TWI405711B - 材料表面上產生可儲存資料內容之奈米圖案之方法 - Google Patents
材料表面上產生可儲存資料內容之奈米圖案之方法 Download PDFInfo
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- TWI405711B TWI405711B TW097116328A TW97116328A TWI405711B TW I405711 B TWI405711 B TW I405711B TW 097116328 A TW097116328 A TW 097116328A TW 97116328 A TW97116328 A TW 97116328A TW I405711 B TWI405711 B TW I405711B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00031—Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
- G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
- G11B9/149—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the memorising material or structure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/07—Data storage devices, static or dynamic memories
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49147—Assembling terminal to base
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49147—Assembling terminal to base
- Y10T29/49151—Assembling terminal to base by deforming or shaping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
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- Manufacturing & Machinery (AREA)
- Nanotechnology (AREA)
- Analytical Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
本發明係為一種材料表面上產生可儲存資料內容之奈米圖案之方法,特別是有關於藉由奈米壓痕動作產生相對應之突點。
隨著科技的日新月異,各種微加工以及製程技術的迅速發展,使得各種高科技元件均朝著精密化、微小化的趨勢發展,這些微小元件的應用非常的廣泛,凡舉軍事、工業、醫療、光電通訊、生物科技以及日常生活中,都有其應用的例子,例如手機、印表機的噴墨裝置、生物晶片、各種光通訊元件等。由於人類對於微小化材料的殷切需求,已由原來的微米(μm)範圍進入了奈米(nm)範圍的時代,然而奈米技術不只是縮減物體的尺寸,製造出極小的零件而已,一旦物質尺寸小到100奈米以內時,常會產生新的特性與現象。
因此,在薄膜所應用的廣泛範圍中,包括感測器、半導體、磨潤等不同的領域,由於奈米技術的迅速發展,使得奈米薄膜的使用日益增加。材料縮小至分子與巨觀尺度之間的奈米尺寸時,材料的性質都與同種物質塊材材料的性質有很大的不同。產生奈米微粒(圖案)之方法,其多半是一點一點的長上去,或直接壓出圖樣,如中華民國專利證書號I248859:奈米轉印用模仁之製法,又或以蝕刻的方式產生圖樣。
其中,近年來對於奈米壓痕的試驗中,由科學家利用STM進行的(001)Au奈米壓痕試驗中,觀察到了有小壟起(hillock)從壓痕處沿<110>放射的現象。同時,也經
由使用奈米力學模擬三維的原子級壓痕行為,確認此差排放射的現象。
而此一現象的發現,藉本發明人基於多年從事研究與諸多實務經驗,經多方研究設計與專題探討,遂於本發明提出一種材料表面上產生可儲存資料內容之奈米圖案之方法以作為前述期望一實現方式與依據。
有鑑於上述課題,本發明之目的為提供一種於材料表面上產生可儲存資料內容之奈米圖案之方法,特別是有關於藉由奈米壓痕動作產生相對應之突點,可應用於資料儲存方法。緣是,為達上述目的,依本發明之於材料表面上產生可儲存資料內容之奈米圖案之方法,包含步驟如下:(a)覆上一可控制晶格方向之薄膜;(b)提供一奈米壓痕動作,作用於可控制晶格方向之薄膜上;以及(c)於薄膜一特定位置產生一壓痕,致使於一特定方向上產生至少一突點。
本發明之材料表面上產生可儲存資料內容之奈米圖案之方法,其薄膜為一單晶金屬薄膜,而突點之高度與奈米壓痕動作之強度相對應,又或突點之數目及圖樣亦與奈米壓痕動作之強度相對應,而奈米壓痕動作於可控制晶格方向之金屬薄膜上,產生一壓痕,致使於可控制晶格方向之金屬薄膜之一特定方向上產生至少一突點,作為儲存的資料內容。
茲為使 貴審查委員對本發明之技術特徵及所達成
之功效有更進一步之瞭解與認識,下文謹提供較佳之實施例及相關圖式以為輔佐之用,並以詳細之說明文字配合說明如後。
為讓本發明之上述目的、特徵、和優點能更明顯易懂,下文依本發明之材料表面上產生可儲存資料內容之奈米圖案之方法特舉較佳實施例,並配合所附相關圖式,作詳細說明如下,其中相同的元件將以相同的元件符號加以說明。
請參閱第一圖,係為本發明之材料表面上產生可儲存資料內容之奈米圖案之方法流程圖。此流程中包含下列步驟:步驟S11:覆上一可控制晶格方向之薄膜;步驟S12:提供一奈米壓痕動作,作用於可控制晶格方向之薄膜上;以及步驟S13:於薄膜一特定位置產生一壓痕,致使於一特定方向上產生至少一突點。
此方法更包含提供一加熱動作或其他消除動作,使突點消失重新進行壓痕,上述之薄膜可為一單晶金屬薄膜,而突點之高度與奈米壓痕動作之強度相對應,又或突點之數目及圖樣亦與奈米壓痕動作之強度相對應,又可應用於寫入儲存裝置之資料儲存方法及其儲存裝置。
請參閱第二圖,係為本發明之資料儲存方法流程圖。
步驟S21:接收一資料內容;步驟S22:提供一具可控制晶格方向之薄膜;步驟S23:提供一奈米壓痕動作,依據資料內容以控
制力量強度,作用於薄膜上;以及步驟S24:於薄膜之一特定區域,依據資料內容一一產生一系列壓痕,且單一壓痕於金屬薄膜之一儲存區域上依據奈米壓痕動作之強度產生相對應之至少一突點,致使產生儲存資料內容之一系列突點。
此方法更包含提供一加熱動作或其他消除動作,使突點消失以抹除資料內容,重新進行壓痕儲存新的資料內容,上述之薄膜係為一單晶金屬薄膜,而突點之高度與奈米壓痕動作之強度相對應,又或突點之數目及圖樣亦與奈米壓痕動作之強度相對應。
請參閱第三圖,係為本發明之資料儲存之示意圖。圖中,包含有一基材41及一可控制晶格方向之薄膜42,其形成於基材41之上,並藉由外部之一奈米壓痕動作43於可控制晶格方向之薄膜42上,產生一壓痕44,致使於可控制晶格方向之薄膜42之一特定方向45上產生至少一突點46,作為儲存的資料內容。
上述之基材可為金屬材質或是非金屬材質,上述之薄膜係為一單晶金屬薄膜,而突點之高度與奈米壓痕動作之強度相對應,又或突點之數目及圖樣亦與奈米壓痕動作之強度相對應,且金屬薄膜可經一加熱動作或其他消除動作,使突點消失抹除儲存的資料內容。
綜上所述,在具可控制晶格方向之薄膜,於特定的材料方向上,只需經由如奈米壓痕機進行一奈米壓痕動作點壓一下產生壓痕,材料表面變會相應產生突點形成一種圖樣,而突出的圖樣種類、突點數目、突點高度均與施壓的強度有相關。再者,圖樣較佳為一直線,則力度越大,圖樣越長,依此可相應於資料內容調整奈米壓痕動作的強度,產生相應的突點數目或突點高度,藉以
達成二進位以上的資料內容儲存形式。
以上所述僅為舉例性,而非為限制性者。任何未脫離本發明之精神與範疇,而對其進行之等效修改或變更,均應包含於後附之申請專利範圍中。
S11~S13‧‧‧流程步驟
S21~S24‧‧‧流程步驟
41‧‧‧基材
42‧‧‧可控制晶格方向之薄膜
43‧‧‧奈米壓痕動作
44‧‧‧壓痕
45‧‧‧特定方向
46‧‧‧突點
第一圖 係為本發明之於材料表面上產生可儲存資料內容之奈米圖案之方法流程圖;第二圖 係為本發明之資料儲存方法流程圖;以及第三圖 係為本發明之資料儲存之示意圖。
S11~S13‧‧‧流程步驟
Claims (3)
- 一種材料表面上產生可儲存資料內容之奈米圖案之方法,包含下列步驟:覆上一可控制晶格方向之薄膜;提供一奈米壓痕動作,藉以點壓該可控制晶格方向之薄膜;於該可控制晶格方向之薄膜之一特定位置,產生一壓痕,致使於該可控制晶格方向之薄膜之一特定方向上造成可抹除之突狀現象以產生儲存一資料內容之至少一突點;利用該奈米壓痕動作所產生之該突點之數目或該突點之高度,以作為二進位以上的資料儲存形式,其中該突點之高度與該奈米壓痕動作之強度相對應,又或該突點之數目及圖樣亦與該奈米壓痕動作之強度相對應,當該突點之圖樣為一直線時,該奈米壓痕動作之強度越大,則該突點之圖樣越長;以及當需要抹除該資料內容時,則提供一消除動作,使該突點消失以抹除該資料內容,俾重新進行該奈米壓痕動作以儲存另一資料內容。
- 如申請專利範圍第1項所述之於材料表面上產生可儲存資料內容之奈米圖案之方法,其中該薄膜係為一單晶金屬薄膜。
- 如申請專利範圍第1項所述之於材料表面上產生可儲存資料內容之奈米圖案之方法,其中該消除動作為一 加熱動作。
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TW097116328A TWI405711B (zh) | 2008-05-02 | 2008-05-02 | 材料表面上產生可儲存資料內容之奈米圖案之方法 |
US12/431,213 US8434221B2 (en) | 2008-05-02 | 2009-04-28 | Method for generating nano patterns upon material surfaces |
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TW097116328A TWI405711B (zh) | 2008-05-02 | 2008-05-02 | 材料表面上產生可儲存資料內容之奈米圖案之方法 |
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JPH07112041B2 (ja) * | 1986-12-03 | 1995-11-29 | シャープ株式会社 | 半導体装置の製造方法 |
US5910940A (en) * | 1996-10-08 | 1999-06-08 | Polaroid Corporation | Storage medium having a layer of micro-optical lenses each lens generating an evanescent field |
US5822285A (en) * | 1997-03-31 | 1998-10-13 | International Business Machines Corporation | Atomic force microscopy disk data storage system with nonradial tracking lines |
US5856967A (en) * | 1997-08-27 | 1999-01-05 | International Business Machines Corporation | Atomic force microscopy data storage system with tracking servo from lateral force-sensing cantilever |
US7074498B2 (en) * | 2002-03-22 | 2006-07-11 | Borealis Technical Limited | Influence of surface geometry on metal properties |
US20050094298A1 (en) * | 2003-09-22 | 2005-05-05 | Kabushiki Kaisha Toshiba | Imprint stamper, method for manufacturing the same, recording medium, method for manufacturing the same, information recording/reproducing method, and information recording/reproducing apparatus |
TWI248859B (en) | 2004-11-24 | 2006-02-11 | Ind Tech Res Inst | Manufacture of mold core used in nanoimprint |
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Non-Patent Citations (4)
Title |
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【參考文獻】Fuente, O. R. de la, Zimmerman, J. A., Gonzalez, M. A., Figuera, J. de la, Hamilton, J. C., Pai, W. W., and Rojo, J. M., 2002, "Dislocation Emission around Nanoindentations on a (001) fcc Metal Surface Studied by Scanning Tunneling Microscopy and Atomistic Simulations", Phys. Rev. Lett., 88, p.036101-1 * |
Martha Mary McCann, "Nanoindentation of Gold Single Crystals",Virginia Polytechnic Institute and State University, Material Science and Engineering, Doctor of Philosophy, 2004.03.29 * |
譚仲明,"奈米薄膜機械性質之探討",國立中正大學機械工程研究所,博士論文,2005 年7 月 * |
馮芳瑞,"奈米壓痕深度及加熱溫度對金矽薄膜共晶形成之影響",國立成功大學機械工 程學系,碩士論文,2006 年6 月 * |
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US20090272172A1 (en) | 2009-11-05 |
US8434221B2 (en) | 2013-05-07 |
TW200946443A (en) | 2009-11-16 |
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