TWI409360B - A coating device - Google Patents

A coating device Download PDF

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TWI409360B
TWI409360B TW97134076A TW97134076A TWI409360B TW I409360 B TWI409360 B TW I409360B TW 97134076 A TW97134076 A TW 97134076A TW 97134076 A TW97134076 A TW 97134076A TW I409360 B TWI409360 B TW I409360B
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film
vibration
precursor solution
receiving portion
atomization
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TW97134076A
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Chinese (zh)
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TW201011122A (en
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Shao Kai Pei
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Hon Hai Prec Ind Co Ltd
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Abstract

A coating device includes an atomization apparatus and a deposition apparatus. The atomization apparatus is adapted for atomizing precursor solution. The deposition apparatus is configured for spraying the atomized precursor solution to a surface of a substrate to form a film. The atomization apparatus includes a vessel, a vibration-transmitting film and a vibrating element. The vibration-transmitting film divides the vessel into a first space and a second space. The first space is filled with vibration-transmitting liquid. The second space is used for filling precursor solution. The vibrating element is arranged in the first space and is adapted for producing vibration. The vibration can be transmitted to the precursor solution by the vibration-transmitting liquid and the vibration-transmitting film, and atomize the precursor solution.

Description

一種薄膜製備裝置Film preparation device

本發明涉及一種薄膜製備裝置,尤其涉及一種可節省前驅體溶液並延長霧化發生器使用壽命之薄膜製備裝置。The invention relates to a film preparation device, in particular to a film preparation device which can save a precursor solution and prolong the service life of the atomization generator.

半導體薄膜於電子器件、太陽能電池、功能材料、光電化學製氫等領域具有廣泛之應用。目前常用之半導體薄膜材料之製備方法有化學氣相沈積法(Chemical Vapor Deposition,CVD)、磁控濺射法、溶膠凝膠法及噴霧熱分解法等,溶膠凝膠法為受歡迎製備方法之一,其具有生長溫度低、沈積面積大、生長速度快、工藝易於控制等優點。噴霧熱分解法為近年來逐漸發展起來之化合物半導體薄膜製備方法,該方法相較於溶膠凝膠法具有良好之取向性及外延性,且成本低、無需多次鍍膜。常見之噴霧熱分解技術係將待鍍膜之前驅體溶液霧化,再用載氣將霧化之待鍍膜前驅體溶液攜帶至加熱之基板表面形成薄膜。常用前驅體溶液霧化方式有高速離心霧化、壓力式霧化、氣流式霧化以及超聲波霧化等。Semiconductor thin films have a wide range of applications in electronic devices, solar cells, functional materials, and photoelectrochemical hydrogen production. At present, the commonly used semiconductor thin film materials are prepared by chemical vapor deposition (CVD), magnetron sputtering, sol-gel method and spray pyrolysis, and the sol-gel method is a popular preparation method. First, it has the advantages of low growth temperature, large deposition area, fast growth rate, and easy process control. The spray pyrolysis method is a method for preparing a compound semiconductor film which has been gradually developed in recent years. This method has good orientation and epitaxy compared with the sol-gel method, and has low cost and does not require multiple coatings. A common spray pyrolysis technique atomizes the precursor solution before coating, and then carries the atomized precursor solution to be coated onto the surface of the heated substrate to form a film. Commonly used precursor solution atomization methods include high-speed centrifugal atomization, pressure atomization, airflow atomization, and ultrasonic atomization.

傳統之超聲波霧化裝置包括容器、位於容器內之霧化發生器(通常為壓電振動片)以及安裝於霧化發生器上之液位控制器。容器內填充有前驅體溶液,工作時,由於電子高頻震盪,霧化發生器高頻諧振從而將前驅體溶液分子結構打散而產生霧滴。採用該霧化裝置,當加入容器中之 前驅體溶液液位過低,霧化發生器會因高頻振動發熱且得不到及時冷卻而遭到損壞。為保護霧化發生器,於其上安裝液位控制器,容器中之液位必須超過液位控制器之高度,霧化裝置才能工作。然而,由於霧化發生器與待霧化之前驅體溶液直接接觸,前驅體溶液可能腐蝕霧化發生器從而縮短霧化發生器之使用壽命。A conventional ultrasonic atomizing device includes a container, an atomizing generator (usually a piezoelectric vibrating piece) located inside the container, and a liquid level controller mounted on the atomizing generator. The container is filled with a precursor solution. During operation, due to the high frequency oscillation of the electron, the atomization generator resonates at a high frequency to break up the molecular structure of the precursor solution to generate a droplet. Using the atomizing device when added to the container If the precursor solution level is too low, the atomizer will be damaged by high frequency vibration and will not be cooled in time. In order to protect the atomization generator, a liquid level controller is installed thereon, and the liquid level in the container must exceed the height of the liquid level controller, and the atomization device can work. However, since the atomization generator is in direct contact with the precursor solution to be atomized, the precursor solution may corrode the atomization generator to shorten the life of the atomization generator.

有鑑於此,提供一種可節省前驅體溶液並延長霧化發生器使用壽命之薄膜製備裝置實為必要。In view of this, it is necessary to provide a film preparation apparatus which can save a precursor solution and prolong the life of the atomizer.

一種薄膜製備裝置包括霧化裝置以及薄膜沈積裝置。該霧化裝置用於霧化前驅體溶液。該薄膜沈積裝置用於將霧化之前驅體溶液噴至基板表面以形成薄膜。該霧化裝置包括容器、振動傳遞膜以及振動元件。該振動傳遞膜將容器分隔成第一收容部及第二收容部。該第一收容部填充有振動傳遞液體。該第二收容部用於填充前驅體溶液。該振動元件位於第一收容部,用於產生振動,並使振動藉由該振動傳遞液體、振動傳遞膜傳遞至前驅體溶液,從而使前驅體溶液霧化。A film preparation apparatus includes an atomization device and a thin film deposition device. The atomizing device is used to atomize the precursor solution. The thin film deposition apparatus is for spraying a precursor solution before atomization onto a surface of a substrate to form a thin film. The atomizing device includes a container, a vibration transmitting film, and a vibration element. The vibration transmission film divides the container into a first housing portion and a second housing portion. The first housing portion is filled with a vibration transmitting liquid. The second receiving portion is used to fill the precursor solution. The vibrating element is located at the first receiving portion for generating vibration, and the vibration is transmitted to the precursor solution by the vibration transmitting liquid and the vibration transmitting film, thereby atomizing the precursor solution.

相較於先前技術,上述薄膜製備裝置之霧化裝置具有如下優點:第一,藉由振動傳遞液體、振動傳遞膜對前驅體溶液傳遞振動以將前驅體溶液霧化,無需前驅體溶液與振動元件直接接觸從而延長振動元件之使用壽命;第二,薄膜製備裝置並不限制容置於霧化裝置內之前驅體溶液之 體積,只需加入少量前驅體溶液即可發生霧化並於基板表面鍍膜。Compared with the prior art, the atomization device of the above film preparation device has the following advantages: First, the vibration transfer liquid and the vibration transmission film transmit vibration to the precursor solution to atomize the precursor solution without the precursor solution and vibration. The component is in direct contact to prolong the service life of the vibrating component; secondly, the film preparation device does not limit the capacity of the precursor solution contained in the atomization device. The volume can be atomized and coated on the surface of the substrate by adding a small amount of the precursor solution.

下面將結合附圖對本發明實施例作進一步詳細說明。The embodiments of the present invention will be further described in detail below with reference to the accompanying drawings.

請參閱圖1,為本實施例提供之一種薄膜製備裝置100,其用於將前驅體溶液霧化以於基板表面鍍膜。薄膜製備裝置100包括霧化裝置10以及薄膜沈積裝置20。Please refer to FIG. 1 , which is a thin film preparation apparatus 100 for atomizing a precursor solution to coat a surface of a substrate. The film preparation apparatus 100 includes an atomization device 10 and a thin film deposition device 20.

霧化裝置10用於將前驅體溶液霧化,請參閱圖1,霧化裝置10包括容器11、振動傳遞膜12以及振動元件13。The atomizing device 10 is used to atomize the precursor solution. Referring to FIG. 1, the atomizing device 10 includes a container 11, a vibration transmitting film 12, and a vibrating member 13.

振動傳遞膜12將容器11分隔成第一收容部14及第二收容部15。第一收容部14充有振動傳遞液體16。振動傳遞液體16可傳播振動,例如超聲波,本技術方案中,為避免振動元件13被腐蝕,振動傳遞液體16可為甲醇、乙醇、丙酮等液態有機物或水。The vibration transmission film 12 divides the container 11 into a first housing portion 14 and a second housing portion 15. The first housing portion 14 is filled with the vibration transmitting liquid 16. The vibration transmitting liquid 16 can propagate vibration, such as ultrasonic waves. In the present technical solution, in order to prevent the vibration element 13 from being corroded, the vibration transmitting liquid 16 may be liquid organic matter such as methanol, ethanol, acetone or water.

第二收容部15用於填充前驅體溶液。第二收容部15包括遠離第一收容部14之頂端15a以及靠近振動傳遞膜12之底端15b,頂端15a之尺寸小於底端15b之尺寸。第二收容部15靠近底端15b處具有進氣口17以及進液口18。進氣口17用於往第二收容部15內充入載氣,用於將霧化之前驅體溶液攜帶至基板表面,載氣可為氮氣或氬氣等惰性氣體。進液口18用於往第二收容部15內加入前驅體溶液,以補充霧化後減少之前驅體溶液。優選地,進液口18與填充於第二收容部15之前驅體溶液之液面間之距離為3cm至 8cm。The second housing portion 15 is for filling the precursor solution. The second receiving portion 15 includes a top end 15a away from the first receiving portion 14 and a bottom end 15b adjacent to the vibration transmitting film 12, and the top end 15a is smaller in size than the bottom end 15b. The second housing portion 15 has an air inlet 17 and a liquid inlet 18 near the bottom end 15b. The air inlet 17 is configured to fill the second housing portion 15 with a carrier gas for carrying the atomized solution solution to the surface of the substrate. The carrier gas may be an inert gas such as nitrogen or argon. The inlet port 18 is for adding a precursor solution to the second receiving portion 15 to supplement the precursor solution after the atomization. Preferably, the distance between the liquid inlet 18 and the liquid surface of the body solution before filling the second receiving portion 15 is 3 cm to 8cm.

振動元件13位於第一收容部14,用於產生振動,並使振動依次通過該振動傳遞液體16、振動傳遞膜12傳遞至填充於第二收容部15之前驅體溶液,從而使前驅體溶液霧化。振動傳遞膜12為可傳遞振動之膜層,本實施例中,振動傳遞膜12為聚乙烯膜。振動元件13可為壓電振動片,其產生之振動可為超聲波。The vibrating element 13 is located in the first accommodating portion 14 for generating vibration, and the vibration is sequentially transmitted through the vibration transmitting liquid 16 and the vibration transmitting film 12 to the body solution filled in the second accommodating portion 15, thereby causing the precursor solution to be fogged. Chemical. The vibration transmission film 12 is a film layer that can transmit vibration. In the present embodiment, the vibration transmission film 12 is a polyethylene film. The vibrating member 13 may be a piezoelectric vibrating piece, and the vibration generated may be ultrasonic waves.

優選地,當容器11之第二收容部15由透明材質製成時,霧化裝置10可包括一與第二收容部15相對之紅外檢測裝置,用於檢測前驅體溶液霧化後液滴之直徑大小。Preferably, when the second receiving portion 15 of the container 11 is made of a transparent material, the atomizing device 10 may include an infrared detecting device opposite to the second receiving portion 15 for detecting the droplets of the precursor solution after being atomized. Diameter size.

可理解,霧化裝置10藉由振動傳遞膜12將振動傳遞液體16密封於第一收容部14內,故本技術方案提供之霧化裝置10之第一收容部14無需設置液位控制器,只需於第一收容部14充入足量之振動傳遞液體16即可保證振動元件13不會因發熱而損壞。It can be understood that the atomizing device 10 seals the vibration transmitting liquid 16 in the first accommodating portion 14 by the vibration transmitting film 12, so that the first accommodating portion 14 of the atomizing device 10 provided by the technical solution does not need to be provided with a liquid level controller. It is only necessary to charge the first accommodating portion 14 with a sufficient amount of the vibration transmitting liquid 16 to ensure that the vibrating member 13 is not damaged by heat.

薄膜沈積裝置20包括導管21、加熱台22及噴頭23。加熱台22用於承載並加熱基板。噴頭23與加熱台22相對,用於對加熱之基板表面噴出霧化之前驅體溶液。噴頭23包括相對之連接端24及噴出端25,連接端24連接於導管21,噴出端25之尺寸大於連接端24之尺寸。優選地,為避免氣霧進入大氣中對環境造成污染,加熱台22及噴頭23可設置於一密閉之沈積室內,該沈積室可收集並處理廢氣。導管21用於連接霧化裝置10與噴頭23,以將經霧化裝置10霧化後之前驅體溶液傳輸至噴頭23。具體地,導管21 與霧化裝置10之第二收容部15相連通。The thin film deposition apparatus 20 includes a duct 21, a heating stage 22, and a shower head 23. The heating stage 22 is used to carry and heat the substrate. The showerhead 23 is opposed to the heating stage 22 for ejecting the atomized precursor solution onto the heated substrate surface. The spray head 23 includes an opposite connection end 24 and a discharge end 25, and the connection end 24 is connected to the conduit 21, and the discharge end 25 is sized larger than the connection end 24. Preferably, in order to prevent the aerosol from entering the atmosphere and polluting the environment, the heating station 22 and the spray head 23 may be disposed in a sealed deposition chamber, which collects and treats the exhaust gas. The conduit 21 is used to connect the atomizing device 10 and the spray head 23 to transfer the precursor solution to the spray head 23 after atomization by the atomizing device 10. Specifically, the catheter 21 It is in communication with the second housing portion 15 of the atomizing device 10.

請參閱圖2,下面以超聲波噴霧熱分解法於基板200表面鍍釕薄膜為例說明該薄膜製備裝置100之使用方法,可包括以下步驟:第一步,製備前驅體溶液300並加入第二收容部15中。配置0.001mol/L之三(戊烷-2,4-二酮基)釕之甲醇溶液100ml,將該前驅體溶液300自進液口18加入至第二收容部15內,具體地,該前驅體溶液300承載於振動傳遞膜12,同時與第二收容部15之底端15b之內壁相接觸。Referring to FIG. 2 , the method for using the film preparation apparatus 100 on the surface of the substrate 200 by ultrasonic spray pyrolysis is exemplified below. The method may include the following steps: First, preparing the precursor solution 300 and adding the second container. In section 15. 100 ml of a methanol solution of 0.001 mol/L of tris(pentane-2,4-dione) hydrazine is disposed, and the precursor solution 300 is added from the liquid inlet 18 to the second housing portion 15, specifically, the precursor The body solution 300 is carried on the vibration transmission film 12 while being in contact with the inner wall of the bottom end 15b of the second housing portion 15.

第二步,提供基板200,將其放置於加熱台22。對加熱台22通電以加熱基板200。基板200可為玻璃、矽晶片或陶瓷。本實施例中,將基板200加熱至300℃。In the second step, the substrate 200 is provided and placed on the heating stage 22. The heating stage 22 is energized to heat the substrate 200. The substrate 200 can be glass, tantalum wafer or ceramic. In this embodiment, the substrate 200 is heated to 300 °C.

第三步,對前驅體溶液300進行霧化。具體地,振動元件13產生超聲波,並使超聲波藉由該振動傳遞液體16、振動傳遞膜12傳遞至前驅體溶液300,從而使前驅體溶液300霧化。In the third step, the precursor solution 300 is atomized. Specifically, the vibrating element 13 generates ultrasonic waves, and the ultrasonic waves are transmitted to the precursor solution 300 by the vibration transmitting liquid 16 and the vibration transmitting film 12, thereby atomizing the precursor solution 300.

第四步,往第二收容部15內充入載氣,以將霧化之前驅體溶液攜帶至加熱之基板200表面以形成薄膜。In the fourth step, the second accommodating portion 15 is filled with a carrier gas to carry the atomized precursor solution to the surface of the heated substrate 200 to form a film.

自進氣口17往第二收容部15內充入載氣。本實施例中,進氣口17位於前驅體溶液300之液面以上5cm。載氣與霧化之前驅體溶液300形成氣霧,由於第二收容部15之頂端15a之尺寸小於底端15b之尺寸,因此,氣霧到達頂端15a流速增大。流速較大之氣霧依次經過導管21,並由噴頭23噴出,由於噴頭23之噴出端 5之尺寸大於連接端 24之尺寸,氣霧到達噴出端25時流速減小,以便氣霧噴出穩定。維持噴霧狀態30-60分鐘,即可於基板200之表面得到亮黑色之釕薄膜。將所得之釕薄膜進行高溫退火可得氧化釕薄膜,請參閱圖3,為本技術方案實施例所得氧化釕薄膜之SEM照片。The carrier gas is filled into the second housing portion 15 from the air inlet port 17. In the present embodiment, the air inlet 17 is located 5 cm above the liquid level of the precursor solution 300. The carrier gas and the atomization solution 300 form an aerosol before the atomization. Since the size of the tip end 15a of the second housing portion 15 is smaller than the size of the bottom end 15b, the flow rate of the gas mist reaching the tip end 15a is increased. The gas mist having a larger flow rate passes through the conduit 21 in sequence, and is ejected by the nozzle 23, since the size of the ejection end 5 of the nozzle 23 is larger than the connection end. At the size of 24, the flow rate is reduced when the aerosol reaches the ejection end 25, so that the aerosol ejection is stable. A bright black ruthenium film can be obtained on the surface of the substrate 200 by maintaining the spray state for 30-60 minutes. The obtained ruthenium film is subjected to high temperature annealing to obtain a ruthenium oxide film. Referring to FIG. 3, an SEM photograph of the ruthenium oxide film obtained in the embodiment of the present invention is shown.

相較於先前技術,上述薄膜製備裝置100之霧化裝置10具有如下優點:第一,藉由振動傳遞液體16、振動傳遞膜12對前驅體溶液300傳遞振動以將前驅體溶液300霧化,無需前驅體溶液300與振動元件13直接接觸從而延長了振動元件13之使用壽命;第二,薄膜製備裝置100並不限制容置於霧化裝置10內之前驅體溶液300之體積,只需加入少量前驅體溶液300即可發生霧化並於基板表面鍍膜。Compared with the prior art, the atomizing device 10 of the above-mentioned film preparing apparatus 100 has the following advantages: first, by transmitting the vibration to the precursor solution 300 by the vibration transmitting liquid 16, the vibration transmitting film 12 to atomize the precursor solution 300, The precursor solution 300 is not required to be in direct contact with the vibrating member 13 to prolong the service life of the vibrating member 13. Second, the thin film preparation device 100 does not limit the volume of the precursor solution 300 contained in the atomizing device 10, and only needs to be added. A small amount of the precursor solution 300 can be atomized and coated on the surface of the substrate.

綜上所述,本發明確已符合發明專利之要件,遂依法提出專利申請。惟,以上所述者僅為本發明之較佳實施方式,自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝之人士援依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.

薄膜製備裝置‧‧‧100Film preparation equipment ‧‧100

霧化裝置‧‧‧10Atomizing device ‧‧10

薄膜沈積裝置‧‧‧20Thin film deposition equipment ‧‧20

容器‧‧‧11Container ‧‧11

振動傳遞膜‧‧‧12Vibration transfer film ‧‧12

振動元件‧‧‧13Vibration element ‧‧‧13

第一收容部‧‧‧14First Containment Department ‧‧14

第二收容部‧‧‧15Second Containment Department ‧‧15

頂端‧‧‧15aTop ‧‧15a

底端‧‧‧15bBottom ‧‧15b

振動傳遞液體‧‧‧16Vibration transfer liquid ‧‧16

進氣口‧‧‧17Air inlet ‧‧17

進液口‧‧‧18Inlet ‧‧‧18

導管‧‧‧21Catheter ‧‧21

加熱台‧‧‧22Heating station ‧‧22

噴頭‧‧‧23Nozzle ‧‧23

連接端‧‧‧24Connection ‧‧‧24

噴出端‧‧‧25Spout ‧‧‧25

基板‧‧‧200Substrate ‧‧200

前驅體溶液‧‧‧300Precursor solution ‧‧‧300

圖1為本發明實施例提供之薄膜製備裝置之結構示意圖。FIG. 1 is a schematic structural view of a film preparing apparatus according to an embodiment of the present invention.

圖2為使用本發明實施例提供之薄膜製備裝置製備釕薄膜之示意圖。2 is a schematic view showing the preparation of a ruthenium film using the film preparation apparatus provided by the embodiment of the present invention.

圖3為使用本發明實施例提供之薄膜製備裝置制得之 氧化釕薄膜之掃描電子顯微鏡(SEM)照片。3 is a film preparation apparatus provided by an embodiment of the present invention. Scanning electron microscope (SEM) photograph of a ruthenium oxide film.

薄膜製備裝置‧‧‧100Film preparation equipment ‧‧100

容器‧‧‧11Container ‧‧11

振動傳遞膜‧‧‧12Vibration transfer film ‧‧12

振動元件‧‧‧13Vibration element ‧‧‧13

第一收容部‧‧‧14First Containment Department ‧‧14

第二收容部‧‧‧15Second Containment Department ‧‧15

頂端‧‧‧15aTop ‧‧15a

底端‧‧‧15bBottom ‧‧15b

振動傳遞液體‧‧‧16Vibration transfer liquid ‧‧16

進氣口‧‧‧17Air inlet ‧‧17

進液口‧‧‧18Inlet ‧‧‧18

導管‧‧‧21Catheter ‧‧21

加熱台‧‧‧22Heating station ‧‧22

噴頭‧‧‧23Nozzle ‧‧23

基板‧‧‧200Substrate ‧‧200

前驅體溶液‧‧‧300Precursor solution ‧‧‧300

Claims (10)

一種薄膜製備裝置,其包括霧化裝置以及薄膜沈積裝置,該霧化裝置用於霧化前驅體溶液,該薄膜沈積裝置用於將霧化後之前驅體溶液噴至基板表面以形成薄膜,其改進在於,該霧化裝置包括容器、振動傳遞膜以及振動元件,該振動傳遞膜將容器分隔成第一收容部及第二收容部,該第一收容部填充有振動傳遞液體,該第二收容部用於填充前驅體溶液,該振動元件位於第一收容部,用於產生振動,並使振動通過該振動傳遞液體、振動傳遞膜傳遞至前驅體溶液,從而使前驅體溶液霧化。A film preparation apparatus comprising an atomization device for atomizing a precursor solution, and a thin film deposition device for spraying a precursor solution after atomization onto a surface of a substrate to form a film, The improvement is that the atomization device includes a container, a vibration transmission film, and a vibration element, and the vibration transmission film divides the container into a first receiving portion and a second receiving portion, the first receiving portion is filled with a vibration transmitting liquid, and the second receiving portion is filled The portion is used to fill the precursor solution, and the vibrating element is located at the first receiving portion for generating vibration, and the vibration is transmitted to the precursor solution through the vibration transmitting liquid and the vibration transmitting film, thereby atomizing the precursor solution. 如申請專利範圍第1項所述之薄膜製備裝置,其中,該第二收容部包括遠離振動傳遞膜之頂端以及靠近振動傳遞膜之底端,該頂端之尺寸小於底端之尺寸。The film preparation device of claim 1, wherein the second receiving portion includes a distal end away from the vibration transmitting film and a bottom end adjacent to the vibration transmitting film, the tip having a size smaller than a size of the bottom end. 如申請專利範圍第1項所述之薄膜製備裝置,其中,該第二收容部具有進液口以及進氣口,該進液口用於往第二收容部內加入前驅體溶液,該進氣口用於往第二收容部內充入載氣以將霧化之前驅體溶液攜帶至基板表面。The film preparation device of claim 1, wherein the second receiving portion has a liquid inlet and an air inlet, and the liquid inlet is configured to add a precursor solution to the second receiving portion, the air inlet The second receiving portion is filled with a carrier gas to carry the atomized solution before the atomization to the surface of the substrate. 如申請專利範圍第3項所述之薄膜製備裝置,其中,該進氣口與填充於第二收容部之前驅體溶液液面之間距為3釐米至8釐米。The film preparation device according to claim 3, wherein the air inlet is spaced from the liquid surface of the body solution before filling the second housing portion by a distance of 3 cm to 8 cm. 如申請專利範圍第1項所述之薄膜製備裝置,其中,該霧化裝置還進一步包括紅外檢測裝置,該紅外檢測裝置用於檢測前驅體溶液霧化後液滴之直徑。The film preparation device of claim 1, wherein the atomization device further comprises an infrared detection device for detecting a diameter of the droplet after the atomization of the precursor solution. 如申請專利範圍第1項所述之薄膜製備裝置,其中,該 薄膜沈積裝置包括相對設置之加熱台及噴頭,該加熱台用於承載並加熱基板,該噴頭與第二收容部相連通,用於對基板表面噴出霧化之前驅體溶液。The film preparation device according to claim 1, wherein the film preparation device The thin film deposition apparatus includes a heating table and a shower head disposed opposite to each other, the heating stage is configured to carry and heat the substrate, and the spray head is in communication with the second receiving portion for ejecting the atomized precursor solution on the surface of the substrate. 如申請專利範圍第6項所述之薄膜製備裝置,其中,該薄膜沈積裝置還進一步包括導管,該導管用於連通第二收容部以及噴頭。The film preparation device of claim 6, wherein the film deposition device further comprises a conduit for communicating the second receiving portion and the showerhead. 如申請專利範圍第1項所述之薄膜製備裝置,其中,該振動傳遞膜為聚乙烯膜。The film preparation apparatus according to claim 1, wherein the vibration transmission film is a polyethylene film. 如申請專利範圍第1項所述之薄膜製備裝置,其中,該振動元件為壓電振動片,該振動為超音波。The film preparation device according to claim 1, wherein the vibration element is a piezoelectric vibrating piece, and the vibration is ultrasonic. 如申請專利範圍第1項所述之薄膜製備裝置,其中,該振動傳遞液體為水、甲醇、乙醇或丙酮。The film preparation device according to claim 1, wherein the vibration transmission liquid is water, methanol, ethanol or acetone.
TW97134076A 2008-09-05 2008-09-05 A coating device TWI409360B (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW393521B (en) * 1996-05-23 2000-06-11 Ebara Corp Vaporizer apparatus and film deposition apparatus therewith
TW200615397A (en) * 2004-09-30 2006-05-16 Tokyo Electron Ltd Vaporizer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW393521B (en) * 1996-05-23 2000-06-11 Ebara Corp Vaporizer apparatus and film deposition apparatus therewith
TW200615397A (en) * 2004-09-30 2006-05-16 Tokyo Electron Ltd Vaporizer

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