TWI400344B - Vacuum barrel and vacuum deposition machine for vacuum plating machine - Google Patents

Vacuum barrel and vacuum deposition machine for vacuum plating machine Download PDF

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TWI400344B
TWI400344B TW97133557A TW97133557A TWI400344B TW I400344 B TWI400344 B TW I400344B TW 97133557 A TW97133557 A TW 97133557A TW 97133557 A TW97133557 A TW 97133557A TW I400344 B TWI400344 B TW I400344B
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vapor deposition
space
disposed
target
evaporation
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TW201011113A (en
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Metal Ind Res & Dev Ct
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Description

真空滾鍍機及用於真空滾鍍機之蒸鍍裝置Vacuum barrel plating machine and vapor deposition device for vacuum barrel plating machine

本發明是有關於一種真空滾鍍機,特別是指一種利用陰極電弧蒸鍍的真空滾鍍機。The present invention relates to a vacuum barrel plating machine, and more particularly to a vacuum barrel plating machine utilizing cathode arc evaporation.

如圖1所示,習知真空滾鍍機具有一中空腔體11、一設於該腔體11中的待鍍物10、一個間隔鑲設於該腔體11之壁面上的靶體12、一組對應設於該靶體12中的冷卻水路單元13、一組對應設於所述靶體12與腔體11壁面之間的絕緣墊14,及一個裝設於該腔體11內的引弧器15。As shown in FIG. 1 , a conventional vacuum barrel plating machine has a hollow body 11 , a material to be plated 10 disposed in the cavity 11 , and a target body 12 spaced apart from the wall surface of the cavity 11 . a set of corresponding cooling water channel units 13 disposed in the target body 12, a pair of insulating pads 14 corresponding between the target body 12 and the wall surface of the cavity 11 , and a lead installed in the cavity 11 Arc 15 .

該腔體11內部是呈真空狀態,且該腔體11外部是呈常壓狀態,而該靶體12具有一位於該腔體11內的陰極部121,及一位於該腔體11外的陽極部122,該絕緣墊14係用以隔絕該陰極部121與該陽極部122,另外,該真空滾鍍機更具有一個對應設於該靶體12之陰極部121上且可供引弧器15進行放電引弧的陰極靶材16,及一個對應設於所述靶體12之陽極部122上的磁控器17。The inside of the cavity 11 is in a vacuum state, and the outside of the cavity 11 is in a normal pressure state, and the target body 12 has a cathode portion 121 located in the cavity 11, and an anode located outside the cavity 11. The insulating pad 14 is configured to isolate the cathode portion 121 from the anode portion 122. In addition, the vacuum barrel plating machine further has a corresponding cathode portion 121 disposed on the target body 12 and is available for the arc runner 15 A cathode target 16 for performing discharge arcing and a magnetron 17 corresponding to the anode portion 122 of the target body 12 are provided.

依據上述之設計,當將通電後的引弧器15與陰極靶材16接觸時,亦產生電弧點,而該磁控器17產生的磁場使其磁力線分佈於陰極靶材16表面,用以導引電弧點之運動軌跡,而使所述陰極靶材16能夠均勻地蒸發,進而鍍膜於該待鍍物10上。According to the above design, when the energized arc-trigger 15 is brought into contact with the cathode target 16, an arc spot is also generated, and the magnetic field generated by the magnetron 17 causes the magnetic lines of force to be distributed on the surface of the cathode target 16 for guiding The trajectory of the arc point is induced, so that the cathode target 16 can be uniformly evaporated and then coated on the object to be plated 10.

不過,由於該陰極靶材16係為柱形的金屬材料,被引弧器15引弧蒸發的面積受到侷限,為了擴大該待鍍物10 的鍍膜區域,通常是採用如圖2所示之多弧式靶源的設計,將多數個陰極靶材16以直線排列或繞置的方式鑲設於該腔體11壁面,雖然多弧式靶源的設計可增加陰極靶材16之數量來擴大蒸鍍範圍,不過,該腔體11內部的空間有限,較不易安置數量過多的陰極靶材16,而且,每一陰極靶材16需再額外安裝相對應的靶體12、冷卻水路單元13、引弧器15,及磁控器17等零組件,相對增加該真空滾鍍機內部構件的複雜度,對於後續的安裝拆卸與保養上,亦造成維護的不便。However, since the cathode target 16 is a columnar metal material, the area of the arc ignition by the arc runner 15 is limited, in order to enlarge the object to be plated 10 The coating area is usually designed by using a multi-arc target as shown in FIG. 2, and a plurality of cathode targets 16 are arranged in a straight line or in a circular manner on the wall surface of the cavity 11, although a multi-arc target The design of the source can increase the number of cathode targets 16 to expand the evaporation range. However, the space inside the cavity 11 is limited, and it is difficult to place a large number of cathode targets 16, and each cathode target 16 needs to be extra. Installing the corresponding target 12, the cooling water path unit 13, the arc starter 15, and the magnetron 17 and the like, relatively increasing the complexity of the internal components of the vacuum barreling machine, and for subsequent installation, disassembly and maintenance, Inconvenience caused by maintenance.

因此,本發明之目的,即在提供一種可縮小腔體體積並縮短真空抽氣時間的真空滾鍍機。Accordingly, it is an object of the present invention to provide a vacuum barrel plating machine that reduces the volume of the chamber and shortens the vacuum pumping time.

再者,本發明之另一目的,即在提供一種構件簡化的蒸鍍裝置。Further, another object of the present invention is to provide a vapor deposition apparatus having a simplified structure.

詳細來說,該真空滾鍍機包含一具有蒸鍍空間的蒸鍍艙、一設於該蒸鍍空間中並可產生電弧的引弧器,及一設置於該蒸鍍艙的蒸鍍裝置。In detail, the vacuum barrel plating machine comprises an evaporation chamber having an evaporation space, an arc starter disposed in the evaporation space and capable of generating an arc, and an evaporation device disposed in the evaporation chamber.

該蒸鍍裝置包括一設於該蒸鍍艙上的基座、一連設於該基座並容置於該蒸鍍艙之蒸鍍空間中的腔體座,及一概呈平板狀且鑲嵌於該腔體座上的靶體。The vapor deposition device includes a base disposed on the vapor deposition chamber, a cavity seat connected to the base and housed in the evaporation space of the vapor deposition chamber, and a flat plate shape and embedded in the The target on the cavity seat.

其中,該腔體座界定有一呈常壓狀態的大氣空間;該靶體具有一突露於該蒸鍍艙之蒸鍍空間中並供一靶材覆設的陰極部,及一與該陰極部相反方向且位於該大氣空間中的陽極部,且該引弧器可以與該靶材對應接觸。Wherein, the cavity seat defines an atmospheric space in a normal pressure state; the target body has a cathode portion exposed in the vapor deposition space of the vapor deposition chamber and provided for a target material, and a cathode portion An anode portion in the opposite direction and located in the atmospheric space, and the arc runner can be in corresponding contact with the target.

本發明之功效在於,藉由將該蒸鍍裝置之腔體座裝設於該蒸鍍艙中,並將該平板狀的靶體鑲嵌於該腔體座上,不僅提高覆設於該陰極部之靶材的面積來擴大蒸鍍範圍,更可免除多弧式靶源的設計,簡化後續拆裝與保養的問題。The utility model has the advantages that the cavity seat of the vapor deposition device is installed in the vapor deposition chamber, and the flat target body is embedded in the cavity seat, thereby not only improving the coating on the cathode portion The area of the target expands the evaporation range, which eliminates the design of the multi-arc target and simplifies the subsequent disassembly and maintenance.

有關本發明之前述及其他技術內容、特點與功效,在以下配合參考圖式之二個較佳實施例的詳細說明中,將可清楚的呈現。The above and other technical contents, features and advantages of the present invention will be apparent from the following detailed description of the preferred embodiments of the invention.

在本發明被詳細描述之前,要注意的是,在以下的說明中,類似的元件是以相同的編號來表示。Before the present invention is described in detail, it is noted that in the following description, like elements are denoted by the same reference numerals.

參閱圖3,本發明之真空滾鍍機之第一較佳實施例,包含一具有可呈真空狀態之蒸鍍空間30的蒸鍍艙3、一設於該蒸鍍空間30中並可產生電弧的引弧器4,及一可拆卸地設置於該蒸鍍艙3的蒸鍍裝置2。Referring to FIG. 3, a first preferred embodiment of the vacuum barrel plating machine of the present invention comprises a vapor deposition chamber 3 having a vapor deposition space 30 in a vacuum state, and is disposed in the vapor deposition space 30 and can generate an electric arc. The arc runner 4 and a vapor deposition device 2 detachably disposed in the vapor deposition chamber 3.

其中,該蒸鍍艙3具有一艙體31、一可封閉該艙體31的艙門32,及一設於該艙體31下方且供該艙門32靠置滑動的滑軌33,該蒸鍍裝置2係設於該艙門32上且與該艙門32連動,且該艙體31與艙門32共同界定出蒸鍍空間30,而該引弧器4係採用連桿方式傳動,使其安裝位置與活動範圍較具彈性。Wherein, the vapor deposition chamber 3 has a cabin 31, a hatch 32 that can close the cabin 31, and a slide rail 33 disposed under the cabin 31 for sliding the hatch 32 to abut, the steaming The plating device 2 is disposed on the door 32 and interlocked with the door 32, and the cabin 31 and the door 32 jointly define an evaporation space 30, and the arc runner 4 is driven by a connecting rod. Its installation location and range of activities are more flexible.

該蒸鍍裝置2包含一鎖置於該蒸鍍艙3之艙門32上的基座21、一連設於該基座21並容置於該蒸鍍艙3之蒸鍍空間30中的腔體座22、一概呈平板狀且鑲嵌於該腔體座22 上的靶體23、一位於該蒸鍍空間30中的靶材24、一設於該靶體23中的冷卻水路單元25,及一設於該靶體23上的磁控單元26。The vapor deposition device 2 includes a base 21 locked to the hatch 32 of the vapor deposition chamber 3, and a cavity connected to the base 21 and housed in the vapor deposition space 30 of the vapor deposition chamber 3. The seat 22 is substantially flat and embedded in the cavity seat 22 The upper target 23, a target 24 located in the vapor deposition space 30, a cooling water path unit 25 disposed in the target 23, and a magnetron unit 26 disposed on the target 23.

其中,該腔體座22界定有一呈常壓狀態的大氣空間220,且該靶體23具有一突露於該蒸鍍艙3之蒸鍍空間30中的陰極部231,及一與該陰極部231相反方向且位於該大氣空間220中的陽極部232;該靶材24覆設於該靶體23之陰極部231,該磁控單元26設於該靶體23之陽極部232上且位於該大氣空間220中,且該真空滾鍍機之引弧器4可與該靶材24對應接觸。The cavity seat 22 defines an atmospheric space 220 in a normal pressure state, and the target body 23 has a cathode portion 231 exposed in the vapor deposition space 30 of the vapor deposition chamber 3, and a cathode portion An anode portion 232 located in the opposite direction and located in the atmospheric space 220; the target member 24 is disposed on the cathode portion 231 of the target body 23, and the magnetron unit 26 is disposed on the anode portion 232 of the target body 23 and located at the anode portion 232 of the target body 23 In the atmospheric space 220, the arc runner 4 of the vacuum barreling machine can be in corresponding contact with the target 24.

依據上述之結構,當欲鍍膜該待鍍物51時,先將該引弧器4施加一電壓,瞬間接觸該靶材24表面後離開,使該靶材24表面產生電弧點(圖未示),該電弧點在真空中可穩定地存在於該靶材24表面,並籍由該磁控單元26的磁場設計,於該靶材24表面產生磁力線,使該電弧點循磁場軌跡移動,進而達到令該靶材24均勻蒸發的效果,進而蒸鍍於該待鍍物51上,其中,該磁控單元26可用以調整磁場範圍,包括磁極至該靶材24表面距離調整,及磁極涵蓋面積的調整等。According to the above structure, when the object to be plated 51 is to be coated, a voltage is applied to the arc runner 4, and the surface of the target 24 is momentarily contacted to leave, so that an arc spot is generated on the surface of the target 24 (not shown). The arc point can be stably present on the surface of the target 24 in a vacuum, and the magnetic field of the target 24 is generated by the magnetic field design of the magnetic control unit 26, so that the arc point moves along the magnetic field trajectory, thereby achieving The effect of uniformly evaporating the target 24 is further evaporated on the object to be plated 51, wherein the magnetic control unit 26 can be used to adjust the magnetic field range, including the magnetic pole to the surface distance adjustment of the target 24, and the magnetic pole cover area. Adjustment and so on.

再者,由於該艙門32是可以於該滑軌33上線性滑動,進而允許該艙門32可靠近或遠離該艙體31(如圖4所示),用以方便設於該艙門32上的蒸鍍裝置2於該艙門32打開後,進行維修與保養的作業。Moreover, since the door 32 is linearly slidable on the slide rail 33, the door 32 is allowed to be close to or away from the cabin 31 (as shown in FIG. 4) for convenient installation on the door 32. The upper vapor deposition device 2 performs maintenance and maintenance work after the door 32 is opened.

在本實施例中,該靶材24蒸鍍所使用的電流較高,逾 80安培以上,所以,該靶體23係採用具有較高導電率的純銅類金屬材質,用以降低阻抗並穩定電弧。In this embodiment, the current used for vapor deposition of the target 24 is higher, exceeding More than 80 amps, the target 23 is made of a pure copper-based metal with a high electrical conductivity to reduce impedance and stabilize the arc.

籍由上述之設計,該靶體23之面積設計較習知靶體大且呈平板狀,而且,將具有大氣空間220之腔體座22裝設於該蒸鍍艙3中,不僅可提高覆設於該陰極部231之靶材24的面積,用以擴大蒸鍍範圍,更可免除習知多弧式靶源的設計,簡化後續拆裝與保養上的問題。According to the above design, the area of the target body 23 is larger and flatter than that of the conventional target body, and the cavity seat 22 having the atmospheric space 220 is installed in the vapor deposition chamber 3, which not only improves the coverage. The area of the target 24 disposed in the cathode portion 231 is used to expand the evaporation range, and the design of the conventional multi-arc target source can be eliminated, and the problems of subsequent disassembly and maintenance can be simplified.

再者,由於該靶體23不是鑲設在該蒸鍍艙3上,而且該靶體23之面積較大,因此,不必要再增加靶體23的設置數量,以及增設相對應的冷卻水路單元25、引弧器4,及磁控單元26等零組件,所以,本發明之真空滾鍍機在不需增設零組件的狀況下,可有效縮小該蒸鍍艙3之蒸鍍空間30,相對縮短真空抽氣的時間。Furthermore, since the target body 23 is not mounted on the vapor deposition chamber 3, and the area of the target body 23 is large, it is not necessary to increase the number of the target bodies 23, and the corresponding cooling water path unit is added. 25, the arc starter 4, and the magnetron unit 26 and other components, so the vacuum barrel plating machine of the present invention can effectively reduce the vapor deposition space 30 of the vapor deposition chamber 3 without adding additional components, Shorten the time for vacuum pumping.

參閱圖5、6,本發明真空滾鍍機之第二較佳實施例,大致上是與該第一較佳實施例相同,皆包含一蒸鍍裝置2、一蒸鍍艙3,及一引弧器4。Referring to Figures 5 and 6, a second preferred embodiment of the vacuum barrel plating machine of the present invention is substantially the same as the first preferred embodiment, and includes an evaporation device 2, an evaporation chamber 3, and an introduction. Arc 4 .

不相同之處在於,該蒸鍍艙3具有一艙體31、一可封閉該艙體31的艙門32,該蒸鍍裝置2係設置於與該艙門32相對側之艙體31上,並容置於該蒸鍍艙3之蒸鍍空間30中,即,該第二較佳實施例為本發明真空滾鍍機另一種實施態樣,提供使用者不同的選擇。The difference is that the vapor deposition chamber 3 has a cabin 31, a hatch 32 that can close the cabin 31, and the vapor deposition device 2 is disposed on the cabin 31 opposite to the hatch 32. And it is accommodated in the vapor deposition space 30 of the vapor deposition chamber 3, that is, the second preferred embodiment is another embodiment of the vacuum barrel plating machine of the present invention, which provides different options for the user.

參閱圖7、8,本發明真空滾鍍機之第三較佳實施例,大致上是與上一個實施例相同,皆包含一蒸鍍裝置2、一蒸鍍艙3,及一引弧器4。Referring to Figures 7 and 8, a third preferred embodiment of the vacuum barrel plating machine of the present invention is substantially the same as the previous embodiment, and includes an evaporation device 2, an evaporation chamber 3, and an arc runner 4. .

不相同之處在於,該真空滾鍍機更包含一滾筒5,該滾筒5呈中空狀且可相對該蒸鍍裝置2轉動地設於該蒸鍍艙3之蒸鍍空間30中,而且該蒸鍍裝置2之腔體座22、靶體23、靶材24、冷卻水路單元25與磁控單元26皆位於該滾筒5內。The vacuum barreling machine further includes a drum 5 which is hollow and is rotatably disposed in the vapor deposition space 30 of the vapor deposition chamber 3 with respect to the vapor deposition device 2, and the steaming The cavity seat 22 of the plating apparatus 2, the target body 23, the target material 24, the cooling water path unit 25, and the magnetron unit 26 are all located in the drum 5.

在本實施例中,該滾筒5為圓筒形設計,將至少一待鍍物51放置於該滾筒5中,並固定於該滾筒5內側,使該待鍍物51可隨該滾筒5轉動而移動(如圖9所示),並被該靶材24蒸鍍;另外,該滾筒5亦可為六角形或其他多邊形之設計,當待鍍物51放置於該滾筒5中,將使該待鍍物51長時間在該滾筒5內滾動並被該靶材24蒸鍍,達到均勻攪拌的作用,進而獲得較穩定的鍍膜性質。In this embodiment, the drum 5 has a cylindrical design, and at least one object to be plated 51 is placed in the drum 5 and fixed inside the drum 5 so that the object to be plated 51 can rotate with the drum 5 Moving (as shown in FIG. 9) and being vapor-deposited by the target 24; in addition, the drum 5 may also be of a hexagonal or other polygonal design, and when the object to be plated 51 is placed in the drum 5, the The plating material 51 rolls in the drum 5 for a long time and is vapor-deposited by the target material 24 to achieve uniform stirring, thereby obtaining relatively stable coating properties.

籍由該滾筒5的設計,使待鍍物51直接放置於該滾筒5中而不需再進行裝料與卸料的作業,亦可將較多數量的待鍍物51放置於該滾筒5中,達到批次量產的效果,可有效節省時間及提高作業效率,而且,籍由滾筒5的轉動,達到均勻鍍膜的作用,進而獲得較穩定的鍍膜性質。By the design of the drum 5, the object to be plated 51 is placed directly in the drum 5 without the need of loading and unloading, and a larger number of objects to be plated 51 can be placed in the drum 5. The effect of batch mass production can effectively save time and improve work efficiency, and, by the rotation of the drum 5, the effect of uniform coating can be achieved, thereby obtaining relatively stable coating properties.

歸納上述,本發明之真空滾鍍機,利用將該平板狀的靶體23鑲嵌於該腔體座22上,不僅可提高覆設於該陰極部231之靶材24的面積來擴大蒸鍍範圍,更可免除習知多弧式靶源的設計,簡化後續拆裝與保養上的問題,再者,藉由將待鍍物51直接放置於該滾筒5中而不需再進行裝料與卸料作業,可有效節省時間及提高作業效率,而且,藉由滾筒5的轉動,達到均勻鍍膜的作用,進而獲得較穩定 的鍍膜性質,故確實能達到本發明之目的。As described above, in the vacuum barrel plating machine of the present invention, by inserting the flat target body 23 on the cavity holder 22, not only the area of the target member 24 coated on the cathode portion 231 can be increased, but the vapor deposition range can be expanded. Moreover, the design of the conventional multi-arc target source can be eliminated, and the problems of subsequent disassembly and maintenance can be simplified. Furthermore, by placing the object to be plated 51 directly in the drum 5, it is unnecessary to carry out loading and unloading. The operation can effectively save time and improve work efficiency, and, by the rotation of the drum 5, the effect of uniform coating is achieved, thereby obtaining stability. The coating properties are indeed capable of achieving the object of the present invention.

惟以上所述者,僅為本發明之較佳實施例而已,當不能以此限定本發明實施之範圍,即大凡依本發明申請專利範圍及發明說明內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。The above is only the preferred embodiment of the present invention, and the scope of the invention is not limited thereto, that is, the simple equivalent changes and modifications made by the scope of the invention and the description of the invention are All remain within the scope of the invention patent.

2‧‧‧蒸鍍裝置2‧‧‧Vapor deposition unit

21‧‧‧基座21‧‧‧Base

22‧‧‧腔體座22‧‧‧ cavity seat

220‧‧‧大氣空間220‧‧‧Atmospheric space

23‧‧‧靶體23‧‧‧ Target

231‧‧‧陰極部231‧‧‧ Cathode

232‧‧‧陽極部232‧‧‧Anode

24‧‧‧靶材24‧‧‧ Target

25‧‧‧冷卻水路單元25‧‧‧Cooling waterway unit

26‧‧‧磁控單元26‧‧‧Magnetic control unit

3‧‧‧蒸鍍艙3‧‧‧vapor plating compartment

30‧‧‧蒸鍍空間30‧‧‧vapor deposition space

31‧‧‧艙體31‧‧‧ cabin

32‧‧‧艙門32‧‧‧hatch

33‧‧‧滑軌33‧‧‧Slide rails

4‧‧‧引弧器4‧‧‧ Arc starter

5‧‧‧滾筒5‧‧‧Roller

51‧‧‧待鍍物51‧‧‧Battery to be plated

圖1是一剖視圖,說明習知真空滾鍍機;圖2是一剖視圖,說明習知另一真空滾鍍機;圖3是一剖視圖,說明本發明蒸鍍裝置之第一較佳實施例;圖4是一剖視圖,輔助說明圖3艙門開啟之態樣;圖5是一剖視圖,說明本發明蒸鍍裝置之第二較佳實施例;圖6是一剖視圖,輔助說明圖5艙門開啟之態樣;圖7是一橫向剖視圖,說明本發明真空滾鍍機之第三較佳實施例;圖8是一縱向剖視圖,輔助說明圖7真空滾鍍機之態樣;及圖9是一縱向剖視圖,說明該第三較佳實施例之滾筒轉動後之態樣。Figure 1 is a cross-sectional view showing a conventional vacuum barrel plating machine; Figure 2 is a cross-sectional view showing another conventional vacuum barrel plating machine; Figure 3 is a cross-sectional view showing a first preferred embodiment of the evaporation apparatus of the present invention; Figure 4 is a cross-sectional view for assistance in explaining the opening of the door of Figure 3; Figure 5 is a cross-sectional view showing a second preferred embodiment of the vapor deposition device of the present invention; Figure 6 is a cross-sectional view of the door opening of Figure 5 Figure 7 is a transverse cross-sectional view showing a third preferred embodiment of the vacuum barrel plating machine of the present invention; Figure 8 is a longitudinal cross-sectional view for assisting the description of the vacuum barreling machine of Figure 7; and Figure 9 is a A longitudinal sectional view showing the state after the rotation of the drum of the third preferred embodiment.

2‧‧‧蒸鍍裝置2‧‧‧Vapor deposition unit

21‧‧‧基座21‧‧‧Base

22‧‧‧腔體座22‧‧‧ cavity seat

220‧‧‧大氣空間220‧‧‧Atmospheric space

23‧‧‧靶體23‧‧‧ Target

231‧‧‧陰極部231‧‧‧ Cathode

232‧‧‧陽極部232‧‧‧Anode

24‧‧‧靶材24‧‧‧ Target

25‧‧‧冷卻水路單元25‧‧‧Cooling waterway unit

26‧‧‧磁控單元26‧‧‧Magnetic control unit

3‧‧‧蒸鍍艙3‧‧‧vapor plating compartment

30‧‧‧蒸鍍空間30‧‧‧vapor deposition space

31‧‧‧艙體31‧‧‧ cabin

32‧‧‧艙門32‧‧‧hatch

33‧‧‧滑軌33‧‧‧Slide rails

4‧‧‧引弧器4‧‧‧ Arc starter

5‧‧‧滾筒5‧‧‧Roller

Claims (11)

一種蒸鍍裝置,設置於一真空滾鍍機之蒸鍍艙中,該蒸鍍艙具有一蒸鍍空間,該蒸鍍裝置包含:一基座,設於該蒸鍍艙上;一腔體座,連設於該基座並容置於該蒸鍍艙之蒸鍍空間中,且該腔體座界定有一呈常壓狀態的大氣空間;一靶體,概呈平板狀且鑲嵌於該腔體座上,並具有一突露於該蒸鍍艙之蒸鍍空間中並供一靶材覆設的陰極部,及一與該陰極部相反方向且位於該大氣空間中的陽極部;及一磁控單元,設於該靶體之陽極部上且位於大氣空間中。 An evaporation device is disposed in a vapor deposition chamber of a vacuum barrel plating machine, the evaporation chamber has an evaporation space, the evaporation device comprises: a base disposed on the evaporation chamber; a cavity seat Connected to the susceptor and housed in the evaporation space of the vapor deposition chamber, and the cavity seat defines an atmospheric space in a normal pressure state; a target body is generally flat and embedded in the cavity a cathode portion having a vapor deposition space exposed in the vapor deposition chamber and covering a target, and an anode portion opposite to the cathode portion and located in the atmosphere; and a magnetic portion The control unit is disposed on the anode portion of the target body and located in the atmospheric space. 依據申請專利範圍第1項所述之蒸鍍裝置,該蒸鍍裝置係可拆卸地設置於該真空滾鍍機之蒸鍍艙中。 The vapor deposition device according to claim 1, wherein the vapor deposition device is detachably disposed in the vapor deposition chamber of the vacuum barrel machine. 依據申請專利範圍第1或2項所述之蒸鍍裝置,更包括一設於該靶體中的冷卻水路單元。 The vapor deposition device according to claim 1 or 2, further comprising a cooling water passage unit provided in the target body. 一種真空滾鍍機,包含:一蒸鍍艙,具有一蒸鍍空間;一引弧器,設於該蒸鍍空間中並可產生電弧;及一蒸鍍裝置,包括一基座,設於該蒸鍍艙上,一腔體座,連設於該基座並容置於該蒸鍍艙之蒸鍍空間中,且該腔體座界定有一呈常壓狀態的大氣空間, 一靶體,概呈平板狀且鑲嵌於該腔體座上,並具有一突露於該蒸鍍艙之蒸鍍空間中並供一靶材覆設的陰極部,及一與該陰極部相反方向且位於該大氣空間中的陽極部,其中,該引弧器可以與該靶材對應接觸。 A vacuum barrel plating machine, comprising: a vapor deposition chamber having an evaporation space; an arc starter disposed in the evaporation space and capable of generating an arc; and an evaporation device comprising a base disposed on the a vapor chamber, a cavity seat connected to the base and housed in the evaporation space of the vapor deposition chamber, and the cavity seat defines an atmospheric space in a normal pressure state. a target body having a flat shape and being embedded in the cavity holder, and having a cathode portion exposed in the vapor deposition space of the vapor deposition chamber and covering a target, and a cathode opposite to the cathode portion An anode portion oriented in the atmosphere, wherein the arc runner is in corresponding contact with the target. 依據申請專利範圍第4項所述之真空滾鍍機,其中,該蒸鍍裝置係可拆卸地設置於該真空滾鍍機之蒸鍍艙中。 The vacuum barrel plating machine according to claim 4, wherein the vapor deposition device is detachably disposed in the vapor deposition chamber of the vacuum barrel machine. 依據申請專利範圍第4或5項所述之真空滾鍍機,其中,該蒸鍍裝置更包括一設於該靶體中的冷卻水路單元。 The vacuum barrel plating machine according to claim 4 or 5, wherein the vapor deposition apparatus further comprises a cooling water passage unit provided in the target body. 依據申請專利範圍第6項所述之真空滾鍍機,其中,該蒸鍍裝置更包括一設於該靶體之陽極部上且位於大氣空間中的磁控單元。 The vacuum barrel plating machine according to claim 6, wherein the vapor deposition apparatus further comprises a magnetron unit disposed on the anode portion of the target body and located in the atmospheric space. 依據申請專利範圍第7項所述之真空滾鍍機,更包含一滾筒,該滾筒概呈中空狀且可相對該蒸鍍裝置轉動地設於該蒸鍍艙之蒸鍍空間中。 The vacuum barrel plating machine according to claim 7, further comprising a drum which is substantially hollow and rotatably disposed in the vapor deposition space of the vapor deposition chamber relative to the vapor deposition device. 依據申請專利範圍第8項所述之真空滾鍍機,其中,該蒸鍍艙具有一艙體,及一可封閉該艙體的艙門。 The vacuum barrel plating machine of claim 8, wherein the vapor deposition chamber has a cabin and a door that encloses the cabin. 依據申請專利範圍第9項所述之真空滾鍍機,其中,該蒸鍍裝置係設於該艙門上且與該艙門連動。 The vacuum barrel plating machine according to claim 9, wherein the vapor deposition device is disposed on the door and interlocked with the door. 依據申請專利範圍第9項所述之真空滾鍍機,其中,該蒸鍍裝置係設置於與該艙門相對側之艙體上。 The vacuum barrel plating machine according to claim 9, wherein the vapor deposition device is disposed on a cabin opposite to the hatch.
TW97133557A 2008-09-02 2008-09-02 Vacuum barrel and vacuum deposition machine for vacuum plating machine TWI400344B (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5730847A (en) * 1993-03-15 1998-03-24 Kabushiki Kaisha Kobeseikosho Arc ion plating device and arc ion plating system
TWI228544B (en) * 2003-06-27 2005-03-01 Ind Tech Res Inst Method for forming transparent conducting oxide film by arc ion plating

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5730847A (en) * 1993-03-15 1998-03-24 Kabushiki Kaisha Kobeseikosho Arc ion plating device and arc ion plating system
TWI228544B (en) * 2003-06-27 2005-03-01 Ind Tech Res Inst Method for forming transparent conducting oxide film by arc ion plating

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