TWI391067B - Thermally conductive substrate for electronic component with low thermal resistance, low thermal expansion coefficient and high electrical reliability and manufacturing method thereof - Google Patents

Thermally conductive substrate for electronic component with low thermal resistance, low thermal expansion coefficient and high electrical reliability and manufacturing method thereof Download PDF

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TWI391067B
TWI391067B TW98128769A TW98128769A TWI391067B TW I391067 B TWI391067 B TW I391067B TW 98128769 A TW98128769 A TW 98128769A TW 98128769 A TW98128769 A TW 98128769A TW I391067 B TWI391067 B TW I391067B
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polymer composite
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thermally conductive
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具低熱阻、低熱膨脹係數及高電性可靠度之電子元件用導熱基板及其製造方法Thermal conductive substrate for electronic component with low thermal resistance, low thermal expansion coefficient and high electrical reliability and manufacturing method thereof

本發明係關於一種導熱基板,尤指設置於一電子元件與一散熱模組之間,用於將電子元件所產生之熱傳導至散熱模組者。The invention relates to a heat-conducting substrate, in particular, disposed between an electronic component and a heat-dissipating module for conducting heat generated by the electronic component to the heat-dissipating module.

電子產品在技術的進步下,逐漸朝向高效能化發展,而高效能電子元件相對需要較高功率來驅動,惟伴隨著功率的提高,電子元件在運作時亦產生可觀的熱量,這些累積在電子元件上的熱量將對電子元件造成損害,造成電子元件壽命及可靠度下降,舉例來說,在綠能產業迅速發展下,發光二極體(LED,light-emitting diode)在照明、背光模組等領域的重要性也日益增加,尤以照明產業更是積極將白熾燈源置換成LED燈源,隨之帶動LED需求日益增加,然而目前LED輸入功率約僅15~25%的電能轉化為光,其餘75~85%的輸入功率均轉化為熱量,熱量若累積在LED將造成其發光強度降低、發光顏色偏移、封裝材料產生黃變及壽命減少等問題,尤其對高功率LED而言,其所產生的熱對LED之影響更不可忽視。Under the advancement of technology, electronic products are gradually moving toward high-efficiency development, while high-performance electronic components require relatively high power to drive, but with the increase of power, electronic components also generate considerable heat during operation, which accumulate in electronics. The heat on the components will cause damage to the electronic components, resulting in a decrease in the life and reliability of the electronic components. For example, in the rapid development of the green energy industry, LEDs are light-emitting diodes in lighting and backlight modules. The importance of such fields is also increasing. Especially the lighting industry is actively replacing the incandescent light source with the LED light source, which in turn drives the increasing demand for LEDs. However, only about 15~25% of the LED input power is converted into light. The remaining 75~85% of the input power is converted into heat. If the heat accumulates in the LED, it will cause its luminous intensity to decrease, the color of the light to shift, the yellowing of the packaging material and the life reduction, especially for high-power LEDs. The heat generated by it has a greater impact on the LED.

參見第四圖所示,為解決上述熱量所帶來之不良影響,於電子元件(40)上可裝設有導熱絕緣金屬基板(IMS,Insulated metal substrate),用以將電子元件(40)上產生的熱量傳導至一散熱模組(圖中未示)發散,現有技術中常見用於電子元件之導熱絕緣金屬基板,其結構係於一導電金屬層(31)與一導熱金屬層(33)之間設置一導熱絕緣層(32),現有 技術之導熱絕緣金屬基板概略有三種製程,其中: 第一種製程係先將導熱粉體與熱可塑性有機樹脂分散混合,將混合完成之溶液分別塗佈於導電金屬層(31)表面與導熱金屬層(33)表面,並將二者烘烤完全乾燥,使其分別在兩金屬層(31)(33)表面形成一熱可塑性導熱複合薄膜,隨後將兩金屬層(31)(33)以形成有熱可塑性導熱複合薄膜的一面貼合,並藉由熱壓合製程令熱可塑性導熱複合薄膜熔融而將兩金屬層(31)(33)黏著,而構成一電子元件用導熱絕緣金屬基板,此一製程之缺點為需經過高溫壓合,壓合之溫度大於200℃,且易在各層介面產生孔洞,因而造成熱阻增加; 第二種製程係先將導熱固體粉體與液態熱固性有機樹脂混合成樹脂漿料(slurry),並將漿料塗佈於導熱金屬層(33)表面,形成一導熱複合樹脂漿料薄層,再將導電金屬層(31)覆蓋於漿料薄層上,以加溫加壓方式令導熱複合樹脂漿料薄層熱固化成一導熱絕緣層,該製程之缺點係樹脂漿料在熱固化前具流動性,在加溫加壓壓合製程中,易有未固化漿料溢出板外之問題,且膠漿料在壓合過程中,易產生導熱固體粉末與液態熱固性樹脂分相之現象,造成導熱固體粉末在導熱絕緣層中分散不均,導致絕緣層導熱效率及可靠度下降; 第三種製程為在樹脂熔點以上之溫度,將無機導熱粉末、熱塑性塑膠、熱固性環氧樹脂均勻混練,形成一均勻狀橡膠材料,在製膜加工前,於均勻橡膠材料中加入一熱固性環氧固化劑及催化劑,並藉由塑膠加工工程(包含擠出成形(extrusion)、輪壓成形(calendering)、射出成形(injection molding))製成一附有離型材之導熱絕緣複合材料薄膜,該導熱絕緣複合材料薄膜之高分子部分為一交互穿透結構(IPN,inter-penetrating network),將移除離型材之導熱絕緣複合薄膜置於導電金屬層(31)與導熱金屬層(33)之間,再以加溫壓合製程將絕緣層與兩金屬層(31)(33)貼合而構成所述導熱絕緣金屬底板,該製程之缺點為橡膠材料製備過程需在高溫下混練,熱塑性塑膠在高溫混練過程中為一高黏度流體,無機導熱粉末不易在其中均勻分散,且具交互穿透結構之導熱絕緣複合材料薄膜在壓合時,須加熱至熱塑性塑膠之熔點以上,如此易造成無法均勻流平於金屬層(31)(33)表面而在介面形成空隙或孔洞,使導熱絕緣金屬基板熱阻抗值上升。As shown in the fourth figure, in order to solve the adverse effects caused by the above heat, an electronic component (40) may be provided with an insulated metal substrate (IMS) for mounting the electronic component (40). The generated heat is conducted to a heat dissipation module (not shown), which is commonly used in the prior art for a thermally conductive and insulated metal substrate for electronic components, and is structured by a conductive metal layer (31) and a thermally conductive metal layer (33). A thermal insulation layer (32) is disposed between the existing There are three processes for technically conductive thermally insulating metal substrates, among which: The first process first disperses and mixes the thermally conductive powder with the thermoplastic organic resin, and applies the mixed solution to the surface of the conductive metal layer (31) and the surface of the thermally conductive metal layer (33), respectively, and completely bakes the two. Drying to form a thermoplastic thermal conductive composite film on the surface of the two metal layers (31) (33), respectively, and then bonding the two metal layers (31) (33) to the side on which the thermoplastic thermal conductive composite film is formed, and borrowing The thermal compression bonding process causes the thermoplastic conductive composite film to be melted to adhere the two metal layers (31) (33) to form a thermally conductive and insulating metal substrate for an electronic component. The disadvantage of this process is that it is subjected to high temperature pressing and pressing. The temperature is greater than 200 ° C, and it is easy to create holes in the interface of each layer, thereby causing an increase in thermal resistance; The second process firstly mixes the heat conductive solid powder with the liquid thermosetting organic resin into a resin slurry, and applies the slurry on the surface of the heat conductive metal layer (33) to form a thin layer of the thermally conductive composite resin slurry. Then, the conductive metal layer (31) is covered on the thin layer of the slurry, and the thin layer of the thermally conductive composite resin slurry is thermally cured into a thermally conductive insulating layer by heating and pressing. The disadvantage of the process is that the resin slurry is in the form of heat curing. Fluidity, in the heating and pressing process, it is easy to have the problem that the uncured slurry overflows the plate, and the glue slurry is easy to produce the phenomenon of phase separation between the heat conductive solid powder and the liquid thermosetting resin during the pressing process. The thermally conductive solid powder is unevenly dispersed in the thermally conductive insulating layer, resulting in a decrease in thermal conductivity and reliability of the insulating layer; The third process is a temperature above the melting point of the resin, and the inorganic thermal conductive powder, the thermoplastic plastic, and the thermosetting epoxy resin are uniformly kneaded to form a uniform rubber material, and a thermosetting epoxy is added to the uniform rubber material before the film forming process. Curing agent and catalyst, and through plastic processing engineering (including extrusion, calendering, injection molding (injection) Molding)) forming a thermally conductive insulating composite film with a release profile, the polymer portion of the thermally conductive insulating composite film being an inter-penetrating network (IPN), which will remove the thermal insulation of the release profile The composite film is placed between the conductive metal layer (31) and the heat conductive metal layer (33), and then the insulating layer is bonded to the two metal layers (31) (33) by a heating and pressing process to form the heat conductive insulating metal substrate. The disadvantage of the process is that the rubber material preparation process needs to be mixed at a high temperature, the thermoplastic plastic is a high-viscosity fluid in the high-temperature mixing process, the inorganic thermal conductive powder is not easily dispersed therein, and the thermal conductive insulating composite film has an interactive penetration structure. When pressing, it must be heated above the melting point of the thermoplastic plastic, so that it is difficult to uniformly level the surface of the metal layer (31) (33) to form voids or holes in the interface, so that the thermal resistance value of the thermally conductive and insulating metal substrate rises.

上述該三種製程所製備之導熱絕緣金屬基板,因受限於電性可靠度之影響,導熱絕緣層之厚度必須大於75微米(μm)以上,且為降低其導熱絕緣層之熱阻抗值,必須將該導熱絕緣層之熱傳導係數提高,因此其添加之導熱粉體用量之體積百分比需大於50%以上,造成導熱絕緣複合材料之機械強度不良,易受外力而產生破孔或龜裂,使得電性可靠度下降。The thermal conductive insulating metal substrate prepared by the above three processes is limited by the electrical reliability, and the thickness of the thermal conductive insulating layer must be greater than 75 micrometers (μm) or more, and in order to reduce the thermal resistance value of the thermally conductive insulating layer, The thermal conductivity of the thermally conductive insulating layer is increased, so that the volume percentage of the thermally conductive powder to be added needs to be greater than 50%, resulting in poor mechanical strength of the thermally conductive insulating composite material, and being susceptible to external forces to cause holes or cracks, thereby making electricity The reliability of the decline is reduced.

有鑒於上述三種製程所製備之現有技術之導熱絕緣金屬基板,其導熱絕緣層有於介面處易產生孔洞或空隙、導熱效率低或機械強度不良等情形,而致使導熱絕緣金屬基板有熱阻抗值上升或電性可靠度不足之缺點,本發明係藉由改良該導熱絕緣層據以解決之。In view of the above-mentioned three kinds of processes, the thermal conductive insulating metal substrate has a thermal insulating layer which is easy to generate holes or voids at the interface, low heat conduction efficiency or poor mechanical strength, and the thermal conductive insulating metal substrate has thermal resistance value. The disadvantage of insufficient rise or electrical reliability is that the present invention is solved by improving the thermally conductive insulating layer.

為達成上述發明目的,本發明所運用之技術手段在於提供一種具低熱阻、低熱膨脹係數及高電性可靠度之電子元件用導熱基板,其包含有:一導電金屬層;一高電性可靠度導熱高分子複合材料層,其形成於所述導電金屬層一側面,高電性可靠度導熱高分子複合材料層之厚度介於1至25微米之間,熱阻抗值小於0.13℃-in2 /W,且玻璃轉移溫度大於200℃;一導熱可低溫壓合高分子複合材料層,其形成於高電性可靠度導熱高分子複合材料層的一側面上,導熱可低溫壓合高分子複合材料層的厚度介於1至65微米之間,且熱阻抗值小於0.1℃-in2 /W,該導熱可低溫壓合高分子複合材料層與高電性可靠度導熱高分子複合材料層的總厚度大於15微米;一導熱金屬基材層,其壓合於導熱可低溫壓合高分子複合材料層一側面。In order to achieve the above object, the technical means of the present invention is to provide a thermally conductive substrate for electronic components having low thermal resistance, low thermal expansion coefficient and high electrical reliability, comprising: a conductive metal layer; a high electrical reliability a thermally conductive polymer composite layer formed on one side of the conductive metal layer, the high electrical reliability thermal conductive polymer composite layer having a thickness between 1 and 25 microns and a thermal resistance value of less than 0.13 ° C-in 2 /W, and the glass transition temperature is greater than 200 ° C; a heat-conducting low-temperature pressure-bonded polymer composite layer formed on one side of the high-electricity reliability thermal conductive polymer composite layer, heat-conducting low-temperature pressure-bonded polymer composite The thickness of the material layer is between 1 and 65 micrometers, and the thermal resistance value is less than 0.1 ° C-in 2 /W, and the thermal conductivity can be low-temperature pressed to the polymer composite layer and the high-electricity reliability thermal conductive polymer composite layer The total thickness is greater than 15 microns; a thermally conductive metal substrate layer is pressed against one side of the thermally conductive low temperature pressure bonded polymer composite layer.

本發明所運用之另一技術手段在於提供一種具低熱阻、低熱膨脹係數及高電性可靠度之電子元件用導熱基板之製造方法,其步驟包括:提供一導電金屬層;於導電金屬層一側面形成一高電性可靠度導熱高分子複合材料層:先將導熱粉末分散於含有高電性可靠度樹脂之高分子溶液中,導熱粉末佔高電性可靠度導熱高分子複合材料層之體積百分比小於50%,混合後為一導熱高電性可靠度高分子複合材料溶液,再藉由濕式塗佈技術將其塗 佈於導電金屬層之一側,並於140~350℃下經過30~60分鐘乾燥及環化製程,於導電金屬層上形成該高電性可靠度導熱高分子複合材料層,其玻璃轉移溫度大於200℃;於高電性可靠度導熱高分子複合材料層一側面形成一導熱可低溫壓合高分子複合材料層:先將導熱粉末分散於熱可塑性高分子、熱固性樹脂與交聯劑混合溶液中,且導熱粉末佔導熱可低溫壓合高分子複合材料層之體積百分比介於20%~70%之間,混合後成為一導熱可低溫壓合高分子複合材料溶液,再藉由濕式塗佈技術將其塗佈於高電性可靠度導熱高分子複合材料層一側面,且於100~160℃下乾燥1~3分鐘,而在一高電性可靠度導熱高分子複合材料層上形成一半交聯(semi-curing)之導熱可低溫壓合高分子複合材料薄膜,其玻璃轉移溫度小於120℃;於導熱可低溫壓合高分子複合材料層一側面壓合一導熱金屬基材層:首先提供一導熱金屬基材層,並將其設置於導熱可低溫壓合高分子複合材料層一側面,隨後於120℃~190℃與55~95Kgf/cm2 條件下進行熱壓合1~2分鐘,使半交聯之導熱可低溫壓合高分子複合材料層熔融與導熱金屬基材層接著,再於160℃~200℃下進行烘烤熟化2~8小時,使該半交聯之導熱可低溫壓合高分子複合材料層完全交聯。Another technical method used in the present invention is to provide a method for manufacturing a heat-conductive substrate for an electronic component having low thermal resistance, low thermal expansion coefficient and high electrical reliability, the method comprising the steps of: providing a conductive metal layer; Forming a high-electricity reliability thermal conductive polymer composite layer on the side: first dispersing the thermal conductive powder in a polymer solution containing a high-reliability reliability resin, and the thermal conductive powder accounts for the high-electricity reliability of the thermal conductive polymer composite layer The percentage is less than 50%, and after mixing, it is a thermally conductive and highly reliable polymer composite solution, which is coated on one side of the conductive metal layer by wet coating technology and passed through at 140-350 ° C. ~60 minutes drying and cyclization process, forming the high-electricity reliability thermal conductive polymer composite layer on the conductive metal layer, the glass transition temperature is greater than 200 ° C; on the side of the high-electricity reliability thermal conductive polymer composite layer Forming a heat-conducting low-temperature pressure-bonding polymer composite material layer: first dispersing the heat conductive powder in a thermoplastic polymer, a thermosetting resin and a crosslinking agent mixed solution, and guiding The powder accounts for between 20% and 70% by volume of the thermally conductive low-temperature pressure-bonded polymer composite layer. After mixing, it becomes a thermally conductive low-temperature pressure-bonded polymer composite solution, which is then wet coated. It is coated on one side of the highly electrically reliable thermally conductive polymer composite layer and dried at 100-160 ° C for 1 to 3 minutes to form a half crosslink on a highly electrically reliable thermally conductive polymer composite layer ( Semi-curing) heat-conducting low-temperature pressure-bonding polymer composite film with a glass transition temperature of less than 120 ° C; pressing a thermally conductive metal substrate layer on one side of the thermally conductive low-temperature pressure-bonded polymer composite layer: first providing a heat conduction a metal substrate layer is disposed on one side of the layer of thermally conductive low-temperature pressure-bonded polymer composite material, and then heat-pressed at 120 ° C to 190 ° C and 55 to 95 Kgf / cm 2 for 1 to 2 minutes to make half The cross-linked heat conduction can be low-temperature pressure-bonded polymer composite layer melting and heat-conducting metal substrate layer, and then baked and aged at 160 ° C ~ 200 ° C for 2-8 hours, so that the semi-crosslinked heat conduction can be low temperature pressure bonding The polymer composite layer is completely crosslinked.

本發明之具低熱阻、低熱膨脹係數及高電性可靠度之電子元件用導熱基板,由於其係使用濕式塗佈技術來塗佈高電性可靠度之導熱高分子複合材料層與導熱可低溫壓合高分子複合材料層,因此可減少其與導電金屬層或導熱金 屬基材層的介面處的孔隙,可避免現有技術中第一種製程因絕緣層介面孔隙之產生而造成熱阻抗值上升之缺點,並且濕式塗佈製程可使得高電性可靠度之導熱高分子複合材料層與導熱可低溫壓合高分子複合材料層分別可更容易滲入導電金屬層或導熱金屬基材層之粗糙表面,從而增加相互間的接著力,使成品兼具現有技術第三種製程之成品的優點,又,使用濕式塗佈技術具有導熱粉末可經溶液分散製程更均勻分散於高分子複合材料溶液中,可解決現有技術中各製程需經加熱至高溫以分散導熱粉末之缺點; 此外,所述導熱可低溫壓合高分子複合材料層在完全交聯前為半交聯狀,其特性可避免如現有技術第二種製程中,樹脂漿料在高溫下流動性太高而造成未固化漿料溢出板外之問題。The heat-conductive substrate for electronic components with low thermal resistance, low thermal expansion coefficient and high electrical reliability is coated with a high-reliability thermal conductive polymer composite layer and heat conduction by using wet coating technology. Low temperature bonding of the polymer composite layer, thus reducing it with conductive metal layers or thermal gold The pores at the interface of the substrate layer can avoid the disadvantage that the first process in the prior art causes an increase in the thermal resistance value due to the generation of the interfacial pores of the insulating layer, and the wet coating process can make the thermal conductivity of high electrical reliability. The polymer composite material layer and the heat conductive low temperature pressure bonding polymer composite material layer can more easily penetrate into the rough surface of the conductive metal layer or the heat conductive metal substrate layer, thereby increasing the mutual adhesion force, so that the finished product has the third technology in the prior art. The advantages of the finished product of the process, and the use of the wet coating technology, the thermally conductive powder can be more uniformly dispersed in the polymer composite solution through the solution dispersion process, which can solve the prior art process of heating to high temperature to disperse the thermal conductive powder. Disadvantages; In addition, the heat-conducting low-temperature pressure-bonded polymer composite material layer is semi-crosslinked before being completely cross-linked, and the characteristics thereof can avoid the liquidity of the resin slurry at a high temperature being too high in the second process of the prior art. The problem that the uncured slurry overflows the plate.

參見第一圖所示,本發明之具低熱阻、低熱膨脹係數及高電性可靠度之電子元件用導熱基板,其可設置於一電子元件(20)上,用以將該電子元件(20)運作時所產生之熱量快速導離電子元件(20),例如可將熱量傳導至一散熱模組(圖中未示)予以發散,其結構係依序堆疊包含有一導電金屬層(11)、一高電性可靠度導熱高分子複合材料層(12)、一導熱可低溫壓合高分子複合材料層(13)以及一導熱金屬基材層(14)。Referring to the first figure, the heat-conductive substrate for electronic components of the present invention having low thermal resistance, low thermal expansion coefficient and high electrical reliability can be disposed on an electronic component (20) for the electronic component (20). The heat generated during operation is quickly guided away from the electronic component (20). For example, the heat can be conducted to a heat dissipation module (not shown) to be dispersed, and the structure is sequentially stacked to include a conductive metal layer (11). A highly electrically reliable thermally conductive polymer composite layer (12), a thermally conductive low temperature pressure bonded polymer composite layer (13), and a thermally conductive metal substrate layer (14).

所述導電金屬層(11)之材質與現有技術之導熱絕緣金屬基板之導電金屬層相同,該導電金屬層(11)可經蝕刻線路設計,用以承載電子元件(20),並傳導電子元件(20)所產生之 熱量。The conductive metal layer (11) is made of the same material as the conductive metal layer of the prior art thermally conductive insulated metal substrate. The conductive metal layer (11) can be designed through an etched circuit for carrying electronic components (20) and conducting electronic components. (20) produced Heat.

所述高電性可靠度導熱高分子複合材料層(12),其形成於導電金屬層(11)一側面,參見第二圖所示,其製備方式為:先將導熱粉末以一般物理性分散技術(例如:混練均質機)分散於含有高電性可靠度樹脂之高分子溶液中,導熱粉末佔高電性可靠度導熱高分子複合材料層(12)之體積百分比小於50%,混合後成為一導熱高電性可靠度高分子複合材料溶液,再藉由濕式塗佈技術將混合後之導熱高電性可靠度高分子複合材料溶液塗佈於所述導電金屬層(11)之一側,濕式塗佈技術可減少與導電金屬層(11)介面處產生的孔隙,而後再於140~350℃下進行30~60分鐘乾燥及環化製程,即於導電金屬層(11)上形成該高電性可靠度導熱高分子複合材料層(12),其厚度介於1至25微米之間,熱阻抗值小於0.13℃-in2 /W,且玻璃轉移溫度(Tg)大於200℃;所述導熱粉末可選自於粒徑在10微米以下之金屬氮化物、金屬氧化物、碳化矽、氮化硼所組成之群組。The high-electricity reliability thermal conductive polymer composite layer (12) is formed on one side of the conductive metal layer (11), as shown in the second figure, and is prepared by first dispersing the thermal conductive powder in a general physical state. The technology (for example, a kneading homogenizer) is dispersed in a polymer solution containing a high-reliability reliability resin, and the thermal conductive powder accounts for less than 50% by volume of the high-electricity reliability thermally conductive polymer composite layer (12). a thermally conductive and highly reliable polymer composite solution solution, and then coating the mixed thermally conductive and highly reliable polymer composite solution onto one side of the conductive metal layer (11) by a wet coating technique The wet coating technique can reduce the pores generated at the interface with the conductive metal layer (11), and then perform the drying and cyclization process at 140-350 ° C for 30-60 minutes, that is, forming on the conductive metal layer (11). The high-electricity reliability thermal conductive polymer composite layer (12) has a thickness of between 1 and 25 microns, a thermal resistance value of less than 0.13 ° C-in 2 /W, and a glass transition temperature (Tg) of greater than 200 ° C; The thermally conductive powder may be selected from gold having a particle size of 10 microns or less Nitride, the group consisting of metal oxides, silicon carbide, boron nitride.

所述導熱可低溫壓合高分子複合材料層(13),其形成於高電性可靠度導熱高分子複合材料層(12)的一側面上,參見第三圖所示,其製備方式為:先將導熱粉末以一般物理性分散技術分散於熱可塑性高分子、熱固性樹脂與交聯劑混合溶液中,且導熱粉末佔導熱可低溫壓合高分子複合材料層(13)之體積百分比介於20%~70%之間,混合後成為導熱可低溫壓合高分子複合材料溶液,再藉由濕式塗佈技術將混合後之導熱可低溫壓合高分子複合材料溶液塗佈於所述高電性可靠度導熱高分子複合材料層(12)一側面上,且於 100~160℃下乾燥1~3分鐘,而在高電性可靠度導熱高分子複合材料層(12)上形成一半交聯(semi-curing)之導熱可低溫壓合高分子複合材料薄膜,其厚度介於1至65微米之間,熱阻抗值小於0.1℃-in2 /W,且玻璃轉移溫度小於120℃,此外,導熱可低溫壓合高分子複合材料層(13)與高電性可靠度導熱高分子複合材料層(12)的總厚度係大於15微米;所述導熱粉末可選自於粒徑小於10微米之金屬氮化物、金屬氧化物、碳化矽所組成之群組;所述熱可塑性高分子,可選自於玻璃轉移溫度在90℃以下的壓克力共聚物(Acrylic copolymer)、丁二烯橡膠共聚物(butadiene copolymer)、聚苯乙烯共聚物(polystyrene copolymer)或聚醯胺樹脂(polyamide)所組成之群組,選用之熱可塑性高分子內需含有羧基(carboxy group)、胺基(amine)或羥基(hydroxy group),可與部份交聯劑於溶劑烘乾過程中形成半交聯(semi-curing)高分子薄膜;所述熱固性樹脂係為環氧樹脂,該環氧樹脂分子包含兩個以上之環氧官能基(epoxy group),而環氧當量(epoxy equivalent weight)為100~5000 g/eq.,經烘烤交聯製程可與交聯劑、熱可塑性高分子交聯、亦或自行交聯反應(cross-linking reaction),形成網狀結構(network)高分子;所述交聯劑可選自含有兩個以上反應官能基之芳香族類或脂肪族類所組成之群組,該反應官能基包含羧基(carboxy group)、酸酐(anhydride group)、胺基(amine)、羥基(hydroxy group)或異氰酸基(isocyanate),該交聯劑可與熱可塑性高分子於溶劑烘乾過程中,形成半交聯(semi- curing)高分子,亦可與熱固性樹脂交聯,形成網狀結構(network)高分子。The heat-conducting low-temperature pressure-bonded polymer composite material layer (13) is formed on one side of the high-electricity reliability thermal conductive polymer composite material layer (12), as shown in the third figure, and the preparation method is as follows: First, the thermal conductive powder is dispersed in a mixed solution of a thermoplastic polymer, a thermosetting resin and a crosslinking agent by a general physical dispersion technique, and the thermal conductive powder accounts for a volume percentage of the thermally conductive low-temperature pressure-bonded polymer composite layer (13) of 20 Between % and 70%, after mixing, it becomes a thermally conductive low-temperature pressure-bonded polymer composite solution, and then the mixed heat-conducting low-temperature pressure-bonding polymer composite solution is applied to the high-voltage by wet coating technology. The reliability of the thermally conductive polymer composite layer (12) is one side of the layer and dried at 100 to 160 ° C for 1 to 3 minutes, while forming a half crosslink on the highly electrically reliable thermally conductive polymer composite layer (12). (Semi-curing) a thermally conductive low-temperature pressure-bonded polymer composite film having a thickness of between 1 and 65 μm, a thermal resistance value of less than 0.1 ° C-in 2 /W, and a glass transition temperature of less than 120 ° C, in addition, Thermal conductivity can be low temperature pressed polymer composite layer (13) The high-reliability thermal conductive polymer composite layer (12) has a total thickness of more than 15 μm; the thermally conductive powder may be selected from metal nitrides, metal oxides, and lanthanum carbide having a particle diameter of less than 10 μm. a group of the thermoplastic polymer, which may be selected from Acrylic copolymer, butadiene copolymer, and polystyrene copolymer having a glass transition temperature of 90 ° C or lower. A group consisting of polystyrene copolymer or polyamide, which is selected from a thermoplastic polymer containing a carboxy group, an amine or a hydroxy group. The crosslinking agent forms a semi-curing polymer film in the solvent drying process; the thermosetting resin is an epoxy resin, and the epoxy resin molecule contains two or more epoxy groups. The epoxy equivalent weight is 100-5000 g/eq., and the cross-linking reaction can be cross-linked with a crosslinking agent or a thermoplastic polymer through a baking cross-linking process. Forming a network polymer; The crosslinking agent may be selected from the group consisting of aromatic or aliphatic groups containing two or more reactive functional groups, and the reactive functional group includes a carboxy group, an anhydride group, and an amine group. ), a hydroxy group or an isocyanate, which can form a semi-cured polymer or a thermosetting resin with a thermoplastic polymer in a solvent drying process. Crosslinking to form a network polymer.

所述導熱金屬基材層(14)之材質與現有技術之導熱絕緣金屬基板之導熱金屬層相同,其壓合於導熱可低溫壓合高分子複合材料層(13)的一側面,其壓合方式為:先將導熱金屬基材層(14)置於半交聯之導熱可低溫壓合高分子複合材料層(13)一側面,隨後於120℃~190℃及55~95Kgf/cm2 之條件下進行熱壓合1~2分鐘,令半交聯之導熱可低溫壓合高分子複合材料層(13)熔融而與該導熱金屬基材層(14)接著,由於該半交聯高分子薄膜在壓合溫度時,仍具有相當之流動性,可在壓合過程中容易滲入導熱金屬基材層(14)的粗糙表面,增加導熱可低溫壓合高分子複合材料層(13)與導熱金屬基材層(14)之接著力,而後再於160℃~200℃下進行烘烤熟化2~8小時,使半交聯之導熱可低溫壓合高分子複合材料層(13)完全交聯(full-curing),即構成本發明之具低熱阻、低熱膨脹係數及高電性可靠度之電子元件用導熱基板。The material of the heat conductive metal substrate layer (14) is the same as that of the heat conductive metal substrate of the prior art heat conductive insulating metal substrate, and is pressed against one side of the heat conductive low temperature pressable polymer composite material layer (13). The method is as follows: firstly, the heat conductive metal substrate layer (14) is placed on one side of the semi-crosslinked thermally conductive low temperature pressure-bonded polymer composite layer (13), and then at 120 ° C to 190 ° C and 55 to 95 Kgf / cm 2 Under the condition of thermocompression bonding for 1 to 2 minutes, the semi-crosslinked thermally conductive low-temperature pressure-bonded polymer composite material layer (13) is melted and then adhered to the thermally conductive metal substrate layer (14), due to the semi-crosslinked polymer When the film is pressed at a temperature, it still has considerable fluidity, and can easily penetrate into the rough surface of the heat conductive metal substrate layer (14) during the pressing process, and increase the heat conduction and low temperature pressure bonding polymer composite layer (13) and heat conduction. The bonding force of the metal substrate layer (14) is then baked and aged at 160 ° C to 200 ° C for 2 to 8 hours to completely crosslink the semi-crosslinked thermally conductive low temperature laminated polymer composite layer (13). (full-curing), which constitutes the electron of the invention having low thermal resistance, low thermal expansion coefficient and high electrical reliability A thermally conductive substrate member.

本發明之具低熱阻、低熱膨脹係數及高電性可靠度之電子元件用導熱基板,其高電性可靠度導熱高分子複合材料層(12)與導熱可低溫壓合高分子複合材料層(13)(以下合稱導熱絕緣層(A))之厚度係小於90微米,於較佳實施例中可小於75微米,且導熱絕緣層(A)的總熱阻抗值可降低至0.1℃-in2 /W以下,並且不需提高導熱絕緣層(A)之熱傳導係數,故其添加之導熱粉體用量所佔體積百分比可減少,使得導熱絕緣層(A)之機械強度增加,不易受外力而產生破孔或龜裂; 此外,導熱絕緣層(A)的總體積電阻大於1013 Ω-cm,具備優良的絕緣特性,且其熱膨脹係數(coefficient of thermal expansion)在低溫範圍(120℃以下)小於30ppm/℃,而在120℃以上之熱膨脹係數可小於50ppm/℃,具有良好之尺寸安定性,導熱絕緣層(A)之破壞電壓達3000伏特以上,單位厚度之破壞電壓達1.70KV/mil.以上,因此具有良好的電性可靠度,再者,導熱絕緣層(A)可通過288℃錫爐浸泡10秒以上,因此熱穩定性良好,而該導熱可低溫壓合高分子複合材料層(13)具有較高之延伸性(elongation),在高溫低溫循環測試(heat cycle test)時,可緩衝因不同材質之導電金屬層(11)與導熱金屬基材層(14)之熱膨脹係數不同而產生之熱應力,提高本發明之具低熱阻、低熱膨脹係數及高電性可靠度之電子元件用導熱基板之環境可靠度。The heat-conductive substrate for electronic components with low thermal resistance, low thermal expansion coefficient and high electrical reliability, the high-electricity reliability thermal conductive polymer composite material layer (12) and the heat-conductive low-temperature pressure-bonding polymer composite material layer ( 13) (hereinafter collectively referred to as the thermally conductive insulating layer (A)) has a thickness of less than 90 μm, and in a preferred embodiment may be less than 75 μm, and the total thermal resistance value of the thermally conductive insulating layer (A) may be lowered to 0.1 ° C-in. 2 / W or less, and does not need to increase the thermal conductivity of the thermal conductive layer (A), so the volume percentage of the added thermal powder can be reduced, so that the mechanical strength of the thermal conductive layer (A) increases, and is not susceptible to external forces. In addition, the thermal insulation layer (A) has a total volume resistance of more than 10 13 Ω-cm, has excellent insulation properties, and its coefficient of thermal expansion is in the low temperature range (below 120 ° C). Less than 30ppm/°C, and the coefficient of thermal expansion above 120°C can be less than 50ppm/°C, with good dimensional stability, the breakdown voltage of the thermal insulation layer (A) is more than 3000 volts, and the breakdown voltage per unit thickness is 1.70KV/mil. Above, therefore have Good electrical reliability, in addition, the thermal conductive insulating layer (A) can be immersed in a 288 ° C tin furnace for more than 10 seconds, so the thermal stability is good, and the thermal conductive low temperature pressable polymer composite material layer (13) has a better High elongation, which can buffer thermal stress caused by different thermal expansion coefficients of conductive metal layer (11) and thermal conductive metal substrate layer (14) of different materials during high temperature and low temperature cycle test The environmental reliability of the heat-conductive substrate for electronic components of the present invention having low thermal resistance, low thermal expansion coefficient and high electrical reliability is improved.

以下對依據前述實施方式所製成之導熱基板特性進行比較,由於本發明係著重於導熱絕緣層(A)之特性,故僅針對高電性可靠度導熱高分子複合材料層(12)及導熱可低溫壓合高分子複合材料層(13)構成之導熱絕緣層(A)進行比較,其所需考慮之性質如表一所述,其中為測試接著力,係使用1/2Oz之壓延銅箔作為導電金屬層(11)與導熱金屬基材層(14),目的在於例示本發明之各實施例中,導熱絕緣層與金屬層之接著力,金屬層之材質種類並非本發明所限制之項目,在不脫離創作精神下所作之修飾或變更,皆屬本創作所意圖保護者;表一 The following is a comparison of the characteristics of the thermally conductive substrate produced according to the foregoing embodiment. Since the present invention focuses on the characteristics of the thermally conductive insulating layer (A), it is only for the highly electrically reliable thermally conductive polymer composite layer (12) and heat conduction. The thermal conductive insulating layer (A) composed of the low-temperature pressure-bonded polymer composite material layer (13) is compared, and the properties to be considered are as described in Table 1, wherein the test bonding force is performed using a rolled copper foil of 1/2 Oz. The conductive metal layer (11) and the thermally conductive metal substrate layer (14) are intended to illustrate the adhesion between the thermally conductive insulating layer and the metal layer in various embodiments of the present invention, and the material type of the metal layer is not a limitation of the present invention. Modifications or alterations made without the spirit of creation are the intentions of the author of the creation; Table 1

表二為本發明之三個實施例結果彙整,實施例係根據本發明所闡述之內容實施,表三為比較例之彙整,其係根據三家市售產品廠商之產品型錄,比較例一係依據Denka產品型錄而得,比較例二係依據Laird產品型錄而得,比較例三係依據Bergquist產品型錄而得,本發明內容所列舉之比較例主要與本發明之實施例比較,僅係以例示比較說明本發明於較佳狀況下的操作結果,非企圖以之對該比較例之製造者作任何侵權之行為。Table 2 is a summary of the results of the three embodiments of the present invention. The embodiments are implemented according to the contents described in the present invention. Table 3 is a summary of the comparative examples, which is based on the product catalogues of the three commercially available product manufacturers, and the comparative example is According to the Denka product catalogue, the comparative example 2 is based on the Laird product catalogue, and the comparative example 3 is based on the Bergquist product catalogue. The comparative examples listed in the present invention are mainly compared with the embodiment of the present invention, only The results of the operation of the present invention in a preferred state are illustrated by way of illustration and comparison, and no attempt is made to infringe the manufacturer of the comparative example.

表二 Table II

本發明實施例一至實施例三:所述高電性可靠度導熱高分子複合材料層(12),其高電性可靠度高分子樹脂溶液於實施例一至三中均為聚醯胺酸(Polyamic)之2-甲基砒啶酮(1-Methyl-2-Pyrrolidone,NMP)高分子溶液,經溶劑烘乾及加溫環化製程後得以形成聚醯亞胺(Polyimide)高分子,而導熱粉末於實施例一係無添加,於實施例二中係添加18%的氮化鋁,於實施例三中係添加25%的氮化硼,高電性可靠度導熱高分子複合材料層(12)之乾膜厚度於實施例一為12微米,於實施例二及三均為18微米;所述導熱可低溫壓合高分子複合材料層(13),於實施例一至三中,其熱可塑性高分子均為丁基橡膠共聚物,交聯劑均為多官能基之芳香族胺類,而導熱粉末均為氮化鋁,添加量於各實施例中均為40%,導熱可低溫壓合高分子複合材料層(13)之乾膜厚度於實施例一為37微米,於實施例二為29微米,於實施例三為40微米。Embodiment 1 to Embodiment 3 of the present invention: the high-electricity reliability thermal conductive polymer composite material layer (12), and the high-electricity reliability polymer resin solution is polyamic acid in the first to third embodiments (Polyamic) a 2-methylethylpyridinone (NMP) polymer solution, which is formed by a solvent drying and heating cyclization process to form a polyimide polymer, and a thermal conductive powder. In the first embodiment, no addition is added, in the second embodiment, 18% of aluminum nitride is added, and in the third embodiment, 25% of boron nitride is added, and the high-electricity reliability thermal conductive polymer composite layer (12) The thickness of the dry film is 12 micrometers in the first embodiment, and 18 micrometers in the second and third embodiments; the heat conduction can pressurize the polymer composite material layer (13) at a low temperature, and the thermoplasticity is high in the first to third embodiments. The molecules are all butyl rubber copolymers, the cross-linking agents are all polyfunctional aromatic amines, and the thermal conductive powders are all aluminum nitride, the addition amount is 40% in each embodiment, and the heat conduction can be low-temperature pressed high. The dry film thickness of the molecular composite layer (13) is 37 microns in the first embodiment and 29 microns in the second embodiment. Example 40 is three microns.

本發明實施例一與比較例一比較可得知:實施例一未添加導熱粉體,且導熱絕緣層(A)總厚度僅比較例一之1/2,且在導熱絕緣層(A)熱阻抗值相近下(約0.08℃-in2 /W),實施例一之破壞電壓(6.93KV)大於比較例一(6.8KV),且實施例一之單位厚度破壞電壓(3.54KV/mil.)甚至為比較例一(1.70KV/mil.)之2.08倍,綜上所述,實施例一可在導熱絕 緣層(A)總厚度為比較例一之1/2時,達到相同的熱阻抗值及較高的電性可靠度。Comparing the first embodiment of the present invention with the first comparative example, it can be seen that the first embodiment does not add a thermal conductive powder, and the total thickness of the thermal conductive insulating layer (A) is only 1/2 of that of the first embodiment, and the thermal conductive layer (A) is hot. The impedance value is similar (about 0.08 ° C - in 2 /W), the breakdown voltage of Example 1 (6.93 KV) is greater than that of Comparative Example 1 (6.8 KV), and the unit thickness breakdown voltage of Example 1 (3.54 KV/mil.) Even for 2.08 times of Comparative Example 1 (1.70 KV/mil.), in summary, Embodiment 1 can achieve the same thermal resistance value when the total thickness of the thermally conductive insulating layer (A) is 1/2 of Comparative Example 1. And higher electrical reliability.

本發明實施例二與比較例二比較可得知,實施例二為添加氮化鋁導熱粉體於高電性可靠度導熱高分子複合材料層(12)中,導熱絕緣層(A)之總厚度僅比較例二之1/2,在導熱絕緣層(A)熱阻抗值相近下(0.053℃-in2 /W),實施例二與比較例二之破壞電壓相同(3.2KV),且實施例二之單位厚度破壞電壓(1.7KV/mil.)甚為比較例二(0.8KV/mil.)之2.125倍,綜上所述,實施例三添加氮化鋁(AlN)導熱粉體後,提高高電性可靠度導熱高分子複合材料層(12)之熱傳導係數,以降低導熱絕緣層(A)之總熱阻抗值,但仍可維持絕緣層之高電性可靠度。Comparing the second embodiment of the present invention with the second comparative example, the second embodiment is that the aluminum nitride thermal conductive powder is added to the high-electricity reliability thermal conductive polymer composite layer (12), and the total thermal conductive layer (A) The thickness is only 1/2 of that of the second example, and the thermal resistance value of the thermal conductive insulating layer (A) is similar (0.053 ° C - in 2 /W), and the breaking voltage of the second embodiment and the second comparative example is the same (3.2 KV), and the implementation is performed. The unit thickness breakdown voltage (1.7KV/mil.) of Example 2 is 2.125 times that of Comparative Example 2 (0.8KV/mil.). In summary, after the addition of aluminum nitride (AlN) thermal conductive powder in the third embodiment, The thermal conductivity of the highly conductive reliability thermally conductive polymer composite layer (12) is increased to reduce the total thermal resistance of the thermally conductive insulating layer (A), but the high electrical reliability of the insulating layer can be maintained.

本發明實施例三與比較例二比較可得知,實施例三為添加氮化硼導熱粉體於高電性可靠度導熱高分子複合材料層(12)中,導熱絕緣層(A)之總厚度僅比較例二之0.6倍,在絕緣層熱阻抗值相近下(約0.05℃-in.2 /W),實施例三之破壞電壓(4.63KV)大於比較例二(3.2KV),實施例三之單位厚度破壞電壓(1.99KV/mil.)甚為比較例二(0.8KV/mil.)之2.5倍;又本發明實施例三與比較例三之比較,實施例三之厚度為比較例三之0.77倍,絕緣層之熱阻抗值相近下(約0.05℃-in.2 /W),單位厚度之破壞電壓亦相近(約2.0KV/mil.),綜上所述,實施例三添加氮化硼(h-BN)導熱粉體後,亦可提高高電性可靠度導熱高分子複合材料層(12)之熱傳導係數及電性可靠度。Comparing the third embodiment of the present invention with the second comparative example, the third embodiment is that the boron nitride thermal conductive powder is added to the high-electricity reliability thermal conductive polymer composite layer (12), and the total thermal conductive layer (A) is The thickness is only 0.6 times of that of the second embodiment, and the breakdown voltage (4.63 KV) of the third embodiment is larger than that of the second embodiment (3.2 kV) when the thermal resistance value of the insulating layer is similar (about 0.05 ° C - in. 2 /W). The unit thickness reduction voltage (1.99 KV/mil.) of the third is 2.5 times that of the second comparative example (0.8 KV/mil.); and the thickness of the third embodiment is compared with the comparative example 3, and the thickness of the third embodiment is a comparative example. 0.77 times of the three, the thermal impedance of the insulation layer is similar (about 0.05 ° C - in. 2 / W), the breakdown voltage per unit thickness is also similar (about 2.0 KV / mil.), in summary, the third embodiment is added After the boron nitride (h-BN) thermal conductive powder, the thermal conductivity and electrical reliability of the highly electrically reliable thermally conductive polymer composite layer (12) can also be improved.

此外,於本發明之所有實施例中,導熱可低溫壓合複 合材料層(13),其與高電性可靠度導熱高分子複合材料層(12)及導熱金屬基材層(14)之間的接著力均可達1Kgf /cm以上,而導熱絕緣層(A)之熱膨脹係數約在30ppm/℃以下,其中該熱膨脹係數值皆較所有比較例為小,表示本發明之導熱絕緣層(A)相較於比較例具有較佳的熱尺寸安定性。In addition, in all embodiments of the present invention, the thermally conductive low temperature pressable composite layer (13) is interposed between the highly electrically reliable thermally conductive polymer composite layer (12) and the thermally conductive metal substrate layer (14). the bonding force may be up to 1Kg f / cm or more, and the thermal insulation layer (a) of the thermal expansion coefficient of about 30ppm / ℃ or less, wherein the thermal expansion coefficient values are compared with all Comparative Examples is small, represents a thermally insulating layer according to the present invention ( A) has better thermal dimensional stability than the comparative examples.

實施例與比較例之比較結論說明:本發明可藉由高電性可靠度導熱高分子複合材料層(12)來維持絕緣層整體之電性可靠度,且降低絕緣層厚度,進而降低絕緣層熱阻抗值,進而減少導熱粉末在高分子複合材料中之比例,以維持高分子複合材料之機械性質。The comparison between the embodiment and the comparative example shows that the present invention can maintain the electrical reliability of the entire insulating layer by reducing the thickness of the insulating layer and lower the insulating layer by the highly electrically reliable thermally conductive polymer composite layer (12). The thermal resistance value, in turn, reduces the proportion of the thermally conductive powder in the polymer composite to maintain the mechanical properties of the polymer composite.

綜上所述,本發明之具低熱阻、低熱膨脹係數及高電性可靠度之電子元件用導熱基板,係適用於放熱電子元件之承載,並具備低熱阻、高電性可靠度等優點,且在加溫過程中,具高尺寸安定性,在承載電子元件之鍍錫鉛製程時,可提升板材之可靠度。In summary, the heat-conductive substrate for electronic components having low thermal resistance, low thermal expansion coefficient and high electrical reliability is suitable for carrying heat-dissipating electronic components, and has the advantages of low thermal resistance and high electrical reliability. In the heating process, the high dimensional stability can improve the reliability of the sheet during the tin-plated lead process for carrying electronic components.

(11)‧‧‧導電金屬層(11)‧‧‧ Conductive metal layer

(12)‧‧‧高電性可靠度導熱高分子複合材料層(12)‧‧‧High electrical reliability thermal polymer composite layer

(13)‧‧‧導熱可低溫壓合高分子複合材料層(13) ‧‧‧ Thermally Conductive Low Temperature Pressing Polymer Composite Layer

(14)‧‧‧導熱金屬基材層(14) ‧‧‧thermal metal substrate layer

(A)‧‧‧導熱絕緣層(A) ‧‧‧thermal insulation

(20)‧‧‧電子元件(20)‧‧‧Electronic components

(31)‧‧‧導電金屬層(31)‧‧‧ Conductive metal layer

(32)‧‧‧導熱絕緣層(32)‧‧‧ Thermal insulation

(33)‧‧‧導熱金屬層(33) ‧‧‧thermal metal layer

(40)‧‧‧電子元件(40)‧‧‧Electronic components

第一圖為本發明之剖視圖。The first figure is a cross-sectional view of the present invention.

第二圖為本發明之高電性可靠度導熱高分子複合材料層之製備流程圖。The second figure is a flow chart for preparing a high-electricity reliability thermal conductive polymer composite layer of the present invention.

第三圖為本發明之導熱可低溫壓合高分子複合材料層之製備流程圖。The third figure is a flow chart for preparing a thermally conductive low temperature pressure-bonded polymer composite layer according to the present invention.

第四圖為現有技術之導熱絕緣金屬基板之剖視圖。The fourth figure is a cross-sectional view of a prior art thermally conductive and insulated metal substrate.

(11)‧‧‧導電金屬層(11)‧‧‧ Conductive metal layer

(12)‧‧‧高電性可靠度導熱高分子複合材料層(12)‧‧‧High electrical reliability thermal polymer composite layer

(13)‧‧‧導熱可低溫壓合高分子複合材料層(13) ‧‧‧ Thermally Conductive Low Temperature Pressing Polymer Composite Layer

(14)‧‧‧導熱金屬基材層(14) ‧‧‧thermal metal substrate layer

(20)‧‧‧電子元件(20)‧‧‧Electronic components

(A)‧‧‧導熱絕緣層(A) ‧‧‧thermal insulation

Claims (17)

一種具低熱阻、低熱膨脹係數及高電性可靠度之電子元件用導熱基板,其包含有:一導電金屬層;一高電性可靠度導熱高分子複合材料層,其形成於所述導電金屬層一側面,高電性可靠度導熱高分子複合材料層之厚度介於1至25微米之間,熱阻抗值小於0.13℃-in2 /W,且玻璃轉移溫度大於200℃;一導熱可低溫壓合高分子複合材料層,其形成於高電性可靠度導熱高分子複合材料層的一側面上,導熱可低溫壓合高分子複合材料層的厚度介於1至65微米之間,且熱阻抗值小於0.1℃-in2 /W,該導熱可低溫壓合高分子複合材料層與高電性可靠度導熱高分子複合材料層的總厚度大於15微米;以及一導熱金屬基材層,其壓合於導熱可低溫壓合高分子複合材料層一側面;其中,所述高電性可靠度導熱高分子複合材料層與導熱可低溫壓合高分子複合材料層之結構在120℃以下之熱膨脹係數小於30ppm/℃。A heat-conductive substrate for an electronic component having low thermal resistance, low thermal expansion coefficient and high electrical reliability, comprising: a conductive metal layer; a high-electricity reliability thermal conductive polymer composite layer formed on the conductive metal On one side of the layer, the thickness of the highly electrically reliable thermally conductive polymer composite layer is between 1 and 25 microns, the thermal resistance value is less than 0.13 ° C-in 2 /W, and the glass transition temperature is greater than 200 ° C; The laminated polymer composite layer is formed on one side of the high-electricity reliability thermal conductive polymer composite layer, and the heat-conductive low-temperature pressure-bonded polymer composite layer has a thickness of between 1 and 65 micrometers, and the heat is The resistance value is less than 0.1 ° C - in 2 /W, the thermal conductivity of the low temperature laminated polymer composite layer and the high electrical reliability thermal conductive polymer composite layer has a total thickness of more than 15 micrometers; and a thermally conductive metal substrate layer Pressing on a side surface of the thermally conductive low-temperature pressure-bonded polymer composite material layer; wherein the structure of the high-electricity reliability thermal conductive polymer composite material layer and the heat-conductive low-temperature pressure-bonding polymer composite material layer is below 120 ° C The coefficient of thermal expansion is less than 30 ppm/°C. 如申請專利範圍第1項所述之導熱基板,其中所述高電性可靠度導熱高分子複合材料層與導熱可低溫壓合高分子複合材料層之總厚度小於75微米。 The thermally conductive substrate of claim 1, wherein the high electrical reliability thermal conductive polymer composite layer and the thermally conductive low temperature pressable polymer composite layer have a total thickness of less than 75 micrometers. 如申請專利範圍第1項所述之導熱基板,其中所述高電性可靠度導熱高分子複合材料層與導熱可低溫壓合高分子複合材料層之總熱阻抗值小於0.1℃-in2 /W。The thermally conductive substrate of claim 1, wherein the high thermal reliability thermally conductive polymer composite layer and the thermally conductive low temperature pressure bonded polymer composite layer have a total thermal resistance value of less than 0.1 ° C - in 2 / W. 如申請專利範圍第1項所述之導熱基板,其中所述高電性可靠度導熱高分子複合材料層與導熱可低溫壓合高分子複合材料層之結構在120℃以上之熱膨脹係數小於50ppm/℃。 The thermally conductive substrate according to claim 1, wherein the structure of the high-electricity reliability thermal conductive polymer composite material layer and the heat-conductive low-temperature pressure-bonding polymer composite material layer have a thermal expansion coefficient of less than 50 ppm at 120 ° C or higher. °C. 如申請專利範圍第1項所述之導熱基板,其中所述高電性可靠度導熱高分子複合材料層與導熱可低溫壓合高分子複合材料層之結構的總破壞電壓為3000伏特以上。 The thermally conductive substrate according to claim 1, wherein the structure of the high-electricity reliability thermal conductive polymer composite material layer and the heat-conductive low-temperature pressure-bonding polymer composite material layer has a total breakdown voltage of 3,000 volts or more. 如申請專利範圍第1項所述之導熱基板,其中所述高電性可靠度導熱高分子複合材料層與導熱可低溫壓合高分子複合材料層之結構的總體積電阻為1013 Ω-cm以上。The thermally conductive substrate according to claim 1, wherein the total electrical resistance of the structure of the high-electricity reliability thermal conductive polymer composite layer and the thermally conductive low-temperature pressure-bonded polymer composite layer is 10 13 Ω-cm. the above. 如申請專利範圍第1項所述之導熱基板,其中所述導熱可低溫壓合高分子複合材料層,其與高電性可靠度導熱高分子複合材料層及導熱金屬基材層之間的接著力大於1Kgf /cm。The thermally conductive substrate of claim 1, wherein the thermally conductive low temperature pressure-bonded polymer composite layer is followed by a high electrical reliability thermal conductive polymer composite layer and a thermally conductive metal substrate layer. The force is greater than 1Kg f /cm. 如申請專利範圍第1項所述之導熱基板,其可通過288℃錫爐浸泡10秒以上。 The thermally conductive substrate of claim 1, which can be immersed in a 288 ° C tin furnace for more than 10 seconds. 一種如申請專利範圍第1至8項任一項所述之導熱基板的製造方法,其步驟包括:提供一導電金屬層;於導電金屬層一側面形成一高電性可靠度導熱高分子複合材料層:先將導熱粉末分散於含有高電性可靠度樹脂之高分子溶液中,導熱粉末佔高電性可靠度導熱高分子複合材料層之體積百分比小於50%,混合後為一導熱高電性可靠度高分子複合材料溶液,再藉由濕式塗佈技術將其塗佈於導電金屬層之一側,並於140~350℃下經過30~60分鐘乾燥及環 化製程,於導電金屬層上形成該高電性可靠度導熱高分子複合材料層;於高電性可靠度導熱高分子複合材料層一側面形成一導熱可低溫壓合高分子複合材料層:先將導熱粉末分散於熱可塑性高分子、熱固性樹脂與交聯劑混合溶液中,且導熱粉末佔導熱可低溫壓合高分子複合材料層之體積百分比介於20%~70%之間,混合後成為一導熱可低溫壓合高分子複合材料溶液,再藉由濕式塗佈技術將其塗佈於高電性可靠度導熱高分子複合材料層一側面,且於100~160℃下乾燥1~3分鐘,而在一高電性可靠度導熱高分子複合材料層上形成一半交聯之導熱可低溫壓合高分子複合材料薄膜,其玻璃轉移溫度小於120℃;以及於導熱可低溫壓合高分子複合材料層一側面壓合一導熱金屬基材層;其中,高電性可靠度導熱高分子複合材料層之含高電性可靠度樹脂之高分子溶液為聚醯胺酸(Polyamic)高分子溶液,該高分子溶液經溶劑乾燥及高分子環化製程後,得形成一聚醯亞胺(Polyimide)高分子。 A method for manufacturing a thermally conductive substrate according to any one of claims 1 to 8, wherein the method comprises the steps of: providing a conductive metal layer; forming a high electrical reliability thermal conductive polymer composite on one side of the conductive metal layer Layer: firstly disperse the thermal conductive powder in a polymer solution containing a high-reliability reliability resin, and the thermal conductive powder accounts for less than 50% by volume of the high-electricity reliability thermal conductive polymer composite layer, and is a heat-conducting high-electricity after mixing. The reliability polymer composite solution is coated on one side of the conductive metal layer by wet coating technology, and dried and looped at 140-350 ° C for 30-60 minutes. The high-reliability thermal conductive polymer composite layer is formed on the conductive metal layer; and a thermally conductive low-temperature pressure-bonded polymer composite layer is formed on one side of the high-electricity reliability thermal conductive polymer composite layer: Dispersing the thermal conductive powder in a mixed solution of the thermoplastic polymer, the thermosetting resin and the crosslinking agent, and the thermal conductive powder occupies between 20% and 70% by volume of the thermally conductive low-temperature pressure-bonded polymer composite layer, and after mixing A heat-conducting solution can be pressed at a low temperature to bond the polymer composite solution, and then applied to a side of the high-electricity reliability thermal conductive polymer composite layer by a wet coating technique, and dried at 100 to 160 ° C for 1 to 3 Minutes, and a half-crosslinked thermally conductive low-temperature pressure-bonded polymer composite film formed on a highly electrically reliable thermally conductive polymer composite layer having a glass transition temperature of less than 120 ° C; and a low temperature pressure-bondable polymer at a low temperature a side of the composite material layer is laminated with a heat conductive metal substrate layer; wherein the high electrical reliability polymer layer of the high thermal reliability polymer is a polymer solution of the high electrical reliability resin (Polyamic) polymer solution, the polymer solution was dried and the solvent molecular cyclization process to give a formed polyimide (Polyimide) polymer. 如申請專利範圍第9項所述之製造方法,其中所述於導熱可低溫壓合高分子複合材料層一側面壓合導熱金屬基材層之步驟,係先提供一導熱金屬基材層,並將其設置於導熱可低溫壓合高分子複合材料層一側面,隨後於120℃~190℃與55~95Kgf/cm2 條件下進行熱壓合1~2分鐘,使半交聯之導熱可低溫壓合高分子複合材料層熔融與導熱金屬基材層接著,再於160℃~200℃下進行烘烤熟化 2~8小時,使該半交聯之導熱可低溫壓合高分子複合材料層完全交聯。The manufacturing method of claim 9, wherein the step of pressing the thermally conductive metal substrate layer on one side of the thermally conductive low-temperature pressure-bondable polymer composite layer first provides a thermally conductive metal substrate layer, and It is disposed on one side of the layer of thermally conductive low-temperature pressure-bonded polymer composite material, and then heat-pressed at 120 ° C to 190 ° C and 55 to 95 Kgf / cm 2 for 1 to 2 minutes to make the semi-crosslinked heat conduction low temperature. The laminated polymer layer of the polymer composite material is melted and thermally conductive, and then baked and aged at 160 ° C to 200 ° C for 2 to 8 hours, so that the semi-crosslinked heat conductive low temperature pressure bonding polymer composite layer is completely Cross-linking. 如申請專利範圍第10項所述之製造方法,其中所述高電性可靠度導熱高分子複合材料層中之導熱粉末可選自於粉末粒徑在10微米以下之金屬氮化物、金屬氧化物、氮化硼或碳化矽所組成之群組,而所述導熱可低溫壓合高分子複合材料層中之導熱粉末可選自於粉末粒徑在10微米以下之金屬氮化物、金屬氧化物及碳化矽所組成之群組。 The manufacturing method according to claim 10, wherein the thermally conductive powder in the high-electricity reliability thermally conductive polymer composite layer is selected from the group consisting of metal nitrides and metal oxides having a powder particle size of 10 μm or less. a group consisting of boron nitride or tantalum carbide, and the thermally conductive powder in the thermally conductive low temperature pressable polymer composite layer may be selected from metal nitrides, metal oxides having a powder particle size of 10 microns or less. A group of tantalum carbides. 如申請專利範圍第9至11項任一項所述之製造方法,其中導熱可低溫壓合高分子複合材料層之熱可塑性高分子(thermal plastic polymer)需含有羧基(carboxy group)、胺基(amine)或羥基(hydroxy group),其可選自於玻璃轉移溫度在90℃以下的壓克力共聚物(Acrylic copolymer)、丁二烯橡膠共聚物(butadiene copolymer)、聚苯乙烯共聚物(polystyrene copolymer)或聚醯胺樹脂(polyamide)所組成之群組。 The manufacturing method according to any one of claims 9 to 11, wherein the thermal plastic polymer capable of thermally bonding the polymer composite layer at a low temperature is required to contain a carboxy group or an amine group ( Amine) or a hydroxy group, which may be selected from Acrylic copolymer, butadiene copolymer, polystyrene having a glass transition temperature of 90 ° C or less. Group of copolymers or polyamides. 如申請專利範圍第9至11項任一項所述之製造方法,其中導熱可低溫壓合高分子複合材料層之熱固性樹脂為環氧樹脂,該環氧樹脂分子包含兩個以上之環氧官能基(epoxy group),環氧當量(epoxy equivalent weight)為100~5000 g/eq.。 The manufacturing method according to any one of claims 9 to 11, wherein the thermosetting resin capable of thermally bonding the polymer composite layer at a low temperature is an epoxy resin, the epoxy resin molecule comprising two or more epoxy functional groups. The epoxy group has an epoxy equivalent weight of 100 to 5000 g/eq. 如申請專利範圍第9至11項任一項所述之製造方法,其中導熱可低溫壓合高分子複合材料層之交聯劑可選自於含有兩個以上反應官能基之芳香族(aromatic)類或脂肪族(aliphatic)類所組成之群組,該反應官能基包含羧基 (carboxy group)、酸酐(anhydride group)、胺基(amine)、羥基(hydroxy group)或異氰酸基(isocyanate)。 The manufacturing method according to any one of claims 9 to 11, wherein the crosslinking agent for thermally conductively low-temperature-bonding the polymer composite layer is selected from aromatics having two or more reactive functional groups. a group consisting of a class or an aliphatic group, the reactive functional group comprising a carboxyl group (carboxy group), anhydride group, amine, hydroxy group or isocyanate. 如申請專利範圍第9項所述之導熱基板的製造方法,其中導熱可低溫壓合高分子複合材料層之熱可塑性高分子(thermal plastic polymer)需含有羧基(carboxy group)、胺基(amine)或羥基(hydroxy group),其可選自於玻璃轉移溫度在90℃以下的壓克力共聚物(Acrylic copolymer)、丁二烯橡膠共聚物(butadiene copolymer)、聚苯乙烯共聚物(polystyrene copolymer)或聚醯胺樹脂(polyamide)所組成之群組。 The method for manufacturing a thermally conductive substrate according to claim 9, wherein the thermal plastic polymer capable of thermally bonding the polymer composite layer at a low temperature is required to contain a carboxy group or an amine group. Or a hydroxy group, which may be selected from Acrylic copolymer, butadiene copolymer, polystyrene copolymer having a glass transition temperature of 90 ° C or lower. Or a group of polyamides. 如申請專利範圍第15項所述之製造方法,其中導熱可低溫壓合高分子複合材料層之熱固性樹脂為環氧樹脂,該環氧樹脂分子包含兩個以上之環氧官能基(epoxy group),環氧當量(epoxy equivalent weight)為100~5000 g/eq.。 The manufacturing method according to claim 15, wherein the thermosetting resin capable of thermally bonding the polymer composite layer at a low temperature is an epoxy resin, and the epoxy resin molecule comprises two or more epoxy groups. The epoxy equivalent weight is from 100 to 5000 g/eq. 如申請專利範圍第16項所述之製造方法,其中導熱可低溫壓合高分子複合材料層之交聯劑可選自於含有兩個以上反應官能基之芳香族(aromatic)類或脂肪族(aliphatic)類,該反應官能基包含羧基(carboxy group)、酸酐(anhydride group)、胺基(amine)、羥基(hydroxy group)或異氰酸基(isocyanate)。 The manufacturing method according to claim 16, wherein the crosslinking agent for thermally conductively low-temperature-bonding the polymer composite layer may be selected from an aromatic or aliphatic group having two or more reactive functional groups ( Aliphatic, the reactive functional group comprises a carboxy group, an anhydride group, an amine, a hydroxy group or an isocyanate.
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