1311031 八A案/有化學式時，請揭示最_示發__ 化學式： 九、發明說明： 【發明所屬之技術領域】 本發明係關於—種有機發光二極體裝置及其製 造方法’制是«於導電層與發絲職有極低電 洞注入能ρ：ί，更佳者為*具有電瓶人能障，使電洞 能不受阻礙的傳遞。 【先前技術】 有機：電激發光顯示器（Organic Electroluminescence Display， Organic EL Display) 又稱為有 機發光一極體（Organic Light Emitting Diode, OLED) 是在1987年由柯達(Kodak)公司的C. W. Tang與s. A. VanSlyk等人’率先使用真空蒸鍍方式製成，分別將 電洞傳輸材料及電子傳輸材料，鍍覆於透明之氧化銦 錫(indium tin oxide，簡稱ITO)玻璃上，其後再蒸鍍一 金屬電極形成具有自發光性之OLED裝置，由於擁有 咼亮度、螢幕反應速度快、輕薄短小、全彩、無視角 差、不需液晶顯示器式背光板以及節省燈源及耗電 直’因而成為新一代顯示器。 請參閱第一圖，其係依據習知之一 OLED裝置之 1311031 結構剖面圖。在此實施例中，OLED裝置的構造由下 至上依序包含一透明基板11、一透明之陽極12 (Indium Tin Oxide，IT0)、電洞傳輸層 13 (Hole Transporting Layer，HTL)、一有機發光層 i4 ( 〇rganic Emitting Layer，EL )、一電子傳輸層 15 (Electron1311031 八A Case / When there is a chemical formula, please disclose the most _ _ __ Chemical formula: IX. Description of the invention: [Technical field of the invention] The present invention relates to an organic light-emitting diode device and a method of manufacturing the same «In the conductive layer and the hairline, there is a very low hole injection energy ρ: ί, and the better one is * has a battery human energy barrier, so that the hole can be transmitted without hindrance. [Prior Art] Organic Electroluminescence Display (Organic Electroluminescence Display) is also known as the Organic Light Emitting Diode (OLED) in 1987 by Kodak's CW Tang and s. A. VanSlyk et al. 'first made vacuum evaporation method, respectively, the hole transmission material and electron transport material were plated on transparent indium tin oxide (ITO) glass, and then steamed. Plating a metal electrode to form a self-luminous OLED device, because of its brightness, fast screen response, light and thin, full color, no viewing angle difference, no need for liquid crystal display backlight, and saving light source and power consumption Become a new generation of displays. Please refer to the first figure, which is a cross-sectional view of a 1311031 structure of an OLED device according to one of the conventional ones. In this embodiment, the OLED device is configured to include a transparent substrate 11 , an indium tin Oxide (IT0), a hole transport layer (HTL), and an organic light emission from bottom to top. Layer i4 ( 〇rganic Emitting Layer, EL ), an electron transport layer 15 (Electron
Transporting Layer, ETL )、一電子注入層 16 ( ElectronTransporting Layer, ETL), an electron injection layer 16 ( Electron
Injection Layer, EIL)及一金屬陰極π。當施以一順 向偏壓電壓時，電洞131由陽極12注入，而電子151 由陰極17注入，由於外加電場所造成的電位差，使 電子151及電洞131在薄膜中移動’進而在有機發光 層14中產生覆合（recombination)。部分由電子電洞 結合所釋放的能量，將有機發光層14的發光> + ^ 發而成為激發態，當發光分子由激發態衰變至基，離、 時’其中一定比例的能量以光子的形式放出，所放出 的光為有機電致發光。 請參閱第二圖，其係依據習知之另一 OLED裝置 之結構剖面圖，此結構由柯達(Kodak)公司的c w Tang於1982年在美國專利第4,356,429號中已敘述此 OLED裝置。在此實施例中，OLED裝置的構造由下 至上依序包含一透明基板21、一透明之陽極22、一 電洞注入層23、一發光層24及一金屬陰極25。當施 以一順向偏壓電壓時，電洞由陽極22注入，而電子 由陰極25注入，由於外加電場所造成的電位差，使 電子及電洞在薄膜中移動，進而在發光層24中產生 5 1311031 覆合。部分由電子電洞結合所釋放的能量，將發光層 24的發光分子激發而成為激發態，當發光分子由激發 態衰變至基態時，其中一定比例的能量以光子的形式 放出，所放出的光為有機電致發光。 請參閱第三圖，亦為習知之OLED裝置結構剖面 圖，此結構由柯達(Kodak)公司的C. W. Tang於1988 年提出在美國專利第4,720,432號。在此實施例中， OLED裝置的構造由下至上依序包含一透明基板31、 一透明之陽極32、一電洞注入層33、一具電子傳輸 功能之發光層34及一金屬陰極35。當施以一順向偏 壓電壓時，電洞由陽極32注入，而電子由陰極35注 入，由於外加電場所造成的電位差，使電子及電洞在 薄膜中移動，進而在發光層34中產生覆合。部分由 電子電洞結合所釋放的能量，將發光層34的發光分 子激發而成為激發態，當發光分子由激發態衰變至基 態時，其中一定比例的能量以光子的形式放出，所放 出的光為有機電致發光。 請參閱第四圖，係為習知之OLED裝置，此結構 是由Saito等人於1992年，在美國專利第5,085,946 號中提出，此OLED裝置之構造由下至上依序包含一 透明基板41、一透明之陽極42、一電洞傳輸層43、 一具備電子傳輸功能之發光層44及一金屬陰極45， 可產生有機電致發光。 6 1311031 請參閱弟五圖’亦為Saito等人於美國專利第 5,085,947號所提出OLED裝置結構，此〇LED裝置 之構造由下至上依序包含一透明基板51、一透明之陽 極52、一具備電洞傳輸功能之發光層53、一電子傳 輸層54及一金屬陰極55 ’亦可產生有機電致發光。 請參閱第六圖，為Saito等人於Chemical Physics Letters第178卷，第488頁（1991)中提出之三層結構 0LED裝置，此0LED裴置之構造由下至上依序包含 一透明基板6卜一透明之陽極62、一電洞傳輸層63、 一發光層64、一電子傳輸層65及一金屬陰極66，亦 可產生有機電致發光。Kido於Applied Physics Letters 第61卷，第761頁（1992)再修改此結構，稱之為幽禁 式結構，差別在於將發光層以幽禁層取代’若其幽禁 層厚度控制得宜，可獲得混合光源之白光。 本發明人基於多年從事研究與諸多實務經驗，經 多方研究設計與專題探討，遂於本發明提出—種有機 發光二極體裝置及其製造方法以作為前述期望一實 現方式與依據。 7 1311031 【發明内容】 有鑑於上述課題，本發明之目的為提供一種有機 發光二極體裝置及其製造方法，特別是有關於導電層 與發光層間具有極低電洞注入能障，更佳者為不具有 電洞注入能障，使電洞能不受阻礙的傳遞。 緣是，為達上述目的，依本發明之有機發光二極 體裝置，其包含有一基板、一第一導電層、一發光層、 一電子傳輸層、一電子注入層及一第二導電層，其 中，第一導電層位於基板上，發光層位於第一導電層 上方，電子傳輸層位於發光層上方，電子注入層位於 電子傳輸層上方，及第二導電層位於電子注入層上 方，且第一導電層與發光層間具有小於0.2電子伏特之 電洞注入能障，更佳者為不具有電洞注入能隙，使電 洞於第一導電層與發光層間能不受阻礙的傳遞。 承上所述，因依本發明之有機發光二極體裝置及 其製造方法，利用導電層與發光層間能隙較低、或不 具有能隙，而產生具有較佳之發光效能的OLED，同 時因為不需要加鍍電洞注入或傳輸材料層，而兼顧了 降低製造成本的要求。 茲為使貴審查委員對本發明之技術特徵及所 達成之功效有更進一步之瞭解與認識，下文謹提供較 佳之實施例及相關圖式以為輔佐之用，並以詳細之說 明文字配合說明如後。 8 1311031 【實施方式】 /為讓本發明之上述目的、特徵、和優點能更明顯 易懂，下文依本發明之有機發光二極體裝置及其製造 f法特舉較佳實施例’並配合所附相關圖式，作詳細 &月如下’其中相同的元件將以相同的元件符號加以 說明。 睛參閱第七圖，其係本發明之較佳實施例之 〇LED裝置之結構剖面圖。在此實施例中’ 〇L；ED f 置的構造由下至上依序包含一基板71、一第一導電層 I光層73、一電子傳輸層74、一電子注入層 75及一第二導電層76。其中，第一導電層72位於基 板71上，發光層73位於第一導電層72上方，電子 傳輸層74位於發光層73上方，電子注入層75位於 電子傳輸層74上方，及第二導電層76位於電子注入 =75上方，且第一導電層72與發光層73間具有極低 電洞注入能障，更佳者為不具有電洞注入能障，使電 洞於第一導電層72與發光層73間能不受阻礙的傳遞。 承上所述，發光層73係具有一螢光發光材料、或 一磷光發光材料，或兩者兼具，藉以使發光層73發光， 同時電子傳輸層74 —般可為 benzimidazol-2-yl)benzene (TPBi) > tris(8-hydroxyqUino-line)aluminum(Alq3)等電子傳輸材料；電子注入層75 般可為lithium fluoride (LiF)等電子注入材料；第二 9 Ι31Ϊ031 導電層76 —般可為A1等導電材料；基板71 —般可 為玻璃基板、塑膠基板或金屬基板；第一導電層72 一般可為氧化銦錫（indium tin oxide, ITO)層或氧化 銦鋅（indium zinc oxide，IZO)層。 請參閱第八圖，其係本發明之較佳實施例之 〇led裝置之能階圖。由圖中可知本發明之發光層， 如：藍光DPASN與第一導電層ITO間其能階(H〇M〇) 白為5.2eV ’因此不具有電洞注入能障，而使電洞於第 一導電層ITO與發光層0DPASN)間能夠不受阻礙的傳 遞。Injection Layer, EIL) and a metal cathode π. When a forward bias voltage is applied, the hole 131 is injected by the anode 12, and the electron 151 is injected by the cathode 17, causing the electron 151 and the hole 131 to move in the film due to the potential difference caused by the applied electric field. Recombination occurs in the light-emitting layer 14. Part of the energy released by the electron hole combination causes the luminescence of the organic luminescent layer 14 to become an excited state, and when the luminescent molecule decays from the excited state to the base, when a certain proportion of the energy is photon The form is released, and the emitted light is organic electroluminescence. Referring to the second embodiment, which is a cross-sectional view of another OLED device according to the prior art, the OLED device is described in U.S. Patent No. 4,356,429, issued toK. In this embodiment, the OLED device is constructed to include a transparent substrate 21, a transparent anode 22, a hole injection layer 23, a light-emitting layer 24, and a metal cathode 25 in this order from bottom to top. When a forward bias voltage is applied, the hole is injected from the anode 22, and electrons are injected from the cathode 25. The potential difference caused by the applied electric field causes the electrons and holes to move in the film, thereby generating in the light-emitting layer 24. 5 1311031 Coverage. Part of the energy released by the electron hole combination excites the luminescent molecules of the luminescent layer 24 to become an excited state. When the luminescent molecules decay from the excited state to the ground state, a certain proportion of the energy is emitted in the form of photons, and the emitted light It is an organic electroluminescence. Please refer to the third figure, which is also a cross-sectional view of a conventional OLED device structure, which was proposed by C. W. Tang of Kodak Company in 1988 in U.S. Patent No. 4,720,432. In this embodiment, the OLED device has a transparent substrate 31, a transparent anode 32, a hole injection layer 33, an electron-emitting layer 34, and a metal cathode 35, which are sequentially arranged from bottom to top. When a forward bias voltage is applied, the hole is injected from the anode 32, and electrons are injected from the cathode 35. The potential difference caused by the applied electric field causes the electrons and holes to move in the film, thereby generating in the light-emitting layer 34. Coverage. Part of the energy released by the electron hole combination excites the luminescent molecules of the luminescent layer 34 to become an excited state. When the luminescent molecules decay from the excited state to the ground state, a certain proportion of the energy is emitted in the form of photons, and the emitted light It is an organic electroluminescence. Please refer to the fourth figure, which is a conventional OLED device. The structure is proposed by Saito et al., 1992, and is disclosed in U.S. Patent No. 5,085,946. The structure of the OLED device comprises a transparent substrate 41, a step from bottom to top. The transparent anode 42, a hole transport layer 43, a light-emitting layer 44 having an electron transport function, and a metal cathode 45 can generate organic electroluminescence. </ RTI> </ RTI> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; The light-emitting layer 53, the electron transport layer 54, and a metal cathode 55' of the hole transport function can also generate organic electroluminescence. Please refer to the sixth figure, which is a three-layer structure OLED device proposed by Saito et al. in Chemical Physics Letters, Vol. 178, p. 488 (1991). The structure of the OLED device includes a transparent substrate 6 from bottom to top. A transparent anode 62, a hole transport layer 63, a light-emitting layer 64, an electron transport layer 65, and a metal cathode 66 can also produce organic electroluminescence. Kido modified the structure in Applied Physics Letters, Vol. 61, p. 761 (1992), which is called a privileged structure. The difference is that the luminescent layer is replaced by a privileged layer. If the thickness of the occlusion layer is properly controlled, a hybrid light source can be obtained. White light. The present inventors have been engaged in research and many practical experiences based on many years of research, design and discussion of various aspects, and the present invention proposes an organic light-emitting diode device and a manufacturing method thereof as the above-mentioned desired implementation and basis. 7 1311031 SUMMARY OF THE INVENTION In view of the above problems, an object of the present invention is to provide an organic light emitting diode device and a method of fabricating the same, and in particular to have a very low hole injection energy barrier between a conductive layer and a light emitting layer, and more preferably Injecting energy barriers without holes, so that holes can be transmitted without hindrance. In order to achieve the above object, an organic light emitting diode device according to the present invention comprises a substrate, a first conductive layer, a light emitting layer, an electron transport layer, an electron injection layer and a second conductive layer. The first conductive layer is located on the substrate, the light emitting layer is located above the first conductive layer, the electron transport layer is located above the light emitting layer, the electron injection layer is located above the electron transport layer, and the second conductive layer is located above the electron injection layer, and the first A hole injection energy barrier of less than 0.2 electron volts between the conductive layer and the light-emitting layer, and more preferably no hole injection energy gap, enables the hole to be unimpeded between the first conductive layer and the light-emitting layer. According to the present invention, the organic light-emitting diode device and the method for fabricating the same have low energy gap between the conductive layer and the light-emitting layer, or have no energy gap, thereby producing an OLED having better light-emitting efficiency, and because There is no need to add a plating hole to inject or transport the material layer, and the requirements for reducing the manufacturing cost are taken into consideration. In order to provide a better understanding and understanding of the technical features and the efficacies of the present invention, the preferred embodiments and related drawings are provided for the purpose of assistance, and the detailed descriptions are followed by a description. . 8 1311031 [Embodiment] In order to make the above objects, features, and advantages of the present invention more comprehensible, the organic light-emitting diode device according to the present invention and the manufacturing method thereof are exemplified in the following. The accompanying drawings are to be described in detail as & BRIEF DESCRIPTION OF THE DRAWINGS FIG. 7 is a cross-sectional view showing the structure of a bismuth LED device in accordance with a preferred embodiment of the present invention. In this embodiment, the structure of '〇L; ED f includes a substrate 71, a first conductive layer I, a light layer 73, an electron transport layer 74, an electron injection layer 75, and a second conductive layer from bottom to top. Layer 76. The first conductive layer 72 is located on the substrate 71, the light-emitting layer 73 is located above the first conductive layer 72, the electron transport layer 74 is located above the light-emitting layer 73, the electron injection layer 75 is located above the electron transport layer 74, and the second conductive layer 76 It is located above the electron injection=75, and has a very low hole injection energy barrier between the first conductive layer 72 and the light-emitting layer 73. More preferably, it does not have a hole injection energy barrier, so that the hole is in the first conductive layer 72 and emits light. Layer 73 can be transmitted unimpeded. As described above, the luminescent layer 73 has a fluorescent luminescent material, or a phosphorescent luminescent material, or both, whereby the luminescent layer 73 emits light, and the electron transport layer 74 is generally benzimidazol-2-yl) Benzene (TPBi) > tris (8-hydroxyqUino-line) aluminum (Alq3) and other electron transport materials; electron injection layer 75 can be lithium fluoride (LiF) and other electron injection materials; the second 9 Ι 31 Ϊ 031 conductive layer 76 The conductive material is A1; the substrate 71 can be a glass substrate, a plastic substrate or a metal substrate; the first conductive layer 72 can be an indium tin oxide (ITO) layer or an indium zinc oxide (IZO). )Floor. Please refer to the eighth drawing, which is an energy level diagram of the 〇led device of the preferred embodiment of the present invention. It can be seen from the figure that the light-emitting layer of the present invention, for example, the energy level (H〇M〇) white between the blue light DPASN and the first conductive layer ITO is 5.2 eV', so that there is no hole injection energy barrier, and the hole is Unconstrained transfer between a conductive layer ITO and the light-emitting layer ODPASN).
DPASN 1311031 請參閱第九圖，其係本發明之較佳實施例之OLED裝 置製造方法之流程圖。此方法包含下列步驟： 步驟S91 :提供一基板； 步驟S92 :形成一第一導電層，位於基板上； 步驟S93:形成一發光層，位於第一導電層上方； 步驟S94:形成一電子傳輸層，位於發光層上方； 步驟S95 :形成一電子注入層，位於電子傳輸層 上方；以及 步驟S96 :形成一第二導電層，位於電子注入層 上方； 其中，第一導電層與發光層間具有極低之電洞注 入能障，更佳者為不具有電洞注入能障，使電洞於第 一導電層與發光層間能不受阻礙的傳遞。 承上所述，此發光層係具有一螢光發光材料、或 一磷光發光材料，或兩者兼具，藉以使發光層發出藍 光0 11 1311031 電子傳輸層一般可為TPBi、Alq3等電子傳輸材料；電 子注入層一般可為LiF等電子注入材料；第二導電層 一般可為A1等導電材料；基板一般可為玻璃基板、 塑膠基板或金屬基板。 請參閱表一與表二，係為依據本發明所列舉之實 施例及比較例之發光效能對照表。 表一 啟動 電壓 (V) 最大發 光亮度 (cd/m2) 能量轉換效率 (lm/W) CIE色座標 (100cd/m2) 實施例1 3.5 6,900 6.68 (0.15,0.20) 比較例1 4.0 8,3〇〇 3.82 (0.15,0.17) 比較例2 3.6 7,800 6.30 (0.16,0.17) 12 1311031 表二DPASN 1311031 Please refer to the ninth embodiment, which is a flow chart of a method of fabricating an OLED device in accordance with a preferred embodiment of the present invention. The method includes the following steps: Step S91: providing a substrate; Step S92: forming a first conductive layer on the substrate; Step S93: forming a light-emitting layer above the first conductive layer; Step S94: forming an electron transport layer Step S95: forming an electron injection layer above the electron transport layer; and step S96: forming a second conductive layer above the electron injection layer; wherein the first conductive layer and the light-emitting layer are extremely low The hole is implanted with an energy barrier, and more preferably, the hole is not filled with a barrier, so that the hole can be transmitted unimpeded between the first conductive layer and the light-emitting layer. As described above, the luminescent layer has a fluorescent luminescent material, or a phosphorescent luminescent material, or both, so that the luminescent layer emits blue light. 0 11 1311031 The electron transporting layer can generally be an electron transporting material such as TPBi or Alq3. The electron injecting layer may be an electron injecting material such as LiF; the second conductive layer may generally be a conductive material such as A1; the substrate may generally be a glass substrate, a plastic substrate or a metal substrate. Referring to Tables 1 and 2, the luminous efficacy comparison tables of the examples and comparative examples according to the present invention are shown. Table 1 Starting voltage (V) Maximum luminous brightness (cd/m2) Energy conversion efficiency (lm/W) CIE color coordinates (100 cd/m2) Example 1 3.5 6,900 6.68 (0.15, 0.20) Comparative Example 1 4.0 8,3〇 〇3.82 (0.15,0.17) Comparative Example 2 3.6 7,800 6.30 (0.16,0.17) 12 1311031 Table 2
實施例 啟動 電壓 (V) 最大發 光亮度 (cd/m2) 能量轉換效率 (lm/W) CIE色座標 (100cd/m2) 實施例2 2.5 18,000 12.50 (0.18,0.31) 比較例3 3.5 19,000 7.70 (0.18,0.29) 比較例4 2.8 18,500 9.60 (0.18,0.30) -...................I 【實施例1】 實施例1為應用本發明所製成之OLED裝置， 裝置結構係可參照第七圖所示，而能階圖請參考第 八圖，其製作過程為：將ITO透明導電玻璃依序以 清潔劑、去離子水、丙酮及異丙醇作超音波震盪清 洗，並置入煮沸之雙氧水中進行表面處理，隨後以 氮氣流乾燥其表面後，將其置入一真空腔體中，待 真空達10_5Torr壓力下，以熱蒸鍍方式，依序鍍製 30奈米的DPASN發光層33、40奈米的TPBi電子 傳輸層34、0.5奈米的LiF電子注入層35、及150奈 米的鋁電極36於ITO透明導電玻璃上。於亮.度100 cd/m2時，其能量轉換效率為6.7 lm/W，最大發光 亮度 6,900 cd/m2，其 CIE 色座標為（0.15, 0.20)。 【比較例1】EXAMPLES Starting Voltage (V) Maximum Luminous Brightness (cd/m2) Energy Conversion Efficiency (lm/W) CIE Color Coordinates (100 cd/m2) Example 2 2.5 18,000 12.50 (0.18, 0.31) Comparative Example 3 3.5 19,000 7.70 (0.18 , 0.29) Comparative Example 4 2.8 18,500 9.60 (0.18, 0.30) -..............I [Example 1] Example 1 is made by applying the present invention. For the OLED device, the device structure can be referred to the seventh figure, and the energy diagram can refer to the eighth figure. The manufacturing process is as follows: the ITO transparent conductive glass is sequentially treated with detergent, deionized water, acetone and isopropanol. Ultrasonic vibration cleaning, and placed in boiling hydrogen peroxide for surface treatment, and then dried on a surface with a nitrogen stream, placed in a vacuum chamber, under vacuum pressure of 10_5 Torr, by thermal evaporation, A 30 nm DPASN luminescent layer 33, a 40 nm TPBi electron transport layer 34, a 0.5 nm LiF electron injection layer 35, and a 150 nm aluminum electrode 36 were plated on the ITO transparent conductive glass. Yu Liang. When the temperature is 100 cd/m2, the energy conversion efficiency is 6.7 lm/W, the maximum luminous brightness is 6,900 cd/m2, and the CIE color coordinates are (0.15, 0.20). [Comparative Example 1]
為比較本發明方式與先前技藝所製造之OLED 13 1311031 裝置之差異，附上比較例1為依據習知之OLED裝 置，其裝置結構如第一圖所示，相較於實施例1， 其OLED裝置結構為多鍍製一 45奈米之 N,N,-bis-(l-naphthy)-N,N5 diphenyl-1,15-bipheny 1-4-4’-diamine (NPB)電洞傳輸層13，其能階圖請參考第 十圖，由於習知之NPB電洞傳輸層之存在，反而產 生一電洞注入能障0.3eV，使得此OLED裝置之效 能大幅下降，其各項發光效能如表一所示。 【比較例2】 為比較本發明方式與先前技藝所製造之OLED 裝置之差異，附上比較例2為依據習知之OLED裝 置，其裝置結構如第一圖所示，其能階圖請參考第 Ί—圖，相較於比較例1，其電洞傳輸材料改為 N,N,N’,N’-tetra(Naphthalen-2-yl)phenylenediamine (t-NPD)，由 於t-NPD電洞傳輸層之存在，反而產生一電洞注入 能障0.02eV，使得此OLED裝置之效能下降，同時 亦增加製造成本，其各項發光效能如表一所示。In order to compare the difference between the method of the present invention and the OLED 13 1311031 device manufactured by the prior art, the comparative example 1 is attached to the conventional OLED device, and the device structure is as shown in the first figure, compared with the OLED device of the embodiment 1. The structure is a multi-plated N,N,-bis-(l-naphthy)-N, N5 diphenyl-1, 15-bipheny 1-4-4'-diamine (NPB) hole transport layer 13, For the energy level diagram, please refer to the tenth figure. Due to the existence of the conventional NPB hole transmission layer, a hole injection energy barrier of 0.3eV is generated, which greatly reduces the performance of the OLED device. Show. [Comparative Example 2] In order to compare the difference between the method of the present invention and the OLED device manufactured by the prior art, Comparative Example 2 is attached to the conventional OLED device, and the device structure is as shown in the first figure, and the energy level diagram is referred to Ί-图, compared to Comparative Example 1, the hole transport material was changed to N, N, N', N'-tetra(Naphthalen-2-yl)phenylenediamine (t-NPD) due to t-NPD hole transport The existence of the layer instead generates a hole injection energy barrier of 0.02 eV, which makes the performance of the OLED device lower, and also increases the manufacturing cost. The luminous efficacy of each layer is shown in Table 1.
【實施例2】 t NPD 實施例2亦為本發明應用之OLED裝置，其裝 置結構如第七圖所示，而能階圖請參考第十二圖。 14 1311031 相較於實施例1，其製造方式與實施例1相同，除 了發光層換為 trans-l,2-bis(6-(N，N-di-p-tolylamino) -Naph-thalen-2-yl)ethene (BNE)。於亮度 100 cd/m2 時，其 能量轉換效率為12.5 lm/W，最大發光亮度為18,000 cd/m2,其 CIE 色座標為（0.18,0.31)。[Embodiment 2] t NPD Embodiment 2 is also an OLED device to which the present invention is applied. The device structure is as shown in the seventh figure, and the energy level diagram is shown in Fig. 12. 14 1311031 Compared with Example 1, the manufacturing method is the same as that of Embodiment 1, except that the luminescent layer is changed to trans-l, 2-bis(6-(N,N-di-p-tolylamino)-Naph-thalen-2 -yl)ethene (BNE). At a luminance of 100 cd/m2, the energy conversion efficiency is 12.5 lm/W, the maximum luminance is 18,000 cd/m2, and the CIE color coordinates are (0.18, 0.31).
【比較例3】 為比較本發明方式與先前技藝所製造之OLED 裝置之差異，附上比較例3為依據習知之OLED裝 置，其裝置結構如第一圖所示，其能階圖請參考第 十三圖，相較於實施例2,為多鍍製一 45奈米之NPB 電洞傳輸層13，由於此電洞傳輸層之存在，反而產 生一電洞注入能障〇.28eV，使得此OLED裝置之效 能大幅下降，其各項發光效能如表二所示。 【比較例4】 為比較本發明方式與先前技藝所製造之OLED裝置之差 異，附上比較例4為依據習知之OLED裝置，其裝置結 構如第一圖所示，其能階圖請參考第十四圖，相較於比 15 1311031 如表二所示。 ，例3 ’其電洞傳輪材料改為，由於此電 存在，使得電洞傳遞時所需消耗之能量提升，故造成0LED 裝,之效能下降”亦增加t造成本，其各項發光效能 以上所述僅為舉難，而非為限制性者。任何夫 脫離本發明之精神與範嘴，而對其進行之等效修 變更，均應包含於後附之申請專利範圍中。〃/ 【圖式簡單說明】 第-圖其係依據習知之QLED裝置之結_面圖； 第二圖其係依據習知之另一 〇LED裝置之結構剖面 圖； 第三圖為習知之OLED裝置之結構剖面圖； 第四圖為習知之另—〇LED裝置之結構剖面圖； 第五圖為習知之OLED裝置之結構剖面圖； 第六圖為習知之另一 OLED裝置之結構剖面圖； 第七圖其係本發明之較佳實施例之〇LED裝置之結 構剖面圖； α 第八圖其係本發明之較佳實施例之〇LED裝置之能 階圖； 第九圖其係本發明之較佳實施例之OLED裝置之製 1311031 造方法之流程圖；以及 第十圖其係比較本發明與先前技藝之差異，所例舉 之OLED裝置之能階圖； 第十一圖其係比較本發明與先前技藝之差異，所例 舉之OLED裝置之能階圖； 第十二圖為本發明之較佳實施例之OLED裝置之能 階圖； 第十三圖為比較本發明與先前技藝之差異，所例舉 之OLED裝置之能階圖； 第十四圖為比較本發明與先前技藝之差異，所例舉 之OLED裝置之能階圖； 【主要元件符號說明】 U、2卜3卜4卜5卜6卜71 :基板； 12 :陽極； 13、43、53、63 :電洞傳輸層； 131 :電洞； 23、33 :電洞注入層； 14 :有機發光層； 15、54、65、74 :電子傳輸層； 151 :電子； 17 1311031 16、75 :電子注入層； 17 :陰極； 22、32、42、52、62、72 :第一導電層； 24、 34、64、73 :發光層； 34、44 :具電子傳輸功能之發光層； 53 :具電洞傳輸功能之發光層； 25、 35、45、55、66、76 :第二導電層； S91〜S96 :流程步驟。 18[Comparative Example 3] In order to compare the difference between the method of the present invention and the OLED device manufactured by the prior art, Comparative Example 3 is attached to the conventional OLED device, and the device structure is as shown in the first figure, and the energy level diagram is referred to In the thirteenth figure, compared with the second embodiment, a 45 nm NPB hole transport layer 13 is multi-plated. Due to the existence of the hole transport layer, a hole injection energy barrier of 28 eV is generated. The performance of the OLED device is greatly reduced, and its luminous efficacy is shown in Table 2. [Comparative Example 4] In order to compare the difference between the inventive method and the OLED device manufactured by the prior art, Comparative Example 4 is attached to the conventional OLED device, and the device structure is as shown in the first figure, and the energy level diagram is referred to Fourteen figures, as shown in Table 2, compared to 15 1311031. , Example 3 'The hole-passing material is changed to, because of the existence of this electricity, the energy required for the transmission of the hole is increased, so that the performance of the 0LED package is reduced, and the efficiency is reduced. The above description is only for the sake of limitation, and it is not intended to be limiting. Any change from the spirit and scope of the present invention, and equivalent modifications thereof, should be included in the scope of the appended patent application. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view of a conventional QLED device; FIG. 2 is a cross-sectional view of another LED device according to a conventional structure; and FIG. 3 is a structure of a conventional OLED device The fourth drawing is a structural sectional view of a conventional OLED device; the fifth drawing is a structural sectional view of a conventional OLED device; and the sixth drawing is a structural sectional view of another conventional OLED device; BRIEF DESCRIPTION OF THE DRAWINGS FIG. 8 is a cross-sectional view showing the structure of an LED device according to a preferred embodiment of the present invention; FIG. 8 is an energy level diagram of the LED device of the preferred embodiment of the present invention; Manufacture of OLED device of the embodiment 1311031 The figure and the tenth figure compare the difference between the present invention and the prior art, and the energy level diagram of the OLED device is exemplified; the eleventh figure compares the difference between the present invention and the prior art, and the OLED device is exemplified. Figure 12 is an energy level diagram of an OLED device according to a preferred embodiment of the present invention; and a thirteenth view is an energy level diagram of an OLED device exemplified by comparing the difference between the present invention and the prior art; Figure 14 is a comparison of the difference between the present invention and the prior art, and the energy level diagram of the OLED device is exemplified; [Explanation of main component symbols] U, 2 Bu 3 Bu 4 Bu 5 Bu 6 Bu 71: Substrate; 12: Anode 13, 43, 53, 63: hole transport layer; 131: hole; 23, 33: hole injection layer; 14: organic light-emitting layer; 15, 54, 65, 74: electron transport layer; 151: electron; 17 1311031 16, 75: electron injection layer; 17: cathode; 22, 32, 42, 52, 62, 72: first conductive layer; 24, 34, 64, 73: light-emitting layer; 34, 44: with electronic transmission function Light-emitting layer; 53: light-emitting layer with hole transmission function; 25, 35, 45, 55, 66, 76: second conductive layer; S91~S96: Process step. 18