TWI385455B - Transflective pixel structure and display pane - Google Patents
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Description
本發明是有關於一種畫素結構以及具有此畫素結構之顯示面板,且特別是有關於一種半穿透半反射式畫素結構以及具有此半穿透半反射式畫素結構之顯示面板。The present invention relates to a pixel structure and a display panel having the pixel structure, and more particularly to a transflective pixel structure and a display panel having the transflective pixel structure.
現今社會多媒體技術相當發達,多半受惠於半導體元件或顯示裝置的進步。就顯示器而言,具有高畫質、空間利用效率佳、低消耗功率、無輻射等優越特性之液晶顯示器已逐漸成為市場之主流。一般液晶顯示器可分為穿透式、反射式,以及半穿透半反射式三大類。其中半穿透半反射式液晶顯示器可同時在光線充足與光線不足的情形下使用,因此可應用的範圍較廣。Today's social multimedia technology is quite developed, and most of them benefit from the advancement of semiconductor components or display devices. As far as the display is concerned, a liquid crystal display having superior characteristics such as high image quality, good space utilization efficiency, low power consumption, and no radiation has gradually become the mainstream of the market. Generally, liquid crystal displays can be classified into three types: transmissive, reflective, and transflective. The transflective liquid crystal display can be used in both light and low light, so it can be applied in a wide range.
就半穿透半反射式液晶顯示器而言,其可同時利用背光源以及外界光源進行顯示。一般而言,半穿透半反射式液晶顯示器包括畫素陣列基板、對向基板以及介於上述二基板之液晶層。畫素陣列基板上之畫素結構具有穿透區與反射區,且穿透區內是設置透明畫素電極,而反射區內則是設置反射畫素電極。In the case of a transflective liquid crystal display, it can simultaneously display using a backlight and an external light source. In general, a transflective liquid crystal display includes a pixel array substrate, a counter substrate, and a liquid crystal layer interposed between the two substrates. The pixel structure on the pixel array substrate has a penetrating region and a reflecting region, and a transparent pixel electrode is disposed in the penetrating region, and a reflective pixel electrode is disposed in the reflecting region.
一般來說,為了同時顧及反射畫素電極的反射率以及透明畫素電極的穿透率,反射畫素電極之厚度往往明顯大於透明畫素電極的厚度。因此,反射區與穿透區之交界處,亦即反射畫素電極與透明畫素電極的交界處,便存在高度差。即使後續在反射畫素電極以及透明畫素電極上覆蓋上一層配向材料層,此高度差仍然存在。由於此高度差的存在,當後續對配向材料層進行摩擦配向處理時,往往會在此高度差處發生反射畫素電極剝離的情形。這是因為當使用滾輪對配向材料層進行摩擦配向處理時,滾輪由穿透區往較高的反射區進行滾動時,滾輪在反射區與穿透區之間的高度差之處會形成一向上的應力。而當此向上的應力大於反射畫素電極與其底下之膜層之間的附著力時,便會發生反射畫素電極剝離的現象。In general, in order to simultaneously take into account the reflectance of the reflective pixel electrode and the transmittance of the transparent pixel electrode, the thickness of the reflective pixel electrode is often significantly larger than the thickness of the transparent pixel electrode. Therefore, there is a height difference at the boundary between the reflective region and the penetrating region, that is, at the boundary between the reflective pixel electrode and the transparent pixel electrode. Even if a layer of alignment material is subsequently applied over the reflective pixel electrode and the transparent pixel electrode, this height difference still exists. Due to the existence of this height difference, when the alignment material layer is subjected to the rubbing alignment treatment, the peeling of the reflective pixel electrode tends to occur at this height difference. This is because when the roller is used for the rubbing alignment treatment of the alignment material layer, when the roller rolls from the penetration region to the higher reflection region, the roller forms an upward difference between the reflection region and the penetration region. Stress. When the upward stress is greater than the adhesion between the reflective pixel electrode and the underlying film layer, the phenomenon that the reflective pixel electrode is peeled off occurs.
因此,本發明提出一種半穿透半反射式畫素結構以及具有此半穿透半反射式畫素結構之顯示面板,以解決傳統於半穿透半反射式畫素結構進行配向處理時會使反射畫素電極發生剝離的情形。Therefore, the present invention provides a transflective pixel structure and a display panel having the transflective pixel structure to solve the conventional alignment process of the transflective pixel structure. The case where the reflective pixel electrode is peeled off.
本發明提供一種半穿透半反射式畫素結構,其包括基板、主動元件、覆蓋層、反射畫素電極、透明畫素電極、至少一透明圖案以及配向層。基板具有反射區以及穿透區。主動元件位於基板上。覆蓋層位於基板上且覆蓋主動元件,其中覆蓋層在反射區具有多個凸起結構。反射畫素電極配置於反射區的覆蓋層上並且與主動元件電性連接。透明畫素電極位於穿透區的覆蓋層上並且與主動元件電性連接。透明圖案覆蓋反射畫素電極的至少一角落。配向層覆蓋反射畫素電極、透明畫素電極以及透明圖案,其中配向層具有一配向方向,反射畫素電極的對角線順著配向方向,且至少一透明圖案是位於對角線上的角落處。The present invention provides a transflective pixel structure comprising a substrate, an active device, a cover layer, a reflective pixel electrode, a transparent pixel electrode, at least one transparent pattern, and an alignment layer. The substrate has a reflective area and a transmissive area. The active component is located on the substrate. The cover layer is on the substrate and covers the active component, wherein the cover layer has a plurality of raised structures in the reflective region. The reflective pixel electrode is disposed on the cover layer of the reflective area and electrically connected to the active component. The transparent pixel electrode is located on the cover layer of the penetration region and is electrically connected to the active device. The transparent pattern covers at least one corner of the reflective pixel electrode. The alignment layer covers the reflective pixel electrode, the transparent pixel electrode, and the transparent pattern, wherein the alignment layer has an alignment direction, the diagonal of the reflective pixel electrode follows the alignment direction, and the at least one transparent pattern is located at a corner on the diagonal line .
本發明提出一種顯示面板,其包括一畫素陣列基板,此畫素陣列基板具有多個畫素結構,其中每一畫素結構為如上所述之半穿透半反射式畫素結構;對向基板,位於畫素陣列基板的對向;以及液晶層,位於畫素陣列基板以及該對向基板之間。The invention provides a display panel comprising a pixel array substrate, the pixel array substrate having a plurality of pixel structures, wherein each pixel structure is a transflective pixel structure as described above; a substrate, located opposite the pixel array substrate; and a liquid crystal layer between the pixel array substrate and the opposite substrate.
由於本發明在反射畫素電極的至少一角落設置有透明圖案,且此透明圖案是位於反射畫素電極之對角線上的角落處,其中所述之對角線是順著配向層之配向方向。因此,當於此於半穿透半反射式畫素結構進行配向處理時,可避免於反射畫素電極之邊緣產生剝離的情形。Since the present invention is provided with a transparent pattern at at least one corner of the reflective pixel electrode, and the transparent pattern is located at a corner of the diagonal of the reflective pixel electrode, wherein the diagonal line is along the alignment direction of the alignment layer . Therefore, when the alignment treatment is performed on the transflective pixel structure, peeling of the edge of the reflective pixel electrode can be avoided.
為讓本發明之上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。The above described features and advantages of the present invention will be more apparent from the following description.
圖1是根據本發明一實施例之半穿透半反射式畫素結構的上視示意圖,圖2視圖1沿著I-I’的剖面是示意圖。請同時參照圖1以及圖2,本實施例之半穿透半反射式畫素結構包括基板100、主動元件120、覆蓋層104、反射畫素電極106、透明畫素電極108、至少一透明圖案109以及配向層110。BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a top plan view showing a transflective pixel structure according to an embodiment of the present invention, and Fig. 2 is a schematic view taken along line I-I'. Referring to FIG. 1 and FIG. 2 simultaneously, the transflective pixel structure of the embodiment includes a substrate 100, an active device 120, a cover layer 104, a reflective pixel electrode 106, a transparent pixel electrode 108, and at least one transparent pattern. 109 and an alignment layer 110.
基板100具有反射區R以及穿透區T。基板100可為玻璃基板、塑膠基板、矽基板或是其他適用的基板。基板上100包括設置有掃描線SL、資料線DL以及主動元件120。在本實施例中,主動元件120與掃描線SL以及資料線DL電性連接。主動元件120例如是薄膜電晶體,其包括閘極、源極以及汲極。一般來說,由於主動元件120為遮光元件,因此主動元件120較佳的是設置於反射區R中。然而本發明不限制主動元件所設置的位置。在其他的實施例中,主動元件120也可以根據設計需要而設置於穿透區T中,或是同時跨越反射區R及穿透區T。The substrate 100 has a reflective area R and a transmissive area T. The substrate 100 can be a glass substrate, a plastic substrate, a germanium substrate, or other suitable substrate. The substrate 100 includes a scan line SL, a data line DL, and an active device 120. In this embodiment, the active device 120 is electrically connected to the scan line SL and the data line DL. The active component 120 is, for example, a thin film transistor that includes a gate, a source, and a drain. In general, since the active component 120 is a light blocking component, the active component 120 is preferably disposed in the reflective region R. However, the invention does not limit the position at which the active components are placed. In other embodiments, the active component 120 may also be disposed in the penetration region T according to design requirements, or may simultaneously span the reflective region R and the penetration region T.
此外,由於主動元件120的製造程序的緣故,在完成主動元件120的製造程序之後,一般會於基板100之表面覆蓋有絕緣層102。此絕緣層102例如是閘絕緣層以及保護層之疊層。然本發明不限於此,在其他的實施例中,基板100上也可以不覆蓋有絕緣層102,或者是絕緣層102本身為單一膜層,或者是絕緣層102為三層或以上的膜層。In addition, due to the manufacturing process of the active device 120, the surface of the substrate 100 is generally covered with an insulating layer 102 after the manufacturing process of the active device 120 is completed. This insulating layer 102 is, for example, a laminate of a gate insulating layer and a protective layer. However, the present invention is not limited thereto. In other embodiments, the substrate 100 may not be covered with the insulating layer 102, or the insulating layer 102 itself may be a single film layer, or the insulating layer 102 may be a layer of three or more layers. .
覆蓋層104位於基板100上並且覆蓋主動元件120、掃描線SL、資料線DL以及絕緣層102。換言之,覆蓋層104是覆蓋整個基板100。覆蓋層104之材質較佳的使選用具有感光性質的有機材料。特別是,覆蓋層104在反射區R具有多個凸起結構106。在反射區R設置凸起結構106的目的是為了增加畫素結構之反射區R的反射率。而凸起結構106可以利用微影的方式來形成。特別值得一提的是,本發明不限制覆蓋層104之材質、凸起結構106的形成方式、形狀、密度以及位置,本實施例之圖式所繪示的凸起結構106只是為了清楚說明。The cover layer 104 is located on the substrate 100 and covers the active device 120, the scan line SL, the data line DL, and the insulating layer 102. In other words, the cover layer 104 covers the entire substrate 100. The material of the cover layer 104 is preferably selected from organic materials having photosensitive properties. In particular, the cover layer 104 has a plurality of raised structures 106 in the reflective region R. The purpose of providing the raised structure 106 in the reflective region R is to increase the reflectivity of the reflective region R of the pixel structure. The raised structure 106 can be formed by means of lithography. It is particularly worth mentioning that the present invention does not limit the material of the cover layer 104, the formation manner, shape, density and position of the raised structure 106. The raised structure 106 illustrated in the drawings of the present embodiment is for clarity only.
另外,反射畫素電極106是配置於反射區R的覆蓋層104上,因此反射畫素電極106會覆蓋凸起結構104a。另外,反射畫素電極106與主動元件120電性連接。在本實施例中,反射畫素電極106是透過接觸窗開口H而與主動元件120之一端(例如是薄膜電晶體之汲極)電性連接。反射畫素電極106之材質例如是金屬,較佳的是選用具有高反射率以及高導電性的金屬材料。值得一提的是,在本實施例中,反射畫素電極106在反射區R所佔的面積大於覆蓋層104之凸起結構104a在反射區R所佔的面積。In addition, the reflective pixel electrode 106 is disposed on the cover layer 104 of the reflective region R, so that the reflective pixel electrode 106 covers the raised structure 104a. In addition, the reflective pixel electrode 106 is electrically connected to the active device 120. In the present embodiment, the reflective pixel electrode 106 is electrically connected to one end of the active device 120 (for example, the drain of the thin film transistor) through the contact opening H. The material of the reflective pixel electrode 106 is, for example, a metal, and a metal material having high reflectance and high conductivity is preferably used. It is worth mentioning that in the present embodiment, the area occupied by the reflective pixel electrode 106 in the reflective region R is larger than the area occupied by the convex structure 104a of the cover layer 104 in the reflective region R.
透明畫素電極108是位於穿透區T的覆蓋層104上。特別是,透明畫素電極108與反射畫素電極106兩者是連接在一起。因反射畫素電極106與主動元件120電性連接,且反射畫素電極106又與透明畫素電極108連接在一起,因此透明畫素電極108亦會與主動元件120電性連接。如此一來,當於操作此畫素結構時,透明畫素電極108與反射畫素電極106是處於共電位的狀態。另外,透明畫素電極108之材質例如是透明導電材料,例如是金屬氧化物,如銦錫氧化物、銦鋅氧化物或是其他金屬氧化物。The transparent pixel electrode 108 is on the cover layer 104 of the penetration region T. In particular, both the transparent pixel electrode 108 and the reflective pixel electrode 106 are connected together. Since the reflective pixel electrode 106 is electrically connected to the active device 120, and the reflective pixel electrode 106 is connected to the transparent pixel electrode 108, the transparent pixel electrode 108 is also electrically connected to the active device 120. As a result, when the pixel structure is operated, the transparent pixel electrode 108 and the reflective pixel electrode 106 are in a common potential state. Further, the material of the transparent pixel electrode 108 is, for example, a transparent conductive material such as a metal oxide such as indium tin oxide, indium zinc oxide or other metal oxide.
另外,透明圖案109是覆蓋在反射畫素電極106的至少一角落C。在圖1之實施例中,透明圖案109是設置於反射畫素電極106的四個角落C。在此,透明圖案109是直接貼附在反射畫素電極106的至少一角落C,且透明圖案109可以是在製作透明畫素電極108時一併製作出來。換言之,透明圖案109與透明畫素電極108可以利用同一道光罩定義出來。然,本發明不限於此,在其他的實施例中,透明圖案109與透明畫素電極108也可以分別製作出來。因此透明圖案109之材質可以與透明畫素電極108之材質相同或是不相同。透明圖案109之材質例如是透明導電材料,其例如是金屬氧化物,如銦錫氧化物、銦鋅氧化物或是其他金屬氧化物。另外,本實施例之透明圖案109是塊狀圖案,其可以是方形、矩形、圓形或是多邊形。此外,本發明之透明圖案109可以跨出反射畫素電極106之邊緣約0至30微米,且透明圖案109與反射畫素電極106重疊寬度約為0至30微米。由於本實施例之透明圖案109會跨出反射畫素電極106之邊緣,因此透明圖案109跨出反射畫素電極106之邊緣的距離不為0。In addition, the transparent pattern 109 is covered at at least one corner C of the reflective pixel electrode 106. In the embodiment of FIG. 1, the transparent pattern 109 is disposed at four corners C of the reflective pixel electrode 106. Here, the transparent pattern 109 is directly attached to at least one corner C of the reflective pixel electrode 106, and the transparent pattern 109 may be fabricated together when the transparent pixel electrode 108 is formed. In other words, the transparent pattern 109 and the transparent pixel electrode 108 can be defined by the same mask. However, the present invention is not limited thereto, and in other embodiments, the transparent pattern 109 and the transparent pixel electrode 108 may be separately fabricated. Therefore, the material of the transparent pattern 109 may be the same as or different from the material of the transparent pixel electrode 108. The material of the transparent pattern 109 is, for example, a transparent conductive material such as a metal oxide such as indium tin oxide, indium zinc oxide or other metal oxide. In addition, the transparent pattern 109 of the present embodiment is a block pattern, which may be square, rectangular, circular or polygonal. Further, the transparent pattern 109 of the present invention may extend about 0 to 30 microns across the edge of the reflective pixel electrode 106, and the transparent pattern 109 overlaps the reflective pixel electrode 106 by a width of about 0 to 30 microns. Since the transparent pattern 109 of the present embodiment will straddle the edge of the reflective pixel electrode 106, the distance of the transparent pattern 109 from the edge of the reflective pixel electrode 106 is not zero.
配向層110覆蓋反射畫素電極106、透明畫素電極108以及透明圖案109。換言之,配向層110覆蓋整個基板100上的膜層。特別是,配向層110具有一配向方向D,而且反射畫素電極106的一對角線L順著配向方向D。較佳的是,反射畫素電極106的對角線L與配向方向D平行,而且上述透明圖案109是位於反射畫素電極106的對角線L上的角落處C。換言之,透明圖案109至少位於反射畫素電極106的對角線L上的角落處C。因此,在本發明之另一實施例中,在反射畫素電極106的另外兩個角落(沒有落在對角線L上的角落)則可不設置有透明圖案109,如圖3所示。The alignment layer 110 covers the reflective pixel electrode 106, the transparent pixel electrode 108, and the transparent pattern 109. In other words, the alignment layer 110 covers the entire film layer on the substrate 100. In particular, the alignment layer 110 has an alignment direction D, and a pair of angular lines L of the reflective pixel electrodes 106 follow the alignment direction D. Preferably, the diagonal L of the reflective pixel electrode 106 is parallel to the alignment direction D, and the transparent pattern 109 is located at a corner C on the diagonal L of the reflective pixel electrode 106. In other words, the transparent pattern 109 is located at least at a corner C on the diagonal L of the reflective pixel electrode 106. Therefore, in another embodiment of the present invention, the transparent pattern 109 may not be provided at the other two corners of the reflective pixel electrode 106 (the corners not falling on the diagonal line L), as shown in FIG.
由於本發明在反射畫素電極106的對角線L上的角落處C覆蓋有透明圖案109,因此當後續於此於半穿透半反射式畫素結構進行滾輪摩擦配向處理時,可避免反射畫素電極108產生剝離的情形。Since the present invention covers the corner C on the diagonal L of the reflective pixel electrode 106 with the transparent pattern 109, the reflection can be avoided when the roller rubbing alignment process is subsequently performed on the transflective pixel structure. The pixel electrode 108 is peeled off.
本發明除了如圖1所繪示之實施例,即在反射畫素電極106的角落C設置透明圖案109之外,還可以在反射畫素電極106的局部邊緣設置透明圖案109a,如圖4所示。In addition to the embodiment shown in FIG. 1, in which a transparent pattern 109 is disposed at a corner C of the reflective pixel electrode 106, a transparent pattern 109a may be disposed on a partial edge of the reflective pixel electrode 106, as shown in FIG. Show.
另外,圖1、圖3以及圖4所示之畫素結構中之透明圖案109是非連續的塊狀圖案。然,本發明不限於此,在其他的實施例中,透明圖案109也可以是連續的條狀圖案,如下所述。In addition, the transparent pattern 109 in the pixel structure shown in FIGS. 1, 3, and 4 is a discontinuous block pattern. However, the present invention is not limited thereto, and in other embodiments, the transparent pattern 109 may also be a continuous strip pattern as described below.
請先參照圖5,圖5之畫素結構與圖1所示之畫素結構相似,不同之處在於透明圖案109是條狀圖案,其分別覆蓋於反射畫素電極106的相對向的兩邊緣處。類似地,在此實施例中,透明圖案109是在製作透明畫素電極108時一併製作出來。然,本發明不限於此,在其他的實施例中,透明圖案109與透明畫素電極108也可以分別製作出來。因此,透明畫素電極108與透明圖案109之材質可以相同或不相同。Referring first to FIG. 5, the pixel structure of FIG. 5 is similar to the pixel structure shown in FIG. 1, except that the transparent pattern 109 is a strip pattern covering the opposite edges of the reflective pixel electrode 106, respectively. At the office. Similarly, in this embodiment, the transparent pattern 109 is produced together when the transparent pixel electrode 108 is fabricated. However, the present invention is not limited thereto, and in other embodiments, the transparent pattern 109 and the transparent pixel electrode 108 may be separately fabricated. Therefore, the materials of the transparent pixel electrode 108 and the transparent pattern 109 may be the same or different.
另外,請參照圖6,圖6畫素結構與圖5所示之畫素結構相似,不同之處在於,條狀透明圖案109是覆蓋於反射畫素電極106的另外兩個相對向的邊緣處。In addition, referring to FIG. 6, the pixel structure of FIG. 6 is similar to the pixel structure shown in FIG. 5, except that the strip transparent pattern 109 covers the other two opposite edges of the reflective pixel electrode 106. .
在圖5與圖6之實施例中,透明圖案109覆蓋了反射畫素電極106的所有角落處以及反射畫素電極109的相對向的兩邊緣。然而,在其他的實施例中,透明圖案109亦可以僅覆蓋反射畫素電極106的其中一邊緣,如圖7所示。在圖7的畫素結構中,透明圖案109僅覆蓋反射畫素電極106的其中一邊緣,且此邊緣為後續進行配向處理時,配向滾輪最先接觸到所述反射畫素電極106的那一個邊緣。In the embodiment of FIGS. 5 and 6, the transparent pattern 109 covers all corners of the reflective pixel electrode 106 and the opposite edges of the reflective pixel electrode 109. However, in other embodiments, the transparent pattern 109 may also cover only one of the edges of the reflective pixel electrode 106, as shown in FIG. In the pixel structure of FIG. 7, the transparent pattern 109 covers only one of the edges of the reflective pixel electrode 106, and the edge is the one that the alignment roller first contacts the reflective pixel electrode 106 when the alignment process is subsequently performed. edge.
在上述圖5至圖7的實施例中,透明圖案109覆蓋反射畫素電極106之邊緣之外,也覆蓋了位於該邊緣兩端的角落處,而且透明圖案109跨出反射畫素電極106之邊緣,所跨出的距離可為0~30微米,而透明圖案109與反射畫素電極106重疊寬度可為0~30微米。類似地,因圖5至圖7之實施例之透明圖案109會跨出反射畫素電極106之邊緣,因此透明圖案109跨出反射畫素電極106之邊緣的距離是不為0。In the above-described embodiments of FIGS. 5 to 7, the transparent pattern 109 covers the edges of the reflective pixel electrode 106, and also covers the corners at both ends of the edge, and the transparent pattern 109 extends over the edge of the reflective pixel electrode 106. The distance spanned may be 0 to 30 micrometers, and the width of the transparent pattern 109 and the reflective pixel electrode 106 may be 0 to 30 micrometers. Similarly, since the transparent pattern 109 of the embodiment of FIGS. 5 to 7 will straddle the edge of the reflective pixel electrode 106, the distance of the transparent pattern 109 from the edge of the reflective pixel electrode 106 is not zero.
根據其他的實施例,透明圖案109可以不完全跨出反射畫素電極106之角落,如圖8之實施例。換言之,透明圖案109跨出反射畫素電極106之E1邊緣,但沒有跨出反射畫素電極106之另一邊緣E2。在圖9之實施例中,透明圖案109跨出反射畫素電極106之邊緣E2,但沒有跨出反射畫素電極106之另一邊緣E1。上述圖8與圖9實施例中,透明圖案109跨出反射畫素電極106之跨出的距離可為0至30微米。同樣地,透明圖案109與反射畫素電極106重疊寬度可為0至30微米。According to other embodiments, the transparent pattern 109 may not completely extend beyond the corners of the reflective pixel electrode 106, as in the embodiment of FIG. In other words, the transparent pattern 109 spans the E1 edge of the reflective pixel electrode 106 but does not span the other edge E2 of the reflective pixel electrode 106. In the embodiment of FIG. 9, the transparent pattern 109 spans the edge E2 of the reflective pixel electrode 106 but does not span the other edge E1 of the reflective pixel electrode 106. In the above embodiments of FIG. 8 and FIG. 9, the distance that the transparent pattern 109 spans the reflective pixel electrode 106 may be 0 to 30 micrometers. Likewise, the transparent pattern 109 may overlap the reflective pixel electrode 106 by a width of 0 to 30 microns.
類似地,圖8與圖9之實施例之透明圖案109亦可僅覆蓋反射畫素電極106的其中一邊緣(例如僅跨出其中一個邊緣E1或其中的一個邊緣E2),且此邊緣為後續進行配向處理時,配向滾輪最先接觸到的反射畫素電極106的邊緣。Similarly, the transparent pattern 109 of the embodiment of FIG. 8 and FIG. 9 may also cover only one of the edges of the reflective pixel electrode 106 (eg, only one of the edges E1 or one of the edges E2), and this edge is followed. When the alignment process is performed, the alignment roller first contacts the edge of the reflective pixel electrode 106.
圖10為根據本發明一實施例之顯示面板的剖面示意圖。請參照圖10,顯示面板包括畫素陣列基板202、對向基板204以及液晶層206。此畫素陣列基板202具有多個畫素結構,且每一畫素結構可以是圖1、圖3至圖8任一圖所示之半穿透半反射式畫素結構。對向基板204位於畫素陣列基板202的對向,對向基板204可為空白基板、或是設置有電極膜之基板。液晶層206位於畫素陣列基板202以及對向基板204之間。另外,此顯示面板更可包括彩色濾光層,其可設置於畫素陣列基板202或對向基板204上。若彩色濾光層是設置於畫素陣列基板202,那麼畫素陣列基板202又可稱為彩色濾光層於陣列上之基板(color filter on array,COA)。FIG. 10 is a cross-sectional view of a display panel in accordance with an embodiment of the present invention. Referring to FIG. 10 , the display panel includes a pixel array substrate 202 , a counter substrate 204 , and a liquid crystal layer 206 . The pixel array substrate 202 has a plurality of pixel structures, and each of the pixel structures may be a transflective pixel structure as shown in any of FIGS. 1 and 3 to 8. The opposite substrate 204 is located opposite to the pixel array substrate 202, and the opposite substrate 204 may be a blank substrate or a substrate provided with an electrode film. The liquid crystal layer 206 is located between the pixel array substrate 202 and the opposite substrate 204. In addition, the display panel may further include a color filter layer, which may be disposed on the pixel array substrate 202 or the opposite substrate 204. If the color filter layer is disposed on the pixel array substrate 202, the pixel array substrate 202 may be referred to as a color filter on array (COA).
綜合以上所述,由於本發明在反射畫素電極的至少一角落設置有透明圖案,且此透明圖案是位於反射畫素電極之對角線上的角落處,其中所述之對角線是順著配向層之配向方向。因此,當於此於半穿透半反射式畫素結構進行配向處理時,可避免於反射畫素電極之邊緣產生剝離的情形。In summary, since the present invention is provided with a transparent pattern at at least one corner of the reflective pixel electrode, and the transparent pattern is located at a corner of the diagonal of the reflective pixel electrode, wherein the diagonal line is followed The alignment direction of the alignment layer. Therefore, when the alignment treatment is performed on the transflective pixel structure, peeling of the edge of the reflective pixel electrode can be avoided.
另外,本發明之透明圖案並非覆蓋反射畫素電極的整個邊緣,因此可以減少因透明圖案的存在而降低反射畫素電極之反射率的情形。Further, since the transparent pattern of the present invention does not cover the entire edge of the reflective pixel electrode, it is possible to reduce the situation in which the reflectance of the reflective pixel electrode is lowered by the presence of the transparent pattern.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,故本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.
100...基板100. . . Substrate
102...絕緣層102. . . Insulation
104...覆蓋層104. . . Cover layer
104a...凸起圖案104a. . . Raised pattern
106...反射畫素電極106. . . Reflective pixel electrode
108...透明畫素電極108. . . Transparent pixel electrode
109,109a...透明圖案109,109a. . . Transparent pattern
110...配向層110. . . Alignment layer
120...主動元件120. . . Active component
202...畫素陣列基板202. . . Pixel array substrate
204...對向基板204. . . Counter substrate
206...液晶層206. . . Liquid crystal layer
R...反射區R. . . Reflection zone
T...穿透區T. . . Penetration zone
SL...掃描線SL. . . Scanning line
DL...資料線DL. . . Data line
H...接觸窗開口H. . . Contact window opening
D...配向方向D. . . Orientation direction
L...對角線L. . . diagonal
C...角落C. . . corner
E1,E2...邊緣E1, E2. . . edge
圖1是根據本發明一實施例之半穿透半反射式畫素結構的上視示意圖。1 is a top plan view of a transflective pixel structure in accordance with an embodiment of the present invention.
圖2視圖1沿著I-I’的剖面示意圖。Figure 2 is a schematic cross-sectional view of the view 1 taken along line I-I'.
圖3至圖9為根據本發明多個實施例之半穿透半反射式畫素結構的上視示意圖。3 through 9 are top plan views of a transflective pixel structure in accordance with various embodiments of the present invention.
圖10為根據本發明一實施例之顯示面板的剖面示意圖。FIG. 10 is a cross-sectional view of a display panel in accordance with an embodiment of the present invention.
106...反射畫素電極106. . . Reflective pixel electrode
108...透明畫素電極108. . . Transparent pixel electrode
109...透明圖案109. . . Transparent pattern
110...配向層110. . . Alignment layer
120...主動元件120. . . Active component
R...反射區R. . . Reflection zone
T...穿透區T. . . Penetration zone
SL...掃描線SL. . . Scanning line
DL...資料線DL. . . Data line
H...接觸窗開口H. . . Contact window opening
D...配向方向D. . . Orientation direction
L...對角線L. . . diagonal
C...角落C. . . corner
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JPH11281992A (en) * | 1998-03-31 | 1999-10-15 | Sharp Corp | Liquid crystal display and its production |
US6380995B1 (en) * | 1998-08-06 | 2002-04-30 | Lg.Philips Lcd Co., Ltd. | Transflective liquid crystal display device with asymmetry reflective electrode having a transparent portion facing a main viewing angle |
TW561299B (en) * | 2001-08-06 | 2003-11-11 | Nec Lcd Technologies Ltd | Transflective type LCD and method for manufacturing the same |
TW200834152A (en) * | 2007-02-02 | 2008-08-16 | Chi Mei Optoelectronics Corp | Transflective liquid crystal display panel and fabricating method thereof |
TW200835971A (en) * | 2007-02-26 | 2008-09-01 | Chi Mei Optoelectronics Corp | Transflective liquid crystal display |
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JPH11281992A (en) * | 1998-03-31 | 1999-10-15 | Sharp Corp | Liquid crystal display and its production |
US6380995B1 (en) * | 1998-08-06 | 2002-04-30 | Lg.Philips Lcd Co., Ltd. | Transflective liquid crystal display device with asymmetry reflective electrode having a transparent portion facing a main viewing angle |
TW561299B (en) * | 2001-08-06 | 2003-11-11 | Nec Lcd Technologies Ltd | Transflective type LCD and method for manufacturing the same |
TW200834152A (en) * | 2007-02-02 | 2008-08-16 | Chi Mei Optoelectronics Corp | Transflective liquid crystal display panel and fabricating method thereof |
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