TWI420004B - Nano - porous crystalline silicon and its manufacturing method and device thereof - Google Patents

Nano - porous crystalline silicon and its manufacturing method and device thereof Download PDF

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TWI420004B
TWI420004B TW97144864A TW97144864A TWI420004B TW I420004 B TWI420004 B TW I420004B TW 97144864 A TW97144864 A TW 97144864A TW 97144864 A TW97144864 A TW 97144864A TW I420004 B TWI420004 B TW I420004B
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enthalpy
producing
nanoporous
crystallization
metal nanoparticles
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TW201020347A (en
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Jer Liang Andrew Yeh
wen jun Huang
Rong Zong Wang
Wen Ching Hsu
Ssu Hua Ho
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Sino American Silicon Prod Inc
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奈米多孔性結晶矽及其製造方法及其裝置Nanoporous crystalline yttrium and manufacturing method thereof and device thereof

本發明係有關一種奈米多孔性結晶矽及其製造方法及其裝置,旨在提供一種利用氧化還原反應來改變結晶矽之化學性質,再用濕蝕刻方式即可輕易且快速形成具有複數奈米孔洞之奈米多孔性結晶矽。The invention relates to a nanoporous crystalline ruthenium and a preparation method thereof and a device thereof, aiming at providing a oxidative reaction to change the chemical properties of crystallization ruthenium, and then forming a plurality of nanometers easily and rapidly by wet etching. Nano-porous crystalline yttrium of pores.

由於目前人類主要依賴的各種能源來源,如鈾、天然氣與石油等,在未來數十年之內皆會使用殆盡,科學家無不投入大量心力與金錢在開發替代能源的應用上,如太陽能、風力、波力及地熱,且都獲致不錯的成果。但是,風力、波力及地熱的運用皆具有其地域限制性,必須在某些環境才可以使用,如火山區或海岸邊,且其所使用的設備龐大,如風車及深海海水之取水管線。因此,科學家一致看好太陽能的應用並投入大量心力發展相關之轉換裝置,即太陽電池。Because the various energy sources that humans rely on now, such as uranium, natural gas and petroleum, will be used up in the next few decades, scientists will invest a lot of effort and money in the development of alternative energy applications, such as solar energy. Wind, wave and geothermal, and all achieved good results. However, the use of wind, wave and geothermal is geographically restrictive and must be used in certain environments, such as volcanic areas or coastal areas, and the equipment used is large, such as windmills and deep sea water intake lines. Therefore, scientists are optimistic about the application of solar energy and put a lot of effort into the development of related conversion devices, namely solar cells.

目前世界上各個研究單位利用各種材料並利用各種製程來製做太陽電池,而所得到之太陽電池的光電轉換效率並不盡相同;此外,太陽電池之材料可區分為單晶矽、多晶矽、非晶矽;三五族,包括砷化鎵、磷化銦、磷化鎵銦;二六族,包括碲化鎘、硒化銦銅等。而最高的光電轉換效率分別為:單晶矽24.7%、多晶矽19.8%:、非晶矽14.5%、砷化鎵25.7%、硒化銦銅18.8%。一般而言,實驗室階段的太陽電池的光電轉換效率已可達30%以 上,但是市面上所出售之量產階段的太陽能電池,其光電轉換效率一般低於20%,仍有進步的空間。而在成本及光電轉換效率的雙重考量下,目前以結晶矽的應用較多(包括單晶矽及多晶矽),但在一些較低階的應用上,如太陽能計算機或太陽能手錶,則使用光電轉換效率較低但價格較便宜的非晶矽做為太陽電池的材料。At present, various research units in the world use various materials and use various processes to make solar cells, and the photoelectric conversion efficiency of the obtained solar cells is not the same; in addition, the materials of solar cells can be divided into single crystal germanium, polycrystalline germanium, non- Crystal bismuth; three or five families, including gallium arsenide, indium phosphide, gallium indium phosphide; two or six families, including cadmium telluride, indium copper selenide. The highest photoelectric conversion efficiencies are: 24.7% for single crystal germanium, 19.8% for polycrystalline germanium: 14.5% for amorphous germanium, 25.7% for gallium arsenide, and 18.8% for indium selenide. In general, the photoelectric conversion efficiency of solar cells in the laboratory stage has reached 30%. However, the solar cell in the mass production stage sold on the market generally has a photoelectric conversion efficiency of less than 20%, and there is still room for improvement. However, under the double consideration of cost and photoelectric conversion efficiency, there are many applications of crystallization ruthenium (including single crystal germanium and polycrystalline germanium), but in some lower-order applications, such as solar computer or solar watch, photoelectric conversion is used. Amorphous germanium, which is less efficient but less expensive, is used as a material for solar cells.

此外,由於太陽電池的整體價格太高,且矽晶片成本佔太陽電池的總成本一半以上。因此,科學家無不竭盡所能地想提高太陽電池的光電轉換效率並尋求有效降低成本之製程,以提高太陽電池的實用性。目前,科學家提高太陽電池的光電轉換效率的方法是提供光吸收的面積(如利用矽奈米線做為與入射光子反應的材料)或增加入射光子的數量(如設置抗反射層或形成粗糙表面而增加反射率)。但是,矽奈米線的製程繁雜,且需要使用金屬觸媒以促進矽奈米線的生長。這些金屬觸媒不僅額外增加成本,且對於矽奈米線而言,這些金屬觸媒為不純物且會阻礙電子於矽奈米線中的傳輸,影響太陽電池的光電轉換效率。此外,設置抗反射層必須利用複雜之光罩及蝕刻製程將矽晶片的表面蝕刻成三角錐狀,且利用蒸鍍方式於三角錐狀表面塗佈抗反射層。而這些製程都會增加太陽電池的價格且降低其生產良率,不利於大量生產以增加其市場佔有率。In addition, since the overall price of the solar cell is too high, the cost of the germanium wafer accounts for more than half of the total cost of the solar cell. Therefore, scientists are doing everything they can to improve the photoelectric conversion efficiency of solar cells and seek effective cost reduction processes to improve the practicality of solar cells. At present, scientists have improved the photoelectric conversion efficiency of solar cells by providing the area of light absorption (such as using the nanowires as a material to react with incident photons) or increasing the number of incident photons (such as setting an anti-reflective layer or forming a rough surface). And increase the reflectivity). However, the process of the nanowire line is complicated and requires the use of a metal catalyst to promote the growth of the nanowire. These metal catalysts not only add additional cost, but for the nanowires, these metal catalysts are impurities and hinder the transmission of electrons in the nanowires, affecting the photoelectric conversion efficiency of the solar cells. In addition, the antireflection layer must be provided with a complicated mask and an etching process to etch the surface of the germanium wafer into a triangular pyramid shape, and the antireflection layer is coated on the triangular pyramid surface by vapor deposition. These processes will increase the price of solar cells and reduce their production yield, which is not conducive to mass production to increase their market share.

再者,形成粗糙表面可利用濕蝕刻或乾蝕刻方式成型,其中,濕蝕刻製程一般係使用化學藥劑(例如酸性藥 劑),將矽晶片的表面蝕刻成一個個的凹洞,複數個凹洞增加了矽晶片之表面積,進而增加了入射光子的數量;惟,該濕蝕刻製程僅能形成微米級的凹洞,而無法形成奈米級;另外,該乾蝕刻製程亦即使用光罩進行曝光、顯影、蝕刻等方式,於該矽晶片的表面形成一個個的凹洞,雖然可利用光罩之圖形來控制凹洞之大小(例如可形成微米級或奈米級之凹洞),但其製程較為繁雜,且要製作精密度較高之光罩,成本較高。Furthermore, the formation of a rough surface can be formed by wet etching or dry etching, wherein the wet etching process generally uses a chemical agent (for example, an acidic drug). The surface of the germanium wafer is etched into individual pits, and the plurality of pits increase the surface area of the germanium wafer, thereby increasing the number of incident photons; however, the wet etching process can only form micron-sized pits. The nano-scale cannot be formed; in addition, the dry etching process uses a mask to expose, develop, etch, etc., and forms a recess on the surface of the germanium wafer, although the pattern of the mask can be used to control the concave The size of the hole (for example, a micron or nano-scale cavity) can be formed, but the process is complicated, and a high-precision photomask is required, which is costly.

有鑑於此,本發明即在提供一種利用氧化還原反應來改變結晶矽之化學性質,再用濕蝕刻方式即可輕易且快速形成具有複數奈米孔洞之奈米多孔性結晶矽。In view of the above, the present invention provides a nanoporous crystalline ruthenium having a plurality of nanopores which can be easily and rapidly formed by a redox reaction to change the chemical properties of the crystalline ruthenium.

為達上述目的,本發明中奈米多孔性結晶矽之製造方法,係藉由浸泡方式,使結晶矽浸泡於能在結晶矽表面形成複數金屬奈米微粒之酸性氧化劑中,由該金屬奈米微粒與結晶矽先進行氧化還原反應,使該結晶矽表面相對於各金屬微粒附著處,氧化形成SiO2 而容易被酸蝕刻,以形成具有複數奈米孔洞之奈米多孔性結晶矽。In order to achieve the above object, in the method for producing a nanoporous crystalline ruthenium according to the present invention, the crystallization enthalpy is immersed in an acidic oxidizing agent capable of forming a plurality of metal nanoparticles on the surface of the crystallization enthalpy by a soaking method, from the metal nano The fine particles and the crystal ruthenium are first subjected to a redox reaction, and the surface of the crystal ruthenium is adhered to the respective metal fine particles, oxidized to form SiO 2 and easily etched by an acid to form a nanoporous crystalline ruthenium having a plurality of nanopores.

為能使 貴審查委員清楚本發明之主要技術內容,以及實施方式,茲配合圖式說明如下:本發明「奈米多孔性結晶矽及其製造方法及其裝 置」,係將結晶矽浸泡於一酸性氧化劑中,該酸性氧化劑能在結晶矽表面形成複數金屬奈米微粒,該酸性氧化劑係由酸性溶液及化學活性較矽低之金屬化合物混合而成,該酸性氧化劑與該結晶矽形成氧化還原反應,使結晶矽表面還原析出複數金屬奈米微粒,以各金屬奈米微粒為氧化劑,於該結晶矽1表面形成複數奈米孔洞11,如第一圖所示,各奈米孔洞11增加了結晶矽1之表面積,進而增加了入射光子的吸收比例,使該結晶矽應用於太陽電池中,可增加其光電轉換效率。In order to enable the reviewing committee members to understand the main technical contents of the present invention and the embodiments thereof, the following description is given with reference to the following drawings: "Nano porous crystal yttrium and its manufacturing method and its packaging" The crystallization enthalpy is formed by immersing the crystallization oxidant on the surface of the crystallization enthalpy, and the acidic oxidant is formed by mixing an acidic solution and a metal compound having a lower chemical activity. The acidic oxidizing agent forms a redox reaction with the crystallization enthalpy to reduce and precipitate the plurality of metal nanoparticles on the surface of the crystallization enthalpy, and forms a plurality of nano-holes 11 on the surface of the crystallization enthalpy 1 by using the metal nanoparticles as an oxidizing agent, as shown in the first figure. It is shown that each nano hole 11 increases the surface area of the crystal 矽1, thereby increasing the absorption ratio of the incident photons, and the crystallization enthalpy is applied to the solar cell to increase its photoelectric conversion efficiency.

如第二圖所示,本發明之製造方法係包含有下列步驟:步驟A、於溶液槽中配製酸性氧化劑,請同時參閱第二圖之製造裝置,係於溶液槽21中容設有酸性氧化劑22,該酸性氧化劑22係由酸性溶液及化學活性較矽低之金屬化合物混合而成,該酸性溶液係選自硫酸、磷酸、硝酸、氫氟酸、醋酸至少一種或以上的酸任意混合之溶液,或者可以如圖所示之實施例中為硝酸銀221及氫氟酸222之混合;步驟B、將結晶矽浸泡於該溶液槽中,其中,該製造裝置進一步設有夾持件24,且該夾持件24可以為真空吸引方式,請同時參閱第三圖及第四圖所示,以對該結晶矽1進行挾持,將結晶矽1浸泡於該溶液槽21中,如第五圖所示;步驟C、該酸性氧化劑22與該結晶矽1形成氧化還 原反應,使結晶矽1表面還原析出複數金屬奈米微粒,該金屬奈米微粒23可以為銀,各金屬奈米微粒23附著於結晶矽1表面上,如第六圖所示,以各金屬奈米微粒為氧化劑,並於該處進行氧化還原反應,該結晶矽表面1被各金屬奈米微粒23附著處形成氧化還原反應後,則成為SiO2 ;步驟D、進行酸蝕刻,請同時參閱第七圖所示,使該結晶矽1表面相對於各金屬微粒附著處形成複數奈米孔洞11。As shown in the second figure, the manufacturing method of the present invention comprises the following steps: Step A, preparing an acidic oxidizing agent in a solution tank, and referring to the manufacturing apparatus of the second drawing at the same time, the acidic oxidizing agent is contained in the solution tank 21. 22, the acidic oxidant 22 is formed by mixing an acidic solution and a metal compound having a lower chemical activity, and the acidic solution is selected from the group consisting of sulfuric acid, phosphoric acid, nitric acid, hydrofluoric acid, and at least one or more of acetic acid. Or in the embodiment shown in the figure, a mixture of silver nitrate 221 and hydrofluoric acid 222; step B, immersing crystallization enthalpy in the solution tank, wherein the manufacturing device is further provided with a clamping member 24, and the The clamping member 24 can be vacuum suctioned. Please refer to the third and fourth figures at the same time to hold the crystallization enthalpy 1 and immerse the crystallization enthalpy 1 in the solution tank 21, as shown in the fifth figure. Step C, the acidic oxidant 22 forms a redox reaction with the crystal ruthenium 1, and the surface of the crystallization ruthenium 1 is reduced to precipitate a plurality of metal nanoparticles, and the metal nanoparticles 23 may be silver, and the metal nanoparticles 23 are attached to each other. On the surface of the crystallization 矽1, as shown in the sixth figure, each metal nanoparticle is used as an oxidizing agent, and a redox reaction is performed there, and the crystallization surface 1 is formed by the adhesion of each metal nanoparticle 23 to form a redox reaction. Then, SiO 2 is obtained ; in step D, acid etching is performed, and as shown in the seventh figure, a plurality of nano-holes 11 are formed on the surface of the crystal ruthenium 1 with respect to the adhesion of the respective metal particles.

其中,該金屬奈米微粒之含量,可決定結晶矽表面奈米孔洞之密度,當然若金屬奈米微粒之含量越高,則結晶矽表面之奈米孔洞數量較多則密度較高;且該結晶矽浸泡於該溶液槽中之深度,可決定形成奈米孔洞之範圍,例如浸泡於該溶液槽中之深度僅接觸該結晶矽上表面,則僅於該結晶矽之上表面形成奈米孔洞,若將該結晶矽全部浸泡於該溶液槽中,則該結晶矽各個表面均形成有奈米孔洞。Wherein, the content of the metal nanoparticles determines the density of the nanopores on the surface of the crystalline germanium. Of course, if the content of the metal nanoparticles is higher, the number of nanopores on the surface of the crystalline germanium is higher, and the density is higher; The depth at which the crystallization enthalpy is immersed in the solution tank determines the range of formation of the nanopore. For example, the depth of the immersion in the solution tank is only in contact with the upper surface of the crystallization crucible, and only the nanopores are formed on the surface of the crystallization crucible. If the crystallization enthalpy is completely immersed in the solution tank, nanopores are formed on each surface of the crystallization enthalpy.

本發明利用氧化還原反應來改變結晶矽之化學性質,再用濕蝕刻方式即可輕易且快速形成具有複數奈米孔洞之奈米多孔性結晶矽,不僅製程簡便成本較低且加工時間短,且各奈米孔洞增加了結晶矽之表面積,進而增加了入射光子的數量,使該結晶矽應用於太陽電池中,可增加其光電轉換效率。The invention utilizes a redox reaction to change the chemical properties of the crystalline germanium, and then can form a nanoporous crystalline germanium having a plurality of nanopores easily and rapidly by wet etching, which is not only simple in process, low in cost and short in processing time, and Each nanopore increases the surface area of the crystalline germanium, which in turn increases the number of incident photons, allowing the crystalline germanium to be used in solar cells to increase its photoelectric conversion efficiency.

如上所述,本發明提供奈米多孔性結晶矽一種較佳可行之製造方法及其裝置,爰依法提呈發明專利之申請; 惟,以上之實施說明及圖式所示,係本發明較佳實施例者,並非以此侷限本發明,是以,舉凡與本發明之構造、裝置、特徵等近似、雷同者,均應屬本發明之創設目的及申請專利範圍之內。As described above, the present invention provides a preferred and feasible manufacturing method and apparatus for nanoporous crystalline ruthenium, and an application for an invention patent according to law; However, the above description of the embodiments and the drawings, which are preferred embodiments of the present invention, are not intended to limit the present invention, and are intended to be similar to the structures, devices, features, and the like of the present invention. The inventive object of the invention is within the scope of the patent application.

結晶矽‧‧‧1Crystallization ‧‧1

奈米孔洞‧‧‧11Nano Hole ‧‧11

溶液槽‧‧‧21Solution tank ‧‧21.

酸性氧化劑‧‧‧22Acidic oxidizer ‧‧22

硝酸銀‧‧‧221Silver nitrate ‧ ‧ 221

氫氟酸‧‧‧222Hydrofluoric acid ‧‧ 222

金屬奈米微粒‧‧‧23Metal nanoparticle ‧‧‧23

夾持件‧‧‧24Clamping parts ‧‧24

第一圖係為本發明中奈米多孔性結晶矽之結構立體圖。The first figure is a perspective view of the structure of the nanoporous crystalline yttrium in the present invention.

第二圖係為本發明中奈米多孔性結晶矽之製造流程示意圖。The second figure is a schematic diagram of the manufacturing process of the nanoporous crystalline ruthenium in the present invention.

第三圖係為本發明中於溶液槽中製備酸性溶液之結構示意圖。The third figure is a schematic view showing the structure of preparing an acidic solution in a solution tank in the present invention.

第四圖係為本發明中奈米多孔性結晶矽製造裝置之結構示意圖。The fourth figure is a schematic structural view of a nanoporous porous crystal crucible manufacturing apparatus of the present invention.

第五圖係為本發明中將結晶矽浸泡於溶液槽之結構示意圖。The fifth figure is a schematic view showing the structure of immersing crystallization enthalpy in a solution tank in the present invention.

第六圖係為本發明中金屬奈米微粒附著於結晶矽表面進行氧化還原反應之結構示意圖。The sixth figure is a schematic view showing the structure in which the metal nanoparticles are attached to the surface of the crystalline crucible for redox reaction.

第七圖係為本發明中結晶矽表面進行酸蝕刻後之結構示意圖。The seventh figure is a schematic structural view of the surface of the crystallized crucible after acid etching in the present invention.

結晶矽‧‧‧1Crystallization ‧‧1

奈米孔洞‧‧‧11Nano Hole ‧‧11

Claims (7)

一種奈米多孔性結晶矽之製造方法,其包含:配製一酸性氧化劑於一溶液槽中;浸泡一結晶矽於該溶液槽中,其中多個金屬奈米微粒附著於該結晶矽之表面上,並於該結晶矽之表面上進行氧化還原反應;以及以該酸性氧化劑對該結晶矽進行酸蝕刻,使該結晶矽表面相對於該多個金屬奈米微粒附著處形成多個奈米孔洞。 A method for producing a nanoporous crystalline cerium, comprising: preparing an acidic oxidizing agent in a solution tank; immersing a crystallization enthalpy in the solution tank, wherein a plurality of metal nanoparticles are attached to the surface of the crystallization enthalpy, And performing an oxidation-reduction reaction on the surface of the crystallization enthalpy; and etching the crystallization enthalpy with the acidic oxidant to form a plurality of nanopores in the surface of the crystallization enthalpy relative to the plurality of metal nanoparticles. 如請求項1所述之奈米多孔性結晶矽之製造方法,其中,該酸性氧化劑係選自硫酸、磷酸、硝酸、氫氟酸、醋酸至少一種的混合溶液。 The method for producing a nanoporous crystal enthalpy according to claim 1, wherein the acidic oxidizing agent is selected from the group consisting of a mixed solution of at least one of sulfuric acid, phosphoric acid, nitric acid, hydrofluoric acid, and acetic acid. 如請求項1所述之奈米多孔性結晶矽之製造方法,其中,該多個金屬奈米微粒可以為銀。 The method for producing a nanoporous crystal enthalpy according to claim 1, wherein the plurality of metal nanoparticles are silver. 如請求項1所述之奈米多孔性結晶矽之製造方法,其中,該酸性氧化劑可以為硝酸銀及氫氟酸之混合。 The method for producing a nanoporous crystalline crucible according to claim 1, wherein the acidic oxidizing agent is a mixture of silver nitrate and hydrofluoric acid. 如請求項1所述之奈米多孔性結晶矽之製造方法,其中,該多個金屬奈米微粒之含量,可決定該多個結晶矽表面奈米孔洞之密度。 The method for producing a nanoporous crystal enthalpy according to claim 1, wherein the content of the plurality of metal nanoparticles determines the density of the plurality of crystal ruthenium surface nanoholes. 如請求項1所述之奈米多孔性結晶矽之製造方法,其中,該結晶矽之表面被該多個金屬奈米微粒附著處經過氧化還原反應後,則成為SiO2。 The method for producing a nanoporous crystal enthalpy according to claim 1, wherein the surface of the crystallization enthalpy is subjected to a redox reaction after the adhesion of the plurality of metal nanoparticles, and then SiO 2 is obtained. 如請求項1所述之奈米多孔性結晶矽之製造方法,其中,該結晶矽浸泡於該溶液槽中之深度,可決定形成該多個奈米孔洞之範圍。The method for producing a nanoporous crystal enthalpy according to claim 1, wherein a depth of the crystallization enthalpy in the solution tank determines a range in which the plurality of nanopores are formed.
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TWI285924B (en) * 2004-09-06 2007-08-21 Sumco Corp Method for manufacturing silicon wafer

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2653085A (en) * 1952-08-09 1953-09-22 Westinghouse Electric Corp Etching solution and process
US6174746B1 (en) * 1997-12-12 2001-01-16 Robert Bosch Gmbh Method of producing optical waveguides
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