TWI408829B - Led submount packaging method and package structure thereof - Google Patents
Led submount packaging method and package structure thereof Download PDFInfo
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- TWI408829B TWI408829B TW96142290A TW96142290A TWI408829B TW I408829 B TWI408829 B TW I408829B TW 96142290 A TW96142290 A TW 96142290A TW 96142290 A TW96142290 A TW 96142290A TW I408829 B TWI408829 B TW I408829B
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Abstract
Description
本發明係有關於一種發光二極體之封裝方法及其結構,特別係有關於一種發光二極體次黏著基板封裝方法及其封裝構造。The invention relates to a method for packaging a light-emitting diode and a structure thereof, in particular to a method for packaging a light-emitting diode sub-adhesive substrate and a package structure thereof.
習知發光二極體(LED)之封裝方法大都是直接將LED晶粒固定於預先形成反射槽面之次黏著基板上,然而,實際量產時,常因反射槽面之尺寸過小而使得晶粒固定之難度大幅提高,進而導致封裝成本增加,此外,習知次黏著基板對發光二極體之散熱成效並不佳,因此,容易導致發光二極體之發光效率降低或過熱損毀。Conventional light-emitting diode (LED) packaging methods mostly directly fix the LED die on the secondary adhesive substrate on which the reflective groove surface is formed. However, in actual mass production, the size of the reflective groove surface is often too small to cause the crystal. The difficulty in fixing the particles is greatly increased, which in turn leads to an increase in the cost of packaging. In addition, the conventional secondary adhesive substrate has a poor heat dissipation effect on the light-emitting diode, and thus it is easy to cause the light-emitting efficiency of the light-emitting diode to be lowered or deteriorated.
本發明之主要目的係在於提供一種發光二極體次黏著基板封裝方法及其封裝構造,其封裝方法係包含提供一第一基板,該第一基板係具有一上表面、一相對於該上表面之下表面及複數個定義於該上表面之黏晶區;於該第一基板之該下表面形成複數個散熱凹槽,各該散熱凹槽係對應各該黏晶區,且各該散熱凹槽係具有一底面,各該底面與各該黏晶區之間係具有一承載座;形成一導熱體於各該散熱凹槽中;設置複數個發光二極體於該第一基板之該些黏晶區;提供一第二基板,該第二基板係具有一朝向該第一基板之該上表面之第一表面、一相對於該第一表面之第二表面及複數個連通該第一表面與該第二表面之反射槽孔,各該反射槽孔係對應各該發光二極體及各該黏晶區;以及結合該第二基板與該第一基板,以使各該發光二極體位於各該反射槽孔中,本發明係可降低發光二極體次黏著基板之封裝難度及增加次黏著基板對發光二極體之散熱效能,且該些發光二極體亦可藉由該些反射槽孔之光學作用而形成一線光源,該線光源係可用以取代習知液晶顯示器常用之冷陰極螢光燈管(CCFL)。The main purpose of the present invention is to provide a method for packaging a light-emitting diode sub-adhesive substrate and a package structure thereof, the package method comprising providing a first substrate having an upper surface and a surface opposite to the upper surface a lower surface and a plurality of die-bonding regions defined on the upper surface; forming a plurality of heat-dissipating grooves on the lower surface of the first substrate, each of the heat-dissipating grooves corresponding to each of the die-bonding regions, and each of the heat-dissipating recesses The slot has a bottom surface, and each of the bottom surface and each of the die-bonding regions has a carrier; a heat conductor is formed in each of the heat dissipation grooves; and a plurality of light-emitting diodes are disposed on the first substrate a second substrate having a first surface facing the upper surface of the first substrate, a second surface opposite to the first surface, and a plurality of communicating with the first surface And the reflective slot of the second surface, each of the reflective slot corresponds to each of the light emitting diodes and each of the die bonding regions; and the second substrate and the first substrate are combined to enable each of the light emitting diodes Located in each of the reflection slots, the hair The utility model can reduce the packaging difficulty of the light-emitting diode sub-adhesive substrate and increase the heat-dissipating performance of the sub-adhesive substrate to the light-emitting diode, and the light-emitting diodes can also form a line light source by the optical action of the reflective slots The line source can be used to replace the cold cathode fluorescent lamp (CCFL) commonly used in conventional liquid crystal displays.
請參閱第1A至1E及2A至2F圖,其係本發明之一較佳實施例,一種發光二極體次黏著基板封裝方法,其步驟係詳述如下:首先,請參閱第1A及2A圖,提供一第一基板10,該第一基板10係為矽基板,該第一基板10係具有一上表面10a、一相對於該上表面10a之下表面10b及複數個定義於該上表面10a之黏晶區11;接著,請參閱第1B及2B圖,於該第一基板10之該下表面10b蝕刻形成複數個散熱凹槽12,各該散熱凹槽12係對應各該黏晶區11,且各該散熱凹槽12係具有一底面12a,各該底面12a與各該黏晶區11之間係具有一承載座13,在本實施例中,各該承載座13係具有一厚度T,該厚度T係介於10微米至50微米之間;之後,請參閱第1C及2C圖,電鍍形成一導熱體70於各該散熱凹槽12中,在本實施例中,該導熱體70之材質係可為銅或銀;接著,請參閱第1D及2D圖,設置複數個發光二極體20於該第一基板10之該些黏晶區11,且各該發光二極體20係設置於各該承載座13上,在本實施例中,各該承載座13係可用以支撐各該發光二極體20,且各該發光二極體20所產生之熱係可經由各該承載座13傳導至各該導熱體70,再藉由各該導熱體70傳導至外部,以達到散熱,又,較佳地,該些發光二極體20係可排列成一直線;之後,請參閱第2E圖,提供一第二基板30,在本實施例中,該第二基板30係為矽基板,且該第二基板30係具有一朝向該第一基板10之該上表面10a之第一表面30a、一相對於該第一表面30a之第二表面30b及複數個連通該第一表面30a與該第二表面30b之反射槽孔31,在本實施例中,各該反射槽孔31係呈梯形錐狀,且各該反射槽孔31係對應各該發光二極體20及各該黏晶區11,又,各該反射槽孔31係具有一光反射槽面31a;最後,請參閱第1E及2F圖,結合該第二基板30與該第一基板10,以使各該發光二極體20位於各該反射槽孔31中,其中各該光反射槽面31a係朝向各該發光二極體20,用以反射各該發光二極體20所發出之光,又,在本實施例中,該第二基板30係可以膠黏方式或金屬共晶方式結合於該第一基板10之該上表面10a。Please refer to FIGS. 1A to 1E and 2A to 2F, which are a preferred embodiment of the present invention, and a method for packaging a light-emitting diode sub-adhesive substrate, the steps of which are detailed as follows: First, please refer to FIGS. 1A and 2A. A first substrate 10 is provided as a germanium substrate. The first substrate 10 has an upper surface 10a, a lower surface 10b opposite to the upper surface 10a, and a plurality of upper surfaces 10a defined thereon. A plurality of heat dissipating grooves 12 are formed in the lower surface 10b of the first substrate 10, and the heat dissipating grooves 12 correspond to the respective die bonding regions 11 . Each of the heat dissipating recesses 12 has a bottom surface 12a. Each of the bottom surface 12a and each of the adhesive crystal regions 11 has a carrier 13 . In this embodiment, each of the bearing blocks 13 has a thickness T. The thickness T is between 10 micrometers and 50 micrometers; after that, referring to FIGS. 1C and 2C, a heat conductor 70 is formed in each of the heat dissipation grooves 12, and in the embodiment, the heat conductor 70 The material may be copper or silver; then, referring to Figures 1D and 2D, a plurality of LEDs 20 are disposed at the first The accommodating regions 11 of the slabs 10 are disposed on the respective pedestals 13 . In this embodiment, the pedestals 13 can be used to support the illuminating diodes 20 . The heat generated by each of the light-emitting diodes 20 can be conducted to each of the heat-conducting bodies 70 via the respective carriers 13 and then conducted to the outside by the heat-conducting bodies 70 to achieve heat dissipation. The light emitting diodes 20 can be arranged in a straight line; then, referring to FIG. 2E, a second substrate 30 is provided. In this embodiment, the second substrate 30 is a germanium substrate, and the second substrate is The 30 series has a first surface 30a facing the upper surface 10a of the first substrate 10, a second surface 30b opposite to the first surface 30a, and a plurality of communicating with the first surface 30a and the second surface 30b. In the present embodiment, each of the reflective slots 31 has a trapezoidal tapered shape, and each of the reflective slots 31 corresponds to each of the LEDs 20 and the respective die-bonding regions 11, and each The reflective slot 31 has a light reflecting groove surface 31a; finally, please refer to FIGS. 1E and 2F, in combination with the second substrate 30 and the first The plate 10 is disposed such that each of the light-emitting diodes 20 is located in each of the reflective slots 31, wherein each of the light-reflecting groove faces 31a faces each of the light-emitting diodes 20 for reflecting each of the light-emitting diodes 20 The emitted light, in this embodiment, the second substrate 30 can be bonded to the upper surface 10a of the first substrate 10 in an adhesive manner or a metal eutectic manner.
在本實施例中,為了進一步提高各該發光二極體20之散熱速率,首先,請參閱第3A及4A圖,該第一基板10之各該承載座13係可形成有至少一貫穿孔131,各該貫穿孔131係連通該第一基板10之各該黏晶區11及各該散熱凹槽12之各該底面12a,接著,請參閱第3B及4B圖,各該導熱體70可另形成於各該承載座13之各該貫穿孔131中,之後,請參閱第3C及4C圖,當各該發光二極體20設置於各該承載座13上時,各該導熱體70係可直接接觸各該發光二極體20,而各該發光二極體20所產生之熱可直接藉由各該導熱體70傳導至外部,以達到快速散熱。又,請參閱第5圖,在另一實施例中,可另包含先形成一鈦層50於該第一基板10之該上表面10a及形成一金層60於該鈦層50上,由於該鈦層50及該金層60皆具有高熱傳導係數,因此,亦有助於增加次黏著基板對各該發光二極體20之散熱效能。或者,請參閱第6A至6C圖,在又一實施例中,首先,請參閱第6A圖,其係可在設置該些發光二極體20於該第一基板10之該些黏晶區12之前,先對該第一基板10之該上表面10a進行一研磨步驟,請參閱第6B圖,其目的是以研磨方式去除各該承載座13並顯露各該導熱體70於該上表面10a,之後,請參閱第6C圖,將各該發光二極體20固定於各該導熱體70上,在本實施例中,其係可形成一金屬銲料層80於各該發光二極體20與各該導熱體70之間,各該發光二極體20係可藉由各該金屬銲料層80固定於各該導熱體70上,且各該發光二極體20所產生之熱可藉由各該金屬銲料層80及各該導熱體70快速傳導至外部,進而達到快速散熱。In this embodiment, in order to further increase the heat dissipation rate of each of the light-emitting diodes 20, first, referring to FIGS. 3A and 4A, each of the carrier bases 13 of the first substrate 10 may be formed with at least a permanent through hole 131. Each of the through holes 131 communicates with each of the die bonding regions 11 of the first substrate 10 and each of the bottom surfaces 12a of the heat dissipation grooves 12, and then, referring to FIGS. 3B and 4B, each of the heat conductors 70 may be formed separately. In each of the through holes 131 of each of the carriers 13, after referring to FIGS. 3C and 4C, when the light emitting diodes 20 are disposed on the respective carriers 13, each of the heat conductors 70 can be directly Each of the light-emitting diodes 20 is in contact with each of the light-emitting diodes 20, and the heat generated by each of the light-emitting diodes 20 can be directly conducted to the outside through the heat-conducting body 70 to achieve rapid heat dissipation. In addition, referring to FIG. 5, in another embodiment, a titanium layer 50 may be formed on the upper surface 10a of the first substrate 10 and a gold layer 60 may be formed on the titanium layer 50. Both the titanium layer 50 and the gold layer 60 have a high thermal conductivity and, therefore, also contribute to increasing the heat dissipation performance of the sub-adhesive substrate for each of the light-emitting diodes 20. Alternatively, please refer to FIG. 6A to FIG. 6C. In still another embodiment, first, referring to FIG. 6A, the photodiode 20 may be disposed on the die-bonding regions 12 of the first substrate 10. Previously, a grinding step is performed on the upper surface 10a of the first substrate 10. Referring to FIG. 6B, the purpose is to remove each of the carriers 13 by grinding and expose the heat conducting bodies 70 on the upper surface 10a. Then, referring to FIG. 6C, each of the light-emitting diodes 20 is fixed to each of the heat-conducting bodies 70. In this embodiment, a metal solder layer 80 is formed on each of the light-emitting diodes 20 and Each of the light-emitting diodes 20 can be fixed to each of the heat-conducting bodies 70 by the respective metal solder layers 80, and the heat generated by each of the light-emitting diodes 20 can be The metal solder layer 80 and each of the heat conductors 70 are quickly conducted to the outside to achieve rapid heat dissipation.
請再參閱第1E及2F圖,其係利用本發明之封裝方法所得之封裝構造係包含有一第一基板10、複數個導熱體70、複數個發光二極體20以及一第二基板30,該第一基板10係為矽基板,且該第一基板10係具有一上表面10a、一相對於該上表面10a之下表面10b及複數個定義於該上表面10a之黏晶區11,該下表面10b係形成有複數個散熱凹槽12,各該散熱凹槽12係對應各該黏晶區11,且各該散熱凹槽12係具有一底面12a,各該底面12a與各該黏晶區11之間係具有一承載座13,在本實施例中,各該承載座13係具有一厚度T,該厚度T係介於10微米至50微米之間,該些導熱體70係以電鍍方式分別形成於各該散熱凹槽12中,在本實施例中,該些導熱體70之材質係可為銅或銀,該些發光二極體20係分別設置於該第一基板10之各該黏晶區11,且各該發光二極體20係設置於各該承載座13上,在本實施例中,各該承載座13係可用以支撐各該發光二極體20,且各該發光二極體20所產生之熱係可經由各該承載座13傳導至各該導熱體70,再藉由各該導熱體70傳導至外部,以達到散熱,又,較佳地,該些發光二極體20係可排列成一直線,該第二基板30係結合於該第一基板10之該上表面10a,該第二基板30係具有一朝向該第一基板10之該上表面10a之第一表面30a、一相對於該第一表面30a之第二表面30b及複數個連通該第一表面30a與該第二表面30b之反射槽孔31,各該反射槽孔31係呈梯形錐狀,且各該反射槽孔31係對應各該發光二極體20及各該黏晶區11,又,各該反射槽孔31係具有一光反射槽面31a,在本實施例中,各該發光二極體20係位於各該反射槽孔31中,且各該光反射槽面31a係朝向各該發光二極體20,用以反射各該發光二極體20所發出之光。Referring to FIGS. 1E and 2F , the package structure obtained by the packaging method of the present invention comprises a first substrate 10 , a plurality of thermal conductors 70 , a plurality of LEDs 20 , and a second substrate 30 . The first substrate 10 is a germanium substrate, and the first substrate 10 has an upper surface 10a, a lower surface 10b opposite to the upper surface 10a, and a plurality of die-bonding regions 11 defined on the upper surface 10a. The surface 10b is formed with a plurality of heat dissipating recesses 12, each of the heat dissipating recesses 12 corresponding to each of the adhesive crystal regions 11, and each of the heat dissipating recesses 12 has a bottom surface 12a, and each of the bottom surface 12a and each of the adhesive crystal regions 11 has a carrier 13 in the embodiment, each of the carrier 13 has a thickness T, the thickness T is between 10 micrometers and 50 micrometers, and the thermal conductors 70 are electroplated. The heat dissipating bodies 70 are respectively formed of copper or silver, and the light emitting diodes 20 are respectively disposed on the first substrate 10. The die-bonding region 11 and each of the light-emitting diodes 20 are disposed on each of the carrier seats 13, in this embodiment, The carrier 13 can be used to support the LEDs 20, and the heat generated by each of the LEDs can be transmitted to each of the heat conductors 70 via the carrier 13, and the heat can be transferred through the heat conduction bodies. The body 70 is conducted to the outside to achieve heat dissipation. Further, preferably, the light emitting diodes 20 are arranged in a line, and the second substrate 30 is bonded to the upper surface 10a of the first substrate 10, the first The second substrate 30 has a first surface 30a facing the upper surface 10a of the first substrate 10, a second surface 30b opposite to the first surface 30a, and a plurality of communicating with the first surface 30a and the second surface. Each of the reflective slots 31 has a trapezoidal tapered shape, and each of the reflective slots 31 corresponds to each of the LEDs 20 and the respective die-bonding regions 11, and each of the reflective slots The light-receiving groove surface 31a is disposed in each of the reflection slots 31, and each of the light-reflecting groove surfaces 31a faces each of the light-emitting diodes 20; For reflecting the light emitted by each of the light-emitting diodes 20.
另外,為了進一步提高各該發光二極體20之散熱速率,請再參閱第4C圖,在本實施例中,該第一基板10之各該承載座13係可形成有至少一貫穿孔131,各該貫穿孔131係連通該第一基板10之各該黏晶區11及各該散熱凹槽12之各該底面12a,此外,各該導熱體70可另形成於各該承載座13之各該貫穿孔131中,且各該導熱體70係可直接接觸各該發光二極體20,以使各該發光二極體20所產生之熱直接藉由各該導熱體70傳導至外部,進而達到快速散熱。又,請再參閱第5圖,在另一實施例中,該封裝構造另具有一鈦層50及一金層60,該鈦層50係形成於該第一基板10之該上表面10a,而該金層60係形成於該鈦層50上,由於該鈦層50及該金層60皆具有高熱傳導係數,因此,有助於增加次黏著基板對各該發光二極體20之散熱效能。In addition, in order to further improve the heat dissipation rate of each of the light-emitting diodes 20, please refer to FIG. 4C. In this embodiment, each of the carrier bases 13 of the first substrate 10 can be formed with at least a uniform through hole 131, each of which is formed. The through hole 131 is connected to each of the die-bonding regions 11 of the first substrate 10 and the bottom surface 12a of each of the heat-dissipating recesses 12. Further, each of the heat-conducting bodies 70 may be separately formed on each of the carriers 13 In the through hole 131, each of the heat conductors 70 can directly contact each of the light emitting diodes 20, so that the heat generated by each of the light emitting diodes 20 is directly transmitted to the outside through the heat conducting bodies 70, thereby achieving Fast heat dissipation. In addition, referring to FIG. 5, in another embodiment, the package structure further has a titanium layer 50 and a gold layer 60 formed on the upper surface 10a of the first substrate 10, and The gold layer 60 is formed on the titanium layer 50. Since the titanium layer 50 and the gold layer 60 both have a high thermal conductivity, it helps to increase the heat dissipation performance of the sub-adhesive substrate for each of the light-emitting diodes 20.
又,請參閱第7圖,在本實施例中,該封裝構造另具有一接合層90,該接合層90係形成於該第一基板10之該上表面10a與該第二基板30之該第一表面30a之間,該第二基板30係可藉由該接合層90結合於該第一基板10之該上表面10a,其中,當該第二基板30選擇以膠黏方式結合於該第一基板10之該上表面10a時,該接合層90係為一黏膠層,反之,當該第二基板30選擇以金屬共晶方式結合於該第一基板10之該上表面10a時,該接合層90係為一金屬共晶結合層。In addition, referring to FIG. 7 , in the embodiment, the package structure further has a bonding layer 90 formed on the upper surface 10 a of the first substrate 10 and the second substrate 30 . Between a surface 30a, the second substrate 30 can be bonded to the upper surface 10a of the first substrate 10 by the bonding layer 90, wherein when the second substrate 30 is selectively bonded to the first surface When the upper surface 10a of the substrate 10 is used, the bonding layer 90 is an adhesive layer. Otherwise, when the second substrate 30 is selectively metal-eutectic bonded to the upper surface 10a of the first substrate 10, the bonding is performed. Layer 90 is a metal eutectic bonding layer.
本發明之封裝方法係可降低發光二極體次黏著基板之封裝難度及降低封裝成本,且藉由該鈦層50、該金層60及該些導熱體70可大幅提昇次黏著基板對該些發光二極體20之散熱效能,此外,該些發光二極體20亦可藉由該些反射槽孔31之光學作用而形成一線光源,該線光源係可用以取代習知液晶顯示器常用之冷陰極螢光燈管(CCFL)。The packaging method of the present invention can reduce the packaging difficulty of the LED sub-adhesive substrate and reduce the packaging cost, and the titanium layer 50, the gold layer 60 and the thermal conductors 70 can greatly enhance the sub-adhesive substrate. The light-emitting diodes 20 can also be used to form a line source by the optical action of the reflective slots 31. The line source can be used to replace the conventional cold-type liquid crystal display. Cathode fluorescent lamp (CCFL).
本發明之保護範圍當視後附之申請專利範圍所界定者為準,任何熟知此項技藝者,在不脫離本發明之精神和範圍內所作之任何變化與修改,均屬於本發明之保護範圍。The scope of the present invention is defined by the scope of the appended claims, and any changes and modifications made by those skilled in the art without departing from the spirit and scope of the invention are within the scope of the present invention. .
10...第一基板10. . . First substrate
10a...上表面10a. . . Upper surface
10b...下表面10b. . . lower surface
11...黏晶區11. . . Zinc crystal region
12...散熱凹槽12. . . Heat sink
12a...底面12a. . . Bottom
13...承載座13. . . Carrier
131...貫穿孔131. . . Through hole
20...發光二極體20. . . Light-emitting diode
30...第二基板30. . . Second substrate
30a...第一表面30a. . . First surface
30b...第二表面30b. . . Second surface
31...反射槽孔31. . . Reflecting slot
31a...光反射槽面31a. . . Light reflecting groove surface
50...鈦層50. . . Titanium layer
60...金層60. . . Gold layer
70...導熱體70. . . Thermal conductor
80...金屬銲料層80. . . Metal solder layer
90...接合層90. . . Bonding layer
T...厚度T. . . thickness
第1A至1E圖:依據本發明之一較佳實施例,一種發光二極體次黏著基板封裝方法流程示意圖。1A to 1E are diagrams showing a flow chart of a method for packaging a light-emitting diode sub-adhesive substrate according to a preferred embodiment of the present invention.
第2A圖:沿第1A圖A-A線,提供一第一基板之製程剖面圖。Figure 2A: A cross-sectional view of a process for providing a first substrate along line A-A of Figure 1A.
第2B圖:沿第1B圖B-B線,形成複數個散熱凹槽之製程剖面圖。Figure 2B: A cross-sectional view of a process for forming a plurality of heat dissipating grooves along line B-B of Figure 1B.
第2C圖:沿第1C圖C-C線,形成一導熱體於各該散熱凹槽之製程剖面圖。2C is a cross-sectional view showing a process of forming a heat conductor in each of the heat dissipating grooves along the line C-C of FIG. 1C.
第2D圖:沿第1D圖D-D線,設置複數個發光二極體於該第一基板之製程剖面圖。2D is a cross-sectional view showing a process of forming a plurality of LEDs on the first substrate along the D-D line of the 1DD.
第2E圖:提供一第二基板之製程剖面圖。Figure 2E is a cross-sectional view showing a process of providing a second substrate.
第2F圖:沿第1E圖E-E線,結合該第二基板與該第一基板之製程剖面圖。FIG. 2F is a cross-sectional view showing a process of bonding the second substrate and the first substrate along the line E-E of FIG. 1E.
第3A至3C圖:依據本發明之一具體實施例,利用貫穿孔及導熱體提高發光二極體散熱速率之製作方法流程圖。3A to 3C are views showing a flow chart of a method for manufacturing a heat dissipation rate of a light-emitting diode by using a through hole and a heat conductor according to an embodiment of the present invention.
第4A圖:沿第3A圖F-F線,承載座形成貫穿孔之製程剖面圖。Figure 4A: A cross-sectional view of the process of forming a through-hole along the F-F line of Figure 3A.
第4B圖:沿第3B圖G-G線,導熱體形成於貫穿孔之製程剖面圖。Fig. 4B is a cross-sectional view showing the process of forming a heat conductor in the through hole along the line G-G of Fig. 3B.
第4C圖:沿第3C圖H-H線,發光二極體與導熱體接觸之製程剖面圖。Figure 4C: A cross-sectional view of the process in which the light-emitting diode is in contact with the heat conductor along the line H-H of Figure 3C.
第5圖:依據本發明之一較佳實施例,該第一基板之上表面形成有一鈦層及一金層之結構示意圖。FIG. 5 is a schematic view showing the structure of a titanium layer and a gold layer formed on the upper surface of the first substrate according to a preferred embodiment of the present invention.
第6A至6C圖:依據本發明之另一具體實施例,發光二極體直接設置於導熱體上之製作方法流程圖。6A to 6C are views showing a flow chart of a method for fabricating a light-emitting diode directly on a heat conductor according to another embodiment of the present invention.
第7圖:依據本發明之一較佳實施例,一種發光二極體次黏著基板封裝構造圖。Figure 7 is a diagram showing a package structure of a light-emitting diode sub-adhesive substrate according to a preferred embodiment of the present invention.
10...第一基板10. . . First substrate
10a...上表面10a. . . Upper surface
10b...下表面10b. . . lower surface
11...黏晶區11. . . Zinc crystal region
12...散熱凹槽12. . . Heat sink
12a...底面12a. . . Bottom
13...承載座13. . . Carrier
20...發光二極體20. . . Light-emitting diode
30...第二基板30. . . Second substrate
30a...第一表面30a. . . First surface
30b...第二表面30b. . . Second surface
31...反射槽孔31. . . Reflecting slot
31a...光反射槽面31a. . . Light reflecting groove surface
50...鈦層50. . . Titanium layer
60...金層60. . . Gold layer
70...導熱體70. . . Thermal conductor
90...接合層90. . . Bonding layer
Claims (20)
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US20060198162A1 (en) * | 2003-03-18 | 2006-09-07 | Sumitomo Electric Industries, Ltd. | Light emitting element mounting member, and semiconductor device using the same |
US20060214178A1 (en) * | 2005-03-24 | 2006-09-28 | Samsung Electro-Mechanics Co., Ltd. | Light emitting diode package and fabrication method thereof |
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