TWI398965B - Light emitting diode chip and package structure thereof - Google Patents

Description

Light-emitting diode chip and package structure thereof

The invention relates to a light emitting diode chip and a package structure thereof, in particular to a white light emitting diode chip and a package structure thereof.

In recent years, white light-emitting diodes have been the most optimistic and most popular products in the world. It has the advantages of small size, no heat radiation, low power consumption, long life, good reaction speed and environmental protection effect. It can solve many problems that are difficult to overcome in the past, so it has been regarded by European and American scientists as two. Illumination source of the eleventh century.

Please refer to FIG. 1 , which is a schematic cross-sectional view of a conventional white light emitting diode package structure. As shown in FIG. 1 , the conventional white light emitting diode package structure 10 includes a colloid 14 having a recess 12 , a conductive frame 16 embedded in the colloid 14 , a blue diode chip 18 , and a fluorescent light . The colloid 20 and the two metal wires 22 are provided. The blue LED chip 18 is disposed on the colloid 14 in the recess 12, and the metal wire 22 electrically connects the blue diode wafer 18 between the conductive racks 16. Moreover, the phosphor colloid 20 seals the blue LED wafer 18 on the colloid 14, and the phosphor colloid 20 comprises a phosphor for converting the blue light emitted by the blue LED wafer 18 into yellow light. White light can be produced by using the blue light of the blue LED chip 18 in combination with the yellow light converted by the phosphor colloid 20.

However, the blue light emitted by the blue diode chip at different angles passes through the phosphor colloid of different thicknesses, so that the white light emitted by the white light diode package structure at different angles will be composed of different intensity blue light and different intensity yellow light. Mixed. Different colors of blue light mixed with different intensity of yellow light will produce white light of different color temperatures, that is, white light emitted at different angles may be yellowish or blueish.

The main object of the present invention is to provide a light emitting diode chip and a package structure thereof to solve the above problem of uneven color temperature.

To achieve the above objective, the present invention provides a light emitting diode chip including a substrate, a first light emitting unit disposed on the substrate, and a first light converting layer. The first light conversion layer covers the first light emitting unit and extends to cover the sidewall of the first light emitting unit, and the first light conversion layer has a uniform thickness, so that the color temperature difference of the light generated by the light emitting diode chip at different angles is less than 1500K. And the first light conversion layer does not contact the sidewall of the substrate.

To achieve the above object, the present invention further provides a light emitting diode chip including a substrate, a light emitting unit disposed on the substrate, and a light conversion layer. The illuminating unit includes a P-type contact electrode disposed on the substrate, an N-type contact electrode, and a current blocking layer disposed between the P-type contact electrode and the N-type contact electrode, and the current blocking layer is disposed on the N-type Directly below the contact electrode. The light conversion layer covers the light emitting unit and extends to cover the sidewall of the light emitting unit.

To achieve the above objective, the present invention provides a light emitting diode package structure including a lead frame, a light emitting diode chip, a wire, and an encapsulant. The lead frame has a first pin, a second pin and a carrying portion connected to the first pin, and the LED chip is disposed on the carrying portion. The LED has a first electrode and a second electrode, and the first electrode is electrically connected to the first pin. The wire is electrically connected to the second electrode to the second pin, and the encapsulant encapsulates the LED chip, the carrying portion, the portion of the first pin and the portion of the second pin, and the encapsulant system is a transparent colloid. The light emitting diode chip includes a substrate, a first light emitting unit disposed on the substrate, and a first light converting layer. The first light conversion layer covers the first light emitting unit and extends to cover the sidewall of the first light emitting unit, and the first light conversion layer has a uniform thickness, so that the color temperature difference of the light generated by the light emitting diode chip at different angles is less than 1500K. And the first light conversion layer does not contact the sidewall of the substrate.

The light-emitting diode chip of the present invention has a light-converting layer of uniform thickness, and the light-converting layer covers the light-emitting unit that generates light and extends to cover the sidewall of the light-emitting unit, so that the color temperature of the white light generated by the light-emitting diode chip does not follow The angle varies, and the color temperature of the light emitted by the conventional LED package structure is different depending on the angle.

Please refer to FIG. 2 and FIG. 3 , FIG. 2 is a schematic cross-sectional view of a light-emitting diode wafer according to a first embodiment of the present invention, and FIG. 3 is a top view of the light-emitting diode wafer according to the first embodiment of the present invention. . As shown in FIGS. 2 and 3 , the LED chip 100 includes a substrate 102 , a first light emitting unit 104 , and a first light conversion layer 106 . The first light emitting unit 104 is disposed on the substrate 102, and the first light converting layer 106 covers the first light emitting unit 104 and extends to cover the sidewall of the first light emitting unit 104, and the first light converting layer 106 does not contact the sidewall of the substrate 102. In other words, on one side of the light-emitting diode wafer 100, the side length of the substrate 102 is greater than the side length of the first light conversion layer 106 minus one-half times the side length of the first light-emitting unit 104. Moreover, the shortest distance of the side of the first light emitting unit 104 from the side of the substrate 102 is preferably less than 1/10 times the length of the side of the substrate 102. In addition, the LED wafer 100 can be a rectangular parallelepiped or a cube structure. In this embodiment, the substrate 102 is a substrate having conductive properties, such as a doped semiconductor substrate or a germanium substrate having a conductive plug penetrating through the substrate to electrically charge the first light emitting unit 104 disposed on the substrate 102. Sex is connected to the outside world, but not limited to this.

In addition, the first light emitting unit 104 of the embodiment is a vertical LED (VLED) wafer including gallium nitride (GaN) and its related nitride, and can generate blue light, but the present invention Not limited to this. The first light emitting unit 104 includes a P-type contact electrode 108 disposed on the substrate 102, a P-type doped layer 110 disposed on the P-type contact electrode 108, and an active layer disposed on the P-type doped layer 110 ( An active layer 112, an N-type doped layer 114 disposed on the active layer 112, and an N-type contact electrode 116 disposed on the N-type doped layer 114. Wherein, the N-type contact electrode 116 is not covered by the first light conversion layer 106, or a part of the N-type contact electrode 116 is exposed, so that the N-type contact electrode 116 can be wire-bonded during packaging. Electrically connected to the wire holder. In addition, the LED wafer 100 further includes a metal pad 118, such as a metal pad, solder ball, solder paste or silver paste, for bonding the P-type contact electrode 108 of the first light-emitting unit 104. On the substrate 102.

In addition, the first light conversion layer 106 of the embodiment includes a colloid 120 and a phosphor powder 122, and the phosphor powder 122 is evenly dispersed in the colloid 120. The phosphor powder 122 converts the blue light emitted by the first light emitting unit 104 into yellow light, and then the yellow light converted by the blue light mixed phosphor powder of the first light emitting unit 104 can constitute white light. However, the present invention is not limited thereto, and the color of the light generated by the first light emitting unit may be ultraviolet light, and the first light conversion layer includes at least three fluorescent materials, wherein the color of the light converted by the fluorescent material includes red, Green, blue or a combination of the above. In the present embodiment, the phosphor powder 122 has a plurality of phosphor particles, and the median average particle size of the phosphor particles is about less than 10 microns, and the phosphor powder 122 includes a garnet (garnet). a fluorescent substance of the structure, such as yttrium aluminum garnet (YAG), which absorbs light having a wavelength smaller than blue and is attenuated by a non-radiative form to emit yellow light, but The invention is not limited thereto. It should be noted that the first light conversion layer 106 is uniformly disposed on the first light emitting unit 104 and the sidewall of the first light emitting unit 104, and has a uniform thickness d, which is approximately between 15 micrometers (μm) and 80 micrometers. Or approximately 3 to 20 times the thickness of the first light emitting unit 104. Thereby, the first light 124 of the first light emitting unit 104 at different angles of the light emitting diode chip 100 and the light emitted in the second direction 126 pass through approximately the same thickness. The first light conversion layer 106, that is, the amount of phosphor powder encountered in the first direction 124 and the second direction 126 is about the same, so the phosphor powder 122 of the first light conversion layer 106 is in the first direction 124. The intensity of the yellow light converted in the second direction 126 is about the same, and the light intensity of the first light-emitting unit 104 after passing through the first light-converting layer 106 in the first direction 124 and the second direction 126 is about the same, that is, The color temperature of the white light emitted from the LED chip 100 at different angles is about the same, and the color temperature difference of the light emitted from the LED chip 100 at different angles is less than 500K, and preferably less than 500K. In addition, it is worth mentioning that the method for fabricating a light-emitting diode wafer of the present invention firstly sets a plurality of first light-emitting units 104 on a substrate 102, and then deposits or coats the first light-converting layer 106. Finally, each of the LED wafers 100 is diced into a single particle. Therefore, the first light conversion layer 106 of the LED array 100 provided by the present invention does not extend to the sidewall of the substrate 102. Moreover, since the LED array 100 provided by the present invention already has the first light conversion layer 106 that converts the color of the light, it is not necessary to perform the dispensing or coating process of the phosphor layer in the subsequent packaging. The packaging step of the LED component can be saved.

Further, the first light conversion layer of the present embodiment is not limited to converting blue light to yellow light, and the first light conversion layer is not limited to only one layer structure. Please refer to FIG. 4 and FIG. 5 . FIG. 4 and FIG. 5 are schematic cross-sectional views showing other embodiments of the LED chip according to the first embodiment of the present invention. As shown in FIG. 4, the first light conversion layer 106 of the LED array 150 of the present embodiment includes two phosphor layers 152 and 154, and each of the phosphor layers 152 and 154 can absorb the first light emitting unit 104. The blue light is emitted and the light with green and red is converted separately. Therefore, the combination of blue, green, and red light produces white light. In addition, the light-emitting unit of the present invention is not limited to generate blue light, and may also generate ultraviolet light. As shown in FIG. 5, the light generated by the first light-emitting unit 104 of the light-emitting diode wafer 160 of another embodiment is ultraviolet light. The first light conversion layer 106 of the LED array 160 of the present embodiment includes at least three phosphor layers 162, 164, and 166, and the colors of the light converted by the respective phosphor layers include red, green, and blue. Or the combination of the above, the phosphor layers 162, 164, and 166 can emit red, green, and blue light by absorbing light of higher energy of red, green, and blue light, and attenuating the non-radiative form. . It is to be noted that the present embodiment further includes a filter layer 168 disposed on the first light conversion layer 106 for filtering out ultraviolet light, so that the light generated by the first light emitting unit 104 encounters the filter layer 168. It will be reflected or absorbed without being shot to the outside world.

The light-emitting diode wafer of the present invention is not limited to the above-described first embodiment. Please refer to FIG. 6. FIG. 6 is a schematic cross-sectional view of a light emitting diode chip according to a second embodiment of the present invention. In the following embodiments, the same components as those in the first embodiment are denoted by the same reference numerals, and the same component structures are not described again. As shown in FIG. 6, the first light-emitting unit 104 of the LED array 200 of the present embodiment further includes a current blocking layer 202 disposed on the P-type doped layer. 110 is between the P-type contact electrode 108 and around the P-type contact electrode 108, and is in direct contact with the P-type contact electrode 108. In the present embodiment, the current blocking layer 202 surrounds a portion of the P-type contact electrode 108 in direct contact with the P-type doped layer 110, but the invention is not limited thereto. In addition, the N-type contact electrode 116 of the first light-emitting unit 104 of the present embodiment is disposed on the N-type doped layer 114 and located at a vertical position corresponding to the current blocking layer 202, that is, the current blocking layer 202 is located at the N-type contact electrode. Just below 116. The current blocking layer 202 is used to prevent current from passing through the periphery of the first light emitting unit 104, thereby preventing the active layer 112 located around the first light emitting unit 104 from generating blue light, and only generating the active layer 112 near the center of the first light emitting unit 104. The blue light is emitted from the center of the light-emitting diode wafer 200 by placing the N-type contact electrode 116 at a position corresponding to the current blocking layer 202, and is not emitted toward the sidewall of the light-emitting diode wafer 200. The current blocking layer 202 can be an N-type doped region to form a reverse PN junction between the P-type contact electrode 108 and the P-type doped layer 110, so that the current entering from the P-type contact electrode 108 does not flow. The current blocks the layer 202 and forces current to flow to the center of the first light emitting unit 104, thereby increasing the intensity of the light emitted from the LED array 200 upward. Thereby, the arrangement of the current blocking layer 202 can also avoid the loss of light absorbed by the shielding layer only when the shielding layer is disposed on the sidewall of the first light emitting unit 104. It is to be noted that, because the current blocking layer 202 can reduce the intensity of the light emitted by the first light emitting unit 104 in the second direction 126, the first light converting layer 106 of the embodiment does not extend to cover the entire first light emitting unit 104. And may extend only to the sidewall of the P-type doping layer 110 above the current blocking layer 202, and does not cover the current blocking layer 202, but is not limited thereto, the first light conversion layer is provided when the current blocking layer 202 is provided in the present invention. 106 may also extend to cover the entire first light emitting unit 104.

In addition, the first light-emitting unit of the present invention is not limited to a vertical light-emitting diode wafer, and may be other types of light-emitting diode wafers. Please refer to FIG. 7. FIG. 7 is a cross-sectional view showing a light emitting diode chip according to a third embodiment of the present invention. As shown in FIG. 7 , the first light-emitting unit 104 of the LED array 300 of the present embodiment is a thin-film flip chip LED (TFFCLED) wafer. The P-type contact electrode 108 of the first light-emitting unit 104 is disposed on the substrate 102, and the N-type contact electrode 116 of the first light-emitting unit 104 is also disposed on the substrate 102. The P-type doped layer 110 is disposed on the P-type contact electrode 108, and the active layer 112 is disposed on the P-type doped layer 110, and the N-type doped layer 114 is disposed on the active layer 112 and the N-type contact electrode 116. The N-type contact electrode 116 is not in contact with the P-type doped layer 110 and the active layer 112 for electrically connecting the N-type doped layer 114 to the substrate 102. The P-type contact electrode 108 is disposed between the P-type doped layer 110 and the substrate 102 for electrically connecting the P-type doped layer 110 to the substrate 102. In addition, the substrate 102 of the LED array 300 of the present embodiment has two conductive plugs 302 extending through the substrate 102, and each of the conductive plugs 302 is electrically connected to the P-type contact electrode 108 and the N-type contact electrode 116, respectively. In addition, the LED chip 300 of the present embodiment further includes a plurality of metal pads 304 disposed between the first light emitting unit 104 and each of the conductive plugs 302 to connect the N-type contact electrode 116 and the P-type contact electrode 108. They are electrically connected to the respective conductive plugs 302, respectively. The metal pad 304 is a metal adhesive such as a gold pad, a solder ball, a solder paste or a silver paste. It should be noted that, compared with the vertical LED chip of the first embodiment, the first light conversion layer 106 of the present embodiment does not need to expose an electrode, but the P-type contact electrode 108 and the N-type contact electrode. 116 is directly bonded to the substrate 102. In addition, the LED of the third embodiment may also have a current blocking layer. Please refer to FIG. 8. FIG. 8 is a cross-sectional view showing another embodiment of the LED of the third embodiment of the present invention. . As shown in FIG. 8, the LED array 350 of the present embodiment includes a current blocking layer 352 disposed between the P-type doping layer 110 and the P-type contact electrode 108 and located at the P-type contact electrode 108. It is surrounded and directly contacts the P-type contact electrode 108.

In addition, please refer to FIG. 9, which is a cross-sectional view of a light-emitting diode wafer according to a fourth embodiment of the present invention. As shown in FIG. 9, the first light emitting unit 104 of the LED array 400 of the present embodiment is a flip chip LED (FCLED) wafer, and the first The light emitting unit 104 further includes a transparent substrate 402 disposed on the N-type doping layer 114. The transparent substrate 402 has translucency and may be a gallium arsenide (GaAs), gallium nitride, sapphire or tantalum carbide (SiC) substrate, but is not limited thereto.

Further, the light-emitting diode wafer of the present invention is not limited to including only one light-emitting unit. Please refer to FIG. 10, which is a cross-sectional view of a light emitting diode chip according to a fifth embodiment of the present invention. As shown in FIG. 10, the LED assembly 500 of the present embodiment further includes at least one second illumination unit 502 disposed on the substrate 102, and the first light conversion layer 106 covers the first embodiment. A light emitting unit 104 and a second light emitting unit 502 extend to cover sidewalls of the second light emitting unit 502. In this embodiment, the first light emitting unit 104 and the second light emitting unit 502 can be a vertical light emitting diode chip, a thin film flip chip diode chip, or a flip chip light emitting diode chip. In addition, the present invention is not limited to the light-emitting diode wafer of FIG. 10, and the first light-emitting unit and the second light-emitting unit of the present invention may further include the above-described current blocking layer as compared with the fifth embodiment. In addition, please refer to FIG. 11, which is a cross-sectional view of a light-emitting diode wafer according to a sixth embodiment of the present invention. As shown in the eleventh embodiment, the LED array 550 of the present embodiment further includes at least one second light conversion layer 552 covering the second light emitting unit 502 and extending to cover the second light emitting unit. The sidewalls of 502, that is, the different light-emitting units are covered by different light-converting layers.

In addition, the light emitting diode chip of the present invention can also be driven by an alternating current. Please refer to FIG. 12, which is a cross-sectional view of a light-emitting diode wafer according to a seventh embodiment of the present invention. As shown in FIG. 12, the first light-emitting unit 602 and the second light-emitting unit 604 of the LED array 600 of the present embodiment are electrically connected to each other as compared with the sixth embodiment. The first light-emitting unit 602 and the second light-emitting unit 604 in this embodiment are exemplified by a thin film flip-chip light-emitting diode wafer, but are not limited thereto, and may be other forms of light-emitting diode wafers. The P-type contact electrode 606 of the first light-emitting unit 602 is electrically connected to the N-type contact electrode 612 of the second light-emitting unit 604 as one of the first electrodes 614 of the light-emitting diode wafer 600. Moreover, the N-type contact electrode 608 of the first light-emitting unit 602 is electrically connected to the P-type contact electrode 610 of the second light-emitting unit 604 and serves as the second electrode 616 of the light-emitting diode chip 600. Therefore, when the first electrode 614 of the LED array 600 provides a positive voltage and the second electrode 616 provides a negative voltage, the first illumination unit 602 generates white light. On the contrary, the first electrode 602 of the LED chip 600 provides a negative voltage, and when the second electrode 604 provides a positive voltage, the second light-emitting unit 604 generates a white light, so the LED chip 600 provides an AC voltage. In this case, white light can be generated by driving the first light emitting unit 602 and the second light emitting unit 604, respectively, and can be used for AC driving. In addition, the light emitting diode chip of the present invention may also have a plurality of light emitting units, and the plurality of light emitting units may be electrically connected to form a Wheatstone bridge, and the substrate may have a plurality of interconnect structures to be electrically connected. Connect each light unit.

In addition, the present invention also provides a package structure for packaging the above-described light emitting diode wafer. Please refer to FIG. 13. FIG. 13 is a cross-sectional view showing a light emitting diode package structure according to an embodiment of the present invention. As shown in FIG. 13, the LED package structure 700 includes a lead frame 702, a light emitting diode chip 704, a wire 706, and an encapsulant 708. The lead frame 702 has a first pin 710 , a second pin 712 , and a carrying portion 714 connected to the first pin 710 . The LED substrate 704 of the present embodiment may be the LED of the above embodiments, and has a first electrode 716 and a second electrode 718. The light-emitting diode wafer 704 is bonded to the carrying portion 714 of the lead frame by a conductive adhesive 720, so that the first electrode 716 of the LED chip 704 is electrically connected to the first pin 710, and the wire 706 is utilized. The second electrode 718 of the LED chip 704 is electrically connected to the second pin 712. The encapsulant 706 encapsulates the LED chip 704, the carrier portion 714, a portion of the first pin 710, and a portion of the second pin 712. It should be noted that since the LED chip 704 itself can generate white light, the LED package structure 700 of the present invention does not need to be additionally dispensed or coated with a phosphor layer on the LED wafer 704. And the encapsulant 708 is a transparent colloid.

In summary, the light-emitting diode chip of the present invention has a light-converting layer of uniform thickness, and the light-converting layer covers the light-emitting unit that generates light and extends to cover the sidewall of the light-emitting unit, so that the white light generated by the light-emitting diode chip The color temperature does not change with the angle, so that the color temperature of the light emitted by the conventional LED package structure is different depending on the angle. In addition, the present invention further provides a current blocking layer between the P-type doped layer and the P-type contact electrode of the light-emitting unit in the light-emitting diode chip, and corresponds to the vertical position of the N-type contact electrode to force the light into the light. The current of the diode chip flows to the center of the light-emitting unit, thereby preventing the side wall of the light-emitting unit from emitting light, thereby only covering the light-converting layer on the light-emitting unit, so that the light-emitting diode wafer can generate light of uniform color temperature, and It is emitted toward the top of the light-emitting diode chip.

The above are only the preferred embodiments of the present invention, and all changes and modifications made to the scope of the present invention should be within the scope of the present invention.

10. . . White light emitting diode package structure

12. . . Groove

14. . . colloid

16. . . Conductive frame

18. . . Blue diode chip

20. . . Fluorescent colloid

twenty two. . . Metal wire

100. . . Light-emitting diode chip

102. . . Substrate

104. . . First lighting unit

106. . . First light conversion layer

108. . . P-type contact electrode

110. . . P-doped layer

112. . . Active layer

114. . . N-doped layer

116. . . N-type contact electrode

118. . . Metal pad

120. . . colloid

122. . . Fluorescent powder

124. . . First direction

126. . . Second direction

150. . . Light-emitting diode chip

152. . . Fluorescent layer

154. . . Fluorescent layer

160. . . Light-emitting diode chip

162. . . Fluorescent layer

164. . . Fluorescent layer

166. . . Fluorescent layer

168. . . Filter layer

200. . . Light-emitting diode chip

202. . . Current blocking layer

300. . . Light-emitting diode chip

302. . . Conductive plug

304. . . Metal pad

350. . . Light-emitting diode chip

352. . . Current blocking layer

400. . . Light-emitting diode chip

402. . . Transparent substrate

500. . . Light-emitting diode chip

502. . . Second lighting unit

550‧‧‧Light Emitter Wafer

552‧‧‧Second light conversion layer

600‧‧‧Light Emitting Diode Wafer

602‧‧‧ first lighting unit

604‧‧‧second lighting unit

606‧‧‧P type contact electrode

608‧‧‧N type contact electrode

610‧‧‧P type contact electrode

612‧‧‧N type contact electrode

614‧‧‧First electrode

616‧‧‧second electrode

700‧‧‧Light emitting diode package structure

702‧‧‧ lead frame

704‧‧‧Light Diode Wafer

706‧‧‧ wire

708‧‧‧Package colloid

710‧‧‧First pin

712‧‧‧second pin

714‧‧‧Loading Department

716‧‧‧First electrode

718‧‧‧second electrode

720‧‧‧ conductive adhesive

Figure 1 is a schematic cross-sectional view of a conventional white light emitting diode package structure.

Fig. 2 is a schematic cross-sectional view showing a light-emitting diode wafer according to a first embodiment of the present invention.

Figure 3 is a top plan view of a light-emitting diode wafer according to a first embodiment of the present invention.

4 and 5 are cross-sectional views showing other embodiments of the light emitting diode chip according to the first embodiment of the present invention.

Figure 6 is a cross-sectional view showing a light-emitting diode wafer according to a second embodiment of the present invention.

Figure 7 is a cross-sectional view showing a light-emitting diode wafer according to a third embodiment of the present invention.

Figure 8 is a cross-sectional view showing another embodiment of a light-emitting diode wafer according to a third embodiment of the present invention.

Figure 9 is a cross-sectional view showing a light-emitting diode wafer according to a fourth embodiment of the present invention.

Figure 10 is a cross-sectional view showing a light-emitting diode wafer according to a fifth embodiment of the present invention.

Figure 11 is a cross-sectional view showing a light-emitting diode wafer according to a sixth embodiment of the present invention.

Figure 12 is a cross-sectional view showing a light-emitting diode wafer according to a seventh embodiment of the present invention.

Figure 13 is a cross-sectional view showing a light emitting diode package structure according to an embodiment of the present invention.

100. . . Light-emitting diode chip

102. . . Substrate

104. . . First lighting unit

106. . . First light conversion layer

108. . . P-type contact electrode

110. . . P-doped layer

112. . . Active layer

114. . . N-doped layer

116. . . N-type contact electrode

118. . . Metal pad

120. . . colloid

122. . . Fluorescent powder

124. . . First direction

126. . . Second direction

Claims (31)

A light-emitting diode chip includes: a substrate; a first light-emitting unit disposed on the substrate; and a first light-converting layer covering the first light-emitting unit and extending to cover a sidewall of the first light-emitting unit And the first light conversion layer has a uniform thickness, wherein the first light conversion layer on the upper surface of the first light emitting unit has the same thickness as the first light conversion layer on the sidewall of the first light emitting unit The color temperature difference of the light generated by the light emitting diode chip at different angles is less than 1500K, and the first light conversion layer does not contact the sidewall of the substrate. The light-emitting diode chip of claim 1, wherein the light-emitting diode wafer has a color temperature difference of less than 500K at different angles. The light-emitting diode chip of claim 1, wherein the thickness of the first light conversion layer is approximately 3 to 20 times the thickness of the first light-emitting unit. The light-emitting diode wafer of claim 1, wherein the first light-converting layer has a thickness of approximately 15 μm to 80 μm. The light-emitting diode chip according to claim 1, wherein a shortest distance between a side of the first light-emitting unit and a side of the substrate is less than 1/10 times a length of a side of the substrate. The light-emitting diode chip of claim 1, wherein the first light conversion layer comprises a colloid and a phosphor powder, and the phosphor powder has a plurality of fluorescent particles, and the median of the fluorescent particles The average particle size is approximately less than 10 microns. The light-emitting diode chip of claim 6, wherein the phosphor powder comprises a phosphor material having a garnet structure. The light-emitting diode chip of claim 1, wherein the light generated by the first light-emitting unit is blue, and the light converted by the first light-converting layer is yellow. The light-emitting diode chip of claim 1, wherein the light generated by the first light-emitting unit is blue, and the first light-converting layer comprises two phosphor layers, and the phosphor layers are converted. The light is green and red. The light-emitting diode chip of claim 1, wherein the light generated by the first light-emitting unit is ultraviolet light, and the first light conversion layer comprises at least three fluorescent layers, and the fluorescent layers are converted. The color of the light includes red, green, blue or a combination of the above. The illuminating diode chip of claim 10, further comprising a filter layer disposed on the first light conversion layer for filtering out ultraviolet light generated by the first illuminating unit. The light-emitting diode chip of claim 1, wherein the light generated by the first light-emitting unit is ultraviolet light, and the first light-converting layer comprises at least three fluorescent materials, and the fluorescent materials are converted. The color of the light includes red, green, blue or a combination of the above. The illuminating diode chip of claim 1, wherein the first illuminating unit comprises: a P-type contact electrode disposed on the substrate; an N-type contact electrode disposed on the substrate; a P-type doping a layer disposed on the P-type contact electrode; an active layer disposed on the P-type doped layer; and an N-type doped layer disposed on the active layer and the N-type contact electrode. The illuminating diode chip of claim 13, wherein the first illuminating unit further comprises a transparent substrate disposed on the N-type doping layer. The illuminating diode chip of claim 13 further comprising two conductive plugs extending through the substrate and electrically connecting the N-type contact electrode and the P-type contact electrode, respectively. The illuminating diode chip of claim 15 further comprising a plurality of metal pads disposed between the first illuminating unit and the conductive plugs to connect the N-type contact electrode and the P-type contact electrode They are electrically connected to the respective conductive plugs. The light emitting diode chip of claim 1, further comprising at least one second light emitting sheet The element is disposed on the substrate. The illuminating diode chip of claim 17, wherein the first light converting layer covers the second illuminating unit and extends to cover a sidewall of the second illuminating unit. The illuminating diode chip of claim 17, further comprising at least one second light conversion layer covering the second illuminating unit and extending to cover a sidewall of the second illuminating unit. The light-emitting diode chip of claim 17, wherein one of the first light-emitting units is electrically connected to one of the second light-emitting units and the N-type contact electrode is used as the light-emitting diode chip. a first electrode, and one of the N-type contact electrodes of the first light-emitting unit is electrically connected to one of the P-type contact electrodes of the second light-emitting unit to serve as a second electrode of the light-emitting diode chip, so that the light is emitted The diode chip is used for AC drive. The illuminating diode chip of claim 1, wherein the first illuminating unit comprises: a P-type contact electrode disposed on the substrate; a P-type doped layer disposed on the P-type contact electrode; An active layer is disposed on the P-type doped layer; an N-type doped layer is disposed on the active layer; and an N-type contact electrode is disposed on the N-type doped layer, and the N-type contact electrode Not covered by the first light conversion layer. The illuminating diode chip of claim 21, wherein the first illuminating unit further comprises a current blocking layer disposed between the P-type doping layer and the P-type contact electrode, and located at the N-type contact electrode Just below it. The light-emitting diode chip of claim 1, wherein the light generated by the light-emitting diode chip is white. An LED package structure includes: a lead frame having a first pin, a second pin, and a carrier connected to the first pin; a light emitting diode chip disposed on the carrier And the first LED is electrically connected to the first lead, the LED body comprises: a substrate; a first a light emitting unit disposed on the substrate; and a first light converting layer covering the first light emitting unit and extending to cover sidewalls of the first light emitting unit, and the first light converting layer has a uniform thickness, wherein the first light converting layer has a uniform thickness The first light conversion layer on the upper surface of the first light emitting unit has the same thickness as the first light conversion layer on the sidewall of the first light emitting unit, so that the light generated by the light emitting diode chip at different angles The color temperature difference is less than 1500K, and the first light conversion layer does not contact the sidewall of the substrate; a wire electrically connecting the second electrode to the second pin; An encapsulating body encapsulating the LED chip, the carrying portion, a portion of the first pin and a portion of the second pin, and the encapsulant system is a transparent colloid. The light emitting diode package structure of claim 24, wherein the light generated by the light emitting diode chip is white. The light emitting diode package structure according to claim 24, wherein the color difference of the light generated by the light emitting diode chip at different angles is less than 500K. A light-emitting diode chip includes: a substrate; an light-emitting unit disposed on the substrate; and the light-emitting unit includes a P-type contact electrode, an N-type contact electrode, and a P-type contact electrode disposed on the substrate a current blocking layer between the contact electrode and the N-type contact electrode, wherein the current blocking layer is disposed directly under the N-type contact electrode; and a light conversion layer covering the light emitting unit and extending to cover a sidewall of the light emitting unit The light conversion layer on the upper surface of the light emitting unit has the same thickness as the light conversion layer on the sidewall of the light emitting unit. The illuminating diode chip of claim 27, wherein the illuminating unit further comprises a P-type doping layer, the clogging layer being disposed between the P-type doping layer and the P-type contact electrode and directly contacting the P-type doping layer P-type contact electrode. The illuminating diode chip of claim 28, wherein the illuminating unit further comprises: an active layer disposed on the P-type doped layer; an N-type doped layer disposed on the active layer; An N-type contact electrode is disposed on the N-type doped layer, and the N-type contact electrode is not covered by the first light conversion layer. The light-emitting diode chip of claim 27, wherein the light conversion layer has a uniform thickness such that a color temperature difference of light generated by the light-emitting diode wafer at different angles is less than 1500 K, and the light conversion layer is not in contact. The side wall of the substrate. The light-emitting diode chip of claim 30, wherein the light-emitting diode wafer has a color temperature difference of less than 500K at different angles.