TWI406441B - White-emitting organic light emitting diode (oled) structure - Google Patents

Abstract

A white-emitting OLED structure includes a hole-transporting layer, at least one blue emission layer, a plurality of hole-blocking layers, at least one red emission layer and an electron-transporting layer. The hole-transporting layer, blue emission layer, hole-blocking layers, red emission layer and electron-transporting layer are formed with an energy band which includes at least one quantum-well-like structure. The quantum-well-like structure is capable of enhancing the emission efficiency of the white-emitting OLED structure.

Description

White light organic light emitting diode structure

The present invention relates to a white light organic light emitting diode structure; in particular, to a white light organic light emitting diode structure forming an energy level having at least one quantum-well-like structure. QWL structure].

In general, an organic light emitting diode (OLED) can be widely applied to a flat panel display (FPD) having an emission electroluminescence layer, which emits an electroluminescence layer. The luminescent layer has an organic compound material which is available for illuminating when a suitable current is applied.

In application, the organic light-emitting diode has the advantages of high luminance efficiency and low power consumption, and thus has the advantages of high brightness and power saving; in addition, the organic light-emitting diode It has a light, full color, wide viewing angle and high response speed, and its display speed only takes a few microseconds. Furthermore, the advantages of the organic light-emitting diode itself include flexibility and ease of manufacture. The most important advantage is that the organic light-emitting diode does not require a backlighting member. Therefore, organic light-emitting diodes have a high degree of potential applications, and in particular, white light organic light-emitting diodes have a high potential use.

The basic structure of the organic light-emitting diode mainly comprises a hole-transporting layer (HTL), an emissive layer (EL) and an electron-transporting layer (ETL). In an organic light-emitting diode, a hole is injected from the anode and electrons are injected from the cathode. When a hole is combined with an electron in the luminescent layer, the released energy is generated in the expected area. Excitation light. In fact, organic light-emitting diodes need to balance the conduction of holes and electrons in order to generate excited photons in the desired area.

The carrier transport characteristics of the organic light-emitting diode affect the position of the exciton formation zone, the recombination process, and the electroluminescence (EL) characteristics. Therefore, the energy level and carrier mobility of the organic light-emitting diode material are the main considerations for the production of organic light-emitting diodes. In addition, the structure of the organic light-emitting diode and the guest doping are mainly used to modify the photophysical properties and electronic properties of the host light emitter.

The white light organic light emitting diode technology is only disclosed in some patents. For example, the new patent of "Two-wavelength light type white light organic light-emitting diode" of the Republic of China Patent Publication No. 556968 discloses a white light organic light-emitting diode comprising an electron transport layer, a hole barrier layer, and a a red/blue light emitting layer (light emitting layer), a hole transmitting layer, and a light enhancing layer or a light attenuating layer, the light enhancing layer or the light attenuating layer being located on one side of the red/blue light emitting layer [light emitting layer] The luminescence intensity of red light and blue light is equivalent to emit white light with better color purity. The light enhancement layer or light attenuating layer has a quantum well structure in which a Bragg reflector is formed in the organic light emitting diode to enhance or attenuate the red/blue light emitting layer. The foregoing patents are only for the purpose of reference to the present invention, and are not intended to limit the scope of the present invention.

Therefore, the conventional white light organic light-emitting diode still needs to further improve its light-emitting characteristics to enhance its light-emitting brightness or light-emitting stability. Therefore, in addition to the appropriate activation of the dopant mode dopant fluorescent material, the white organic light-emitting diode can also use other technical means to improve its luminescent properties to meet the aforementioned potential needs.

In view of the above, in order to meet the above needs, the present invention provides a white organic light emitting diode structure that forms an energy band having at least one type of energy band. The sub-well structure, the quantum well structure can enhance the luminescence characteristics of the organic light-emitting diode structure to achieve the purpose of gain luminous efficiency and improving luminescent characteristics.

The main object of the present invention is to provide a white light organic light emitting diode structure, which forms an energy band having at least one type of quantum well structure, which can enhance the light emitting characteristics of the organic light emitting diode structure. In order to achieve the benefits of gain luminous efficiency and improved luminescent properties.

In order to achieve the above object, the white light organic light emitting diode structure of the present invention comprises a hole transport layer, at least one blue light emitting layer, a plurality of hole blocking layers, at least one red light emitting layer and an electron transport layer. The hole transport layer, the blue light emitting layer, the hole blocking layer, the red light emitting layer and the electron transport layer form an energy band, and the energy band has at least one type of quantum well structure, and the quantum well structure can gain the organic light emitting The luminescent properties of the polar body structure.

The quantum well structure of the preferred embodiment of the present invention is formed by the arrangement of the blue light emitting layer, the hole blocking layer and the red light emitting layer, and the quantum well structure is located in the two barrier layers. between.

The quantum well structure of the preferred embodiment of the present invention is formed by the arrangement of the blue light emitting layer, the hole blocking layer and the red light emitting layer, and the quantum well structure is located between the two blue light emitting layers.

The hole transport layer of the preferred embodiment of the present invention is: NPB

[N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine] material.

In a preferred embodiment of the invention, the blue light-emitting layer comprises a blue light-emitting material selected from the group consisting of TBADN [3-tert-butyl-9, 10-di (naphth-2-yl) anthracene].

The blue light emitting layer of the preferred embodiment of the present invention comprises a blue light emitting dye The blue light-emitting dye is doped to the blue light-emitting dye, and the blue light-emitting dye is selected from the group consisting of: BCzVB [1,4-bis[2-(3-N-ethylcarbazoryl)vinyl]benzene].

The hole barrier layer of the preferred embodiment of the present invention is made of BCP [2,9-dimethyl-4,7-diphenyl-1,10-phenanhroline] material.

The red light emitting layer of the preferred embodiment of the present invention comprises a red light emitting material selected from the group consisting of: Alq ₃ [Tris-(8-hydroxyquinolinato)-aluminum] material.

In a preferred embodiment of the present invention, the red light emitting layer comprises a red light emitting dye, and the red light emitting dye is doped to the red light emitting material, and the red light emitting dye is selected from the group consisting of: DCJTB

[4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidin-4-ylvinyl)-4H-pyran].

The electron transport layer of the preferred embodiment of the present invention is made of Alq ₃ [Tris-(8-hydroxyquinolinato)-aluminum] material.

The white organic light emitting diode structure of the preferred embodiment of the present invention further comprises an electron injecting layer.

The electron injecting layer of the preferred embodiment of the present invention is made of a lithium fluoride [LiF] material.

In order to fully understand the present invention, the preferred embodiments of the present invention are described in detail below and are not intended to limit the invention.

The white light organic light emitting diode structure of the preferred embodiment of the present invention can be widely used. It is applied to a flat panel display or its related art, and the related art is within the scope of the spirit and technical field of the present invention.

FIG. 1 is a schematic view showing the structure of a white organic light emitting diode according to a first preferred embodiment of the present invention. Referring to FIG. 1, the white organic light-emitting diode of the first preferred embodiment of the present invention is disposed on a glass substrate 10, but it is not intended to limit the present invention. In addition, the glass substrate 10 has an indium tin oxide (ITO) coated material to form an ITO substrate layer 11 or other transparent conductive oxide (TCO) material. However, it is not intended to limit the invention. The ITO substrate layer 11 of the first preferred embodiment of the present invention is used as an anode of an organic light emitting diode, but it is not intended to limit the present invention. In addition, the white organic light-emitting diode structure of the first preferred embodiment of the present invention has an aluminum metal layer 18 as a cathode of the organic light-emitting diode, but it is not intended to limit the present invention.

Referring to FIG. 1 again, the white light organic light emitting diode structure of the first preferred embodiment of the present invention comprises a hole transport layer 12, a blue light emitting layer 13, a first hole barrier layer 141, and a a red light emitting layer 15, a second hole blocking layer 142, an electron transporting layer 16, and an electron injecting layer 17, which are sequentially arranged in the ITO substrate layer 11 (anode) and the aluminum metal layer 18 (cathode) between.

Referring to FIG. 1 again, the ITO substrate layer 11, the hole transport layer 12, the blue light emitting layer 13, the first hole barrier layer 141, and the red light emitting layer 15 of the first preferred embodiment of the present invention are The second hole barrier layer 142, the electron transport layer 16 and the electron injection layer 17 are preferably formed by physical vapor deposition (PVD), for example, thermal evaporation, co-evaporation. [co-evaporation].

Referring to FIG. 1 again, the ITO substrate layer 11 can be bonded to one side of the hole transport layer 12. The blue light emitting layer 13 , the first hole blocking layer 141 , the red light emitting layer 15 , and the second hole blocking layer 142 are located in the hole transport layer 12 and Between the electron transport layers 16. Furthermore, the first hole barrier layer 141 is located between the blue light emitting layer 13 and the red light emitting layer 15; the second hole blocking layer 142 is located between the red light emitting layer 15 and the electron transport layer 16 .

Referring again to FIG. 1, the hole transport layer 12 is made of NPB[N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine] material and has a thickness of about 50 nm. However, it is not intended to limit the invention. The blue light emitting layer 13 of the first preferred embodiment of the present invention has a thickness of about 40 nm and comprises a blue main light emitting material selected from the group consisting of TBADN [3-tert-butyl-9, 10-di (naphth). -2-yl) anthracene] material. The blue light emitting layer 13 comprises a blue light emitting dye doped with the blue light emitting dye, the blue light emitting dye being selected from the group consisting of: BCzVB [1,4-bis[2-(3-N-ethylcarbazoryl)vinyl] Benzene material, but it is not intended to limit the invention.

Referring to FIG. 1 again, the first hole barrier layer 141 and the second hole barrier layer 142 of the first preferred embodiment of the present invention are: BCP[2,9-dimethyl-4,7 Made of a -diphenyl-1,10-phenanhroline material, the second hole barrier layer 142 has a thickness of about 15 nm, but it is not intended to limit the invention.

Referring to FIG. 1 again, the red light emitting layer 15 of the first preferred embodiment of the present invention has a thickness of about 30 nm and comprises a red light emitting material selected from the group consisting of: Alq ₃ [Tris-(8). a red light-emitting layer 15 comprising a red light-emitting dye doped with the red light-emitting dye, the red light-emitting dye being selected from the group consisting of: DCJTB [4-(dicyanomethylene) -2-tert-butyl-6-(1,1,7,7-tetramethyljulolidin-4-ylvinyl)-4H-pyran] material, but it is not intended to limit the invention.

Referring to FIG. 1 again, the electron transport layer 16 of the first preferred embodiment of the present invention is made of an Alq ₃ [Tris-(8-hydroxyquinolinato)-aluminum] material having a thickness of about 10 nm, but It is not intended to limit the invention. The electron injecting layer 17 of the first preferred embodiment of the present invention is made of a lithium fluoride [LiF] material having a thickness of about 10 nm, but it is not intended to limit the present invention.

Fig. 2 is a view showing the distribution of the energy band of the white organic light-emitting diode structure of the first preferred embodiment of the present invention. Referring to FIGS. 1 and 2, the ITO substrate layer 11, the hole transport layer 12, the blue light emitting layer 13, the first hole barrier layer 141, the red light emitting layer 15, and the second hole barrier layer 142. The electron transport layer 16 and the electron injection layer 17 form an energy band as shown in FIG.

Referring again to FIG. 2, the energy band has at least one type of quantum well structure (as indicated by the arrow below in FIG. 2), and the quantum well structure can enhance the luminescent properties of the organic light emitting diode structure. Referring to FIG. 1 again, the quantum well structure is located between the first hole barrier layer 141 and the second hole barrier layer 142, and the gain efficiency is combined with the hole, that is, the carrier is improved. Capture-trapping probability.

3 is a graph showing the relationship between luminance and voltage and the electroluminescence intensity of the white light organic light-emitting diode structure of the first preferred embodiment of the present invention at various thicknesses of the hole barrier layer. A graph of the relationship with wavelength. Referring to FIGS. 1 and 3, the second hole barrier layer 142 has a thickness of 15 nm, and the first hole barrier layer 141 has a thickness of 0 nm (labeled as device 1), 1 nm, and 3 nm, respectively. 5nm. With the increase of the thickness of the second hole 142 of the barrier layer, which increases the maximum brightness 3760cd / m ² to 6950cd / m ^2. Meanwhile, the maximum luminous intensity of the first hole barrier layer 141 is 1950 cd/m ² , 6130 cd/m ² , and 5160 cd/m ² at a thickness of 1 nm, 3 nm, and 5 nm, respectively.

Referring to FIGS. 1 and 3 again, when the thickness of the first hole barrier layer 141 is 15 nm, and the thickness of the second hole barrier layer 142 is 1 nm, 3 nm, and 5 nm, respectively, the CIE color is obtained. The coordinates are [0.36, 0.33], [0.33, 0.32], [0.32, 0.30].

Figure 4 is a view showing a white organic light emitting diode of the first preferred embodiment of the present invention. The body structure produces a graph of brightness versus voltage and a plot of electroluminescence intensity versus wavelength. The first preferred embodiment of the present invention is labeled as device 3 in Fig. 4, the curve of which is shown by the arrow in Fig. 4.

Fig. 5 is a graph showing the relationship between the electroluminescence efficiency and the voltage of the white organic light-emitting diode structure of the first preferred embodiment of the present invention. In Fig. 5, the first preferred embodiment of the present invention is denoted as device 3, and its curve is shown by a triangular symbol in Fig. 4.

Referring to FIGS. 4 and 5, the white light organic light emitting diode structure (labeled as device 3) of the first preferred embodiment of the present invention utilizes the first hole barrier layer 141 and the second hole barrier layer. A quantum well structure such as 142 achieves better brightness and electroluminescence efficiency.

FIG. 6 is a schematic view showing the structure of a white organic light emitting diode according to a second preferred embodiment of the present invention. Referring to FIG. 6, the white organic light-emitting diode structure of the second preferred embodiment of the present invention is disposed on a glass substrate 10. The white organic light emitting diode structure of the second preferred embodiment of the present invention has an ITO substrate layer 11 and an aluminum metal layer 18 as an anode of the organic light emitting diode, and the aluminum metal layer 18 As the cathode of the organic light-emitting diode.

Referring to FIG. 6 again, the white light organic light emitting diode structure of the second preferred embodiment of the present invention comprises a hole transport layer 12, a first blue light emitting layer 131, and a first hole blocking layer 141. a first red light emitting layer 151, a second blue light emitting layer 132, a second hole blocking layer 142, a second red light emitting layer 152, a third blue light emitting layer 133, and a third hole The barrier layer 143, a third red light emitting layer 153, an electron transport layer 16 and an electron injecting layer 17 are sequentially arranged between the ITO substrate layer 11 (anode) and the aluminum metal layer 18 (cathode).

The white light organic light emitting diode structure (shown in FIG. 1 ) with respect to the first preferred embodiment of the present invention has a blue light emitting layer 13 , a first hole blocking layer 141 , a red light emitting layer 15 , and a second electricity Hole barrier layer 142, the second preferred embodiment of the present invention The white light organic light emitting diode structure of the embodiment (as shown in FIG. 6) has the first blue light emitting layer 131, the first hole blocking layer 141, the first red light emitting layer 151, and the second blue light emitting layer 132. a second hole blocking layer 142, a second red light emitting layer 152, a third blue light emitting layer 133, a third hole blocking layer 143, and a third red light emitting layer 153, each of which corresponds to the present invention A preferred embodiment is not described in detail herein.

Referring to FIG. 6, the thickness of the first blue light emitting layer 131, the second blue light emitting layer 132, and the third blue light emitting layer 133 of the second preferred embodiment of the present invention is about 13 nm, but it is not limited. this invention. The thickness of the first hole barrier layer 141, the second hole barrier layer 142, and the third hole barrier layer 143 of the second preferred embodiment of the present invention is between about 1 nm and 3 nm, but it is not used. Limit the invention. The thickness of the first red light emitting layer 151, the second red light emitting layer 152, and the third red light emitting layer 153 in the second preferred embodiment of the present invention is about 10 nm, but it is not intended to limit the present invention.

Referring to FIG. 6 again, in the same manner as the first preferred embodiment of the present invention, the hole transport layer 12 of the second preferred embodiment is made of NPB[N,N'-di(naphthalene-1-yl). -N,N'-diphenyl-benzidine] material having a thickness of about 50 nm, but it is not intended to limit the present invention; the electron transport layer 16 of the second preferred embodiment of the present invention is composed of: Alq ₃ [Tris- (8-hydroxyquinolinato)-aluminum] material having a thickness of about 10 nm, but it is not intended to limit the present invention; the electron injecting layer 17 of the second preferred embodiment of the present invention is made of lithium fluoride [LiF] material. The thickness is about 10 nm, but it is not intended to limit the invention.

Fig. 7 is a view showing the distribution of the energy band of the white organic light-emitting diode structure of the second preferred embodiment of the present invention. Referring to FIGS. 6 and 7, the ITO substrate layer 11, the hole transport layer 12, the first blue light emitting layer 131, the first hole barrier layer 141, the first red light emitting layer 151, and the second blue light emitting light. The layer 132, the second hole barrier layer 142, the second red light emitting layer 152, the third blue light emitting layer 133, the third hole blocking layer 143, the third red light emitting layer 153, and the electron transport layer 16 and the electron injection layer 17 form an energy band as shown in FIG.

Referring again to Figure 7, the energy band has a plurality of quantum well structures (as indicated by the arrows above and below in Figure 7), and the quantum well structure can enhance the luminescent properties of the organic light emitting diode structure. . Referring to FIG. 6 again, the quantum well structure is located between the first blue light emitting layer 131 and the second blue light emitting layer 132, between the second blue light emitting layer 132 and the third blue light emitting layer 133, The first hole barrier layer 141 and the second hole barrier layer 142 are between the second hole barrier layer 142 and the third hole barrier layer 143.

Fig. 8 is a graph showing a relationship between luminance and voltage and a relationship between current density and voltage at various thicknesses of a hole barrier layer in a white light organic light-emitting diode structure according to a second preferred embodiment of the present invention. Referring to FIGS. 6 and 8, the first hole barrier layer 141, the second hole barrier layer 142, and the third hole barrier layer 143 have thicknesses of 0 nm, 1 nm, 2 nm, and 3 nm, respectively. When the first hole barrier layer 141, the thickness of the hole and the third electrical barrier layer 143 of the second barrier layer 142 is a hole of 0 nm, which is a current density of from 151mA / cm ² was increased to 561mA / cm ^2, and since the brightness 4650cd / cm ² increased to 30500cd / cm ^2, which is a graph of the arrows shown in FIG. 8. When the thickness of the first hole barrier layer 141, the second hole barrier layer 142, and the third hole barrier layer 143 is increased to 1 nm, the brightness thereof is increased to 37,700 cd/cm ² .

FIG. 9 is a view showing the relationship between the electroluminescence efficiency and the voltage and the relationship between the electroluminescence efficiency and the brightness of the white light organic light-emitting diode structure according to the second preferred embodiment of the present invention at various thicknesses of the hole barrier layer. Graph. Referring to FIGS. 6 and 9, the thickness of the first hole barrier layer 141, the second hole barrier layer 142, and the third hole barrier layer 143 are respectively 0 nm (the ninth icon shows a square symbol) Curve], 1 nm [the 9th icon shows the curve of the circular symbol], 2 nm [the 9th icon shows the curve of the triangle symbol], 3 nm [the 9th icon shows the curve of the inverted triangle symbol], wherein the first hole barrier layer 141. The thickness of the second hole barrier layer 142 and the third hole barrier layer 143 is preferably 2 nm.

Referring to FIG. 9 again, when the thicknesses of the first hole barrier layer 141, the second hole barrier layer 142, and the third hole barrier layer 143 are respectively 0 nm, the stable luminous intensity is from 677 cd. /cm ^{2 is} increased to 33600 cd/cm ² .

Figure 10 is a graph showing the relationship between the electroluminescence intensity and the wavelength at various thicknesses of the hole barrier layer of the white organic light-emitting diode structure of the second preferred embodiment of the present invention. Referring to FIGS. 6, 8, and 10, the thickness of the first hole barrier layer 141, the second hole barrier layer 142, and the third hole barrier layer 143 are 0 nm, 1 nm, and 2 nm, respectively. At 3 nm, the maximum luminescence intensity was 30,500 cd/cm ² , 37,700 cd/cm ² , 33,600 cd/cm ² and 23,800 cd/cm ^{2 , respectively} .

Referring to FIGS. 6 and 10, the thickness of the first hole barrier layer 141, the second hole barrier layer 142, and the third hole barrier layer 143 are 0 nm, 1 nm, 2 nm, and 3 nm, respectively. The CIE color coordinates are [0.49, 0.38], [0.44, 0.38], [0.32, 0.32], [0.27, 0.26], respectively.

Referring to FIGS. 6, 8, 9, and 10, when the thickness of the first hole barrier layer 141, the second hole barrier layer 142, and the third hole barrier layer 143 is 2 nm, The maximum luminous intensity was 33,600 cd/cm ² [at 13 V], and its CIE color coordinate was [0.32, 0.32].

Figure 11 is a graph showing the relationship between the electroluminescence intensity and the wavelength at various operating current densities of the white organic light-emitting diode structure of the second preferred embodiment of the present invention. Please refer to Figure 11. When the operating voltage values are 7V, 8 V, 9 V, 10 V, 11 V, 12 V and 13 V, the operating current densities are 5.01 mA/cm ² and 10.5 mA/ respectively. Cm ² , 20.3 mA/cm ² , 40.3 mA/cm ² , 84.4 mA/cm ² , 194 mA/cm ² and 488 mA/cm ² , and their CIE color coordinates are [0.36, 0.34], [0.35, 0.34, respectively. ], [0.34, 0.33], [0.33, 0.33] and [0.32, 0.32].

The above experimental data is preliminary experimental results obtained under specific conditions, which are only used to easily understand or refer to the technical content of the present invention, and other experiments are still required. The experimental data and its results are not intended to limit the invention. Benefit range.

The foregoing preferred embodiments are merely illustrative of the invention and the technical features thereof, and the techniques of the embodiments can be carried out with various substantial equivalent modifications and/or alternatives; therefore, the scope of the invention is subject to the appended claims. The scope defined by the scope shall prevail.

10‧‧‧ glass substrate

11‧‧‧ITO substrate layer

12‧‧‧ hole transport layer

13‧‧‧Blue light emitting layer

131‧‧‧First blue light emitting layer

132‧‧‧Second blue light emitting layer

133‧‧‧ Third blue light emitting layer

141‧‧‧First hole barrier

142‧‧‧Second hole barrier

143‧‧‧ Third hole barrier

15‧‧‧Red light emitting layer

151‧‧‧First red light emitting layer

152‧‧‧Second red light emitting layer

153‧‧‧ Third red light emitting layer

16‧‧‧Electronic transport layer

17‧‧‧Electronic injection layer

18‧‧‧Aluminum metal layer

FIG. 1 is a schematic view showing the structure of a white organic light emitting diode according to a first preferred embodiment of the present invention.

Fig. 2 is a schematic view showing the distribution of the energy band of the white organic light-emitting diode structure of the first preferred embodiment of the present invention.

Fig. 3 is a graph showing the relationship between luminance and voltage and the relationship between electroluminescence intensity and wavelength at various thicknesses of the barrier layer of the white light-emitting organic light-emitting diode according to the first preferred embodiment of the present invention.

Fig. 4 is a graph showing the relationship between luminance and voltage and the relationship between electroluminescence intensity and wavelength in the white light organic light-emitting diode structure of the first preferred embodiment of the present invention.

Fig. 5 is a graph showing the relationship between the electroluminescence efficiency and the voltage of the white organic light-emitting diode structure of the first preferred embodiment of the present invention.

Figure 6 is a block diagram showing the structure of a white organic light-emitting diode according to a second preferred embodiment of the present invention.

Figure 7 is a schematic view showing the distribution of the energy band of the white organic light-emitting diode structure of the second preferred embodiment of the present invention.

Figure 8 is a graph showing the relationship between brightness and voltage and the relationship between current density and voltage at various thicknesses of the hole barrier layer in the white light organic light-emitting diode structure of the second preferred embodiment of the present invention.

Figure 9 is a graph showing the relationship between the electroluminescence efficiency and the voltage and the relationship between the electroluminescence efficiency and the brightness of the white light organic light-emitting diode structure according to the second preferred embodiment of the present invention at various thicknesses of the hole barrier layer. Graph.

Figure 10 is a graph showing the relationship between electroluminescence intensity and wavelength at various thicknesses of the barrier layer of the white light organic light emitting diode of the second preferred embodiment of the present invention.

Figure 11 is a graph showing the relationship between electroluminescence intensity and wavelength at various operating current densities for a white light organic light emitting diode construction in accordance with a second preferred embodiment of the present invention.

10‧‧‧ glass substrate

11‧‧‧ITO substrate layer

12‧‧‧ hole transport layer

13‧‧‧Blue light emitting layer

141‧‧‧First hole barrier

142‧‧‧Second hole barrier

15‧‧‧Red light emitting layer

16‧‧‧Electronic transport layer

17‧‧‧Electronic injection layer

18‧‧‧Aluminum metal layer

Claims (23)

A white light organic light emitting diode structure comprising: a hole transport layer; a blue light emitting layer; a first hole barrier layer; a red light emitting layer; a second hole blocking layer, the blue light emitting The layer, the first hole barrier layer, the red light emitting layer and the second hole barrier layer are located between the hole transport layer and the electron transport layer, and the first hole barrier layer is located in the blue light emitting layer and the red layer Between the light-emitting layers; and an electron transport layer, the second hole barrier layer is located between the red light-emitting layer and the electron transport layer; wherein the hole transport layer, the blue light-emitting layer, and the first hole barrier The layer, the red light emitting layer, the second hole blocking layer and the electron transport layer form an energy band, and the energy band has at least one type of quantum well structure, and the quantum well structure can enhance the light emission of the white organic light emitting diode structure characteristic. The white light organic light emitting diode structure according to claim 1, wherein the quantum well structure is located between the first hole barrier layer and the second hole barrier layer. A white light organic light emitting diode structure comprising: a hole transport layer; a first blue light emitting layer; a first hole blocking layer, the first blue light emitting layer is located in the hole transport layer and the first electricity Between the hole barrier layers; a first red light emitting layer, the first hole blocking layer is located between the first blue light emitting layer and the first red light emitting layer; and a second blue light emitting layer, the first a red light emitting layer is disposed between the first hole blocking layer and the second blue light emitting layer; a second hole blocking layer, the second blue light emitting layer is located in the first red light emitting layer and the second hole Between the barrier layers; a second red light emitting layer, the second hole blocking layer is located between the second blue light emitting layer and the second red light emitting layer; and an electron transport layer, the second red light emitting layer is located at the second Between the hole barrier layer and the electron transport layer; wherein the hole transport layer, the first blue light emitting layer, the first hole barrier layer, the first red light emitting layer, the second blue light emitting layer, and the second hole The barrier layer, the second red light emitting layer and the electron transport layer form an energy band having at least one type of quantum well structure, and the quantum well structure can enhance the light emitting characteristics of the organic light emitting diode structure. The white light organic light emitting diode structure according to claim 3, wherein the quantum well structure is located between the first hole barrier layer and the second hole barrier layer. The white light organic light emitting diode structure according to claim 3, wherein the quantum well structure is located between the first blue light emitting layer and the second blue light emitting layer. The white light organic light emitting diode structure according to claim 1, wherein the hole transport layer is made of NPB material. The white light organic light emitting diode structure according to claim 1, wherein the blue light emitting layer comprises a blue light emitting material selected from the group consisting of TBADN materials. The white light organic light emitting diode structure according to claim 7, wherein the blue light emitting layer comprises a blue light emitting dye, and the blue light emitting dye is doped to the blue light emitting material, and the blue light emitting dye is selected from the group consisting of BCzVB materials. . The white light organic light emitting diode structure according to claim 1, wherein the first hole barrier layer or the second hole barrier layer is made of a BCP material. The white light organic light emitting diode structure according to claim 1, wherein the red light emitting layer comprises a red light emitting material selected from the group consisting of Alq ₃ materials. The white light organic light emitting diode structure according to claim 10, wherein the red light emitting layer comprises a red light emitting dye, and the red light emitting dye is doped. The red light luminescent material is selected from the group consisting of DCJTB materials. The white light organic light emitting diode structure according to claim 1, wherein the electron transport layer is made of an Alq ₃ material. The white light organic light emitting diode structure according to claim 1, wherein the white light organic light emitting diode structure further comprises an electron injecting layer. The white light organic light emitting diode structure according to claim 13, wherein the electron injecting layer is made of a lithium fluoride [LiF] material. The white light organic light emitting diode structure according to claim 3, wherein the hole transport layer is made of NPB material. The white light organic light emitting diode structure of claim 3, wherein the first blue light emitting layer or the second blue light emitting layer comprises a blue light emitting material selected from the group consisting of TBADN materials. The white light organic light emitting diode structure according to claim 16, wherein the first blue light emitting layer or the second blue light emitting layer comprises a blue light emitting dye, and the blue light emitting dye is doped to the blue light emitting material. The blue light-emitting dye is selected from the group consisting of BCzVB materials. The white light organic light emitting diode structure according to claim 3, wherein the first hole barrier layer or the second hole barrier layer is made of a BCP material. The white light organic light emitting diode structure according to claim 3, wherein the first red light emitting layer or the second red light emitting layer comprises a red light emitting material selected from the group consisting of Alq ₃ materials. The white light organic light emitting diode structure according to claim 19, wherein the first red light emitting layer or the second red light emitting layer comprises a red light emitting dye, and the red light emitting dye is doped in the red A light luminescent material selected from the group consisting of DCJTB materials. The white light organic light emitting diode structure according to claim 3, wherein the electron transport layer is made of an Alq ₃ material. The white light organic light emitting diode structure according to claim 3, wherein the white light organic light emitting diode structure further comprises an electron injecting layer. According to the white light organic light-emitting diode structure described in claim 22 of the patent application scope, The electron injecting layer is made of a lithium fluoride [LiF] material.