板單元113之間與周邊。該銲罩層之複數個連接孔141係局部顯露出該些外接墊120,也就是說該些連接孔141係小於該些外接墊120而包覆該些外接墊120之周邊,使得該些外接墊120為銲罩界定(solder mask defined,SMD)型態。此外,該銲罩層之複數個開孔142係顯露位於該些基板單元113之間之該些電鍍線130。其中,該些電鍍線130係呈十字交叉於該些基板單元113之角隅,在該些開孔142之顯露下,進而形成為複數個非銲罩界定對位標記132在切割道之交會處,以作為切割時的基準。如此,不需要將對位標記設計於該些基板單元113內,又最接近該些基板單元113,符合高密度封裝之精準對位切割道之需求。As shown in FIG. 1 , a conventional substrate strip structure 100 for a SMD pad, in particular, a substrate strip for a package (POP), mainly comprising a substrate strip body 110 and a solder mask layer. The substrate strip body 110 has a plurality of substrate units 113 arranged in a matrix, and a plurality of external pads 120 and a plurality of plating lines 130 are formed on the ball-forming surface of the substrate strip body 110. The external pads 120 are located in the substrate units 113. The plating lines 130 are staggered between the substrate units 113 and the periphery. The plurality of connection holes 141 of the solder mask layer partially expose the external pads 120, that is, the connection holes 141 are smaller than the outer pads 120 to cover the periphery of the external pads 120, so that the external connections Pad 120 is a solder mask defined (SMD) type. In addition, the plurality of openings 142 of the solder mask layer expose the plating lines 130 between the substrate units 113. The plating lines 130 are crossed at the corners of the substrate units 113. Under the exposure of the openings 142, a plurality of non-welding covers are defined to define the alignment marks 132 at the intersection of the cutting paths. As a benchmark when cutting. In this way, it is not necessary to design the alignment mark in the substrate unit 113, and the closest to the substrate unit 113, which meets the requirements of the precise alignment cutting channel of the high-density package.

如第2A圖所示,以往該基板條構造100在理想狀態下,該銲罩層與該基板條本體110應為無偏移之情況,原始基板條設計中該銲罩層之該些連接孔141應對準位於該些外接墊120之中央部位,並且該些開孔142應完整顯露該些非銲罩界定對位標記132。在對該基板條本體110進行切割動作以分離該些基板單元113之後,該些外接墊120顯露於該些連接孔141之部位與該些基板單元113之邊緣可保持預定距離,使得例如銲球等外接端子設置之後亦不會太靠近已切割封裝構造之邊緣。然而,如第2B圖所示,事實上因為機台精度與銲罩層製造之製程公差,該銲罩層與該基板條本體110並不能如上述理想狀態般呈現無偏移之情況,該銲罩層之偏移的標準公差為+/-50微米(μm)。當該銲罩層發生偏移時,表示該銲罩層所有之該些連接孔141及該些開孔142皆會產生偏移,即該些連接孔141之位置改變而無法對準於該些外接墊120之中央部位,甚至偏移至該些外接墊120之周邊,進而導致外接端子的偏移。然而,在切割時仍以該些非銲罩界定對位標記132之中心作為基準,將使得該些外接墊120顯露於該些連接孔141之部位與該些基板單元113之邊緣的距離改變。因此,在設置外接端子於該些外接墊120顯露於該些連接孔141之部位後,會使得外接端子與切割後封裝構造之邊緣的距離過於靠近,導致外接端子的分佈位置與原始設計的腳位位置不同,進而造成後續表面接合時各種可能的問題。As shown in FIG. 2A, in the prior art, the substrate strip structure 100 should have no offset when the solder mask layer and the substrate strip body 110 are ideal. The connection holes of the solder mask layer in the original substrate strip design. The 141 should be aligned at the central portion of the outer pads 120, and the openings 142 should completely reveal the non-welding caps defining the alignment marks 132. After the substrate strip body 110 is subjected to a cutting operation to separate the substrate units 113, the portions of the external pads 120 exposed to the connection holes 141 may be kept at a predetermined distance from the edges of the substrate units 113, such as solder balls. After the external terminals are set, they are not too close to the edge of the cut package structure. However, as shown in FIG. 2B, in fact, because of the precision of the machine and the process tolerance of the manufacturing of the solder mask layer, the solder mask layer and the substrate strip body 110 do not exhibit an offset as in the above ideal state. The standard tolerance of the offset of the cover layer is +/- 50 micrometers (μm). When the solder mask layer is offset, it indicates that all the connection holes 141 and the openings 142 of the solder mask layer are offset, that is, the positions of the connection holes 141 are changed and cannot be aligned with the holes. The central portion of the external pad 120 is even offset to the periphery of the external pads 120, thereby causing the offset of the external terminals. However, the center of the alignment mark 132 is defined by the non-welding caps as a reference during the cutting, and the distance between the portions of the external pads 120 exposed by the connecting holes 141 and the edges of the substrate units 113 is changed. Therefore, after the external terminals are disposed on the portions of the external pads 120 exposed by the connecting holes 141, the distance between the external terminals and the edge of the packaged package structure is too close, resulting in the distribution position of the external terminals and the original design feet. The position of the bit is different, which in turn causes various possible problems in subsequent surface bonding.

有鑒於此,本發明之主要目的係在於提供一種多對位標記之基板條構造及其封裝時的切割方法,可提升封裝構造於切割完成的精準度,以避免封裝後外接端子太靠近已切割封裝構造之邊緣。In view of this, the main object of the present invention is to provide a multi-paragraph substrate strip structure and a cutting method thereof, which can improve the precision of the package structure in cutting, so as to avoid the external terminal being too close to the cut after packaging. The edge of the package construction.

本發明的目的及解決其技術問題是採用以下技術方案來實現的。本發明揭示一種多對位標記之基板條構造,包含一基板條本體、複數個外接墊、複數個電鍍線以及一銲罩層。該基板條本體係具有一模封面與一植球面,該基板條本體內為複數個一體構成並呈矩陣排列之基板單元與複數個位於該些基板單元之間與周邊的切割道,其中該些切割道係包含至少一X軸切割道與至少一Y軸切割道。該些外接墊係設置於該植球面上並位於該些基板單元內。該些電鍍線係設置於該植球面上且位於該些切割道內,並於該X軸切割道與該Y軸切割道之交會處形成有一金屬墊,以及於該基板條本體之周邊形成有一第一非銲罩界定對位標記與一第二非銲罩界定對位標記,分別位於該X軸切割道與該Y軸切割道內。該銲罩層係形成於該植球面上,該銲罩層係具有複數個顯露該些外接墊之連接孔、一局部顯露該金屬墊之對位孔以及複數個顯露該第一非銲罩界定對位標記與該第二非銲罩界定對位標記之開孔,其中該些連接孔係小於該些外接墊,以使該些外接墊為銲罩界定型態,並且該金屬墊顯露於該對位孔之部位係形成為一銲罩界定對位標記,其中該第一非銲罩界定對位標記與該第二非銲罩界定對位標記係鄰近於該金屬墊,作為用以計算該銲罩界定對位標記之位偏差值之基準點。本發明另揭示適用於上述多對位標記之基板條構造封裝時的切割方法。The object of the present invention and solving the technical problems thereof are achieved by the following technical solutions. The invention discloses a substrate strip structure of a multi-alignment mark, comprising a substrate strip body, a plurality of external pads, a plurality of plating lines and a solder mask layer. The substrate strip system has a die cover and a ball-forming surface, and the substrate strip body is a plurality of substrate units integrally formed and arranged in a matrix, and a plurality of cutting paths between the substrate units and the periphery, wherein the substrate strips The cutting channel comprises at least one X-axis cut and at least one Y-axis cut. The external pads are disposed on the ball placement surface and located in the substrate units. The plating lines are disposed on the ball-forming surface and located in the cutting lanes, and a metal pad is formed at the intersection of the X-axis cutting channel and the Y-axis cutting track, and a periphery is formed on the periphery of the substrate strip body. The first non-weld cover defines an alignment mark and a second non-weld cover define an alignment mark, respectively located in the X-axis cut track and the Y-axis cut track. The solder mask layer is formed on the ball-covering surface, the solder mask layer has a plurality of connecting holes for exposing the external pads, a matching hole for partially exposing the metal pads, and a plurality of exposed first first solder masks The alignment mark and the second non-welding cover define an opening of the alignment mark, wherein the connection holes are smaller than the external pads, so that the external pads are of a solder mask defining type, and the metal pad is exposed to the The portion of the alignment hole is formed as a solder mask defining an alignment mark, wherein the first non-weld cover defining the alignment mark and the second non-weld cover defining the alignment mark are adjacent to the metal pad as The weld cap defines a reference point for the offset value of the alignment mark. The present invention further discloses a cutting method suitable for use in the substrate strip structure package of the above multi-alignment mark.

本發明的目的及解決其技術問題還可採用以下技術措施進一步實現。The object of the present invention and solving the technical problems thereof can be further achieved by the following technical measures.

在前述之基板條構造中,該對位孔與該些非銲罩界定對位標記係可為十字形。In the foregoing substrate strip configuration, the alignment hole and the non-welded cover defining the alignment mark may be in a cross shape.

在前述之基板條構造中,該銲罩層係可覆蓋該些電鍍線在該金屬墊、該第一非銲罩界定對位標記與該第二非銲罩界定對位標記之外之部位。In the foregoing substrate strip construction, the solder mask layer may cover the portions of the plating line outside the metal pad, the first non-weld cover defining the alignment mark and the second non-weld cover defining the alignment mark.

在前述之基板條構造中,該些外接墊係可為周邊排列。In the foregoing substrate strip construction, the external pads may be peripherally arranged.

在前述之基板條構造中,該些開孔係可為圓形,其孔徑係不小於該銲罩界定對位標記之位偏差值的兩倍。In the foregoing substrate strip construction, the openings may be circular, and the aperture is not less than twice the value of the position deviation of the alignment mark defined by the solder mask.

由以上技術方案可以看出,本發明之多對位標記之基板條構造及其封裝時的切割方法,具有以下優點與功效:一、可藉由電鍍線形成在X軸與Y軸切割道之交會處的金屬墊以及在X軸與Y軸切割道內之第一非銲罩界定對位標記與第二非銲罩界定對位標記以及銲罩層之對位孔局部顯露出金屬墊之一部位而形成為銲罩界定對位標記之特定組合關係作為其中之一技術手段,即使銲罩界定對位標記因銲罩層之對位孔偏移而改變位置,但第一非銲罩界定對位標記與第二非銲罩界定對位標記係不會因銲罩層之開孔偏移而改變其原始位置,所以可作為用以計算銲罩界定對位標記之位偏差的基準點,以利於切割動作之進行。因此,可提升封裝構造於切割完成的精準度,以避免封裝後外接端子太靠近已切割封裝構造之邊緣。It can be seen from the above technical solutions that the multi-paragraph substrate strip structure of the present invention and the cutting method thereof during packaging have the following advantages and effects: 1. The X-axis and Y-axis cutting channels can be formed by electroplating lines. The metal pad of the intersection and the first non-welding cover in the X-axis and Y-axis cutting lane define the alignment mark and the second non-welding cover define the alignment mark and the alignment hole of the welding cover layer partially exposes the metal pad The position is formed as a specific combination relationship of the welding cap defining the alignment mark as one of the technical means, even if the welding cap defines the alignment mark to change position due to the offset of the alignment hole of the welding cap layer, the first non-welding cover defines the pair The bit mark and the second non-weld cover define the alignment mark to not change its original position due to the opening offset of the solder mask layer, so it can be used as a reference point for calculating the deviation of the position mark of the welding cap defining the alignment mark, Conducive to the progress of the cutting action. Therefore, the accuracy of the package construction can be improved, so that the external terminals after packaging are too close to the edge of the cut package structure.

以下將配合所附圖示詳細說明本發明之實施例,然應注意的是,該些圖示均為簡化之示意圖,僅以示意方法來說明本發明之基本架構或實施方法,故僅顯示與本案有關之元件與組合關係,圖中所顯示之元件並非以實際實施之數目、形狀、尺寸做等比例繪製,某些尺寸比例與其他相關尺寸比例或已誇張或是簡化處理,以提供更清楚的描述。實際實施之數目、形狀及尺寸比例為一種選置性之設計,詳細之元件佈局可能更為複雜。The embodiments of the present invention will be described in detail below with reference to the accompanying drawings in which FIG. The components and combinations related to this case, the components shown in the figure are not drawn in proportion to the actual number, shape and size of the actual implementation. Some size ratios are proportional to other related sizes or have been exaggerated or simplified to provide clearer description of. The actual number, shape and size ratio of the implementation is an optional design, and the detailed component layout may be more complicated.

依據本發明之一具體實施例,一種多對位標記之基板條構造舉例說明於第3圖之上視示意圖、第4圖之局部放大示意圖、第5圖依基板條本體之長邊平行方向剖切基板單元之局部截面示意圖以及第6圖沿X軸切割道剖切之局部截面示意圖。該多對位標記之基板條構造200係包含一基板條本體210、複數個外接墊220、複數個電鍍線230與一銲罩層240。According to an embodiment of the present invention, a substrate strip structure of a multi-alignment mark is illustrated in the top view of FIG. 3, a partially enlarged view of FIG. 4, and a fifth view of the long side parallel direction of the substrate strip body. A partial cross-sectional view of a substrate unit and a partial cross-sectional view taken along line X of the X-axis. The multi-alignment substrate strip structure 200 includes a substrate strip body 210, a plurality of external pads 220, a plurality of plating lines 230, and a solder mask layer 240.

請參閱第3圖所示,並配合參酌第5圖,該基板條本體210係具有一模封面211與一植球面212,該基板條本體210內為複數個一體構成並呈矩陣排列之基板單元213與複數個位於該些基板單元213之間與周邊的切割道214,其中該些切割道214係包含至少一X軸切割道214A與至少一Y軸切割道214B。具體而言,該基板條本體210之材質係可為雙馬來醯亞胺-三氮雜苯樹脂(bismaleimide-triazine resin),簡稱BT樹脂,並且該模封面211與該植球面212係為兩相背之表面,如顯現於第3圖中之表面係為該植球面212,該模封面211係位於該植球面212之背面,故該模封面211無法標示於第3圖中。更具體地,該模封面211係作為提供予封膠體形成之表面,而該植球面212係作為用以設置該些外接墊220與該些電鍍線230之表面。其中,該些基板單元211在切割分離之後係可作為半導體封裝構造之晶片載體。其中,所稱之「X軸切割道」係為平行於該基板條構造200之較長邊的切割道,而所稱之「Y軸切割道」則係為平行於該基板條構造200之較短邊的切割道。Referring to FIG. 3, and in conjunction with FIG. 5, the substrate strip body 210 has a mold cover 211 and a ball-fitting surface 212. The substrate strip body 210 is a plurality of substrate units integrally formed and arranged in a matrix. 213 and a plurality of dicing streets 214 located between the substrate unit 213 and the periphery, wherein the dicing streets 214 comprise at least one X-axis dicing street 214A and at least one Y-axis dicing street 214B. Specifically, the material of the substrate strip body 210 may be a bismaleimide-triazine resin (BT), and the mold cover 211 and the spherical surface 212 are two. The opposite surface, such as the surface shown in Fig. 3, is the spherical surface 212, and the mold cover 211 is located on the back side of the spherical surface 212, so the mold cover 211 cannot be labeled in Fig. 3. More specifically, the die cover 211 is used as a surface for providing a sealant, and the ball face 212 is used as a surface for arranging the external pads 220 and the plating wires 230. The substrate unit 211 can be used as a wafer carrier of a semiconductor package structure after dicing and separating. The so-called "X-axis cutting lane" is a cutting lane parallel to the longer side of the substrate strip structure 200, and the so-called "Y-axis cutting lane" is parallel to the substrate strip structure 200. Short side cutting road.

請參閱第4圖所示,並配合參酌第6圖,該些外接墊220係設置於該植球面212上並位於該些基板單元213內,其中該些外接墊220係位於每一基板單元213內,可供例如銲球等外接端子設置,以作為該些基板單元213對外連接之通道。在本實施例中,該些外接墊220係可為周邊排列,例如:可為單排或雙排排列於每一基板單元213之周邊。或者,該些外接墊220亦可為矩陣排列,或設置於該些基板單元213之中央部位或單一側邊,以因應各種不同產品之腳位配置型態。Referring to FIG. 4 , and in conjunction with FIG. 6 , the external pads 220 are disposed on the ball-forming surface 212 and located in the substrate units 213 , wherein the external pads 220 are located in each of the substrate units 213 . The external terminals, such as solder balls, are provided for the external connection of the substrate units 213. In this embodiment, the external pads 220 may be arranged in a perimeter, for example, may be arranged in a single row or in a double row around the periphery of each substrate unit 213. Alternatively, the external pads 220 may be arranged in a matrix or disposed at a central portion or a single side of the substrate units 213 to accommodate the configuration of the pins of different products.

請參閱第4圖所示,並配合參酌第6圖,該些電鍍線230係設置於該植球面212上且位於該些切割道214內,並於該X軸切割道214A與該Y軸切割道214B之交會處形成有一金屬墊231,並且於該基板條本體210之周邊形成有一第一非銲罩界定(non-solder mask defined,NSMD)對位標記232與一第二非銲罩界定(non-solder mask defined,NSMD)對位標記233,該第一非銲罩界定對位標記232係位於該X軸切割道214A內,該第二非銲罩界定對位標記233係位於該Y軸切割道214B內。詳細而言,該些電鍍線230係為用以電鍍該些外接墊220之金屬線,通常該些電鍍線230之材質係可為銅。在本實施例中,在該銲罩層240形成於該基板條本體210之後,可藉由該些電鍍線230形成一電鍍層250披覆於該些外接墊220、該金屬墊231、該第一非銲罩界定對位標記232以及該第二非銲罩界定對位標記233之顯露頂面,並且該電鍍層250之材質係可為鎳金或金,以具有較佳的抗氧化能力。具體而言,該電鍍層250披覆於該些外接墊220,可增加該些外接墊220與外接端子之結合力,而該電鍍層250披覆於該金屬墊231與該些對位標記232、233,能夠使該金屬墊231、該些非銲罩界定對位標記232、233之顯露部位呈現為光亮表面,具有較佳的辨識度。其中,該金屬墊231係恰位於該些電鍍線230兩兩相交之處而可形成為十字形。或者,在一變化例中,該金屬墊231之形狀亦可變更為圓形、正方形、菱形等等。在一較佳型態中,該第一非銲罩界定對位標記232與該第二非銲罩界定對位標記233係可為十字形,有助於辨識出該第一非銲罩界定對位標記232與該第二非銲罩界定對位標記233之中心,但配置於該基板條本體210之不同位置,可分別用以量測該銲罩界定對位標記於Y軸與X軸之位偏差值。Referring to FIG. 4, and in conjunction with FIG. 6, the plating lines 230 are disposed on the ball-forming surface 212 and located in the cutting channels 214, and are cut on the X-axis cutting path 214A and the Y-axis. A metal pad 231 is formed at the intersection of the track 214B, and a first non-solder mask defined (NSMD) alignment mark 232 and a second non-welded cover are defined around the substrate strip body 210 ( Non-solder mask defined, NSMD) alignment mark 233, the first non-weld cover defining alignment mark 232 is located in the X-axis cutting lane 214A, and the second non-welding cover defining alignment mark 233 is located on the Y-axis Inside the cutting lane 214B. In detail, the plating lines 230 are metal wires for plating the external pads 220. Generally, the plating lines 230 may be made of copper. In this embodiment, after the solder mask layer 240 is formed on the substrate strip body 210, a plating layer 250 may be formed on the external pads 220, the metal pads 231, and the first plating layer 230. A non-weld cover defines the alignment mark 232 and the second non-weld cover defines the exposed top surface of the alignment mark 233, and the plating layer 250 is made of nickel gold or gold to have better oxidation resistance. Specifically, the plating layer 250 is coated on the external pads 220 to increase the bonding force between the external pads 220 and the external terminals, and the plating layer 250 is coated on the metal pads 231 and the alignment marks 232. 233, the metal pad 231, the non-welding cover defining the exposed portions of the alignment marks 232, 233 can be presented as a bright surface, and has better recognition. The metal pad 231 is formed in a cross shape just at the intersection of the two electroplating lines 230. Alternatively, in a variant, the shape of the metal pad 231 may also be changed to a circle, a square, a diamond or the like. In a preferred embodiment, the first non-weld cover defining alignment mark 232 and the second non-weld cover defining the alignment mark 233 may be in a cross shape to help identify the first non-weld cover defining pair. The position mark 232 and the second non-welding cover define the center of the alignment mark 233, but are disposed at different positions of the substrate strip body 210, and can be respectively used to measure the welding mask to define the alignment mark on the Y-axis and the X-axis. Bit deviation value.

請參閱第4圖所示,並配合參酌第6圖,該銲罩層240係形成於該植球面212上,該銲罩層240係具有複數個顯露該些外接墊220之連接孔241、一局部顯露該金屬墊231之對位孔242以及複數個顯露該第一非銲罩界定對位標記232與該第二非銲罩界定對位標記233之開孔243。在本實施例中,該銲罩層240係可覆蓋該些電鍍線230在該金屬墊231、該第一非銲罩界定對位標記232與該第二非銲罩界定對位標記233之外之其它部位。通常,該植球面212除了位於該銲罩層240之該些連接孔241、該對位孔242與該些開孔243之部位係呈現顯露狀態之外,該植球面212之其餘線路部位皆應被該銲罩層240所覆蓋遮蔽。其中該些連接孔241係小於該些外接墊220,以使該些外接墊220為銲罩界定(solder mask defined,SMD)型態,並且該金屬墊231顯露於該對位孔242之部位係形成為一銲罩界定(solder mask defined,SMD)對位標記,即覆蓋該金屬墊231之周邊,所以該銲罩界定對位標記之中心係由該對位孔242的形狀尺寸來決定,而該對位孔242之位置偏移方向與偏移量係與該銲罩層240之該些連接孔241之位置偏移方向與偏移量為同步。在一較佳型態中,該對位孔242係可為十字形,該金屬墊231顯露於該對位孔242之部位呈現鍍金十字之型態,更有利於辨識其中心位置。此外,該些開孔243係可為圓形,其孔徑係不小於該銲罩界定對位標記之位偏差值的兩倍,如一般銲罩層偏移的標準公差為+/-50微米(μm),則該些開孔243之孔徑係可設計為不小於100微米(μm),以確保在該銲罩層240偏移之後該些開孔243仍可顯露出該第一非銲罩界定對位標記232與該第二非銲罩界定對位標記233的中心點。特別的是,該第一非銲罩界定對位標記232與該第二非銲罩界定對位標記233係鄰近於該金屬墊231,作為用以計算該銲罩界定對位標記之位偏差值之基準點,並能界定該X軸切割道214A與該Y軸切割道214B之原始位置。其中,所稱之「鄰近」係指該第一非銲罩界定對位標記232與該金屬墊231之距離以及該第二非銲罩界定對位標記233與該金屬墊231之距離皆不大於該些基板單元213同向邊長的二分之一。一般而言,該些非銲罩界定對位標記232、233至該金屬墊231之距離係約為該些基板單元213同向邊長的三分之一或四分之一。Referring to FIG. 4, and in conjunction with FIG. 6, the solder mask layer 240 is formed on the ball-covering surface 212. The solder mask layer 240 has a plurality of connecting holes 241 for exposing the external pads 220. The alignment holes 242 of the metal pad 231 are partially exposed, and the plurality of openings 243 defining the alignment mark 232 and the second non-welding cover defining the alignment mark 233 are exposed. In this embodiment, the solder mask layer 240 can cover the plating lines 230 outside the metal pad 231, the first non-weld cover defining alignment mark 232 and the second non-welding cover defining the alignment mark 233. Other parts. Generally, the ball-forming surface 212 is in a exposed state except for the connecting holes 241 of the solder mask layer 240, the alignment holes 242 and the openings 243, and the remaining line portions of the ball-forming surface 212 should be Covered by the solder mask layer 240. The connection holes 241 are smaller than the external pads 220, so that the external pads 220 are in a solder mask defined (SMD) type, and the metal pads 231 are exposed at the position of the alignment holes 242. Formed as a solder mask defining (SMD) alignment mark, that is, covering the periphery of the metal pad 231, so the center of the solder mask defining the alignment mark is determined by the shape size of the alignment hole 242, and The positional deviation direction and the offset amount of the alignment hole 242 are in synchronization with the positional deviation direction and the offset amount of the connection holes 241 of the solder mask layer 240. In a preferred embodiment, the alignment hole 242 can be a cross shape, and the metal pad 231 is exposed to the alignment hole 242 to exhibit a gold-plated cross shape, which is more advantageous for identifying the center position. In addition, the openings 243 may be circular, and the aperture is not less than twice the offset value of the alignment mark defined by the solder mask, such as a standard tolerance of a common solder mask offset of +/- 50 micrometers ( Μm), the apertures of the openings 243 can be designed to be no less than 100 micrometers (μm) to ensure that the openings 243 can still reveal the first non-weld mask after the solder mask layer 240 is offset. The alignment mark 232 and the second non-welding cover define a center point of the alignment mark 233. In particular, the first non-weld cover defining alignment mark 232 and the second non-welding cover defining the alignment mark 233 are adjacent to the metal pad 231 as a positional deviation value for calculating the alignment mark of the welding cap. The reference point and can define the original position of the X-axis cutting lane 214A and the Y-axis cutting lane 214B. The term "adjacent" as used herein means that the distance between the first non-welding cover defining the alignment mark 232 and the metal pad 231 and the distance between the second non-welding cover defining the alignment mark 233 and the metal pad 231 are not greater than The substrate units 213 are one-half the length of the same side. In general, the non-welding caps define the alignment marks 232, 233 to the metal pad 231 by a distance of about one-third or one-quarter of the same side length of the substrate units 213.

綜上可知,本發明可藉由該些電鍍線230形成在該X軸切割道214A與該Y軸切割道214B之交會處的該金屬墊231、在該X軸切割道214A與該Y軸切割道214B內之該第一非銲罩界定對位標記232與該第二非銲罩界定對位標記233以及該銲罩層240之該對位孔242局部顯露出該金屬墊231之一部位而形成為該銲罩界定對位標記之特定組合關係作為其中之一技術手段,即使該銲罩界定對位標記因該銲罩層240之該對位孔242偏移而改變位置,但該第一非銲罩界定對位標記232與該第二非銲罩界定對位標記233並不會因該銲罩層240之該些開孔243偏移而改變其原始位置。所以,可利用該第一非銲罩界定對位標記232與該第二非銲罩界定對位標記233計算出該銲罩界定對位標記之位偏差,進而調整切割中心,以修正設置於該些外接墊220之外接端子至封裝構造之邊緣的距離。因此,可提升封裝構造於切割完成的精準度,以避免封裝後外接端子太靠近已切割封裝構造之邊緣。In summary, the present invention can form the metal pad 231 at the intersection of the X-axis dicing street 214A and the Y-axis dicing street 214B by the plating lines 230, and cut the X-axis tangential track 214A and the Y-axis. The first non-welding cover defining alignment mark 232 and the second non-welding cover defining the alignment mark 233 in the track 214B and the alignment hole 242 of the soldering cover layer 240 partially revealing a portion of the metal pad 231 Forming a specific combination relationship of the alignment marks for the solder mask as one of the technical means, even if the solder mask defines the alignment mark to change position due to the offset of the alignment hole 242 of the solder mask layer 240, the first The non-weld cover defining alignment mark 232 and the second non-weld cover defining the alignment mark 233 do not change their original position due to the offset of the openings 243 of the solder mask layer 240. Therefore, the first non-welding cover defining the alignment mark 232 and the second non-welding cover defining the alignment mark 233 can calculate the position deviation of the welding cover defining the alignment mark, thereby adjusting the cutting center to correct the setting The outer pads 220 externally connect the terminals to the edges of the package construction. Therefore, the accuracy of the package construction can be improved, so that the external terminals after packaging are too close to the edge of the cut package structure.

本發明還揭示上述多對位標記之基板條構造200封裝時的切割方法舉例說明於第7A至7C圖,以彰顯本發明之功效。The present invention also discloses a dicing method for packaging the above-described multi-paragraph substrate strip structure 200 as illustrated in FIGS. 7A to 7C to demonstrate the effects of the present invention.

請參閱第7A圖所示,提供如前述之多對位標記之基板條構造200。該多對位標記之基板條構造200係包含該基板條本體210、該些外接墊220、該些電鍍線230與該銲罩層240,由於在第7A圖中係顯示該基板條本體210之該模封面211,所以位於該植球面212之該些外接墊220、該些電鍍線230與該銲罩層240無法標示於第7A圖中,故請配合參酌第3、5與6圖所示。Referring to Figure 7A, a substrate strip construction 200 is provided as described above for the multi-alignment mark. The multi-paragraph substrate strip structure 200 includes the substrate strip body 210, the external pads 220, the plating lines 230 and the solder mask layer 240, since the substrate strip body 210 is shown in FIG. 7A. The die cover 211, so the external pads 220 located on the ball-facing surface 212, the plating lines 230 and the solder mask layer 240 cannot be marked in FIG. 7A, so please refer to the figures 3, 5 and 6 .

請參閱第7B圖所示,將該基板條本體210之該模封面211朝向上方,對該基板條構造200進行封裝動作,其係設置複數個晶片30於該些基板單元213上,並且電性連接該些晶片30至該些基板單元213,例如:可藉由打線方式形成之銲線或是覆晶結合之凸塊電性連接該些晶片30與該些基板單元213。之後,再形成一封膠體40於該基板條本體210之該模封面211,該封膠體40係毋須全面覆蓋於該模封面211,但至少須完整覆蓋住所有之該些基板單元213,以確保在分離成若干個半導體封裝構造後該封膠體40能確實地包覆該些基板單元213,進而提供完善的保護作用。在形成該封膠體40之後,可設置如銲球等外接端子於該些外接墊220,以作為該些基板單元213對外連接之焊接端點。Referring to FIG. 7B, the die strip cover 211 of the substrate strip body 210 faces upward, and the substrate strip structure 200 is packaged. The plurality of wafers 30 are disposed on the substrate units 213, and the electrical The wafers 30 are connected to the substrate units 213. For example, the solder wires or the flip-chip bumps formed by wire bonding can electrically connect the wafers 30 and the substrate units 213. Then, a mold 40 is formed on the mold cover 211 of the substrate strip body 210. The sealant 40 does not need to completely cover the mold cover 211, but at least all of the substrate units 213 must be completely covered to ensure After being separated into a plurality of semiconductor package structures, the encapsulant 40 can surely cover the substrate units 213, thereby providing perfect protection. After the encapsulant 40 is formed, external terminals such as solder balls may be disposed on the external pads 220 to serve as solder terminals for external connection of the substrate units 213.

請參閱第7C圖所示,在完成上述步驟之後,在切割之前,進行一切割道修正之步驟,先固定該基板條構造200,並使該銲罩界定對位標記、該第一非銲罩界定對位標記232以及該第二非銲罩界定對位標記233朝向切割機台內之定位偵測設備。抓取該銲罩界定對位標記與上述具有第一非銲罩界定對位標記232之電鍍線230之間的Y軸位偏差值,並取其兩者之間之一位置作為X軸切割道214A之修正。所稱之「Y軸位偏差值」係指該銲罩界定對位標記(即該對位孔242)之中心在Y軸方向的偏移量,可由該銲罩界定對位標記(即該對位孔242)之中心至在同一X軸切割道內具有該第一非銲罩界定對位標記232之該電鍍線230之最短距離計算而得。並可在該銲罩界定對位標記之中心至具有該第一非銲罩界定對位標記232之電鍍線230之最短距離之間取一適當位置,例如:二分之一或三分之一處,以作為該X軸切割道214A修正後之切割基準。如第7C圖所示,當該銲罩界定對位標記(即該對位孔242)之中心係沿著Y軸向上偏移,則該X軸切割道214A的切割中心線應沿著Y軸向上修正二分之一或三分之二的Y軸位偏差值。同時,抓取該銲罩界定對位標記與上述具有第二非銲罩界定對位標記233之電鍍線230之間的X軸位偏差值,並取其兩者之間之一位置作為Y軸切割道214B之修正。所稱之「X軸位偏差值」係指該銲罩界定對位標記之中心在X軸方向的偏移量,可由該銲罩界定對位標記(即該對位孔242)之中心至在同一Y軸切割道內具有該第二非銲罩界定對位標記233之該電鍍線230之最短距離計算而得。並可在該銲罩界定對位標記之中心至具有該第二非銲罩界定對位標記233之電鍍線230之最短距離之間取一適當位置,例如:二分之一或三分之一處,以作為Y軸切割道214B修正後之切割基準。如第7C圖所示,當該銲罩界定對位標記(即該對位孔242)之中心係沿著X軸向左偏移,則該Y軸切割道214B的切割中心線應沿著X軸向左修正二分之一或三分之二的X軸位偏差值。較佳地,經上述修正動作之後,可使得切割後封裝構造的腳位(即外接端子的分佈位置)偏移公差縮減至+/-30微米(μm),明顯小於該銲罩層240之偏移公差。Referring to FIG. 7C, after the above steps are completed, a cutting path correction step is performed before the cutting, the substrate strip structure 200 is first fixed, and the welding mask defines the alignment mark, the first non-welding cover. The alignment mark 232 and the second non-weld cover define the alignment mark 233 toward the position detecting device in the cutting machine. Grasping the value of the Y-axis deviation between the alignment mark and the plating line 230 having the first non-welding cover defining the alignment mark 232, and taking a position between the two as the X-axis cutting path Amendment to 214A. The term "Y-axis deviation value" refers to the offset of the center of the welding mask defining the alignment mark (ie, the alignment hole 242) in the Y-axis direction, and the alignment mark can be defined by the welding mask (ie, the pair The center of the bit hole 242) is calculated by having the shortest distance of the plating line 230 of the first non-welding cover defining the alignment mark 232 in the same X-axis scribe line. And a suitable position may be taken between the center of the solder mask defining the alignment mark to the shortest distance of the plating line 230 having the first non-welding cover defining the alignment mark 232, for example: one-half or one-third At the same time, as the cutting reference corrected by the X-axis cutting path 214A. As shown in FIG. 7C, when the center of the solder mask defining the alignment mark (ie, the alignment hole 242) is shifted along the Y-axis, the cutting center line of the X-axis cutting path 214A should be along the Y-axis. Correct one-half or two-thirds of the Y-axis deviation value upwards. At the same time, the X-axis deviation value between the alignment mark and the plating line 230 having the second non-welding cover defining the alignment mark 233 is grasped, and one position between the two is taken as the Y-axis. Correction of the cutting track 214B. The term "X-axis deviation value" refers to the offset of the center of the alignment mark in the X-axis direction, and the center of the alignment mark (ie, the alignment hole 242) can be defined by the welding cap to The shortest distance of the plating line 230 defining the alignment mark 233 in the same Y-axis scribe line is calculated by the second non-welding cover. And a suitable position may be taken between the center of the solder mask defining the alignment mark to the shortest distance of the plating line 230 having the second non-welding cover defining the alignment mark 233, for example: one-half or one-third At the same time, the cutting reference is corrected as the Y-axis cutting path 214B. As shown in FIG. 7C, when the center of the solder mask defining the alignment mark (ie, the alignment hole 242) is shifted leftward along the X axis, the cutting center line of the Y-axis cutting path 214B should be along X. The axial left is corrected by one-half or two-thirds of the X-axis deviation value. Preferably, after the above-mentioned correcting action, the offset of the position of the post-cut package structure (ie, the distribution position of the external terminal) can be reduced to +/- 30 micrometers (μm), which is significantly smaller than the deviation of the solder mask layer 240. Move the tolerance.

最後,依據修正後之X軸切割道214A與Y軸切割道214B,切割該基板條本體210,以使每一基板單元213分離成各自獨立之封裝構造。此外,由於修正後之X軸切割道214A與Y軸切割道214B較接近無偏移情況之原始位置設計,在切割該些基板單元213以分離成若干個半導體封裝構造之後,可防止設置於該些外接墊220之外接端子過於靠近切割後半導體封裝構造之邊緣,進而免除外接端子分佈不平均之情況。Finally, the substrate strip body 210 is cut according to the modified X-axis scribe line 214A and the Y-axis dicing street 214B, so that each substrate unit 213 is separated into separate package configurations. In addition, since the modified X-axis scribe line 214A and the Y-axis dicing street 214B are closer to the original position design without the offset, after the substrate units 213 are cut to be separated into a plurality of semiconductor package structures, the arrangement is prevented. The external terminals of the external pads 220 are too close to the edge of the semiconductor package structure after cutting, thereby avoiding the uneven distribution of the terminals.

請參閱第8A與8B圖所示,利用習知基板條構造與本發明之多對位標記之基板條構造分別製成半導體封裝構造之後繪示其外接端子與封裝構造邊緣之截面示意圖。如第8A圖所示,當習知設置一銲罩層140於該基板單元113時發生偏移之情況,該銲罩層140之該些連接孔141無法對準該些外接墊120而形成有一位偏差值D1。並且,該些外接端子20的位置是由該些連接孔141來決定其分佈位置,所以該些外接端子20與該些外接墊120中心之間亦形成有該位偏差值D1。因此,在形成封膠體10並切割成各自獨立之封裝構造之後,該些外接端子20會太靠近封裝構造之邊緣11,因而造成表面接合時種種不良影響。然而,在本發明中,如第8B圖所示,雖然利用相同製程能力,該銲罩層240也可能同樣發生了如上述偏移之情況,即該些連接孔241與該些外接墊220之間形成有一位偏差值D2(D2等於D1),而使該銲罩層240之該些連接孔241偏移而改變了該些外接端子50之分佈位置,但由於本發明藉由該第一非銲罩界定對位標記232與該第二非銲罩界定對位標記233計算出該銲罩界定對位標記之位偏差值(即D2),進而修正為實際切割道,所以在切割後能調整該些外接端子50與封裝構造之邊緣41之間的距離,使得該些外接端子50不會因該銲罩層240之該些連接孔241偏移而太靠近已切割封裝構造之邊緣41,故不會有嚴重的腳位偏移。在一較佳實施例中,切割道修正的距離D3係可為該位偏差值D2的二分之一,或者修正為其它的適當距離,例如:三分之二等等。Referring to FIGS. 8A and 8B, a schematic cross-sectional view of the external terminal and the package structure edge is shown after the semiconductor package structure is formed by using the conventional substrate strip structure and the multi-alignment mark substrate strip structure of the present invention. As shown in FIG. 8A, when a solder mask layer 140 is disposed on the substrate unit 113, the connection holes 141 of the solder mask layer 140 cannot be aligned with the external pads 120 to form a Bit deviation value D1. Moreover, the positions of the external terminals 20 are determined by the connection holes 141. Therefore, the position deviation value D1 is also formed between the external terminals 20 and the centers of the external pads 120. Therefore, after the encapsulant 10 is formed and cut into separate package configurations, the external terminals 20 are too close to the edge 11 of the package structure, thereby causing various adverse effects when the surface is bonded. However, in the present invention, as shown in FIG. 8B, although the same process capability is utilized, the solder mask layer 240 may also be subjected to the above-mentioned offset, that is, the connection holes 241 and the external pads 220. A deviation value D2 is formed between D2 (D2 is equal to D1), and the connection holes 241 of the solder mask layer 240 are offset to change the distribution position of the external terminals 50, but the present invention is The welding cover defining alignment mark 232 and the second non-welding cover defining the alignment mark 233 calculate the position deviation value (ie, D2) of the welding cover defining the alignment mark, and then correct the actual cutting path, so the adjustment can be adjusted after cutting The distance between the external terminals 50 and the edge 41 of the package structure is such that the external terminals 50 are not too close to the edge 41 of the cut package structure due to the offset of the connection holes 241 of the solder mask layer 240. There will be no serious foot offsets. In a preferred embodiment, the trajectory correction distance D3 may be one-half of the position deviation value D2, or may be corrected to other suitable distances, for example, two-thirds, and the like.

以上所述,僅是本發明的較佳實施例而已,並非對本發明作任何形式上的限制,雖然本發明已以較佳實施例揭露如上,然而並非用以限定本發明,任何熟悉本項技術者,在不脫離本發明之技術範圍內,所作的任何簡單修改、等效性變化與修飾,均仍屬於本發明的技術範圍內。The above is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the present invention. Any simple modifications, equivalent changes and modifications made without departing from the technical scope of the present invention are still within the technical scope of the present invention.

10...封膠體10. . . Sealant

11...封裝構造邊緣11. . . Package construction edge

20...外接端子20. . . External terminal

30...晶片30. . . Wafer

40...封膠體40. . . Sealant

41...封裝構造邊緣41. . . Package construction edge

50...外接端子50. . . External terminal

100...基板條構造100. . . Substrate strip construction

110...基板條本體110. . . Substrate strip body

113...基板單元113. . . Substrate unit

120...外接墊120. . . External pad

130...電鍍線130. . . Plating line

132...非銲罩界定對位標記132. . . Non-weld cover defines alignment mark

141...連接孔141. . . Connection hole

142...開孔142. . . Opening

200...多對位標記之基板條構造200. . . Multi-alignment mark substrate strip construction

210...基板條本體210. . . Substrate strip body

211...模封面211. . . Mold cover

212...植球面212. . . Globular surface

213...基板單元213. . . Substrate unit

214...切割道214. . . cutting line

214A...X軸切割道214A. . . X-axis cutting

214B...Y軸切割道214B. . . Y-axis cutting

220...外接墊220. . . External pad

230...電鍍線230. . . Plating line

231...金屬墊231. . . Metal pad

232...第一非銲罩界定對位標記232. . . First non-weld cover defines alignment mark

233...第二非銲罩界定對位標記233. . . Second non-weld cover defines alignment mark

240...銲罩層240. . . Welding mask

241...連接孔241. . . Connection hole

242...對位孔242. . . Alignment hole

243...開孔243. . . Opening

250...電鍍層250. . . Plating

D1、D2...位偏差值D1, D2. . . Bit deviation value

D3...切割道修正距離D3. . . Cutting path correction distance

第1圖:一種習知基板條構造之局部上視示意圖。Figure 1 is a partial top plan view of a conventional substrate strip construction.

第2A至2B圖:習知基板條構造之外接墊在銲罩層無偏移與偏移時之顯露情況之上視示意圖。2A-2B: A schematic view of the outer surface of the conventional substrate strip structure when the solder mask layer is exposed without offset and offset.

第3圖:依據本發明之一具體實施例的一種多對位標記之基板條構造之上視示意圖。Figure 3 is a top plan view of a multi-paragraph substrate strip construction in accordance with an embodiment of the present invention.

第4圖:依據本發明之一具體實施例的多對位標記之基板條構造之局部放大示意圖。Figure 4 is a partially enlarged schematic view showing the construction of a plurality of alignment mark substrate strips in accordance with an embodiment of the present invention.

第5圖:依據本發明之一具體實施例的多對位標記之基板條構造依基板條本體之長邊平行方向剖切基板單元之局部截面示意圖。Fig. 5 is a partial cross-sectional view showing the substrate unit of the multi-alignment mark according to an embodiment of the present invention, which is cut in parallel with the long side of the substrate strip body.

第6圖:依據本發明之一具體實施例的多對位標記之基板條構造沿X軸切割道剖切之局部截面示意圖。Figure 6 is a partial cross-sectional view, taken along the X-axis scribe line, of a multi-paragraph substrate strip structure in accordance with an embodiment of the present invention.

第7A至7C圖:依據本發明之一具體實施例的多對位標記之基板條構造封裝時的切割方法之元件示意圖。7A to 7C are diagrams showing the components of the cutting method in the case of a multi-paragraph-marked substrate strip according to an embodiment of the present invention.

第8A與8B圖:利用習知基板條構造與本發明之多對位標記之基板條構造分別製成半導體封裝構造之後繪示其外接端子與封裝構造邊緣之截面示意圖。8A and 8B are schematic cross-sectional views showing the outer terminal and the package structure edge after the semiconductor package structure is formed by using the conventional substrate strip structure and the multi-alignment mark substrate strip structure of the present invention.

200...多對位標記之基板條構造200. . . Multi-alignment mark substrate strip construction

210...基板條本體210. . . Substrate strip body

213...基板單元213. . . Substrate unit

214...切割道214. . . cutting line

214A...X軸切割道214A. . . X-axis cutting

214B...Y軸切割道214B. . . Y-axis cutting

220...外接墊220. . . External pad

230...電鍍線230. . . Plating line

231...金屬墊231. . . Metal pad

232...第一非銲罩界定對位標記232. . . First non-weld cover defines alignment mark

233...第二非銲罩界定對位標記233. . . Second non-weld cover defines alignment mark

241...連接孔241. . . Connection hole

242...對位孔242. . . Alignment hole

243...開孔243. . . Opening

Claims (10)

一種多對位標記之基板條構造,包含:一基板條本體,係具有一模封面與一植球面,該基板條本體內為複數個一體構成並呈矩陣排列之基板單元與複數個位於該些基板單元之間與周邊的切割道,其中該些切割道係包含至少一X軸切割道與至少一Y軸切割道;複數個外接墊,係設置於該植球面上並位於該些基板單元內;複數個電鍍線,係設置於該植球面上且位於該些切割道內,並於該X軸切割道與該Y軸切割道之交會處形成有一金屬墊,以及於該基板條本體之周邊形成有一第一非銲罩界定對位標記與一第二非銲罩界定對位標記,分別位於該X軸切割道與該Y軸切割道內;以及一銲罩層,係形成於該植球面上,該銲罩層係具有複數個顯露該些外接墊之連接孔、一局部顯露該金屬墊之對位孔以及複數個顯露該第一非銲罩界定對位標記與該第二非銲罩界定對位標記之開孔,其中該些連接孔係小於該些外接墊,以使該些外接墊為銲罩界定型態,並且該金屬墊顯露於該對位孔之部位係形成為一銲罩界定對位標記,其中該第一非銲罩界定對位標記與該第二非銲罩界定對位標記係鄰近於該金屬墊,作為用以計算該銲罩界定對位標記之位偏差值之基準點。A substrate strip structure comprising a plurality of alignment marks, comprising: a substrate strip body having a die cover and a ball-planting surface, wherein the substrate strip body is a plurality of substrate units integrally formed and arranged in a matrix, and the plurality of substrates are located a scribe line between the substrate unit and the periphery, wherein the scribe lines comprise at least one X-axis scribe line and at least one Y-axis dicing track; a plurality of external pads are disposed on the ball-forming surface and located in the substrate units a plurality of electroplating lines are disposed on the ball-facing surface and located in the cutting lanes, and a metal pad is formed at an intersection of the X-axis cutting lane and the Y-axis cutting lane, and around the substrate strip body Forming a first non-welding cover defining alignment mark and a second non-welding cover defining alignment marks respectively located in the X-axis cutting lane and the Y-axis cutting lane; and a solder mask layer formed on the spherical surface The solder mask layer has a plurality of connection holes exposing the external pads, a registration hole partially exposing the metal pads, and a plurality of first non-welding cover defining alignment marks and the second non-welding cover Defining the alignment mark An opening, wherein the connecting holes are smaller than the external pads, so that the external pads are defined as a solder mask, and the portion of the metal pad exposed in the alignment hole is formed as a solder mask defining an alignment mark The first non-weld cover defining alignment mark and the second non-weld cover defining an alignment mark are adjacent to the metal pad as a reference point for calculating a position deviation value of the welding cap defining the registration mark. 根據申請專利範圍第1項之多對位標記之基板條構造,其中該對位孔與該些非銲罩界定對位標記係為十字形。The substrate strip construction according to the multi-paragraph mark of the first aspect of the patent application, wherein the alignment hole and the non-welding cover define the alignment mark as a cross. 根據申請專利範圍第1或2項之多對位標記之基板條構造,其中該銲罩層係覆蓋該些電鍍線在該金屬墊、該第一非銲罩界定對位標記與該第二非銲罩界定對位標記之外之部位。The substrate strip structure of the multi-alignment mark according to claim 1 or 2, wherein the solder mask layer covers the plating lines at the metal pad, the first non-weld cover defines an alignment mark and the second non- The weld cap defines a portion other than the alignment mark. 根據申請專利範圍第1或2項之多對位標記之基板條構造,其中該些外接墊係為周邊排列。The substrate strip structure of the plurality of alignment marks according to the first or second aspect of the patent application, wherein the external pads are arranged in a periphery. 根據申請專利範圍第1或2項之多對位標記之基板條構造,其中該些開孔係為圓形,其孔徑係不小於該銲罩界定對位標記之位偏差值的兩倍。The substrate strip construction according to the multi-paragraph mark of the first or second aspect of the patent application, wherein the openings are circular, and the aperture diameter is not less than twice the value of the position deviation of the alignment mark defined by the solder mask. 一種多對位標記之基板條構造封裝時的切割方法,包含:提供一如申請專利範圍第1項之多對位標記之基板條構造;對該基板條構造進行封裝動作,其係設置複數個晶片於該些基板單元上,並且電性連接該些晶片至該些基板單元,再形成一封膠體於該基板條本體之該模封面;抓取該銲罩界定對位標記與上述具有第一非銲罩界定對位標記之電鍍線之間的Y軸位偏差值,並取其兩者之間之一位置作為X軸切割道之修正;抓取該銲罩界定對位標記與上述具有第二非銲罩界定對位標記之電鍍線之間的X軸位偏差值,並取其兩者之間之一位置作為Y軸切割道之修正;以及依據修正後之X軸切割道與Y軸切割道,切割該基板條本體。A method for cutting a multi-paragraph substrate strip package comprises: providing a substrate strip structure as in the multi-position mark of claim 1; and encapsulating the substrate strip structure, which is provided in plurality Was on the substrate unit, and electrically connecting the wafers to the substrate units, and then forming a gel on the mold cover of the substrate strip body; grasping the solder mask to define the alignment mark and having the first The non-welding cover defines a Y-axis deviation value between the plating lines of the alignment mark, and takes a position between the two as a correction of the X-axis cutting track; grasping the welding cover defines the alignment mark and the above-mentioned The second non-welding cover defines the X-axis deviation value between the plating lines of the alignment mark, and takes a position between the two as a correction of the Y-axis cutting path; and according to the corrected X-axis cutting path and the Y-axis Cutting the track to cut the substrate strip body. 根據申請專利範圍第6項之多對位標記之基板條構造封裝時的切割方法,其中該對位孔與該些非銲罩界定對位標記係為十字形。The method for cutting a package according to the multi-position mark substrate strip of claim 6 of the patent application scope, wherein the alignment hole and the non-welding cover define the alignment mark as a cross shape. 根據申請專利範圍第6或7項之多對位標記之基板條構造封裝時的切割方法,其中該銲罩層係覆蓋該些電鍍線在該金屬墊、該第一非銲罩界定對位標記與該第二非銲罩界定對位標記之外之部位。The method for cutting a package according to the multi-position mark substrate strip of claim 6 or 7, wherein the solder mask layer covers the electroplated lines, and the first non-weld cover defines an alignment mark And the second non-welding cover defines a portion other than the alignment mark. 根據申請專利範圍第6或7項之多對位標記之基板條構造封裝時的切割方法,其中該些外接墊係為周邊排列。The method for cutting a package according to a plurality of alignment mark substrate strips according to the sixth or seventh aspect of the patent application, wherein the external pads are arranged in a periphery. 根據申請專利範圍第6或7項之多對位標記之基板條構造封裝時的切割方法,其中該些開孔係為圓形,其孔徑係不小於該銲罩界定對位標記之位偏差值的兩倍。The method for cutting a package according to the multi-position mark substrate strip of claim 6 or 7, wherein the openings are circular, and the aperture diameter is not less than a deviation value of the alignment mark defined by the solder mask Twice.
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Publication number Priority date Publication date Assignee Title
TWI743792B (en) * 2020-05-19 2021-10-21 力晶積成電子製造股份有限公司 Vernier mark for semiconductor manufacturing process and lithographic process inspection method using the same

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CN104701301B (en) * 2015-03-10 2018-05-01 武汉新芯集成电路制造有限公司 A kind of wafer alignment mark
TWI681223B (en) * 2018-12-28 2020-01-01 奇美實業股份有限公司 Optical film and method for cutting the same
US20230282502A1 (en) * 2022-03-03 2023-09-07 Micron Technology, Inc. Wafer carrier with reticle template for marking reticle fields on a semiconductor wafer

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI743792B (en) * 2020-05-19 2021-10-21 力晶積成電子製造股份有限公司 Vernier mark for semiconductor manufacturing process and lithographic process inspection method using the same

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