TWI425573B - - Google Patents
Info
- Publication number
- TWI425573B TWI425573B TW100100571A TW100100571A TWI425573B TW I425573 B TWI425573 B TW I425573B TW 100100571 A TW100100571 A TW 100100571A TW 100100571 A TW100100571 A TW 100100571A TW I425573 B TWI425573 B TW I425573B
- Authority
- TW
- Taiwan
Links
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010280097.8A CN102403219B (zh) | 2010-09-14 | 2010-09-14 | 一种铜制程等离子刻蚀方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201212124A TW201212124A (en) | 2012-03-16 |
| TWI425573B true TWI425573B (zh) | 2014-02-01 |
Family
ID=45885299
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100100571A TW201212124A (en) | 2010-09-14 | 2011-01-07 | Plasma etching method of copper process |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102403219B (zh) |
| TW (1) | TW201212124A (zh) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW468201B (en) * | 1999-03-12 | 2001-12-11 | Toshiba Corp | Dry etching process |
| TW200739719A (en) * | 2005-12-28 | 2007-10-16 | Tokyo Electron Ltd | Plasma etching method and computer-readable storage medium |
| TW200842971A (en) * | 2007-04-18 | 2008-11-01 | Philtech Inc | Semiconductor device, its manufacturing method, dry etching method, method for manufacturing wiring material and dry etching device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050011859A1 (en) * | 2003-07-15 | 2005-01-20 | Bing Ji | Unsaturated oxygenated fluorocarbons for selective aniostropic etch applications |
| JP4540961B2 (ja) * | 2003-10-10 | 2010-09-08 | Ａｚエレクトロニックマテリアルズ株式会社 | エッチングストッパー層形成用組成物 |
| US20060286792A1 (en) * | 2005-06-20 | 2006-12-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dual damascene process |
| US8043957B2 (en) * | 2006-05-17 | 2011-10-25 | Nec Corporation | Semiconductor device, method for manufacturing semiconductor device and apparatus for manufacturing semiconductor |
-
2010
- 2010-09-14 CN CN201010280097.8A patent/CN102403219B/zh active Active
-
2011
- 2011-01-07 TW TW100100571A patent/TW201212124A/zh unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW468201B (en) * | 1999-03-12 | 2001-12-11 | Toshiba Corp | Dry etching process |
| TW200739719A (en) * | 2005-12-28 | 2007-10-16 | Tokyo Electron Ltd | Plasma etching method and computer-readable storage medium |
| TW200842971A (en) * | 2007-04-18 | 2008-11-01 | Philtech Inc | Semiconductor device, its manufacturing method, dry etching method, method for manufacturing wiring material and dry etching device |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201212124A (en) | 2012-03-16 |
| CN102403219B (zh) | 2015-10-07 |
| CN102403219A (zh) | 2012-04-04 |