TWI388069B - Light emitting diode for top view type and side view type - Google Patents
Light emitting diode for top view type and side view type Download PDFInfo
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- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
Description
本發明是關於一種發光二極體(light emitting diode)，且更特定而言，是關於一種具有不僅可用於頂視型而且可用於側視型中之引線結構(lead structure)的組合頂視型與側視型發光二極體。BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a light emitting diode, and more particularly to a combined top view type having a lead structure that can be used not only in a top view type but also in a side view type. With a side view type light emitting diode.
發光二極體基本上為半導體正負接面二極體(PN junction diode)。若將正型與負型半導體相互鍵結且接著對其施加電壓，則正型半導體之電洞朝向負型半導體移動，以聚集至其中心層中；然而，負型半導體之電子朝向正型半導體移動，以聚集至為導帶(conduction band)中之最低位置的中心層中。電子自然地落入價帶(valence band)中之電洞中。此時，輻射對應於導帶與價帶間之位準差(亦即，能隙)的能量。以光之形式來輻射能量。The light emitting diode is basically a semiconductor positive and negative junction PMOS junction diode. If the positive and negative semiconductors are bonded to each other and then a voltage is applied thereto, the holes of the positive semiconductor are moved toward the negative semiconductor to be concentrated in the center layer; however, the electrons of the negative semiconductor are oriented toward the positive semiconductor Move to gather into the center layer of the lowest position in the conduction band. The electrons naturally fall into the holes in the valence band. At this time, the radiation corresponds to the energy of the level difference (ie, the energy gap) between the conduction band and the valence band. Radiation energy is emitted in the form of light.
因為此發光二極體可以低電壓來發射高效率光，所以發光二極體已用於電氣設備、遠端控制器、電子顯示板、指示器以及各種自動裝置。特定而言，因為資訊電信裝置變得小而薄，所以更縮小電阻器、電容器、噪音濾波器以及其類似物，其為各種裝置組件。為了將發光二極體直接安裝於印刷電路板(printed circuit board)或其類似物上，已製造出表面粘著裝置(SMD,Surface Mount Device)型發光二極體。根據使用以頂視型與側視型來製造此SMD型發光二極體。Since the light-emitting diode can emit high-efficiency light at a low voltage, the light-emitting diode has been used for electrical equipment, remote controllers, electronic display panels, indicators, and various automatic devices. In particular, since information telecommunication devices become small and thin, resistors, capacitors, noise filters, and the like are further reduced, which are various device components. In order to mount the light-emitting diode directly on a printed circuit board or the like, a surface mount device (SMD) type light-emitting diode has been manufactured. This SMD type light-emitting diode is manufactured in a top view type and a side view type depending on the use.
將參看圖1a與1b來論述通用頂視型發光二極體。A general top view type light emitting diode will be discussed with reference to Figs. 1a and 1b.
圖1a與1b中所示之頂視型發光二極體包含其中形成反射洞25之基板20、安裝於反射洞25中的發光二極體晶片10、形成於基板20上的第一與第二引線30與40、封裝發光二極體晶片10之模塑構件(molding member)50，以及第一與第二導線60與70。較佳地，將第一與第二引線30與40之預定區域曝露於模塑構件50的外部。可以各種形狀來形成模塑構件50。The top view type light emitting diode shown in FIGS. 1a and 1b includes a substrate 20 in which the reflection hole 25 is formed, a light emitting diode wafer 10 mounted in the reflection hole 25, and first and second forms formed on the substrate 20. Leads 30 and 40, a molding member 50 encapsulating the LED wafer 10, and first and second leads 60 and 70. Preferably, predetermined regions of the first and second leads 30 and 40 are exposed to the outside of the molded member 50. The molded member 50 can be formed in various shapes.
根據具有以上所描述之組態的發光二極體，自發光二極體晶片10所發射之光藉由反射洞25向上反射，且經由模塑構件50輻射至外部。According to the light-emitting diode having the configuration described above, the light emitted from the light-emitting diode wafer 10 is reflected upward by the reflection hole 25 and radiated to the outside via the molding member 50.
將參看圖2a與2b來論述通用側視型發光二極體。圖2a與2b中所示之側視型發光二極體包含基板110、形成於基板110上的第一與第二引線120與130、安裝於第二引線上之發光二極體晶片140、形成於基板上以將自發光二極體晶片140所發射之光向橫向反射的反射器150，以及封裝發光二極體晶片140之模塑構件180。A general side view type light emitting diode will be discussed with reference to Figs. 2a and 2b. The side view type light emitting diode shown in FIGS. 2a and 2b includes a substrate 110, first and second leads 120 and 130 formed on the substrate 110, and a light emitting diode chip 140 mounted on the second lead. A reflector 150 that reflects light emitted from the self-luminous diode wafer 140 laterally, and a molded member 180 that encapsulates the LED wafer 140 are disposed on the substrate.
在具有以上所描述之組態的側視型發光二極體中，將第一與第二引線鍵結於預定印刷電路板上，使得自發光二極體晶片所發射之光輻射至側表面。主要將此側視型發光二極體用作行動通信終端機之液晶顯示器中之背光單元(backlight unit)的光源。In the side view type light emitting diode having the configuration described above, the first and second leads are bonded to a predetermined printed circuit board such that light emitted from the light emitting diode wafer is radiated to the side surface. This side view type light emitting diode is mainly used as a light source of a backlight unit in a liquid crystal display of a mobile communication terminal.
如以上之描述，因為頂視型與側視型發光二極體具有不同結構，所以應根據應用產品之使用來區別製造各別發光二極體。因此，若多樣化產品群，則存在每一產品需要額外生產設備的問題。As described above, since the top view type and the side view type light emitting diodes have different structures, the respective light emitting diodes should be distinguished according to the use of the application product. Therefore, if the product group is diversified, there is a problem that each product requires additional production equipment.
同時，發光二極體之亮度與施加至發光二極體晶片之電流成比例，且施加至發光二極體晶片的電流與自發光二極體晶片所輻射之熱成比例。因此，應將高電流施加至發光二極體，以增加其亮度。然而，因為發光二極體晶片由於發光二極體晶片所輻射之熱而受損壞，所以存在不可無限施加高電流的問題。在上述習知發光二極體中，經由引線來輻射自發光二極體晶片所輻射之熱。因為在單向中形成此引線或散熱塊(heat slug)，所以亦存在熱輻射並不有效之問題。At the same time, the brightness of the light-emitting diode is proportional to the current applied to the light-emitting diode wafer, and the current applied to the light-emitting diode wafer is proportional to the heat radiated from the self-luminous diode wafer. Therefore, a high current should be applied to the light emitting diode to increase its brightness. However, since the light-emitting diode wafer is damaged by the heat radiated from the light-emitting diode wafer, there is a problem that a high current cannot be applied infinitely. In the above conventional light-emitting diode, heat radiated from the light-emitting diode wafer is radiated via a lead. Since this lead or heat slug is formed in one direction, there is also a problem that heat radiation is not effective.
設想本發明以解決先前技術中之上述問題。本發明之一目標為提供一種不僅可用於頂視型而且可用於側視型中之發光二極體。The present invention is conceived to solve the above problems in the prior art. It is an object of the present invention to provide a light-emitting diode that can be used not only in a top view type but also in a side view type.
根據用於達成此目標之本發明的一個態樣，提供一種發光二極體，其包含基板；以預定間隔相互隔開地形成於基板上的第一與第二引線；以及安裝於第一與第二引線中之任一者上之發光二極體晶片，其中第一與第二引線經形成以在基板的同一側表面及後表面上延伸。According to an aspect of the present invention for achieving the object, there is provided a light emitting diode comprising: a substrate; first and second leads formed on the substrate at a predetermined interval from each other; and being mounted on the first and A light emitting diode chip on any of the second leads, wherein the first and second leads are formed to extend on the same side and back surfaces of the substrate.
發光二極體可更包含封裝發光二極體晶片之模塑構件。The light emitting diode may further comprise a molded member encapsulating the light emitting diode chip.
發光二極體可更包含形成於基板上之反射器。The light emitting diode may further include a reflector formed on the substrate.
第一與第二引線可經形成以延伸至基板的同一另一側表面上。The first and second leads may be formed to extend onto the same other side surface of the substrate.
其上安裝發光二極體晶片之引線可經形成為大於另一引線。A lead on which the light emitting diode chip is mounted may be formed to be larger than the other lead.
在下文中，將參看附圖來詳細描述本發明之較佳實施例。Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
圖3a至3d分別為根據本發明之第一實施例之組合頂視型與側視型發光二極體的透視圖、平面圖、側視圖以及後視圖。3a to 3d are respectively a perspective view, a plan view, a side view, and a rear view of a combined top view type and side view type light emitting diode according to a first embodiment of the present invention.
圖3a至3d中所示之組合頂視型與側視型發光二極體300包含基板310、第一引線(first lead)320、第二引線330、發光二極體晶片340、反射器350、第一導線(first wire)360、第二導線370，以及模塑構件380。The combined top view and side view type LEDs 300 shown in FIGS. 3a to 3d include a substrate 310, a first lead 320, a second lead 330, a light emitting diode wafer 340, a reflector 350, A first wire 360, a second wire 370, and a molded member 380.
第一與第二引線320與330以預定間隔相互隔開地形成於基板310上。第一與第二引線320與330在同一方向中延伸，且形成於基板310之同一側表面與後表面上而被曝露。從而，在基板的側表面上同時形成第一與第二引線320與330。The first and second leads 320 and 330 are formed on the substrate 310 at a predetermined interval from each other. The first and second leads 320 and 330 extend in the same direction and are formed on the same side surface and rear surface of the substrate 310 to be exposed. Thereby, the first and second leads 320 and 330 are simultaneously formed on the side surface of the substrate.
儘管在此實施例中僅在基板之側表面與後表面上形成第一與第二引線，但第一與第二引線亦可經形成以延伸至基板的另一側表面。同時，儘管在此實施例中以矩形形狀來展示發光二極體，但本發明並不限於此形狀。亦即，發光二極體可具有正方形之形狀且可以各種形狀來形成。Although the first and second leads are formed only on the side and rear surfaces of the substrate in this embodiment, the first and second leads may also be formed to extend to the other side surface of the substrate. Meanwhile, although the light emitting diode is shown in a rectangular shape in this embodiment, the present invention is not limited to this shape. That is, the light emitting diodes may have a square shape and may be formed in various shapes.
發光二極體晶片340形成於基板310上。第一導線360電連接發光二極體晶片340與第一引線320，且第二導線370電連接發光二極體晶片340與第二引線330。此時，可使用熱傳導樹脂來形成基板310，以使自發光二極體晶片340所發射之熱得以輻射。儘管在此實施例中，在基板310上形成發光二極體晶片340，但可在第一或第二引線320或330上形成發光二極體晶片340。A light emitting diode wafer 340 is formed on the substrate 310. The first wire 360 electrically connects the light emitting diode chip 340 with the first lead 320, and the second wire 370 electrically connects the light emitting diode chip 340 and the second lead 330. At this time, the substrate 310 may be formed using a heat conductive resin to radiate heat emitted from the self-luminous diode wafer 340. Although a light emitting diode wafer 340 is formed on the substrate 310 in this embodiment, the light emitting diode wafer 340 may be formed on the first or second lead 320 or 330.
反射器350經形成以在基板310上沿外圓周具有預定高度，以用於聚集自發光二極體晶片340所發射的光。The reflector 350 is formed to have a predetermined height along the outer circumference on the substrate 310 for collecting light emitted from the self-luminous diode wafer 340.
在基板上之反射器350之內部中形成模塑構件380，以封裝發光二極體晶片340。此時，藉由將諸如液體環氧(epoxy)或矽氧(silicone)樹脂的材料塗覆至反射器350中且接著在預定時間內加熱並固化此材料來形成模塑構件380。另外，可在模塑構件380中混合吸收自發光二極體晶片340所發射之光且將光波長轉換成預定波長的磷光體。A molding member 380 is formed in the interior of the reflector 350 on the substrate to encapsulate the light emitting diode wafer 340. At this time, the molded member 380 is formed by applying a material such as a liquid epoxy or a silicone resin to the reflector 350 and then heating and curing the material for a predetermined time. In addition, a phosphor that absorbs light emitted from the light-emitting diode wafer 340 and converts the wavelength of light into a predetermined wavelength may be mixed in the molding member 380.
根據上述組態，因為第一與第二引線320與330形成於側表面與後表面上，所以當發光二極體作為頂視型來使用時，將基板之後表面安裝於預定印刷電路板上，而當發光二極體作為側視型來使用時，將基板之側表面安裝於預定印刷電路板上。因此，若使用上述組合頂視型與側視型發光二極體300，則無需根據產品的使用來區別製造發光二極體。According to the above configuration, since the first and second leads 320 and 330 are formed on the side surface and the rear surface, when the light emitting diode is used as a top view type, the rear surface of the substrate is mounted on a predetermined printed circuit board, When the light emitting diode is used as a side view type, the side surface of the substrate is mounted on a predetermined printed circuit board. Therefore, if the above-described combined top view type and side view type light emitting diodes 300 are used, it is not necessary to distinguish the manufacture of the light emitting diodes according to the use of the products.
圖4a至4d分別為根據本發明之第二實施例之組合頂視型與側視型發光二極體的透視圖、平面圖、側視圖以及後視圖。第二實施例不同於第一實施例，其在於根據本發明之第二實施例之組合頂視型與側視型發光二極體400具有多個發光二極體晶片(在此實施例中為三個發光二極體晶片)以及多個第一與第二引線；而兩個實施例的其他組件幾乎相同。因此，以下將僅描述不同部分。4a to 4d are a perspective view, a plan view, a side view, and a rear view, respectively, of a combined top view type and side view type light emitting diode according to a second embodiment of the present invention. The second embodiment is different from the first embodiment in that the combined top view type and side view type light emitting diode 400 according to the second embodiment of the present invention has a plurality of light emitting diode chips (in this embodiment, Three light emitting diode wafers) and a plurality of first and second leads; while the other components of the two embodiments are nearly identical. Therefore, only the different parts will be described below.
圖4a至4d中所示之組合頂視型與側視型發光二極體400包含基板410；第一引線420a、420b以及420c；第二引線430a、430b以及430c；發光二極體晶片440a、440b以及440c；反射器450；導線460a、460b以及460c；以及模塑構件480。The combined top-view and side-view LEDs 400 shown in Figures 4a to 4d comprise a substrate 410; first leads 420a, 420b and 420c; second leads 430a, 430b and 430c; a light-emitting diode wafer 440a, 440b and 440c; reflector 450; wires 460a, 460b, and 460c; and molded member 480.
可以預定間隔相互隔開地形成第一與第二引線。在本實施例中，以第一引線420a、第二引線430a、第二引線430b、第一引線420b、第二引線430c，以及第一引線420c之次序來相互隔開地形成第一與第二引線。然而，第一與第二引線的排列次序並不限於此次序。亦即，可交替地排列第一與第二引線。此外，可以各種次序來排列第一與第二引線。The first and second leads may be formed spaced apart from each other by a predetermined interval. In this embodiment, the first lead 420a, the second lead 430a, the second lead 430b, the first lead 420b, the second lead 430c, and the first lead 420c are formed to be spaced apart from each other to form the first and second portions. lead. However, the order in which the first and second leads are arranged is not limited to this order. That is, the first and second leads may be alternately arranged. Further, the first and second leads may be arranged in various orders.
第一與第二引線經形成以在同一方向中延伸，使得第一與第二引線曝露於基板上之同一側表面與後表面上。亦即，在基板之側表面上同時形成第一與第二引線420a、420b、420c、430a、430b以及430c。儘管在此實施例中僅在基板之側表面與後表面上形成第一與第二引線，但第一與第二引線可經形成以延伸至基板的另一側表面。The first and second leads are formed to extend in the same direction such that the first and second leads are exposed on the same side and back surfaces on the substrate. That is, the first and second leads 420a, 420b, 420c, 430a, 430b, and 430c are simultaneously formed on the side surface of the substrate. Although the first and second leads are formed only on the side surface and the rear surface of the substrate in this embodiment, the first and second leads may be formed to extend to the other side surface of the substrate.
分別在第二引線430a、430b以及430c上安裝發光二極體晶片440a、440b以及440c。第二引線可經形成為大於第一引線。或者，可在第一引線上安裝發光二極體晶片。此時，發光二極體晶片440a、440b以及440c可分別為發射紅色R、綠色G以及藍色B波長之發光二極體晶片。此外，可使用具有各種波長的發光二極體晶片。Light-emitting diode wafers 440a, 440b, and 440c are mounted on the second leads 430a, 430b, and 430c, respectively. The second lead may be formed to be larger than the first lead. Alternatively, a light emitting diode chip can be mounted on the first lead. At this time, the light-emitting diode wafers 440a, 440b, and 440c may be light-emitting diode wafers emitting red R, green G, and blue B wavelengths, respectively. Further, a light emitting diode wafer having various wavelengths can be used.
導線460a、460b以及460c分別電連接發光二極體晶片與第一引線。The wires 460a, 460b, and 460c electrically connect the light emitting diode chip and the first lead, respectively.
在基板上之反射器450之內部中形成模塑構件480，以封裝發光二極體晶片。另外，可在模塑構件480中混合吸收自發光二極體晶片所發射之光且將光波長轉換成預定波長的磷光體。A molded member 480 is formed in the interior of the reflector 450 on the substrate to encapsulate the light emitting diode wafer. In addition, a phosphor that absorbs light emitted from the light-emitting diode wafer and converts the wavelength of light into a predetermined wavelength may be mixed in the molding member 480.
儘管在此實施例中說明了具有三個發光二極體晶片、三個第一引線以及三個第二引線之發光二極體，但此實施例僅為用於描述之例示性實施例。亦即，發光二極體晶片或第一與第二引線的數目並不限於此數目。Although a light emitting diode having three light emitting diode wafers, three first leads, and three second leads is illustrated in this embodiment, this embodiment is merely an illustrative embodiment for the description. That is, the number of the light emitting diode chips or the first and second leads is not limited to this number.
圖5a至5d分別為根據本發明之第三實施例之組合頂視型與側視型發光二極體的透視圖、平面圖、側視圖以及後視圖。第三實施例不同於第二實施例，其在於根據本發明之第三實施例之組合頂視型與側視型發光二極體500並不具有反射器；而兩個實施例的其他組件幾乎相同。因此，以下將僅描述不同部分。5a to 5d are respectively a perspective view, a plan view, a side view, and a rear view of a combined top view type and side view type light emitting diode according to a third embodiment of the present invention. The third embodiment is different from the second embodiment in that the combined top view type and side view type light emitting diodes 500 according to the third embodiment of the present invention do not have a reflector; and the other components of the two embodiments are almost the same. Therefore, only the different parts will be described below.
圖5a至5d中所示之組合頂視型與側視型發光二極體500包含：基板510；以預定間隔相互隔開地形成於基板510上之第一引線520a、520b以及520c與第二引線530a、530b以及530c；分別安裝於第二引線上的發光二極體晶片540a、540b以及540c；分別將發光二極體晶片電連接至第一引線之導線560a、560b以及560c；以及封裝發光二極體晶片之模塑構件580。The combined top view and side view type light emitting diode 500 shown in FIGS. 5a to 5d includes: a substrate 510; first leads 520a, 520b, and 520c and second formed on the substrate 510 at a predetermined interval from each other Lead wires 530a, 530b, and 530c; light emitting diode chips 540a, 540b, and 540c respectively mounted on the second leads; wires 560a, 560b, and 560c that electrically connect the light emitting diode chips to the first leads, respectively; and package light A molded member 580 of a diode wafer.
以上描述僅為根據本發明之發光二極體的例示性實施例，使得本發明並不限於此等例示性實施例。應以熟習此項技術者可在不脫離如隨附申請專利範圍所界定之本發明之範疇的情況下對本發明實施各種修改與改變之程度來界定本發明的實際範疇。The above description is merely illustrative embodiments of light emitting diodes in accordance with the present invention, such that the invention is not limited to such exemplary embodiments. The actual scope of the invention may be devised by those skilled in the art, without departing from the scope of the invention as defined by the appended claims.
如以上之描述，根據本發明，在基板之同一側表面與後表面上形成具有不同極性的引線，藉此不僅可在頂視型而且可在側視型中使用發光二極體。因此，存在無需根據應用產品之使用來區別製造發光二極體使得可降低產品開發成本且可簡化產品管理的優點。As described above, according to the present invention, lead wires having different polarities are formed on the same side surface and rear surface of the substrate, whereby the light-emitting diode can be used not only in the top view type but also in the side view type. Therefore, there is an advantage that it is possible to reduce the product development cost and simplify the product management without separately making the light emitting diode according to the use of the application product.
另外，存在增加引線之面積藉此可增強熱輻射效率之優點。In addition, there is an advantage that the area of the lead is increased to thereby enhance the heat radiation efficiency.
10．．．發光二極體晶片10. . . Light-emitting diode chip
20．．．基板20. . . Substrate
25．．．反射洞25. . . Reflection hole
30．．．第一引線30. . . First lead
40．．．第二引線40. . . Second lead
50．．．模塑構件50. . . Molded component
60．．．第一導線60. . . First wire
70．．．第二導線70. . . Second wire
110．．．基板110. . . Substrate
120．．．第一引線120. . . First lead
130．．．第二引線130. . . Second lead
140．．．發光二極體晶片140. . . Light-emitting diode chip
150．．．反射器150. . . reflector
180．．．模塑構件180. . . Molded component
300．．．組合頂視型與側視型發光二極體300. . . Combined top view type and side view type light emitting diode
310．．．基板310. . . Substrate
320．．．第一引線320. . . First lead
330．．．第二引線330. . . Second lead
340．．．發光二極體晶片340. . . Light-emitting diode chip
350．．．反射器350. . . reflector
360．．．第一導線360. . . First wire
370．．．第二導線370. . . Second wire
380．．．模塑構件380. . . Molded component
400．．．組合頂視型與側視型發光二極體400. . . Combined top view type and side view type light emitting diode
410．．．基板410. . . Substrate
420a．．．第一引線420a. . . First lead
420b．．．第一引線420b. . . First lead
420c．．．第一引線420c. . . First lead
430a．．．第二引線430a. . . Second lead
430b．．．第二引線430b. . . Second lead
430c．．．第二引線430c. . . Second lead
440a．．．發光二極體晶片440a. . . Light-emitting diode chip
440b．．．發光二極體晶片440b. . . Light-emitting diode chip
440c．．．發光二極體晶片440c. . . Light-emitting diode chip
450．．．反射器450. . . reflector
460a．．．導線460a. . . wire
460b．．．導線460b. . . wire
460c．．．導線460c. . . wire
480．．．模塑構件480. . . Molded component
500．．．組合頂視型與側視型發光二極體500. . . Combined top view type and side view type light emitting diode
510．．．基板510. . . Substrate
520a．．．第一引線520a. . . First lead
520b．．．第一引線520b. . . First lead
520c．．．第一引線520c. . . First lead
530a．．．第二引線530a. . . Second lead
530b．．．第二引線530b. . . Second lead
530c．．．第二引線530c. . . Second lead
540a．．．發光二極體晶片540a. . . Light-emitting diode chip
540b．．．發光二極體晶片540b. . . Light-emitting diode chip
540c．．．發光二極體晶片540c. . . Light-emitting diode chip
560a．．．導線560a. . . wire
560b．．．導線560b. . . wire
560c．．．導線560c. . . wire
580．．．模塑構件580. . . Molded component
圖1a與1b分別為通用頂視型發光二極體之透視圖以及剖視圖。1a and 1b are respectively a perspective view and a cross-sectional view of a universal top view type light emitting diode.
圖2a與2b分別為通用側視型發光二極體之透視圖以及剖視圖。2a and 2b are a perspective view and a cross-sectional view, respectively, of a universal side view type light emitting diode.
圖3a至3d分別為根據本發明之第一實施例之組合頂視型與側視型發光二極體的透視圖、平面圖、側視圖以及後視圖。3a to 3d are respectively a perspective view, a plan view, a side view, and a rear view of a combined top view type and side view type light emitting diode according to a first embodiment of the present invention.
圖4a至4d分別為根據本發明之第二實施例之組合頂視型與側視型發光二極體的透視圖、平面圖、側視圖以及後視圖。4a to 4d are a perspective view, a plan view, a side view, and a rear view, respectively, of a combined top view type and side view type light emitting diode according to a second embodiment of the present invention.
圖5a至5d分別為根據本發明之第三實施例之組合頂視型與側視型發光二極體的透視圖、平面圖、側視圖以及後視圖。5a to 5d are respectively a perspective view, a plan view, a side view, and a rear view of a combined top view type and side view type light emitting diode according to a third embodiment of the present invention.
400．．．組合頂視型與側視型發光二極體400. . . Combined top view type and side view type light emitting diode
410．．．基板410. . . Substrate
420a．．．第一引線420a. . . First lead
420b．．．第一引線420b. . . First lead
420c．．．第一引線420c. . . First lead
430a．．．第二引線430a. . . Second lead
430b．．．第二引線430b. . . Second lead
430c．．．第二引線430c. . . Second lead
440a．．．發光二極體晶片440a. . . Light-emitting diode chip
440b．．．發光二極體晶片440b. . . Light-emitting diode chip
440c．．．發光二極體晶片440c. . . Light-emitting diode chip
450．．．反射器450. . . reflector
460a．．．導線460a. . . wire
460b．．．導線460b. . . wire
460c．．．導線460c. . . wire
480．．．模塑構件480. . . Molded component
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| US8258526B2 (en) * | 2008-07-03 | 2012-09-04 | Samsung Led Co., Ltd. | Light emitting diode package including a lead frame with a cavity |
| KR101107770B1 (en) * | 2009-05-26 | 2012-01-20 | 일진반도체 주식회사 | LED package and back light unit |
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| DE102013110733A1 (en) | 2013-09-27 | 2015-04-02 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component |
| KR20160045453A (en) * | 2014-10-17 | 2016-04-27 | 서울반도체 주식회사 | Back light unit and light emitting device package for side-view |
| KR101678790B1 (en) * | 2015-08-26 | 2016-11-23 | 주식회사원광전자 | package with LED and illumination sensor |
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