TWI398964B - A organic-inorganic lighting device and a method for fabricating the same - Google Patents

Description

Organic inorganic light-emitting element and manufacturing method thereof

The present invention relates to a light-emitting technique, and more particularly to an organic-inorganic light-emitting element and a method of fabricating the same.

Since the commercialization of the light-emitting diode in the 1960s, due to its high shock resistance, long life, low power consumption and low heat generation, its application range covers everyday products such as home appliances and various types. Indicator light or light source of the instrument. In recent years, due to the development of multi-color and high brightness, the application range has been directed toward outdoor displays, such as large outdoor display billboards and traffic lights. Red, blue and green are the three primary colors of full color. For full-color outdoor display panels, high-brightness blue or green LEDs are indispensable.

Organic light-emitting diode displays are particularly important in the development of flat panel displays. As the name suggests, organic light-emitting diode displays use Organic Light Emitting Diodes as the light source, and they can be divided into two types according to the light-emitting materials used: one is a small molecule type, and the other is Polymer type. The organic light-emitting diode has the following advantages in conformity with the characteristics of the multimedia era display, such as no viewing angle limitation, low manufacturing cost, high response speed (more than 100 times that of liquid crystal), power saving, and can be used for a portable machine. DC drive, light weight, and miniaturization and thinning of hardware devices, etc. Therefore, organic electroluminescent elements have great potential for development in flat panel display systems, making organic light-emitting diode displays expected to be lower A new generation of flat panel displays.

However, in the development of organic light-emitting diodes, most of the organic materials are favorable for hole conduction, and are not favorable for electron conduction, so it is easy to cause the number of electronic hole pairs of components to be unbalanced, which makes the component performance difficult to improve. However, in the case of inorganic light-emitting diodes, in inorganic materials, it is advantageous for electron conduction, and is disadvantageous for hole conduction. In addition, in the development of general inorganic light-emitting diodes, it is necessary to consider complicated and expensive crystal growth equipment, and the process temperature is mostly above 300 degrees Celsius, so the production cost is quite high, for example, Generally known techniques if desired in 4-phenylene A zinc oxide film grown on an organic layer formed of vinylidene (MEHPPV) is usually subjected to a high-cost electron beam evaporation method in a vacuum environment.

Accordingly, the present invention has been made in view of the above problems, and an organic inorganic light-emitting element and a method of fabricating the same are provided to solve the problems caused by the prior art.

The main object of the present invention is to provide an organic inorganic light-emitting device and a method for fabricating the same, which are characterized in that a p-type organic conductive thin film layer is combined with an n-type inorganic zinc oxide micro-nanowire array, wherein the organic thin film is formed by a spin coating method. The nanowire array is formed by hydrothermal method. This method can solve the problem that the organic material is not conducive to the transmission of electrons and the complicated and expensive high temperature vacuum crystal growth process of the inorganic diode, and the production cost can be greatly reduced.

In order to achieve the above object, the present invention provides an organic inorganic light-emitting device comprising a conductive substrate, and a p-type organic conductive thin film layer, a sub-layer and an n-type zinc oxide micro-nanowire array are sequentially disposed on the conductive substrate, and An electrode layer is further disposed on the zinc oxide micro-nano line array.

The invention also provides a method for fabricating an organic inorganic light-emitting device. First, a conductive substrate is provided, and a p-type organic conductive thin film layer is formed on the conductive substrate by spin coating, and then a sub-layer is formed on the organic conductive thin film layer. The seed layer is used to form an n-type zinc oxide micro-nanowire array by hydrothermal method, and finally an electrode layer is formed on the zinc oxide micro-nano line array.

For a better understanding and understanding of the structural features and the achievable effects of the present invention, please refer to the preferred embodiment and the detailed description.

In order to solve the problem of the organic material in the electron transport and the production cost of the inorganic material, the present invention proposes an organic inorganic light-emitting element, which will be referred to below in FIG.

The structure of the present invention comprises an insulating substrate 10 on which a first electrode layer is sequentially disposed 12. An organic conductive thin film layer 14 and a sub-layer 16, wherein a seed layer 16 is provided with a zinc oxide micro-nanowire array 18, and a second electrode is disposed at the top end of the zinc oxide micro-nanowire array 18. The layer 22 is further provided with an insulating layer 20 between the second electrode layer 22 and the seed layer 16 in order to prevent the second electrode layer 22 from directly contacting the seed layer 16. The insulating layer 20 is located in the zinc oxide micro Each of the wires of the nanowire array 18 is in a space between each other, and the thickness of the insulating layer 20 must be equal to or smaller than the length of each of the wires, so that the second electrode layer 22 can directly contact the array of zinc oxide micro-nanowires 18 surface. Here, the length of the insulating layer 20 is lower than the length of the wire of the zinc oxide micro-nano line array 18 as an example.

Referring to FIG. 2 at the same time, the top end of each of the wires of the zinc oxide micro-nanowire array 18 of the present invention is observed by an electron microscope, and it is found that it is not only the direction in which the single vertical seed layer 16 grows upward, but a plurality of In the direction of growth, the gap between each other at the top end of each of the wires of the zinc oxide micro-nanowire array 18 is relatively small, so that the second electrode layer 22 can be disposed only on the zinc oxide micro-nanowire array 18 At the top end, it is not easy to directly contact the seed layer 16.

If the pitch of each of the wires of the zinc oxide micro-nanowire array 18 is originally small, the second electrode layer 22 can be easily disposed at the top end of the zinc oxide micro-nanowire array 18 without being exposed to the seed. Layer 16, in this case, is also not designed to provide an insulating layer 20 between the second electrode layer 22 and the seed layer 16, still allowing the light-emitting element to perform well.

In addition, the insulating substrate 10 and the first electrode layer 12 thereon may be replaced by a conductive substrate made of a material such as germanium or a soft conductive material, so that the organic conductive thin film layer 14 can be directly disposed on the conductive substrate.

In the above materials, the material of the insulating substrate 10 may be sapphire, glass, quartz or soft insulating material; the materials of the first and second electrode layers 12 and 22 may be gold, silver, nickel, aluminum, platinum, and transparent. Electrode material, indium tin oxide (ITO), gallium-indium-tin oxide (GITO), zinc-indium-tin oxide (ZITO), fluorine-doped tin oxide , FTO), zinc oxide, aluminum oxide zinc [AZO (Al: ZnO)] or indium zinc oxide (IZO); the material of the insulating layer 20 may be poly (methyl methacrylate (PMMA)], poly Styrene [poly (styrene)], spin-on glass (SOG), cerium oxide (SiO ₂ ), tantalum nitride (Si ₃ N ₄ ); the material of the seed layer 16 may be zinc oxide, gold, tin or cobalt.

In addition, the material of the organic conductive thin film layer 14 may be a polymer material, a small molecular material, an organic semiconductor material capable of helping a current to pass through, a fluorescent light emitting molecule, a fluorescent light emitting molecule doped phosphorescent emitting molecule or a fluorescent emitting molecule doped organic The insulating molecule, wherein the organic insulating molecule is polymethyl methacrylate or polystyrene; the organic semiconductor material is poly(3-hexylthiophene (P3HT)], [poly(3-octylthiophene, P3OT) Poly(N-vinylcarbazole, PVK), poly[2-methoxy-5-[2-ethylhexyloxy]-[1,4-phenylene [vinyl]][poly[2-methoxy-5-(2-ethylhexyloxy)-(1,4-phenylenevinylene), MEHPPV]], poly[2-methoxy-5-(3',7'-B Alkyl octyloxy)-I4-phenylvinyl][poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene, MDMOPPV]], polyfluorine [poly(fluorine), PF] or N'-diphenyl-N,N'-bis(3-methylphenyl)-[1-1'-biphenyl]-4,4'-diamine [N'-diphenyl-N, N'-bis[3-methylphenyl]-[1,1'-biphenyl]-[4,4'-diamine], TPD].

In the dimension design of each of the above components, the thickness of the organic conductive thin film layer 14 is between 10 nm and 1000 nm; the thickness of the seed layer 16 is between 1 nm and 100 nm; the thickness of the insulating layer 20 Between 1 nm and 50 microns; each of the wires of the zinc oxide micro-nanowire array 18 has a gap distance between 0.5 nm and 500 microns, and the cross-sectional width of each of the wires in contact with the seed layer 16 Between 2 nm and 10 microns, each of the wires has a length between 2 nm and 50 microns; if each wire length of the zinc oxide micro-nano line array 18 is added to the thickness of the seed layer 16, Its total length is between 15 nm and 50 microns.

After referring to the first embodiment of Fig. 1, please refer to the manufacturing method, please refer to the figures 3(a) to 3(e), firstly, as shown in Fig. 3(a), an insulating substrate is provided. 10, and a first electrode layer 12, an organic conductive thin film layer 14 and a sub-layer 16 are sequentially formed on the insulating substrate 10. The method of forming the organic conductive thin film layer 14 may be a spin coating method, The dip coating method or the ink jet printing method, and the solution used in the above method is chloroform, dichloromethane, toluene, tetrahydrfuran, 1,2-two. 1,2-dichlorobenzene, 1,4-dichlorobenzene, chlorobenzene or n-hexane.

Further, the method of forming the seed layer 16 is a spin coating method, a dip coating method, an evaporation method, a sputtering method, an atomic layer deposition method, an electrochemical deposition method, a pulsed laser deposition method, or a metal organic chemical vapor deposition method. For example, if the material of the seed layer 16 is gold, tin or cobalt, the seed layer 16 is formed by depositing gold, tin or cobalt micro-nano particles on the organic conductive film by evaporation or sputtering. On layer 14, wherein the particle size of the gold micro-nanoparticles can be designed to be between 2 nm and 10 microns. If the material of the seed layer 16 is the zinc oxide, gold, tin or cobalt, the method of forming the seed layer 16 is to deposit the micro-nano particles of gold, tin, cobalt or zinc oxide by dip coating or spin coating. On the organic conductive film layer 14, wherein the particle size of the gold micro-nano particles can be designed to be between 2 nm and 10 μm, and the particle size of the zinc oxide micro-nano particles is between 2 nm and 10 μm, and The solution taken when using the dip coating method or the spin coating method is isopropanol, methanol, ethyl alcohol, glycerol or C which can change the hydrophilicity of the seed layer 16. Alcohol (propanol).

Next, as shown in FIG. 3(b), the zinc oxide micro-nanowire array 18 is formed thereon by using the seed layer 16, and the formation method thereof may be a hydrothermal method, a thermal evaporation method, or a thermal evaporation method. Chemical vapor deposition, molecular beam epitaxy, anodized aluminum porous template (AAO), electrochemical method.

In the next step, as shown in FIG. 3(c), an insulating layer 20 is formed on the seed layer 16, and the insulating layer 20 covers the seed layer 16 and the zinc oxide micro-nanowire array 18 by a spin coating method. , dip coating method, vapor deposition method, sputtering, atomic layer deposition, electrochemical deposition method, pulsed laser deposition method, metal organic chemical vapor deposition method Metalorganic chemical vapor deposition). Then, as shown in FIG. 3(d), the thickness of the insulating layer 20 is etched to less than or equal to the zinc oxide micro-nanowire by etching. The length of the wire of array 18. Here, the length of the insulating layer 20 is smaller than the length of the wire of the zinc oxide micronanoline array 18 as an example.

Finally, as shown in FIG. 3(e), a second electrode layer 22 is formed on the surface of the top end of the zinc oxide micro-nanowire array 18, and the insulating layer 20 is disposed between the second electrode layer 22 and the seed layer 16. And located in the gap between each of the wires of the zinc oxide micro-nanowire array 18.

When the light-emitting element of the present invention lacks the insulating layer 20, the steps of FIGS. 3(c) and 3(d) may be omitted.

In addition, in the step of providing an insulating substrate 10 and forming a first electrode layer 12 in the above FIG. 3(a), a conductive substrate may be directly provided instead, and the organic conductive thin film layer 14 is directly formed on the conductive substrate. .

Please refer to FIG. 4, which is a second embodiment of the present invention, which differs from FIG. 1 in that the first electrode layer 12 is divided into a plurality of first electrode blocks 24, and each of the first electrode blocks The 24 series are disposed at equal intervals, and the organic conductive thin film layer 14 and the seed layer 16 are also divided into a plurality of organic blocks 26 and seed blocks 28, and the zinc oxide micro-nano line array 18 is divided into complex array zinc oxide microarrays. 30. The second electrode layer 22 is divided into a plurality of second electrode blocks 32. An organic block 26, a sub-block 28 and a group of zinc oxide are sequentially disposed above each of the first electrode blocks 24. The microarray 30, the insulating layer 20 covers the seed layer 16 and the insulating substrate 10, and the top surface of the insulating layer 20 is lower than the top end of the zinc oxide micro-nano line array 18.

Please refer to the manufacturing method of the second embodiment of the present invention. As shown in FIGS. 5(a) to 5(e), the forming method is almost the same as that of the first embodiment, and the difference is as follows. As shown in FIG. 5(a), the first electrode layer 12 is formed on the insulating substrate 10 by a plurality of first electrode blocks 24, and each of the first electrode blocks 24 is disposed at equal intervals, in addition to each An organic block 26 and a sub-block 28 are sequentially formed above a first electrode block 24. Next, as shown in Fig. 5(b), a set of zinc oxide microarrays 30 are formed on each of the seed blocks 28. Further, as shown in Fig. 5(c), an insulating layer 20 is formed on the seed layer 16, and the insulating layer 20 covers the seed layer 16, the insulating substrate 10, and the zinc oxide micro-nanowire array 18. Then, as shown in FIG. 5(d), the top surface of the insulating layer 20 is etched to a level lower than that of the zinc oxide micron. At the top of the rice noodle array 18. Finally, as shown in Fig. 5(e), a second electrode block 32 is formed on the surface of the top end of each of the zinc oxide microarrays 30.

Please refer to FIG. 6 , which is a third embodiment of the present invention. The structure is slightly different from the second embodiment of FIG. 3 , and the difference is only that the insulating substrate 10 and the first electrode layer 12 are electrically conductive. Substituted by the substrate 34, the conductive substrate 34 has a plurality of conductive blocks 36. The conductive blocks 36 are arranged at equal intervals. Each of the conductive blocks 36 is sequentially provided with an organic block 26 and a sub-block 28 and A set of zinc oxide microarrays 30.

The manufacturing method of the third embodiment is as shown in FIGS. 7(a) to 7(e). First, as shown in FIG. 7(a), a conductive substrate 34 having a plurality of conductive blocks 36 is provided. The conductive blocks 36 are arranged side by side at equal intervals, and then an organic block 26 and a sub-block 28 are sequentially formed over each of the conductive blocks 36. The steps from the seventh (b) to the seventh (e) are the same as the steps from the fifth (b) to the fifth (e), and therefore will not be described again.

The process of actually preparing the organic inorganic light-emitting device of the present invention is described below. Referring to FIGS. 8(a) to 8(e), first, as shown in FIG. 8(a), a conductive substrate 40 made of ITO is provided. . Then, an organic conductive thin film layer 42 made of p-type P3HT is formed on the conductive substrate 40 by spin coating, and then the entire sample is placed in an environment of 120 degrees Celsius for 2 hours for thermal annealing. The solvent in the sample evaporates. After the thermal annealing is completed, the zinc oxide micro-nanoparticles are laid on the organic conductive thin film layer 42 by a spin coating method in combination with an isopropyl alcohol solution, and then heated to 120 ° C to form the seed layer 44. The reason why the glycerin solution is used is that the general organic conductive thin film layer 42 is hydrophobic, and the zinc oxide seed layer 44 is a hydrophilic material, which are easily repelled and are not easily bonded together. Therefore, in the preparation of the zinc oxide seed layer 44, the hydrophilicity of the seed layer 44 can be changed by adding an alcohol substance, so that it can be successfully formed on the organic conductive thin film layer 42, and this method can be used for Any substrate, which greatly enhances the applicability of the components.

After the seed layer 44 is formed, as shown in Fig. 8(b), the entire sample can be placed in an aqueous solution of zinc nitrate and hexamethylenetetramine, and a low temperature of 90 degrees Celsius is applied for 3 hours. To perform hydrothermal methods, so that the seed layer 44 An n-type zinc oxide micro-nanowire array 46 is formed thereon.

In the next step, as shown in FIG. 8(c), an insulating layer 48 made of PMMA is formed on the seed layer 44 by spin coating so as to cover the seed layer 44 and the zinc oxide micro-nanowire array 46 at the same time. The insulating layer 46 electrically isolates each of the wires of the zinc oxide micro-nanowire array 46.

Next, as shown in Fig. 8(d), the insulating layer 48 is etched using oxygen plasma so that the top surface of the insulating layer 48 is lower than the top end of the zinc oxide micro-nano line array 46. Finally, as shown in Fig. 8(e), an electrode layer 50 made of aluminum is formed at the top end of the zinc oxide micro-nanowire array 46. It can be seen from the above that all the processes of the present invention are low-cost and low-temperature solution processes, so the technology of the present invention is not limited to the rigid substrate, and is still applicable to the flexible substrate, and can be manufactured in a large area, so that the application range thereof is greatly improved. . In addition, the invention is not limited by the mismatch between the crystal constant of the crystal growth material and the substrate, and completely solves the bottleneck encountered in the growth of the crystal, which is different from the expensive, complicated and small-area long crystal process, and greatly reduces the production cost. Therefore, it has considerable practical value.

Please refer to FIG. 9 , which is an X-ray diffraction diagram of the zinc oxide micro-nano line array of the sample prepared after the above actual preparation. The environmental data used herein includes copper (Cu) Kα radiation as the X-ray source. The operating voltage and current were 40 kV and 25 m amps, respectively, and the scanning rate was 3 degrees/min. In the figure, the diffraction peaks are located at 2δ(Theta)=31.74°, 34.44°, 36.26°, 47.48°, 56.66°, 62.93°, and the above angles correspond to the crystal faces (100), (002), ( 101), (102), (110), (103). It can be confirmed that the zinc oxide micro-nanowire array of the present invention is a hexagonal fiber-optic structure, and each of the wires of the zinc oxide micro-nanoline array does not have a single vertical seed layer that grows upward. There are many directions for growing up.

Please refer to Fig. 10, the long and short dash line is the measurement data of the sample after the actual preparation described above, wherein the thickness of the organic conductive film layer is 240 nm, hereinafter referred to as sample A; the solid line is the measurement data of the sample after the actual preparation described above, wherein The thickness of the organic conductive thin film layer is 300 nm, hereinafter referred to as sample B; the long broken line is measurement data of a sample of an organic conductive thin film layer of P3HT and an aluminum electrode layer sequentially grown on an ITO substrate, hereinafter referred to as sample C. As can be seen from the figure, the driving voltages of sample A and sample B are both about 2 volts, which is lower than the driving voltage of sample C, and at about 10 volts, the current of sample A is greater than the current of sample B, and the current of sample B is larger than that of sample. C current. The reason for these phenomena is as follows. One is that the mobility of the carrier in the heterojunction of the zinc oxide micro-nanowire array and the organic conductive thin film layer is higher than that in the organic conductive thin film layer, and the second is the carrier. The injection area in the heterojunction between the zinc oxide micro-nanowire array and the organic conductive thin film layer is also larger than that in the organic conductive thin film layer. For the above two reasons, the current of the sample A is larger than that of the sample C. The current of the sample C is higher than the driving voltage of the sample A. In addition, the current of the sample A is larger than the current of the sample B because the thickness of the organic conductive thin film layer of the sample is such that the sample B is thin.

To better understand the relationship between sample A and sample B, please continue to refer to Figure 11, where the long dashed line represents sample A, the solid line represents sample B, and the long and short dashed lines represent sample C. In order to illuminate the three samples, the applied DC voltage was 10 volts. As can be seen from the figure, the luminescence intensity of sample A is 1.5 times that of sample C, and the wavelength of the strongest luminescence intensity of sample A is 652 nm, and the wavelength of the strongest luminescence intensity of sample C is 670 nm. This is because the growth of the zinc oxide nanowire array on the organic conductive thin film layer causes the electronic structure of the surface of the organic conductive thin film layer to be changed, and this change is due to the hydroxide ion group of the P3HT molecule and the zinc oxide nanowire array. Interacted by the interaction, so when the carrier is covered by the interface of the zinc oxide nanowire array and the organic conductive thin film layer, the blue-shifted wavelength and the enhanced luminous intensity appear as shown. . In addition, the presence of a zinc oxide nanowire array can enhance carrier injection to increase the probability of electron hole cladding. The light-emitting element of such a sample A can be applied to an electroluminescent element made of white, red, blue or green light.

However, in contrast to sample B, the wavelength of its strongest luminescence intensity is the same as that of sample C. The results seen in the figure can be summarized as follows: the position where the electron hole is covered is related to the thickness of the organic conductive film layer, and Since the thickness of the organic conductive thin film layer of the sample B was thicker than that of the sample A, the carrier of the sample B could not be overlapped with the interface of the zinc oxide nanowire array and the organic conductive thin film layer, and similarly, no blue shift occurred.

Please refer to Figure 12, where the dotted line represents the measurement data of sample D, sample D Similar to the structure of the above sample C, the difference is only that the material of the organic conductive film layer is replaced by P3HT by PF; the solid line represents the measurement data of the sample E, and the sample E is similar to the structure of the sample A described above, and the difference lies only in the organic conductive film. The material of the layer is PF instead of P3HT. As can be seen from the figure, when the voltage is equal to 10 volts, the current of sample E is about 5 times that of sample D.

Please continue to refer to Figure 13, the dashed line represents the measurement data of sample D, and the solid line represents the measurement data of sample E. For the two samples to emit light, the applied DC voltage is 12 volts. As can be seen from the figure, the peak wavelength of the luminescence intensity of sample D is 426 nm, 450 nm, 491 nm, and the peak wavelength of the luminescence intensity of sample E is 483 nm, 566 nm, so this sample E can be applied to white light. On the electroluminescent element, another sample D was compared with the sample E, and it was found that the sample E produced a wavelength red-shifted phenomenon with respect to the sample D. The reason for this phenomenon is that during the hydrothermal process of sample E, the hydroxide ion group on the surface of zinc oxide has reacted with PF, and the polymer chain of PF and the array of zinc oxide micro-nanowires When the surfaces are bonded together, such a binding reaction causes a decrease in luminescence energy and a red shift phenomenon.

In summary, the organic-inorganic light-emitting device and the manufacturing method thereof provided by the invention can solve the problem that the organic material is not conducive to the transmission of electrons and the complicated and expensive high-temperature vacuum crystal growth process of the inorganic diode, and the method can be greatly improved. Reducing the cost of production is quite practical.

The above is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, so that the shapes, structures, features, and spirits described in the claims of the present invention are equally varied and modified. All should be included in the scope of the patent application of the present invention.

10‧‧‧Insert substrate

12‧‧‧First electrode layer

14‧‧‧Organic conductive film layer

16‧‧‧ seed layer

18‧‧‧Zinc Oxide Micro-Nano Array

20‧‧‧Insulation

22‧‧‧Second electrode layer

24‧‧‧First electrode block

26‧‧‧Organic blocks

28‧‧‧Seed blocks

30‧‧‧Zinc oxide microarray

32‧‧‧Second electrode block

34‧‧‧Electrical substrate

36‧‧‧Conducting blocks

38‧‧‧Electrode block

40‧‧‧Electrical substrate

42‧‧‧Organic conductive film layer

44‧‧‧ seed layer

46‧‧‧Zinc oxide micro-nano line array

48‧‧‧Insulation

50‧‧‧electrode layer

Fig. 1 is a perspective view showing the structure of a first embodiment of the present invention.

Figure 2 is a scanning electron micrograph of the zinc oxide micro-nanowire array of the present invention.

3(a) to 3(e) are cross-sectional views showing the steps of the first embodiment of the present invention.

Fig. 4 is a perspective view showing the structure of a second embodiment of the present invention.

5(a) to 5(e) are cross-sectional views showing the steps of the second embodiment of the present invention.

Figure 6 is a perspective view showing the structure of a third embodiment of the present invention.

7(a) to 7(e) are cross-sectional views showing the steps of the third embodiment of the present invention.

8(a) to 8(e) are cross-sectional views showing the steps of the steps of actually fabricating a light-emitting element of the present invention.

Figure 9 is an X-ray diffraction pattern of the zinc oxide micro-nanowire array of the present invention.

Fig. 10 is a graph showing the comparison of current and voltage with the structure of the light-emitting element of the organic electroconductive thin film layer formed by poly-3-hexylthiophene in the present invention and the structure of the remaining light-emitting elements.

Fig. 11 is a graph showing the structure of a light-emitting element in which an organic conductive thin film layer is formed of poly-3-hexylthiophene according to the present invention, and the light-emitting intensity and wavelength of the remaining light-emitting element structure.

Fig. 12 is a graph showing the comparison of current and voltage with the structure of the light-emitting element in which the organic conductive thin film layer is formed of polyfluoride, and the structure of the remaining light-emitting elements.

Fig. 13 is a graph showing the comparison of the normalized luminous intensity and the wavelength of the structure of the light-emitting element in which the organic conductive thin film layer is formed of polyfluoride, and the structure of the remaining light-emitting elements.

10‧‧‧Insert substrate

12‧‧‧First electrode layer

14‧‧‧Organic conductive film layer

16‧‧‧ seed layer

18‧‧‧Zinc Oxide Micro-Nano Array

20‧‧‧Insulation

22‧‧‧Second electrode layer

Claims (37)

An organic inorganic light-emitting device comprising: a conductive substrate composed of a plurality of conductive blocks; an organic conductive film layer on the conductive blocks; and a sub-layer disposed on the organic conductive film layer; An array of zinc oxide micro-nanowires disposed on the seed layer; and a second electrode layer composed of a plurality of electrode layer blocks disposed on the array of zinc oxide micro-nanowires. The organic inorganic light-emitting device according to claim 1, wherein the second electrode layer is made of gold, silver, nickel, aluminum, platinum, transparent electrode material, indium tin oxide (ITO), gallium indium tin oxide ( Gallium-indium-tin oxide (GITO), zinc-indium-tin oxide (ZITO), fluorine-doped tin oxide (FTO), zinc oxide, aluminum oxide zinc [AZO (Al: ZnO)] or indium zinc oxide (IZO). The organic inorganic light-emitting device of claim 1, further comprising an insulating layer disposed between the second electrode layer and the seed layer and located in each of the zinc oxide micro-nano line arrays The wires are in the gaps of each other, and the second electrode layer is in direct contact with the surface of the array of zinc oxide micro-nanowires. The organic inorganic light-emitting device according to claim 3, wherein the material of the insulating layer is poly(methyl methacrylate (PMMA), polystyrene [poly(styrene)], spin coating Glass material (SOG), cerium oxide (SiO ₂ ), tantalum nitride (Si ₃ N ₄ ). The organic inorganic light-emitting device according to claim 3, wherein the thickness of the insulating layer is less than or equal to the length of each of the wires of the zinc oxide micro-nanowire array. The organic inorganic light-emitting device according to claim 3, wherein the insulating layer has a thickness of between 1 nm and 50 μm. The organic-inorganic light-emitting device according to claim 1, wherein the material of the organic conductive thin film layer is a polymer material, a small molecular material, an organic semiconductor material, a fluorescent light emitting molecule, and a fluorescent light emitting molecule doped phosphorescent emitting molecule. Or fluorescent luminescent molecules doped Machine insulation molecules. The organic inorganic light-emitting element according to claim 7, wherein the organic insulating molecule is polymethyl methacrylate or polystyrene. The organic-inorganic light-emitting device according to claim 7, wherein the organic semiconductor material is poly(3-hexylthiophene (P3HT), poly(3-octylthiophene, P3OT), poly[ N-vinylcarbazole [PV], poly[2-methoxy-5-[2-ethylhexyloxy]-[1,4-phenylene vinylene] ][poly[2-methoxy-5-(2-ethylhexyloxy)-(1,4-phenylenevinylene), MEHPPV]], poly[2-methoxy-5-(3',7'-ethaneoctyloxy) )-1,4-phenylvinyl][poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene, MDMOPPV]], polyfluorine [poly(fluorine), PF] Or N'-diphenyl-N,N'-bis(3-methylphenyl)-[1-1'-biphenyl]-4,4'-diamine [N'-diphenyl-N, N' -bis[3-methylphenyl]-[1,1'-biphenyl]-[4,4'-diamine], TPD]. The organic-inorganic light-emitting device according to claim 1, wherein the material of the seed layer is zinc oxide, gold, tin or cobalt. The organic-inorganic light-emitting device according to claim 1, wherein the conductive substrate is made of tantalum or a soft conductive material. The organic-inorganic light-emitting device of claim 1, wherein each of the wires of the zinc oxide micro-nanowire array has a length of between 2 nm and 50 μm. The organic-inorganic light-emitting device according to claim 1, wherein each of the wires of the zinc oxide micro-nanowire array is in contact with the seed layer in a cross-sectional width of between 2 nm and 10 μm. The organic-inorganic light-emitting device of claim 1, wherein each of the wires of the zinc oxide micro-nanowire array has a gap distance of between 0.5 nm and 500 μm. An organic inorganic light-emitting element according to claim 1, wherein the organic conductive material The thickness of the film layer is between 10 nm and 1000 nm. The organic-inorganic light-emitting device of claim 1, wherein the seed layer has a thickness of between 1 nm and 100 nm. The organic-inorganic light-emitting device of claim 1, wherein the length of each of the wire lengths of the zinc oxide micro-nanowire array plus the thickness of the seed layer is between 15 nm and 50 μm. A method for fabricating an organic inorganic light-emitting device, comprising the steps of: providing a conductive substrate, forming an organic conductive thin film layer on the conductive substrate; forming a sub-layer on the organic conductive thin film layer; using the seed layer thereon Forming an array of zinc oxide micro-nanowires; forming an insulating layer on the seed layer, and etching the thickness of the insulating layer to a length less than or equal to a wire length of the zinc oxide micro-nanoline array by etching, and the insulating a layer is located in a gap between each of the wires of the zinc oxide micro-nanowire array; and a second electrode layer is formed on the insulating layer and the zinc oxide micro-nanoline array, which is in direct contact with the zinc oxide micron The surface of the rice noodle array. The method for fabricating an organic-inorganic light-emitting device according to claim 18, wherein the step of providing the conductive substrate comprises the steps of: providing an insulating substrate; and forming a first electrode layer on the insulating substrate for the An organic conductive film layer is formed thereon. The method for fabricating an organic-inorganic light-emitting device according to claim 19, wherein the insulating substrate is made of sapphire, glass, quartz or a soft insulating material. The method for fabricating an organic-inorganic light-emitting device according to claim 19, wherein the first and second electrode layers are made of gold, silver, nickel, aluminum, platinum, a transparent electrode material, or indium tin oxide (ITO). , gallium-indium-tin oxide (GITO), zinc-indium-tin oxide (ZITO), fluorine-doped tin oxide (FTO), zinc oxide, aluminum oxide Zinc [AZO (Al: ZnO)] or indium zinc oxide (IZO). The method for producing an organic-inorganic light-emitting device according to claim 18, wherein the method of forming the insulating layer is spin coating, dip coating, evaporation, or sputtering. Sputtering, atomic layer deposition, electrochemical deposition, plused laser deposition, metalorganic chemical vapor deposition. The organic inorganic light-emitting device according to claim 18, wherein the material of the insulating layer is poly(methyl methacrylate (PMMA), polystyrene [poly(styrene)], spin coating Glass material (SOG), cerium oxide (SiO ₂ ), tantalum nitride (Si ₃ N ₄ ). The method for fabricating an organic-inorganic light-emitting device according to claim 18, wherein the seed layer is formed by a spin coating method, a dip coating method, an evaporation method, a sputtering method, an atomic layer deposition method, or an electrochemical deposition method. Method, pulsed laser deposition method, metal organic chemical vapor deposition method. The method for producing an organic-inorganic light-emitting device according to claim 18, wherein the material of the seed layer is zinc oxide, gold, tin or cobalt. The method for fabricating an organic-inorganic light-emitting device according to claim 25, wherein when the material of the seed layer is gold, tin or cobalt, the seed layer is formed by evaporation or sputtering. The gold, tin or cobalt micro-nanoparticles are deposited on the organic conductive film layer. The method for fabricating an organic-inorganic light-emitting device according to claim 25, wherein when the material of the seed layer is the zinc oxide, gold, tin or cobalt, the seed layer is formed by dip coating or rotation. The gold, tin, cobalt or zinc oxide micro-nanoparticles are deposited on the organic conductive thin film layer by a coating method. The method for producing an organic-inorganic light-emitting device according to claim 27, wherein the solution used in the dip coating method and the spin coating method is isopropanol, methanol, or ethyl alcohol. ,Glycerol (glycerol) or propanol. The method for producing an organic-inorganic light-emitting device according to claim 27, wherein the zinc oxide micro-nanoparticle has a particle diameter of between 2 nm and 10 μm. The method for producing an organic-inorganic light-emitting device according to claim 26, wherein the gold micro-nanoparticle has a particle diameter of from 2 nm to 10 μm. The method for producing an organic-inorganic light-emitting device according to claim 18, wherein the method for forming the zinc oxide micro-nanoline array is a hydrothermal method, a thermal evaporation method, a chemical gas method. Chemical vapor deposition, molecular beam epitaxy, anodized aluminum porous template (AAO), electrochemical method. The method for producing an organic-inorganic light-emitting device according to claim 18, wherein the method of forming the organic conductive thin film layer is a spin coating method, a dip coating method, or an inkjet printing method. The method for producing an organic-inorganic light-emitting device according to claim 32, wherein the spin coating method, the dip coating method, or the solution used in the inkjet printing method is chloroform or dichloromethane. , toluene, tetrahydrfuran, 1,2-dichlorobenzene, 1,4-dichlorobenzene, chlorobenzene or N-hexane. The method for fabricating an organic-inorganic light-emitting device according to claim 18, wherein the material of the organic conductive thin film layer is a polymer material, a small molecular material, an organic semiconductor material, a fluorescent light emitting molecule, and a fluorescent light emitting molecule doping. The phosphorescent or fluorescent emitting molecule is doped with an organic insulating molecule. The method for producing an organic-inorganic light-emitting device according to claim 34, wherein the organic insulating molecule is polymethyl methacrylate or polystyrene. The method for fabricating an organic-inorganic light-emitting device according to claim 34, wherein the organic semiconductor material is poly(3-hexylthiophene (P3HT), [poly(3-octylthiophene, P3OT)] Poly [N-vinyl fluorene Azole][poly(N-vinylcarbazole,PVK)], poly[2-methoxy-5-[2-ethylhexyloxy]-[1,4-phenylenevinylidene]][poly[2 -methoxy-5-(2-ethylhexyloxy)-(1,4-phenylenevinylene), MEHPPV]], poly[2-methoxy-5-(3',7'-ethaneoctyloxy)-1,4 -Phenylvinyl][poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene, MDMOPPV]], polyfluorine [poly(fluorine), PF] or N'- Phenyl-N,N'-bis(3-methylphenyl)-[1-1'-biphenyl]-4,4'-diamine [N'-diphenyl-N, N'-bis[3- Methylphenyl]-[1,1'-biphenyl]-[4,4'-diamine], TPD]. The method for fabricating an organic-inorganic light-emitting device according to claim 18, wherein the conductive substrate is made of tantalum or a soft conductive material.