TWI407847B - Heat dissipating plate - Google Patents
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本發明係關於一種散熱基板,可供電子元件使用。具體而言,本發明係關於一種可供發光二極體使用之散熱基板。The present invention relates to a heat dissipating substrate for use with electronic components. In particular, the present invention relates to a heat dissipating substrate for use with a light emitting diode.
近年來隨著高功率發光二極體(LED)技術的發展,其發光效率已逐漸提升至90~120lm/W以上。然而,其電光轉換效率僅約15~20%。換言之,其輸入之電能中仍有絕大部份轉換成熱能,這些熱能若不能快速導至外界環境,將會造成晶片溫度上升,進而影響發光強度及壽命。因此,高功率LED產品的熱管理問題越來越受到重視。In recent years, with the development of high-power light-emitting diode (LED) technology, its luminous efficiency has gradually increased to above 90~120lm/W. However, its electro-optic conversion efficiency is only about 15-20%. In other words, most of the input electrical energy is converted into thermal energy. If the thermal energy cannot be quickly led to the external environment, the temperature of the wafer will rise, which will affect the luminous intensity and life. Therefore, the thermal management of high-power LED products is receiving more and more attention.
在LED產品中,印刷電路板是不可或缺的部分,提供電子元件安裝與互相連接的支撐載體,其中又以散熱基板為主要材料。一般業界最常使用金屬基板作為散熱基板,如圖1所示,習知散熱基板80之結構包含金屬基板10、絕緣層30及銅箔層50。此類型基板最大的散熱瓶頸即是介於銅箔層50與金屬基板10之間的絕緣層30。絕緣層30大多使用環氧樹脂作為主要材料,但因其熱傳導係數偏低,必須另行添加導熱填料,如氧化鋁、氮化鋁與氮化硼等填料,來提高該層的熱傳導係數,進而降低該基板的熱阻抗。即使如此,絕緣層30之熱傳導係數仍遠低於金屬材料,故仍為散熱基板80散熱的主要瓶頸。此外,當導熱填料添加含量偏高時,在製程上可能會出現膠體分散不均、甚至分層等現象,影響該層之散熱效率與機械特性。In LED products, printed circuit boards are an indispensable part, providing support carriers for mounting and interconnecting electronic components, with heat-dissipating substrates as the main material. Generally, a metal substrate is generally used as a heat dissipation substrate in the industry. As shown in FIG. 1, the structure of the conventional heat dissipation substrate 80 includes a metal substrate 10, an insulating layer 30, and a copper foil layer 50. The largest thermal bottleneck of this type of substrate is the insulating layer 30 between the copper foil layer 50 and the metal substrate 10. Most of the insulating layer 30 uses epoxy resin as the main material, but because of its low heat transfer coefficient, it is necessary to separately add a heat conductive filler such as alumina, aluminum nitride and boron nitride to increase the heat transfer coefficient of the layer and thereby reduce The thermal impedance of the substrate. Even so, the thermal conductivity of the insulating layer 30 is still much lower than that of the metal material, so it is still the main bottleneck for heat dissipation of the heat dissipation substrate 80. In addition, when the content of the thermally conductive filler is too high, uneven dispersion or even delamination of the colloid may occur in the process, which affects the heat dissipation efficiency and mechanical properties of the layer.
本發明之主要目的為提供一種散熱基板,具有較佳之散熱效果。The main object of the present invention is to provide a heat dissipating substrate with better heat dissipation effect.
本發明之另一目的為提供一種散熱基板,具有較薄之厚度。Another object of the present invention is to provide a heat dissipating substrate having a relatively thin thickness.
本發明之散熱基板包含基板、層疊絕緣層、複數個孔洞以及導熱層。層疊絕緣層設置於基板上,包含複數個層疊設置之絕緣層。複數個孔洞貫穿層疊絕緣層,且其內填充有導熱材料。導熱層設置於層疊絕緣層上。The heat dissipation substrate of the present invention comprises a substrate, a laminated insulating layer, a plurality of holes, and a heat conductive layer. The laminated insulating layer is disposed on the substrate and includes a plurality of insulating layers disposed in a stacked manner. A plurality of holes penetrate the laminated insulating layer and are filled with a heat conductive material. The heat conductive layer is disposed on the laminated insulating layer.
基板可包含玻璃纖維樹脂、金屬或合金。複數個絕緣層之材料包含為聚醯亞胺樹脂、環氧樹脂、丙烯酸系樹脂、胺基甲酸酯系樹脂、有機矽樹脂、聚對環二甲苯系樹脂、雙馬來醯亞胺(Bimaleimide resin)系樹脂、聚醚酮樹脂、不飽和聚酯樹脂、聚酰胺樹脂、聚氨酯樹脂、酚醛樹脂、聚醚砜樹脂、聚對苯二甲酸乙二醇酯或其混合物。導熱材料之熱傳導係數較佳係大於10W/mK,包含金屬、合金、金屬或非金屬及其氧化物、金屬-高分子複合材料、導熱矽樹脂或其混合物。其中,金屬可為銀、銅、鋁、鎳或鐵,合金可為錫鉛合金、錫鉛銀合金或錫銀銅合金。金屬或非金屬及其氧化物可為氧化鋁、氮化硼、氮化鋁、碳化矽或奈米碳管等。層疊絕緣層厚度小於100μm。導熱層可包含金屬或合金。The substrate may comprise a glass fiber resin, a metal or an alloy. The material of the plurality of insulating layers comprises a polyimide resin, an epoxy resin, an acrylic resin, a urethane resin, an organic resin, a polyparaxylene resin, and a bimaleimide (Bimaleimide). Resin, polyether ketone resin, unsaturated polyester resin, polyamide resin, urethane resin, phenol resin, polyether sulfone resin, polyethylene terephthalate or a mixture thereof. The thermal conductivity of the thermally conductive material is preferably greater than 10 W/mK and comprises metals, alloys, metals or non-metals and oxides thereof, metal-polymer composites, thermally conductive ruthenium resins or mixtures thereof. The metal may be silver, copper, aluminum, nickel or iron, and the alloy may be a tin-lead alloy, a tin-lead-silver alloy or a tin-silver-copper alloy. The metal or non-metal and its oxide may be alumina, boron nitride, aluminum nitride, tantalum carbide or carbon nanotubes. The laminated insulating layer has a thickness of less than 100 μm. The thermally conductive layer may comprise a metal or an alloy.
複數個孔洞可貫穿導熱層及層疊絕緣層,或貫穿層疊絕緣層及基板,或貫穿導熱層、層疊絕緣層及基板。散熱基板進一步包含散熱層,設置於基板之下,散熱層包含為金屬或合金。複數個孔洞可貫穿導熱層、層疊絕緣層、基板及散熱層。在不同實施例中,層疊絕緣層可直接由聚醯亞胺構成。The plurality of holes may extend through the heat conducting layer and the laminated insulating layer, or may penetrate the insulating layer and the substrate, or penetrate the heat conducting layer, the laminated insulating layer, and the substrate. The heat dissipation substrate further includes a heat dissipation layer disposed under the substrate, and the heat dissipation layer is made of a metal or an alloy. A plurality of holes may penetrate the heat conducting layer, the laminated insulating layer, the substrate, and the heat dissipation layer. In various embodiments, the laminated insulating layer can be composed directly of polyimide.
如圖2所示之實施例,本發明之散熱基板800包含基板100、層疊絕緣層300、複數個孔洞400以及導熱層500。基板100可包含玻璃纖維樹脂、金屬或合金。具體而言,基板100係用以承載一電子元件。因此,凡具有良好剛性及硬度之材料基本上皆可用於製作基板100。其中,基板100較佳係使用金屬或合金製成,由於此類材料兼具有良好的導熱性,故可進一步提升散熱基板800整體之散熱效果。As shown in the embodiment of FIG. 2, the heat dissipation substrate 800 of the present invention includes a substrate 100, a laminated insulating layer 300, a plurality of holes 400, and a heat conductive layer 500. The substrate 100 may comprise a glass fiber resin, a metal or an alloy. Specifically, the substrate 100 is used to carry an electronic component. Therefore, materials having good rigidity and hardness can be basically used for fabricating the substrate 100. The substrate 100 is preferably made of a metal or an alloy. Since such a material has good thermal conductivity, the heat dissipation effect of the heat dissipation substrate 800 as a whole can be further improved.
層疊絕緣層300設置於基板100上,包含複數個層疊設置之絕緣層310。絕緣層310係選用具有高電阻抗之材料,包含為聚醯亞胺樹脂、環氧樹脂、丙烯酸系樹脂、胺基甲酸酯系樹脂、有機矽樹脂、聚對環二甲苯系樹脂、雙馬來醯亞胺(Bimaleimide resin)系樹脂、聚醚酮樹脂、不飽和聚酯樹脂、聚酰胺樹脂、聚氨酯樹脂、酚醛樹脂、聚醚砜樹脂、聚對苯二甲酸乙二醇酯或其混合物,且較佳係為聚醯亞胺樹脂。其中,各個絕緣層310可選用相同或不同之材料,亦即可用相同或不同的材料依次層疊出相鄰之絕緣層310。另一方面,製程當中可藉由控制形成條件例如比例、溫度、時間等,令使用相同材料之不同絕緣層310具有不同之物理、化學性質。The laminated insulating layer 300 is disposed on the substrate 100 and includes a plurality of insulating layers 310 disposed in a stacked manner. The insulating layer 310 is made of a material having high electrical resistance, and is composed of a polyimide resin, an epoxy resin, an acrylic resin, a urethane resin, an organic resin, a polyparaxylene resin, and a double horse. a Bimaleimide resin, a polyether ketone resin, an unsaturated polyester resin, a polyamide resin, a polyurethane resin, a phenol resin, a polyether sulfone resin, a polyethylene terephthalate or a mixture thereof, It is preferably a polyimine resin. Wherein, each of the insulating layers 310 may be made of the same or different materials, that is, the adjacent insulating layers 310 may be sequentially stacked by the same or different materials. On the other hand, in the process, different insulating layers 310 using the same material can have different physical and chemical properties by controlling formation conditions such as ratio, temperature, time, and the like.
以形成總厚度相同之層疊絕緣層300而言,相較於直接由單一但厚度較厚之絕緣層310形成,由複數個厚度較薄之絕緣層310共同層疊成之層疊絕緣層300具有較高之崩潰電壓。亦即若層疊絕緣層300係由層疊設置之絕緣層310構成,即使總厚度較薄,其崩潰電壓仍可不低於由單一絕緣層310形成之總厚度較厚之層疊絕緣層300之崩潰電壓。換言之,若層疊絕緣層300係由層疊設置之絕緣層310構成,若以複數個絕緣層310共同層疊形成層疊絕緣層300,可在減少層疊絕緣層300整體厚度之同時,使其仍具有高崩潰電壓。藉此,可進一步減少散熱基板800之整體厚度。在較佳實施例中,層疊絕緣層300總厚度小於100μm,崩潰電壓可大於1kV。另一方面,層疊絕緣層300之玻璃轉換溫度較佳係高於250℃,其與基板100之間的剝離強度較佳係大於0.6kgf/cm。In the case of forming the laminated insulating layer 300 having the same total thickness, the laminated insulating layer 300 is formed by laminating a plurality of insulating layers 310 having a relatively small thickness as compared with the insulating layer 310 directly formed of a single thick thickness. The breakdown voltage. That is, if the laminated insulating layer 300 is composed of the insulating layers 310 which are laminated, even if the total thickness is thin, the breakdown voltage is not lower than the breakdown voltage of the laminated insulating layer 300 having a thick total thickness formed by the single insulating layer 310. In other words, if the laminated insulating layer 300 is composed of the insulating layers 310 which are laminated, if the laminated insulating layer 300 is formed by laminating a plurality of insulating layers 310, the thickness of the laminated insulating layer 300 can be reduced while still having a high collapse. Voltage. Thereby, the overall thickness of the heat dissipation substrate 800 can be further reduced. In a preferred embodiment, the laminated insulating layer 300 has a total thickness of less than 100 μm and a breakdown voltage of greater than 1 kV. On the other hand, the glass transition temperature of the laminated insulating layer 300 is preferably higher than 250 ° C, and the peel strength between the laminated insulating layer 300 and the substrate 100 is preferably more than 0.6 kgf / cm.
如圖2所示之實施例,複數個孔洞400貫穿層疊絕緣層300,且其內填充有導熱材料410。電子元件600(請參見圖3)運作時產生之熱能可藉由孔洞400內部之導熱材料410傳導離開導熱層500,進一步由基板100散熱至外界環境。其中,孔洞400之位置、數量、內徑或分佈方式等,可根據電子元件600之種類、大小、安裝位置、覆蓋之面積等加以設計及配置。導熱材料之熱傳導係數較佳係大於10W/mK,包含金屬、合金、金屬或非金屬及其氧化物、金屬-高分子複合材料、導熱矽樹脂或其混合物。其中,金屬可為銀、銅、鋁、鎳或鐵,合金可為錫鉛合金、錫鉛銀合金或錫銀銅合金。金屬或非金屬及其氧化物可為氧化鋁、氮化硼、氮化鋁、碳化矽或奈米碳管等。層疊絕緣層厚度小於100μm。導熱層可包含金屬或合金。導熱材料填充於孔洞400的方式可視其材料特性變化,例如可在導熱矽樹脂導熱物為流動狀態時將其灌入孔洞400,或使金屬導熱物電鍍形成於孔洞400中,或以機械力將固態金屬-高分子複合材料導熱物壓入孔洞400。其中,導熱物不限於填滿孔洞400,亦可以覆蓋孔洞400側壁之方式設置。層疊絕緣層厚度小於100μm。該導熱層可包含金屬或合金。導熱層500設置於層疊絕緣層300上。In the embodiment shown in FIG. 2, a plurality of holes 400 extend through the laminated insulating layer 300 and are filled with a thermally conductive material 410 therein. The thermal energy generated during operation of the electronic component 600 (see FIG. 3) can be conducted away from the thermally conductive layer 500 by the thermally conductive material 410 inside the hole 400, and further dissipated by the substrate 100 to the external environment. The position, the number, the inner diameter or the distribution manner of the hole 400 can be designed and configured according to the type, size, installation position, and coverage area of the electronic component 600. The thermal conductivity of the thermally conductive material is preferably greater than 10 W/mK and comprises metals, alloys, metals or non-metals and oxides thereof, metal-polymer composites, thermally conductive ruthenium resins or mixtures thereof. The metal may be silver, copper, aluminum, nickel or iron, and the alloy may be a tin-lead alloy, a tin-lead-silver alloy or a tin-silver-copper alloy. The metal or non-metal and its oxide may be alumina, boron nitride, aluminum nitride, tantalum carbide or carbon nanotubes. The laminated insulating layer has a thickness of less than 100 μm. The thermally conductive layer may comprise a metal or an alloy. The manner in which the heat conductive material is filled in the hole 400 may vary depending on the material properties thereof, for example, when the heat conductive resin heat conductive material is in a flowing state, it is poured into the hole 400, or the metal heat conductive material is plated in the hole 400, or mechanically The solid metal-polymer composite heat conductive material is pressed into the hole 400. The heat conductive material is not limited to filling the hole 400, and may be disposed to cover the sidewall of the hole 400. The laminated insulating layer has a thickness of less than 100 μm. The thermally conductive layer can comprise a metal or an alloy. The heat conductive layer 500 is disposed on the laminated insulating layer 300.
在不同實施例中,複數個孔洞400可視設計需求貫穿導熱層500及層疊絕緣層300,或貫穿層疊絕緣層300及基板100,或貫通導熱層500、層疊絕緣層300及基板100。如圖3所示之不同實施例,複數個孔洞400貫穿導熱層500及層疊絕緣層300,其中,複數個孔洞400進一步係設置於電子元件600正下方。具體而言,電子元件600產生之熱係直接由下方孔洞400中的導熱材料410傳導離開。此時,由於導熱材料410未與導熱層500接觸,故導熱材料410及導熱層500兩者均可使用金屬而不會發生短路狀況。至於其他導熱材料410有與導熱層500接觸之實施例,導熱材料410可使用不具導電性之物質以避免短路。In various embodiments, the plurality of holes 400 may penetrate the heat conductive layer 500 and the laminated insulating layer 300 as shown in the design, or penetrate the laminated insulating layer 300 and the substrate 100, or penetrate the heat conductive layer 500, the laminated insulating layer 300, and the substrate 100. As shown in FIG. 3 , a plurality of holes 400 extend through the heat conducting layer 500 and the laminated insulating layer 300 , wherein the plurality of holes 400 are further disposed directly under the electronic component 600 . In particular, the heat generated by the electronic component 600 is conducted directly away from the thermally conductive material 410 in the lower aperture 400. At this time, since the heat conductive material 410 is not in contact with the heat conductive layer 500, both the heat conductive material 410 and the heat conductive layer 500 can use metal without a short circuit condition. As for other thermally conductive materials 410 having embodiments in contact with the thermally conductive layer 500, the thermally conductive material 410 may use materials that are not electrically conductive to avoid short circuits.
在圖4所示之不同實施例中,複數個孔洞400係貫穿層疊絕緣層300及基板100。散熱基板800進一步包含散熱層150,設置於基板100之下,亦即於基板100相對於層疊絕緣層300之另側。散熱層150可包含金屬或合金。具體而言,若使用玻璃纖維樹脂作為基板100之材質,雖然此材質具有良好之硬度及剛性,但散熱性相較於金屬或合金較差,此時可再設置散熱層150,讓經由孔洞400中的導熱材料410傳導出來的熱經由散熱層150散至外界環境。在圖5所示之不同實施例中,複數個孔洞400係貫通導熱層500、層疊絕緣層300及基板100。具體而言,在此不同實施例中,電子元件600可設置於孔洞400上方,基板100使用玻璃纖維樹脂作為材質,而電子元件600產生之熱係直接由下方孔洞400中的導熱材料410傳導至散熱層150,並經由散熱層150散至外界環境。又如圖6所示之較佳實施例,複數個孔洞400可貫穿導熱層500、層疊絕緣層300、基板100及散熱層150。在此較佳實施例中,由於導熱材料410與散熱層150之接觸面積增加,亦即熱能由導熱材料410傳導至散熱層150之面積增加,故可進一步提升散熱基板800之散熱效率。In the different embodiments shown in FIG. 4, a plurality of holes 400 extend through the laminated insulating layer 300 and the substrate 100. The heat dissipation substrate 800 further includes a heat dissipation layer 150 disposed under the substrate 100, that is, on the other side of the substrate 100 with respect to the laminated insulation layer 300. The heat dissipation layer 150 may comprise a metal or an alloy. Specifically, if a glass fiber resin is used as the material of the substrate 100, although the material has good hardness and rigidity, the heat dissipation property is inferior to that of the metal or the alloy, and the heat dissipation layer 150 may be further disposed at the time through the hole 400. The heat conducted by the heat conductive material 410 is dissipated to the external environment via the heat dissipation layer 150. In the different embodiments illustrated in FIG. 5, a plurality of holes 400 extend through the thermally conductive layer 500, the laminated insulating layer 300, and the substrate 100. Specifically, in different embodiments, the electronic component 600 can be disposed over the hole 400. The substrate 100 uses a fiberglass resin as a material, and the heat generated by the electronic component 600 is directly conducted by the heat conductive material 410 in the lower hole 400. The heat dissipation layer 150 is dispersed to the external environment via the heat dissipation layer 150. As shown in the preferred embodiment of FIG. 6, a plurality of holes 400 may extend through the thermally conductive layer 500, the laminated insulating layer 300, the substrate 100, and the heat dissipation layer 150. In the preferred embodiment, since the contact area of the heat conductive material 410 and the heat dissipation layer 150 is increased, that is, the area where the heat energy is conducted from the heat conductive material 410 to the heat dissipation layer 150 is increased, the heat dissipation efficiency of the heat dissipation substrate 800 can be further improved.
如圖7所示,在不同實施例中,層疊絕緣層300可直接由聚醯亞胺構成。具體而言,相較於習知散熱基板之絕緣層之厚度須大於1mm以達成足夠高之崩潰電壓,使用聚醯亞胺作為層疊絕緣層300之材質,在厚度小於100μm時,層疊絕緣層300之崩潰電壓仍大於1kV。亦即,使用聚醯亞胺可大幅減少層疊絕緣層300之厚度。在如圖8所示之不同實施例中,可進一步設置散熱層150於基板100相對於聚醯亞胺層300之另側,其中複數個孔洞400貫穿導熱層500、聚醯亞胺層300、基板100及散熱層150。As shown in FIG. 7, in various embodiments, the laminated insulating layer 300 may be composed directly of polyimide. Specifically, the thickness of the insulating layer of the conventional heat-dissipating substrate must be greater than 1 mm to achieve a sufficiently high breakdown voltage, and polyimide is used as the material of the laminated insulating layer 300, and when the thickness is less than 100 μm, the insulating layer 300 is laminated. The breakdown voltage is still greater than 1kV. That is, the thickness of the laminated insulating layer 300 can be greatly reduced by using polyimide. In a different embodiment, as shown in FIG. 8 , a heat dissipation layer 150 may be further disposed on the other side of the substrate 100 relative to the polyimide layer 300 , wherein the plurality of holes 400 extend through the heat conduction layer 500 , the polyimide layer 300 , The substrate 100 and the heat dissipation layer 150.
雖然前述的描述及圖式已揭示本發明之較佳實施例,必須瞭解到各種增添、許多修改和取代可能使用於本發明較佳實施例,而不會脫離如所附申請專利範圍所界定的本發明原理之精神及範圍。熟悉本發明所屬技術領域之一般技藝者將可體會,本發明可使用於許多形式、結構、佈置、比例、材料、元件和組件的修改。因此,本文於此所揭示的實施例應被視為用以說明本發明,而非用以限制本發明。本發明的範圍應由後附申請專利範圍所界定,並涵蓋其合法均等物,並不限於先前的描述。While the foregoing description of the preferred embodiments of the invention, the embodiments of the invention The spirit and scope of the principles of the invention. Modifications of many forms, structures, arrangements, ratios, materials, components and components can be made by those skilled in the art to which the invention pertains. Therefore, the embodiments disclosed herein are to be considered as illustrative and not restrictive. The scope of the present invention is defined by the scope of the appended claims, and the legal equivalents thereof are not limited to the foregoing description.
10...金屬基板10. . . Metal substrate
30...絕緣層30. . . Insulation
50...銅箔層50. . . Copper foil layer
80...習知散熱基板80. . . Conventional heat sink substrate
100...基板100. . . Substrate
150...散熱層150. . . Heat sink
300...層疊絕緣層300. . . Laminated insulation
310...絕緣層310. . . Insulation
400...孔洞400. . . Hole
410...導熱材料410. . . Thermal material
500...導熱層500. . . Thermal layer
600...電子元件600. . . Electronic component
800...散熱基板800. . . Heat sink substrate
圖1為習知技術示意圖;Figure 1 is a schematic view of a conventional technique;
圖2至圖5為本發明不同實施例示意圖;2 to 5 are schematic views of different embodiments of the present invention;
圖6為本發明較佳實施例示意圖;以及Figure 6 is a schematic view of a preferred embodiment of the present invention;
圖7及圖8為本發明不同實施例示意圖。7 and 8 are schematic views of different embodiments of the present invention.
100...基板100. . . Substrate
150...散熱層150. . . Heat sink
300...層疊絕緣層300. . . Laminated insulation
310...絕緣層310. . . Insulation
400...孔洞400. . . Hole
410...導熱材料410. . . Thermal material
500...導熱層500. . . Thermal layer
800...散熱基板800. . . Heat sink substrate
Claims (12)
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TWM311116U (en) * | 2006-10-14 | 2007-05-01 | Gia Tzoong Entpr Co Ltd | Improved PCB structure of LED carrier |
TW200911098A (en) * | 2007-08-27 | 2009-03-01 | Kinsus Interconnect Tech Corp | Double-faced soft board with heat conductive design |
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TWM311116U (en) * | 2006-10-14 | 2007-05-01 | Gia Tzoong Entpr Co Ltd | Improved PCB structure of LED carrier |
TW200911098A (en) * | 2007-08-27 | 2009-03-01 | Kinsus Interconnect Tech Corp | Double-faced soft board with heat conductive design |
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