TWI396301B - Production Method of White Light -emitting - Google Patents
Production Method of White Light -emitting Download PDFInfo
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- TWI396301B TWI396301B TW097132118A TW97132118A TWI396301B TW I396301 B TWI396301 B TW I396301B TW 097132118 A TW097132118 A TW 097132118A TW 97132118 A TW97132118 A TW 97132118A TW I396301 B TWI396301 B TW I396301B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description
本發明為提供一種白光發光二極體,尤指一種能夠提供能同時兼顧高發光亮度和極佳之演色性的白光發光二極體之製作方法。The present invention provides a white light emitting diode, and more particularly to a method for fabricating a white light emitting diode capable of simultaneously achieving high luminance and excellent color rendering.
按,白光係為多種顏色之混合光,可被人類視覺所感受為白光者,且至少包括兩種以上波長之混合光。例如:當人眼同時受紅、藍及綠光的刺激時,或同時受到藍光或黃光的刺激時,均可感受為白光,因此,可依照此原理,製作一可發出白光之半導體發光裝置,而習知的白光半導體發光裝置的製作方式如下。According to the white light, the mixed light of a plurality of colors can be perceived as white light by human vision, and at least includes mixed light of two or more wavelengths. For example, when the human eye is stimulated by red, blue and green light at the same time, or when stimulated by blue light or yellow light at the same time, it can be perceived as white light. Therefore, according to this principle, a semiconductor light emitting device capable of emitting white light can be fabricated. The conventional white light semiconductor light-emitting device is manufactured as follows.
第一種方式係使用以磷化鋁鎵銦(AlInGaP)、氮化銦鎵(InGaN)與磷化鎵(GaP)為材質三顆紅藍綠發光二極體,控制通過各發光二極體之電流,而使其分別發出紅、綠及藍光。將此三顆發光二極體晶粒配置於同一個燈泡(lamp)中,並利用透鏡將三種顏色之光加以混合而產生白光。如第一A圖所示,係為習知形成白光單元之示意圖,在基材10上可安置紅色發光二極體LR、綠色發光二極體LG及藍光發光二極體LB,並在上面覆蓋封裝膠體11以做保護用途。第一B圖所示,係為習知白光之光譜圖,可看出紅色發光二極體LR、綠色發光二極體LG及藍色發光二極體LB發射光譜中心分隔且並非寬廣分布。由於白光是400-720nm間連續分布之光譜形成,因此該習知白光發光二極體色彩飽和度較低。雖然人類的眼睛可忽略此現象而只看見白色光,但在一些精密度較高的光學偵檢器的感測下,例如,攝影機或相機等,其演色性(color renderin g property)在實質上仍偏低,再者當不同光色發光二極體其中之一發生故障時,將無法得到正常的白光,且總體而言發光效率差,如此,其整體的亮度則被降低,再者演色性雖然高,但色彩飽和度較低。The first method uses three red, blue, and green light-emitting diodes made of aluminum gallium indium phosphide (AlInGaP), indium gallium nitride (InGaN), and gallium phosphide (GaP) to control the light-emitting diodes. Current, which causes red, green, and blue light, respectively. The three light-emitting diode crystal grains are arranged in the same lamp, and the three colors of light are mixed by a lens to generate white light. As shown in FIG. A, it is a schematic diagram of forming a white light unit, and a red light emitting diode LR, a green light emitting diode LG, and a blue light emitting diode LB may be disposed on the substrate 10 and covered thereon. The encapsulant 11 is encapsulated for protection purposes. As shown in the first B-picture, it is a spectrum of the conventional white light, and it can be seen that the red light-emitting diode LR, the green light-emitting diode LG, and the blue light-emitting diode LB have spectral center separations and are not broadly distributed. Since white light is a continuously distributed spectrum formed between 400 and 720 nm, the conventional white light emitting diode has a low color saturation. Although the human eye can ignore this phenomenon and only see white light, but under the sensing of some highly sophisticated optical detectors, such as cameras or cameras, its color rendering (color renderin g property) is still substantially low, and when one of the different light-emitting diodes fails, normal white light will not be obtained, and overall the luminous efficiency is poor, so that the overall brightness is Lower, and although the color rendering is high, the color saturation is low.
第二種方式為1996年日本日亞化學(Nichia Chemical)公司所發展出之技術,其係以氮化銦鎵藍光發光二極體配合受激發可發出黃光之釔鋁石榴石型螢光粉,來製成一白光光源。由於此種方式僅需使用一組發光二極體晶片,可大幅地降低製造成本,參閱第二圖,係為另一習知形成白光單元之示意圖,在基材10上可安置藍色發光二極體LB,並在上面覆蓋黃色螢光體PY,以吸收藍色發光二極體LB並發出黃光,並與藍光混合成為白光,現今其所搭配之螢光粉調製技術已臻成熟,故已有商品呈現,隨然其可產生高亮度的白光,惟,此種演色性更差。The second method is the technology developed by Nichia Chemical Co., Ltd. in 1996, which uses an indium gallium nitride blue light-emitting diode with an yttrium aluminum garnet-type phosphor that is excited to emit yellow light. Make a white light source. Since only one set of light-emitting diode chips is used in this manner, the manufacturing cost can be greatly reduced. Referring to the second figure, another schematic diagram of forming a white light unit can be disposed on the substrate 10. The polar body LB is covered with a yellow phosphor PY to absorb the blue light-emitting diode LB and emit yellow light, and is mixed with blue light to become white light. Nowadays, the phosphor powder modulation technology matched with it has matured. Existing products are presented, and as a result, they can produce high-intensity white light, but such color rendering is even worse.
是以,要如何解決上述習用之問題與缺失,即為本發明之發明人與從事此行業之相關廠商所亟欲研究改善之方向所在者。Therefore, how to solve the above problems and deficiencies in the above-mentioned applications, that is, the inventors of the present invention and those involved in the industry are eager to study the direction of improvement.
故,本發明之發明人有鑑於上述缺失,乃搜集相關資料,經由多方評估及考量,並以從事於此行業累積之多年經驗,經由不斷試作及修改,始設計出此種能夠提供更高發光亮度及演色性更佳的白光發光二極體之製作方法的發明專利者。Therefore, the inventors of the present invention have collected the relevant materials in view of the above-mentioned shortcomings, and through multi-party evaluation and consideration, and through years of experience accumulated in the industry, through continuous trial and modification, this design can provide higher illumination. An inventor of the method for fabricating a white light emitting diode having better brightness and color rendering properties.
本發明之主要目的在於:一種白光發光二極體之製作方法,包含一基材,且於基材上至少設有一個以上具有紅、藍、綠三基色混合之白光發光單元,且連接電極至該白光發光單元,並於該白光發光單元表面塗覆有黃色螢光體,其中該黃色螢光體係採用YAG:Ce或TbAG:C e,利用白光發光單元所產生的白光,並激發該黃色螢光體使其能同時兼顧高發光亮度和極佳演色性之白光。The main object of the present invention is to provide a method for fabricating a white light emitting diode comprising a substrate, and at least one white light emitting unit having a mixture of three primary colors of red, blue and green is provided on the substrate, and the electrodes are connected to The white light emitting unit is coated with a yellow phosphor on the surface of the white light emitting unit, wherein the yellow fluorescent system adopts YAG:Ce or TbAG:C e, using the white light generated by the white light emitting unit, and exciting the yellow phosphor to enable both white light with high luminance and excellent color rendering.
為達成上述目的及功效,本發明所採用之技術手段及構造,茲繪圖就本發明較佳實施例詳加說明其特徵與功能如下,俾利完全了解。In order to achieve the above objects and effects, the technical means and the structure of the present invention will be described in detail with reference to the preferred embodiments of the present invention.
請參閱第三圖所示,係為本發明較佳實施例之示意圖,由圖中可清楚看出本發明係為一種白光發光二極體,其包含一基材20,且於基材20上至少設有一個以上具有紅、藍、綠三基色混合之白光發光單元30,而該白光發光單元30係由紅色晶片LR40、藍色晶片LB50、綠色晶片LG60個別所發出的光,進行混合後所得到的白光,再連接電極至該白光發光單元30,並於該白光發光單元30表面塗覆有黃色螢光體PY70,其中該黃色螢光體PY70係採用YAG:Ce、TbAG:Ce、矽酸鹽(Sr3 SiO5 :Eu)或氮化物、氮氧化物(BaSi7 N10 :Eu、(Ca,Sr,Ba)Si2 N2 O2 )所構成。Referring to the third embodiment, which is a schematic view of a preferred embodiment of the present invention, it is clear that the present invention is a white light emitting diode comprising a substrate 20 and on a substrate 20. At least one white light emitting unit 30 having a mixture of three primary colors of red, blue and green is provided, and the white light emitting unit 30 is lightly mixed by the red wafer LR40, the blue wafer LB50, and the green wafer LG60. The obtained white light is connected to the white light emitting unit 30, and the surface of the white light emitting unit 30 is coated with a yellow phosphor PY70, wherein the yellow phosphor PY70 is made of YAG:Ce, TbAG:Ce, tannic acid. A salt (Sr 3 SiO 5 :Eu) or a nitride or an oxynitride (BaSi 7 N 10 :Eu, (Ca,Sr,Ba)Si 2 N 2 O 2 ).
請同時配合參閱第四圖及第四A圖所示,係為本發明較佳實施例之光譜圖一及圖二,由圖中可清楚看出,由於白光發光單元30所發出的白光,係由紅、藍、綠三基色晶片個別所發出的光經混合所得到,而紅、藍、綠三基色晶片其波長(nm)分別為,紅色晶片LR40波長介於625~650nm、藍色晶片LB50波長介於450~475nm及綠色晶片LG60波長介於515~550nm,並於該白光發光單元30表面塗覆有黃色螢光體PY70,其中該黃色螢光體PY70選用YAG:Ce,其致活物亦可單獨選擇Pr或Dy,或Pr與Dy的組合者,當黃色螢光體PY70受到白光激發時,會使得白 光相對發光強度增加,同時可得到演色性更佳之白光。Please refer to FIG. 4 and FIG. 4A at the same time, which are the spectrum diagrams 1 and 2 of the preferred embodiment of the present invention. It can be clearly seen from the figure that the white light emitted by the white light emitting unit 30 is The light emitted by the red, blue, and green primary color chips is obtained by mixing, and the wavelengths (nm) of the red, blue, and green primary color chips are respectively, the red wafer LR40 has a wavelength of 625 to 650 nm, and the blue wafer LB50. The wavelength of the green wafer LG60 is between 515 and 550 nm, and the surface of the white light emitting unit 30 is coated with a yellow phosphor PY70, wherein the yellow phosphor PY70 is selected from YAG:Ce. You can also choose Pr or Dy alone, or a combination of Pr and Dy. When the yellow phosphor PY70 is excited by white light, it will make white. The relative luminous intensity of the light is increased, and at the same time, white light with better color rendering properties can be obtained.
請參閱第五圖、第六圖及第六A圖所示,由圖中可清楚看出,係為本發明另一較佳實施例之示意圖、光譜圖一及光譜圖二,於基材20a上係設有複數個白光發光單元30a,而白光發光單元30a所產生的白光係由藍色晶片LB50a、綠色晶片LG60a及紅螢光體PR80所激發而成,其中紅螢光體PR80係採用CaS:Eu或Y2 O2 S:Eu、Gd其中之一者,而紅螢光體PR80受到藍色晶片LB50a的激發,再混合綠色晶片LG60a的光,進而產生白光,而藍、綠晶片其波長(nm)分別為,藍色晶片LB50a波長介於450~475nm及綠色晶片LG60a波長介於515~550nm,並於該白光發光單元30a表面塗覆有黃色螢光體PY70a,其中該黃色螢光體PY70a選用TbAG:Ce,其致活物亦可單獨選擇Pr或Dy,或Pr與Dy的組合者,當黃色螢光體PY70a受到白光激發時,會使得白光相對發光強度增加,同時可得到演色性更佳之白光。Please refer to the fifth, sixth and sixth A diagrams. It can be clearly seen from the figure that it is a schematic diagram, a spectrum diagram 1 and a spectrum diagram 2 of another preferred embodiment of the invention, on the substrate 20a. The upper part is provided with a plurality of white light emitting units 30a, and the white light generated by the white light emitting unit 30a is excited by the blue wafer LB50a, the green wafer LG60a and the red phosphor PR80, wherein the red phosphor PR80 is CaS. :Eu or Y 2 O 2 S: one of Eu, Gd, and the red phosphor PR80 is excited by the blue wafer LB50a, and then the light of the green wafer LG60a is mixed, thereby generating white light, and the wavelength of the blue and green wafers (nm), the blue wafer LB50a has a wavelength of 450 to 475 nm and the green wafer LG60a has a wavelength of 515 to 550 nm, and the surface of the white light emitting unit 30a is coated with a yellow phosphor PY70a, wherein the yellow phosphor PY70a uses TbAG:Ce, and its active material can also choose Pr or Dy alone, or a combination of Pr and Dy. When the yellow phosphor PY70a is excited by white light, it will increase the relative luminous intensity of white light and obtain color rendering. Better white light.
請參閱第七圖、第八圖及第八A圖所示,係為本發明又一較佳實施例之示意圖、光譜圖一及光譜圖二,由圖中可清楚看出,於基材20b上係設有複數個白光發光單元30b,而白光發光單元30b所產生的白光係由藍色晶片LB50b、紅螢光體PR80b及綠螢光體PG90所激發而成,其中綠螢光體PG90SrGa2 S4 係採用CaS:Eu或Y2 O2 S:Eu、Gd其中之一者,而紅螢光體PR80b係採用CaS:Eu或Y2 O2 S:Eu、Gd其中之一者,而紅螢光體PR80b及綠螢光體PG90分別受到藍色晶片LB50b的光而激發,進而產生白光,而藍色晶片LB50b其波長(nm)介於450~475nm,並於該白光發光單元30b表面 塗覆有黃色螢光體PY70b,其中該黃色螢光體PY70b選用TbAG:Ce,其致活物亦可單獨選擇Pr或Dy,或Pr與Dy的組合者,當黃色螢光體PY70b受到白光激發時,會使得白光相對發光強度增加,同時可得到演色性更佳之白光。Please refer to the seventh, eighth and eighth A diagrams, which are schematic diagrams, a spectrogram 1 and a spectrogram 2 according to still another preferred embodiment of the present invention. It can be clearly seen from the figure that the substrate 20b is visible. The upper part is provided with a plurality of white light emitting units 30b, and the white light generated by the white light emitting unit 30b is excited by the blue wafer LB50b, the red phosphor PR80b and the green phosphor PG90, wherein the green phosphor PG90SrGa 2 The S 4 system adopts one of CaS:Eu or Y 2 O 2 S:Eu, Gd, and the red phosphor PR80b adopts one of CaS:Eu or Y 2 O 2 S:Eu, Gd, and red The phosphors PR80b and the green phosphors PG90 are respectively excited by the light of the blue wafer LB50b to generate white light, and the blue wafer LB50b has a wavelength (nm) of 450 to 475 nm and is coated on the surface of the white light emitting unit 30b. It is covered with a yellow phosphor PY70b, wherein the yellow phosphor PY70b is selected from TbAG:Ce, and the activator can also be selected by Pr or Dy alone, or a combination of Pr and Dy, when the yellow phosphor PY70b is excited by white light. It will increase the relative luminous intensity of white light and obtain white light with better color rendering.
是以,本發明之白光發光二極體之製作方法為可改善習用之技術關鍵在於:Therefore, the key to the manufacturing method of the white light emitting diode of the present invention is that the technology can be improved:
一、利用白光發光單元30所產生的白光,並激發該黃色螢光體PY70使產生更高亮度及演色性更佳之白光。1. Using the white light generated by the white light emitting unit 30, and exciting the yellow phosphor PY70 to produce white light with higher brightness and better color rendering.
二、三原色的白光具有高演色性的特性,而黃色螢光體PY70則受激後讓原有之亮度大幅提升,當兩者相混運作時,不僅可兼顧高發光亮度和極佳演色性之白光,更因四色混光的緣故,使得色彩飽和度比原有的架構更佳,藉此,亦能呈現出更廣之色域範圍。The white light of the two primary colors has high color rendering properties, while the yellow phosphor PY70 is stimulated to greatly increase the original brightness. When the two are mixed, the high brightness and excellent color rendering can be achieved. White light, because of the four-color mixed light, makes the color saturation better than the original architecture, and thus can display a wider range of color gamut.
惟,以上所述僅為本發明之較佳實施例而已,非因此即拘限本發明之專利範圍,故舉凡運用本發明說明書及圖式內容所為之簡易修飾及等效結構變化,均應同理包含於本發明之專利範圍內,合予陳明。However, the above description is only for the preferred embodiment of the present invention, and thus the scope of the present invention is not limited thereto, so that the simple modification and equivalent structural changes that are made by using the specification and the contents of the present invention should be the same. It is included in the scope of the patent of the present invention and is combined with Chen Ming.
綜上所述,本發明之白光發光二極體之製作方法於使用時,為確實能達到其功效及目的,故本發明誠為一實用性優異之發明,為符合發明專利之申請要件,爰依法提出申請,盼 審委早日賜准本發明,以保障發明人之辛苦發明,倘若 鈞局審委有任何稽疑,請不吝來函指示,發明人定當竭力配合,實感公便。In summary, the method for fabricating the white light emitting diode of the present invention can achieve its efficacy and purpose when used. Therefore, the present invention is an invention with excellent practicability, and is an application for conforming to the invention patent. Applying according to law, I hope that the trial committee will grant the invention as soon as possible to protect the inventor's hard work. If there is any doubt in the trial committee, please do not hesitate to give instructions, the inventor will try his best to cooperate and feel punished.
基材‧‧‧10、20、20a、20bSubstrate ‧‧10,20,20a,20b
封裝膠體‧‧‧11Encapsulation ‧‧11
白光發光單元‧‧‧30、30a、30bWhite light emitting unit ‧‧3030, 30a, 30b
紅色晶片LR‧‧‧40Red wafer LR‧‧‧40
藍色晶片LB‧‧‧50、50a、50bBlue wafer LB‧‧50, 50a, 50b
綠色晶片LG‧‧‧60、60aGreen chip LG‧‧60, 60a
黃色螢光體PY‧‧‧70、70a、70bYellow phosphor PY‧‧70, 70a, 70b
紅螢光體PR‧‧‧80、80bRed phosphor PR‧‧80, 80b
綠螢光體PG‧‧‧90Green Fluorescent PG‧‧‧90
第一A圖 係為習知形成白光單元之示意圖。The first A diagram is a schematic diagram of a conventional white light unit.
第一B圖 係為習知白光之光譜圖。The first B diagram is a spectrum of conventional white light.
第二圖 係為另一習知形成白光單元之示意圖。The second figure is a schematic diagram of another conventional method of forming a white light unit.
第三圖 係為本發明較佳實施例之示意圖。The third drawing is a schematic view of a preferred embodiment of the invention.
第四圖 係為本發明較佳實施例之光譜圖一。The fourth figure is a spectrogram of the preferred embodiment of the invention.
第四A圖 係為本發明較佳實施例之光譜圖二。Figure 4A is a spectrogram 2 of a preferred embodiment of the invention.
第五圖 係為本發明另一較佳實施例之示意圖。Figure 5 is a schematic view of another preferred embodiment of the present invention.
第六圖 係為本發明另一較佳實施例之光譜圖一。The sixth drawing is a spectrogram 1 of another preferred embodiment of the present invention.
第六A圖 係為本發明另一較佳實施例之光譜圖二。Figure 6A is a spectrogram 2 of another preferred embodiment of the present invention.
第七圖 係為本發明又一較佳實施例之示意圖。Figure 7 is a schematic view of still another preferred embodiment of the present invention.
第八圖 係為本發明又一較佳實施例之光譜圖一。The eighth figure is a spectrogram 1 of still another preferred embodiment of the present invention.
第八A圖 係為本發明又一較佳實施例之光譜圖二。Figure 8A is a second spectrum diagram of another preferred embodiment of the present invention.
基材‧‧‧20Substrate ‧‧20
白光發光單元‧‧‧30White light unit ‧‧30
紅色晶片LR‧‧‧40Red wafer LR‧‧‧40
藍色晶片LB‧‧‧50Blue wafer LB‧‧‧50
綠色晶片LG‧‧‧60Green chip LG‧‧60
黃色螢光體PY‧‧‧70Yellow phosphor PY‧‧‧70
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---|---|---|---|
TW097132118A TWI396301B (en) | 2008-08-22 | 2008-08-22 | Production Method of White Light -emitting |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW097132118A TWI396301B (en) | 2008-08-22 | 2008-08-22 | Production Method of White Light -emitting |
Publications (2)
Publication Number | Publication Date |
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TW201010126A TW201010126A (en) | 2010-03-01 |
TWI396301B true TWI396301B (en) | 2013-05-11 |
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Family Applications (1)
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TW097132118A TWI396301B (en) | 2008-08-22 | 2008-08-22 | Production Method of White Light -emitting |
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TW (1) | TWI396301B (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI234294B (en) * | 2003-08-12 | 2005-06-11 | Lite On Technology Corp | White light-emitting device |
TWI245433B (en) * | 2004-04-09 | 2005-12-11 | Harvatek Corp | White light-emitting diode component and method for manufacturing the same |
TWI251945B (en) * | 2004-03-16 | 2006-03-21 | Harvatek Corp | White light-emitting diode unit |
-
2008
- 2008-08-22 TW TW097132118A patent/TWI396301B/en not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI234294B (en) * | 2003-08-12 | 2005-06-11 | Lite On Technology Corp | White light-emitting device |
TWI251945B (en) * | 2004-03-16 | 2006-03-21 | Harvatek Corp | White light-emitting diode unit |
TWI245433B (en) * | 2004-04-09 | 2005-12-11 | Harvatek Corp | White light-emitting diode component and method for manufacturing the same |
Also Published As
Publication number | Publication date |
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TW201010126A (en) | 2010-03-01 |
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