TWI415275B - Thin film photovoltaic device and manufacturing process thereof - Google Patents

Abstract

A thin film photovoltaic device comprises: a substrate, a first electrode layer, a second electrode layer, a photoelectric conversion layer, and a plurality of metallic nanoparticles, wherein the photoelectric conversion layer is disposed between the first electrode layer and the second electrode layer and is able to absorb electromagnetic wave to generate electron-hole pairs and conduct electrons to the first electrode layer and holes to the second electrode layer. Moreover, the metallic nanoparticles can be distributed over the contact interface between the first electrode layer and the photoelectric conversion layer or can be distributed inside the first electrode layer. The manufacturing process of the thin film photovoltaic device is also provided in the present invention.

Description

Thin film photovoltaic device and manufacturing method thereof

The invention relates to a thin film photovoltaic device and a manufacturing method thereof, in particular to a germanium thin film photovoltaic device having a plurality of metal nano particle structures and a manufacturing method thereof. The invention utilizes plasma treatment to form a plurality of metal nano particles on the surface of the transparent conductive film, and the metal nanoparticles absorb the incident light to generate a surface plasma resonance effect, which can effectively increase the performance of the thin film photovoltaic device. Moreover, the thin film photovoltaic device manufactured by the manufacturing method of the present invention can avoid the contamination problem of the deposition chamber caused by the use of the plasma treatment front electrode in the plasma assisted chemical vapor deposition process.

In recent years, the global warming caused by global warming has become the most important issue in the world. It is an inevitable trend to develop clean energy. Among them, solar energy is the focus of renewable energy technology development. Because photovoltaic devices use the principle of photoelectric effect to generate electricity, since carbon dioxide is not produced during power generation, it will greatly contribute to the mitigation of the global warming effect. However, semiconductors, liquid crystal displays and the solar photovoltaic industry all require the use of a large amount of crystalline germanium raw materials, resulting in a serious shortage of supply of crystalline germanium, and the shortage of crystalline germanium seriously affects the development of crystalline germanium photovoltaic devices. Therefore, an amorphous germanium thin film photovoltaic device with a thickness of only a few micrometers has become a star of the mass production of the photovoltaic industry. On the other hand, how to improve the efficiency of photovoltaic components without increasing the cost of the overall component process has become one of the most important research and development directions for thin-film photovoltaic devices.

In order to increase the efficiency of photovoltaic devices, many techniques for processing electrodes have been developed. A commonly used technique is to form an electrode structure having roughness on the surface of the front electrode to generate a trapping effect, reducing reflection of light to increase the short-circuit current of the photovoltaic device. In addition, the use of Surface Plasmon Resonance to enhance the absorption capacity of photovoltaic devices for incident light is also one of the hot research directions.

In order to make a photovoltaic device have a structure that produces a surface plasma resonance effect, such as D. Derkacs, SH Lim, P. Matheu, W. Mar, a and ET Yub, "Improved performance of amorphous silicon solar cells via scattering from surface Plasmon polaritons in The photovoltaic device structure disclosed in "Appl. Phys. Lett., 89, 093103 (2006), the structure of the photovoltaic device 10 shown in FIG. 1 includes: a first electrode layer 11 An n-type semiconductor layer 12, an intrinsic semiconductor layer 13, a p-type semiconductor layer 14, and a second electrode layer 15, wherein the second electrode layer 15 further comprises a plurality of metal nanoparticles 151. Hv in the figure represents incident electromagnetic radiation. The photovoltaic device 10 is in the process of plasma-assisted chemical vapor deposition, and the transparent conductive film of the second electrode layer 15 is treated by plasma to reduce the metal component contained in the transparent conductive film of the second electrode layer 15. A surface plasma resonance structure having metal nanoparticles 151 is formed. However, the manufacturing method used in this technique is liable to cause contamination problems of the cavity of the deposition apparatus and increase the instability of the overall mass production. On the other hand, the photovoltaic device 10 uses the second electrode layer 15 as a front electrode, and the metal nanoparticle 151 contained therein has the effect of absorbing and shielding short-wavelength light, and thus is incident on the short-wavelength of the photoelectric conversion layer of the photovoltaic device. The amount of photons will decrease.

In summary, there is a need for a thin film photovoltaic device and a method of fabricating the same to solve the problems of the prior art.

The main object of the present invention is to provide a structure of a thin film photovoltaic device and a method for fabricating the same, and more particularly to a germanium thin film photovoltaic device having a plurality of metal nanoparticle structures and a method of fabricating the same. The application of the structure can effectively increase the photocurrent characteristics of the germanium thin film photovoltaic device, and the manufacturing method of the present invention can avoid the contamination problem of the deposition chamber caused by the use of the plasma processing electrode in the plasma assisted chemical vapor deposition process.

This technology has the following characteristics:

1. Increase the photocurrent characteristics of thin film photovoltaic devices without increasing process cost.

2. The manufacturing method of the present invention produces a thin film photovoltaic device in which a transparent conductive film of a back electrode is treated by plasma in a physical vapor deposition process, and a metal component contained in the transparent conductive film is partially reduced to form a metal nanoparticle. The surface plasma resonance structure of the particles.

3. Since the process is to treat the transparent conductive electrode by plasma in the physical vapor deposition process, compared with the method of processing the transparent conductive electrode in the plasma-assisted chemical vapor deposition process, the contamination of the deposition device chamber is not considered.

4. The photovoltaic device of the present invention is a photovoltaic device that uses a back electrode to form a surface plasma resonance structure, and a short wavelength segment in the incident electromagnetic radiation is not compared with a photovoltaic device that uses a front electrode to form a surface plasma resonance structure. The metal nanoparticles contained therein are absorbed or shielded.

In order to enable the reviewing committee to have a further understanding and understanding of the features, objects and functions of the present invention, the related detailed structure of the device of the present invention and the concept of the design are explained below so that the reviewing committee can understand the present invention. The detailed description is as follows: Please refer to FIG. 2A, which is a schematic cross-sectional view showing the photoelectric conversion of the first embodiment of the thin film photovoltaic device of the present invention under light irradiation. As shown in FIG. 2A, the thin film photovoltaic device 20 of the first embodiment includes a substrate 21, a first electrode layer 22, a plurality of metal nanoparticles 221, a photoelectric conversion layer 23, and a second electrode layer 24. The plurality of metal nanoparticles 221 are distributed at the contact interface between the first electrode layer 22 and the photoelectric conversion layer 23 . In the first embodiment, the second electrode layer 24 is used as the front electrode, and the first electrode layer 22 is used as the back electrode, and the photoelectric conversion layer 23 is formed on the first electrode layer 22 and the second electrode layer 24. Between when the incident electromagnetic radiation enters the photoelectric conversion layer 23 from the second electrode layer 24, the photoelectric conversion layer 23 absorbs electromagnetic radiation to generate an electron hole pair while conducting electrons to the first electrode layer 22, and The hole is conducted to the second electrode layer 24.

2B is a manufacturing flow diagram of the first embodiment of the thin film photovoltaic device of the present invention, which comprises the following steps: Step 251: providing a substrate; Step 252 further comprises the following steps: Step 2521: Physical vapor deposition (PVD) depositing a first electrode layer on the substrate; Step 2522: forming a plurality of metal nanoparticles on the surface of the first electrode layer by plasma treatment; Step 2523: cutting the first electrode layer by laser cutting a pattern; step 253: depositing a photoelectric conversion layer on the first electrode layer by chemical vapor deposition (CVD); step 254: laser cutting the photoelectric conversion layer to form a pattern; step 255: physical vapor deposition (PVD) Depositing a second electrode layer on the photoelectric conversion layer; and step 256: cutting the second electrode layer to form a pattern by laser.

In the first embodiment, the photoelectric conversion layer 23 may be a pn junction formed by an n-type semiconductor layer 231 and a p-type semiconductor layer 233. Preferably, the photoelectric conversion layer 23 further includes an intrinsic semiconductor layer. 232 is formed between the n-type semiconductor layer 231 and the p-type semiconductor layer 233, thereby increasing the thickness of the light absorbing layer of the photovoltaic device. The manufacturing method of the photoelectric conversion layer has been described in the prior art, and will not be described herein.

Please refer to FIG. 2C, which is a schematic cross-sectional structural view of the second embodiment of the thin film photovoltaic device of the present invention undergoing photoelectric conversion under light irradiation. As shown in FIG. 2C, the thin film photovoltaic device 20' of the second embodiment includes: a substrate 21, a metal layer 211, a first electrode layer 22, a plurality of metal nanoparticles 221, a photoelectric conversion layer 23, and a The second electrode layer 24, wherein a plurality of metal nanoparticles 221 are distributed at a contact interface between the first electrode layer 22 and the photoelectric conversion layer 23. In the second embodiment, the second electrode layer 24 is used as the front electrode, and the first electrode layer 22 is used as the back electrode, and the photoelectric conversion layer 23 is formed on the first electrode layer 22 and the second electrode layer 24. Between when the incident electromagnetic radiation enters the photoelectric conversion layer 23 from the second electrode layer 24, the photoelectric conversion layer 23 absorbs electromagnetic radiation to generate an electron hole pair while conducting electrons to the first electrode layer 22, and The hole is conducted to the second electrode layer 24.

2D is a manufacturing flow diagram of a second embodiment of the thin film photovoltaic device of the present invention, which comprises the following steps: Step 251: providing a substrate; Step 252' further comprises the following steps: Step 252a: Physical gas phase Depositing (PVD) depositing a metal layer on the substrate; step 252b: depositing a first electrode layer on the metal layer by physical vapor deposition (PVD); step 252c: treating the first electrode layer with plasma Forming a plurality of metal nanoparticles on the surface; step 252d: cutting the first electrode layer and the metal layer by laser to form a pattern; and step 253: depositing a photoelectric conversion layer on the first electrode layer by chemical vapor deposition (CVD) Step 254: laser cutting the photoelectric conversion layer to form a pattern; step 255: depositing a second electrode layer on the photoelectric conversion layer by physical vapor deposition (PVD); step 256: cutting the second electrode by laser The layers form a pattern.

In the second embodiment, the photoelectric conversion layer 23 may be a pn junction formed by an n-type semiconductor layer 231 and a p-type semiconductor layer 233. Preferably, the photoelectric conversion layer 23 further includes an intrinsic semiconductor layer. 232 is formed between the n-type semiconductor layer 231 and the p-type semiconductor layer 233, thereby increasing the thickness of the light absorbing layer of the photovoltaic device. The manufacturing method of the photoelectric conversion layer has been described in the prior art, and will not be described herein.

Please refer to FIG. 3A, which is a cross-sectional structural diagram of a third embodiment of the thin film photovoltaic device of the present invention for photoelectric conversion under light irradiation. As shown in FIG. 3A, the thin film photovoltaic device 30 of the third embodiment includes a substrate 31, a first electrode layer 32, a plurality of metal nanoparticles 321 , a photoelectric conversion layer 33, and a second electrode layer 34. The plurality of metal nanoparticles 321 are distributed in the first electrode layer 32. In the third embodiment, the second electrode layer 34 is used as the front electrode, and the first electrode layer 32 is used as the back electrode, and the photoelectric conversion layer 33 is formed on the first electrode layer 32 and the second electrode layer 34. Between when the incident electromagnetic radiation enters the photoelectric conversion layer 33 from the second electrode layer 34, the photoelectric conversion layer 33 absorbs electromagnetic radiation to generate an electron hole pair while conducting electrons to the first electrode layer 32, and The hole is conducted to the second electrode layer 34.

3B is a manufacturing flow diagram of a third embodiment of the thin film photovoltaic device of the present invention, which comprises the following steps: Step 351: providing a substrate; Step 352 further comprises the following steps: Step 3521: Physical vapor deposition (PVD) depositing a first electrode layer on the substrate; step 3522: forming a plurality of metal nanoparticles on the surface of the first electrode layer by plasma treatment; step 3523: redepositing by physical vapor deposition (PVD) The first electrode layer distributes the plurality of metal nanoparticles in the first electrode layer; step 3524: laser cutting the first electrode layer to form a pattern; and step 353: chemical vapor deposition (CVD) a photoelectric conversion layer is deposited on the first electrode layer; step 354: laser cutting the photoelectric conversion layer to form a pattern; step 355: depositing a second electrode layer on the photoelectric conversion layer by physical vapor deposition (PVD); Step 356: Cutting the second electrode layer to form a pattern by laser.

In the third embodiment, the photoelectric conversion layer 33 may be a pn junction formed by an n-type semiconductor layer 331 and a p-type semiconductor layer 333. Preferably, the photoelectric conversion layer 33 further includes an intrinsic semiconductor layer. 332 is formed between the n-type semiconductor layer 331 and the p-type semiconductor layer 333, thereby increasing the thickness of the light absorbing layer of the photovoltaic device. The manufacturing method of the photoelectric conversion layer has been described in the prior art, and will not be described herein.

Please refer to FIG. 3C, which is a cross-sectional structural diagram of the fourth embodiment of the thin film photovoltaic device of the present invention for photoelectric conversion under light irradiation. As shown in FIG. 3C, the thin film photovoltaic device 30' of the fourth embodiment includes: a substrate 31, a metal layer 311, a first electrode layer 32, a plurality of metal nanoparticles 321 , a photoelectric conversion layer 33, and a The second electrode layer 34, wherein a plurality of metal nanoparticles 321 are distributed in the first electrode layer 32. In the fourth embodiment, the second electrode layer 34 is used as the front electrode, and the first electrode layer 32 is used as the back electrode, and the photoelectric conversion layer 33 is formed on the first electrode layer 32 and the second electrode layer 34. Between when the incident electromagnetic radiation enters the photoelectric conversion layer 33 from the second electrode layer 34, the photoelectric conversion layer 33 absorbs electromagnetic radiation to generate an electron hole pair while conducting electrons to the first electrode layer 32, and The hole is conducted to the second electrode layer 34.

3D is a manufacturing flow diagram of a fourth embodiment of the thin film photovoltaic device of the present invention, which comprises the following steps: Step 351: providing a substrate; Step 352' further comprises the following steps: Step 352a: Physical gas phase Depositing (PVD) depositing a metal layer on the substrate; step 352b: depositing a first electrode layer on the metal layer by physical vapor deposition (PVD); step 352c: treating the first electrode layer with plasma Forming a plurality of metal nanoparticles on the surface; step 352d: redepositing the first electrode layer by physical vapor deposition (PVD) to distribute the plurality of metal nanoparticles in the first electrode layer; step 352e: Cutting and cutting the first electrode layer and the metal layer to form a pattern; Step 353: depositing a photoelectric conversion layer on the first electrode layer by chemical vapor deposition (CVD); Step 354: cutting the photoelectric conversion layer into a pattern by laser cutting Step 355: depositing a second electrode layer on the photoelectric conversion layer by physical vapor deposition (PVD); and step 356: cutting the second electrode layer by laser to form a pattern.

In the fourth embodiment, the photoelectric conversion layer 33 may be a pn junction formed by an n-type semiconductor layer 331 and a p-type semiconductor layer 333. Preferably, the photoelectric conversion layer 33 further includes an intrinsic semiconductor layer. 332 is formed between the n-type semiconductor layer 331 and the p-type semiconductor layer 333, thereby increasing the thickness of the light absorbing layer of the photovoltaic device. The manufacturing method of the photoelectric conversion layer has been described in the prior art, and will not be described herein.

Please refer to FIG. 4A, which is a cross-sectional structural diagram of a fifth embodiment of the thin film photovoltaic device of the present invention for photoelectric conversion under light irradiation. As shown in FIG. 4A, the thin film photovoltaic device 40 of the fifth embodiment includes a substrate 41, a first electrode layer 42, a photoelectric conversion layer 43, a second electrode layer 44, and a plurality of metal nanoparticles 441. The plurality of metal nanoparticles 441 are distributed in the second electrode layer 44. In the fifth embodiment, the first electrode layer 42 is used as the front electrode, and the second electrode layer 44 is used as the back electrode, and the photoelectric conversion layer 43 is formed on the first electrode layer 42 and the second electrode layer 44. Between when the incident electromagnetic radiation enters the photoelectric conversion layer 43 from the first electrode layer 42, the photoelectric conversion layer 43 absorbs electromagnetic radiation to generate an electron hole pair, while conducting electrons to the second electrode layer 44, and The hole is conducted to the first electrode layer 42.

4B is a manufacturing flow diagram of a fifth embodiment of the thin film photovoltaic device of the present invention, comprising the steps of: step 451: providing a substrate; and step 452: depositing on the substrate by physical vapor deposition (PVD). a first electrode layer; step 453: laser cutting the first electrode layer to form a pattern; step 454: depositing a photoelectric conversion layer on the first electrode layer by chemical vapor deposition (CVD); step 455: The step of cutting the photoelectric conversion layer to form a pattern; the step 456 further comprises the steps of: step 4561: depositing a second electrode layer on the photoelectric conversion layer by physical vapor deposition (PVD); step 4562: treating the plasma layer Forming a plurality of metal nanoparticles on the surface of the second electrode layer; step 4563: redepositing the second electrode layer by physical vapor deposition (PVD), dispersing the plurality of metal nanoparticles in the second electrode layer; Step 4564: cutting the second electrode layer to form a pattern by laser.

In the fifth embodiment, the photoelectric conversion layer 43 may be a pn junction formed by a p-type semiconductor layer 431 and an n-type semiconductor layer 433. Preferably, the photoelectric conversion layer 43 further includes an intrinsic semiconductor layer. 432 is formed between the p-type semiconductor layer 431 and the n-type semiconductor layer 433 to increase the thickness of the light absorbing layer of the photovoltaic device. The manufacturing method of the photoelectric conversion layer has been described in the prior art, and will not be described herein.

Please refer to FIG. 4C, which is a cross-sectional structural diagram of the sixth embodiment of the thin film photovoltaic device of the present invention for photoelectric conversion under light irradiation. As shown in FIG. 4C, the thin film photovoltaic device 40' of the sixth embodiment includes a substrate 41, a first electrode layer 42, a photoelectric conversion layer 43, a second electrode layer 44, and a plurality of metal nanoparticles 441. And a metal layer 45 in which a plurality of metal nanoparticles 441 are distributed in the second electrode layer 44. In the sixth embodiment, the first electrode layer 42 is used as the front electrode, and the second electrode layer 44 is used as the back electrode, and the photoelectric conversion layer 43 is formed on the first electrode layer 42 and the second electrode layer 44. Between when the incident electromagnetic radiation enters the photoelectric conversion layer 43 from the first electrode layer 42, the photoelectric conversion layer 43 absorbs electromagnetic radiation to generate an electron hole pair, while conducting electrons to the second electrode layer 44, and The hole is conducted to the first electrode layer 42.

4D is a manufacturing flow diagram of a sixth embodiment of the thin film photovoltaic device of the present invention, comprising the steps of: step 451: providing a substrate; and step 452: depositing on the substrate by physical vapor deposition (PVD). a first electrode layer; step 453: laser cutting the first electrode layer to form a pattern; step 454: depositing a photoelectric conversion layer on the first electrode layer by chemical vapor deposition (CVD); step 455: The step of cutting the photoelectric conversion layer to form a pattern; the step 456' further comprises the following steps: Step 4561: depositing a second electrode layer on the photoelectric conversion layer by physical vapor deposition (PVD); step 4562: treating with plasma Forming a plurality of metal nanoparticles on the surface of the second electrode layer; Step 4563: redepositing the second electrode layer by physical vapor deposition (PVD), dispersing the plurality of metal nanoparticles in the second electrode layer Step 4564a: depositing a metal layer on the second electrode layer by physical vapor deposition (PVD); step 4564b: cutting the second electrode layer and the metal layer by laser to form a pattern.

In the sixth embodiment, the photoelectric conversion layer 43 may be a pn junction formed by a p-type semiconductor layer 431 and an n-type semiconductor layer 433. Preferably, the photoelectric conversion layer 43 further includes an intrinsic semiconductor layer. 432 is formed between the p-type semiconductor layer 431 and the n-type semiconductor layer 433 to increase the thickness of the light absorbing layer of the photovoltaic device. The manufacturing method of the photoelectric conversion layer has been described in the prior art, and will not be described herein.

The substrate used in the above first to fourth embodiments may be a temperature resistant material such as glass or a flexible substrate such as stainless steel, and the substrate used in the fifth and sixth embodiments is glass.

The first electrode and the second electrode used in the above first to sixth embodiments are transparent conductive oxides (TCO) such as ZnO. When the transparent conductive oxide layer is treated with a plasma (for example, hydrogen plasma), the metal component contained in the transparent conductive oxide layer is partially reduced at its surface to form metal nanoparticles, and the transparent conductive oxide is made. The layer has a surface plasma resonance structure, and if the transparent conductive oxide layer is ZnO, the metal nanoparticles are Zn nanoparticles.

The metal layer used in the above second, fourth, and sixth embodiments is used to improve the resistance value of the back electrode.

In the photoelectric conversion layer of the first to sixth embodiments, the p-type semiconductor layer, the n-type semiconductor layer and the intrinsic semiconductor layer may be made of germanium, and the germanium material may be amorphous germanium, nanocrystalline germanium or micro. a crystal germanium, a polycrystalline germanium or a mixed phase as described above, and preferably, the thickness of the p-type germanium semiconductor layer is between 1 nm and 100 nm, and the thickness of the intrinsic germanium semiconductor layer is between 200 nm and 4000 nm. Between the meters, the thickness of the n-type germanium semiconductor layer is between 1 nm and 100 nm.

While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application.

10. . . Thin film photovoltaic device

11. . . First electrode layer

12. . . N-type semiconductor layer

13. . . Intrinsic semiconductor layer

14. . . P-type semiconductor layer

15. . . Second electrode layer

151. . . Metal nanoparticle

20. . . Thin film photovoltaic device

20’. . . Thin film photovoltaic device

twenty one. . . Substrate

211. . . Metal layer

twenty two. . . First electrode layer

221. . . Metal nanoparticle

twenty three. . . Photoelectric conversion layer

231. . . N-type semiconductor layer

232. . . Intrinsic semiconductor layer

233. . . P-type semiconductor layer

twenty four. . . Second electrode layer

251, 252, 252', 2521, 2522, 2523, 252a, 252b, 252c, 252d, 253, 254, 255, 256. . . Manufacturing step

30. . . Thin film photovoltaic device

30’. . . Thin film photovoltaic device

31. . . Substrate

311. . . Metal layer

32. . . First electrode layer

321. . . Metal nanoparticle

33. . . Photoelectric conversion layer

331. . . N-type semiconductor layer

332. . . Intrinsic semiconductor layer

333. . . P-type semiconductor layer

34. . . Second electrode layer

351, 352, 352', 3521, 3522, 3523, 3524, 352a, 352b, 352c, 352d, 352e, 353, 354, 355, 356. . . Manufacturing step

40. . . Thin film photovoltaic device

40’. . . Thin film photovoltaic device

41. . . Substrate

42. . . First electrode layer

43. . . Photoelectric conversion layer

431. . . P-type semiconductor layer

432. . . Intrinsic semiconductor layer

433. . . N-type semiconductor layer

44. . . Second electrode layer

441. . . Metal nanoparticle

45. . . Metal layer

451, 452, 453, 454, 455, 456, 456', 4561, 4562, 4563, 4564, 4564a, 4564b. . . Manufacturing step

1 is a schematic cross-sectional view of a prior art thin film photovoltaic device;

2A is a schematic cross-sectional structural view of a first embodiment of the thin film photovoltaic device of the present invention;

2B is a manufacturing flow chart of the first embodiment of the thin film photovoltaic device of the present invention;

2C is a schematic cross-sectional structural view of a second embodiment of the thin film photovoltaic device of the present invention;

2D is a manufacturing flow chart of the second embodiment of the thin film photovoltaic device of the present invention;

3A is a schematic cross-sectional structural view of a third embodiment of the thin film photovoltaic device of the present invention;

3B is a manufacturing flow chart of the third embodiment of the thin film photovoltaic device of the present invention;

3C is a schematic cross-sectional structural view of a fourth embodiment of the thin film photovoltaic device of the present invention;

3D is a manufacturing flow chart of the fourth embodiment of the thin film photovoltaic device of the present invention;

4A is a schematic cross-sectional structural view of a fifth embodiment of the thin film photovoltaic device of the present invention;

4B is a manufacturing flow chart of the fifth embodiment of the thin film photovoltaic device of the present invention;

4C is a schematic cross-sectional structural view of a sixth embodiment of the thin film photovoltaic device of the present invention;

Figure 4D is a manufacturing flow diagram of a sixth embodiment of the thin film photovoltaic device of the present invention.

20‧‧‧Thin-film photovoltaic installation

21‧‧‧Substrate

22‧‧‧First electrode layer

221‧‧‧Metal Nanoparticles

23‧‧‧Photoelectric conversion layer

231‧‧‧n type semiconductor layer

232‧‧‧Intrinsic semiconductor layer

233‧‧‧p-type semiconductor layer

24‧‧‧Second electrode layer

Claims (23)

A thin film photovoltaic device comprising: a substrate; a first electrode layer; a second electrode layer; a photoelectric conversion layer disposed between the first electrode layer and the second electrode layer, and absorbing electromagnetic waves Generating an electron hole pair while conducting electrons to the first electrode layer and conducting the holes to the second electrode layer; and a plurality of metal nanoparticles distributed over the first electrode layer and the photoelectric conversion The contact interface of the layer. The thin film photovoltaic device of claim 1, wherein the first electrode layer and the second electrode layer are transparent conductive oxides, and the composition of the first electrode layer comprises the metal nanoparticles. Metal composition. The thin film photovoltaic device of claim 2, further comprising a metal layer formed between the first electrode layer and the substrate. The thin film photovoltaic device of claim 2, wherein the photoelectric conversion layer further comprises a p-type semiconductor layer and an n-type semiconductor layer. The thin film photovoltaic device of claim 4, wherein the photoelectric conversion layer further comprises an intrinsic semiconductor layer formed between the p-type semiconductor layer and the n-type semiconductor layer. The thin film photovoltaic device according to claim 5, wherein the p-type semiconductor layer, the intrinsic semiconductor layer, and the n-type semiconductor layer are semiconductor layers containing germanium. A thin film photovoltaic device comprising: a substrate; a first electrode layer; a second electrode layer; a photoelectric conversion layer disposed between the first electrode layer and the second electrode layer, and absorbing electromagnetic waves Generating an electron hole pair while conducting electrons to the first electrode layer and conducting the holes to the second electrode layer; and a plurality of metal nanoparticles distributed in the first electrode layer. The thin film photovoltaic device of claim 7, wherein the first electrode layer and the second electrode layer are transparent conductive oxides, and the composition of the first electrode layer comprises the metal nanoparticles. Metal composition. The thin film photovoltaic device of claim 8, further comprising a metal layer formed between the first electrode layer and the substrate. The thin film photovoltaic device of claim 8, wherein the photoelectric conversion layer further comprises a p-type semiconductor layer and an n-type semiconductor layer. The thin film photovoltaic device of claim 10, wherein the photoelectric conversion layer further comprises an intrinsic semiconductor layer formed between the p-type semiconductor layer and the n-type semiconductor layer. The thin film photovoltaic device according to claim 11, wherein the p-type semiconductor layer, the intrinsic semiconductor layer, and the n-type semiconductor layer are semiconductor layers containing germanium. A thin film photovoltaic device comprising: a substrate; a first electrode layer is a front electrode; a second electrode layer is a back electrode; and a photoelectric conversion layer is disposed between the first electrode layer and the second electrode layer, wherein The photoelectric conversion layer further includes a p-type semiconductor layer and an n-type semiconductor layer. When incident electromagnetic radiation enters the photoelectric conversion layer from the first electrode layer, the photoelectric conversion layer can absorb electromagnetic waves to generate an electron hole pair, and Electrons are conducted to the second electrode layer to conduct holes to the first electrode layer; and a plurality of metal nanoparticles are distributed in the second electrode layer. The thin film photovoltaic device of claim 13, wherein the first electrode layer and the second electrode layer are transparent conductive oxides, and the composition of the second electrode layer comprises the metal nanoparticles. Metal composition. The thin film photovoltaic device of claim 14, further comprising a metal layer formed on the second electrode layer. The thin film photovoltaic device of claim 13, wherein the photoelectric conversion layer further comprises an intrinsic semiconductor layer formed between the p-type semiconductor layer and the n-type semiconductor layer. The thin film photovoltaic device according to claim 16, wherein the p-type semiconductor layer, the intrinsic semiconductor layer, and the n-type semiconductor layer are semiconductor layers containing germanium. A method of manufacturing a thin film photovoltaic device, comprising the steps of: providing a substrate; step 2: depositing a first electrode layer on the substrate by physical vapor deposition; and step 3: treating the electrode with the plasma a plurality of surfaces of an electrode layer are formed Metal nanoparticle; step 4: laser cutting the first electrode layer to form a pattern; step 5: depositing a photoelectric conversion layer on the first electrode layer by chemical vapor deposition; step 6: laser cutting the photoelectric The conversion layer forms a pattern; Step 7: depositing a second electrode layer on the photoelectric conversion layer by physical vapor deposition; Step 8: laser cutting the second electrode layer to form a pattern. A method of fabricating a thin film photovoltaic device, comprising the steps of: providing a substrate; step 2: depositing a metal layer on the substrate by physical vapor deposition; and step 3: depositing the metal layer on the metal layer by physical vapor deposition Depositing a first electrode layer thereon; Step 4: forming a plurality of metal nanoparticles on the surface of the first electrode layer by plasma treatment; Step 5: cutting the first electrode layer and the metal layer by laser to form a pattern; 6: depositing a photoelectric conversion layer on the first electrode layer by chemical vapor deposition; step 7: cutting the photoelectric conversion layer by laser to form a pattern; and step 8: depositing a physical vapor deposition layer on the photoelectric conversion layer Second electrode layer; Step 9: laser cutting the second electrode layer to form a pattern. A method of fabricating a thin film photovoltaic device, comprising the steps of: providing a substrate; step 2: depositing a first electrode on the substrate by physical vapor deposition a layer; step 3: forming a plurality of metal nanoparticles on the surface of the first electrode layer by plasma treatment; Step 4: redepositing the first electrode layer by physical vapor deposition to distribute the plurality of metal nanoparticles In the first electrode layer; step 5: laser cutting the first electrode layer to form a pattern; step 6: depositing a photoelectric conversion layer on the first electrode layer by chemical vapor deposition; step 7: using a laser Cutting the photoelectric conversion layer to form a pattern; Step 8: depositing a second electrode layer on the photoelectric conversion layer by physical vapor deposition; Step 9: cutting the second electrode layer to form a pattern by laser. A method of fabricating a thin film photovoltaic device, comprising the steps of: providing a substrate; step 2: depositing a metal layer on the substrate by physical vapor deposition; and step 3: depositing the metal layer on the metal layer by physical vapor deposition Depositing a first electrode layer thereon; Step 4: forming a plurality of metal nanoparticles on the surface of the first electrode layer by plasma treatment; Step 5: depositing the first electrode layer by physical vapor deposition to make the plurality Metal nanoparticles are distributed in the first electrode layer; Step 6: laser cutting the first electrode layer and the metal layer to form a pattern; Step 7: depositing a photoelectric layer on the first electrode layer by chemical vapor deposition Converting layer; Step 8: cutting the photoelectric conversion layer by laser to form a pattern; Step 9: depositing a second electrode layer on the photoelectric conversion layer by physical vapor deposition; Step 10: cutting the second electrode layer by laser to form a pattern. A method for fabricating a thin film photovoltaic device, comprising the steps of: providing a substrate; step 2: depositing a first electrode layer on the substrate by physical vapor deposition; and step 3: cutting the first electrode by laser The electrode layer forms a pattern. Step 4: depositing a photoelectric conversion layer on the first electrode layer by chemical vapor deposition; step 5: cutting the photoelectric conversion layer by laser to form a pattern; and step 6: depositing on the photoelectric conversion layer by physical vapor deposition a second electrode layer; step 7: forming a plurality of metal nanoparticles on the surface of the second electrode layer by plasma treatment; Step 8: redepositing the second electrode layer by physical vapor deposition to make the plurality of metals Nanoparticles are distributed in the second electrode layer; Step 9: laser cutting the second electrode layer to form a pattern. A method for fabricating a thin film photovoltaic device, comprising the steps of: providing a substrate; step 2: depositing a first electrode layer on the substrate by physical vapor deposition; and step 3: cutting the first electrode by laser The electrode layer forms a pattern. Step 4: depositing a photoelectric conversion layer on the first electrode layer by chemical vapor deposition; step 5: cutting the photoelectric conversion layer by laser to form a pattern; and step 6: depositing on the photoelectric conversion layer by physical vapor deposition One second Electrode layer; Step 7: forming a plurality of metal nanoparticles on the surface of the second electrode layer by plasma treatment; Step 8: redepositing the second electrode layer by physical vapor deposition to make the plurality of metal nanoparticles Distributing in the second electrode layer; Step 9: depositing a metal layer on the second electrode by physical vapor deposition; Step 10: cutting the second electrode layer and the metal layer by laser to form a pattern.