TWI389128B - High temperature test system - Google Patents

Description

High temperature test system

This case is a high-temperature test system, which mainly provides a working environment where the object to be tested is nearing the design limit. In this severe environment, address addressing, data reading and writing, and logic control actions are used. The product has poor quality and has potential failure, and the present invention provides a high temperature test system with low structural cost and easy maintenance of the machine.

The existing high temperature testing machine has a parameter generator (Pattern Generator) behind its board (US7,131,040), and generates data to be written into the object to be tested via the parameter generator. As the board increases, the parameter is generated. The device also needs to be added. This design brings about an increase in hardware cost, but it does not necessarily give the manufacturer a test environment that can be trusted in practical operation. The final quality needs to pass through a normal temperature environment. The next parameter test to avoid unnecessary high temperature manslaughter products before, and the test process arrangement of the manufacturer makes the hardware cost of the previous investment become in vain. The reason is nothing more than ensuring that the manufacturer is The efficiency of use on a memory chip.

As described above, considering the reality that the customer pursues the commercial profit in practice, the present invention removes the excess parameter generator to reduce the material cost, and additionally designs a fixed set of lines, which can be easily controlled by the computer. Parameters, using this simple parameter, the file can still read and write parameters of the memory components, and smoothly carry out the relevant address decoding and control logic device normal operation.

The embodiments of the present invention are described in detail below, please refer to the figure first. 1 is a functional block diagram of the high temperature test system of the present invention. The high temperature test system of the present invention is, for example but not limited to, a high temperature test system of a dynamic random access memory module, wherein 200 is a heating chassis. The area has a heat insulating layer 210 covering the periphery to form an area which can be heated and kept at a constant temperature, and the heat source is designed from a heating blower 220, and has a heating duct and a fan inside (both not shown). The configuration is such that the rotation of the fan drives the hot air flow, and the hot air flow is injected into the interior of the chassis 200 via the heat transfer conduit inside the heat insulation layer 210 via the air flow port 230 at the A; on the other hand, the cold air inside the chassis 200 Also, due to the driving of the fan, the air guiding port 230 from the B is injected into the heating air blower 220 to be heated, and the heated air flow is injected into the inside of the chassis 200 through the air guiding port 230 at the A. In this way, a hot air flow is formed inside the chassis 200 from A to B (please refer to the direction of the arrow in FIG. 1), and since the thermal insulation layer 210 is wrapped around, the interior of the chassis 200 is The temperature will continue to rise until the temperature reaches the set temperature, and the heating stroke of the heating conduit in the heating blower 220 is stopped, so that the heating chamber can be maintained as long as the heating control is appropriately performed on the heating conduit. The temperature inside the zone 200 is within a certain range.

Referring to FIG. 1 again, in the design of the high-temperature test system of the present invention, it is mainly operated by a computer motherboard 100. As an example, the DDR2 dynamic random access memory is described below, and the motherboard 100 is programmed. Controlling, the signal of a DDR2 DRAM module 400 is transmitted to a bridge board 110, which is responsible for re-transforming the signal and increasing the driving current and then transmitting it. The signal buffer (not shown) performs the above work. In the design method of the present invention, the signal does not have the DDR2 data signal, and only the DDR2 command signal (address) and address signal (Address) ) a clock signal (Clock), in addition to a set of control signals (CTS), such a design It is avoided that the motherboard 100 has an error in executing the read command, because after the long-distance transmission, when the data is transmitted back through the bridge board 110, the correctness will be lost in the Timing. Will be recognized by the motherboard 100, thus causing data read errors.

In other words, the present invention is different from the conventional design in that the data bus of the DDR2 DRAM module 400 is removed, but in order to maintain the normal operation of the operating system, there is still one on the motherboard 100. The normally connected memory module is responsible for the normal operation of the system central processing unit (CPU, not shown). As for the signal slot of the DDR2 DRAM module 400 for testing, the data is used by the circuit layout. The bus bar is grounded through a resistor to form a low potential level for reading by the test program. Although the read data is not actually stored in the memory, the correctness of the data is not the design purpose of the present invention. As long as the memory in the DDR2 DRAM module 400 does perform the data writing and reading operations under the high-temperature operating environment, the design conditions of the high-temperature test device of the present case are met, and the filtering conditions are selected. Early deteriorating products, and this is to satisfy the commercial practice described above, because the correctness of the internal data of the memory is reasonable In the range of normal operating temperature, it is completed by various test patterns. If it is verified under high temperature and harsh environment, it will not meet the operating specifications of the memory, and the test results will be in vain. Troubles and increased production costs.

Referring again to FIG. 1, after the DDR2 signal is pushed by the bridge board 110, it will continue to be transmitted to a driving board 120, which is fixed in a space of about 40 ° C outside the heating cabinet area 200. The heat insulation layer 210 is on.

Referring to FIG. 2, the drive board 120 is also configured with an array of buffers. Blocks, each group of buffer blocks pushes several DDR2 DRAM modules 400 according to their Fan Out capability. For example, in Figure 2, each buffer block is responsible for pushing 3 DDR2 dynamic random access memory module 400. The shelf board 130 is placed in the high temperature region of the heating chassis area 200, and the DDR2 device under test (DUT) to be tested is respectively assembled on the shelf board 130. The carrier board 130 and the driver board 120 are mutually connected to each other through the signal connector 122 disposed on the driving board 120, and finally transmit the signal from the motherboard 100 to each DDR2 dynamic random access memory to be tested. Module 400. Through the sliding rail design inside the heating chassis area 200, the receiving frame 130 can be placed on the sliding rail to combine and separate the driving plate 120. After the high temperature test is completed, the receiving frame 130 can be After being taken out from the heating chassis area 200, all the DDR2 dynamic random access memory modules 400 to be tested are directly obtained, and the normal temperature reading and writing test of the next station is entered. It should be noted that the temperature inside the heating chassis area 200 is about 80 ° C ~ 110 ° C, and the temperature outside the heating chassis area 200 is about 40 ° C.

Therefore, by using the above-mentioned manner, through a suitable buffer circuit and power line design, a plurality of DDR2 dynamic random access memory modules 400 located on the carrier board 130 can be simultaneously driven by one driving board 120, not only As shown in FIG. 2, the driving board 120 also transmits the DDR2 signal to the driving board 120 of the next stage, so that a plurality of DDR2 dynamic random access memory modules can be simultaneously tested on one motherboard 100. The 400's features significantly reduce the assembly and maintenance costs of traditional multi-wafer high temperature test system designs.

Referring to FIG. 3 again, FIG. 3 is a block diagram of the memory test circuit, wherein the buffer (Buffer) 112 is located on the bridge board 110 for signal buffering of the DDR2 signal (not shown) and the control signal (not shown). Control signal The transmission can be completed through a parallel data port (not shown) of the computer, which is used to control the buffer of the subsequent stage circuit and the data level circuit 131. The purpose of the data leveling circuit 131 is to form a simple transistor circuit design and a memory data busbar to form a logic level for adjusting the data bus of the memory to be tested, that is, through a computer. The control output is used to achieve writing of FF or 00 data to the DDR2 DRAM module 400. It can be seen that the design of the present invention removes the traditional complicated parameter generator, and instead uses a simple transistor circuit, although this method can only produce FF and 00 data forms, but As described above, it is appropriate to test the memory for different parameters at room temperature, and the design of the present invention can achieve the screening purpose of the memory high temperature test. At the same time, the design advantages of the present case include better equipment durability. Please refer to FIG. 3 again. It can be seen from FIG. 3 that the component configuration of the present invention is mainly room temperature, and the main circuit components are arranged to the heating chassis area 200. An area of approximately 40 ° C externally, the area is supplemented with a heat-dissipating airflow design to ensure that most of the electronic components are operating within the normal operating temperature range, thereby increasing the reliability of the equipment and further reducing the number of equipment maintenance.

Another novel design of the present invention is to connect the carrier plate 130 to the driver board 120 via the signal connector 122 disposed on the driving board 120. Referring to FIG. 2, the carrier is in the rack. A set of gold fingers 132 is disposed on the board 130 for signal transmission. When the rack board 130 passes through the heat insulation layer 210, it is connected to the signal connector 122 on the driving board 120. The design achieves two advantages. First, it solves the problem that the connection line derived from the DDR2 signal line is difficult to connect. Second, the signal connector 122 is isolated on the periphery of the heating area, which reduces thermal shock and increases system insertion. The number of times you use it.

Referring to FIG. 3 again, the power supply design of the present invention uses an independent power supply 300 to provide the power required for the operation of the high-volume DDR2 DRAM module 400, and also passes the control signal of the computer motherboard 100. The power line on the driving board 120 can be controlled. When the rack board 130 is to be detached from the driving board 120, the system performs power-off treatment on the power source, and when the rack board 130 is loaded into the driving board 120 again. The purpose of actively recovering the power output is to protect the safety of the test product. These control processes can be achieved through the design of the software program, and the power circuit design on the drive board 120.

It can be seen from the above technical description that the high temperature test system of the present invention has many advantages such as low cost, simple assembly and convenient system maintenance, and the rate is completely different from the existing high temperature test system, but can reach the traditional high temperature. The same function of the test equipment is a novel and progressive technical creation.

Therefore, the system design of the present case cannot be said to be an important creation of a test technique, and the DDR2 memory is an illustrative example disclosed in the present disclosure, which is a preferred embodiment, and is a partial modification or modification. Those who are derived from the technical ideas of this case and who are easily acquainted by those who are familiar with the art are not subject to the patent rights of this case.

In summary, this case, regardless of its purpose, means and efficacy, is showing its technical characteristics that are different from the conventional ones, and its first creation is practical, and it is also in compliance with the requirements of the patent application. I will be granted a patent at an early date.

100‧‧‧Computer motherboard

110‧‧‧Bridge board

112‧‧‧buffer

120‧‧‧Drive board

122‧‧‧Signal connector

130‧‧‧Shelf board

131‧‧‧ data level circuit

132‧‧‧Gold Fingers

200‧‧‧heating chassis

210‧‧‧Insulation

220‧‧‧heating blower

230‧‧‧Hot air inlet

300‧‧‧Power supply

400‧‧‧DDR2 Dynamic Random Access Memory Module

FIG. 1 is a schematic diagram showing a block diagram of a high temperature test system according to a preferred embodiment of the present invention.

2 is a schematic view showing a high temperature test according to a preferred embodiment of the present invention Schematic diagram of the system.

FIG. 3 is a schematic diagram showing a block diagram of the memory test circuit of the present invention.

100‧‧‧Computer motherboard

110‧‧‧Bridge board

200‧‧‧heating chassis

210‧‧‧Insulation

220‧‧‧heating blower

230‧‧‧Hot air inlet

400‧‧‧DDR2 Dynamic Random Access Memory Module

Claims (5)

A high temperature test system comprising: at least one computer system capable of outputting a memory signal to an external circuit module and having a standard input/output control interface to provide a control signal necessary for the test device system; at least one signal bridge device The signal buffering component can provide the memory signal buffering and then output to increase its fan-out capability; a power supply for providing power required by each circuit module; at least one shelf device, which can be embedded in several The memory module of the independent operation, the rack device and the bridge device can be connected and disconnected from each other, wherein the rack device has a data level circuit, and the circuit is connected with the memory data bus and accepts the computer system The control is to provide data writing parameters to the memory; a heating chassis, the body has a heat insulating function and has a heating device for heating and convection of the air inside the chassis; wherein the computer system and the signal bridge device And the power supply unit is disposed outside the heating chassis, and the rack device and the upper thereof The memory module group stand for the internal heating of the enclosure under the high temperature environment of the memory module reader to test the body's functions. The high temperature test system of claim 1, wherein the shelf device further has a gold finger structure for transmitting a memory signal and providing a connector with the connector on the bridge device. The high temperature test system of claim 2, wherein the signal on the gold finger further comprises a control signal from the computer system. The high temperature test system of claim 2, wherein the gold finger thread penetrates the heat insulation board of the heating chassis and is outside the heating chassis The bridging device is combined. The high temperature test system of claim 1, wherein the bridge device can transmit the signal to the shelf device and transmit the signal to the next level bridge device to form a signal serial connection structure.