TWI423488B - Light emitting diode package structure - Google Patents

Light emitting diode package structure Download PDF

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TWI423488B
TWI423488B TW99122862A TW99122862A TWI423488B TW I423488 B TWI423488 B TW I423488B TW 99122862 A TW99122862 A TW 99122862A TW 99122862 A TW99122862 A TW 99122862A TW I423488 B TWI423488 B TW I423488B
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substrate
package structure
emitting diode
light emitting
reflective layer
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TW99122862A
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TW201203626A (en
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Kuo Tso Chen
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Optromax Electronics Co Ltd
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發光二極體封裝結構Light emitting diode package structure

本發明是有關於一種封裝結構,且特別是有關於一種發光二極體封裝結構。The present invention relates to a package structure, and more particularly to a light emitting diode package structure.

在製作發光二極體封裝結構的過程中,會對晶圓進行切割以得到多個彼此分離的發光二極體單元,然後再將各個發光二極體單元配置於載具上,其中,是藉由黏著膠將發光二極體單元固定於載具。為了使發光二極體單元發出的光線能夠有效地被反射以提升發光效率,須選用具透光性的黏著膠,因此對黏著膠的選擇產生了限制,而無法使用具有較佳散熱性的非透光黏著膠,降低了發光二極體封裝結構的散熱效率。In the process of fabricating the LED package structure, the wafer is cut to obtain a plurality of light-emitting diode units separated from each other, and then the LED units are disposed on the carrier, wherein The light-emitting diode unit is fixed to the carrier by an adhesive. In order to enable the light emitted by the LED unit to be effectively reflected to improve the luminous efficiency, a translucent adhesive must be selected, so that the selection of the adhesive is limited, and the non-heat dissipation is not used. The light-transmitting adhesive reduces the heat dissipation efficiency of the LED package structure.

此外,可在發光二極體單元底面與黏著膠之間配置反射層,使發光二極體單元發出的光線能夠有效地藉由反射層被反射以提升發光效率。此方法雖可讓黏著膠的選擇較有彈性,然而分別在多個發光二極體單元背面配置反射層會增加製程時間與困難度,使製造成本上升。再者,若在製造過程中先將反射層配置於未被切割的晶圓,然後再對晶圓與反射層進行切割,雖可使製造過程較為簡化,卻會因反射層遮蔽晶圓內元件而產生切割準確度下降的問題,或必須預留較大的切割空間,造成多餘無用空間,並增加產品的成本。In addition, a reflective layer may be disposed between the bottom surface of the light-emitting diode unit and the adhesive, so that the light emitted by the light-emitting diode unit can be effectively reflected by the reflective layer to improve luminous efficiency. Although this method can make the selection of the adhesive more flexible, separately arranging the reflective layer on the back surface of the plurality of light-emitting diode units increases the processing time and difficulty, and increases the manufacturing cost. Furthermore, if the reflective layer is first disposed on the uncut wafer during the manufacturing process, and then the wafer and the reflective layer are cut, the manufacturing process can be simplified, but the in-wafer components are shielded by the reflective layer. However, the problem of reduced cutting accuracy may occur, or a large cutting space must be reserved, resulting in unnecessary useless space and increasing the cost of the product.

本發明提供一種發光二極體封裝結構,在製作上較為方便。The invention provides a light emitting diode package structure, which is convenient in production.

本發明提出一種發光二極體封裝結構,包括第一基底、相互獨立的多個發光二極體單元、第二基底、相互獨立的多個驅動電路及多個電性連接件。發光二極體單元共同製作於第一基底上。驅動電路共同製作於第二基底上。每一電性連接件連接發光二極體單元中的一個及其所對應的驅動電路。The invention provides a light emitting diode package structure, which comprises a first substrate, a plurality of light emitting diode units independently of each other, a second substrate, a plurality of driving circuits independent of each other, and a plurality of electrical connecting members. The light emitting diode units are co-made on the first substrate. The driving circuit is fabricated on the second substrate. Each of the electrical connectors is connected to one of the light emitting diode units and a corresponding driving circuit thereof.

在本發明之一實施例中,上述之電性連接件包括多條銲線,發光二極體單元是以打線接合技術透過銲線電性連接到各自對應的驅動電路。In an embodiment of the invention, the electrical connector comprises a plurality of bonding wires, and the LED unit is electrically connected to the corresponding driving circuit through the bonding wire by a wire bonding technique.

在本發明之一實施例中,上述之電性連接件包括多個導電凸塊,發光二極體單元是以覆晶接合技術透過導電凸塊電性連接到各自對應的驅動電路。In an embodiment of the invention, the electrical connector comprises a plurality of conductive bumps, and the LED unit is electrically connected to the corresponding driving circuit through the conductive bumps by a flip chip bonding technique.

在本發明之一實施例中,上述之發光二極體封裝結構更包括一載具,提供承載面,而第一基底以及第二基底設置於承載面之上。In an embodiment of the invention, the LED package structure further includes a carrier that provides a bearing surface, and the first substrate and the second substrate are disposed on the bearing surface.

在本發明之一實施例中,上述之發光二極體封裝結構更包括封裝膠體,配置於承載面上,並且覆蓋第一基底上的發光二極體單元以及第二基底上的驅動電路。In an embodiment of the invention, the LED package further includes an encapsulant disposed on the carrying surface and covering the LED unit on the first substrate and the driving circuit on the second substrate.

在本發明之一實施例中,上述之發光二極體封裝結構更包括反射層,配置於第一基底及載具之間。In an embodiment of the invention, the LED package further includes a reflective layer disposed between the first substrate and the carrier.

在本發明之一實施例中,上述之反射層的材質包括鋁、銀、銅或鋁、鎳、鈦、銀、金、銅、鍚複合材料。In an embodiment of the invention, the material of the reflective layer comprises aluminum, silver, copper or aluminum, nickel, titanium, silver, gold, copper, and ruthenium composite materials.

在本發明之一實施例中,上述之發光二極體封裝結構更包括黏著膠,配置於第一基底及載具之間,或配置於第二基底及載具之間。In an embodiment of the invention, the LED package further includes an adhesive disposed between the first substrate and the carrier or between the second substrate and the carrier.

在本發明之一實施例中,上述之黏著膠的材質包括銀膠或錫。In an embodiment of the invention, the adhesive material comprises silver glue or tin.

在本發明之一實施例中,上述之發光二極體封裝結構更包括控制元件,電性連接於驅動電路,以調變發光二極體單元的發光狀態。In an embodiment of the invention, the LED package structure further includes a control component electrically connected to the driving circuit to modulate the light emitting state of the LED unit.

在本發明之一實施例中,上述之發光二極體封裝結構更包括反射層,配置於各驅動電路之上表面。In an embodiment of the invention, the LED package structure further includes a reflective layer disposed on an upper surface of each of the driving circuits.

在本發明之一實施例中,上述之反射層的材質包括鋁、銀或銅。In an embodiment of the invention, the material of the reflective layer comprises aluminum, silver or copper.

基於上述,本發明的多個發光二極體單元係共同被製作於第一基底上而與第一基底成為一體的結構,且多個驅動電路係共同被製作於第二基底上而與第二基底成為一體的結構,因此在製作過程中不必對第一基底與第二基底進行切割,而可簡化發光二極體結構的製程,降低製造成本。Based on the above, the plurality of light emitting diode units of the present invention are integrally formed on the first substrate and integrated with the first substrate, and the plurality of driving circuits are commonly fabricated on the second substrate and the second The substrate has an integrated structure, so that it is not necessary to cut the first substrate and the second substrate during the manufacturing process, and the manufacturing process of the light-emitting diode structure can be simplified, and the manufacturing cost can be reduced.

為讓本發明之上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。The above described features and advantages of the present invention will be more apparent from the following description.

圖1為本發明一實施例之發光二極體封裝結構的俯視 圖。圖2為圖1之發光二極體封裝結構的局部立體圖。請參考圖1及圖2,本實施例的發光二極體封裝結構100包括第一基底110、相互獨立的多個發光二極體單元120、第二基底130、相互獨立的多個驅動電路140及多個電性連接件150。發光二極體單元120共同製作於第一基底110上而與第一基底110共同形成一體的結構。驅動電路140共同製作於第二基底130上而與第二基底130共同形成一體的結構。每一電性連接件150連接發光二極體單元120中的一個及其所對應的驅動電路140,使這些發光二極體單元120分別連接於這些驅動電路140而適於受驅動電路140驅動而發光。1 is a top view of a light emitting diode package structure according to an embodiment of the invention Figure. 2 is a partial perspective view of the light emitting diode package structure of FIG. 1. Referring to FIG. 1 and FIG. 2 , the LED package structure 100 of the present embodiment includes a first substrate 110 , a plurality of LED units 120 independently of each other, a second substrate 130 , and a plurality of driving circuits 140 that are independent of each other. And a plurality of electrical connectors 150. The LED unit 120 is fabricated on the first substrate 110 to form an integrated structure with the first substrate 110. The driving circuit 140 is formed on the second substrate 130 to form an integrated structure with the second substrate 130. Each of the electrical connectors 150 is connected to one of the LED units 120 and its corresponding driving circuit 140, so that the LED units 120 are respectively connected to the driving circuits 140 and are adapted to be driven by the driving circuit 140. Glowing.

藉此配置方式,在製作發光二極體封裝結構100的過程中不必對第一基底110與第二基底130進行切割,而可簡化發光二極體結構100的製程,降低製造成本。In this way, the first substrate 110 and the second substrate 130 do not need to be cut during the process of fabricating the LED package structure 100, and the manufacturing process of the LED structure 100 can be simplified, and the manufacturing cost can be reduced.

詳細而言,本實施例的電性連接件150例如為銲線,而發光二極體單元120是以打線接合技術透過所述銲線電性連接到各自對應的驅動電路140。發光二極體封裝結構100更包括載具160,載具160提供承載面162,而第一基底110以及第二基底130則設置於承載面162上。本實施例的載具160例如為線路基板,然本發明不以此為限,在其它實施例中,亦可以導線架取代線路基板。此外,在本實施例中,發光二極體封裝結構100更包括控制元件170,控制元件170電性連接於驅動電路140,以調變發光二極體單元120的發光狀態,舉例來說,可藉控制元件170分別控制各個發光二極體單元120發光與否,或調整各發光二極體單元120之發光強弱。In detail, the electrical connector 150 of the embodiment is, for example, a bonding wire, and the LED unit 120 is electrically connected to the corresponding driving circuit 140 through the bonding wire by a wire bonding technique. The light emitting diode package structure 100 further includes a carrier 160. The carrier 160 provides a bearing surface 162, and the first substrate 110 and the second substrate 130 are disposed on the bearing surface 162. The carrier 160 of the present embodiment is, for example, a circuit substrate. However, the present invention is not limited thereto. In other embodiments, the lead frame may be replaced by a lead frame. In addition, in the embodiment, the LED package structure 100 further includes a control component 170 electrically connected to the driving circuit 140 to modulate the illumination state of the LED unit 120. For example, The light-emitting diode unit 120 is controlled to emit light by the control element 170, or the light-emitting intensity of each of the light-emitting diode units 120 is adjusted.

圖3為圖1之發光二極體封裝結構沿方向D的局部側視圖。請參考圖1及圖3,在本實施例中,發光二極體封裝結100構更包括封裝膠體180,封裝膠體180配置於承載面162上,並且覆蓋第一基底110上的發光二極體單元120、第二基底130上的驅動電路140及電性連接件150,以對發光二極體單元120、驅動電路140及電性連接件150進行保護。3 is a partial side elevational view of the light emitting diode package structure of FIG. 1 along direction D. Referring to FIG. 1 and FIG. 3 , in the embodiment, the LED package 100 further includes an encapsulant 180 disposed on the bearing surface 162 and covering the LED on the first substrate 110 . The unit 120 and the driving circuit 140 and the electrical connector 150 on the second substrate 130 protect the LED unit 120, the driving circuit 140 and the electrical connector 150.

請參考圖3,在本實施例中,發光二極體封裝結構100更包括反射層190a與反射層190b,反射層190a配置於第一基底110及載具160之間,而反射層190b配置於驅動電路140的上方表面。藉此,發光二極體單元120所發出的光線可藉由反射層190a與反射層190b進行反射,以提升發光二極體封裝結構100的發光效率。反射層190a與反射層190b的材質例如包括鋁、銀或銅,且例如是以電鍍、蒸鍍、或真空濺鍍的方式被分別配置於第一基底110與驅動電路140的上方表面。然本發明不對反射層190a與反射層190b的材質加以限制,在其它實施例中,其亦可為其它適當之反光材質。Referring to FIG. 3, in the embodiment, the LED package structure 100 further includes a reflective layer 190a and a reflective layer 190b. The reflective layer 190a is disposed between the first substrate 110 and the carrier 160, and the reflective layer 190b is disposed on the reflective layer 190b. The upper surface of the drive circuit 140. Thereby, the light emitted by the LED unit 120 can be reflected by the reflective layer 190a and the reflective layer 190b to improve the luminous efficiency of the LED package structure 100. The material of the reflective layer 190a and the reflective layer 190b includes, for example, aluminum, silver, or copper, and is disposed on the upper surfaces of the first substrate 110 and the driving circuit 140, for example, by plating, vapor deposition, or vacuum sputtering. However, the present invention does not limit the materials of the reflective layer 190a and the reflective layer 190b. In other embodiments, it may be other suitable reflective materials.

由於製作本實施例的發光二極體封裝結構100的過程中不必對第一基底110與第二基底130進行切割,因此反射層190a與反射層190b的配置不會產生因第一基底110或第二基底130內元件被反射層190a或反射層190b遮蔽而影響切割準確性的問題。此外,由於本實施例的第一基底110與第二基底130皆未被切割為多個彼此分離的部分,因此可更為方便地將反射層190a配置於第一基底110,且可更為方便地將反射層190b配置於驅動電路140的上方表面。Since the first substrate 110 and the second substrate 130 do not have to be cut during the process of fabricating the LED package structure 100 of the present embodiment, the configuration of the reflective layer 190a and the reflective layer 190b is not generated by the first substrate 110 or the The elements in the two substrates 130 are shielded by the reflective layer 190a or the reflective layer 190b to affect the cutting accuracy. In addition, since the first substrate 110 and the second substrate 130 of the embodiment are not cut into a plurality of portions separated from each other, the reflective layer 190a can be more conveniently disposed on the first substrate 110, and can be more convenient. The reflective layer 190b is disposed on the upper surface of the driving circuit 140.

本實施例的第一基底110及第二基底130例如是藉由黏著膠50a及黏著膠50b而被固定於載具160上。詳細而言,黏著膠50a膠合於反射層190a及載具160之間,而黏著膠50b膠合於第二基底130及載具160之間。值得注意的是,由於本實施例的發光二極體封裝結構100在黏著膠50a及黏著膠50b上方分別配置反射層190a與反射層190b,發光二極體單元120發出的光線在尚未到達黏著膠50a及黏著膠50b之前就會被反射層190a與反射層190b向上反射,因此黏著膠50a及黏著膠50b的透光性對於發光二極體封裝結構100的發光效率較無影響。藉此,黏著膠50a及黏著膠50b的材質可為具有較佳散熱性的非透光材料,以使發光二極體封裝結構100具有較佳的散熱效率,進而提升發光二極體封裝結構100之光電轉換效率。舉例來說,黏著膠50a與第一基底120之間可配置一層鋁、鎳、鈦、銀、金、銅、鍚複合多層結構(熱傳係數約為透明矽膠的50~1000倍,且適於與銀膠及錫膏膠合),且黏著膠50b與第二基底130之間亦可配置一層鋁、鎳、鈦、銀、金、銅、鍚複合多層結構,以使黏著膠50a及黏著膠50b的材質可選用銀膠(熱傳係數約為透明矽膠的10~50倍)或錫(熱傳係數約為透明矽膠的50~200倍),使第一基底110與載具160之間、第二基底130與載具160之間具有較小的溫差(例如為1℃)。然本發明不以此為限,在其它實施例中,黏著膠50a及黏著膠50b亦可為其它適當之材質。值得注意的是,上述配置於黏著膠50a與第一基底120之間的鋁、鎳、鈦、銀、金、銅、鍚複合多層結構可為所述反射層190a,意即,反射層190a的材質可為鎳、鈦、銀、金、銅、鍚複合材料。The first substrate 110 and the second substrate 130 of the present embodiment are fixed to the carrier 160 by, for example, an adhesive 50a and an adhesive 50b. In detail, the adhesive 50a is glued between the reflective layer 190a and the carrier 160, and the adhesive 50b is glued between the second substrate 130 and the carrier 160. It is to be noted that, since the light-emitting diode package structure 100 of the present embodiment is respectively disposed with the reflective layer 190a and the reflective layer 190b over the adhesive 50a and the adhesive 50b, the light emitted by the light-emitting diode unit 120 has not yet reached the adhesive. The 50a and the adhesive 50b are reflected upward by the reflective layer 190a and the reflective layer 190b. Therefore, the light transmittance of the adhesive 50a and the adhesive 50b has no influence on the luminous efficiency of the LED package 100. Therefore, the material of the adhesive 50a and the adhesive 50b can be a non-transparent material having better heat dissipation, so that the light-emitting diode package structure 100 has better heat dissipation efficiency, thereby improving the light-emitting diode package structure 100. Photoelectric conversion efficiency. For example, a composite layer of aluminum, nickel, titanium, silver, gold, copper, and tantalum may be disposed between the adhesive 50a and the first substrate 120 (the heat transfer coefficient is about 50 to 1000 times that of the transparent silicone, and is suitable for Gluing with silver glue and solder paste), and a layer of aluminum, nickel, titanium, silver, gold, copper and ruthenium may be disposed between the adhesive 50b and the second substrate 130 to make the adhesive 50a and the adhesive 50b. The material can be made of silver glue (heat transfer coefficient is about 10~50 times that of transparent silicone) or tin (heat transfer coefficient is about 50~200 times of transparent silicone), so that the first substrate 110 and the carrier 160 are between There is a small temperature difference between the two substrates 130 and the carrier 160 (for example, 1 ° C). However, the present invention is not limited thereto. In other embodiments, the adhesive 50a and the adhesive 50b may be other suitable materials. It should be noted that the aluminum, nickel, titanium, silver, gold, copper, and tantalum composite multilayer structure disposed between the adhesive 50a and the first substrate 120 may be the reflective layer 190a, that is, the reflective layer 190a. The material can be nickel, titanium, silver, gold, copper or tantalum composite materials.

考慮各材質的附著能力及量產的成熟性,上述配置於黏著膠50a與第一基底120之間的複合多層結構及配置於黏著膠50b與第二基底130之間的複合多層結構,其組成及鍍的順序可為鋁/鈦/鎳/銀、鋁/鈦/鎳/金、銅/鎳/銀、銅/鎳/金、銅/錫、銅/鎳/銀/錫、銅/鎳/金/錫、鋁/鈦/鎳/銀/錫或鋁/鈦/鎳/金/錫。Considering the adhesion capability of each material and the maturity of mass production, the composite multilayer structure disposed between the adhesive 50a and the first substrate 120 and the composite multilayer structure disposed between the adhesive 50b and the second substrate 130 are composed of And the order of plating can be aluminum / titanium / nickel / silver, aluminum / titanium / nickel / gold, copper / nickel / silver, copper / nickel / gold, copper / tin, copper / nickel / silver / tin, copper / nickel / Gold/tin, aluminum/titanium/nickel/silver/tin or aluminum/titanium/nickel/gold/tin.

圖4為本發明另一實施例之發光二極體封裝結構的局部側視圖。請參考圖4,本實施例的發光二極體封裝結構200與圖1至圖3發光二極體封裝結構100之不同處在於,發光二極體單元220是以覆晶接合技術電性連接到各自對應的驅動電路240。詳細而言,在本實施例中,電性連接件250例如為導電凸塊,第二基底230配置於載具260的承載面262上,第一基底210配置於第二基底230上方,而配置於第一基底210的發光二極體單元220透過所述導電凸塊電性連接到配置於第二基底230的驅動電路240。本實施例的載具260例如為線路基板,然本發明不以此為限,在其它實施例中,亦可以導線架取代線路基板。4 is a partial side elevational view of a light emitting diode package structure according to another embodiment of the present invention. Please refer to FIG. 4 , the difference between the LED package structure 200 of the present embodiment and the LED package structure 100 of FIG. 1 to FIG. 3 is that the LED unit 220 is electrically connected to the flip chip bonding technology. Corresponding drive circuits 240 are provided. In detail, in the embodiment, the electrical connector 250 is, for example, a conductive bump, the second substrate 230 is disposed on the bearing surface 262 of the carrier 260, and the first substrate 210 is disposed above the second substrate 230. The LED unit 220 of the first substrate 210 is electrically connected to the driving circuit 240 disposed on the second substrate 230 through the conductive bumps. The carrier 260 of the present embodiment is, for example, a circuit substrate. However, the present invention is not limited thereto. In other embodiments, the lead frame may be replaced by a lead frame.

更詳細而言,在本實施例中,發光二極體封裝結構200更包括反射層290,反射層290配置於驅動電路240的上方表面。藉此,發光二極體單元220所發出的光線可藉由反射層290進行反射,以提升發光二極體封裝結構200的發光效率。反射層290的材質例如包括鋁、銀或銅,且例如是以電鍍的、蒸鍍、或真空濺鍍方式被配置於驅動電路240的上方表面。然本發明不對反射層290的材質加以限制,在其它實施例中,其亦可為其它適當之反光材質。In more detail, in the embodiment, the LED package structure 200 further includes a reflective layer 290 disposed on an upper surface of the driving circuit 240. Thereby, the light emitted by the LED unit 220 can be reflected by the reflective layer 290 to improve the luminous efficiency of the LED package structure 200. The material of the reflective layer 290 includes, for example, aluminum, silver, or copper, and is disposed on the upper surface of the driving circuit 240, for example, by electroplating, vapor deposition, or vacuum sputtering. However, the present invention does not limit the material of the reflective layer 290. In other embodiments, it may be other suitable reflective materials.

由於製作本實施例的發光二極體封裝結構200的過程中不必對第二基底230進行切割,因此反射層290的配置不會產生因第二基底230內元件被反射層290而影響切割準確性的問題,並省去切割所需的額外空間。Since the second substrate 230 does not have to be cut during the process of fabricating the LED package structure 200 of the present embodiment, the configuration of the reflective layer 290 does not cause the cutting accuracy to be affected by the components in the second substrate 230 being reflected by the reflective layer 290. The problem and save the extra space needed for cutting.

本實施例的第二基底230例如是藉由黏著膠60而被固定於載具260上,其中,黏著膠60膠合於反射層290及載具260之間。發光二極體單元220發出的光線在尚未到達黏著膠60之前就會被反射層290向上反射,因此黏著膠60的透光性對於發光二極體封裝結構200的發光效率較無影響。藉此,黏著膠60的材質可為具有較佳散熱性的非透光材料,以使發光二極體封裝結構200具有較佳的散熱效率,進而提升發光二極體封裝結構200之光電轉換效率。舉例來說,黏著膠60與第二基底230之間可配置一層鋁、鎳、鈦、銀、金、銅、鍚複合多層結構(熱傳係數約為透明矽膠的50~1000倍,且適於與銀膠及錫膏膠合),以使黏著膠60的材質可選用銀膠(熱傳係數約為透明矽膠的10~50倍)或錫(熱傳係數約為透明矽膠的50~200倍),而可使第二基底230與載具260之間具有較小的溫差(例如為1℃)。然本發明不以此為限,在其它實施例中,黏著膠60亦可為其它適當之材質。The second substrate 230 of the present embodiment is fixed to the carrier 260 by, for example, an adhesive 60, wherein the adhesive 60 is glued between the reflective layer 290 and the carrier 260. The light emitted by the LED unit 220 is reflected upward by the reflective layer 290 before it reaches the adhesive 60. Therefore, the light transmittance of the adhesive 60 has no influence on the luminous efficiency of the LED package structure 200. Therefore, the material of the adhesive 60 can be a non-transparent material having better heat dissipation, so that the light-emitting diode package structure 200 has better heat dissipation efficiency, thereby improving the photoelectric conversion efficiency of the LED package structure 200. . For example, a composite layer of aluminum, nickel, titanium, silver, gold, copper, and tantalum may be disposed between the adhesive 60 and the second substrate 230 (the heat transfer coefficient is about 50 to 1000 times that of the transparent silicone, and is suitable for Glue with silver glue and solder paste), so that the adhesive glue 60 can be made of silver glue (heat transfer coefficient is about 10~50 times that of transparent silicone) or tin (heat transfer coefficient is about 50~200 times that of transparent silicone) The second substrate 230 and the carrier 260 may have a small temperature difference (for example, 1 ° C). However, the invention is not limited thereto. In other embodiments, the adhesive 60 may be other suitable materials.

考慮各材質的附著能力及量產的成熟性,上述配置於黏著膠60與第二基底230之間的複合多層結構,其組成及鍍的順序可為鋁/鈦/鎳/銀、鋁/鈦/鎳/金、銅/鎳/銀、銅/鎳/金、銅/錫、銅/鎳/銀/錫、銅/鎳/金/錫、鋁/鈦/鎳/銀/錫或鋁/鈦/鎳/金/錫。Considering the adhesion capability of each material and the maturity of mass production, the composite multilayer structure disposed between the adhesive 60 and the second substrate 230 may be composed of aluminum/titanium/nickel/silver, aluminum/titanium. /nickel/gold, copper/nickel/silver, copper/nickel/gold, copper/tin, copper/nickel/silver/tin, copper/nickel/gold/tin, aluminum/titanium/nickel/silver/tin or aluminum/titanium / Nickel / Gold / Tin.

此外,發光二極體封裝結200構更包括封裝膠體280,封裝膠體280配置於承載面162上方而位於第一基底210與第二基底230之間,並且覆蓋第一基底210上的發光二極體單元220、第二基底230上的驅動電路240及電性連接件250,以對發光二極體單元220、驅動電路240及電性連接件250進行保護。In addition, the LED package 200 further includes an encapsulant 280 disposed on the bearing surface 162 between the first substrate 210 and the second substrate 230 and covering the LEDs on the first substrate 210. The body unit 220, the driving circuit 240 on the second substrate 230, and the electrical connector 250 protect the LED unit 220, the driving circuit 240, and the electrical connector 250.

綜上所述,本發明的多個發光二極體單元係共同被製作於第一基底上而與第一基底成為一體的結構,且多個驅動電路係共同被製作於第二基底上而與第二基底成為一體的結構,因此在製作過程中不必對第一基底與第二基底進行切割,而可簡化發光二極體結構的製程,降低製造成本。此外,由於本發明的發光二極體封裝結構的製作過程中不必對第一基底與第二基底進行切割,因此不會產生因第一基底或第二基底內元件被反射層遮蔽而影響切割準確性的問題。另外,由於第一基底與第二基底皆未被切割為多個彼此分離的部分,因此可更為方便地將反射層配置於第一基底與第二基底。In summary, the plurality of light emitting diode units of the present invention are integrally formed on the first substrate and integrated with the first substrate, and the plurality of driving circuits are commonly fabricated on the second substrate. The second substrate has an integrated structure, so that it is not necessary to cut the first substrate and the second substrate during the manufacturing process, and the manufacturing process of the light emitting diode structure can be simplified, and the manufacturing cost can be reduced. In addition, since the first substrate and the second substrate do not have to be cut during the manufacturing process of the LED package structure of the present invention, the components in the first substrate or the second substrate are not shielded by the reflective layer, thereby affecting the cutting accuracy. Sexual problem. In addition, since the first substrate and the second substrate are not cut into a plurality of portions separated from each other, the reflective layer can be more conveniently disposed on the first substrate and the second substrate.

再者,在黏著膠與發光二極體單元之間配置反射層,可使發光二極體單元發出的光線在尚未到達黏著膠之前就被反射層反射,因此黏著膠的透光性對於發光二極體封裝結構的發光效率較無影響。藉此,黏著膠的材質可選用具有較佳散熱性的非透光材料,以提升發光二極體封裝結構具有較佳的散熱效率,進而使發光二極體封裝結構具有較佳的光電轉換效率。Furthermore, a reflective layer is disposed between the adhesive and the light emitting diode unit, so that the light emitted by the light emitting diode unit is reflected by the reflective layer before reaching the adhesive, so that the light transmittance of the adhesive is for the light emitting The luminous efficiency of the polar package structure has no effect. Therefore, the material of the adhesive can be selected from a non-transparent material having better heat dissipation, so as to improve the heat dissipation efficiency of the LED package structure, thereby enabling the LED package structure to have better photoelectric conversion efficiency. .

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,故本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.

50a、50b、60...黏著膠50a, 50b, 60. . . Adhesive

100、200...發光二極體封裝結構100, 200. . . Light emitting diode package structure

110、210...第一基底110, 210. . . First substrate

120、220...發光二極體單元120, 220. . . Light-emitting diode unit

130、230...第二基底130, 230. . . Second substrate

140、240...驅動電路140, 240. . . Drive circuit

150、250...電性連接件150, 250. . . Electrical connector

160、260...載具160, 260. . . vehicle

162、262...承載面162, 262. . . Bearing surface

170...控制元件170. . . control element

180、280...封裝膠體180, 280. . . Encapsulant

190a、190b、290...反射層190a, 190b, 290. . . Reflective layer

圖1為本發明一實施例之發光二極體封裝結構的俯視圖。1 is a top plan view of a light emitting diode package structure according to an embodiment of the invention.

圖2為圖1之發光二極體封裝結構的局部立體圖。2 is a partial perspective view of the light emitting diode package structure of FIG. 1.

圖3為圖1之發光二極體封裝結構沿方向D的局部側視圖。3 is a partial side elevational view of the light emitting diode package structure of FIG. 1 along direction D.

圖4為本發明另一實施例之發光二極體封裝結構的局部側視圖。4 is a partial side elevational view of a light emitting diode package structure according to another embodiment of the present invention.

100...發光二極體封裝結構100. . . Light emitting diode package structure

110...第一基底110. . . First substrate

120...發光二極體單元120. . . Light-emitting diode unit

130...第二基底130. . . Second substrate

140...驅動電路140. . . Drive circuit

150...電性連接件150. . . Electrical connector

160...載具160. . . vehicle

162...承載面162. . . Bearing surface

170...控制元件170. . . control element

180...封裝膠體180. . . Encapsulant

Claims (12)

一種發光二極體封裝結構,包括:一第一基底;相互獨立的多個發光二極體單元,共同製作於該第一基底上;一第二基底;相互獨立的多個驅動電路,共同製作於該第二基底上;以及多個電性連接件,每一電性連接件連接該些發光二極體單元中的一個及其所對應的該驅動電路。A light emitting diode package structure comprising: a first substrate; a plurality of independent light emitting diode units independently fabricated on the first substrate; a second substrate; and a plurality of independent driving circuits On the second substrate; and a plurality of electrical connectors, each of the electrical connectors connecting one of the light emitting diode units and the corresponding driving circuit. 如申請專利範圍第1項所述之發光二極體封裝結構,其中該些電性連接件包括多條銲線,該些發光二極體單元是以打線接合技術透過該些銲線電性連接到各自對應的該些驅動電路。The LED package structure of claim 1, wherein the electrical connectors comprise a plurality of bonding wires, and the LED devices are electrically connected through the bonding wires by wire bonding technology. To each of the corresponding drive circuits. 如申請專利範圍第1項所述之發光二極體封裝結構,其中該些電性連接件包括多個導電凸塊,該些發光二極體單元是以覆晶接合技術透過該些導電凸塊電性連接到各自對應的該些驅動電路。The light emitting diode package structure of claim 1, wherein the electrical connectors comprise a plurality of conductive bumps, and the light emitting diode units are transparent to the conductive bumps by a flip chip bonding technique. Electrically connected to the respective corresponding driving circuits. 如申請專利範圍第1項所述之發光二極體封裝結構,更包括一載具,提供一承載面,而該第一基底以及該第二基底設置於該承載面之上。The light emitting diode package structure of claim 1, further comprising a carrier, wherein a bearing surface is provided, and the first substrate and the second substrate are disposed on the bearing surface. 如申請專利範圍第4項所述之發光二極體封裝結構,更包括一封裝膠體,配置於該承載面上,並且覆蓋該第一基底上的該些發光二極體單元以及該第二基底上的該些驅動電路。 The LED package structure of claim 4, further comprising an encapsulant disposed on the bearing surface and covering the LED unit and the second substrate on the first substrate The drive circuits on the above. 如申請專利範圍第4項所述之發光二極體封裝結構,更包括一反射層,配置於該第一基底及該載具之間。 The light emitting diode package structure of claim 4, further comprising a reflective layer disposed between the first substrate and the carrier. 如申請專利範圍第6項所述之發光二極體封裝結構,其中該反射層的材質包括鋁、銀、銅或鋁、鎳、鈦、銀、金、銅、鍚複合材料。 The light-emitting diode package structure according to claim 6, wherein the material of the reflective layer comprises aluminum, silver, copper or aluminum, nickel, titanium, silver, gold, copper and ruthenium composite materials. 如申請專利範圍第4項所述之發光二極體封裝結構,更包括一黏著膠,配置於該第一基底及該載具之間,或配置於該第二基底及該載具之間。 The illuminating diode package structure of claim 4, further comprising an adhesive disposed between the first substrate and the carrier or between the second substrate and the carrier. 如申請專利範圍第8項所述之發光二極體封裝結構,其中該黏著膠的材質包括銀膠或錫。 The light emitting diode package structure of claim 8, wherein the adhesive material comprises silver glue or tin. 如申請專利範圍第1項所述之發光二極體封裝結構,更包括一控制元件,電性連接於該些驅動電路,以調變該些發光二極體單元的發光狀態。 The illuminating diode package structure of claim 1, further comprising a control component electrically connected to the driving circuits to modulate the illuminating state of the illuminating diode units. 如申請專利範圍第1項所述之發光二極體封裝結構,更包括一反射層,配置於各該驅動電路之上表面。 The light emitting diode package structure of claim 1, further comprising a reflective layer disposed on an upper surface of each of the driving circuits. 如申請專利範圍第11項所述之發光二極體封裝結構,其中該反射層的材質包括鋁、銀或銅。 The light emitting diode package structure according to claim 11, wherein the material of the reflective layer comprises aluminum, silver or copper.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04313283A (en) * 1991-04-11 1992-11-05 Eastman Kodak Japan Kk Mounting method of semiconductor device and ic chip
JP2000168144A (en) * 1998-12-01 2000-06-20 Dainippon Screen Mfg Co Ltd Recording head of image-recording apparatus
JP2007027638A (en) * 2005-07-21 2007-02-01 Fujikura Ltd Light emitting device
TW200802996A (en) * 2006-06-16 2008-01-01 Shinko Electric Ind Co Semiconductor device and method of manufacturing semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04313283A (en) * 1991-04-11 1992-11-05 Eastman Kodak Japan Kk Mounting method of semiconductor device and ic chip
JP2000168144A (en) * 1998-12-01 2000-06-20 Dainippon Screen Mfg Co Ltd Recording head of image-recording apparatus
JP2007027638A (en) * 2005-07-21 2007-02-01 Fujikura Ltd Light emitting device
TW200802996A (en) * 2006-06-16 2008-01-01 Shinko Electric Ind Co Semiconductor device and method of manufacturing semiconductor device

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